Substrate processing apparatus and substrate processing method

Abstract

An apparatus for processing a substrate, having: a chamber for housing a substrate; a heat source for heat processing the substrate; a heat ray sensing type sensor provided outside the chamber, receiving infrared rays radiated from the substrate; and an infrared ray transmitting window provided in the chamber, transmitting infrared rays having a wavelength of 8 μm or more and toward the heat ray sensing type sensor.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. Background Art

[0002] Patent Document 1 discloses a processing system comprising a COR processing apparatus for performing COR treatment on substrates and a PHT processing apparatus for performing PHT treatment on the substrates. The PHT processing apparatus includes a mounting table for placing two substrates horizontally, and a heater is provided on the mounting table. The heater heats the substrates after COR treatment, performing the PHT treatment to vaporize (sublime) the reaction products generated by the COR treatment.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent No. 5352103 Summary of the Invention

[0006] Problems to be solved by the invention

[0007] The technology according to the present disclosure appropriately measures the temperature of a substrate from outside the chamber in a non-contact manner while the substrate is housed in the chamber.

[0008] Solutions for solving problems

[0009] One embodiment of the present disclosure is an apparatus for processing a substrate, comprising: a chamber for accommodating the substrate; a heat source for heat-treating the substrate; a heat-sensitive sensor disposed outside the chamber and receiving infrared rays radiated from the substrate; and an infrared-transmitting window disposed in the chamber and transmitting infrared rays having a wavelength of 8 μm or greater.

[0010] Effects of the Invention

[0011] According to the present disclosure, the temperature of a substrate can be appropriately measured in a non-contact manner from outside the chamber while the substrate is housed in the chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a plan view schematically showing the structure of a wafer processing apparatus.

[0013] Figure 2 It is a longitudinal cross-sectional view schematically showing the structure of a PHT module.

[0014] Figure 3 It is an explanatory diagram showing how the PHT process is executed in the PHT module.

[0015] Figure 4It is a longitudinal sectional view schematically showing the structure of the temperature measuring unit.

[0016] Figure 5 It is a graph showing the relationship between the wavelength of light and the radiant energy.

[0017] Figure 6 This is a graph showing the relationship between the wavelength of light and the transmittance of silicon.

[0018] Figure 7 This graph shows the relationship between the wafer temperature and the thermopile output, as measured by the temperatures of the quartz window and thermopile.

[0019] Figure 8 This is a graph showing the relationship between the wafer temperature measured by a thermocouple and the wafer temperature calculated using a multivariate regression equation (calibration equation).

[0020] Figure 9 It is a plan view schematically showing the structure of an LED light source. DETAILED DESCRIPTION

[0021] In the manufacturing process of semiconductor devices, an oxide film formed on the surface of a semiconductor wafer (hereinafter sometimes referred to as a "wafer") is etched and removed. For example, as disclosed in Patent Document 1, the oxide film etching process is performed using a COR (Chemical Oxide Removal) process and a PHT (Post Heat Treatment) process.

[0022] The COR process is a process in which the oxide film formed on the wafer reacts with the process gas, causing it to deteriorate and generate reaction products. The PHT process is a heat treatment that vaporizes the reaction products generated during the COR process by heating them. The oxide film formed on the wafer is etched by performing these COR and PHT processes sequentially.

[0023] During the PHT process, the temperature of the wafer is measured to appropriately heat the wafer. In this process, the temperature of the mounting table heated by the heater is measured and estimated as the wafer temperature.

[0024] The heating temperature of the wafer during the PHT process is, for example, approximately 300°C. Meanwhile, in the conventional PHT processing apparatus described in Patent Document 1, the wafer is heated by a heater embedded in the mounting table, but the heating rate is, for example, approximately 0.45°C / second. Therefore, the wafer heating process takes time.

[0025] To shorten the heating time, the inventors of this invention came up with the idea of ​​using a fast-heating LED light source as a heat source. Specifically, the LED light emitted by the light source is irradiated onto the wafer to heat it, with a heating rate of, for example, 12°C / second. This shortens the heating process time.

[0026] However, because PHT processing is performed in a reduced-pressure atmosphere within the chamber housing the wafers, the LED light source must be located outside the chamber. In this case, even if the temperature of the LED light source, acting as a heat source, is measured as in the conventional method, it is impossible to estimate the wafer temperature from that LED light source. Measuring wafer temperature with an LED light source located outside the chamber was not previously envisioned. Therefore, conventional wafer temperature measurement methods leave room for improvement.

[0027] The technology disclosed herein appropriately measures the temperature of a substrate from outside a chamber in a non-contact manner while the substrate is housed therein. The wafer processing apparatus and wafer processing method according to this embodiment are described below with reference to the accompanying drawings. Elements having substantially the same functional structure are denoted by the same reference numerals throughout this specification and the accompanying drawings to omit repeated descriptions.

[0028] <Wafer processing equipment>

[0029] First, the structure of the wafer processing apparatus according to this embodiment will be described. Figure 1 This is a top view schematically illustrating the structure of a wafer processing apparatus 1 according to this embodiment. This embodiment describes a case where the wafer processing apparatus 1 includes various processing modules for performing COR processing, PHT processing, CST (Cooling Storage) processing, and orientation processing on silicon substrate wafers W. The module structure of the wafer processing apparatus 1 disclosed herein is not limited to this and can be arbitrarily selected.

[0030] like Figure 1 As shown, the wafer processing apparatus 1 has an integrated structure in which an atmospheric section 10 and a decompression section 11 are connected via load lock modules 20a and 20b. The atmospheric section 10 includes a plurality of atmospheric modules for performing desired processing on wafers W under an atmospheric pressure atmosphere. The decompression section 11 includes a plurality of decompression modules for performing desired processing on wafers W under a reduced pressure atmosphere.

[0031] The load lock module 20a temporarily holds wafers W so that the wafers W, transferred from the load lock module 30 (described later) of the atmospheric section 10, can be transferred to the transfer module 40 (described later) of the decompression section 11. The load lock module 20a includes an upper storage section 21a and a lower storage section 22a for vertically holding two wafers W.

[0032] The load-lock module 20a is connected to a load-lock module 30 described later via a gate 24a provided with a gate valve 23a. The load-lock module 20a is also connected to a transfer module 40 described later via a gate 26a provided with a gate valve 25a.

[0033] The load lock module 20a is connected to a gas supply unit (not shown) for supplying gas and an exhaust unit (not shown) for exhausting gas. The load lock module 20a is capable of switching its interior between an atmospheric pressure atmosphere and a reduced pressure atmosphere through the gas supply unit and the exhaust unit. Specifically, the load lock module 20a is configured to appropriately transfer wafers W between the atmospheric pressure atmosphere 10 and the reduced pressure atmosphere 11.

[0034] The load lock module 20b has the same structure as the load lock module 20a, that is, it includes an upper storage unit 21b and a lower storage unit 22b, a gate valve 23b and a gate 24b on the load lock module 30 side, and a gate valve 25b and a gate 26b on the transfer module 40 side.

[0035] In addition, the number and arrangement of the load-lock modules 20a and 20b are not limited to the present embodiment, and can be set arbitrarily.

[0036] The atmospheric section 10 includes: a load lock module 30 equipped with a wafer transfer mechanism (not shown); a load port 32 for loading a front-opening wafer transfer box 31 capable of storing multiple wafers W; a CST module 33 for cooling the wafers W; and an orientation module 34 for adjusting the horizontal orientation of the wafers W.

