Substrate processing apparatus and substrate processing method

Abstract

A substrate processing apparatus and a substrate processing method capable of suppressing collapse of a pattern formed on a substrate are provided. The substrate processing method includes a rinsing process in which a substrate (W) is processed with a rinsing liquid (L2); an immersion process in which the substrate (W) is immersed in diluted isopropyl alcohol (dIPA) stored in a processing tank (230) after the rinsing process; a first isopropyl alcohol processing process in which the substrate (W) is processed with isopropyl alcohol after the immersion process; and a hydrophobic processing process in which the substrate (W) is subjected to hydrophobic processing after the first isopropyl alcohol processing process.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus and a substrate processing method. Background Technology

[0002] It is known that substrates used in electronic components such as semiconductor devices and liquid crystal display devices are processed by substrate processing equipment. With the miniaturization and / or three-dimensionalization of semiconductor elements formed on semiconductor substrates in recent years, the demand for uniform substrate processing is increasing. For example, NAND devices with three-dimensional structures have a stacked structure with a three-dimensional uneven structure.

[0003] The substrate is sometimes processed by immersing it in a storage solution in a processing tank. The process of manufacturing articles such as semiconductor devices by processing substrates such as semiconductor wafers includes a chemical treatment process of treating the substrate with a chemical solution, a rinsing process of removing the chemical solution from the surface of the substrate with a rinsing solution, and a drying process of drying the substrate.

[0004] However, during the drying process, the pattern formed on the substrate surface sometimes breaks down. This breakdown is caused by the surface tension of the rinsing liquid penetrating the pattern. Therefore, to avoid pattern breakdown, a hydrophobic agent is sometimes supplied to the substrate, and a hydrophobic protective film is used to cover the pattern (see Patent Document 1).

[0005] For example, Patent Document 1 discloses a substrate processing method in which the substrate is sequentially subjected to a chemical solution treatment, a pure water rinsing treatment, an ethanol rinsing treatment, a hydrophobic treatment, an ethanol rinsing treatment, a pure water rinsing treatment, and a drying treatment. In the ethanol rinsing treatment after the hydrophobic treatment, the hydrophobic agent remaining on the substrate surface is replaced with isopropyl alcohol (IPA) and removed.

[0006] [Existing Technical Documents]

[0007] [Patent Literature]

[0008] [Patent Document 1] Japanese Patent Application Publication No. 2010-114414 Summary of the Invention

[0009] [The problem the invention aims to solve]

[0010] However, in the substrate processing apparatus of Patent Document 1, the pattern formed on the substrate is still at risk of breaking. In particular, when forming a pattern with a high aspect ratio, the pattern formed on the substrate in the substrate processing apparatus of Patent Document 1 is prone to breaking.

[0011] The present invention was made in view of the aforementioned problems, and its object is to provide a substrate processing apparatus and a substrate processing method that can suppress the collapse of patterns formed on a substrate.

[0012] [Technical means to solve the problem]

[0013] According to one aspect of the present invention, a substrate processing method includes: a rinsing step, in which a substrate is treated with a rinsing solution; an immersion step, after the rinsing step, in which the substrate is immersed in diluted isopropanol stored in a processing tank; a first isopropanol treatment step, after the immersion step, in which the substrate is treated with isopropanol; and a hydrophobic treatment step, after the first isopropanol treatment step, in which the substrate is hydrophobically treated.

[0014] In one embodiment, during the impregnation process, the concentration of the diluted isopropanol increases according to the impregnation time of the substrate.

[0015] In one embodiment, the rinsing process is performed using a rinsing treatment apparatus, the impregnation process is performed using a drying treatment apparatus, and the substrate processing method further includes a conveying process, in which the substrate is conveyed from the rinsing treatment apparatus to the drying treatment apparatus after the rinsing process and before the impregnation process.

[0016] In one embodiment, the substrate processing method further includes: prior to the impregnation process, storing the diluted isopropanol in the processing tank while an inactive gas is supplied to the chamber containing the processing tank.

[0017] In one embodiment, the substrate processing method further includes: a second isopropanol treatment step, wherein the substrate is treated with isopropanol after the hydrophobic treatment step; and an inactive gas supply step, wherein an inactive gas is supplied to the substrate after the second isopropanol treatment step.

[0018] In one embodiment, the substrate processing method further includes an immersion step, wherein the substrate is immersed in diluted isopropanol stored in the processing tank after the hydrophobic treatment step and before the second isopropanol treatment step.

[0019] According to another aspect of the present invention, a substrate processing apparatus includes: a chamber; a processing tank disposed in the chamber for storing a storage liquid; a substrate holding section for holding a substrate and movable for immersing the substrate in the storage liquid of the processing tank; a liquid supply section for supplying diluted isopropanol to the processing tank as the storage liquid; an isopropanol supply section for supplying vapor of isopropanol to the chamber; a hydrophobic agent supply section for supplying vapor of a hydrophobic agent to the chamber; and a control section for controlling the substrate holding section, the liquid supply section, the isopropanol supply section, and the hydrophobic agent supply section, wherein the control section controls the substrate holding section, the isopropanol supply section, and the hydrophobic agent supply section such that after immersing the substrate treated with the rinsing liquid in diluted isopropanol stored in the processing tank, vapor of isopropanol is supplied to the substrate, and subsequently, vapor of the hydrophobic agent is supplied to the substrate.

[0020] In one embodiment, the control unit controls the liquid supply unit so that the concentration of the diluted isopropanol increases according to the time the substrate is immersed in the diluted isopropanol in the processing tank.

[0021] In one embodiment, the substrate processing apparatus further includes: a drying processing apparatus, including the chamber, the processing tank, the substrate holding part, the isopropanol supply part, and the hydrophobic agent supply part; a rinsing processing apparatus, which uses the rinsing liquid to process the substrate; and a conveying device, which conveys the substrate treated with the rinsing liquid in the rinsing processing apparatus to the drying processing apparatus.

[0022] In one embodiment, the substrate processing apparatus further includes: an inactive gas supply unit that supplies vapor of an inactive gas into the chamber, and a control unit that controls the liquid supply unit and the inactive gas supply unit so that, while the chamber is supplied with an inactive gas, the diluted isopropanol is supplied to the processing tank.

[0023] In one embodiment, the control unit controls the isopropanol supply unit and the inactive gas supply unit so that after the hydrophobic agent is supplied to the substrate, isopropanol vapor is supplied to the substrate, and then an inactive gas is supplied to the substrate.

[0024] In one embodiment, the control unit controls the substrate holding unit such that, after the hydrophobic agent is supplied to the substrate and before the isopropanol vapor is supplied to the substrate, the substrate is immersed in diluted isopropanol stored in the processing tank.

[0025] [The effects of the invention]

[0026] According to the present invention, it is possible to suppress the collapse of the pattern formed on the substrate. Attached Figure Description

[0027] Figure 1 This is a schematic diagram of the substrate processing apparatus of this embodiment.

[0028] Figure 2 This is a flowchart of the substrate processing performed by the substrate processing method of this embodiment.

[0029] Figure 3 (a) and Figure 3 (b) is a schematic diagram of the first processing apparatus in the substrate processing apparatus of this embodiment.

[0030] Figure 4 (a) and Figure 4 (b) is a schematic diagram of the second processing apparatus in the substrate processing apparatus of this embodiment.

[0031] Figure 5 (a) and Figure 5 (b) is a schematic diagram of the third processing apparatus in the substrate processing apparatus of this embodiment.

[0032] Figure 6 This is a flowchart of the drying process performed by the substrate processing apparatus of this embodiment.

[0033] Figure 7 (a) to Figure 7 (e) is a schematic diagram illustrating the drying process performed by the third processing device in the substrate processing apparatus of this embodiment.

[0034] Figure 8 This is a schematic diagram of the third processing apparatus in the substrate processing apparatus of this embodiment.

[0035] Figure 9 This is a schematic diagram of the third processing apparatus in the substrate processing apparatus of this embodiment.

[0036] Figure 10 (a) to Figure 10 (f) is a schematic diagram illustrating the process of the drying process performed by the substrate processing apparatus of this embodiment.

[0037] Figure 11 (a) to Figure 11 (e) is a schematic diagram illustrating the process of the drying process performed by the substrate processing apparatus of this embodiment.

[0038] Figure 12 (a) to Figure 12(d) is a schematic diagram illustrating the process of the drying process performed by the substrate processing apparatus of this embodiment.

[0039] Figure 13 (a) to Figure 13 (d) is a schematic diagram illustrating the process of the drying process performed by the substrate processing apparatus of this embodiment.

[0040] Figure 14 (a) to Figure 14 (f) is a schematic diagram illustrating the drying process performed by the third processing device in the substrate processing apparatus of this embodiment.

[0041] Figure 15 This is a schematic diagram of the substrate processing apparatus of this embodiment. Detailed Implementation

[0042] Hereinafter, embodiments of the substrate processing apparatus and substrate processing method of the present invention will be described with reference to the accompanying drawings. In the drawings, identical or equivalent parts are labeled with the same reference numerals and will not be described again. Furthermore, in this specification, for ease of understanding, the X-axis, Y-axis, and Z-axis are sometimes described as orthogonal to each other. Typically, the X-axis and Y-axis are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction.

[0043] Reference Figure 1 The following describes an embodiment of the substrate processing apparatus 100 of the present invention. Figure 1 This is a schematic diagram of the substrate processing apparatus 100 of this embodiment.

[0044] The substrate processing apparatus 100 processes the substrate W. The substrate processing apparatus 100 processes the substrate W to perform at least one of the following: etching, surface treatment, property imparting, processing film formation, removal of at least a portion of the film, and cleaning.

[0045] The substrate W is a thin plate. Typically, the substrate W is a thin, roughly circular plate. The substrate W includes, for example, semiconductor wafers, substrates for liquid crystal displays, substrates for plasma displays, substrates for field emission displays (FEDs), substrates for optical discs, substrates for magnetic disks, substrates for optical disc drives, substrates for photomasks, ceramic substrates, and substrates for solar cells. For example, the substrate W has a pattern for forming a three-dimensional flash memory (e.g., a three-dimensional NAND flash memory). In the following description, as an example, the substrate W is a semiconductor wafer.

[0046] The substrate processing apparatus 100 processes multiple substrates W uniformly. Alternatively, the substrate processing apparatus 100 can process a predetermined number of substrates W sequentially from a large number of substrates W. The predetermined number is an integer greater than or equal to 1. Here, the substrate processing apparatus 100 processes multiple substrates W uniformly. Specifically, the substrate processing apparatus 100 processes multiple substrates W in batches. For example, a batch may contain 25 substrates W. Alternatively, the number of substrates W in a batch may be 50 or 100.

