Control program for charging and automatic calibration of wafer type sensor, container and semiconductor device manufacturing apparatus

Abstract

The present invention provides a control device for charging and automatic calibration of a wafer-type sensor, a control program executed by the control device, a wafer-type sensor storage device, a wafer-type sensor charging device, and a semiconductor device manufacturing apparatus. The control program is executed by a control device loaded with a processor, which monitors a semiconductor device manufacturing apparatus and components thereof using a wafer-type sensor, and monitors a battery level of the wafer-type sensor.

Description

TECHNICAL FIELD

[0001] The present application relates to a wafer-type sensor control device, a control program executed by the control device, a wafer-type sensor storage device (container), a wafer-type sensor charging device (load port module), and a semiconductor device manufacturing apparatus having the wafer-type sensor charging device. More particularly, the present application relates to a control device, a control program, a container, a load port module, and a semiconductor device manufacturing apparatus for charging and automatic calibration of a wafer-type sensor. BACKGROUND

[0002] A semiconductor device manufacturing process can be continuously performed in a semiconductor device manufacturing apparatus, and can be classified into a front process and a back process. The semiconductor manufacturing apparatus can be provided within a space defined as a FAB (Fabrication Plant) to manufacture semiconductor devices.

[0003] The front process refers to a process of forming a circuit pattern on a substrate (e.g., a wafer) to complete a chip. Such a front process can include a deposition process of forming a thin film on a substrate, a photo lithography process of transferring a photo resist to a thin film using a photo mask, an etching process of selectively removing unnecessary portions using a chemical substance or a reactive gas to form a desired circuit pattern on a substrate, an ashing process of removing a photo resist remaining after etching, an ion implantation process of implanting ions into a portion connected to a circuit pattern to make it have an electronic device characteristic, a cleaning process of removing a contamination source on a substrate, etc.

[0004] The back process refers to a process of evaluating the performance of a product completed through the front process. The back process can include a substrate inspection process of inspecting whether each chip on a substrate works to screen good products and bad products, a package process of cutting and separating each chip to make it have a shape of a product through dicing, die bonding, wire bonding, molding, marking, etc., a final inspection process of finally inspecting the characteristics and reliability of a product through an electrical characteristic inspection, a burn-in inspection, etc. SUMMARY

[0005] In a semiconductor device manufacturing process, an etching chamber can be used to form a desired circuit pattern on a substrate. Such an etching chamber can etch a substrate using plasma.

[0006] In the case of using plasma, an etching chamber can provide an electrostatic chuck (ESC) as a substrate support unit to use the electrostatic chuck as a lower electrode. At this time, in order to prevent the side surface of the electrostatic chuck from being damaged by plasma and to improve the etching efficiency of the substrate, a ring assembly can be formed around the electrostatic chuck.

[0007] However, the ring assembly is a consumable that is gradually etched as the use time increases, and thus, if it is not periodically position-corrected or replaced, it can adversely affect the substrate processing process.

[0008] The technical problem to be solved by the present application is to provide an auto-calibration system for monitoring a semiconductor device manufacturing apparatus and components thereof using a wafer-type sensor, a control device included in the system, and a control program executed by the control device.

[0009] In addition, the technical problem to be solved by the present application is to provide an auto-calibration system for automatically charging the wafer-type sensor to smoothly use it in an emergency, a wafer-type sensor storage device (container) included in the system, a wafer-type sensor charging device (load port module), and a semiconductor device manufacturing apparatus.

[0010] The technical problem to be solved by the present application is not limited to the above-mentioned technical problems, and other technical problems not mentioned will be clearly understood by those skilled in the art through the following description.

[0011] One aspect of the control program of the present application for solving the above technical problem is executed by a control device loaded with a processor, wherein the control program monitors a semiconductor device manufacturing apparatus and components thereof using a wafer-type sensor, and the control program monitors a battery remaining amount of the wafer-type sensor.

[0012] The control program can monitor whether a consumable component is centered in a substrate processing device.

[0013] The control program can monitor whether the consumable component is centered when the consumable component is newly replaced.

[0014] The wafer-type sensor can measure a gap between the consumable component and a chuck.

[0015] If the consumable part is not centered, the control program can correct the position of the consumable part using a transfer robot based on correction information related to centering.

[0016] If the battery level of the wafer type sensor is less than a reference value, the control program can charge the wafer type sensor using a battery charging device provided in a load port module.

[0017] When the wafer type sensor is charged, the control program can load the wafer type sensor in a container.

[0018] When the wafer type sensor is charged, the control program can place the container in which the wafer type sensor is loaded on the load port module.

[0019] If the battery level of the wafer type sensor is less than a reference value, the control program can monitor a semiconductor device manufacturing apparatus and components thereof after charging the wafer type sensor.

[0020] One aspect of a wafer type sensor storage device (container) according to the present invention to solve the above technical problem, the container loads a wafer type sensor, and the container charges the wafer type sensor using a load port module having a battery charging device.

[0021] When the wafer type sensor is loaded into the container, the container can charge the wafer type sensor.

[0022] The wafer type sensor can be loaded in the container while being charged.

[0023] The container can include a plurality of slots provided in an up-and-down direction inside the container.

[0024] The container can include a first slot provided inside the container, and a second slot provided below the first slot, wherein different articles are loaded in the first slot and the second slot.

[0025] The wafer type sensor can be loaded in the first slot.

[0026] The container can charge the wafer type sensor based on a monitoring result of a battery level of the wafer type sensor.

[0027] The container can be a FOUP (Front Opening Unified Pod).

[0028] The container can charge the wafer type sensor using at least one of a magnetic resonance method and an electromagnetic induction method.

[0029] One aspect of a wafer type sensor charging device (load port module) of the present invention for solving the above-described technical problem has a battery charging device, and charges a wafer type sensor loaded in a container using the battery charging device.

[0030] The battery charging device can include a power supply module that supplies first power, a power conversion module that is disposed inside the load port module and converts the first power into second power, and a power output terminal that is disposed at an upper portion of the load port module and is connected with a connection module of the container.

[0031] The battery charging device can charge the wafer type sensor when the container is seated at the upper portion of the load port module.

[0032] One aspect of a semiconductor device manufacturing apparatus of the present invention for solving the above-described technical problem includes a load port module that is disposed as a front end module, an index module that is disposed adjacent to the load port module and has a first transfer robot that transfers a substrate loaded in a container on the load port module, process chambers that process the substrate and are disposed as a plurality of chambers, and a transfer chamber that is disposed adjacent to the process chambers and has a second transfer robot that carries an unprocessed substrate carried by the first transfer robot into the process chambers or carries a processed substrate out of the process chambers, wherein the load port module has a battery charging device and charges a wafer type sensor loaded in the container using the battery charging device.

[0033] The load port module can be a plurality of modules.

[0034] Each of the containers seated on each of the load port modules can load different articles from each other.

[0035] Any one of the containers can load the wafer type sensor, and another container can load the substrate.

