Substrate processing equipment

Abstract

The present invention relates to a substrate processing apparatus, comprising: a chamber providing a processing space; a cover covering an upper portion of the chamber; a substrate support unit supporting at least one substrate and rotatable about a rotation axis to pass the substrate through an imaging area; a gas injection unit for injecting a processing gas toward the substrate support unit; an area photography unit for photographing an image of the imaging area to obtain a thermal image of the imaging area; and a calculation unit for calculating temperature data of the substrate from the thermal image.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus that performs processing operations such as deposition and etching operations on a substrate. Background Art

[0002] Generally, in order to manufacture solar cells, semiconductor devices, flat panel displays, etc., a thin film layer, a thin film circuit pattern, or an optical pattern should be formed on a substrate. To this end, processing operations need to be performed on the substrate, and the processing operations may include, for example: a deposition operation of depositing a thin film containing a specific material on the substrate, a photolithography operation of selectively exposing a part of the thin film by using a photosensitive material, an etching operation of removing the selectively exposed part of the thin film to form a pattern, etc. Such processing operations are performed on the substrate by a substrate processing apparatus.

[0003] A prior art substrate processing apparatus includes a substrate support unit that supports a substrate and a gas injection unit that injects a processing gas toward the substrate support unit. The substrate support unit rotates about a rotation axis. Since the substrate support unit rotates about the rotation axis, the substrate supported by the substrate support unit passes through a region below the gas injection unit. In this process, a processing operation is performed on the substrate by using the processing gas injected by the gas injection unit.

[0004] In such a processing operation, the substrate temperature plays an important factor. In the prior art, in order to reflect the substrate temperature in the processing operation, the temperature distribution of the substrate is obtained by using a thermocouple (TC) wafer before the processing operation is performed.

[0005] The prior art substrate processing apparatus cannot obtain the temperature distribution of the substrate during the processing operation, and thus uses the predicted temperature distribution of the substrate obtained before the processing operation is performed to perform the processing operation. However, since many variables occur during the processing operation, a significant difference inevitably occurs between the predicted temperature distribution of the substrate and the actual temperature distribution of the substrate during the processing operation. Due to this difference, it is difficult for the prior art substrate processing apparatus to ensure the quality uniformity of the substrate on which the processing operation has been completed. Summary of the Invention

[0006] Technical Problem

[0007] The present invention can be used to solve the above problems, and the present invention provides a substrate processing apparatus for improving the quality uniformity of a substrate on which a processing operation has been completed.

[0008] Technical Solution

[0009] In order to achieve the above object, the present invention may include the following elements.

[0010] A substrate processing apparatus according to the present invention may include: a chamber providing a processing space; a cover covering an upper portion of the chamber; a substrate support unit supporting at least one substrate and rotating about a rotation axis to pass the substrate through a photographing area; a gas injection unit injecting a processing gas toward the substrate support unit; an area photographing unit photographing the photographing area to obtain a thermal image of the photographing area; and a calculation unit calculating temperature data of the substrate from the thermal image.

[0011] Advantageous Effects

[0012] According to the present invention, the following effects can be obtained.

[0013] The present invention is implemented to calculate temperature data when a processing process is performed on a substrate. Therefore, the quality uniformity of the substrate on which the processing process has been completed can be improved.

[0014] The present invention is implemented to calculate the temperature data of the substrate by photographing an area using the area photographing unit. Therefore, the present invention can enhance the easiness of the alignment operation of the area photographing unit and can shorten the time taken for the alignment operation of the area photographing unit. Therefore, the present invention can increase the operation rate to improve the productivity of the substrate on which the processing process has been completed. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 is a schematic side cross-sectional view of a substrate processing apparatus according to the present invention.

[0016] Figure 2 and Figure 3 is a schematic plan view showing an embodiment of a gas injection unit in a substrate processing apparatus according to the present invention.

