Method for adjusting wafer warpage and device and system thereof

Abstract

The present disclosure provides a method and device and system for adjusting wafer warpage, and relates to the technical field of semiconductor chips, and is used for adjusting the warpage of a wafer. The method for adjusting wafer warpage comprises the following steps: providing a database; the database comprises at least one corresponding relationship between the wafer warpage change and the process condition; obtaining the wafer warpage to be adjusted; determining the wafer warpage change according to the obtained wafer warpage and the corresponding target warpage; determining the corresponding relationship to be used for adjusting the wafer warpage according to the determined wafer warpage change; determining the process condition corresponding to the wafer warpage change according to the determined corresponding relationship; processing the wafer according to the determined process condition, adjusting the wafer warpage, so that the adjusted wafer warpage meets the target warpage. The method for adjusting wafer warpage is applied to a three-dimensional memory.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor chip technology, and in particular to a method, apparatus, and system for adjusting wafer warpage. Background Technology

[0002] As the feature size of memory cells approaches the lower limit of process technology, planar processes and manufacturing technologies become challenging and costly, causing the storage density of 2D or planar NAND flash memory to approach its upper limit. To overcome the limitations of 2D or planar NAND flash memory, the industry has developed memory with a three-dimensional structure (3D NAND), which increases storage density by arranging memory cells three-dimensionally on a substrate.

[0003] As the number of stacked layers in 3D NAND becomes increasingly numerous and the structure increasingly intricate, the overall stress distribution on the wafer containing this 3D NAND is prone to unevenness, leading to wafer warping. Wafer warping can cause numerous problems, such as layer delamination, layer misalignment, wafer cracking, unstable layout alignment, and difficulty in wafer bonding. Therefore, controlling the overall stress of the wafer is becoming increasingly important. Summary of the Invention

[0004] The embodiments of this disclosure provide a method, apparatus, and system for adjusting wafer warpage, used to adjust the warpage of a wafer.

[0005] To achieve the above objectives, the embodiments of this disclosure adopt the following technical solutions:

[0006] On one hand, a method for adjusting wafer warpage is provided. The method includes: providing a database; the database including at least one correspondence, which is a correspondence between the amount of wafer warpage change and process conditions; obtaining the warpage of the wafer to be adjusted; determining the amount of wafer warpage change based on the obtained warpage and the corresponding target warpage; determining the correspondence to be used to adjust the wafer warpage based on the determined warpage change; determining the process conditions corresponding to the amount of wafer warpage change based on the determined correspondence; and processing the wafer according to the determined process conditions to adjust the wafer warpage so that the adjusted wafer warpage meets the target warpage.

[0007] The method for adjusting wafer warpage provided in some embodiments of this disclosure first establishes a correspondence between the amount of wafer warpage variation and the process conditions based on the influence of process conditions on wafer stress and warpage. Then, a database is established. During wafer fabrication, the warpage of each wafer can be obtained, and the amount of warpage variation can be determined based on the target warpage of each wafer. Then, based on the amount of warpage variation of each wafer, the corresponding relationship and process conditions to be used can be determined sequentially. Finally, the corresponding relationship and process conditions can be retrieved from the database, and the operating equipment can be controlled to process the wafer and adjust the wafer warpage.

[0008] When adjusting wafer warpage using the method provided in this disclosure, the warpage of each wafer can be acquired. Then, based on the acquired warpage, different correspondences or different process conditions can be determined for different wafers, thereby enabling targeted and effective adjustment of the warpage of each wafer. This wafer warpage adjustment method can cover warpage differences between different batches of wafers, and even differences between different wafers within the same batch. Furthermore, when changes in certain processes cause changes in wafer warpage, it avoids the need to re-evaluate and adjust the wafer warpage adjustment method due to process changes.

[0009] Furthermore, the wafer warpage adjustment method provided in this disclosure can be applied to the entire wafer fabrication process. When it is necessary to adjust the wafer warpage, the required process conditions can be retrieved from the database without manually calculating the method required to adjust the wafer warpage. This can greatly reduce the manpower required to adjust the wafer warpage and simplify the wafer fabrication process.

[0010] In some embodiments, obtaining the warpage of the wafer to be adjusted includes: obtaining the warpage of the wafer in a first direction to obtain a first warpage; obtaining the warpage of the wafer in a second direction to obtain a second warpage; and obtaining a third warpage based on the difference between the first warpage and the second warpage. Wherein, the first direction and the second direction are perpendicular to each other, and the plane defined by the first direction and the second direction is parallel to the plane containing the wafer.

[0011] In some embodiments, determining the warpage change of the wafer based on the acquired warpage and the corresponding target warpage includes: obtaining a first warpage change based on the first warpage and the target warpage corresponding to the first warpage; obtaining a second warpage change based on the second warpage and the target warpage corresponding to the second warpage; and obtaining a third warpage change based on the third warpage and the target warpage corresponding to the third warpage.

[0012] In some embodiments, the database includes at least two adjustment methods, the number of correspondences is multiple, and at least two of the correspondences are based on the same adjustment method. Determining the correspondence to be used to adjust the warpage of the wafer based on the determined warpage change includes: determining the adjustment method based on the determined warpage change; determining at least one correspondence based on the adjustment method from the multiple correspondences; and determining the correspondence to be used to adjust the warpage of the wafer from the determined at least one correspondence based on the determined warpage change.

[0013] In some embodiments, processing the wafer according to the determined process conditions includes: processing the wafer according to the determined process conditions using a determined adjustment method.

[0014] In some embodiments, the determined warpage change includes a first warpage change corresponding to a first warpage, a second warpage change corresponding to a second warpage, and a third warpage change corresponding to a third warpage. The at least two adjustment methods include a first adjustment method and a second adjustment method. The first adjustment method is used to adjust the third warpage, and the second adjustment method is used to adjust the first warpage and the second warpage.

[0015] In some embodiments, determining the adjustment method based on the determined warpage change includes: judging the first warpage change, the second warpage change, and the third warpage change respectively to confirm whether it is necessary to adjust their respective warpages; if it is necessary to adjust the first warpage, the second warpage, and the third warpage, then it is determined that adjusting the warpage of the wafer should utilize the first adjustment method and the second adjustment method; if it is not necessary to adjust at least one of the first warpage and the second warpage, but it is necessary to adjust the third warpage, then it is determined that adjusting the warpage of the wafer should utilize the first adjustment method; if it is necessary to adjust the first warpage and the second warpage, but it is not necessary to adjust the third warpage, then it is determined that adjusting the warpage of the wafer should utilize the second adjustment method.

[0016] In some embodiments, adjusting the warpage of the wafer using the first adjustment method and the second adjustment method includes: performing a first processing on the wafer according to the first adjustment method and corresponding process conditions to adjust the third warpage; obtaining the first warpage and the second warpage of the wafer after the first adjustment, and determining the change in the first warpage and the change in the second warpage; and performing a second processing on the wafer according to the second adjustment method, corresponding process conditions, and the change in the first warpage and the change in the second warpage to adjust the first warpage and the second warpage.

[0017] In some embodiments, the first adjustment method is to form ion-doped polycrystalline silicon in the gate line gaps of the wafer; the second adjustment method is to form a stress-adjusting layer on the back side of the wafer.

[0018] In some embodiments, the process conditions based on the correspondence of the first adjustment method include: the type of dopant ions and the doping concentration.

[0019] In some embodiments, there are multiple correspondences based on the first adjustment method, and each correspondence represents the correspondence between the third warpage change and the dopant concentration based on a set type of dopant ion; different correspondences are based on different types of dopant ions.

[0020] In some embodiments, the correspondence based on the first adjustment method includes the following correspondence: the dopant ion is a phosphorus ion; the change in the third warpage is positively correlated with the concentration of the dopant ion.

[0021] In some embodiments, the process conditions based on the correspondence of the second adjustment method include: the material and thickness of the stress-adjusting layer.

[0022] In some embodiments, there are multiple correspondences based on the second adjustment method, each correspondence representing the correspondence between the first warpage change and the second warpage change based on the material of the set stress adjustment layer and the thickness of the stress adjustment layer; different correspondences are based on different materials of the stress adjustment layer.

[0023] In some embodiments, the correspondence based on the second adjustment method includes the following correspondence: the material of the stress adjustment layer is silicon nitride; the first warpage change is negatively correlated with the thickness of the stress adjustment layer; and the second warpage change is negatively correlated with the thickness of the stress adjustment layer.

[0024] In some embodiments, the database includes multiple adjustment methods, with at least two adjustment methods based on the same set process step. Before determining the adjustment method based on the determined warpage change, the method for adjusting wafer warpage further includes: determining the process step in which the wafer is located; and determining at least two corresponding adjustment methods based on the process step.

[0025] In some embodiments, the method for adjusting wafer warpage further includes: obtaining the warpage of the wafer after adjustment; determining the actual change in the warpage of the wafer based on the warpage obtained before adjustment and the warpage obtained after adjustment; and feeding back the actual change in the warpage to the database.

[0026] In some embodiments, the method for adjusting wafer warpage further includes updating the correspondence used to adjust the wafer warpage based on the actual change in warpage fed back to the database.

[0027] In some embodiments, before providing the database, the method for adjusting wafer warpage further includes: establishing a database. Establishing the database includes: for each correspondence, providing multiple sample wafers, the multiple sample wafers being at the same process step; obtaining the warpage of each sample wafer; processing the sample wafers separately using different process conditions to adjust the warpage of the sample wafers; obtaining the adjusted warpage of the sample wafers; determining the actual change in warpage of the sample wafers based on the warpage obtained before adjustment and the warpage obtained after adjustment; and establishing a correspondence between the actual change in warpage and the process conditions corresponding to the sample wafers.

