A transistor laser and a method for manufacturing the same

Abstract

The present invention provides a transistor laser and a preparation method thereof, wherein the transistor laser comprises: a substrate; a collector layer material layer, a base material layer, a base high Al component material layer, a quantum well material layer, an emitter high Al component material layer, and an emitter material layer are sequentially grown on the substrate; the emitter material layer, the emitter high Al component material layer, the quantum well material layer, and the base high Al component material layer are etched to form an emitter waveguide; a base electrode is arranged on the base material layer and is not connected to the emitter waveguide; an emitter electrode is arranged on the emitter material layer; a collector electrode is arranged on the lower surface of the substrate; wherein at least one of the base high Al component material layer and the emitter high Al component material layer is oxidized in an area close to the two side walls of the emitter waveguide. The transistor laser can effectively reduce the adverse effects of the non-radiative recombination center on the side wall of the emitter waveguide, thereby significantly improving the performance of the transistor laser.

Description

Technical Field

[0001] The present disclosure relates to the technical field of optoelectronic devices, and in particular to a transistor laser and a method for preparing the same. Background Art

[0002] A transistor laser is a transistor that has both the current control function of a transistor and the light emission function of a laser. A transistor laser can simultaneously obtain an electrical signal output (collector current) and an optical signal output using an electrical signal input (such as base current). Based on this functional characteristic, it has important potential application value in the fields of optical communication and optical signal processing.

[0003] In the deep ridge transistor laser structure, the etching of the emitter ridge waveguide passes through the quantum well material and stops at the base material below it. The quantum well is exposed on the sidewall of the base waveguide, and there are a large number of defects on its surface, which are efficient non-radiative recombination centers. A large number of injected carriers are consumed, which will significantly deteriorate the optoelectronic performance of the device. Experiments show that even if chemical passivation measures have been taken in device manufacturing, the impact of quantum well surface defects is still very significant. Summary of the invention

[0004] In view of the above problems, the present invention provides a transistor laser and a method for manufacturing the same to solve the above technical problems.

[0005] One aspect of the present disclosure provides a transistor laser, comprising: a substrate, a collector layer material layer, a base material layer, a base high Al component material layer, a quantum well material layer, an emitter high Al component material layer, an emitter material layer, a base electrode, an emitter electrode, and a collector electrode; the collector layer material layer, the base material layer, the base high Al component material layer, the quantum well material layer, the emitter high Al component material layer, and the emitter material layer are sequentially grown on the substrate; the emitter material layer, the emitter high Al component material layer, the quantum well material layer, and the base high Al component material layer are etched to form an emitter waveguide; the base electrode is arranged on the base material layer and is not connected to the emitter waveguide; the emitter electrode is arranged on the emitter material layer; the collector electrode is arranged on the lower surface of the substrate; wherein at least one of the base high Al component material layer and the emitter high Al component material layer is oxidized in an area close to the two side walls of the emitter waveguide.

[0006] According to an embodiment of the present disclosure, the Al element content of at least one of the base high Al component material layer and the emitter high Al component material layer is higher than that of the other material layers.

[0007] According to an embodiment of the present disclosure, the non-oxidized region of the base high Al component material layer and / or the emitter high Al component material layer constitutes a current channel of the transistor laser.

[0008] According to an embodiment of the present disclosure, the oxidized regions of the base high Al component material layer and / or the emitter high Al component material layer are not conductive.

[0009] According to an embodiment of the present disclosure, the material of the substrate is InP, the material of the collector layer material layer is InGaAsP or In(1-xy)GaxAlyAs, the material of the base material layer is InGaAsP or In(1-xy)GaxAlyAs, the material of the base high Al component material layer is In(1-xy)GaxAlyAs, the material of the quantum well material layer is InGaAsP or In(1-xy)GaxAlyAs, the material of the emitter high Al component material layer is In(1-xy)GaxAlyAs, and the material of the emitter material layer is InP.

[0010] Another aspect of the present disclosure provides a method for preparing a transistor laser, the method comprising: sequentially growing a collector layer material layer, a base material layer, a base high Al component material layer, a quantum well material layer, an emitter high Al component material layer, and an emitter material layer on a substrate; etching the emitter material layer, the emitter high Al component material layer, the quantum well material layer, and the base high Al component material layer to form an emitter waveguide; laterally oxidizing an area of ​​at least one of the base high Al component material layer and the emitter high Al component material layer close to the two side walls of the emitter waveguide; making a base electrode on the base material layer, the base electrode being not connected to the emitter waveguide, making an emitter electrode on the emitter material layer, and making a collector electrode on the lower surface of the substrate to obtain a transistor light emitter.

