Substrate processing equipment and substrate processing method

Abstract

Disclosed are a substrate processing apparatus and a substrate processing method. According to an embodiment of the present invention, performing a purging operation of a purging nozzle while moving a nozzle arm from a first substrate support member to a second substrate support member substantially does not affect a substrate processing operation while moving the nozzle arm from the first substrate support member to the second substrate support member. According to an embodiment of the present invention, the substrate processing apparatus can perform a purging operation of the photosensitive liquid nozzle while a processing liquid supply unit is supplying photosensitive liquid to a substrate. Therefore, because the purging operation of the photosensitive liquid nozzle is performed while the substrate processing apparatus is performing a process, productivity can be improved.

Description

[0001] This application is a divisional application with the application date of July 20, 2018, application number 201810805800.9, and invention name “Substrate processing equipment and substrate processing method”. Technical Field

[0002] Embodiments of the inventive concepts disclosed herein relate to a substrate processing apparatus and a substrate processing method. Background Art

[0003] Various processes such as cleaning, deposition, photolithography, etching, and ion implantation are performed to manufacture semiconductor devices. The photolithography process performed to form a pattern plays an important role in obtaining a highly integrated semiconductor device.

[0004] The photolithography process is performed by applying a photosensitive liquid onto a substrate. During the photosensitive liquid application process, a predetermined amount of the liquid is applied while the substrate rotates. A purge operation is performed to adjust the state of the nozzle used to apply the liquid and the pipe connected to the nozzle. The purge operation is performed by discharging a predetermined amount of the liquid. Summary of the Invention

[0005] Embodiments of the inventive concept provide a substrate processing apparatus that can efficiently process a substrate, and a substrate processing method.

[0006] Embodiments of the inventive concept also provide a substrate processing apparatus and a substrate processing method that can perform a purge operation while a substrate is being processed.

[0007] According to one aspect of the present invention, there is provided a substrate processing apparatus, comprising: a first substrate supporting member and a second substrate supporting member configured to support a substrate; a plurality of nozzles configured to discharge a processing liquid to a substrate located between the first substrate supporting member and the second substrate supporting member; a nozzle arm configured to support the nozzles; a purge port provided between the first substrate supporting member and the second substrate supporting member; a driving member configured to move the nozzle arm between any two of the first substrate supporting member, the purge port, and the second supporting member; and a controller configured to control the nozzle arm and the driving member; wherein, in a process in which the nozzle arm moves to the other of the first substrate supporting member and the second substrate supporting member after discharging the processing liquid to one of the first substrate supporting member and the second substrate supporting member, the controller controls the nozzle arm and the driving member so that a purge nozzle, one of the plurality of nozzles, performs a purge operation by discharging the processing liquid to the purge port.

[0008] The controller may allow the purge nozzle to perform a preset number of purge operations during movement of the nozzle arm between the first substrate supporting member and the second substrate supporting member.

[0009] The purging operation may be continuously performed a preset number of times during the movement of the nozzle arm between the first substrate supporting member and the second substrate supporting member.

[0010] The purging operation may be intermittently performed a preset number of times during the movement of the nozzle arm between the first substrate supporting member and the second substrate supporting member.

[0011] The purge port includes a cleaner configured to clean the nozzle, and the controller may control the cleaner so that the cleaner cleans the purge nozzle after performing a preset number of purge operations.

[0012] If it is confirmed that the purge nozzle is to be used in the first substrate supporting member or the second substrate supporting member after the purge operation of the purge nozzle is started, the controller may generate an alarm.

[0013] The substrate processing apparatus further includes a holder in which a cartridge receiving the substrate is located, and if it is confirmed that the purge nozzle is to be used in the first substrate supporting member or the second substrate supporting member after a purge operation of the purge nozzle is started, the controller may stop taking the substrate out of the cartridge.

[0014] If it is confirmed that the purge nozzle is to be used in the first or second substrate supporting member after the purge operation of the purge nozzle starts, the controller may stop bringing the substrate into one of the first and second substrate supporting members where the purge nozzle is predetermined to be used.

[0015] The plurality of nozzles may discharge a photosensitive liquid.

[0016] According to another aspect of the inventive concept, a substrate processing method is provided, wherein a substrate is processed by discharging a processing liquid while a nozzle arm having a plurality of nozzles moves between a first substrate supporting member and a second substrate supporting member that support the substrate, and wherein, after the nozzle arm discharges the processing liquid toward one of the first substrate supporting member and the second substrate supporting member, during a process of moving the nozzle arm to the other of the first substrate supporting member and the second substrate supporting member, a purge nozzle that is one of the plurality of nozzles performs a purge operation by discharging the processing liquid into a purge port located between the first substrate supporting member and the second substrate supporting member.

[0017] A purging operation of purging the nozzle may be performed a preset number of times during the movement of the nozzle arm between the first substrate supporting member and the second substrate supporting member.

[0018] The purge port may clean the purge nozzle after the purge nozzle performs a preset number of purge operations.

[0019] If it is confirmed that the purging nozzle discharges the processing liquid to the first substrate supporting member or the second substrate supporting member before the purging operation is performed a preset number of times after the purging operation of the purging nozzle is started, an interlock operation is performed. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The above and other objects and features of the inventive concept will become apparent by describing in detail exemplary embodiments of the present invention with reference to the accompanying drawings.

[0021] Figure 1 is a view of a substrate processing apparatus viewed from the top;

[0022] Figure 2 To follow Figure 1 AA line Figure 1 A cross-sectional view of the system;

[0023] Figure 3 To follow Figure 1 BB line Figure 1 A cross-sectional view of the system;

[0024] Figure 4 To follow Figure 1 CC line Figure 1 A cross-sectional view of the device;

[0025] Figure 5 is a plan view of a resist coating chamber according to an embodiment of the present inventive concept;

[0026] Figure 6 for Figure 5 A side view of a resist coating chamber in FIG.

[0027] Figure 7 for Figure 5 A perspective view of a nozzle arm;

[0028] Figure 8 A view showing a pipe connected to one of the photosensitive liquid nozzles;

[0029] Figure 9 A block diagram illustrating the process of a purge operation;

[0030] Figure 10A view showing a state where the photosensitive liquid nozzle is purged to the purge port;

[0031] Figure 11 A diagram showing some connection relationships of the controller; and

[0032] Figure 12 It is a view showing a state of cleaning the purge nozzle. DETAILED DESCRIPTION

[0033] Hereinafter, exemplary embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The embodiments of the present invention may be modified in various ways, and the scope of the present invention should not be construed as limited to the following embodiments. The embodiments of the present invention are provided to provide a more complete description of the present invention to those skilled in the art. Therefore, the shapes of the components in the accompanying drawings are exaggerated to emphasize their clearer description.

[0034] The system of this embodiment is used to perform photolithography processes on substrates (e.g., semiconductor wafers or flat panel displays). Specifically, the system of this embodiment is used to perform coating, development, and pre- and post-exposure processes required before and after liquid immersion and exposure on the substrate. The following description uses a substrate as an example.

[0035] Figures 1 to 4 is a view exemplarily illustrating a substrate processing apparatus according to an embodiment of the inventive concept. Figure 1 is a diagram of a substrate processing apparatus viewed from the top. Figure 2 It is along Figure 1 AA line Figure 1 A cross-sectional view of the device in FIG. Figure 3 It is along Figure 1 BB line Figure 1 A cross-sectional view of the system in FIG. Figure 4 It is along Figure 1 CC line Figure 1 A cross-sectional view of the device in FIG.