[0047] For example, the substrate processing apparatus 100 performs an etching process on the patterned surface of the substrate W, which includes a silicon substrate, to etch a silicon oxide film (SiO2 film) and a silicon nitride film (SiN film). In this etching process, either the silicon oxide film or the silicon nitride film is removed from the surface of the substrate W.

[0048] like Figure 1 As shown, the substrate processing apparatus 100 includes multiple storage units 102, input units 104, dispensing units 106, transfer mechanisms 120, buffer units BU, first conveying devices CTC, second conveying devices WTR, processing units 130, and control devices 190.

[0049] The processing unit 130 includes a first processing device 140, a second processing device 150, and a third processing device 200. The first processing device 140, the second processing device 150, and the third processing device 200 are arranged in one direction. For example, the first processing device 140, the second processing device 150, and the third processing device 200 are adjacent to the transport path of the first conveying device CTC, and are arranged from the nearest point on the transport path of the first conveying device CTC in the order of the third processing device 200, the first processing device 140, and the second processing device 150. Therefore, the first processing device 140 is located between the second processing device 150 and the third processing device 200.

[0050] Here, the first processing device 140 performs chemical treatment on the substrate W, the second processing device 150 performs rinsing treatment on the substrate W, and the third processing device 200 performs drying treatment on the substrate W.

[0051] Multiple storage sections 102 respectively house multiple substrates W. Each substrate W is housed in a horizontal position within the storage section 102. The storage section 102 is, for example, a front-opening unified pod (FOUP).

[0052] The receiving section 102, placed in the input section 104, receives the substrate W that has not yet been processed by the processing section 130. The input section 104 includes a plurality of mounting stages 104a. Here, the two receiving sections 102 are respectively placed on the two mounting stages 104a.

[0053] The receiving section 102, placed in the dispensing section 106, receives the substrate W processed by the processing section 130. The dispensing section 106 includes multiple mounting stages 106a. Two receiving sections 102 are respectively placed on two mounting stages 106a. The dispensing section 106 receives the processed substrate W into the receiving section 102 and dispenses it together with the receiving section 102.

[0054] The buffer unit BU is disposed adjacent to the input section 104 and the dispensing section 106. The buffer unit BU receives the receiving section 102, along with the substrate W, placed in the input section 104, and places the receiving section 102 on a shelf (not shown). Furthermore, the buffer unit BU receives the processed substrate W and stores it in the receiving section 102, placing the receiving section 102 on the shelf. A transfer mechanism 120 is disposed within the buffer unit BU.

[0055] The transfer mechanism 120 transfers the receiving section 102 between the input section 104 and the dispensing section 106 and the shelf. Furthermore, the transfer mechanism 120 only transfers substrates W to the first conveying device CTC. That is, the transfer mechanism 120 performs batch transfers of substrates W to the first conveying device CTC.

[0056] After receiving a batch of unprocessed substrates W from the transfer mechanism 120, the first transfer device CTC changes the orientation of the substrates W from a horizontal to a vertical position and hands them over to the second transfer device WTR. Furthermore, after receiving a batch of processed substrates W from the second transfer device WTR, the first transfer device CTC changes the orientation of the substrates W from a vertical to a horizontal position and hands them over to the transfer mechanism 120.

[0057] The second conveying device WTR can move from the third processing device 200 to the second processing device 150 along the long side of the substrate processing device 100. The second conveying device WTR is capable of moving batches of substrates W into and out of the first processing device 140, the second processing device 150 and the third processing device 200.

[0058] The first processing device 140 includes a processing tank for storing the drug solution. Figure 1 (Not shown in the figure). The first processing apparatus 140 immerses the substrate W in a solution stored in a processing tank to process multiple substrates W.

[0059] The solutions may include, for example, dilute hydrofluoric acid (DHF), hydrofluoric acid (HF), nitrofluoric acid (a mixture of hydrofluoric acid and nitric acid (HNO3)), buffered hydrofluoric acid (BHF), ammonium fluoride, HFEG (a mixture of hydrofluoric acid and ethylene glycol), phosphoric acid (H3PO4), sulfuric acid, acetic acid, nitric acid, hydrochloric acid, ammonia, hydrogen peroxide, organic acids (e.g., citric acid, oxalic acid), organic bases (e.g., tetramethylammonium hydroxide (TMAH)), sulfuric acid peroxide mixture (SPM), ammonia peroxide mixture (SC1), hydrochloric acid peroxide mixture (SC2), isopropanol (IPA), surfactants, preservatives, or hydrophobic agents.

[0060] The second processing device 150 is configured adjacent to the first processing device 140. The second processing device 150 includes a processing tank for storing the rinsing solution. Figure 1 (Not shown in the figure). The second processing apparatus 150 immerses the substrate W in a rinsing solution stored in a processing tank to perform a rinsing process on multiple substrates W.

[0061] The rinsing solution can be any of the following: pure water (deionized water, DIW), carbonated water, electrolyzed ionized water, hydrogen water, ozone water, or hydrochloric acid water diluted to a concentration of approximately 10 ppm to 100 ppm. For example, pure water is deionized water.

[0062] The third processing apparatus 200 receives batches of multiple substrates W and performs a drying process on the multiple substrates W. The third processing apparatus 200 supplies IPA and a hydrophobic agent to the substrates W for drying. An example of the third processing apparatus 200 will be described later.

[0063] The control device 190 controls various operations of the substrate processing device 100. Specifically, the control device 190 controls the transfer mechanism 120, the first transfer device CTC, the second transfer device WTR, and the processing unit 130. The control device 190 is, for example, a computer.

[0064] The control device 190 includes a control unit 192 and a storage unit 194. The control unit 192 has a processor. The control unit 192 may have, for example, a central processing unit (CPU). Alternatively, the control unit 192 may also have a general-purpose processor.

[0065] Storage unit 194 stores data and computer programs. The data includes recipe data. The recipe data contains information representing multiple recipes. Each recipe specifies the processing content and process for substrate W.

[0066] Storage unit 194 includes a main storage device and an auxiliary storage device. The main storage device is, for example, a semiconductor memory. The auxiliary storage device is, for example, a semiconductor memory and / or a hard disk drive. Storage unit 194 may also include removable media. Storage unit 194 is equivalent to an example of a non-transitory computer-readable storage medium.

[0067] The storage unit 194 stores a computer program with a predefined flow. The substrate processing apparatus 100 operates according to the flow defined by the computer program. The control unit 192 executes the computer program stored in the storage unit 194 to perform substrate processing operations. The processor of the control unit 192 controls the transfer mechanism 120, the first transfer device CTC, the second transfer device WTR, and the processing unit 130 by executing the computer program stored in the storage unit 194.

[0068] Next, refer to Figure 1 as well as Figure 2 The substrate processing flow in the substrate processing apparatus 100 of this embodiment will be explained. Figure 2 This is a flowchart of substrate processing in the substrate processing apparatus 100.

[0069] like Figure 2 As shown, in step S102, substrate W is loaded. For example, the receiving section 102 containing unprocessed substrate W is placed in the input section 104. The transfer mechanism 120 receives the receiving section 102 placed in the input section 104, extracts a batch of substrate W from the receiving section 102, and hands it over to the first transfer device CTC. The first transfer device CTC hands over the received batch of substrate W to the second transfer device WTR.

[0070] In step S104, the substrate W is treated with a chemical solution. For example, the second transfer device WTR transfers multiple substrates W into the first processing device 140. The first processing device 140 immerses the substrates W in a chemical solution stored in a processing tank to treat the substrates W using the chemical solution. Subsequently, the second transfer device WTR removes multiple substrates W from the first processing device 140.

[0071] In step S106, the substrate W is subjected to a rinsing process. For example, the second conveying device WTR conveys multiple substrates W into the second processing device 150. The second processing device 150 immerses the substrates W in a rinsing solution stored in a processing tank and processes the substrates W using the rinsing solution. Subsequently, the second conveying device WTR removes multiple substrates W from the second processing device 150.

[0072] In step S108, the substrate W is dried. For example, the second conveying device WTR moves multiple substrates W into the third processing device 200. The third processing device 200 dries the substrates W. Subsequently, the second conveying device WTR removes multiple substrates W from the third processing device 200.

[0073] In step S110, when the second conveying device WTR delivers a batch of processed substrates W to the first conveying device CTC, the first conveying device CTC changes the orientation of the substrates W from vertical to horizontal and hands them over to the transfer mechanism 120. The transfer mechanism 120 stores the substrates W in the storage section 102 and hands the storage section 102 over to the distribution section 106. Subsequently, the distribution section 106, together with the storage section 102 containing the processed substrates W, performs distribution.

[0074] According to the substrate processing apparatus 100 of this embodiment, multiple substrates W can be sequentially subjected to chemical treatment, rinsing treatment and drying treatment.

[0075] Reference Figure 3 (a) and Figure 3 (b) will be used to describe the first processing device 140. Figure 3 (a) and Figure 3 (b) is a schematic perspective view of the first processing apparatus 140 in the substrate processing apparatus 100 of this embodiment. Figure 3 (a) and Figure 3 (b) is a schematic perspective view of the first processing device 140 in this embodiment. Figure 3 (a) is a schematic perspective view of the substrate W before it is immersed in the chemical solution L1 in the processing tank 142. Figure 3 (b) is a schematic perspective view of the substrate W after it has been immersed in the solution L1 in the treatment tank 142.

[0076] Solution L1 may also contain phosphoric acid (H3PO4). Solution L1 may include, for example, an aqueous solution of phosphoric acid, a liquid containing additives in the aqueous solution of phosphoric acid, a mixed acid containing phosphoric acid, or a mixed acid containing both phosphoric acid and additives. For example, if a solution at approximately 157°C (hereinafter referred to as "phosphoric acid solution") prepared by mixing approximately 89% by weight of phosphoric acid (H3PO4) with approximately 11% by weight of water (deionized water) is used as solution L1, the silicon nitride film (SiN film) can be removed from the surface of substrate W. In other words, if a solution free of impurities and with high temperature and high acid concentration is used as solution L1, solution L1 will dissolve silicon (Si4+). Furthermore, the type of solution L1 is not particularly limited as long as it can process substrate W. Moreover, the temperature of solution L1 is not particularly limited.

[0077] The first processing apparatus 140 includes a processing tank 142, a substrate holding section 144, and a solution supply section 146. The processing tank 142 stores a solution L1 for processing the substrate W. The solution supply section 146 supplies the solution L1 to the processing tank 142.

