A Schottky-PN junction diode based on cubic boron nitride (c-BN) single crystal material

Abstract

This invention discloses a Schottky-PN junction diode based on cubic boron nitride (c-BN) single crystal material. The Schottky-PN junction diode comprises a c-BN crystal, an ITO thin film, and an Au electrode. An ITO thin film and an Au electrode are deposited on both sides of the c-BN crystal, and then the Au is soldered to In as an external conductor. The Au / c-BN / ITO Schottky-PN junction diode has an ideality factor of 25.15 and a turn-on voltage of 5V. This invention provides a framework for the fabrication and analysis of electronic devices based on c-BN single crystals.

Description

Technical Field

[0001] This invention belongs to the technical field of electronic devices, specifically relating to a Schottky-PN junction diode based on cubic boron nitride (c-BN) single crystal material. Background Technology

[0002] Schottky diodes have low turn-on voltage and low reverse breakdown voltage, while PN junction diodes have high turn-on voltage and high breakdown voltage. To combine these characteristics, Makino proposed the Schottky-PN junction diode (SPND) in 2009. Currently, traditional silicon-based diodes, limited by their poor thermal conductivity and low breakdown voltage, are struggling to meet the demands of higher-power electronic devices. Attention is increasingly turning to wide-bandgap semiconductor materials with high thermal conductivity, high breakdown field strength, and high electron saturation velocity. Summary of the Invention

[0003] In view of the deficiencies of the prior art, the present invention provides a Schottky-PN junction diode based on cubic boron nitride (c-BN) single crystal material.

[0004] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0005] A Schottky-PN junction diode based on cubic boron nitride (c-BN) single crystal material, comprising a c-BN crystal, an ITO thin film, and an Au electrode. Specifically, an ITO thin film and an Au electrode are deposited on both sides of the c-BN crystal, and then the Au is soldered to In as an external conductor.

[0006] It should be noted that the c-BN crystal was synthesized under high temperature and high pressure conditions of 1800℃ and 6GPa.

[0007] It should be noted that the maximum width of the c-BN crystal is approximately 1.5 mm.

[0008] It should be noted that the ideality factor of the Schottky-PN junction diode is 25.15 and the turn-on voltage is 5V.

[0009] It should be noted that a Schottky contact is formed between the c-BN crystal and the Au electrode, and a PN junction contact is formed between the c-BN crystal and the ITO thin film.

[0010] This invention also provides an application of a Schottky-PN junction diode based on cubic boron nitride (c-BN) single crystal material, which can be applied to power diodes. Attached Figure Description

[0011] Figure 1(a) IV characteristics of Au / c-BN / Au devices; Figure 1 (b) IV characteristics of Au / c-BN / ITO Schottky-PN junction diode. Detailed Implementation

[0012] The present invention will be further described below with reference to the accompanying drawings. It should be noted that this embodiment is based on the present technical solution and provides detailed implementation methods and specific operation processes, but the protection scope of the present invention is not limited to this embodiment.

[0013] This invention relates to a Schottky-PN junction diode based on cubic boron nitride (c-BN) single crystal material. The Schottky-PN junction diode includes a c-BN crystal, an ITO thin film, and an Au electrode. Specifically, an ITO thin film and an Au electrode are deposited on both sides of the c-BN crystal, and then the Au is soldered to In as an external conductor.

[0014] Furthermore, the c-BN crystal of the present invention is synthesized under high temperature and high pressure conditions of 1800℃ and 6GPa.

[0015] Furthermore, the maximum width of the c-BN crystal described in this invention is approximately 1.5 mm.

[0016] Furthermore, the ideality factor of the Schottky-PN junction diode described in this invention is 25.15, and the turn-on voltage is 5V.

[0017] Furthermore, a Schottky contact is formed between the c-BN crystal and the Au electrode, and a PN junction contact is formed between the c-BN crystal and the ITO thin film.

[0018] This invention also provides an application of a Schottky-PN junction diode based on cubic boron nitride (c-BN) single crystal material, which can be applied to power diodes.

[0019] Example

[0020] The IV characteristic curve of the diode of the present invention under dark conditions is as follows: Figure 1 As shown in (a), it can be seen from the figure that Au serves as a Schottky contact as the electrode of BN. After determining the electrode contact type, this invention can further utilize a physical masking method to deposit an ITO thin film and an Au electrode onto the surface of the c-BN crystal, and then weld Au and In together as an external conductor. The IV characteristic curve of this diode under dark conditions is shown in the figure. Figure 1 As shown in (b), the IV curve exhibits obvious rectification characteristics, with a rectification factor reaching 10. 2 Around 20V bias, the current is approximately 0.286A / cm. 2The diode has a forward threshold voltage or turn-on voltage of 5V. The relatively high forward threshold voltage or turn-on voltage is mainly attributed to the high concentration of unintentional doping in the c-BN crystal, which is rich in elements such as Na, K, and Li. Another factor is the high potential barrier height formed by the energy level difference between the c-BN crystal and the Au metal, as well as the high barrier height of the PN junction formed by c-BN / ITO.

[0021] For those skilled in the art, various corresponding modifications can be made based on the above technical solutions and concepts, and all such modifications should be included within the scope of protection of the claims of this invention.

Claims

1. A Schottky-PN junction diode based on cubic boron nitride (c-BN) single crystal material, characterized in that, The Schottky-PN junction diode includes a c-BN crystal, an ITO thin film, and an Au electrode; wherein, an ITO thin film and an Au electrode are deposited on both sides of the c-BN crystal, and then the Au is soldered to In as an external conductor; The c-BN crystal is synthesized under high temperature and high pressure conditions of 1800℃ and 6GPa, and the maximum width of the c-BN crystal is 1.5mm; the ideal factor of the Schottky-PN junction diode is 25.15 and the turn-on voltage is 5V.

2. The Schottky-PN junction diode based on cubic boron nitride (c-BN) single crystal material according to claim 1, characterized in that, A Schottky contact is formed between the c-BN crystal and the Au electrode, and a PN junction contact is formed between the c-BN crystal and the ITO thin film.

3. An application of a Schottky-PN junction diode based on cubic boron nitride (c-BN) single crystal material as described in claim 1, characterized in that, It can be applied to power diodes.

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