[0011] At least one of the above technical solutions adopted in the embodiments of the present disclosure can achieve the following beneficial effects:

[0012] The present disclosure provides a transistor laser, which forms a current channel by selectively oxidizing Al-containing materials on both sides of an emitter waveguide, thereby limiting the flow of carriers to the central area of ​​the emitter waveguide, and can effectively reduce the adverse effects of non-radiative recombination centers on the side walls of the emitter waveguide, thereby significantly improving the performance of the transistor laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] For a more complete understanding of the present disclosure and its advantages, reference will now be made to the following description taken in conjunction with the accompanying drawings, in which:

[0014] Figure 1 A schematic diagram of a half-cross-sectional structure of a transistor laser provided by an embodiment of the present disclosure is shown;

[0015] Figure 2A schematic diagram of the cross-sectional structure of a transistor laser provided by an embodiment of the present disclosure is shown;

[0016] Figure 3 A flow chart of a method for preparing a transistor laser provided in an embodiment of the present disclosure is schematically shown.

[0017] Description of reference numerals:

[0018] Substrate-10; collector layer material layer-20; base material layer-30; base high Al component material layer-40; quantum well material layer-50; emitter high Al component material layer-60; emitter material layer-70; emitter waveguide-90; oxidation material region-80. DETAILED DESCRIPTION

[0019] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the present disclosure. In the following detailed description, for ease of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present disclosure. However, it is apparent that one or more embodiments may also be implemented without these specific details. In addition, in the following description, descriptions of known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present disclosure.

[0020] The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. The terms "comprise", "include", etc. used herein indicate the existence of the features, steps, operations and / or components, but do not exclude the existence or addition of one or more other features, steps, operations or components.

[0021] All terms (including technical and scientific terms) used herein have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification, and should not be interpreted in an idealized or overly rigid manner.

[0022] A crystal optical laser provided by an embodiment of the present disclosure includes a substrate 10, a collector layer material layer 20, a base material layer 30, a base high Al component material layer 40, a quantum well material layer 50, an emitter high Al component material layer 60, an emitter material layer 70, a base electrode, an emitter electrode, and a collector. The collector layer material layer 20, the base material layer 30, the base high Al component material layer 40, the quantum well material layer 50, the emitter high Al component material layer 60, and the emitter material layer 70 are grown in sequence on the substrate 10; the emitter material layer 70, the emitter high Al component material layer 60, the quantum well material layer 50 and the base high Al component material layer 40 are etched to form an emitter waveguide 90; the base electrode is arranged on the base material layer 30 and is not connected to the emitter waveguide 90; the emitter electrode is arranged on the emitter material layer 70; the collector is arranged on the lower surface of the substrate 10; wherein, at least one layer of the base high Al component material layer 40 and the emitter high Al component material layer 60 is oxidized in the area close to the two side walls of the emitter waveguide 90.

[0023] In this embodiment, the Al content of at least one of the base high Al component material layer 40 and the emitter high Al component material layer 60 is higher than that of other material layers, and is more easily oxidized than other material layers. When the Al content of the base high Al component material layer 40 is high, only the areas on both sides of the base high Al component material layer 40 close to the side walls of the emitter waveguide 90 can be oxidized; when the Al content of the emitter high Al component material layer 60 is high, only the areas on both sides of the emitter high Al component material layer 60 close to the side walls of the emitter waveguide 90 can be oxidized; when the Al content of both the base high Al component material layer 40 and the emitter high Al component material layer 60 is high, the areas on both sides of the base high Al component material layer 40 and the emitter high Al component material layer 60 can be oxidized simultaneously.

[0024] The oxidized regions of the base high Al component material layer 40 and / or the emitter high Al component material layer 60 are non-conductive. By oxidizing the base high Al component material layer 40 and / or the emitter high Al component material layer 60, a current channel can be formed in the emitter waveguide 90 in the region corresponding to the non-oxidized region of the oxidized base high Al component material layer 40 and / or the emitter high Al component material layer 60, so that carriers can only flow inside the current channel, away from the non-radiative recombination defects of the side wall of the emitter waveguide 90, thereby reducing the adverse effects of defects on device performance.

[0025] Figure 1 , 2 A half-section structural diagram and an overall schematic diagram of a transistor laser provided by one of the embodiments of the present disclosure are schematically shown to facilitate the description of the structural composition.