[0028] In another aspect, an apparatus for adjusting wafer warpage is provided. The apparatus for adjusting wafer warpage includes: a memory, a receiver, a processor, and a transmitter. The memory stores a database; the database includes at least one correspondence, which is a correspondence between the amount of wafer warpage change and process conditions. The receiver is configured to receive the warpage of the wafer to be adjusted from a detection device. The processor is configured to determine the amount of wafer warpage change based on the wafer warpage received by the receiver and a corresponding target warpage; determine the correspondence to be used to adjust the wafer warpage based on the determined warpage change; and determine the process conditions corresponding to the amount of wafer warpage change. The transmitter is configured to send the process conditions determined by the processor to an operating device, so that the operating device processes the wafer according to the determined process conditions.

[0029] In some embodiments, the receiver is further configured to receive the adjusted warpage of the wafer from the detection device. The processor is further configured to determine the actual change in the warpage of the wafer based on the warpage obtained before adjustment and the warpage obtained after adjustment; and to feed back the actual change in warpage to the database.

[0030] On another front, an advanced process control system is provided. The advanced process control system includes: an apparatus for adjusting wafer warpage as described in any of the above embodiments; a detection device configured to detect wafer warpage and transmit the detected wafer warpage to the apparatus for adjusting wafer warpage; and an operating device configured to process the wafer according to process conditions from the apparatus for adjusting wafer warpage to adjust the wafer warpage.

[0031] In some embodiments, the operating apparatus includes an ion implantation apparatus and / or a deposition apparatus.

[0032] In another aspect, a computer-readable storage medium is provided. The computer-readable storage medium stores computer program instructions that, when executed on a computer, cause the computer to perform a method for adjusting wafer warpage as described in any of the above embodiments.

[0033] It is understood that the beneficial effects of the wafer warpage adjustment apparatus, advanced process control system and computer-readable storage medium provided in the above embodiments of this disclosure can be referred to the beneficial effects of the wafer warpage adjustment method described above, and will not be repeated here. Attached Figure Description

[0034] To more clearly illustrate the technical solutions in this disclosure, the accompanying drawings used in some embodiments of this disclosure will be briefly described below. Obviously, the drawings described below are only drawings of some embodiments of this disclosure, and those skilled in the art can obtain other drawings based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams and are not intended to limit the actual size of the product, the actual process of the method, etc. involved in the embodiments of this disclosure.

[0035] Figure 1 This is a structural diagram of a wafer according to one implementation method;

[0036] Figure 2 This is a structural diagram of another wafer according to one implementation method;

[0037] Figure 3 This is a flowchart of a method for adjusting wafer warpage according to some embodiments;

[0038] Figure 4 for Figure 3 The flowchart shown is one type of S200;

[0039] Figure 5 for Figure 3 The flowchart shown is one type of S300;

[0040] Figure 6 for Figure 3 The flowchart shown is one type of S400;

[0041] Figure 7 for Figure 6 One flowchart of S410 in the flowchart shown;

[0042] Figure 8 for Figure 7 One flowchart of S412a in the flowchart shown;

[0043] Figure 9 A flowchart of another method for adjusting wafer warpage according to some embodiments;

[0044] Figure 10 for Figure 3 One flowchart of S100 in the flowchart shown;

[0045] Figure 11 This is a partial structural diagram of a wafer according to some embodiments;

[0046] Figure 12 for Figure 11 A cross-sectional view of the wafer shown along the CC' direction;

[0047] Figure 13 This is a schematic diagram illustrating one correspondence based on some embodiments;

[0048] Figure 14 This is a schematic diagram illustrating another correspondence according to some embodiments;

[0049] Figure 15 A structural diagram of an apparatus for adjusting wafer warpage according to some embodiments;

[0050] Figure 16 This is a structural diagram of an advanced process control system according to some embodiments;

[0051] Figure 17 This is a structural diagram of another advanced process control system according to some embodiments. Detailed Implementation

[0052] The technical solutions in some embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments provided in this disclosure are within the scope of protection of this disclosure.

[0053] In the description of this disclosure, it should be understood that the terms “center,” “upper,” “lower,” “front,” “rear,” “left,” “right,” “vertical,” “horizontal,” “top,” “bottom,” “inner,” and “outer,” etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this disclosure and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this disclosure.

[0054] Unless the context otherwise requires, throughout the specification and claims, the term "comprising" is interpreted as open-ended and encompassing, meaning "including, but not limited to." In the description of the specification, terms such as "one embodiment," "some embodiments," "exemplary embodiment," "exemplary," or "some examples," etc., are intended to indicate that a particular feature, structure, material, or characteristic associated with that embodiment or example is included in at least one embodiment or example of this disclosure. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics mentioned may be included in any suitable manner in any one or more embodiments or examples.

[0055] Hereinafter, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of embodiments of this disclosure, unless otherwise stated, "a plurality of" means two or more.

[0056] In describing some embodiments, the term "coupled" and its derivative expressions may be used. For example, the term "coupled" may be used in describing some embodiments to indicate that two or more components have direct physical or electrical contact. However, the term "coupled" may also refer to two or more components that do not have direct contact with each other but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the content of this document.

[0057] "At least one of A, B and C" has the same meaning as "at least one of A, B or C", both including the following combinations of A, B and C: only A, only B, only C, combinations of A and B, combinations of A and C, combinations of B and C, and combinations of A, B and C.

[0058] "A and / or B" includes the following three combinations: A only, B only, and a combination of A and B.

[0059] The use of “applies to” or “configured to” in this article implies an open and inclusive language that does not preclude applicability to or configuration to devices that perform additional tasks or steps.

[0060] In addition, the use of “based on” implies openness and inclusivity, because processes, steps, calculations or other actions “based on” one or more of the stated conditions or values ​​may in practice be based on additional conditions or values ​​beyond those stated.

[0061] As used herein, “about,” “approximately,” or “approximately” includes the stated value and the average value within an acceptable range of deviation from the given value, wherein the acceptable range of deviation is determined by a person skilled in the art taking into account the measurement under discussion and the error associated with the measurement of the given quantity (i.e., the limitations of the measurement system).

[0062] In this disclosure, the meanings of “on,” “above,” and “above” should be interpreted in the broadest possible sense, such that “on” means not only “directly on” something, but also includes “on” something with intermediate features or layers in between, and “above” or “above” means not only “above” or “above” something, but also “above” or “above” something without intermediate features or layers in between (i.e., directly on something).

[0063] This document describes exemplary embodiments with reference to cross-sectional views and / or plan views, which are idealized exemplary drawings. In the drawings, the thickness of layers and regions is enlarged for clarity. Therefore, variations in shape relative to the drawings are contemplated due to, for example, manufacturing techniques and / or tolerances. Thus, exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include shape deviations due to, for example, manufacturing processes. For example, etched regions shown as rectangular would typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to show the actual shapes of the regions of the device, nor are they intended to limit the scope of the exemplary embodiments.

[0064] As used herein, the term "substrate" refers to a material on which subsequent material layers can be added. The substrate itself may be patterned. The material added to the substrate may be patterned or may remain unpatterned. Furthermore, the substrate may include a variety of semiconductor materials such as silicon, germanium, gallium arsenide, indium phosphide, etc. Alternatively, the substrate may be made of a non-conductive material such as glass, plastic, or sapphire wafer.

[0065] The term "three-dimensional memory" refers to a semiconductor device formed by strings of memory cell transistors (referred to herein as "memory cell strings," such as NAND memory cell strings) arranged in an array on the main surface of a substrate and extending in a direction perpendicular to the substrate. As used herein, the term "perpendicularly" means nominally perpendicular to the main surface of the substrate (i.e., the lateral surface).

[0066] Currently, in the process of fabricating wafers with 3D NAND, process errors and abnormal conditions are inevitable in different semiconductor manufacturing processes, which will cause differences in the warpage between different batches of wafers, and even differences in the warpage between different wafers in the same batch.

[0067] In one implementation, one or more batches of wafers are typically selected, their warpage is tested, and a method for adjusting the wafer warpage is determined. This method is then applied to subsequent batches of wafers. However, relying solely on a small amount of data is clearly insufficient to accurately reflect the uniformity of warpage across all wafers, to cover the differences in warpage between different batches, or even the differences between different wafers within the same batch.

[0068] In the above implementation methods, the method for adjusting wafer warpage is basically fixed. Once certain processes change (for example, the ion implantation concentration changes according to different process requirements), the wafer warpage will change. In order to adjust the wafer warpage caused by process changes, the method for adjusting wafer warpage needs to be re-evaluated and adjusted.

[0069] Furthermore, within the same batch of wafers, the warpage of one wafer may differ significantly from that of other wafers. However, using the methods described above for adjusting wafer warpage makes it difficult to effectively adjust the warpage of that particular wafer, thus reducing wafer production yield.

[0070] In another approach, the warpage of each batch of wafers is typically measured, and then the interaction between front-end and back-end semiconductor manufacturing processes is considered to manually calculate the method needed to adjust the wafer warpage. However, this not only requires significant manpower but also complicates the process of fabricating wafers with 3D NAND.

[0071] Based on this, some embodiments of this disclosure provide a method for adjusting wafer warpage. For example... Figure 3 As shown, the preparation method includes: S100 to S600.

[0072] S100, provides a database. The database includes at least one correspondence between the amount of wafer warpage variation and process conditions.

[0073] For example, the database mentioned above may include one correspondence or multiple correspondences.

[0074] For example, in each correspondence, the change in wafer warpage can vary with changes in process conditions. The relationship between the change in wafer warpage and process conditions can be linear. Of course, the relationship between the change in wafer warpage and process conditions can also be non-linear, specifically related to the influence of process conditions on wafer stress.

[0075] For example, each correspondence can correspond to a semiconductor manufacturing process. The process conditions in this correspondence can refer to the process parameters in a particular semiconductor manufacturing process. Different process parameters correspond to different correspondences. Within the same correspondence, the specific value of the wafer warpage variation corresponds one-to-one with the value of the corresponding process parameter.

