Substrate processing apparatus and method

Abstract

A substrate processing apparatus and method for saving chemical liquid are disclosed. The apparatus includes a support module on which a substrate is mounted and which is rotatable, a housing surrounding the support module and including a first bowl and a second bowl disposed inside the first bowl, a first chemical liquid supply module for spraying a first chemical liquid to the substrate, and a second chemical liquid supply module for spraying a second chemical liquid different from the first chemical liquid to the substrate, wherein the first bowl corresponds to the substrate, and the first chemical liquid supply module supplies the first chemical liquid while the support module is rotated at a first speed, the second bowl corresponds to the substrate, and the second chemical liquid supply module supplies the second chemical liquid at a first flow rate while the support module is rotated at a second speed less than or equal to the first speed, and the second bowl corresponds to the substrate, and the second chemical liquid supply module does not supply the second chemical liquid or supplies the second chemical liquid at a second flow rate less than the first flow rate while the support module is rotated at a third speed less than the second speed.

Description

TECHNICAL FIELD

[0001] The present application relates to a substrate processing apparatus and method. BACKGROUND

[0002] When manufacturing a semiconductor device or a display device, various processes such as photolithography, etching, ashing, ion implantation, thin film deposition, etc. are performed. Here, the etching process is a process of removing a film substance formed on a substrate, and the cleaning process is a process of removing a contaminant substance remaining on the surface of the substrate. Depending on the process performing manner, the etching / cleaning process is divided into a wet type and a dry type, and the wet type is divided into a batch type and a spin type.

[0003] In the spin type, after fixing the substrate to a support module capable of processing one substrate, a chemical liquid is supplied to the substrate through a nozzle while rotating the substrate, so that the chemical liquid is diffused to the entire surface of the substrate by centrifugal force. SUMMARY

[0004] However, since the chemical liquid is continuously supplied while rotating the substrate in the etching / cleaning process, an excessive amount of the chemical liquid is used compared to the etching amount or the cleaning amount.

[0005] The technical problem to be solved by the present application is to provide a substrate processing apparatus and method for saving a chemical liquid.

[0006] The technical problem of the present application is not limited to the above-mentioned technical problem, and other technical problems not mentioned can be clearly understood by those skilled in the art through the following description.

[0007] One aspect of the substrate processing apparatus of the present application for solving the above-mentioned technical problem includes a support module for seating a substrate and capable of rotating, a housing surrounding the periphery of the support module and including a first bowl and a second bowl disposed inside the first bowl, a first chemical liquid supply module for spraying a first chemical liquid to the substrate, and a second chemical liquid supply module for spraying a second chemical liquid different from the first chemical liquid to the substrate, wherein the first bowl is positioned to correspond to the substrate, and the first chemical liquid supply module supplies the first chemical liquid while the support module rotates at a first speed, the second bowl is positioned to correspond to the substrate, and the second chemical liquid supply module supplies the second chemical liquid at a first flow rate while the support module rotates at a second speed equal to or less than the first speed, and the second bowl is positioned to correspond to the substrate, and the second chemical liquid supply module does not supply the second chemical liquid or supplies the second chemical liquid at a second flow rate less than the first flow rate while the support module rotates at a third speed less than the second speed.

[0008] Another aspect of the substrate processing apparatus of the present application for solving the above technical problem includes: a support module for placing a substrate and rotatable; a housing surrounding a circumference of the support module and including a first bowl and a second bowl disposed inside the first bowl; a first chemical liquid supply module for spraying a first chemical liquid to the substrate; and a second chemical liquid supply module for spraying a second chemical liquid different from the first chemical liquid to the substrate, wherein the first bowl is positioned to correspond to the substrate, and while the support module is rotated at a first speed, the first chemical liquid supply module supplies the first chemical liquid, the housing moves the second bowl to a position corresponding to the substrate while the support module is rotated at a second speed smaller than the first speed, and the first chemical liquid supply module supplies the first chemical liquid, the second bowl is positioned to correspond to the substrate, and while the support module is rotated at the second speed, the second chemical liquid supply module supplies the second chemical liquid at a first flow rate, the second bowl is positioned to correspond to the substrate, and while the support module is rotated at a third speed smaller than the second speed, the second chemical liquid supply module interrupts the supply of the second chemical liquid, the housing moves the first bowl to a position corresponding to the substrate while the support module is rotated at a fourth speed greater than the first speed, and the second chemical liquid supply module supplies the second chemical liquid at a second flow rate greater than the first flow rate, and the first bowl is positioned to correspond to the substrate, and while the support module is rotated at the fourth speed, the first chemical liquid supply module supplies the first chemical liquid.

[0009] One aspect of the substrate processing method of the present application for solving the above another technical problem includes: providing a substrate processing apparatus including: a support module for placing a substrate and rotatable; a housing surrounding a circumference of the support module and including a first bowl and a second bowl disposed inside the first bowl; a first chemical liquid supply module for spraying a first chemical liquid to the substrate; and a second chemical liquid supply module for spraying a second chemical liquid different from the first chemical liquid to the substrate; positioning the first bowl to correspond to the substrate, and while the support module is rotated at a first speed, the first chemical liquid supply module supplies the first chemical liquid; positioning the second bowl to correspond to the substrate, and while the support module is rotated at a second speed equal to or smaller than the first speed, the second chemical liquid supply module supplies the second chemical liquid at a first flow rate; and positioning the second bowl to correspond to the substrate, and while the support module is rotated at a third speed smaller than the second speed, the second chemical liquid supply module does not supply the second chemical liquid, or supplies the second chemical liquid at a second flow rate smaller than the first flow rate.

[0010] Details of other embodiments are included in the detailed description and the accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0011] Figure 1 is a cross-sectional view for explaining a substrate processing apparatus according to an embodiment of the present application.

[0012] Figure 2 is a view for explaining a driving method of the substrate processing apparatus of Figure 1 .

[0013] Figure 3 is a view for explaining an effect of the substrate processing apparatus of Figure 1 .

[0014] Figure 4 and Figure 5 is a cross-sectional view for explaining a substrate processing apparatus according to another embodiment of the present application.

[0015] Figure 6 is a view for explaining a driving method of the substrate processing apparatus of Figure 4 and Figure 5 .

