Ion implantation device and adjustment method

Abstract

The present invention provides an ion implantation device and an adjustment method. The device comprises an ion beam generating component, an ion beam separating component, an ion beam converging component, an ion beam diffusion component, a converging adjustment component, a diffusion adjustment component and an adjustment control component. The ion beam filtering component cooperates with the ion beam generating component to separate the ion beam generated by the ion beam generating component. The ion beam converging component cooperates with the ion beam separating component to respectively converge the separated ion beams. The ion beam diffusion component cooperates with the ion beam converging component to diffuse the converged ion beam. The converging adjustment component cooperates with the ion beam converging component to adjust the operating state of the ion beam converging component. The diffusion adjustment component cooperates with the ion beam diffusion component to adjust the operating state of the ion beam diffusion component. The adjustment control component cooperates with the converging adjustment component and the diffusion adjustment component to control the adjustment process of the converging adjustment component and the diffusion adjustment component.

Description

Technical Field

[0001] The present invention relates to ion implantation equipment, and in particular to an ion implantation device and method. Background Art

[0002] Glass substrates or semiconductor substrates used in flat-panel display devices of organic LEDs are usually doped by ion implantation. For large substrates, if a conventional narrow beam width ion implanter is used for implantation, multiple round-trip injections are required, and the required injection time is extremely long, which is not conducive to industrialization. However, a wide-beam ion implanter, that is, the width of the irradiated ion beam is greater than the width of the substrate, can complete the ion implantation with a single scan. However, this requires that the ion beam has a highly uniform current density distribution under a large bandwidth. Currently, most methods of directly modulating the wide-band ion beam are used. Although this method is simple, the control effect is poor, and it is difficult to achieve a wide ion band beam with high uniformity. Therefore, it is necessary to optimize the structure of this ion implantation device to overcome the above-mentioned defects. Summary of the invention

[0003] The object of the present invention is to provide an ion implantation device and method, so as to adjust the current density distribution of the ion beam.

[0004] The technical solution adopted by the present invention to solve the technical problem is:

[0005] An ion implantation device, comprising:

[0006] An ion beam generating assembly, which generates a ribbon ion beam;

[0007] An ion beam separation component, which cooperates with the ion beam generating component to separate the ion beam generated by the ion beam generating component to form a plurality of mutually separated ion beams;

[0008] An ion beam converging component, which cooperates with the ion beam separating component to converge the separated ion beams respectively;

[0009] An ion beam diffusion component cooperates with an ion beam convergence component, and the ion beam adjustment component diffuses the converged ion beams so that adjacent ion beams overlap each other;

[0010] A convergence adjustment component, which cooperates with the ion beam convergence component and is used to adjust the operating state of the ion beam convergence component;

[0011] A diffusion regulating component, which cooperates with the ion beam diffusion component and is used to regulate the operating state of the ion beam diffusion component;

[0012] The regulating control component cooperates with the converging regulating component and the diffusing regulating component, and the regulating control component controls the regulating process of the converging regulating component and the diffusing regulating component.

[0013] The ion beam generating assembly is composed of a single ion source or multiple ion sources;

[0014] When the ion beam generating assembly is composed of a plurality of ion sources, the ion sources are arranged sequentially along the width direction of the ion beam.

[0015] The ion beam separation components include:

[0016] A group of separation slits are provided, each of which corresponds to the position of the ion source and is arranged sequentially along the width direction of the ion beam. The ion beam passes through the separation slits to form mutually separated ion beams. The function of the separation slits is to filter out ions with too large a difference in incident direction, and to ensure that the speed direction of the ions coming out of each separation slit is not much different.

[0017] The ion beam focusing assembly includes:

[0018] A spiral coil, wherein a group of spiral coils are provided and correspond to the position of the ion beam separation component, each spiral coil extends along the direction of movement of the ion beam and is arranged in sequence along its width direction, and the separated ion beams are respectively converged by the spiral coils. In one embodiment of the present invention, each spiral coil is respectively placed at the exit of the separation slit to ensure that the ion beam coming out of the separation slit can immediately enter the spiral coil, and the incident direction does not change much. After the spiral coil is energized, a uniform magnetic field is generated, and the ion beam spirals forward under the action of the uniform magnetic field, and finally converges at the exit end of the spiral coil;

[0019] The length of the spiral coil is less than an integral multiple of the length of the ion beam that converges once, so that the convergence point of the ion beam is located outside the outlet end of the spiral coil.

