Sheet for manufacturing semiconductor device and method for manufacturing the same, and method for manufacturing semiconductor chip with film-like adhesive

Abstract

The present invention provides a sheet for manufacturing a semiconductor device, comprising a label portion attached to a semiconductor wafer or a semiconductor chip and a peripheral portion arranged on at least a portion closer to the outside than the label portion, the label portion and the peripheral portion comprising a substrate, an adhesive layer, an intermediate layer and a film-like adhesive, the sheet for manufacturing a semiconductor device being formed by sequentially stacking the adhesive layer, the intermediate layer, the film-like adhesive and a release film on the substrate, a groove on which the intermediate layer and the film-like adhesive are not stacked being provided between the label portion and the peripheral portion, the intermediate layer containing a non-silicone resin having a weight-average molecular weight of less than 100,000 as a main component.

Description

Technical Field

[0001] The present invention relates to a sheet for manufacturing a semiconductor device, a method for manufacturing the sheet for manufacturing a semiconductor device, and a method for manufacturing a semiconductor chip with a film-like adhesive.

[0002] This application claims priority based on Japanese Patent Application No. 2020-058734 filed in Japan on March 27, 2020, the contents of which are incorporated herein by reference. Background Art

[0003] When manufacturing a semiconductor device, a semiconductor chip with a film-like adhesive is used, which includes a semiconductor chip and a film-like adhesive provided on the back surface of the semiconductor chip.

[0004] As an example of a method for producing a semiconductor chip with a film-like adhesive, the following method can be mentioned.

[0005] First, a dicing die bonding sheet is attached to the back side of the semiconductor wafer.

[0006] As a cutting solid wafer, for example, there can be cited a cutting solid wafer having a support sheet and a film-like adhesive arranged on the surface of the support sheet. The support sheet can be used as a cutting sheet. As a support sheet, there are a variety of support sheets with different structures, such as a support sheet having a substrate and an adhesive layer arranged on the surface of the substrate; a support sheet consisting only of a substrate, etc. For a support sheet having an adhesive layer, the outermost surface on the adhesive layer side is the surface on which the film-like adhesive is arranged. The cutting solid wafer is attached to the back side of the semiconductor wafer through the film-like adhesive therein.

[0007] Next, the semiconductor wafer on the support sheet is cut together with the film adhesive by blade cutting. The "cutting" of the semiconductor wafer is also called "division", whereby the semiconductor wafer is singulated into target semiconductor chips. The film adhesive is cut along the periphery of the semiconductor chip. Thus, a semiconductor chip with a film adhesive having a semiconductor chip and a cut film adhesive arranged on the back of the semiconductor chip can be obtained, and at the same time, a semiconductor chip group with a film adhesive in which a plurality of these semiconductor chips with a film adhesive are maintained on the support sheet in a neatly arranged state can be obtained.

[0008] Then, the semiconductor chip with the film-like adhesive is pulled off from the support sheet to be picked up. When a support sheet having a curable adhesive layer is used, the adhesive layer is cured in advance to reduce the adhesiveness, which makes it easier to pick up.

[0009] Thereby, a semiconductor chip with a film-like adhesive for use in manufacturing a semiconductor device can be obtained.

[0010] As another example of the method for producing a semiconductor chip with a film-like adhesive, the following method can be cited.

[0011] First, a back grinding tape (sometimes also referred to as a "surface protection tape") is attached to the circuit formation surface of the semiconductor wafer.

[0012] Then, a predetermined division position is set inside the semiconductor wafer, the area contained in the position is used as the focus, and the laser is irradiated in a manner that the laser is focused on the focus, thereby forming a modified layer inside the semiconductor wafer. Then, a grinder is used to grind the back of the semiconductor wafer to adjust the thickness of the semiconductor wafer to a target value. By utilizing the force applied to the semiconductor wafer during grinding at this time, the semiconductor wafer is divided (singulated) at the position where the modified layer is formed to produce a plurality of semiconductor chips. This method of dividing a semiconductor wafer accompanied by the formation of a modified layer is called Stealth Dicing (registered trademark), which is completely different in nature from laser cutting in which the semiconductor wafer is cut from the surface of the semiconductor wafer while the semiconductor wafer is cut from the irradiated position by irradiating the semiconductor wafer with a laser.

[0013] Then, a solid wafer is attached to the back side (in other words, the grinding side) of all the semiconductor chips fixed on the back grinding tape that have been ground. As the solid wafer, the same sheet as the above-mentioned cutting solid wafer can be cited. As mentioned above, the solid wafer can sometimes be designed to have the same structure as the cutting solid wafer, but it will not be used when cutting semiconductor wafers. The solid wafer can also be attached to the back side of the semiconductor chip by a film-like adhesive in the solid wafer.

[0014] Next, after removing the back grinding tape from the semiconductor chip, the solid wafer is stretched in a direction parallel to its surface (e.g., the surface where the film adhesive is attached to the semiconductor chip) while being cooled, thereby performing so-called expansion (cold expansion), thereby cutting the film adhesive along the periphery of the semiconductor chip.

[0015] Thereby, a semiconductor chip with a film-like adhesive including a semiconductor chip and the cut film-like adhesive provided on the back surface of the semiconductor chip can be obtained.

[0016] Next, in the same manner as in the case of dicing using a blade, the semiconductor chip with the film-like adhesive is pulled off from the support sheet to be picked up, thereby obtaining a semiconductor chip with the film-like adhesive for use in manufacturing a semiconductor device.

[0017] Both the dicing wafer and the bonding wafer can be used to manufacture semiconductor chips with a film-like adhesive, and finally a target semiconductor device can be manufactured. In this specification, the dicing wafer and the bonding wafer are collectively referred to as a "sheet for semiconductor device manufacturing."

[0018] As a sheet for manufacturing semiconductor devices, for example, a dicing bonding tape (equivalent to the dicing bonding sheet) is disclosed, which has a structure in which a base layer (equivalent to the support sheet) and an adhesive layer (equivalent to the film-like adhesive) are stacked in direct contact (refer to patent document 1). For this dicing bonding tape, since the 90-degree peeling force of the base layer and the adhesive layer at -15°C is adjusted to a specific range, the adhesive layer can be separated with good accuracy by expansion. In addition, since the 90-degree peeling force of the base layer and the adhesive layer at 23°C is adjusted to a specific range, when using the dicing bonding tape, the semiconductor chip with the adhesive layer (equivalent to the semiconductor chip with the film-like adhesive) can be picked up without difficulty, and the semiconductor wafer and the semiconductor chip can be prevented from peeling off from the adhesive layer during the process until picking up.

[0019] In addition, a solid wafer or the like may be provided in a form of being continuously bonded to a long release film and then wound into a roll.

[0020] Prior art literature

[0021] Patent Literature

[0022] Patent document 1: Japanese Patent Application Publication No. 2018-56289. Summary of the invention

[0023] Technical Problems to be Solved by the Invention

[0024] However, although the dicing bonding tape disclosed in Patent Document 1 is suitable for Stealth Dicing (registered trademark), it is not suitable for blade dicing. If the dicing bonding tape is used for blade dicing, whisker-like cutting chips (sometimes also referred to as "whiskers" in this field) from the substrate layer are easily generated, and the dicing suitability when dicing the semiconductor wafer is poor.

[0025] In addition, the adhesive layer (equivalent to the film-like adhesive) is sometimes punched in advance according to the shape of the semiconductor wafer, etc., which is the object of use. In addition, the base layer (equivalent to the intermediate layer) can also be punched in the same way. The excess part after the punching process (the peripheral part not attached to the semiconductor wafer, etc.) is removed, so the parts formed by these punching processes are stacked higher than the surrounding parts. However, there is the following problem at this time: the step difference caused by the difference in the thickness of each stacked part is easy to cause the positions of each step difference to be staggered and overlapped when the semiconductor device manufacturing sheet is provided in a rolled form, thereby producing a winding mark (sometimes referred to as a "rolling mark").

[0026] An object of the present invention is to provide a sheet for manufacturing a semiconductor device which has excellent suitability for dividing a semiconductor wafer and can suppress the generation of a winding mark.

[0027] Technical means to solve technical problems

[0028] (1) A sheet for manufacturing a semiconductor device, comprising a label portion including a portion to be attached to a semiconductor wafer or a semiconductor chip, and an outer peripheral portion provided at least in a portion outside the label portion,

[0029] The label portion and the peripheral portion include a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive, and the semiconductor device manufacturing sheet is formed by sequentially stacking the adhesive layer, the intermediate layer, the film-like adhesive, and a release film on the substrate.

[0030] A groove where the intermediate layer and the film-like adhesive are not laminated is provided between the label portion and the outer peripheral portion.

[0031] The intermediate layer contains a non-silicone resin having a weight average molecular weight of 100,000 or less as a main component.

[0032] (2) The sheet for manufacturing a semiconductor device according to (1) above, wherein a difference between a maximum value of the thickness of the sheet for manufacturing a semiconductor device in the label portion and a maximum value of the thickness of the sheet for manufacturing a semiconductor device in the peripheral portion is 3 μm or less.

[0033] (3) A sheet for manufacturing a semiconductor device according to (1) or (2) above, wherein the maximum width of the film adhesive of the label portion in a direction parallel to the attachment surface to the semiconductor wafer or semiconductor chip is 150 to 160 mm, 200 to 210 mm or 300 to 310 mm.

[0034] (4) The sheet for manufacturing a semiconductor device according to any one of (1) to (3) above, wherein the thickness of the intermediate layer in the label portion is 15 μm to 80 μm.

[0035] (5) The sheet for manufacturing a semiconductor device according to any one of (1) to (4) above, wherein the content of the non-silicone resin in the intermediate layer is 50% by mass or more relative to the total mass of the intermediate layer.

[0036] (6) A sheet for manufacturing a semiconductor device according to any one of (1) to (5) above, wherein when the surface of the film-like adhesive side of the intermediate layer is analyzed by X-ray photoelectron spectroscopy, the ratio of the concentration of silicon to the total concentration of carbon, oxygen, nitrogen and silicon is 1 to 20%.

[0037] (7) The sheet for manufacturing a semiconductor device according to any one of (1) to (6) above, wherein the non-silicone resin contains an ethylene-vinyl acetate copolymer.

[0038] (8) The sheet for manufacturing a semiconductor device according to any one of (1) to (7) above, wherein the intermediate layer contains an ethylene vinyl acetate copolymer and a siloxane compound as the non-silicone resin,

[0039] In the intermediate layer, the content of the ethylene vinyl acetate copolymer is 90 to 99.99% by mass relative to the total mass of the intermediate layer.

[0040] In the intermediate layer, the content of the siloxane compound is 0.01 to 10% by mass relative to the total mass of the intermediate layer.

[0041] (9) A sheet for manufacturing a semiconductor device according to any one of (1) to (8) above, which is used to cut off the cold expansion of the film-like adhesive by expanding the sheet for manufacturing a semiconductor device at a temperature lower than room temperature in a direction parallel to the plane of the sheet for manufacturing a semiconductor device.

[0042] (10) A sheet for manufacturing a semiconductor device according to any one of (1) to (9) above, wherein the sheet for manufacturing a semiconductor device is a roll body having the label portion and the peripheral portion on the long strip of the peeling film, and is wound with the label portion and the peripheral portion as the inner side.

[0043] (11) A method for producing a sheet for producing a semiconductor device according to any one of (1) to (10), comprising: a lamination step of laminating a first intermediate layer stack having the substrate and the adhesive layer and a second intermediate layer stack having the intermediate layer and the film-like adhesive; and

[0044] A processing step of removing a portion of the film-like adhesive of the second intermediate laminate by punching out the film-like adhesive to form the label portion, the groove, and the outer peripheral portion.

[0045] (12) A method for manufacturing a semiconductor chip with a film-like adhesive, comprising:

[0046] A step of laminating a semiconductor wafer or a semiconductor chip on one side of the film-like adhesive of the sheet for manufacturing a semiconductor device according to any one of (1) to (10) above to obtain a laminated body; and

[0047] A step of cutting the film-like adhesive or the semiconductor wafer and the film-like adhesive along the outer periphery of the semiconductor chip to obtain a semiconductor chip with the film-like adhesive.

[0048] Effects of the Invention

[0049] According to the present aspect, it is possible to provide a sheet for manufacturing a semiconductor device which is excellent in the suitability for dividing a semiconductor wafer and can suppress the generation of a winding mark. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] Figure 1 This is a cross-sectional view schematically showing a sheet for manufacturing a semiconductor device according to one embodiment of the present invention.

[0051] Figure 2 This is a top view of a sheet for manufacturing a semiconductor device according to one embodiment of the present invention.

[0052] Figure 3A This is a schematic diagram showing an example of a method for producing a sheet for producing a semiconductor device according to an embodiment of the present invention.

[0053] Figure 3B This is a schematic diagram showing an example of a method for producing a sheet for producing a semiconductor device according to an embodiment of the present invention.

[0054] Figure 3C This is a schematic diagram showing an example of a method for producing a sheet for producing a semiconductor device according to an embodiment of the present invention.

[0055] Figure 3D This is a schematic diagram showing an example of a method for producing a sheet for producing a semiconductor device according to an embodiment of the present invention.

[0056] Figure 4 This is a cross-sectional view schematically showing a roll of a sheet for manufacturing a semiconductor device according to one embodiment of the present invention.

[0057] Figure 5A This is a cross-sectional view for schematically illustrating an example of a method of using a sheet for manufacturing a semiconductor device according to an embodiment of the present invention.

[0058] Figure 5B This is a cross-sectional view for schematically illustrating an example of a method of using a sheet for manufacturing a semiconductor device according to an embodiment of the present invention.

[0059] Figure 5C This is a cross-sectional view for schematically illustrating an example of a method of using a sheet for manufacturing a semiconductor device according to an embodiment of the present invention.

[0060] Fig. 6A This is a cross-sectional view for schematically illustrating an example of a method for manufacturing a semiconductor chip.

[0061] Figure 6B This is a cross-sectional view for schematically illustrating an example of a method for manufacturing a semiconductor chip.

[0062] Figure 6C This is a cross-sectional view for schematically illustrating an example of a method for manufacturing a semiconductor chip.

[0063] Fig. 7A This is a cross-sectional view for schematically illustrating another example of a method of using the sheet for manufacturing a semiconductor device according to one embodiment of the present invention.

[0064] Figure 7B This is a cross-sectional view for schematically illustrating another example of a method of using the sheet for manufacturing a semiconductor device according to one embodiment of the present invention.

[0065] Figure 7C This is a cross-sectional view for schematically illustrating another example of a method of using the sheet for manufacturing a semiconductor device according to one embodiment of the present invention. DETAILED DESCRIPTION

[0066] ◇Sheets for semiconductor device manufacturing

[0067] A sheet for manufacturing a semiconductor device according to one embodiment of the present invention comprises a label portion including a portion attached to a semiconductor wafer or a semiconductor chip and a peripheral portion arranged on at least a portion closer to the outside than the label portion, the label portion and the peripheral portion comprising a substrate, an adhesive layer, an intermediate layer and a film-like adhesive, the sheet for manufacturing a semiconductor device being formed by sequentially stacking the adhesive layer, the intermediate layer, the film-like adhesive and a release film on the substrate, a groove on which the intermediate layer and the film-like adhesive are not stacked being provided between the label portion and the peripheral portion, the intermediate layer containing a non-silicone resin having a weight-average molecular weight of less than 100,000 as a main component.

[0068] Since the sheet for manufacturing a semiconductor device according to the present embodiment includes the outer peripheral portion, even when the sheet for manufacturing a semiconductor device is wound into a roll shape and provided as a roll body, the generation of winding marks can be suppressed.

[0069] In the previous semiconductor device manufacturing sheet, although there is a structure at a position closer to the outside than the label portion, the structure is a structure composed only of a substrate and an adhesive layer. However, since the semiconductor device manufacturing sheet of this embodiment has a peripheral portion having the same layer structure as the label portion, even if the label portion formed by punching is stacked higher than the surrounding portion (groove), the step difference caused by the difference in the total thickness of the label portion and the groove is unlikely to affect the overlapping portion due to winding, and the generation of winding marks can be suppressed. The winding marks can be confirmed by unwinding the roll and observing the overlapping portion of the step difference in the film adhesive, etc. with the naked eye. The confirmation of the winding marks is preferably performed near the core of the roll where the winding marks are easily generated.

[0070] Regarding the position of the outer peripheral portion, “outer than the label portion” means a position in a direction parallel to the surface of the film-like adhesive of the label portion.

[0071] Regarding the position of the groove described above, "between the label portion and the outer peripheral portion" refers to a position in a direction parallel to the surface of the film-like adhesive of the label portion.

[0072] Since the semiconductor device manufacturing sheet has the intermediate layer, when the semiconductor device manufacturing sheet of this embodiment is used as a cutting solid wafer and is cut with a blade, it is easy to avoid the blade from reaching the substrate, and the generation of whisker-like cutting chips (also known as whiskers, hereinafter, not limited to cutting chips from the substrate, and simply referred to as "cutting chips") from the substrate can be suppressed. In addition, by making the main component of the intermediate layer cut by the blade a non-silicone resin with a weight average molecular weight of less than 100,000, especially by making the weight average molecular weight less than 100,000, the generation of the cutting chips from the intermediate layer can also be suppressed.

[0073] Since the semiconductor device manufacturing sheet of the present embodiment has the intermediate layer, when the semiconductor device manufacturing sheet of the present embodiment is used as a solid wafer and dicing (Stealth Dicing (registered trademark)) is performed with the formation of a modified layer in the semiconductor wafer, the semiconductor device manufacturing sheet can be stretched in a direction parallel to its surface (for example, the attachment surface of the film adhesive to the semiconductor chip), i.e., so-called expansion is performed, and the film adhesive can be cut with good accuracy at the target position, and poor cutting can be suppressed. It is believed that this is because the intermediate layer can effectively utilize the expanded stress to expand the chip spacing.

[0074] In this way, the semiconductor device manufacturing sheet of this embodiment can suppress the generation of cutting chips from the substrate and the intermediate layer when blade cutting is performed, and can suppress the poor cutting of the film adhesive when the above-mentioned expansion is performed. It has the characteristic of suppressing the occurrence of adverse situations when splitting semiconductor wafers, and has excellent suitability for splitting semiconductor wafers.

[0075] In this specification, unless otherwise specified, the "weight average molecular weight" means a polystyrene-equivalent value measured by gel permeation chromatography (GPC).

[0076] The method of using the semiconductor device manufacturing sheet according to this embodiment will be described in detail later.

[0077] Hereinafter, the semiconductor device manufacturing sheet of the present embodiment will be described in detail with reference to the accompanying drawings. In addition, in order to facilitate understanding of the features of the embodiment, for convenience, important parts of the figures used in the following description may be enlarged and displayed, and the size ratios of the various components may not be the same as the actual ones.

[0078] Figure 1 This is a cross-sectional view schematically showing a semiconductor device manufacturing sheet according to one embodiment of the present invention. Figure 2 for Figure 1 A top view of a wafer for manufacturing a semiconductor device is shown. Figure 1 yes Figure 2 A-A' cross-section diagram.

[0079] In addition, Figure 2 In the subsequent drawings, the same components as those shown in the drawings that have already been described are denoted by the same reference numerals as those in the drawings that have already been described, and detailed description thereof will be omitted.

[0080] The semiconductor device manufacturing sheet 101 shown here includes a label portion 30 including a portion to be attached to a semiconductor wafer or a semiconductor chip, and an outer peripheral portion 32 provided at least in a portion outside the label portion.

[0081] The label portion 30 and the peripheral portion 32 include a substrate 11, an adhesive layer 12, an intermediate layer 13, and a film-like adhesive 14. The adhesive layer 12, the intermediate layer 13, the film-like adhesive 14, and the release film 15 are sequentially laminated on the substrate 11.

[0082] That is, the regions of the label portion 30 and the outer peripheral portion 32 are portions of the semiconductor device manufacturing sheet 101 where the base material 11 , the pressure-sensitive adhesive layer 12 , the intermediate layer 13 , and the film-like adhesive 14 are stacked in the thickness direction.

[0083] The thickness and composition of the common layers of the label portion 30 and the outer peripheral portion 32 may be the same or different. From the perspective of reducing the influence of the step caused by the difference in the total thickness of the label portion 30 and the groove 34 and effectively suppressing the generation of winding marks, the thickness and composition of the substrate 11, the adhesive layer 12, the intermediate layer 13 and the film-like adhesive 14 in the label portion 30 and the outer peripheral portion 32 are preferably the same.

[0084] The label portion 30 preferably has a shape and size such that the semiconductor wafer or semiconductor chip does not protrude from the label portion when the semiconductor wafer or semiconductor chip is attached. It is preferred that the outer peripheral position of the top view shape of the semiconductor wafer or semiconductor chip attached to the label portion is located closer to the inside than the outer peripheral position of the top view shape of the film adhesive of the label portion. Regarding this size, the preferred values ​​of the width of the intermediate layer and the film adhesive constituting the label portion are described below.

