Radio frequency power package and radio frequency power device

Abstract

The present invention relates to a radio frequency, RF, power package and an RF power device. The RF power device comprises the RF power package. More particularly, the present invention relates to an RF power package, wherein an ESD device is arranged inside a package body or housing. According to the invention, the ESD device is provided inside the package and arranged on a terminal of the RF power package. In this way, the ESD sensing contact of the amplification circuit inside the RF power package can be better protected from ESD damage, even when the RF power package is plugged in.

Description

Technical Field

[0001] This invention relates to a radio frequency (RF) power package and an RF power device. More particularly, this invention relates to an RF power package in which an electrostatic discharge (ESD) device is disposed within the package body or housing. The RF power device includes this RF power package. Background Technology

[0002] RF power packages are known in the art. These RF power packages are configured to deliver power at various levels ranging from 1W to 5kW in frequencies from 100kHz to 40GHz. These packages include multiple terminals through which electrical signals are input or output, and through which power is provided or grounded.

[0003] RF power packages are mounted on printed circuit boards (PCBs). This board is part of a larger RF power device. This device includes electrical contacts that are accessible from the outside of the device. These contacts can be exposed to electrostatic discharge (ESD) events. As a result of these discharge events, components of the RF power device, such as the RF power package, may be damaged.

[0004] The performance of a device under high electrostatic voltage stress can be determined using models such as charging device models or human body models. Using a human body model, electrostatic discharge (ESD) that occurs when a person comes into contact with the device can be simulated. For example, according to the JEDEC JS-001 standard, the human body can be modeled as a 100pF capacitor and a 1500Ohm discharge resistor. During testing, the capacitor is charged to a discharge voltage, such as 2kV, and then discharged through a discharge resistor arranged in series with one terminal of the capacitor.

[0005] Typically, a device should meet specific ESD requirements, which are related to the level of discharge voltage that the device should be able to withstand without failing due to ESD-related damage.

[0006] The ESD performance of any device is primarily determined by the electronic circuitry arranged within it. RF power packages include amplification circuitry such as field-effect transistors (FETs), as well as passive circuitry for impedance matching and / or biasing. Each of these components is susceptible to ESD damage.

[0007] Gallium nitride (GaN) has recently emerged as a promising material for realizing RF power amplification devices. In these devices, the GaN-based power FETs used include gate, source, and drain contacts. The gate contact is formed by a Schottky contact with a small leakage current less than that under reverse bias.

[0008] The relatively small leakage current, less than that under reverse bias, makes GaN FETs susceptible to ESD-related damage. For example, if a human body model (HBM) test is performed by applying a positive voltage at the source or drain contact and grounding the gate contact, only a small fraction of the discharge voltage falls across the discharge resistor, while a reverse-biased Schottky diode exhibits high series resistance. Consequently, excessively high voltages may occur at the source or drain contact, potentially causing the GaN FET to break down.

[0009] RF power packaging is known in the art. An exemplary RF power package includes a package body or housing and a conductive substrate at least partially disposed within the package body or housing. The RF power package also includes a semiconductor die mounted on the conductive substrate and disposed within the package body or housing, wherein the semiconductor die includes an amplification circuit having ESD sensing contacts for inputting or outputting electrical signals. The RF power package further includes a plurality of terminals physically separated from the conductive substrate, and each terminal includes a first terminal surface provided outside the package body or housing and a second terminal surface provided inside the package body or housing, wherein one of the terminals constitutes an RF terminal configured to input a signal to be amplified by the amplification circuit or to output a signal amplified by the amplification circuit. The RF terminal is connected to the ESD sensing contacts via RF terminal connection points.

[0010] Known RF power packages are configured to be mounted on a PCB. ESD devices are typically placed on the PCB to provide the required ESD protection. These devices typically include a first ESD contact and a second ESD contact. In the active device, one of the first and second ESD contacts is grounded, while the other is connected directly or via other components to the RF power package requiring ESD protection. The ESD device prevents or limits any ESD pulses associated with discharge from reaching the ESD sensing contact.

[0011] ESD devices may include multiple diodes, transistors, or silicon controlled rectifiers disposed between a first ESD contact and a second ESD contact. For example, one or more diodes may be arranged such that the anode of the diode is connected to the first ESD contact and the cathode of the diode is connected to the second ESD contact; while one or more other diodes may be configured such that the anode of the diode is connected to the second ESD contact and the cathode of the diode is connected to the first ESD contact. In this way, a low-ohmic discharge path can be provided for both positive and negative voltages occurring at the terminal to be protected. By providing a low-ohmic discharge path, most of the discharge current will flow through the ESD device, thereby protecting the device or component with ESD sensing contacts.