[0078] The substrate holding portion 144 holds the substrate W. The normal direction of the main surface of the substrate W held by the substrate holding portion 144 is parallel to the Y direction. Multiple substrates W are arranged in a row along the Y direction. In other words, the multiple substrates W are arranged approximately parallel to the horizontal direction. Moreover, the normal of each of the multiple substrates W extends along the Y direction, and the multiple substrates W are spread out in the X and Z directions respectively. The substrate holding portion 144 moves the substrate W while holding it. For example, while holding the substrate W, the substrate holding portion 144 moves vertically upward or downward along the vertical direction.

[0079] Typically, the substrate holding section 144 holds multiple substrates W uniformly. Here, the substrate holding section 144 holds substrates W arranged in a row along the Y direction.

[0080] Specifically, the substrate holding section 144 includes a lifter. The substrate holding section 144 moves vertically upward or downward while holding a plurality of substrates W. As the substrate holding section 144 moves vertically downward, the plurality of substrates W held by the substrate holding section 144 are immersed in a solution L1 stored in the processing tank 142.

[0081] Figure 3 In (a), the substrate holding section 144 is located above the processing tank 142. The substrate holding section 144 descends vertically (in the Z direction) while holding multiple substrates W. As a result, the multiple substrates W are inserted into the processing tank 142.

[0082] like Figure 3 As shown in (b), when the substrate holding section 144 descends to the processing tank 142, a plurality of substrates W are immersed in the solution L1 in the processing tank 142. The substrate holding section 144 immerses a plurality of substrates W, which are arranged at predetermined intervals, in the solution L1 stored in the processing tank 142.

[0083] The substrate holding portion 144 includes a body plate 144a and a holding rod 144b. The body plate 144a is a plate extending in the vertical direction (Z direction). The holding rod 144b extends from one of the main surfaces of the body plate 144a in the horizontal direction (Y direction). Figure 3 (a) and Figure 3In (b), three retaining rods 144b extend horizontally from one of the main surfaces of the body plate 144a. Multiple substrates W are arranged neatly at predetermined intervals and held in an upright (vertical) position by the retaining rods 144b abutting against the lower edge of each substrate W.

[0084] The substrate holding section 144 may also include a lifting unit 144c. The lifting unit 144c moves the body plate 144a to a position below the plurality of substrates W held by the holding rod 144b within the processing groove 142. Figure 3 The position shown in (b) is above the processing tank 142, where the plurality of substrates W held by the holding rod 144b are located. Figure 3 The body plate 144a is moved between the positions shown in (a). Thus, by using the lifting unit 144c to move the body plate 144a to the lower position, the multiple substrates W held by the holding rod 144b are immersed in the liquid L1.

[0085] Reference Figure 4 (a) and Figure 4 (b) will be used to describe the second processing device 150. Figure 4 (a) and Figure 4 (b) is a schematic perspective view of the second processing device 150 in the substrate processing apparatus 100 of this embodiment.

[0086] The second processing apparatus 150 includes a processing tank 152, a substrate holding section 154, and a rinsing solution supply section 156. The processing tank 152 stores rinsing solution L2 for processing the substrate W. The rinsing solution supply section 156 supplies rinsing solution L2 to the processing tank 152.

[0087] The substrate holding portion 154 holds the substrate W. The normal direction of the main surface of the substrate W held by the substrate holding portion 154 is parallel to the Y direction. Multiple substrates W are arranged in a row along the Y direction. In other words, the multiple substrates W are arranged approximately parallel to the horizontal direction. Moreover, the normal of each of the multiple substrates W extends along the Y direction, and the multiple substrates W are unfolded in the X and Z directions respectively. The substrate holding portion 154 moves the substrate W while holding it. For example, while holding the substrate W, the substrate holding portion 154 moves vertically upward or downward along the vertical direction.

[0088] Typically, the substrate holding section 154 uniformly holds multiple substrates W. Here, the substrate holding section 154 holds substrates W arranged in a row along the Y direction.

[0089] Specifically, the substrate holding section 154 includes a lifter. The substrate holding section 154 moves vertically upward or downward while holding multiple substrates W. As the substrate holding section 154 moves vertically downward, the multiple substrates W held by the substrate holding section 154 are immersed in the rinsing solution L2 stored in the processing tank 152.

[0090] Figure 4 In (a), the substrate holding section 154 is located above the processing tank 152. The substrate holding section 154 descends vertically (in the Z direction) while holding multiple substrates W. As a result, the multiple substrates W are inserted into the processing tank 152.

[0091] like Figure 4 As shown in (b), when the substrate holding section 154 descends to the processing tank 152, a plurality of substrates W are immersed in the rinsing liquid L2 in the processing tank 152. The substrate holding section 154 immerses a plurality of substrates W, which are arranged at predetermined intervals, in the rinsing liquid L2 stored in the processing tank 152.

[0092] The substrate holding portion 154 includes a body plate 154a and a holding rod 154b. The body plate 154a is a plate extending in the vertical direction (Z direction). The holding rod 154b extends from one of the main surfaces of the body plate 154a in the horizontal direction (Y direction). Figure 4 (a) and Figure 4 In (b), three retaining rods 154b extend horizontally from one of the main surfaces of the body plate 154a. Multiple substrates W are arranged neatly at predetermined intervals and held in an upright (vertical) position by the retaining rods 154b abutting against the lower edge of each substrate W.

[0093] The substrate holding section 154 may also include a lifting unit 154c. The lifting unit 154c positions the body plate 154a below the plurality of substrates W held by the holding rod 154b within the processing groove 152. Figure 4 The position shown in (b) is above the processing tank 152, where the plurality of substrates W held by the holding rod 154b are located. Figure 4 The body plate 154a is moved between the positions shown in (a). Thus, by using the lifting unit 154c to move the body plate 154a to the lower position, the multiple substrates W held by the holding rod 154b are immersed in the rinsing liquid L2.

[0094] Next, refer to Figure 5 (a) and Figure 5 (b) will be used to explain the third processing device 200 in the substrate processing apparatus 100 of this embodiment. Figure 5 (a) and Figure 5 (b) is a schematic diagram of the third processing device 200.

[0095] like Figure 5 (a) and Figure 5 As shown in (b), the third processing apparatus 200 includes a chamber 210, a substrate holding section 220, a processing tank 230, a liquid supply section 232, an isopropanol supply section 240, an inactive gas supply section 250, a hydrophobic agent supply section 260, and a control device 290. The control device 290 controls the substrate holding section 220, the liquid supply section 232, the isopropanol supply section 240, the inactive gas supply section 250, and the hydrophobic agent supply section 260. The control device 290 can also further control the chamber 210. Furthermore, the control device 290 can also control the environment within the chamber 210 and / or the storage liquid L stored in the processing tank 230. Additionally, the control device 290 can also serve as... Figure 1 A portion of the control device 190 shown functions. Alternatively, the control device 290 may also be connected to... Figure 1 The control device 190 shown operates in conjunction with the control unit.

[0096] The chamber 210 has an internal space. The space of the chamber 210 is defined by its bottom surface, side surface, and top surface. Typically, the chamber 210 has a sealed structure. At least a portion of the substrate holding part 220, the processing tank 230, the liquid supply part 232, the IPA supply part 240, the inactive gas supply part 250, and the hydrophobic agent supply part 260 are disposed within the chamber 210.

[0097] The chamber 210 has a body portion 212 and a cover 214. The body portion 212 defines the space by its bottom surface, side surface, and top surface. The top surface of the body portion 212 has a partial opening. The opening of the body portion 212 is covered by the cover 214. When the substrate W is inserted into the chamber 210 or removed from the chamber 210, the cover 214 moves relative to the body portion 212, thereby forming a passage for the substrate W.

[0098] The substrate holding portion 220 holds the substrate W. The normal direction of the main surface of the substrate W held by the substrate holding portion 220 is parallel to the Y direction. Multiple substrates W are arranged in a row along the Y direction. In other words, the multiple substrates W are arranged approximately parallel to the horizontal direction. Moreover, the normal of each of the multiple substrates W extends along the Y direction, and the multiple substrates W are unfolded in the X and Z directions respectively. The substrate holding portion 220 moves the substrate W while holding it. For example, the substrate holding portion 220 moves vertically upward or downward while holding the substrate W.

[0099] Typically, the substrate holding section 220 holds multiple substrates W. Here, the multiple substrates W form a substrate row arranged in a line along the Y direction. Therefore, the substrate holding section 220 holds multiple substrates W arranged in a substrate row. Alternatively, the substrate holding section 220 may also hold only one substrate W.

[0100] Specifically, the substrate holding section 220 includes a lifter. The substrate holding section 220 moves vertically upward or downward while holding multiple substrates W. As the substrate holding section 220 moves vertically downward, the multiple substrates W held by the substrate holding section 220 are immersed in a storage liquid L stored in the processing tank 230.

[0101] like Figure 5 As shown in (a), the substrate holding portion 220 is located above the processing tank 230. Figure 5 As shown in (b), the substrate holding section 220 descends vertically (in the Z direction) while holding multiple substrates W. This allows the multiple substrates W to be inserted into the processing tank 230.

[0102] When the storage liquid L is stored in the processing tank 230, when the substrate holding part 220 descends into the processing tank 230 while holding the substrate W, multiple substrates W are immersed in the storage liquid L in the processing tank 230. The substrate holding part 220 immerses multiple substrates W, which are arranged at predetermined intervals, in the storage liquid L stored in the processing tank 230.

[0103] The substrate holding portion 220 has a body plate 222 and a holding rod 224. The body plate 222 is a plate that extends in the vertical direction (Z direction). The holding rod 224 extends from one of the main surfaces of the body plate 222 in the horizontal direction (Y direction). Figure 5 (a) and Figure 5 In (b), three retaining rods 224 extend horizontally from one of the main surfaces of the body plate 222. Multiple substrates W are arranged neatly at predetermined intervals and held in an upright (vertical) position by the retaining rods 224 abutting against the lower edge of each substrate W.

[0104] The substrate holding section 220 may also include a lifting unit 226. The lifting unit 226 positions the body plate 222 below the plurality of substrates W held by the holding rod 224 within the processing groove 230. Figure 5 The position shown in (b) is above the processing tank 230, where the plurality of substrates W held by the holding rod 224 are located. Figure 5 The body plate 222 is moved between the positions shown in (a). Thus, by using the lifting unit 226 to move the body plate 222 to the lower position, the plurality of substrates W held by the holding rod 224 are immersed in the storage liquid L.