[0017] Figure 4 is a schematic plan view showing an operation of obtaining a thermal image in a substrate processing apparatus according to the present invention.

[0018] Figure 5 is a block schematic view of a substrate processing apparatus according to the present invention.

[0019] Figure 6 is a schematic plan view showing a thermal image shown by a first measurement line and a second measurement line in a substrate processing apparatus according to the present invention.

[0020] Figure 7 is a graph showing first candidate data of the point-based temperature of a substrate corresponding to a first measurement line and second candidate data of the point-based temperature of the substrate corresponding to a second measurement line in a substrate processing apparatus according to the present invention. DETAILED DESCRIPTION

[0021] Hereinafter, embodiments of a substrate processing apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

[0022] Referring to Figure 1 , the substrate processing apparatus 1 according to the present invention performs a processing process on the substrate 100. The substrate 100 may be a glass substrate, a silicon substrate, a metal substrate, or the like. The substrate processing apparatus 1 according to the present invention can perform processing processes such as a deposition process of depositing a thin film on the substrate 100 and an etching process of removing a part of the thin film deposited on the substrate 100. Hereinafter, although an embodiment in which the substrate processing apparatus 1 according to the present invention performs a deposition process will be described, for those skilled in the art, an embodiment of performing another processing process such as an etching process can also be implemented according to the substrate processing apparatus 1 of the present invention.

[0023] The substrate processing apparatus 1 according to the present invention may include a substrate support unit 2, a cover member 3, a gas injection unit 4, an area photography unit 5, and a calculation unit 6.

[0024] Referring to Figure 1 , the substrate support unit 2 supports the substrate 100. The substrate support unit 2 may be coupled to the inside of the chamber 1a having a processing space for performing a processing process. The processing space may be located between the substrate support unit 2 and the aforementioned cover member 3. A substrate entrance and exit (not shown) may be coupled to the chamber 1a. By using a loading device (not shown), the substrate 100 can pass through the substrate entrance and exit and be loaded into the chamber 1a. When the processing process is completed, the substrate 100 can be unloaded to the outside of the chamber 1a through the substrate entrance and exit by an unloading device (not shown). An exhaust member 1b for exhausting the gas in the processing space to the outside may be coupled to the chamber 1a.

[0025] The substrate support unit 2 can rotate about the rotation axis 2a. When the substrate support unit 2 rotates about the rotation axis 2a, the substrate 100 supported by the substrate support unit 2 passes through the area below the gas injection unit 4 and simultaneously rotates about the rotation axis 2a. During this process, a processing gas ejected by the gas injection unit 4 can perform a processing process on the substrate 100. The substrate support unit 2 can support at least one substrate 100. When the substrate support unit 2 supports a plurality of substrates 100, the substrates 100 may be arranged to be spaced apart from each other with respect to the rotation axis 2a. A rotation device (not shown) that provides a rotational force may be coupled to the substrate support unit 2.

[0026] Referring to FIG. Figure 3 , the cover member 3 covers the upper part of the chamber 1a. The cover member 3 may be disposed at a distance above the substrate support unit 2. In Figure 2 and Figure 3In this case, the cover member 3 has a hexagonal structure, but is not limited thereto, and may also be a cylindrical structure, an elliptical structure, or a polygonal structure such as an octagonal structure. The chamber 1a may have a shape corresponding to that of the cover member 3.

[0027] Referring to FIG. Figure 3 , the gas injection unit 4 injects a process gas toward the substrate support unit 2. The gas injection unit 4 may be coupled to the cover member 3. Although not shown, the gas injection unit 4 may be coupled to the chamber 1a so that the gas injection unit 4 is disposed between the cover member 3 and the substrate support unit 2.