[0085] A groove 34 where the intermediate layer 13 and the film adhesive 14 are not laminated is provided between the label portion 30 and the peripheral portion 32. However, the release film 15 is laminated across the label portion 30, the peripheral portion 32, and the groove 34 portion, and serves to connect the label portion 30 and the peripheral portion 32. Since the intermediate layer 13 and the film adhesive 14 are not laminated on the groove 34, the total thickness of the semiconductor device manufacturing sheet 101 in the groove 34 portion is thinner than the total thickness of the semiconductor device manufacturing sheet 101 in the label portion 30 and the peripheral portion 32 portion. Since the groove 34 is formed around the label portion 30, the manufacture of the semiconductor chip with the film adhesive, including attaching a semiconductor wafer or a semiconductor chip to the label portion, becomes easy.

[0086] As described above, from the perspective of reducing the effect of the step caused by the difference in the total thickness of the label portion 30 and the groove 34 by the peripheral portion 32 and effectively suppressing the occurrence of winding marks, it is preferable to make the difference between the thickness of the label portion and the thickness of the peripheral portion small.

[0087] The thickness H of the semiconductor device manufacturing sheet 101 of the label portion 30 is 30 The maximum value of is related to the thickness H of the semiconductor device manufacturing sheet 101 at the outer peripheral portion 32 32 The maximum value difference of is preferably 3 μm or less, more preferably 2 μm or less, and further preferably 1 μm or less. Figure 1 Middle, H 30 With H 32 The thickness value is the same.

[0088] Likewise, from the viewpoint of effectively suppressing the occurrence of winding marks, it is preferable to reduce the width of the groove 34 between the label portion 30 and the outer peripheral portion 32 .

[0089] The width W of the groove 34 34 The minimum value of is preferably 50 mm or less, more preferably 0.5 to 50 mm, and further preferably 1 to 40 mm. The minimum value of the groove width is the length of a straight line connecting any point on the contour line of the label portion and any point on the contour line of the peripheral portion at the shortest distance.

[0090] In the label portion 30 and the peripheral portion 32 of the sheet 101 for manufacturing a semiconductor device, an adhesive layer 12 is provided on one surface (sometimes referred to as the "first surface" in this specification) 11a of the substrate 11. An intermediate layer 13 is provided on the surface (sometimes referred to as the "first surface" in this specification) 12a of the adhesive layer 12 opposite to the side on which the substrate 11 is provided. A film-like adhesive 14 is provided on the surface (sometimes referred to as the "first surface" in this specification) 13a of the intermediate layer 13 opposite to the side on which the adhesive layer 12 is provided. A release film 15 is provided on the first surface 14a of the film-like adhesive 14. In this way, the sheet 101 for manufacturing a semiconductor device is constructed by stacking the substrate 11, the adhesive layer 12, the intermediate layer 13, the film-like adhesive 14, and the release film 15 in this order in their thickness direction.

[0091] The semiconductor device manufacturing sheet 101 is used in the following manner: with the release film 15 removed, the first surface 14a of the film-like adhesive 14 of at least a portion of the label portion 30 in the semiconductor device manufacturing sheet 101 is attached to the back side of a semiconductor wafer, a semiconductor chip, or a semiconductor wafer that has not been completely divided (not shown).

[0092] In this specification, in either the semiconductor wafer or the semiconductor chip, the surface on which the circuit is formed is referred to as the "circuit formation surface", and the surface opposite to the circuit formation surface is referred to as the "back surface".

[0093] In this specification, a laminate having a structure in which a substrate and an adhesive layer are laminated in their thickness direction without an intermediate layer is sometimes referred to as a "support sheet". Figure 1 , reference numeral 1 is marked to denote a supporting sheet.

[0094] In addition, a laminate having a structure in which a base material, an adhesive layer, and an intermediate layer are laminated in this order in their thickness direction is referred to as a "laminated sheet". Figure 1 The laminated sheet is indicated by reference numeral 10. A laminate of the support sheet and the intermediate layer is included in the laminated sheet.

[0095] When looking down at the intermediate layer 13 and the film-like adhesive 14 of the label part 30 from above, the planar shapes of the intermediate layer 13 and the film-like adhesive 14 of the label part 30 are both circular, and the diameter of the intermediate layer 13 is the same as the diameter of the film-like adhesive 14.

[0096] In the label portion 30 of the semiconductor device manufacturing sheet 101, the intermediate layer 13 and the film-like adhesive 14 are arranged so that their centers are aligned, in other words, so that their peripheries are aligned in their radial directions.

[0097] The first surface 13a of the intermediate layer 13 and the first surface 14a of the film-like adhesive 14 of the label portion 30 are both smaller in area than the first surface 12a of the adhesive layer 12. 13 The maximum value (ie, diameter) of the film adhesive 14 is related to the width W 14 The maximum values ​​(i.e., diameters) of the adhesive layer 12 are smaller than the maximum values ​​of the width of the adhesive layer 12 and the maximum values ​​of the width of the substrate 11. Therefore, in the semiconductor device manufacturing sheet 101, a portion of the first surface 12a of the adhesive layer 12 is not covered by the intermediate layer 13 and the film-like adhesive 14. The release film 15 is in direct contact with and laminated on the region of the first surface 12a of the adhesive layer 12 where the intermediate layer 13 and the film-like adhesive 14 are not laminated, and the region is exposed when the release film 15 is removed (hereinafter, in this specification, the region is sometimes referred to as a "non-laminated region").

[0098] In the semiconductor device manufacturing sheet 101 having the release film 15 , there may be a region where the release film 15 is not laminated on the region of the adhesive layer 12 not covered by the intermediate layer 13 and the film adhesive 14 as shown here, or there may be no region where the release film 15 is not laminated.

[0099] The semiconductor device manufacturing sheet 101 in a state where the film adhesive 14 is not cut and is attached to the semiconductor wafer or semiconductor chip by the film adhesive 14 can be fixed by attaching a part of the non-laminated area in the adhesive layer 12 therein to a jig such as a ring frame for fixing the semiconductor wafer. Therefore, it is not necessary to separately provide a jig adhesive layer on the semiconductor device manufacturing sheet 101 for fixing the semiconductor device manufacturing sheet 101 to the jig. In addition, since it is not necessary to provide a jig adhesive layer, the semiconductor device manufacturing sheet 101 can be manufactured efficiently at low cost.

[0100] Although the semiconductor device manufacturing sheet 101 achieves a beneficial effect by not having a jig adhesive layer as described above, it may also have a jig adhesive layer. In this case, the jig adhesive layer is provided in an area near the peripheral edge of the surface of any layer constituting the semiconductor device manufacturing sheet 101. As such an area, the non-laminated area on the first surface 12a of the adhesive layer 12 can be cited.

[0101] The jig adhesive layer may be a known jig adhesive layer, for example, a single layer structure containing an adhesive component, or a multilayer structure in which layers containing an adhesive component are laminated on both surfaces of a sheet as a core material.

[0102] Furthermore, when the semiconductor device manufacturing sheet 101 is stretched in a direction parallel to its surface (e.g., the first surface 12a of the adhesive layer 12) in the manner described below, i.e., so-called expansion is performed, the semiconductor device manufacturing sheet 101 can be easily expanded due to the presence of the non-laminated region on the first surface 12a of the adhesive layer 12. Furthermore, not only can the film-like adhesive 14 be easily cut, but the intermediate layer 13 and the film-like adhesive 14 can also be prevented from peeling off from the adhesive layer 12.

[0103] The areas of the first surface 12a of the adhesive layer 12 and the first surface 11a of the substrate 11 of the support sheet 1 of the label portion 30 are both smaller than the area of ​​the first surface 15a of the release film 15. In addition, the maximum value (i.e., diameter) of the width of the adhesive layer 12 and the maximum value (i.e., diameter) of the substrate 11 are both smaller than the maximum value of the width of the release film 15. Therefore, in the semiconductor device manufacturing sheet 101, a portion of the release film 15 is not covered by the adhesive layer 12 and the substrate 11.

[0104] When looking down at the adhesive layer 12 and the substrate 11 of the label portion 30 from above, the planar shapes of the adhesive layer 12 and the substrate 11 are both circular, and the diameters of the adhesive layer 12 and the substrate 11 are the same.

[0105] In the label portion 30 of the semiconductor device manufacturing sheet 101 , the adhesive layer 12 and the base 11 are arranged so that their centers coincide with each other, in other words, so that their peripheral positions coincide with each other in their radial directions.

[0106] Figure 2 yes Figure 1 The semiconductor device manufacturing sheet 101 includes a label portion 30 and a peripheral portion 32 provided at least partially outside the label portion 30. The circular support sheet 1 and the circular intermediate layer 13 and film adhesive 14 constituting the label portion 30 are stacked in a concentric manner.

[0107] A groove 34 is formed around the label portion 30. The groove 34 includes a portion where the release film 15 and the support sheet 1 are laminated and a portion where the support sheet 1 is not laminated and the release film 15 is exposed.

[0108] In the semiconductor device manufacturing sheet 101 , the intermediate layer 13 contains a non-silicone resin having a weight average molecular weight of 100,000 or less as a main component.

[0109] The semiconductor device manufacturing sheet of the present embodiment is not limited to Figure 1 and Figure 2 The semiconductor device manufacturing sheet shown in the figure can be used in the range not impairing the effect of the present invention. Figure 1 and Figure 2 Part of the configuration of the semiconductor device manufacturing sheet shown is changed, deleted, or added.

[0110] For example, the semiconductor device manufacturing sheet of the present embodiment may also include other layers that are not included in any of the substrate, adhesive layer, intermediate layer, film adhesive, release film, and clamp adhesive layer. However, the semiconductor device manufacturing sheet of the present embodiment is preferably as follows: Figure 1 As shown, the adhesive layer is provided in a state where the adhesive layer is in direct contact with the substrate, the intermediate layer is provided in a state where the adhesive layer is in direct contact with the intermediate layer, the film adhesive is provided in a state where the film adhesive is in direct contact with the intermediate layer, and the release film is provided in a state where the release film is in direct contact with the film adhesive.

[0111] For example, in the semiconductor device manufacturing sheet of the present embodiment, the plane shape of the intermediate layer and the film-like adhesive of the label portion can be a shape other than a circle, and the plane shapes of the intermediate layer and the film-like adhesive can be the same as each other or different from each other. In addition, it is preferred that the area of ​​the first surface of the intermediate layer in the label portion and the area of ​​the first surface of the film-like adhesive are both smaller than the area of ​​the surface of the layer closer to the substrate side (for example, the first surface of the adhesive layer), and the area of ​​the first surface of the intermediate layer and the area of ​​the first surface of the film-like adhesive can be the same as each other or different from each other. In addition, the positions of the peripheries of the intermediate layer and the film-like adhesive can be consistent in their radial directions or inconsistent.

[0112] Preferably, the outer periphery of the top view shape of the intermediate layer and the outer periphery of the top view shape of the film-like adhesive are both closer to the inner side than the outer periphery of the top view shape of at least one surface of the layer closer to the substrate side than the intermediate layer and the film-like adhesive. For example, preferably, the outer periphery of the top view shape of the intermediate layer and the outer periphery of the top view shape of the film-like adhesive are both closer to the inner side than the outer periphery of the top view shape of the supporting sheet.

[0113] Next, each layer constituting the sheet for manufacturing a semiconductor device according to the present embodiment will be described in more detail.

[0114] ○Base material

[0115] The substrate is in sheet or film form.

[0116] The constituent material of the substrate is preferably various resins, and specific examples thereof include polyethylene (low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), high-density polyethylene (HDPE), etc.), polypropylene (PP), polybutene, polybutadiene, polymethylpentene, styrene-ethylene butylene-styrene block copolymer, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyurethane, polyurethane acrylate, polyimide (PI), ionomer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid ester copolymer, ethylene copolymers other than ethylene-(meth)acrylic acid copolymer and ethylene-(meth)acrylic acid ester copolymer, polystyrene, polycarbonate, fluororesin, hydrogenated products, modified products, crosslinked products or copolymers of any of the above resins, etc.

[0117] In addition, in this specification, "(meth)acrylic acid" is a concept including both "acrylic acid" and "methacrylic acid". The same applies to terms similar to (meth)acrylic acid, for example, "(meth)acrylate" is a concept including "acrylate" and "methacrylate", and "(meth)acryloyl" is a concept including "acryloyl" and "methacryloyl".

[0118] The resin constituting the substrate may be one type or two or more types. When two or more types are used, the combination and ratio of the resins may be arbitrarily selected.

[0119] The substrate may be composed of one layer (single layer) or more than two layers. When the substrate is composed of multiple layers, these multiple layers may be the same as or different from each other, and the combination of these multiple layers is not particularly limited as long as the effect of the present invention is not impaired.

[0120] In this specification, not limited to the substrate, "multiple layers may be the same as or different from each other" means "all layers may be the same, all layers may be different, or only some layers may be the same", and further, "multiple layers are different from each other" means "at least one of the constituent materials and thicknesses of each layer is different from each other".

[0121] The thickness of the substrate can be appropriately selected according to the purpose, preferably 50 to 300 μm, more preferably 60 to 150 μm. By making the thickness of the substrate above the lower limit, the structure of the substrate is more stable. By making the thickness of the substrate below the upper limit, the film adhesive can be cut more easily during blade cutting and the expansion of the semiconductor device manufacturing sheet.

[0122] Here, the “thickness of the substrate” refers to the thickness of the entire substrate. For example, the thickness of a substrate composed of a plurality of layers refers to the total thickness of all the layers constituting the substrate.

[0123] In this specification, unless otherwise specified, "thickness" is an average value of thicknesses measured at five randomly selected positions, which can be measured using a constant pressure thickness gauge in accordance with JIS K7130.

[0124] In order to improve the adhesion between the substrate and other layers such as the adhesive layer arranged thereon, the surface of the substrate can be subjected to a roughening treatment based on sandblasting, solvent treatment, embossing treatment, etc.; an oxidation treatment such as corona discharge treatment, electron beam irradiation treatment, plasma treatment, ozone / ultraviolet irradiation treatment, flame treatment, chromic acid treatment, hot air treatment, etc.

[0125] In addition, the surface of the substrate may be subjected to a primer treatment.

[0126] In addition, the substrate may also have an antistatic coating, a layer for preventing the substrate from adhering to other sheets or to a suction table when the solid wafers are stacked and stored, and the like.

[0127] The substrate may contain various known additives such as a filler, a colorant, an antistatic agent, an antioxidant, an organic lubricant, a catalyst, a softener (plasticizer), etc. in addition to the above-mentioned main constituent materials such as the resin.

[0128] The optical properties of the substrate are not particularly limited as long as the effects of the present invention are not impaired. The substrate may be, for example, a substrate that transmits laser light or energy rays.

[0129] The substrate can be produced by a known method. For example, a substrate containing a resin (having a resin as a constituent material) can be produced by molding the resin or a resin composition containing the resin.

[0130] ○Adhesive layer

[0131] The adhesive layer is in a sheet or film shape and contains an adhesive.

[0132] The adhesive layer can be formed using an adhesive composition containing the adhesive. For example, the adhesive composition is applied to the surface of the object on which the adhesive layer is to be formed, and dried as needed, thereby forming the adhesive layer at the target site.

[0133] The adhesive composition can be applied by a known method, for example, methods using various coaters such as an air knife coater, a blade coater, a rod coater, a gravure coater, a roll coater, a roll knife coater, a curtain coater, a die coater, a knife coater, a screen coater, a Meyer rod coater, and a kiss coater.

[0134] The drying conditions of the adhesive composition are not particularly limited. However, when the adhesive composition contains a solvent described below, it is preferably dried by heating. In this case, it is preferably dried at 70 to 130° C. for 10 seconds to 5 minutes, for example.

[0135] Examples of the adhesive include adhesive resins such as acrylic resin, urethane resin, rubber resin, silicone resin, epoxy resin, polyvinyl ether, polycarbonate, and ester resin, and acrylic resin is preferred.

[0136] In addition, in this specification, "adhesive resin" includes resins having adhesiveness and resins having adhesion. For example, the adhesive resin includes not only resins having adhesiveness itself, but also resins that exhibit adhesiveness by using with other components such as additives, or resins that exhibit adhesiveness due to the presence of triggers such as heat or water.

[0137] The adhesive layer may be curable or non-curable, for example, energy-ray-curable or non-energy-ray-curable. The curable adhesive layer can easily adjust its physical properties before and after curing.

[0138] In this specification, "energy ray" refers to a ray having an energy quantum in an electromagnetic wave or a charged particle beam. Examples of energy ray include ultraviolet rays, radiation, electron beams, etc. For example, ultraviolet rays can be irradiated by using a high-pressure mercury lamp, a fusion lamp, a xenon lamp, a black light lamp, or an LED lamp as an ultraviolet source. For an electron beam, an electron beam generated by an electron beam accelerator, etc. can be irradiated.

[0139] In the present specification, “energy ray-curable” means a property of being cured by irradiation with energy rays, and “non-energy ray-curable” means a property of not being cured even by irradiation with energy rays.

[0140] The adhesive layer may consist of one layer (single layer) or two or more layers. When the adhesive layer consists of multiple layers, the multiple layers may be the same or different from each other, and the combination of the multiple layers is not particularly limited.

[0141] The thickness of the adhesive layer is preferably 1 to 100 μm, more preferably 1 to 60 μm, and particularly preferably 1 to 30 μm.

[0142] Here, “the thickness of the adhesive layer” refers to the thickness of the entire adhesive layer. For example, the thickness of an adhesive layer composed of a plurality of layers refers to the total thickness of all the layers constituting the adhesive layer.

[0143] The substrate and the adhesive layer may have the same shape, but the substrate and the adhesive layer are preferably laminated so that the peripheries of the shapes of the substrate and the adhesive layer in plan view coincide with each other.

[0144] The optical properties of the adhesive layer are not particularly limited as long as they are within a range that does not impair the effects of the present invention. For example, the adhesive layer may be an adhesive layer that transmits energy rays.

[0145] Next, the adhesive composition will be described.

[0146] The adhesive composition described below may contain, for example, one or more of the following components so that the total content (mass %) does not exceed 100 mass %.

[0147] <<Adhesive composition>>

[0148] When the adhesive layer is energy-ray-curable, examples of adhesive compositions containing energy-ray-curable adhesives, i.e., energy-ray-curable adhesive compositions, include: adhesive compositions (I-1) containing a non-energy-ray-curable adhesive resin (I-1a) (hereinafter, sometimes abbreviated as “adhesive resin (I-1a)”) and an energy-ray-curable compound; adhesive compositions (I-2) containing an energy-ray-curable adhesive resin (I-2a) (hereinafter, sometimes abbreviated as “adhesive resin (I-2a)”) having an unsaturated group introduced into the side chain of the non-energy-ray-curable adhesive resin (I-1a); adhesive compositions (I-3) containing the adhesive resin (I-2a) and an energy-ray-curable compound, etc.

[0149] <Adhesive composition (I-1)>

[0150] As described above, the adhesive composition (I-1) contains the non-energy ray-curable adhesive resin (I-1a) and the energy ray-curable compound.

[0151] [Adhesive resin (I-1a)]

[0152] The adhesive resin (I-1a) is preferably an acrylic resin.

[0153] Examples of the acrylic resin include acrylic polymers having at least a structural unit derived from an alkyl (meth)acrylate.

[0154] The acrylic resin may have only one type of structural unit or two or more types of structural units. When there are two or more types of structural units, the combination and ratio of these structural units may be arbitrarily selected.

[0155] The adhesive resin (I-1a) contained in the adhesive composition (I-1) may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio of these can be arbitrarily selected.

[0156] In the adhesive composition (I-1), the content of the adhesive resin (I-1a) is preferably 5 to 99% by mass, more preferably 10 to 95% by mass, and particularly preferably 15 to 90% by mass based on the total mass of the adhesive composition (I-1).

[0157] [Energy beam curable compound]

[0158] Examples of the energy-ray-curable compound contained in the adhesive composition (I-1) include monomers or oligomers that have an energy-ray-polymerizable unsaturated group and are curable by irradiation with energy rays.

[0159] Examples of monomers in the energy-ray-curable compound include poly(meth)acrylates such as trimethylolpropane tri(meth)acrylate, pentaerythritol (meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, and 1,6-hexanediol (meth)acrylate; urethane (meth)acrylate; polyester (meth)acrylate; polyether (meth)acrylate; epoxy (meth)acrylate, and the like.

[0160] Examples of the oligomer in the energy-ray curable compound include oligomers obtained by polymerizing the monomers exemplified above.

[0161] The energy-ray-curable compound is preferably urethane (meth)acrylate or urethane (meth)acrylate oligomer because the molecular weight is relatively large and the storage elastic modulus of the pressure-sensitive adhesive layer is less likely to decrease.

[0162] The energy-ray-curable compound contained in the adhesive composition (I-1) may be one kind or two or more kinds. When two or more kinds are contained, the combination and ratio thereof may be arbitrarily selected.

[0163] In the adhesive composition (I-1), the content of the energy ray curable compound is preferably 1 to 95% by mass, more preferably 5 to 90% by mass, and particularly preferably 10 to 85% by mass based on the total mass of the adhesive composition (I-1).

[0164] [Crosslinking agent]

[0165] When the acrylic polymer having a structural unit derived from a functional group-containing monomer in addition to a structural unit derived from an alkyl (meth)acrylate is used as the adhesive resin (I-1a), the adhesive composition (I-1) preferably further contains a crosslinking agent.

[0166] The cross-linking agent cross-links the adhesive resins (I-1a) by reacting with the functional groups, for example.