[0105] The processing tank 230 stores a storage liquid L for processing the substrate W. With the storage liquid L stored in the processing tank 230, the substrate holding section 220 immerses the substrate W in the storage liquid L of the processing tank 230, thereby enabling the substrate W to be processed using the storage liquid L. For example, the capacity of the processing tank 230 is 5L or more and 100L or less.

[0106] The storage solution L can also be water. As an example, the storage solution L can also be deionized water (DIW). Furthermore, the storage solution L can also be isopropyl alcohol (IPA). Moreover, the storage solution L can also be a mixture of rinsing solution and IPA.

[0107] In addition, in this specification, IPA diluted by mixing IPA with eluent is sometimes referred to as diluted IPA. For example, diluted IPA can also be generated by mixing IPA with eluent at a volume ratio of 1:1 to 1:1000. Hereinafter, diluted IPA will sometimes be referred to as "dIPA".

[0108] For example, diluted IPA is IPA diluted with DIW. In this case, diluted IPA is a mixture of IPA and DIW.

[0109] The liquid supply unit 232 supplies liquid to the treatment tank 230. Through the liquid supply from the liquid supply unit 232, the treatment tank 230 stores the storage liquid L.

[0110] For example, the liquid supply unit 232 can also supply water. As another example, the liquid supply unit 232 can also supply DIW. Moreover, the liquid supply unit 232 can also supply isopropyl alcohol (IPA). Furthermore, the liquid supply unit 232 can also supply a mixture of rinsing fluid and IPA.

[0111] Typically, the liquid supply section 232 is disposed in the processing tank 230. For example, the liquid supply section 232 is disposed below the processing tank 230. The liquid supply section 232 is located on the vertically lower side of the substrate W, which is immersed in the storage liquid L in the processing tank 230 by the downward movement of the substrate holding section 220.

[0112] The liquid supply unit 232 supplies liquid to the processing tank 230. Specifically, the liquid supply unit 232 supplies the storage liquid L stored in the processing tank 230. By supplying the storage liquid L to the processing tank 230 through the liquid supply unit 232, the processing tank 230 is able to store the storage liquid L. Furthermore, it is preferable that the liquid supply unit 232 supplies liquid obliquely upward relative to the processing tank 230.

[0113] Additionally, gas can also be supplied to the processing tank 230. For example, by supplying an inactive gas to the storage liquid L in the processing tank 230, the processing of the substrate W by the storage liquid L can be promoted.

[0114] The isopropanol supply unit 240 supplies isopropanol vapor to the chamber 210. In this specification, isopropanol is sometimes referred to as IPA, and the isopropanol supply unit 240 is sometimes referred to as IPA supply unit 240.

[0115] The IPA supply unit 240 supplies IPA vapor to the substrate W located above the processing tank 230. This allows the substrate W to be processed using IPA. The IPA supply unit 240 can also supply IPA vapor in a downward direction.

[0116] The inactive gas supply unit 250 supplies inactive gas into the chamber 210. By supplying inactive gas into the chamber 210, an inactive gas environment can be created within the chamber 210. This reduces the oxygen concentration within the chamber 210. Furthermore, by supplying inactive gas into the chamber 210 through the inactive gas supply unit 250, backflow of exhaust gas and drained liquid from the chamber 210 can be suppressed. The inactive gas supply unit 250 can also supply inactive gas in a downward direction.

[0117] Furthermore, the inactive gas supply unit 250 supplies inactive gas to the substrate W located above the processing tank 230. As a result, the substrate W can be dried.

[0118] Inactive gases include nitrogen. Alternatively, inactive gases may also include argon.

[0119] The hydrophobic agent supply unit 260 supplies hydrophobic agent SMT vapor into the chamber 210. The hydrophobic agent supply unit 260 also supplies hydrophobic agent SMT vapor to the substrate W located above the processing tank 230. This allows for hydrophobic treatment of the substrate W. The hydrophobic agent supply unit 260 can also supply hydrophobic agent SMT vapor in a downward direction.

[0120] Hydrophobic agents in surface mount technology (SMT) can be, for example, silicon-based or metal-based hydrophobic agents. Silicon-based hydrophobic agents hydrophobize (repel) silicon or silicon-containing compounds. Metal-based hydrophobic agents hydrophobize (repel) metals or metal-containing compounds.

[0121] Silicon-based hydrophobic agents are, for example, silane coupling agents. Silane coupling agents include, for example, at least one of hexamethyldisilazane (HMDS), tetramethylsilane (TMS), fluorinated alkylchlorosilanes, alkyldisilazanes, and non-chlorinated hydrophobic agents. Non-chlorinated hydrophobic agents include, for example, at least one of dimethylsilyldimethylamine, dimethylsilyldiethylamine, hexamethyldisilazane, tetramethyldisilazane, bis(dimethylamino)dimethylsilane, N,N-dimethylaminotrimethylsilane, N-(trimethylsilyl)dimethylamine, and organosilane compounds.

[0122] Metal-based hydrophobic agents include, for example, at least one of amines having hydrophobic groups and organosilicon compounds.

[0123] The hydrophobic agent SMT can also be diluted with a solvent that is compatible with hydrophilic organic solvents. Examples of solvents include IPA or propylene glycol monomethyl ether acetate (PGMEA).

[0124] In addition, within the chamber 210, above the processing tank 230, the following components are arranged in the order of hydrophobic agent supply unit 260, IPA supply unit 240, and inactive gas supply unit 250, starting from near the processing tank 230.

[0125] The third processing device 200 may also include a drain section 270. The drain section 270 drains the stored liquid L from the processing tank 230. The processing tank 230 can be emptied by the drain section 270.

[0126] Next, refer to Figure 5 (a) and Figure 5 (b) and Figure 6 The drying process in the substrate processing apparatus 100 of this embodiment will be explained. Figure 6 This is a flowchart of the drying process in the substrate processing apparatus 100.

[0127] like Figure 6As shown, in step S202, the substrate W is immersed in dIPA stored in the processing tank 230. At this time, the processing tank 230 stores dIPA. For example, the substrate holding part 220 moves vertically downward while holding the substrate W to immerse the substrate W in dIPA. Alternatively, the storage liquid L can be changed to dIPA while the substrate holding part 220 moves vertically downward while holding the substrate W to immerse the substrate W in the storage liquid L of the processing tank 230. For example, while the substrate W is immersed in the rinsing liquid (DIW in one example) that is the storage liquid L in the processing tank 230, the liquid supply part 232 supplies IPA to the processing tank 230, thereby enabling the storage liquid L to be changed to dIPA while the substrate W is immersed.

[0128] In step S204, the substrate W is processed using IPA. For example, after the substrate holding unit 220 moves to the upper position while holding the substrate W, the IPA supply unit 240 supplies IPA vapor to the substrate W. Thus, the substrate W can be processed using IPA. Preferably, the substrate holding unit 220 moves to a position where the substrate W frequently comes into contact with the IPA vapor supplied from the IPA supply unit 240.

[0129] In step S206, hydrophobic agent SMT vapor is supplied to the substrate W to perform a hydrophobic treatment on the substrate W. For example, with the substrate holding portion 220 in the upper position, the hydrophobic agent supply portion 260 supplies hydrophobic agent SMT vapor to the substrate W. This allows for hydrophobic treatment of the substrate W. Furthermore, the substrate holding portion 220 can also be moved to the upper position to ensure that the substrate W comes into more contact with the hydrophobic agent SMT vapor supplied from the hydrophobic agent supply portion 260.

[0130] In step S208, the substrate W is processed using an IPA. For example, the substrate holding section 220 is positioned at the top. The IPA supply section 240 supplies IPA vapor to the substrate W. Thus, the substrate W can be processed using an IPA. In addition, the substrate holding section 220 can also be moved at the top position to allow the substrate W to come into more contact with the IPA vapor supplied from the IPA supply section 240.

[0131] In step S210, an inactive gas is supplied to the substrate W. The substrate holding section 220 is positioned at the upper position. The inactive gas supply section 250 supplies the inactive gas to the substrate W. This allows the substrate W to be dried. Furthermore, the substrate holding section 220 can also be moved to the upper position to ensure that the substrate W comes into more contact with the inactive gas supplied from the inactive gas supply section 250.

[0132] According to this embodiment, after immersing the substrate W in dIPA, the substrate W is treated with IPA, and then hydrophobic treatment is performed on the substrate W. Thus, by immersing the substrate W in dIPA, even when the substrate W has a pattern with a relatively high aspect ratio, the surface of the substrate W can be sufficiently replaced with IPA in the finer parts of the pattern, and subsequently, the surface of the substrate W can be replaced with the hydrophobic agent. Typically, the hydrophobic agent has poor affinity with the rinsing solution (e.g., water), but since the storage solution L is dIPA, the hydrophobic agent can be fully penetrated across the entire surface of the substrate W. Therefore, according to this embodiment, the pattern degradation of the substrate W can be better suppressed.

[0133] Next, refer to Figure 5 (a)~ Figure 7 (e) will be used to explain the drying process in the substrate processing apparatus 100 of this embodiment. Figure 7 (a)~ Figure 7 (e) is a schematic diagram illustrating the drying process in the substrate processing apparatus 100.

[0134] like Figure 7 As shown in (a), the substrate W is immersed in dIPA stored in the processing tank 230. In addition, in this specification, when the storage liquid L stored in the processing tank 230 is dIPA, the storage liquid L can be referred to as storage liquid Ld.

[0135] For example, with the substrate holding section 220 positioned above the chamber 210, a storage liquid Ld is stored in the processing tank 230. Subsequently, the substrate holding section 220 receives the substrate W. Typically, the substrate W received by the substrate holding section 220 has been rinsed with a rinsing solution (e.g., DIW). Then, the substrate holding section 220 moves downward from above the chamber 210, thereby immersing the substrate W in the storage liquid Ld stored in the processing tank 230.

[0136] Furthermore, the concentration of the storage liquid Ld can be increased during the period when the substrate W is immersed in the stored storage liquid Ld. For example, the liquid supply unit 232 further supplies IPA to the storage liquid Ld in the processing tank 230, thereby increasing the concentration of the storage liquid Ld. For example, when the immersion time of the substrate W exceeds a threshold, the concentration of the storage liquid Ld can be higher than when the immersion time is below the threshold. Alternatively, the concentration of the storage liquid Ld can be continuously increased as the immersion time of the substrate W increases.

[0137] like Figure 7As shown in (b), IPA vapor is supplied to the substrate W to perform IPA treatment on the substrate W. Specifically, after the substrate holding unit 220 moves to the upper position while holding the substrate W, the IPA supply unit 240 supplies IPA vapor to the substrate W. Thus, the substrate W can be treated with IPA. In addition, the storage liquid Ld in the processing tank 230 is discharged here.