[0028] The gas injection unit 4 may include a first gas injection module 41 that injects a first gas and a second gas injection module 42 that injects a second gas. The first gas may be a source gas, and the second gas may be a reaction gas. The first gas injection module 41 and the second gas injection module 42 may be spaced apart from each other with respect to the rotation axis 2a. Therefore, when the substrate support unit 2 rotates about the rotation axis 2a, the substrate 100 sequentially passes through the regions below the first gas injection module 41 and below the second gas injection module 42 and rotates about the rotation axis 2a at the same time. Therefore, the processing process can be performed on the substrate 100 by using the first gas and the second gas. The gas injection unit 4 may include a plurality of first gas injection modules 41. The gas injection unit 4 may include a plurality of second gas injection modules 42.

[0029] The gas injection unit 4 may include a purge gas injection module 43 to eject a purge gas. The purge gas injection module 43 can eject the purge gas, and thus can divide the first region into which the first gas is injected and the second region into which the second gas is injected. Therefore, the purge gas injection module 43 can prevent the first gas and the second gas from mixing with each other between the first region and the second region. When the substrate support unit 2 rotates about the rotation axis 2a, the substrate 100 passes through the region below the purge gas injection module 43 and rotates about the rotation axis 2a at the same time. During this process, the residual gas remaining on the substrate 100 can be purged by the purge gas. As Figure 2 shown, the purge gas injection module 43 may be dumbbell-shaped and passes through the region between the first gas injection module 41 and the second gas injection module 42. As Figure 3 shown, the purge gas injection module 43 may be Y-shaped. Although not shown, the purge gas injection module 43 may be implemented in various other shapes based on the number of the first gas injection modules 41 and the number of the second gas injection modules 42. The gas injection unit 4 may include a plurality of purge gas injection modules 43.

[0030] Referring to FIG. Figure 4, the area imaging unit 5 images the imaging area 200 to obtain a thermal image of the imaging area 200. This thermal image is an area image of the imaging area and contains temperature information. The area imaging unit 5 can be a camera that uses infrared rays (IR) to obtain a thermal image of the imaging area 200. The substrate support unit 2 can rotate around the rotation axis 2a to move the substrate 100 through the imaging area 200. Therefore, the substrate processing apparatus 1 according to the present invention can perform a processing process while obtaining the temperature distribution of the substrate 100, and thus can change the processing conditions based on the temperature distribution of the substrate 100. Therefore, the substrate processing apparatus 1 according to the present invention can improve the quality uniformity of the substrate after the processing process is completed. Moreover, the substrate processing apparatus 1 according to the present invention can obtain the temperature distribution of the substrate 100 by imaging an area using the area imaging unit 5, and thus has the following advantages compared with a comparative example in which the temperature distribution of the substrate 100 is obtained by using a line scanner.

[0031] First, in the comparative example in which the temperature distribution of the substrate 100 is obtained by using a line scanner, the position of the line scanner should be accurately aligned with the position of the substrate 100. Therefore, in the comparative example, it is difficult to perform the alignment operation at the initial setting stage, and it is quite time-consuming to perform the alignment operation on the line scanner, resulting in the disadvantage of delaying the initial setting time. Such a disadvantage will have an adverse effect on the process of reinstalling the line scanner after maintenance and repair.

[0032] In this document, in the embodiment in which the temperature distribution of the substrate 100 is obtained by imaging an area using the area imaging unit 5, the allowable error range of the alignment operation of the area imaging unit 5 with respect to the position of the substrate 100 can be larger than that in the comparative example. This is because the area imaging unit 5 images an area to obtain a thermal image, and the error range can be compensated by calibration within this thermal image. Therefore, compared with the comparative example, the substrate processing apparatus 1 according to the present invention can shorten the time for performing the alignment operation of the area imaging unit 5, and thus has advantages such as shortening the initial setting time and the reinstallation time. Therefore, the substrate processing apparatus 1 according to the present invention can increase the operation efficiency, thereby improving the productivity of the substrate after the processing process is completed.

