A method for manufacturing a novel semiconductor device

Abstract

The application provides a preparation method of a novel semiconductor device, comprising the following steps: forming a defect prevention structure on a first substrate, wherein the defect prevention structure comprises any one or a combination of a laminated structure and a patterned structure; and forming a first functional material on the defect prevention structure to form a low-defect substrate. The preparation method of the novel semiconductor device can reduce defects in a film layer by using the laminated structure or the patterned structure, and can block the movement of dislocations and avoid the formation of penetrating dislocations.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a novel method for fabricating a semiconductor device. Background Technology

[0002] Non-planar FinFET devices, as their core components, possess strong gate control capabilities and strong suppression of short-channel effects. However, the manufacturing process of FinFET devices is complex. Compared to non-planar FinFET processes, planar fully depleted silicon-insulator (FDSOI) or planar fully depleted germanium-insulator (FDGeOI) devices require far fewer photolithography plates, making the process relatively easier and significantly reducing costs.

[0003] Planar FDSOI / FDGeOI can reduce parasitic capacitance and improve operating speed; reduce leakage current and have lower power consumption; at the same time, it can also eliminate latch-up effect and suppress substrate pulse current interference; however, during the fabrication process of planar FDSOI / FDGeOI, dislocations and defects are inevitably generated, and the presence of dislocations and defects can easily lead to a degradation in device performance. Summary of the Invention

[0004] The novel semiconductor device fabrication method provided by this invention can reduce defects in the film layer using a stacked or patterned structure, while simultaneously blocking the movement of dislocations and preventing the formation of through dislocations.

[0005] This invention provides a novel method for fabricating a semiconductor device, comprising:

[0006] A defect prevention structure is formed on a first substrate, wherein the defect prevention structure includes any one or a combination of two of a stacked structure and a patterned structure;

[0007] The first functional material is formed on the defect prevention structure to form a low-defect substrate.

[0008] Optionally, forming the defect prevention structure on the first substrate includes: forming at least one first film layer and at least one second film layer in a staggered manner on the first substrate to form a stacked structure.

[0009] Optionally, forming the defect prevention structure on the first substrate includes: forming a pattern on the first substrate using a patterning material and forming a filling material in the patterned grooves to form a patterned structure.

[0010] Optionally, forming the defect prevention structure on the first substrate includes:

[0011] At least one first film layer and at least one second film layer are sequentially and alternately stacked on a first substrate to form a stacked structure;

[0012] Graphical materials are used to form patterns on a layered structure, and filling materials are formed in the grooves of the patterns to form a graphic structure.

[0013] Optionally, forming the defect prevention structure on the first substrate includes:

[0014] A pattern is formed on a first substrate using a patterning material, and a filling material is formed in the patterned grooves to form a patterned structure;

[0015] At least one first film layer and at least one second film layer are sequentially stacked on a patterned structure to form a stacked structure.

[0016] Optionally, the patterning material includes a medium material or a second functional material, wherein the second functional material has at least one of the same elements as the first functional material.

[0017] Optionally, the filler material includes a third functional material, which has at least one of the same elements as the first functional material.

[0018] Optionally, prior to the formation of the patterned structure, a pre-formed layer may be formed using a first functional material or a filler material.

[0019] Optionally, after the patterned structure is formed, a post-forming layer is formed using a filling material.

[0020] Optionally, prior to the formation of the laminated structure, a pre-formed layer is formed using a first functional material.

[0021] Optionally, after forming the first functional material on the defect prevention structure, the method further includes: forming the defect prevention structure on the first functional material.

[0022] Optionally, it also includes:

[0023] A bonding film layer is formed on the low-defect substrate to obtain a first intermediate structure;

[0024] A dielectric film layer and a bonding film layer are sequentially formed on a second substrate to obtain a second intermediate structure;

[0025] The bonding film layers of the first intermediate structure and the bonding film layers of the second intermediate structure are bonded together to obtain a bonding structure;

[0026] The first substrate and the defect prevention structure in contact with the first substrate in the bonding structure are removed to obtain a semiconductor device substrate.

