Vacuum processing equipment, vacuum system, gas partial pressure control component and method for controlling gas partial pressure in vacuum processing chamber

Abstract

A vacuum processing device (110) for depositing a material on a substrate is provided. The vacuum processing device (110) comprises: a vacuum chamber, the vacuum chamber comprising a processing area (111); a deposition device (112) in the processing area (111) of the vacuum chamber; a cooling surface (113) inside the vacuum chamber; and one or more movable shielding members (220) between the cooling surface (113) and the processing area (111).

Description

Technical Field

[0001] Various embodiments of the present disclosure relate to a vacuum processing apparatus for depositing a material on a substrate and a method for maintaining a gas partial pressure (e.g., water vapor partial pressure) inside the vacuum processing apparatus when depositing the material on the substrate. In particular, various embodiments relate to controlling and / or regulating the partial pressure in a deposition region of a vacuum processing apparatus such as a physical vapor deposition (PVD) apparatus. Background Art

[0002] There are a number of techniques for depositing layers on substrates, such as sputtering deposition, physical vapor deposition (PVD), chemical vapor deposition (CVD), thermal evaporation and spin coating. The coated substrates can be used in a variety of applications and in a variety of technical fields. For example, the coated substrates can be used to manufacture electronic devices on wafers or to manufacture display devices. Display devices can be used to manufacture television screens, computer monitors, mobile phones, other handheld devices and similar devices to display information. In general, displays are produced by coating a substrate with a stack of layers of different materials.

[0003] To deposit a layer stack on a substrate, a configuration of process modules may be used. Processing of the substrate may be performed in a vacuum chamber at sub atmospheric pressure. Control of the process conditions (eg, partial pressure of the process gas) may affect the deposition process.

[0004] Different layer stack concepts are used in processing substrates. The layer stack concept can also include, for example, a layer stack with a transparent insulating layer and a transparent conductive oxide (TCO) layer, the TCO layer being, for example, an indium tin oxide (ITO) layer. For example, in the display industry, a layer comprising a transparent conductive oxide (e.g., ITO), a metal (e.g., MO, Al) and an active layer (e.g., an indium gallium zinc oxide (IGZO) layer) is coated on a substrate.

[0005] Quality expectations for deposition and sputtering are increasing along with rapid technological development. Physical vapor deposition processes (PVD) such as sputtering may show process drift due to varying gas partial pressures (e.g., varying water vapor partial pressure). This can be addressed by pre-sputtering or preventive maintenance.

[0006] The substrate may be carried by a carrier through the vacuum system. Typically, the carrier carrying the substrate is conveyed through the vacuum system using a conveyor system. A carrier supporting a substrate (such as a large area substrate) during deposition may be subjected to material deposition on the carrier. In vacuum processing equipment, the amount of material coated on the carrier increases the likelihood that the carrier will acquire moisture along with the tool operation time. Therefore, for moisture-sensitive processes, intermediate pre-sputtering measures or frequent preventive maintenance are beneficial to prevent process deviations.

[0007] For example, it has been shown that there is a dependence between the crystallization temperature and the water vapor partial pressure. Films deposited at low water vapor pressures show better orientation, while films deposited at high water vapor pressures do not show better orientation.

[0008] Therefore, controlling the partial pressure of gases such as water vapor can improve the deposition of thin films on substrates. Summary of the invention

[0009] Based on the above, the present disclosure provides a vacuum processing device for depositing materials on a substrate, a gas partial pressure control component for a vacuum processing device, and a method for controlling the gas partial pressure in a vacuum processing device. Other aspects, benefits, and characteristic structures of the present disclosure can be seen from the claims, the description, and the drawings.

[0010] According to one aspect of the present disclosure, a vacuum processing device for depositing a material on a substrate is provided. The vacuum processing device comprises: a vacuum chamber, the vacuum chamber comprising: a processing area; a deposition device in the processing area of ​​the vacuum chamber; a cooling surface located inside the vacuum chamber; and one or more movable shields between the cooling surface and the processing area.

[0011] According to another aspect of the present disclosure, a gas partial pressure control assembly for a vacuum processing chamber is provided. The gas partial pressure control assembly includes: a cooling surface for condensing gas; and a movable shield configured to adjust a fluid path from the vacuum processing chamber to the cooling surface.

