Support device and substrate processing device including the same

Abstract

The present invention provides a support device and a substrate processing apparatus including the support device. The substrate processing apparatus may include a process chamber providing a process space in which a predetermined process can be performed on a substrate, and a support device in contact with and supporting the process chamber. The support device may include a support chamber providing a support space for supporting components of the process chamber, and a supply component for supplying fluid into the support space, thereby effectively preventing the components of the process chamber from being deformed, damaged, or cracked by the high pressure generated by the supercritical fluid introduced into the process chamber.

Description

[0001] This application claims priority from Korean Application No. 10-2020-0187301 filed with the Korean Intellectual Property Office on December 30, 2020. Technical Field

[0002] Exemplary embodiments of the present invention relate to a support device and a substrate processing apparatus including the support device. More specifically, exemplary embodiments of the present invention relate to a support device capable of improving the stability and durability of a process chamber and a substrate processing apparatus including the support device. Background Art

[0003] Typically, integrated circuit devices including semiconductor devices or display devices including flat panel displays can be manufactured using substrate processing equipment that may include various process chambers such as deposition chambers, sputtering chambers, etching chambers, cleaning chambers, and drying chambers.

[0004] When a supercritical fluid is introduced into the process chamber, the high pressure generated by the supercritical fluid may cause deformation or damage to components of the process chamber. Therefore, the supercritical fluid causing the high pressure may reduce the structural stability and durability of the process chamber. Furthermore, this may reduce the stability of processes performed on substrates within the process chamber. Summary of the Invention

[0005] Technical issues

[0006] According to one aspect of the present invention, a supporting device is provided that can improve the structural stability of an engineering chamber and enhance the durability of the engineering chamber.

[0007] According to another aspect of the present invention, a substrate processing apparatus including a supporting device capable of improving structural stability of a process chamber and enhancing durability of the process chamber is provided.

[0008] Technical Solution

[0009] According to one aspect of the present invention, a supporting device for a process chamber for performing a predetermined process on a substrate is provided, wherein the supporting device may include a supporting chamber disposed adjacent to the process chamber and a supply component for supplying a fluid into the supporting chamber.

[0010] In an exemplary embodiment, the supporting chamber may be in contact with the engineering chamber.

[0011] In an exemplary embodiment, the pressure within the support chamber may be substantially the same as or greater than the pressure within the process chamber.

[0012] In an exemplary embodiment, the fluid in a supercritical state may be supplied into the process chamber via a first supply line including a branch line, and the supply component may include a second supply line for supplying the fluid in a supercritical state into the support chamber.

[0013] In an exemplary embodiment, the first supply line may include a first branch line connected to an upper portion of the process chamber and a second branch line connected to a lower portion of the process chamber.

[0014] In an exemplary embodiment, the first branch line may include a first regulating valve for regulating the flow rate of the fluid in the supercritical state, the second branch line may include a second regulating valve for regulating the flow rate of the fluid in the supercritical state, and the second supply line may include a third regulating valve for regulating the flow rate of the fluid in the supercritical state.

[0015] In an exemplary embodiment, the second branch line may pass through the supporting chamber and be connected to the engineering chamber.

[0016] In some exemplary embodiments, the supporting chamber may include a first connection port disposed on a side portion and a second connection port disposed on an upper portion.

[0017] In some exemplary embodiments, a fluid in a supercritical state may be supplied to the process chamber via a supply line, and the supply component may branch from the supply line and include a branch line for supplying the fluid in a supercritical state to the support chamber.

[0018] In some exemplary embodiments, the supercritical fluid may be supplied into the process chamber through a branch line branching from the supply line.

[0019] In another exemplary embodiment, the fluid in a supercritical state may be supplied into the process chamber through a first supply line, and the supply component may include a second supply line for supplying the fluid in a supercritical state into the support chamber.

[0020] In another exemplary embodiment, the first supply line may be connected to a first inlet port provided on a side of the process chamber, and the second supply line may be connected to a second inlet port provided on a side of the support chamber.

[0021] In another exemplary embodiment, the fluid in a supercritical state may be supplied to the process chamber via a supply line, and the supply component may branch from the supply line and include a branch line for supplying the fluid in a supercritical state to the support chamber.