[0027] In the technical solution provided by this invention, the thickness of the laminated structure is very small, and the size of the patterned structure is also very small. This results in minimal defects in both the laminated and patterned structures, providing a low-defect foundation for the first functional material. Simultaneously, the laminated and patterned structures have numerous interfaces, which can block dislocation movement and prevent the formation of penetrating dislocations in the first functional material. By providing a low-defect structure for the first functional material, the first functional material has a low probability of forming defects during its formation process. Furthermore, the interface blocking prevents the formation of penetrating dislocations after the first functional material is formed, thus avoiding dislocation generation both during and after formation. Attached Figure Description

[0028] Figure 1 This is a flowchart of a method for fabricating a novel semiconductor device according to an embodiment of the present invention;

[0029] Figure 2 A schematic diagram of a low-defect substrate prepared by a method for fabricating a novel semiconductor device according to another embodiment of the present invention;

[0030] Figure 3 A schematic diagram of a low-defect substrate prepared by a method for fabricating a novel semiconductor device according to another embodiment of the present invention;

[0031] Figure 4 A schematic diagram of a low-defect substrate prepared by a method for fabricating a novel semiconductor device according to another embodiment of the present invention;

[0032] Figure 5 A schematic diagram of a low-defect substrate prepared by a method for fabricating a novel semiconductor device according to another embodiment of the present invention;

[0033] Figure 6 A schematic diagram of a low-defect substrate prepared by a method for fabricating a novel semiconductor device according to another embodiment of the present invention;

[0034] Figure 7 A schematic diagram of a low-defect substrate prepared by a method for fabricating a novel semiconductor device according to another embodiment of the present invention;

[0035] Figure 8 A schematic diagram of a low-defect substrate prepared by a method for fabricating a novel semiconductor device according to another embodiment of the present invention;

[0036] Figure 9 A schematic diagram of a low-defect substrate prepared by a method for fabricating a novel semiconductor device according to another embodiment of the present invention;

[0037] Figure 10 A schematic diagram of a low-defect substrate prepared by a method for fabricating a novel semiconductor device according to another embodiment of the present invention;

[0038] Figure 11 A schematic diagram of a low-defect substrate prepared by a method for fabricating a novel semiconductor device according to another embodiment of the present invention;

[0039] Figure 12 A schematic diagram of a low-defect substrate prepared by a method for fabricating a novel semiconductor device according to another embodiment of the present invention;

[0040] Figure 13 A schematic diagram of a low-defect substrate prepared by a method for fabricating a novel semiconductor device according to another embodiment of the present invention;

[0041] Figure 14 This is a schematic diagram of the first intermediate structure prepared by a method for fabricating a novel semiconductor device according to another embodiment of the present invention;

[0042] Figure 15 A schematic diagram of the second intermediate structure prepared by a method for fabricating a novel semiconductor device according to another embodiment of the present invention;

[0043] Figure 16 A schematic diagram of a bonding structure prepared by a method for fabricating a novel semiconductor device according to another embodiment of the present invention;

[0044] Figure 17 This is a schematic diagram of a semiconductor device substrate prepared according to another embodiment of the present invention. Detailed Implementation

[0045] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0046] This invention provides a novel method for fabricating a semiconductor device, such as... Figure 1 As shown, it includes:

[0047] A defect prevention structure is formed on a first substrate, wherein the defect prevention structure includes any one or a combination of two of a stacked structure and a patterned structure; in some embodiments, the defect prevention structure includes only a stacked structure, or only a patterned structure, or a combination of a stacked structure and a patterned structure. When the defect prevention structure includes a combination of a stacked structure and a patterned structure, the stacked structure can be formed first, or the patterned structure can be formed first, or a spacer layer can be formed after one of them is formed, and then the other is formed.

[0048] A first functional material is formed on the defect prevention structure to form a low-defect substrate. In some embodiments, the defect prevention structure has very few defects, and the presence of interfaces can prevent the formation of dislocations. Therefore, the formation of the first functional material can produce a first functional material with very few defects, and at the same time, no dislocation defects caused by dislocation penetration will appear after formation.