[0016] Figure 7 is a view for explaining another example of a driving method of the substrate processing apparatus of Figure 4 and Figure 5 .

[0017] Figure 8 is a cross-sectional view for explaining a substrate processing apparatus according to still another embodiment of the present application.

[0018] Figure 9 is a view for explaining an example of a driving method of the substrate processing apparatus of Figure 8 .

[0019] Figure 10 is a view for explaining another example of a driving method of the substrate processing apparatus of Figure 8 .

[0020] EXPLANATION OF REFERENCE NUMERALS

[0021] 200: housing

[0022] 220: inner bowl (third bowl or tertiary bowl)

[0023] 240: intermediate bowl (second bowl or secondary bowl)

[0024] 220: outer bowl (first bowl or primary bowl)

[0025] 340: support module

[0026] 360: Lifting Module

[0027] 370: Drying module

[0028] 380: First Medicine Supply Module

[0029] 390: Second Medicine Supply Module Detailed Implementation

[0030] Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings. The advantages and features of the present invention, as well as methods for achieving these advantages and features, will be explained below with reference to the accompanying drawings. Figure 1 The invention becomes clear from the detailed description of the embodiments. However, the invention is not limited to the embodiments disclosed below, but can be implemented in many different forms. These embodiments are provided only to make the disclosure of the invention complete and to fully inform those skilled in the art of the scope of the invention, which is defined only by the scope of the claims. Throughout the specification, the same reference numerals refer to the same constituent elements.

[0031] When a component or layer is referred to as "on" or "above" another component or layer, it includes not only that it is directly above another component or layer, but also that other layers or other components are in between. Conversely, when a component is referred to as "directly" on or directly above another component, it indicates that there are no other components or layers in between.

[0032] To readily describe the relationship between one element or component and another, as shown in the figure, spatial relative terms such as "below," "below," "lower," "above," and "upper" can be used. It should be understood that, in addition to the orientation shown in the figure, spatial relative terms also include terms indicating the different orientations of the elements during use or operation. For example, when the element shown in the figure is flipped, an element described as "below" or "below" of another element may be located "above" of that element. Therefore, the exemplary term "below" can include both "below" and "above" orientations. An element may also be oriented in another direction, thus allowing the spatial relative terms to be interpreted according to orientation.

[0033] Although the terms "first", "second", and the like are used to describe various elements, constituent elements, and / or parts, the elements, constituent elements, and / or parts are not limited by these terms. These terms are used only to distinguish one element, constituent element, and / or part from another element, constituent element, and / or part. Therefore, a first element, a first constituent element, or a first part mentioned below can be a second element, a second constituent element, or a second part within the technical idea of the present application.

[0034] The terms used in the present specification are for the purpose of describing embodiments and are not intended to limit the present application. In the present specification, the singular forms are intended to include the plural forms unless the context clearly indicates otherwise. The "comprises" and / or "comprising", when used in the specification, do not exclude the presence or addition of one or more other constituents, steps, operations, and / or elements.

[0035] If not otherwise defined, all terms used in the present specification, including technical and scientific terms, can be used in the meaning commonly understood by those of ordinary skill in the art to which the present application belongs. Also, unless explicitly stated otherwise, the terms defined in generally used dictionaries are not ideally or excessively interpreted.

[0036] Hereinafter, embodiments of the present application will be described in detail with reference to the accompanying drawings. In describing the embodiments, the same or corresponding components are given the same reference numerals regardless of the drawings and repetitive description thereof will be omitted.

[0037] Figure 1 is a cross-sectional view for explaining a substrate processing apparatus according to an embodiment of the present application.

[0038] Figure 2 is a view for explaining a driving method of the substrate processing apparatus of Figure 1 . Figure 3 is a view for explaining an effect of the substrate processing apparatus of Figure 1 .

[0039] First, referring to Figure 1 , a substrate processing apparatus 1 according to an embodiment of the present application includes a housing 200, a support module 340, a lift module 360, and a first chemical liquid supply module 380.

[0040] The housing 200 provides a processing space in which a process is performed, and a central portion of an upper side thereof is open. The housing 200 includes a plurality of bowl-shaped members 220, 240, 260. According to one example, the housing 200 includes an inner bowl-shaped member (or third bowl-shaped member or tertiary bowl-shaped member) 220, an intermediate bowl-shaped member (or second bowl-shaped member or secondary bowl-shaped member) 240, and an outer bowl-shaped member (or first bowl-shaped member or primary bowl-shaped member) 260. The inner bowl-shaped member 220, the intermediate bowl-shaped member 240, and the outer bowl-shaped member 260 can separate and recover different solutions from each other among solutions used for a process. The inner bowl-shaped member 220 is provided in a hollow cylindrical shape around the support module 340, the intermediate bowl-shaped member 240 is provided in a hollow cylindrical shape around the inner bowl-shaped member 220, and the outer bowl-shaped member 260 is provided in a hollow cylindrical shape around the intermediate bowl-shaped member 240. That is, the intermediate bowl-shaped member 240 can be disposed inside the outer bowl-shaped member 260, and the inner bowl-shaped member 220 can be disposed inside the intermediate bowl-shaped member 240. An inner side space of the inner bowl-shaped member 220, a space between the inner bowl-shaped member 220 and the intermediate bowl-shaped member 240, and a space between the intermediate bowl-shaped member 240 and the outer bowl-shaped member 260 respectively function as flow inlets of solutions into the inner bowl-shaped member 220, the intermediate bowl-shaped member 240, and the outer bowl-shaped member 260. The inner bowl-shaped member 220, the intermediate bowl-shaped member 240, and the outer bowl-shaped member 260 are respectively connected with recovery lines 225, 245, 265 which vertically extend in a direction of a lower side of a bottom surface thereof. Each of the recovery lines 225, 245, 265 discharges a solution which has flowed in through the inner bowl-shaped member 220, the intermediate bowl-shaped member 240, and the outer bowl-shaped member 260, respectively. The discharged solution can be reused by an external solution regeneration system (not shown).

[0041] Next, the shapes of the inner bowl-shaped member 220, the intermediate bowl-shaped member 240, and the outer bowl-shaped member 260 will be described in more detail.