[0076] Taking the linear relationship between wafer warpage variation and process parameters as an example, we can see two possibilities: First, a positive correlation exists between wafer warpage variation and process parameters, meaning the warpage variation increases as the process parameter values ​​increase. Second, a negative correlation exists between wafer warpage variation and process parameters, meaning the warpage variation decreases as the process parameter values ​​increase.

[0077] S200, obtain the warpage of the wafer to be adjusted.

[0078] The types of wafers mentioned above include various types, and you can choose the appropriate type based on your actual needs.

[0079] For example, the wafer described above can be a substrate.

[0080] For example, the aforementioned wafer can be a product processed on a substrate through multiple semiconductor manufacturing processes (such as ion implantation, photolithography, deposition, polishing, etc.). This product can be, for example, a memory chip or a semiconductor structure bonded to peripheral circuitry.

[0081] For example, the material of the substrate 11 can be single-crystal silicon (Si), single-crystal germanium (Ge), silicon-germanium (GeSi), or silicon carbide (SiC); it can also be silicon-on-insulator (SOI) or germanium-on-insulator (GOI); or it can be other materials, such as gallium arsenide or other III-V compounds.

[0082] For example, the wafer to be adjusted mentioned above can be any one wafer from the same batch of wafers. Within this same batch, the warpage of different wafers can be the same or different. When the warpage of different wafers is different, the difference between the warpages of different wafers can be small or large. This disclosure does not limit this.

[0083] For example, wafer warpage refers to the distance between the highest and lowest points of a wafer when it is laid flat.

[0084] For example, the warpage of the aforementioned wafer can be detected by using a warpage measuring instrument (also known as a flatness measuring instrument), or by using a pre-made measuring template, or by using a non-contact measurement method such as optical measurement, or by using a contact measurement method.

[0085] For example, if the detected values ​​are -50μm, -35μm, -20μm, 10μm, 19μm, 33μm, or 47μm, it indicates that the warpage of the wafer to be adjusted is -50μm, -35μm, -20μm, 10μm, 19μm, 33μm, or 47μm, respectively. A warpage of 0μm indicates that the wafer is relatively flat. The larger the absolute value of the warpage, the greater the degree of wafer warpage.

[0086] For example, the warpage state of a wafer can include: the edge of the wafer bending towards its back side and bulging in the middle, or the edge of the wafer bending towards its front side and concave in the middle. The warpage state of the wafer can be distinguished by the positive or negative value of the warpage degree.

[0087] S300: Based on the obtained warpage and the corresponding target warpage, determine the amount of warpage change of the wafer.

[0088] For example, the target warpage refers to the warpage that the wafer needs to achieve. When the wafer warpage is at the target warpage, the overall stress distribution of the wafer is more uniform, and the wafer is more flat, which can ensure the smooth progress of subsequent adjacent semiconductor manufacturing processes.

[0089] Understandably, due to the intricate and complex structure of 3D NAND, the wafer warpage can be adjusted multiple times during the overall manufacturing process of 3D NAND. "Subsequent adjacent semiconductor manufacturing processes" may, for example, include at least a portion of the semiconductor manufacturing process between two adjacent adjustments to wafer warpage.

[0090] For example, the target warpage can be -5μm, -3μm, -1μm, 0μm, 1μm, 2μm, or 5μm, or any value between -5μm and 5μm. It should be noted that this is merely an example of the target warpage value and does not limit the actual target warpage of the wafer in different semiconductor manufacturing processes.

[0091] For example, the change in wafer warpage is the difference between the target warpage and the acquired warpage. After determining the wafer warpage and the corresponding target warpage, the difference between the two (i.e., the target warpage minus the acquired warpage) can be used to obtain the change in wafer warpage.

[0092] For example, if the obtained warpage is 20 μm and the target warpage is 0 μm, then the warpage change of the wafer is -20 μm.

[0093] For example, consider wafers from the same batch. Within this same batch, different wafers may have the same target warpage. Since the warpage of different wafers in the same batch may differ, the amount of warpage variation may also differ.

[0094] S400 determines the corresponding relationship to be used to adjust the warpage of the wafer based on the determined amount of warpage change.

[0095] For example, after determining the amount of warpage change in the wafer, the appropriate correspondence to be used for adjusting the wafer warpage can be determined by analogy and selection from at least one correspondence included in the database, based on requirements. Correspondingly, the semiconductor manufacturing process to be used for adjusting the wafer warpage can also be determined.

[0096] Understandably, after determining the amount of warpage change in the wafer, the value of the warpage change can be judged first to confirm whether the warpage of the wafer needs to be adjusted.

[0097] For example, if the warpage change is 0 μm, meaning the obtained warpage is the same as the corresponding target warpage, then subsequent semiconductor manufacturing processes can be performed without adjusting the warpage of the wafer.

[0098] For example, if the warpage change is greater than 0 μm or less than 0 μm, meaning the obtained warpage is different from the corresponding target warpage, then it is necessary to determine the appropriate correspondence to adjust the warpage of the wafer.

[0099] S500 determines the process conditions corresponding to the amount of warpage change of the wafer based on the established correspondence.

[0100] For example, since the specific value of the change in wafer warpage corresponds one-to-one with the value of the corresponding process parameter in the same correspondence, after determining the correspondence and the change in warpage, the corresponding process conditions can be determined in the correspondence based on the relationship between the change in wafer warpage and the process parameters (i.e., process conditions).

[0101] S600 processes the wafer according to the determined process conditions, adjusting the wafer warpage to ensure that the adjusted wafer warpage meets the target warpage.

[0102] For example, after determining the correspondence and process conditions, the appropriate semiconductor manufacturing process can be executed on the wafer by controlling the operating equipment to change the overall stress distribution of the wafer. Since the process conditions correspond to the warpage variable, after changing the overall stress distribution of the wafer, the wafer warpage can be adjusted so that the actual change in wafer warpage is substantially consistent with the change in warpage determined according to the correspondence.

[0103] For example, the aforementioned operating device can be a semiconductor tool corresponding to a certain semiconductor manufacturing process. This operating device is capable of performing the corresponding semiconductor manufacturing process. For instance, the operating device can perform ion implantation, deposition, or polishing processes, etc.

[0104] For example, the same correspondence can be used to adjust the warpage for the same batch of wafers. Since the amount of warpage change can be different for different wafers, when determining the process conditions corresponding to the amount of warpage change of the wafer based on the determined correspondence, different process conditions can be determined for different wafers, and then targeted processing can be carried out on different wafers according to different process conditions.

[0105] In other words, this disclosure allows for the acquisition of the warpage of each wafer. Regardless of whether there is a significant difference between the warpage of this wafer and the warpage of other wafers, the amount of warpage variation of each wafer can be determined based on its actual condition. Furthermore, the corresponding relationship and process conditions can be determined based on the amount of warpage variation. This allows for the processing of each wafer according to its actual condition and corresponding process conditions, ensuring that the warpage of each wafer can be effectively adjusted and reaches or approaches its target warpage.

[0106] Therefore, the wafer warpage adjustment method provided in some embodiments of this disclosure first establishes a correspondence between the wafer warpage variation and process conditions based on the influence of process conditions on wafer stress and warpage, and then establishes a database. During wafer fabrication, the warpage of each wafer can be obtained, and the warpage variation can be determined based on the target warpage of each wafer. Then, based on the warpage variation of each wafer, the corresponding relationship and process conditions to be used can be determined sequentially. Finally, the corresponding relationship and process conditions can be retrieved from the database, and the operating equipment can be controlled to process the wafer and adjust the wafer warpage.

[0107] Compared to the above implementations, when adjusting wafer warpage using the wafer warpage adjustment method provided in this disclosure, the warpage of each wafer can be acquired. Then, based on the acquired warpage, different correspondences or different process conditions are determined for different wafers, thereby enabling targeted and effective adjustment of the warpage of each wafer. This wafer warpage adjustment method can cover warpage differences between different batches of wafers, and even differences between different wafers within the same batch. Furthermore, when changes in certain processes cause changes in wafer warpage, it avoids the need to re-evaluate and adjust the wafer warpage adjustment method due to process changes.

[0108] Furthermore, the wafer warpage adjustment method provided in this disclosure can be applied to the entire wafer fabrication process. When it is necessary to adjust the wafer warpage, the required process conditions can be retrieved from the database without manually calculating the method required to adjust the wafer warpage. This can greatly reduce the manpower required to adjust the wafer warpage and simplify the wafer fabrication process.

[0109] In some embodiments, a coordinate system is established during the wafer fabrication process to clearly define the location and positional relationships of the different structures included in the wafer, thereby reducing the difficulty of wafer fabrication. This coordinate system includes a first direction X, a second direction Y, and a third direction Z, and any two of the first direction X, second direction Y, and third direction Z are perpendicular to each other. The plane defined by the first direction X and the second direction Y is parallel to the plane containing the wafer.

[0110] It is understandable that wafer warpage includes first warpage, second warpage, and third warpage.

[0111] In some examples, such as Figure 4 As shown, in the above S200, the warpage of the wafer to be adjusted is obtained, including S210 to S230.

[0112] S210, obtain the warpage of the wafer in the first direction X, and obtain the first warpage.

[0113] For example, a warpage measuring instrument can be used to measure the distance between multiple points and the lowest point of the wafer in the first direction X to determine the warpage of the wafer in the first direction X, thus obtaining the first warpage.

[0114] S220, obtain the warpage of the wafer in the second direction Y, and obtain the second warpage.

[0115] For example, the warpage of the wafer in the second direction Y can be determined by measuring the distance between multiple points and the lowest point of the wafer using a warpage measuring instrument, thus obtaining the second warpage.

[0116] For example, the first warpage and the second warpage can be the same or different. The relationship between the first warpage and the second warpage is related to the overall stress distribution of the wafer.

[0117] Understandably, the warpage of a wafer is related to both the first and second warpage.

[0118] For example, the first warp and the second warp are matched so that different parts of the wafer warp in the same direction. In this case, the edges of the wafer bend towards their back side, the middle bulges, or... Figure 1 As shown, the edges of the wafer curve toward its front side and are concave in the middle, giving the wafer an overall bowl-like or dish-like shape.