[0049] In the technical solution provided by the embodiments of the present invention, the thickness of the laminated structure is very small, and the size of the patterned structure is also very small. Therefore, the defects in the laminated structure and the patterned structure are minimal, providing a low-defect foundation for the first functional material. Simultaneously, the laminated structure and the patterned structure have numerous interfaces, which can block the movement of dislocations and prevent the generation of penetrating dislocations in the first functional material due to dislocation movement. In the technical solution provided by the present invention, by providing a low-defect structure for the first functional material, the first functional material has a low probability of forming defects during its formation process. Furthermore, the blocking of interfaces can prevent the generation of penetrating dislocations in the first functional material after its formation, thus preventing the generation of dislocations both during and after formation.

[0050] As an optional implementation method, such as Figure 2 As shown, forming the defect prevention structure on the first substrate includes: sequentially and alternately stacking at least one first film layer and at least one second film layer on the first substrate to form a stacked structure. In some embodiments, during the formation of the stacked structure, materials with good lattice compatibility with the first functional material can be preferentially selected. For example, when the first functional material is germanium, the first film layer and the second film layer can be formed using germanium and germanium-silicon materials, respectively. As a preferred example, in order to achieve good lattice compatibility between the stacked structure and the substrate and the first functional material, the first film layer formed of germanium can be in contact with the first functional material, and the second film layer formed of germanium-silicon can be in contact with the substrate. Alternatively, when the first functional material is germanium, the first film layer and the second film layer can be formed using silicon and silicon-germanium materials, respectively. As a preferred example, in order to achieve good lattice compatibility between the stacked structure and the substrate and the first functional material, the first film layer formed of silicon-germanium can be in contact with the first functional material, and the second film layer formed of silicon can be in contact with the substrate. In some embodiments, the thickness of both the first film layer and the second film layer is less than 200 nm.

[0051] As an optional implementation method, such as Figure 3 and 4 As shown, forming the defect prevention structure on the first substrate includes: forming a pattern on the first substrate using a patterning material, and forming a filling material in the patterned grooves to form the patterned structure. In some embodiments, the patterning material in this embodiment refers to the material used to form the pattern. In some embodiments, such as Figure 3As shown, the patterning material can be a dielectric material, such as silicon nitride or silicon oxide. The filling material is preferably a material that is well-matched to the lattice of the first functional material. For example, when the first functional material is germanium, the filling material can be silicon-germanium or germanium-silicon, or it can also be germanium. In other embodiments, such as Figure 4 As shown, the patterning material can also be a material that is well-suited to the lattice of the first functional material. For example, when the first functional material is germanium, the patterning material can be silicon-germanium or germanium-silicon, and the filler material can be germanium. Figure 4 In the illustrated embodiment, the graphical size can be larger than... Figure 3 The graphical representation in the illustrated embodiment is smaller.

[0052] As an optional implementation method, such as Figure 5 As shown, forming the defect prevention structure on the first substrate includes:

[0053] At least one first film layer and at least one second film layer are sequentially and alternately stacked on a first substrate to form a stacked structure; in some embodiments, the formation process of the stacked structure can be similar to that of... Figure 2 The embodiments shown are the same;

[0054] A pattern is formed on a laminated structure using a patterned material, and a filling material is formed in the patterned grooves to form a patterned structure. In some embodiments, the formation process of the patterned structure can be similar to... Figure 3 The embodiments shown are the same.

[0055] This embodiment provides an example of a combination of a stacked structure and a patterned structure. In this embodiment, the stacked structure is formed first and then the patterned structure is formed. The combination of the two can further reduce defects and avoid dislocation penetration.

[0056] As an optional implementation method, such as Figure 6 As shown, forming the defect prevention structure on the first substrate includes:

[0057] A pattern is formed on a first substrate using a patterning material, and a filling material is formed in the patterned grooves to form a patterned structure; in some embodiments, the formation process of the patterned structure can be similar to... Figure 3 The embodiments shown are the same.

