Carrier device, semiconductor process apparatus and control method thereof

Abstract

The application discloses a bearing device, a semiconductor process equipment and a control method thereof, and relates to the technical field of semiconductor processing. The bearing device comprises a base, a heating layer, an insulating layer and a charge transmission device. An electrode assembly is arranged in the insulating layer, and the insulating layer is fixed on a wafer placed in the bearing device by generating an adsorption voltage through the electrode assembly. A heater is arranged in the heating layer, and the heating layer heats the wafer through the heater. The charge transmission device comprises a first charge transmission assembly and a second charge transmission assembly. A first end of the first charge transmission assembly is connected with the heating assembly, a second end of the first charge transmission assembly is connected with a preset reference voltage end through the second charge transmission assembly, and the first charge transmission assembly and the second charge transmission assembly each comprise two charge transmission elements connected with each other in parallel. The scheme can solve the problem that the residual charge on the electrostatic chuck can generate electrostatic adsorption force on the wafer, thereby causing the wafer to be offset and tilted.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing technology, and in particular to a carrier device, semiconductor process equipment and a control method thereof. Background Art

[0002] In the semiconductor manufacturing process, electrostatic chucks are widely used in semiconductor process equipment.

[0003] One of the purposes of an electrostatic chuck is to support, secure, and control the temperature of the wafer. When semiconductor process equipment is processing a wafer, the electrostatic chuck applies a DC voltage to generate an electrostatic attraction force on the wafer to secure it. Under the action of high-voltage DC, different polarization voltages are generated between the layers of the electrostatic chuck. This means that during the process of applying DC voltage to electrostatically adsorb the wafer, a significant amount of polarized charge remains within the electrostatic chuck. After the process is completed, the residual charge on the electrostatic chuck generates an electrostatic attraction force on the wafer, causing it to stick. That is, when removing the processed wafer, the electrostatic attraction force generated by the residual charge can cause the wafer to shift and tilt, or even cause retrieval to fail. Summary of the Invention

[0004] The present invention discloses a carrier device, semiconductor process equipment and a control method thereof, which are used to solve the problem that residual charges on an electrostatic chuck generate electrostatic adsorption force on a wafer, causing the wafer to deviate and tilt.

[0005] In order to solve the above problems, the present invention adopts the following technical solutions:

[0006] The carrier device of the present invention comprises a base, a heating layer, an insulating layer and a charge transfer device, wherein the heating layer and the insulating layer are stacked on the base, and the heating layer is located between the base and the insulating layer;

[0007] An electrode assembly is provided in the insulating layer, and the insulating layer generates an adsorption voltage through the electrode assembly to fix the wafer placed on the carrier device;

[0008] A heater is provided in the heating layer, and the heating layer heats the wafer through the heater;

[0009] The charge transfer device includes a first charge transfer component and a second charge transfer component, wherein a first end of the first charge transfer component is connected to the heater, and a second end of the first charge transfer component is connected to a preset reference voltage terminal through the second charge transfer component;

[0010] The first charge transfer component includes a first charge transfer element and a second charge transfer element, the first charge transfer element and the second charge transfer element being connected in parallel;

[0011] The second charge transfer component includes a third charge transfer element and a fourth charge transfer element, and the third charge transfer element and the fourth charge transfer element are connected in parallel.

[0012] Based on the carrier device of the present invention, the present invention further provides a semiconductor process equipment, which includes the carrier device of the present invention and a process chamber, wherein the carrier device is disposed in the process chamber.

[0013] Based on the semiconductor process equipment described in the present invention, the present invention also provides a control method for the semiconductor process equipment. The control method includes:

[0014] closing the switch;

[0015] The detection component monitors and diagnoses faults of the charge transfer device.

[0016] The technical solution adopted by the present invention can achieve the following beneficial effects:

[0017] In the carrier device disclosed in the embodiment of the present invention, the charge transfer device can transfer the residual charge of the heater to the preset reference voltage terminal, thereby avoiding the generation of electrostatic adsorption force between the wafer and the heater after the wafer processing is completed, and preventing the wafer from tilting. In addition, the first charge transfer element and the second charge transfer element of the first charge transfer component are connected in parallel, and the third charge transfer element and the fourth charge transfer element of the second charge transfer component are connected in parallel. In the event that any one of the first charge transfer element, the second charge transfer element, the third charge transfer element and the fourth charge transfer element fails, the charge transfer device can still transfer the residual charge of the heater to the preset reference voltage terminal. That is, the charge transfer device described in this solution has single fault tolerance. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0019] Figure 1 A schematic diagram of the connection between the inductive filter device and the heater disclosed in one embodiment of the present invention;

[0020] Figure 2 A schematic structural diagram of a carrying device disclosed in an embodiment of the present invention;

[0021] Figure 3 A control flow chart of a semiconductor process equipment disclosed in one embodiment of the present invention.