[0167] Examples of the crosslinking agent include isocyanate crosslinking agents (crosslinking agents having an isocyanate group) such as toluene diisocyanate, hexamethylene diisocyanate, xylylene diisocyanate, and adducts of these diisocyanates; epoxy crosslinking agents (crosslinking agents having a glycidyl group) such as ethylene glycol glycidyl ether; aziridine crosslinking agents (crosslinking agents having an aziridine group) such as hexa[1-(2-methyl)-aziridinyl]triphosphatriazine; metal chelate crosslinking agents (crosslinking agents having a metal chelate structure) such as aluminum chelate; isocyanurate crosslinking agents (crosslinking agents having an isocyanuric acid skeleton), and the like.

[0168] From the viewpoints of increasing the cohesive force of the adhesive to thereby increase the adhesive force of the adhesive layer and from the viewpoint of easy availability, the crosslinking agent is preferably an isocyanate crosslinking agent.

[0169] The cross-linking agent contained in the adhesive composition (I-1) may be one kind or two or more kinds. When two or more kinds are contained, the combination and ratio of the cross-linking agents may be arbitrarily selected.

[0170] When a crosslinking agent is used, the content of the crosslinking agent in the adhesive composition (I-1) is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass, based on 100 parts by mass of the adhesive resin (I-1a).

[0171] [Photopolymerization initiator]

[0172] The adhesive composition (I-1) may further contain a photopolymerization initiator. Even when irradiated with relatively low energy rays such as ultraviolet rays, the adhesive composition (I-1) containing a photopolymerization initiator can fully undergo a curing reaction.

[0173] Examples of the photopolymerization initiator include benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin benzoic acid methyl ester, and benzoin dimethyl ketal; acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propane-1-one, and 2,2-dimethoxy-1,2-diphenylethane-1-one; phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide, 2,4,6-trimethylbenzoyldiphenylphosphine oxide Acylphosphine oxide compounds; sulfides such as benzylphenyl sulfide and tetramethylthiuram monosulfide; α-keto alcohol compounds such as 1-hydroxycyclohexyl phenyl ketone; azo compounds such as azobisisobutyronitrile; titanocene compounds such as titanocene; thioxanthone compounds such as thioxanthone; peroxide compounds; diketone compounds such as diacetyl; benzil; dibenzil; benzophenone; 2,4-diethylthioxanthone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]acetone; 2-chloroanthraquinone, etc.

[0174] Furthermore, as the photopolymerization initiator, for example, quinone compounds such as 1-chloroanthraquinone, photosensitizers such as amines, and the like can be used.

[0175] The photopolymerization initiator contained in the adhesive composition (I-1) may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio of these can be arbitrarily selected.

[0176] When a photopolymerization initiator is used, the content of the photopolymerization initiator in the adhesive composition (I-1) is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass, relative to 100 parts by mass of the energy ray-curable compound.

[0177] [Other additives]

[0178] The adhesive composition (I-1) may contain other additives which are not any of the above-mentioned components within a range not impairing the effects of the present invention.

[0179] Examples of the other additives include known additives such as antistatic agents, antioxidants, softeners (plasticizers), fillers (fillers), rust inhibitors, colorants (pigments, dyes), sensitizers, thickeners, reaction retarders, and crosslinking accelerators (catalysts).

[0180] In addition, the reaction retarder refers to a component used to inhibit an unintended crosslinking reaction in the adhesive composition (I-1) during storage due to the action of a catalyst mixed in the adhesive composition (I-1). As the reaction retarder, for example, a reaction retarder that forms a chelate complex using a chelate corresponding to the catalyst can be listed, and more specifically, a reaction retarder having two or more carbonyl groups (-C(=O)-) in one molecule can be listed.

[0181] The adhesive composition (I-1) may contain other additives of one kind or of two or more kinds. When there are two or more kinds, the combination and ratio of these additives may be arbitrarily selected.

[0182] The content of other additives in the adhesive composition (I-1) is not particularly limited and may be appropriately selected depending on the type of additive.

[0183] [Solvent]

[0184] The adhesive composition (I-1) may contain a solvent. By containing a solvent, the coating suitability of the adhesive composition (I-1) on the surface to be coated is improved.

[0185] The solvent is preferably an organic solvent.

[0186] <Adhesive composition (I-2)>

[0187] As described above, the adhesive composition (I-2) contains an energy-ray-curable adhesive resin (I-2a) in which an unsaturated group is introduced into a side chain of a non-energy-ray-curable adhesive resin (I-1a).

[0188] [Adhesive resin (I-2a)]

[0189] The adhesive resin (I-2a) can be obtained, for example, by reacting an unsaturated group-containing compound having an energy ray-polymerizable unsaturated group with a functional group in the adhesive resin (I-1a).

[0190] The unsaturated group-containing compound is a compound having, in addition to the energy-ray-polymerizable unsaturated group, a group capable of bonding to the adhesive resin (I-1a) by reacting with a functional group in the adhesive resin (I-1a).

[0191] Examples of the energy beam polymerizable unsaturated group include a (meth)acryloyl group, a vinyl (ethylene) group, an allyl (2-propenyl) group, and the like, and a (meth)acryloyl group is preferred.

[0192] Examples of the group that can be bonded to the functional group in the adhesive resin (I-1a) include an isocyanate group and a glycidyl group that can be bonded to a hydroxyl group or an amino group, and a hydroxyl group and an amino group that can be bonded to a carboxyl group or an epoxy group.

[0193] Examples of the unsaturated group-containing compound include (meth)acryloyloxyethyl isocyanate, (meth)acryloyl isocyanate, and glycidyl (meth)acrylate.

[0194] The adhesive resin (I-2a) contained in the adhesive composition (I-2) may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio of these can be arbitrarily selected.

[0195] In the adhesive composition (I-2), the content of the adhesive resin (I-2a) is preferably 5 to 99% by mass, more preferably 10 to 95% by mass, and particularly preferably 10 to 90% by mass based on the total mass of the adhesive composition (I-2).

[0196] [Crosslinking agent]

[0197] For example, when the acrylic polymer having a structural unit derived from a functional group-containing monomer similar to that in the adhesive resin (I-1a) is used as the adhesive resin (I-2a), the adhesive composition (I-2) may further contain a crosslinking agent.

[0198] Examples of the cross-linking agent in the adhesive composition (I-2) include the same cross-linking agents as those in the adhesive composition (I-1).

[0199] The cross-linking agent contained in the adhesive composition (I-2) may be one kind or two or more kinds. When two or more kinds are contained, the combination and ratio of the cross-linking agents may be arbitrarily selected.

[0200] When a crosslinking agent is used, the content of the crosslinking agent in the adhesive composition (I-2) is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass, based on 100 parts by mass of the adhesive resin (I-2a).

[0201] [Photopolymerization initiator]

[0202] The adhesive composition (I-2) may further contain a photopolymerization initiator. Even when irradiated with relatively low energy rays such as ultraviolet rays, the adhesive composition (I-2) containing a photopolymerization initiator can fully undergo a curing reaction.

[0203] Examples of the photopolymerization initiator in the adhesive composition (I-2) include the same photopolymerization initiators as those in the adhesive composition (I-1).

[0204] The photopolymerization initiator contained in the adhesive composition (I-2) may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio of these can be arbitrarily selected.

[0205] When a photopolymerization initiator is used, the content of the photopolymerization initiator in the adhesive composition (I-2) is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass, based on 100 parts by mass of the adhesive resin (I-2a).

[0206] [Other additives, solvents]

[0207] The adhesive composition (I-2) may contain other additives which are not any of the above-mentioned components within a range not impairing the effects of the present invention.

[0208] Furthermore, the adhesive composition (I-2) may contain a solvent for the same purpose as in the case of the adhesive composition (I-1).

[0209] Examples of the other additives and solvent in the adhesive composition (I-2) include the same other additives and solvents as those in the adhesive composition (I-1).

[0210] The adhesive composition (I-2) may contain only one type of other additives and solvents, or two or more types of other additives and solvents. When two or more types of other additives and solvents are contained, the combination and ratio of these additives and solvents may be arbitrarily selected.

[0211] The contents of other additives and the solvent in the adhesive composition (I-2) are not particularly limited, and may be appropriately selected depending on their types.

[0212] <Adhesive composition (I-3)>

[0213] As described above, the adhesive composition (I-3) contains the adhesive resin (I-2a) and an energy-ray-curable compound.

[0214] In the adhesive composition (I-3), the content of the adhesive resin (I-2a) is preferably 5 to 99% by mass, more preferably 10 to 95% by mass, and particularly preferably 15 to 90% by mass based on the total mass of the adhesive composition (I-3).

[0215] [Energy beam curable compound]

[0216] The energy-ray-curable compound contained in the adhesive composition (I-3) includes monomers or oligomers having an energy-ray-polymerizable unsaturated group and curable by irradiation with energy rays, and the same energy-ray-curable compounds as those contained in the adhesive composition (I-1) can be listed.

[0217] The energy-ray-curable compound contained in the adhesive composition (I-3) may be one kind or two or more kinds. When two or more kinds are contained, the combination and ratio of these compounds may be arbitrarily selected.

[0218] In the adhesive composition (I-3), the content of the energy-ray curable compound is preferably 0.01 to 300 parts by mass, more preferably 0.03 to 200 parts by mass, and particularly preferably 0.05 to 100 parts by mass, relative to 100 parts by mass of the adhesive resin (I-2a).

[0219] [Photopolymerization initiator]

[0220] The adhesive composition (I-3) may further contain a photopolymerization initiator. Even when irradiated with relatively low energy rays such as ultraviolet rays, the adhesive composition (I-3) containing a photopolymerization initiator can fully undergo a curing reaction.

[0221] Examples of the photopolymerization initiator in the adhesive composition (I-3) include the same photopolymerization initiators as those in the adhesive composition (I-1).

[0222] The photopolymerization initiator contained in the adhesive composition (I-3) may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio of these can be arbitrarily selected.

[0223] When a photopolymerization initiator is used, in the adhesive composition (I-3), the content of the photopolymerization initiator is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass, relative to 100 parts by mass of the total content of the adhesive resin (I-2a) and the energy ray-curable compound.

[0224] [Other additives, solvents]

[0225] The adhesive composition (I-3) may contain other additives which are not any of the above-mentioned components within a range not impairing the effects of the present invention.

[0226] Furthermore, the adhesive composition (I-3) may contain a solvent for the same purpose as in the case of the adhesive composition (I-1).

[0227] Examples of the other additives and solvent in the adhesive composition (I-3) include the same other additives and solvents as those in the adhesive composition (I-1).

[0228] The adhesive composition (I-3) may contain only one type of other additives and solvents, or two or more types of other additives and solvents. When two or more types of other additives and solvents are contained, the combination and ratio of these additives and solvents may be arbitrarily selected.

[0229] The contents of other additives and the solvent in the adhesive composition (I-3) are not particularly limited, and may be appropriately selected depending on their types.

[0230] <Adhesive compositions other than adhesive compositions (I-1) to (I-3)>

[0231] So far, adhesive composition (I-1), adhesive composition (I-2) and adhesive composition (I-3) have been mainly described, but the components described as contained in them can also be used in all adhesive compositions other than these three adhesive compositions (in this specification, referred to as "adhesive compositions other than adhesive compositions (I-1) to (I-3)").

[0232] As adhesive compositions other than the adhesive compositions (I-1) to (I-3), in addition to energy-ray-curable adhesive compositions, non-energy-ray-curable adhesive compositions can be mentioned.

[0233] Examples of non-energy ray-curable adhesive compositions include adhesive compositions (I-4) containing non-energy ray-curable adhesive resins (I-1a) such as acrylic resins, urethane resins, rubber resins, silicone resins, epoxy resins, polyethylene ethers, polycarbonates, and ester resins, and preferred are non-energy ray-curable adhesive compositions containing acrylic resins.

[0234] It is preferred that adhesive compositions other than adhesive compositions (I-1) to (I-3) contain one or more crosslinking agents, and the content thereof can be set to be the same as that of the above-mentioned adhesive composition (I-1) and the like.

[0235] <Adhesive composition (I-4)>

[0236] As a preferable adhesive composition (I-4), an adhesive composition containing the said adhesive resin (I-1a) and a crosslinking agent is mentioned, for example.

[0237] [Adhesive resin (I-1a)]

[0238] Examples of the adhesive resin (I-1a) in the adhesive composition (I-4) include the same adhesive resins as those mentioned for the adhesive resin (I-1a) in the adhesive composition (I-1).

[0239] The adhesive resin (I-1a) contained in the adhesive composition (I-4) may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio of these can be arbitrarily selected.

[0240] In the adhesive composition (I-4), the content of the adhesive resin (I-1a) is preferably 5 to 99% by mass, more preferably 10 to 95% by mass, and particularly preferably 15 to 90% by mass based on the total mass of the adhesive composition (I-4).

[0241] [Crosslinking agent]

[0242] When the acrylic polymer having a structural unit derived from a functional group-containing monomer in addition to a structural unit derived from an alkyl (meth)acrylate is used as the adhesive resin (I-1a), the adhesive composition (I-4) preferably further contains a crosslinking agent.

[0243] Examples of the cross-linking agent in the adhesive composition (I-4) include the same cross-linking agents as those in the adhesive composition (I-1).

[0244] The cross-linking agent contained in the adhesive composition (I-4) may be one kind or two or more kinds. When two or more kinds are contained, the combination and ratio of these can be arbitrarily selected.

[0245] In the adhesive composition (I-4), the content of the crosslinking agent is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 25 parts by mass, and particularly preferably 0.1 to 10 parts by mass, based on 100 parts by mass of the adhesive resin (I-1a).

[0246] [Other additives, solvents]

[0247] The adhesive composition (I-4) may contain other additives which are not any of the above-mentioned components within a range not impairing the effects of the present invention.

[0248] Furthermore, the adhesive composition (I-4) may contain a solvent for the same purpose as in the case of the adhesive composition (I-1).

[0249] As the other additives and solvents in the adhesive composition (I-4), the same additives and solvents as those in the adhesive composition (I-1) can be listed. The other additives and solvents contained in the adhesive composition (I-4) can be only one or more, and when there are more than two, their combination and ratio can be arbitrarily selected.

[0250] The contents of other additives and the solvent in the adhesive composition (I-4) are not particularly limited, and may be appropriately selected depending on their types.

[0251] <<Method for preparing adhesive composition>>

[0252] Adhesive compositions other than adhesive compositions (I-1) to (I-3) such as adhesive compositions (I-1) to (I-3) or adhesive composition (I-4) can be obtained by blending the adhesive and, as necessary, components other than the adhesive, etc., which are used to constitute the adhesive composition.

[0253] The order of adding the components when blending them is not particularly limited, and two or more components may be added simultaneously.

[0254] When a solvent is used, the solvent may be mixed with any blending components other than the solvent to dilute the blending components in advance and then used, or the solvent may be mixed with the blending components without diluting the blending components in advance and then used.

[0255] When blending, the method for mixing the components is not particularly limited and may be appropriately selected from the following known methods: a method of mixing by rotating a stirring bar or a stirring blade, a method of mixing using a mixer, a method of mixing by applying ultrasonic waves, and the like.

[0256] The temperature and time for adding and mixing the components are not particularly limited as long as the components are not degraded, and may be appropriately adjusted. However, the temperature is preferably 15 to 30°C.

[0257] ○Intermediate layer, intermediate layer forming composition

[0258] The intermediate layer is in a sheet or film shape and contains the non-silicone resin as a main component.

[0259] The intermediate layer may be a layer containing only a non-silicone resin (a layer composed of a non-silicone resin), or may be a layer containing a non-silicone resin and a component other than the non-silicone resin.

[0260] The intermediate layer can be formed, for example, using an intermediate layer-forming composition containing the non-silicone resin. For example, the intermediate layer can be formed by applying the intermediate layer-forming composition on a surface on which the intermediate layer is to be formed and drying the composition as needed.

[0261] The weight average molecular weight of the non-silicone resin is 100,000 or less.

[0262] From the viewpoint of further improving the dividing suitability of the semiconductor wafer of the sheet for manufacturing a semiconductor device, the weight average molecular weight of the non-silicone resin may be, for example, any one of 80,000 or less, 60,000 or less, and 40,000 or less.

[0263] The lower limit of the weight average molecular weight of the non-silicone resin is not particularly limited. For example, the non-silicone resin having a weight average molecular weight of 5,000 or more is more easily available.

[0264] The weight average molecular weight of the non-silicone resin can be appropriately adjusted within the range set by any combination of the above lower limit and any upper limit. For example, in one embodiment, the weight average molecular weight can be any range of 5000 to 100000, 5000 to 80000, 5000 to 60000 and 5000 to 40000.

[0265] In the present embodiment, “the intermediate layer contains a non-silicone resin having a weight average molecular weight of 100,000 or less as a main component” means “the non-silicone resin is contained in an amount that can fully exert the effect of the intermediate layer containing the non-silicone resin having a weight average molecular weight of 100,000 or less”. From the above perspective, in the intermediate layer, the ratio of the content of the non-silicone resin to the total mass of the intermediate layer (in other words, in the intermediate layer forming composition, the ratio of the content of the non-silicone resin to the total content of all components except the solvent) is preferably 50% by mass or more, more preferably 80% by mass or more, and further preferably 90% by mass or more, for example, it can be any range of 95% by mass or more, 97% by mass or more, and 99% by mass or more.

[0266] On the other hand, the ratio is 100 mass % or less.

[0267] The non-silicone resin having a weight average molecular weight of 100,000 or less is not particularly limited as long as it is a resin component having no silicon atoms as constituent atoms and having a weight average molecular weight of 100,000 or less.

[0268] The non-silicone resin may be, for example, a polar resin having a polar group or a non-polar resin having no polar group.

[0269] For example, the non-silicone resin is preferably a polar resin because the solubility in the intermediate layer forming composition is high and the coating suitability of the intermediate layer forming composition is higher.

[0270] In this specification, unless otherwise specified, the "non-silicone resin" refers to a non-silicone resin having a weight average molecular weight of 100,000 or less.

[0271] The non-silicone resin may be, for example, a homopolymer that is a polymer of one monomer (in other words, having only one structural unit), or a copolymer that is a polymer of two or more monomers (in other words, having two or more structural units).

[0272] Examples of the polar group include a carbonyloxy group (—C(═O)—O—) and an oxycarbonyl group (—OC(═O)—).

[0273] The polar resin may have only a structural unit having a polar group, or may have both a structural unit having a polar group and a structural unit not having a polar group.

[0274] Examples of the structural unit having the polar group include a structural unit derived from vinyl acetate.

[0275] Examples of the structural unit having no polar group include a structural unit derived from ethylene.

[0276] The term "derivatization" as used herein means that the monomer has undergone structural changes necessary for polymerization.

[0277] In the polar resin, the ratio of the mass of the structural unit having a polar group to the total mass of all the structural units is preferably 5 to 70 mass%, for example, it can also be any range of 7.5 to 55 mass%, 10 to 40 mass% and 10 to 30 mass%. In other words, in the polar resin, the ratio of the mass of the structural unit not having a polar group to the total mass of all the structural units is preferably 30 to 95 mass%, for example, it can also be any range of 45 to 92.5 mass%, 60 to 90 mass% and 70 to 90 mass%. By making the ratio of the mass of the structural unit having a polar group above the lower limit, the polar resin has this characteristic of having a polar group more significantly. By making the ratio of the mass of the structural unit having a polar group below the upper limit, the polar resin has this characteristic of not having a polar group more moderately.

[0278] Examples of the polar resin include ethylene vinyl acetate copolymers and the like.

[0279] The content of the ethylene-vinyl acetate copolymer may be, for example, 50 to 100% by mass, 80 to 100% by mass, or 90 to 100% by mass relative to the total mass of the non-silicone resin contained in the intermediate layer.

[0280] Among them, as preferred polar resins, for example, a polar resin in which the ratio of the mass of the structural unit derived from vinyl acetate to the total mass of all structural units in the ethylene-vinyl acetate copolymer (sometimes referred to as "the content of the structural unit derived from vinyl acetate" in this specification) is 40% by mass or less, a polar resin in which the ratio is 30% by mass or less, a polar resin in which the ratio is 10 to 40% by mass, and a polar resin in which the ratio is 10 to 30% by mass. In other words, as preferred polar resins, for example, a polar resin in which the ratio of the mass of the structural unit derived from ethylene to the total mass of all structural units in the ethylene-vinyl acetate copolymer is 60% by mass or more, a polar resin in which the ratio is 70% by mass or more, a polar resin in which the ratio is 70 to 90% by mass, and a polar resin in which the ratio is 60 to 90% by mass.

[0281] By making the proportion of the content of the structural unit derived from vinyl acetate below the upper limit, even if chips are generated from the intermediate layer when the film-like adhesive is cut, the adhesion of the generated chips is moderately reduced, and the chips can be easily removed from the chip by methods such as cleaning.

[0282] Examples of the non-polar resin include polyethylene (PE) such as low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), metallocene catalyst linear low-density polyethylene (metallocene LLDPE), medium-density polyethylene (MDPE), and high-density polyethylene (HDPE); and polypropylene (PP).

[0283] The non-silicone resin contained in the intermediate layer-forming composition and the intermediate layer may be only one kind or two or more kinds. When two or more kinds are used, the combination and ratio of the non-silicone resin may be arbitrarily selected.

