Stage and substrate processing apparatus
By designing a detachable dielectric board connection structure on the mounting platform, the problem of poor maintainability of the electrostatic chuck in the substrate processing device is solved, and the replacement and maintenance are simplified and the temperature uniformity is improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TOKYO ELECTRON LTD
- Filing Date
- 2021-12-07
- Publication Date
- 2026-06-05
AI Technical Summary
Existing substrate processing equipment suffers from poor maintainability during maintenance, especially when replacing the dielectric board (electrostatic chuck) of the mounting stage.
A mounting platform was designed in which a dielectric plate is connected to a support member, a heat insulation member, and a force-applying member through a through hole, and is detachably fixed to the support member by a fastening member, which simplifies the installation and disassembly process of the electrostatic chuck.
It improves the maintainability of the loading platform, simplifies the replacement and maintenance process of the electrostatic chuck, reduces the working space requirement, and enhances temperature uniformity and thermal stress control.
Smart Images

Figure CN114628307B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to a mounting stage and a substrate processing apparatus. Background Technology
[0002] A substrate processing apparatus is known to have a mounting stage for placing a substrate within a chamber. Patent Document 1 discloses a substrate processing apparatus having a base with an electrostatic chuck arranged within a processing chamber.
[0003] Existing technical documents
[0004] Patent documents
[0005] Patent Document 1: Japanese Patent No. 5270310 Summary of the Invention
[0006] The problem the invention aims to solve
[0007] However, during maintenance of the substrate processing apparatus, such as replacing the dielectric plate (electrostatic chuck) of the mounting stage disposed within the chamber, there is a need to improve the maintainability of the mounting stage.
[0008] In view of the above-mentioned problems, the present invention aims to provide a mounting platform and substrate processing apparatus with improved maintainability.
[0009] Solution for solving the problem
[0010] To address the aforementioned issues, a technical solution provides a mounting platform comprising: a dielectric plate having a through hole formed on its outer periphery, the dielectric plate having a substrate mounting portion for mounting a substrate; a support member; a first heat-insulating member disposed between the dielectric plate and the support member; a first force-applying member disposed between the first heat-insulating member and the support member; and a fastening member passing through the through hole of the dielectric plate, the first heat-insulating member, and the first force-applying member, thereby fixing the dielectric plate to the support member in a detachable manner.
[0011] The effects of the invention
[0012] According to one technical solution, a mounting stage and substrate processing apparatus with improved maintainability can be provided. Attached Figure Description
[0013] Figure 1 This is an example of a cross-sectional schematic diagram of the substrate processing apparatus of this embodiment.
[0014] Figure 2 This is an example of a side view of an electrostatic chuck.
[0015] Figure 3This is an example of a top view of a stage with the electrostatic chuck removed.
[0016] Figure 4 This is an example of a cross-sectional view of the stage.
[0017] Figure 5 This is an example of a partially enlarged sectional perspective view of the stage.
[0018] Figure 6 This is an example of a partially enlarged sectional perspective view of the stage. Detailed Implementation
[0019] Hereinafter, embodiments for carrying out the invention will be described with reference to the accompanying drawings. Furthermore, in this specification and the drawings, substantially identical structures are labeled with the same reference numerals, thereby omitting redundant descriptions.
[0020] use Figure 1 The substrate processing apparatus 1 of this embodiment will be described. Figure 1 This is an example of a cross-sectional schematic diagram of the substrate processing apparatus 1 according to this embodiment. The substrate processing apparatus 1 includes: a stage (placement stage) 40, a power supply 50, a heat transfer gas supply device 60, a processing gas supply device 70, an exhaust device 80, and a chamber 90.
[0021] The chamber 90 has a cover 91 and a container 92. The container 92 is an open container. The cover 91 closes the opening of the container 92, thereby making the chamber 90 airtight. A stage 40 for placing a substrate W, which is the object to be processed, is provided inside the chamber 90. The stage 40 has an electrostatic chuck 10, a support 20, and a water-cooled flange 30.