[0022] According to another aspect of the present invention, a substrate processing apparatus is provided, comprising: a process chamber providing a process space for performing a predetermined process on a substrate; and a support device contacting and supporting the process chamber. The support device may include a support chamber providing a support space for supporting components of the process chamber; and a supply component for supplying a fluid into the support space.

[0023] In an exemplary embodiment, the pressure in the support space may be substantially higher than the pressure in the engineering space.

[0024] In an exemplary embodiment, the substrate processing apparatus may further include a first supply line including a branch line for supplying a supercritical fluid into the process chamber, and the supply component may include a second supply line for supplying the supercritical fluid into the support chamber. In this case, the first supply line may include a first branch line connected to the upper portion of the process chamber and a second branch line connected to the lower portion of the process chamber. For example, the second branch line may pass through the support chamber and connect to the process chamber. The support chamber may include a first connection port located on its side and a second connection port located on its upper portion.

[0025] In some exemplary embodiments, the substrate processing apparatus may further include a supply line for supplying a fluid in a supercritical state into the process chamber, and the supply component may branch from the supply line and may include a branch line for supplying the fluid in a supercritical state into the support chamber.

[0026] Technical Effects

[0027] According to an exemplary embodiment of the present invention, the support apparatus, including the support chamber and the supply component, can effectively prevent components within the process chamber from being deformed, damaged, or cracked by the high pressure generated by the supercritical fluid introduced into the process chamber. This can enhance the structural stability and durability of the process chamber and improve the reliability of processes performed within the process chamber. Consequently, the manufacturing costs of integrated circuit devices including semiconductor devices or display devices including flat panel displays manufactured using the substrate processing apparatus can be reduced, while the reliability of the integrated circuit devices or display devices can be improved.

[0028] However, the technical effects of the present invention are not limited to the above technical effects, and can be expanded in various ways without exceeding the scope of the idea and field of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 A plan view of a substrate processing apparatus for illustrating an exemplary embodiment of the present invention;

[0030] Figure 2 is a cross-sectional view of a process chamber and a support device for illustrating an exemplary embodiment of the present invention;

[0031] Figure 3 is a cross-sectional view of a process chamber and a support device for illustrating another exemplary embodiment of the present invention;

[0032] Figure 4 is a cross-sectional view of a process chamber and a support device for illustrating another exemplary embodiment of the present invention;

[0033] Figure 5 FIG. 1 is a cross-sectional view of a process chamber and a supporting device for illustrating another exemplary embodiment of the present invention. DETAILED DESCRIPTION

[0034] The following describes exemplary embodiments of the present invention with reference to the accompanying drawings. The present invention can be implemented in various variations and can have various forms, and this specification describes the embodiments in detail. However, this is not intended to limit the present invention to the specific disclosed forms, and it should be understood that it includes all variations, equivalents, and alternatives within the scope of the concept and technology of the present invention. Similar reference numerals are used for similar components when describing the various drawings. Terms such as first and second can be used to describe various components, but the components should not be limited by these terms. These terms are only used to distinguish one component from other components. The terms used in this application are only used to describe specific embodiments and are not intended to limit the present invention. Singular expressions also include plural expressions unless otherwise expressly stated in the text. Terms such as "including" or "comprising" in this application should be understood to mean the presence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should not be understood to preclude the existence or additional possibility of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0035] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms defined in commonly used dictionaries should be interpreted as having the same meaning as that in the context of the relevant art and should not be construed as having an ideal or overly formal meaning unless explicitly defined in this application.

[0036] The following describes exemplary embodiments of the present invention in more detail with reference to the accompanying drawings. In the accompanying drawings, the same elements or components may be denoted by the same reference numerals, and repeated description of the same elements or components may be omitted.

[0037] Figure 1 FIG. 1 is a plan view of a substrate processing apparatus for explaining an exemplary embodiment of the present invention.

[0038] See also Figure 1 The substrate processing apparatus of the exemplary embodiment may include an index module 20 and a processing module 55 .

