Device, system, mobile body, and substrate

Abstract

The present disclosure relates to a device, a system, a mobile body, and a substrate. The device includes: a pixel array including a plurality of pixels, a first pixel and a second pixel of the plurality of pixels corresponding to different colors, and a first pixel and a third pixel of the plurality of pixels corresponding to the same color; a first circuit group connected to the first pixel; a third circuit group connected to the third pixel; and a first circuit, a second circuit included in the first circuit group, and a third circuit included in the third circuit group and having the same function as the first circuit. In a top view, the third circuit is disposed between the first circuit and the second circuit.

Description

Technical Field

[0001] Aspects of embodiments relate to an apparatus, and a system, a moving body, and a substrate that all include the apparatus. Background Art

[0002] Japanese Patent Application Laid-Open No. 2016-92791 discusses a solid-state image capturing device in which a signal line is provided for each pixel column, and signals of the signal lines of odd-numbered columns are read out by a column circuit disposed below a pixel array and signals of the signal lines of even-numbered columns are read out by a column circuit disposed above the pixel array.

[0003] In the solid-state image capturing device discussed in Japanese Patent Application Laid-Open No. 2016-92791, image quality degradation is caused by characteristic differences between pixel columns / pixel rows caused by element process variations, temperature distribution in the chip, power resistors, etc., color mixing, power supply variations, and interference between digital signal transmission and analog circuits. Summary of the Invention

[0004] According to one aspect of an embodiment, an apparatus includes: a pixel array including a plurality of pixels corresponding to the same color, the plurality of pixels including a first signal line, a second signal line, a third signal line, and a fourth signal line, the first signal line being connected to a first circuit group, the second signal line being connected to a second circuit group, the third signal line being connected to a third circuit group, and the fourth signal line being connected to a fourth circuit group; and a first circuit included in the first circuit group, a second circuit included in the second circuit group and having the same function as the first circuit, a third circuit included in the third circuit group and having the same function as the first circuit, and a fourth circuit included in the fourth circuit group and having the same function as the first circuit, the first circuit, the second circuit, the third circuit, and the fourth circuit being arranged in multiple rows and multiple columns.

[0005] According to another aspect of an embodiment, an apparatus includes: a pixel array including a plurality of pixels, a first pixel and a second pixel among the plurality of pixels being arranged side by side in a first direction and corresponding to different colors, the first pixel and the second pixel being connected to different signal lines; a first circuit group connected to the first pixel; a second circuit group connected to the second pixel; and a first circuit, a second circuit included in the first circuit group, and a third circuit included in the second circuit group and having the same function as the first circuit, in a top view, the second circuit being disposed between the first circuit and the third circuit.

[0006] According to yet another aspect of an embodiment, a device includes: a pixel array including a plurality of pixels; a first circuit group connected to a first pixel; and a second circuit group connected to a second pixel, wherein both the first circuit group and the second circuit group include a comparator, a first memory that holds a signal corresponding to an output of the comparator, and a second memory that acquires an output of the first memory, and wherein at least a part of the second circuit group is arranged between the first memory and the second memory of the first circuit group.

[0007] Other features of the present disclosure will become apparent from the following description of exemplary embodiments with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 is a schematic diagram of a photoelectric conversion device according to a first exemplary embodiment.

[0009] Figure 2 is a schematic diagram of a photoelectric conversion device according to a first exemplary embodiment.

[0010] Figure 3 is a schematic diagram of a photoelectric conversion device according to a first exemplary embodiment.

[0011] Figure 4 is a schematic diagram of a photoelectric conversion device according to a first exemplary embodiment.

[0012] Figure 5 is a schematic diagram of a comparative example of a photoelectric conversion device according to a first exemplary embodiment.

[0013] Figure 6 is a schematic diagram of a photoelectric conversion device according to a second exemplary embodiment.

[0014] Figure 7 is a schematic diagram of a photoelectric conversion device according to a third exemplary embodiment.

[0015] Figure 8 is a schematic diagram of a photoelectric conversion device according to a fourth exemplary embodiment.

[0016] Figure 9 is a schematic diagram of a photoelectric conversion device according to a fifth exemplary embodiment.

[0017] Figure 10 is a schematic diagram of a photoelectric conversion device according to a sixth exemplary embodiment.

[0018] Figure 11 is a diagram showing a configuration of a photoelectric conversion system according to a seventh exemplary embodiment.

[0019] Figure 12A and Figure 12BThis is a diagram showing the configuration and operation of a mobile body according to an eighth exemplary embodiment. Detailed Description

[0020] Some exemplary embodiments will be described below with reference to the accompanying drawings.

[0021] In each of the exemplary embodiments described below, the image capturing device is mainly described as an example of a photoelectric conversion device. However, the exemplary embodiments are applicable to other examples of photoelectric conversion devices and are not limited to image capturing devices. Examples of other devices include a distance measuring device (a device for distance measurement using focus detection or time-of-flight (TOF)) and a photometric device (a device for measuring the amount of incident light).