[0037] The load interlock module 30 is composed of a shell with a rectangular interior, and the interior of the shell is maintained at an atmospheric pressure atmosphere. A plurality of, for example, three loading ports 32 are arranged on one side of the long side of the shell of the load interlock module 30. Load interlock modules 20a and 20b are arranged on the other side of the long side of the shell of the load interlock module 30. A CST module 33 is provided on one side of the short side of the shell of the load interlock module 30. An orientation module 34 is provided on the other side of the short side of the shell of the load interlock module 30. In addition, the load interlock module 30 has a wafer conveying mechanism (not shown) that can move along its longitudinal direction inside the shell. The wafer conveying mechanism can convey wafers W between the front-opening wafer transfer box 31 placed on the load port 32 and the load interlock modules 20a and 20b. In addition, the structure of the wafer conveying mechanism is the same as that of the wafer conveying mechanism 50 described later.

[0038] Furthermore, the number and arrangement of the load ports 32 , the CST modules 33 , and the orientation modules 34 are not limited to those in this embodiment, and can be arbitrarily designed.

[0039] The front-opening pod 31 holds multiple wafers W, for example, 25 wafers W of a substrate set, in stacked layers at equal intervals. The interior of the front-opening pod 31 placed on the load port 32 is sealed by, for example, air or nitrogen.

[0040] The CST module 33 can store a plurality of wafers W, for example, a number greater than the number that can be stored in the front-opening pod 31 , in multiple layers at equal intervals, and perform cooling processing on the plurality of wafers W.

[0041] The orientation module 34 rotates the wafer W to adjust its horizontal orientation. Specifically, when processing multiple wafers W, the orientation module 34 adjusts each wafer W so that its horizontal orientation relative to a reference position (eg, notch position) is the same.

[0042] The decompression unit 11 includes a transfer module 40 for simultaneously transporting two wafers W, a COR module 41 for performing COR processing on the wafers W transferred from the transfer module 40, and a PHT module 42 for performing PHT processing. The interiors of the transfer module 40, the COR module 41, and the PHT module 42 are each maintained in a reduced pressure atmosphere. The transfer module 40 is provided with a plurality of, for example, three, COR modules 41 and PHT modules 42.

[0043] The transfer module 40 is composed of a rectangular housing and is connected to the load lock modules 20a and 20b via the gate valves 25a and 25b as described above. The transfer module 40 sequentially transfers the wafer W loaded into the load lock module 20a to a COR module 41 and a PHT module 42 for COR and PHT processing, respectively, before being unloaded to the atmosphere section 10 via the load lock module 20b.

[0044] Two stages 43, 43 are provided within the COR module 41 for placing two wafers W in a horizontal arrangement. The COR module 41 arranges the wafers W on the stages 43, 43, thereby simultaneously performing COR processing on the two wafers W. Furthermore, the COR module 41 is connected to a gas supply unit (not shown) for supplying process gases, purge gases, and the like, and an exhaust unit (not shown) for exhausting gases.

[0045] The COR module 41 is connected to the transport module 40 via a gate 45 provided with a gate valve 44. The gate valve 44 ensures airtightness between the transport module 40 and the COR module 41 and allows communication therewith.

[0046] The PHT module 42 includes two buffers 101a and 101b, described later, for placing two wafers W in a horizontal arrangement. The PHT module 42 places the wafers W in a horizontal arrangement on the buffers 101a and 101b, thereby performing PHT processing on the two wafers W simultaneously. The specific structure of the PHT module 42 will be described later.

[0047] The PHT module 42 is connected to the transport module 40 via a gate 47 provided with a gate valve 46. The gate valve 46 ensures airtightness between the transport module 40 and the PHT module 42 and enables communication therewith.

[0048] A wafer transfer mechanism 50 for transferring wafers W is provided within the transfer module 40. The wafer transfer mechanism 50 includes transfer arms 51a and 51b that move while holding two wafers W, a rotary table 52 that rotatably supports the transfer arms 51a and 51b, and a rotary mounting table 53 on which the rotary table 52 is mounted. Furthermore, guide rails 54 extending along the longitudinal direction of the transfer module 40 are provided within the transfer module 40. The rotary mounting table 53 is provided on the guide rails 54 and is configured to enable the wafer transfer mechanism 50 to move along the guide rails 54.

[0049] In the transfer module 40, the transfer arm 51a receives the two wafers W held in the upper storage unit 21a and the lower storage unit 22a in the load lock module 20a and transfers them to the COR module 41. Furthermore, the transfer arm 51a holds the two wafers W that have undergone COR processing and transfers them to the PHT module 42. Furthermore, the transfer arm 51b holds the two wafers W that have undergone PHT processing and transfers them out to the load lock module 20b.

[0050] The above wafer processing device 1 is provided with a control unit 60. The control unit 60 is, for example, a computer having a CPU, a memory, etc., and the control unit 60 has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the wafer W in the wafer processing device 1. In addition, the program storage unit also stores a program for controlling the operation of the drive system such as the various processing modules and the conveying mechanism mentioned above to realize the wafer processing described later in the wafer processing device 1. In addition, the above program can be a program recorded in a computer-readable storage medium H and installed from the storage medium H into the control unit 60.

[0051] <Operation of Wafer Processing Apparatus>

[0052] The wafer processing apparatus 1 according to the present embodiment is configured as described above. Next, wafer processing in the wafer processing apparatus 1 will be described.

[0053] First, the front-opening pod 31 housing a plurality of wafers W is placed on the load port 32 .

[0054] Next, the wafer transfer mechanism takes two wafers W out of the front-opening pod 31 and transfers them to the orientation module 34. In the orientation module 34, the orientation of the wafers W relative to a reference position (eg, notch position) in the horizontal direction is adjusted (orientation processing).

[0055] Next, the wafer transfer mechanism loads two wafers W into the load-lock module 20a. Once the two wafers W are loaded into the load-lock module 20a, the gate valve 23a is closed to seal the interior of the load-lock module 20a and reduce the pressure. Thereafter, the gate valve 25a is opened to connect the interior of the load-lock module 20a with the interior of the transfer module 40.

[0056] Next, when the load lock module 20a is connected to the transfer module 40, the two wafers W are held by the transfer arm 51a of the wafer transfer mechanism 50 and transferred from the load lock module 20a to the transfer module 40. Next, the wafer transfer mechanism 50 moves to the front of one COR module 41.

[0057] Next, the gate valve 44 is opened, and the transfer arm 51a holding two wafers W enters the COR module 41. The transfer arm 51a then places one wafer W on each stage 43. Thereafter, the transfer arm 51a exits the COR module 41.

[0058] Next, when the transfer arm 51a exits the COR module 41, the gate valve 44 is closed, and the two wafers W undergo COR processing in the COR module 41. During COR processing, a processing gas is supplied to the surface of the oxide film, causing the oxide film and the processing gas to chemically react, causing the oxide film to deteriorate and produce a reaction product. For example, hydrogen fluoride gas and ammonia gas are used as the processing gas, producing ammonium fluorosilicate (AFS) as the reaction product.

[0059] Next, when the COR processing in the COR module 41 is completed, the gate valve 44 is opened, and the transfer arm 51a enters the COR module 41. Then, two wafers W are transferred from the stages 43, 43 to the transfer arm 51a, and the transfer arm 51a holds the two wafers W. Thereafter, the transfer arm 51a exits the COR module 41, and the gate valve 44 is closed.