[0039] The indexing module 20 can transfer a substrate from an external device to a processing module 55, where the processing module 55 can perform a predetermined process on the substrate. In this case, the substrate can be used to manufacture an integrated circuit device or a display device. For example, the substrate can include a silicon wafer, a glass substrate, an organic substrate, a ceramic substrate, etc.

[0040] In an exemplary embodiment, the indexing module 20 may include a loading chamber 10 and a transfer frame 15. A carrier 25 capable of accommodating the substrate may be loaded into the loading chamber 10. For example, a front-opening unified pod (FOUP) may be used as the carrier 25. The carrier 25 may be transferred into the loading chamber 10 via an overhead transfer (OHT) and may be transferred from the loading chamber 10 to an external location.

[0041] The transfer frame 15 may transfer the substrate between the processing module 55 and the carrier 25 loaded in the load chamber 10 . The transfer frame 15 may include an indexing robot 30 and an indexing rail 35 .

[0042] The indexing robot 30 can move along the indexing rail 35 and transfer the substrate between the indexing module 20 and the processing module 55. For example, the indexing robot 30 can transfer the substrate between the carrier 25 and the buffer tank 60 while moving on the indexing rail 35.

[0043] like Figure 1 For example, the processing module 55 is not limited thereto, but can perform predetermined processes including deposition, etching, sputtering, coating, developing, cleaning, and drying on the substrate. The processing module 55 may include a buffer chamber 40, a transfer chamber 45, a process chamber 50, a control unit (not shown), and the like.

[0044] The substrate transferred between the index module 20 and the processing module 55 may wait in the buffer chamber 40 for the predetermined process. The buffer chamber 40 may be provided with a buffer tank 60 for arranging the substrate on the upper portion. In an exemplary embodiment, a plurality of buffer tanks 60 may be provided in the buffer chamber 40, and a plurality of substrates may be arranged in the buffer chamber 40.

[0045] The transfer chamber 45 can transfer the substrate between the buffer chamber 40 and the process chamber 50. The transfer chamber 45 can include a transfer robot 65 and a transfer rail 70. The transfer robot 65 can move along the transfer rail 70 to transfer the substrate between the buffer chamber 40 and the process chamber 50. For example, the transfer robot 65 can transfer the substrate located in the buffer tank 60 to the process chamber 50 while moving on the transfer rail 70.

[0046] In an exemplary embodiment, the substrate processing apparatus may include a plurality of process chambers 50. For example, the plurality of process chambers 50 are not limited thereto, but may include an etching chamber, a deposition chamber, a sputtering chamber, a coating chamber, a developing chamber, a cleaning chamber, and a drying chamber capable of performing various processes in order to manufacture an integrated circuit device including a semiconductor device or a display device including a flat panel display device.

[0047] Desired processes including the deposition process, the etching process, the sputtering process, the developing process, the cleaning process, and the drying process may be performed on the substrate in the process chamber 50. In this case, each process chamber 50 may include an openable and closable door for loading and unloading the substrate.

[0048] Figure 2 FIG. 1 is a cross-sectional view of a process chamber of a substrate processing apparatus for illustrating an exemplary embodiment of the present invention.

[0049] See also Figure 2 The substrate processing apparatus may include a process chamber 105 , a fluid supply unit, a control unit, a support device, etc. In an exemplary embodiment, the process chamber 105 of the substrate processing apparatus may correspond to a drying chamber.

[0050] The supporting device may be disposed adjacent to the engineering chamber 105. The supporting device may include a supporting chamber 120 capable of contacting the engineering chamber 105. Furthermore, the supporting device may include a supply component capable of supplying a predetermined fluid into the supporting chamber 120.

[0051] In an exemplary embodiment, the interior of the supporting chamber 120 may provide a supporting space 130. Figure 2 It appears that the support chamber 120 is disposed below the process chamber 105 , but the position of the support chamber 120 may be changed according to the structure and size of the process chamber 105 , the composition of the supply line, the conditions of the process performed in the process chamber 105 , and the like.

[0052] The process chamber 105 may include a first housing 110 , a second housing 115 , a support unit 135 , and a cutting unit 140 .