[0036] The plurality of process chambers can be arranged according to any one structure of a cluster platform, a quad platform, and an inline platform.

[0037] Particular matters of other embodiments are included in the detailed description and the drawings. BRIEF DESCRIPTION OF DRAWINGS

[0038] Figure 1 FIG. 1 is a diagram schematically showing an internal configuration of an automatic calibration system according to an embodiment of the present invention.

[0039] Figure 2FIG. 1 is a diagram schematically showing an internal structure of a substrate processing apparatus constituting an automatic calibration system according to an embodiment of the present application.

[0040] Figure 3 FIG. 2 is a diagram schematically showing an internal structure of a wafer type sensor constituting an automatic calibration system according to an embodiment of the present application.

[0041] Figure 4 FIG. 3 is a first example diagram for explaining an operation of a wafer type sensor constituting an automatic calibration system according to an embodiment of the present application.

[0042] Figure 5 FIG. 4 is a second example diagram for explaining an operation of a wafer type sensor constituting an automatic calibration system according to an embodiment of the present application.

[0043] Figure 6 FIG. 5 is a first flowchart for exemplarily explaining a method of operating a control device constituting an automatic calibration system according to an embodiment of the present application.

[0044] Figure 7 FIG. 6 is a second flowchart for exemplarily explaining a method of operating a control device constituting an automatic calibration system according to an embodiment of the present application.

[0045] Figure 8 FIG. 7 is a third flowchart for exemplarily explaining a method of operating a control device constituting an automatic calibration system according to an embodiment of the present application.

[0046] Figure 9 FIG. 8 is a first example diagram schematically showing an internal structure of a storage device constituting an automatic calibration system according to an embodiment of the present application.

[0047] Figure 10 FIG. 9 is a second example diagram schematically showing an internal structure of a storage device constituting an automatic calibration system according to an embodiment of the present application.

[0048] Figure 11 FIG. 10 is a third example diagram schematically showing an internal structure of a storage device constituting an automatic calibration system according to an embodiment of the present application.

[0049] Figure 12 FIG. 11 is a diagram schematically showing an internal structure of a load port module constituting an automatic calibration system according to an embodiment of the present application.

[0050] Figure 13 FIG. 12 is an example diagram schematically showing a structure of a power supply output terminal of a load port module constituting an automatic calibration system according to an embodiment of the present application. Figure 12

[0051] Figure 14 ​is an explanatory view for explaining a storage method when a storage device constituting an automatic calibration system is not used according to an embodiment of the present application.

[0052] Figure 15 is an explanatory view according to a first embodiment of a semiconductor device manufacturing apparatus including a load port module.

[0053] Figure 16 is an explanatory view according to a second embodiment of a semiconductor device manufacturing apparatus including a load port module.

[0054] Figure 17 is an explanatory view according to a third embodiment of a semiconductor device manufacturing apparatus including a load port module.

[0055] Explanation of Reference Numerals

[0056] 100: automatic calibration system 110: substrate processing device

[0057] 120: wafer type sensor 130: control device

[0058] 140: storage device 150: charging device

[0059] 210: housing 220: substrate support unit

[0060] 221: susceptor 222: electrostatic chuck

[0061] 223: ring assembly 223a: focus ring

[0062] 223b: edge ring 224: heating member

[0063] 225: cooling member 230: plasma generating unit

[0064] 231: upper power source 232: lower power source

[0065] 240: showerhead unit 250: upper module

[0066] 251: antenna unit 260: chuck member

[0067] 270: consumable member 310: sensor module

[0068] 320: first communication module 330: storage module

[0069] 340: power source module 350: first control module

[0070] 710: cover member 720: first slot

[0071] 730: second slot 740: door member

[0072] 750: connection module 760: power transmission module

[0073] 770: second communication module 780: second control module

[0074] 810: container transfer device 820: loading port module

[0075] 820a: first loading port 820b: second loading port

[0076] 820c: third loading port 821: power supply module

[0077] 822: switch module 823: power conversion module

[0078] 824: power output terminal 840: rack

[0079] 900: semiconductor element manufacturing apparatus 910: index module

[0080] 911: first transfer robot 920: transition chamber

[0081] 930: transfer chamber 931: second transfer robot

[0082] 940: process chamber 950: container DETAILED DESCRIPTION

[0083] Hereinafter, preferred embodiments of the present application will be described in detail with reference to the accompanying drawings. Advantages and features of the present application and methods of achieving the advantages and features will become apparent by referring to the following detailed description of the embodiments taken in conjunction with the accompanying drawings, which Figure 1 illustrative embodiments disclosed below are merely provided for the purposes of public completeness and full disclosure of the present application and to give those skilled in the art a complete disclosure and conception of the scope of the present application, the present application is defined only by the scope of the claims. Throughout the specification, like drawing reference numerals refer to like constituent elements.

[0084] An element or layer is referred to as "on" or "above" another element or layer not only includes the case where it is directly on the other element or layer, but also includes the case where other layers or elements are interposed therebetween. In contrast, an element is referred to as "directly on" or "directly above" another element indicates the case where no other element or layer is interposed therebetween.

[0085] To easily describe the relative relationship of one element or a constituent element to another element or constituent element as shown in the drawings, spatial relative terms "below", "beneath", "lower", "above", "upper" and the like can be used. It should be understood that the spatial relative terms are terms that include the directions of the elements different from each other when used or operated, in addition to the directions shown in the drawings. For example, when the elements shown in the drawings are turned over, the element described as "below" or "beneath" another element can be located "above" the other element. Therefore, the exemplary term "below" can include both the downward and upward directions. The elements can also be oriented in another direction, and thus the spatial relative terms can be interpreted according to the orientation.

[0086] Although the terms "first", "second", and the like are used to describe various elements, constituent elements, and / or parts, the elements, constituent elements, and / or parts are obviously not limited by these terms. These terms are used only to distinguish one element, constituent element, and / or part from another element, constituent element, and / or part. Therefore, the first element, the first constituent element, or the first part mentioned below is obviously also the second element, the second constituent element, or the second part within the technical idea of the present application.

[0087] The terms used in the present specification are for the purpose of describing the embodiments and are not intended to limit the present application. In the present specification, the singular form also includes the plural form unless specifically mentioned in the sentence. "Comprises" and / or "comprising" used in the specification do not exclude the presence or addition of one or more other constituent elements, steps, operations, and / or elements in addition to the mentioned constituent elements, steps, operations, and / or elements.

[0088] If not otherwise defined, all terms used in the present specification (including technical and scientific terms) can be used in the meaning commonly understood by those of ordinary skill in the art to which the present application pertains. Also, unless particularly defined otherwise, the terms defined in generally used dictionaries can not be ideally or excessively interpreted.

[0089] Hereinafter, embodiments of the present application will be described in detail with reference to the accompanying drawings, and in describing the embodiments, the same or corresponding constituent elements are given the same reference numerals regardless of the drawings, and repetitive description thereof will be omitted.

