Substrate support and substrate processing apparatus provided with such support

Abstract

The present invention relates to a substrate processing apparatus, and more particularly to a substrate processing apparatus for performing etching, deposition, etc. on a substrate. The present invention discloses a substrate processing apparatus, characterized in that it includes: a process chamber that forms a processing space for performing substrate processing on two externally introduced rectangular substrates, and a substrate support bracket provided in the process chamber to support the two rectangular substrates.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus (Substrate supporting module and substrate processing apparatus having the same), and more particularly to a substrate support for performing substrate processing such as etching and deposition on a substrate, and a substrate processing apparatus provided with such a support. Background Art

[0002] Generally, a substrate processing apparatus includes: a process chamber that forms a processing space for substrate processing; and a substrate support that is disposed inside the process chamber to support the substrate.

[0003] In addition, the substrate processing apparatus is provided with a gas supply unit such as a shower head, a pressure control, and an exhaust system for exhausting gas, according to the type and method of substrate processing.

[0004] Further, when the substrate processing state is to perform substrate processing under process pressure, an electrostatic chuck is provided to adsorb and fix the substrate by electrostatic force.

[0005] The substrate processing apparatus having the above structure is based on substrate processing of generations 6, 7, 8, etc., and its size increases according to the size of the substrate. Generally, according to the increased substrate specifications, the size, method, etc. are optimized.

[0006] However, as described above, the substrate processing apparatus optimized for each size cannot be applied to substrates of different specifications, that is, substrates of different sizes. In order to process substrates of different sizes, it is necessary to reset its size to achieve an optimized substrate processing apparatus, which results in the problem of additional investment costs. Summary of the Invention

[0007] (Problems to be Solved)

[0008] An object of the present invention is to provide a substrate processing apparatus for mounting two rectangular substrates in order to perform substrate processing.

[0009] (Means for Solving the Problems)

[0010] The present invention is created to achieve the above object of the present invention, and discloses a substrate processing apparatus, which includes: a process chamber that forms a processing space for performing substrate processing on two rectangular substrates introduced from the outside, and a substrate support that is disposed in the process chamber to support the two rectangular substrates.

[0011] The substrate support includes: an electrostatic chuck on which the substrate is mounted; one or more outer contour sealing members detachably provided along the edge of the electrostatic chuck; and one or more central sealing members provided on the upper portion of the electrostatic chuck between the two rectangular substrates, thereby connecting the outer contour sealing members to define a pair of support regions for respectively supporting the two rectangular substrates.

[0012] The electrostatic chuck includes: a base material made of a metal material, a first insulating layer formed by thermal spraying on the base material, a conductor layer formed on the first insulating layer, connected to a DC power supply to apply power to generate an electrostatic force, and a second insulating layer formed by thermal spraying on the conductor layer.

[0013] The base material faces the central sealing member, and a bottom groove is formed on its upper portion.

[0014] An insulating layer is formed on the surface of the bottom groove, and finally an insertion groove into which the central sealing member can be inserted is formed.

[0015] The inner side surface of the bottom groove and the upper surface of the base material are inclined, and the width decreases from the upper side to the lower side.

[0016] Among the inclination angles formed by the upper portion of the base material and the inner side surface of the bottom groove, the obtuse angle is inversely proportional to the depth of the bottom groove.

[0017] The base material is made of aluminum or aluminum alloy, is anodized before forming the first insulating layer, and the inner side surface of the bottom groove is perpendicular to the upper portion of the base material.

[0018] Each support region includes: a plurality of protruding portions protruding to fill the electrothermal gas between the bottom of the substrate and the upper portion of the electrostatic chuck; and a base for supporting the bottom edge of the substrate to prevent the electrothermal gas from leaking to the outside.

[0019] The upper portion of the central sealing member is at the same height as or lower than the base.

[0020] The central sealing member is located between the bases, and the bases correspond to the opposite inner sides of the rectangular substrate.

[0021] Each support region independently controls the supply of the electrothermal gas.

[0022] At least a part of the central sealing member and the outer contour sealing member are formed integrally.

[0023] At least a part of the central sealing member and the outer contour sealing member overlap each other.

[0024] The substrate processing apparatus further includes a lifting rod assembly disposed in the process chamber and including a plurality of lifting rods for passing through the substrate support to move up and down.

[0025] The lifting rod assembly includes: a central lifting rod lifting part disposed along the central part of the substrate support which is the opposite boundary part of the two rectangular substrates, and simultaneously supporting the bottom surfaces of the two adjacent rectangular substrates by the lifting drive of a single drive source. The central lifting rod lifting part includes: a sealing member having a sealing tool and disposed on a through hole of the process chamber; a lifting rod passing through the sealing member and driven to lift by the drive source coupled to one end thereof; a lifting rod support part coupled to the other end of the lifting rod and simultaneously supporting the pair of central lifting rods; and a telescopic part hermetically connecting the space between the sealing member and the lifting rod support part and capable of telescoping up and down.