[0284] For example, the composition for forming the intermediate layer and the intermediate layer may contain one or more non-silicone resins as polar resins and no non-silicone resins as non-polar resins; may contain one or more non-silicone resins as non-polar resins and no non-silicone resins as polar resins; or may contain one or more non-silicone resins as polar resins and one or more non-silicone resins as non-polar resins at the same time.

[0285] The intermediate layer-forming composition and the intermediate layer preferably contain at least a non-silicone resin as a polar resin.

[0286] In the composition for forming an intermediate layer and the intermediate layer, the content of the non-silicone resin as a polar resin relative to the total content of the non-silicone resin is preferably 50% by mass or more, preferably 80% by mass or more, more preferably 90% by mass or more, for example, any range of 95% by mass or more, 97% by mass or more, and 99% by mass or more. By making the ratio equal to or greater than the lower limit, the effect brought about by using the polar resin can be more significantly obtained.

[0287] On the other hand, the ratio is 100 mass % or less.

[0288] That is, in the composition for forming the intermediate layer and the intermediate layer, the ratio of the content of the non-silicone resin as the non-polar resin to the total content of the non-silicone resin is preferably 20 mass % or less, more preferably 10 mass % or less, for example, it can be any range of 5 mass % or less, 3 mass % or less and 1 mass % or less.

[0289] On the other hand, the ratio is 0 mass % or more.

[0290] From the viewpoint of good operability of the composition for forming an intermediate layer, the composition for forming an intermediate layer preferably contains a solvent in addition to the non-silicone resin, and may contain a component (sometimes referred to as a solvent in this specification) that is not a component of the non-silicone resin and the solvent.

[0291] "additive").

[0292] The intermediate layer may contain only the non-silicone resin, or may contain both the non-silicone resin and the additive.

[0293] The additive may be any of a resin component (sometimes referred to as “other resin components” in this specification) and a non-resin component.

[0294] Examples of the other resin components include non-silicone resins and silicone resins having a weight average molecular weight (Mw) of more than 100,000.

[0295] The non-silicone resin having a weight average molecular weight of more than 100,000 is not particularly limited as long as it satisfies the above conditions.

[0296] As described below, the intermediate layer containing the silicone resin makes it easier to pick up the semiconductor chip with the film-like adhesive.

[0297] The silicone resin is not particularly limited as long as it is a resin component having silicon atoms as constituent atoms. For example, the weight average molecular weight of the silicone resin is not particularly limited.

[0298] Preferred silicone resins include, for example, resin components that exhibit a release effect on adhesive components, and more preferably, siloxane resins (also referred to as resin components having a siloxane bond (-Si-O-Si-) or siloxane compounds).

[0299] Examples of the siloxane-based resin include polydialkylsiloxane, etc. The alkyl group of the polydialkylsiloxane preferably has 1 to 20 carbon atoms.

[0300] Examples of the polydialkylsiloxane include polydimethylsiloxane and the like.

[0301] The non-resin component may be, for example, an organic compound or an inorganic compound, and is not particularly limited.

[0302] The additives contained in the intermediate layer-forming composition and the intermediate layer may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio of the additives may be arbitrarily selected.

[0303] For example, the composition for forming the intermediate layer and the intermediate layer may contain one or more resin components as the additive and contain no non-resin components, or may contain one or more non-resin components as the additive and contain no resin components, or may contain one or more resin components and one or more non-resin components as the additive at the same time.

[0304] When the intermediate layer forming composition and the intermediate layer contain the additive, in the intermediate layer, the ratio of the content of the non-silicone resin to the total mass of the intermediate layer (in other words, in the intermediate layer forming composition, the ratio of the content of the non-silicone resin to the total content of all components except the solvent) is preferably 90 to 99.99 mass%, for example, it can be any range of 90 to 97.5 mass%, 90 to 95 mass% and 90 to 92.5 mass%, can be any range of 92.5 to 99.99 mass%, 95 to 99.99 mass% and 97.5 to 99.99 mass%, and can be 92.5 to 97.5 mass%.

[0305] When the intermediate layer forming composition and the intermediate layer contain the additive, in the intermediate layer, the ratio of the content of the additive to the total mass of the intermediate layer (in other words, in the intermediate layer forming composition, the ratio of the content of the additive to the total content of all components except the solvent) is preferably 0.01 to 10 mass%, for example, it can be any range of 2.5 to 10 mass%, 5 to 10 mass%, and 7.5 to 10 mass%, can be any range of 0.01 to 7.5 mass%, 0.01 to 5 mass%, and 0.01 to 2.5 mass%, and can be 2.5 to 7.5 mass%.

[0306] The solvent contained in the composition for forming the intermediate layer is not particularly limited, but preferred solvents include, for example, hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutanol (2-methylpropane-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; amides (compounds having amide bonds) such as dimethylformamide and N-methylpyrrolidone, etc.

[0307] The solvent contained in the intermediate layer forming composition may be only one kind or two or more kinds. When two or more kinds are contained, the combination and ratio of these solvents may be arbitrarily selected.

[0308] The solvent contained in the intermediate layer forming composition is preferably tetrahydrofuran or the like, from the viewpoint of being able to more uniformly mix the components contained in the intermediate layer forming composition.

[0309] The content of the solvent in the intermediate layer forming composition is not particularly limited and may be appropriately selected, for example, depending on the types of components other than the solvent.

[0310] As described below, from the point of view that a semiconductor chip with a film-like adhesive can be more easily picked up, as a preferred intermediate layer, for example, the following intermediate layer can be listed: an intermediate layer containing ethylene-vinyl acetate copolymer as the non-silicone resin and a siloxane compound as the additive, and the ratio of the content of the ethylene-vinyl acetate copolymer (the non-silicone resin) in the intermediate layer to the total mass of the intermediate layer is within any of the above-mentioned numerical ranges, and the ratio of the content of the siloxane compound (the additive) in the intermediate layer to the total mass of the intermediate layer is within any of the above-mentioned numerical ranges.

[0311] As such an intermediate layer, for example, there can be cited an intermediate layer comprising an ethylene-vinyl acetate copolymer as the non-silicone resin and a siloxane compound as the additive, wherein the content of the ethylene-vinyl acetate copolymer in the intermediate layer is 90 to 99.99% by mass relative to the total mass of the intermediate layer, and the content of the siloxane compound in the intermediate layer is 0.01 to 10% by mass relative to the total mass of the intermediate layer. However, this is only a preferred example of the intermediate layer.

[0312] As a more preferred intermediate layer, for example, there can be cited an intermediate layer that contains an ethylene-vinyl acetate copolymer as the non-silicone resin and a siloxane compound as the additive, wherein the mass ratio of the structural unit derived from vinyl acetate to the total mass of all structural units in the ethylene-vinyl acetate copolymer (in other words, the content of the structural unit derived from vinyl acetate) is 10 to 40% by mass, and the content of the ethylene-vinyl acetate copolymer in the intermediate layer is 90 to 99.99% by mass relative to the total mass of the intermediate layer, and the content of the siloxane compound in the intermediate layer is 0.01 to 10% by mass relative to the total mass of the intermediate layer. However, this is only an example of a more preferred intermediate layer.

[0313] The semiconductor device manufacturing sheet is analyzed by X-ray photoelectron spectroscopy (hereinafter referred to as "XPS") to determine the film-like adhesive surface of the intermediate layer (for example, Figure 1 When analyzing the first surface 13a of the intermediate layer 13, the ratio of the concentration of silicon to the total concentration of carbon, oxygen, nitrogen and silicon (sometimes referred to as "the ratio of silicon concentration" in this specification) is preferably 1 to 20% on a molar basis of the elements. As described below, by using a sheet for manufacturing a semiconductor device having such an intermediate layer, a semiconductor chip with a film-like adhesive can be easily picked up.

[0314] The ratio of the silicon concentration can be calculated using the following formula.

[0315] [Measured value of silicon concentration based on XPS analysis (atomic%)] / {[Measured value of carbon concentration based on XPS analysis (atomic%)]+[Measured value of oxygen concentration based on XPS analysis (atomic%)]+[Measured value of nitrogen concentration based on XPS analysis (atomic%)]+[Measured value of silicon concentration based on XPS analysis (atomic%)]}×100

[0316] For XPS analysis, an X-ray photoelectron spectroscopy analysis apparatus (for example, "Quantra SXM" manufactured by ULVAC, Inc.) can be used with an X-ray irradiation angle of 45° and an X-ray beam diameter of XPS analysis was performed on the surface of the film-like adhesive layer of the intermediate layer at an output of 4.5 W.

[0317] From the point that the above-mentioned effect is more significant, the ratio of the silicon concentration can be calculated on the molar basis of the element, for example, in any range of 4 to 20%, 8 to 20% and 12 to 20%, in any range of 1 to 16%, 1 to 12% and 1 to 8%, in any range of 4 to 16% and 8 to 12%.

[0318] When XPS analysis is performed in the above manner, other elements that are not any of carbon, oxygen, nitrogen, and silicon may be detected in the surface of the intermediate layer (the surface to be analyzed by XPS). However, even if the other elements are detected, their concentrations are usually very small, so when calculating the ratio of the silicon concentration, the ratio of the silicon concentration can be calculated with high accuracy by using the measured values ​​of the concentrations of carbon, oxygen, nitrogen, and silicon.

[0319] The intermediate layer may consist of one layer (single layer) or two or more layers. When the intermediate layer consists of multiple layers, the multiple layers may be the same or different from each other, and the combination of the multiple layers is not particularly limited.

[0320] As described above, the maximum value of the width of the intermediate layer is preferably smaller than the maximum value of the width of the adhesive layer and the maximum value of the width of the substrate.

[0321] The maximum value of the width of the intermediate layer constituting the label portion can be appropriately selected in consideration of the size of the semiconductor wafer. For example, the maximum value of the width of the intermediate layer can be 150-160 mm, 200-210 mm, or 300-310 mm. These three numerical ranges correspond to semiconductor wafers whose maximum width in a direction parallel to the surface of the sheet attached to the semiconductor device manufacturing sheet is 150 mm, 200 mm, or 300 mm. However, as described above, after cutting accompanied by the formation of a modified layer in the semiconductor wafer, when the film adhesive is cut by expanding the semiconductor device manufacturing sheet, as described below, the plurality of semiconductor chips (semiconductor chip groups) after cutting are gathered together, and a semiconductor device manufacturing sheet is attached to these semiconductor chips.

[0322] In this specification, unless otherwise specified, "the width of the intermediate layer" means, for example, "the width of the intermediate layer in a direction parallel to the first surface of the intermediate layer". For example, in the case of an intermediate layer having a circular planar shape, the maximum value of the width of the intermediate layer is the diameter of the circle having the planar shape.

[0323] This is also the case with semiconductor wafers. That is, the “width of the semiconductor wafer” refers to,

[0324] “The width of the semiconductor wafer in a direction parallel to the surface of the semiconductor wafer attached to the semiconductor device manufacturing sheet”. For example, in the case of a semiconductor wafer having a circular planar shape, the maximum width of the semiconductor wafer is the diameter of the circle having the planar shape.

[0325] The maximum value of the width of the intermediate layer of 150 to 160 mm means that it is equal to or greater than the maximum value of the width of the semiconductor wafer of 150 mm within a range of not more than 10 mm.

[0326] Likewise, the maximum value of the width of the intermediate layer of 200 to 210 mm means a value that is equal to or greater than the maximum value of the width of the semiconductor wafer of 200 mm within a range of not more than 10 mm.

[0327] Likewise, the maximum value of the width of the intermediate layer of 300 to 310 mm means a value that is equal to or greater than the maximum value of the width of the semiconductor wafer of 300 mm within a range of not more than 10 mm.

[0328] That is, in this embodiment, regardless of whether the maximum width of the semiconductor wafer is 150 mm, 200 mm, or 300 mm, the difference between the maximum width of the intermediate layer and the maximum width of the semiconductor wafer may be, for example, 0 to 10 mm.

[0329] The thickness of the intermediate layer can be appropriately selected according to the purpose. The thickness of the intermediate layer is preferably 5 to 150 μm, more preferably 5 to 120 μm, for example, it can be any range of 10 to 90 μm and 10 to 60 μm, or it can be any range of 30 to 120 μm and 60 to 120 μm. In addition, as another aspect, the thickness of the intermediate layer of the label portion can be 15 to 80 μm or less.

[0330] By setting the thickness of the intermediate layer to be greater than the lower limit, the structure of the intermediate layer is further stabilized. By setting the thickness of the intermediate layer of the label portion to be greater than the lower limit, cracks in the intermediate layer can be suppressed from occurring during expansion.

[0331] By making the thickness of the intermediate layer of the label portion below the upper limit, the film adhesive can be cut more easily during blade cutting and the expansion of the semiconductor device manufacturing sheet. In addition, by making the thickness of the intermediate layer of the label portion below 80 μm, the possibility of poor pickup of the semiconductor chip with the film adhesive can be reduced.

[0332] Here, “the thickness of the intermediate layer” refers to the thickness of the entire intermediate layer. For example, the thickness of the intermediate layer composed of a plurality of layers refers to the total thickness of all the layers constituting the intermediate layer.

[0333] When the intermediate layer contains the silicone resin, especially when the compatibility of the silicone resin with the non-silicone resin as the main component is low, the silicone resin in the intermediate layer tends to be unevenly present on both sides (the first side and the side opposite to the first side) of the intermediate layer and its vicinity in the semiconductor device manufacturing sheet. And, the stronger this tendency is, the easier it is for the film adhesive adjacent to the intermediate layer (in direct contact with the intermediate layer) to be peeled off from the intermediate layer, and as described below, the easier it is to pick up the semiconductor chip with the film adhesive.

[0334] For example, when comparing intermediate layers that are different only in thickness but are identical in composition, area of ​​the two sides, etc., except for thickness, in these intermediate layers, the ratio (mass %) of the content of silicone resin relative to the total mass of the intermediate layer is the same. However, for the content (mass parts) of silicone resin in the intermediate layer, the intermediate layer with thicker thickness is more than the intermediate layer with thinner thickness. Therefore, when silicone resin is prone to uneven presence in the intermediate layer as described above, the amount of silicone resin unevenly present on both sides (the first side and the side opposite to the first side) and its vicinity in the intermediate layer with thicker thickness is greater than that in the intermediate layer with thinner thickness. Therefore, even if the ratio is not changed, the pick-up suitability of the semiconductor chip with film-like adhesive can be adjusted by adjusting the thickness of the intermediate layer in the semiconductor device manufacturing sheet. For example, by thickening the thickness of the intermediate layer in the semiconductor device manufacturing sheet, it is easier to pick up the semiconductor chip with film-like adhesive.

[0335] The intermediate layer can be formed using an adhesive composition containing its constituent materials. For example, by applying the adhesive composition to the surface on which the film-like adhesive is to be formed and drying it as needed, a film-like adhesive can be formed on the target site.

[0336] The intermediate layer forming composition can be applied by the same method as the above-mentioned adhesive composition.

[0337] The drying conditions of the intermediate layer forming composition are not particularly limited. When the intermediate layer forming composition contains the above-mentioned solvent, it is preferably dried by heating, and in this case, it is preferably dried at 60 to 130° C. for 1 to 6 minutes, for example.

[0338] ○Film Adhesive

[0339] The film-like adhesive has curing properties, preferably thermosetting properties, and preferably pressure-sensitive adhesive properties. The film-like adhesive having both thermosetting properties and pressure-sensitive adhesive properties can be attached to various adherends by gently pressing in an uncured state. In addition, the film-like adhesive can also be an adhesive that can be attached to various adherends by softening by heating. The film-like adhesive is finally formed into a cured product with high impact resistance by curing, and the cured product can maintain sufficient adhesive properties even under severe high temperature and high humidity conditions.

[0340] When looking down from above at the semiconductor device manufacturing sheet, the area of ​​the film adhesive (i.e., the area of ​​the first surface) is preferably set to be smaller than the area of ​​the substrate (i.e., the area of ​​the first surface) and the area of ​​the adhesive layer (i.e., the area of ​​the first surface) in a manner close to the area of ​​the semiconductor wafer before segmentation. In such a semiconductor device manufacturing sheet, there is an area (i.e., the non-laminated area) that is not in contact with the intermediate layer and the film adhesive on a portion of the first surface of the adhesive layer. As a result, the expansion of the semiconductor device manufacturing sheet becomes easier, and the force applied to the film adhesive during expansion will not be dispersed, so it is easier to cut the film adhesive.

[0341] The film-like adhesive can be formed using an adhesive composition containing its constituent materials. For example, the film-like adhesive can be formed on the target site by applying the adhesive composition on the target surface where the film-like adhesive is to be formed and drying it as needed.

[0342] The pressure-sensitive adhesive composition can be applied by the same method as the above-mentioned adhesive composition.

[0343] The drying conditions of the adhesive composition are not particularly limited. When the adhesive composition contains a solvent described below, it is preferably dried by heating, and in this case, for example, it is preferably dried at 70 to 130° C. for 10 seconds to 5 minutes.

[0344] The film-like adhesive may consist of one layer (single layer) or two or more layers. When consisting of multiple layers, the multiple layers may be the same or different from each other, and the combination of the multiple layers is not particularly limited.

[0345] As described above, the maximum value of the width of the film-like adhesive is preferably smaller than the maximum value of the width of the pressure-sensitive adhesive layer and the maximum value of the width of the substrate.

[0346] The maximum value of the width of the film-like adhesive constituting the label portion relative to the size of the semiconductor wafer may be the same as the maximum value of the width of the intermediate layer described above.

[0347] That is, the maximum value of the width of the film adhesive constituting the label portion can be appropriately selected in consideration of the size of the semiconductor wafer. For example, the maximum value of the width of the film adhesive constituting the label portion can be 150 to 160 mm, 200 to 210 mm, or 300 to 310 mm. These three numerical ranges correspond to semiconductor wafers whose maximum width in a direction parallel to the surface attached to the semiconductor device manufacturing sheet is 150 mm, 200 mm, or 300 mm.

[0348] When the semiconductor manufacturing sheet has a maximum value of the width of the film-like adhesive in the label portion within the above range, the film-like adhesive is less likely to scatter when expanding.

[0349] In this specification, unless otherwise specified, the "width of the film adhesive" refers to, for example

[0350] “Width of the film-like adhesive in a direction parallel to the first surface of the film-like adhesive” For example, in the case of a film-like adhesive having a circular planar shape, the maximum value of the width of the film-like adhesive is the diameter of the circle of the planar shape.

[0351] In addition, unless otherwise specified, the “width of the film adhesive” refers to the “width of the film adhesive before cutting (uncut)” and does not refer to the width of the film adhesive after cutting in the manufacturing process of the semiconductor chip with the film adhesive described later.

[0352] The maximum value of the width of the film adhesive of 150 to 160 mm means a value equal to or greater than the maximum value of the width of the semiconductor wafer of 150 mm within a range of not more than 10 mm.

[0353] Likewise, the maximum value of the width of the film adhesive of 200 to 210 mm means a value that is equal to or greater than the maximum value of the width of the semiconductor wafer of 200 mm within a range of not more than 10 mm.

[0354] Likewise, the maximum value of the width of the film adhesive of 300 to 310 mm means a value that is equal to or greater than the maximum value of the width of the semiconductor wafer of 300 mm within a range of not more than 10 mm.

[0355] That is, in this embodiment, regardless of whether the maximum width of the semiconductor wafer is 150 mm, 200 mm, or 300 mm, the difference between the maximum width of the film adhesive constituting the label portion and the maximum width of the semiconductor wafer can be, for example, 0 to 10 mm.

[0356] In the present embodiment, the maximum value of the width of the intermediate layer constituting the label portion and the maximum value of the width of the film-like adhesive may both be within any of the above numerical ranges.

[0357] That is, as an example of a sheet for manufacturing a semiconductor device according to the present embodiment, there can be listed a sheet for manufacturing a semiconductor device in which the maximum value of the width of the intermediate layer constituting the label portion and the maximum value of the width of the film-like adhesive constituting the label portion are both 150 to 160 mm, 200 to 210 mm or 300 to 310 mm.

[0358] The thickness of the film adhesive is not particularly limited, but is preferably 1 to 30 μm, more preferably 2 to 20 μm, and particularly preferably 3 to 10 μm. By making the thickness of the film adhesive above the lower limit, a higher adhesive force to the adherend (semiconductor chip) can be obtained. By making the thickness of the film adhesive below the upper limit, it is easier to cut the film adhesive when performing blade cutting and when performing the expansion of the semiconductor device manufacturing sheet.

[0359] Here, the “thickness of the film-like adhesive” refers to the thickness of the entire film-like adhesive. For example, the thickness of a film-like adhesive composed of a plurality of layers refers to the total thickness of all the layers constituting the film-like adhesive.

[0360] In this embodiment, the total thickness of the intermediate layer and the film-like adhesive is preferably 15 μm or more, more preferably 10 to 180 μm, further preferably 20 to 150 μm, and particularly preferably 25 to 120 μm.

[0361] By making the total thickness of the intermediate layer and the film-like adhesive greater than the lower limit, the possibility of cracking during the process of removing unnecessary parts during punching can be reduced. By making the total thickness of the intermediate layer and the film-like adhesive less than the upper limit, the effect of preventing winding marks tends to be excellent.

[0362] For the intermediate layer and the film-like adhesive, it is preferred that the area of ​​the first surface of the intermediate layer is greater than or equal to the area of ​​the first surface of the film-like adhesive, the intermediate layer and the film-like adhesive can be the same shape as each other, and it is preferred that the intermediate layer and the film-like adhesive are stacked in such a way that the peripheries of their top-view shapes remain consistent.