[0033] Second, in the comparative example in which the temperature distribution of the substrate 100 is obtained by using a line scanner, the temperature distribution of the substrate 100 is obtained by continuously performing point measurements to measure a line. However, since the point measurements are performed while the substrate is rotating, a measurement time difference will occur between the first measurement point and the second measurement point in the comparative example. Therefore, the accuracy of the temperature distribution of the substrate 100 in the comparative example decreases.

[0034] In this text, in an embodiment where a region is photographed by using the region photographing unit 5 to obtain the temperature distribution of the substrate 100, the temperature distribution of the substrate 100 can be obtained by instantaneously photographing a thermal image while the substrate is rotating. Therefore, in the thermal image obtained by instantaneously photographing with the region photographing unit 5, there is no measurement time difference between the measurement points. Therefore, compared with the comparative example, this embodiment can improve the accuracy of the temperature distribution of the substrate 100.

[0035] Third, in the comparative example where the temperature distribution of the substrate 100 is obtained by using a line scanner, although point measurements are continuously performed, due to the peak-to-peak period, different error values occur at each measurement point every time the measurement point is executed. Therefore, in the comparative example, the accuracy of the temperature distribution of the substrate 100 decreases.

[0036] In this text, in an embodiment where a region is photographed by using the region photographing unit 5 to obtain the temperature distribution of the substrate 100, since the thermal image is obtained by instantaneously photographing, even if an error value occurs within the thermal image, the same error value occurs at all measurement points. Therefore, compared with the comparative example, this embodiment can improve the accuracy of the temperature distribution of the substrate 100.

[0037] The photographing region 200 can be formed to have a first length 210L, and the first length 210L is smaller than the diameter of the substrate 100 with respect to the direction in which the substrate 100 rotates around the rotation axis 2a. The second length 220L perpendicular to the first length 210L of the photographing region 200 can be larger than the diameter of the substrate 100. Therefore, the region photographing unit 5 can obtain a thermal image including a part of the substrate 100. Therefore, the substrate processing apparatus 1 according to the present invention can obtain a plurality of thermal images, thereby obtaining the overall temperature distribution of the substrate 100. In Figure 4 In the figure, the photographing region 200 is shown as being formed in a rectangular shape, but is not limited thereto, and the photographing region 200 may also be other shapes such as an oval.

[0038] The region photographing unit 5 can be disposed outside the processing space. In this case, the region photographing unit 5 can obtain a thermal image including the processing space through the measurement hole 300 located in the photographing region 200. Therefore, the region photographing unit 5 can obtain a thermal image of the substrate 100 including a region that will pass under the measurement hole 300.

[0039] The measurement hole 300 may be formed in the gas injection unit 4. In this case, the area photography unit 5 may be disposed above the gas injection unit 4 at a position corresponding to the measurement hole 300. The measurement hole 300 may be formed in the purge gas injection module 43 in the gas injection unit 4. The measurement hole 300 may be formed to pass through the purge gas injection module 43. In this case, the measurement hole 300 may be spaced apart from the purge holes (not shown) for ejecting the purge gas in the purge gas injection module 43.

[0040] The measurement hole 300 may be formed in the cover member 3. In this case, the area photography unit 5 may be disposed above the cover member 3 at a position corresponding to the measurement hole 300. The measurement hole 300 may be formed to pass through the cover member 3. In this case, the measurement hole 300 may be formed in a portion of the cover member 3 where the gas injection unit 4 is not provided.

[0041] The measurement hole 300 may be formed to have a size smaller than the photography area 200. Refer to Figure 4 , the length of the measurement hole 300 in the longitudinal direction may be formed to be smaller than the diameter of the substrate 100, and the length in the width direction may be larger than the diameter of the substrate 100. Herein, when the center of the substrate 100 is disposed relative to a circular rotation path rotating about the rotation axis 2a, the longitudinal direction may correspond to the tangential direction of the circular rotation path. The width direction is a direction perpendicular to the longitudinal direction. In Figure 4 , the measurement hole 300 is shown formed as a rectangle, but is not limited thereto, and the measurement hole 300 may also be formed in other shapes such as an ellipse.