[0022] The first exemplary embodiment will be described. Figures 1 to 4 This is a schematic diagram of a photoelectric conversion device according to the first exemplary embodiment.

[0023] Figure 1 The photoelectric conversion device shown in includes pixels 10, a pixel array 20, signal lines 30, signal lines 31, current sources 40, current sources 41, ramp signal generation circuits 50, ramp signal generation circuits 51, comparators 60, and comparators 61. The photoelectric conversion device also includes first memories 70, first memories 71, second memories 80, second memories 81, counters 90, counters 91, output circuits 100, and output circuits 101.

[0024] In the pixel array 20, a plurality of pixels 10 are arranged in multiple rows and multiple columns in an array. The pixels 10 include red pixels R, green pixels G, and blue pixels B. Each pixel includes, for example, a color filter corresponding to the wavelength band of visible light of a specific color among red, green, and blue on its light incident side, and is thus associated with any one of the colors. In other words, the pixels corresponding to the same color overlap in the peak wavelength of the color filter. Here, color separation by a color filter is described as an example; however, the color separation method is not limited to a color filter.

[0025] In the column direction ( Figure 1 the vertical direction in ), signal lines extending in the column direction are arranged in the respective columns of the pixel array 20. Each signal line is connected to the pixels 10 arranged in the column direction and serves as a common signal line for these pixels 10.

[0026] The number of pixels 10 included in the pixel array 20 is not particularly limited. For example, the pixel array 20 may include pixels 10 arranged in thousands of rows by thousands of columns like a normal digital camera, or may include a plurality of pixels 10 arranged in a single row.

[0027] The pixel signal read out from the corresponding pixel 10 is input to the signal processing circuit through signal line 30 or signal line 31. The signal processing circuit is a circuit group including comparators 60 and 61 and memories 70, 71, 80, and 81. Each of comparators 60 and 61 compares the pixel signal read out from pixel 10 with a reference signal output from the ramp signal generation circuit. Memories 70, 71, 80, and 81 hold signals. The pixel signals are output sequentially for each column via the signal processing circuit.

[0028] (Configuration of pixels)

[0029] Describe the configuration of each pixel 10 according to this exemplary embodiment.

[0030] Figure 2 An example of the equivalent circuit of each pixel 10 is shown.

[0031] Each pixel 10 includes a photodiode 400, a transfer transistor 410, a floating diffusion section 420, and a source follower transistor 430. Each pixel 10 further includes a selection transistor 440, a ground (GND) node 450, a reset transistor 455, and a power supply node 460.

[0032] The GND node is connected to the ground having a ground potential. Hereinafter, the ground is also referred to as GND.

[0033] The photodiode 400 is grounded at the GND node 450. The photodiode 400 is connected to the transfer transistor 410. The gate of the transfer transistor 410 receives a control signal from the corresponding control signal line Tx. The transfer transistor 410 includes a node common to the gates of the reset transistor 455 and the source follower transistor 430, and this common node serves as the floating diffusion section 420. Both the reset transistor 455 and the source follower transistor 430 are connected to the power supply node 460. The gate of the reset transistor 455 receives a reset signal from the corresponding reset signal line RES. The source follower transistor 430 is connected to the selection transistor 440, and the gate of the selection transistor 440 receives a selection signal from the corresponding selection signal line SEL. The selection transistor 440 is connected to the corresponding signal line 30.

[0034] (Functions of components)

[0035] The functions of each component of the photoelectric conversion device according to this exemplary embodiment will be described.

[0036] The photodiode 400 photoelectrically converts incident light to generate charges.

[0037] The charge photoelectrically converted by the photodiode 400 is transferred to the floating diffusion section 420 via the transfer transistor 410, and is converted into a signal voltage by the capacitor attached to the floating diffusion section 420. The signal voltage is input to the gate of the source follower transistor 430, and is output to the corresponding signal line 30 via the selection transistor 440.

[0038] In Figure 1 , the source follower transistor 430 and the corresponding current source 40 form a source follower, and the signal voltage on the floating diffusion section 420 is buffered by the source follower and output to the corresponding signal line 30.

[0039] Each comparator 60 compares the signal on the corresponding signal line 30 with the ramp signal output from the ramp signal generation circuit 50. At the timing when the output of the comparator 60 is inverted, the corresponding first memory 70 obtains a count signal from the counter 90. As a result, the signal based on the charge generated by the pixel 10 is converted from an analog signal to a digital signal. The digital signal held in each first memory 70 is transferred to the corresponding second memory 80, and then output to the outside of the chip.

[0040] In the present exemplary embodiment, an example of using the common counters 90 and 91 for a plurality of circuits is shown; however, a configuration in which a common count clock is supplied to each signal processing circuit and a counter is deployed for each circuit corresponding to the signal line is also common. The exemplary embodiment of the present disclosure is applicable to such a configuration.

[0041] Figure 3 An example of the specific circuit configuration of each current source 40 is shown.

