Modular intelligent power system with anodized layer and method for manufacturing the same

By partially anodizing on the lower surface of the metal substrate strong power area of ​​the modular intelligent power system, the problems of low pressure resistance and low heat dissipation ability of the substrate are solved, and higher voltage resistance and heat dissipation properties are achieved.

CN114664764BActive Publication Date: 2025-04-15GUANGDONG HIIC SEMICON LTD
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Patent Information

Application Number
CN202210250675.6
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-03-15
Publication Date
2025-04-15
Estimated Expiration
2042-03-15

AI Technical Summary

Technical Problem

The existing modular intelligent power system has low voltage resistance and low heat dissipation capabilities.

Method used

A modular intelligent power system equipped with anodic oxide layer is adopted to form an anodic oxide layer by partial anodizing on the lower surface of the strong electric area of ​​the metal substrate, which improves the pressure resistance of the substrate, and increases the bonding force between the metal substrate and the package after packaging, thereby improving the heat dissipation ability.

Benefits of technology

The voltage resistance and heat dissipation capabilities of the modular intelligent power system are improved, and the low voltage resistance and heat dissipation problems of the substrate are avoided.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present invention discloses a modular intelligent power system provided with an anodized layer, comprising a metal substrate, an insulating layer, a chip and an anodized layer; the upper surface of the metal substrate is covered with an insulating layer, and the upper surface of the insulating layer is provided with a chip; the lower surface of the metal substrate is covered with an anodized layer; the metal substrate is divided into a plurality of high-voltage areas and a plurality of wiring areas, the high-voltage areas and the wiring areas are staggered, the chip is arranged directly above the high-voltage areas, and the anodized layer is arranged directly below the high-voltage areas. Also disclosed is a method for manufacturing a modular intelligent power system provided with an anodized layer. The modular intelligent power system provided with an anodized layer and the method for manufacturing the modular intelligent power system of the present invention solve the problems of low voltage resistance and low heat dissipation capacity of the existing modular intelligent power system substrate.
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Description

Technical Field

[0001] The invention relates to the field of semiconductor technology, in particular to a modular intelligent power system provided with an anodic oxide layer and a manufacturing method thereof. Background Art

[0002] The modular intelligent power system MIPS (Module Intelligent Power System) not only integrates power switch devices and drive circuits, but also has built-in fault detection circuits such as overvoltage, overcurrent and overheating, and can send detection signals to the CPU or DSP for interrupt processing. It consists of high-speed, low-power consumption tube cores, optimized gate-level drive circuits and fast protection circuits. Even if a load accident or improper use occurs, it can prevent MIPS itself from being damaged. MIPS generally uses IGBT as a power switch element, and has an integrated structure of built-in current sensors and drive circuits.

[0003] The IC drive control circuit, MIPS sampling amplifier circuit and PFC current protection circuit in the modular intelligent power system are low-voltage control circuits. The low-voltage control circuit and the inverter circuit composed of the high-voltage semiconductor circuit of the existing modular intelligent power system are laid out on the same substrate. The substrate has low voltage resistance and low bonding strength between the substrate and the plastic packaging material, resulting in low heat dissipation capacity of the existing modular intelligent power system. Summary of the invention

[0004] In view of the above-mentioned defects, one object of the present invention is to provide a modular intelligent power system with an anodized layer, which solves the problems of low voltage resistance and low heat dissipation capacity of the existing modular intelligent power system substrate.

[0005] In view of the above-mentioned defects, another object of the present invention is to provide a method for manufacturing a modular intelligent power system provided with an anodized layer, which solves the problems of low voltage resistance and low heat dissipation capacity of the existing modular intelligent power system substrate.

[0006] To achieve this object, the present invention adopts the following technical solution: a modular intelligent power system provided with an anodized layer, comprising a metal substrate, an insulating layer, a chip and an anodized layer;

[0007] The upper surface of the metal substrate is covered with an insulating layer, and the upper surface of the insulating layer is provided with a chip;

[0008] The lower surface of the metal substrate is covered with an anodized layer;

[0009] The metal substrate is divided into a plurality of strong electric areas and a plurality of wiring areas, the strong electric areas and the wiring areas are staggered, the chip is arranged directly above the strong electric area, and the anodized layer is arranged directly below the strong electric area.