[0042] The inner bowl-shaped member 220 includes an outer wall 222, a bottom wall 224, an inner wall 226, and a guide wall 228. The outer wall 222, the bottom wall 224, the inner wall 226, and the guide wall 228 each have a ring shape. The outer wall 222 has an inclined wall 222a which is inclined downward in a direction away from the support module 340, and a vertical wall 222b which vertically extends downward from a lower end of the inclined wall 222a. The bottom wall 224 extends horizontally from the lower end of the vertical wall 222b in a direction toward the support module 340. A terminal end of the bottom wall 224 extends to a position which is the same as an upper end of the inclined wall 222a. The inner wall 226 extends vertically upward from an inner terminal end of the bottom wall 224. The inner wall 226 extends to a position where an upper end thereof is separated by a certain distance from the upper end of the inclined wall 222a. A space between the inner wall 226 and the inclined wall 222a which is separated in the vertical direction functions as the flow inlet 227 of the inner bowl-shaped member 220 described above.

[0043] A plurality of openings 223 are formed in the inner wall 226 to form a ring-shaped arrangement. Each opening 223 is provided in a slit shape. The openings 223 function as exhaust ports through which gas flowing into the inner bowl 220 is discharged to the lower space in the support module 340 and then to the outside.

[0044] The guide wall 228 has an inclined wall 228a inclined downward from the upper end of the inner wall 226 in a direction away from the support module 340, and a vertical wall 228b extending vertically downward from the lower end of the inclined wall 228a in the vertical direction. The lower end of the vertical wall 228b is spaced apart from the bottom wall 224 by a certain distance. The guide wall 228 guides the chemical liquid flowing in through the flow inlet 227 so as to smoothly flow to the space 229 surrounded by the outer wall 222, the bottom wall 224, and the inner wall 226.

[0045] The intermediate bowl 240 has an outer wall 242, a bottom wall 244, an inner wall 246, and a protruding wall 248. The outer wall 242, the bottom wall 244, and the inner wall 246 of the intermediate bowl 240 have substantially similar shapes to those of the outer wall 222, the bottom wall 224, and the inner wall 226 of the inner bowl 220, but have a size larger than that of the inner bowl 220 so as to surround the inner bowl 220. The upper end of the inclined wall 242a of the outer wall 242 of the intermediate bowl 240 and the upper end of the inclined wall 222a of the outer wall 222 of the inner bowl 220 are spaced apart in the vertical direction by a certain distance, and the spaced-apart space functions as a flow inlet 247 of the intermediate bowl 240. The protruding wall 248 extends vertically downward from the end of the bottom wall 244. The upper end of the inner wall 246 of the intermediate bowl 240 is in contact with the end of the bottom wall 224 of the inner bowl 220. Slit-shaped exhaust ports 243 for discharging gas are provided in a ring-shaped arrangement on the inner wall 246 of the intermediate bowl 240.

[0046] The outer bowl 260 has an outer wall 262, a bottom wall 264, and a protruding wall 270. The outer wall 262 of the outer bowl 260 has a similar shape to the outer wall 242 of the middle bowl 240, but has a size larger than the middle bowl 240 to surround the middle bowl 240. The inclined wall 262a of the outer bowl 260 is inclinedly extended upward along the inner side direction from the upper end of the vertical wall 262b. The inclined wall 262a is provided as the upper wall of the center-opened housing 200. The inclined wall 262a of the outer bowl 260 is formed with discharge holes 263a. The discharge holes 263a are adjacent to the vertical wall. The discharge holes 263a are provided as a plurality of. Each of the discharge holes 263a can be formed along the circumferential direction of the inclined wall 262a. The plurality of discharge holes 263a can be provided to be combined with each other to have a ring shape. The protruding wall 270 is provided to protrude upward from the upper end of the vertical wall 262b. The protruding wall 270 is provided to have a ring shape having the same diameter as the vertical wall 262b. The protruding wall 270 and the inclined wall 262a are combined with each other to form a liquid storage space 270a. The liquid storage space 270a is provided to communicate with the inner space of the outer bowl 220 through the discharge holes 263a. The upper end of the inclined wall 262a of the outer bowl 260 is spaced apart from the upper end of the inclined wall 242b of the middle bowl 240 in the up-and-down direction by a certain distance, and the spaced-apart space functions as a flow inlet 267 of the outer bowl 260. The bottom wall 264 has a substantially disc shape, and an opening in which a support shaft (rotation shaft) 348 is inserted is formed in the center thereof. The outer bowl 260 functions as an outer wall of the entire housing 200.

[0047] The support module 340 supports and rotates the substrate W in the process space of the housing 200. The support module 340 includes a body 342, support pins 344, chuck pins 346, and a support shaft (or rotation shaft) 348. The body 342 has an upper surface which is substantially provided as a circle when viewed from above. The support shaft 348 which is rotatable by a motor 349 is fixedly coupled to the bottom surface of the body 342.

[0048] The support pins 344 are provided as a plurality of. The support pins 344 are arranged at a predetermined interval on the edge portion of the upper surface of the body 342, and protrude upward from the body 342. The support pins 344 are arranged to have a ring shape as a whole by the combination between them. The support pins 344 support the back edge of the substrate W so that the substrate W is spaced apart from the upper surface of the body 342 by a certain distance.

[0049] Multiple locking pins 346 are provided. The locking pins 346 are arranged further from the center of the body 342 than the support pins 344. The locking pins 346 are configured to project upwards from the body 342. The locking pins 346 support the side of the substrate W such that the substrate W does not disengage laterally from its upright position when the support module 340 rotates. The locking pins 346 are configured to be linearly movable between a waiting position and a supporting position along the radial direction of the body 342. The waiting position is a position further from the center of the body 342 than the supporting position. When the substrate W is loaded into or unloaded from the support module 340, the locking pins 346 are in the waiting position, and when processing is performed on the substrate W, the locking pins 346 are in the supporting position. The locking pins 346 contact the side of the substrate W in the supporting position.

[0050] The lifting module 360 ​​can move the housing 200 linearly in the vertical direction. As the housing 200 moves up and down, its relative height to the support module 340 changes.

