High-reliability general-purpose chip and method of use

Abstract

The application provides a high-reliability universal chip and a use method, adopts a double waveguide structure, each waveguide structure has an independent electrode, one waveguide structure is used by separate wire bonding in use, when damage or abnormality exists in one of the waveguide structures, another waveguide structure can be switched to be used for wire bonding, and the reliability is doubled under the condition that the chip area is increased by 33%; the middle cleavage zone can be cleaved and separated, namely two double waveguide chips, and the universality of chip design is increased; a light-emitting angle mark is arranged, installation operation is facilitated, directivity is strong, and coupling is facilitated; and the application has simple structure, convenient operation, high universality and high reliability.

Description

TECHNICAL FIELD

[0001] The application relates to the technical field of semiconductor lasers, in particular to a high-reliability general-purpose chip and a use method. BACKGROUND

[0002] With the development and progress of the structure optimization technology, the material epitaxial growth technology, the cavity surface passivation technology and the packaging technology of semiconductor lasers, the miniaturization of semiconductor lasers enables the research on the integration of the semiconductor lasers into other high-end laser systems as core devices to achieve higher output power, stronger reliability, better electro-optical conversion efficiency and narrow-linewidth wavelength tunable laser output to be highly concerned in the global range, so that an integrated laser device called a laser gain chip becomes a "neck-stifling" technology subject to the rapid development of the laser industry.

[0003] As a core component of semiconductor lasers, the laser gain chip plays an important role in the industrialization, integration, miniaturization and cost reduction of various types of semiconductor lasers. Among numerous semiconductor laser products, vertical cavity surface emitting lasers (VCSELs) and semiconductor narrow-linewidth tunable lasers are more dependent on the laser gain chip. SUMMARY

[0004] In view of the problems in the prior art, the application provides a high-reliability general-purpose chip and a use method, which are simple in structure, convenient to operate, and have strong universality and reliability.

[0005] The application is achieved by the following technical solutions:

[0006] A high-reliability general-purpose chip, characterized in that it comprises a double-waveguide structure, a cleavage region and an optical angle identifier.

[0007] The double-waveguide structure is independently provided with an electrode.

[0008] The double-waveguide structure is provided with the cleavage region penetrating through the middle, and the same double-waveguide structure located on both sides of the cleavage region is connected through wire bonding.

[0009] The optical angle identifier is arranged in a group of diagonal regions of the chip.

[0010] Further, the width of the chip is not less than 400 mu m.

[0011] Further, the width of the cleavage region is not less than 20 mu m.

[0012] Further, the optical angle identifier adopts an electrode shape identifier.

[0013] Furthermore, the electrodes in the dual waveguide structure are each independently spaced.

[0014] A method for using a high-reliability general-purpose chip includes the following steps:

[0015] Determine the required chip type. If the waveguide structure cavity length of the chip is relatively long, select one of the waveguide structures in the dual waveguide structure and bridge the cleaved region by wire bonding. The other waveguide structure is reserved.

[0016] If the waveguide structure cavity length of the chip is short, the cleavage region is divided to form two gain chips, and one of the waveguide structures in the dual waveguide structure of one of the gain chips is selected, while the other waveguide structure and the other gain chip are spares.

[0017] Furthermore, each of the cleaved chips contains a light emission angle indicator.

[0018] Furthermore, the chip is characterized by being obtained using MASK pattern processing.

[0019] Furthermore, the cleavage is performed by cutting.

[0020] Compared with the prior art, the present invention has the following beneficial technical effects:

[0021] This invention provides a highly reliable universal chip and its usage method. It employs a dual-waveguide structure, with each waveguide structure having an independent electrode. During use, a single waveguide structure is used for wire bonding. If one waveguide structure is damaged or malfunctioning, the other waveguide structure can be switched for wire bonding. Reliability is doubled while increasing chip area by 33%. The central cleaving region can be separated, resulting in two dual-waveguide chips, increasing the versatility of chip design. An emission angle indicator facilitates installation and operation, providing strong directivity and easy coupling. This invention has a simple structure, is easy to operate, and possesses extremely high versatility and reliability. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of the structure of a high-reliability general-purpose chip in a specific embodiment of the present invention;

[0023] Figure 2 This is a schematic diagram illustrating the operation of connecting electrodes to the cleavage region in a specific embodiment of the present invention;

[0024] Figure 3 This is a schematic diagram of the structure after the cleavage region is separated in a specific embodiment of the present invention. Detailed Implementation

[0025] The present invention will be further described in detail below with reference to specific embodiments. These descriptions are for explanation purposes only and are not intended to limit the scope of the invention.