[0036] refer to Figures 1 to 4The substrate processing apparatus 1 includes a loading port 100, an index module 200, a first buffer module 300, an application / development module 400, a second buffer module 500, a front / back exposure processing module 600, an interface module 700, a purge module 800, and a controller 1000. The loading port 100, the index module 200, the first buffer module 300, the application / development module 400, the second buffer module 500, the front / back exposure processing module 600, and the interface module 700 are sequentially arranged in a row in one direction. The purge module 800 can be arranged in the interface module 700, and optionally, the purge module 800 can be arranged in a different position, such as at the rear end of the interface module 700 where the exposure apparatus 900 is connected or at the side of the interface module 700.

[0037] Hereinafter, the direction in which the loading port 100, the index module 200, the first buffer module 300, the coating / developing module 400, the second buffer module 500, the front / rear exposure processing module 600, and the interface module 700 are arranged will be referred to as a first direction 12, and a direction perpendicular to the first direction 12 when viewed from the top will be referred to as a second direction 14, and a direction perpendicular to the first direction 12 and the second direction 14 will be referred to as a third direction 16.

[0038] The wafer W is moved while being received in a cassette 20. The cassette has a structure sealed from the outside. For example, a front open unified pod (FOUP) having a door on the front side can be used as the cassette 20.

[0039] Hereinafter, the loading port 100 , the index module 200 , the first buffer module 300 , the coating / developing module 400 , the second buffer module 500 , the front / back exposure processing module 600 , the interface module 700 , and the purge module 800 will be described in detail.

[0040] (Loading port)

[0041] The loading port 100 has a holder 120 in which a cassette 20 is positioned, and the cassette receives the wafer W. A plurality of carriers 120 are provided and arranged in a row along the second direction 14. Figure 1 In the embodiment, four carriers 120 are provided.

[0042] (Index Module)

[0043] The index module 200 feeds wafers W between the cassette 20 positioned on the carrier 120 of the loading port 100 and the first buffer module 300. The index module has a frame 210, an index robot 220, and a guide rail 230. The frame 210 has a generally rectangular parallelepiped shape with a hollow interior and is disposed between the loading port 100 and the first buffer module 300. The frame 210 of the index module 200 may have a height that is smaller than the height of the frame 310 of the first buffer module 300, which will be described below. The index robot 220 and the guide rail 230 are located in the frame 210. The index robot 220 has a four-axis drive structure so that the hand 221 that directly holds the wafer W is movable and rotatable in the first direction 12, the second direction 14, and the third direction 16. The indexing robot 220 has a hand 221, an arm 222, a bracket 223, and a prop 224. The hand 221 is fixedly installed in the arm 222. The arm 222 has a bendable and rotatable structure. The bracket 223 is configured so that its length direction is arranged along the third direction 16. The arm 222 is connected to the bracket 223 and is movable along the bracket 223. The bracket 223 is fixedly connected to the prop 224. The guide rail 230 is configured so that its length direction is arranged along the second direction 14. The prop 224 is connected to the guide rail 230 so as to be linearly movable along the guide rail 230. Although not shown, the frame 210 is also provided with a door opener for opening and closing the door of the card box 20.

[0044] (First buffer module)

[0045] The first buffer module 300 includes a frame 310, a first buffer 320, a second buffer 330, a cooling chamber 350, and a first buffer robot 360. The frame 310 has a rectangular parallelepiped shape with a hollow interior and is disposed between the index module 200 and the coating / development module 400.

[0046] The first buffer zone 320, the second buffer zone 330, the cooling chamber 350, and the first buffer robot 360 are located inside the frame 310. The cooling chamber 350, the second buffer zone 330, and the first buffer zone 320 are sequentially arranged from the bottom along the third direction 16.

[0047] The first buffer zone 320 is located at a height corresponding to the coating module 401 of the coating / developing module 400, which will be described below. The second buffer zone 300 and the cooling chamber 350 are located at a height corresponding to the developing module 402 of the coating / developing module 400, which will be described below. The first buffer robot 360 is spaced apart from the second buffer zone 330, the cooling chamber 350, and the first buffer zone 320 by a predetermined distance in the second direction 14.

[0048] The first buffer zone 320 and the second buffer zone 330 temporarily store a plurality of wafers W. The second buffer zone 330 includes a housing 331 and a plurality of racks 332. The racks 332 are disposed within the housing 331 and are spaced apart from one another along the third direction 16. A wafer W is positioned on each rack 332. The housing has openings (not shown) on one side where the index robot 220 is disposed, on one side where the first buffer robot 360 is disposed, and on one side where the development robot 482 is disposed. This allows the index robot 220, the first buffer robot 360, and the development robot 482 of the development module 402 to bring wafers W into or out of the racks 332 on the housing 331, as will be described below. The first buffer zone 320 has a structure substantially the same as that of the second buffer zone 330. The housing 321 of the first buffer zone 320 has openings on the side where the first buffer robot 360 is located, and on the side where the application robot 432 located in the coating module 401 is located, as described below. The number of racks 322 provided for the first buffer zone 320 and the number of racks 332 provided for the second buffer zone 330 can be the same or different. Depending on the embodiment, the number of racks 332 provided for the second buffer zone 330 can be greater than the number of racks 322 provided for the first buffer zone 320.

[0049] The first buffer robot 360 feeds wafers W between the first buffer zone 320 and the second buffer zone 330. The first buffer robot includes a hand 361, an arm 362, and a support 363. The hand 361 is fixedly mounted in the arm 362. The arm 362 has a flexible structure and allows the hand 361 to be moved in the second direction 14. The arm 362 is connected to the support 363 so that the support 363 is linearly movable in the third direction 16. The support 363 extends from a position corresponding to the second buffer zone 330 to a position corresponding to the first buffer zone 320. The support 363 can be configured to extend further upward or downward. The first buffer robot 360 can be configured so that the hand 361 is simply driven in two axes in the second direction 14 and the third direction 16.

[0050] The cooling chamber 350 cools the wafer W. The cooling chamber 350 includes a housing 351 and a cooling plate 352. The cooling plate 352 includes a cooling unit 353 for cooling its upper surface and the wafer W, on which the wafer W is positioned. The cooling unit 353 can employ various cooling methods, such as cooling water and thermoelectric elements. A lift pin assembly for positioning the wafer W on the cooling plate 352 may be provided in the cooling chamber 350. The housing 351 includes openings (not shown) on one side where the index robot 220 is provided and on one side where the development robot 482 is provided, allowing the index robot 220 and the development robot 482 provided in the development module 402 to bring the wafer W into or out of the cooling plate 352, as will be described below. A door (not shown) for opening or closing the aforementioned openings may be provided in the cooling chamber 350.

[0051] (Coating / Developing Module)

[0052] The application / development module 400 performs a process of applying photoresist to the wafer W before the exposure process and a process of developing the wafer W after the exposure process. The application / development module 400 has a substantially rectangular parallelepiped shape. The application / development module 400 includes an application module 401 and a development module 402. The application module 401 and the development module 402 can be arranged to be separated from each other in different layers. According to an example, the application module 401 is located above the development module 402.