[0026] like Figure 1 , 2As shown, in one embodiment of the present disclosure, the areas of the base high Al component material layer 40 and the emitter high Al component material layer 60 near the two side walls of the emitter waveguide 90 are oxidized, and an oxidized material region 80 with a width of Wr is formed on both sides of the base high Al component material layer 40 and the emitter high Al component material layer 60. The oxidized material region 80 is non-conductive, thereby forming a current channel with a width of 2Wa located inside the emitter waveguide 90. Carriers can only flow inside the current channel, away from the non-radiative recombination defects on the side walls of the emitter waveguide 90, thereby reducing the adverse effects of defects on device performance.

[0027] When the Al content in the base high Al content material layer 4040 and the emitter high Al content material layer 60 is higher than that in other Al-containing material layers, the oxide material with a width of Wr exists in both material layers. When only one of the base high Al content material layer 40 and the emitter high Al content material layer 60 has a higher Al content than that in other material layers, the oxide material with a width of Wr exists only in the material layer with a higher Al content.

[0028] In one of the embodiments of the present disclosure, the material of the substrate 10 may be InP, the material of the collector layer material layer 20 may be InGaAsP or In(1-xy)GaxAlyAs, the material of the base material layer 30 may be InGaAsP or In(1-xy)GaxAlyAs, the material of the base high Al component material layer 40 may be In(1-xy)GaxAlyAs, the material of the quantum well material layer 50 may be InGaAsP or In(1-xy)GaxAlyAs, the material of the emitter high Al component material layer 60 may be In(1-xy)GaxAlyAs, and the material of the emitter material layer 70 may be InP.

[0029] Figure 3 A flow chart of a method for preparing a transistor laser provided in an embodiment of the present disclosure is schematically shown.

[0030] like Figure 3 As shown, an embodiment of the present disclosure provides a method for preparing a transistor laser, and the method includes operations S301 to S304.

[0031] In operation S301 , a collector material layer 20 , a base material layer 30 , a base high Al component material layer 40 , a quantum well material layer 50 , an emitter high Al component material layer 60 , and an emitter material layer 70 are sequentially grown on a substrate 10 .

[0032] In operation S302 , the emitter material layer 70 , the emitter high Al component material layer 60 , the quantum well material layer 50 , and the base high Al component material layer 40 are etched to form an emitter waveguide 90 .

[0033] In operation S303 , at least one of the base high Al component material layer 40 and the emitter high Al component material layer 60 is laterally oxidized in areas close to both side walls of the emitter waveguide 90 .

[0034] In operation S304, a base electrode is fabricated on the base material layer 30, the base electrode is not connected to the emitter waveguide 90, an emitter electrode is fabricated on the emitter material layer 70, and a collector electrode is fabricated on the lower surface of the substrate 10, thereby obtaining a transistor light emitter.

[0035] See also Figure 1 , 2 Taking the InP-based material system as an example, the specific implementation operations of operations S301 to S304 of a transistor laser preparation method provided by an embodiment of the present disclosure are as follows.

[0036] In operation S301, a collector layer material layer 20, which is an InGaAsP or In(1-xy)GaxAlyAs material, a base material layer 30, which is an InGaAsP or In(1-xy)GaxAlyAs material, a base high Al component material layer 40, which is an In(1-xy)GaxAlyAs material, a quantum well material layer 50, which is an InGaAsP or In(1-xy)GaxAlyAs material, an emitter high Al component material layer 60, which is an In(1-xy)GaxAlyAs material, and an InP emitter material layer 70 are sequentially grown on an InP substrate 10. The Al component y in at least one of the base high Al component material layer 40 and the emitter high Al component material layer 60 is greater than the Al component in the other Al-containing material layers.

[0037] In operation S302 , the emitter material layer 70 , the emitter high Al component material layer 60 , the quantum well material layer 50 and the base high Al component material layer 40 are sequentially etched to form an emitter waveguide 90 , and the material etching stops on or in the base material 30 .

[0038] In operation S303, the high Al component material layers 40 and 60 are laterally oxidized. Since the Al content y in the high Al component material layer is higher than that in other material layers, the oxidation rate of the material is greater than that of other material layers. The oxidation of the material starts from the side wall of the ridge waveguide and goes deep into the interior of the ridge waveguide, and finally forms an oxidized material region 80 with a width of Wr in the high Al component materials 40 and 60. The oxidized material region 80 is non-conductive, thereby forming a current channel with a width of 2Wa located inside the emitter waveguide 90. Carriers can only flow inside the current channel, away from the non-radiative recombination defects on the side wall of the emitter waveguide 90, thereby reducing the adverse effects of defects on device performance. When the Al component in the base high Al component material layer 40 and the emitter high Al component material layer 60 is higher than that in other Al-containing material layers, an oxidized material with a width of Wr exists in both material layers. When only one layer of the base high Al component material layer 40 and the emitter high Al component material layer 60 has an Al component higher than that of the other material layers, the oxide material with a width of Wr only exists in the material layer with a higher Al component.