[0042] Refer to FIG. Figure 7 , the calculation unit 6 calculates the temperature data of the substrate 100 from the thermal image. In the thermal image, the temperature of each point of the substrate may be displayed in a color corresponding to the temperature. The temperature based on the color may be stored in advance in the calculation unit 6 in the form of a look-up table. By matching such stored data with the thermal image, the calculation unit 6 can calculate the temperature data of the point temperature of the substrate.

[0043] The calculation unit 6 may include an extraction module 61 and a calculation module 62.

[0044] The extraction module 61 extracts a segment of candidate data to obtain the temperature data. The extraction module 61 may extract first candidate data (shown in (a) of Figure 6 ) of the point temperature of the substrate corresponding to the first measurement line ML1 (shown in Figure 7 ) from the thermal image, and may extract second candidate data (shown in Figure 6 ) of the point temperature of the substrate corresponding to the second measurement line ML2 (shown in Figure 7(b)). The first measurement line ML1 and the second measurement line ML2 can be arranged parallel to each other. In the case where there is a measurement hole 300, the first measurement line ML1 and the second measurement line ML2 can be arranged parallel to the width direction of the measurement hole 300. In this case, the first measurement line ML1 and the second measurement line ML2 can be arranged spaced apart from each other in the longitudinal direction of the measurement hole 300. In Figure 7 the graph of the first candidate data of (a) and Figure 7 the graph of the second candidate data of (b), the horizontal axis of each graph can correspond to the length of the substrate 100 passing through the imaging area 200. As described above, each of the first candidate data and the second candidate data can include the point temperature of the substrate 100.

[0045] The acquisition module 61 can determine the interval between the first measurement line ML1 and the second measurement line ML2 based on the separation distance between the substrate 100 and the area imaging unit 5. The separation distance between the substrate 100 and the area imaging unit 5 can correspond to the height of the area imaging unit 5 relative to the substrate 100. For example, the acquisition module 61 can determine the interval between the first measurement line ML1 and the second measurement line ML2 as the interval between the pixels of the area imaging unit 5 corresponding to the separation distance between the substrate 100 and the area imaging unit 5. Therefore, the substrate processing apparatus 1 according to the present invention can set the first candidate data based on the first measurement line ML1 and set the second candidate data based on the second measurement line ML2 to correspond to the position closest to the substrate 100. Therefore, in the case where the point of the abnormal temperature measurement is located in a segment of the candidate data of the first candidate data and the second candidate data, even if the temperature of the corresponding point is corrected by referring to a segment of other candidate data, the substrate processing apparatus 1 according to the present invention can ensure temperature data sufficient to confirm the temperature distribution of the substrate 100. For example, the acquisition module 61 can acquire the first candidate data and the second candidate data by using the first measurement line ML1 and the second measurement line ML2 spaced 0.3 mm apart from each other. In this case, the separation distance between the substrate 100 and the area imaging unit 5 can be 300 mm, the area imaging unit 5 can obtain a thermal image with a resolution of 640×480, and the interval between the pixels of the area imaging unit 5 can be 0.3 mm.

[0046] The acquisition module 61 can acquire a part of the thermal image other than the part corresponding to below the preset temperature as the substrate part SA (such as Figure 6as shown), and the first candidate data and the second candidate data can be captured by using the first measurement line ML1 and the second measurement line ML2 with respect to the captured substrate portion SA. The preset temperature can be preset by the operator. In the case where the measurement hole 300 is provided, the portion corresponding to the preset temperature or lower can be the gas injection unit 4 or the cover 3. The corresponding portion may have an excessively low temperature, lower than the temperature of the area of the substrate 100 passing under the measurement hole 300, and thus the extraction module 61 can capture the substrate portion SA by using the preset temperature. Therefore, the substrate processing apparatus 1 according to the present invention can capture the position of the substrate 100 from the thermal image, and then can capture the first candidate data and the second candidate data, thereby improving the accuracy of the operation of obtaining the temperature distribution of the substrate 100. Moreover, in the substrate processing apparatus 1 according to the present invention, the allowable error range of the alignment operation of the area photographing unit 5 with respect to the position of the substrate 100 can be further increased, so that the time taken for the alignment operation of the area photographing unit 5 can be shortened.