[0051] This lifting module 360 ​​includes a support 362, a moving shaft 364, and a driver 366. The support 362 is fixedly mounted on the outer wall 262 of the housing 200, and the moving shaft 364, which moves vertically via the driver 366, is fixedly connected to the support 362. When the substrate W is placed on or lifted from the support module 340, the housing 200 descends, causing the support module 340 to protrude upwards from the housing 200. Furthermore, during the process, the height of the housing 200 is adjusted so that the liquid medicine flows into the pre-set bowl-shaped members 220, 240, and 260, depending on the type of liquid medicine supplied to the substrate W. Conversely, the lifting module 360 ​​can move the support module 340 vertically.

[0052] The first solution supply module 380 supplies a first solution to the substrate W. The first solution supply module 380 includes a first nozzle 384, a nozzle support 382, ​​a first solution storage unit 388, etc. The first nozzle 384 can wait in a first waiting position and then move to a first supply position to spray the first solution onto the substrate W. Here, the first solution can be an etchant, such as diluted HF (DHF). The type of the first solution can vary depending on the target substance.

[0053] The following is for reference Figure 2 right Figure 1 The driving method of the substrate processing apparatus will be described. Figure 2 (a) is a view used to illustrate the rotational speed of the support module 340 in the substrate processing process, and Figure 2 (b) is a view illustrating the flow rate of the first liquid ejected from the first liquid supply module 380 in the substrate processing process.

[0054] Referring to Figure 2 In period 0-t1, the support module 340 rotates at a first speed RPM1 to rotate the substrate W. For example, the first speed RPM1 can be about 100-500 RPM. Also, during the rotation of the support module 340 to rotate the substrate W, the first chemical supply module 380 supplies the first chemical (etchant) at a first flow rate MF1. In period 0-t1, a liquid film is formed on the substrate W by the first chemical. For example, period 0-t1 can be 10 seconds or less (e.g., about 3-10 seconds).

[0055] Next, in period t1-t2, the support module 340 reduces the rotation speed to rotate at a second speed RPM2. For example, the second speed RPM2 can be 0-50 RPM. In particular, during the rotation at the second speed RPM2, the first chemical can not be supplied (see Figure 2 (a1) of (b). Alternatively, even if the first chemical is supplied, the first chemical can be supplied at a second flow rate MF2 that is considerably smaller than the first flow rate MF1 (see Figure 2 (a2) of (b). In period t1-t2, the liquid film formed during period 0-t1 is maintained, and etching of the substrate W is performed through this liquid film. Period t1-t2 can be a time longer than period 0-t1. For example, period t1-t2 can vary depending on the kind, shape, position, etc. of the etching target substance, and can be, for example, about 1-5 minutes.

[0056] Here, since the first chemical is not supplied during period t1-t2, or is supplied at the second flow rate MF2 that is smaller than the first flow rate MF1, the consumption amount of the first chemical can be significantly reduced.

[0057] Next, in period t2-t3, the support module 340 increases the rotation speed to rotate at a third speed RPM3 higher than the first speed RPM1. The third speed RPM3 can be about 1000-1400 RPM, and can be, for example, 1300 RPM. Also, the first chemical can be supplied at a third flow rate MF3 greater than the first flow rate MF1. Period t2-t3 can be a time shorter than period t1-t2, and can be a time equal to or longer than period 0-t1. For example, period t2-t3 can be 10-30 seconds.

[0058] Specifically, in the period t1 to t2, the first liquid is not supplied or is supplied at a small flow rate MF2, and the rotation speed of the support module 340 is also small. Therefore, the liquid film formed during the period 0 to t1 can shrink, and the liquid film thickness in the partial area of the substrate W can also decrease below the reference thickness. As described above, even if the liquid film dries in the partial area of the substrate W, the possibility of generating a defect in the area is high. Therefore, in the period t2 to t3 directly connected to the period t1 to t2, the first liquid can be supplied at a third flow rate MF3 while the support module 340 is rapidly rotated at a third speed RPM3 to quickly regenerate the liquid film, thereby preventing the substrate W from drying. Since the period t2 to t3 is a relatively short time compared to the period t1 to t2, the amount of liquid consumed in the period t2 to t3 is not large.

[0059] Furthermore, if the thickness of the liquid film does not decrease below the reference thickness in the period t1 to t2, the process of the period t2 to t3 (i.e., the first liquid is supplied at the third flow rate MF3 while the support module 340 is rotated at the third speed RPM3) can be omitted.

[0060] Furthermore, the period t1 to t2 is performed in a state in which the inner bowl 220 is positioned to correspond to the substrate W. Figure 1 Further, the entire period 0 to t3 described above can be performed in a state in which the inner bowl 220 is positioned to correspond to the substrate W.

[0061] In the present specification, "the bowl A is in a position corresponding to the substrate W" means a state in which a virtual plane formed by a main surface of the substrate W reaches the flow inlet of the bowl A. As shown in FIG. 2, when the virtual plane extending the main surface of the substrate W reaches the flow inlet 227, it can be understood that the inner bowl 220 is positioned to correspond to the substrate W. Unlike the drawing, if the virtual plane extending the main surface of the substrate W reaches the flow inlet 267, it can be understood that the outer bowl 260 is positioned to correspond to the substrate W. Figure 1

[0062] Therefore, when the outer bowl 260 is positioned to correspond to the substrate W, the substrate W is disposed close to the open upper central portion of the housing 200. In contrast, when the inner bowl 220 is positioned to correspond to the substrate W, the substrate W is disposed away from the open upper central portion of the housing 200.

[0063] Here, reference is made to FIG. 2. Figure 3 ​When the inner bowl 220 is positioned at a position corresponding to the substrate W, the open ratio is increased, the air exchange rate is improved, and the amount of air discharged is increased. This is because, as shown in the drawing, air can flow through the flow inlets 227, 247, 267 of the plurality of bowls 220, 240, 260. Therefore, the air velocity inside the housing 200 is reduced, and the edge vicinity (region A) of the substrate W also becomes a mild condition. That is, the air velocity in the edge vicinity (region A) of the substrate W is relatively low.

[0064] On the contrary, if the outer bowl 260 is positioned at a position corresponding to the substrate W, air mainly flows through the flow inlet 267 of the outer bowl 260, and therefore the air velocity in the edge vicinity of the substrate is relatively high, unlike the drawing.