[0020] Ion beam diffuser components include:

[0021] A diffusion lens, wherein a group of diffusion lenses are provided and correspond to the position of the ion beam focusing assembly, and the diffusion lenses diffuse the converged ion beams respectively. In one embodiment of the present invention, each diffusion lens is respectively located outside the outlet end of the spiral coil and corresponds to the convergence point of the ion beam;

[0022] The diffusion lens includes:

[0023] A diffusion slit, which is composed of a non-magnetic member with an elongated hole and corresponds to the position of the convergence point of the ion beam, and only allows ions of a specific mass and charge to pass through;

[0024] a diffusion yoke mounted on the diffusion slit;

[0025] The diffusion electromagnet is installed on the diffusion slit and corresponds to the position of the diffusion yoke. Each diffusion electromagnet is independently connected to an adjustable diffusion power supply. The diffusion magnet adjusts the bending angle of the ion beam and then adjusts the current density distribution of the ion beam.

[0026] Convergence and regulation components include:

[0027] An adjusting motor is provided, wherein each adjusting motor is installed on a guide bracket and cooperates with the spiral coil. The adjusting motor drives the spiral coil to move, and adjusts the distance between the spiral coil and the ion beam separation component.

[0028] A motor controller, which is electrically connected to each regulating motor and can control the operating state of the regulating motor;

[0029] A convergence power supply is provided with a group of adjustable power supplies, each of which is electrically connected to the spiral coil to supply power to the spiral coil, thereby adjusting the operating state of the spiral coil and further adjusting the convergence state of the ion beam.

[0030] The diffusion regulation components include:

[0031] A diffusion power supply is provided with a group of adjustable power supplies, each of which is electrically connected to a diffusion electromagnet to supply power to the diffusion electromagnet, thereby adjusting the operating state of the diffusion electromagnet and further adjusting the diffusion state of the ion beam.

[0032] The regulating control components include:

[0033] Faraday cups, each Faraday cup corresponds to the position of the ion beam diffusion component and is arranged in sequence along the width direction of the ion beam, and each Faraday cup detects the current density distribution of the ion beam;

[0034] A measuring module, which is electrically connected to each Faraday cup through the input and output module, and the measuring module calculates the current density data detected by each Faraday cup to obtain total current density distribution data;

[0035] The central processing module and the storage module are electrically connected to the measuring module and the storage module, and compare the current density distribution data preset in the storage module with the current density distribution data obtained by the measuring module. The central processing module is also electrically connected to the motor controller, the convergent power supply and the diffused power supply through the input and output module to control the operating status of the motor controller, the convergent power supply and the diffused power supply.

[0036] An ion implantation adjustment method, using the above-mentioned ion implantation device, comprises:

[0037] The current density distribution obtained by the measuring module increases suddenly in a certain area, and the total value of the overall current density increases, but the overall current density distribution profile of this area remains consistent with that of other areas. At this time, the central processing module sends an adjustment signal to the diffusion power supply at the corresponding position of the sudden increase area to reduce its voltage, so that the current density in the sudden increase area is reduced. The Faraday cup detects the current density distribution of the ion beam again, and the measuring module calculates the current density data detected by each Faraday cup to obtain the total current density distribution data. The central processing module adjusts the diffusion power supply again according to the current density distribution data, and repeats this for multiple times, so that the measured current density distribution is consistent with the current density distribution data preset in the storage module;

[0038] The current density distribution obtained by the measuring module suddenly drops in a certain area. At this time, the central processing module sends an adjustment signal to the convergence power supply at the corresponding position of the sudden drop area, so that the voltage of the spiral coil at the position changes, so that the convergence point of the ion beam at the outlet end of the spiral coil moves toward the diffusion lens, so that the current density in the sudden drop area increases. The Faraday cup detects the current density distribution of the ion beam again, and the measuring module calculates the current density data detected by each Faraday cup to obtain the total current density distribution data. The central processing module adjusts the convergence power supply again according to the current density distribution data, and repeats this for multiple times, so that the measured current density distribution is consistent with the current density distribution data preset in the storage module;

[0039] The current density distribution obtained by the measuring module increases suddenly in a certain area and decreases suddenly in an adjacent area. At this time, the central processing module sends an adjustment signal to the motor controller to operate the adjustment motor at the corresponding position, drive the corresponding spiral coil to move, and change the current density in the sudden increase area and the sudden decrease area. The Faraday cup detects the current density distribution of the ion beam again, and the measuring module calculates the current density data detected by each Faraday cup to obtain the total current density distribution data. The central processing module controls the adjustment motor through the motor controller again according to the current density distribution data to move the spiral coil. This is repeated many times so that the measured current density distribution is consistent with the current density distribution data preset in the storage module.

