RF switch device layout structure with embedded resistor and RF switch device

Abstract

The present application provides a radio frequency switch device layout structure and radio frequency switch device with embedded resistors. By embedding a gate finger group within the layout structure of the radio frequency switch device and forming a channel resistor through the gate finger group, the voltage between the gates is stabilized by using the channel resistor. While improving the attack resistance capability of the switch device, the compactness of the layout is improved, avoiding excessive layout area. In addition, the gate finger group contains at least two gate fingers, which can easily adjust the spacing between the gate fingers to achieve the effect of adjusting the Rds of the voltage between the gates, which is easy to implement in terms of process.

Description

Technical Field

[0001] The present invention relates to the technical field of switching devices, and in particular to a radio frequency switching device layout structure with an embedded resistor and a radio frequency switching device. Background Art

[0002] RF switching devices are commonly used as RF switch modules in frequency-division or time-division applications. A basic RF switch module consists of a transmit chain and a receive chain. The transmit chain is the signal chain from the RF front-end's power amplifier output to the antenna. The receive chain is the signal chain from the antenna to the RF front-end's low-noise amplifier. The RF characteristics of the switch device directly affect the performance of the switch module. For example, the switch device's insertion loss and isolation directly affect the switch module's insertion loss and isolation. The switch device's power tolerance is closely related to whether the transmit chain and receive chain will interfere with each other. The switch device's linearity is related to the switch module's linearity and the degree of signal distortion output to the antenna.

[0003] In traditional designs, large external resistors are used to connect multiple gate fingers in the circuit to stabilize the voltage between the gates and prevent gate voltage fluctuations caused by signal fluctuations, thereby improving the switching device's power resistance. However, connecting with large external resistors results in an excessively large device layout area. Summary of the Invention

[0004] The objectives of the present invention include, for example, providing a radio frequency switch device layout structure with embedded resistors and a radio frequency switch device, which can improve the attack resistance capability of the switch device while improving the compactness of the layout and avoiding excessive layout area.

[0005] The embodiments of the present invention can be implemented as follows:

[0006] In a first aspect, the present invention provides a layout structure of a radio frequency switch device with an embedded resistor, comprising: a substrate, an epitaxial layer disposed on the substrate, and a first electrode, a second electrode, and a gate disposed on the epitaxial layer;

[0007] The first electrode includes a first main electrode and a plurality of first finger electrodes, wherein the plurality of first finger electrodes are arranged in parallel and spaced apart in a first direction and are respectively connected to the first main electrode in a second direction, and the first direction and the second direction are perpendicular;

[0008] The second electrode includes a second main electrode and a plurality of second finger electrodes, wherein the plurality of second finger electrodes are arranged in parallel and spaced apart in the first direction and are respectively connected to the second main electrode in the second direction;

[0009] The first main electrode and the second main electrode are arranged opposite to each other in the second direction, and the first finger electrodes and the second finger electrodes are alternately arranged between the first main electrode and the second main electrode in the first direction and arranged in an interdigitated shape;

[0010] The gate includes at least one sub-gate, the sub-gate is arranged between the first main electrode and the second main electrode, the sub-gate includes a plurality of transverse sub-gates and longitudinal sub-gates, the transverse sub-gates and the longitudinal sub-gates are sequentially connected in series, the direction of the transverse sub-gates is the second direction, and the direction of the longitudinal sub-gates is the first direction;

[0011] The at least one sub-gate includes a first sub-gate, and the layout structure further includes at least one gate finger group, the at least one gate finger group includes a first gate finger group, the first gate finger group includes at least two gate fingers spaced apart in the second direction, the first gate finger group is located between two adjacent lateral sub-gates in the first direction, and is located between the first finger electrode and the longitudinal sub-gate connected to the two adjacent lateral sub-gates in the second direction;

[0012] In the first direction, one end of each gate finger is connected to one of the two adjacent horizontal sub-gates, and there is a gap between the other end of each gate finger and the other one; in the second direction, there is a gap between each two adjacent gate fingers and they are connected to different horizontal sub-gates;

[0013] A first metal block is further provided between the first gate finger group and the vertical sub-gate, the first metal block being connected to the second main electrode via a jumper wire and being insulated from the vertical sub-gate at the lower end of the jumper;

[0014] The first electrode is a source electrode and the second electrode is a drain electrode, or the first electrode is a drain electrode and the second electrode is a source electrode.

[0015] In an optional embodiment, the at least one sub-gate further includes a second sub-gate, and the at least one gate finger group further includes a second gate finger group;

[0016] The second sub-gate is arranged between the first main electrode and the first sub-gate, and the second gate finger group is located between two adjacent horizontal sub-gates included in the second sub-gate in the first direction and between the first finger electrode and the vertical sub-gate included in the second sub-gate in the second direction;

[0017] A second metal block is also provided between the second gate finger group and the longitudinal sub-gate of the second sub-gate, and a first connecting block is also provided between the second sub-gate and the first sub-gate. The second metal block and the first connecting block are connected by a jumper wire and are insulated and isolated from the longitudinal sub-gate of the second sub-gate at the lower end of the jumper.