[0090] The present invention relates to an Auto Teaching System for inspecting a semiconductor device manufacturing apparatus for manufacturing a semiconductor device and a component thereof. The Auto Teaching System according to the present invention can monitor the semiconductor device manufacturing apparatus and the component thereof using a wafer type sensor, and can automatically charge the wafer type sensor.

[0091] Specifically, the semiconductor device manufacturing apparatus and the component thereof can be monitored using a control device constituting the Auto Teaching System and a program executed by the control device, and the wafer type sensor can be automatically charged using a storage device and a charging device constituting the Auto Teaching System to be smoothly used in an emergency.

[0092] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings, etc.

[0093] Figure 1 FIG. 1 is a diagram schematically showing an internal configuration of an Auto Teaching System according to an embodiment of the present invention.

[0094] The Auto Teaching System 100 is applied to a semiconductor device manufacturing apparatus, and is a system for realizing Auto Teaching Full Automation.

[0095] According to Figure 1 , the Auto Teaching System 100 can include a substrate processing device 110, a wafer type sensor 120, a control device 130, a storage device 140, and a charging device 150.

[0096] The substrate processing device 110 is a device for processing a substrate (e.g., a wafer). For example, the substrate processing device 110 can be implemented by an etching process chamber for performing an etching process on a substrate, a cleaning process chamber for performing a cleaning process on a substrate, or the like.

[0097] When the substrate processing device 110 is implemented by the etching process chamber, the cleaning process chamber, or the like, as shown in Figure 2 , the substrate processing device 110 can include a housing 210, a substrate support unit 220, a plasma generating unit 230, and a showerhead unit 240.

[0098] Figure 2 FIG. 2 is a diagram schematically showing an internal configuration of a substrate processing device constituting the Auto Teaching System according to an embodiment of the present invention. The following description is made with reference to Figure 2 .

[0099] The substrate processing apparatus 110 can process the substrate W using a dry etching process and / or a dry cleaning process in a vacuum environment. For example, the substrate processing apparatus 110 can process the substrate W using a plasma process.

[0100] The housing 210 provides a space in which a plasma process is performed. The housing 210 can include an opening portion (not shown) provided at a sidewall of the housing 210 to serve as a passage for the substrate W to enter and exit.

[0101] The substrate support unit 220 can be provided at an inner lower side region of the housing 210 and can support the substrate W using electrostatic force. However, the present embodiment is not limited thereto. The substrate support unit 220 can also support the substrate W by various methods such as mechanical clamping, vacuum, etc.

[0102] In a case where the substrate W is supported using electrostatic force, the substrate support unit 220 can include a susceptor 221 and an electrostatic chuck (ESC) 222.

[0103] The electrostatic chuck 222 is a substrate support member that supports the substrate W disposed at an upper portion thereof using electrostatic force. Such an electrostatic chuck 222 can be made of a ceramic material and can be combined with the susceptor 221 to be fixed to the susceptor 221.

[0104] A ring assembly 223 is provided to surround an edge of the electrostatic chuck 222. Such a ring assembly 223 can be provided in a ring shape and configured to support an edge region of the substrate W. The ring assembly 223 can include a focus ring 223a and an edge ring 223b.

[0105] The focus ring 223a is formed at an inner side of the edge ring 223b and is provided to surround the electrostatic chuck 222. The focus ring 223a can be made of a silicon material and can concentrate ions generated in a plasma process on the substrate W.

[0106] The edge ring 223b is formed at an outer side of the focus ring 223a and is provided to surround the focus ring 223a. The edge ring 223b can be made of a quartz material and can be formed to prevent a side surface of the electrostatic chuck 222 from being damaged by plasma.

[0107] A heating member 224 and a cooling member 225 are provided so that a process temperature of the substrate W can be maintained when an etching process is performed in an inner portion of the housing 210. For example, the heating member 224 and the cooling member 225 can be provided at an inner portion of the electrostatic chuck 222 and an inner portion of the susceptor 221, respectively.

[0108] The plasma generating unit 230 functions to generate plasma from a gas remaining in a discharge space. Here, the discharge space refers to a space located at an upper portion of the substrate support unit 220 in the internal space of the housing 210.

[0109] The plasma generating unit 230 can generate plasma in the discharge space inside the housing 210 using an Inductively Coupled Plasma (ICP) source. In this case, the plasma generating unit 230 can use the antenna unit 251 provided to the upper module 250 as an upper electrode, and can use the electrostatic chuck 222 as a lower electrode.

[0110] However, the present embodiment is not limited thereto. The plasma generating unit 230 can also generate plasma in the discharge space inside the housing 210 using a Capacitively Coupled Plasma (CCP) source. In this case, the plasma generating unit 230 can use the shower head unit 240 as an upper electrode, and can use the electrostatic chuck 222 as a lower electrode.

[0111] The plasma generating unit 230 can include an upper electrode, a lower electrode, an upper power source 231, and a lower power source 232.

[0112] The upper power source 231 applies power to the upper electrode. The upper power source 231 can be provided to control characteristics of plasma. For example, the upper power source 231 can be provided to adjust Ion Bombardment Energy.

[0113] The lower power source 232 applies power to the lower electrode. The lower power source 232 can function as a plasma source to generate plasma, or can function to control characteristics of plasma together with the upper power source 231.

[0114] The shower head unit 240 can be provided inside the housing 210 to be opposed to the electrostatic chuck 222 in the up-and-down direction (third direction 30). The shower head unit 240 can have a plurality of gas feeding holes to feed gas to the inside of the housing 210, and can be provided to have a larger diameter than the electrostatic chuck 222. The shower head unit 240 can be made of a silicon material or a metal material.

[0115] In the above description, although it is described that the auto-teaching system 100 includes the substrate processing apparatus 110, in the present embodiment, the auto-teaching system 100 can include a semiconductor device manufacturing equipment instead of the substrate processing apparatus 110. The semiconductor device manufacturing equipment includes the substrate processing apparatus 110, which will be described later, and a process chamber constituting the semiconductor device manufacturing equipment can correspond to the substrate processing apparatus 110. On the other hand, in the present embodiment, the auto-teaching system 100 itself can be the semiconductor device manufacturing equipment.

[0116] Referring again to Figure 1 described above.

[0117] The wafer type sensor 120 is adapted to perform inspection on the semiconductor device manufacturing equipment and its components. Such wafer type sensor 120 can be adapted to perform auto-teaching on the semiconductor device manufacturing equipment and its components, monitoring of a robot for handling substrates in the semiconductor device manufacturing equipment (e.g., monitoring of vibration, torque, encoder, tilt, position, etc. associated with the robot), measurement of temperature and pressure in the semiconductor device manufacturing equipment, etc.

[0118] As shown in Figure 3 , the wafer type sensor 120 can include a sensing module 310, a first communication module 320, a storage module 330, a power module 340, and a first control module 350 to perform the above functions.