[0053] The application module 401 performs a process of applying a photosensitive liquid, such as photoresist, to the wafer W and a heat treatment process, such as heating or cooling the wafer W before and after the resist application process. The application module 401 has a resist applying chamber 410, a baking chamber 420, and a carrying chamber 430. The resist applying chamber 410, the baking chamber 420, and the carrying chamber 430 are arranged in sequence along the second direction 14. Therefore, the resist applying chamber 410 and the baking chamber 420 are spaced apart from each other in the second direction 14, with the carrying chamber 430 inserted between the resist applying chamber 410 and the baking chamber 420. A plurality of resist applying chambers 410 can be provided, and a plurality of resist applying chambers 410 can be arranged in each of the first direction 12 and the third direction 16. In the accompanying drawings, six resist applying chambers 410 are shown as an example. A plurality of baking chambers 420 may be provided in each of the first direction 12 and the third direction 16. In the drawings, six baking chambers 420 are shown as an example. However, a greater number of baking chambers 420 may be provided.

[0054] The transfer chamber 430 is arranged parallel to the first buffer zone 320 of the first buffer module 300 in the first direction 12. A coating robot 432 and a guide rail 433 are located within the transfer chamber 430. The transfer chamber 430 has a generally rectangular shape. The coating robot 432 feeds wafers W between the baking chamber 420, the resist application chamber 400, the first buffer zone 320 of the first buffer module 300, and the first cooling chamber 520 of the second buffer module 500. The guide rail 433 is arranged so that its length is parallel to the first direction 12. The guide rail 433 guides the coating robot 432, allowing it to move linearly in the first direction 12. The coating robot 432 includes a hand 434, an arm 435, a support 436, and a support 437. The hand 434 is fixedly mounted within the arm 435. The arm 435 has a flexible structure, allowing the hand 434 to move horizontally. The support 436 is arranged so that its length extends along the third direction 16. The arm 435 is connected to a bracket 436 so as to be linearly movable in the third direction 16 along the bracket 436. The bracket 436 is fixedly connected to the support 437, and the support 437 is connected to the guide rail so as to be movable along the guide rail 433.

[0055] The resist application chamber 410 has the same structure. However, the type of photoresist used in the resist application chamber 410 may be different. For example, the photoresist may be a chemical amplification resist. The resist application chamber 410 applies the photoresist onto the wafer W.

[0056] The baking chamber 420 heat treats the wafer W. For example, the baking chamber 420 performs a pre-bake process for eliminating organic matter and moisture on the surface of the wafer W by heating the wafer at a preset temperature before applying the photoresist, or a soft bake process (soft bake process) performed after applying the photoresist to the wafer W, and performs a cooling process for cooling the wafer W after the heating process. The baking chamber 420 has a cooling plate 421 and a heating plate 422. The cooling plate 421 is provided with a cooling unit 423 such as cooling water or a thermoelectric element. The heating plate 422 is provided with a heating unit 424 such as a heating wire or a thermoelectric element. The cooling plate 421 and the heating plate 422 can be arranged in one baking chamber 420. Alternatively, some baking chambers may include only the cooling plate 421, and some baking chambers may include only the heating plate 422.

[0057] The development module 402 performs a development process to remove the photoresist by supplying a developer to form a pattern on the wafer W. It also performs thermal treatment processes on the wafer W before and after the development process, such as heating and cooling. The development module 402 includes a development chamber 460, a baking chamber 470, and a transfer chamber 480. The development chamber 460, baking chamber 470, and transfer chamber 480 are arranged sequentially along the second direction 14. Therefore, the development chamber 460 and the baking chamber 470 are spaced apart from each other in the second direction 14, with the transfer chamber 480 interposed between the development chamber 460 and the baking chamber 470. Multiple development chambers 460 may be provided, and multiple development chambers may be provided in each of the first direction 12 and the third direction 16. In the drawings, six development chambers 460 are shown as an example. Multiple baking chambers 470 may be provided in each of the first direction 12 and the third direction 16. In the drawings, six baking chambers 470 are shown as an example. However, a larger number of baking chambers 470 may be provided.

[0058] The transfer chamber 480 is arranged parallel to the second buffer zone 330 of the first buffer module 300 in the first direction 12. A developing robot 482 and a guide rail 483 are located within the transfer chamber 480. The transfer chamber 480 has a generally rectangular shape. The developing robot 482 feeds wafers W between the baking chamber 470, the developing chamber 460, the second buffer zone 330 and the cooling chamber 350 of the first buffer module 300, and the second cooling chamber 540 of the second buffer module 500. The guide rail 483 is arranged so that its length is parallel to the first direction 12. The guide rail 483 guides the developing robot 482, allowing it to move linearly in the first direction 12. The developing robot 482 includes a hand 484, an arm 485, a bracket 486, and a support 487. The hand 484 is fixedly mounted within the arm 485. The arm 485 has a flexible structure, allowing the hand 484 to move horizontally. The bracket 486 is arranged so that its length extends along the third direction 16. The arm 485 is connected to the bracket 486 so as to be linearly movable along the bracket 486 in the third direction 16. The bracket 486 is fixedly connected to the support 487. The support 487 is connected to the guide rail so as to be linearly movable along the guide rail 483.

[0059] The developing chambers 460 have the same structure. However, the types of developer used in the developing chambers 460 may be different. The developing chambers 460 remove the photoresist areas on the wafer W that are exposed to light. Subsequently, the protective film areas that are exposed to light are also removed. Alternatively, depending on the type of photoresist used, only the photoresist and protective film areas that are not exposed to light may be removed.

[0060] The developing chamber 460 has a housing 461, a support plate 462, and a nozzle 463. The housing 461 has the shape of an open-topped cup. The support plate 462 is located in the housing 461 and supports the wafer W. The support plate 462 can be configured to be rotatable. The nozzle 463 supplies developer to the wafer W positioned on the support plate 462. The nozzle 463 can have the shape of a circular tube and can supply developer to the center of the wafer W. Optionally, the nozzle 463 can have a length corresponding to the diameter of the wafer W, and the discharge hole of the nozzle 463 can be a slit. The developing chamber 460 can be further provided with a nozzle 464, which supplies a cleaning solution such as deionized water to clean the surface of the wafer W and also supplies developer to the wafer W.

[0061] The baking chamber 470 heat-treats the wafer W. For example, the baking chamber 470 can perform a post-baking process of heating the wafer W before the development process, a hard baking process of heating the wafer W after the development process, and a cooling process of cooling the heated wafer after the baking process. The baking chamber 470 has a cooling plate 471 and a heating plate 472. The cooling plate 471 is provided with a cooling unit 473 such as cooling water or a thermoelectric element. The heating plate 472 is provided with a heating unit 474 such as a heating wire or a thermoelectric element. The cooling plate 471 and the heating plate 472 can be arranged in one baking chamber 470. Optionally, some baking chambers 470 may include only the cooling plate 471, and some baking chambers 470 may include only the heating plate 472.

[0062] As described above, the coating / developing module 400 is configured such that the coating module 401 and the developing module 402 are separated. When viewed from the top, the coating module 401 and the developing module 402 may have the same chamber arrangement.