[0042] Figure 3 The current source shown in

[0043] includes a current source transistor 140, a cascode transistor 150, and a switching transistor 160. The current source transistor 140 is grounded and connected to the cascode transistor 150. The cascode transistor 150 is connected to the switching transistor 160, and the switching transistor 160 is connected to the corresponding signal line 30.

[0044] The current source transistor 140 supplies a current corresponding to the gate voltage to the corresponding signal line 30 via the cascode transistor 150 and the switching transistor 160.

[0045] The switching transistor 160 is turned off to save power to reduce the power.

[0046] A circuit similar to the circuit of each current source 40 can be used in each current source 41 that supplies current to the signal line 31.

[0047] Figure 4 An example of the layout of the current source 40 and the current source 41 is shown.

[0048] In the following description, the row on the lower side in the drawing is regarded as the first row, and the column on the left side is regarded as the first column. This also applies to the following exemplary embodiments. In addition, Figure 5 A comparative example of the layout is shown.

[0049] In Figure 5 , the signal of the signal line 30 corresponding to the odd column is read out to the lower side of the pixel array 20, and the signal of the signal line 31 corresponding to the even column is read out to the upper side of the pixel array 20, as in Japanese Patent Application Laid-Open No. 2016-92791. In the case of a Bayer color filter array, as Figure 5 shown in

[0050] , when the signal of the red pixel is read out via the signal line 30, the signal of the green pixel is read out via the signal line 31.

[0051] In contrast, in the photoelectric conversion device according to the present exemplary embodiment shown in Figure 4 , three types of transistors connected to one signal line 30 and three types of transistors connected to another signal line 30 are arranged such that transistors having the same function are adjacent to each other in the column direction. At this time, the transistors are still arranged one-dimensionally in the row direction. In this arrangement, the elements can be arranged closely while making the centroid positions of the elements closer to each other. As a result, process variations of the elements, temperature differences, differences in power resistors, etc. are reduced to uniformize the characteristics of the elements, which makes it possible to suppress the differences between columns of the same color.

[0052] Note that transistors having the same function indicate that the transistors have the same connection relationship. For example, when the gates of two transistors are connected to a common control line, one of the source and drain of each of the two transistors is connected to the corresponding signal line, and the other in each transistor is supplied with a common bias, the two transistors have the same function. Transistors having the same function have the same size.

[0053] As described above, in the present exemplary embodiment, degradation of image quality caused by characteristic differences between pixel columns can be suppressed.

[0054] In the present exemplary embodiment, an example has been described in which the switching transistor 160, the cascode transistor 150, and the current source transistor 140 are adjacent to each other in the column direction. However, the present disclosure is not limited thereto, and only a part of the three types of transistors included in the current source may be adjacent to each other in the column direction.

[0055] In Figure 4 the three types of transistors connected to one signal line 30 and the three types of transistors connected to the other signal line 30 are alternately arranged; however, this arrangement is not limited thereto as long as the transistors having the same function are adjacent to each other. For example, the switching transistor 160 and the cascode transistor 150 connected to one signal line 30 may be arranged between the switching transistor 160 and the cascode transistor 150 connected to the other signal line 30.

[0056] At this time, elements that may cause more characteristic differences can be adjacent to each other in the column direction.

[0057] For example, the switching transistor 160 may be arranged in a manner similar to the arrangement in Figure 5 while the cascode transistor 150 and the current source transistor 140 may be adjacent in the column direction.

[0058] In addition, each of the current sources 40 and 41 is not limited to the example shown in Figure 3 Each of the current sources 40 and 41 may include, for example, a sample and hold circuit that holds the voltage at the gate of the current source transistor 140.

[0059] In the present exemplary embodiment, an example has been described in which the transistors included in the current sources 40 and 41 are arranged adjacent to each other in the column direction; however, a circuit having elements arranged in this manner is not limited to the current source. For example, the elements included in the comparators 60 and 61 may be arranged in the same manner. The elements are, for example, transistors. In addition, the first memories 70, 71, the second memories 80, and 81 may be arranged in a one-dimensional manner, while the current sources 40, 41, the comparators 60, and 61 may be arranged in a two-dimensional array in multiple rows and multiple columns.

[0060] A second exemplary embodiment will be described. Figure 6 is a schematic diagram of a photoelectric conversion device according to the second exemplary embodiment. Hereinafter, the description common to the first exemplary embodiment will be omitted, and the differences from Figure 4 will be mainly described.

[0061] In Figure 6In the photoelectric conversion device shown in the figure, in the pixel array 20, one pixel column includes two signal lines. The signal line 30 and the signal line 32 correspond to odd-numbered columns, and the signal line 31 and the signal line 33 correspond to even-numbered columns.

[0062] The signal line 30 is used to read out the signals of the pixels in the odd-numbered columns and odd-numbered rows to the lower side of the pixel array 20. The signal line 31 is used to read out the signals of the pixels in the even-numbered columns and even-numbered rows to the lower side of the pixel array 20. The signal line 32 is used to read out the signals of the pixels in the even-numbered columns and even-numbered rows to the upper side of the pixel array 20. The signal line 33 is used to read out the signals of the pixels in the odd-numbered columns and odd-numbered rows to the upper side of the pixel array 20.