[0018] In an optional embodiment, the at least one sub-gate further includes a third sub-gate, and the at least one gate finger group further includes a third gate finger group;

[0019] The third sub-gate is arranged between the first main electrode and the second sub-gate, and the third gate finger group is located between two adjacent horizontal sub-gates included in the third sub-gate in the first direction, and between the first finger electrode and the vertical sub-gate included in the third sub-gate in the second direction;

[0020] A third metal block is also provided between the third gate finger group and the longitudinal sub-gate of the third sub-gate, and a second connecting block is also provided between the third sub-gate and the second sub-gate. The third metal block and the second connecting block are connected by a jumper wire and are insulated and isolated from the longitudinal sub-gate of the third sub-gate at the lower end of the jumper.

[0021] In an optional embodiment, in each gate finger group, the spacing distance between two adjacent gate fingers in the second direction is 0.5um to 2um, the width of each gate finger is greater than 0.5um, and the spacing distance between each gate finger and the lateral sub-gate in the first direction is 0.5um to 1um.

[0022] In an optional embodiment, the lengths of the gate fingers in the first gate finger group, the gate fingers in the second gate finger group, and the gate fingers in the third gate finger group in the first direction decrease successively.

[0023] In a second aspect, the present invention provides a radio frequency switching device with an embedded resistor, comprising: a substrate, an epitaxial layer disposed on the substrate, and a first electrode, a second electrode, and a gate disposed on the epitaxial layer;

[0024] The first electrode includes a first main electrode and a plurality of first finger electrodes, wherein the plurality of first finger electrodes are arranged in parallel and spaced apart in a first direction and are respectively connected to the first main electrode in a second direction;

[0025] The second electrode includes a second main electrode and a plurality of second finger electrodes, wherein the plurality of second finger electrodes are arranged in parallel and spaced apart in the first direction and are respectively connected to the second main electrode in the second direction;

[0026] The first main electrode and the second main electrode are arranged opposite to each other in the second direction, and the first finger electrodes and the second finger electrodes are alternately arranged between the first main electrode and the second main electrode in the first direction and arranged in an interdigitated shape;

[0027] The gate includes at least one sub-gate, the sub-gate is arranged between the first main electrode and the second main electrode, the sub-gate includes a plurality of transverse sub-gates and longitudinal sub-gates, the transverse sub-gates and the longitudinal sub-gates are sequentially connected in series, the direction of the transverse sub-gates is the second direction, and the direction of the longitudinal sub-gates is the first direction;

[0028] The at least one sub-gate includes a first sub-gate, and the device further includes at least one gate finger group, the at least one gate finger group includes a first gate finger group, the first gate finger group includes at least two gate fingers spaced apart in the second direction, the first gate finger group is located between two adjacent lateral sub-gates in the first direction, and is located between the first finger electrode and the longitudinal sub-gate connected to the two adjacent lateral sub-gates in the second direction;

[0029] In the first direction, one end of each gate finger is connected to one of the two adjacent horizontal sub-gates, and there is a gap between the other end of each gate finger and the other one; in the second direction, there is a gap between each two adjacent gate fingers and they are connected to different horizontal sub-gates;

[0030] A first metal block is further provided between the first gate finger group and the vertical sub-gate, the first metal block being connected to the second main electrode via a jumper wire and being insulated from the vertical sub-gate at the lower end of the jumper;

[0031] The first electrode is a source electrode and the second electrode is a drain electrode, or the first electrode is a drain electrode and the second electrode is a source electrode.

[0032] In an optional embodiment, the at least one sub-gate further includes a second sub-gate, and the at least one gate finger group further includes a second gate finger group;

[0033] The second sub-gate is arranged between the first main electrode and the first sub-gate, and the second gate finger group is located between two adjacent horizontal sub-gates included in the second sub-gate in the first direction and between the first finger electrode and the vertical sub-gate included in the second sub-gate in the second direction;

[0034] A second metal block is also provided between the second gate finger group and the longitudinal sub-gate of the second sub-gate, and a first connecting block is also provided between the second sub-gate and the first sub-gate. The second metal block and the first connecting block are connected by a jumper wire and are insulated and isolated from the longitudinal sub-gate of the second sub-gate at the lower end of the jumper.

[0035] In an optional embodiment, the at least one sub-gate further includes a third sub-gate, and the at least one gate finger group further includes a third gate finger group;

[0036] The third sub-gate is arranged between the first main electrode and the second sub-gate, and the third gate finger group is located between two adjacent horizontal sub-gates included in the third sub-gate in the first direction, and between the first finger electrode and the vertical sub-gate included in the third sub-gate in the second direction;

[0037] A third metal block is also provided between the third gate finger group and the longitudinal sub-gate of the third sub-gate, and a second connecting block is also provided between the third sub-gate and the second sub-gate. The third metal block and the second connecting block are connected by a jumper wire and are insulated and isolated from the longitudinal sub-gate of the third sub-gate at the lower end of the jumper.