[0063] (Second buffer module)

[0064] The second buffer module 500 is provided as a passage for transferring wafers W between the coating / development module 400 and the front / back exposure module 600. The second buffer module 500 performs processes such as a cooling process or an edge exposure process on the wafers W. The second buffer module 500 includes a frame 510, a buffer zone 520, a first cooling chamber 530, a second cooling chamber 540, an edge exposure chamber 550, and a second buffer robot 560. The frame 510 has a rectangular parallelepiped shape. The buffer zone 520, the first cooling chamber 530, the second cooling chamber 540, the edge exposure chamber 550, and the second buffer robot 560 are located within the frame 510. The buffer zone 520, the first cooling chamber 530, and the edge exposure chamber 550 are arranged at a height corresponding to that of the coating module 401. The second cooling chamber 540 is arranged at a height corresponding to that of the development module 402. The buffer zone 520, the first cooling chamber 530, and the second cooling chamber 540 are arranged in a row along the third direction 16. When viewed from the top, the buffer zone is provided along the transfer chamber 430 of the coating module 401 in the first direction 12. The edge exposure chamber 550 is separated from the buffer zone 520 or the first cooling chamber 530 in the second direction 14 by a preset distance.

[0065] The second buffer robot 560 transfers wafers W between the buffer zone 520, the first cooling chamber 530, and the edge exposure chamber 550. The second buffer robot 560 is located between the edge exposure chamber 550 and the buffer zone 520. The second buffer robot 560 may have a structure similar to that of the first buffer robot 360. The first cooling chamber 530 and the edge exposure chamber 550 perform subsequent processes on the wafers, and the coating module 401 has already performed a process on the wafers. The first cooling chamber 530 cools the wafers W, and the coating module 401 has already performed a process on the wafers W. The first cooling chamber 530 has a structure similar to that of the cooling chamber 350 of the first buffer module 300. The edge exposure chamber 550 exposes the edges of the wafers W, and the first cooling chamber 530 has already performed a cooling process on the wafers W. The buffer zone 520 temporarily stores the wafers W before the wafers W are transferred to the pre-processing module 601. The edge exposure chamber 550 has already performed a process on the wafers W, which will be described below. The second cooling chamber 540 cools the wafer W before it is transferred to the development module 402 after the post-processing module 602 has already performed a process on the wafer W, as will be described below. The second buffer module 500 may further include a buffer zone of a height corresponding to that of the development module 402. In this case, the wafer W can be transferred to the development module 402 after being temporarily stored in the increased buffer zone after the post-processing module 602 has already performed a process on the wafer W.

[0066] (Front / rear exposure module)

[0067] When the exposure device 900 performs the immersion / exposure process, the front / rear exposure module 600 may perform a process of applying a protective film that protects the photoresist film applied to the wafer W during the immersion / exposure process. The front / rear exposure module 600 may perform a process of cleaning the wafer W after the exposure process. In addition, when the application process is performed by using a chemically amplified resist, the front / rear exposure module 600 may perform a baking process after the exposure process.

[0068] The front / rear exposure module 600 includes a front processing module 601 and a post-processing module 602. The front processing module 601 performs a process of processing the wafer W before the exposure process, and the post-processing module 602 performs a process of processing the wafer W after the exposure process. The front processing module 601 and the post-processing module 602 can be arranged to be separated from each other at different layers. According to an example, the front processing module 601 is located on the post-processing module 602. The front processing module 601 has the same height as the application module 401. The post-processing module 601 has the same height as the development module 402. The front processing module 601 has a protective film applying chamber 610, a baking chamber 620, and a transfer chamber 630. The protective film applying chamber 610, the baking chamber 620, and the transfer chamber 630 are arranged in sequence along the second direction 14. Therefore, the protective film applying chamber 610 and the baking chamber 620 are separated from each other in the second direction 14 with the transfer chamber 630 interposed between them. Multiple protective film application chambers 610 are provided, and the multiple protective film application chambers 610 are arranged along the third direction 16 to form different layers. Alternatively, multiple protective film application chambers 610 may be provided in each of the first direction 12 and the third direction 16. Multiple baking chambers 620 are provided, and the multiple baking chambers 620 are arranged along the third direction 16 to form different layers. Alternatively, multiple baking chambers 620 may be provided in each of the first direction 12 and the third direction 16.

[0069] The transfer chamber 630 is arranged parallel to the first cooling chamber 530 of the second buffer module 500 in the first direction 12. The pre-processing robot 632 is located in the transfer chamber 630. The transfer chamber 630 has a generally square or rectangular shape. The pre-processing robot 632 feeds the wafer W between the protective film application chamber 610, the baking chamber 620, the buffer zone 520 of the second buffer module 500, and the first buffer zone 720 of the interface module 700, which will be described below. The pre-processing robot 632 has a hand 633, an arm 634, and a bracket 635. The hand 633 is fixedly mounted in the arm 634. The arm 634 has a bendable and rotatable structure. The arm 634 is connected to the bracket 635 so as to be movable linearly along the bracket 635 in the third direction 16.

[0070] During the immersion / exposure process, the protective film application chamber 610 applies a protective film capable of protecting the resist film onto the wafer W. The protective film application chamber 610 includes a housing 611, a support plate 612, and a nozzle 613. The housing 611 is in the shape of a cup with an open top. The support plate 612 is located in the housing 611 and supports the wafer W. The support plate 612 can be configured to be rotatable. The nozzle 613 supplies a protective liquid for forming a protective film on the wafer W located on the support plate 612. The nozzle has the shape of a circular tube and can supply the protective liquid toward the center of the wafer W. Alternatively, the nozzle 613 can have a length corresponding to the diameter of the wafer W, and the discharge hole of the nozzle 613 can be a slit. In this case, the support plate can be configured to be fixed. The protective liquid includes an expandable material. The protective liquid can be a material with low affinity for photoresist and water. For example, the protective liquid can include a fluorine-based solvent. The protective film applying chamber 610 supplies the protective liquid to the center of the wafer W while the wafer W positioned on the support plate 612 is rotated.

[0071] The baking chamber heat treats the wafer W, which is coated with a protective film. The baking chamber 620 includes a cooling plate 621 and a heating plate 622. The cooling plate 621 is provided with a cooling unit 623, such as cooling water or a thermoelectric element. The heating plate 622 is provided with a heating unit 624, such as a heating wire or a thermoelectric element. The heating plate 622 and the cooling plate 621 can be arranged in one baking chamber 620. Alternatively, some baking chambers 620 may only have the heating plate 622, and some baking chambers 620 may only have the cooling plate 621.

[0072] The post-processing module 602 has a cleaning chamber 660, a post-exposure baking chamber 670, and a transfer chamber 680. The cleaning chamber 660, the transfer chamber 680, and the post-exposure baking chamber 670 are arranged in sequence along the second direction 14. Therefore, the cleaning chamber 660 and the post-exposure baking chamber 670 are separated from each other in the second direction 14 with the transfer chamber 680 interposed therebetween. A plurality of cleaning chambers 660 are provided, and the plurality of cleaning chambers 660 are arranged along the third direction 16 to form different layers. Alternatively, a plurality of cleaning chambers 660 may be provided in each of the first direction 12 and the third direction 16. A plurality of post-exposure baking chambers 670 are provided, and the plurality of post-exposure baking chambers 610 are arranged along the third direction 16 to form different layers. Alternatively, a plurality of post-exposure baking chambers 670 may be provided in each of the first direction 12 and the third direction 16.