[0065] In the period t1 to t2, no chemical liquid is supplied or is supplied at a small flow rate MF2, and the rotation speed of the support module 340 is also small. In the period t1 to t2, if the outer bowl 260 is positioned to correspond to the substrate W, the air velocity in the edge vicinity of the substrate W is relatively high, and therefore it is difficult to maintain the thickness of the liquid film formed on the substrate W.

[0066] On the contrary, as in the embodiment of the present application, if the inner bowl 220 is positioned to correspond to the substrate W in the period t1 to t2, since the air velocity in the edge vicinity of the substrate W is relatively low, it is easy to maintain the thickness of the liquid film formed on the substrate W. Therefore, even if no chemical liquid is supplied in the period t1 to t2, the liquid film can be maintained at an appropriate level, and thus it is possible to maintain the etch rate at a target level.

[0067] Figure 4 and Figure 5 is a sectional view for explaining a substrate processing apparatus according to another embodiment of the present application. Figure 6 is a sectional view for explaining Figure 4 and Figure 5 is a view for explaining one example of a driving method of the substrate processing apparatus of Figures 1 to 3 . Hereinafter, the description of the contents substantially the same as those explained with will be omitted.

[0068] First, referring to Figure 4 and Figure 5 , a substrate processing apparatus 2 according to another embodiment of the present application includes a housing 200, a support module 340, a lift module 360, a first chemical liquid supply module 380, and a second chemical liquid supply module 390.

[0069] The second drug supply module 390 supplies a second drug solution to the substrate W. The second drug supply module 390 includes second nozzles 394a and 394b, a second drug solution storage unit 398, etc. Here, the second drug solution can be a rinsing solution, for example, deionized water (DIW). The type of second drug solution can vary depending on the target substance.

[0070] The second nozzles 394a and 394b can be multiple, wherein some nozzles 394a can spray the second liquid into the central region of the substrate W, and other nozzles 394b can spray the second liquid into the edge region of the substrate W. Multiple second nozzles 394a and 394b can spray the second liquid simultaneously, or, according to the design, some nozzles (e.g., 394b) can spray first, and other nozzles (e.g., 394a) can spray later.

[0071] The second nozzles 394a and 394b can be movable and can wait in a second waiting position before moving to a second supply position to spray the second liquid onto the substrate W. Alternatively, unlike the illustration, the second nozzles 394a and 394b can also be fixed and can be positioned at a specific location in the chamber without moving.

[0072] Here, the position (height) of the housing 200 when the first liquid supply module 380 sprays the first liquid onto the substrate W can be the same as the position (height) of the housing 200 when the second liquid supply module 390 sprays the second liquid onto the substrate W.

[0073] Specifically, such as Figure 4 As shown, the second nozzles 394a and 394b of the second liquid supply module 390 move to the second supply position and spray the second liquid. The first nozzle 384 of the first liquid supply module 380 waits in the first waiting position. Here, when the second liquid supply module 390 sprays the second liquid onto the substrate W, the outer bowl-shaped member 260 can be positioned to correspond to the substrate W. That is, the virtual plane of the main surface of the substrate W is extended to reach the inlet 267.

[0074] like Figure 5 As shown, the first nozzle 384 of the first liquid supply module 380 moves to the first supply position and sprays the first liquid. The second nozzles 394a and 394b of the second liquid supply module 390 move to the second waiting position and wait. Here, when the first liquid supply module 380 sprays the first liquid onto the substrate W, the internal bowl-shaped member 220 can be positioned to correspond to the substrate W. That is, the virtual plane of the main surface of the substrate W is extended to reach the inlet 227.

[0075] Reference Figure 6, the first cleaning step S10, the etching step S20, and the second cleaning step S30 are performed in this order. The etching step S20 is substantially the same as the etching step described above. Figure 2

[0076] During the period 0 ~ ta, the support module 340 rotates at a first speed RPM1 to rotate the substrate W. For example, the first speed RPM1 can be about 100 ~ 500 RPM. Further, during the rotation of the substrate W by the support module 340, the second chemical supply module 390 supplies the second chemical (a rinsing liquid). During the period 0 ~ ta, the substrate W is cleaned by the first chemical.

[0077] Here, when the second chemical supply module 390 sprays the second chemical toward the substrate W, the outer bowl (i.e., the first bowl) 260 can be positioned to correspond to the substrate W.

[0078] During the period ta ~ tb, the support module 340 rotates at the first speed RPM1, and the second chemical supply module 390 supplies the second chemical.

[0079] During the supply of the second chemical by the second chemical supply module 390, the lift module 360 moves the housing 200 upward. During the supply of the second chemical by the second chemical supply module 390, the first nozzle 384 of the first chemical supply module 380 moves from the first standby position to the first supply position. At the end of the period ta ~ tb (i.e., at time tb), the inner bowl (i.e., the third bowl) 220 corresponds to the substrate W, and the first nozzle 384 reaches the first supply position.

[0080] During the period tb ~ tl, the support module 340 rotates at the first speed RPM1 to rotate the substrate W, and the first chemical supply module 380 supplies the first chemical (an etchant) at a first flow rate MF1. During the period tb ~ tl, a liquid film is formed on the substrate W by the first chemical.

[0081] During the supply of the first chemical by the first chemical supply module 380, the second nozzles 394a, 394b can move from the second supply position to the second standby position.

[0082] During the period tl ~ t2, the support module 340 reduces the rotation speed to rotate at a second speed RPM2. During the rotation at the second speed RPM2, the first chemical can not be supplied. Alternatively, even if the first chemical is supplied, the first chemical can be supplied at a second flow rate MF2 that is considerably smaller than the first flow rate MF1. During the period tl ~ t2, the liquid film formed during the period 0 ~ tl is maintained, and etching of the substrate W is performed through this liquid film.

[0083] ​During time intervals t2 and t3, the support module 340 increases its rotational speed to a third speed RPM3, which is higher than the first speed RPM1. The first liquid medicine can be supplied at a third flow rate MF3, which is greater than the first flow rate MF1.

[0084] During the supply of the first liquid medicine by the first liquid medicine supply module 380, the lifting module 360 ​​moves the housing 200 downward. During the supply of the first liquid medicine by the first liquid medicine supply module 380, the second nozzles 394a and 394b of the second liquid medicine supply module 390 move from the second waiting position to the second supply position. At the end of the time period t2 to t3 (i.e., time t3), the outer bowl-shaped member (i.e., the first bowl-shaped member) 260 corresponds to the substrate W, and the second nozzles 394a and 394b reach the second supply position.