[0022] In the figure: 100-heating layer; 110-heater; 200-charge transfer device; 210-first charge transfer component; 211-first charge transfer element; 212-second charge transfer element; 220-second charge transfer component; 221-third charge transfer element; 222-fourth charge transfer element; 230-third charge transfer component; 231-fifth charge transfer element; 232-sixth charge transfer element; 300-detection component; 310-detection device; 320-fault judgment device; 400-switch; 500-base; 600-insulating layer; 700-inductor filtering device. DETAILED DESCRIPTION

[0023] To make the objectives, technical solutions, and advantages of the present invention more clear, the technical solutions of the present invention will be clearly and completely described below in conjunction with specific embodiments of the present invention and corresponding drawings. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0024] The following combination Figures 1 to 3 , describes in detail the technical solutions disclosed in each embodiment of the present invention.

[0025] Reference Figure 1 and Figure 2 The carrier device of the present invention includes a base 500, a heating layer 100, an insulating layer 600 and a charge transfer device 200. The base 500 is a basic structural component that can provide a mounting foundation for the heating layer 100, the insulating layer 600 and / or the charge transfer device 200.

[0026] Illustratively, the insulating layer 600 and the heating layer 100 are stacked on the base 500, with the heating layer 100 located between the insulating layer 600 and the base 500. An electrode assembly is disposed within the insulating layer 600. During wafer processing, the insulating layer 600 generates an adsorption voltage through the electrode assembly to secure the wafer placed on the carrier. Optionally, the insulating layer 600 is made of ceramic.

[0027] In an optional embodiment, a support surface is provided on a side of the insulating layer 500 away from the heating layer 100. During wafer processing, the wafer is placed on the support surface. Exemplarily, the electrode assembly is connected to a first power source, which provides a DC voltage to the electrode assembly via the first power source, so that the electrode assembly can absorb and secure the wafer placed on the carrier. Optionally, the first power source is a DC power source.

[0028] In an optional embodiment, a heater 110 is provided in the heating layer 100, and the heating layer 100 heats the wafer via the heater 110. Exemplarily, the heater 110 is connected to a second power source. Optionally, the second power source is an alternating current (AC).

[0029] Reference Figure 1 The charge transfer device 200 includes a first charge transfer component 210 and a second charge transfer component 220. The first end of the first charge transfer component 210 is connected to the heater 110, and the second end of the first charge transfer component 210 is connected to a preset reference voltage terminal through the second charge transfer component 220. The first charge transfer component 210 includes a first charge transfer element 211 and a second charge transfer element 212, which are connected in parallel. The second charge transfer component 220 includes a third charge transfer element 221 and a fourth charge transfer element 222, which are connected in parallel.

[0030] In an optional embodiment, the carrier device of the present invention can be used as an electrostatic chuck. For example, during wafer processing, a DC voltage is applied to the electrode assembly, i.e., a chuck operation, so that the carrier device adsorbs and fixes the wafer placed on the carrier device.

[0031] In related art, after wafer processing is completed, the electrostatic chuck undergoes a dechuck operation to reduce the electrostatic chuck's adsorption force on the wafer. Specifically, the dechuck operation applies a reverse DC voltage to the electrode assembly to remove the electrostatic chuck's adsorption force on the wafer.

[0032] However, in the related art, the desorption operation takes too long, and the electrostatic chuck will generate a reverse polarization voltage under the action of the reverse DC voltage. In addition, as mass production progresses, the charge inside the electrostatic chuck continues to accumulate and the uneven distribution of the charge becomes increasingly apparent, making it difficult to neutralize all the charges carried by the electrostatic chuck during the desorption operation. Due to the residual charge in the electrostatic chuck, the electrostatic chuck still has a certain adsorption force on the wafer on the electrostatic chuck after the desorption operation. After the wafer processing is completed and the wafer is removed, the adsorption force of the electrostatic chuck on the wafer can easily cause the wafer to shift.