[0012] According to another aspect of the present disclosure, a method for controlling partial pressure of gas in a vacuum processing chamber is provided, wherein the method comprises: cooling a surface for condensing the gas; and adjusting a fluid path in the vacuum processing chamber using a movable shield. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to understand in detail the manner in which the above-mentioned features of the present disclosure are structured, a more specific description of the present disclosure briefly summarized above may be obtained by reference to a number of embodiments. The drawings relate to a number of embodiments of the present disclosure and are described as follows.

[0014] Figure 1 A schematic diagram showing a vacuum processing system for depositing materials on a substrate according to various embodiments of the present disclosure;

[0015] Figure 2 A schematic diagram showing a vacuum processing apparatus for depositing materials on a substrate according to various embodiments of the present disclosure;

[0016] Figure 3 A schematic diagram showing a portion of a gas partial pressure control assembly having, for example, a drive motor for adjusting a movable shutter within a vacuum processing chamber according to various embodiments described herein; and

[0017] Figure 4 A flow chart showing a method for water vapor partial pressure regulation during material deposition on a substrate according to various embodiments described herein. DETAILED DESCRIPTION

[0018] Reference will now be made in detail to various embodiments of the present disclosure, one or more examples of which are shown in the accompanying drawings. In the following description of the drawings, the same reference numerals represent the same parts. In general, only the differences with respect to the various embodiments are described. Each example is provided to explain the present disclosure and is not intended to be limiting of the present disclosure. In addition, the characteristic structures stated or described as part of one embodiment can be used on other multiple embodiments or in combination with other multiple embodiments to produce yet another embodiment. It is intended that this specification includes such modifications and variations.

[0019] Multiple embodiments of the present disclosure provide a vacuum processing apparatus and a vacuum processing system. A cooling surface (e.g., a cooling surface of a cryogenic system) is provided to reduce the partial pressure of a gas, such as reducing the partial pressure of water vapor. Multiple embodiments of the present disclosure enhance the controllability of the pumping speed and achieve a stable gas partial pressure, such as a stable water vapor partial pressure.

[0020] Hereinafter, reference will be made to controlling the partial pressure of water vapor. However, various embodiments of the present disclosure may control the partial pressure of other gases in a similar manner.

[0021] As used herein, the term "substrate" shall also encompass flexible substrates, such as meshes or foils. Many embodiments described herein may be used to deposit materials on large area substrates, such as for display manufacturing. For example, a large area substrate may be a substrate corresponding to about 0.67 m 2 The surface area of ​​the 4.5th generation (0.73 × 0.92 m) corresponds to about 1.4 m 2 The fifth generation of the surface area of ​​(1.1m×1.3m) corresponds to about 4.29m 2The 7.5th generation of the surface area of ​​(1.95m×2.2m) corresponds to about 5.5m 2 8.5 of the surface area of ​​(2.2 m × 2.5 m), or even corresponds to about 8.7 m 2 (2.85 m x 3.05 m) of the surface area of ​​the 10th generation. Even larger generations, such as the 11th and 12th generations, and the corresponding surface areas can be realized similarly.

[0022] For example, manufacturers of touch panels have a broad and ever-changing product portfolio and need to quickly adapt to rapid technological developments. For example, indium tin oxide can be deposited in a vacuum processing device for manufacturing displays. According to some embodiments that can be combined with multiple other embodiments described herein, an indium tin oxide (ITO) film can be deposited by a sputtering system. In particular, a rotary cathode can be used in a sputtering system. In order to improve the ease of target exchange and system maintenance, a "cathode door" design is adopted. According to some embodiments that can be combined with multiple other embodiments described herein, the cathode door may include a sealing body or a sealing plate, which may be referred to as a sealing member; and a support for one or more sputtering cathodes, and the support may be coupled to a vacuum chamber of a vacuum processing device to seal the vacuum chamber. The cathode door can be opened by moving the sealing body or sealing plate of the cathode door away from the vacuum chamber to provide access to the target of the sputtering cathode.