[0119] For example, a mismatch between the first and second warpage causes different parts of the wafer to warp in different directions, and the degree of warpage can vary in these different directions. In this case, the wafer as a whole will have a saddle shape (e.g., as shown in the image). Figure 2 As shown, the wafer is bent toward its front side in the first direction X and toward its back side in the second direction Y.

[0120] S230, based on the difference between the first and second warp, the third warp is obtained.

[0121] For example, after obtaining the first warp and the second warp, the difference between the two can be taken (i.e., the first warp minus the second warp) to obtain the third warp.

[0122] For example, if the first warp is 30 μm and the second warp is 10 μm, then the third warp is 20 μm; or, if the first warp is 30 μm and the second warp is -10 μm, then the third warp is 40 μm; or, if the first warp is -10 μm and the second warp is -10 μm, then the third warp is 0 μm.

[0123] For example, the third warp can characterize the degree of wafer distortion. The smaller the absolute value of the third warp, the less distorted the wafer; the larger the absolute value of the third warp, the more distorted the wafer.

[0124] For example, the smaller the absolute value of the third warp, the smaller the difference between the first and second warp, and the smaller the difference in the distribution of the overall stress of the wafer in the first direction X and the second direction Y. In this way, the difference in the degree of warp of the wafer in the first direction X and the second direction Y is small, or the degree of warp tends to be consistent, thus making the overall warp state of the wafer more uniform.

[0125] Optionally, if the first warpage is 20 μm and the second warpage is 19 μm, then the third warpage is 1 μm. In this case, the wafer as a whole is bowl-shaped or disc-shaped, and the difference in the degree of warpage of the wafer in the first direction X and the second direction Y is very small.

[0126] For example, the larger the absolute value of the third warp, the greater the difference between the first and second warp, and the greater the difference in the distribution of the overall stress of the wafer in the first direction X and the second direction Y. This results in a greater difference in the degree of warp of the wafer in the first direction X and the second direction Y, and thus makes the overall warp state of the wafer more complex.

[0127] Optionally, if the first warpage is 20 μm and the second warpage is -19 μm, then the third warpage is 39 μm. In this case, the wafer as a whole is saddle-shaped, and the difference in the degree of warpage between the first direction X and the second direction Y is significant.

[0128] In some embodiments, after obtaining different warpages of the wafer, the different warpage variations of the wafer can be determined based on the target warpage corresponding to the different warpages. The warpage variations of the wafer include a first warpage variation, a second warpage variation, and a third warpage variation.

[0129] In some examples, such as Figure 5 As shown, in the above S300, the amount of warpage change of the wafer is determined based on the obtained warpage and the corresponding target warpage, including: S310 to S330.

[0130] S310, based on the first warp degree and the target warp degree corresponding to the first warp degree, the change in the first warp degree is obtained.

[0131] For example, the first change in warp is the difference between the target warp corresponding to the first warp and the first warp. After determining the first warp and the target warp corresponding to the first warp, the difference between the two can be taken (that is, the target warp corresponding to the first warp minus the first warp) to obtain the first change in warp.

[0132] For example, if the first warp is 20 μm and the target warp corresponding to the first warp is 0 μm, then the change in the first warp is -20 μm.

[0133] S320, based on the aforementioned second warp degree and the target warp degree corresponding to the second warp degree, the change in the second warp degree is obtained.

[0134] For example, the second warp change is the difference between the target warp corresponding to the second warp and the second warp. After determining the second warp and the target warp corresponding to the second warp, the difference between the two can be taken (that is, the target warp corresponding to the second warp minus the second warp) to obtain the second warp change.

[0135] For example, if the second warp is 20 μm and the target warp corresponding to the second warp is 1 μm, then the change in the second warp is -19 μm.

[0136] S330, based on the aforementioned third warp degree and the target warp degree corresponding to the third warp degree, the change in the third warp degree is obtained.

[0137] For example, the third warp change is the difference between the target warp corresponding to the third warp and the third warp. After determining the third warp and the target warp corresponding to the third warp, the difference between the two can be taken (that is, the third warp minus the target warp corresponding to the third warp) to obtain the third warp change.

[0138] For example, if the third warp is 20 μm and the target warp corresponding to this third warp is -1 μm, then the change in the third warp is -21 μm.

[0139] For example, among the target warp corresponding to the first warp, the target warp corresponding to the second warp, and the target warp corresponding to the third warp, at least two may be the same, or at least two may be different. The magnitude relationship between the target warp corresponding to the first warp, the target warp corresponding to the second warp, and the target warp corresponding to the third warp can be determined according to subsequent semiconductor manufacturing processes, and this disclosure does not limit this.

[0140] In some embodiments, the database includes at least two adjustment methods, and the number of corresponding relationships is multiple. At least two corresponding relationships are based on the same adjustment method.

[0141] In some examples, such as Figure 6As shown, in the above S400, the corresponding relationship to be used to adjust the warpage of the wafer is determined based on the determined warpage change amount, including: S410 to S430.

[0142] S410, determine the adjustment method based on the determined change in warpage.

[0143] For example, the determined change in warp may refer to at least one of a first change in warp, a second change in warp, and a third change in warp.

[0144] For example, the adjustment method can refer to a certain semiconductor manufacturing process. This semiconductor manufacturing process could be a deposition process, an ion implantation process, or an annealing process, etc.

[0145] It should be noted that different semiconductor manufacturing processes can have varying degrees of impact on the warpage of wafers in different directions. Therefore, different semiconductor manufacturing processes can be used to adjust the warpage of wafers in different directions.

[0146] Of course, when adjusting the warpage of a wafer in the same direction, the semiconductor manufacturing process that can be used is not unique, and this disclosure does not limit it.

[0147] For example, after determining the amount of warpage change of the wafer, that is, after determining the type of warpage change of the wafer, the corresponding adjustment method can be determined according to the type of warpage change of the wafer. This adjustment method can effectively adjust the warpage of the wafer in a certain direction (e.g., the first direction X and / or the second direction Y).

[0148] For example, the above-mentioned at least two adjustment methods may include a first adjustment method and a second adjustment method. The first adjustment method is used to adjust the third warp, and the second adjustment method is used to adjust the first warp and the second warp.

[0149] In other words, the first adjustment method can affect or primarily affect the warpage of the wafer in the first direction X or the second direction Y. After processing the wafer using the first adjustment method, the stress distribution of the wafer in the first direction X or the second direction Y can be effectively adjusted, thereby adjusting the warpage of the wafer in the first direction X or the second direction Y.

[0150] The second adjustment method can affect or primarily affect the warpage of the wafer in the first direction X and the second direction Y. After processing the wafer using the second adjustment method, the stress distribution of the wafer in the first direction X and the second direction Y can be adjusted simultaneously, thereby simultaneously adjusting the warpage of the wafer in the first direction X and the second direction Y.

[0151] For example, the degree to which the second adjustment method affects the warpage of the wafer in the first direction X and the degree to which it affects the warpage in the second direction Y can be the same. That is, after processing the wafer using the second adjustment method, the change in the first warpage and the change in the second warpage of the wafer can be the same.

[0152] S420, determine at least one correspondence based on the above adjustment method from the above multiple correspondences.

[0153] Since the database includes multiple correspondences based on at least two adjustment methods, at least one correspondence can be based on the same adjustment method.

[0154] Taking the adjustment method as an example, and the process condition as an example, each semiconductor process can include at least one process parameter. Each process parameter has a different degree of influence on the wafer warpage. The relationship between the degree of influence of each process parameter on the wafer warpage can be called a correspondence. Therefore, each adjustment method can correspond to multiple correspondences.

[0155] For example, after determining the adjustment method, at least one correspondence corresponding to that adjustment method can be determined from the database.

[0156] S430, based on the determined amount of warpage change, determine from at least one determined correspondence the correspondence to be used to adjust the warpage of the wafer.

[0157] For example, the degree to which each process parameter (i.e., process condition) affects wafer warpage can vary, meaning that the type of stress generated after processing the wafer with each process parameter is different. For instance, processing the wafer with a certain process parameter can generate tensile or compressive stress, which can counteract or balance the stress inside the wafer.

[0158] For example, based on the acquired warpage and the amount of warpage change, the overall stress state of the wafer or the warpage state of the wafer can be determined. For instance, it can be determined whether the edge of the wafer warps towards its front side or its back side. After determining the amount of warpage change, the desired correspondence can be determined from at least one of the above correspondences based on the overall stress state or the warpage state of the wafer. The utilized correspondence can generate stress corresponding to the type of stress within the wafer, thereby offsetting or balancing the internal stress of the wafer, thus changing the warpage state of the wafer.

[0159] In some examples, in S600 above, controlling the operating equipment to process the wafer according to the determined process conditions includes: processing the wafer according to the determined process conditions using the determined adjustment method.

[0160] For example, after determining the adjustment method and process conditions, instructions can be sent to the operating equipment to control the operating equipment to perform the corresponding semiconductor process on the wafer according to the determined adjustment method and process conditions, to offset or balance the internal stress of the wafer, adjust the warpage state of the wafer, and make the wafer as a whole tend to be flat.

[0161] In some embodiments, the database includes multiple adjustment methods, with at least two adjustment methods based on the same set process step. Before S410, that is, before determining the adjustment method based on the determined warpage change, the method for adjusting wafer warpage further includes: determining the process step in which the wafer is located; and determining at least two corresponding adjustment methods based on the process step in which the wafer is located.

[0162] In some examples, the aforementioned setup process step refers to a process step in the overall wafer fabrication process that forms a specific structure. This setup process step itself, or subsequent setup process steps, has requirements on the wafer's warpage. For example, this setup process step may include at least one semiconductor fabrication process.

[0163] For example, the above-mentioned process steps may include: forming a channel via, forming an array of common sources, or bonding different wafers, etc.