[0053] The first housing 110 may be coupled to the second housing 115. The first housing 110 and the second housing 115 may provide a processing space 125 capable of performing a drying process on the substrate W disposed in the process chamber 105. In an exemplary embodiment, the drying process may be performed by supplying a supercritical fluid onto the top and bottom surfaces of the substrate W. For example, the supercritical fluid may include supercritical carbon dioxide gas.

[0054] The support unit 135 of the process chamber 105 can support the substrate W within the processing space 125 defined by the first housing 110 and the second housing 115. The support unit 135 can be disposed within the first housing 110. For example, the support unit 135 can have a hook-shaped structure extending substantially downward from the inner wall of the first housing 110. In an exemplary embodiment, a plurality of support units 135 can be fixed to the inner wall of the first housing 110. The peripheral portion of the substrate W can be stably supported by the plurality of support units 135.

[0055] The fluid supply unit can supply the supercritical fluid into the process chamber 105 and the support chamber 120. In an exemplary embodiment, the fluid supply unit may include a first supply line 155 having a branch line capable of supplying the supercritical fluid into the process chamber 105. In this case, the supply component of the support device may include a second supply line 160 capable of supplying the supercritical fluid into the support chamber 120.

[0056] The first supply line 155 may include a first branch line 145 and a second branch line 150. The first branch line 145 may be connected to the first housing 110, and the second branch line 150 may be connected to the second housing 115 via the support chamber 120. In an exemplary embodiment, the first branch line 145 may supply the supercritical fluid into the processing space 125 via the first inlet port of the first housing 110. Furthermore, the second branch line 150 may supply the supercritical fluid into the processing space 125 via the first and second connection ports of the support chamber 120 and the second inlet port of the second housing 115.

[0057] The supercritical fluid can be supplied from the upper portion of the processing space 125 onto the substrate W via the first branch line 145 and the first inlet port of the first housing 110. Furthermore, the supercritical fluid can be introduced into the processing space 125 via the second branch line 150, the first and second connection ports of the support chamber 120, and the second inlet port of the second housing 115. In an exemplary embodiment, the first connection port can be located on a side of the support chamber 120, and the second connection port can be located at the upper portion of the support chamber 120. The second branch line 150 can be connected to the second inlet port of the second housing 115 via the first connection port, the support space 130, and the second connection port.

[0058] The first branch line 145 may include a first regulating valve 165, and the second branch line 150 may include a second regulating valve 170. The first regulating valve 165 and the second regulating valve 170 may respectively regulate the flow rate of the supercritical fluid supplied to the processing space 125 and the first pressure of the processing space 125 generated by the supercritical fluid. In this case, the first regulating valve 165 and the second regulating valve 170 may regulate the flow rate of the supercritical fluid and the first pressure of the processing space 125 simultaneously or sequentially.

[0059] The cutoff unit 140 may be disposed above the second inlet port of the second housing 115. For example, the cutoff unit 140 may substantially cover the second inlet port of the second housing 115. The cutoff unit 140 can prevent the supercritical fluid from directly contacting the substrate W.

[0060] like Figure 2 For example, the second supply line 160 of the support device can supply the supercritical fluid into the support space 130. The second supply line 160 can be connected to a third inlet port of the support chamber 120. The third inlet port can be provided on a side of the support chamber 120.

[0061] The second supply line 160 may include a third regulating valve 175. The third regulating valve 175 is capable of regulating the flow rate of the supercritical fluid supplied to the support space 130. Furthermore, the third regulating valve 175 is capable of regulating the second pressure of the support space 130 generated by the supercritical fluid. In an exemplary embodiment, the second pressure of the support space 130 may be substantially the same as or substantially higher than the first pressure within the processing space 125. Furthermore, the support chamber 120 having a higher second pressure can improve the stability and durability of the process chamber 105.