[0363] The adhesive composition described below may contain, for example, one or more of the following components so that the total content (mass %) does not exceed 100 mass %.

[0364] Next, the adhesive composition will be described.

[0365] <<Adhesive composition>>

[0366] Preferred examples of the adhesive composition include an adhesive composition containing a polymer component (a) and a thermosetting component (b). Each component will be described below.

[0367] In addition, the adhesive composition shown below is only a preferred example, and the adhesive composition of this embodiment is not limited to the adhesive composition shown below.

[0368] [Polymer component (a)]

[0369] The polymer component (a) is considered to be a component formed by a polymerization reaction of a polymerizable compound, and is a polymer compound that imparts film-forming properties, flexibility, etc. to the film-like adhesive and improves adhesion (in other words, adhesion) to an adhesive object such as a semiconductor chip. The polymer component (a) has thermoplasticity but does not have thermosetting properties.

[0370] The polymer component (a) contained in the adhesive composition and the film-like adhesive may be only one kind or two or more kinds. When there are two or more kinds, the combination and ratio of them can be arbitrarily selected.

[0371] Examples of the polymer component (a) include acrylic resins, urethane resins, phenoxy resins, silicone resins, and saturated polyester resins.

[0372] Among them, the polymer component (a) is preferably an acrylic resin.

[0373] In the adhesive composition, the ratio of the content of the polymer component (a) to the total content of all components except the solvent (i.e., the ratio of the content of the polymer component (a) in the film-like adhesive to the total mass of the film-like adhesive) is preferably 20 to 75% by mass, and more preferably 30 to 65% by mass.

[0374] [Thermosetting component (b)]

[0375] The thermosetting component (b) is a component having thermosetting properties and used to thermally cure the film-like adhesive.

[0376] The thermosetting component (b) contained in the adhesive composition and the film-like adhesive may be only one kind or two or more kinds. When there are two or more kinds, the combination and ratio of them can be arbitrarily selected.

[0377] Examples of the thermosetting component (b) include epoxy-based thermosetting resins, polyimide resins, and unsaturated polyester resins.

[0378] Among them, the thermosetting component (b) is preferably an epoxy-based thermosetting resin.

[0379] ○Epoxy thermosetting resin

[0380] The epoxy-based thermosetting resin is composed of an epoxy resin (b1) and a thermosetting agent (b2).

[0381] The epoxy-based thermosetting resin contained in the adhesive composition and the film-like adhesive may be only one kind or two or more kinds. When there are two or more kinds, the combination and ratio of the epoxy-based thermosetting resins may be arbitrarily selected.

[0382] Epoxy resin (b1)

[0383] As the epoxy resin (b1), known epoxy resins can be listed, for example, epoxy compounds with difunctionality or higher such as polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and its hydride, o-cresol novolak epoxy resin, dicyclopentadiene epoxy resin, biphenyl epoxy resin, bisphenol A epoxy resin, bisphenol F epoxy resin, and phenylene skeleton epoxy resin can be listed.

[0384] As the epoxy resin (b1), an epoxy resin having an unsaturated hydrocarbon group may also be used. The compatibility of the epoxy resin having an unsaturated hydrocarbon group with the acrylic resin is greater than the compatibility of the epoxy resin not having an unsaturated hydrocarbon group with the acrylic resin. Therefore, by using an epoxy resin having an unsaturated hydrocarbon group, the reliability of the package obtained by using a film-like adhesive is increased.

[0385] The epoxy resin (b1) contained in the adhesive composition and the film-like adhesive may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio of the epoxy resins may be arbitrarily selected.

[0386] Thermal curing agent (b2)

[0387] The thermosetting agent (b2) functions as a curing agent for the epoxy resin (b1).

[0388] As the thermosetting agent (b2), for example, a compound having two or more functional groups that can react with an epoxy group in one molecule can be cited. As the functional group, for example, a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxyl group, a group formed by anhydriding an acid group, etc. can be cited, preferably a phenolic hydroxyl group, an amino group or a group formed by anhydriding an acid group, etc., more preferably a phenolic hydroxyl group or an amino group.

[0389] Examples of the phenolic curing agent having a phenolic hydroxyl group in the thermosetting agent (b2) include polyfunctional phenol resins, biphenol, novolac-type phenol resins, dicyclopentadiene-type phenol resins, and aralkyl-type phenol resins.

[0390] Examples of the amine curing agent having an amino group in the thermosetting agent (b2) include dicyandiamide (DICY) and the like.

[0391] The heat curing agent (b2) may have an unsaturated hydrocarbon group.

[0392] The thermosetting agent (b2) contained in the adhesive composition and the film-like adhesive may be only one kind or two or more kinds. When two or more kinds are used, the combination and ratio of these can be arbitrarily selected.

[0393] In the adhesive composition and the film adhesive, the content of the thermosetting agent (b2) is preferably 0.1 to 500 parts by mass, more preferably 1 to 200 parts by mass, relative to 100 parts by mass of the epoxy resin (b1), for example, it can be any range of 1 to 100 parts by mass, 1 to 50 parts by mass, and 1 to 25 parts by mass. By making the content of the thermosetting agent (b2) above the lower limit, it is easier to cure the film adhesive. By making the content of the thermosetting agent (b2) below the upper limit, the moisture absorption rate of the film adhesive is reduced, and the reliability of the package obtained using the film adhesive is further improved.

[0394] In the adhesive composition and the film-like adhesive, the content of the thermosetting component (b) (for example, the total content of the epoxy resin (b1) and the thermosetting agent (b2)) is preferably 5 to 100 parts by mass, more preferably 5 to 75 parts by mass, and particularly preferably 5 to 50 parts by mass, and can be, for example, any range of 5 to 35 parts by mass and 5 to 20 parts by mass. By making the content of the thermosetting component (b) within the above range, the peeling force between the intermediate layer and the film-like adhesive is more stable.

[0395] In order to improve various physical properties of the film adhesive, in addition to the polymer component (a) and the thermosetting component (b), the adhesive composition and the film adhesive may further contain other components that are not the polymer component (a) and the thermosetting component (b) as needed.

[0396] Preferred components among other components contained in the adhesive composition and film-like adhesive include, for example, a curing accelerator (c), a filler (d), a coupling agent (e), a cross-linking agent (f), an energy-ray-curable resin (g), a photopolymerization initiator (h), a general additive (i), and the like.

[0397] [Curing accelerator (c)]

[0398] The curing accelerator (c) is a component for adjusting the curing speed of the adhesive composition.

[0399] Preferred curing accelerators (c) include, for example, tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; imidazoles (imidazoles in which one or more hydrogen atoms are replaced by groups other than hydrogen atoms) such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole; organic phosphines (phosphines in which one or more hydrogen atoms are replaced by organic groups) such as tributylphosphine, diphenylphosphine, and triphenylphosphine; and tetraphenylboron salts such as tetraphenyl phosphoniumtetraphenyl borate and triphenylphosphine tetraphenylborate.

[0400] The curing accelerator (c) contained in the adhesive composition and the film-like adhesive may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio of these can be arbitrarily selected.

[0401] When using a curing accelerator (c), in the adhesive composition and the film-like adhesive, the content of the curing accelerator (c) is preferably 0.01 to 10 parts by mass, and more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the content of the thermosetting component (b). By making the content of the curing accelerator (c) above the lower limit, the effect of using the curing accelerator (c) can be more significantly obtained. By making the content of the curing accelerator (c) below the upper limit, for example, the effect of suppressing the high-polarity curing accelerator (c) from moving to the bonding interface side with the adherend in the film-like adhesive under high temperature and high humidity conditions and segregating becomes higher, and the reliability of the package obtained using the film-like adhesive is further improved.

[0402] [Filling material (d)]

[0403] By making the film adhesive contain a filler (d), the cutting property of the film adhesive based on expansion is further improved. In addition, by making the film adhesive contain a filler (d), the adjustment of the thermal expansion coefficient of the film adhesive becomes easy, and by optimizing the thermal expansion coefficient for the object to which the film adhesive is attached, the reliability of the package obtained using the film adhesive is further improved. In addition, by making the film adhesive contain a filler (d), the moisture absorption rate of the cured film adhesive can be reduced, or the heat dissipation can be improved.

[0404] The filler (d) may be any of an organic filler and an inorganic filler, and is preferably an inorganic filler.

[0405] Preferred inorganic fillers include, for example, powders of silica, alumina, talc, calcium carbonate, titanium dioxide, red iron oxide, silicon carbide, boron nitride, etc.; beads obtained by spheroidizing these inorganic fillers; surface-modified products of these inorganic fillers; single crystal fibers of these inorganic fillers; glass fibers, etc.

[0406] Among them, the inorganic filler is preferably silicon dioxide or aluminum oxide.

[0407] The filler (d) contained in the adhesive composition and the film-like adhesive may be one type or two or more types. When two or more types are used, the combination and ratio of the fillers may be arbitrarily selected.

[0408] When the filler (d) is used, the content of the filler (d) in the adhesive composition is preferably 5 to 80% by mass, more preferably 10 to 70% by mass, and particularly preferably 20 to 60% by mass relative to the total content of all components except the solvent (i.e., the content of the filler (d) in the film-like adhesive relative to the total mass of the film-like adhesive). By making the ratio within the above range, the effect brought about by the use of the filler (d) can be more significantly obtained.

[0409] [Coupling agent (e)]

[0410] By making the film adhesive contain the coupling agent (e), the adhesion and closeness to the adherend are improved. In addition, by making the film adhesive contain the coupling agent (e), the water resistance of the cured product of the film adhesive is improved without impairing the heat resistance. The coupling agent (e) has a functional group that can react with an inorganic compound or an organic compound.

[0411] The coupling agent (e) is preferably a compound having a functional group that can react with a functional group possessed by the polymer component (a), the thermosetting component (b), etc., and is more preferably a silane coupling agent.

[0412] The coupling agent (e) contained in the adhesive composition and the film-like adhesive may be one kind or two or more kinds. When two or more kinds are contained, the combination and ratio of these can be arbitrarily selected.

[0413] When a coupling agent (e) is used, in the adhesive composition and the film adhesive, the content of the coupling agent (e) is preferably 0.03 to 20 parts by mass, more preferably 0.05 to 10 parts by mass, and particularly preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the total content of the polymer component (a) and the thermosetting component (b). By making the content of the coupling agent (e) above the lower limit, the effect of using the coupling agent (e) can be more significantly obtained, that is, improving the dispersibility of the filler (d) in the resin, improving the adhesion between the film adhesive and the adherend, etc. By making the content of the coupling agent (e) below the upper limit, the generation of out-gas can be further suppressed.

[0414] [Crosslinking agent (f)]

[0415] When the above-mentioned acrylic resin or the like having a functional group such as a vinyl group, a (meth)acryloyl group, an amino group, a hydroxyl group, a carboxyl group, an isocyanate group, etc. that can be bonded to other compounds is used as the polymer component (a), the adhesive composition and the film-like adhesive may also contain a crosslinking agent (f). The crosslinking agent (f) is a component for bonding and crosslinking the functional group in the polymer component (a) with other compounds, and by crosslinking in this way, the initial adhesive force and cohesive force of the film-like adhesive can be adjusted.

[0416] Examples of the crosslinking agent (f) include organic polyisocyanate compounds, organic polyimide compounds, metal chelate crosslinking agents (crosslinking agents having a metal chelate structure), and aziridine crosslinking agents (crosslinking agents having an aziridine group).

[0417] When an organic polyisocyanate compound is used as the crosslinking agent (f), a hydroxyl-containing polymer is preferably used as the polymer component (a). When the crosslinking agent (f) has an isocyanate group and the polymer component (a) has a hydroxyl group, a crosslinking structure can be easily introduced into the film adhesive by the reaction of the crosslinking agent (f) and the polymer component (a).

[0418] The crosslinking agent (f) contained in the adhesive composition and the film-like adhesive may be one kind or two or more kinds. When two or more kinds are used, the combination and ratio of the crosslinking agents may be arbitrarily selected.

[0419] When a crosslinking agent (f) is used, in the adhesive composition, the content of the crosslinking agent (f) is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, and particularly preferably 0.3 to 5 parts by mass relative to 100 parts by mass of the polymer component (a). By making the content of the crosslinking agent (f) above the lower limit, the effect of using the crosslinking agent (f) can be more significantly obtained. By making the content of the crosslinking agent (f) below the upper limit, excessive use of the crosslinking agent (f) can be suppressed.

[0420] [Energy ray curable resin (g)]

[0421] When the adhesive composition and the film-like adhesive contain the energy ray-curable resin (g), the properties of the film-like adhesive can be changed by irradiation with energy rays.

[0422] The energy-ray-curable resin (g) is a resin obtained from an energy-ray-curable compound.

[0423] Examples of the energy-ray-curable compound include compounds having at least one polymerizable double bond in the molecule, and acrylate compounds having a (meth)acryloyl group are preferred.

[0424] The energy-ray-curable resin (g) contained in the adhesive composition may be only one kind or two or more kinds. When two or more kinds are used, the combination and ratio of these can be arbitrarily selected.

[0425] When an energy-ray curable resin (g) is used, the content of the energy-ray curable resin (g) in the adhesive composition is preferably 1 to 95% by mass, more preferably 5 to 90% by mass, and particularly preferably 10 to 85% by mass relative to the total mass of the adhesive composition.

[0426] [Photopolymerization initiator (h)]

[0427] When the adhesive composition and the film-like adhesive contain the energy-ray curable resin (g), a photopolymerization initiator (h) may be contained in order to efficiently advance the polymerization reaction of the energy-ray curable resin (g).

[0428] Examples of the photopolymerization initiator (h) in the adhesive composition include benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin benzoic acid methyl ester, and benzoin dimethyl ketal; acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propane-1-one, and 2,2-dimethoxy-1,2-diphenylethane-1-one; phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide, 2,4,6-trimethylbenzoyldiphenylphosphine oxide, etc. Acylphosphine oxide compounds; sulfides such as benzylphenyl sulfide and tetramethylthiuram monosulfide; α-ketoalcohol compounds such as 1-hydroxycyclohexyl phenyl ketone; azo compounds such as azobisisobutyronitrile; titanocene compounds such as titanocene; thioxanthone compounds such as thioxanthone; peroxide compounds; diketone compounds such as diacetyl; benzil; dibenzil; benzophenone; 2,4-diethylthioxanthone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]acetone; quinone compounds such as 1-chloroanthraquinone and 2-chloroanthraquinone, etc.

[0429] Moreover, as a photopolymerization initiator (h), a photosensitizer, such as amine, etc., etc. are mentioned, for example.

[0430] The photopolymerization initiator (h) contained in the pressure-sensitive adhesive composition may be one type or two or more types. When two or more types are used, the combination and ratio of these types may be arbitrarily selected.

[0431] When a photopolymerization initiator (h) is used, the content of the photopolymerization initiator (h) is preferably 0.1 to 20 parts by mass, more preferably 1 to 10 parts by mass, and particularly preferably 2 to 5 parts by mass, relative to 100 parts by mass of the energy ray curable resin (g) in the adhesive composition.

[0432] [General additives (i)]

[0433] The general-purpose additive (i) may be a known additive and may be arbitrarily selected according to the purpose without particular limitation. Preferred additives include, for example, plasticizers, antistatic agents, antioxidants, colorants (dyes, pigments), gettering agents, and the like.

[0434] The general-purpose additive (i) contained in the adhesive composition and the film-like adhesive may be one kind or two or more kinds. When two or more kinds are contained, the combination and ratio of the general-purpose additive (i) may be arbitrarily selected.

[0435] The content of the adhesive composition and the film-like adhesive is not particularly limited and may be appropriately selected depending on the intended purpose.

[0436] [Solvent]

[0437] The adhesive composition preferably further contains a solvent. The adhesive composition containing a solvent has good handleability.

[0438] The solvent is not particularly limited, but preferred solvents include, for example, hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutanol (2-methylpropane-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone, etc.

[0439] The solvent contained in the adhesive composition may be only one kind or two or more kinds. When two or more kinds are contained, the combination and ratio of these solvents may be arbitrarily selected.

[0440] The solvent contained in the adhesive composition is preferably methyl ethyl ketone or the like from the viewpoint of being able to more uniformly mix the components contained in the adhesive composition.

[0441] The content of the solvent in the adhesive composition is not particularly limited and may be appropriately selected depending on the types of components other than the solvent, for example.

[0442] <<Method for preparing adhesive composition>>

[0443] The adhesive composition can be obtained by blending the respective components for constituting the adhesive composition.

[0444] For example, the adhesive composition can be prepared by the same method as the adhesive composition described above except that the types of the blended components are different.

[0445] ○Release film

[0446] The constituent material of the release film is preferably various resins, and the resins exemplified in the above-mentioned substrate can be mentioned, and polyethylene terephthalate (PET) is preferred.

[0447] The thickness of the release film can be appropriately selected depending on the purpose, and may be 10 μm or more and 200 μm or less, 20 μm or more and 150 μm or less, or 30 μm or more and 80 μm or less.

[0448] Here, the “thickness of the release film” refers to the thickness of the entire release film. For example, the thickness of a release film composed of a plurality of layers refers to the total thickness of all the layers constituting the release film.

[0449] In addition to the above-mentioned main constituent materials such as the resin, the release film may contain various known additives such as a filler, a colorant, an antistatic agent, an antioxidant, an organic lubricant, a catalyst, a softener (plasticizer), and the like.

[0450] The bonding surface of the release film and the film-like adhesive is preferably a release-treated surface treated with a release agent. The release-treated surface may contain a release agent. Examples of the release agent include alkyds, silicones, fluorines, unsaturated polyesters, polyolefins, waxes, etc., preferably silicone release agents containing silicone.

[0451] In order to use the above-mentioned release agent for release treatment, the following methods can be listed: the release agent is directly applied in a solvent-free state or after being diluted or emulsified with a solvent using a gravure coater, a Meyer rod coater, an air knife coater, a roll coater, etc., and the film coated with the release agent is provided at room temperature or under heating, or cured by electron beams, or a method of forming a laminated body by wet lamination, dry lamination, hot melt lamination, melt extrusion lamination, co-extrusion processing, etc.

[0452] ◇Roll body

[0453] As one embodiment of the sheet for manufacturing a semiconductor device of the present invention, there is provided a roll body in which the label portion and the outer peripheral portion are provided on the long release film and the roll body is wound with the label portion and the outer peripheral portion as the inner side.

[0454] "As the inner side" means facing the center side (core side) of the roll.

[0455] Figure 4 1 is a cross-sectional view schematically showing a roll body according to one embodiment of the present invention, and shows a state where the roll body is unwound and partially unfolded. Figure 4 include Figure 2 B-B' cross-section diagram.

[0456] The roll body 110 includes a label portion 30 and a peripheral portion (not shown), wherein two or more units of a label portion 30 including a substrate 11, an adhesive layer 12, an intermediate layer 13, and a film-like adhesive 14 are stacked on a release film 15. 30 , and the unit P is wound in such a manner that the side on which the substrate 11 is laminated faces the center side (core side) of the roll. The winding direction is the length direction of the long strip of release film 15. The number of windings of the roll is not particularly limited, but it is preferably wound more than one turn in such a manner that at least a portion of the semiconductor device manufacturing sheet is overlapped on the unit P.

[0457] One unit of the semiconductor device manufacturing sheet may include a film-like adhesive for attaching once or to one attachment object. Figure 4 In each unit P 30 The unit P includes a circular film adhesive 14 and two or more units are arranged continuously at a predetermined interval. 30 .

[0458] In a roll, each unit P 30 The structures included can be processed into the same shape as each other. A preferred shape is a circular support sheet 1, a circular intermediate layer 13 with a diameter smaller than that of the support sheet 1, and a film-like adhesive 14 stacked in a concentric circle.

[0459] Since the film adhesive 14 is easily attached to a semiconductor wafer or the like (attachment target) and has adhesiveness, it is suitable to store the film adhesive 14 in a roll form by forming a structure in which the film adhesive 14 is sandwiched between the release film 15 and the support sheet 1 .

[0460] The roll is also suitable for circulating the sheet for manufacturing semiconductor devices.

[0461] The roll can be produced, for example, by laminating a long release film, a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive in a corresponding positional relationship.

[0462] ◇Method for manufacturing a sheet for manufacturing semiconductor devices

[0463] The semiconductor device manufacturing sheet can be manufactured by stacking the above-mentioned layers so that the above-mentioned layers are in a corresponding positional relationship. The method of forming each layer is the same as described above.

[0464] For example, the sheet for manufacturing a semiconductor device can be produced by separately preparing a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive in advance, and bonding and laminating them in the order of the substrate, the adhesive layer, the intermediate layer, and the film-like adhesive.

[0465] However, this is only one example of a method for producing a sheet for producing a semiconductor device.

[0466] The semiconductor device manufacturing sheet can also be manufactured, for example, by the following method: pre-preparing two or more intermediate laminates composed of multiple layers stacked to form a semiconductor device manufacturing sheet, and bonding these intermediate laminates to each other. The structure of the intermediate laminate can be appropriately selected. For example, a first intermediate laminate (equivalent to the support sheet) having a structure formed by stacking a substrate and an adhesive layer, and a second intermediate laminate having a structure formed by stacking an intermediate layer and a film-like adhesive can be pre-prepared, and the adhesive layer in the first intermediate laminate is bonded to the intermediate layer in the second intermediate laminate, thereby manufacturing a semiconductor device manufacturing sheet.