[0138] like Figure 7 As shown in (c), hydrophobic agent SMT vapor is supplied to substrate W to perform hydrophobic treatment on substrate W. With substrate holding part 220 in the upper position, hydrophobic agent supply part 260 supplies hydrophobic agent SMT vapor to substrate W. Thus, hydrophobic treatment can be performed on substrate W.

[0139] like Figure 7 As shown in (d), IPA vapor is supplied to the substrate W to perform IPA treatment on the substrate W. With the substrate holding part 220 in the upper position, the IPA supply part 240 supplies IPA vapor to the substrate W. As a result, IPA treatment can be performed on the substrate W.

[0140] like Figure 7 As shown in (e), an inactive gas is supplied to the substrate W. With the substrate holding portion 220 in the upper position, the inactive gas supply portion 250 supplies the inactive gas to the substrate W. As a result, the substrate W can be dried.

[0141] According to the substrate processing apparatus 100 of this embodiment, after immersing the substrate W in dIPA, the substrate W is subjected to IPA treatment, and then a hydrophobic agent SMT is supplied to the substrate W. Therefore, before the supply of the hydrophobic agent SMT, IPA can be adhered to the entire surface of the substrate W, and thus, by supplying the hydrophobic agent SMT, the hydrophobic agent SMT can be replaced throughout the entire surface of the substrate W. Therefore, both the pattern degradation of the substrate W can be suppressed, and the chemical solution and / or rinsing solution adhering to the substrate W can be sufficiently dried.

[0142] Moreover, such as Figure 7 (d) to Figure 7 As shown in (e), the substrate holding section 220 can also move to an upper position while holding the substrate W, depending on whether vapor or gas is supplied from the IPA supply section 240, the inactive gas supply section 250, or the hydrophobic agent supply section 260. Therefore, the substrate W can be efficiently processed using the vapor or gas supplied from the IPA supply section 240, the inactive gas supply section 250, and the hydrophobic agent supply section 260 while the IPA supply section 240, the inactive gas supply section 250, and the hydrophobic agent supply section 260 are fixedly arranged.

[0143] Next, refer to Figure 8 as well as Figure 9 The third processing apparatus 200 in the substrate processing apparatus 100 of this embodiment will be explained. Figure 8 This is a schematic diagram of the third processing device 200.

[0144] The substrate W has a pattern forming surface on which a pattern is formed. The pattern is formed on the surface of the substrate W by a wet etching process. (See reference...) Figure 1 As described above, the substrate processing apparatus 100 includes a first processing apparatus 140 and a second processing apparatus 150 in addition to the third processing apparatus 200. For example, after the substrate W is etched by the first processing apparatus 140, the substrate W is rinsed by the second processing apparatus 150, and then the substrate W is transported (moved into) the third processing apparatus 200.

[0145] like Figure 8 As shown, the third processing apparatus 200 includes a chamber 210, a substrate holding section 220, a processing tank 230, a liquid supply section 232, an inactive gas supply section 250, a hydrophobic agent supply section 260, and a drain section 270. The chamber 210 houses at least a portion of the substrate holding section 220, the processing tank 230, the liquid supply section 232, the IPA supply section 240, the inactive gas supply section 250, the hydrophobic agent supply section 260, and the drain section 270.

[0146] The chamber 210 has a body portion 212 and a cover 214. The cover 214 covers the opening at the top of the body portion 212. The cover 214 is openable and closable relative to the body portion 212.

[0147] The opening / closing unit 216 opens and closes the cover 214. That is, the opening / closing unit 216 changes the cover 214 between an open state and a closed state. By opening and closing the cover 214 relative to the body portion 212, the opening at the top of the chamber 210 changes between a closed state and an open state. The opening / closing unit 216 has a drive source and an opening / closing mechanism; the drive source drives the opening / closing mechanism to open and close the cover 214. The drive source may include, for example, a motor. The opening / closing mechanism may include, for example, a rack and pinion mechanism.

[0148] The substrate holding part 220 includes a body plate 222, a holding rod 224, and a lifting unit 226. The holding rod 224 is mounted on the body plate 222.

[0149] The lifting unit 226 raises and lowers the body plate 222 and the holding rod 224. The lifting unit 226 raises and lowers the body plate 222 and the holding rod 224, thereby raising and lowering the substrate W held by the holding rod 224. The lifting unit 226 has a drive source and a lifting mechanism. The drive source drives the lifting mechanism to raise and lower the substrate holding portion 220. The drive source may include, for example, a motor. The lifting mechanism may include, for example, a rack and pinion mechanism or a ball screw.

[0150] When the lifting unit 226 moves the substrate W into the chamber 210 and moves the substrate W out of the chamber 210, it raises the body plate 222 and the holding rod 224 to above the chamber 210. Furthermore, when the substrate W is immersed in the storage liquid L in the processing tank 230, the lifting unit 226 lowers the substrate W, body plate 222, and holding rod 224 vertically downwards. Figure 8 In the diagram, the substrate holding section 220 and the substrate W, which have moved to the lower position, are shown in solid lines, while the substrate holding section 220 and the substrate W, which have moved to the upper position, are shown in dashed lines.

[0151] The control device 290 (control unit 292) controls the opening / closing unit 216 to switch the cover 214 between an open state and a closed state. Specifically, the control device 290 (control unit 292) sets the cover 214 to an open state when the substrate W is moved into the chamber 210 and when the substrate W is moved out of the chamber 210. With the cover 214 in an open state, the opening at the top of the chamber 210 becomes open, making it possible to move the substrate W into and out of the chamber 210. When the substrate W is being processed, the control device 290 (control unit 292) sets the cover 214 to a closed state. With the cover 214 in a closed state, the opening at the top of the chamber 210 becomes closed. As a result, the interior of the chamber 210 becomes a sealed space. The substrate W is processed within this sealed space.

[0152] Treatment tank 230 stores storage solution L. Storage solution L can also be diluted IPA (isopropanol). Furthermore, storage solution L can also be a rinsing solution. Thus, treatment tank 230 stores either rinsing solution or diluted IPA. Diluted IPA refers to IPA that has been diluted. For example, the rinsing solution is deionized water (DIW). In this case, diluted IPA is IPA diluted using DIW. In other words, diluted IPA is a mixture of IPA and DIW.

[0153] The supply unit 232 supplies storage liquid to the treatment tank 230. Specifically, the supply unit 232 supplies at least one of rinsing liquid (DIW) and IPA to the treatment tank 230. The supply unit 232 has nozzles 232a and 232b. Nozzles 232a and 232b are disposed within the treatment tank 230. Nozzles 232a and 232b are arranged parallel to the horizontal direction. Nozzles 232a and 232b spray at least one of rinsing liquid (DIW) and IPA into the treatment tank 230.

[0154] The IPA supply unit 240 supplies IPA vapor into the chamber 210. The IPA supply unit 240 has nozzles 242a and 242b. Nozzles 242a and 242b are disposed inside the chamber 210 and outside the processing tank 230. Nozzles 242a and 242b are arranged parallel to the horizontal direction. Nozzles 242a and 242b eject IPA vapor. In addition to ejecting IPA vapor, nozzles 242a and 242b can also eject inactive gases.

[0155] An inactive gas supply unit 250 supplies inactive gas into the chamber 210. The inactive gas supply unit 250 includes nozzles 252a, 252b, 252c, and 252d. Nozzles 252a, 252b, 252c, and 252d are disposed inside the chamber 210 and outside the processing tank 230. Nozzles 252a and 252b are arranged parallel to the horizontal direction, as are nozzles 252c and 252d. Nozzles 252a, 252b, 252c, and 252d eject inactive gas.

[0156] The hydrophobic agent supply unit 260 supplies hydrophobic agent vapor into the chamber 210. The hydrophobic agent supply unit 260 has nozzles 262a and 262b. Nozzles 262a and 262b are disposed inside the chamber 210 and outside the processing tank 230. Nozzles 262a and 262b are arranged parallel to the horizontal direction. Nozzles 262a and 262b eject hydrophobic agent vapor.

[0157] The drain section 270 discharges the stored liquid L from the treatment tank 230. The drain section 270 can empty the treatment tank 230. Furthermore, the stored liquid L in the treatment tank 230 can be replaced by the supply section 232 and the drain section 270.

[0158] Then, referring to Figure 9 To further explain the third processing device 200. Figure 9 This is a schematic diagram of the third processing apparatus 200 in the substrate processing apparatus 100 of this embodiment.

[0159] like Figure 9As shown, the third processing device 200 also includes an inactive gas supply source NGS, an IPA supply source IPS, a hydrophobic agent supply source SMS, a DIW supply source DS, a pressure reducing unit 280, piping 230a, piping 230c, piping 240a, piping 250a, piping 250c, piping 250s, piping 260a, valves 230b, valve 230d, valve 240b, valve 250b, valve 250d, valve 250t, valve 260b, valve 270b, heater 240c, heater 260c, drain line 270a, and exhaust line 280a.

[0160] DIW is supplied by DS. IPA is supplied by IPS. Inert gas is supplied by NGS. Inert gas is, for example, nitrogen. Hydrophobic agent is supplied by SMS.

[0161] The liquid supply unit 232 includes a pipe 230a, a nozzle 232a, and a nozzle 232b. DIW is supplied from the DIW supply source DS via the pipe 230a. The pipe 230a allows the DIW supplied from the DIW supply source DS to flow to the nozzles 232a and 232b.

[0162] Nozzles 232a and 232b are hollow tubular members with multiple ejection holes. In this embodiment, nozzles 232a and 232b extend along the Y direction. The multiple ejection holes of nozzle 232a are formed at equal intervals in the Y direction. Similarly, the multiple ejection holes of nozzle 232b are formed at equal intervals in the Y direction.

[0163] When DIW is supplied to nozzle 232a via pipe 230a, DIW is ejected into the interior of the processing tank 230 from the plurality of ejection orifices of nozzle 232a. Similarly, when DIW is supplied to nozzle 232b via pipe 230a, DIW is ejected into the interior of the processing tank 230 from the plurality of ejection orifices of nozzle 232b.

[0164] A valve 230b is installed in piping 230a. Valve 230b is an on / off valve that opens and closes the flow path of piping 230a. Valve 230b controls the flow of DIW through piping 230a. Valve 230b also functions as a regulating valve to adjust the flow rate of DIW through piping 230a. Valve 230b is, for example, a solenoid valve. Valve 230b is controlled by a control device 290 (control unit 292).