[0033] The second end of the first charge transfer component 210 is connected to a preset reference voltage terminal via the second charge transfer component 220. That is, the first charge transfer component 210 and the second charge transfer component 220 are connected in series. For example, the preset reference voltage terminal can be a zero potential terminal. Alternatively, the preset reference voltage terminal can be a ground terminal.

[0034] In the above embodiment, the carrier is connected to a preset reference voltage terminal via the charge transfer device 200. After wafer processing is completed, the charge transfer device 200 transfers the residual charge on the heater 110 to the preset reference voltage terminal, thereby reducing or eliminating the residual charge on the heater 110 and preventing wafer deviation caused by the carrier's suction force on the wafer.

[0035] Furthermore, the first charge transfer element 211 and the second charge transfer element 212 of the first charge transfer assembly 210 are connected in parallel, and the third charge transfer element 221 and the fourth charge transfer element 222 of the second charge transfer assembly 220 are connected in parallel. In the event of a failure in any of the first charge transfer element 211, the second charge transfer element 212, the third charge transfer element 221, and the fourth charge transfer element 222, the charge transfer device 200 can still transfer the residual charge in the heater 110 to the preset reference voltage terminal. In other words, the charge transfer device 200 described in this solution has single-fault tolerance.

[0036] There are many reasons for the failure of the charge transfer element. For example, as the use time increases, the charge transfer element is prone to aging, which leads to open circuit or short circuit failure. Of course, the charge transfer element may also be open circuit or short circuit due to factors such as manufacturing defects, external stress, and excessive working power. In the above embodiment, the charge transfer device 200 can transfer the residual charge on the heater 110 to the preset reference voltage end when any one of the first charge transfer element 211, the second charge transfer element 212, the third charge transfer element 221 and the fourth charge transfer element 222 is open circuit or short circuit. In the case where the carrier device described in the above embodiment is applied to semiconductor process equipment, the charge transfer device 200 can ensure that the semiconductor process equipment can still work after an unforeseen failure occurs in a certain charge transfer element, so as to avoid the failure of a certain charge transfer element of the charge transfer device 200 affecting wafer processing.

[0037] Reference Figure 1 The carrying device also includes a detection component 300, which is connected to the charge transfer device 200, and the connection part between the detection component 300 and the charge transfer device 200 is located between the first charge transfer component 210 and the second charge transfer component 220, and the detection component 300 is used to monitor and diagnose faults of the charge transfer device 200.

[0038] In the above-described embodiment, the detection assembly 300 monitors and diagnoses faults in the charge transfer device 200, thereby facilitating timely detection of faults in the charge transfer device 200 and facilitating maintenance personnel's maintenance of the carrier device. It should be noted that if the detection assembly 300 detects a fault in a charge transfer element of the charge transfer device 200, the charge transfer device 200 can be repaired after the processing of the currently processed wafer is completed, thereby avoiding the need to halt the ongoing wafer processing due to a single fault in the charge transfer device 200.

[0039] In an optional embodiment, the carrier device further includes an alarm. Exemplarily, the alarm is connected to the detection assembly 300. When the detection assembly 300 diagnoses a fault in the charge transfer device 200, the alarm sounds. The carrier device described in this embodiment can promptly alert personnel through the alarm if a fault occurs in the charge transfer device 200, facilitating their identification.

[0040] There are many types of alarms, such as warning lights, display screens showing alarms or buzzer sounding alarms. For this reason, the present embodiment does not limit the specific types of alarms.

[0041] Reference Figure 1 Detection assembly 300 includes a detection device 310 and a fault diagnosis device 320. Detection device 310 has a detection terminal and an output terminal. The detection terminal is connected to charge transfer device 200, and the output terminal is connected to fault diagnosis device 320. Exemplarily, detection device 310 is configured to detect the voltage or current at the connection between first charge transfer assembly 210 and second charge transfer assembly 220. Fault diagnosis device 320 monitors and diagnoses faults based on the detection information from detection device 310.

[0042] Exemplarily, when the detection value of the detection device 310 is not equal to the preset value, the fault judgment device 320 determines that the charge transfer device 200 has a fault. It should be noted that during the operation of the carrier device, the voltage and current corresponding to the circuit in the heater 110 are relatively stable. Therefore, when the charge transfer device 200 does not fail, the voltage or current at the connection between the first charge transfer component 210 and the second charge transfer component 220 is relatively stable. The preset value described in this embodiment can be the voltage value or current value at the connection between the first charge transfer component 210 and the second charge transfer component 220 when the charge transfer device 200 does not fail. Specifically, it can be determined whether the charge transfer device 200 has a fault by comparing whether the detection value of the detection device 310 is within the range of the preset value.