[0010] It is worth noting that the area of ​​the transverse cross section of the anodized layer is larger than the area of ​​the transverse cross section of the high-voltage zone.

[0011] Optionally, the modular intelligent power system further includes a copper foil layer, which covers the upper surface of the insulating layer, and the copper foil layer is arranged directly above the wiring area, and the copper foil layer is electrically connected to the chip.

[0012] Specifically, the modular intelligent power system further includes a green oil layer, and the green oil layer covers the upper surface of the copper foil layer.

[0013] Preferably, the modular intelligent power system further comprises a heat sink, which is arranged between the insulating layer and the chip, wherein the lower surface of the heat sink is connected to the upper surface of the insulating layer, and the upper surface of the heat sink is connected to the lower surface of the chip.

[0014] It is worth noting that the modular intelligent power system also includes chip resistors and chip capacitors;

[0015] The chip resistor and the chip capacitor are both arranged on the upper surface of the insulating layer, and the chip resistor and the chip capacitor are both located directly above the wiring area, the chip resistor is electrically connected to the chip, and the chip capacitor is electrically connected to the chip.

[0016] Optionally, the modular intelligent power system also includes a package and a pin; the package wraps the metal substrate, the insulating layer, the copper foil layer, the chip and the anodized layer, one end of the pin is arranged in the package and electrically connected to the copper foil layer, and the other end of the pin is arranged outside the package.

[0017] A manufacturing method for manufacturing the modular intelligent power system provided with an anodized layer, comprising the following steps:

[0018] A1: Local anodization is performed on the lower surface of the high-voltage area of ​​the metal substrate to form an anodized layer;

[0019] A2: providing an insulating layer on the upper surface of the metal substrate;

[0020] A3: a copper foil layer is provided on the upper surface of the insulating layer, and the insulating layer and the copper foil layer are pressed together to form a pressed semi-finished product;

[0021] A4: Pressing the insulating layer in the pressed semi-finished product with the upper surface of the metal substrate to form a substrate semi-finished product;

[0022] A5: After the chip is soldered to the heat sink to form a semi-finished component, it is placed just above the high-voltage area of ​​the metal substrate;

[0023] A6: Silver plate the pin surface and electrically connect it to the copper foil layer;

[0024] A7: The metal substrate, the insulating layer, the copper foil layer, the chip, the anodized layer and one end of the pin are sealed with epoxy resin to form a package body, and the other end of the pin is arranged outside the package body.

[0025] One of the above technical solutions has the following beneficial effects: the metal substrate serves as the carrier of the entire internal circuit of the modular intelligent power system and plays a heat dissipation role for the entire modular intelligent power system; the wiring area is used for wiring, and the insulating layer is used to prevent the wiring area from being energized with the metal substrate, resulting in the occurrence of short circuit and leakage risks in the internal circuit; the chip is used to realize the control of the opening and closing of the modular intelligent power system, and plays a role of continuous flow; by performing a local anodizing process on the lower surface of the high-voltage area of ​​the modular intelligent power system, after covering the anodized layer, the withstand voltage of the modular intelligent power system can be improved, and at the same time, after the modular intelligent power system is packaged, the bonding force between the metal substrate and the package body can be improved, and the heat dissipation capacity of the modular intelligent power system can be improved. Since the high-voltage area with a chip is easily broken down, the local anodizing to form an anodized layer can improve the withstand voltage strength. In addition, since the wiring area without a chip is not easy to break down, not covering the anodized layer can reduce costs. Since the anodized layer covers the side where the chip is not set, the anodized layer will not hinder the layout of the chip and the wiring of the circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a schematic structural diagram of an embodiment of the present invention;

[0027] Figure 2 yes Figure 1 An enlarged schematic diagram of circle A;

[0028] Among them: 1 metal substrate; 2 insulation layer; 3 chip; 4 anodized layer; 5 copper foil layer; 6 heat sink; 7 chip resistor; 8 chip capacitor; 9 pins; 10 package body; 11 green oil layer; 12 binding metal wire; 13 high power area; 14 wiring area. DETAILED DESCRIPTION

[0029] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0030] In the description of the present invention, it is necessary to understand that the terms "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0031] In the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0032] Combine the following Figure 1 to Figure 2 , describing a modular intelligent power system with an anodized layer according to an embodiment of the present invention, comprising a metal substrate 1, an insulating layer 2, a chip 3 and an anodized layer 4;

[0033] The upper surface of the metal substrate 1 is covered with an insulating layer 2, and a chip 3 is provided on the upper surface of the insulating layer 2;

[0034] The lower surface of the metal substrate 1 is covered with an anodized layer 4;

[0035] The metal substrate 1 is divided into a plurality of high-power areas 13 and a plurality of wiring areas 14 . The high-power areas 13 and the wiring areas 14 are staggered. The chip 3 is arranged directly above the high-power areas 13 , and the anodized layer 4 is arranged directly below the high-power areas 13 .