[0012] The applicant discovered that the installation process for a known RF power package can fail. The applicant also discovered that such failures could be attributed to ESD damage occurring during the installation of the known RF power package. Summary of the Invention

[0013] The purpose of this invention is to provide an RF power package that can be installed or operated while eliminating or at least reducing the risk of ESD damage.

[0014] According to the present invention, this objective is achieved by the RF power package as defined in claim 1, characterized in that the RF power package further includes an ESD device for protecting the amplifier circuit from damage caused by electrostatic discharge. The ESD device includes a first ESD contact and a second ESD contact. Furthermore, one of the plurality of terminals constitutes a mounting MNT terminal, on which the ESD device is mounted. The first ESD contact is electrically connected directly or indirectly to the ESD sensing contact of the amplifier circuit via a first ESD connection line or via at least a portion of the RF terminal connection line, and the second ESD contact is electrically grounded during use.

[0015] According to the present invention, the ESD device is provided inside the package and arranged on the terminals of the RF power package. In this way, the ESD sensing contacts of the amplifier circuit can be better protected from ESD damage, even when the RF power package is installed.

[0016] The conductive substrate can be configured to be electrically grounded at least during use. Alternatively, one of the multiple terminals can form a grounded GND terminal, which is electrically grounded during use. This GND terminal is preferably arranged adjacent to the MNT terminal. The second ESD contact of the ESD device can be electrically connected to the GND terminal or to the conductive substrate via a second ESD connection line.

[0017] The first ESD connection line may include a common portion shared with the RF terminal connection line, and a separate portion extending between one end of the common portion and the first ESD contact. The impedance at the terminal of the common portion, viewed from the ESD device, is preferably much greater than the impedance at the terminal of the common portion, viewed from the amplifier circuit. In this way, the ESD device does not significantly affect the RF performance of the RF power package. This is particularly important for preserving the operating frequencies of the RF power package, which are typically in the range of 100 kHz to 40 GHz, when impedance is estimated.

[0018] The amplifier circuit may include a field-effect transistor (FET), such as a gallium nitride-based FET or a silicon-based laterally diffused metal oxide semiconductor (LDMOS) transistor. In this case, the ESD sensing contact of the amplifier circuit is electrically connected to or formed from the gate or drain of the FET. Alternatively, the ESD sensing contact of the amplifier circuit may be a bonding pad or bonding strip electrically connected to the drain or gate of the FET. Furthermore, the RF terminal connection may include an RF bonding wire, one end of which is bonded to a bonding pad or bonding strip. The other end of the RF bonding wire may be bonded to an RF terminal. Alternatively, the RF terminal connection may include an impedance matching network comprising the RF bonding wire. This impedance matching network may include a shunt capacitor having a non-grounded terminal and a grounded terminal that is electrically grounded at least during use. In this case, the other end of the RF bonding wire may be bonded to the non-grounded terminal of the shunt capacitor, and the RF terminal connection may include further RF bonding wires between the non-grounded terminal of the shunt capacitor and the RF terminal. Impedance matching networks are typically used at the input (gate) of an amplifier circuit. However, impedance matching networks can also be used at the output (drain) of an amplifier circuit.

[0019] ESD devices may include an ESD semiconductor die with integrated ESD lines, and the ESD semiconductor die includes a semiconductor substrate having a rear surface, the ESD semiconductor die being fixedly connected to a second surface of an MNT terminal via the rear surface. A first ESD contact and a second ESD contact can be disposed on the front surface of the ESD semiconductor die, the front surface being opposite the rear surface of the semiconductor substrate. Furthermore, a first ESD connection line may include a bonding wire electrically connecting an RF terminal to the first ESD contact, and a second ESD connection line may include a bonding wire electrically connecting a second ESD contact to a GND terminal or a conductive substrate. The bonding wire of the first ESD connection line may extend between the RF terminal and the first ESD contact or between an ESD sensing contact and the first ESD contact. Additionally, one of a plurality of terminals may constitute a non-connected (NC) terminal. In this case, the MNT terminal can be a GND terminal, an RF terminal, or an NC terminal. In the context of this invention, an NC terminal is a terminal that is not electrically connected to electronic circuitry on a PCB on which an RF power package is mounted. Typically, the voltage at the NC terminal fluctuates during operation.