[0073] When viewed from the top, the transfer chamber 680 is arranged parallel to the second cooling chamber 540 of the second buffer module 500 in the first direction 12. The transfer chamber 680 has a generally square or rectangular shape. A post-processing robot 682 is located in the transfer chamber 680. The post-processing robot 682 transfers wafers W between the cleaning chamber 660, the post-exposure bake chamber 670, the second cooling chamber 540 of the second buffer module 500, and the second buffer zone 730 of the interface module 700, as will be described below. The post-processing robot 682 provided in the post-processing module 602 can have the same structure as the pre-processing robot 632 provided in the pre-processing module 601.

[0074] The cleaning chamber 660 cleans the wafer W after the exposure process. The cleaning chamber 660 has a housing 661, a support plate 662, and a nozzle 663. The housing has the shape of a cup with an open top. The support plate 662 is located in the housing 661 and supports the wafer W. The support plate 662 can be configured to be rotatable. The nozzle 663 supplies a cleaning liquid to the wafer W positioned on the support plate 662. The cleaning liquid can be water, such as deionized water. When the wafer W positioned on the support plate 662 is rotated, the cleaning chamber 660 supplies the cleaning liquid to the center area of the wafer W. Optionally, when the wafer W is rotated, the nozzle 330 can move linearly or rotate from the center area of the wafer W to the edge area of the wafer W.

[0075] After the exposure process, the baking chamber 670 has performed an exposure process on the wafer by using far infrared rays to heat the wafer W. After the exposure process, during the baking process, by enhancing the acid generated by the photoresist during the exposure process, the wafer W is heated to complete the change of the performance of the photoresist. After the exposure process, the baking chamber 670 has a heating plate 672. The heating plate 672 is provided with a heating unit 674 such as a heating wire or a thermoelectric element. After the exposure process, the baking chamber 670 may be further provided with a cooling plate 671 therein. The cooling plate 671 is provided with a cooling unit 673 such as cooling water or a thermoelectric element. Alternatively, a baking chamber only having a cooling plate 671 may be further provided.

[0076] As described above, the front / rear exposure module 600 is configured so that the front processing module 601 and the rear processing module 602 are completely separated from each other. The transfer chamber 630 of the front processing module 601 and the transfer chamber 680 of the rear processing module 602 can have the same size and can completely overlap each other when viewed from the top. The protective film application chamber 610 and the cleaning chamber 660 can have the same size and can completely overlap each other when viewed from the top. The baking chamber 620 and the rear exposure chamber 670 can have the same size and can completely overlap each other when viewed from the top.

[0077] (Interface Module)

[0078] The interface module 700 feeds wafers W between two of the front / rear exposure modules 600, the purge module 800, and the exposure apparatus 900. The interface module 700 includes a frame 710, a first buffer zone 720, a second buffer zone 730, and an interface robot 740. The first buffer zone 720, the second buffer zone 730, and the interface robot 740 are located within the frame 710. The first buffer zone 720 and the second buffer zone 730 are spaced apart by a predetermined distance and can be stacked. The first buffer zone 720 is positioned higher than the second buffer zone 730. The first buffer zone is located at a height corresponding to that of the pre-processing module 601, while the second buffer zone 730 is located at a height corresponding to that of the post-processing module 602. When viewed from the top, the first buffer zone 720, when arranged along the first direction (I2), forms a row with the transfer chamber 630 of the pre-processing module 601. The second buffer zone 730, when arranged along the first direction (I2), forms a row with the transfer chamber 630 of the post-processing module 602.

[0079] The interface robot 740 is positioned to be spaced apart from the first buffer zone 720 and the second buffer zone 730 in the second direction 14. The interface robot 740 transfers the wafer W between two of the first buffer zone 720, the second buffer zone 730, the purge module 800, and the exposure device 900. The interface robot 740 has a structure substantially similar to that of the second buffer robot 560.

[0080] The first buffer zone 720 temporarily stores wafers W after the pre-processing module 601 has performed a process on the wafers W before they are moved to the exposure apparatus 900. The second buffer zone 730 temporarily stores wafers W after the exposure apparatus 900 has completed a process on the wafers W before they are moved to the post-processing module 602. The first buffer zone 720 includes a housing 721 and a plurality of racks 722. The racks 722 are located within the housing 721 and spaced apart from each other along the third direction. A wafer W is positioned on each rack 722. The housing 721 has openings (not shown) on the side where the interface robot 740 is located and on the side where the pre-processing robot 632 is located, allowing the interface robot 740 and the pre-processing robot 632 to bring wafers W into and out of the housing 721. The second buffer zone 730 has a generally similar structure to the first buffer zone 720. However, the housing of the second buffer zone 730 has openings on the side where the interface robot 740 is located and on the side where the post-processing robot 682 is located. When a chamber for performing a process on a wafer is not provided, the interface module may be provided with only the buffer zone and the robot arm as described above.

[0081] (Purge module)

[0082] The purge module 800 may be disposed in the interface module 700. Specifically, the purge module 800 may be disposed at a position opposite to the first buffer zone 720 surrounding the interface robot 740. Alternatively, the purge module 800 may be disposed at a different position, such as at a position at the rear end of the interface module 700 where the exposure device 900 is connected, or at a side of the interface module 700. The purge module 800 performs a gas purge process and a water rinse process, wherein a protective film for protecting the photoresist is applied in the front / rear exposure module 600.

[0083] Controller( Figure 11 1000 ) controls components of the substrate processing apparatus 1000 .

[0084] Figure 5 is a plan view of a resist coating chamber according to an embodiment of the inventive concept. Figure 6 yes Figure 5 Side view of the resist coating chamber.

[0085] refer to Figure 5 and Figure 6 The resist coating chamber 410 includes a substrate supporting member 4100 , a processing liquid supply unit 4300 , and a purge port 4500 .

[0086] The substrate supporting member 4100 supports the substrate W during the execution of a process.

[0087] The substrate supporting member 4100 includes a first substrate supporting member 4100 a and a second substrate supporting member 4100 b .

[0088] Two substrate supporting members, ie, a first substrate supporting member 4100 a and a second substrate supporting member 4100 b are disposed along a moving direction of the nozzle arm 4320 within a housing 4000 provided with a processing space.

[0089] When the process is performed, the substrate support member 4100 is rotated by the driving member 4120. The substrate support member 4100 has a supporting plate 4140 having a circular upper surface, and pin members 4160 for supporting the substrate W are mounted on the upper surface of the supporting plate 4140. When the substrate support member 4100 is rotated by the driving member 4120, the substrate W supported by the pin members 4160 is rotated.

[0090] A container 4200 is located on the circumference of the substrate supporting member 4100. The container 4200 includes a first container 4200a located on the circumference of the first substrate supporting member 4100a and a second container 4200b located on the circumference of the second substrate supporting member 4100b.