[0062] When the supercritical fluid is introduced into the processing space 125, the components included in the process chamber 105 may be deformed or damaged by the first pressure generated by the supercritical fluid. For example, the components of the process chamber 105 may be twisted, bent, or cracked due to the relatively high first pressure generated in the process chamber 105. This may lead to a decrease in the structural stability and durability of the process chamber 105. In addition, the reliability of the process performed on the substrate W in such a process chamber 105 may also be reduced. In contrast, according to an exemplary embodiment, the support device including the support chamber 120 and the supply component having a relatively simple structure can prevent the components of the process chamber 105 from being deformed or damaged. In other words, the second pressure within the support space 130 generated by the supercritical fluid can be substantially equal to or greater than the first pressure within the processing space 125. Therefore, the support device, which maintains the second pressure, can effectively prevent the components within the process chamber 105, which maintains the first pressure, from twisting, bending, or cracking due to the first pressure. This can further enhance the structural stability and durability of the process chamber 105. Furthermore, the reliability of processes performed within the process chamber 105, which exhibits this enhanced stability and durability, can be improved. Consequently, the manufacturing costs of integrated circuit devices, including semiconductor devices, or display devices, including flat panel displays, manufactured using the substrate processing apparatus can be reduced, while the reliability of the integrated circuit devices or display devices can be improved.

[0063] Figure 3 FIG. 1 is a cross-sectional view of a process chamber and a support device of a substrate processing apparatus for illustrating another exemplary embodiment of the present invention.

[0064] See also Figure 3 The substrate processing apparatus may include a process chamber 205, a fluid supply unit, a control unit, a support device, and the like. The support device may be adjacent to the process chamber 205 and may include a support chamber 220 therein that can provide a support space 230. The support device may also include a supply component that can supply fluid into the support space 230.

[0065] The process chamber 205 may include a first housing 210 , a second housing 215 , a support unit 235 , and a cutting unit 240 . The first housing 210 and the second housing 215 may be coupled to each other, and a processing space 225 may be disposed within the process chamber 205 .

[0066] The support unit 235 of the process chamber 205 can support the substrate W within the processing space 225 defined by the first housing 210 and the second housing 215. The support unit 235 can be installed in the first housing 210. For example, a plurality of support units 235 can be provided in the first housing 120 to support the peripheral portion of the substrate W.

[0067] The fluid supply unit can supply a supercritical fluid into the process chamber 205 and the support chamber 220. In some exemplary embodiments, the fluid supply unit may include a supply line 260, a first branch line 245, a second branch line 250, and a third branch line 255. The first branch line 245, the second branch line 250, and the third branch line 255 can branch from the supply line 260, respectively, and can supply the supercritical fluid into the process chamber 205 and the support chamber 220. In this case, the supply component of the support device can correspond to the third branch line 255 that can supply the supercritical fluid into the support chamber 220.

[0068] The first branch line 245 may be connected to the first housing 210, and the second branch line 250 may be connected to the second housing 215 through the support chamber 220. According to some exemplary embodiments, the supercritical fluid may be supplied from the first branch line 245 to the processing space 225 through the first inlet port of the first housing 210. Furthermore, the supercritical fluid may be introduced from the second branch line 250 into the processing space 225 through the first and second connection ports of the support chamber 220 and the second inlet port of the second housing 215. Furthermore, the supercritical fluid may be introduced from the third branch line 255 into the support space 230 through a third inlet port that may be provided on the side of the support chamber 220.

[0069] In another exemplary embodiment, the first connection port may be disposed on a side of the support chamber 220, and the second connection port may be disposed on an upper portion of the support chamber 220. The second branch line 250 may be connected to the second inlet port of the second housing 215 via the first connection port, the support space 230, and the second connection port.

[0070] The cut-off unit 240 may be disposed above the second inlet port of the second housing 215. The cut-off unit 240 can prevent the fluid in the supercritical state from directly contacting the substrate W.

[0071] like Figure 3For example, the first branch line 245 may include a first regulating valve 265, the second branch line 250 may include a second regulating valve 270, and the third branch line 255 may include a third regulating valve 275. The first regulating valve 265 and the second regulating valve 270 are capable of regulating the flow rate of the supercritical fluid supplied to the processing space 225 and the first pressure of the processing space 225 generated by the supercritical fluid. The third branch line 255 of the support device is capable of supplying the supercritical fluid to the support space 230. The third branch line 255 may be connected to the third inlet port of the support chamber 220. The third regulating valve 275 is capable of regulating the flow rate of the supercritical fluid supplied to the support space 230 and the second pressure within the support space 230 generated by the supercritical fluid. In this case, the second pressure within the support space 230 can be substantially the same as or substantially higher than the first pressure within the processing space 225. Therefore, as described above, the stability and durability of the process chamber 205 can be improved by the support chamber 220 having a relatively high second pressure. Consequently, the manufacturing costs of integrated circuit devices including semiconductor devices or display devices including flat panel displays manufactured using the substrate processing apparatus can be reduced, and the reliability of the integrated circuit devices or display devices can be improved. According to some exemplary embodiments, the third branch line 255 of the support apparatus can branch off from the supply line 260. Therefore, no additional fluid supply source is required, and the substrate processing apparatus can have a relatively simple structure.