[0023] Figure 1 A schematic diagram of a vacuum processing system 100 for depositing materials on a substrate is shown, for example. The vacuum processing system includes two or more vacuum chambers, the vacuum chambers including a transfer chamber 120 and a vacuum processing chamber 110. The transfer chamber may be a transfer vacuum chamber. In addition, the vacuum processing system 100 includes a substrate support 130 extending at least through the transfer chamber 120 and the vacuum processing chamber 110. The transfer chamber 120 and the vacuum processing chamber 110 may be separated by a partition wall 150. The partition wall includes a gate valve. The gate valve may be opened and closed to transfer a substrate or a carrier, respectively.

[0024] The vacuum processing system 100 includes at least one or more vacuum pumps 140, such as a turbomolecular pump, an oil diffusion pump, an ion getter pump, a scroll pump, or any other suitable vacuum pump. The vacuum processing system 100 includes one or more openings 114. These openings can be sealed with seals 115. The seals 115 can be included in a vacuum door, a vacuum gate, or any other removable sealing body or sealing plate. The atmosphere in the vacuum chamber can be controlled (e.g., separately controlled) by using the vacuum pump 140 to generate a technical vacuum.

[0025] According to various embodiments that can be combined with various other embodiments described herein, a "vacuum processing chamber" can be understood as a vacuum chamber in which a processing device for processing a substrate is configured. The processing device can be understood as any device for processing a substrate. For example, the processing device can include a deposition source for depositing a layer onto a substrate. Therefore, a vacuum processing chamber or a vacuum processing device including a deposition device (such as a deposition source or a deposition source assembly) can also be referred to as a vacuum deposition chamber, respectively. The vacuum processing chamber can be a physical vapor deposition (PVD) chamber, or it can also be a chemical vapor deposition (CVD) chamber.

[0026] The vacuum processing chamber 110 includes a processing area 111 and a deposition device 112 in the processing area 111. The deposition device may, for example, include one or more cathodes having a target of a material to be deposited on a substrate. The cathode may be a rotatable cathode having a magnetron therein. As an example, the cathode is connected to an alternating current (AC) power supply or a direct current (DC) power supply so that the cathode is biased in an alternating manner. As an example, the deposition source may include a rotating cathode (DC ITO, DC Al, DC MoNb, MF SiO2, MF IGZO).

[0027] The vacuum processing chamber 110 includes one or more cooling surfaces 113. One or more cooling surfaces may be provided in the cathode door. As described above, the cathode door may include a seal 115. The deposition device 112 may be coupled to the seal as a "cathode door" by a holder. The cathode door may further include a cooling surface 113.

[0028] A cryogenic refrigeration system may be provided in the vacuum processing equipment. However, such a cryogenic refrigeration system may be turned on or off. Additionally or alternatively, a cryogenic refrigeration system may be provided at a location away from one or more deposition sources. Multiple embodiments of the present disclosure provide a cooling surface (e.g., an efficient cryo-chiller) and a movable shield. Thus, the partial pressure of a gas, such as the partial pressure of water vapor, may be adjusted. For example, the partial pressure of water vapor may be fine-tuned and / or the partial pressure of water vapor may be controlled over a wide range. According to some embodiments that may be combined with multiple other embodiments described herein, a cooling surface, such as a surface area of ​​a cryogenic coil (cryo-coils), may be provided in the processing chamber. In particular, the cooling surface may be disposed adjacent to the processing area. The cooling surface may be disposed within the cathode gate, i.e., may be supported by the cathode gate and / or the seal 115. Having a cooling surface coupled to the cathode gate and / or the seal 115 behind the shield may maximize the pumping rate of water vapor and may, for example, prevent material from being coated on the cooling surface.

[0029] Various embodiments of the present disclosure relate to regulating or controlling the partial pressure of a gas, for example, regulating or controlling the partial pressure of water vapor. As the partial pressure of water vapor in a vacuum chamber decreases, reference may be made to "water pumping". Thus, various embodiments provide improved water pumping efficiency, particularly during deposition of layers on a substrate. Additionally or alternatively, various embodiments provide control over the rate of water pumping.