[0085] During time periods t3 to t4, the support module 340 rotates at a third speed RPM3 to rotate the substrate W. Furthermore, during the rotation of the substrate W by the support module 340, the second solution supply module 390 supplies a second solution (rinsing solution). During time periods t3 to t4, the substrate W is cleaned with the second solution. Unlike the illustration, the rotation speed of the support module 340 during time periods t3 to t4 may also be greater than the rotation speed during time periods t2 to t3.

[0086] Figure 7 It is used for explanation Figure 4 and Figure 5 A view of another example of the driving method of the substrate processing apparatus. Hereinafter, for ease of explanation, details related to the use of... Figures 4 to 6 The content described is essentially the same.

[0087] Reference Figure 7 The process is carried out in the following order: first cleaning step S10, then etching step S20, and finally cleaning step S30.

[0088] During the time period ta to tb of the initial cleaning step S10, the support module 340 rotates at a fourth speed RPM1, which is lower than the first speed RPM1, to rotate the substrate W. The fourth speed RPM1 can be approximately 100 to 300 RPM.

[0089] Next, during the time intervals tb to t1 of etching step S20, the support module 340 also rotates at a fourth speed RPM1 to rotate the substrate W.

[0090] Figure 8 This is a cross-sectional view used to illustrate a substrate processing apparatus according to another embodiment of the present invention. Figure 9 It is used for explanation Figure 8 A view of an example driving method for a substrate processing apparatus. Hereinafter, for ease of explanation, details using... Figures 1 to 7 The content described is essentially the same.

[0091] First, referring to Figure 8 , the substrate processing apparatus 3 according to a further embodiment of the present application includes a housing 200, a support module 340, a lift module 360, a first chemical liquid supply module 380, a second chemical liquid supply module 390, and a drying module 370.

[0092] The drying module 370 is used to dry the substrate W. The drying module 370 includes a third nozzle 372a, a fourth nozzle 372b, a drying liquid storage portion 378a, a drying gas storage portion 378b, and the like. The drying liquid and the drying gas can vary depending on the kind of the rinsing liquid. When the rinsing liquid is DIW, for example, the drying liquid can be isopropyl alcohol (IPA), and the drying gas can be nitrogen.

[0093] In the drawings, the third nozzle 372a and the fourth nozzle 372b are shown in a state of being separated from each other, but are not limited thereto. That is, the third nozzle 372a and the fourth nozzle 372b can also be formed in one body.

[0094] The fourth nozzle 372b can spray the drying gas onto the substrate W in a state of being stationary, for example, in a state of being stationary at the center region of the substrate W. Alternatively, the fourth nozzle 372b can spray the drying gas onto the substrate W while moving, for example, moving (i.e., scan out) from the center region of the substrate W toward the edge region.

[0095] Alternatively, it can also be that the third nozzle 372a sprays the drying liquid onto the substrate W while moving, and the fourth nozzle 372b sprays the drying gas onto the substrate W while following the third nozzle 372a.

[0096] Here, referring to Figure 9 , the order of the pre-cleaning step S10, the etching step S20, the post-cleaning step S30, the drying step S40, S50 is performed. In the drying step S40, drying is performed by the drying liquid, and in the drying step S50, drying is performed by the drying gas.

[0097] The etching step S20 is substantially the same as that described with reference to Figure 2 , and the pre-cleaning step S10 and the post-cleaning step S30 are substantially the same as that described with reference to Figure 6 . Therefore, the description of the steps S10, S20, S30 will be omitted below.

[0098] In the period t4-t5, the support module 340 rotates at the third speed RPM3 to rotate the substrate W. For example, the third speed RPM3 can be about 1000-1400 RPM, for example, can be 1300 RPM. Further, during the support module 340 rotates the substrate W, the drying module 370 supplies the drying liquid through the third nozzle 372a. That is, in the period t4-t5, the surface replacement process of replacing the surface of the rinse liquid with the drying liquid is performed.

[0099] Here, when the drying module 370 ejects the drying liquid toward the substrate W, the outer bowl (i.e., the first bowl) 260 can be positioned to correspond to the substrate W.

[0100] In the period t5-t6, the support module 340 reduces the rotation speed to rotate at the first speed RPM1, thereby rotating the substrate W. The drying module 370 can also continue to supply the drying liquid through the third nozzle 372a. Alternatively, the drying liquid supply can also be suspended. By rotating at the low rotation speed RPM1, the drying liquid and the second chemical liquid (i.e., the rinse liquid) can be well mixed. That is, in the period t5-t6, the stirring process of dispersing the rinse liquid in the drying liquid is performed.

[0101] In the period t6-t7, the support module 340 increases the rotation speed to rotate at the fifth speed RPM5, thereby rotating the substrate W. The drying module 370 supplies the drying gas through the fourth nozzle 372b. By supplying the drying gas, the stirred liquid can be removed during the period t5-t6.

[0102] Figure 10 is a view for explaining another example of a driving method of a substrate processing apparatus of Figure 8 . Hereinafter, for convenience of explanation, the description of the contents substantially the same as those explained with Figure 8 and Figure 9 is omitted.

[0103] Referring to Figure 10 , the process is performed in the order of the pre-cleaning step S10, the etching step S20, the post-cleaning step S30, the drying step S40, S50.

[0104] In the period t3-t3a of the post-cleaning step S30, the support module 340 rotates at the third speed RPM3 to rotate the substrate W. Further, during the support module 340 rotates the substrate W, the second chemical liquid supply module 390 supplies the second chemical liquid (the rinse liquid).

[0105] Next, in the period t3a-t4, the support module 340 reduces the rotation speed to rotate at the first speed RPM1, thereby rotating the substrate W. Further, during the support module 340 rotates the substrate W, the second chemical liquid supply module 390 continues to supply the second chemical liquid (the rinse liquid).

[0106] Next, in the period t4 to t6, the support module 340 rotates at the first speed RPM1 to rotate the substrate W. Also, during the rotation of the substrate W by the support module 340, the drying module 370 supplies a drying liquid through the third nozzle 372a.