[0063] In the case of the Bayer color filter array, when the signal of the red pixel is read out via the signal line 30, the signal of the blue pixel is read out via the signal line 31. As described above, in this exemplary embodiment, different from the first exemplary embodiment, the signals of the pixels read out to the lower side of the pixel array 20 at the same time correspond to two different colors. The signal read out via the signal line 30 is input to the comparator 60, and the signal read out via the signal line 31 is input to the comparator 61.

[0064] At this time, when the comparators that convert the read-out signal from an analog signal to a digital signal are arranged adjacent to each other, when the output of the comparator changes, the outputs of the comparators may interfere with each other, which may cause color mixing.

[0065] Therefore, in Figure 6 In the photoelectric conversion device shown in the figure, the comparator 60 and the comparator 61 are arranged separately so that in the top view, the comparator 60 and the comparator 61 are not adjacent to each other and the comparators and current sources are arranged alternately in each column. In other words, in the top view, the comparator 60 is arranged between the current source 40 and the current source 41, and the comparator 61 is arranged in the subsequent stage of the current source. This arrangement makes it possible to suppress the occurrence of color mixing caused by the mutual interference of the outputs of the comparator 60 and the comparator 61 when the outputs of the comparator 60 and the comparator 61 change. Note that the top view used herein indicates an overview of the light incident surface of the semiconductor substrate.

[0066] In addition, compared with the case where the current source 40 and the current source 41 are arranged closely without shifting in the column direction, the current source 40 or the current source 41 for reading out the signals corresponding to the same color can be arranged more closely. In other words, the regions of the current source corresponding to the odd-numbered columns and the regions of the current source corresponding to the even-numbered columns can be arranged separately. This also applies to the arrangement of the comparator 60 and the comparator 61. This arrangement makes it possible to suppress the deterioration of the image quality caused by the characteristic differences between the pixel columns of the same color.

[0067] As described above, in the present exemplary embodiment, it is possible to suppress the deterioration of image quality caused by the appearance of color mixing and the characteristic differences between pixel columns of the same color.

[0068] A third exemplary embodiment will be described. Figure 7 is a schematic diagram of a photoelectric conversion device according to the third exemplary embodiment. Hereinafter, descriptions common to the first and second exemplary embodiments will be omitted, and differences from Figure 6 will be mainly described.

[0069] Figure 7 The photoelectric conversion device shown in

[0070] has a stacked layer structure and includes a pixel substrate 200 and a circuit substrate 210. The pixel substrate 200 includes a pixel array 20, and current sources 40, 41, 42, and 43 and comparators 60, 61, 62, and 63 are provided on the circuit substrate 210. In addition, signal lines 30, 31, 32, and 33 of the pixel substrate 200 are connected to the current sources 40, 41, 42, and 43 on the circuit substrate 210 by substrate connectors 220, 230, 240, and 250. Figure 6 In the element arrangement in

[0071] according to the second exemplary embodiment, the distance from the pixel array 20 to each current source 40 is different from the distance from the pixel array 20 to each current source 41. Therefore, the length of each signal line 31 is longer than the length of each signal line 30. As a result, the parasitic capacitance attached to each signal line 31 is larger than the parasitic capacitance attached to each signal line 30, which may cause deterioration of image quality and deterioration of operation speed.

[0072] Therefore, in the present exemplary embodiment, by forming the photoelectric conversion device into a stacked layer structure, the lengths and parasitic capacitances of the signal lines in the case where the current sources 40 and 41 are separately arranged are made uniform between columns.

[0073] A fourth exemplary embodiment will be described. Figure 8 is a schematic diagram of a photoelectric conversion device according to the fourth exemplary embodiment. Hereinafter, descriptions common to the first to third exemplary embodiments will be omitted, and differences from Figure 4 will be mainly described.

[0074] In Figure 8In the photoelectric conversion device shown in the figure, the pixels arranged in one column of the pixel array 20 include eight signal lines. Compared with the first exemplary embodiment, the number of signal lines 30 for reading the signals of the red pixels in the even columns and odd rows is increased to four. In addition, the number of signal lines 31 for reading the signals of the blue pixels in the odd columns and even rows is also increased to four. Therefore, four current sources are arranged for one pixel column.

[0075] In the present exemplary embodiment, the four switching transistors 160, the four cascode transistors 150, and the four current source transistors 140 that form the four current sources 40 are each arranged in a two-dimensional array on multiple rows and multiple columns. Similarly, the four switching transistors 161, the four cascode transistors 151, and the four current source transistors 141 that form the four current sources 41 are each arranged in a two-dimensional array on multiple rows and multiple columns.

[0076] For example, the four signal lines 30 are divided into signal line 30(a), signal line 30(b), signal line 30(c), and signal line 30(d), and the current sources and their elements arranged on each line are distinguished by the corresponding letters (a) to (d). In signal line 30(a), switching transistor 160(a), cascode transistor 150(a), and current source transistor 140(a) are arranged. The elements of signal lines 30(b) to 30(d) are arranged in a similar manner.