[0036] The metal substrate 1 is used as the carrier of the entire internal circuit of the modular intelligent power system and plays a heat dissipation role for the entire modular intelligent power system; the wiring area 14 is used for wiring, and the insulating layer 2 is used to prevent the wiring area 14 from being energized with the metal substrate 1, resulting in the risk of short circuit and leakage in the internal circuit; the chip 3 is used to realize the control of the opening and closing of the modular intelligent power system, and plays a role of continuous current; by performing a local anodizing process on the lower surface of the strong electric area 13 of the modular intelligent power system, after covering the anodized layer 4, the withstand voltage of the modular intelligent power system can be improved, and at the same time, after the modular intelligent power system is packaged, the bonding force between the metal substrate 1 and the package body 10 can be improved, and the heat dissipation capacity of the modular intelligent power system can be improved. Since the strong electric area 13 with the chip 3 is easily broken down, the local anodizing to form the anodized layer 4 can improve the withstand voltage strength. In addition, since the wiring area 14 without the chip 3 is not easy to break down, not covering the anodized layer 4 can reduce the cost. Since the anodized layer 4 covers the side where the chip 3 is not set, the anodized layer 4 will not hinder the layout of the chip 3 and the wiring of the circuit.

[0037] The metal or alloy workpiece is used as the anode, and an oxide film is formed on its surface by electrolysis to obtain an anodic oxide layer 4. The metal oxide film changes the surface state and performance, such as surface coloring, improving corrosion resistance, enhancing wear resistance and hardness, protecting the metal surface, etc. For example, in aluminum anodization, aluminum and its alloys are placed in a corresponding electrolyte (such as sulfuric acid, chromic acid, oxalic acid, etc.) as an anode, and electrolysis is carried out under specific conditions and the action of an external current. The aluminum or its alloy of the anode is oxidized, and a thin layer of aluminum oxide is formed on the surface, with a thickness of 5 to 30 microns, and the hard anodized film can reach 25 to 150 microns. The aluminum or its alloy after anodization has improved its hardness and wear resistance, which can reach 250 to 500 kg / mm2, good heat resistance, hard anodized film has a melting point of up to 2320K, excellent insulation, and a breakdown voltage of up to 2000V, which enhances corrosion resistance and does not corrode in ω=0.03NaCl salt spray for thousands of hours. The oxide film thin layer has a large number of micropores, which can absorb various lubricants and is suitable for manufacturing engine cylinders or other wear-resistant parts; the film micropores have strong adsorption capacity and can be colored into various beautiful and bright colors. In this embodiment, the metal substrate 1 is preferably an aluminum substrate. Anodizing of aluminum is an electrolytic oxidation process, in which the surface of aluminum and aluminum alloys is usually converted into an oxide film to form an anodized layer 4, which has protective and decorative properties.

[0038] In some embodiments, the area of ​​the transverse cross section of the anodized layer 4 is larger than the area of ​​the transverse cross section of the high-voltage zone 13. The side of the metal substrate 1 on which the chip 3 is disposed is located on the other side covering the anodized layer 4. Since the wiring of the chip 3 is located in the wiring area 14, when the area of ​​the transverse cross section of the anodized layer 4 is larger than the area of ​​the transverse cross section of the high-voltage zone 13, the anodized layer 4 can protect the position of the chip 3 wiring and prevent the position from being broken down.

[0039] It is worth noting that the modular intelligent power system further includes a copper foil layer 5, which covers the upper surface of the insulating layer 2 and is arranged directly above the wiring area 14. The copper foil layer 5 is electrically connected to the chip 3. The required circuit wiring is formed by etching the copper foil layer 5 to form a circuit wiring layer.