[0119] Figure 3 is a diagram schematically showing an internal configuration of a wafer type sensor constituting an auto-teaching system according to an embodiment of the present application. Referring to Figure 3 the following description is made.

[0120] The sensing module 310 is adapted to detect various signals and information required for performing inspection on the semiconductor device manufacturing equipment and its components. In the present embodiment, the sensing module 310 can include an image detector (e.g., a camera), a light signal detector (e.g., a laser beam detector), etc.

[0121] Further, the sensing module 310 can also include, for example, an Accelerometer, an Inclinometer, a Directional Compass, a Magnetic Field Directional Detector, a Magnetic Field Strength Detector, a Thermometer, a Pressure Detector, a Humidity Detector, an Acoustic Detector, an Acidity Detector, a Chemical Moiety Activity Detector, etc.

[0122] The first communication module 320 is used to transmit signals and information detected by the sensing module 310 to the outside. For example, the first communication module 320 can transmit the detected signals and information to the control device 130.

[0123] The first communication module 320 can transmit the detected signals and information in a wireless manner. In this case, the first communication module 320 can use WIFI as the wireless manner. However, the present embodiment is not limited thereto. In the present embodiment, any manner can be adopted as long as it is a manner capable of transmitting and receiving data in a wireless manner. On the other hand, the first communication module 320 can also transmit the detected signals and information in a wired manner.

[0124] On the other hand, the first communication module 320 can also receive specific signals and information from the outside.

[0125] The storage module 330 stores the signals and information detected by the sensing module 310, and the signals and information received from the outside by the first communication module 320, etc. The storage module 330 can include at least one memory chip.

[0126] The power module 340 provides power to enable the respective constituent elements constituting the wafer type sensor 120, i.e., the sensing module 310, the first communication module 320, the storage module 330, the first control module 350, etc., to work smoothly. Such a power module 340 can include at least one battery.

[0127] The first control module 350 controls the overall operation of each component constituting the wafer-type sensor 120, i.e., the sensing module 310, the first communication module 320, the storage module 330, the power module 340, etc. This first control module 350, as a main processing unit (MPU), can be implemented by a processor such as a central processing unit (CPU), a micro processing unit (MPU), etc., and in the present embodiment, can also be understood as including the concept of a digital signal processor (DSP), etc.

[0128] On the other hand, in addition to this, the wafer-type sensor 120 can further include an illumination module including an analog to digital converter (A / D converter), a power on / off switch, and a plurality of light emitting diodes (LEDs).

[0129] As described above, the sensing module 310 can include an image signal detector. In this case, the wafer-type sensor 120 can be implemented by a substrate in which a camera module is built, i.e., a vision wafer.

[0130] In the case where the wafer-type sensor 120 is implemented by a vision wafer in which the camera module 310a is built, as shown in FIG. 3B, the wafer-type sensor 120 can be used to measure the gap K between the chuck component 260 and the consumable component 270 within the substrate processing apparatus 110. Figure 4 In the above, the consumable component 270 can be a ring-shaped component arranged to surround the substrate W within the substrate processing apparatus 110. For example, the consumable component 270 can be a focus ring 223a or an edge ring 223b. On the other hand, the chuck component 260 can be an electrostatic chuck 222. Figure 4 FIG. 1 is a first exemplary diagram for explaining the role of a wafer-type sensor constituting an automatic calibration system according to an embodiment of the present application.

[0131] On the other hand, when the wafer-type sensor 120 measures the gap K between the chuck component 260 and the consumable component 270, as shown in FIG. 3B, a plurality of information (e.g., K1, K2, K3, K4) about the gap with the consumable component 270 can be obtained at each side of the chuck component 260. Figure 5

[0132] ​The intervals K1, K2, K3, K4 between the chuck component 260 and the consumable component 270 thus obtained can be used to center the consumable component 270 with reference to the chuck component 260. Figure 5 is a second example diagram for explaining the function of the wafer-type sensor constituting the automatic calibration system according to an embodiment of the present application.

[0133] On the other hand, in the case where the wafer-type sensor 120 is implemented by a vision wafer, it can also be used to obtain image information about components within the semiconductor device manufacturing equipment or the substrate processing apparatus.

[0134] On the other hand, the sensor module 310 can include an optical signal detector such as a laser beam detector, and in this case, the wafer-type sensor 120 can be used to measure the height of the consumable component 270.

[0135] Reference will again be made to Figure 1 for explanation.

[0136] The control device 130 uses the wafer-type sensor 120 to inspect the semiconductor device manufacturing equipment including the substrate processing apparatus 110 and components thereof. For example, the control device 130 can be implemented by a cluster tool controller (CTC) that performs equipment monitoring using the wafer-type sensor 120.

[0137] As described above, the wafer-type sensor 120 can measure the interval between the chuck component 260 and the consumable component 270 to determine whether the newly replaced consumable component 270 is properly seated on the chuck component 260. In this case, the control device 130 corrects a vacuum transfer robot (VTR) that seats the consumable component 270 around the chuck component 260 based on information obtained by the wafer-type sensor 120, i.e., information about the interval between the chuck component 260 and the consumable component 270. Thereby, when the consumable component 270 is replaced around the chuck component 260 under the control of the control device 130, the VTR can center the consumable component 270 with reference to the chuck component 260.

[0138] The control device 130 can monitor the battery level of the wafer-type sensor 120. Specifically, the control device 130 can function to compare the battery level of the wafer-type sensor 120 with a reference value, and control the wafer-type sensor 120 to charge if it is determined that the battery level of the wafer-type sensor 120 is less than the reference value.

[0139] Hereinafter, various functions of the control device 130 will be described more specifically with reference to the accompanying drawings.

[0140] Figure 6 is a first flowchart for exemplarily illustrating a method of operating a control device constituting an automatic calibration system according to an embodiment of the present application. Referring to Figure 6 The following description is made.

[0141] First, the control device 130 judges whether the consumable 270 is centered in the substrate processing device 110. For example, the control device 130 judges whether the consumable 270 is centered with reference to the chuck component 260.

[0142] In the above case, the wafer-type sensor 120 measures the intervals between the chuck component 260 and the consumable 270 in the substrate processing device 110 (S410). At this time, the wafer-type sensor 120 can measure the intervals of each side of the edge of the chuck component 260 and the consumable 270, thereby obtaining a plurality of interval information (for example, K1, K2, K3, K4 as shown in the drawing). The wafer-type sensor 120 can perform the above function when the consumable 270 is replaced with a new one. Figure 5

[0143] When the plurality of interval information between the chuck component 260 and the consumable 270 is obtained by the wafer-type sensor 120, the control device 130 compares the plurality of interval information with each other (S420) to judge whether the consumable 270 is centered with reference to the chuck component 260 (S430).

[0144] Specifically, the control device 130 can judge whether the consumable 270 is centered with reference to the chuck component 260 based on whether the plurality of interval information are identical to each other, and even if the plurality of interval information are different from each other, can judge whether the consumable 270 is centered with reference to the chuck component 260 based on whether it is within an error range.