[0467] However, this is only one example of a method for manufacturing a sheet for manufacturing a semiconductor device.

[0468] As the semiconductor device manufacturing sheet, for example, in manufacturing Figure 1When the area of ​​the first surface of the intermediate layer and the area of ​​the first surface of the film-like adhesive are smaller than the area of ​​the first surface of the adhesive layer and the first surface of the substrate, a step of processing the intermediate layer and the film-like adhesive to a target size can be added at any stage in the above-mentioned manufacturing method. For example, in the manufacturing method using the second intermediate laminate, a semiconductor device manufacturing sheet can be manufactured by adding a step of processing the intermediate layer and the film-like adhesive in the second intermediate laminate to a target size.

[0469] As the semiconductor device manufacturing sheet, for example, when manufacturing Figure 1 When the area of ​​the first surface of the substrate and the area of ​​the first surface of the adhesive layer are both smaller than the area of ​​the first surface of the release film, a step of processing the substrate and the adhesive layer to the target size can be added at any stage in the above-mentioned manufacturing method.

[0470] When manufacturing a sheet for manufacturing a semiconductor device having a release film on a film-like adhesive, for example, the film-like adhesive may be formed on the release film, and the remaining layers may be laminated while maintaining this state, thereby manufacturing the sheet for manufacturing a semiconductor device; or after laminating the substrate, the adhesive layer, the intermediate layer, and the film-like adhesive, the release film may be laminated on the film-like adhesive, thereby manufacturing the sheet for manufacturing a semiconductor device. The release film may be removed at a necessary stage before using the sheet for manufacturing a semiconductor device.

[0471] The sheet for manufacturing a semiconductor device having other layers in addition to the substrate, the pressure-sensitive adhesive layer, the intermediate layer, the film-like adhesive and the release film can be manufactured by adding a step of forming and laminating the other layers at an appropriate time in the above-mentioned manufacturing method.

[0472] Each layer of the semiconductor device manufacturing sheet can be processed into any shape by punching, for example. For example, when the intermediate layer 13 and the film adhesive 14 are formed into a circular shape, a punching blade of a corresponding shape can be used to punch the circular shape.

[0473] A method for producing a sheet for producing a semiconductor device according to an embodiment of the present invention may include the following steps: a lamination step of laminating a first intermediate laminate including the substrate and the adhesive layer and a second intermediate laminate including the intermediate layer and the film-like adhesive; and

[0474] A processing step of removing a portion of the film-like adhesive and the intermediate layer of the second intermediate laminate by punching to form the label portion, the groove, and the outer peripheral portion.

[0475] The second intermediate laminate used in the lamination step may be a laminate processed by punching (for example, the second intermediate laminate processed product described below).

[0476] The processing steps may include the following first processing step and second processing step.

[0477] A method for manufacturing a sheet for manufacturing a semiconductor device according to an embodiment of the present invention may include the following steps: a first processing step of forming a cutout portion C at a position corresponding to the outer periphery of the intermediate layer and the film-like adhesive constituting the label portion of the sheet for manufacturing a semiconductor device, with respect to the intermediate layer and the film-like adhesive of a second intermediate laminate having the intermediate layer and the film-like adhesive, and removing at least a portion of the film-like adhesive and the intermediate layer located outside the cutout portion C as a starting point, thereby obtaining a second intermediate laminate processed product;

[0478] A lamination step of laminating a first intermediate laminate including the substrate and the adhesive layer and a second intermediate laminate workpiece to obtain a laminate; and

[0479] With respect to the substrate and the adhesive layer of the stack, a cutout portion C' is formed at a position corresponding to the periphery of the substrate and the adhesive layer extending from the label portion of the sheet for manufacturing a semiconductor device, and at least a portion of the substrate and the adhesive layer located outside the cutout portion C' is removed to obtain a second processing step of the sheet for manufacturing a semiconductor device.

[0480] FIG3 is a schematic diagram showing an example of a method for manufacturing a semiconductor device manufacturing sheet according to the present embodiment. Figure 1 The semiconductor device manufacturing sheet shown is turned upside down.

[0481] (First processing step)

[0482] Figure 3A The second intermediate laminate 102 shown includes a film-like adhesive 14 and an intermediate layer 13 , and has a structure in which a release film 15 , a film-like adhesive 14 , an intermediate layer 13 , and a release film 16 are laminated in this order.

[0483] For the release film 16, the intermediate layer 13 and the film-like adhesive 14 of the second intermediate laminate 102, the first punching is performed to form the cutouts C1 and C2 from the surface on the side where the release film 16 is laminated. The cutout C2 corresponds to the periphery of the intermediate layer 13 and the film-like adhesive 14 constituting the label portion 30 of the sheet 101 for manufacturing a semiconductor device. The cutouts C1 and C2 at the punching positions here are arranged concentrically with each other. When punching, the cutouts C1 and C2 can be cut into the release film 15, or the cutouts C1 and C2 can be formed on the release film 15. Next, a portion located outside the cutout C2 as the starting point (the annular portion sandwiched by the cutouts C1 and C2) is removed to obtain the second intermediate laminate processed product 103. The outside here refers to the position outside the area surrounded by the cutout C2 in the direction parallel to the surface of the film-like adhesive. The second intermediate laminated product 103 has a first groove 35 ( Figure 3B ).

[0484] (Lamination process)

[0485] The release film 16 is removed from the second intermediate laminated product 103 obtained above, so that one surface of the intermediate layer 13 is exposed.

[0486] In addition, a release film (not shown) is removed from the first intermediate laminate with a release film having a substrate 11 and an adhesive layer 12 provided on one surface of the substrate 11, so that one surface of the adhesive layer 12 is exposed. Next, a lamination step is performed in which the exposed surface of the adhesive layer 12 of the first intermediate laminate 104 is bonded to the exposed surface of the intermediate layer 13 of the second intermediate laminate workpiece 103. The first intermediate laminate 104 is laminated in a manner covering the intermediate layer 13 and the film-like adhesive 14 of the second intermediate laminate workpiece 103. Thus, a laminate 105 ( Figure 3C ).

[0487] (Second processing step)

[0488] For the substrate 11, adhesive layer 12, intermediate layer 13 and film-like adhesive 14 of the laminate 105 thus obtained, a second punching is performed to form cutouts C3 and C4 from the surface on the side on which the substrate 11 is laminated. The cutout C3 corresponds to the periphery of the peripheral portion 32 of the semiconductor device manufacturing sheet 101. The cutout C4 corresponds to the periphery of the substrate 11 and the adhesive layer 12 located in the groove 34 of the semiconductor device manufacturing sheet 101. The cutout C4 at the punching position here is arranged concentrically with the cutouts C1 and C2. When punching, the cutouts C3 and C4 can be cut into the release film 15, or the cutouts C3 and C4 can be formed on the release film 15. Next, a portion located outside the cutout C4 as the starting point (the portion sandwiched by the cutouts C3 and C4) is removed, thereby obtaining the semiconductor device manufacturing sheet 101 ( Figure 3D Here, the outside refers to a position outside the region surrounded by the cutout portion C4 in a direction parallel to the surface of the film-like adhesive.

[0489] Here, the cut portion C4 is located closer to the radial outside of the film adhesive 14 in the label portion 30 than the cut portion C2, so the area of ​​the first surface of the adhesive layer 12 and the first surface of the substrate 11 are formed to be larger than the area of ​​the first surface of the intermediate layer 13 and the area of ​​the first surface of the film adhesive 14.

[0490] In addition, at this time, the cutout portion C3 is located at a position radially outside the film adhesive 14 in the label portion 30 than the cutout portion C1, so not only the base material 11 and the adhesive layer 12, but also the outer intermediate layer 13 and the film adhesive 14 portion are removed after the punching process. However, in the method for manufacturing a semiconductor device manufacturing sheet of the present embodiment, punching of the portion closer to the outside than the cutout portion C1 is not necessary.

[0491] A second groove 36 corresponding to the portion sandwiched by the cutouts C3 and C4 is formed on the semiconductor device manufacturing sheet 101. The portion formed by adding the second groove 36 and the first groove 35 corresponds to the groove 34 of the semiconductor device manufacturing sheet 101. The radial inner side of the film adhesive 14 surrounded by the cutout C2 corresponds to the label portion 30. The radial outer side of the cutout C3 of the film adhesive 14 of the label portion 30 corresponds to the outer peripheral portion 32.

[0492] In addition, in the embodiment shown in Figure 3, although two punching processes, namely the first processing step and the second processing step, are included, the label portion 30, the groove 34 and the peripheral portion 32 can also be formed by a single punching process (for example, forming cutout portions C1 and C2 on a stack of a second intermediate stack that has not been punched and a first intermediate stack).

[0493] The manufacturing method of a sheet for manufacturing a semiconductor device according to the present embodiment may further include the following second intermediate layer stack manufacturing step before the first processing step: applying an adhesive composition on the release-treated surface of the first release film and drying it to form a film-like adhesive, applying an intermediate layer forming composition on the release-treated surface of the release film and drying it to form an intermediate layer, and bonding the exposed surface of the film-like adhesive to the exposed surface of the intermediate layer, thereby obtaining a second intermediate layer stack with a first release film.

[0494] The manufacturing method of the sheet for manufacturing a semiconductor device according to the present embodiment may further include the following first intermediate stack manufacturing step before the lamination step: applying an adhesive composition on the release-treated surface of the release film and drying it to form an adhesive layer, and bonding the exposed surface of the adhesive layer to the substrate, thereby obtaining a first intermediate stack.

[0495] The method for manufacturing a sheet for manufacturing a semiconductor device according to one embodiment of the present invention includes a processing step accompanied by the punching process, so that the peripheral portion having the same layer structure as the label portion can be easily formed. Therefore, a sheet for manufacturing a semiconductor device that can effectively suppress the occurrence of winding marks in the roll can be easily manufactured.

[0496] ◇Method for using a sheet for manufacturing a semiconductor device (method for manufacturing a semiconductor chip with a film-like adhesive)

[0497] The sheet for manufacturing a semiconductor device can be used when manufacturing a semiconductor chip with a film-like adhesive in a process of manufacturing a semiconductor device.

[0498] As a method for manufacturing a semiconductor chip with a film-like adhesive according to one embodiment of the present invention, there is provided a method for manufacturing a semiconductor chip with a film-like adhesive having the following steps:

[0499] A step of laminating a semiconductor wafer or a semiconductor chip on the film-like adhesive side of the sheet for manufacturing a semiconductor device of the embodiment to obtain a laminated body; and

[0500] A step of cutting the film-like adhesive or the semiconductor wafer and the film-like adhesive along the outer periphery of the semiconductor chip to obtain a semiconductor chip with the film-like adhesive.

[0501] Hereinafter, a method of using the sheet for manufacturing a semiconductor device (a method of manufacturing a semiconductor chip with a film-like adhesive) will be described in detail with reference to the drawings.

[0502] The method for manufacturing a semiconductor chip with a film-like adhesive according to the embodiment includes: attaching the back side of a semiconductor wafer to the exposed surface of the film-like adhesive of a sheet for manufacturing a semiconductor device, thereby obtaining a laminated product consisting of the substrate, the adhesive layer, the intermediate layer, the film-like adhesive and the semiconductor wafer laminated in this order;

[0503] A step of cutting the film adhesive while dividing the semiconductor wafer to obtain semiconductor chips with the film adhesive; and

[0504] A step of pulling the semiconductor chip with the film-like adhesive off from the substrate, the adhesive layer, and the intermediate layer to pick it up.

[0505] FIG5 is a cross-sectional view showing a label portion for schematically illustrating an example of a method of using a semiconductor device manufacturing sheet, which shows a case where the semiconductor device manufacturing sheet is attached to a semiconductor wafer and then used. In this method, the semiconductor device manufacturing sheet is used as a dicing wafer. Here, Figure 1 Taking the semiconductor device manufacturing sheet 101 shown as an example, a method of using the sheet 101 will be described.

[0506] First, if Figure 5A As shown, the sheet 101 for semiconductor device manufacturing from which the release film 15 is removed is heated, and the film-like adhesive 14 therein is attached to the back surface 9 b ′ of the semiconductor wafer 9 ′.

[0507] Reference numeral 9a' denotes a circuit formation surface of the semiconductor wafer 9'.

[0508] The heating temperature when attaching the semiconductor device manufacturing sheet 101 is not particularly limited, but is preferably 40 to 70° C. from the viewpoint of further improving the heat-attachment stability of the semiconductor device manufacturing sheet 101 .

[0509] The width W of the intermediate layer 13 in the semiconductor device manufacturing sheet 101 is 13 and the width W of the film adhesive 14 14 The maximum values ​​are all related to the width W of the semiconductor wafer 9' 9’ The maximum values ​​are exactly the same, or different but with slight errors to almost the same.

[0510] Next, a blade is cut into the stack of the semiconductor device manufacturing sheet 101 and the semiconductor wafer 9 ′ obtained above from the circuit formation surface 9 a ′ side of the semiconductor wafer 9 ′ (blade dicing), thereby dividing the semiconductor wafer 9 ′ and simultaneously cutting the film adhesive 14 .

[0511] Blade dicing can be performed using a known method. For example, after fixing the area near the peripheral portion of the first surface 12a of the adhesive layer 12 in the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film adhesive 14 are not laminated (the non-laminated area) to a fixture such as a ring frame (not shown), a blade can be used to divide the semiconductor wafer 9' and cut the film adhesive 14.

[0512] like Figure 5B As shown, through this process, a plurality of semiconductor chips 914 with film adhesive can be obtained, which include a semiconductor chip 9 and a cut film adhesive 140 provided on the back surface 9b thereof. These semiconductor chips 914 with film adhesive are arranged and fixed on the intermediate layer 13 in the laminated sheet 10, and constitute a semiconductor chip group 910 with film adhesive.

[0513] The back surface 9b of the semiconductor chip 9 corresponds to the back surface 9b' of the semiconductor wafer 9'. In Fig. 5, reference numeral 9a denotes the circuit formation surface of the semiconductor chip 9, which corresponds to the circuit formation surface 9a' of the semiconductor wafer 9'.

[0514] When performing blade cutting, it is preferred that the blade is cut into the entire area of ​​the semiconductor wafer 9' in the thickness direction to split it, and at the same time, the blade is cut into the middle area of ​​the intermediate layer 13 of the semiconductor device manufacturing sheet 101 from the first surface 14a of the film adhesive 14, thereby cutting the film adhesive 14 in the entire area in its thickness direction without cutting into the adhesive layer 12.

[0515] That is, when performing blade cutting, it is preferred that: the blade is moved from the circuit forming surface 9a' of the semiconductor wafer 9' to at least cut into the first surface 13a of the intermediate layer 13 along the stacking direction of the stack of the semiconductor device manufacturing sheet 101 and the semiconductor wafer 9', and not cut into the surface of the intermediate layer 13 that is opposite to the first surface 13a (that is, the contact surface with the adhesive layer 12).

[0516] In this process, the blade can be easily prevented from reaching the substrate 11 in the above manner, thereby suppressing the generation of cutting chips from the substrate 11. In addition, by making the main component of the intermediate layer 13 cut by the blade a non-silicone resin with a weight average molecular weight of 100,000 or less, especially by making the weight average molecular weight of 100,000 or less, the generation of cutting chips from the intermediate layer 13 can also be suppressed.

[0517] The conditions for the blade cutting may be appropriately adjusted depending on the purpose and are not particularly limited.

[0518] Generally, the rotation speed of the blade is preferably 15000 to 50000 rpm, and the moving speed of the blade is preferably 5 to 75 mm / sec.

[0519] like Figure 5C As shown, after the blade cutting, the semiconductor chip 914 with the film-like adhesive is pulled off from the intermediate layer 13 in the laminated sheet 10 to be picked up. Here, the semiconductor chip 914 with the film-like adhesive is pulled off in the direction of the arrow P using a pulling tool 7 such as a vacuum nozzle (vacuum collet). In addition, the pulling tool 7 is not shown in section here.

[0520] The semiconductor chip 914 with the film-like adhesive can be picked up by a known method.

[0521] When the ratio of the silicon concentration in the first surface 13 a of the intermediate layer 13 is 1 to 20%, the semiconductor chip 914 with the film-like adhesive can be picked up more easily.

[0522] When the intermediate layer 13, for example, contains ethylene vinyl acetate copolymer as the non-silicone resin and a siloxane compound as the additive, and the content of the ethylene vinyl acetate copolymer in the intermediate layer is 90 to 99.99% by mass relative to the total mass of the intermediate layer, and the content of the siloxane compound in the intermediate layer is 0.01 to 10% by mass relative to the total mass of the intermediate layer, it is easier to pick up the semiconductor chip 914 with a film-like adhesive.

[0523] As a preferred embodiment of the method for producing a semiconductor chip with a film-like adhesive described above, for example, the following can be cited:

[0524] A method for manufacturing a semiconductor chip with a film-like adhesive, comprising a semiconductor chip and a film-like adhesive provided on the back surface of the semiconductor chip, wherein:

[0525] The semiconductor device manufacturing sheet comprises the substrate, the adhesive layer, the intermediate layer and the film-like adhesive.

[0526] The manufacturing method comprises: a process of attaching the film-like adhesive therein to the back side of the semiconductor wafer while heating the semiconductor device manufacturing sheet; a process of dividing the semiconductor wafer to which the film-like adhesive is attached by cutting from its circuit forming surface side into the entire area in the thickness direction to produce semiconductor chips, and simultaneously cutting the semiconductor device manufacturing sheet from its film-like adhesive side in the thickness direction to the middle area of ​​the intermediate layer, cutting the film-like adhesive without cutting into the adhesive layer, thereby obtaining a semiconductor chip group with film-like adhesive in which a plurality of semiconductor chips with the film-like adhesive are neatly arranged on the intermediate layer; and a process of pulling the semiconductor chip with the film-like adhesive away from the intermediate layer to pick it up (sometimes referred to as "manufacturing method 1" in this specification).

[0527] A method for manufacturing a semiconductor chip with a film-like adhesive according to another embodiment includes the steps of attaching the back surface of a semiconductor chip group in which a plurality of semiconductor chips are arranged in a regular pattern to an exposed surface of the film-like adhesive of a sheet for manufacturing a semiconductor device, thereby obtaining a laminated product consisting of the substrate, the adhesive layer, the intermediate layer, the film-like adhesive, and the semiconductor chip group laminated in this order;

[0528] A step of cutting the film adhesive to obtain a semiconductor chip with the film adhesive; and

[0529] A step of pulling the semiconductor chip with the film-like adhesive off from the substrate, the adhesive layer, and the intermediate layer to pick it up.

[0530] 6 is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor chip used as a sheet for manufacturing a semiconductor device, and shows a case where the semiconductor chip is manufactured by dicing accompanied by formation of a reformed layer in a semiconductor wafer.

[0531] FIG. 7 is a cross-sectional view schematically illustrating another example of a method of using a semiconductor device manufacturing sheet, which shows a case where the semiconductor device manufacturing sheet is attached to a semiconductor chip and then used. In this method, the semiconductor device manufacturing sheet is used as a wafer. Figure 1 Taking the semiconductor device manufacturing sheet 101 shown as an example, a method of using the sheet 101 will be described.

[0532] First, before using the semiconductor device manufacturing sheet 101, Fig. 6A As shown, a semiconductor wafer 9' is prepared, and a back grinding tape (sometimes also referred to as a surface protection tape) 8 is attached to its circuit formation surface 9a'.

[0533] In FIG. 6 , reference numeral W9’ represents the width of the semiconductor wafer 9 ′.

[0534] Then, if Figure 6B As shown, by irradiating laser light (not shown) so as to be focused on a focal point set inside the semiconductor wafer 9 ′, a reformed layer 90 ′ is formed inside the semiconductor wafer 9 ′.

[0535] It is preferable that the semiconductor wafer 9 ′ is irradiated with the laser beam from the back surface 9 b ′ side of the semiconductor wafer 9 ′.

[0536] The position of the focus at this time is the position where the semiconductor wafer 9 ′ is to be divided (diced), and this position is set so that semiconductor chips of a target size, shape, and number can be obtained from the semiconductor wafer 9 ′.

[0537] Next, the back side 9b' of the semiconductor wafer 9' is ground using a grinder (not shown). Thus, the thickness of the semiconductor wafer 9' is adjusted to the target value, and the semiconductor wafer 9' is divided at the location where the modified layer 90' is formed by utilizing the force applied to the semiconductor wafer 9' during grinding. Figure 6C As shown, a plurality of semiconductor chips 9 are manufactured.

[0538] Unlike other parts of the semiconductor wafer 9', the modified layer 90' of the semiconductor wafer 9' is modified by irradiating the laser, and its strength becomes weak. Therefore, by applying force to the semiconductor wafer 9' formed with the modified layer 90', a force is applied to the modified layer 90', and the semiconductor wafer 9' is cracked at the part of the modified layer 90', and a plurality of semiconductor chips 9 can be obtained.

[0539] In this way, the semiconductor chips 9 to be used as the semiconductor device manufacturing sheet 101 can be obtained. More specifically, through this step, a semiconductor chip group 901 in which a plurality of semiconductor chips 9 are aligned and fixed on the back grinding tape 8 can be obtained.