[0038] In an optional embodiment, in each gate finger group, the spacing distance between two adjacent gate fingers in the second direction is 0.5um to 2um, the width of each gate finger is greater than 0.5um, and the spacing distance between each gate finger and the lateral sub-gate in the first direction is 0.5um to 1um.

[0039] In an optional embodiment, the lengths of the gate fingers in the first gate finger group, the gate fingers in the second gate finger group, and the gate fingers in the third gate finger group in the first direction decrease successively.

[0040] The beneficial effects of the embodiments of the present invention include, for example:

[0041] The present application provides a radio frequency switch device layout structure and radio frequency switch device with embedded resistors. By embedding a gate finger group within the layout structure of the radio frequency switch device and forming a channel resistor through the gate finger group, the voltage between the gates is stabilized by using the channel resistor. While improving the attack resistance capability of the switch device, the compactness of the layout is improved, avoiding excessive layout area. In addition, the gate finger group contains at least two gate fingers, which can easily adjust the spacing between the gate fingers to achieve the effect of adjusting the Rds of the voltage between the gates, which is easy to implement in terms of process. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0043] Figure 1 A schematic diagram of the layout structure of a radio frequency switch device in the prior art;

[0044] Figure 2 A schematic diagram of a radio frequency switching device in the prior art;

[0045] Figure 3 Schematic diagram of a radio frequency switch device with an external resistor in the prior art;

[0046] Figure 4 A schematic diagram of a local hierarchical structure of a radio frequency switch device provided in an embodiment of the present application;

[0047] Figure 5 A partial top view schematic diagram of the radio frequency switch device provided in an embodiment of the present application;

[0048] Figure 6 A schematic diagram of the layout structure of a single-gate RF switch device provided in an embodiment of the present application;

[0049] Figure 7 A schematic diagram of a partial layout structure of a single-gate RF switch device provided in an embodiment of the present application;

[0050] Figure 8 A schematic diagram of the layout structure of a three-gate RF switch device provided in an embodiment of the present application;

[0051] Figure 9 A schematic diagram of a partial layout structure of a three-gate radio frequency switch device provided in an embodiment of the present application;

[0052] Figure 10 A schematic diagram of another layout structure of the three-gate RF switch device provided in an embodiment of the present application;

[0053] Figure 11 This is another partial schematic diagram of the layout structure of the three-gate RF switch device provided in an embodiment of the present application;

[0054] Figure 12 A graph showing the channel resistance and gate voltage of the radio frequency switching device provided in an embodiment of the present application;

[0055] Figure 13 A power handling capability curve diagram of the radio frequency switching device provided in an embodiment of the present application;

[0056] Figure 14 This is a graph showing the harmonic characteristics of the RF switching device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0057] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.

[0058] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention as claimed, but rather merely represents selected embodiments of the present invention. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort shall fall within the scope of protection of the present invention.

[0059] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0060] In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. appear, the orientation or position relationship indicated is based on the orientation or position relationship shown in the accompanying drawings, or is the orientation or position relationship in which the product of the invention is usually placed when in use. It is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be understood as a limitation on the present invention.

[0061] In addition, the terms "first", "second", "third", etc., if used, are merely used to distinguish and describe, and should not be understood as indicating or implying relative importance.

[0062] It should be noted that, in the absence of conflict, the features in the embodiments of the present invention may be combined with each other.

[0063] Existing RF switching devices mainly include single-gate RF switching devices and multi-gate RF switching devices. Compared with single-gate RF switching devices, multi-gate RF switching devices can have a more compact structure and lower insertion loss, such as Figure 1 and 2 As shown in . Therefore, the layout structure of multi-gate RF switch is more widely used. However, in the traditional structure, in order to avoid gate voltage fluctuations caused by signal fluctuations, the method used is to connect the middle area between the gates and the input and output ports through an external large resistor Rds to stabilize the voltage between the gates. Figure 3 As shown in the conventional structure, the desired Rds value is obtained by using Rds1, Rds2, and Rds3. The conventional layout structure uses a large external resistor to stabilize gate voltage fluctuations, resulting in an excessively large device layout area.

[0064] Based on the above research findings, the present application provides a layout structure of an RF switch device with embedded resistors. By embedding a gate finger group within the layout structure of the RF switch device and forming a channel resistor through the gate finger group, the voltage between the gates is stabilized by using the channel resistor. While improving the attack resistance of the switching device, the compactness of the layout is improved to avoid excessive layout area. In addition, the gate finger group contains at least two gate fingers, which can easily adjust the spacing between the gate fingers to achieve the effect of adjusting the Rds of the voltage between the gates, which is easy to implement in terms of process.

[0065] In this application, the first electrode is a source electrode and the second electrode is a drain electrode, or the first electrode is a drain electrode and the second electrode is a source electrode. In this embodiment, the following description is made by taking the first electrode as a source electrode and the second electrode as a drain electrode as an example.

[0066] First embodiment

[0067] An embodiment of the present application provides a layout structure of a radio frequency switch device with an embedded resistor, wherein the radio frequency switch device is a single-gate radio frequency switch device.