[0145] If it is judged that the consumable 270 is not centered with reference to the chuck component 260, the control device 130 generates correction information related to the centering of the consumable 270 based on the information obtained by comparing the plurality of interval information (S440), and provides the correction information to a transfer robot (for example, VTR) (S450).

[0146] Then, the transfer robot corrects the position of the consumable 270 (i.e., resets the consumable 270 around the chuck component 260) based on the correction information (S460), and can repeatedly perform steps S410 to S460 until the consumable 270 is centered with reference to the chuck component 260.

[0147] The above description is made with reference to Figure 6 ​The method described is an example of a case where the consumable part 270 is centered using the wafer-type sensor 120. Next, an example of a case where the battery level of the wafer-type sensor 120 is monitored will be described.

[0148] Figure 7 is a second flowchart for exemplarily illustrating a method of operation of the control device constituting the automatic calibration system according to an embodiment of the present application. Reference will be made to Figure 7 The following description will be made.

[0149] First, the control device 130 communicates with the wafer-type sensor 120 to obtain information on the battery level of the wafer-type sensor 120 (S510).

[0150] Then, the control device 130 compares the battery level of the wafer-type sensor 120 with the reference value (S520) to determine whether the battery level is less than the reference value (e.g., 30% of the total chargeable capacity) (S530).

[0151] If it is determined that the battery level is less than the reference value, the control device 130 controls the wafer-type sensor 120 to be charged (S540). In the present embodiment, the wafer-type sensor 120 can be charged using power supplied from a load port module (LPM) to a front opening unified pod (FOUP) within the semiconductor device manufacturing equipment. Specifically, the wafer-type sensor 120 can be placed on the load port module (LPM) in a state of being built in the FOUP to be charged. This will be described in more detail later.

[0152] On the other hand, if the battery level is less than the reference value, it can also be that the wafer-type sensor 120 issues a charging request signal to the control device 130 through the first communication module 320 according to the control of the first control module 350, and when the control device 130 receives the charging request signal of the wafer-type sensor 120, the control device 130 controls the wafer-type sensor 120 to be charged.

[0153] In addition, if the battery level is less than the reference value, it can also be that the wafer-type sensor 120 issues a warning sound, and the control device 130 recognizes the warning sound of the wafer-type sensor 120 and controls the wafer-type sensor 120 to be charged. In the above case, in addition to the constituent elements shown in Figure 3 The wafer-type sensor 120 can further include a voice / sound output module for outputting a warning sound, in addition to the constituent elements shown in

[0154] Next, an example of a case where the consumable part 270 is centered using the wafer-type sensor 120 and a case where the battery level of the wafer-type sensor 120 is monitored are mixed will be described.

[0155] Figure 8 is a third flowchart for exemplarily illustrating a method of operating the control device constituting the automatic calibration system according to an embodiment of the present application. Referring to Figure 8 The following description is made.

[0156] When the consumable component 270 is newly replaced in the substrate processing device 110 (S610), the control device 130 obtains information about the battery remaining capacity from the wafer-type sensor 120 (S620).

[0157] Then, the control device 130 compares the battery remaining capacity of the wafer-type sensor 120 with the reference value to determine whether the battery remaining capacity is less than the reference value (S630). If it is determined that the battery remaining capacity is less than the reference value, the control device 130 controls the wafer-type sensor 120 to be charged (S640).

[0158] If it is determined that the battery remaining capacity is greater than or equal to the reference value, or when the wafer-type sensor 120 is fully charged, the control device 130 determines whether the consumable component 270 is centered in the substrate processing device 110.

[0159] For example, when it is determined whether the consumable component 270 is centered with respect to the chuck component 260 as a reference, the wafer-type sensor 120 obtains a plurality of interval information between the chuck component 260 and the consumable component 270 (S650). Such a function of the wafer-type sensor 120 can be implemented when the wafer-type sensor 120 is carried in and out of the substrate processing device 110 by the transfer robot according to the control of the control device 130.

[0160] Then, the control device 130 compares the plurality of interval information with each other to determine whether the consumable component 270 is centered with respect to the chuck component 260 as a reference (S660).

[0161] If it is determined that the consumable component 270 is not centered with respect to the chuck component 260 as a reference, the control device 130 generates correction information about the centering of the consumable component 270 based on information obtained by comparing the plurality of interval information and provides the correction information to the transfer robot (S670).

[0162] Then, the transfer robot corrects the position of the consumable component 270 around the electrostatic chuck 222 based on the correction information (S680), and steps S610 to S680 can be repeatedly performed until the consumable component 270 is centered with respect to the chuck component 260 as a reference.

[0163] On the other hand, the control device 130 can monitor the remaining battery level of the chip sensor 120 at any time. If it determines that the remaining battery level of the chip sensor 120 is less than a reference value, it can temporarily stop the current step, and then control the VTR, ATR, etc. to move the chip sensor 120 to the FOUP and charge the chip sensor 120. The previously ongoing step can continue after the chip sensor 120 is charged.

[0164] Reference above Figure 6 to Figure 8 The described method can be executed by the control device 130. This control device 130 may include a communication module that communicates with the wafer-type sensor 120, a power supply module that supplies power, and a control module that performs calculation and control functions.

[0165] The control device 130 can be implemented by a computer equipped with a processor. In this case, refer to... Figure 6 to Figure 8 The method described can be provided using a program (or software) executed by the control device 130. Alternatively, the program can also be provided in the form of storage on a recording medium. The recording medium can be a storage medium that stores program code executable by a processor, such as a hard disk drive (HDD), a solid-state drive (SSD), a universal serial bus (USB), etc.

[0166] Refer again Figure 1 Please provide an explanation.

[0167] Storage device 140 is used to store wafer-type sensor 120, and charging device 150 is used to charge wafer-type sensor 120. In this embodiment, wafer-type sensor 120 can be placed on charging device 150 in a state of being housed in storage device 140 for charging.

[0168] In the above, for example, the storage device 140 can be implemented by a FOUP in the form of a container. Furthermore, for example, the charging device 150 can be implemented by a load port module (LPM).

[0169] The storage device 140 may include multiple slots within it along the vertical direction (third direction 30). For example, as Figure 9 As shown, the storage device 140 may include a first groove 720 disposed in the upper part of the cover member 710 and a second groove 730 disposed in the lower part of the cover member 710.

[0170] In the case where the storage device 140 includes the first slot 720 and the second slot 730 as such, the wafer-type sensor 120 can be loaded in the first slot 720, and the consumable 270 or a substrate (e.g., a wafer) can be loaded in the second slot 730. Figure 9 FIG. 1 is a schematic diagram illustrating an internal structure of a storage device constituting an automatic calibration system according to an embodiment of the present application.

[0171] The wafer-type sensor 120 can have a power on / off switch. In this case, the power of the wafer-type sensor 120 can be turned on / off by a user.