[0047] The calculation module 62 can calculate the temperature data of the point temperature of the substrate included in the thermal image by using the first candidate data and the second candidate data. The first candidate data and the second candidate data are provided from the capture module 61 via wired communication, wireless communication, or the like.

[0048] The calculation module 62 can determine the points exceeding the preset reference temperature ST in a segment of the candidate data of the first candidate data and the second candidate data as the temperature of a segment of the other candidate data, thereby calculating the temperature data. The reference temperature ST can be considered to be abnormally higher than the noise, and thus can be preset by the operator. For example, the calculation module 62 can exclude the point temperatures in the first interval T1 exceeding the reference temperature ST in the first candidate data shown in Figure 7 FIG. A, and can determine the point temperatures in the second interval T2 corresponding to the first interval in the second candidate data shown in Figure 7 FIG. B as the point temperatures of the corresponding intervals. Therefore, the substrate processing apparatus 1 according to the present invention can prevent the accuracy of the temperature data from being reduced due to noise.

[0049] The calculation module 62 can determine the points equal to or less than the reference temperature ST in all the candidate data of the first candidate data and the second candidate data as the average temperature of the temperature of the first candidate data and the temperature of the second candidate data, thereby calculating the temperature data. For example, the calculation module 62 can determine the average temperature of excluding the point temperatures in the interval of the first interval T1 in the first candidate data shown in Figure 7 FIG. A and excluding the point temperatures in the interval of the second interval T2 in the second candidate data shown in Figure 7 FIG. B.

[0050] As described above, the calculation module 62 can determine a point exceeding the reference temperature ST in a segment of the candidate data in the first candidate data and the second candidate data as the temperature of a segment of other candidate data, and can determine a point equal to or less than the reference temperature ST in all of the first candidate data and the second candidate data as the average temperature of the temperature of the first candidate data and the temperature of the second candidate data, thereby calculating temperature data. Therefore, the substrate processing apparatus 1 according to the present invention can further improve the accuracy of the temperature data. When a point exceeding the reference temperature ST occurs in all of the candidate data of the first candidate data and the second candidate data, the calculation module 62 can send a warning to the operator.

[0051] Referring to FIG. Figure 7 , the calculation unit 6 may include a generation module 63 and a conversion module 64.

[0052] The generation module 63 generates an elliptical detection image representing the temperature distribution of the substrate 100 by using a plurality of temperature data. As Figure 4 shown, the substrate 100 passes through the imaging area 200 by rotation, so the area imaging unit 5 obtains a thermal image including a part of the substrate 100, and thus the calculation unit 6 can calculate the temperature data of each thermal image by using the acquisition module 61 and the calculation module 62. By collecting segments of the temperature data calculated in this way, the generation module 63 can generate an elliptical detection image. The reason for generating an elliptical detection image even when the substrate 100 is circular is that in the process of the substrate 100 rotating around the rotation axis 2a to obtain a thermal image, the outer portion of the substrate 100 disposed at a position opposite to the rotation axis 2a moves a greater distance than the inner portion of the substrate 100 disposed near the rotation axis 2a. The segment of the temperature data can be provided to the generation module 63 from the calculation module 62 via wired communication, wireless communication, or the like.