[0164] It is understandable that the aforementioned database contains multiple adjustment methods based on various process steps. For the same process step, at least two adjustment methods can be used to adjust the wafer warpage. These at least two adjustment methods can adjust different types of wafer warpage.

[0165] In some embodiments, since the first warp, second warp and third warp of the wafer each correspond to a target warp, after determining the first warp change, the second warp change and the third warp change, the first warp change, the second warp change and the third warp change can be judged first to determine the type of warp that the wafer needs to be adjusted.

[0166] Based on this, such as Figure 7 As shown, in the above S410, the adjustment method is determined according to the determined amount of warpage change, including: S411 to S412c.

[0167] S411, judge the changes in the first warp, the second warp and the third warp respectively, and confirm whether the corresponding warp needs to be adjusted.

[0168] For example, when judging the changes in the first, second, and third warp, each of them can be compared with 0 μm. If a certain warp change is 0 μm or close to 0 μm, it indicates that the warp of that type has reached or is close to its corresponding target warp. In this case, no adjustment is needed for that type of warp. Otherwise, the warp of that type needs to be adjusted.

[0169] S412a, if it is necessary to adjust the first warp, the second warp, and the third warp, then it is determined that the warp of the wafer should be adjusted using the first adjustment method and the second adjustment method.

[0170] For example, if the first warp is far from its corresponding target warp, the second warp is far from its corresponding target warp, and the third warp is far from its corresponding target warp, then the first warp, the second warp, and the third warp all need to be adjusted.

[0171] At this point, the warpage of the wafer can be adjusted simultaneously using both the first and second adjustment methods.

[0172] S412b If it is not necessary to adjust at least one of the first warp and the second warp, but it is necessary to adjust the third warp, then it is determined that the first adjustment method should be used to adjust the warp of the wafer.

[0173] For example, not needing to adjust at least one of the first warp and the second warp may include: not needing to adjust the first warp, not needing to adjust the second warp, or not needing to adjust the first warp and the second warp.

[0174] For example, it is not necessary to adjust the first warp, only the second and third warp. This means that the wafer has a larger warp in the second direction Y.

[0175] Optionally, the first adjustment method can primarily adjust the warpage of the wafer in the second direction Y. By processing the wafer using the first adjustment method, the warpage of the wafer in the second direction Y can be changed, thereby making the wafer as a whole tend to be flat.

[0176] For example, it is not necessary to adjust the second warp, only the first and third warp. This means that the wafer has a larger warp in the first direction X.

[0177] Optionally, the first adjustment method can primarily adjust the warpage of the wafer in the first direction X. By processing the wafer using the first adjustment method, the warpage of the wafer in the first direction X can be changed, thereby making the wafer as a whole tend to be flat.

[0178] For example, it is not necessary to adjust the first and second warp, only the third warp needs to be adjusted. This means that the difference between the warp in the first direction X and the warp in the second direction Y of the wafer is large, and the degree of wafer distortion is large.

[0179] Optionally, the first adjustment method can primarily adjust the warpage of the wafer in the first direction X or the second direction Y. Processing the wafer using the first adjustment method can change the warpage of the wafer in the first direction X, reducing the difference between the warpage of the wafer in the first direction X and the warpage in the second direction Y; or, it can change the warpage of the wafer in the second direction Y, reducing the difference between the warpage of the wafer in the first direction X and the warpage in the second direction Y.

[0180] S412c, if it is necessary to adjust the first warp and the second warp, but not the third warp, then it is determined that the second adjustment method should be used to adjust the warp of the wafer.

[0181] For example, the first warp is far from its corresponding target warp, the second warp is far from its corresponding target warp, but the third warp is far from its corresponding target warp. In this case, only the first warp and the second warp can be adjusted.

[0182] At this point, the warpage of the wafer can be adjusted using only the second adjustment method.

[0183] It should be noted that as the number of stacked layers and the structure of 3D NAND become increasingly numerous and intricate, the wafer fabrication process increasingly requires simultaneous consideration of the first, second, and third warpage of the wafer. The methods for adjusting wafer warpage used in the aforementioned implementations typically only adjust the first and second warpages, or only the third warpage. This is insufficient to meet the growing demands of wafer fabrication and can easily reduce wafer production yield.

[0184] The method for adjusting wafer warpage provided in this disclosure establishes multiple adjustment methods in a database (among these methods, at least one can adjust the first and second warpage of the wafer, and at least one can adjust the third warpage of the wafer). Before processing the wafer to adjust its warpage, the warpage in different directions is first determined to confirm whether the first, second, and third warpages all meet the requirements. If none of the three meet the requirements, two different adjustment methods can be used to adjust the wafer warpage. In other words, the above-mentioned method for adjusting wafer warpage simultaneously covers the adjustment methods for the first, second, and third warpages of the wafer. This allows the first, second, and third warpages of the wafer to be controlled within specifications, achieving comprehensive control over the wafer warpage without the need for other methods. This not only simplifies the wafer fabrication process but also helps meet the increasing demands during wafer fabrication, improving wafer production yield.

[0185] It is understood that in S412a above, when adjusting the wafer warpage using the first adjustment method and the second adjustment method, the first adjustment method can be executed first, followed by the second adjustment method; or, the second adjustment method can be executed first, followed by the first adjustment method. This disclosure does not limit the execution order of the first adjustment method and the second adjustment method.

[0186] In some examples, the first adjustment method is executed first, followed by the second adjustment method. For example... Figure 8 As shown, the warpage of the wafer is adjusted using the first adjustment method and the second adjustment method, including: S4121a~S4123a.

[0187] S4121a, according to the first adjustment method and corresponding process conditions, control the corresponding operating equipment to perform the first processing on the wafer in order to adjust the third warpage.

[0188] Here, we take the first adjustment method as an example, which can mainly adjust the warpage of the wafer in the second direction Y.

[0189] For example, after the first processing of the wafer, the warpage of the wafer in the second direction Y will change as expected, and the amount of change can be the same as the third warpage. At this time, the first warpage and the second warpage after the first adjustment can be the same or close to the same.

[0190] For example, the first warpage of the wafer is 20 μm, the second warpage of the wafer is 30 μm, and the third warpage of the wafer is -10 μm, with the target warpage corresponding to all three being 0 μm.

[0191] Optionally, the third warpage change can be -10 μm. Based on the first adjustment method and corresponding process conditions, the warpage of the wafer in the second direction Y can be changed by -10 μm. After the first processing of the wafer, the first warpage is 20 μm, the second warpage is 20 μm, and the third warpage is 0 μm.

[0192] S4122a, obtain the first warp and the second warp of the wafer after the first adjustment, and determine the change in the first warp and the change in the second warp.

[0193] For example, after the first adjustment, the warpage of the wafer in the second direction Y changes. Of course, since the first adjustment method mainly adjusts the warpage of the wafer in the second direction Y, the warpage of the wafer in the first direction X can also change, although the change is more subtle.

[0194] After the wafer undergoes its first processing, the warpage of the wafer in the first direction X and the second direction Y can be detected to determine the actual values ​​of the first warpage and the second warpage. Then, the change in the first warpage and the change in the second warpage can be determined based on the target warpage corresponding to the first warpage and the target warpage corresponding to the second warpage.

[0195] For example, after the first adjustment, the first warpage of the wafer is 20 μm, the second warpage is 20 μm, and the third warpage is 0 μm. Correspondingly, the change in the first warpage is -20 μm, and the change in the second warpage is -20 μm.

[0196] S4123a: Based on the second adjustment method, the corresponding process conditions, and the first and second warpage changes, control the corresponding operating equipment to perform a second processing on the wafer to adjust the first and second warpages.

[0197] After determining the first and second warpage changes, the corresponding process conditions can be determined based on the alignment relationship in the second adjustment method. After performing a second processing on the wafer using these corresponding process conditions, the warpage of the wafer in the first direction X and the second direction Y undergoes the expected changes.

[0198] For example, the first warpage change is -20 μm, and the second warpage change is -20 μm. After the second adjustment, the first warpage is 0 μm, the second warpage is 0 μm, and the third warpage is 0 μm.

[0199] The following example illustrates the method for adjusting wafer warpage provided in this disclosure, using the process step of forming an array of common sources as an example.

[0200] Figure 11This is a partial top view of the wafer, illustrating multiple gate line slots (GLS). These GLS extend along a first direction X and are spaced apart sequentially along a second direction Y. Additionally, the figure shows two memory block regions B, separated by the GLS. Of course, the arrangement of the GLS is not limited to this.

[0201] Figure 12 for Figure 11 The image shows a cross-sectional view of the wafer along the CC' direction. As can be seen from the image, the gate line gap CLS also extends along the third direction Z, penetrating the stacked structure.

[0202] In some embodiments, the first adjustment method described above may be: forming ion-doped polysilicon in the gate line gaps (GLS) of the wafer. The second adjustment method described above may be: forming a stress-regulating layer on the back side of the wafer.

[0203] In some examples, the formation of ion-doped polysilicon in the gate gap (GLS) of a wafer can be achieved by: forming ion-doped polysilicon in the GLS of the wafer; or by forming polysilicon in the GLS of the wafer and then performing ion implantation on the polysilicon.

[0204] For example, since the gate line gaps (GLS) mainly extend along the first direction X and are sequentially spaced along the second direction Y, forming ion-doped polysilicon in the gate line gaps (GLS) can primarily adjust the stress of the wafer in the second direction Y, and thus primarily adjust the warpage of the wafer in the second direction Y. In this way, by adjusting the warpage of the wafer in the second direction Y, the third warpage can be adjusted.

[0205] Optionally, the process conditions based on the correspondence of the first adjustment method mentioned above include: the type of dopant ions and the doping concentration.

[0206] Understandably, different types of dopant ions have varying degrees of impact on wafer warpage. Wafer warpage is also more sensitive to different dopant ions.

[0207] For example, dopant ions can include phosphorus ions, arsenic ions, boron ions, or gallium ions. Phosphorus and arsenic ions are N-type ions; implanting N-type ions into polycrystalline silicon can generate compressive stress. Boron and gallium ions are P-type ions; implanting P-type ions into polycrystalline silicon can generate tensile stress.