[0060] Next, the wafer transfer mechanism 50 moves to the front of the PHT module 42. Next, the gate valve 46 is opened, and the transfer arm 51a, holding two wafers W, enters the PHT module 42. The transfer arm 51a then places one wafer W onto each of the buffers 101a and 101b. The transfer arm 51a then exits the PHT module 42. Next, the gate valve 46 is closed, and the two wafers W undergo PHT processing. The details of this PHT processing will be described later.

[0061] Next, when the PHT process of the wafer W ends, the gate valve 46 is opened, and the transfer arm 51b enters the PHT module 42. Further, two wafers W are transferred from the buffer units 101a and 101b to the transfer arm 51b, and the two wafers W are held by the transfer arm 51b. After that, the transfer arm 51b exits the PHT module 42, and the gate valve 46 is closed.

[0062] Next, the gate valve 25b is opened, and two wafers W are transferred into the load lock module 20b by the wafer transfer mechanism 50. When the wafers W are transferred into the load lock module 20b, the gate valve 25b is closed to seal the inside of the load lock module 20b, and it is opened to the atmosphere.

[0063] Next, two wafers W are transferred to the CST module 33 by the wafer transfer mechanism. In the CST module 33, the wafers W are subjected to CST processing to cool the wafers W.

[0064] Next, two wafers W are returned to the front-opening type cassette 31 by the wafer transfer mechanism and stored therein. By doing so, a series of wafer processes in the wafer processing apparatus 1 end.

[0065] <PHT Module>

[0066] Next, the structure of the PHT module 42, which is a substrate processing apparatus, will be described. Figure 2 It is a longitudinal sectional view showing an outline of the structure of the PHT module 42. Further, in the PHT module 42 of the present embodiment, two wafers W are processed.

[0067] The PHT module 42 includes a chamber 100 formed airtightly; two buffer units 101a and 101b that hold the wafers W inside the chamber 100; two elevating mechanisms 102a and 102b that elevate each of the buffer units 101a and 101b; a gas supply unit 103 that supplies gas to the inside of the chamber 100; a heating unit 104 that heats the wafers W held by the buffer units 101a and 101b; an exhaust unit 105 that discharges the gas inside the chamber 100; and temperature measuring units 106a and 106b that measure the temperatures of the wafers W held by the buffer units 101a and 101b.

[0068] The chamber 100 is a container, for example, a generally rectangular parallelepiped container, formed from a metal such as aluminum or stainless steel. The chamber 100 includes a cylindrical sidewall 110, for example, a generally rectangular shape when viewed from above, with openings on its upper and lower surfaces; a top plate 111 that airtightly covers the upper surface of the sidewall 110; and a bottom plate 112 that covers the lower surface of the sidewall 110. A sealing member 113 is provided between the upper end surface of the sidewall 110 and the top plate 111 to maintain an airtight interior of the chamber 100. Furthermore, heaters (not shown) are provided on each of the sidewall 110, top plate 111, and bottom plate 112. The heaters heat the sidewall 110, top plate 111, and bottom plate 112 to, for example, 100°C or higher, thereby suppressing the adhesion of deposits such as sublimated AFS.

[0069] The base plate 112 has an opening in a portion, and quartz windows 114a and 114b serving as LED transmission windows are embedded in the opening. The quartz windows 114a and 114b are disposed between the buffer portions 101a and 101b and the LED light sources 150a and 150b (described later) and are configured to transmit LED light from the LED light sources 150a and 150b. The material of the quartz windows 114a and 114b is not particularly limited as long as it transmits LED light; for example, quartz can be used. Furthermore, as described later, the LED light sources 150a and 150b are disposed corresponding to the two buffer portions 101a and 101b, and two quartz windows 114a and 114b are provided corresponding to the two LED light sources 150a and 150b.

[0070] Heater plates 115a and 115b, each containing a built-in heater (not shown), are provided on the lower surfaces of the quartz windows 114a and 114b. The heater plates 115a and 115b are configured to transmit LED light from the LED light sources 150a and 150b. The material of the heater plates 115a and 115b is not particularly limited, as long as it transmits LED light. For example, a heater made of transparent quartz with a heating wire or conductive material attached can be used. Furthermore, by heating the quartz windows 114a and 114b to a temperature of, for example, 100°C or higher using the heater plates 115a and 115b, the formation of deposits (deposits) on the quartz windows 114a and 114b can be suppressed, thereby preventing the quartz windows 114a and 114b from becoming cloudy.

[0071] Furthermore, thermocouples (not shown) are provided on the quartz windows 114 a and 114 b , and the temperatures of the quartz windows 114 a and 114 b are measured by the thermocouples.

[0072] The quartz windows 114a and 114b are supported by a support member 116 provided on the upper surface of the bottom plate 112. A sealing member 117 is provided between the bottom plate 112 and the quartz windows 114a and 114b (heating plates 115a and 115b) to keep the interior of the chamber 100 airtight.

[0073] Two buffer parts 101a and 101b are provided inside the chamber 100, and each buffer part 101a and 101b holds a wafer W. The buffer parts 101a and 101b each have an arm member 120 that is roughly C-shaped when viewed from above. The arm member 120 is bent along the peripheral portion of the wafer W with a radius of curvature larger than the diameter of the wafer W. Holding members 121 are provided at multiple locations, for example, three locations, of the arm member 120, and the holding members 121 protrude inward from the arm member 120 and hold the outer peripheral portion of the back side of the wafer W. Each holding member 121 is configured to allow LED light from the LED light sources 150a and 150b to pass through. The material of the holding member 121 is not particularly limited as long as it is a material that allows LED light to pass through, but for example, quartz can be used. Furthermore, as described in Patent Document 1, for example, when a wafer W is placed on an aluminum mounting table, aluminum components are transferred to the back surface of the wafer W, potentially causing metal contamination of the back surface of the wafer W. Regarding this point, in the present embodiment, the outer periphery of the back surface of the wafer W is maintained, thereby suppressing metal contamination.

[0074] Each of the three holding members 121 is provided with a support pin 122 for supporting the wafer W. The support pins 122 are configured to transmit LED light from the LED light sources 150a and 150b. The material of the support pins 122 is not particularly limited as long as it transmits LED light, but quartz can be used, for example.

[0075] There are two lifting mechanisms 102a and 102b, each of which raises and lowers the buffers 101a and 101b. The lifting mechanisms 102a and 102b each include a buffer drive 130, which is located outside the chamber 100; and a drive shaft 131, which supports the arm member 120 of the buffers 101a and 101b, is connected to the buffer drive 130, passes through the bottom plate 112 of the chamber 100, and extends vertically upward inside the chamber 100. The buffer drive 130 uses, for example, an actuator driven by a motor driver (not shown). Furthermore, the lifting mechanisms 102a and 102b raise and lower the drive shaft 131 through the buffer drive 130, thereby enabling the buffers 101a and 101b to be arranged at any height. As a result, the position where the heating treatment of the wafer W is performed and the position where the cooling treatment is performed can be appropriately adjusted as described later.