[0020] Alternatively, the ESD device may include an ESD semiconductor die with integrated ESD lines, and the ESD semiconductor die includes a conductive semiconductor substrate having a rear surface, the ESD semiconductor die being fixedly connected to a second surface of the MNT terminal via the rear surface. In this case, the rear surface forms a first ESD contact, and a second ESD contact is disposed on the front surface of the ESD semiconductor die, the front surface opposite the rear surface of the semiconductor substrate. The second ESD connection line may include a bonding wire electrically connecting the second ESD contact to a GND terminal or a conductive substrate. Furthermore, the MNT terminal may be an RF terminal. Alternatively, one of the plurality of terminals may constitute a non-connected NC terminal. In the latter case, the MNT terminal may be an NC terminal, and the first ESD connection line may include a bonding wire electrically connecting the MNT terminal to an RF terminal connection line. In this latter case, the bonding wire of the first ESD connection line may extend between the RF terminal and the MNT terminal or between the ESD sensing contact and the MNT terminal.

[0021] Alternatively, the ESD device may include an ESD semiconductor die with integrated ESD lines, and the ESD semiconductor die includes a conductive semiconductor substrate having a rear surface, the ESD semiconductor die being fixedly connected to a second surface of the MNT terminal via the rear surface. In this case, the rear surface forms a second ESD contact, and a first ESD contact is disposed on the front surface of the ESD semiconductor die, the front surface opposite the rear surface of the semiconductor substrate. The first ESD connection line may include a bonding wire electrically connecting the first ESD contact to an RF terminal connection line. In this case, the bonding wire of the first ESD connection line may extend between the RF terminal and the first ESD contact or between the ESD sensing contact and the first ESD contact. Furthermore, the MNT terminal may be a GND terminal, or one of a plurality of terminals constituting a non-connected NC terminal. In the latter case, the MNT terminal may be an NC terminal, and the second ESD connection line may include a bonding wire electrically connecting the MNT terminal to a GND terminal or a conductive substrate.

[0022] The conductive substrate may include a generally rectangular base and a protrusion. The generally rectangular base is separated from the MNT terminal in a first direction, and the protrusion is integrally connected to the generally rectangular base and extends in the first direction such that one end of the protrusion is arranged to be separated from the MNT terminal in a second direction perpendicular to the first direction. The generally rectangular base may be the same as the rectangular base separated from the generally rectangular base having rounded or chamfered corners. The second ESD connection line includes a bonding wire connected to the conductive substrate, or even the bonding wire connected to the protrusion of the conductive substrate, and preferably parallel to the second direction. In this embodiment, the shape of the conductive substrate differs from the common rectangular form to allow the ESD device to be grounded. Furthermore, since the bonding wires extending from the output (e.g., drain) of the amplifier circuit typically extend towards the RF terminal in the first direction, the electromagnetic coupling between the bonding wires of the second ESD connection line and these bonding wires is small or even non-existent. Similar considerations are adopted when using ESD devices to protect the input of amplifier circuits.

[0023] RF power packages can be flat, leadless packages such as Quad Flat No-leads (QFN) or Dual Flat No-leads (DFN) packages. In this case, one of the multiple terminals can correspond to its respective pad in the flat, leadless package. Alternatively, RF power packages can be molded leadframe packages or non-molded leadframe packages such as ceramic leadframe packages, wherein each of the multiple terminals corresponds to a respective lead in the molded leadframe package or the non-molded leadframe package.

[0024] In the case of a molded leadframe package, the leads are part of the leadframe before the RF power package is separated from the leadframe. In this case, the conductive substrate is physically and electrically connected to the leadframe by a plurality of separate connecting parts before the package is separated from the leadframe, wherein each connecting part is divided into a first connecting part and a second connecting part during separation of the package from the leadframe, for example by cutting, punching, or pushing, the first connecting part remaining connected to the conductive substrate and the second connecting part remaining connected to the leadframe. The RF power package may also include a frame portion connected to and extending from at least one first connecting part portion, wherein the ESD device is mounted on the frame portion. Furthermore, the frame portion may extend between a pair of first connecting part portions. More specifically, the frame portion and the first connecting part portions can be integrally molded. The ESD device can adopt a configuration similar to the ESD semiconductor die described above, i.e., the ESD device may have a first ESD contact and a second ESD contact located on top of the semiconductor die, or one of these contacts may be arranged on the back side of the semiconductor substrate of the ESD semiconductor die.