[0043] For example, the carrier device described in the above embodiment can also determine whether the fault occurs in the first charge transfer component 210 or the second charge transfer component 220 when a single fault occurs in the charge transfer device 200. For example, if one of the first charge transfer element 211 and the second charge transfer element 212 is open-circuited, the voltage value detected by the detection device 310 is less than a preset value. If one of the third charge transfer element 221 and the fourth charge transfer element 222 is open-circuited, the voltage value detected by the detection device 310 is greater than a preset value. If one of the first charge transfer element 211 and the second charge transfer element 212 is short-circuited, the voltage value detected by the detection device 310 is greater than a preset value. If one of the third charge transfer element 221 and the fourth charge transfer element 222 is short-circuited, the voltage value detected by the detection device 310 is less than a preset value.

[0044] Reference Figure 1 The charge transfer device 200 further includes a third charge transfer component 230. The first end of the first charge transfer component 210 is connected to the heater 110 via the third charge transfer component 230. That is, the third charge transfer component 230 is connected in series with the first charge transfer component 210. For example, the third charge transfer component 230 includes a fifth charge transfer element 231 and a sixth charge transfer element 232, and the fifth charge transfer element 231 and the sixth charge transfer element 232 are connected in parallel.

[0045] For example, when any one of the fifth charge transfer element 231, the sixth charge transfer element 232, the first charge transfer element 211, and the second charge transfer element 212 is short-circuited, the detection component 300 can be prevented from being directly connected to the heater 110, thereby preventing the voltage in the heater 110 from being too high and causing damage to the detection component 300.

[0046] In another optional embodiment, the detection assembly 300 further includes a circuit protection element. For example, the circuit protection element can be disposed between the detection device 310 and the charge transfer device 200 to prevent damage to the detection assembly 300 caused by excessive voltage within the heater 110. There are many types of circuit protection elements. For example, the circuit protection element can be a resistor, a fuse, or an air switch. Therefore, this embodiment does not limit the specific type of circuit protection element.

[0047] In an optional embodiment, the impedance value of the fifth charge transfer element 231 is a fifth impedance value, the impedance value of the first charge transfer element 211 is a first impedance value, and the impedance value of the second charge transfer element 212 is a second impedance value. Both the first impedance value and the second impedance value are not equal to the fifth impedance value.

[0048] In the above embodiment, when a single fault occurs in the charge transfer device 200, the fault judgment device 320 can determine which charge transfer component among the first charge transfer component 210, the second charge transfer component 220 and the third charge transfer component 230 has failed based on the detection value of the detection device 310.

[0049] It should be noted that a single fault in the charge transfer device 200 described in the present application refers to a fault in any one of the first charge transfer element 211, the second charge transfer element 212, the third charge transfer element 221, the fourth charge transfer element 222, the fifth charge transfer element 231 and the sixth charge transfer element 232.

[0050] In an optional embodiment, the first charge transfer element 211 , the second charge transfer element 212 , the third charge transfer element 221 , the fourth charge transfer element 222 , the fifth charge transfer element 231 and the sixth charge transfer element 232 may be resistors.

[0051] The impedance value of the third charge transfer element 221 is a third impedance value, the impedance value of the fourth charge transfer element 222 is a fourth impedance value, and the impedance value of the sixth charge transfer element 232 is a sixth impedance value. For example, the voltage at the connection between the charge transfer device 200 and the heater 110 is 180V. The first and second impedance values ​​are both 6MΩ; the third and fourth impedance values ​​are both 6MΩ; and the fifth and sixth impedance values ​​are both 12MΩ. Therefore, the impedance value of the first charge transfer component 210 is 3MΩ; the impedance value of the second charge transfer component 220 is 3MΩ; and the impedance value of the third charge transfer component 230 is 6MΩ.

[0052] Therefore, when the charge transfer device 200 is fault-free, the input voltage of the detection device 310 is 45VAC, that is, the voltage value detected by the detection device 310 is 45VAC. Similarly, when the fifth charge transfer element 231 or the sixth charge transfer element 232 is short-circuited, the impedance value of the third charge transfer component 230 is 0MΩ, and the input voltage of the detection device 310 is 90VAC, that is, the voltage value detected by the detection device 310 is 90VAC. When the fifth charge transfer element 231 or the sixth charge transfer element 232 is open-circuited, the impedance value of the third charge transfer component 230 is 12MΩ, and the input voltage of the detection device 310 is 30VAC, that is, the voltage value detected by the detection device 310 is 30VAC. This can be used to obtain a fault table for the charge transfer device 200, as shown in Table 1.