[0076] The gas supply unit 103 supplies gas (cooling gas and purge gas) to the interior of the chamber 100. The gas supply unit 103 includes shower heads 140a and 140b that distribute and supply gas to the interior of the chamber 100. Two shower heads 140a and 140b are provided on the lower surface of the top plate 111 of the chamber 100, corresponding to the buffer parts 101a and 101b. The shower heads 140a and 140b each include: a substantially cylindrical frame 141 having an opening, for example, on the lower surface thereof, the frame 141 being supported on the lower surface of the top plate 111; and a substantially circular shower plate 142 embedded in the inner surface of the frame 141. The shower plate 142 is provided at a predetermined distance from the top of the frame 141. As a result, a space 143 is formed between the top of the frame 141 and the upper surface of the shower plate 142. Furthermore, the shower plate 142 is provided with a plurality of openings 144 that penetrate the shower plate 142 in the thickness direction.

[0077] A gas supply source 146 is connected to a space 143 between the top of the frame 141 and the shower plate 142 via a gas supply pipe 145. Gas supply source 146 is configured to supply cooling gas or purge gas, such as N2 gas or Ar gas. Thus, the gas supplied from gas supply source 146 is supplied via space 143 and shower plate 142 to wafers W held in buffer sections 101a and 101b. Furthermore, a flow control mechanism 147 for adjusting the amount of gas supplied is provided on gas supply pipe 145. This flow control mechanism 147 is configured to individually control the amount of gas supplied to each wafer W.

[0078] The heating unit 104 heats the wafer W held in the buffer units 101a and 101b. The heating unit 104 includes two LED light sources 150a and 150b as heat sources, which are located outside the chamber 100, and LED mounting substrates 151a and 151b, each mounted on a surface of the LED mounting substrates 151a and 151b. The LED mounting substrates 151a and 151b are embedded in the bottom portion of the chamber 100's floor 112, and the LED light sources 150a and 150b are positioned below the quartz windows 114a and 114b. Specifically, the LED light sources 150a and 150b are positioned corresponding to the buffer units 101a and 101b, the shower heads 140a and 140b, and the quartz windows 114a and 114b, respectively. Then, LED light emitted from the LED light sources 150a and 150b passes through the quartz windows 114a and 114b and is irradiated onto the wafers W held in the buffers 101a and 101b. The LED light heats the wafers W to a desired temperature.

[0079] The LED light has a wavelength that can pass through the quartz windows 114a and 114b and be absorbed by the silicon wafer W. Specifically, the wavelength of the LED light is, for example, 400 nm to 1100 nm, more preferably 800 nm to 1100 nm, and in this embodiment is 855 nm.

[0080] Cooling plates 153a and 153b are installed on the backside of the LED mounting substrates 151a and 151b, sandwiching heat transfer plates 152a and 152b, to cool the LED light sources 150a and 150b. Because there is a slight gap between the LED mounting substrates 151a and 151b and the cooling plates 153a and 153b, the heat transfer plates 152a and 152b are installed to improve heat transfer. Cooling water, for example, flows through the cooling plates 153a and 153b as a cooling medium. Each cooling plate 153a and 153b is connected to a cooling water supply source 155, which is configured to supply cooling water, via a cooling water supply pipe 154.

[0081] An LED control substrate 156 for controlling the LED light sources 150a and 150b is provided below the cooling plates 153a and 153b. The LED control substrate 156 is provided in common for both LED light sources 150a and 150b. The LED control substrate 156 is connected to an LED power supply 157. Components 158 that require cooling, such as FETs and diodes, are mounted on the surface of the LED control substrate 156. These components 158 are provided on the cooling plates 153a and 153b via heat transfer pads 159. In other words, the cooling plates 153a and 153b cool the components 158 in addition to the aforementioned LED light sources 150a and 150b. Furthermore, components 160 that do not require cooling are provided on the back side of the LED control substrate 156.

[0082] The exhaust unit 105 includes an exhaust pipe 170 for discharging the gas inside the chamber 100. The exhaust pipe 170 is arranged at a position outside the quartz windows 114a and 114b in the base plate 112. Quartz windows 114a and 114b, LED light sources 150a and 150b, etc. are provided below the wafer W, so the exhaust pipe 170 is arranged at a position offset relative to these quartz windows 114a and 114b, LED light sources 150a and 150b, etc. The exhaust pipe 170 is connected to a pump 172 via a valve 171. The valve 171 uses, for example, an automatic pressure control valve (APC valve). The pump 172 uses, for example, a turbomolecular pump (TMP). Moreover, when the pump 172 is used, the gas inside the chamber 100 can be forcibly discharged at a relatively high pressure.

[0083] The temperature measurement units 106a and 106b use, for example, radiation thermometers, and each of the temperature measurement units 106a and 106b measures the temperature of the wafer W held in the buffer units 101a and 101b, respectively. The temperature measurement units 106a and 106b are provided so as to penetrate the top plate 111 of the chamber 100. In addition, the structures of the temperature measurement units 106a and 106b and the method for measuring the temperature of the wafer W will be described later.

[0084] <Operation of the PHT module>

[0085] The PHT module 42 according to the present embodiment is configured as described above. Next, the PHT process (heating and cooling process) in the PHT module 42 will be described. Figure 3 It is an explanatory diagram showing a case where the PHT process is executed in the PHT module 42. In addition, Figure 3 Half of the chamber 100 (for example, the buffer unit 101a, the temperature measurement unit 106a, the quartz window 114a, the shower head 140a, the LED light source 150a, etc.) is shown, that is, one wafer W, but actually two wafers W are processed simultaneously.

[0086] First, open the gate valve 46. As shown in (a) of Figure 3 , the wafer W is loaded into the PHT module 42 at the transfer position P1 and transferred from the transfer arm 51a of the wafer transfer mechanism 50 to the buffer unit 101a. After that, close the gate valve 46.

[0087] Next, as shown in (b) of Figure 3 , lower the buffer unit 101a and place the wafer W at the heating position P2. The heating position P2 is a position as close as possible to the LED light source 150a. For example, the distance between the wafer W and the LED light source 150a is 200 mm or less. After that, the temperature of the wafer W is measured by the temperature measurement unit 106a. Thereby, the reference temperature of the wafer W is confirmed.

[0088] Next, turn on the LED light source 150a. The LED light emitted from the LED light source 150a passes through the quartz window 114a and irradiates the wafer W. As a result, the wafer W is heated to a desired heating temperature, for example, 300 °C (heating process step). As will be described later, the heating temperature of 300 °C is a temperature above the sublimation temperature of the AFS on the wafer W. The heating rate is, for example, 12 °C / second. In this way, the heating rate of the present embodiment is faster than the heating rate (0.45 °C / second) of the heater used in the past, and the heating process of the wafer W can be efficiently performed in a short time, thereby improving the productivity of wafer processing. In addition, the LED light source 150a performs pulse control of the LED light so that the temperature is within a fixed range. PWM control is performed with the period of the switching frequency set to 1 kHz to 500 kHz, for example.

[0089] At this time, N2 gas is supplied as a purge gas from the showerhead 140a of the gas supply unit 103. Furthermore, the pressure inside the chamber 100 is adjusted to, for example, 0.1 Torr to 10 Torr. Since the N2 gas from the showerhead 140a is uniformly supplied through the multiple openings 144, the flow of gas inside the chamber 100 can be rectified.

[0090] Furthermore, at this time, the temperature measuring unit 106a measures the temperature of the wafer W and performs feedback control on the LED light source 150a. Specifically, the LED light emitted from the LED light source 150a is controlled based on the temperature measurement result so that the wafer W reaches a desired heating temperature.