[0172] However, when the automatic calibration is performed, the user needs to turn on / off the power of the wafer-type sensor 120, and thus, there is an inconvenience in that the automatic calibration is always performed manually.

[0173] In addition, in the case where the wafer-type sensor 120 is not fully charged (or fully charged), the power can be turned off in the process of performing the automatic calibration. Thus, it is necessary to store the wafer-type sensor 120 in another storage box and complete the charging before performing the automatic calibration, and thus, there is an inconvenience in that the operation time is delayed.

[0174] In the present embodiment, in order to solve such a problem, when the wafer-type sensor 120 is stored in the storage device 140, the storage device 140 can automatically perform the charging of the wafer-type sensor 120. At this time, the control device 130 can monitor the charging state of the wafer-type sensor 120 and control the storage device 140 to perform the above-described function (i.e., to automatically perform the charging of the wafer-type sensor 120) based on the monitoring result.

[0175] On the other hand, the control device 130 can also continuously monitor the charging state of the wafer-type sensor 120 after the charging of the wafer-type sensor 120 is completed, thereby managing the wafer-type sensor 120.

[0176] In the present embodiment, by the above-described problem solution, full auto teaching of the automatic calibration system 100 can be achieved, and the storage and operation efficiency of the wafer-type sensor 120 using OHT (Over Head Transport) can be maximized.

[0177] The storage device 140 can have a battery charging module to charge the battery of the wafer-type sensor 120. Hereinafter, this will be described in detail.

[0178] Figure 10 FIG. 2 is a schematic diagram illustrating an internal structure of a storage device constituting an automatic calibration system according to an embodiment of the present application.

[0179] According to Figure 10 , the storage device 140 can include a cover member 710, a door member 740, a connector module 750, and a power transmission module 760.

[0180] As described above, the storage device 140 can charge the wafer-type sensor 120. For example, the storage device 140 can be implemented by a vision wafer-specific FOUP loaded with a charging system.

[0181] The cover member 710 serves to constitute the outer shape of the storage device 140. At least one side of such a cover member 710 can be provided with an openable and closable door member 740 so as to store the wafer-type sensor 120 inside thereof.

[0182] When the door member 740 is opened, the wafer-type sensor 120 can be stored inside the cover member 710. At least one wafer-type sensor 120 can be stored in the inner space of the cover member 710, and at this time, a groove (for example, a first groove 720 of the cover member 710) can be provided so as to support each wafer-type sensor 120. Figure 9

[0183] The connector module 750 serves to receive power from the outside. When power is received from the outside, the connector module 750 can transfer the power to the power transmission module 760 in a wired / wireless manner.

[0184] The power transmission module 760 serves to transmit the power received from the connector module 750 to the wafer-type sensor 120. The power transmission module 760 can thereby charge the wafer-type sensor 120.

[0185] In the present embodiment, the storage device 140 can wirelessly charge the wafer-type sensor 120 using the power transmission module 760. At this time, the storage device 140 can wirelessly charge the wafer-type sensor 120 using a magnetic resonance method. In this case, the storage device 140 can include a coil for supporting charging of the magnetic resonance method.

[0186] However, the present embodiment is not limited thereto. The storage device 140 can also wirelessly charge the wafer-type sensor 120 using an electromagnetic induction method.

[0187] On the other hand, the storage device 140 can also wirelessly charge the wafer-type sensor 120 using any one of the magnetic resonance method and the electromagnetic induction method. In this case, the storage device 140 can select any one of the magnetic resonance method and the electromagnetic induction method to wirelessly charge the wafer-type sensor 120 based on the distance between the power transmission module 760 and the wafer-type sensor 120.

[0188] ​For example, if the distance between the power transmission module 760 and the wafer-type sensor 120 is less than the reference distance, the storage device 140 can perform wireless charging of the wafer-type sensor 120 using the electromagnetic induction method, and if the distance between the power transmission module 760 and the wafer-type sensor 120 exceeds the reference distance, the storage device 140 can perform wireless charging of the wafer-type sensor 120 using the magnetic resonance method.

[0189] On the other hand, if the distance between the power transmission module 760 and the wafer-type sensor 120 is equal to the reference distance, the storage device 140 can perform wireless charging of the wafer-type sensor 120 using either of the electromagnetic induction method and the magnetic resonance method.

[0190] On the other hand, in the present embodiment, the storage device 140 can also perform wired charging of the wafer-type sensor 120.

[0191] When the wafer-type sensor 120 is loaded into the inside of the storage device 140, the storage device 140 can automatically perform charging of the wafer-type sensor 120. However, the present embodiment is not limited thereto. The storage device 140 can also perform charging of the wafer-type sensor 120 according to the charging state monitoring result of the wafer-type sensor 120.

[0192] Figure 11 FIG. 3 is a third exemplary view schematically showing an internal structure of a storage device constituting an automatic calibration system according to an embodiment of the present application.

[0193] According to Figure 11 , the storage device 140 can include a cover member 710, a door member 740, a connection module 750, a power transmission module 760, a second communication module 770, and a second control module 780.

[0194] The cover member 710, the door member 740, the connection module 750, and the power transmission module 760 have been described with reference to Figure 10 , and thus detailed descriptions thereof will be omitted here.

[0195] The second communication module 770 serves to transmit information about the charging state of the wafer-type sensor 120 to the control device 130. Such a second communication module 770 can perform the above-described function according to the control of the second control module 780.

[0196] The control device 130 can command the storage device 140 to charge the wafer-type sensor 120 according to the charging state of the wafer-type sensor 120. For example, if the charging value of the wafer-type sensor 120 is less than a reference value (e.g., 30% with respect to full charge, 50% with respect to full charge, etc.), the control device 130 can command the storage device 140 to charge the wafer-type sensor 120. In this case, the power transmission module 760 can supply power to the wafer-type sensor 120 according to the control of the second control module 780.

[0197] In addition, if the charging value of the wafer-type sensor 120 is above the reference value, the control device 130 can not command the storage device 140 to charge the wafer-type sensor 120. In this case, the storage device 140 can not charge the wafer-type sensor 120 but wait.

[0198] On the other hand, in the present embodiment, it is also possible to determine whether to charge the wafer-type sensor 120 by the second control module 780.

[0199] As described above, when power is received from the outside, the connection module 750 can transfer the power to the power transmission module 760. For example, as shown in FIG. 8, when the storage device 140 is moved by the container transfer device 810 (e.g., OHT) and seated on a load port module (LPM) 820 of a semiconductor element manufacturing apparatus, the connection module 750 can receive power from a power supply module 821 (e.g., a power box) through a switch module 822 (e.g., a relay module) and a power conversion module 823 provided inside the load port module 820. Figure 12

[0200] In addition, in the present embodiment, when the storage device 140 is seated on the load port module 820, the control device 130 can monitor the charging state with respect to the wafer-type sensor 120 inside the storage device 140 and control the power supply module 821, the switch module 822, and the power conversion module 823 according to the monitoring result. In this case, a front end module (FEM) 830 of the SFEM, the EFEM, etc. can function as the control device 130.