[0077] These transistors are arranged in a two-dimensional array such that the elements with the same function in each column are grouped together.

[0078] The specific arrangement is as follows. First, in a top view, switching transistor 160(a), switching transistor 160(c), cascode transistor 150(a), cascode transistor 150(c), current source transistor 140(a), and current source transistor 160(c) are arranged in sequence in the column direction. The elements of signal lines 30(b) and 30(d) are arranged in a similar manner. More specifically, in a top view, switching transistor 160(b), switching transistor 160(d), cascode transistor 150(b), cascode transistor 150(d), current source transistor 140(b), and current source transistor 140(d) are arranged in sequence in the column direction.

[0079] At this time, in the row direction, switching transistor 160(a) and switching transistor 160(c) are adjacent to switching transistor 160(b) and switching transistor 160(d) respectively. The same is true for the cascode transistors 150 and the current source transistors 140.

[0080] In other words, with regard to the four switching transistors 160, the switching transistors 160(a) and 160(c) are adjacent to each other in the column direction, and the switching transistors 160(a) and 160(b) are adjacent to each other in the row direction. The four switching transistors 160 are arranged in a two-dimensional array over multiple rows and multiple columns. The four cascode transistors 150 and the four current source transistors 140 are also each arranged in a two-dimensional array over multiple rows and multiple columns.

[0081] This enables the components for reading signals of different rows of the same color to be arranged closely. As a result, process variations of the components, temperature differences, differences in power supply resistors, etc. are reduced to homogenize the characteristics of the components, which enables the differences between pixel rows of the same color to be suppressed.

[0082] As described above, in the present exemplary embodiment, degradation of image quality caused by differences in characteristics between pixel rows can be suppressed.

[0083] In the present exemplary embodiment, the switching transistors 160 and 161, the cascode transistors 150 and 151, and the current source transistors 140 and 141 are each arranged closely. However, as described in the second exemplary embodiment and the third exemplary embodiment, the circuits for processing signals of different colors can be arranged separately. This enables the occurrence of color mixing and the differences between columns of the same color to be further suppressed.

[0084] Furthermore, as described in the third exemplary embodiment, a stacked layer structure can be adopted. This enables degradation of image quality and degradation of operation speed caused by differences in parasitic capacitance of signal lines to be further suppressed.

[0085] In the present exemplary embodiment, the case where the number of signal lines for each pixel column is eight is described as an example; however, the present disclosure is not limited thereto. For example, the number of signal lines for each pixel column can be an optional number of four or more, such as 12, 16, 20, and 24.

[0086] A fifth exemplary embodiment will be described. Figure 9 is a schematic diagram of a photoelectric conversion device according to the fifth exemplary embodiment. Hereinafter, the description common to the first to fourth exemplary embodiments will be omitted, and the differences from Figure 7 will be mainly described.

[0087] Figure 9 The photoelectric conversion device shown in has a stacked layer structure as in Figure 7 In addition to Figure 7In addition to the components shown in [reference], first memories 70, 71, 72, and 73, second memories 80, 81, 82, and 83, and output circuits 100 and 101 are shown. Each of the first and second memories is a latch circuit.

[0088] The lower half of the circuit substrate 210 will be described. The components in the subsequent stage of the signal line are arranged in the order of current source 40, comparator 60, first memory 70, current source 41, comparator 61, first memory 71, second memory 80, and second memory 81.

[0089] In other words, a part of the second column circuit group (current source 41, comparator 61, first memory 71, and second memory 81) is arranged between the first memory 70 and the second memory 80 of the first column circuit group (current source 40, comparator 60, first memory 70, and second memory 80).

[0090] When the comparator 60 and the first memory 70 are arranged closely, the output line length and parasitic capacitance of the comparator 60 can be reduced. This suppresses the power supply change when the output of the comparator changes, which makes it possible to suppress the interference between comparators 60 and suppress the image quality degradation.

[0091] In addition, when the second memory 80 is arranged below the first memory 71, the distance between each of the second memories 80 and the output circuit 100 can be reduced, and a failure can be prevented when the signal level is transferred to the output circuit 100. This also applies to the upper half of the circuit substrate 210.

[0092] As described above, in the present exemplary embodiment, a part of the second column circuit group is arranged between the first memory 70 and the second memory 80 of the first column circuit group. This suppresses the image quality degradation caused by the power supply change.

[0093] The sixth exemplary embodiment will be described. Figure 10 is a schematic diagram of a photoelectric conversion device according to the sixth exemplary embodiment. The description common to the first to fifth exemplary embodiments will be omitted, and the differences from Figure 9 will be mainly described below.

[0094] Figure 10 The photoelectric conversion device shown in [reference] further includes a second circuit substrate 300 in addition to the pixel substrate 200 and the circuit substrate 210. The second memories 80, 81, 82, and 83, the output circuits 100 and 101, and the frame memory 310 are arranged on the second circuit substrate 300. The pixel substrate 200 is similar to Figure 9 the pixel substrate 200 shown in [reference]. Therefore, the illustration of the pixel substrate 200 is omitted.