[0208] After obtaining the second and third warpage values ​​of the wafer, the stress distribution of the wafer can be determined based on these values, identifying whether the stress on the front side of the wafer is compressive or tensile. Once the stress distribution on the front side of the wafer is determined, an ion implantation process can be used to implant the corresponding type of ions into the polysilicon within the gate gap (GLS) to generate the corresponding type of stress in the polysilicon, thus offsetting or balancing the stress on the front side of the wafer and reducing the degree of wafer warpage.

[0209] For example, there are multiple correspondences based on the first adjustment method described above. Each correspondence represents the correspondence between the third warp change and the dopant concentration based on the set type of dopant ion. The types of dopant ions on which different correspondences are based are different.

[0210] It is understandable that as the concentration of dopant ions changes, the magnitude of the stress they generate in polycrystalline silicon will change, which in turn will lead to changes in the second and third warpage of the wafer.

[0211] The warpage of a wafer varies in sensitivity to different types of dopant ions. That is, with the same doping concentration, different types of ions will result in different changes in the second and third warpage of the wafer. This allows for the establishment of different correspondences based on the type of dopant ion.

[0212] It should be noted that when forming ion-doped polysilicon in the gate gap (GLS), the type of dopant ions can be determined according to actual process requirements. Correspondingly, when adjusting the third warpage of the wafer using the first adjustment method, the corresponding relationship between the required dopant ion types can be retrieved based on the first adjustment method and actual process requirements. Then, based on the determined change in third warpage, the corresponding doping concentration can be obtained from this relationship.

[0213] For example, based on the correspondence of the first adjustment method described above, the following correspondence exists: the dopant ion is a phosphorus ion. For instance... Figure 13 As shown, the change in the third warpage of the wafer is positively correlated with the concentration of dopant ions. That is, the higher the doping concentration of phosphorus ions, the greater the change in the third warpage. In the figure, the vertical axis Y1 represents the change in the third warpage in μm; the horizontal axis X1 represents the concentration of dopant ions.

[0214] For example, the process of adjusting the third warpage of a wafer can be as follows: After obtaining the third warpage of the wafer and determining the amount of change in the third warpage, based on the first adjustment method and actual process requirements, phosphorus ions are used to dope the polysilicon in the gate gap (GLS). At this time, the corresponding relationship can be retrieved from the database (that is, the relationship between the amount of change in the third warpage of the wafer and the doping concentration of phosphorus ions); then, according to the determined amount of change in the third warpage (that is, the value of Y1 mentioned above), the corresponding phosphorus ion doping concentration (that is, the process conditions and the value of X1 mentioned above) is found in the corresponding relationship; after that, the operating equipment can be controlled to inject phosphorus ions of the corresponding doping concentration into the polysilicon in the gate gap (GLS).

[0215] In other examples, the stress-adjusting layer can be formed on the back side of the wafer by using a deposition process to form the stress-adjusting layer on one side of the substrate-based stacked structure of the wafer.

[0216] For example, the stress-adjusting layer is a monolithic structure with an overall planar shape. Therefore, forming a stress-adjusting layer on the back side of the wafer can adjust the warpage of the wafer in the first direction X and the warpage of the wafer in the second direction Y.

[0217] Optionally, the process conditions based on the correspondence of the second adjustment method mentioned above include: the material and thickness of the stress-adjusting layer.

[0218] It is understandable that stress-adjusting layers of different thicknesses have varying degrees of impact on wafer warpage.

[0219] For example, the material of the stress-regulating layer can include silicon nitride or silicon oxide. When the material of the stress-regulating layer is the same, stress-regulating layers of different thicknesses can generate tensile or compressive stress; that is, the type of stress generated by the stress-regulating layer itself can be determined according to the thickness of the stress-regulating layer.

[0220] After obtaining the first and second warpage of the wafer, the stress distribution of the wafer can be determined based on the first and second warpages, identifying whether the stress on the front side of the wafer is compressive or tensile. Once the stress distribution on the front side of the wafer is determined, a deposition process can be used to deposit a stress-regulating layer with corresponding stress on the back side of the wafer, offsetting or balancing the stress on the front side and reducing the degree of wafer warpage.

[0221] For example, there are multiple correspondences based on the second adjustment method described above. Each correspondence represents the relationship between the first warpage change and the second warpage change, based on the material of the set stress-adjusting layer, and the thickness of the stress-adjusting layer. The different correspondences are based on different materials of the stress-adjusting layer.

[0222] It is understandable that as the thickness of the stress-adjusting layer changes, the magnitude of the stress it generates will change, and even the type of stress it generates will change, which in turn will lead to changes in the first and second warpage of the wafer.

[0223] The warpage of a wafer varies in sensitivity to stress-adjusting layers made of different materials. That is, with different stress-adjusting layer materials, the rate of change in wafer warpage can differ depending on the thickness of each stress-adjusting layer. This allows for the establishment of different correlations based on the material of the stress-adjusting layer.

[0224] It should be noted that the material of the stress-adjusting layer formed on the back side of the wafer can be determined according to the actual process requirements. Accordingly, when adjusting the first and second warpage of the wafer using the second adjustment method, the corresponding relationship of the required material stress-adjusting layer can be retrieved based on the second adjustment method and the actual process requirements. Then, based on the determined changes in the first and second warpage, the thickness of the corresponding stress-adjusting layer can be obtained from this relationship.

[0225] For example, based on the correspondence of the second adjustment method described above, the correspondence includes the following: the material of the stress-adjusting layer is silicon nitride. For instance... Figure 14 As shown, the change in the first warpage of the wafer is negatively correlated with the thickness of the stress-adjusting layer; the change in the second warpage is also negatively correlated with the thickness of the stress-adjusting layer. That is, the greater the thickness of the stress-adjusting layer, the smaller the change in either the first or second warpage. In the figure, the vertical axis Y2 represents the change in either the first or second warpage, in μm; the horizontal axis X2 represents the thickness of the stress-adjusting layer, in μm.

[0226] Since the stress-adjusting layer can simultaneously affect the warpage of the wafer in the first direction X and the second direction Y, and the degree of influence is the same or nearly the same, when adjusting the warpage of the wafer in the first direction X and the second direction Y, adjustments can be made based on the change in the first warpage or the change in the second warpage.

[0227] For example, the process of adjusting the first and second warpage of a wafer can be as follows: After obtaining the first and second warpage of the wafer and determining the amount of change in the first and second warpages, based on the second adjustment method and actual process requirements, silicon nitride is used as the material for the stress adjustment layer. At this time, the corresponding relationship can be retrieved from the database (that is, the relationship between the amount of change in the first and second warpages of the wafer and the thickness of the stress adjustment layer); then, according to the determined amount of change in the first or second warpage (that is, the value of Y2 mentioned above), the corresponding thickness of the stress adjustment layer (that is, the process conditions and the value of X2 mentioned above) can be found in the corresponding relationship; after that, the operating equipment can be controlled to deposit silicon nitride on the back side of the wafer to form a stress adjustment layer with a corresponding thickness.

[0228] It should be noted that the first and second adjustment methods mentioned above pertain to the wafer fabrication process.

[0229] In the above-described implementations, additional processes (such as forming a back wafer on the back side of the wafer and then performing ion implantation on the back side) are typically used to adjust the wafer warpage. This tends to increase the overall wafer fabrication process and thus the cost of wafer fabrication.

[0230] This disclosure utilizes existing processes in the wafer fabrication process to adjust the wafer warpage, avoiding the need for additional processes, simplifying the overall wafer fabrication process, and reducing wafer fabrication costs.

[0231] In addition, in the step of preparing the array common source electrode, this disclosure adopts a first adjustment method and a second adjustment method, which can adjust the third warpage of the wafer, as well as the first warpage and the second warpage of the wafer, so that the different warpages of the wafer can be within specifications. This is beneficial to achieve comprehensive control of the wafer warpage and facilitates the improvement of the accuracy and yield of subsequent semiconductor manufacturing processes.

[0232] In some embodiments, such as Figure 9 As shown, after S600 above, that is, after processing the wafer according to the determined process conditions, the method for adjusting the wafer warpage also includes: S700 to S900.

[0233] S700, obtains the warpage of the wafer after adjustment.

[0234] For example, the process of obtaining the warpage of the wafer after adjustment can be referred to the description in S200 and S210 to S230 above, and will not be repeated here.

[0235] For example, the obtained wafer warp after adjustment may include: a first warp after adjustment, a second warp after adjustment, and a third warp after adjustment.

[0236] S800, based on the warp obtained before adjustment and the warp obtained after adjustment, determine the actual change in the warp of the wafer.

[0237] For example, the actual change in wafer warpage can be the difference between the adjusted warpage and the original warpage.

[0238] For example, the actual change in the first warpage of the wafer is the difference between the adjusted first warpage and the original first warpage. The actual change in the second warpage of the wafer is the difference between the adjusted second warpage and the original second warpage. The actual change in the third warpage of the wafer is the difference between the adjusted third warpage and the original third warpage.

[0239] S900 feeds back the actual change in the aforementioned warpage to the database.

[0240] For example, after obtaining the actual change in the warpage of the wafer, the actual change in warpage can be fed back to the database in real time, or the actual change in warpage can be collected for a period of time and then fed back to the database.

[0241] After feeding the actual change in warp back to the database, the actual change in warp can be compared with the expected change in warp (that is, the change in warp determined based on the warp obtained before adjustment and the target warp) to confirm the accuracy of the correspondences in the current database.

[0242] For example, when the process step is set to form an array common source electrode and the first adjustment method is to form ion-doped polysilicon in the gate gap (GLS) of the wafer, the variance of the actual change in the third warp is small. That is, the deviation between the actual change in the third warp of each wafer and the average of the actual changes in the third warp of multiple wafers is small, and the actual change in the third warp of each wafer is basically consistent with the expected change in the third warp. By using the first adjustment method, the third warp of the wafer can be adjusted more accurately.