[0053] Table 1:

[0054] Detection device input voltage Test results 45VAC normal 90VAC R5 or R6 short circuit 30VAC R5 or R6 is open 60VAC R1 or R2 short circuit 36VAC R1 or R2 is open 0VAC R3 or R4 short circuit 72VAC R3 or R4 is open

[0055] It should be noted that in Table 1, R1 is the first charge transfer element 211; R2 is the second charge transfer element 212; R3 is the third charge transfer element 221; R4 is the fourth charge transfer element 222; R5 is the fifth charge transfer element 231; and R6 is the sixth charge transfer element 232.

[0056] In an optional embodiment, detection device 310 may be a rectifier, and fault determination device 320 may be a programmable logic device, such as a single-chip microcomputer or a programmable logic controller (PLC). In this embodiment, the rectifier may convert the alternating current (AC) between first charge transfer component 210 and second charge transfer component 220 into a DC voltage signal. Fault determination device 320 determines the fault type of charge transfer device 200 based on this DC voltage signal.

[0057] In a further optional embodiment, the sixth impedance value is not equal to the fifth impedance value, and the first impedance value is not equal to the second impedance value, so that the fault judgment device 320 can determine which specific charge transfer element among the first charge transfer element 211, the second charge transfer element 212, the fifth charge transfer element 231 and the sixth charge transfer element 232 has a fault based on the detection value of the detection device 310 when a single fault occurs in the charge transfer device 200, so that the staff can accurately determine the fault location of the charge transfer device 200.

[0058] Furthermore, the third impedance value and the fourth impedance value are not equal to the fifth impedance value, so that the fault determination device 320 can accurately determine which charge transfer element in the charge transfer device 200 has failed based on the detection value of the detection device 310 when a single fault occurs in the charge transfer device 200.

[0059] The above embodiment can determine the status of each charge transfer element in the ground loop of the charge transfer device 200 through the detection component 300, thereby determining whether the charge transfer device 200 has a fault, and determining the fault point and fault type to facilitate maintenance by staff.

[0060] In an optional embodiment, the impedance values ​​of the first charge transfer element 211, the second charge transfer element 212, the third charge transfer element 221, the fourth charge transfer element 222, the fifth charge transfer element 231 and the sixth charge transfer element 232 are all greater than or equal to 200K.

[0061] In the above embodiment, even if a single fault occurs in the charge transfer device 200, the input voltage of the detection assembly 300 can be ensured to be less than the voltage of the AC power supply, thereby protecting the detection assembly 300. Furthermore, this embodiment prevents the overall impedance of the charge transfer device 200 from exceeding 200K in the event of a single fault in the charge transfer device 200. This, in turn, prevents an increase in the internal current of the heater 110, which could damage the load-bearing device or malfunction the load-bearing device's temperature compensation function.

[0062] Of course, the impedance value of the first charge transfer element 211, the second charge transfer element 212, the third charge transfer element 221, the fourth charge transfer element 222, the fifth charge transfer element 231, or the sixth charge transfer element 232 may also be less than 200K. Therefore, this embodiment does not limit the range of the impedance value of the charge transfer elements in the charge transfer device 200.

[0063] For example, different fault types and fault locations of the charge transfer device 200 correspond to different alarm signals. Different signal markers can be displayed on different screens, with different voice prompts, illuminated with different colors, or with different alarm lights, so that personnel can quickly determine the fault type and location.

[0064] Reference Figure 1 The carrier device further includes a switch 400, which is connected to the heater 110 and the charge transfer device 200. When the switch 400 is closed, the residual charge on the heater 110 can be transferred from the charge transfer device 200 to the preset reference voltage terminal. In this embodiment, the user can choose whether to transfer the residual charge in the heater 110 to the preset reference voltage terminal via the charge transfer device 200 according to actual needs.

[0065] In an optional embodiment, the switch 400 is connected to the fault determination device 320 and is connected to the detection assembly 300. If the detection assembly 300 determines that the charge transfer device 200 has a short circuit fault, the switch 400 is opened. In this embodiment, if a charge transfer element in the charge transfer device 200 has a short circuit fault, the switch 400 can be opened to prevent the simultaneous short circuit faults of multiple charge transfer elements in the heater 110 from causing excessive current in the heater 110 to damage the detection assembly 300 and / or the heater 110, thereby preventing abnormal heating function of the carrier device.