[0025] According to a second aspect, the present invention provides an RF power device. The RF power device includes a printed circuit board and the aforementioned RF power package, the printed circuit board including a plurality of solder pads. The RF power package is mounted to the printed circuit board such that each terminal of the RF power package is fixedly connected, for example, to a respective solder pad among the plurality of solder pads by soldering. The printed circuit board may include individual solder pads or metal coins integrated within the printed circuit board, the individual solder pads or metal coins being fixedly connected, for example, to a conductive substrate of the RF power package by soldering. Attached Figure Description

[0026] The invention will now be described in more detail with reference to the accompanying drawings, wherein the same reference numerals are used to refer to the same or similar components. In the drawings:

[0027] Figures 1 to 7 A schematic top view of a variant embodiment of an RF power package according to the present invention is shown;

[0028] Figure 8 A perspective view of a molded package according to the present invention is shown;

[0029] Figure 9 It shows Figure 8 A cross-sectional view of the molded package; and

[0030] Figure 10 Examples of RF power devices according to the present invention. Detailed Implementation

[0031] Figure 1An embodiment of an RF power package 1A according to the present invention is shown. Package 1A is a DFN type package, including a conductive substrate in the form of a die pad 10, on which a semiconductor die 30 is mounted. An RF power FET is integrated on the semiconductor die 10. Figure 1 Only the bonding strip 31 connected to the gate of the power FET and the bonding strip 32 connected to the drain of the power FET are shown. The source of the power FET is not shown, but this contact is grounded through a via in the semiconductor substrate of the semiconductor die 30 or through a conductive semiconductor substrate. It should be noted that when the single RF power package 1A is mounted on a PCB, the RF power FET is grounded through a grounding pad fixed to the PCB or a die pad 10 on a metal block in the PCB. Simultaneously, heat dissipation of the RF power FET is also achieved through the die pad 10.

[0032] As shown in the figure, the RF power package 1A includes two additional semiconductor dies. A first semiconductor die 40 is disposed between the input terminal RF1 and the gate bonding strip 31. The semiconductor die 40 includes an integrated capacitor, the first terminal of which is connected to the bonding strip 41. The second terminal of the capacitor is grounded. This grounding can be achieved through vias in the semiconductor die 40 or through the conductive semiconductor substrate of the semiconductor die 40. Grounding is further achieved through die pads 10 on which the semiconductor die 40 is mounted.

[0033] Multiple bond lines B6 extend between the input terminal RF1 and the ungrounded terminal of the capacitor on the semiconductor die 40. Multiple other bond lines B5 extend between the ungrounded terminal of the capacitor and the gate bond strip 31. This implements an LC-type impedance matching network.

[0034] A further semiconductor die 50 is disposed between semiconductor die 30 and output terminal RF2. This die also includes a capacitor, one terminal of which is connected to bonding strip 51. The other terminal is grounded in a similar manner to the capacitor on semiconductor die 40.

[0035] Multiple bonding wires B3 extend between the drain bonding strip 32 and the output terminal RF2. These bonding wires form the RF terminal connection line between the drain contact and the output terminal RF2. Further B4 extend between the drain bonding strip 32 and the ungrounded terminal of the capacitor on the semiconductor die 50. This forms a shunt LC series network connected to the drain bonding strip 32.

[0036] The RF power FET on semiconductor die 30 includes an output capacitor. For large devices, the output capacitor can have a degrading effect on the RF performance of the FET. To avoid this degradation, a shunt LC network is configured as a shunt inductor, which resonates with the output capacitor at the same or near frequency as the operating frequency of the RF power package. The series capacitance of the shunt LC series network prevents the DC path from being grounded.

[0037] Figure 1 Additional terminal 20 is shown. A ground terminal GND is provided to ground when package 1A is mounted on a PCB. The non-connecting terminals NC are not electrically connected to any traces on the PCB. These terminals may be connected to pads on the PCB, for example, by soldering, but these pads are not connected to any other traces and have a floating or undefined potential during operation.

[0038] exist Figure 1 In this configuration, an ESD device in the form of an ESD semiconductor die 60 is mounted on a non-connection terminal NC. The terminal on which the ESD semiconductor die is mounted is also called the mounting terminal MNT. The ESD semiconductor die 60 includes a first ESD contact in the form of a first bonding pad 61 and a second ESD contact in the form of a second bonding pad 62. The output terminal RF2 is connected to the first bonding pad 61 via a first ESD connection line in the form of a bonding wire B1. The second bonding pad 62 is connected to the conductive substrate 10 via a second ESD connection line in the form of a bonding wire B2.