[0040] The advantages of the present invention are:

[0041] The ion implantation device uses a separation slit to separate the ribbon ion beam into independent ion beams, filters out ions with too large a difference in the incident direction, and uses a spiral coil to converge the separated ion beams, and uses a diffusion lens to diffuse the converged ion beams. The formed ribbon ion beam is implanted into the substrate, and a Faraday cup is used to detect the current density distribution of the ion beam. A controller is used to adjust the operating state of the ion beam convergence component and the ion beam adjustment component according to the current density distribution of the ion beam. Through the above operations, the broadband ion beam can be separated into multiple nearly point-distributed ions. area, and then modulate the ion beam in each small area, and finally aggregate the modulated parts of the ion beam to form a broadband ion beam with high uniformity of current distribution. At the same time, the central processing module is electrically connected to the measuring module and the storage module, and the current density distribution data preset in the storage module is compared with the current density distribution data obtained by the measuring module. The central processing module is also electrically connected to the motor controller, the convergence power supply and the diffusion power supply through the input and output module to control the operating status of the motor controller, the convergence power supply and the diffusion power supply, which is beneficial to reduce the modulation difficulty of the broadband ion beam and improve the ion implantation accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] Figure 1 It is a structural schematic diagram of the ion implantation device proposed by the present invention;

[0043] Figure 2 is a schematic diagram of the structure of a diffusion lens;

[0044] Figure 3 It is one of the ion injection adjustment states. The solid line in the figure is the current density data detected by each Faraday cup, and the dotted line is the current density data obtained by the measurement module;

[0045] Figure 4 It is the second ion implantation adjustment state;

[0046] Figure 5 It is the third ion implantation adjustment state. DETAILED DESCRIPTION

[0047] In order to make the purpose, technical scheme and advantages of the embodiments of the present invention clearer, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. The components of the embodiments of the present invention generally described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present invention provided in the drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work belong to the scope of protection of the present invention.

[0048] like Figure 1 As shown, the ion implantation device proposed by the present invention includes an ion beam generating component, an ion beam separation component, an ion beam converging component, an ion beam diffusion component, a converging adjustment component, a diffusion adjustment component and an adjustment control component. The ion beam generating component generates a ribbon ion beam. The ion beam separation component cooperates with the ion beam generating component, and the ion beam separation component separates the ion beam generated by the ion beam generating component to form a plurality of mutually separated ion beams. The ion beam converging component cooperates with the ion beam separation component, and the ion beam converging component converges the separated ion beams respectively. The ion beam diffusion component cooperates with the ion beam converging component, and the ion beam adjustment component diffuses the converged ion beam to make adjacent ion beams overlap each other. The converging adjustment component cooperates with the ion beam converging component, and the converging adjustment component adjusts the operating state of the ion beam converging component. The diffusion adjustment component cooperates with the ion beam diffusion component, and the diffusion adjustment component adjusts the operating state of the ion beam diffusion component. The adjustment control component cooperates with the converging adjustment component and the diffusion adjustment component, and the adjustment control component controls the adjustment process of the converging adjustment component and the diffusion adjustment component.

[0049] The ion beam generating assembly is composed of a single ion source or a plurality of ion sources. In the present embodiment, the ion beam generating assembly is composed of a plurality of ion sources 100, and the ion sources are arranged in sequence along the width direction of the ion beam.

[0050] The ion beam separation assembly includes a separation slit 200, and a group of separation slits are provided. Each separation slit corresponds to the position of the ion source and is arranged sequentially along the width direction of the ion beam. The ion beam passes through the separation slits to form mutually separated ion beams. The function of the separation slits is to filter out ions with too large a difference in incident direction, and to ensure that the speed direction of the ions coming out of each separation slit is not much different.