[0053] The generation module 63 can generate an elliptical detection image representing the temperature distribution corresponding to one rotation of the substrate by using the rotation rate of the substrate support unit 2 for calculating the segment of the temperature data and the imaging time of the thermal image. Therefore, in the case of calculating segments of temperature data by supporting a plurality of substrates 100 on the substrate support unit 2 and rotating the substrates 100 360 degrees multiple times around the rotation axis 2a, the generation module 63 can generate an elliptical detection image from the segments of the temperature data corresponding to the case where the same substrate 100 rotates the same number of times within the segments of the temperature data.

[0054] The conversion module 64 converts the elliptical detection image into a circular detection image corresponding to the substrate 100. Accordingly, the operator can confirm the temperature distribution of the substrate 100 by using the temperature distribution displayed in the circular detection image with temperature color differentiation. Accordingly, the substrate processing apparatus 1 according to the present invention can provide the circular detection image corresponding to the substrate 100 to the operator, thereby enhancing the ease of operation of confirming the temperature distribution of the substrate 100. Although not shown, the conversion module 64 can provide the circular detection image to a display device (not shown). The elliptical detection image can be provided to the conversion module 64 from the generation module 63 via wired communication, wireless communication, or the like.

[0055] The conversion module 64 can calculate the coordinates of the points of the substrate 100 by using the rotation rate of the substrate support unit 2 and the distances from the rotation axis 2a of the substrate support unit 2 to the respective points of the substrate 100, and then can convert the elliptical detection image into a circular detection image based on the calculated coordinates. As the rotation rate of the substrate support unit 2 increases, the substrate support unit 2 moves a greater distance, and at points farther from the rotation axis 2a, the substrate support unit 2 moves a relatively greater distance, and thus the conversion module 64 calculates the coordinates of the points of the substrate 100 by using the rotation rate of the substrate support unit 2 and the distances from the rotation axis 2a to the respective points of the substrate 100. In this case, the coordinates of the points of the substrate 100 can correspond to the absolute coordinates with respect to the actual substrate 100. When calculating the coordinates of the points of the substrate 100, the conversion module 64 can move the temperatures of the points of the substrate 100 based on the absolute coordinates to convert the elliptical detection image into a circular detection image.

[0056] Referring to FIG. Figure 7 , the substrate processing apparatus 1 according to the present invention can be implemented under the process conditions of the processing process to reflect the temperature data calculated by the calculation unit 6. In this case, the substrate processing apparatus 1 according to the present invention can include a temperature control unit 7.

[0057] The temperature control unit 7 controls the temperature of the substrate 100 supported on the substrate support unit 2. The temperature control unit 7 can control the temperature of the substrate support unit 2, and thus can control the temperature of the substrate 100 by using the substrate support unit 2. In this case, the temperature control unit 7 can be installed in the substrate support unit 2. Although not shown, the temperature control unit 7 can be implemented to control the temperature of the substrate 100 by using electricity. In this case, the temperature control unit 7 can be an electric heater. Although not shown, the temperature control unit 7 can control the temperature of the substrate 100 by using a temperature control fluid. In this case, the temperature control unit 7 can include: a pipeline installed in the substrate support unit 2, a pump for supplying the temperature control fluid to the pipeline, and a control unit for controlling the temperature of the temperature control fluid supplied to the pipeline by the pump.

[0058] The temperature control unit 7 can control the temperature of the substrate 100 supported by the substrate support unit 2 to a preset processing temperature by using the temperature data calculated by the calculation unit 6. The preset processing temperature can vary based on the type of the processing process, the type of the substrate 100, and the type of the thin film, and can be preset by the operator.

[0059] The gas injection unit 4 can stop the injection of the gas of the substrate support unit 2 by using the temperature data calculated by the calculation unit 6 until the temperature of the substrate 100 supported by the substrate support unit 2 is controlled to the processing temperature. When it is confirmed that the temperature of the substrate 100 supported by the substrate support unit 2 is controlled to the processing temperature by using the temperature data calculated by the calculation unit 6, the gas injection unit 4 can start injecting the gas toward the substrate support unit 2. Therefore, the substrate processing apparatus 1 according to the present invention can improve the quality uniformity of the substrate on which the processing process has been completed.