[0201] As described above, the power supply module 821 functions to supply power. The power supply module 821 can be provided inside the load port module 820, but can also be provided outside the load port module 820.

[0202] The switch module 822 functions to control the flow of power supplied by the power supply module 821, and the power conversion module 823 functions to convert AC power supplied by the power supply module 821 into DC power. Figure 12 ​FIG. 1 is a diagram schematically showing an internal structure of a load port module constituting an automatic calibration system according to an embodiment of the present application.

[0203] On the other hand, according to Figure 13 , the load port module 820 can include a power supply output terminal 824 at an upper portion thereof, so that when the storage device 140 is seated at the upper portion thereof, the power supply output terminal 824 can be electrically connected with the connection module 750 of the storage device 140. The power supply output terminal 824 can include a DC power supply output pin 825 and a FOUP alignment pin 826 to which the connection module 750 can be connected. For example, the FOUP alignment pin 826 can be constituted by three pins. Figure 13 FIG. 4 is an example diagram schematically showing a structure of a power supply output terminal of a load port module constituting an automatic calibration system according to an embodiment of the present application. Figure 12

[0204] In the above, the power supply module 821, the switch module 822, the power conversion module 823, and the power supply output terminal 824 provided in the load port module 820 to charge the battery of the wafer type sensor 120 are described. In the present embodiment, the battery charging device can be defined as a concept including the power supply module 821, the switch module 822, the power conversion module 823, and the power supply output terminal 824.

[0205] On the other hand, when the wafer type sensor 120 is not used, the storage device 140 can be stored on a separately provided rack 840 as shown in Figure 14 The rack 840 can be implemented by a FOUP dedicated storage rack, and a plurality of storage devices 140a, 140b,..., 140n can be stored therein. The wafer type sensors 120 in the storage devices 140a, 140b,..., 140n can be charged using the DC power supplied through the rack 840. Figure 14 FIG. 5 is an example diagram for explaining a storage method when the storage device constituting an automatic calibration system is not used according to an embodiment of the present application.

[0206] As described above, in the present embodiment, the wafer type sensor 120 can be charged in a state of being loaded in the storage device 140, i.e., the FOUP, on the charging device 150, i.e., the load port module 820. At this time, the load port module 820 can supply power for charging the wafer type sensor 120 into the FOUP.

[0207] Hereinafter, a semiconductor device manufacturing apparatus including a load port module (LPM) will be described.

[0208] Figure 15 FIG. 1 is a diagram schematically showing an internal structure of a load port module constituting an automatic calibration system according to an embodiment of the present application. ​

[0209] According to Figure 15 , the semiconductor device manufacturing apparatus 900 can include a load port module (LPM) 820, an indexing module 910, a load-lock chamber 920, a transfer chamber 930, and a process chamber 940.

[0210] The semiconductor device manufacturing apparatus 900 is a system that processes a plurality of substrates (e.g., wafers) through a variety of processes such as an etching process, a cleaning process, etc. Such a semiconductor device manufacturing apparatus 900 can be implemented by a multi-chamber type substrate processing system including a handling robot 911, 931 responsible for transferring substrates and a plurality of process chambers 940 as substrate processing modules disposed around the handling robot 911, 931.

[0211] The load port module 820 is used to house a container 950 (e.g., FOUP) loaded with a plurality of substrates. Such a load port module 820 can be disposed in a plurality in front of the indexing module 910. In the above, the container 950 is substantially the same concept as the storage device 140 except for the different reference numerals.

[0212] In the case where a plurality of load port modules 820 are disposed in front of the indexing module 910, the containers 950 housed on the respective load port modules 820 can load different articles. For example, in the case where three load port modules 820 are arranged in front of the indexing module 910, a first container 950a housed on a first load port 820a on the left can load a wafer type sensor 120, a second container 950b housed on a second load port 820b in the middle can load a substrate (wafer), and a third container 950c housed on a third load port 820c on the right can load a consumable part 270.

[0213] However, the present embodiment is not limited thereto. The containers 950a, 950b, 950c housed on the respective load ports 820a, 820b, 820c can also load the same article. For example, the respective containers 950a, 950b, 950c can load a wafer type sensor 120, a substrate, a consumable, etc.

[0214] On the other hand, it can also be that the containers housed on several load ports load the same article, and the containers housed on the other several load ports load different articles. For example, the first container 950a and the second container 950b can load a wafer type sensor 120, a substrate, etc., and the third container 950c can load a consumable.

[0215] An indexing module 910 is arranged between the load port module 820 and the transfer chamber 920, and is used to engage the container 950 on the load port module 820 and the transfer chamber 920 to transfer the substrate. Such an indexing module 910 can be implemented by a front end module (FEM) such as an SFEM, an EFEM, etc.

[0216] The indexing module 910 can have a first handling robot 911 responsible for transferring the substrate. Such a first handling robot 911 can work in an atmospheric pressure environment, and can transfer the substrate between the container 950 and the transfer chamber 920.

[0217] The transfer chamber 920 functions as a buffer between the input port and the output port on the semiconductor device manufacturing apparatus 900. Such a transfer chamber 920 can include a buffer stage inside for the substrate to temporarily wait.

[0218] The transfer chamber 920 can be provided in multiple between the indexing module 910 and the transfer chamber 930. In the present embodiment, for example, two transfer chambers 921, 922 such as a first transfer chamber 921 and a second transfer chamber 922 can be provided between the indexing module 910 and the transfer chamber 930.

[0219] The first transfer chamber 921 and the second transfer chamber 922 can be arranged in a first direction 10 between the indexing module 910 and the transfer chamber 930. In this case, the first transfer chamber 921 and the second transfer chamber 922 can be provided as a single-layer structure symmetric to each other arranged side by side in a left-right direction. In the above, the first direction 10 refers to a horizontal direction with respect to the arrangement direction of the indexing module 910 and the transfer chamber 930.

[0220] However, the present embodiment is not limited thereto. The first transfer chamber 921 and the second transfer chamber 922 can also be arranged in a third direction 30 between the indexing module 910 and the transfer chamber 930. In this case, the first transfer chamber 921 and the second transfer chamber 922 can be provided as a multi-layer structure arranged in an up-down direction. In the above, the third direction 30 refers to a vertical direction with respect to the arrangement direction of the indexing module 910 and the transfer chamber 930.

[0221] The first transfer chamber 921 can transfer the substrate from the indexing module 910 to the transfer chamber 930, and the second transfer chamber 922 can transfer the substrate from the transfer chamber 930 to the indexing module 910. However, the present embodiment is not limited thereto. It can also be that the first transfer chamber 921 transfers the substrate from the transfer chamber 930 to the indexing module 910, and the second transfer chamber 922 transfers the substrate from the indexing module 910 to the transfer chamber 930.