[0091] The receiving chamber 4200 may have a generally cylindrical shape. The receiving chamber 4200 includes an upper cup 4210. An exhaust hole is formed below the upper cup 4210. A lower cup 4220 may be provided below the upper cup 4210 and separated from the upper cup 4210 at a preset interval. The lower cup 4220 forms the lower end of the exhaust hole. A connecting hole 4240 connected to the exhaust hole is formed at the lower portion of the receiving chamber 4200, and an exhaust pipe 4260 is installed to communicate with the connecting hole 4240. An exhaust member 4280, such as a pump 4327, is connected to the exhaust pipe 4260, and a negative pressure is provided in the exhaust member 4280 to discharge the processing liquid dispersed due to the rotation of the substrate W and the gas in the receiving chamber containing smoke.

[0092] Figure 7 yes Figure 5 Perspective view of the middle nozzle arm.

[0093] refer to Figures 5 to 7 The processing liquid supply unit 4300 supplies processing liquid to the upper surface of the substrate W positioned on the substrate support member 4100. The processing liquid supply unit 4300 includes a nozzle arm 4320 disposed on one side of the substrate support member 4100. A plurality of nozzles 4321 and 4322 are located at one end of the nozzle arm 4320. The nozzles 4321 and 4322 include a plurality of photosensitive liquid nozzles 4321. The plurality of photosensitive liquid nozzles 4321 may be arranged in a row at one end of the nozzle arm 4320 so as to be perpendicular to the length direction of the nozzle arm 4320.

[0094] The pre-wetting nozzle 4322 may be disposed at one end of the nozzle arm 4320. Before supplying the photosensitive liquid onto the substrate, the pre-wetting nozzle 4322 supplies an organic solvent to the substrate W to improve the wettability of the photosensitive liquid on the substrate W. If the organic solvent is supplied before the photosensitive liquid is supplied onto the substrate W, the photosensitive liquid is evenly spread onto the substrate W, thereby forming a uniform photosensitive film on the substrate W.

[0095] The organic solvent supplied from the pre-wet nozzle 4322 to the substrate W may be thinner or the like.

[0096] Further, the pre-wetting nozzle 4322 may be omitted.

[0097] The nozzle arm 4320 may be provided at one side of the substrate support member 4100 such that an arrangement direction of the nozzles 4321 and 4322 may pass through the center of the substrate positioned on the substrate support member 4100 .

[0098] The nozzle arm 4320, on which a plurality of nozzles 4321 and 4322 are mounted, can be linearly moved along the arrangement direction of the nozzles 4321 and 4322 by the driving member 4400. The driving member 4400 includes a nozzle arm supporting member 4410 and a guide member 4420. The nozzle arm supporting member 4410 is connected to the other end of the nozzle arm 4320. The nozzle arm supporting member 4410 may have a rod shape extending from one side of the nozzle arm 4320 to the lower side. The guide member 4420 is connected to the lower end of the nozzle arm supporting member 4410. The guide member is provided on one side of the substrate supporting member 4100 so as to be perpendicular to the substrate supporting member 4100. Figure 5 The nozzle arm support member 4320 is disposed on a flat surface. The guide member 4420 is positioned along the spacing between the first substrate support member 4100a and the second support member 4100b. The guide member 4420 may have a rail shape and guide the linear movement of the nozzle arm support member 4410. The nozzle arm support member 4410 may be arranged so that its length varies vertically.

[0099] The driving member 4400 having the above configuration allows the processing liquid supply unit 4300 to move linearly between the first substrate supporting member 4100a and the second substrate supporting member 4100b. Therefore, after being moved to the second substrate supporting member 4100b and supplying the photosensitive liquid to the substrate located in the first substrate supporting member 4100a using one of the plurality of photosensitive liquid nozzles 4321, the processing liquid supply unit 4300 can supply the photosensitive liquid to the substrate located in the second substrate supporting member 4100b using one of the plurality of photosensitive liquid nozzles 4321.

[0100] The photosensitive liquid nozzle 4321 that supplies photosensitive liquid to the substrate in the first substrate support member 4100a and the photosensitive liquid nozzle 4321 that supplies photosensitive liquid to the substrate in the second substrate support member 4100b can be the same or different. Furthermore, the substrates can be alternately introduced into the first substrate support member 4100a and the second substrate support member 4100b. The process of supplying photosensitive liquid to the substrates can be repeated as the nozzle arm 4320 moves between the first and second substrate support members 4100a and 4100b.

[0101] The purge port 4500 is located between the first substrate support member 4100a and the second substrate support member 4100b and is arranged so that the nozzle arm 4320 is located below the movement path of the nozzles 4321 and 4322 when the nozzle arm moves between the first substrate support member 4100a and the second substrate support member 4100b.

[0102] Figure 8 A view showing a pipe connected to one of the photosensitive liquid nozzles

[0103] refer to Figure 8 The photosensitive liquid nozzle 4321 is connected to a water tank 4326 via a supply pipe 4325. The water tank stores the photosensitive liquid. A pump 4327 for providing pressure is located in the supply pipe 4325, and the photosensitive liquid flows through the pump 4327. A valve 4328 for opening and closing the supply pipe 4325 may be located in the supply pipe 4325. Multiple photosensitive liquid nozzles 4321 may be connected to the pipe individually. Accordingly, all or some of the multiple photosensitive liquid nozzles 4321 can supply liquids with different compositions to the substrate.

[0104] Depending on the substrate processing apparatus 1, the photosensitive liquid nozzle 4321 may need to be purged from time to time during its use. This may include situations where the photosensitive liquid in the pipeline needs to be drained to remove generated particles, situations where the pipeline needs to be stabilized after the pump 4327, valve 4328, and filter of the pipeline are exchanged, and situations where the pipeline needs to be stabilized after the photosensitive liquid stored in the water tank 4326 is exchanged and the newly exchanged photosensitive liquid is filled throughout the pipeline. The purging operation is performed by draining a preset amount of photosensitive liquid through the nozzle 4321. Depending on the situation, the amount of photosensitive liquid drained may correspond to several volumes of the water tank 4326, and the photosensitive liquid may be drained for several hours or days.

[0105] The substrate treating apparatus according to an embodiment of the inventive concept performs a purging operation while performing a process of supplying a photosensitive liquid to a substrate using the nozzle arm 4320 .

[0106] Figure 9 Block diagram of the process for purge operation. Figure 10 A view showing the state where the photosensitive liquid nozzle is purged to the purge port. Figure 11 A diagram showing some connection relationships of the controller.

[0107] Hereinafter, the case where the purging operation is started when the nozzle arm 4320 moves from the first substrate supporting member 4100a to the second substrate supporting member 4100b will be described as an example. However, the present invention is not limited thereto, but the purging operation is started when the nozzle arm 4320 moves from the first substrate supporting member 4100a to the second substrate supporting member 4100b.

[0108] Reference Figures 9 to 11 , the controller 1000 controls the components of the substrate processing apparatus 10 to perform the purge operation as follows.

[0109] The nozzle arm 4320 is positioned above the first substrate supporting member 4100a and supplies photosensitive liquid to the substrate from one of the plurality of photosensitive liquid nozzles 4321. If a preset amount of photosensitive liquid is completely supplied, the nozzle arm 4320 moves toward the second substrate supporting member 4100b.