[0030] Figure 2 A schematic diagram of a vacuum processing chamber 110 is shown. Figure 2 A substrate 131 to be processed and at least one substrate holder 132 coupled to a substrate support are shown. The vacuum processing chamber 110 includes at least one deposition device 112 within the processing region 111. According to some embodiments, the deposition device can be provided by a holder ( Figure 2 The substrate support 130 is configured to transfer or convey a substrate or a first carrier provided with a substrate through one or more vacuum chambers. According to some embodiments that can be combined with other embodiments described herein, the substrate support provides a transfer path. The transfer path is provided by a processing system. For example, the transfer system can be a linear transfer system based on rollers, or can be a transfer system including a magnetic levitation system having a plurality of magnetic levitation boxes and a magnetic drive.

[0031] The vacuum processing chamber 110 includes one or more cooling surfaces 113. The one or more cooling surfaces may be disposed adjacent to the processing region 111. According to some embodiments, the processing apparatus provides a cooling surface coupled to the seal 115. The cooling surface 113 may be, for example, a pipe surface of a cryo coil cooler or a cooling surface of another cooling device or refrigerator assembly. For example, a gas cooler of the Polycold series may be used, and unlike a cryopump which has only a small surface area to trap, for example, water, the cryo coil surface of the Polycold series may be up to 1 m2 or more, or even up to 2 m2. 2 Or larger. Ultra-low gas partial pressure can be achieved.

[0032] The vacuum processing chamber 110 may include one or more fixed shields 210, which may at least partially surround the cooling surface 113. In addition, the vacuum processing chamber 110 includes one or more movable shields between the cooling surface and the processing area. The movable shield 220 may be a blinder-type, a flapping-type, a stepping type, a rotating shield, or any other movable shield. Figure 2 An exemplary rotating shield is shown.

[0033] In the closed position, the movable shield provides an enclosed cooling area. In the open position, the movable shield provides a fluid path between the cooling area and the processing area inside the vacuum processing chamber. The cooling surface causes condensation of high boiling point gases, such as water vapor, alcohol, ammonia. As a result, the gas partial pressure inside the vacuum processing chamber is reduced. Therefore, adjusting the fluid communication between the cooling surface and the processing area causes a change in the gas partial pressure inside the vacuum processing chamber. The fluid path between the cooling area and the processing area can provide pumping of water vapor in the processing area.

[0034] Figure 2 The example rotatable movable shielding member 220 is shown as an example and can be driven by a motor 230. The example rotatable movable shielding member 220 has a structure that can rotate around an axis ( Figure 2 The shaft may be coupled to a holder on at least one side. The shaft may be coupled to a feedthrough.

[0035] The vacuum processing chamber 110 includes a plurality of sensors 240 (eg, thermometers, pressure sensors, humidity sensors, residual gas sensors) within the vacuum processing chamber 110 to read and record characteristics of the vacuum processing chamber and provide necessary data for monitoring and controlling vacuum characteristics.

[0036] The vacuum processing system 100 may include a controller 250, for example, outside the vacuum processing system 100 (e.g., at atmospheric pressure). The controller 250 communicates with a plurality of sensors 240 and the motor 230. The communication between the controller 250 and the plurality of sensors 240 and between the controller 250 and the motor 230 may be by wired or wireless communication. The controller 250 may be a PLC (programmable logic controller) or any other controller including a CPU (central processing unit), a memory, and a user interface. The controller may actuate the rotating movable shield 220 or another movable shield to adjust and / or control the fluid path between the deposition area and the cooling surface. Thus, the gas partial pressure may be adjusted by actuating the movable shield, which may be controlled by the controller 250.

[0037] The present disclosure provides a gas partial pressure control assembly coupled to a vacuum processing apparatus. The gas partial pressure control assembly includes a cooling surface 113 for condensing gas and one or more movable shielding members to adjust the fluid path between the processing area and the cooling surface 113. According to some embodiments, one or more fixed shielding members may also be provided. The gas partial pressure control assembly includes a motor 230, and a gear box 231 (e.g., a planetary gear or any suitable gear) coupled to the movable shielding member. The gear box may be coupled to the motor via a belt 232. The motor, belt, and gear box may be located outside the vacuum processing chamber (e.g., in atmospheric pressure). Designed in Figure 2 The protective cover not shown in the figure is used to avoid personal injury. The gas partial pressure control assembly includes one or more holders and one or more support plates. The gas partial pressure control assembly includes a controller 250 outside the vacuum chamber, and the controller 250 communicates with multiple sensors 240 and motors 230 inside the vacuum chamber.