[0060] The present invention as described above is not limited to the above-described embodiments and the accompanying drawings, and it will be clearly understood by those skilled in the art that various modifications, deformations, and substitutions can be made without departing from the scope and spirit of the present invention.

Claims

1. An apparatus for processing a substrate, the apparatus comprising: a chamber providing a processing space; a cover covering an upper portion of the chamber; a substrate support unit supporting at least one substrate and rotatable about a rotation axis to pass the substrate through a photographing area; a gas injection unit injecting a processing gas toward the substrate support unit; a region photographing unit photographing the photographing area to obtain a thermal image of the photographing area; and a calculation unit calculating temperature data of the substrate from the thermal image, wherein the calculation unit includes: an extraction module extracting first candidate data of point temperatures of the substrate corresponding to a first measurement line from the thermal image, and extracting second candidate data of point temperatures of the substrate corresponding to a second measurement line parallel to the first measurement line from the thermal image; and a calculation module calculating temperature data of point temperatures of the substrate included in the thermal image by using the first candidate data and the second candidate data.

2. The apparatus according to claim 1, wherein a measurement hole is provided in the cover in the photographing area, and the region photographing unit is provided above the cover and obtains the thermal image by using the measurement hole, the thermal image including the substrate passing through an area below the measurement hole.

3. The apparatus according to claim 1, wherein a measurement hole is provided in the gas injection unit in the photographing area, and the region photographing unit is provided above the gas injection unit and obtains the thermal image by using the measurement hole, the thermal image including the substrate passing through an area below the measurement hole.

4. The apparatus according to claim 1, wherein when the point temperatures of a first section in the first candidate data exceed a reference temperature and the point temperatures of a second section corresponding to the first section in the second candidate data are equal to or less than the reference temperature, the calculation module determines the point temperatures of the second section as the point temperatures of the corresponding section, and when the point temperatures of the first section and the second section are both equal to or less than the reference temperature, the calculation module determines an average temperature of the point temperatures of the first section and the second section as the point temperatures of the corresponding section.

5. The apparatus according to claim 1, wherein the extraction module determines an interval between the first measurement line and the second measurement line based on a separation distance between the substrate and the region photographing unit.

6. The apparatus according to claim 1, wherein the extraction module extracts the first candidate data and the second candidate data through the first measurement line and the second measurement line separated from each other at an interval of 0.3 mm.

7. The apparatus according to claim 1, wherein the extraction module extracts a portion of the thermal image other than a portion corresponding to a preset temperature or lower as a substrate portion, and extracts the first candidate data and the second candidate data corresponding to the extracted substrate portion.

8. The substrate processing apparatus according to claim 1, wherein the calculation unit includes: A generation module that generates an elliptical detection image representing the temperature distribution of the substrate by using a plurality of temperature data; and A conversion module that converts the elliptical detection image into a circular detection image corresponding to the substrate.

9. The apparatus according to claim 8, wherein the generation module generates the elliptical detection image representing the temperature distribution corresponding to one rotation of the substrate by using the rotation rate of the substrate support unit for calculating the segments of the temperature data and the photographing time of the thermal image, and the conversion module calculates the coordinates of the points on the substrate by using the rotation rate of the substrate support unit and the distance of each point on the substrate from the rotation axis of the substrate support unit, and then converts the elliptical detection image into the circular detection image based on the calculated coordinates.

10. The apparatus according to claim 1, wherein the substrate processing apparatus further comprises a temperature control unit for controlling the temperature of the substrate supported on the substrate support unit, wherein the temperature control unit controls the temperature of the substrate by using the temperature data calculated by the calculation unit.

11. The apparatus according to claim 1, wherein the gas injection unit stops the injection of the gas of the substrate support unit by using the temperature data calculated by the calculation unit until the temperature of the substrate supported by the substrate support unit is controlled to a preset processing temperature.

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