[0540] When looking down at the semiconductor chipset 901 from above, the plane shape formed by connecting the outermost parts of the semiconductor chipset 901 (in this specification, this plane shape is sometimes referred to as the "plane shape of the semiconductor chipset") is exactly the same as the plane shape of the semiconductor wafer 9' when looking down at the semiconductor wafer 9' in the same way, or the difference between the two plane shapes is so slight that it can be ignored. It can be said that the plane shape of the semiconductor chipset 901 is roughly the same as the plane shape of the semiconductor wafer 9'.

[0541] Therefore, if Figure 6C As shown, the width of the planar shape of the semiconductor chip group 901 can be regarded as being equal to the width W of the semiconductor wafer 9 ′. 9’Also, the maximum value of the width of the planar shape of the semiconductor chip group 901 can be considered to be equal to the width W of the semiconductor wafer 9 ′. 9’ The maximum value is the same.

[0542] Although the case where the semiconductor chips 9 are manufactured from the semiconductor wafer 9 ′ as desired is shown here, a part of the semiconductor wafer 9 ′ may not be divided into the semiconductor chips 9 depending on the conditions when the back surface 9 b ′ of the semiconductor wafer 9 ′ is polished.

[0543] Next, a semiconductor chip with a film-like adhesive is manufactured using the semiconductor chip 9 (semiconductor chip group 901) obtained as described above.

[0544] First, if Fig. 7A As shown, while heating a semiconductor device manufacturing sheet 101 with the release film 15 removed, the film adhesive 14 therein is attached to the back surfaces 9b of all semiconductor chips 9 in the semiconductor chip group 901. At this time, the film adhesive 14 may be attached to an incompletely divided semiconductor wafer.

[0545] The width W of the intermediate layer 13 in the semiconductor device manufacturing sheet 101 is 13 The maximum value of 14 The maximum values ​​are all related to the width W of the semiconductor wafer 9' 9’ The maximum values ​​(in other words, the width of the semiconductor chip group 901) are exactly the same, or are different but the error is slight and they are almost the same.

[0546] At this time, the film adhesive 14 (semiconductor device manufacturing sheet 101) can be attached to the semiconductor chip group 901 by the same method as the method of attaching the film adhesive 14 (semiconductor device manufacturing sheet 101) to the semiconductor wafer 9' in the manufacturing method 1, except that the semiconductor chip group 901 is used instead of the semiconductor wafer 9'.

[0547] Next, the back grinding tape 8 is removed from the semiconductor chip group 901 in the fixed state. Figure 7B As shown, the semiconductor device manufacturing sheet 101 is stretched in a direction parallel to its surface (e.g., the first surface 12a of the adhesive layer 12) while being cooled, thereby expanding. Here, the direction of expansion of the semiconductor device manufacturing sheet 101 is indicated by arrow E1. By expanding in this way, the film-like adhesive 14 can be cut along the periphery of the semiconductor chip 9.

[0548] Through this process, a plurality of semiconductor chips 914 with film adhesives are obtained, each of which includes a semiconductor chip 9 and a cut film adhesive 140 disposed on the back surface 9b thereof. These semiconductor chips 914 with film adhesives are arranged and fixed on the intermediate layer 13 in the laminate sheet 10, and constitute a semiconductor chip group 910 with film adhesives.

[0549] The semiconductor chip 914 with a film-like adhesive and the semiconductor chip group 910 with a film-like adhesive obtained here are basically the same as the semiconductor chip 914 with a film-like adhesive and the semiconductor chip group 910 with a film-like adhesive obtained in the manufacturing method 1 described above.

[0550] When a part of the semiconductor wafer 9 ′ is not divided into the semiconductor chips 9 when the semiconductor wafer 9 ′ is divided as described above, the part of the semiconductor wafer 9 ′ can be divided into the semiconductor chips by performing this step.

[0551] The semiconductor device manufacturing sheet may be a sheet for cold expansion, wherein the cold expansion is performed by expanding the semiconductor device manufacturing sheet in a direction parallel to the plane of the semiconductor device manufacturing sheet at a temperature lower than room temperature, thereby cutting the film-like adhesive. In this specification, "room temperature" refers to a temperature that is not particularly cooled or heated, that is, a normal temperature, such as a temperature of 15 to 25°C.

[0552] The semiconductor device manufacturing sheet 101 is preferably expanded at a temperature of -5°C or higher and lower than 23°C, and more preferably expanded at a temperature of -5°C to 5°C. By cooling and expanding the semiconductor device manufacturing sheet 101 in the above manner (cold expansion), the film-like adhesive 14 can be cut more easily with high precision.

[0553] The expansion of the semiconductor device manufacturing sheet 101 can be performed using a known method. For example, after the area near the peripheral portion of the first surface 12a of the adhesive layer 12 in the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film adhesive 14 are not laminated (the non-laminated area) is fixed to a fixture such as a ring frame (not shown), the area of ​​the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film adhesive 14 are laminated is pushed from the substrate 11 side in the direction from the substrate 11 to the adhesive layer 12, and the semiconductor device manufacturing sheet 101 is expanded.

[0554] Figure 7BIn the embodiment, although the non-laminated area on the first surface 12a of the adhesive layer 12 where the intermediate layer 13 and the film-like adhesive 14 are not laminated is almost parallel to the first surface 13a of the intermediate layer 13, as described above, in a state expanded by pushing up the semiconductor device manufacturing sheet 101, the non-laminated area includes an inclined surface, and the height of the inclined surface gradually decreases along a direction opposite to the above-mentioned pushing direction as it approaches the periphery of the adhesive layer 12.

[0555] In this process, by providing the semiconductor device manufacturing sheet 101 with an intermediate layer 13 (in other words, by providing the film-like adhesive 14 before cutting on the intermediate layer 13), the film-like adhesive 14 can be cut with good precision at the target position (in other words, along the periphery of the semiconductor chip 9), thereby suppressing poor cutting.

[0556] like Figure 7C As shown, after expansion, the semiconductor chip 914 with the film-like adhesive is pulled away from the intermediate layer 13 in the laminated sheet 10 to be picked up.

[0557] The picking up at this time can be performed by the same method as the picking up in the manufacturing method 1 described above, and the picking up suitability is also the same as the picking up suitability in the manufacturing method 1.

[0558] For example, in this step, when the ratio of the silicon concentration in the first surface 13 a of the intermediate layer 13 is 1 to 20%, the semiconductor chip 914 with the film-like adhesive can be picked up more easily.

[0559] In addition, when the intermediate layer 13, for example, contains ethylene vinyl acetate copolymer as the non-silicone resin and a siloxane compound as the additive, the content of the ethylene vinyl acetate copolymer in the intermediate layer relative to the total mass of the intermediate layer is 90 to 99.99 mass %, and the content of the siloxane compound in the intermediate layer relative to the total mass of the intermediate layer is 0.01 to 10 mass %, it is possible to more easily pick up the semiconductor chip 914 with a film-like adhesive.

[0560] As a preferred embodiment of the method for producing a semiconductor chip with a film-like adhesive described above, for example, the following can be cited:

[0561] A method for manufacturing a semiconductor chip with a film-like adhesive, comprising a semiconductor chip and a film-like adhesive provided on the back surface of the semiconductor chip, wherein:

[0562] The semiconductor device manufacturing sheet comprises the substrate, the adhesive layer, the intermediate layer and the film-like adhesive.

[0563] The manufacturing method includes the following steps: a step of forming a modified layer inside the semiconductor wafer by irradiating a laser beam in a manner focused on a focal point set inside the semiconductor wafer; a step of grinding the back side of the semiconductor wafer after the modified layer is formed and dividing the semiconductor wafer at the location where the modified layer is formed by using the force applied to the semiconductor wafer during grinding to obtain a semiconductor chip group in which a plurality of semiconductor chips are in an orderly arranged state; a step of heating the sheet for manufacturing semiconductor devices and attaching the film-like adhesive therein to the back sides of all semiconductor chips in the semiconductor chip group; a step of cooling the sheet for manufacturing semiconductor devices attached to the semiconductor chip group and stretching it in a direction parallel to its surface at a temperature below room temperature to cut the film-like adhesive along the periphery of the semiconductor chip to obtain a semiconductor chip group with a film-like adhesive in which a plurality of semiconductor chips with the film-like adhesive are in an orderly arranged state on the intermediate layer; and a step of pulling the semiconductor chip with the film-like adhesive away from the intermediate layer and picking it up (sometimes referred to as "manufacturing method 2" in this specification).

[0564] So far, any one of the manufacturing methods 1 and 2 is based on Figure 1 The semiconductor device manufacturing sheet 101 shown in the embodiment is used as an example to explain its use method, but the semiconductor device manufacturing sheet of other embodiments can also be used in the same manner. In this case, other steps can be appropriately added based on the difference in the structure of the semiconductor device manufacturing sheet and the semiconductor device manufacturing sheet 101 as needed to use the semiconductor device manufacturing sheet.

[0565] Not limited to the cases of manufacturing method 1 and manufacturing method 2, after obtaining the semiconductor chip group with film-like adhesive, before picking up the semiconductor chip with film-like adhesive, the stacked sheet can be expanded in a direction parallel to the surface (first surface) on the middle layer side of the adhesive layer, maintaining this state and further heating the peripheral portion of the semiconductor chip with film-like adhesive (semiconductor chip group with film-like adhesive) in the stacked sheet that is not loaded with the film-like adhesive.

[0566] This allows the peripheral portion to shrink, and at the same time, the distance between adjacent semiconductor chips in the laminated sheet, that is, the cut width, to be sufficiently wide and to be kept at a high uniformity. Furthermore, the semiconductor chip with the film-like adhesive can be picked up more easily.

[0567] Example

[0568] The present invention will be described in more detail below using specific examples, but the present invention is not limited to the following examples.

[0569] <<Raw materials for preparing adhesive composition>>

[0570] The raw materials used for preparing the adhesive composition are shown below.

[0571] [Polymer component (a)]

[0572] (a)-1: an acrylic resin (weight average molecular weight: 800,000, glass transition temperature: 9° C.) obtained by copolymerizing methyl acrylate (95 parts by mass) and 2-hydroxyethyl acrylate (5 parts by mass).

[0573] [Epoxy resin (b1)]

[0574] (b1)-1: Cresol novolac type epoxy resin to which an acryl group is added ("CNA147" manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent weight 518 g / eq, number average molecular weight 2100, unsaturated group content equal to epoxy group content)

[0575] [Thermosetting agent (b2)]

[0576] (b2)-1: Aralkyl type phenolic resin ("Milex XLC-4L" manufactured by Mitsui Chemicals, Inc., number average molecular weight: 1100, softening point: 63°C)

[0577] [Filling material (d)]

[0578] (d)-1: Spherical silica ("YA050C-MJE" manufactured by Admatech, average particle size 50 nm, methacryl silane treated product)

[0579] [Coupling agent (e)]

[0580] (e)-1: Silane coupling agent, 3-glycidyloxypropylmethyldiethoxysilane ("KBE-402" manufactured by Shin-Etsu Chemical Co., Ltd.)

[0581] [Crosslinking agent (f)]

[0582] (f)-1: Toluene diisocyanate crosslinking agent ("CORONATE L" manufactured by TOSOH CORPORATION)

[0583] [Antistatic agent (g)]

[0584] (g)-1: Reduced graphene oxide ("N002-PDR" manufactured by Angstrom Material)

[0585] [Example 1]

[0586] <<Manufacturing of Sheet for Semiconductor Device Manufacturing>>

[0587] <Manufacturing of base material>

[0588] Low-density polyethylene (LDPE, "SUMIKATHENE L705" manufactured by Sumitomo Chemical Co., Ltd.) was melted using an extruder, the melt was extruded by a T-die method, and the extrudate was biaxially stretched using a cooling roll to obtain an LDPE substrate (thickness 110 μm).

[0589] <Preparation of Adhesive Layer>

[0590] A non-energy ray-curable adhesive composition containing an acrylic resin ("ORIBAIN BPS 6367X" manufactured by TOYOCHEM CO., LTD.) (100 parts by mass) as an adhesive resin (I-1a) and a crosslinking agent ("BXX 5640" manufactured by TOYOCHEM CO., LTD.) (1 part by mass) was prepared.

[0591] Next, using a release film obtained by subjecting one side of a polyethylene terephthalate film to a release treatment by silicone treatment, the adhesive composition obtained above was applied to the release-treated surface of the release film and heated and dried at 100°C for 2 minutes to prepare a non-energy ray-curable adhesive layer (10 μm thick).

[0592] <Production of the middle layer>

[0593] At room temperature, ethylene-vinyl acetate copolymer (EVA, weight-average molecular weight of 30,000, content of structural units derived from vinyl acetate of 25 mass %) (15 g) is dissolved in 85 g of tetrahydrofuran, and a siloxane compound (polydimethylsiloxane, "BYK-333" manufactured by BYK Japan KK., the number of structural units represented by the chemical formula "-Si(-CH3)2-O-" in one molecule is 45 to 230) (1.5 g) is added to the resulting solution and stirred to prepare a composition for forming an intermediate layer.

[0594] The intermediate layer forming composition obtained above was applied to the release treated surface of a release film made of polyethylene terephthalate film and dried by heating at 70°C for 5 minutes to prepare an intermediate layer (thickness 20 μm).

[0595] <Production of Film Adhesive>

[0596] A thermosetting adhesive composition is prepared containing a polymer component (a)-1 (100 parts by mass), an epoxy resin (b1)-1 (10 parts by mass), a thermosetting agent (b2)-1 (1.5 parts by mass), a filler (d)-1 (75 parts by mass), a coupling agent (e)-1 (0.5 parts by mass), a cross-linking agent (f)-1 (0.5 parts by mass) and an antistatic agent (g)-1 (5.6 parts by mass).

[0597] Next, a release film having one side of a polyethylene terephthalate film subjected to a release treatment by silicone treatment was used, and the adhesive composition obtained above was applied to the release-treated surface of the release film and heated and dried at 80°C for 2 minutes to prepare a thermosetting film-like adhesive (7 μm thick).

[0598] <Manufacturing of Sheet for Semiconductor Device Manufacturing>

[0599] The exposed surface of the adhesive layer obtained above, which is opposite to the side provided with the release film, was bonded to one surface of the substrate obtained above to prepare a first intermediate laminate with a release film (in other words, a support sheet with a release film).

[0600] The exposed surface of the film-like adhesive obtained above, which is opposite to the side having the release film, is bonded to the exposed surface of the intermediate layer obtained above, which is opposite to the side having the release film, thereby preparing a second intermediate layer laminate with a release film (a laminate of a release film, an intermediate layer, a film-like adhesive and a release film).

[0601] Then, for the second intermediate laminate with a release film, a punching process is performed from the release film on the intermediate layer side to the film adhesive using an annular cutting blade. The shape of the punching position is annular (the inner diameter of the annulus is 152.5mm, and the outer diameter is 186.75mm) from the center of the second intermediate laminate. Then the annular part (the laminate of the intermediate layer, the film adhesive and the release film) formed by the punching is removed. The removed annular part is equivalent to a part of the groove of the semiconductor device manufacturing sheet. The inner side of the removed annular part is equivalent to the label portion of the semiconductor device manufacturing sheet. Thus, a second intermediate laminate with a release film is processed by making the film adhesive (thickness 7μm) with a plane shape of a circle (diameter 305mm), the intermediate layer (thickness 20μm) and the release film in turn stacked along their thickness direction.

[0602] Next, the release film is removed from the release film-attached first intermediate laminate (support sheet) obtained above to expose one surface of the pressure-sensitive adhesive layer.

[0603] Furthermore, the circular release film was removed from the second intermediate layer laminated product with a release film obtained above, so that one surface of the intermediate layer was exposed.

[0604] Next, the newly generated exposed surface of the adhesive layer in the first intermediate laminate is bonded to the newly generated exposed surface of the intermediate layer in the second intermediate laminate. For the substrate, adhesive layer (i.e., support sheet), intermediate layer and film adhesive in the laminate thus obtained, a circular (diameter of 370 mm) cutting blade (the inner diameter of the ring is 370 mm) is used to perform punching from the substrate side in a manner that the planar shape of them (support sheet) is circular (diameter of 370 mm) and concentric with the circular film adhesive and intermediate layer. Remove the annular portion (laminate of substrate, adhesive layer, intermediate layer and film adhesive) formed by punching. The removed annular portion is equivalent to a portion of the groove of the semiconductor device manufacturing sheet. The outer side of the annular portion is equivalent to the outer periphery of the semiconductor device manufacturing sheet.

[0605] Thus, a sheet for manufacturing a semiconductor device having a label portion and a peripheral portion is obtained, in which a substrate (thickness 110 μm), an adhesive layer (thickness 10 μm), an intermediate layer (thickness 20 μm) and a film-like adhesive (thickness 7 μm) are stacked in sequence along their thickness direction on a release film.

[0606] <<Evaluation of Sheets for Semiconductor Device Manufacturing>>

[0607] <Calculation of the Ratio of Silicon Concentration on the Film-Like Adhesive Side of the Intermediate Layer>

[0608] During the manufacturing process of the above-mentioned semiconductor device manufacturing sheet, the exposed surface of the intermediate layer before lamination with the adhesive layer is analyzed by XPS to measure the concentrations (atomic %) of carbon (C), oxygen (O), nitrogen (N) and silicon (Si), and the ratio (%) of the silicon concentration to the total concentration of carbon, oxygen, nitrogen and silicon is calculated based on the measured values.

[0609] XPS analysis was performed using an X-ray photoelectron spectroscopy analyzer ("Quantra SXM" manufactured by ULVAC, Inc.) with an irradiation angle of 45° and an X-ray beam diameter of The results were carried out under the condition of an output of 4.5 W. The results are shown in the column "Concentration ratio (%) of the element in the intermediate layer" in Table 1 together with the concentration ratio (%) of other elements.

[0610] <Evaluation of the Effect of Suppressing Chip Generation During Blade Cutting>

[0611] [Manufacturing of Silicon Chip Set with Film Adhesive]

[0612] The release film in the sheet for producing a semiconductor device obtained above is removed.

[0613] A silicon wafer (300 mm in diameter and 75 μm in thickness) whose back side was ground by dry polishing was used, and a tape laminating machine ("Adwill RAD2500" manufactured by Lintec Corporation) was used to heat the semiconductor device manufacturing sheet to 60°C and to attach it to the back side (ground side) of the silicon wafer through its film adhesive. Thus, a laminated product consisting of a substrate, an adhesive layer, an intermediate layer, a film adhesive, and a silicon wafer stacked in sequence along their thickness directions (a laminated product consisting of the laminated sheet, the film adhesive, and the silicon wafer stacked in sequence along their thickness directions) was obtained.

[0614] Next, a region near the peripheral portion where no intermediate layer is provided on the first surface of the adhesive layer in the laminate (the non-laminated region) is fixed to a wafer dicing ring frame.

[0615] Next, the silicon wafer was divided by dicing using a dicing device ("DFD6361" manufactured by DISCO Corporation), and the film adhesive was cut at the same time to obtain 8 mm-sized wafers.

[0616] × 8mm silicon chip. The cutting at this time is carried out in the following manner: the rotation speed of the blade is set to 30000rpm and the moving speed of the blade is set to 30mm / second. For the semiconductor device manufacturing sheet, the blade is cut into the middle area of ​​the intermediate layer from the attached surface of the film adhesive of the silicon wafer (that is, the entire area in the thickness direction of the film adhesive and the area from the surface of the film adhesive side of the intermediate layer to the middle). As a blade, "Z05-SD2000-D1-90 CC" manufactured by DISCO Corporation is used.

[0617] Thus, a silicon chip group with film adhesive is obtained, in which a plurality of silicon chips with film adhesive are arranged and fixed to the intermediate layer in the laminate sheet via the film adhesive therebetween, and include silicon chips and the cut film adhesive provided on the back surface thereof.

[0618] [Evaluation of the effect of suppressing chip generation]

[0619] The silicon chip group with the film-like adhesive was observed from the upper side of the silicon chip using a digital microscope ("VH-Z100" manufactured by KEYENCE CORPORATION) to confirm whether or not cutting chips were generated. The case where no cutting chips were generated was judged as "A", and the case where cutting chips were generated even in a small amount was judged as "B". The results are shown in Table 1.

[0620] <Evaluation of Cutting Properties of Film Adhesive During Expansion>

[0621] [Manufacturing of Silicon Chip Set with Film Adhesive]

[0622] A silicon wafer having a circular planar shape with a diameter of 300 mm and a thickness of 775 μm was used, and a back grinding tape (“Adwill E-3100TN” manufactured by LINTEC Corporation) was attached to one surface of the silicon wafer.

[0623] Next, a laser irradiation device ("DFL73161" manufactured by DISCO Corporation) was used to irradiate laser light in a manner focused on a focal point set inside the silicon wafer, thereby forming a modified layer inside the silicon wafer. At this time, the focal point was set so that a plurality of silicon chips of 8 mm × 8 mm in size could be obtained from the silicon wafer. In addition, the silicon wafer was irradiated with laser light from the other side of the silicon wafer (the side to which the back grinding tape was not attached).

[0624] Next, the other surface of the silicon wafer is ground using a grinder, thereby making the thickness of the silicon wafer 30 μm, and at the same time, by using the force applied to the silicon wafer during grinding, the silicon wafer is divided at the location where the modified layer is formed to form a plurality of silicon chips. Thus, a silicon chip group is obtained in which a plurality of silicon chips are neatly arranged and fixed on the back grinding tape.