[0091] Then, the temperature of the wafer W is maintained at 300°C. After a desired period of time, the AFS on the wafer W is heated to vaporize (sublime). The LED light source 150a is then turned off. The endpoint detection method at this time is arbitrary, but for example, monitoring can be performed using a gas analyzer (e.g., OES, QMS, FT-IR, etc.) or a film thickness meter.

[0092] Then, if Figure 3 As shown in (c), the buffer unit 101a is raised to place the wafer W at the cooling position P3. The cooling position P3 is as close as possible to the shower head 140a, for example, the distance between the wafer W and the shower head 140a is 200 mm or less.

[0093] Next, N2 gas is supplied as a cooling gas from the shower head 140a to cool the wafer W to a desired cooling temperature, for example, 180°C (cooling treatment process). The cooling temperature of 180°C is a temperature at which the conveying arm 51b of the wafer conveying mechanism 50 can maintain the wafer W. The cooling rate is, for example, 11°C / second. In this way, the cooling rate of this embodiment is faster than the cooling rate of the previous natural cooling (0.5°C / second), and the cooling process of the wafer W can be efficiently performed in a short time, thereby further improving the productivity of the wafer processing. In addition, since the N2 gas from the shower head 140a is uniformly supplied from multiple openings 144, the wafer W can be uniformly cooled.

[0094] During the transition from the heating process to the cooling process, N2 gas is continuously supplied from shower head 140a. The N2 gas supply rate during the cooling process is, for example, 40 L / min, which is higher than the N2 gas supply rate during the heating process. The N2 gas supply rate depends on the volume of chamber 100. Furthermore, the pressure inside chamber 100 during the cooling process is between 1 Torr and 100 Torr, which is higher than the pressure during the heating process.

[0095] Afterwards, when the wafer W reaches the desired cooling temperature, the N2 gas supply rate during the cooling process is restored. The endpoint detection method at this time is arbitrary, but for example, it can be controlled by cooling time or the temperature of the wafer W can be measured by the temperature measuring unit 106a.

[0096] Next, the buffer portion 101a is lowered and the Figure 3 As shown in FIG. 1 ( a ), the wafer W is placed at the transfer position P1 . Then, the gate valve 46 is opened, and the wafer W is transferred from the buffer 101 a to the transfer arm 51 b of the wafer transfer mechanism 50 . Then, the wafer W is unloaded from the PHT module 42 .

[0097] Furthermore, during the PHT process (heating and cooling process) in the PHT module 42, the interior of the chamber 100 is exhausted by the exhaust unit 105. In normal operation, exhaust is performed by N2 gas from the shower head 140a. However, the exhaust time can be shortened by operating the pump 172 for high-speed exhaust.

[0098] <Temperature Measurement Section>

[0099] Next, the configuration of the temperature measuring units 106a and 106b will be described. Figure 4 It is a longitudinal cross-sectional view schematically showing the structure of the temperature measuring parts 106a and 106b.

[0100] The temperature measuring units 106a and 106b include a thermopile 180, a heat-sensitive sensor; a diamond window 181, an infrared-transmitting window; and an optical aperture 182 connecting the thermopile 180 and the diamond window 181. The thermopile 180 is located outside the chamber 100 at the base of the optical aperture 182. The diamond window 181 is located within the top plate 111 at the tip of the optical aperture 182, sealing the interior of the chamber 100. Furthermore, a sealing member 183 is provided between the optical aperture 182 and the outer surface of the chamber 100 to maintain an airtight seal within the chamber 100.

[0101] Thermopile 180 is housed in a metal package, for example, and includes multiple thermocouples (not shown). Thermopile 180 converts thermal energy (radiant energy) into electrical energy. Specifically, thermopile 180 receives infrared radiation emitted from wafer W and outputs an electrical signal based on the received light. Thermopile 180 also includes a thermistor (temperature sensor) that measures the temperature of thermopile 180.

[0102] Here, in the PHT module 42 of this embodiment, as described later, the wafer W is heated to a desired heating temperature, for example, 300° C. Therefore, the temperature of the wafer W measured by the temperature measuring units 106 a and 106 b is higher than room temperature and lower than 300° C.

[0103] Figure 5 This graph shows the relationship between the wavelength of light (horizontally) and the radiant energy (vertically). Generally speaking, when the temperature of an object is high, the radiant energy changes greatly, resulting in higher resolution. However, when the temperature of an object is low, the radiant energy changes less, resulting in lower resolution.

[0104] Figure 6 This is a graph showing the relationship between the wavelength of light (horizontal axis) and the transmittance of silicon (vertical axis). Radiation thermometers using conventional thermopiles mostly measure light with a wavelength of, for example, 2μm to 10μm. The thermopile has large radiation energy and high sensitivity, but because silicon transmits light in the above wavelength range, it cannot measure temperature. On the other hand, radiation thermometers that use photodiodes for silicon temperature measurement measure light with a wavelength of, for example, 1.1μm or less. This photodiode can measure wavelengths that are not transparent to silicon, but because the radiation energy is small, it cannot measure at low temperatures, for example, below 300°C.

[0105] As described above, the thermopile 180 of this embodiment measures light having a wavelength of 8 μm or greater. In this case, the transmittance of silicon is low, and therefore the temperature of the wafer W made of silicon can be measured.

[0106] Conventional thermopiles are equipped with a filter window to protect multiple thermocouples. The filter window is made of, for example, silicon or germanium. Furthermore, the filter window is provided with a membrane that transmits infrared light within a desired wavelength range. In other words, the filter window limits the wavelength of infrared light that is transmitted. In contrast, thermopile 180 of this embodiment eliminates this filter window, resulting in a configuration capable of receiving infrared light of various wavelengths. This allows thermopile 180 to measure light of 8 μm and above, as described above.

[0107] In this embodiment, the thermopile 180 (electromotive force type) is used as the hot wire induction type sensor, but the present invention is not limited thereto. For example, a bolometer (resistance type) or a pyroelectric element (charge type) may be used as the hot wire induction type sensor.

[0108] Diamond window 181 transmits infrared light having a wavelength of, for example, 8 μm to 100 μm. As described above, the thermopile 180 of this embodiment measures infrared light having wavelengths greater than 8 μm, so diamond window 181 transmits infrared light having these wavelengths. Furthermore, a thermocouple (not shown) is provided in diamond window 181 to measure the temperature of diamond window 181.

[0109] Alternatively, a film that transmits infrared rays having a wavelength of 8 μm or more may be provided on the diamond window 181 to use the diamond window 181 as a bandpass filter.

[0110] In this embodiment, diamond is used as the material for the infrared-transmitting window, but the material is not limited to this. Any material that transmits infrared light with a wavelength of 8 μm or greater can be used. For example, potassium bromide (KBr) transmits infrared light with a wavelength of 20 μm or less, and barium fluoride (BaF2) transmits infrared light with a wavelength of 14 μm or less, and these materials can be used as infrared-transmitting windows.

[0111] The optical aperture 182 has a cylindrical shape, for example, and suppresses incident light from various directions, narrowing the field of view so as not to measure the temperature of areas other than the wafer W. Alternatively, an infrared transmitting lens (not shown) may be used instead of the optical aperture 182 .

[0112] The temperature measuring units 106 a and 106 b according to this embodiment are configured as described above. Next, a method for measuring the temperature of the wafer W using the temperature measuring units 106 a and 106 b will be described.