[0165] For piping 230c, IPA is supplied from the IPA supply source IPS. Piping 230c is connected to piping 230a. That is, piping 230c allows IPA to flow to piping 230a.

[0166] A valve 230d is installed in piping 230c. Valve 230d is an on / off valve that opens and closes the flow path of piping 230c. Like valve 250b, valve 230d controls the flow of IPA through piping 230c. Valve 230d also functions as a regulating valve to adjust the flow rate of IPA through piping 230c. Valve 230d is, for example, a solenoid valve. Valve 230d is controlled by control device 290 (control unit 292).

[0167] When storing DIW in the processing tank 230, the control device 290 (control unit 292) opens valve 230b and closes valve 230d. As a result, DIW is ejected into the processing tank 230 from nozzles 232a and 232b.

[0168] On the other hand, when storing dIPA in the processing tank 230, the control device 290 (control unit 292) opens valves 230b and 230d. With valves 230b and 230d open, IPA flows from pipe 230c into pipe 230a, where it merges with DIW flowing in pipe 230a, generating dIPA within pipe 230a. The dIPA is then supplied to nozzles 232a and 232b via pipe 230a. As a result, dIPA is ejected into the processing tank 230 from nozzles 232a and 232b.

[0169] Furthermore, the control device 290 (control unit 292) adjusts the opening degree of valves 230b and 230d to ensure that the concentration of IPA in dIPA reaches a specified concentration. The specified concentration is 0.3% or more and less than 5%.

[0170] The IPA supply unit 240 includes a piping 240a, nozzles 242a and 242b, and a heater 240c. IPA is supplied from the IPA supply source IPS via piping 240a. The heater 240c is disposed within piping 240a. The heater 240c heats the IPA, causing it to vaporize. That is, the heater 240c generates IPA vapor. Piping 240a allows the IPA vapor to flow to nozzles 242a and 242b.

[0171] Nozzles 242a and 242b are disposed below nozzles 252a and 252b, and below nozzles 252c and 252d. Nozzles 242a and 242b are hollow tubular members with a plurality of ejection holes. In this embodiment, nozzles 242a and 242b extend along the Y direction. The plurality of ejection holes of nozzle 242a are formed at equal intervals in the Y direction. Similarly, the plurality of ejection holes of nozzle 242b are formed at equal intervals in the Y direction.

[0172] When IPA vapor is supplied to nozzle 242a via piping 240a, IPA vapor is ejected into the interior of chamber 210 from multiple ejection holes of nozzle 242a. Similarly, when IPA vapor is supplied to nozzle 242b via piping 240a, IPA vapor is ejected into the interior of chamber 210 from multiple ejection holes of nozzle 242b.

[0173] A valve 240b is installed in piping 240a. Valve 240b is an on / off valve that opens and closes the flow path of piping 240a. Valve 240b is located downstream of heater 240c relative to piping 240a. Valve 240b controls the flow of IPA vapor through piping 240a. Valve 240b also functions as a regulating valve to adjust the flow rate of IPA vapor through piping 240a. Valve 240b is, for example, a solenoid valve. Valve 240b is controlled by control device 290 (control unit 292).

[0174] The inactive gas supply unit 250 includes pipes 250a and 250c, nozzles 252a, 252b, 252c, and 252d. Pipe 250a supplies inactive gas from an inactive gas supply source NGS. Pipe 250a allows the inactive gas supplied from the inactive gas supply source NGS to flow to nozzles 252a and 252b. Similarly, pipe 250c supplies inactive gas from the inactive gas supply source NGS. Pipe 250c allows the inactive gas supplied from the inactive gas supply source NGS to flow to nozzles 252c and 252d.

[0175] The structures of nozzles 252a, 252b, 252c, and 252d are the same as those of nozzles 242a and 242b. Nozzles 252a, 252b, 252c, and 252d eject inactive gas into the interior of chamber 210.

[0176] A valve 250b is installed in piping 250a. Valve 250b is an on / off valve that opens and closes the flow path of piping 250a. Valve 250b controls the flow of inert gas through piping 250a. Specifically, when valve 250b is open, inert gas flows through piping 250a to nozzles 252a and 252b. As a result, inert gas is ejected from nozzles 252a and 252b. When valve 250b is closed, the flow of inert gas is blocked, and the ejection of inert gas from nozzles 252a and 252b ceases.

[0177] Valve 250b also functions as a regulating valve to adjust the flow rate of inactive gas flowing through piping 250a. Valve 250b is, for example, a solenoid valve. Valve 250b is controlled by control device 290 (control unit 292).

[0178] A valve 250d is installed in piping 250c. Valve 250d is an on / off valve that opens and closes the flow path of piping 250c. Valve 250d controls the flow of inert gas through piping 250c. Specifically, when valve 250d is open, inert gas flows through piping 250c to nozzles 252c and 252d. As a result, inert gas is ejected from nozzles 252c and 252d. When valve 250d is closed, the flow of inert gas is blocked, and the ejection of inert gas from nozzles 252c and 252d ceases.

[0179] Valve 250d also functions as a regulating valve to adjust the flow rate of inactive gas flowing through pipe 250c. Valve 250d is, for example, a solenoid valve. Valve 250d is controlled by control device 290 (control unit 292).

[0180] Furthermore, for piping 250s, inert gas is supplied from the inert gas supply source NGS. Piping 250s is connected to piping 240a. That is, piping 250s allows inert gas to flow to piping 240a.

[0181] A valve 250t is installed in piping 250s. Valve 250t is an on / off valve that opens and closes the flow path of piping 250s. Like valve 250b, valve 250t controls the flow of inert gas through piping 250s. Valve 250t also functions as a regulating valve to adjust the flow rate of inert gas through piping 250s. Valve 250t is, for example, a solenoid valve. Valve 250t is controlled by control device 290 (control unit 292).

[0182] When IPA vapor is ejected from nozzles 242a and 242b, control device 290 (control unit 292) opens valve 240b and closes valve 250t. Conversely, when inert gas is ejected from nozzles 242a and 242b, control device 290 (control unit 292) closes valve 240b and opens valve 250t. With valve 250t open, inert gas flows from piping 250s into piping 240a, and is supplied to nozzles 242a and 242b via piping 240a. As a result, inert gas is ejected from nozzles 242a and 242b into the interior of chamber 210.

[0183] The hydrophobic agent supply unit 260 includes a pipe 260a, a nozzle 262a, a nozzle 262b, and a heater 260c. For the pipe 260a, a hydrophobic agent SMT is supplied from a hydrophobic agent supply source SMS. The heater 260c is disposed within the pipe 260a. The heater 260c heats the hydrophobic agent SMT, causing it to vaporize. That is, the heater 260c generates vapor of the hydrophobic agent SMT. The pipe 260a allows the vapor of the hydrophobic agent SMT to flow to the nozzles 262a and 262b.

[0184] Nozzles 262a and 262b are positioned below nozzles 252c and 252d. The structures of nozzles 262a and 262b are the same as those of nozzles 242a and 242b. Like nozzles 242a and 242b, nozzles 262a and 262b eject vapors of the hydrophobic agent SMT into the interior of chamber 210.

[0185] A valve 260b is installed in piping 260a. Valve 260b is an on / off valve that opens and closes the flow path of piping 260a. Valve 260b is located downstream of heater 260c relative to piping 260a. Valve 260b controls the flow of vapor from the hydrophobicating agent SMT flowing through piping 260a. Valve 260b also functions as a regulating valve to adjust the flow rate of vapor from the hydrophobicating agent SMT flowing through piping 260a. Valve 260b is, for example, a solenoid valve. Valve 260b is controlled by control device 290 (control unit 292).

[0186] A drain line 270a is connected to the bottom of the processing tank 230. A valve 270b is installed in the drain line 270a. The valve 270b is an on / off valve that opens and closes the flow path of the drain line 270a. The valve 270b is, for example, a solenoid valve. The valve 270b is controlled by a control device 290 (control unit 292). The control device 290 (control unit 292) closes the valve 270b when storing the storage liquid L in the processing tank 230. Conversely, the control device 290 (control unit 292) opens the valve 270b when discharging the storage liquid L from the processing tank 230. When the valve 270b is open, the storage liquid L stored in the processing tank 230 is discharged from the processing tank 230 to the outside of the chamber 210 via the drain line 270a.

[0187] The pressure-reducing unit 280 reduces the pressure inside the chamber 210. That is, the pressure-reducing unit 280 reduces the pressure inside the chamber 210. The pressure-reducing unit 280 includes, for example, an exhaust pump. The exhaust pump is, for example, a vacuum pump. The pressure-reducing unit 280 is controlled by a control device 290 (control unit 292). Specifically, the pressure-reducing unit 280 is connected to the chamber 210 via an exhaust line 280a. When the cover 214 is closed, the pressure-reducing unit 280 discharges gas from the chamber 210, reducing the pressure inside the chamber 210 to below atmospheric pressure.

[0188] Next, refer to Figures 8 to 13 (d) will be used to explain the drying process performed by the third processing device 200 in the substrate processing apparatus 100 of this embodiment. Figure 10 (a) to Figure 13 (d) is a schematic diagram showing the process of drying treatment carried out by the third processing unit 200.

[0189] like Figure 10 As shown in (a), in step S1, the third processing apparatus 200 remains on standby until the substrate W is inserted into the chamber 210. While waiting for the substrate W to be inserted, the processing tank 230 stores DIW as a storage liquid. In this specification, when the storage liquid L stored in the processing tank 230 is DIW, the storage liquid L is sometimes referred to as storage liquid La. At this time, the substrate holding part 220 is immersed in the storage liquid La.

[0190] Furthermore, it is preferable that nozzles 232a and 232b further supply DIW to the stored liquid La in the treatment tank 230, thereby preventing the stored liquid La in the treatment tank 230 from stagnating. This helps to prevent the treatment tank 230 from being contaminated by dust or other contaminants in the chamber 210.

[0191] like Figure 10 As shown in (b), in step S2, before the substrate W is housed in the chamber 210, the substrate holding portion 220 moves from a lower position to an upper position. Furthermore, nozzles 242a and 242b begin supplying inactive gas into the chamber 210. Nozzles 232a and 232b continue supplying DIW to the processing tank 230.

[0192] like Figure 10 As shown in (c), in step S3, nozzles 232a and 232b stop supplying DIW and discharge the storage liquid La from the treatment tank 230. At this time, nozzles 242a and 242b continue to supply inactive gas into the chamber 210.

[0193] like Figure 10As shown in (d), in step S4, dIPA is supplied to the processing tank 230. Nozzles 232a and 232b supply dIPA to the processing tank 230, thereby storing the storage liquid Ld in the processing tank 230. At this time, nozzles 242a and 242b continue to supply inactive gas into the chamber 210.