[0039] exist Figure 1 In this configuration, the ESD semiconductor die 60 is designed to protect the RF power FET from ESD-related damage caused by electrostatic discharge occurring at the output terminal RF2 and reaching the drain contact of the power FET. In this case, the drain of the power FET is considered the ESD sensing contact. Figure 1 As shown, the first ESD contact is indirectly electrically connected to the ESD sensing contact via a first ESD connection line through at least a portion of an RF terminal connection line formed by bonding wire B3. The second ESD contact is grounded via bonding wire B2 and conductive substrate 10.

[0040] The connection between the first ESD contact and the ESD sensing contact can also be a direct connection. Figure 2 An example of a connection line is shown. In this case, the semiconductor die 60 has a conductive semiconductor substrate. The first ESD contact takes the form of a first bonding pad 61 disposed on the top of the semiconductor die 60, while the second ESD contact takes the form of conductive metal disposed on the back side of the semiconductor substrate of the semiconductor die 60.

[0041] The first ESD connection line includes a bonding wire B1. However, the bonding wire B1 extends indirectly between the drain bonding strip 32 and the first bonding pad 61. The second ESD contact is grounded through the ground terminal GND.

[0042] exist Figure 3 In this context, the ESD semiconductor die 70 also provides protection for the RF power FET from ESD-related damage caused by electrostatic discharge occurring at the input terminal RF1 and reaching the gate contact of the RF power FET. In this case, the gate of the power FET is considered the ESD sensing contact. Similar to the ESD semiconductor die 60, the ESD semiconductor die 70 includes a first ESD contact in the form of a first bonding pad 71 and a second ESD contact in the form of a first bonding pad 72. The first bonding pad 71 is connected to the input terminal RF1 via a bonding wire B7. The second bonding pad 72 is grounded via a bonding wire B8 connected to the conductive substrate 10.

[0043] Figures 4 to 6 Further embodiments of an RF power package of the DFN type according to the present invention are shown. These embodiments differ in that: a) the ESD semiconductor die includes a first ESD contact and a second ESD contact located on the upper surface of the ESD semiconductor die, or one of these contacts is arranged on the back side of the conductive semiconductor substrate of the ESD semiconductor die; and b) the ESD semiconductor die is mounted on a mounting terminal MNT.

[0044] picture First ESD contact Second ESD contact MNT terminal 4 Top surface Top surface RF2 5 Top surface back GND 6 back Top surface RF2

[0045] Technicians can easily understand it. Figures 4 to 6 The ESD protection measures shown can be additionally or alternatively used at the input to protect the gate of the RF power FET.

[0046] Figure 7 An embodiment of an RF power package 1G is shown, in which a conductive substrate 10 includes a protrusion 12 extending in a first direction D1 away from an essentially rectangular base 11. The protrusion 12 and the base 11 are integrally connected. In this embodiment, a second ESD connection line includes a bonding line B2 that connects a second bonding pad 62 to the protrusion 12 for grounding. As shown, the bonding line B2 extends along a second direction D2 perpendicular to the first direction D1. A first ESD contact is realized on the back side of the conductive semiconductor base of the ESD semiconductor die 60.

[0047] exist Figure 7 In this embodiment, the orthogonal arrangement of these lines minimizes the electromagnetic coupling between bonding line B2 and any one of bonding lines B3 and B4. This electromagnetic coupling can lead to the loss of RF signals, thereby reducing the efficiency of the package.

[0048] exist Figures 1 to 7 Several embodiments with different configurations of ESD semiconductor dies are illustrated. Those skilled in the art will readily understand that other embodiments are possible within the context of this invention. Furthermore, in Figures 1 to 7 The molding compound is omitted. In flat, leadless packages such as DFN or QFN packages, the molding compound covers the conductive substrate 10, terminals 20, and semiconductor dies 30, 40, 50, 60, and 70 in a manner known in the art.

[0049] Figure 8 A molded leadframe package 100 is shown. This type of package is achieved by first connecting a leadframe, comprising a plurality of leads 20, to a conductive heat sink 10 using connecting parts protruding from the leadframe. These connecting parts are riveted to the heat sink 10 by rivets 103. The combination of the leadframe and the heat sink 10 is thus arranged in a mold for applying the molding compound. Once cured, the molding compound provides mutual fixation between the heat sink 10 and the leads 20, meaning that when the package 100 is separated from the leadframe and the connecting parts are cut, the heat sink 10 and the leads 20 remain fixed to each other.