[0068] See also Figure 4 and Figure 5 The RF switch device layout structure includes a substrate 10, an epitaxial layer 20 disposed on the substrate 10, and a source S, a drain D, and a gate G disposed on the epitaxial layer 20. The epitaxial layer 20 includes a buffer layer, a channel layer, and a barrier layer disposed in sequence.

[0069] Please refer to Figure 6 The source S includes a source main electrode S0 and a plurality of source finger electrodes S1. The plurality of source finger electrodes S1 are arranged in parallel and spaced apart in a first direction, and each source finger electrode S1 is connected to the source main electrode S0 in a second direction. The first direction and the second direction are perpendicular to each other.

[0070] The drain D includes a drain main electrode D0 and a plurality of drain finger electrodes D1 . The plurality of drain finger electrodes D1 are arranged in parallel and spaced apart in a first direction, and each drain finger electrode D1 is connected to the drain main electrode D0 in a second direction.

[0071] The source main electrode S0 and the drain main electrode D0 are arranged opposite to each other in the second direction. A plurality of source finger electrodes S1 and a plurality of drain finger electrodes D1 are alternately arranged between the source main electrode S0 and the drain main electrode D0 in the first direction and arranged in an interdigitated manner.

[0072] The gate G includes at least one sub-gate, wherein the sub-gate is arranged between the source main electrode S0 and the drain main electrode D0, and the sub-gate includes multiple horizontal sub-gates and vertical sub-gates, which are sequentially connected in series. The horizontal sub-gates are oriented in the second direction, and the vertical sub-gates are oriented in the first direction.

[0073] In the layout structure of the single-gate radio frequency switch device provided in this embodiment, the at least one sub-gate includes a first sub-gate G1.

[0074] Please refer to Figure 7 The layout structure further includes at least one gate finger group. In this embodiment, the at least one gate finger group includes a first gate finger group G'1. The first gate finger group G'1 includes at least two gate fingers spaced apart in the second direction. For example, the number of gate fingers may be two, three, or four.

[0075] The first gate finger group G'1 is located between two adjacent horizontal sub-gates in the first direction, that is, between two adjacent horizontal sub-gates G1i of the first sub-gate G1. The first gate finger group G'1 is located between the source finger electrode S1 and the vertical sub-gate G1j connected to the two adjacent horizontal sub-gates G1i in the second direction.

[0076] In this embodiment, in the first direction, one end of each gate finger is connected to one of two adjacent horizontal sub-gates G1i, and the other end is spaced apart from the other. That is, each gate finger is connected to only one of two adjacent horizontal sub-gates G1i. In the second direction, a space is spaced apart between each pair of adjacent gate fingers, and the two gate fingers are connected to different horizontal sub-gates G1i.

[0077] In addition, a first metal block M1 is provided between the first gate finger group G'1 and the vertical sub-gate G1j. The first metal block M1 is connected to the drain main electrode D0 via a jumper line and is insulated from the vertical sub-gate G1j at the lower end of the jumper.

[0078] In this embodiment, the jumper wire is a metal wire, such as a copper wire, an aluminum wire, or a gold wire. The vertical sub-gate G1j at the lower end of the jumper wire is insulated from the jumper wire by air or by providing an insulating isolation layer. The insulating isolation layer can be made of an insulating material.

[0079] In this embodiment, a channel resistor is formed by the first gate finger group G'1. When the RF switch device is in the off state, the voltage of the first gate finger group G'1 is Vg, i.e., the off voltage. At this time, the epitaxial layer 20 below the first gate finger group G'1 is in a channel-off state, and the channel resistor formed below the first gate finger group G'1 is equivalent to Rds1, which can be used to stabilize the voltage between the gates. In addition, the first gate finger group G'1 is embedded in the layout structure of the RF switch device. Therefore, it is possible to improve the power handling capability of the switch device while increasing the compactness of the layout and avoiding the effect of an excessively large layout area.

[0080] Furthermore, in this embodiment, the gate finger group includes at least two gate fingers, and the spacing between the gate fingers and the lateral sub-gate in the first direction can be adjusted to achieve the purpose of adjusting the corresponding resistance. The spacing between the gate fingers and the lateral sub-gate G1i can be achieved by opening a hole. Due to the spacing between the gate fingers and the lateral sub-gate G1i, the channel of the epitaxial layer 20 below the spacing between the gate fingers will generate more free electrons, thereby reducing the resulting channel resistance. In other words, the greater the spacing between the gate fingers and the lateral sub-gate G1i, the smaller the equivalent resistance.

[0081] Based on the above, in this embodiment, the resistance can also be adjusted by adjusting the distance between adjacent gate fingers. During the manufacturing process, adjusting the distance between adjacent gate fingers is easier to achieve than adjusting the distance between a gate finger and the lateral sub-gate G1i by opening a hole. Therefore, in this embodiment, the voltage Rds between gates can be adjusted conveniently by adjusting the spacing between gate fingers, which is easy to implement in terms of manufacturing process.