[0107] Next, in the period t6 to t7, the support module 340 increases the rotation speed to rotate at the fifth speed RPM5, thereby rotating the substrate W. The drying module 370 supplies a drying gas through the fourth nozzle 372b.

[0108] The embodiments of the present application have been described above with reference to the accompanying drawings, but it will be understood by those of ordinary skill in the art that the present application can be embodied in other specific forms without changing the technical idea or essential characteristics thereof. Therefore, it should be understood that the above-described embodiments are exemplary in all aspects and are not restrictive.

Claims

1. A substrate processing apparatus comprising: a support module for placing a substrate and capable of rotation; a housing capable of changing height with respect to the support module, surrounding a periphery of the support module, and including a first bowl and a second bowl arranged inside the first bowl; a first chemical liquid supply module for spraying a first chemical liquid to the substrate; and a second chemical liquid supply module for spraying a second chemical liquid different from the first chemical liquid to the substrate, wherein the first bowl is positioned to correspond to the substrate, i.e., so that a virtual plane extending a main surface of the substrate reaches a flow inlet of the first bowl, and the first chemical liquid supply module supplies the first chemical liquid while the support module rotates at a first speed, the second bowl is positioned to correspond to the substrate, i.e., so that the virtual plane extending the main surface of the substrate reaches a flow inlet of the second bowl, and the second chemical liquid supply module supplies the second chemical liquid at a first flow rate while the support module rotates at a second speed equal to or smaller than the first speed, and the second bowl is positioned to correspond to the substrate, and the second chemical liquid supply module does not supply the second chemical liquid or supplies the second chemical liquid at a second flow rate smaller than the first flow rate while the support module rotates at a third speed smaller than the second speed, after the second chemical liquid supply module does not supply the second chemical liquid or supplies the second chemical liquid at the second flow rate, the second chemical liquid supply module supplies the second chemical liquid at a third flow rate while the support module rotates at a fourth speed greater than the second speed.

2. The substrate processing apparatus according to claim 1, wherein the third flow rate is greater than the first flow rate.

3. The substrate processing apparatus according to claim 1, wherein during the second chemical liquid supply module supplies the second chemical liquid at the third flow rate, the housing moves the first bowl to a position corresponding to the substrate.

4. The substrate processing apparatus according to claim 3, wherein after the second chemical liquid supply module supplies the second chemical liquid at the third flow rate, the first chemical liquid supply module supplies the first chemical liquid while the support module rotates at the fourth speed in a state where the first bowl is positioned to correspond to the substrate.

5. A substrate processing apparatus comprising: a support module for placing a substrate and capable of rotation; a housing capable of changing height with respect to the support module, surrounding a periphery of the support module, and including a first bowl and a second bowl arranged inside the first bowl; a first chemical liquid supply module for spraying a first chemical liquid to the substrate; and a second chemical liquid supply module for spraying a second chemical liquid different from the first chemical liquid to the substrate, wherein the first bowl is positioned to correspond to the substrate, i.e., so that a virtual plane extending a main surface of the substrate reaches a flow inlet of the first bowl, and the first chemical liquid supply module supplies the first chemical liquid while the support module rotates at a first speed, ​ ​ the second bowl is positioned to correspond to the substrate, i.e., so that the virtual plane extending the main surface of the substrate reaches the flow inlet of the second bowl, and the second liquid supply module supplies the second liquid at a first flow rate while the support module rotates at a second speed equal to or less than the first speed, and the second bowl is positioned to correspond to the substrate, and the second liquid supply module does not supply the second liquid or supplies the second liquid at a second flow rate less than the first flow rate while the support module rotates at a third speed less than the second speed, the process in which the second liquid supply module supplies the second liquid at the first flow rate proceeds for a first time, and the process in which the second liquid supply module does not supply the second liquid or supplies the second liquid at the second flow rate proceeds for a second time longer than the first time, after the second liquid supply module does not supply the second liquid or supplies the second liquid at the second flow rate, the second liquid supply module supplies the second liquid at a third flow rate while the support module rotates at a fourth speed greater than the second speed during a third time longer than the first time and shorter than the second time.

6. A substrate processing apparatus comprising: a support module for placing a substrate and capable of rotating; a housing capable of changing height with respect to the support module, surrounding the periphery of the support module, and including a first bowl and a second bowl disposed inside the first bowl; a first liquid supply module for spouting a first liquid toward the substrate; and a second liquid supply module for spouting a second liquid different from the first liquid toward the substrate, wherein the first bowl is positioned to correspond to the substrate, i.e., so that a virtual plane extending the main surface of the substrate reaches the flow inlet of the first bowl, and the first liquid supply module supplies the first liquid while the support module rotates at a first speed, the second bowl is positioned to correspond to the substrate, i.e., so that the virtual plane extending the main surface of the substrate reaches the flow inlet of the second bowl, and the second liquid supply module supplies the second liquid at a first flow rate while the support module rotates at a second speed equal to or less than the first speed, and the second bowl is positioned to correspond to the substrate, and the second liquid supply module does not supply the second liquid or supplies the second liquid at a second flow rate less than the first flow rate while the support module rotates at a third speed less than the second speed, after the second liquid supply module does not supply the second liquid or supplies the second liquid at the second flow rate in a state in which the first bowl is positioned to correspond to the substrate, the first liquid supply module supplies the first liquid while the support module rotates at a fourth speed greater than the second speed.

7. The substrate processing apparatus according to claim 6, wherein ​ In a state where the first bowl is positioned to correspond to the substrate, while the support module is rotated at a fifth speed smaller than the fourth speed, the drying module supplies a drying liquid onto the substrate, and next, while the support module is rotated at a sixth speed larger than the fourth speed, the drying module supplies a drying gas onto the substrate.

8. The substrate processing apparatus according to claim 1, 5, or 6, wherein between the process in which the first liquid supply module supplies the first liquid and the process in which the second liquid supply module supplies the second liquid at the first flow rate, while the first liquid supply module supplies the first liquid, the housing moves the second bowl to a position corresponding to the substrate.

9. The substrate processing apparatus according to claim 1, 5, or 6, wherein when the first bowl is positioned to correspond to the substrate, the wind speed near the edge of the substrate is a first wind speed, and when the second bowl is positioned to correspond to the substrate, the wind speed near the edge of the substrate is a second wind speed, and the second wind speed is smaller than the first wind speed.