[0040] Optionally, the modular intelligent power system further includes a green oil layer 11, and the green oil layer 11 covers the upper surface of the copper foil layer 5. The upper surface of the copper foil layer 5 is covered with the green oil layer 11, and the green oil layer 11 protects the copper foil layer 5, prevents the physical disconnection of the copper foil layer 5, and can also prevent short circuits caused by bridging in the welding process, reduce copper contamination of the welding tank, and prevent insulation deterioration and corrosion caused by external environmental factors such as dust or moisture.

[0041] Specifically, the modular intelligent power system further includes a heat sink 6, which is disposed between the insulating layer 2 and the chip 3, the lower surface of the heat sink 6 is connected to the upper surface of the insulating layer 2, and the upper surface of the heat sink 6 is connected to the lower surface of the chip 3. The heat sink 6 is insulated from the copper foil layer 5. The surface of the heat sink 6 is silver-plated, which plays a role in heat dissipation for the chip 3 mounted on the surface of the heat sink 6.

[0042] Preferably, the modular intelligent power system further comprises a chip resistor 7 and a chip capacitor 8; the chip resistor 7 and the chip capacitor 8 are both arranged on the upper surface of the insulating layer 2, and the chip resistor 7 and the chip capacitor 8 are both located directly above the wiring area 14, the chip resistor 7 is electrically connected to the chip 3, and the chip capacitor 8 is electrically connected to the chip 3. The current passing through the chip resistor 7 and the chip capacitor 8 is not large, so they can be arranged directly above the wiring area 14. It is worth noting that the chip capacitor 8 plays the role of filtering, coupling and bootstrapping in the modular intelligent power system. The chip 3 includes an IGBT chip, and the gate of the IGBT chip is electrically connected to the chip resistor 7. The chip resistor 7 plays the role of current limiting, and is electrically connected to the gate of the IGBT chip in the modular intelligent power system, and the switching speed of the IGBT chip is limited by current limiting.

[0043] In some embodiments, the modular intelligent power system further includes a package 10 and pins 9; the package 10 wraps the metal substrate 1, the insulating layer 2, the copper foil layer 5, the chip 3 and the anodized layer 4, one end of the pin 9 is arranged in the package 10 and electrically connected to the copper foil layer 5, and the other end of the pin 9 is arranged outside the package 10. The modular intelligent power system further includes a binding metal wire 12, the binding metal wire 12 is electrically connected to the chip 3, the binding metal wire 12 is arranged in the package 10, and when some chip pins between two chips 3 cannot be directly electrically connected through the copper foil layer 5, they are electrically connected through the binding metal wire 12.

[0044] The package 10 is a powdered molding compound made of epoxy resin as a base resin, high-performance phenolic resin as a curing agent, silicon powder as a filler, and a variety of additives, and has an insulating effect. It is extruded into a mold cavity by a heat transfer molding method and the metal substrate 1, the insulating layer 2, the copper foil layer 5, the chip 3 and the anodized layer 4 therein are embedded, and cross-linked and cured to form a device with a certain external structure, thereby protecting the components located in the package. The material of the pin 9 is C194 (-1 / 2H) (chemical composition: Cu (≧97.0%), Fe: 2.4%, P: 0.03% and Zn: 0.12%) or KFC (-1 / 2H) (chemical composition: Cu (≧99.6%), Fe: 0.05%~0.15% and P: 0.025%~0.04%), and a 0.5mm copper sheet is stamped by machining to form the required shape, and then the surface is first nickel-plated with a thickness of 0.1-0.5um and then tin-plated with a thickness of 2-5um.

[0045] A manufacturing method for manufacturing the modular intelligent power system provided with an anodized layer, comprising the following steps:

[0046] A1: Local anodization is performed on the lower surface of the high-voltage region 13 of the metal substrate 1 to form an anodized layer 4;

[0047] A2: an insulating layer 2 is provided on the upper surface of the metal substrate 1;

[0048] A3: a copper foil layer 5 is provided on the upper surface of the insulating layer 2, the insulating layer 2 and the copper foil layer 5 are pressed together to form a pressed semi-finished product, and a circuit wiring layer is formed in the wiring area by etching the copper foil;

[0049] A4: Pressing the insulating layer 2 in the pressed semi-finished product with the upper surface of the metal substrate 1 to form a substrate semi-finished product;

[0050] A5: After the chip 3 is welded to the heat sink 6 to form a semi-finished component, it is arranged just above the high-voltage area 13 of the metal substrate 1;

[0051] A6: Silver-plating the surface of pin 9 electrically connects it to the copper foil layer 5;

[0052] A7: The metal substrate 1 , the insulating layer 2 , the copper foil layer 5 , the chip 3 , the anodized layer 4 and one end of the pin 9 are sealed with epoxy resin to form a package body 10 , and the other end of the pin 9 is arranged outside the package body 10 .