[0050] Figure 8 The package 100 after separation from the lead frame and without molding compound is shown. As a result of separating the package 100 from the lead frame, each of the connecting parts provided at the corner of the heat sink 10 is divided into a first connecting part portion 102 that is held to be connected to the heat sink 10 and a second connecting part portion (not shown) that is held to be connected to the lead frame.

[0051] Package 100 includes frame portions 101 on both sides of heat sink 10, the frame portions 101 being integrally connected to first connection portion 102. Frame portions 101 include holes 104 for stress relief purposes. Similar holes 105 provide a distance 101A between the output lead RF2 and the first connection portion 102 and frame portions 101 in the output lead RF2.

[0052] In package 100, an ESD semiconductor die 60 is disposed on top of frame portion 101. To attach the semiconductor die 60 to the heat sink 10, an adhesive that is at least partially liquid when attaching the semiconductor die 60 is used. Therefore, a portion of the adhesive can flow out to other areas on the heat sink 10. For small-size packages, the area between adjacent dies disposed on the heat sink 10 should be minimized as much as possible. However, when dies are too close together, there is a risk of adhesive flowing from one die to another. This could potentially cause an accidental short circuit at the contacts on the top surface of the die. Figure 8 In this case, because the frame portion 101 is located at a higher position relative to the semiconductor die 30, the risk of this adhesive causing an accidental short circuit between the first ESD contact of the ESD semiconductor die 60 and ground is lower.

[0053] Figure 8 A large output lead RF2 and multiple small input leads 20 are also shown, one of which is directly or indirectly connected to the gate of the RF power FET. It should be noted that additional leads may be provided at the input or output terminals.

[0054] exist Figure 8 The diagram shows a single die 30 with a drain bonding strip 32 and an input bonding pad 31 connected to its respective leads. It should be noted that the input bonding pad 31 can be directly connected to the gate of the RF power FET disposed on the semiconductor die 30, or via an impedance matching network. Similarly, additional wiring can be provided at the input and output terminals of the die 30 or other dies (not shown) of package 100.

[0055] Figure 9 It shows Figure 8 The image shows a cross-sectional view of package 100 along line CC. As shown, package 100 is provided with a cover 108, which includes a cover base 108A and a cover sidewall 108B extending from the cover base 108A. An applied molding compound forms a package body 110, which includes a lower portion 110B that secures leads 20, RF1, RF2, and heat sink 10 to each other, and an upper portion 110A. Leads 20, RF1, and RF2 extend through package body 110. Inside the package, bonding wires are bonded to the exposed surfaces of leads 20, RF1, and RF2.

[0056] Adhesive 111 is disposed between the upper portion 110A and the cover sidewall 108B to securely attach the cover 108 to the package body 110. In this way, an air cavity 109 is formed inside the package 100. This type of package is therefore known as an air cavity molding package. It should be noted that the cover 108 can be achieved by using the same molding compound as the package body 110.

[0057] In other embodiments, the cover 108 is formed simultaneously with the molding compound used to implement the package body 110. In these packages, no air cavity is present, and all necessary electronic connections need to be implemented between the applied molding compounds. Air cavity molding packages offer superior RF performance compared to these fully molded packages because the molding compound does not suffer from losses that would otherwise surround electronic components such as bonding wires.

[0058] Figure 10 An example of an RF power device 200 according to the present invention is shown. Device 200 includes, for example,... Figure 1 The RF power package is a type of package 1A, which is mounted on PCB 201. PCB 201 is typically a multilayer board that allows for metal lines on multiple different layers.

[0059] PCB 201 includes solder pads 202A and 202B, on which leads 20 and a conductive substrate 10 are fixedly mounted by soldering. As shown, leads RF1 and RF2 are connected to metal lines 203 on PCB 201 (only partially shown). Non-connecting leads NC are connected to solder pads 202A, but these pads are not further connected to electronic circuitry on PCB 201. Ground lead GND is connected to the ground plane of PCB 201 through via 204.

[0060] Those skilled in the art should be aware that the RF power device 200 may have more configurations, such as those for accommodating... Figure 8 and Figure 9 Different types of packaging, such as molded packaging.