[0072] Figure 4 FIG. 1 is a cross-sectional view of a process chamber and a support device of a substrate processing apparatus for illustrating another exemplary embodiment of the present invention.

[0073] See also Figure 4 The substrate processing apparatus may include a process chamber 305 , a fluid supply unit, a control unit, a support device, etc. The support device may include a support chamber 320 that can provide a support space 330 and a supply component that can supply fluid into the support chamber 320 .

[0074] The process chamber 305 may include a first housing 310, a second housing 315, and a support unit 335, but may not include a separate disconnecting unit. The first housing 310 and the second housing 315 may be combined to provide a processing space 325 within the process chamber 305. The support unit 335 may be disposed within the first housing 310 and may support a substrate W within the processing space 325.

[0075] The fluid supply unit can supply a supercritical fluid into the process chamber 305 and the support chamber 320. In another exemplary embodiment, the fluid supply unit may include a first supply line 350 and a second supply line 360. The first supply line 350 can supply the supercritical fluid into the processing space 325, and the second supply line 360 ​​can supply the supercritical fluid into the support space 330. The supply component of the support device may be the second supply line 360 ​​that can supply the supercritical fluid into the support chamber 320.

[0076] The first supply line 350 may be connected to a first inlet port of the second housing 315, and the second supply line 355 may be connected to a second inlet port of the support chamber 320. In this case, the first inlet port may be provided on a side of the second housing 315, and the second inlet port may be provided on a side of the support chamber 320. Figure 4 In the example, the first inflow port is provided at the side of the second housing 315 , but the first inflow port may also be provided at the side of the first housing 310 .

[0077] The first supply line 350 may include a first regulating valve 355, and the second supply line 360 ​​may include a second regulating valve 365. The first regulating valve 355 can adjust the flow rate of the supercritical fluid supplied to the processing space 325, thereby adjusting the first pressure of the processing space 325 generated by the supercritical fluid. The second regulating valve 365 can adjust the flow rate of the supercritical fluid supplied to the support space 330, thereby adjusting the second pressure within the support space 330 generated by the supercritical fluid. In this case, the second pressure within the support space 330 can be substantially the same as or substantially higher than the first pressure within the processing space 325.

[0078] Figure 5 FIG. 1 is a cross-sectional view of a process chamber and a support device of a substrate processing apparatus for illustrating another exemplary embodiment of the present invention.

[0079] See also Figure 5 The substrate processing apparatus may include a process chamber 405 , a fluid supply unit, a control unit, a support device, etc. The support device may include a support chamber 420 that can provide a support space 430 and a supply component that can supply fluid into the support chamber 420 .

[0080] The process chamber 405 may include a first housing 410, a second housing 415, and a support unit 435, but may not include a separate disconnecting unit. The first housing 410 and the second housing 415 may be combined to provide a processing space 425 within the process chamber 405. The support unit 435 may be disposed within the first housing 410 and may support a substrate W within the processing space 425.

[0081] The fluid supply unit can supply a supercritical fluid into the process chamber 405 and the support chamber 420. In another exemplary embodiment, the fluid supply unit may include a supply line 450, a first branch line 455, and a second branch line 465. The first branch line 455 and the second branch line 465 may branch from the supply line 450. The first branch line 455 can supply the supercritical fluid into the processing space 425, and the second branch line 465 can supply the supercritical fluid into the support space 430. In this case, the supply component of the support device may be the second branch line 465.