[0038] The controller 250 can adjust the opening position of the movable shutter. For example, the controller 250 can control the motor 230 to rotate and drive the angle of the planetary gear 231, which will excite the rotating shutter 220 through the feedthrough. The opening angle of the rotating shutter can control the speed of the water pump, or control the amount of fluid communication and gas condensation on the cooling surface, and thus control the partial pressure of the gas in the vacuum processing chamber.

[0039] Figure 3 An exemplary schematic diagram showing a portion of a gas partial pressure control assembly. Figure 3 The motor 230 is shown coupled to the gearbox 231 via a belt 232. Figure 3 ) and a support plate is provided outside the motor 230 for rotating the shielding member 220. The shielding member shield is arranged around the shaft ( Figure 3The shaft is coupled to a gearbox and a motor via a feed-through and a belt, respectively.

[0040] Various embodiments of the present disclosure enable a user to adjust the pumping rate of water or another process gas, for example, by controlling the movement of one or more movable shutters via a motor controlled by a controller. For example, the present disclosure enables a user to control and maintain a stable water vapor level within a vacuum chamber during processing.

[0041] When the vacuum is sealed and substrate processing is performed, the user or an automated system can remotely adjust the gas partial pressure within the vacuum chamber. In addition, the opening of the shield can be controlled, for example, by a planetary gear and motor method. Multiple embodiments of the present disclosure optimize the pumping efficiency of the cooling system and stabilize the gas partial pressure within a predetermined range.

[0042] According to some embodiments, the vacuum processing system may have a modular design, for example, having a separable vacuum transfer chamber 120, a vacuum processing chamber 110, and a vacuum track. In addition, the vacuum seal 115 may be considered as a module. Modularity provides advantages such as cost reduction, interoperability, design flexibility, non-generationally constrained expansion or update, and exclusivity.

[0043] Figure 4 A flow chart is shown of a method 300 for controlling partial pressure of gas inside a vacuum processing chamber 110. As shown in operation 310, the method includes cooling a surface for condensing gas. As shown in operation 320, the method includes adjusting a fluid path within a vacuum processing chamber having a movable shield.

[0044] According to some embodiments, the method includes an operation 330 of at least one sensor 240 of a plurality of sensors (e.g., a humidity sensor, a thermometer, a pressure sensor, a residual gas sensor) within the vacuum processing chamber, and an operation 340 of a controller 250 (e.g., a PLC controller) outside the vacuum processing chamber. The controller communicates with the plurality of sensors and with the motor. The controller can adjust the position of the movable shielding member by controlling the motor.

[0045] According to various embodiments of the present disclosure, controlling the pumping speed (eg, the pumping speed of water) enables a user to control the gas partial pressure (eg, the water vapor partial pressure) within the vacuum processing chamber by adjusting the fluid path between the cooling zone and the vacuum processing chamber.

[0046] According to some embodiments, which can be combined with various other embodiments, the method includes controlling a partial pressure of a gas, wherein the gas is water vapor.

[0047] The method of controlling the partial pressure of gas inside the vacuum chamber includes adjusting a movable shield to one of three positions: open, closed, and partially open. When the movable shield is in the closed position and the fluid path between the cooling area and the vacuum processing chamber is closed, the amount of water vapor removed from the vacuum processing chamber is minimal. When the movable shield is in the fully open position and the fluid path between the cooling area and the vacuum processing chamber is open, the amount of water vapor that can be removed from the vacuum processing chamber by the cooling surface is maximized.

[0048] When the movable shield is in a predetermined position (e.g., between a maximum open position and a closed position adjusted by a controller), the cooling surface can remove a certain amount of water vapor (a predetermined amount of water vapor) from the vacuum processing chamber. The position of the movable shield can be controlled, for example, using a feedback control loop (e.g., a PLC controller).

[0049] The method includes a controller 250 receiving data from the interior of the vacuum chamber, such as through one or more sensors 240, receiving data from the interior of the vacuum chamber (e.g., via a wired connection or wireless communication). The controller stores and processes the data. The controller includes a user interface that enables a user to program the controller or manually use the controller.