[0061] The invention has been explained above through detailed embodiments. However, it should be noted that various modifications may be made without departing from the scope of the invention as defined by the appended claims. For example, the ESD protection described above can also provide protection for other line contacts within the package, rather than for damage caused by discharges reaching the gate or drain of the RF power FET. Similarly, in these embodiments, the ESD semiconductor die may be disposed on terminals. Likewise, the applicant recognizes that the above inventive concept can also be used in other types of packages, not RF power packages, but still having a package body or housing, a conductive substrate, multiple terminals, and a semiconductor die mounted on the conductive substrate. An example of such a package could be an electronic package in which the semiconductor die includes electronic circuitry having one or more ESD sensing contacts.

Claims

1. An RF power package (1A-1G); 100), including: Encapsulation body (110) or housing; A conductive substrate (10) is at least partially disposed in the encapsulation body or housing; A semiconductor die (30) is mounted on the conductive substrate and disposed in the package body or housing, the semiconductor die including an amplification circuit having electrostatic discharge (ESD) sensing contacts for inputting or outputting electrical signals; Multiple terminals (20) are physically separated from the conductive substrate, and each terminal includes a first terminal surface provided outside the package body or housing and a second terminal surface provided inside the package body or housing, wherein one of the multiple terminals constitutes an RF terminal (RF1, RF2), the RF terminal is configured to input a signal to be amplified by the amplification circuit or output a signal amplified by the amplification circuit, and the RF terminal is electrically connected to the ESD sensing contact via an RF terminal connection line; The RF power package is characterized in that it further includes an ESD device (60) for protecting the amplifier circuit from damage caused by electrostatic discharge, wherein the ESD device includes a first ESD contact (61) and a second ESD contact (62), wherein one of the plurality of terminals constitutes a mounting MNT terminal (MNT) on which the ESD device is mounted. Wherein, the MNT terminal is the RF terminal, and wherein, one of the plurality of terminals constitutes a grounded GND terminal (GND), i.e., electrically grounded in use, wherein the GND terminal is arranged adjacent to the MNT terminal, and wherein, at least in use, the second ESD contact is electrically grounded through a bonding wire extending between the second ESD contact and the GND terminal, and wherein, the first ESD contact is electrically connected to the ESD sensing contact via a first ESD connection line, at least through a portion of the RF terminal connection line; or Wherein, the MNT terminal is a terminal adjacent to the RF terminal, wherein the first ESD contact is electrically connected to the ESD sensing contact via a first ESD connection line at least through a portion of the RF terminal connection line and a bonding wire that electrically connects the first ESD contact and the RF terminal, and wherein the second ESD contact is electrically grounded at least during use.

2. The RF power package according to claim 1, wherein, The amplifier circuit includes a field-effect transistor (FET).

3. The RF power package according to claim 2, wherein, The FET is a gallium nitride-based FET or a silicon-based laterally diffused metal-oxide-semiconductor (LDMOS) transistor.

4. The RF power package according to claim 2, wherein, The ESD sensing contact of the amplifier circuit is electrically connected to the gate or drain of the FET, or is formed by the gate or drain of the FET.

5. The RF power package according to claim 3, wherein, The ESD sensing contact of the amplifier circuit is a bonding pad or bonding strip electrically connected to the gate or drain of the FET, and wherein the RF terminal connection line includes an RF bonding line with one end bonded to the bonding pad or bonding strip.

6. The RF power package according to claim 5, wherein, The other end of the RF bonding wire is bonded to the RF terminal.

7. The RF power package according to claim 5, wherein, The RF terminal connection includes an impedance matching network, which contains the RF bonding wire. The impedance matching network includes a shunt capacitor having a non-grounded terminal and a grounded terminal, the grounded terminal being configured to be electrically grounded at least during use. The other end of the RF bonding wire is bonded to the ungrounded terminal of the shunt capacitor, and the RF terminal connection wire includes a further RF bonding wire located between the ungrounded terminal of the shunt capacitor and the RF terminal.

8. The RF power package according to any one of claims 1 to 7, wherein, The MNT terminal is a GND terminal, or wherein the MNT is a terminal among the plurality of terminals that constitutes a non-connected NC terminal; wherein the ESD device includes an ESD semiconductor die, on which ESD lines are integrated, and the ESD semiconductor die includes a semiconductor substrate having a rear surface, the ESD semiconductor die being fixedly connected to the second terminal surface of the MNT terminal via the rear surface, the first ESD contact and the second ESD contact being arranged on the front surface of the ESD semiconductor die, the front surface being opposite to the rear surface of the semiconductor substrate.