[0058] At least one first film layer and at least one second film layer are sequentially and alternately stacked on a patterned structure to form a laminated structure. In some embodiments, the formation process of the laminated structure can be similar to... Figure 2 The embodiments shown are the same;

[0059] In this embodiment, a combination of a layered structure and a patterned structure is provided. In this embodiment, the patterned structure is formed first and then the layered structure is formed. The combination of the two can further reduce defects and avoid dislocation penetration.

[0060] As an optional implementation, the patterning material includes a dielectric material or a second functional material, wherein the second functional material and the first functional material have at least one of the same elements. In some embodiments, the dielectric material may be a silicon nitride or oxide, or it may be a metal, a metal oxide material, or a metal nitride. In other embodiments, the second functional material and the first functional material have at least one of the same elements, thereby forming the same crystal lattice structure, such that the crystal lattice of the second functional material and the first functional material are well matched. For example, when the first functional material is germanium, the second functional material may be silicon-germanium or germanium-silicon.

[0061] As an optional implementation, the filler material includes a third functional material, which has at least one element identical to the first functional material. In some embodiments, having the same element as the first functional material facilitates the nucleation and growth of the first functional material on the third functional material. When the first functional material is in direct contact with the patterned structure, the third functional material can be the same material as the first functional material. In this case, the first functional material continues to be formed after the formation of the filler material, which simplifies the process. When the patterned structure is in direct contact with the stacked structure, the filler material can be selected from materials with good lattice compatibility with the stacked structure. For example, when the stacked structure is formed of germanium-silicon and germanium, and the film layer in direct contact between the stacked structure and the patterned structure is germanium-silicon, the filler material can be formed using germanium-silicon. As another example, when the stacked structure is formed of silicon-germanium and silicon, and the film layer in direct contact between the stacked structure and the patterned structure is silicon-germanium, the filler material can be silicon-germanium.

[0062] As an optional implementation method, such as Figure 7 As shown, prior to the formation of the patterned structure, the method further includes forming a pre-formed layer using a first functional material or a filler material. In some embodiments, the pre-formed layer can be formed using the first functional material or a filler material. As a preferred exemplary embodiment, the patterning material is silicon oxide or silicon nitride, and can also be a metal, metal oxide, or metal nitride. The filler material can be the first functional material. Figure 7These are merely exemplary embodiments; the preformed layer, patterned structure, and stacked structure can also be used in combination. For example, the stacked structure, preformed layer, and patterned structure can be formed sequentially, in which case the preformed layer can be a filler material or a first functional material. As another example, the preformed layer, patterned structure, and stacked structure can be formed sequentially, in which case the preformed layer preferably uses a filler material.

[0063] As an optional implementation method, such as Figure 8-9 As shown, after the patterned structure is formed, the process further includes forming a post-forming layer using a filler material. In some embodiments, such as... Figure 8 As shown, an exemplary combination of a layered structure and a graphical structure is illustrated, in which the layered structure is on top, the graphical structure is below, and a subsequent layer is formed between the layered structure and the graphical structure. Figure 9 As shown, an exemplary embodiment illustrates another way of combining a stacked structure with a graphical structure, in which the stacked structure is below, the graphical structure is above, and the subsequent layer is formed after the graphical structure is formed. Figure 10 As shown, an exemplary embodiment is illustrated using only a graphical structure, in which a post-forming layer is formed using a filler material, and a first functional material is formed on the post-forming layer.

[0064] In some alternative implementations, such as Figure 11 As shown, a pre-formed layer and a post-formed layer can coexist; in this case, the pre-formed layer is preferably formed using a filler material. Figure 11 Beyond the illustrated implementation, the laminated sections can also be combined for use, for example, forming the laminated structure with... Figure 11 The preformed layer is formed below the preformed layer, or the stacked structure is formed on top of the postformed layer.

[0065] As an optional implementation method, such as Figure 12 As shown, prior to the formation of the stacked structure, a pre-formed layer is formed using a first functional material.

[0066] As an optional implementation method, such as Figure 13 As shown, after forming the first functional material on the anti-defect structure, the method further includes: forming the anti-defect structure on the first functional material. In some embodiments, forming the anti-defect structure on the first functional material enables the anti-defect structure to remain in the substrate even after the substrate and the anti-defect structure in contact with the substrate are removed during the substrate formation process using bonding.