[0082] In this embodiment, for each gate finger group, the spacing distance between two adjacent gate fingers in the second direction is 0.5um to 2um, the width of each gate finger is greater than 0.5um, and the spacing distance between each gate finger and the lateral sub-gate in the first direction is 0.5um to 1um.

[0083] The spacing between every two adjacent gate fingers in the second direction may be the same or different, and the spacing between each gate finger and the lateral sub-gate in the first direction may be the same or different.

[0084] As the spacing distance between two adjacent gate fingers in the second direction increases, the equivalent Rds resistance value decreases. Conversely, as the spacing distance between two adjacent gate fingers in the second direction decreases, the equivalent Rds resistance value increases.

[0085] Within the above distance range, the spacing between adjacent gate fingers and the spacing between each gate finger and the lateral sub-gate G1i can be adjusted to correct the corresponding resistance value, thereby obtaining the Rds value under the corresponding device structure.

[0086] Second embodiment

[0087] The present embodiment provides a layout structure for an RF switch device with an embedded resistor, wherein the RF switch device is a multi-gate RF switch device. In this embodiment, a three-gate RF switch device is used as an example. It should be noted that the layout structure provided in this embodiment can also include a switch device structure including two sub-gates, a switch device structure including four sub-gates, etc.

[0088] In this embodiment, the RF switch device layout structure includes a substrate 10, an epitaxial layer 20 disposed on the substrate 10, and a source S, a drain D, and a gate G disposed on the epitaxial layer 20. The epitaxial layer 20 includes a buffer layer, a channel layer, and a barrier layer disposed in sequence.

[0089] See also Figure 8 The source S includes a source main electrode S0 and a plurality of source finger electrodes S1. The plurality of source finger electrodes S1 are arranged in parallel and spaced apart in a first direction, and each source finger electrode S1 is connected to the source main electrode S0 in a second direction. The first direction and the second direction are perpendicular to each other.

[0090] The drain D includes a drain main electrode D0 and a plurality of drain finger electrodes D1 . The plurality of drain finger electrodes D1 are arranged in parallel and spaced apart in a first direction, and each drain finger electrode D1 is connected to the drain main electrode D0 in a second direction.

[0091] The source main electrode S0 and the drain main electrode D0 are arranged opposite to each other in the second direction. A plurality of source finger electrodes S1 and a plurality of drain finger electrodes D1 are alternately arranged between the source main electrode S0 and the drain main electrode D0 in the first direction and arranged in an interdigitated manner.

[0092] The gate S includes a plurality of sub-gates, wherein each sub-gate is disposed between a source main electrode S0 and a drain main electrode D0. Each sub-gate includes a plurality of horizontal sub-gates and vertical sub-gates, which are sequentially connected in series. The horizontal sub-gates are oriented in the second direction, and the vertical sub-gates are oriented in the first direction.

[0093] Please refer to Figure 9 The plurality of sub-gates include a first sub-gate G1, a second sub-gate G2, and a third sub-gate G3. The layout structure also includes a first gate finger group G'1, a second gate finger group G'2, and a third gate finger group G'3.

[0094] The first gate finger group G'1 includes at least two gate fingers spaced apart in the second direction. The first gate finger group G'1 is located between two adjacent horizontal sub-gates G1i of the first sub-gate G1 in the first direction, and is located between the source finger electrode S1 and the vertical sub-gate G1j connected to the two adjacent horizontal sub-gates G1i in the second direction.

[0095] In the first gate finger group G'1, one end of each gate finger in the first direction is connected to one of the two adjacent horizontal sub-gates G1i, and there is a gap between the other end. In the second direction, there is a gap between every two adjacent gate fingers and they are connected to different horizontal sub-gates G1i.

[0096] A first metal block M1 is further disposed between the first gate finger group G'1 and the vertical sub-gate G1j. The first metal block M1 is connected to the drain main electrode D0 via a jumper wire and is insulated from the vertical sub-gate G1j at the lower end of the jumper. The vertical sub-gate G1j at the lower end can be isolated from the jumper wire by air insulation or by filling with an insulating dielectric.

[0097] The second sub-gate G2 is arranged between the source main electrode S0 and the first sub-gate G1, and the second gate finger group G'2 is located between the two adjacent horizontal sub-gates G2i included in the second sub-gate G2 in the first direction, and between the source finger electrode S1 and the vertical sub-gate G2j included in the second sub-gate G2 in the second direction.

[0098] In the second gate finger group G'2, one end of each gate finger in the first direction is connected to one of the two adjacent horizontal sub-gates G2i, and there is a gap between the other end and the other one. In the second direction, there is a gap between every two adjacent gate fingers and they are connected to different horizontal sub-gates G2i.

[0099] A second metal block M2 is also provided between the second gate finger group G'2 and the longitudinal sub-gate G2j of the second sub-gate G2, and a first connecting block N1 is also provided between the second sub-gate G2 and the first sub-gate G1. The second metal block M2 and the first connecting block N1 are connected by a jumper wire and are insulated and isolated from the longitudinal sub-gate of the second sub-gate at the lower end of the jumper.