[0026] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0027] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0028] This invention provides a high-reliability general-purpose chip, such as... Figure 1 As shown, it includes a dual waveguide structure, cleavage region, and optical angle markings;

[0029] Each of the dual waveguide structures has an independently set electrode;

[0030] A cleavage region is provided through the middle of the dual waveguide structure, and the same dual waveguide structure located on both sides of the cleavage region is connected by wire bonding;

[0031] The optical angle markers are located in a set of diagonal areas of the chip.

[0032] Furthermore, the width of the chip is not less than 400μm.

[0033] Furthermore, the width of the cleavage region is not less than 20μm. Specifically, the cleavage region can be cleaved to achieve the conversion between the S-LED chip and the gain chip.

[0034] Furthermore, the optical angle indicator is indicated by an electrode shape.

[0035] Furthermore, the electrodes of the dual waveguide structures are independently spaced to meet the circuit logic basis of the backup waveguide structure.

[0036] This invention provides a method for using a high-reliability general-purpose chip, such as... Figure 2 and Figure 3As shown, it includes the following steps:

[0037] Determine the required chip type. If the waveguide structure cavity length of the chip is relatively long, select one of the waveguide structures in the dual waveguide structure and bridge the cleaved region by wire bonding. The other waveguide structure is reserved.

[0038] If the waveguide structure cavity length of the chip is short, the cleavage region is divided to form two gain chips, and one of the waveguide structures in the dual waveguide structure of one of the gain chips is selected, while the other waveguide structure and the other gain chip are spares.

[0039] Furthermore, each of the cleaved chips contains a light emission angle indicator.

[0040] Furthermore, the chip is obtained using MASK graphics processing.

[0041] Furthermore, the cleavage is performed by cutting.

[0042] A preferred embodiment of the present invention is as follows: when manufacturing an S-LED chip with a required waveguide structure cavity length of 1 mm, the entire cavity length is designed to be 1 mm. One waveguide structure in a dual waveguide structure is used. First, the electrodes separated in the cleavage region are wire-connected to make the overall electrodes conductive, thus forming an S-LED chip with a waveguide structure cavity length of 1 mm. If this waveguide structure malfunctions, it is switched to another set of waveguide structures for wire connection.

[0043] If a gain chip with a waveguide structure and a cavity length of 0.5mm is required, it can be separated from the cleavage region of this 1mm cavity length S-LED chip, that is, divided into two gain chips with a dual waveguide structure and a cavity length of 0.5mm, one for use and one for backup.

[0044] The cavity length of the specific waveguide structure is determined based on the actual chip structure required.

[0045] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for using a high-reliability general-purpose chip, characterized in that, This includes the dual waveguide structure, cleavage region, and optical angle markings; Each of the dual waveguide structures has an independently set electrode; A cleaving region is provided through the middle of the dual waveguide structure, and the same dual waveguide structure located on both sides of the cleaving region is connected by wire bonding; the cleaving region is cleaved to realize the conversion between S-LED chip and gain chip; The optical angle markers are located in a set of diagonal regions of the chip; the optical angle markers are marked by electrode shapes; different usage methods are selected according to the different cavity lengths of the chip waveguide structure, including using a single waveguide structure or cleaving to form a gain chip; The usage method of high-reliability general-purpose chips includes the following steps: Determine the required chip type. If the waveguide structure cavity length of the chip is relatively long, select one of the waveguide structures in the dual waveguide structure and bridge the cleaved region by wire bonding. The other waveguide structure is reserved. If the waveguide structure cavity length of the chip is short, the cleavage region is divided to form two gain chips, and one of the waveguide structures in the dual waveguide structure of one of the gain chips is selected, while the other waveguide structure and the other gain chip are spares.

2. The method of using a high-reliability general-purpose chip according to claim 1, characterized in that, The width of the chip is not less than 400μm.

3. The method of using a high-reliability general-purpose chip according to claim 1, characterized in that, The width of the cleavage region is not less than 20 μm.

4. The method of using a high-reliability general-purpose chip according to claim 1, characterized in that, The electrodes in the dual waveguide structure are each independently set and spaced apart.

5. The method of using a high-reliability general-purpose chip according to claim 1, characterized in that, Each chip after cleavage and segmentation contains a light emission angle indicator.

6. The method of using a high-reliability general-purpose chip according to claim 1, characterized in that, The chip was obtained using MASK graphics processing.

7. The method of using a high-reliability general-purpose chip according to claim 1, characterized in that, The cleavage is performed by cutting.

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