A high-side MOS intelligent driving circuit with current feedback composed of discrete devices
By designing a high-side MOS intelligent drive circuit with current feedback composed of discrete components, the problem of shortage of high-side MOS switch IC chips was solved. It realizes high-side switching function and output current feedback, has overcurrent and undervoltage protection, adapts to protection when the load is short-circuited, and allows for flexible parameter modification.
CN114710014BActive Publication Date: 2026-02-06PLASSEN (XIAMEN) MACHINERY & ELECTRONICS CO LTD
Patent Information
- Application Number
- CN202210470198.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-04-28
- Publication Date
- 2026-02-06
- Estimated Expiration
- 2042-04-28
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Figure CN114710014B_ABST
Abstract
The application relates to a discrete device composed high-side MOS intelligent driving circuit with current feedback, which comprises a MOS tube module U1, a first switch control module, a second switch control module, an under-voltage protection module, an over-current protection module, a current feedback module and a reference source module. The application can realize high-side switch function, has two-way input and output, has output current feedback function, linear output for CPU accurate calculation of actual load current, has over-current protection and under-voltage protection functions. When short circuit occurs in the load, automatic switching to ultra-low duty ratio PWM output can prevent MOS chip overheating. The application is built by discrete components, modification parameters and replacement of parts are flexible, and the application has strong practicability.
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Citation Information
Patent Citations
High-side MOS intelligent driving circuit with current feedback formed by discrete devices
CN217984849U