[0095] The lower half of the second circuit board 300 will be described. The first memories 70 and 71 arranged on the circuit board 210 and the second memories 80 and 81 arranged on the second circuit board 300 are connected via the substrate indirect connectors 320 and 321. The signals held by the second memories 80 and 81 are transferred to the frame memory 310 and then output from the output circuit 100 to the outside of the chip.

[0096] In the present exemplary embodiment, the second memories 80 and 81 are provided on the second circuit board 300, which allows the signal transfer lines from the first memories 70 to the second memories 80 not to pass through the arrangements of the current source 41 and the comparator 61. This makes it possible to prevent digital signal transmission from interfering with the current source 41 and the comparator 61. This also holds true for the upper half of the second circuit board 300.

[0097] As described above, in the present exemplary embodiment, in the configuration where a part of the second column circuit group is arranged between the first memory 70 and the second memory 80 of the first column circuit group, a three-layer stacked layer structure is adopted. As a result, the analog unit that processes analog signals and the digital unit that processes digital signals are separated, which makes it possible to prevent image quality degradation caused by interference between the digital signal transmission of the first column circuit group and the analog circuits of the second column circuit group.

[0098] In the present exemplary embodiment, the second memories 80 and 81 and subsequent elements are provided on the second circuit board 300; however, the present disclosure is not limited thereto. For example, the first memories 70 and 71 may also be provided on the second circuit board 300, and the comparators 60 and 61 and the first memories 70 and 71 may be connected via the substrate indirect connectors.

[0099] Furthermore, in the present exemplary embodiment, the current source 41, the comparator 61, and the first memory 71 are arranged in an inverted manner in the vertical direction with respect to the arrangements of the current source 40, the comparator 60, and the first memory 70. In other words, the arrangement is flipped in the vertical direction. As a result, in the second circuit board 300, the second memories 80 and 81 can be closely arranged, and area savings can be achieved by the effect of allowing a control circuit (not shown) to be shared for the second memories 80 and 81 or allowing control lines to be shared for the second memories 80 and 81.

[0100] Reference Figure 11 Describe the photoelectric conversion system according to the seventh exemplary embodiment. Figure 11 is a block diagram showing a schematic configuration of the photoelectric conversion system according to the present exemplary embodiment.

[0101] The photoelectric conversion devices described in the above first to sixth exemplary embodiments are all applicable to various photoelectric conversion systems. Examples of applicable photoelectric conversion systems include digital still cameras, digital video cameras, surveillance cameras, copiers, fax machines, mobile phones, in-vehicle cameras, and observation satellites. In addition, the photoelectric conversion system also includes a camera module including an optical system such as a lens and an image capturing device. Figure 11 is a block diagram of a digital still camera as an example of a photoelectric conversion system.

[0102] Figure 11 The photoelectric conversion system shown in includes an image capturing device 1004 as an example of a photoelectric conversion device and a lens 1002 that forms an optical image of an object on the image capturing device 1004. The photoelectric conversion system also includes a diaphragm 1003 that changes the amount of light passing through the lens 1002 and a barrier 1001 that protects the lens 1002. The lens 1002 and the diaphragm 1003 configure the optical system to focus light on the image capturing device 1004. The image capturing device 1004 is a photoelectric conversion device according to any one of the above exemplary embodiments and converts the optical image formed by the lens 1002 into an electrical signal.

[0103] The photoelectric conversion system also includes a signal processing unit 1007, which is an image generation unit that generates an image by processing the output signal output from the image capturing device 1004. The signal processing unit 1007 performs various corrections and compressions as needed and outputs image data. The signal processing unit 1007 may be provided on a semiconductor substrate on which the image capturing device 1004 is provided, or may be provided on a semiconductor substrate different from the semiconductor substrate on which the image capturing device 1004 is provided.

[0104] The photoelectric conversion system also includes a memory unit 1010 that temporarily stores image data and an external interface unit (external I / F unit) 1013 for communicating with an external computer or the like. The photoelectric conversion system also includes a recording medium 1012 such as a semiconductor memory that performs recording or reading of the captured image data and a recording medium control interface unit (recording medium control I / F unit) 1011 that performs recording or reading of the recording medium 1012. The recording medium 1012 may be incorporated in the photoelectric conversion system or may be detachable.

[0105] The photoelectric conversion system further includes an overall control / calculation unit 1009 that performs various calculations and controls for the entire digital still camera, and a timing generation unit 1008 that outputs various timing signals to the image capturing device 1004 and the signal processing unit 1007. A timing signal and other signals can be input from the outside, and the photoelectric conversion system includes at least the image capturing device 1004 and the signal processing unit 1007 that processes the output signal output from the image capturing device 1004.

[0106] The image capturing device 1004 outputs the captured image signal to the signal processing unit 1007. The signal processing unit 1007 performs predetermined signal processing on the captured image signal output from the image capturing device 1004, and outputs image data. The photoelectric conversion system generates an image by using the image data.