[0222] The transition chamber 920 can be loaded or unloaded with the substrate by the second transfer robot 931 of the transfer chamber 930. The transition chamber 920 can also be loaded or unloaded with the substrate by the first transfer robot 911 of the indexing module 910.

[0223] The transition chamber 920 can maintain the pressure by changing its inside to a vacuum environment or an atmospheric pressure environment using a valve or the like. The transition chamber 920 can thereby prevent the internal pressure state of the transfer chamber 930 from changing.

[0224] Specifically, when the substrate is loaded or unloaded by the second transfer robot 931, the transition chamber 920 can form its inside to the same (or close to) vacuum environment as the transfer chamber 930. In addition, when the substrate is loaded or unloaded by the first transfer robot 911 (i.e., when receiving the unprocessed substrate from the first transfer robot 911 or transferring the processed substrate to the indexing module 910), the transition chamber 920 can form its inside to an atmospheric pressure environment.

[0225] The transfer chamber 930 serves to transfer the substrate between the transition chamber 920 and the process chamber 940. To this end, the transfer chamber 930 can have at least one second transfer robot 931.

[0226] The second transfer robot 931 transfers the unprocessed substrate from the transition chamber 920 to the process chamber 940 or transfers the processed substrate from the process chamber 940 to the transition chamber 920. To this end, each side of the transfer chamber 930 can be connected with the transition chamber 920 and the plurality of process chambers 940.

[0227] On the other hand, the second transfer robot 931 can operate in a vacuum environment and can be provided to freely rotate.

[0228] The process chamber 940 serves to process the substrate. Such a process chamber 940 can be implemented by an etching chamber that processes the substrate using an etching process, for example, can be implemented by a plasma reaction chamber that processes the substrate using a plasma process.

[0229] The process chamber 940 can be arranged as a plurality around the transfer chamber 930. In this case, each process chamber 940 can receive the substrate from the transfer chamber 930 and process the substrate, and provide the processed substrate to the transfer chamber 930.

[0230] The process chamber 940 can be formed in a cylindrical shape. Such a process chamber 940 can be made of aluminum oxide in which an anodized film is formed on the surface, and its inside can be airtight. On the other hand, in the present embodiment, the process chamber 940 can also be formed in other shapes other than the cylindrical shape.

[0231] The semiconductor device manufacturing apparatus 900 can be formed in a structure having a cluster platform. In this case, a plurality of process chambers 940 can be arranged in a cluster manner with the transfer chamber 930 as a reference, and a plurality of transition chambers 920 can be arranged in the first direction 10.

[0232] However, the present embodiment is not limited thereto. As shown in FIG. 9, the semiconductor device manufacturing apparatus 900 can also be formed in a structure having a quad platform. In this case, a plurality of process chambers 940 can be arranged in a quad manner with the transfer chamber 930 as a reference. Figure 16 Figure 16 is an example view of a second embodiment of a semiconductor device manufacturing apparatus including a load port module.

[0233] On the other hand, as shown in FIG. 10, the semiconductor device manufacturing apparatus 900 can also be formed in a structure having an in-line platform. In this case, a plurality of process chambers 940 can be arranged in an in-line manner with the transfer chamber 930 as a reference, and a pair of process chambers 940 can be arranged in-line on both sides of the transfer chamber 930. Figure 17 Figure 17 is an example view of a third embodiment of a semiconductor device manufacturing apparatus including a load port module.

[0234] The embodiments of the present application have been described above with reference to the accompanying drawings, but it will be appreciated by those skilled in the art that the present application can be implemented in other specific forms without changing the technical idea or essential characteristics thereof. Therefore, it should be understood that the above-described embodiments are exemplary in all aspects and are not restrictive.​​

Claims

1. A computer program product comprising a control program, wherein, The control program, when executed by a control device loaded with a processor, implements the following steps: monitoring a semiconductor device manufacturing apparatus and components thereof using a wafer type sensor, and monitoring a battery level of the wafer type sensor; if the battery level of the wafer type sensor is less than a reference value, charging the wafer type sensor using a battery charging device provided in a load port module; wherein the battery charging device includes: a power supply module supplying first power; a power conversion module provided inside the load port module and converting the first power into second power; and a power output terminal provided at an upper portion of the load port module and connected to a connection module of a container for loading the wafer type sensor.

2. The computer program product of claim 1, wherein, whether a consumable component is centered in a substrate processing device is monitored.

3. The computer program product of claim 2, wherein, whether the consumable component is centered is monitored when the consumable component is newly replaced.

4. The computer program product of claim 2, wherein, the wafer type sensor measures a gap between the consumable component and a chuck.

5. The computer program product of claim 2, wherein, if the consumable component is not centered, a position of the consumable component is corrected using a transfer robot based on correction information related to centering.

6. The computer program product of claim 1, wherein, the wafer type sensor is loaded in a container when the wafer type sensor is charged.

7. The computer program product of claim 6, wherein, the container loaded with the wafer type sensor is placed on the load port module when the wafer type sensor is charged.

8. The computer program product of claim 1, wherein, if the battery level of the wafer type sensor is less than a reference value, the semiconductor device manufacturing apparatus and components thereof are monitored after the wafer type sensor is charged.

9. A container, wherein, the container loads a wafer type sensor, and the container charges the wafer type sensor using a load port module having a battery charging device; wherein the battery charging device includes: a power supply module supplying first power; a power conversion module provided inside the load port module and converting the first power into second power; and a power output terminal provided at an upper portion of the load port module and connected to a connection module of the container.

10. The container of claim 9, wherein, the container charges the wafer type sensor when the wafer type sensor is loaded into the container.

11. The container of claim 9, wherein, the container includes a plurality of grooves provided in an up-and-down direction inside the container.

12. The container of claim 9, wherein, the container includes: a first groove provided inside the container; and a second groove provided below the first groove, wherein different articles are loaded in the first groove and the second groove.

13. The container of claim 9, wherein, the container charges the wafer-type sensor based on a battery level monitoring result of the wafer-type sensor.

14. The container of claim 9, wherein, the wafer-type sensor is loaded in the container while being charged.

15. A semiconductor device manufacturing apparatus comprising: a load port module disposed as a front end module; an index module disposed adjacent to the load port module and having a first handling robot that handles a substrate loaded in a container on the load port module; process chambers that process the substrate and are disposed in plural; and a transfer chamber disposed adjacent to the process chambers and having a second handling robot that carries into or out of the process chambers an unprocessed substrate handled by the first handling robot, wherein the load port module has a battery charging device and charges a wafer-type sensor loaded in the container using the battery charging device; wherein the battery charging device includes: a power supply module that supplies first power; a power conversion module disposed inside the load port module and that converts the first power into second power; and a power output terminal disposed at an upper portion of the load port module and that is connected with a connection module of the container.

16. The semiconductor device manufacturing apparatus of claim 15, wherein, the load port module is plural.

17. The semiconductor device manufacturing apparatus of claim 16, wherein, each of the containers disposed on each of the load port modules loads different articles from each other. ​

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