[0051] The ion beam convergence component includes a spiral coil 300, and a group of spiral coils are provided, and the spiral coils correspond to the position of the ion beam separation component. The spiral coils extend along the movement direction of the ion beam and are arranged in sequence along the width direction. The separated ion beams are converged by the spiral coils. In this embodiment, the spiral coils are placed at the exit of the separation slit to ensure that the ion beam coming out of the separation slit can immediately enter the spiral coil and the incident direction does not change much. After the spiral coil is energized, a uniform magnetic field is generated. The ion beam spirals forward under the action of the uniform magnetic field and finally converges at the exit end of the spiral coil. The length of the spiral coil is less than an integer multiple of the length of the ion beam that converges once, so that the convergence point of the ion beam is located outside the exit end of the spiral coil.

[0052] The ion beam diffusion assembly includes a diffusion lens 400, and a group of diffusion lenses are provided, and the diffusion lenses correspond to the positions of the ion beam convergence assembly, and the converged ion beams are diffused by the diffusion lenses. In one embodiment of the present invention, each diffusion lens is located outside the outlet end of the spiral coil, and corresponds to the convergence point of the ion beam.

[0053] Specifically, Figure 2 The diffusion lens includes a diffusion slit 410, a diffusion yoke 420 and a diffusion electromagnet 430. The diffusion slit is composed of a non-magnetic component with an elongated hole and corresponds to the convergence point of the ion beam, so that only ions of specific mass and charge can pass through. The diffusion yoke is installed on the diffusion slit, and the diffusion electromagnet is installed on the diffusion slit and corresponds to the position of the diffusion yoke. Each diffusion electromagnet is independently connected to an adjustable diffusion power supply, and the diffusion magnet adjusts the bending angle of the ion beam, thereby adjusting the current density distribution of the ion beam.

[0054] The convergence adjustment component includes an adjustment motor 510, a motor controller 520 and a convergence power supply 530. A group of adjustment motors are provided. Each adjustment motor is respectively installed on a guide bracket and cooperates with the spiral coil. The spiral coil is driven by the adjustment motor to move to adjust the distance between the spiral coil and the ion beam separation component. The motor controller is electrically connected to each adjustment motor and can control the operating state of the adjustment motor. A group of convergence power supplies are provided, which are respectively adjustable power supplies. Each convergence power supply is respectively electrically connected to the spiral coil to supply power to the spiral coil to adjust the operating state of the spiral coil, thereby adjusting the convergence state of the ion beam.

[0055] The diffusion adjustment component includes a diffusion power supply 600, which is provided with a group of adjustable power supplies. Each diffusion power supply is electrically connected to the diffusion electromagnet, supplies power to the diffusion electromagnet, adjusts the operating state of the diffusion electromagnet, and further adjusts the diffusion state of the ion beam.

[0056] The regulating and controlling assembly includes a Faraday cup 710, a measuring module 720, a central processing module 730 and a storage module 740. Each Faraday cup corresponds to the position of the ion beam diffusion assembly and is arranged in sequence along the width direction of the ion beam. Each Faraday cup detects the current density distribution of the ion beam. The measuring module is electrically connected to each Faraday cup through the input and output module. The measuring module calculates the current density data detected by each Faraday cup to obtain the total current density distribution data. The central processing module is electrically connected to the measuring module and the storage module, and compares the current density distribution data preset in the storage module with the current density distribution data obtained by the measuring module. The central processing module is also electrically connected to the motor controller, the convergence power supply and the diffusion power supply through the input and output module to control the operating status of the motor controller, the convergence power supply and the diffusion power supply.

[0057] The ion implantation adjustment method proposed by the present invention is performed using the above-mentioned ion implantation device, comprising:

[0058] like Figure 3 , the current density distribution obtained by the measuring module increases suddenly in a certain area, and the total value of the overall current density increases, but the overall current density distribution profile of this area remains consistent with other areas. At this time, the central processing module sends an adjustment signal to the diffusion power supply at the corresponding position of the sudden increase area to reduce its voltage, so that the current density in the sudden increase area is reduced. The Faraday cup detects the current density distribution of the ion beam again, and the measuring module calculates the current density data detected by each Faraday cup to obtain the total current density distribution data. The central processing module adjusts the diffusion power supply again according to the current density distribution data, and repeats this for multiple times, so that the measured current density distribution is consistent with the current density distribution data preset in the storage module;