[0107] As described above, according to this exemplary embodiment, a photoelectric conversion system employing the photoelectric conversion device (image capturing device) according to any one of the above exemplary embodiments can be implemented.

[0108] Reference will be made to Figure 12A and Figure 12B describe the photoelectric conversion system and the moving body according to the eighth exemplary embodiment. Figure 12A and Figure 12B are diagrams showing the configurations of the photoelectric conversion system and the moving body according to this exemplary embodiment.

[0109] Figure 12AAn example of a photoelectric conversion system related to an in-vehicle camera is shown. The photoelectric conversion system 3300 includes an image capture device 3310. The image capture device 3310 is a photoelectric conversion device (image capture device) according to any one of the above-described exemplary embodiments. The photoelectric conversion system 3300 includes an image processing unit 3312 that performs image processing on a plurality of pieces of image data acquired by the image capture device 3310, and a parallax acquisition unit 3314 that calculates a parallax (phase difference of a parallax image) from the plurality of pieces of image data acquired by the photoelectric conversion system 3300. The photoelectric conversion system 3300 further includes a distance acquisition unit 3316 that calculates a distance to an object based on the calculated parallax, and a collision determination unit 3318 that determines whether there is a possibility of a collision based on the calculated distance. The parallax acquisition unit 3314 and the distance acquisition unit 3316 are examples of distance information acquisition units that acquire information about the distance to an object. In other words, the information about the distance is information about parallax, defocus amount, distance to an object, and the like. The collision determination unit 3318 can determine the collision possibility by using any information about the distance. The distance information acquisition unit can be implemented by specially designed hardware, or can be implemented by a software module. In addition, the distance information acquisition unit can be implemented by a field programmable gate array (FPGA), an application specific integrated circuit (ASIC), or the like, or can be implemented by a combination thereof.

[0110] The photoelectric conversion system 3300 is connected to a vehicle information acquisition device 3320 and can acquire vehicle information such as vehicle speed, yaw rate, and steering angle. In addition, the photoelectric conversion system 3300 is connected to a control electronic control unit (ECU) 3330, which is a control unit that outputs a control signal that causes the vehicle to generate a braking force based on the determination result of the collision determination unit 3318. In addition, the photoelectric conversion system 3300 is also connected to an alarm device 3340 to issue an alarm to the driver based on the determination result of the collision determination unit 3318. For example, in the case where the possibility of a collision is high as the determination result of the collision determination unit 3318, the control ECU 3330 performs vehicle control to avoid a collision or reduce damage by applying brakes, pushing back the accelerator, suppressing engine output, and the like. The alarm device 3340 warns the user by issuing an alarm such as a sound, displaying alarm information on a screen of a car navigation system or the like, vibrating a seat belt or a steering wheel, and the like.

[0111] In the present exemplary embodiment, the photoelectric conversion system 3300 captures images around the vehicle, for example, images of the front side or the rear side of the vehicle. Figure 12BThe photoelectric conversion system is shown in the case of capturing an image of the front side of a vehicle (image capture range 3350). The vehicle information acquisition device 3320 sends an instruction to the photoelectric conversion system 3300 or the image capture device 3310. This configuration enables further improvement in the accuracy of distance measurement.

[0112] In the above description, examples of performing control to avoid collision with another vehicle have been described; however, the photoelectric conversion system is also applicable to control for autonomous driving following another vehicle, control for autonomous driving to prevent the vehicle from deviating from the lane, and the like. In addition, the photoelectric conversion system is not limited to vehicles such as automobiles, and is applicable to moving bodies (mobile devices) such as ships, aircraft, and industrial robots. Further, the photoelectric conversion system is not limited to moving bodies, and is widely applicable to devices using object recognition, such as intelligent transportation systems (ITS).

[0113] [Modification]

[0114] The present disclosure is not limited to the above-described exemplary embodiments and can be variously modified.

[0115] For example, examples of adding a part of the configuration of any exemplary embodiment to another exemplary embodiment and examples of replacing a part of the configuration of another exemplary embodiment with a part of the configuration of any exemplary embodiment are also included in the exemplary embodiments of the present disclosure.

[0116] The photoelectric conversion system according to each of the seventh and eighth exemplary embodiments above is an example of a photoelectric conversion system to which a photoelectric conversion device can be applied, and the photoelectric conversion system to which the photoelectric conversion device according to the present disclosure is applicable is not limited to Figure 11 and Figure 12A and Figure 12B the configurations shown in

[0117] The above-described exemplary embodiments are merely examples of embodiments for implementing the present disclosure, and the technical scope of the present disclosure should not be restrictively interpreted by the above-described exemplary embodiments. In other words, the present disclosure can be implemented in various forms without departing from the technical idea or main features of the present disclosure.

[0118] The present disclosure has been found in view of the above problems, and the present disclosure can suppress deterioration of image quality.