[0022] Electrostatic chucks 10 pairs are placed on the substrate mounting section 11 (see below). Figure 2 The substrate W is held in place by electrostatic adsorption. The electrostatic chuck 10 is formed of a dielectric plate and is made of ceramic (e.g., alumina). A heater 15 is provided within the electrostatic chuck 10 for adjusting the temperature of the substrate mounting portion 11 on which the substrate W is placed. Furthermore, the heater 15 may be configured to be divided into multiple units in the circumferential and / or radial direction of the electrostatic chuck 10, and each unit can be independently temperature-controlled. Additionally, electrodes (not shown) for electrostatically adsorbing the substrate W are provided within the electrostatic chuck 10.
[0023] The electrostatic chuck 10 is configured to be detachable from the support 20. The support 20 supports the electrostatic chuck 10. The water-cooled flange 30 supports the support 20. A flow path (not shown) for cooling water is formed within the water-cooled flange 30. Therefore, when the substrate processing apparatus 1 performs the desired processing on the substrate W, the water-cooled flange 30 becomes colder than the electrostatic chuck 10. Furthermore, using... Figures 2 to 6 The structure of the stage 40 is then described.
[0024] Power supply 50 supplies power to heater 15 of electrostatic chuck 10. Additionally, substrate processing apparatus 1 includes a power supply (not shown) that supplies power to electrodes (not shown) within electrostatic chuck 10 for electrostatic adsorption. For example, a DC voltage is applied to the electrodes for electrostatic adsorption, thereby using Coulomb force to adsorb the substrate W onto electrostatic chuck 10.
[0025] The heat transfer gas supply device 60 supplies heat transfer gas (e.g., He gas) between the substrate W and the electrostatic chuck 10. This improves the thermal conductivity between the substrate W and the electrostatic chuck 10.
[0026] The processing gas supply device 70 supplies processing gas into the chamber 90. The exhaust device 80 exhausts the gas in the chamber 90.
[0027] Based on the above structure, the substrate processing apparatus 1 uses an electrostatic chuck 10 to pick up the substrate W placed on the stage 40. Furthermore, the substrate processing apparatus 1 controls the temperature of the substrate W by controlling the heater 15. For example, the temperature of the substrate W is controlled in a way that makes it uniform in-plane. The substrate processing apparatus 1 uses an exhaust device 80 to create a desired vacuum atmosphere inside the chamber 90, and uses a processing gas supply device 70 to supply processing gas into the chamber 90, thereby performing the desired processing (e.g., film deposition, etching, etc.) on the substrate W placed on the stage 40.
[0028] <Platform>
[0029] Next, use Figures 2 to 6 The structure of the stage 40 used to mount the substrate W will be further explained. Figure 2 This is an example of a side view of the electrostatic chuck 10. Figure 3 This is an example of a top view of the stage 40 with the electrostatic chuck 10 removed. Figure 4 It is along line AA (refer to) Figure 3 An example of a cross-sectional view of a stage 40 formed by cutting.
[0030] like Figure 2 As shown, the electrostatic chuck 10 has a substrate mounting portion 11 for mounting a substrate W and an outer peripheral portion 12. A bolt 25 (see reference 12) is formed on the outer peripheral portion 12 of the electrostatic chuck 10. Figure 4 Multiple through holes 13 (refer to) Figure 4 The electrostatic chuck 10 is fixed to the bracket 20 in a removable manner using bolts 25.
[0031] Multiple contact pins 14 are erected on the back side of the electrostatic chuck 10. The contact pins 14 are respectively connected to a heater 15 disposed within the dielectric plate of the electrostatic chuck 10 and an electrode (not shown) for electrostatic adsorption. When the electrostatic chuck 10 is mounted on the bracket 20, the contact pins 14 engage with the slots 285 of the bracket 20 (see reference 285). Figure 3 , Figure 4 Electrical connection.