[0066] Reference Figure 1, the carrying device includes an inductor filter device 700. The first end of the inductor filter device 700 is connected to the heater 110, and the second end of the inductor filter device 700 is connected to the AC power supply. Exemplarily, the second end of the inductor filter device 700 is connected to the second power supply, so that the heater 110 is connected to the second power supply through the inductor filter device 700. Further, the switch 400 is connected between the second end of the inductor filter device 700 and the AC power supply. It should be noted that the heater 110 generates heat when connected to AC power, which is used to heat the wafer placed on the carrying device. The inductor filter device 700 can ensure the safety of the components at the power supply end of the heater 110.

[0067] The carrier device described in the above embodiment can release residual charge in the heater 110 via the charge transfer device 200 when the AC power supply is at a negative phase voltage. Therefore, this solution can intermittently release residual charge in the heater 110 using the charge transfer device 200 during wafer processing. During the chuck and processing process, the electrode assembly of the carrier device is loaded with a clamping voltage, which continuously generates polarized charge. When the AC power supply connected to the heater 110 in the heating layer 100 is at a negative phase voltage, the heater 110 can be connected to the preset reference voltage terminal via the charge transfer device 200, allowing the residual charge in the heater 110 to be released to ground. This is referred to as intermittent discharge. Specifically, when the AC power supply is at a negative phase voltage, the potential at the connection between the charge transfer device 200 and the heater 110 is zero. Because the residual charge in the heater 110 remains, the residual charge can be transferred from the charge transfer device 200 to the preset reference voltage terminal. During the dechuck operation, the clamping voltage applied to the electrode assembly of the carrier device is disconnected, and thus no longer generates polarized charge. Therefore, the residual charge only needs to be released once, so it is no longer an intermittent release.

[0068] Based on the carrier device described in the present invention, an embodiment of the present invention further provides a semiconductor processing apparatus. The semiconductor processing apparatus includes the carrier device described in any embodiment of the present application. The semiconductor processing apparatus also includes a process chamber, and the carrier device is disposed within the process chamber to support, secure, and temperature-control wafers being processed within the chamber.

[0069] Reference Figure 3 Based on the semiconductor process equipment described in the present invention, the present invention further provides a control method for the semiconductor process equipment. The control method is applicable to the semiconductor process equipment described in the present invention. Exemplarily, the control method includes:

[0070] Step 101: Close the switch 400;

[0071] Step 102 : The detection component 300 monitors and performs fault diagnosis on the charge transfer device 200 .

[0072] For example, the staff can choose whether to enable the charge transfer device 200 as needed. In the case of determining to enable the charge transfer device 200, the switch 400 is closed so that the charge transfer device 200 can be used to transfer the residual charge on the heater 110 to the preset reference voltage end. For example, after the wafer processing is completed, the charge transfer device 200 can be used to transfer the residual charge on the heater 110 to the preset reference voltage end, thereby avoiding the wafer being deflected by the adsorption force of the residual charge on the heater 110 during the process of removing the wafer placed on the carrier, thereby improving the stability of the wafer removal process. It should be noted that the wafer removal process described in the present invention refers to the process of removing the wafer from the carrier.

[0073] Furthermore, the detection component 300 monitors and diagnoses faults in the charge transfer device 200, and can determine whether the charge transfer device 200 is functioning properly when the charge transfer device 200 is enabled. This step helps to troubleshoot faults in a timely manner, preventing faults in the charge transfer device 200 from affecting wafer processing.

[0074] Reference Figure 3 In the case where the detection component diagnoses that the charge transfer device 200 has no fault, the control method of the semiconductor process equipment further includes:

[0075] Step 103 : The charge transfer device 200 transfers the residual charge on the heater 110 to a preset reference voltage terminal.

[0076] Furthermore, the control method of the semiconductor process equipment further includes:

[0077] Step 104: placing the wafer on a carrier in the process chamber;

[0078] Step 105: The electrode assembly applies an adsorption voltage to fix the wafer on the carrier;

[0079] Step 106: Processing the wafer;

[0080] Step 107: releasing the adsorption voltage applied to the electrode assembly;

[0081] Step 108: Remove the wafer.