[0100] The third sub-gate G3 is arranged between the source main electrode S0 and the second sub-gate G2. The third gate finger group G'3 is located between two adjacent horizontal sub-gates G3i included in the third sub-gate G3 in the first direction and between the source finger electrode S1 and the vertical sub-gate G3j included in the third sub-gate G3 in the second direction.

[0101] In the third gate finger group G'3, one end of each gate finger is connected to one of the two adjacent horizontal sub-gates G3i in the first direction, and there is a gap between the other end and the other one. In the second direction, there is a gap between every two adjacent gate fingers and they are connected to different horizontal sub-gates G3i.

[0102] A third metal block M3 is also provided between the third gate finger group G'3 and the longitudinal sub-gate G3j of the third sub-gate G3, and a second connecting block N2 is also provided between the third sub-gate G3 and the second sub-gate G2. The third metal block M3 and the second connecting block N2 are connected by a jumper line and are insulated and isolated from the longitudinal sub-gate G3j of the third sub-gate G3 at the lower end of the jumper.

[0103] In this embodiment, the lengths of the gate fingers in the first gate finger group G'1, the gate fingers in the second gate finger group G'2, and the gate fingers in the third gate finger group G'3 in the first direction decrease in sequence.

[0104] It should be noted that in this embodiment, each gate finger group may have two or more gate fingers, and the resistance of the corresponding gate finger group can be increased by increasing the number of gate fingers. In other words, the greater the number of gate finger groups, the greater the equivalent Rds resistance value. Figure 10 and Figure 11 In this embodiment, a schematic diagram is exemplarily shown when the first gate finger group G'1, the second gate finger group G'2 and the third gate finger group G'3 each have four gate fingers.

[0105] Furthermore, in the first gate finger group G'1, the second gate finger group G'2 and the third gate finger group G'3, the spacing distance between two adjacent gate fingers in the second direction (D11, D12, D13, D21, D22, D23, D31, D32, D33) is 0.5um to 2um, the width of each gate finger is greater than 0.5um, and the spacing distance between each gate finger and the lateral sub-gate in the first direction (d11, d12, d13, d14, d21, d22, d23, d24, d31, d32, d33, d34) is 0.5um to 1um.

[0106] The values of D11, D12, D13, D21, D22, D23, D31, D32, and D33 can be the same or different. As the distance values of D11, D12, D13, D21, D22, D23, D31, D32, and D33 increase, the equivalent Rds resistance value decreases, and vice versa.

[0107] Similarly, the distance values of d11, d12, d13, d14, d21, d22, d23, d24, d31, d32, d33, and d34 can be the same or different.

[0108] In this embodiment, the spacing between the gate fingers and the horizontal sub-gates in the first direction in each of the first gate finger group G'1, the third gate finger group G'3, and the third gate finger group G'3 can be adjusted to adjust the corresponding resistance. Specifically, the spacing between the gate fingers in the first gate finger group G'1 and the horizontal sub-gates G1i of the first sub-gate G1 is adjustable. The spacing between the gate fingers in the second gate finger group G'2 and the horizontal sub-gates G2i of the second sub-gate G2 is adjustable. The spacing between the gate fingers in the third gate finger group G'3 and the horizontal sub-gates G3i of the third sub-gate G3 is adjustable.

[0109] The spacing between each gate finger and the lateral sub-gate can be achieved by opening a hole. Due to the spacing between the gate fingers and the lateral sub-gate, the epitaxial layer 20 channel below the gap between the gate fingers generates more free electrons, thereby reducing the channel resistance. In other words, the greater the spacing between the gate fingers and the lateral sub-gate, the smaller the equivalent resistance.

[0110] Based on the above, in this embodiment, the resistance can also be adjusted by adjusting the distance between adjacent gate fingers. Specifically, the distance between each adjacent gate finger in the first gate finger group G'1 is adjustable, the distance between each adjacent gate finger in the second gate finger group G'2 is adjustable, and the distance between each adjacent gate finger in the third gate finger group G'3 is adjustable.

[0111] During the manufacturing process, adjusting the distance between adjacent gate fingers is easier to achieve than adjusting the distance between the gate fingers and the lateral sub-gates by opening holes. Therefore, in the solution of this embodiment, the effect of adjusting the voltage Rds between the gates can be achieved by conveniently adjusting the spacing between the gate fingers, which is easy to implement in the process.

[0112] When the RF switching device is in the on state, the channel in the epitaxial layer 20 below the first gate finger group G'1, the second gate finger group G'2 and the third gate finger group G'3 is in the on state. At this time, the resistance of the channel resistor formed below the first gate finger group G'1, the second gate finger group G'2 and the third gate finger group G'3 is very small.

[0113] When the RF switch device is in the off state, the voltage across the first, second, and third gate finger groups G'1, G'2, and G'3 is the device's off voltage Vg, and the channel in the epitaxial layer 20 beneath the first, second, and third gate finger groups G'1, G'2, and G'3 is in the off state. The channel resistance formed beneath the first, second, and third gate finger groups G'1, G'2, and G'3 is equivalent to the series connection of the corresponding resistances generated by the spacing between the gate fingers contained therein.