[0053] In one embodiment, the chip 3 includes a PFC chip, and the manufacturing method of the modular intelligent power system is as follows:

[0054] First, place the heat sink 6 with silver-plated surface into a special carrier, apply solder paste or silver glue at a specific position on the surface of the heat sink 6, and then mount the PFC chip on the heat sink 6 through a soft solder bonding machine to form a semi-finished component. The mounting quality of the PFC chip is inspected by visual inspection AOI equipment. Place the metal substrate 1 with an anodized layer 4 formed by partial anodization on the surface into a special carrier (the carrier can be aluminum, synthetic stone, ceramic or PPS and other materials with high temperature resistance above 200°C), and apply solder paste or apply silver glue to the component mounting position reserved in the copper foil layer 5. The chip 3 including the semiconductor inverter circuit is mounted on the component mounting position through an automatic bonding device (DA machine), and the semi-finished component, chip resistor 7 and chip capacitor 8 are mounted on the component mounting position through an automatic SMT device. The lead frame semi-finished product is placed on the corresponding welding position of the metal substrate 1 by a robot or manually, and then the entire semi-finished product including the carrier is put through a reflow furnace to solder all the components. After being connected to the corresponding installation position, the welding quality of components such as chip 3, chip resistor 7 and chip capacitor 8 is detected by visual inspection AOI equipment, and foreign matter such as flux and aluminum chips remaining on the insulating layer 2 is removed by spraying or ultrasonic cleaning methods. The copper foil layer 5 of chip 3, chip resistor 7 and chip capacitor 8 is electrically connected by binding metal wire 12. The products are plastic-sealed in a specific mold by packaging equipment, and then marked by laser marking. The products are post-cured and stress-relieved in a high-temperature oven. The connecting ribs and dummy pins of pin 9 are cut off and shaped into the required shape by rib cutting and forming equipment. Finally, electrical parameter tests are performed to form the final qualified products.

[0055] The modular intelligent power system uses a metal substrate 1 as a carrier; local anodization is performed at a specific position of the circuit high-voltage part (such as a PFC chip or an inverter circuit) on the lower surface of the metal substrate 1 to form an anodized layer 4; an insulating layer 2 is arranged between the metal substrate 1 and the copper foil layer 5; the copper foil layer 5 is used to form a circuit wiring layer; the insulating layer 2 and the copper foil layer 5 are pressed together to form a pressed semi-finished product; the insulating layer 2 of the pressed semi-finished product is pressed together with the upper surface of the metal substrate 1 to form a substrate semi-finished product; a circuit wiring layer is formed on the surface of the copper foil layer 5 in the substrate semi-layer product; a green oil layer 11 for protection is formed on the circuit wiring layer to form a substrate finished product; the chip 3 is welded to the heat sink 6 to form a component semi-finished product; the surface of the pin 9 is partially silver-plated and electrically connected to the circuit wiring, and extends outward as input and output; the circuit components are arranged at a specific position of the circuit wiring; a metal wire 12 is bound to electrically connect the circuit wiring with the circuit components; at least the connection part between the pin 9 and the circuit wiring is sealed by epoxy resin, and at least a part of the pin 9 extending outward is not sealed by the resin and is exposed;

[0056] In another embodiment, the manufacturing method of the modular intelligent power system is as follows:

[0057] The metal substrate 1 is used as a carrier;

[0058] Locally anodizing a specific position on the lower surface of the metal substrate 1, wherein the specific position is a high-voltage part of the circuit, such as a PFC chip or an inverter circuit;

[0059] A step of providing a copper foil layer 5 on the upper surface of the metal substrate 1;

[0060] Forming circuit wiring on the copper foil layer 5 by etching;

[0061] Forming a green oil layer 11 for circuit protection on the surface of the circuit wiring;