[0032] In addition, such as Figure 4 As shown, a nozzle insertion portion 16 for inserting a nozzle 62 is formed on the back side of the electrostatic chuck 10. Additionally, a gas flow path 17 is formed, communicating from the nozzle insertion portion 16 to the substrate mounting portion 11 of the electrostatic chuck 10. When the electrostatic chuck 10 is mounted on the bracket 20, the nozzle 62 is inserted into the nozzle insertion portion 16. Thereby, heat transfer gas supplied from the nozzle 62 passes through the gas flow path 17 from the nozzle insertion portion 16 to the substrate mounting portion 11 and the substrate W (see reference 10). Figure 1 Supply between ).
[0033] The bracket (support member) 20 has a shaft 21, a ring member 22, a heat insulation member 23 and a force-applying member 24.
[0034] The shaft 21 has a hollow portion 211 extending vertically through its center. Additionally, the shaft 21 has a flange shape that widens at the top. A cylindrical recess 212 is formed on the upper surface of the shaft 21. Furthermore, an internally threaded hole 213 with a diameter smaller than the recess 212 is formed on the bottom surface of the recess 212.
[0035] The annular member 22 has an annular portion 221 in the shape of an annulus. A bolt 25 (see reference) is formed in the annular portion 221. Figure 4 A through hole 222 is provided. Additionally, a nozzle guide 223 is provided on the inner side facing the annular portion 221. A hole 224 is provided in the nozzle guide 223 for the nozzle 62 to pass through. The hole 224 is larger than the nozzle 62, allowing the nozzle 62 to move within the hole 224.
[0036] The thermal insulation component 23 is a cylindrical component through which bolts 25 can pass, and is made of, for example, ceramic.
[0037] The force-applying member 24 is a member that allows the bolt 25 to pass through and applies force in the axial direction of the bolt 25. The force-applying member 24 can be, for example, a spring washer, a coil spring, etc.
[0038] Bolt 25 has a head, a shaft, and a threaded portion.
[0039] <Method for fixing the electrostatic chuck 10>
[0040] Then, while referring to Figure 4 While using Figure 5Explain the method for fixing the electrostatic chuck 10. Figure 5 It is along line AA (refer to) Figure 3 An example of a partially enlarged sectional perspective view of the stage 40 formed by cutting. A force-applying member 24 is disposed in the recess 212 of the shaft 21, and a heat-insulating member 23 is disposed on the force-applying member 24. An annular member 22 is disposed on the heat-insulating member 23. An electrostatic chuck 10 is disposed on the annular member 22. A bolt 25 passes through the through hole 13 of the electrostatic chuck 10, the through hole 222 of the annular member 22, the heat-insulating member 23, and the force-applying member 24. Moreover, the threaded portion of the bolt 25 is threaded into the internal threaded hole 213, thereby enabling the electrostatic chuck 10 to be fixed to the bracket 20.
[0041] Here, when processing the substrate W, the electrostatic chuck 10 is heated by the heater 15. On the other hand, the shaft 21 is fixed to the water-cooled flange 30. In the stage 40 of this embodiment, the electrostatic chuck 10 is fixed to the shaft 21 via the heat insulation member 23, thereby suppressing heat loss from the electrostatic chuck 10 to the shaft 21. As a result, the temperature uniformity of the substrate mounting portion 11 of the electrostatic chuck 10 can be improved.
[0042] Furthermore, the inner diameters of the through hole 13 of the electrostatic chuck 10 and the through hole 222 of the annular member 22 are formed to be larger than the outer diameter of the shaft portion of the bolt 25. As a result, even if a thermal expansion difference is generated between the electrostatic chuck 10, the annular member 22, and the shaft 21, the generation of thermal stress can be suppressed by sliding at the interface.
[0043] Furthermore, since the force-applying member 24 can be positioned between the shaft 21, which is at a lower temperature than the electrostatic chuck 10, and the heat-insulating member 23, it is also possible to use the force-applying member 24, which has lower heat resistance. In other words, the selectivity of the material for the force-applying member 24 is improved.