[0113] When wafer W is loaded into chamber 100 for processing, infrared light radiated from wafer W passes through diamond window 181 and is received by thermopile 180. While the infrared light radiated from wafer W has a wavelength of 8 μm or greater, diamond window 181 adequately transmits infrared light of this wavelength. Upon receiving the infrared light, thermopile 180 outputs an electrical signal based on the result of the light reception.

[0114] At this time, the temperature of thermopile 180 is measured by the thermistor of thermopile 180. Similarly, the temperature of diamond window 181 is measured by a thermocouple provided on diamond window 181, and the temperature of quartz windows 114a and 114b is measured by thermocouples provided on quartz windows 114a and 114b.

[0115] Furthermore, the temperature measuring units 106a and 106b calculate the temperature of the wafer W by removing (eliminating) the influence of temperature, which constitutes noise, from the output from the thermopile 180. Specifically, in this embodiment, the temperature of the wafer W is calculated using the following equation (1). In equation (1), the output of the thermopile 180 is expressed as voltage, and the unit of other temperatures is °C.

[0116] [Temperature of wafer W] = coefficient A × [output from thermopile 180] + coefficient B × [temperature of thermopile 180] + coefficient C × [temperature of diamond window 181] + coefficient D × [temperature of quartz windows 114a, 114b] + intercept (1)

[0117] The temperature of thermopile 180 may become noise when measuring the temperature of wafer W. Therefore, the influence of the temperature of thermopile 180 is eliminated in the above equation (1).

[0118] The chamber 100 itself is also heated when processing the wafer W. The temperature of the diamond window 181 provided in the chamber 100 may also become noise. Therefore, the influence of the temperature of the diamond window 181 is eliminated in the above equation (1).

[0119] Quartz windows 114a and 114b transmit light with a wavelength of 2 μm or less, but block light with a wavelength of 2 μm or greater. Furthermore, quartz windows 114a and 114b are heated to a desired temperature by heating plates 115a and 115b. When light with a wavelength of 2 μm or greater is radiated from quartz windows 114a and 114b by thermal energy, this light enters thermopile 180. This can also cause the temperature of quartz windows 114a and 114b to become noise. Therefore, the influence of the temperature of quartz windows 114a and 114b is eliminated in equation (1).

[0120] Furthermore, when thermopile 180, diamond window 181, and optical aperture 182 are thermally coupled, it is assumed that they have the same temperature. In this case, the influence of the temperature of diamond window 181 can be replaced by the influence of the temperature of thermopile 180. Therefore, the temperature of wafer W is calculated using the following equation (2), which does not include the term for the influence of the temperature of diamond window 181 in equation (1).

[0121] [Temperature of wafer W] = coefficient A × [output from thermopile 180 ] + coefficient B × [temperature of thermopile 180 ] + coefficient C × [temperature of quartz windows 114 a , 114 b ] + intercept (2)

[0122] In order to improve the linearity of the above equation (1) or (2), a quadratic term (square term) may be added to the right side of the equation (1) or (2), or the equation (1) or (2) may be logarithmically transformed.

[0123] When an infrared-transmitting lens is used instead of the optical aperture 182 , the term of [temperature of the thermopile 180 ] is incorporated into the term of [output of the thermopile 180 ] in the above equations (1) and (2), and thus the term of [temperature of the thermopile 180 ] is omitted.

[0124] Before the wafer W is processed in the PHT module 42, the above equation (1) or (2) is derived in advance. Next, the method of deriving the equation will be described. The following describes the method of deriving equation (2), but the method of deriving equation (1) is also the same.

[0125] First, while heating the wafer W, the quartz window 114a and the thermopile 180 are controlled to independent temperatures for measurement. A thermocouple is set on the wafer W to measure the temperature. This wafer W is the wafer used for temperature measurement to derive equation (2). However, a thermocouple can also be set on a single wafer W that will become a product to confirm the accuracy of equation (2).

[0126] Figure 7 This graph shows the relationship between the temperature of the wafer W (horizontal axis) and the output of the thermopile 180 (vertical axis), as measured by the temperatures of the quartz window 114a and the thermopile 180. Specifically, the wafer W was heated from room temperature to approximately 90°C. Furthermore, the temperature of the quartz window 114a was varied to 27°C, 28°C, 41°C, and 66°C, and the temperature of the thermopile 180 was varied to 29°C, 52°C, and 71°C. The temperatures of the quartz window 114a and the thermopile 180 described above represent the temperature ranges that the PHT module 42 can achieve.

[0127] Next, use Figure 7 The output of the thermopile 180, the temperature of the thermopile 180, and the temperature of the quartz window 114a are subjected to a multiple regression analysis to calculate the coefficients and intercept in equation (2). Specifically, Figure 8 As shown, equation (2) is derived so that the temperature of the wafer W measured by the thermocouple (horizontal axis) is consistent with the temperature of the wafer W calculated using equation (2), which is a multiple regression equation (calibration equation). In this example, the coefficients and intercepts in equation (2) are derived as shown in the following equation (2').

[0128] [Temperature of wafer W] = 148.5 × [output from thermopile 180 ] + 2.1 × [temperature of thermopile 180 ] − 1.1 × [temperature of quartz windows 114 a , 114 b ] − 194.2 (2′)

[0129] Furthermore, when the LED light sources 150a and 150b are operated, the temperature of the LED light sources 150a and 150b may also become noise. However, since it is difficult to measure the temperature of the LED light sources 150a and 150b, the formula (2) is derived with the operation of the LED light sources 150a and 150b stopped. However, when the temperature of the LED light sources 150a and 150b can be measured, the temperature of the wafer W can also be calculated using the following formula (3). [Temperature of wafer W] = coefficient A × [output from the thermopile 180] + coefficient B × [temperature of the thermopile 180] + coefficient C × [temperature of the diamond window 181] + coefficient D × [temperature of the quartz windows 114a and 114b] + coefficient E × [temperature of the LED light sources 150a and 150b] + intercept…(3)

[0130] According to the above embodiment, by using the temperature measuring units 106a and 106b as radiation thermometers and using equations (1) or (2), the influence of temperature that can cause noise can be eliminated, and the temperature of the wafer W in the temperature range between room temperature and 300°C can be measured without contacting the wafer W. Therefore, even in a reduced pressure atmosphere (vacuum atmosphere) such as the PHT module 42, the temperature of the wafer W can be appropriately measured. Furthermore, the LED light sources 150a and 150b can be feedback-controlled based on the temperature measurement results of the wafer W, thereby appropriately adjusting the heating temperature of the wafer W.

[0131] In addition, sometimes a desired film is formed in advance on the wafer W processed by the PHT module 42. The emissivity of the wafer W with the film is different from the emissivity of the bare wafer made of silicon. In this case, the radiation amount of the wafer W just after it is moved into the PHT module 42 is measured, the emissivity correction coefficient is calculated, and it is reflected in the above formula (1) or (2). Specifically, for example, it is assumed that the wafer W moved out of the front-opening wafer conveyor box 31 is at the same temperature as the ambient temperature, and a temperature correction factor corresponding to the ambient temperature is set on the conveyor module 40. Figure 4 The temperature measuring units 106a and 106b shown are identical. The emissivity correction coefficient can be calculated based on the difference between the temperature measured by the temperature measuring unit and the ambient temperature. Furthermore, it is desirable that the measurement location on the wafer W at this time be the same location as the measurement location by the PHT module 42.