[0067] As an optional implementation method, such as Figure 14-17 As shown, it also includes:

[0068] A bonding film layer is formed on the low-defect substrate to obtain a first intermediate structure; in some embodiments, the first intermediate structure is as follows: Figure 14 As shown, the bonding film layer includes one or a combination of several of aluminum oxide, silicon oxide, or silicon nitride. In a preferred embodiment, the bonding film layer includes an aluminum oxide layer and a silicon nitride layer formed sequentially.

[0069] A dielectric film layer and a bonding film layer are sequentially formed on a second substrate to obtain a second intermediate structure; in some embodiments, the second intermediate structure is as follows: Figure 15 As shown, the bonding film layer comprises one or a combination of several of aluminum oxide, silicon oxide, or silicon nitride. In a preferred embodiment, the bonding film layer comprises a silicon nitride layer.

[0070] The bonding film layers of the first intermediate structure and the second intermediate structure are bonded together to obtain a bonding structure; in some embodiments, the bonding structure is as follows: Figure 16 As shown. In a preferred embodiment, the bonding process can employ melt bonding.

[0071] The first substrate and the defect prevention structure in contact with the first substrate in the bonding structure are removed to obtain a semiconductor device substrate. In some embodiments, the structure of the semiconductor device substrate is as follows: Figure 17 As shown, in a preferred embodiment, etching or grinding can be used to remove the first substrate and the defect prevention structure.

[0072] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A method of manufacturing a semiconductor device, characterized by, The method comprises: forming a defect prevention structure on the first substrate, wherein the defect prevention structure comprises any one or a combination of a stack structure and a patterned structure; forming a first functional material on the defect prevention structure to form a low-defect substrate; after forming the first functional material on the defect prevention structure, further comprising: forming a defect prevention structure on the first functional material; The method further comprises: forming a bonding film layer on the low-defect substrate to obtain a first intermediate structure; forming a dielectric film layer and a bonding film layer on a second substrate in sequence to obtain a second intermediate structure; bonding the bonding film layer of the first intermediate structure and the bonding film layer of the second intermediate structure to obtain a bonding structure; removing the first substrate and the defect prevention structure in contact with the first substrate in the bonding structure to obtain a semiconductor device substrate.

2. The method of claim 1, wherein, The forming of the defect prevention structure on the first substrate comprises: forming at least one layer of a first film layer and at least one layer of a second film layer on the first substrate in sequence and staggered to form a stack structure.

3. The method of claim 1, wherein, The forming of the defect prevention structure on the first substrate comprises: forming a pattern on the first substrate using a patterning material, and forming a filling material in the pattern groove to form a patterned structure.

4. The method of claim 1, wherein, The forming of the defect prevention structure on the first substrate comprises: forming at least one layer of a first film layer and at least one layer of a second film layer on the first substrate in sequence and staggered to form a stack structure; forming a pattern on the stack structure using a patterning material, and forming a filling material in the pattern groove to form a patterned structure.

5. The method of claim 1, wherein, The forming of the defect prevention structure on the first substrate comprises: forming a pattern on the first substrate using a patterning material, and forming a filling material in the pattern groove to form a patterned structure; forming at least one layer of a first film layer and at least one layer of a second film layer on the patterned structure in sequence and staggered to form a stack structure.

6. The method according to any one of claims 3-5, characterized in that, The patterning material comprises a dielectric material or a second functional material, wherein the second functional material has at least one same element as the first functional material.

7. The method according to any one of claims 3-5, characterized in that, The filling material comprises a third functional material, and the third functional material has at least one same element as the first functional material.

8. The method according to any one of claims 3-5, characterized in that, Before the patterned structure is formed, further comprising: forming a pre-formed layer using the first functional material or the filling material.

9. The method of any one of claims 3-5, wherein, After the patterned structure is formed, further comprising: forming a post-formed layer using the filling material.

10. The method of claim 2, wherein, Before the stack structure is formed, further comprising: forming a pre-formed layer using the first functional material.

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