[0062] A metal connector is formed by performing a plating process on the surface of the metal copper material of a specific shape that is not covered by the green oil layer 11;

[0063] A plating layer is formed on the surface of a metal connector of a specific shape to form a pin 9;

[0064] Apply adhesive material with certain fluidity at specific locations of circuit wiring;

[0065] Solder the chip 3 on the surface of the heat sink 6;

[0066] placing circuit components on the bonding material;

[0067] Allowing the bonding material to cure;

[0068] Removing pollutants such as flux and aluminum chips remaining on the metal substrate 1 by spraying or ultrasonic cleaning methods;

[0069] By binding the metal wire 12, an electrical connection is formed between the circuit element and the circuit wiring;

[0070] The metal substrate 1 and the pin 9 are sealed and fixed by means of plastic packaging, so that a specific position of a circuit wiring with a specific potential is not filled with resin, so that the other end of the pin 9 is exposed outside the package;

[0071] Test electrical parameters and appearance parameters through testing equipment;

[0072] After the test is passed, the modular intelligent power system of the embodiment is manufactured.

[0073] Other structures and operations of a modular intelligent power system with an anodized layer according to an embodiment of the present invention are known to those skilled in the art and will not be described in detail here.

[0074] In the description of this specification, the description with reference to the terms "embodiment", "example", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0075] Although the embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A modular intelligent power system with an anodized layer, characterized in that: It includes a metal substrate, an insulating layer, a chip and an anodized layer; The upper surface of the metal substrate is covered with an insulating layer, and the upper surface of the insulating layer is provided with a chip; The lower surface of the metal substrate is covered with an anodized layer; The metal substrate is divided into a plurality of strong electric areas and a plurality of wiring areas, the strong electric areas and the wiring areas are staggered, the chip is arranged directly above the strong electric area, and the anodized layer is only arranged directly below the strong electric area; The area of ​​the transverse cross section of the anodized layer is greater than the area of ​​the transverse cross section of the high-voltage region; The modular intelligent power system further comprises a heat sink, which is arranged between the insulating layer and the chip, wherein the lower surface of the heat sink is connected to the upper surface of the insulating layer, and the upper surface of the heat sink is connected to the lower surface of the chip; The modular intelligent power system further includes a copper foil layer, which covers the upper surface of the insulating layer and is arranged directly above the wiring area. The copper foil layer is electrically connected to the chip.

2. A modular intelligent power system with an anodized layer according to claim 1, characterized in that: The modular intelligent power system further includes a green oil layer, and the green oil layer covers the upper surface of the copper foil layer.

3. A modular intelligent power system with an anodized layer according to claim 1, characterized in that: The modular intelligent power system also includes chip resistors and chip capacitors; The chip resistor and the chip capacitor are both arranged on the upper surface of the insulating layer, and the chip resistor and the chip capacitor are both located directly above the wiring area, the chip resistor is electrically connected to the chip, and the chip capacitor is electrically connected to the chip.

4. A modular intelligent power system with an anodized layer according to claim 1, characterized in that: The modular intelligent power system also includes a package body and a pin; the package body wraps the metal substrate, the insulating layer, the copper foil layer, the chip and the anodized layer, one end of the pin is arranged in the package body and electrically connected to the copper foil layer, and the other end of the pin is arranged outside the package body.

5. A manufacturing method, characterized in that: Manufacturing a modular intelligent power system with an anodized layer as claimed in any one of claims 1 to 4 comprises the following steps: A1: Local anodization is performed on the lower surface of the high-voltage area of ​​the metal substrate to form an anodized layer; A2: providing an insulating layer on the upper surface of the metal substrate; A3: a copper foil layer is provided on the upper surface of the insulating layer, and the insulating layer and the copper foil layer are pressed together to form a pressed semi-finished product; A4: Pressing the insulating layer in the pressed semi-finished product with the upper surface of the metal substrate to form a substrate semi-finished product; A5: After the chip is soldered to the heat sink to form a semi-finished component, it is placed just above the high-voltage area of ​​the metal substrate; A6: Silver plate the pin surface and electrically connect it to the copper foil layer; A7: The metal substrate, the insulating layer, the copper foil layer, the chip, the anodized layer and one end of the pin are sealed with epoxy resin to form a package body, and the other end of the pin is arranged outside the package body.

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