[0044] <Method for connecting the heat transfer gas nozzle 62>
[0045] Next, use Figures 2 to 5 The method for fixing the electrostatic chuck 10 is explained. The nozzle 62 is connected to the heat transfer gas supply device 60 via the heat transfer gas supply pipe 61 (see reference). Figure 1 ).
[0046] A cylindrical recess 214 is formed on the upper surface of the shaft 21. Additionally, a hole 215 with a diameter smaller than the recess 214 is formed on the bottom surface of the recess 214. A force-applying member 27 is disposed in the recess 214 of the shaft 21, and a heat-insulating member 26 is disposed on the force-applying member 27. A nozzle 62 is disposed on the heat-insulating member 26. The horizontal movement of the nozzle 62 is guided by the hole 224 of the nozzle guide 223.
[0047] Here, when the electrostatic chuck 10 is fixed to the shaft 21, the nozzle 62 is guided by the nozzle guide 223, thereby allowing the nozzle 62 to be easily inserted into the nozzle insertion portion 16 of the electrostatic chuck 10. Furthermore, by fixing the electrostatic chuck 10 to the shaft 21 with the bolt 25, the nozzle 62 can be pressed into the nozzle insertion portion 16. Additionally, a sealing member (not shown) may be provided between the nozzle 62 and the nozzle insertion portion 16.
[0048] In the stage 40 of this embodiment, the nozzle 62 is supported on the shaft 21 via the heat insulation member 26, thereby suppressing heat loss from the electrostatic chuck 10 to the shaft 21. As a result, the temperature uniformity of the substrate mounting portion 11 of the electrostatic chuck 10 can be improved.
[0049] Furthermore, since the force-applying member 27 can be positioned between the shaft 21, which is at a lower temperature than the electrostatic chuck 10, and the heat-insulating member 26, it is also possible to use the force-applying member 27, which has lower heat resistance. In other words, the selectivity of the material for the force-applying member 27 is improved.
[0050] <Connection method of contact pin 14>
[0051] Next, while referring to Figures 2 to 4 While using Figure 6 Explain the connection method of contact pin 14. Figure 6 It is along the BB line (refer to) Figure 3 An example of a partially enlarged sectional perspective view of the stage 40 formed by cutting. A contact member 28 is provided in the hollow portion 211 of the shaft 21, which is erected by the water-cooled flange 30.
[0052] The contact member 28 has a column member 281, a lower plate member 282, an upper plate member 283, a cylindrical member 284, a slot 285, a stranded wire 286, and a connector 287. The column member 281 is erected from the water-cooled flange 30 and supports the lower plate member 282 and the upper plate member 283. The lower plate member 282 has a recess 282a. The bottom surface of the recess 282a is through. The upper plate member 283 has a through hole 283a.
[0053] The slot 285 has a shaft portion 285a, a flange portion 285b, and a terminal 285c. Here, the inner diameter of the recess portion 282a is larger than the outer diameter of the flange portion 285b, and the inner diameter of the through hole 283a is larger than the outer diameter of the shaft portion 285a, thus enabling the slot 285 to move horizontally. Furthermore, the outer diameter of the flange portion 285b is larger than the inner diameter of the through hole 283a, thereby restricting the vertical movement of the slot 285.
[0054] The cylindrical member 284 is disposed between the lower plate member 282 and the water-cooled flange 30. A connector 287 is disposed below the cylindrical member 284. An electrode pin 288 is connected to the connector 287. The terminal 285c and the connector 287 are connected by a flexible stranded wire 286.
[0055] As described above, based on the stage 40, the electrostatic chuck 10 can be easily removed from the bracket 20 (shaft 21) by removing the bolts 25. Furthermore, the connection of the heat transfer gas path (the engagement of the nozzle insertion part 16 and the nozzle 62) and the electrical path connection (the connection of the contact pin 14 and the slot 285) can be easily disconnected. Additionally, when installing the electrostatic chuck 10 onto the bracket 20 (shaft 21), it is secured with the bolts 25, thus facilitating installation. Furthermore, the connection of the heat transfer gas path (the engagement of the nozzle insertion part 16 and the nozzle 62) and the electrical path connection (the connection of the contact pin 14 and the slot 285) can be easily reconnected.