[0110] If the nozzle arm 4320 moves toward the second substrate support member 4100b and is aligned perpendicularly to the purge port 4500, a photosensitive liquid nozzle 4321a (hereinafter, the purge nozzle) that is to perform the purge operation among the plurality of photosensitive liquid nozzles 4321 performs the purge operation by discharging a preset amount of photosensitive liquid into the purge port 4500 (S10). While the purge nozzle 4321a performs the purge operation, the nozzle arm 4320 may temporarily stop above the purge port 4500. Furthermore, while the purge nozzle 4321a performs the purge operation, the nozzle arm 4320 may move toward the second substrate support member 4100b at a preset speed. While the nozzle arm 4320 moves from the first substrate support member 4100a to the second substrate support member 4100b, the purge operation of the purge nozzle 4321a is performed, and the movement of the nozzle arm 4320 from the first substrate support member 4100a to the second substrate support member 4100b hardly affects the operation of processing the substrate.

[0111] If the nozzle arm 4320 is positioned above the second substrate support member 4100b, one of the plurality of photosensitive liquid nozzles 4321 supplies photosensitive liquid to the substrate. Subsequently, the photosensitive liquid nozzle 4321 supplying the photosensitive liquid may be the same as or different from the photosensitive liquid nozzle 4321 that supplied the photosensitive liquid from the substrate support member 4100a immediately before. However, the purge nozzle 4321a discharges from the photosensitive liquid nozzle 4321 that supplied the photosensitive liquid. Therefore, if it is confirmed that the photosensitive liquid nozzle 4321 supplying the photosensitive liquid to the second substrate support member 4100b is the same as the purge nozzle 4321a, the controller 1000 performs an interlock operation. For example, if it is confirmed that the photosensitive liquid nozzle 4321 that will supply the photosensitive liquid to the second substrate support member 4100b is the same as the purge nozzle 4321a, the controller 1000 may generate an alarm through the alarm generating unit 1200. Furthermore, if it is confirmed that the photosensitive liquid nozzle 4321 that will supply the photosensitive liquid to the second substrate support member 4100b is the same as the purge nozzle 4321a, the controller 1000 may stop the introduction of the substrate into the second substrate support member 4100b. Furthermore, if it is confirmed that the photosensitive liquid nozzle 4321 that will supply the photosensitive liquid to the second substrate support member 4100b is the same as the purge nozzle 4321a, the controller 1000 may stop the removal of the substrate that was scheduled to be carried from the cartridge to the second substrate support member 4100b. Once the preset amount of photosensitive liquid has been fully supplied, the nozzle arm 4320 moves toward the first substrate support member 4100a.

[0112] If the nozzle arm 4320 moves toward the first substrate supporting member 4100a and is arranged perpendicular to the purge port 4500, the purge module 4321a performs a purge operation by discharging a preset amount of photosensitive liquid into the purge port 4500. While the purge nozzle 4321a performs the purge operation, the nozzle arm 4320 may be temporarily stopped above the purge port 4500. Furthermore, while the purge nozzle 4321a performs the purge operation, the nozzle arm 4320 may be moved toward the first substrate supporting member 4100a at a preset speed.

[0113] If the nozzle arm 4320 is positioned above the first substrate support member 4100a, one of the plurality of photosensitive liquid nozzles 4321 supplies photosensitive liquid to the substrate. Subsequently, the photosensitive liquid nozzle 4321 supplying the photosensitive liquid may be the same as or different from the photosensitive liquid nozzle 4321 that just supplied the photosensitive liquid from the second substrate support member 4100b. The purge nozzle 4321a is excluded from the photosensitive liquid nozzles 4321 supplying the photosensitive liquid. Therefore, if it is confirmed that the photosensitive liquid nozzle 4321 supplying the photosensitive liquid to the first substrate support member 4100a is the same as the purge nozzle 4321a, the controller 1000 may generate an alarm via the alarm generating unit 1200. Furthermore, if it is confirmed that the photosensitive liquid nozzle 4321 supplying the photosensitive liquid to the first substrate support member 4100a is the same as the purge nozzle 4321a, the controller 1000 may stop the introduction of the substrate into the first substrate support member 4100a. Further, if it is confirmed that the photosensitive liquid nozzle 4321 that will supply the photosensitive liquid to the first substrate supporting member 4100a is the same as the purge nozzle 4321a, the controller 1000 may stop taking out the substrate scheduled to be carried from the cartridge into the first substrate supporting member 4100a.

[0114] Thereafter, when the nozzle arm 4320 supplies the photosensitive liquid to the substrate while moving the nozzle arm 4320 between the first substrate supporting member 4100a and the second substrate supporting member 4100b, the purge nozzle 4321a repeatedly performs the purge operation (S20). The purge nozzle 4321a repeats the purge operation a preset number of times until the amount of photosensitive liquid discharged from the purge nozzle 4321a reaches a preset amount. The number of times can be set or adjusted in a manner such that the operator inputs the number of times through the input unit 1200. Furthermore, the preset number of times can be set differently depending on the type of purge operation started, such as a purge operation after exchanging pipes, a purge operation after exchanging photosensitive liquids, and a purge operation for removing particles.

[0115] Figure 12 It is a view showing a state of cleaning the purge nozzle.

[0116] Reference Figure 12The purge port may be provided with a cleaner 4510. The cleaner 4510 may supply cleaning liquid to the nozzles 4321 and 4322 to clean the nozzles 4321 and 4322.

[0117] If the purge nozzle 4321a purges the photosensitive liquid a preset number of times, the purge port 4500 cleans the purge nozzle while the nozzle arm 4320 is moved from one of the first and second substrate supporting members 4100a and 4100b to the other (S30).

[0118] In the above example, the case where the purging operation of the purging nozzle 4321a is continuously performed while the nozzle arm 4320 is moved between the first substrate support member 4100a and the second substrate support member 4100b has been described. However, the purging operation of the purging nozzle 4321a may be performed intermittently. If it is necessary to move the nozzle arm 4320 without any time delay by the purging operation of the purging nozzle 4321a, for example, to completely and quickly bring a substrate into the substrate support member 4100 located in the direction of movement of the substrate, even after the purging operation has started, the nozzle arm 4320 may be moved to the next substrate support member 4100 without any purging operation of the purging nozzle 4321a. Furthermore, the purging nozzle 4321a may be performing the purging operation while the nozzle arm 4320 is being moved to the next substrate support member 4100.

[0119] According to an embodiment of the present inventive concept, the substrate processing apparatus 10b may perform an operation of purging the photosensitive liquid nozzle 4321 while the processing liquid supply unit 4300 performs a process of supplying the photosensitive liquid to the substrate. Accordingly, since the operation of purging the photosensitive liquid nozzle 4321 is performed while the substrate processing apparatus performs a process, productivity may be improved.

[0120] Furthermore, the operation of purging two or more photosensitive liquid nozzles 4321 can be performed simultaneously. Specifically, the substrate processing apparatus simultaneously performs the purging operation on the first purging nozzle and the second purging nozzle. During the process of moving the nozzle arm 4320 from one of the first substrate supporting member 4100a and the second substrate supporting member 4100b to the other of the first substrate supporting member 4100a and the second substrate supporting member 4100b, the controller 1000 can control the first purging nozzle to purge the photosensitive liquid in the purge port 4500. Thereafter, even before the operation of purging the first nozzle is completed, the controller starts the operation of purging the second purging nozzle. During the process of moving the nozzle arm 4320 from one of the first substrate supporting member 4100a and the second substrate supporting member 4100b to the other of the first substrate supporting member 4100a and the second substrate supporting member 4100b, the controller 1000 can control the second purging nozzle to purge the photosensitive liquid in the purge port 4500. Further, even after the operation of purging the second purge nozzle is started, the operation of purging the first purge nozzle may be performed again. When the purge operation is performed on the two purge nozzles, the controller 100 may allow the operation of purging the first purge nozzle or the second purge nozzle to be completed first, regardless of the start order of the purge operations.