10. The substrate processing apparatus according to claim 1, 5, or 6, wherein the first liquid is a rinsing liquid, and the second liquid is an etching liquid.

11. A substrate processing apparatus comprising: a support module for placing a substrate, and capable of being rotated; a housing capable of changing height with respect to the support module, surrounding the periphery of the support module, and including a first bowl and a second bowl disposed inside the first bowl; a first liquid supply module for spouting a first liquid toward the substrate; and a second liquid supply module for spouting a second liquid different from the first liquid toward the substrate, wherein the first bowl is positioned to correspond to the substrate, that is, so that a virtual plane extending the main surface of the substrate reaches the flow inlet of the first bowl, and while the support module is rotated at a first speed, the first liquid supply module supplies the first liquid, while the housing moves the second bowl to a position corresponding to the substrate, the support module is rotated at a second speed smaller than the first speed, and the first liquid supply module supplies the first liquid, the second bowl is positioned to correspond to the substrate, that is, so that the virtual plane extending the main surface of the substrate reaches the flow inlet of the second bowl, and while the support module is rotated at the second speed, the second liquid supply module supplies the second liquid at a first flow rate, the second bowl is positioned to correspond to the substrate, and while the support module is rotated at a third speed smaller than the second speed, the second liquid supply module interrupts the supply of the second liquid, while the housing moves the first bowl to a position corresponding to the substrate, the support module is rotated at a fourth speed larger than the first speed, and the second liquid supply module supplies the second liquid at a second flow rate larger than the first flow rate, and the second bowl is positioned to correspond to the substrate, and while the support module is rotated at a third speed smaller than the second speed, the second liquid supply module interrupts the supply of the second liquid, the housing moves the first bowl to a position corresponding to the substrate, the support module is rotated at a fourth speed larger than the first speed, and the second liquid supply module supplies the second liquid at a second flow rate larger than the first flow rate, and the second bowl is positioned to correspond to the substrate, and while the support module is rotated at a third speed smaller than the second speed, the second liquid supply module interrupts the supply of the second liquid. The first bowl is positioned to correspond to the substrate, and the first chemical liquid supply module supplies the first chemical liquid while the support module is rotating at the fourth speed.

12. The substrate processing apparatus according to claim 11, wherein The second chemical liquid supply module supplies the second chemical liquid at the first flow rate for a first time, and a state in which the second chemical liquid supply module interrupts the supply of the second chemical liquid continues for a second time which is longer than the first time, and the second chemical liquid supply module supplies the second chemical liquid at the second flow rate for a third time which is longer than the first time and shorter than the second time.

13. The substrate processing apparatus according to claim 11, wherein After the first chemical liquid supply module supplies the first chemical liquid while the support module is rotating at the fourth speed, the first bowl is positioned to correspond to the substrate, and a drying module supplies a drying liquid onto the substrate while the support module is rotating at a fifth speed which is smaller than the fourth speed, and then the drying module supplies a drying gas onto the substrate while the support module is rotating at a sixth speed which is larger than the fourth speed.

14. A substrate processing method comprising the steps of: providing a substrate processing apparatus including: a support module for placing a substrate, and capable of rotating; a housing capable of changing height with respect to the support module, surrounding a periphery of the support module, and including a first bowl and a second bowl arranged inside the first bowl; a first chemical liquid supply module for ejecting a first chemical liquid toward the substrate; and a second chemical liquid supply module for ejecting a second chemical liquid different from the first chemical liquid toward the substrate; the first bowl is positioned to correspond to the substrate, i.e., so that a virtual plane extending a main surface of the substrate reaches a flow inlet of the first bowl, and the first chemical liquid supply module supplies the first chemical liquid while the support module is rotating at a first speed; the second bowl is positioned to correspond to the substrate, i.e., so that the virtual plane extending the main surface of the substrate reaches a flow inlet of the second bowl, and the second chemical liquid supply module supplies the second chemical liquid at a first flow rate while the support module is rotating at a second speed which is equal to or smaller than the first speed; and the second bowl is positioned to correspond to the substrate, and the second chemical liquid supply module does not supply the second chemical liquid or supplies the second chemical liquid at a second flow rate which is smaller than the first flow rate while the support module is rotating at a third speed which is smaller than the second speed, the substrate processing method further includes the steps of: the second chemical liquid supply module supplies the second chemical liquid at a third flow rate which is larger than the first flow rate while the support module is rotating at a fourth speed which is larger than the second speed.

15. The substrate processing method according to claim 14, further comprising the steps of: The housing moves the first bowl to a position corresponding to the substrate during the second liquid supply module supplies the second liquid at the third flow rate.

16. The substrate processing method according to claim 15, comprising the steps of: After the second liquid supply module supplies the second liquid at the third flow rate, the first liquid supply module supplies the first liquid while the support module rotates at the fourth speed in a state where the first bowl is positioned to correspond to the substrate.

17. A substrate processing method, comprising the steps of: Providing a substrate processing apparatus including: a support module for placing a substrate and capable of rotating; a housing capable of changing height with respect to the support module, surrounding a periphery of the support module, and including a first bowl and a second bowl disposed inside the first bowl; a first liquid supply module for ejecting a first liquid toward the substrate; and a second liquid supply module for ejecting a second liquid different from the first liquid toward the substrate; the first bowl is positioned to correspond to the substrate, i.e., such that a virtual plane extending a major surface of the substrate reaches a flow inlet of the first bowl, and the first liquid supply module supplies the first liquid while the support module rotates at a first speed; the second bowl is positioned to correspond to the substrate, i.e., such that the virtual plane extending the major surface of the substrate reaches a flow inlet of the second bowl, and the second liquid supply module supplies the second liquid at a first flow rate while the support module rotates at a second speed equal to or smaller than the first speed; and the second bowl is positioned to correspond to the substrate, and the second liquid supply module does not supply the second liquid or supplies the second liquid at a second flow rate smaller than the first flow rate while the support module rotates at a third speed smaller than the second speed, the substrate processing method further comprising the steps of: After the second liquid supply module does not supply the second liquid or supplies the second liquid at the second flow rate in a state where the first bowl is positioned to correspond to the substrate, the first liquid supply module supplies the first liquid while the support module rotates at a fourth speed greater than the second speed.

Images