[0114] See also Figure 12 , which is a curve diagram of the channel resistance and gate voltage of the RF switching device under the layout structure provided in this embodiment. Figure 13 The figure shows the power handling capability curve of the switching device, including the switching device under the layout structure provided by this embodiment and the corresponding curve of the switching device in the prior art. The curve where the triangle is located is the corresponding curve of the switching device under this embodiment, and the curve where the dot is located is the corresponding curve of the switching device under the prior art. Figure 13 It can be seen from the figure that the layout structure provided in this embodiment not only reduces the layout area, but also improves the power handling capability of the corresponding switching device.

[0115] Figure 14 The harmonic characteristic curves of the switching device are shown in FIG, including the switching device under the layout structure provided by this embodiment and the corresponding curves of the switching device in the prior art. The curve where the triangle is located is the corresponding curve of the switching device in this embodiment, and the curve where the dot is located is the corresponding curve of the switching device in the prior art. Figure 14 As can be seen from the figure, the switch device in the layout structure provided by this embodiment reduces high-order harmonics and improves linearity. It can be seen that the switch device in the layout structure provided by this embodiment can achieve better results in terms of insertion loss, isolation and harmonics.

[0116] Third embodiment

[0117] This embodiment of the present application also provides an RF switch device with an embedded resistor. This RF switch device has the same technical features, solves the same technical problems, and achieves the same technical effects as the aforementioned RF switch device layout structure. Therefore, this embodiment will not be described in detail here. Please refer to the relevant description of the RF switch device layout structure in any of the aforementioned embodiments.

[0118] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present invention should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. A radio frequency switch device layout structure with an embedded resistor, characterized in that: include: A substrate, an epitaxial layer disposed on the substrate, and a first electrode, a second electrode, and a gate disposed on the epitaxial layer; The first electrode includes a first main electrode and a plurality of first finger electrodes, wherein the plurality of first finger electrodes are arranged in parallel and spaced apart in a first direction and are respectively connected to the first main electrode in a second direction, and the first direction and the second direction are perpendicular; The second electrode includes a second main electrode and a plurality of second finger electrodes, wherein the plurality of second finger electrodes are arranged in parallel and spaced apart in the first direction and are respectively connected to the second main electrode in the second direction; The first main electrode and the second main electrode are arranged opposite to each other in the second direction, and the first finger electrodes and the second finger electrodes are alternately arranged between the first main electrode and the second main electrode in the first direction and arranged in an interdigitated shape; The gate includes at least one sub-gate, the sub-gate is arranged between the first main electrode and the second main electrode, the sub-gate includes a plurality of transverse sub-gates and longitudinal sub-gates, the transverse sub-gates and the longitudinal sub-gates are sequentially connected in series, the direction of the transverse sub-gates is the second direction, and the direction of the longitudinal sub-gates is the first direction; The at least one sub-gate includes a first sub-gate, and the layout structure further includes at least one gate finger group, the at least one gate finger group includes a first gate finger group, the first gate finger group includes at least two gate fingers spaced apart in the second direction, the first gate finger group is located between two adjacent lateral sub-gates in the first direction, and is located between the first finger electrode and the longitudinal sub-gate connected to the two adjacent lateral sub-gates in the second direction; In the first direction, one end of each gate finger is connected to one of the two adjacent horizontal sub-gates, and there is a gap between the other end of each gate finger and the other one; in the second direction, there is a gap between each two adjacent gate fingers and they are connected to different horizontal sub-gates; A first metal block is further provided between the first gate finger group and the vertical sub-gate, the first metal block being connected to the second main electrode via a jumper wire and being insulated from the vertical sub-gate at the lower end of the jumper; The first electrode is a source electrode and the second electrode is a drain electrode, or the first electrode is a drain electrode and the second electrode is a source electrode.

2. The layout structure of the radio frequency switch device with embedded resistor according to claim 1, characterized in that: The at least one sub-gate further includes a second sub-gate, and the at least one gate finger group further includes a second gate finger group; The second sub-gate is arranged between the first main electrode and the first sub-gate, and the second gate finger group is located between two adjacent horizontal sub-gates included in the second sub-gate in the first direction and between the first finger electrode and the vertical sub-gate included in the second sub-gate in the second direction; A second metal block is also provided between the second gate finger group and the longitudinal sub-gate of the second sub-gate, and a first connecting block is also provided between the second sub-gate and the first sub-gate. The second metal block and the first connecting block are connected by a jumper wire and are insulated and isolated from the longitudinal sub-gate of the second sub-gate at the lower end of the jumper.

3. The layout structure of the radio frequency switch device with embedded resistor according to claim 2, characterized in that: The at least one sub-gate further includes a third sub-gate, and the at least one gate finger group further includes a third gate finger group; The third sub-gate is arranged between the first main electrode and the second sub-gate, and the third gate finger group is located between two adjacent horizontal sub-gates included in the third sub-gate in the first direction, and between the first finger electrode and the vertical sub-gate included in the third sub-gate in the second direction; A third metal block is also provided between the third gate finger group and the longitudinal sub-gate of the third sub-gate, and a second connecting block is also provided between the third sub-gate and the second sub-gate. The third metal block and the second connecting block are connected by a jumper wire and are insulated and isolated from the longitudinal sub-gate of the third sub-gate at the lower end of the jumper.