[0082] The first branch line 455 may be connected to the first inlet port of the second housing 415, and the second branch line 465 may be connected to the second inlet port of the support chamber 420. For example, the first inlet port may be provided on the side of the second housing 415, and the second inlet port may be provided on the side of the support chamber 420. Alternatively, the first inlet port may also be provided on the side of the first housing 410.

[0083] The first branch line 455 may include a first regulating valve 460, and the second branch line 465 may include a second regulating valve 470. The first regulating valve 460 is capable of regulating the flow rate of the supercritical fluid supplied to the processing space 425, thereby adjusting the first pressure of the processing space 425 generated by the supercritical fluid. The second regulating valve 470 is capable of regulating the flow rate of the supercritical fluid supplied to the support space 430, thereby adjusting the second pressure within the support space 430 generated by the supercritical fluid. The second pressure within the support space 430 may be substantially the same as or substantially higher than the first pressure within the processing space 425. The support chamber 420 having the second pressure as described above can improve the stability and durability of the process chamber 405.

[0084] According to an exemplary embodiment of the present invention, a substrate processing apparatus includes a support device capable of supporting a process chamber. This support device can prevent deformation, damage, or cracking of components within the process chamber caused by the high pressure generated by the supercritical fluid introduced into the process chamber. This can improve the structural stability and durability of the process chamber, and enhance the reliability of processes performed within the process chamber. Consequently, manufacturing costs for integrated circuit devices including semiconductor devices or display devices including flat panel displays manufactured using a substrate processing apparatus including the support device and the process chamber can be reduced, while also enhancing the reliability of the integrated circuit devices or display devices.

[0085] While exemplary embodiments of the present invention are described above, it will be understood by those skilled in the art that various modifications and variations may be made to the present invention without departing from the spirit and scope of the invention as described in the appended claims.

Claims

1. A supporting device for a process chamber, which is a supporting device for a process chamber used to perform a predetermined process on a substrate, characterized in that: include: a support chamber, arranged adjacent to the engineering chamber and providing a support space; a first supply line having a first branch line and a second branch line for supplying a fluid in a supercritical state into the engineering chamber; and a second supply line for supplying the fluid in the supercritical state into the support space; The first branch line is connected to the upper part of the engineering chamber, the second branch line is connected to the lower part of the engineering chamber, and the second branch line passes through the support space of the support chamber and is connected to the engineering chamber. The support chamber is in contact with the engineering chamber, The pressure in the support space is greater than or equal to the pressure in the engineering chamber.

2. The support device according to claim 1, characterized in that The first branch line includes a first regulating valve for regulating the flow of the supercritical fluid, the second branch line includes a second regulating valve for regulating the flow of the supercritical fluid, and the second supply line includes a third regulating valve for regulating the flow of the supercritical fluid.

3. The supporting device according to claim 1, characterized in that The supporting chamber includes a first connecting port provided on a side thereof and a second connecting port provided on an upper portion thereof.

4. The support device according to claim 1, characterized in that The second supply line branches off from the first supply line.

5. The supporting device according to claim 4, characterized in that: The first supply line is connected to a first inflow port provided on a side of the process chamber, and the second supply line is connected to a second inflow port provided on a side of the support chamber.

6. A substrate processing device, characterized in that: include: The process chamber provides a process space for performing predetermined processes on the substrate; and a supporting device, contacting with the engineering chamber and supporting the engineering chamber, The supporting device includes a supporting chamber that provides a supporting space for supporting the components of the engineering chamber and a supply component that supplies fluid into the supporting space; The invention also provides a first supply line having a first branch line and a second branch line for supplying a supercritical fluid into the engineering chamber, wherein the first branch line is connected to the upper portion of the engineering chamber, the second branch line is connected to the lower portion of the engineering chamber, and the second branch line passes through the support space of the support chamber and is connected to the engineering chamber. comprising a second supply line for supplying the fluid in the supercritical state into the support space, The pressure in the support space is greater than or equal to the pressure in the engineering chamber.

7. The substrate processing apparatus according to claim 6, wherein: The supporting chamber includes a first connecting port provided on a side thereof and a second connecting port provided on an upper portion thereof.

8. The substrate processing apparatus according to claim 6, wherein: Also includes: The second supply line branches off from the first supply line.

Images