[0056] Furthermore, when replacing the electrostatic chuck 10 on the stage 40 within the chamber 90, the work can be performed through the opening above the container 92 by removing the cover 91 of the chamber 90, thereby allowing for the installation and removal of the bolts 25 and the electrostatic chuck 10. This improves the workability when maintaining the electrostatic chuck 10. Additionally, when replacing the electrostatic chuck 10, it is not necessary to work from the side or bottom of the chamber 90, thus reducing the required work space.
[0057] Furthermore, even if the stage 40 expands thermally and a thermal expansion difference is generated between the components, the generation of thermal stress can be suppressed by sliding at the interface between the electrostatic chuck 10 and the annular member 22 and the interface between the annular member 22 and the insulating member 23.
[0058] Furthermore, the slot 285 is supported so as to be movable in the horizontal direction, and the terminals 285c of the slot 285 and the connector 287 are connected by stranded wire 286. This allows for the absorption of positional displacement of the contact pin 14. Consequently, when the contact pin 14 is inserted into the slot 285, the load applied to the electrostatic chuck 10 can be suppressed.
[0059] The mounting stage and substrate processing apparatus have been described above using the embodiments described above. However, the mounting stage and substrate processing apparatus of the present invention are not limited to the embodiments described above, and various modifications and improvements can be made within the scope of the present invention. The items described in the above embodiments can be combined without contradiction.
[0060] The substrate processing apparatus of the present invention can also be a plasma processing apparatus that generates plasma in the processing space to process the substrate. The plasma processing apparatus can be applied to any of the following types: Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial LineSlot Antenna (RLSA), Electron Cyclotron Resonance Plasma (ECR), and Helicon Wave Plasma (HWP).
Claims
1. A platform, wherein, The platform includes: A dielectric plate having through holes formed on its outer periphery, the dielectric plate having a substrate mounting portion for mounting a substrate; axis; A first thermal insulation component is disposed between the dielectric plate and the shaft; A first force-applying member is disposed between the first thermal insulation member and the shaft, the first thermal insulation member being disposed on the first force-applying member; and A fastening member, which passes through a through hole in the dielectric plate, the first heat insulation member, and the first force-applying member, secures the dielectric plate to the shaft in a detachable manner. The shaft has a first recess formed on its upper surface, and the lower end of the first heat-insulating member and the first force-applying member are disposed in the first recess. The mounting platform also includes an annular component disposed between the dielectric plate and the first thermal insulation component, and has a through hole through which the fastening component passes. The dielectric plate has a gas flow path for the heat transfer gas to pass through. The annular component has a guide that directs the nozzle of the heat transfer gas into the gas flow path. The platform also includes: A second heat-insulating member, disposed between the nozzle and the shaft; and The second force-applying member is disposed between the second thermal insulation member and the shaft. The shaft has a second recessed portion. The lower end of the second thermal insulation member and the second force-applying member are disposed in the second recess. When the dielectric plate is fixed to the shaft using the fastening member, the nozzle is guided by the guide member. When the fastening member is removed, the dielectric plate can be removed from the shaft, and the connection of the heat transfer gas path can be disconnected.
2. The mounting platform according to claim 1, wherein, The inner diameter of the through hole in the dielectric plate is larger than the outer diameter of the fastening member that passes through the through hole.
3. The mounting platform according to claim 1 or 2, wherein, The dielectric plate has contact pins. The connector connected to the contact pin is supported so that it can move in the horizontal direction.
4. A substrate processing apparatus, wherein, The substrate processing apparatus includes: The mounting stage according to any one of claims 1 to 3; and A chamber for housing the stage.
5. The substrate processing apparatus according to claim 4, wherein, The chamber has a container with an opening at the top and a lid that closes the opening of the container.