[0194] like Figure 10 As shown in (e), in step S5, when the processing tank 230 has stored the storage liquid Ld, nozzles 232a and 232b stop supplying dIPA. At this time, nozzles 242a and 242b continue to supply inactive gas into the chamber 210.

[0195] like Figure 10 As shown in (f), in step S6, the substrate W is immersed in the dIPA stored in the processing tank 230. The substrate holding section 220 receives the substrate W in the upper position and lowers to the lower position while holding the substrate W. At this time, nozzles 242a and 242b continue to supply inactive gas into the chamber 210. However, when the substrate W is lowered from the upper position to the lower position, nozzles 242a and 242b stop supplying inactive gas only when the substrate W passes through, so as to prevent the inactive gas from directly contacting the substrate W.

[0196] In the processing tank 230, nozzles 232a and 232b supply dIPA to the processing tank 230. As a result, an upward flow is formed in the storage liquid Ld in the processing tank 230, and the substrate W immersed in the processing tank 230 is processed efficiently using dIPA.

[0197] like Figure 11 As shown in (a), in step S7, nozzles 232a and 232b stop supplying dIPA. At this time, nozzles 242a and 242b continue to supply inactive gas into chamber 210.

[0198] like Figure 11 As shown in (b), in step S8, while nozzles 242a and 242b continue to supply inactive gas into chamber 210, depressurization unit 280 begins depressurization within chamber 210. At this time, substrate holding unit 220 remains in the lower position.

[0199] like Figure 11 As shown in (c), in step S9, nozzles 242a and 242b stop supplying inactive gas and begin supplying IPA vapor. At this time, the pressure reducing unit 280 continues to reduce pressure within chamber 210.

[0200] like Figure 11As shown in (d), in step S10, the substrate holding section 220 moves from the lower position to the upper position, and the nozzles 242a and 242b continue to supply IPA vapor. Thus, the substrate W is processed using IPA. At this time, the depressurization section 280 continues to depressurize the chamber 210.

[0201] like Figure 11 As shown in (e), in step S11, nozzles 242a and 242b continue to supply IPA vapor. Meanwhile, the drain section 270 discharges the stored liquid Ld from the processing tank 230. When the stored liquid Ld in the processing tank 230 is discharged, the substrate holding section 220 descends to a lower position within the processing tank 230. The depressurization section 280 continues to depressurize the chamber 210.

[0202] like Figure 12 As shown in (a), in step S12, while the nozzles 242a and 242b continue to supply IPA vapor, the substrate holding section 220 moves from the lower position to the upper position. The substrate holding section 220 moves until the substrate W faces the nozzles 242a and 242b. For example, the nozzles 242a and 242b face the center of the substrate W. Moreover, the nozzles 262a and 262b begin supplying vapor of the hydrophobic agent SMT. The pressure reducing section 280 continues to reduce the pressure in the chamber 210. In addition, the substrate holding section 220 can also move up and down repeatedly in the vertical direction from the upper position. By moving the substrate W up and down during the supply of vapor of the hydrophobic agent SMT, the hydrophobic agent SMT can be uniformly coated on the substrate W. Moreover, the supply of vapor of the hydrophobic agent SMT can be stopped for a certain period of time, and the substrate W can be exposed to the vapor environment of the hydrophobic agent SMT. Therefore, it can both suppress the consumption of hydrophobic agent SMT and prolong the time that substrate W is exposed to the vapor of hydrophobic agent SMT, thereby effectively suppressing the pattern collapse of substrate W.

[0203] like Figure 12 As shown in (b), in step S13, while nozzles 262a and 262b continue to supply vapor of the hydrophobic agent SMT, nozzles 242a and 242b stop supplying IPA vapor. The pressure reduction unit 280 continues to reduce pressure within chamber 210. The substrate holding unit 220 moves from the upper position until the lower end of the substrate W faces nozzles 262a and 262b. Alternatively, the substrate holding unit 220 can also move up and down repeatedly in the vertical direction from the upper position. Furthermore, the supply of hydrophobic agent SMT vapor can be stopped for a certain period, exposing the substrate W to the vapor environment of the hydrophobic agent SMT.

[0204] like Figure 12As shown in (c), in step S14, while nozzles 262a and 262b continue to supply vapor of the hydrophobicating agent SMT, nozzles 242a and 242b begin supplying IPA vapor. The pressure-reducing unit 280 continues to reduce pressure within chamber 210. The substrate holding unit 220 is positioned in an upper position with the lower end of the substrate W facing nozzles 262a and 262b. Alternatively, the substrate holding unit 220 can also move repeatedly up and down in the vertical direction from the upper position. Furthermore, the supply of hydrophobicating agent SMT vapor can be stopped for a certain period, exposing the substrate W to the vapor environment of the hydrophobicating agent SMT.

[0205] like Figure 12 As shown in (d), in step S15, while nozzles 242a and 242b continue to supply IPA vapor, nozzles 262a and 262b stop supplying SMT vapor. The pressure reduction unit 280 continues to reduce pressure within chamber 210. The substrate holding unit 220 moves from the upper position until the substrate W faces nozzles 242a and 242b. For example, nozzles 242a and 242b face the center of the substrate W. Alternatively, the substrate holding unit 220 can also move repeatedly up and down in the vertical direction from the upper position.

[0206] like Figure 13 As shown in (a), in step S16, nozzles 242a and 242b stop supplying IPA vapor and begin supplying inactive gas. The pressure reduction unit 280 continues to reduce pressure within chamber 210. The substrate holding unit 220 remains in the upper position with the substrate W facing nozzles 242a and 242b.

[0207] like Figure 13 As shown in (b), in step S17, while nozzles 242a and 242b continue to supply inactive gas, nozzles 252a, 252b, 252c, and 252d begin supplying inactive gas. The pressure-reducing unit 280 continues to reduce pressure within chamber 210. The substrate holding unit 220 remains in the upper position with the substrate W facing nozzles 242a and 242b.

[0208] like Figure 13 As shown in (c), in step S18, nozzles 242a, 242b, 252a, 252b, 252c, and 252d continue to supply inactive gas. The pressure reducing unit 280 stops the pressure reduction within chamber 210.

[0209] like Figure 13As shown in (d), in step S19, while nozzles 242a and 242b continue to supply inactive gas, nozzles 252a, 252b, 252c, and 252d stop supplying inactive gas. The substrate holding portion 220 remains in the position above, with the substrate W facing the nozzles 242a and 242b.

[0210] As described above, the third processing apparatus 200 performs a drying process on the substrate W. In this embodiment, after immersing the substrate W in dIPA, the substrate W is subjected to IPA treatment, and then a hydrophobic agent SMT is supplied. Therefore, the hydrophobic agent SMT can be fully impregnated on the surface of the substrate W, thereby suppressing the degradation of the pattern in the substrate W.

[0211] In addition, in reference Figure 10 (a) to Figure 13 In the description of (d), as Figure 10 As shown in (d), when the storage liquid Ld is stored in the processing tank 230, the storage liquid La previously stored in the processing tank 230 is discharged, and then dIPA is supplied to the processing tank 230 to store the storage liquid Ld in the processing tank 230. However, this embodiment is not limited to this. It is also possible to generate the storage liquid Ld in the processing tank 230 without discharging the storage liquid. For example, when water (e.g., DIW) is stored in the processing tank 230 as the storage liquid L (i.e., when the storage liquid La is stored in the processing tank 230), the storage liquid Ld can also be generated in the processing tank 230 by supplying IPA to the storage liquid La through the liquid supply unit 232.

[0212] Moreover, in reference Figure 10 (a) to Figure 13 In the description of (d), in the case of Figure 10 Step S6 shown in (f) continues until Figure 11 In step S9 shown in (c), during the period when the substrate W is immersed in the storage liquid Ld, the concentration of the storage liquid Ld is fixed, but this embodiment is not limited to this. The concentration of the storage liquid Ld can also be increased during the period when the substrate W is immersed in the storage liquid Ld. For example, the liquid supply unit 232 further supplies IPA to the storage liquid Ld in the processing tank 230, thereby increasing the concentration of the storage liquid Ld.

[0213] In addition, in reference Figure 7 (a) to Figure 7 In the description of (e), the substrate W is immersed in dIPA before the hydrophobic treatment, and the substrate W is sprayed with IPA liquid vapor after the hydrophobic treatment. However, this embodiment is not limited to this. The substrate W may also be immersed in dIPA after the hydrophobic treatment.

[0214] Next, refer to Figure 14 (a) to Figure 14 (f) will be used to explain the hydrophobic treatment performed by the substrate processing apparatus 100 of this embodiment. Figure 14 (a) to Figure 14 (f) is a schematic diagram illustrating the hydrophobic treatment process performed by the substrate processing apparatus 100 of this embodiment. Additionally, Figure 14 (a) to Figure 14 (c) and Figure 14 (e) to Figure 14 (f) and Figure 7 (a) to Figure 7 Similarly, (e) omits repeated explanations to avoid redundancy.

[0215] like Figure 14 As shown in (a), the substrate W is immersed in dIPA stored in the processing tank 230. While the substrate holding section 220 is in the upper position, a storage liquid Ld is stored in the processing tank 230. Subsequently, the substrate holding section 220 receives the substrate W. Typically, the substrate W received by the substrate holding section 220 has been rinsed with water (e.g., DIW). Then, the substrate holding section 220 moves from above to below the chamber 210, thereby immersing the substrate W in the storage liquid Ld stored in the processing tank 230.

[0216] like Figure 14 As shown in (b), IPA vapor is supplied to the substrate W to perform IPA treatment on the substrate W. Specifically, after the substrate holding unit 220 moves the substrate W to the upper position, the IPA supply unit 240 supplies IPA vapor to the substrate W. Thus, the substrate W can be treated with IPA. Here, the storage liquid Ld in the processing tank 230 is discharged.

[0217] like Figure 14 As shown in (c), vapor of the hydrophobic agent SMT is supplied to the substrate W to perform a hydrophobic treatment on the substrate W. With the substrate holding part 220 in the upper position, the hydrophobic agent supply part 260 supplies vapor of the hydrophobic agent SMT to the substrate W. As a result, the substrate W can be hydrophobically treated.

[0218] like Figure 14 As shown in (d), the substrate W is immersed again in the dIPA stored in the processing tank 230. While the substrate holding part 220 is in the upper position, the storage liquid Ld is stored in the processing tank 230. Subsequently, the substrate holding part 220 moves from the upper to the lower position of the chamber 210, thereby immersing the substrate W in the storage liquid Ld stored in the processing tank 230.