[0082] Exemplarily, step 103 is performed before step 108 to prevent wafer deflection due to residual charge during wafer removal. Furthermore, step 103 is performed simultaneously with steps 106 and 107 to prevent charge accumulation within heater 110 , thereby effectively transferring all charge within heater 110 to a preset reference voltage terminal before wafer removal.

[0083] It should be noted that when the switch 400 is connected between the second terminal of the inductive filter device 700 and the AC power supply, and the negative phase voltage of the AC power supply is connected to the heater 110, the charge in the heater 110 can be transferred to the preset reference voltage terminal via the charge transfer device 200. Optionally, the preset reference voltage terminal is a ground terminal, thereby allowing the charge in the heater 110 to be transferred to the ground terminal.

[0084] Reference Figure 3 In the case where the detection component 300 diagnoses that the charge transfer device 200 has an open circuit fault, the control method of the semiconductor process equipment further includes:

[0085] Step 109: The alarm device sends out a circuit breaker alarm signal;

[0086] Step 110 : The charge transfer device 200 transfers the residual charge on the heater 110 to a preset reference voltage terminal.

[0087] In the above facts, step 109 can realize a fault alarm, thereby facilitating operators to discover the fault when a fault occurs in the charge transfer device 200 .

[0088] It should be noted that even if any one of the charge transfer elements of the charge transfer device 200 experiences a short circuit fault, the charge transfer device 200 can still transfer the residual charge in the heater 110 to the preset reference voltage terminal. Therefore, even if a single short circuit fault occurs in the charge transfer device 200, i.e., if any one of the charge transfer elements in the charge transfer device 200 fails, the fault can be diagnosed by the detection component 300 and an alarm signal can be issued by the alarm without affecting the semiconductor process equipment's wafer processing.

[0089] Reference Figure 3 In an optional embodiment, when the detection component 300 diagnoses a short circuit fault in the charge transfer device 200, the control method of the semiconductor process equipment further includes:

[0090] Step 111: The alarm device sends a short circuit alarm signal;

[0091] Step 112: Turn off the switch 400;

[0092] Step 113: The electrode assembly applies an adsorption voltage to fix the wafer on the carrier;

[0093] Step 114: Process the wafer.

[0094] It should be noted that, in the event of a short circuit failure in any charge transfer element of the charge transfer device 200, the charge transfer device 200 can still transfer the residual charge in the heater 110 to the preset reference voltage terminal, and the corresponding impedance value of the charge transfer device 200 is greater than zero.

[0095] In the above embodiment, step 111 can realize a fault alarm, so that when a fault occurs in the charge transfer device 200, the operator can find the fault. Step 112 can prevent two or more charge transfer elements from being short-circuited in the charge transfer device 200 by disconnecting the switch 400. Therefore, this embodiment can prevent the first charge transfer component 210 and the second charge transfer component 220 in the charge transfer device 200 from being short-circuited at the same time. It can prevent the impedance value of the charge transfer device 200 from being too small after a short-circuit fault occurs, causing damage to the carrier device or abnormal temperature compensation function of the carrier device. Specifically, step 111 and step 112 can be performed simultaneously or step 112 can be reduced first and then step 111. Step 111 can also be performed first and then step 112. For this reason, this embodiment does not limit the order between step 111 and step 112.

[0096] It should be noted that in the above embodiment, even after the switch 400 is disconnected, the semiconductor process equipment can continue to process wafers. Therefore, the control method for semiconductor process equipment described in the present invention can prevent a malfunction of the charge transfer device 200 from affecting the operation of the semiconductor process equipment. Therefore, the control method for semiconductor process equipment described in the present invention can improve the operational stability of the semiconductor process equipment and prevent abnormalities in the charge transfer device 200 from affecting wafer processing.

[0097] The above embodiments of the present invention focus on the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here.

[0098] The foregoing is merely an embodiment of the present invention and is not intended to limit the present invention. It will be apparent to those skilled in the art that various modifications and variations of the present invention are possible. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention are intended to be included within the scope of the claims of the present invention.