9. The RF power package according to any one of claims 1 to 7, wherein, The MNT terminal is the RF terminal, wherein the ESD device includes an ESD semiconductor die with integrated ESD lines, and the ESD semiconductor die includes a semiconductor substrate having a rear surface. The ESD semiconductor die is fixedly connected to the second terminal surface of the MNT terminal via the rear surface. The first ESD contact and the second ESD contact are arranged on the front surface of the ESD semiconductor die, which is opposite to the rear surface of the semiconductor substrate. The first ESD connection line includes a bonding line extending between the first ESD contact and the RF terminal.

10. The RF power package according to any one of claims 1 to 7, wherein, The MNT terminal is the RF terminal, wherein the ESD device includes an ESD semiconductor die, on which ESD lines are integrated, and the ESD semiconductor die includes a conductive semiconductor substrate having a rear surface. The ESD semiconductor die is fixedly connected to the second terminal surface of the MNT terminal via the rear surface, the rear surface forming the first ESD contact, and the second ESD contact is disposed on the front surface of the ESD semiconductor die, the front surface being opposite to the rear surface of the semiconductor substrate.

11. The RF power package according to any one of claims 1 to 7, wherein, The MNT terminal is the terminal that constitutes the NC terminal among the plurality of terminals. The ESD device includes an ESD semiconductor die with integrated ESD lines. The ESD semiconductor die includes a conductive semiconductor substrate with a rear surface. The ESD semiconductor die is fixedly connected to the second terminal surface of the MNT terminal via the rear surface. The rear surface forms the first ESD contact. The second ESD contact is disposed on the front surface of the ESD semiconductor die, and the front surface is opposite to the rear surface of the semiconductor substrate.

12. The RF power package according to any one of claims 1 to 7, wherein, The MNT terminal is the terminal adjacent to the RF terminal, wherein the ESD device includes an ESD semiconductor die with integrated ESD lines, and the ESD semiconductor die includes a conductive semiconductor substrate having a rear surface. The ESD semiconductor die is fixedly connected to the second terminal surface of the MNT terminal via the rear surface, the rear surface forming the second ESD contact, and the first ESD contact is disposed on the front surface of the ESD semiconductor die, the front surface being opposite to the rear surface of the semiconductor substrate.

13. The RF power package according to claim 12, wherein, The MNT terminal is a GND terminal; Alternatively, one of the plurality of terminals constitutes an NC terminal, the MNT terminal is an NC terminal, and the second ESD connection line includes a bonding wire that electrically connects the MNT terminal to the GND terminal or the conductive substrate.

14. The RF power package according to any one of claims 1 to 7, wherein, The conductive substrate includes a rectangular base and a protrusion. The rectangular base is separated from the MNT in a first direction (D1). The protrusion is integrally connected to the rectangular base and extends in the first direction such that one end of the protrusion is arranged to be separated from the MNT terminal in a second direction (D2) perpendicular to the first direction.

15. The RF power package according to claim 13, wherein, The conductive substrate includes a rectangular base and a protrusion. The rectangular base is separated from the MNT in a first direction (D1). The protrusion is integrally connected to the rectangular base and extends in the first direction such that one end of the protrusion is arranged to be separated from the MNT terminal in a second direction (D2) perpendicular to the first direction. The bonding wire of the second ESD connection line electrically connects the MNT terminal to the protrusion of the conductive substrate and extends parallel to the second direction.

16. The RF power package according to any one of claims 1 to 7, wherein, The RF power package is a flat, leadless package, wherein each of the plurality of terminals corresponds to a respective pad of the flat, leadless package.

17. The RF power package according to claim 16, wherein, The RF power package is a square flat leadless QFN or a dual in-line flat leadless DNF package.

18. The RF power package according to any one of claims 1 to 7, wherein, The RF power package is a molded leadframe package or a non-molded leadframe package, wherein each of the plurality of terminals corresponds to a respective lead of the molded leadframe package or the non-molded leadframe package.

19. An RF power device, comprising: A printed circuit board that includes multiple solder pads; as well as RF power package according to any one of claims 1 to 18; The RF power package is mounted on the printed circuit board such that each terminal of the RF power package is fixedly connected to a respective pad among the plurality of pads.

20. The RF power device according to claim 19, wherein, The printed circuit board includes individual solder pads or metal blocks integrated in the printed circuit board, the individual solder pads or metal blocks being fixedly connected to the conductive substrate of the RF power package.

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