[0219] like Figure 14As shown in (e), IPA vapor is supplied to the substrate W to perform IPA treatment on the substrate W. The substrate holding section 220 moves from a lower position to an upper position. The IPA supply section 240 supplies IPA vapor to the substrate W. Thus, IPA treatment can be performed on the substrate W.

[0220] like Figure 14 As shown in (f), an inactive gas is supplied to the substrate W. With the substrate holding portion 220 in the upper position, the inactive gas supply portion 250 supplies the inactive gas to the substrate W. As a result, the substrate W can be dried.

[0221] According to this embodiment, after the substrate W is subjected to hydrophobic treatment, the substrate W is immersed in dIPA. Therefore, the cleanliness of the substrate W can be improved.

[0222] In addition, in reference Figure 14 (a) to Figure 14 In the description of (f), the storage liquid Ld that impregnates the substrate W is temporarily drained before the hydrophobic treatment, and then a new storage liquid Ld is stored in the treatment tank 230 after the hydrophobic treatment. However, this embodiment is not limited to this. It is also possible not to temporarily drain the storage liquid Ld that impregnates the substrate W before the hydrophobic treatment, and to impregnate the substrate W after the hydrophobic treatment.

[0223] In addition, in reference Figure 1 In the substrate processing apparatus 100, the processing unit 130 has a first processing unit 140, a second processing unit 150, and a third processing unit 200, but this embodiment is not limited to this. In the processing unit 130, any one of the first processing unit 140, the second processing unit 150, and the third processing unit 200 may be two or more.

[0224] Next, refer to Figure 15 The substrate processing apparatus 100 of this embodiment will be described below. Figure 15 This is a schematic diagram of the substrate processing apparatus 100. Additionally, Figure 15 In the substrate processing apparatus 100, the processing unit 130 has three sets of first processing devices 140 and second processing devices 150 and two third processing devices 200, and the substrate processing apparatus 100 also includes a conveying device LF. In addition, it is consistent with the reference... Figure 1 The substrate processing apparatus 100 has the same structure, and repeated descriptions are omitted to avoid redundancy.

[0225] like Figure 15As shown, in the substrate processing apparatus 100, the processing unit 130 includes a first processing unit 130a, a second processing unit 130b, a third processing unit 130c, and a drying processing unit 130d. Each of the first processing unit 130a, the second processing unit 130b, and the third processing unit 130c includes a first processing device 140, a second processing device 150, and a conveying device LF. The drying processing unit 130d includes two third processing devices 200a and 200b.

[0226] The second transport device WTR can move along the long side of the substrate processing apparatus 100 from the third processing apparatus 200a to the third processing unit 130c. Therefore, the second transport device WTR transports and removes batches of substrates W for the third processing apparatus 200a, the third processing apparatus 200b, the first processing apparatus 140a and the second processing apparatus 150a of the first processing unit 130a, the first processing apparatus 140b and the second processing apparatus 150b of the second processing unit 130b, and the first processing apparatus 140c and the second processing apparatus 150c of the third processing unit 130c.

[0227] In the drying unit 130d, the third processing apparatus 200a and the third processing apparatus 200b receive batches of multiple substrates W and perform drying processing on the multiple substrates W.

[0228] A first processing unit 130a is disposed adjacent to the drying processing unit 130d. In the first processing unit 130a, a first processing apparatus 140a and a second processing apparatus 150a each include a tank (not shown). The first processing apparatus 140a immerses the substrates W in a chemical solution stored in the tank to process multiple substrates W using the chemical solution. Alternatively, the second processing apparatus 150a immerses the substrates W in a rinsing solution stored in the tank to clean multiple substrates W using the rinsing solution.

[0229] Furthermore, in the first processing unit 130a, the conveying device LF can not only transport batches within the first processing unit 130a, but also transfer batches to the second conveying device WTR. Moreover, the conveying device LF immerses each substrate W of a batch in the tanks of the first processing device 140a and the second processing device 150a, or lifts each substrate W of a batch from the tanks of the first processing device 140a and the second processing device 150a.

[0230] The first processing device 140b and the second processing device 150b of the second processing unit 130b adjacent to the first processing unit 130a, and the first processing device 140c and the second processing device 150c of the third processing unit 130c adjacent to the second processing unit 130b, have the same structure as the first processing device 140a and the second processing device 150a of the first processing unit 130a.

[0231] According to this embodiment, the substrate processing apparatus 100 has three first processing devices 140a to 140c, three second processing devices 150a to 150c, and two third processing devices 200a and 200b. Therefore, by processing batches of substrates W sequentially, a large number of substrates W can be processed efficiently.

[0232] In addition, in reference Figures 1 to 15 In the description above, the drug solution treatment, rinsing treatment, and drying treatment are performed separately by the first treatment device 140, the second treatment device 150, and the third treatment device 200, but this embodiment is not limited to this. Any two of the drug solution treatment, rinsing treatment, and drying treatment can also be performed by the same treatment device.

[0233] For example, the processing unit 130 may not have the second processing device 150, but instead have a first processing device 140 and a third processing device 200. In this case, after the substrate W is treated with a chemical solution in the first processing device 140, the substrate W may be transferred to the third processing device 200 and rinsed using the DIW stored in the processing tank 230 within the third processing device 200. In one example, the stored liquid in the processing tank 230 may then be changed to dIPA while the substrate W is being lifted from the processing tank 230 above the chamber 210. Alternatively, the liquid supply unit 232 may generate dIPA in the processing tank 230 by supplying IPA to the processing tank 230 storing DIW.

[0234] Furthermore, in reference Figures 1 to 15 In the description provided, especially as shown in reference Figure 6 as well as Figure 7 (a) to Figure 7 As described in (e), the third processing apparatus 200 performs IPA treatment, hydrophobic treatment, and inert gas supply treatment in addition to dIPA impregnation, but this embodiment is not limited to this. Any of the IPA treatment, hydrophobic treatment, IPA treatment, and inert gas supply treatment can also be performed using an apparatus other than the third processing apparatus 200.

[0235] The above is with reference to the appendix. Figure 1The embodiments of the present invention have been described. However, the present invention is not limited to the described embodiments and can be implemented in various forms without departing from its spirit. Moreover, various inventions can be formed by appropriately combining the multiple constituent elements disclosed in the embodiments. For example, several constituent elements can be deleted from all the constituent elements shown in the embodiments. Furthermore, constituent elements spanning different embodiments can also be appropriately combined. The accompanying drawings are schematic representations of various constituent elements in the main body for ease of understanding, and the thickness, length, number, spacing, etc. of each constituent element shown may sometimes differ from the actual figures due to the nature of the drawings. Moreover, the material, shape, size, etc. of each constituent element shown in the embodiments are examples and are not particularly limited, and various modifications can be made without substantially departing from the effects of the present invention.

[0236] [Industry availability]

[0237] The present invention can be preferably used in a substrate processing apparatus and a substrate processing method.

Claims

1. A substrate processing method, comprising: The rinsing process uses a rinsing solution to treat the substrate; The immersion process involves immersing the substrate in diluted isopropanol stored in a processing tank after the rinsing process. The first isopropanol treatment step involves treating the substrate with isopropanol after the impregnation step. as well as The hydrophobic treatment process involves applying a hydrophobic treatment to the substrate after the first isopropanol treatment process. In the impregnation process, the concentration of the diluted isopropanol increases according to the impregnation time of the substrate.

2. The substrate processing method according to claim 1, wherein... The rinsing process is carried out using a rinsing treatment device. The impregnation process is carried out using a drying device. The substrate processing method further includes: The transfer process involves transferring the substrate from the rinsing apparatus to the drying apparatus after the rinsing process and before the impregnation process.

3. The substrate processing method according to claim 1, further comprising: Prior to the impregnation process, the diluted isopropanol is stored in the treatment tank while an inactive gas is supplied to the chamber containing the treatment tank.

4. The substrate processing method according to claim 1, further comprising: The second isopropanol treatment step involves treating the substrate with isopropanol after the hydrophobic treatment step. as well as The inactive gas supply process involves supplying an inactive gas to the substrate after the second isopropanol treatment process.

5. The substrate processing method according to claim 4, further comprising: The immersion process, which occurs after the hydrophobic treatment process and before the second isopropanol treatment process, involves immersing the substrate in diluted isopropanol stored in the treatment tank.

6. A substrate processing apparatus, comprising: chamber; A processing tank, disposed within the chamber, is used to store the storage liquid; A substrate holding section holds the substrate and is movable to immerse the substrate in the storage liquid of the processing tank; The liquid supply unit supplies diluted isopropanol to the processing tank as the storage liquid; An isopropanol supply unit supplies isopropanol vapor into the chamber; A hydrophobic agent supply unit supplies vapor of hydrophobic agent into the chamber; as well as The control unit controls the substrate holding unit, the liquid supply unit, the isopropanol supply unit, and the hydrophobic agent supply unit. The control unit controls the substrate holding unit, the isopropanol supply unit, and the hydrophobic agent supply unit so that after immersing the substrate treated with the rinsing solution in diluted isopropanol stored in the processing tank, isopropanol vapor is supplied to the substrate, and subsequently, the hydrophobic agent vapor is supplied to the substrate. Furthermore, the control unit controls the liquid supply unit so that the concentration of the diluted isopropanol increases according to the time the substrate is immersed in the diluted isopropanol in the processing tank.

7. The substrate processing apparatus according to claim 6, further comprising: A drying process apparatus includes the chamber, the processing tank, the substrate holding part, the isopropanol supply part, and the hydrophobic agent supply part; A rinsing treatment apparatus that uses the rinsing solution to treat the substrate; as well as A conveying device transports the substrate treated with the rinsing solution in the rinsing treatment device to the drying treatment device.

8. The substrate processing apparatus according to claim 6, further comprising: The inactive gas supply unit supplies vapor of inactive gas into the chamber. The control unit controls the liquid supply unit and the inactive gas supply unit so that, while the inactive gas is supplied to the chamber, the diluted isopropanol is supplied to the processing tank.

9. The substrate processing apparatus according to claim 8, wherein The control unit controls the isopropanol supply unit and the inactive gas supply unit so that after the hydrophobic agent is supplied to the substrate, isopropanol vapor is supplied to the substrate, and then an inactive gas is supplied to the substrate.

10. The substrate processing apparatus according to claim 9, wherein The control unit controls the substrate holding unit to immerse the substrate in diluted isopropanol stored in the processing tank after the hydrophobic agent is supplied to the substrate and before the isopropanol vapor is supplied to the substrate.

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