[0243] For example, when the process step is set to form an array common source electrode and the second adjustment method is to form a stress adjustment layer on the back side of the wafer, the variance of the actual change in the first warp or the actual change in the second warp is small. That is, the deviation between the actual change in the first warp (or the actual change in the second warp) of each wafer and the average value of the actual change in the first warp (or the actual change in the second warp) of multiple wafers is small, and the actual change in the first warp (or the actual change in the second warp) of each wafer is basically consistent with the expected change in the first warp (or the second warp). By using the second adjustment method, the first warp and the second warp of the wafer can be adjusted more accurately.

[0244] In some embodiments, after S900, the method for adjusting wafer warpage further includes updating the correspondence used to adjust wafer warpage based on the actual change in warpage fed back to the database.

[0245] For example, updating the correspondence used to adjust the warpage of a wafer by utilizing the actual change in warpage can further improve the accuracy of the correspondence used to adjust the warpage of the wafer.

[0246] In some embodiments, the method for adjusting wafer warpage before providing the database in S100 above further includes: establishing the database.

[0247] In some examples, such as Figure 10 As shown, a database is established, including: S110a~S160a.

[0248] S110a, for each correspondence, provides multiple sample wafers, which are in the same process step.

[0249] For example, the process steps of the multiple sample wafers can be steps to form channel holes, steps to form array common source electrodes, or steps to bond different wafers, etc.

[0250] S120a, obtain the warpage of each sample wafer.

[0251] For example, the process of obtaining the warpage of the sample wafer can be referred to the description in S200 and S210 to S230 above, and will not be repeated here.

[0252] For example, the warpage of each sample wafer may include a first warpage, a second warpage, and a third warpage. The warpage of different sample wafers may be the same or different.

[0253] S130a uses different process conditions to process the sample wafers to adjust the warpage of the sample wafers.

[0254] For example, the different process conditions mentioned above may include: dopant ion type and dopant concentration, or the material and thickness of the stress conditioning layer.

[0255] For example, the process of processing sample wafers using different process conditions may include: dividing the sample wafers according to different process conditions, with each process condition corresponding to multiple sample wafers; and processing the sample wafers using different parameter values ​​under each process condition.

[0256] For example, different process conditions include using phosphorus ions as dopants and silicon nitride as the stress-modifying layer material. The sample wafers are divided into two batches according to these two process conditions, with each batch containing multiple sample wafers. For one batch of sample wafers, multiple sample wafers are processed with different doping concentrations to give them different warpage variations. For the other batch of sample wafers, silicon nitride films (i.e., stress-modifying layers) of different thicknesses are deposited on the back side of each sample wafer to give them different warpage variations.

[0257] S140a, obtain the warpage of the above sample wafer after adjustment.

[0258] For example, the process of obtaining the warpage of the sample wafer after adjustment can be referred to the description in S200 and S210 to S230 above, and will not be repeated here.

[0259] For example, the adjusted warpage of each sample wafer may include: an adjusted first warpage, an adjusted second warpage, and an adjusted third warpage.

[0260] S150a, based on the warp obtained before adjustment and the warp obtained after adjustment, determine the actual change in warp of the sample wafer.

[0261] For example, the process of obtaining the actual change in warpage of the sample wafer can be referred to the description in S300 and S310 to S330 above, and will not be repeated here.

[0262] S160a: Based on the actual change in warpage and the corresponding process conditions of the sample wafer, establish the correspondence between the change in wafer warpage and the process conditions.

[0263] For example, in S130 above, for a batch of sample wafers doped with phosphorus ions, the stress generated by different doping concentrations is different, and the degree of influence on different sample wafers is different. In this way, the correspondence between the warpage change and the doping concentration can be established according to the doping concentration and the actual warpage change of each sample wafer.

[0264] For example, in S130 above, for a batch of sample wafers with a stress-adjusting layer formed by silicon nitride, the stress generated by silicon nitride films of different thicknesses is different, and the degree of influence on different sample wafers is different. In this way, the correspondence between the warpage change and the silicon nitride film thickness can be established based on the actual change in warpage of the silicon nitride film thickness and its warpage for each sample wafer.

[0265] Some embodiments of this disclosure also provide an apparatus 100 for adjusting wafer warpage. For example... Figure 15 As shown, the device 100 for adjusting wafer warpage includes: a memory 1, a receiver 2, a processor 3, and a transmitter 4.

[0266] In some examples, the aforementioned memory 1 stores a database. This database includes at least one mapping relationship between the amount of wafer warpage variation and process conditions.

[0267] In some examples, the receiver 2 described above is configured to receive the warpage of the wafer to be adjusted from the detection device.

[0268] For example, the receiver 2 and the memory 1 can be coupled together. After the detection device detects the warpage of the wafer to be adjusted and obtains the detection result, the detection result can be transmitted to the receiver 2.

[0269] In some examples, the processor 3 is configured to: determine the amount of warpage change of the wafer based on the wafer warpage received by the receiver 2 and the corresponding target warpage; determine the correspondence to be used to adjust the wafer warpage based on the determined amount of warpage change; and determine the process conditions corresponding to the amount of warpage change of the wafer based on the determined correspondence.

[0270] For example, the processor 3 and memory 1 can be coupled together, and the processor 3 and receiver 2 can be coupled together. After determining the amount of warpage change of the wafer based on the wafer warpage and the corresponding target warpage, the processor 3 can retrieve the corresponding relationship to be used from the database stored in memory 1, and retrieve the process conditions to be used from the corresponding relationship.

[0271] In some examples, the transmitter 4 is configured to send the process conditions determined by the processor 3 to the operating device so that the operating device processes the wafer according to the determined process conditions.

[0272] For example, the processor 3 and the transmitter 4 can be coupled together, and the processor 3 can be coupled to the operating device. After the transmitter 4 sends the determined process conditions to the operating device, the processor 3 can send instructions (i.e., the determined process conditions) to the operating device to control the operating device to process the wafer according to the instructions.

[0273] The beneficial effects that the wafer warpage adjustment apparatus 100 provided in some embodiments of this disclosure can achieve are the same as the beneficial effects that the wafer warpage adjustment method provided in some embodiments above can achieve, and will not be repeated here.

[0274] In some embodiments, the receiver 2 is further configured to receive the adjusted warpage of the wafer from the detection device. The processor 3 is further configured to determine the actual change in wafer warpage based on the warpage obtained before adjustment and the warpage obtained after adjustment; and to feed back the actual change in warpage to the database.

[0275] For example, after adjusting the warpage of the wafer, the inspection device can detect the warpage of the wafer after adjustment, and after obtaining the detection result, it can transmit the detection result to the receiver 2. The processor 3 can calculate the warpage obtained before adjustment and the warpage obtained after adjustment to obtain the actual change in the wafer warpage. Then, the processor 3 can feed back the actual change in the wafer warpage to the database stored in the memory 1.

[0276] Some embodiments of this disclosure also provide an Advanced Process Control (APC) system 1000. For example... Figure 16 and Figure 17 As shown, the APC system 1000 may include: a device 100 for adjusting wafer warpage as described in any of the above embodiments, a testing device 200, and an operating device 300.

[0277] In some examples, the aforementioned detection device 200 is configured to detect the warpage of a wafer and transmit the detected wafer warpage to a device 100 for adjusting wafer warpage.

[0278] For example, the inspection device 200 may include a warpage measuring instrument or a prefabricated measuring template. The inspection device 200 may be coupled to a receiver 2 in a wafer warpage adjustment device 100, and the wafer warpage detected by the inspection device 200 may be transmitted to the wafer warpage adjustment device 100 via the receiver 2.

[0279] In some examples, the aforementioned operating device 300 is configured to process the wafer and adjust its warpage according to process conditions from the wafer warpage adjustment device 100.

[0280] For example, the type of the operating device 300 described above corresponds to the semiconductor manufacturing process corresponding to the process conditions.

[0281] For example, the aforementioned process conditions include the type and concentration of dopant ions. The semiconductor manufacturing process corresponding to these process conditions can be an ion implantation process. In this case, the aforementioned operating device 300 can be an ion implantation device. This ion implantation device can process the wafer according to the set type and concentration of dopant ions, based on instructions (i.e., process conditions) from the wafer warp adjustment device 100.

[0282] For example, the aforementioned process conditions include the material and thickness of the stress-adjusting layer. The semiconductor manufacturing process corresponding to these process conditions can be a deposition process. In this case, the aforementioned operating equipment 300 can be a deposition equipment. This deposition equipment can deposit a stress-adjusting layer on the back side of the wafer according to the set material and thickness, based on the instructions (i.e., process conditions) from the wafer warp adjustment device 100.

[0283] For example, the number of the above-mentioned operating devices 300 is one or more, specifically related to the warpage of the wafer.

[0284] For example, the first and second warpages of the wafer need to be adjusted, but the third warpage does not. In this case, the number of the aforementioned operating devices 300 can be one, which can perform process conditions that only adjust the first and second warpages.

[0285] For example, the third warpage of the wafer needs to be adjusted, while the first and second warpages do not. In this case, the number of the aforementioned operating devices 300 can be one, which can execute the process conditions that only adjust the third warpage.

[0286] For example, the first, second, and third warpages of a wafer all need to be adjusted. In this case, there can be two operating devices 300, one of which can perform the process conditions that only adjust the first and second warpages, and the other of which can perform the process conditions that only adjust the third warpage.

[0287] The beneficial effects that the APC system 1000 provided in some embodiments of this disclosure can achieve are the same as the beneficial effects that the wafer warpage adjustment method provided in some of the above embodiments can achieve, and will not be repeated here.

[0288] Some embodiments of this disclosure also provide a computer-readable storage medium (e.g., a non-transitory computer-readable storage medium). This computer-readable storage medium stores computer program instructions that, when executed on a computer, cause the computer to perform a method for adjusting wafer warpage as described in any of the foregoing embodiments.