[0059] like Figure 4 , the current density distribution obtained by the measuring module suddenly drops in a certain area. At this time, the central processing module sends an adjustment signal to the convergence power supply at the corresponding position of the sudden drop area, so that the voltage of the spiral coil at the position changes, so that the convergence point of the ion beam at the outlet end of the spiral coil moves toward the diffusion lens, so that the current density in the sudden drop area increases, and the Faraday cup detects the current density distribution of the ion beam again, and the measuring module calculates the current density data detected by each Faraday cup to obtain the total current density distribution data. The central processing module adjusts the convergence power supply again according to the current density distribution data, and repeats this for multiple times, so that the measured current density distribution is consistent with the current density distribution data preset in the storage module;

[0060] like Figure 5The current density distribution obtained by the measuring module increases suddenly in a certain area and decreases suddenly in an adjacent area. At this time, the central processing module sends an adjustment signal to the motor controller to operate the adjustment motor at the corresponding position, drive the corresponding spiral coil to move, and change the current density in the sudden increase area and the sudden decrease area. The Faraday cup detects the current density distribution of the ion beam again, and the measuring module calculates the current density data detected by each Faraday cup to obtain the total current density distribution data. The central processing module controls the adjustment motor through the motor controller again according to the current density distribution data to move the spiral coil. This is repeated many times so that the measured current density distribution is consistent with the current density distribution data preset in the storage module.

[0061] The ion implantation device uses a separation slit to separate the ribbon ion beam into independent ion beams, filters out ions with too large a difference in the incident direction, and uses a spiral coil to converge the separated ion beams, and uses a diffusion lens to diffuse the converged ion beams. The formed ribbon ion beam is implanted into the substrate, and a Faraday cup is used to detect the current density distribution of the ion beam. A controller is used to adjust the operating state of the ion beam convergence component and the ion beam adjustment component according to the current density distribution of the ion beam. Through the above operations, the broadband ion beam can be separated into multiple nearly point-distributed ions. area, and then modulate the ion beam in each small area, and finally aggregate the modulated parts of the ion beam to form a broadband ion beam with high uniformity of current distribution. At the same time, the central processing module is electrically connected to the measuring module and the storage module, and the current density distribution data preset in the storage module is compared with the current density distribution data obtained by the measuring module. The central processing module is also electrically connected to the motor controller, the convergence power supply and the diffusion power supply through the input and output module to control the operating status of the motor controller, the convergence power supply and the diffusion power supply, which is beneficial to reduce the modulation difficulty of the broadband ion beam and improve the ion implantation accuracy.

[0062] In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "left", "right" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the invention product is usually placed when in use, or the orientation or positional relationship commonly understood by those skilled in the art, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second" and the like are only used to distinguish the description, and cannot be understood as indicating or implying relative importance. In the description of the present invention, it should also be noted that, unless otherwise clearly specified and limited, the terms "set", "connection" and the like should be understood in a broad sense, for example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be a connection between the two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to the specific circumstances.

Claims

1. An ion implantation device, characterized in that: include: An ion beam generating assembly, which generates a ribbon ion beam; An ion beam separation component, which cooperates with the ion beam generating component to separate the ion beam generated by the ion beam generating component to form a plurality of mutually separated ion beams; An ion beam converging component, which cooperates with the ion beam separating component to converge the separated ion beams respectively; An ion beam diffusion component cooperates with an ion beam convergence component, and the ion beam adjustment component diffuses the converged ion beams so that adjacent ion beams overlap each other; A convergence adjustment component, which cooperates with the ion beam convergence component and is used to adjust the operating state of the ion beam convergence component; A diffusion regulating component, which cooperates with the ion beam diffusion component and is used to regulate the operating state of the ion beam diffusion component; A regulating control component, which cooperates with the converging regulating component and the diffusing regulating component, and the regulating control component controls the regulating process of the converging regulating component and the diffusing regulating component; Ion beam diffuser components include: A diffusion lens, wherein a group of diffusion lenses are provided and correspond to the position of the ion beam focusing assembly, each diffusion lens is located outside the outlet end of the spiral coil and corresponds to the position of the convergence point of the ion beam; The diffusion lens includes: A diffusion slit, which is composed of a non-magnetic component with an elongated hole and corresponds to the convergence point of the ion beam; a diffusion yoke mounted on the diffusion slit; The diffusion electromagnet is installed on the diffusion slit and corresponds to the position of the diffusion yoke.