[0132] <Other Implementations>

[0133] In the PHT module 42 of the above embodiment, as Figure 9 As shown, the LED mounting substrates 151a, 151b (LED light sources 150a, 150b) can be divided into a plurality of zones Z1 to Z14 when viewed from above. The LED mounting substrates 151a, 151b are divided radially into a central portion (Center), an intermediate portion (Middle), and an outer peripheral portion (Edge). The central portion is divided into four zones Z1 to Z4, the intermediate portion is divided into four zones Z5 to Z8, and the outer peripheral portion is divided into six zones Z9 to Z14. In addition, the number of divisions of the LED mounting substrates 151a, 151b is not limited to this embodiment and can be set arbitrarily. For example, when a temperature difference occurs within the wafer surface due to the relationship between the distance between the components surrounding the LED light sources 150a, 150b, the outer peripheral portion can be divided into a number corresponding to the temperature difference.

[0134] LED light sources 150a and 150b each have approximately 200 LED elements in each zone Z1 to Z14. This equalizes the number of LED elements in each zone Z1 to Z14, allowing the voltage in each zone Z1 to Z14 to be equal. In this embodiment, the voltage of one LED element is 1.8V, suppressing the voltage in each zone Z1 to Z14 to 400V. Furthermore, a maximum potential difference of approximately 200V occurs between zones Z1 to Z14, requiring a corresponding insulation distance. The number of LED elements in each zone Z1 to Z14 is not limited to that in this embodiment and can be set arbitrarily.

[0135] When LED light sources 150a and 150b are divided into a plurality of zones Z1 to Z14, the temperature of each zone Z1 to Z14 can be measured when the temperature measuring units 106a and 106b measure the temperature of the wafer W. In this case, the temperature of each zone Z1 to Z14 can also be measured using equations (1) or (2). Furthermore, appropriate feedback control can be performed on the LED elements in each zone Z1 to Z14 based on the measurement results.

[0136] While the PHT module 42 of the above embodiment uses LED light sources 150a and 150b to measure the temperature of wafers W processed in a reduced pressure atmosphere (vacuum atmosphere), the temperature measuring units 106a and 106b of the present disclosure can also be applied to conventional PHT modules. Specifically, even when PHT processing is performed while wafers W are mounted on a mounting table embedded with a heater, the temperature measuring units 106a and 106b can be provided in the PHT module to measure the temperature of the wafers W.

[0137] In this case, since the quartz windows 114 a and 114 b are not provided in the PHT module, the temperature of the wafer W is calculated using the following equation (4) by removing the term affecting the temperature of the quartz windows 114 a and 114 b from equation (1).

[0138] [Temperature of wafer W] = coefficient A × [output from thermopile 180 ] + coefficient B × [temperature of thermopile 180 ] + coefficient C × [temperature of diamond window 181 ] + intercept (4)

[0139] Furthermore, when measuring the temperature of the heater (heat source) on the mounting table, the temperature of the wafer W can be calculated using the following equation (5) by adding the term affecting the heater temperature to the above equation (4). [Temperature of wafer W] = coefficient A × [output from thermopile 180] + coefficient B × [temperature of thermopile 180] + coefficient C × [temperature of diamond window 181] + coefficient D × [temperature of mounting table heater] + intercept (5)

[0140] In the above embodiment, the temperature of the wafer W in the PHT module 42 is measured, but the temperature measuring units 106a and 106b of the present disclosure can also be applied to other devices, such as etching devices, to measure the temperature of wafers W processed in various devices.

[0141] The embodiments disclosed herein are to be considered in all respects as illustrative and non-restrictive, and the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope of the appended claims and the spirit thereof.

[0142] In addition, the following structures also belong to the technical scope of the present disclosure.

[0143] (1) A substrate processing device for processing a substrate, the substrate processing device comprising: a chamber for accommodating the substrate; a heat source for heat-processing the substrate; a heat-sensitive sensor disposed outside the chamber for receiving infrared rays radiated from the substrate; and an infrared transmission window disposed in the chamber for transmitting infrared rays having a wavelength of 8 μm or greater toward the heat-sensitive sensor.

[0144] According to (1), a heat-sensitive sensor receives infrared radiation from a substrate through an infrared transmission window, and the heat-sensitive sensor outputs an electrical signal corresponding to the light reception result. Furthermore, based on this output result, the temperature of the substrate is calculated, eliminating the influence of the temperature of the heat-sensitive sensor and the temperature of the infrared transmission window, which constitute noise. Thus, the temperature of the substrate in a desired temperature range can be measured without contacting the substrate. Furthermore, feedback control of the heat source can be performed based on the substrate temperature measurement result, thereby appropriately adjusting the heat treatment temperature of the substrate.

[0145] (2) According to the substrate processing apparatus described in (1), the hot wire sensing sensor is a thermopile.

[0146] (3) According to the substrate processing apparatus described in (1) or (2), the infrared ray transmission window is made of diamond.

[0147] (4) The substrate processing apparatus according to any one of (1) to (3) above, further comprising an optical aperture connecting the heat sensitive sensor and the infrared transmission window.

[0148] (5) According to any one of (1) to (4), the heat source is an LED light source arranged outside the chamber, and the substrate processing device has an LED transmission window, which is arranged in the chamber and allows the LED light irradiated from the LED light source to pass through.

[0149] (6) According to the substrate processing apparatus described in (5), the LED transmission window is made of quartz.

[0150] According to (5) or (6), the substrate is heated using an LED light source, and the heating speed is faster than that of conventional heaters. Therefore, the substrate can be heated efficiently in a short time, resulting in improved substrate processing productivity. Furthermore, in such a substrate processing apparatus, the substrate temperature can also be appropriately measured.

[0151] (7) In the substrate processing apparatus according to any one of (1) to (6), the temperature of the substrate measured by the hot-wire sensor is higher than room temperature and lower than 300° C.

[0152] According to (7), the temperature of a substrate at a temperature not lower than room temperature and not higher than 300° C. can be measured, and for example, the temperature of a substrate during a PHT process can be measured.

[0153] (8) A substrate processing method is a method for processing a substrate, the substrate processing method comprising the following steps: step a), moving the substrate into the interior of a chamber; step b), performing heat treatment on the substrate using a heat source; step c), receiving infrared rays radiated from the substrate through an infrared transmission window by a heat-sensitive sensor provided outside the chamber, the infrared transmission window being provided in the chamber and transmitting infrared rays having a wavelength of 8 μm or more; step d), outputting an electrical signal corresponding to the light-receiving result from the heat-sensitive sensor; and step e) calculating the temperature of the substrate based on the following formula (1).

[0154] [Temperature of substrate] = coefficient A × [output from the hot-wire sensor] + coefficient B × [temperature of the hot-wire sensor] + coefficient C × [temperature of the infrared transmission window] + intercept (1)

[0155] (9) According to the substrate processing method described in (8), in the step e), the temperature of the substrate is calculated based on the following formula (2) by further considering the influence of the temperature of the heat source in addition to the formula (1).

[0156] [Temperature of substrate] = coefficient A × [output from the heat sensitive sensor] + coefficient B × [temperature of the heat sensitive sensor] + coefficient C × [temperature of the infrared transmission window] + coefficient D × [temperature of the heat source] + intercept (2)

[0157] (10) According to the substrate processing method described in (9), the heat-sensitive sensor is thermally coupled to the infrared-transmitting window, and in the step e), the temperature of the substrate is calculated based on the following equation (3) in which the equation (2) is replaced.