[0050] The method includes the controller 250 communicating with the motor 230 through a wired connection or wireless communication. The controller 250 can control the opening of the movable shielding member by controlling the motor 230.

[0051] The method includes receiving and processing data from the sensor 240. The controller can be programmed to control the opening of the movable shield. For example, the controller can read and check whether the water vapor partial pressure in the vacuum chamber is within a predetermined range, and correspondingly adjust the opening of the movable shield to maintain or reach the water vapor partial pressure within the predetermined range. The user can set or define the predetermined range of water vapor pressure for the controller.

[0052] According to some embodiments, the present disclosure provides a method for maintaining water vapor partial pressure within a desired range to provide optimized deposition quality.

[0053] According to various embodiments of the present disclosure, the controller 250 and the motor 230 and the gear box 231 are located outside the vacuum processing chamber. The cooling surface, the fixed and movable shields and the shield holders are all located inside the vacuum processing chamber. The motor drives the gears with a belt through the human machine interface (HMI) to precisely adjust the opening of the movable shield.

[0054] According to various embodiments of the present disclosure, the method enables a user to finely control and adjust the gas partial pressure inside a vacuum processing chamber during processing of a substrate. The method enables a user to remotely and precisely control the gas partial pressure inside a vacuum chamber when the vacuum chamber is closed.

[0055] Based on the above, a vacuum processing apparatus for depositing a material on a substrate and a method for depositing a material on a substrate overcome at least some of the problems in the desired field, for example, maintaining a stable partial pressure of water vapor within a predetermined range to improve deposition quality.

[0056] In summary, while the foregoing is directed to various embodiments of the present disclosure, various other and further embodiments may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is defined by the claims that follow.

Claims

1. A vacuum processing device comprising: a vacuum chamber having an opening; and A sealing member configured to seal the opening, the sealing member comprising: A holder for a deposition apparatus; and a cooling surface coupled to the seal, The vacuum chamber comprises a processing area, the deposition device is within the processing area of ​​the vacuum chamber, and the cooling surface is within the vacuum chamber, the vacuum processing device further comprising: one or more fixed shields at least partially surrounding the cooling surface, One or more movable shields are positioned between the cooling surface and the processing region, wherein when the one or more movable shields are in a closed position, the one or more fixed shields and the one or more movable shields provide an enclosure for the cooling surface, and when the one or more movable shields are in an open position, the one or more fixed shields and the one or more movable shields provide a fluid path between the cooling surface and the processing region.

2. The vacuum processing equipment according to claim 1, wherein the vacuum processing equipment comprises: A detachable sealing body or sealing plate comprising the sealing element.

3. The vacuum processing apparatus according to claim 2, further comprising: At least one vacuum pump in fluid communication with the vacuum chamber, wherein the vacuum pump is selected from the group consisting of a turbomolecular pump, an oil diffusion pump, an ion getter pump, and a scroll pump.

4. The vacuum processing apparatus of claim 1, wherein the fluid path is adjustable by adjusting an angle or position of the one or more movable shields in the open position. 5 . The vacuum processing equipment according to claim 1 , wherein the cooling surface is the surface of a plurality of pipelines or wherein the cooling surface is a low-temperature surface of a low-temperature cooling equipment.

6. A vacuum processing system comprising: The vacuum processing equipment according to any one of claims 1 to 4; and At least one transfer chamber.

7. A method for controlling the partial pressure of a gas in a vacuum processing chamber, the method being performed by the vacuum processing apparatus according to any one of claims 1 to 4, wherein the method comprises: cooling a surface to condense the gas, wherein the surface is at least partially surrounded by one or more fixed shields; and adjusting a fluid path within the vacuum processing chamber using a movable shield, wherein the one or more fixed shields and the movable shield provide an enclosure for the surface when the movable shield is in a closed position, and wherein the one or more fixed shields and the movable shield provide a fluid path between the surface and a processing area when the movable shield is in an open position.

8. The method of claim 7, comprising: at least one humidity sensor; and A controller is coupled to the at least one humidity sensor.

9. The method of any one of claims 7 to 8, wherein the surface has a 2 or larger surface area.

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