2. An ion implantation device according to claim 1, characterized in that: The ion beam generating assembly is composed of a single ion source or multiple ion sources; When the ion beam generating assembly is composed of a plurality of ion sources, the ion sources are arranged sequentially along the width direction of the ion beam.

3. An ion implantation device according to claim 1, characterized in that: The ion beam separation components include: A group of separation slits is provided, each separation slit corresponds to an ion source position and is arranged in sequence along the width direction of the ion beam.

4. An ion implantation device according to claim 1, characterized in that: The ion beam focusing assembly includes: A spiral coil, wherein a group of spiral coils are provided and correspond to the position of the ion beam separation assembly, and each spiral coil extends along the moving direction of the ion beam and is arranged in sequence along the width direction thereof; The length of the spiral coil is less than an integral multiple of the length of the ion beam that converges once.

5. An ion implantation device according to claim 4, characterized in that: Convergence and regulation components include: The regulating motor is provided in a group, each regulating motor is respectively mounted on the guide bracket and cooperates with the spiral coil; A motor controller, which is electrically connected to each regulating motor and can control the operating state of the regulating motor; The convergent power source is provided with a group of adjustable power sources, and each convergent power source is electrically connected to the spiral coil.

6. An ion implantation device according to claim 1, characterized in that: The diffusion regulation components include: A diffusion power supply is provided with a group of adjustable power supplies, each of which is electrically connected to a diffusion electromagnet.

7. An ion implantation device according to claim 5 or 6, characterized in that: The regulating control components include: Faraday cups, each Faraday cup corresponds to the position of the ion beam diffusion component and is arranged in sequence along the width direction of the ion beam, and each Faraday cup detects the current density distribution of the ion beam; A measuring module, which is electrically connected to each Faraday cup through the input and output module, and the measuring module calculates the current density data detected by each Faraday cup to obtain total current density distribution data; The central processing module and the storage module are electrically connected to the measuring module and the storage module, and compare the current density distribution data preset in the storage module with the current density distribution data obtained by the measuring module. The central processing module is also electrically connected to the motor controller, the convergent power supply and the diffused power supply through the input and output module to control the operating status of the motor controller, the convergent power supply and the diffused power supply.

8. An ion implantation adjustment method, performed using the ion implantation device according to claim 7, characterized in that: include: The current density distribution obtained by the measuring module increases suddenly in a certain area, and the total value of the overall current density increases, but the overall current density distribution profile of this area remains consistent with that of other areas. At this time, the central processing module sends an adjustment signal to the diffusion power supply at the corresponding position of the sudden increase area to reduce its voltage, so that the current density in the sudden increase area is reduced. The Faraday cup detects the current density distribution of the ion beam again, and the measuring module calculates the current density data detected by each Faraday cup to obtain the total current density distribution data. The central processing module adjusts the diffusion power supply again according to the current density distribution data, and repeats this for multiple times, so that the measured current density distribution is consistent with the current density distribution data preset in the storage module; The current density distribution obtained by the measuring module suddenly drops in a certain area. At this time, the central processing module sends an adjustment signal to the convergence power supply at the corresponding position of the sudden drop area, so that the voltage of the spiral coil at the position changes, so that the convergence point of the ion beam at the outlet end of the spiral coil moves toward the diffusion lens, so that the current density in the sudden drop area increases. The Faraday cup detects the current density distribution of the ion beam again, and the measuring module calculates the current density data detected by each Faraday cup to obtain the total current density distribution data. The central processing module adjusts the convergence power supply again according to the current density distribution data, and repeats this for multiple times, so that the measured current density distribution is consistent with the current density distribution data preset in the storage module; The current density distribution obtained by the measuring module increases suddenly in a certain area and decreases suddenly in an adjacent area. At this time, the central processing module sends an adjustment signal to the motor controller to operate the adjustment motor at the corresponding position, drive the corresponding spiral coil to move, and change the current density in the sudden increase area and the sudden decrease area. The Faraday cup detects the current density distribution of the ion beam again, and the measuring module calculates the current density data detected by each Faraday cup to obtain the total current density distribution data. The central processing module controls the adjustment motor through the motor controller again according to the current density distribution data to move the spiral coil. This is repeated many times so that the measured current density distribution is consistent with the current density distribution data preset in the storage module.

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