[0625] Next, a tape laminating machine ("Adwill RAD2500" manufactured by LINTEC Corporation) was used to heat the semiconductor device manufacturing sheet obtained above to 60°C and to adhere the film-like adhesive therein to the other surface (in other words, the polished surface) of all the silicon chips (silicon chip group).

[0626] Next, the region near the peripheral portion where no intermediate layer is provided on the first surface of the adhesive layer in the sheet for manufacturing a semiconductor device attached to the silicon chip group (the non-laminated region) is fixed to a wafer dicing ring frame.

[0627] Next, the back grinding tape is removed from the fixed silicon chip group. Then, a fully automatic chip splitter ("DDS2300" manufactured by DISCO Corporation) is used to expand the semiconductor device manufacturing sheet in a direction parallel to its surface while cooling it in an environment of 0°C, thereby cutting the film adhesive along the periphery of the silicon chip. At this time, the peripheral edge of the semiconductor device manufacturing sheet is fixed, and the area of ​​the semiconductor device manufacturing sheet stacked with the intermediate layer and the film adhesive is pushed up only 15 mm in height from the substrate side of the semiconductor device manufacturing sheet, thereby expanding.

[0628] Thus, a silicon chip group with film-like adhesive is obtained in which a plurality of silicon chips with film-like adhesive are arranged and fixed on the intermediate layer, each of the silicon chips and the cut film-like adhesive provided on the other surface (polished surface) of the silicon chips.

[0629] Next, after temporarily releasing the expansion of the semiconductor device manufacturing sheet, the laminate (i.e., the laminate) formed by stacking the substrate, the adhesive layer, and the intermediate layer is expanded in a direction parallel to the first surface of the adhesive layer at room temperature. Further, while maintaining the expanded state, the peripheral portion of the silicon chip on which the film-shaped adhesive is not placed in the laminate is heated. Thus, the peripheral portion is contracted, and the incision width between adjacent silicon chips in the laminate is maintained at a constant value or above.

[0630] [Evaluation of Cutting Properties of Film Adhesive]

[0631] When manufacturing the silicon chip set with the film-like adhesive, the silicon chip set with the film-like adhesive obtained above was observed from above the silicon chip side using a digital microscope ("VH-Z100" manufactured by KEYENCE CORPORATION). Then, the number of the cut lines of the film-like adhesive that were not actually formed and the number of the cut lines that were not completely formed among the multiple cut lines of the film-like adhesive extending in one direction and the multiple cut lines of the film-like adhesive extending in a direction orthogonal to the direction that should be formed when assuming that the film-like adhesive is normally cut by the expansion of the semiconductor device manufacturing sheet was confirmed, and the cutability of the film-like adhesive was evaluated according to the following evaluation criteria.

[0632] The results are shown in Table 1.

[0633] (Evaluation Criteria)

[0634] A: The total number of cut lines of the film-like adhesive that was not actually formed and the cut lines of the film-like adhesive that was not completely formed was 5 or less.

[0635] B: The total number of cut lines of the film-like adhesive that was not actually formed and the cut lines of the film-like adhesive that was not completely formed was 6 or more.

[0636] <Evaluation of Suppression of Scattering of Film Adhesive>

[0637] When evaluating the cutting property of the film adhesive, the silicon chip group with the film adhesive was visually observed from the upper side of the silicon chip side of the silicon chip group with the film adhesive. In addition, it was confirmed whether the film adhesive after cutting was scattered on the circuit formation surface of the silicon chip after expansion, and the scattering suppression property of the film adhesive was evaluated according to the following evaluation criteria. The results are shown in Table 1.

[0638] (Evaluation Criteria)

[0639] A: The number of silicon chips where the film adhesive was observed to be attached to the circuit formation surface was 0.

[0640] B: The number of silicon chips where the film adhesive was observed to be attached to the circuit formation surface was one or more.

[0641] <Evaluation of Cracks in Intermediate Layer>

[0642] When evaluating the cutting property of the film-like adhesive, a digital microscope ("VH-Z100" manufactured by Keyence Corporation) was used to observe the silicon chip group with the film-like adhesive from the upper side of the silicon chip side of the silicon chip group with the film-like adhesive. In addition, it was confirmed whether cracks were generated in the middle layer after expansion, and the cracks in the middle layer were evaluated according to the following evaluation criteria. The results are shown in Table 1.

[0643] (Evaluation Criteria)

[0644] A: The number of silicon chips with the film-like adhesive in which cracks in the intermediate layer were observed was 0.

[0645] B: The number of silicon chips with the film-like adhesive in which cracks in the intermediate layer were observed was one or more.

[0646] <Evaluation of Pickup Properties of Silicon Chip with Film Adhesive After Extension>

[0647] After the evaluation of the cutting property of the above-mentioned film-like adhesive, a silicon chip group with a film-like adhesive and a solid crystal device ("PU100" manufactured by FASFORD TECHNOLOGY CO., LTD.) were used to pick up the silicon chip with a film-like adhesive from the middle layer in the laminated sheet under the conditions of a push-up height of 250 μm, a push-up speed of 5 mm / s, and a push-up time of 500 ms. In addition, the situation in which all silicon chips with a film-like adhesive can be picked up normally is evaluated as "A", and the situation in which more than one silicon chip with a film-like adhesive cannot be picked up normally is evaluated as "B". The results are shown in Table 1.

[0648] <Measurement of T-peel Strength between Intermediate Layer and Film Adhesive>

[0649] The release film on the semiconductor device manufacturing sheet obtained above is removed.

[0650] The entire exposed surface of the film-like adhesive in the semiconductor device manufacturing sheet thus produced was bonded to the adhesive surface of an adhesive tape having a polyethylene terephthalate layer ("PET50(A)PL-8LK" manufactured by Lintec Corporation), and the resulting laminate was cut into a size of 50 mm×100 mm to prepare a test piece.

[0651] For the test piece, according to JIS K6854-3, the laminate of the substrate, the adhesive layer and the intermediate layer (i.e., the laminate) and the laminate of the film adhesive and the adhesive tape are pulled apart, so that the test piece is peeled in a T-shaped manner, and the maximum value of the peeling force (mN / 50mm) measured at this time is taken as the T-type peel strength. At this time, the measurement is carried out under the conditions of a peeling speed of 50mm / min, 23°C, and a humidity of 50%RH. The results are shown in Table 1.

[0652] <<Manufacturing of the roll>>

[0653] The label portion and the peripheral portion of the laminated body of the substrate, the adhesive layer, the intermediate layer and the film-like adhesive in the semiconductor device manufacturing sheet manufactured above are continuously arranged in a row at a predetermined position (the distance between the centers of the circular film-like adhesive of the label portion is 378 mm) on a long strip of release film (length 100 m), and the sheet is wound into a roll in such a manner that the side of the sheet for manufacturing a semiconductor device laminated with the substrate faces the core side, thereby manufacturing a roll. The winding direction is the length direction of the long strip of release film.

[0654] [Evaluation of the Generation of Winding Marks in a Roll of a Sheet for Manufacturing Semiconductor Devices]

[0655] For the semiconductor device manufacturing sheets counted from the core to the 2nd to 5th sheets in the roll manufactured as described above, it was confirmed by naked eyes whether a circular winding mark of the label portion (a shape mark caused by the step difference of the circular film adhesive of the label portion and the intermediate layer) was generated on the surface of the film adhesive according to the following evaluation criteria. The results are shown in Table 1.

[0656] (Evaluation Criteria)

[0657] A: No winding trace was confirmed.

[0658] B: Winding traces were confirmed.

[0659] [Example 2]

[0660] The semiconductor device manufacturing sheet and roll were produced and evaluated in the same manner as in Example 1 except that the coating amount of the intermediate layer forming composition was reduced so that the thickness of the intermediate layer was 3 μm instead of 20 μm.

[0661] [Example 3]

[0662] The semiconductor device manufacturing sheet and roll were produced and evaluated in the same manner as in Example 1 except that the coating amount of the intermediate layer forming composition was increased so that the thickness of the intermediate layer was 100 μm instead of 20 μm.

[0663] [Example 4]

[0664] The same method as in Example 1 was used to produce and evaluate a sheet and a roll for producing a semiconductor device, except that the siloxane compound was not added and the amount of the ethylene-vinyl acetate copolymer used was 16.5 g instead of 15 g (in other words, the siloxane compound was replaced with the same mass of the ethylene-vinyl acetate copolymer so that only the ethylene-vinyl acetate copolymer was dissolved in tetrahydrofuran). The results are shown in Table 1. The description of "-" in the column of additives in Table 1 means that the additive was not used.

[0665] [Example 5]

[0666] The sheet and roll for manufacturing semiconductor devices were manufactured and evaluated in the same manner as in Example 1, except that the shape of the punching position was changed to a circular ring (the inner diameter of the circular ring was 162.5 mm and the outer diameter was 186.75 mm) from the center of the second intermediate laminate when the punching process was performed on the second intermediate laminate, and the diameter of the plane shape of the manufactured film-like adhesive and the intermediate layer was changed from 305 mm to 315 mm. The results are shown in Table 1.

[0667] [Reference Example 1]

[0668] A semiconductor device manufacturing sheet and roll were manufactured and evaluated in the same manner as in Example 1 except that not only the annular groove portion but also the outer peripheral portion outside the groove was removed after the second intermediate laminate was punched, and no outer peripheral portion was formed.

[0669] The results are shown in Table 1.

[0670] [Comparative Example 1]

[0671] The same method as in Example 1 was used to produce and evaluate a sheet and a roll for manufacturing a semiconductor device, except that when preparing the intermediate layer-forming composition, an ethylene-vinyl acetate copolymer (EVA, weight average molecular weight 200,000, content of structural units derived from vinyl acetate 25% by mass) of the same mass was used instead of the ethylene-vinyl acetate copolymer, and the coating amount of the intermediate layer-forming composition was increased so that the thickness of the intermediate layer was 80 μm instead of 20 μm. The results are shown in Table 1.

[0672] [Comparative Example 2]

[0673] A sheet and a roll for manufacturing a semiconductor device were manufactured and evaluated in the same manner as in Example 1, except that an ethylene-vinyl acetate copolymer (EVA, weight average molecular weight 200,000, content of structural units derived from vinyl acetate 25% by mass) of the same mass was used instead of the ethylene-vinyl acetate copolymer when preparing the intermediate layer forming composition.

[0674] The results are shown in Table 1.

[0675] [Comparative Example 3]

[0676] Except that no intermediate layer was provided, a sheet and a roll for manufacturing a semiconductor device were produced and evaluated in the same manner as in Example 1. The results are shown in Table 1. "-" in the column of additives in Table 1 means that no intermediate layer was provided.

[0677]

[0678] The above results show that the occurrence of winding marks is suppressed in the rolls of the semiconductor device manufacturing sheets of Examples 1 to 5 in which the outer peripheral portion is provided outside the label portion.

[0679] Furthermore, the semiconductor device manufacturing sheets of Examples 1 to 5 suppressed generation of cutting chips during blade dicing and suppressed failure of cutting of the film adhesive during expansion, and were excellent in semiconductor wafer division suitability.

[0680] In the semiconductor device manufacturing sheets of Examples 1 to 5, the weight average molecular weight of the ethylene-vinyl acetate copolymer contained as a main component in the intermediate layer in the semiconductor device manufacturing sheet was 30,000.

[0681] In addition, it is believed that the reason why the film adhesive has poor cutting properties when expanding in Comparative Example 2 is that the weight average molecular weight is large and the peel strength is large (it is believed that if the peel strength is large, the film adhesive will follow the intermediate layer). In this regard, the peeling force of Examples 1 to 2, Examples 4 to 5 and Reference Example 1 is high, and it is speculated that the cutting properties are good due to the low weight average molecular weight.

[0682] On the other hand, in Comparative Examples 1 and 2 having a weight average molecular weight of 200,000, generation of cutting chips could not be suppressed during blade dicing, and the semiconductor wafer division suitability was poor.

[0683] In Comparative Example 3, no intermediate layer was provided, and it is considered that the insert reached the base material, and thus chips from the base material were generated.

[0684] In the semiconductor device sheets of Examples 1 to 4, the difference between the diameter of the film-like adhesive in the label portion and the diameter of the semiconductor wafer was 10 mm or less (5 mm), and the scattering suppression effect of the film-like adhesive was good.

[0685] In Example 5, the difference between the maximum width of the film-like adhesive of the label portion and the maximum width of the semiconductor wafer was larger than 10 mm (15 mm). In Example 5, the scattering suppression property of the film-like adhesive was poor.

[0686] In the semiconductor device sheets of Example 1 and Examples 3 to 5 in which the thickness of the intermediate layer was 15 μm or more and 80 μm or less, the generation of cracks in the intermediate layer was suppressed.

[0687] The semiconductor device sheets of Examples 1, 2, and 5 were excellent in pickup properties of the silicon chip with the film-like adhesive after expansion.

[0688] In the semiconductor device manufacturing sheet in which the intermediate layer contains the siloxane compound, for the semiconductor device manufacturing sheets of Examples 1 to 2 and 5, the concentration ratio of the silicon in the intermediate layer based on X-ray photoelectron spectroscopy is 1 to 20%, and the T-type peel strength is 100 mN / 50 mm or less, which is moderately low, and the pickup property is excellent. In Examples 1 to 2 and 4 to 5, these evaluation results are consistent with the evaluation results of the pickup property of the silicon chip with the film-like adhesive.

[0689] For the semiconductor manufacturing sheet of Example 3, it is considered that although the T-peel strength is less than 60mN / 50mm, which is moderately low, the thickness of the intermediate layer is as thick as 100μm. Therefore, under the pickup evaluation conditions of the embodiment, the intermediate layer with a certain thickness reduces the upward thrust, resulting in poor pickup.

[0690] In addition, the reason why the T-peel strength of the semiconductor device manufacturing sheet of Example 3 is lower than the T-peel strength of the semiconductor device manufacturing sheet of Example 1 is presumed to be as follows. The ratio (mass %) of the content of the siloxane compound to the total mass of the intermediate layer is the same in the semiconductor device manufacturing sheets of Example 1 and Example 3. However, the content (mass part) of the siloxane compound in the intermediate layer of Example 3 is greater than the content (mass part) of the siloxane compound in the intermediate layer of Example 1, corresponding to the thickness of the intermediate layer. In addition, the siloxane compound is likely to be unevenly present on both surfaces of the intermediate layer and in the vicinity thereof.

[0691] Therefore, it is considered that the amount of the siloxane compound unevenly present on both surfaces of the intermediate layer and in the vicinity thereof is also greater in Example 3 than in Example 1.

[0692] In addition, in all analyses, nitrogen was not detected when XPS analysis was performed on the exposed surface of the intermediate layer.

[0693] The semiconductor device manufacturing sheets of Comparative Examples 1 and 2 differed only in the thickness of the intermediate layer, and the relationship between the intermediate layer and the film-like adhesive in Comparative Examples 1 and 2 showed the same tendency as that of Examples 1 and 2.

[0694] Each configuration and combination in each embodiment is only an example, and addition, omission, substitution and other changes may be made to the configuration without departing from the scope of the present invention. In addition, the present invention is not limited to each embodiment, but only to the scope of the claims.

[0695] Industrial Applicability

[0696] The present invention can be used in the manufacture of semiconductor devices.

[0697] Description of Reference Numerals

[0698] 101: semiconductor device manufacturing sheet; 1: support sheet; 10: laminated sheet; 11: base material; 12: adhesive layer; 13: intermediate layer; 13a: first surface of intermediate layer; 14: film adhesive; 15: release film; 16: release film; 30: label portion; 32: peripheral portion; 34: groove; 35: first groove; 36: second groove; H 30 H: The thickness of the semiconductor device manufacturing sheet of the label portion; 32 W: The thickness of the semiconductor device manufacturing sheet at the periphery; 13 : The width of the middle layer; W 14 : Width of film adhesive; W 34 : Groove width; 102: Second intermediate laminate; 103: Second intermediate laminate processed product; 104: First intermediate laminate; 105: Laminated product; C1, C2, C3, C4: Cutouts; 110: Roll; P 30 : unit; 8: back grinding tape; 9': semiconductor wafer; 90': modified layer; 9a': circuit forming surface of semiconductor wafer; 9b': back side of semiconductor wafer; 901: semiconductor chip group; 9: semiconductor chip; 9a: circuit forming surface of semiconductor chip; 9b: back side of semiconductor chip; 140: film adhesive after cutting; 910: semiconductor chip group with film adhesive; 914: semiconductor chip with film adhesive; E1: direction of expansion.

Claims

1. A sheet for manufacturing a semiconductor device, comprising a label portion including a portion to be attached to a semiconductor wafer or a semiconductor chip and an outer peripheral portion provided on at least a portion closer to the outside than the label portion, The label portion and the peripheral portion include a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive, and the semiconductor device manufacturing sheet is formed by sequentially stacking the adhesive layer, the intermediate layer, the film-like adhesive, and a release film on the substrate. A groove where the intermediate layer and the film-like adhesive are not laminated is provided between the label portion and the outer peripheral portion. The intermediate layer contains a non-silicone resin having a weight average molecular weight of 100,000 or less as a main component, When the surface of the intermediate layer on the film-like adhesive side was analyzed by X-ray photoelectron spectroscopy, the ratio of the concentration of silicon to the total concentration of carbon, oxygen, nitrogen, and silicon was 1 to 20%.

2. A sheet for manufacturing a semiconductor device, comprising a label portion including a portion to be attached to a semiconductor wafer or a semiconductor chip and an outer peripheral portion provided on at least a portion closer to the outside than the label portion, The label portion and the peripheral portion include a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive, and the semiconductor device manufacturing sheet is formed by sequentially stacking the adhesive layer, the intermediate layer, the film-like adhesive, and a release film on the substrate. A groove where the intermediate layer and the film-like adhesive are not laminated is provided between the label portion and the outer peripheral portion. The intermediate layer contains a non-silicone resin having a weight average molecular weight of 100,000 or less as a main component, The intermediate layer contains ethylene vinyl acetate copolymer and a siloxane compound as the non-silicone resin, In the intermediate layer, the content of the ethylene vinyl acetate copolymer is 90 to 99.99% by mass relative to the total mass of the intermediate layer. In the intermediate layer, the content of the siloxane compound is 0.01 to 10% by mass relative to the total mass of the intermediate layer.

3. The sheet for manufacturing a semiconductor device according to claim 1 or 2, wherein: A difference between a maximum value of the thickness of the semiconductor device manufacturing sheet in the label portion and a maximum value of the thickness of the semiconductor device manufacturing sheet in the peripheral portion is 3 μm or less.

4. The sheet for manufacturing a semiconductor device according to claim 1 or 2, wherein: The maximum width of the film-like adhesive of the label portion in a direction parallel to the attachment surface to the semiconductor wafer or semiconductor chip is 150 to 160 mm, 200 to 210 mm, or 300 to 310 mm.

5. The sheet for manufacturing a semiconductor device according to claim 1 or 2, wherein: The intermediate layer of the label portion has a thickness of 15 μm or more and 80 μm or less.

6. The sheet for manufacturing a semiconductor device according to claim 1 or 2, wherein: In the intermediate layer, the content of the non-silicone resin is 50% by mass or more based on the total mass of the intermediate layer.

7. The sheet for manufacturing a semiconductor device according to claim 1, wherein The non-silicone resin contains ethylene vinyl acetate copolymer.

8. The sheet for manufacturing a semiconductor device according to claim 1, wherein The intermediate layer contains ethylene vinyl acetate copolymer and a siloxane compound as the non-silicone resin, In the intermediate layer, the content of the ethylene vinyl acetate copolymer is 90 to 99.99% by mass relative to the total mass of the intermediate layer. In the intermediate layer, the content of the siloxane compound is 0.01 to 10% by mass relative to the total mass of the intermediate layer.

9. The sheet for manufacturing a semiconductor device according to claim 1 or 2, wherein: The sheet for manufacturing a semiconductor device is used for cold expansion for cutting the film-like adhesive by expanding the sheet for manufacturing a semiconductor device in a direction parallel to a plane of the sheet for manufacturing a semiconductor device at a temperature lower than room temperature.

10. The sheet for manufacturing a semiconductor device according to claim 1 or 2, wherein: The sheet for manufacturing a semiconductor device is a roll body in which the label portion and the outer peripheral portion are provided on the long release film and the sheet is wound with the label portion and the outer peripheral portion as the inner side.

11. A method for producing a sheet for producing a semiconductor device according to any one of claims 1 to 10, comprising: A lamination step of laminating a first intermediate laminate including the substrate and the adhesive layer and a second intermediate laminate including the intermediate layer and the film-like adhesive; and A processing step of removing a portion of the film-like adhesive of the second intermediate laminate by punching out the film-like adhesive to form the label portion, the groove, and the outer peripheral portion.

12. A method for manufacturing a semiconductor chip with a film-like adhesive, comprising: A step of laminating a semiconductor wafer or a semiconductor chip on one side of the film-like adhesive of the sheet for manufacturing a semiconductor device according to any one of claims 1 to 10 to obtain a laminated body; and A step of cutting the film-like adhesive or the semiconductor wafer and the film-like adhesive along the outer periphery of the semiconductor chip to obtain a semiconductor chip with the film-like adhesive.

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