Claims

1. A carrying device, characterized in that: The device comprises a base (500), a heating layer (100), an insulating layer (600), a charge transfer device (200), and a detection component (300), wherein the heating layer (100) and the insulating layer (600) are stacked on the base (500), and the heating layer (100) is located between the base (500) and the insulating layer (600); An electrode assembly is provided in the insulating layer (600), and the insulating layer (600) generates an adsorption voltage through the electrode assembly to fix the wafer placed on the carrier device; A heater (110) is provided in the heating layer (100), and the heating layer (100) heats the wafer via the heater (110); The charge transfer device (200) comprises a first charge transfer component (210) and a second charge transfer component (220), wherein a first end of the first charge transfer component (210) is connected to the heater (110), and a second end of the first charge transfer component (210) is connected to a preset reference voltage terminal via the second charge transfer component (220); The first charge transfer component (210) comprises a first charge transfer element (211) and a second charge transfer element (212), wherein the first charge transfer element (211) and the second charge transfer element (212) are connected in parallel; The second charge transfer component (220) comprises a third charge transfer element (221) and a fourth charge transfer element (222), wherein the third charge transfer element (221) and the fourth charge transfer element (222) are connected in parallel; The detection component (300) is connected to the charge transfer device (200), and the connection portion between the detection component (300) and the charge transfer device (200) is located between the first charge transfer component (210) and the second charge transfer component (220), and the detection component (300) is used to monitor and diagnose faults of the charge transfer device (200).

2. The carrying device according to claim 1, characterized in that: The charge transfer device (200) further includes a third charge transfer component (230), and the first end of the first charge transfer component (210) is connected to the heater (110) via the third charge transfer component (230); The third charge transfer component (230) includes a fifth charge transfer element (231) and a sixth charge transfer element (232), and the fifth charge transfer element (231) and the sixth charge transfer element (232) are connected in parallel.

3. The carrying device according to claim 2, characterized in that: The impedance value of the fifth charge transfer element (231) is a fifth impedance value, the impedance value of the first charge transfer element (211) is a first impedance value, and the impedance value of the second charge transfer element (212) is a second impedance value, The first impedance value and the second impedance value are both unequal to the fifth impedance value.

4. The carrying device according to claim 3, characterized in that: The impedance value of the sixth charge transfer element (232) is a sixth impedance value, the sixth impedance value is not equal to the fifth impedance value, and the first impedance value is not equal to the second impedance value.

5. The carrying device according to claim 1, characterized in that: The detection component (300) comprises a detection device (310) and a fault judgment device (320), the detection device (310) having a detection end and an output end, the detection end being connected to the charge transfer device (200), the output end being connected to the fault judgment device (320), and the detection device (310) being used to detect a voltage or a current at a connection point between the first charge transfer component (210) and the second charge transfer component (220); The fault judgment device (320) monitors and diagnoses faults of the fault judgment device (320) based on the detection information of the detection device (310).

6. The carrying device according to claim 1, characterized in that: The carrying device further comprises an alarm, which is connected to the detection component (300). When the detection component (300) diagnoses a fault in the charge transfer device (200), the alarm sounds an alarm.

7. The carrying device according to claim 6, characterized in that: The carrier device further comprises a switch (400), wherein the switch (400) is connected to the heater (110) and the charge transfer device (200), respectively. When the switch (400) is closed, the residual charge on the heater (110) can be transferred from the charge transfer device (200) to the preset reference voltage terminal.

8. The carrying device according to claim 7, characterized in that: The carrying device further comprises an inductive filtering device (700); A first end of the inductive filter device (700) is connected to the heater (110), and a second end of the inductive filter device (700) is connected to an AC power source; The switch (400) is connected between the second end of the inductive filter device (700) and the AC power supply.

9. A semiconductor process equipment, characterized in that: The semiconductor process equipment comprises the carrier device according to any one of claims 1 to 8, and further comprises a process chamber, wherein the carrier device is arranged in the process chamber.

10. A method for controlling semiconductor process equipment, characterized in that: The semiconductor process equipment includes the carrier device according to claim 7 or 8, The control method includes: closing the switch; The detection component monitors and diagnoses faults of the charge transfer device.

11. The control method according to claim 10, characterized in that: When the detection component diagnoses that the charge transfer device has no fault, the control method further includes: The charge transfer device transfers the residual charge on the heater to the preset reference voltage terminal.

12. The control method according to claim 10, characterized in that: In the case where the detection component diagnoses that the charge transfer device has an open circuit fault, the control method further includes: The alarm device sends out a circuit breaker alarm signal; The charge transfer device transfers the residual charge on the heater to the preset reference voltage terminal.

13. The control method according to claim 10, characterized in that: In the case where the detection component diagnoses a short circuit fault in the charge transfer device, the control method further includes: The alarm device sends a short circuit alarm signal; disconnecting the switch; The electrode assembly applies an adsorption voltage to fix the wafer to the carrier; Processing the wafer fixed on the carrier.

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