[0158] [Temperature of substrate] = coefficient A × [output from the hot wire sensor] + coefficient B × [temperature of the hot wire sensor] + coefficient C × [temperature of the heat source] + intercept (3)

[0159] (11) According to the substrate processing method described in any one of (8) to (10), the heat source is an LED light source arranged outside the chamber, and in the step b), the LED light emitted from the LED light source is irradiated onto the substrate through the LED window arranged in the chamber to heat the substrate.

[0160] (12) According to the substrate processing method described in (11), in the step e), the temperature of the substrate is calculated based on the following formula (4) by further considering the influence of the temperature of the LED transmission window on the basis of the formula (1).

[0161] [Temperature of substrate] = coefficient A × [output from the heat sensitive sensor] + coefficient B × [temperature of the heat sensitive sensor] + coefficient C × [temperature of the infrared transmission window] + coefficient D × [temperature of the LED transmission window] + intercept (4)

[0162] (13) The substrate processing method according to (12) is characterized in that the equation (3) is derived while the operation of the LED light source is stopped.

[0163] (14) According to the substrate processing method described in (12) or (13), the heat-sensitive sensor is thermally coupled to the infrared-transmitting window, and in the step e), the temperature of the substrate is calculated based on the following formula (5) replacing the formula (4).

[0164] [Temperature of substrate] = coefficient A × [output from the hot-wire sensor] + coefficient B × [temperature of the hot-wire sensor] + coefficient C × [temperature of the LED transmission window] + intercept (5)

[0165] (15) According to the substrate processing method described in any one of (11) to (14), the LED light source is divided into a plurality of zones, and in the step e), the temperature of the substrate is measured for each of the zones.

[0166] (16) According to the substrate processing method described in any one of (8) to (15), the temperature of the substrate measured using the hot wire sensor is higher than room temperature and lower than 300°C.

[0167] Description of Reference Numerals

[0168] 42: PHT module; 100: chamber; 150a, 150b: LED light source; 180: thermopile; 181: diamond window; W: wafer.

Claims

1. A substrate processing device for processing a substrate, the substrate processing device comprising: a chamber for receiving a substrate; a heat source for thermally treating the substrate; a heat-sensitive sensor disposed outside the chamber and receiving infrared rays radiated from the substrate; an infrared transmission window provided in the chamber and configured to transmit infrared rays having a wavelength of 8 μm or more toward the heat-sensitive sensor; as well as A controller controls the substrate processing apparatus to perform substrate processing, wherein the substrate processing includes the following steps: Step a), moving the substrate into the chamber; Step b), heat-treating the substrate using a heat source; Step c) receiving infrared rays radiated from the substrate via an infrared transmitting window by a heat-sensitive sensor provided outside the chamber; Step d) outputting an electrical signal corresponding to the light reception result from the hot wire induction sensor; and Step e) Calculate the temperature of the substrate based on the following formula (1): [Temperature of substrate]=coefficient A×[output from the hot-wire sensor]+coefficient B×[temperature of the hot-wire sensor]+coefficient C×[temperature of the infrared transmission window]+intercept (1).

2. The substrate processing apparatus according to claim 1, wherein: The hot wire induction sensor is a thermopile.

3. The substrate processing apparatus according to claim 1 or 2, wherein: The infrared ray transmitting window is made of diamond.

4. The substrate processing apparatus according to claim 1 or 2, wherein: An optical aperture is provided, and the optical aperture connects the heat-sensitive sensor and the infrared transmission window.

5. The substrate processing apparatus according to claim 1 or 2, wherein: The heat source is an LED light source arranged outside the chamber, The substrate processing apparatus includes an LED transmission window provided in the chamber and transmitting LED light emitted from the LED light source.

6. The substrate processing apparatus according to claim 5, wherein: The LED transmission window is made of quartz.

7. The substrate processing apparatus according to claim 1 or 2, wherein: The temperature of the substrate measured using the hot wire sensor is higher than room temperature and lower than 300° C.

8. A substrate processing method is a method for processing a substrate, comprising the following steps: Step a), moving the substrate into the chamber; Step b), heat-treating the substrate using a heat source; Step c) receiving infrared rays radiated from the substrate via an infrared transmission window provided in the chamber by a heat-sensitive sensor provided outside the chamber, the infrared transmission window being provided in the chamber and transmitting infrared rays having a wavelength of 8 μm or greater; Step d) outputting an electrical signal corresponding to the light reception result from the hot wire induction sensor; and Step e) Calculate the temperature of the substrate based on the following formula (1): [Temperature of substrate]=coefficient A×[output from the hot-wire sensor]+coefficient B×[temperature of the hot-wire sensor]+coefficient C×[temperature of the infrared transmission window]+intercept (1).

9. The substrate processing method according to claim 8, wherein: In the step e), the temperature of the substrate is calculated based on the following formula (2) by further considering the influence of the temperature of the heat source on the basis of the formula (1): [Temperature of substrate] = coefficient A × [output from the hot-wire sensor] + coefficient B × [temperature of the hot-wire sensor] + coefficient C × [temperature of the infrared transmission window] + coefficient D × [temperature of the heat source] + intercept…(2).

10. The substrate processing method according to claim 9, wherein: The heat-sensitive sensor is thermally coupled to the infrared transmission window. In the step e), the temperature of the substrate is calculated based on the following formula (3) which replaces the formula (2): [Temperature of the substrate] = coefficient A × [output from the hot wire sensor] + coefficient B × [temperature of the hot wire sensor] + coefficient C × [temperature of the heat source] + intercept…(3).

11. The substrate processing method according to claim 10, wherein: The heat source is an LED light source arranged outside the chamber, In the step b), the substrate is irradiated with LED light emitted from the LED light source through an LED transmission window provided in the chamber, thereby heating the substrate.

12. The substrate processing method according to claim 11, wherein: In the step e), the temperature of the substrate is calculated based on the following formula (4) by further considering the influence of the temperature of the LED transmission window on the basis of the formula (1): [Temperature of substrate] = coefficient A×[output from the hot-wire sensor] + coefficient B×[temperature of the hot-wire sensor] + coefficient C×[temperature of the infrared transmission window] + coefficient D×[temperature of the LED transmission window] + intercept…(4).

13. The substrate processing method according to claim 12, wherein: The equation (3) is derived while the operation of the LED light source is stopped.

14. The substrate processing method according to claim 12 or 13, wherein: The heat-sensitive sensor is thermally coupled to the infrared transmission window. In the process e), the temperature of the substrate is calculated based on the following formula (5) which replaces the formula (4): [Temperature of the substrate] = coefficient A × [output from the hot wire sensor] + coefficient B × [temperature of the hot wire sensor] + coefficient C × [temperature of the LED transmission window] + intercept…(5).

15. The substrate processing method according to any one of claims 11 to 13, wherein: The LED light source is divided into multiple zones. In the step e), the temperature of the substrate is measured for each of the zones.

16. The substrate processing method according to any one of claims 8 to 13, wherein: The temperature of the substrate measured using the hot wire sensor is higher than room temperature and lower than 300° C.

17. The substrate processing method according to claim 8 or 9, characterized in that: The heat source is an LED light source arranged outside the chamber, In the step b), the substrate is irradiated with LED light emitted from the LED light source through an LED transmission window provided in the chamber, thereby heating the substrate.

Images