4. The layout structure of the radio frequency switch device with embedded resistor according to claim 1, characterized in that: In each gate finger group, the spacing between two adjacent gate fingers in the second direction is 0.5um to 2um, the width of each gate finger is greater than 0.5um, and the spacing between each gate finger and the lateral sub-gate in the first direction is 0.5um to 1um.

5. The layout structure of the radio frequency switch device with embedded resistor according to claim 3, characterized in that: The lengths of the gate fingers in the first gate finger group, the gate fingers in the second gate finger group, and the gate fingers in the third gate finger group decrease in the first direction.

6. A radio frequency switching device with an embedded resistor, characterized in that: include: A substrate, an epitaxial layer disposed on the substrate, and a first electrode, a second electrode, and a gate disposed on the epitaxial layer; The first electrode includes a first main electrode and a plurality of first finger electrodes, wherein the plurality of first finger electrodes are arranged in parallel and spaced apart in a first direction and are respectively connected to the first main electrode in a second direction, and the first direction and the second direction are perpendicular; The second electrode includes a second main electrode and a plurality of second finger electrodes, wherein the plurality of second finger electrodes are arranged in parallel and spaced apart in the first direction and are respectively connected to the second main electrode in the second direction; The first main electrode and the second main electrode are arranged opposite to each other in the second direction, and the first finger electrodes and the second finger electrodes are alternately arranged between the first main electrode and the second main electrode in the first direction and arranged in an interdigitated shape; The gate includes at least one sub-gate, the sub-gate is arranged between the first main electrode and the second main electrode, the sub-gate includes a plurality of transverse sub-gates and longitudinal sub-gates, the transverse sub-gates and the longitudinal sub-gates are sequentially connected in series, the direction of the transverse sub-gates is the second direction, and the direction of the longitudinal sub-gates is the first direction; The at least one sub-gate includes a first sub-gate, and the device further includes at least one gate finger group, the at least one gate finger group includes a first gate finger group, the first gate finger group includes at least two gate fingers spaced apart in the second direction, the first gate finger group is located between two adjacent lateral sub-gates in the first direction, and is located between the first finger electrode and the longitudinal sub-gate connected to the two adjacent lateral sub-gates in the second direction; In the first direction, one end of each gate finger is connected to one of the two adjacent horizontal sub-gates, and there is a gap between the other end of each gate finger and the other one; in the second direction, there is a gap between each two adjacent gate fingers and they are connected to different horizontal sub-gates; A first metal block is further provided between the first gate finger group and the vertical sub-gate, the first metal block being connected to the second main electrode via a jumper wire and being insulated from the vertical sub-gate at the lower end of the jumper; The first electrode is a source electrode and the second electrode is a drain electrode, or the first electrode is a drain electrode and the second electrode is a source electrode.

7. The radio frequency switch device with an embedded resistor according to claim 6, characterized in that: The at least one sub-gate further includes a second sub-gate, and the at least one gate finger group further includes a second gate finger group; The second sub-gate is arranged between the first main electrode and the first sub-gate, and the second gate finger group is located between two adjacent horizontal sub-gates included in the second sub-gate in the first direction and between the first finger electrode and the vertical sub-gate included in the second sub-gate in the second direction; A second metal block is also provided between the second gate finger group and the longitudinal sub-gate of the second sub-gate, and a first connecting block is also provided between the second sub-gate and the first sub-gate. The second metal block and the first connecting block are connected by a jumper wire and are insulated and isolated from the longitudinal sub-gate of the second sub-gate at the lower end of the jumper.

8. The radio frequency switch device with an embedded resistor according to claim 7, characterized in that: The at least one sub-gate further includes a third sub-gate, and the at least one gate finger group further includes a third gate finger group; The third sub-gate is arranged between the first main electrode and the second sub-gate, and the third gate finger group is located between two adjacent horizontal sub-gates included in the third sub-gate in the first direction, and between the first finger electrode and the vertical sub-gate included in the third sub-gate in the second direction; A third metal block is also provided between the third gate finger group and the longitudinal sub-gate of the third sub-gate, and a second connecting block is also provided between the third sub-gate and the second sub-gate. The third metal block and the second connecting block are connected by a jumper wire and are insulated and isolated from the longitudinal sub-gate of the third sub-gate at the lower end of the jumper.

9. The radio frequency switch device with an embedded resistor according to claim 6, characterized in that: In each gate finger group, the spacing between two adjacent gate fingers in the second direction is 0.5um to 2um, the width of each gate finger is greater than 0.5um, and the spacing between each gate finger and the lateral sub-gate in the first direction is 0.5um to 1um.

10. The radio frequency switch device with built-in resistor according to claim 8, characterized in that: The lengths of the gate fingers in the first gate finger group, the gate fingers in the second gate finger group, and the gate fingers in the third gate finger group decrease in the first direction.

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