[0039] In operation S304 , the base electrode 31 , the emitter electrode 91 , and the collector electrode 11 are fabricated.

[0040] The transistor laser prepared according to this method selectively oxidizes the Al-containing materials on both sides of the emitter waveguide 90 to form a current channel in the middle of the emitter waveguide 90, thereby limiting the flow of carriers to the central area of ​​the emitter waveguide 90, which can effectively reduce the adverse effects of non-radiative recombination centers on the side walls of the emitter waveguide 90, thereby significantly improving the performance of the transistor laser.

[0041] It will be appreciated by those skilled in the art that the features described in the various embodiments and / or claims of the present disclosure may be combined and / or combined in a variety of ways, even if such combinations and / or combinations are not explicitly described in the present disclosure. In particular, the features described in the various embodiments and / or claims of the present disclosure may be combined and / or combined in a variety of ways without departing from the spirit and teachings of the present disclosure. All of these combinations and / or combinations fall within the scope of the present disclosure.

[0042] Although the present disclosure has been shown and described with reference to specific exemplary embodiments of the present disclosure, it should be understood by those skilled in the art that various changes in form and details may be made to the present disclosure without departing from the spirit and scope of the present disclosure as defined by the appended claims and their equivalents. Therefore, the scope of the present disclosure should not be limited to the above-mentioned embodiments, but should be determined not only by the appended claims, but also by the equivalents of the appended claims.

Claims

1. A transistor laser, characterized in that: include: A substrate (10), a collector layer material layer (20), a base material layer (30), a base high Al component material layer (40), a quantum well material layer (50), an emitter high Al component material layer (60), an emitter material layer (70), a base electrode, an emitter electrode, and a collector electrode; The collector layer material layer (20), the base material layer (30), the base high Al component material layer (40), the quantum well material layer (50), the emitter high Al component material layer (60), and the emitter material layer (70) are sequentially grown on the substrate (10); The emitter material layer (70), the emitter high Al component material layer (60), the quantum well material layer (50) and the base high Al component material layer (40) are etched to form an emitter waveguide (90); The base electrode is arranged on the base material layer (30) and is not connected to the emitter waveguide (90); The emitter electrode is arranged on the emitter material layer (70); The collector electrode is arranged on the lower surface of the substrate (10); Wherein, at least one of the base high Al component material layer (40) and the emitter high Al component material layer (60) has an area close to two side walls of the emitter waveguide (90) oxidized; The material of the substrate (10) is InP, and the material of the collector layer material layer (20) is InGaAsP or In （1-x-y） Ga x Al y As, the material of the base material layer (30) is InGaAsP or In （1-x-y） Ga x Al y As, the material of the base high Al component material layer (40) is In （1-x-y） Ga x Al y As, the material of the quantum well material layer (50) is InGaAsP or In （1-x-y） Ga x Al y As, the material of the emitter high Al component material layer (60) is In （1-x-y） Ga x Al y As, the material of the emitter material layer (70) is InP.

2. The transistor laser according to claim 1, characterized in that At least one of the base high Al component material layer (40) and the emitter high Al component material layer (60) has a higher Al element content than the other material layers.

3. The transistor laser according to claim 1, characterized in that The non-oxidized region of the base high Al component material layer (40) and / or the emitter high Al component material layer (60) constitutes a current channel of the transistor laser.

4. The transistor laser according to claim 1, characterized in that The oxidized regions of the base high Al component material layer (40) and / or the emitter high Al component material layer (60) are non-conductive.

5. A method for preparing a transistor laser, characterized in that: The method comprises: A collector layer material layer (20), a base material layer (30), a base high Al component material layer (40), a quantum well material layer (50), an emitter high Al component material layer (60), and an emitter material layer (70) are sequentially grown on a substrate (10); Etching the emitter material layer (70), the emitter high Al component material layer (60), the quantum well material layer (50) and the base high Al component material layer (40) to form an emitter waveguide (90); Laterally oxidizing a region of at least one of the base high Al component material layer (40) and the emitter high Al component material layer (60) close to two side walls of the emitter waveguide (90); A base electrode is fabricated on the base material layer (30), the base electrode is not connected to the emitter waveguide (90), an emitter electrode is fabricated on the emitter material layer (70), and a collector electrode is fabricated on the lower surface of the substrate (10), thereby obtaining a transistor laser.

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