[0121] According to an embodiment of the inventive concept, a substrate processing apparatus and a substrate processing method are provided for efficiently processing a substrate.

[0122] Further, according to embodiments of the inventive concept, a substrate processing apparatus and a substrate processing method are provided, which can perform a purge operation in the case of processing a substrate.

[0123] The above description illustrates the inventive concept. In addition, the above content describes typical embodiments of the inventive concept, and the inventive concept can be used in different other combinations, transformations, and environments. That is, the inventive concept can be modified and corrected without departing from the scope of the inventive concept disclosed in the specification, the scope of equivalence to the written disclosure, and / or the technology or knowledge of those skilled in the art. The written embodiments describe the best state of the technical spirit for implementing the inventive concept, and various necessary changes can be made in the specific application fields and purposes of the inventive concept. Therefore, the detailed description of the inventive concept is not intended to limit the inventive concept in the disclosed embodiment state. In addition, it should be interpreted that the attached claims include other embodiments.

Claims

1. A substrate processing method using a substrate processing device, the substrate processing device comprising: a first substrate supporting member, the first substrate supporting member being configured to support a substrate; a second substrate supporting member, the second substrate supporting member being configured to support a substrate; a nozzle arm that moves between the first substrate support member and the second substrate support member and has a plurality of nozzles mounted thereon; as well as a purge port positioned in a movement path of the nozzle arm moving between the first substrate support member and the second substrate support member, and The substrate processing method comprises: processing the substrate by discharging a processing liquid from any one of the plurality of nozzles toward the substrate, the substrate being supported by the first substrate supporting member or the second substrate supporting member; and performing a purge operation by discharging the processing liquid from a purge nozzle that is one of the plurality of nozzles toward the purge port, and after the one of the plurality of nozzles discharges the processing liquid toward the substrate supported by the first substrate supporting member, the nozzle arm is moved to the second substrate supporting member; The purge nozzle is a nozzle among the nozzles excluding the nozzle that discharges the processing liquid toward the substrate supported by the second substrate supporting member immediately after the nozzle arm moves from the first substrate supporting member to the second substrate supporting member.

2. The substrate processing method according to claim 1, wherein: The purge port is positioned between the first substrate support member and the second substrate support member.

3. The substrate processing method according to claim 1, wherein: The purging operation of the purging nozzle is performed while the nozzle arm moves at a preset speed.

4. The substrate processing method according to claim 1, wherein: While the purge nozzle performs the purge operation, the nozzle arm temporarily stops.

5. The substrate processing method according to claim 1, wherein: The purging operation of the purging nozzle is performed a preset number of times from the same purging nozzle during the plurality of movements of the nozzle arm between the first substrate supporting member and the second substrate supporting member.

6. The substrate processing method according to claim 5, wherein: After the purge nozzle performs the purge operation a preset number of times, the purge nozzle is cleaned in the purge port.

7. The substrate processing method according to claim 5, wherein: If it is confirmed that the nozzle that discharges the processing liquid onto the substrate supported by the first substrate supporting member or the second substrate supporting member after the purging operation of the purging nozzle starts and before the purging operation is performed a preset number of times is the purging nozzle, an interlock operation is performed.

8. The substrate processing method according to claim 5, wherein: If it is confirmed that the nozzle that discharges the processing liquid onto the substrate supported by the first substrate supporting member or the second substrate supporting member after the purging operation of the purging nozzle starts and before the purging operation is performed a preset number of times is the purging nozzle, an alarm is generated.

9. The substrate processing method according to claim 5, wherein: If it is confirmed that the nozzle that discharges the processing liquid onto the substrate supported by the first substrate supporting member or the second substrate supporting member after the purging operation of the purging nozzle starts and before the purging operation is performed a preset number of times is the purging nozzle, the substrate is stopped from being taken out of the card box storing the substrate.

10. The substrate processing method according to claim 5, wherein: If it is confirmed that the nozzle that discharges the processing liquid onto the substrate supported by the first substrate supporting member or the second substrate supporting member after the purging operation of the purging nozzle starts and before the purging operation is performed a preset number of times is the purging nozzle, the substrate is stopped from being brought into the substrate supporting member of the first substrate supporting member or the second substrate supporting member expected to be used by the purging nozzle.

11. The substrate processing method according to claim 5, wherein: The purging operations performed a preset number of times are respectively performed according to the continuous movement of the nozzle arm between the first substrate supporting member and the second substrate supporting member.

12. The substrate processing method according to claim 5, wherein: The purging operation performed a preset number of times is intermittently performed according to continuous movement of the nozzle arm between the first substrate supporting member and the second substrate supporting member.

13. The substrate processing method according to claim 1, wherein: A plurality of the purging nozzles are provided to simultaneously perform the purging operation.

14. The substrate processing method according to claim 1, wherein: The processing liquid is photoresist.

15. A substrate processing device, comprising: a first substrate supporting member, the first substrate supporting member supporting a substrate; a second substrate supporting member, the second substrate supporting member supporting the substrate; a processing liquid supply unit having a nozzle arm and a plurality of nozzles, the nozzle arm moving between the first substrate supporting member and the second substrate supporting member, the plurality of nozzles being mounted on the nozzle arm; as well as a purge port positioned in a movement path of the nozzle arm moving between the first substrate support member and the second substrate support member, and a controller for controlling the first substrate supporting member, the second substrate supporting member, and the processing liquid supply unit, and wherein the controller controls the processing liquid supply unit to discharge the processing liquid toward the substrate supported by one of the first substrate supporting member or the second substrate supporting member, and then discharge the processing liquid from the purge nozzle, which is one of the plurality of nozzles, when the nozzle arm moves to the other of the first substrate supporting member or the second substrate supporting member; The purge nozzle is a nozzle among the nozzles excluding the nozzle that discharges the processing liquid toward the substrate supported by the second substrate supporting member immediately after the nozzle arm moves from the first substrate supporting member to the second substrate supporting member.

16. The substrate processing apparatus according to claim 15, wherein The first substrate support member, the purge port, and the second substrate support member are aligned in a row, and The nozzle arm moves in a direction in which the first substrate supporting member, the purge port, and the second substrate supporting member are aligned.

17. The substrate processing apparatus according to claim 15, wherein: A cleaner for cleaning the purge nozzle is provided at the purge port.

18. The substrate processing apparatus according to claim 15, wherein The controller controls the processing liquid supply unit so that the nozzles of the purge port performing the purge operation are nozzles other than the nozzles discharging the processing liquid toward the substrate supported by the first substrate supporting member or the second substrate supporting member immediately after the purge operation.

19. The substrate processing apparatus according to claim 15, wherein: The controller controls the processing liquid supply unit so that the purging operation of the purging nozzle is performed a preset number of times from the same purging nozzle during the plurality of movements of the nozzle arm between the first substrate supporting member and the second substrate supporting member.

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