[0119] Although the present disclosure has been described with reference to the exemplary embodiments, it should be understood that the present disclosure is not limited to the disclosed exemplary embodiments. The scope of the claims should be understood to be the broadest interpretation so as to encompass all such modifications as well as equivalent structures and functions.

Claims

1. A photoelectric conversion device, characterized in that, The photoelectric conversion device includes: An array of pixels corresponding to different colors arranged in multiple rows and columns, the multiple columns including a first column, the array of pixels including a plurality of pixels corresponding to the same color arranged in multiple rows, each pixel included in the plurality of pixels being connected to a first signal line, a second signal line, a third signal line, and a fourth signal line, the first signal line, the second signal line, the third signal line, and the fourth signal line extending in the column direction, the pixels included in the first column being connected to a first circuit group via the first signal line, the pixels included in the first column being connected to a second circuit group via the second signal line, the pixels included in the first column being connected to a third circuit group via the third signal line, and the pixels included in the first column being connected to a fourth circuit group via the fourth signal line; and A first transistor included in the first circuit group, a second transistor included in the first circuit group and having a function different from that of the first transistor, a third transistor included in the second circuit group and having the same function as that of the first transistor, a fourth transistor included in the third circuit group and having the same function as that of the first transistor, and a fifth transistor included in the fourth circuit group and having the same function as that of the first transistor, and In a top view, the third transistor is arranged between the first transistor and the second transistor in the column direction, and the first transistor and the third transistor are arranged in different rows, the fourth transistor and the fifth transistor are arranged in different rows, the first transistor and the fourth transistor are arranged in different columns, and the third transistor and the fifth transistor are arranged in different columns.

2. The photoelectric conversion device according to claim 1, Among them, The plurality of pixels corresponding to the same color each include a color filter included in different pixels among the plurality of pixels, and wherein, the peak wavelengths of the light corresponding to the color filters overlap.

3. The photoelectric conversion device according to claim 1, wherein, Among the plurality of pixels corresponding to the same color, the pixels connected to the first signal line, the second signal line, the third signal line, and the fourth signal line are arranged in a line in a first direction of the pixel array.

4. The optoelectronic conversion device according to claim 1, wherein, A part of the first circuit group and a part of the second circuit group are arranged in an inverted manner.

5. The photoelectric conversion device according to claim 1, Among them, The plurality of pixels are provided on a first semiconductor substrate, wherein, the first circuit group and the second circuit group are provided on a second semiconductor substrate, and wherein, a plurality of semiconductor substrates including the first semiconductor substrate and the second semiconductor substrate are stacked.

6. The photoelectric conversion device according to claim 5, Among them, Each circuit included in the first circuit group and the second circuit group includes an analog unit and a digital unit, and wherein, the semiconductor substrate on which the analog unit of the circuit is provided and the semiconductor substrate on which the digital unit is provided are different from each other.

7. The optoelectronic conversion device according to claim 6, wherein, The analog unit includes a current source or a comparator.

8. The photoelectric conversion device according to claim 6, wherein, The digital unit includes a latch circuit.

9. The optoelectronic conversion device according to claim 1, wherein, The first circuit group and the second circuit group respectively include a current source for the first signal line and a current source for the second signal line.

10. The photoelectric conversion device according to claim 1, wherein, Both the first circuit group and the second circuit group include a comparator.

11. A photoelectric conversion system, characterized in that, The photoelectric conversion system includes: The photoelectric conversion device according to claim 1; and A processing unit configured to generate an image by using a signal output from the photoelectric conversion device.

12. A moving body, characterized in that, The moving body includes: The photoelectric conversion device according to claim 1; and A control unit configured to control the movement of the moving body by using a signal output from the photoelectric conversion device.

13. A first substrate to be stacked on a second substrate, Among them, The first substrate includes: An array of pixels corresponding to different colors arranged in multiple rows and multiple columns, the multiple columns including a first column, the array of pixels including multiple pixels corresponding to the same color arranged in multiple rows, each pixel included in the multiple pixels being connected to a first signal line, a second signal line, a third signal line, and a fourth signal line, the first signal line, the second signal line, the third signal line, and the fourth signal line extending in the column direction, the pixels included in the first column being connected to a first circuit group via the first signal line, the pixels included in the first column being connected to a second circuit group via the second signal line, the pixels included in the first column being connected to a third circuit group via the third signal line, and the pixels included in the first column being connected to a fourth circuit group via the fourth signal line; and Wherein, the second substrate includes: A first transistor included in the first circuit group, a second transistor included in the first circuit group and having a function different from that of the first transistor, a third transistor included in the second circuit group and having the same function as that of the first transistor, a fourth transistor included in the third circuit group and having the same function as that of the first transistor, and a fifth transistor included in the fourth circuit group and having the same function as that of the first transistor, and In a top view, the third transistor is arranged between the first transistor and the second transistor in the column direction, and the first transistor and the third transistor are arranged in different rows, the fourth transistor and the fifth transistor are arranged in different rows, the first transistor and the fourth transistor are arranged in different columns, and the third transistor and the fifth transistor are arranged in different columns.

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