[0289] For example, the aforementioned computer-readable storage media may include, but are not limited to: magnetic storage devices (e.g., hard disks, floppy disks, or magnetic tapes), optical discs (e.g., CDs (Compact Disks), DVDs (Digital Versatile Disks), etc.), smart cards, and flash memory devices (e.g., EPROMs (Erasable Programmable Read-Only Memory), cards, sticks, or key drives, etc.). The various computer-readable storage media described in this disclosure may represent one or more devices for storing information and / or other machine-readable storage media. The term "machine-readable storage media" may include, but is not limited to, wireless channels and various other media capable of storing, containing, and / or carrying instructions and / or data.

[0290] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A method for adjusting wafer warpage, characterized in that, The method for adjusting wafer warpage includes: Provide a database; the database includes at least one correspondence, which is the correspondence between the warpage variation of the wafer and the process conditions; Obtain the warpage of the wafer to be adjusted; Based on the obtained warpage and the corresponding target warpage, the amount of warpage change of the wafer is determined; Based on the determined amount of warpage change, determine the corresponding relationship to be used to adjust the warpage of the wafer; Based on the established correspondence, determine the process conditions corresponding to the amount of warpage change of the wafer; The wafer is processed according to the determined process conditions to adjust the warpage of the wafer so that the warpage of the adjusted wafer meets the target warpage. The database includes at least two adjustment methods, the number of corresponding relationships is multiple, and at least two of the corresponding relationships are based on the same adjustment method; The step of determining the corresponding relationship to adjust the warpage of the wafer based on the determined warpage change includes: The adjustment method is determined based on the determined change in warpage. From the plurality of said correspondences, determine at least one correspondence based on the adjustment method; Based on the determined amount of warpage change, determine from at least one determined correspondence the correspondence to be used to adjust the warpage of the wafer.

2. The method for adjusting wafer warpage according to claim 1, characterized in that, The process of obtaining the warpage of the wafer to be adjusted includes: The warpage of the wafer in a first direction is obtained to obtain the first warpage. The warpage of the wafer in the second direction is obtained to obtain the second warpage. The third warp is obtained based on the difference between the first warp and the second warp. Wherein, the first direction and the second direction are perpendicular to each other, and the plane defined by the first direction and the second direction is parallel to the plane on which the wafer is located.

3. The method for adjusting wafer warpage according to claim 2, characterized in that, The step of determining the warpage change of the wafer based on the acquired warpage and the corresponding target warpage includes: Based on the first warp degree and the target warp degree corresponding to the first warp degree, the change in the first warp degree is obtained; The change in the second warp is obtained based on the second warp and the target warp corresponding to the second warp. The change in the third warp is obtained based on the third warp and the target warp corresponding to the third warp.

4. The method for adjusting wafer warpage according to claim 1, characterized in that, The process of processing the wafer according to the determined process conditions includes: The wafer is processed using the determined adjustment method and according to the determined process conditions.

5. The method for adjusting wafer warpage according to claim 1, characterized in that, The determined warpage change includes the first warpage change corresponding to the first warpage, the second warpage change corresponding to the second warpage, and the third warpage change corresponding to the third warpage. The at least two adjustment methods include a first adjustment method and a second adjustment method; The first adjustment method is used to adjust the third warp, and the second adjustment method is used to adjust the first warp and the second warp.

6. The method for adjusting wafer warpage according to claim 5, characterized in that, The step of determining the adjustment method based on the determined change in warp includes: The changes in the first warp, the second warp, and the third warp are judged respectively to determine whether the corresponding warp needs to be adjusted. If it is necessary to adjust the first warpage, the second warpage, and the third warpage, then it is determined that adjusting the warpage of the wafer should be done using the first adjustment method and the second adjustment method. If it is not necessary to adjust at least one of the first warp and the second warp, but it is necessary to adjust the third warp, then it is determined that the first adjustment method should be used to adjust the warp of the wafer. If it is necessary to adjust the first warpage and the second warpage, but not the third warpage, then it is determined that the second adjustment method should be used to adjust the warpage of the wafer.

7. The method for adjusting wafer warpage according to claim 6, characterized in that, Adjusting the warpage of the wafer using the first adjustment method and the second adjustment method includes: According to the first adjustment method and the corresponding process conditions, the wafer is subjected to a first processing to adjust the third warpage. The first warpage and the second warpage of the wafer after the first adjustment are obtained, and the change in the first warpage and the change in the second warpage are determined. According to the second adjustment method, the corresponding process conditions, and the first warpage change and the second warpage change, the wafer is subjected to a second processing to adjust the first warpage and the second warpage.

8. The method for adjusting wafer warpage according to claim 5, characterized in that, The first adjustment method is to form ion-doped polycrystalline silicon in the gate line gaps of the wafer; The second adjustment method involves forming a stress-regulating layer on the back side of the wafer.

9. The method for adjusting wafer warpage according to claim 8, characterized in that, The process conditions based on the correspondence of the first adjustment method include: the type of dopant ions and the doping concentration.

10. The method for adjusting wafer warpage according to claim 9, characterized in that, There are multiple correspondences based on the first adjustment method, and each correspondence represents the correspondence between the third warp change and the dopant concentration based on the set dopant ion type. Different correspondences are based on different types of doped ions.

11. The method for adjusting wafer warpage according to claim 10, characterized in that, Based on the correspondence of the first adjustment method, the following correspondences are included: The doping ion is a phosphorus ion; The change in the third warpage is positively correlated with the concentration of the doped ions.

12. The method for adjusting wafer warpage according to claim 8, characterized in that, The process conditions based on the correspondence of the second adjustment method include: the material and thickness of the stress-adjusting layer.

13. The method for adjusting wafer warpage according to claim 12, characterized in that, There are multiple correspondences based on the second adjustment method. Each correspondence represents the relationship between the first warpage change and the second warpage change, and the thickness of the stress adjustment layer, based on the material of the set stress adjustment layer. The materials of the stress-regulating layers on which different correspondences are based are different.

14. The method for adjusting wafer warpage according to claim 13, characterized in that, Based on the correspondence of the second adjustment method, the following correspondences are included: The stress-regulating layer is made of silicon nitride. The first change in warpage is negatively correlated with the thickness of the stress-adjusting layer; The second warpage change is negatively correlated with the thickness of the stress-adjusting layer.

15. The method for adjusting wafer warpage according to claim 1, characterized in that, The database includes multiple adjustment methods, with at least two adjustment methods based on the same set process step; Before determining the adjustment method based on the determined amount of warpage change, the method for adjusting wafer warpage further includes: Determine the process step in which the wafer is located; Based on the current process step, determine at least two corresponding adjustment methods.

16. The method for adjusting wafer warpage according to any one of claims 1 to 15, characterized in that, The method for adjusting wafer warpage also includes: Obtain the warpage of the wafer after adjustment; The actual change in the warp of the wafer is determined based on the warp obtained before and after the adjustment. The actual change in warpage is fed back to the database.

17. The method for adjusting wafer warpage according to claim 16, characterized in that, The method for adjusting wafer warpage also includes: The corresponding relationship used to adjust the warpage of the wafer is updated based on the actual change in warpage fed back to the database.

18. The method for adjusting wafer warpage according to any one of claims 1 to 15, characterized in that, Before providing the database, The method for adjusting wafer warpage also includes: establishing a database; The establishment of the database includes: For each correspondence, multiple sample wafers are provided, and the multiple sample wafers are in the same process step; Obtain the warpage of each sample wafer; The sample wafers were processed using different process conditions to adjust their warpage. Obtain the warpage of the sample wafer after adjustment; Based on the warp value obtained before adjustment and the warp value obtained after adjustment, the actual change in warp value of the sample wafer is determined. Based on the actual change in warpage and the corresponding process conditions of the sample wafer, a correspondence between the change in warpage of the wafer and the process conditions is established.

19. An apparatus for adjusting wafer warpage, characterized in that, The device for adjusting wafer warpage includes: The memory stores a database; the database includes at least one correspondence, which is a correspondence between the warpage variation of the wafer and the process conditions; The receiver is configured to receive the warpage of the wafer to be adjusted from the inspection equipment; The processor is configured to: determine a change in wafer warpage based on the wafer warpage received by the receiver and a corresponding target warpage; determine a correspondence to be used to adjust the wafer warpage based on the determined change in warpage; and determine process conditions corresponding to the change in wafer warpage based on the determined correspondence; and... A transmitter is configured to send process conditions determined by the processor to an operating device, so that the operating device processes the wafer according to the determined process conditions; The database includes at least two adjustment methods, the number of corresponding relationships is multiple, and at least two of the corresponding relationships are based on the same adjustment method; The step of determining the corresponding relationship to adjust the warpage of the wafer based on the determined warpage change includes: The adjustment method is determined based on the determined change in warpage. From the plurality of said correspondences, determine at least one correspondence based on the adjustment method; Based on the determined amount of warpage change, determine from at least one determined correspondence the correspondence to be used to adjust the warpage of the wafer.

20. The apparatus for adjusting wafer warpage according to claim 19, characterized in that, The receiver is also configured to receive the wafer-adjusted warpage from the detection device; The processor is further configured to determine the actual change in warpage of the wafer based on the warpage obtained before adjustment and the warpage obtained after adjustment; and to feed back the actual change in warpage to the database.

21. An advanced process control system, characterized in that, The advanced process control system includes: The apparatus for adjusting wafer warpage as described in claim 19 or 20; An inspection device is configured to detect the warpage of a wafer and transmit the detected wafer warpage to the device for adjusting wafer warpage; and, The operating equipment is configured to process the wafer according to process conditions from the device for adjusting wafer warpage, thereby adjusting the wafer warpage.

22. The advanced process control system according to claim 21, characterized in that, The operating equipment includes ion implantation equipment and / or deposition equipment.

23. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores computer program instructions that, when executed on a computer, cause the computer to perform the method for adjusting wafer warpage as described in any one of claims 1 to 18.

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