[0026] The central lifting rod lifting part includes: a sealing member having a sealing tool and disposed on a through hole of the process chamber; a lifting rod passing through the sealing member and driven to lift by the drive source coupled to one end thereof; a main support part coupled to the other end of the lifting rod; a pair of lifting rod support parts disposed above the main support part and capable of moving up and down, and respectively supporting the pair of central lifting rods at the upper part; a pair of height adjusting rods protruding downward from the sealing member and respectively coupled to the lifting rod support parts while passing through the main support part, and adjusting the height of each of the pair of central lifting rod support parts by lifting; a telescopic part hermetically connecting the space between the sealing member and the main support part and capable of telescoping; and an auxiliary telescopic part hermetically connecting the space between the lifting rod support part and the main support part and capable of telescoping up and down.

[0027] The central lifting rod lifting part includes: a sealing member having a sealing tool and disposed on a through hole of the process chamber; a pair of lifting rods passing through the sealing member and driven to lift by the drive source coupled to one end thereof; a rod support part supporting one end of the pair of lifting rods protruding downward from the sealing member and driven to lift by the drive source; a lifting rod support part respectively coupled to the other ends of the pair of lifting rods and simultaneously supporting the pair of central lifting rods; and a telescopic part hermetically connecting the space between the sealing member and the lifting rod support part and capable of telescoping up and down.

[0028] The central lifting rod lifting part includes: a sealing member, which has a sealing tool and is provided on the through hole of the process chamber; a pair of lifting rods, which penetrate the sealing member and are driven to lift by the driving source combined at one end; a rod support part, which supports one end of the pair of lifting rods protruding downward from the sealing member and is driven to lift by the driving source; a pair of lifting rod support parts, which are respectively combined with the other ends of the pair of lifting rods and support the pair of central lifting rods at the upper part respectively; and a telescopic part, which hermetically connects the space between the sealing member and the lifting rod support part and can be telescopically extended and retracted up and down.

[0029] The pair of telescopic parts includes: flange parts, which respectively expand radially from the parts combined with the sealing member.

[0030] The flange parts of the telescopic part are arranged to overlap vertically with the flange parts of the adjacent telescopic part.

[0031] The telescopic part includes: a plurality of telescopic members, which are arranged in the vertical direction and the length in the vertical direction thereof is variable; and an intermediate member, which is arranged between the plurality of telescopic members and connects the telescopic members located on the upper side and the lower side vertically.

[0032] The pair of central lifting rods are arranged on the lifting rod support part and can finely adjust the vertical height.

[0033] (Advantages of the invention)

[0034] According to the substrate support frame of the present invention and the substrate processing apparatus provided with the same, based on the structure of a substrate processing apparatus for processing before dividing into two substrates, a substrate support frame capable of supporting two rectangular substrates separated into two is provided. Thus, by making a simple deformation of the substrate processing apparatus for processing before dividing into two substrates, there is an advantage that the substrate processing of two rectangular substrates separated into two can be performed at one time.

[0035] In particular, according to the substrate support frame of the present invention and the substrate processing apparatus provided with the same, based on the structure of a substrate processing apparatus for processing before dividing into two substrates, a substrate support frame corresponding to two rectangular substrates separated into two and provided with a first electrostatic chuck and a second electrostatic chuck is included. Thus, by making a simple deformation of the substrate processing apparatus for processing before dividing into two substrates, there is an advantage that the substrate processing of two rectangular substrates separated into two can be performed at one time.

[0036] Moreover, the substrate support and the substrate processing apparatus provided therewith according to the present invention are based on the structure of a substrate processing apparatus that processes substrates before they are divided into two. A central sealing member for protecting the electrostatic chuck is additionally provided at a position between the two divided rectangular substrates. Thus, by making a simple modification to the substrate processing apparatus that processes substrates before they are divided into two, it has the advantage of being able to process two divided rectangular substrates at once.

[0037] In particular, the substrate support and the substrate processing apparatus provided therewith according to the present invention can process two divided rectangular substrates at once by making a simple modification to the substrate processing apparatus that processes substrates before they are divided into two. This maximizes the reuse of existing equipment and has the advantage of minimizing not only the division of the target substrate but also the additional equipment investment cost for processing the divided substrates.

[0038] Moreover, the substrate support and the substrate processing apparatus provided therewith according to the present invention are based on the structure of a substrate processing apparatus that processes substrates before they are divided into two. A central sealing member for protecting the electrostatic chuck is additionally provided at a position between the two divided rectangular substrates. A bottom groove is formed on the base material for the central sealing member, and an insulating layer is formed on its surface, and finally an insertion groove is formed to facilitate the insertion and setting of the central sealing member.

[0039] Moreover, based on the formation of an insulating layer on the surface of the bottom groove with an inclined inner side surface, when the insulating layer is formed by thermal injection, it covers the entire surface of the base material, having the effect of preventing the surface of the base material from being exposed to the outside.

[0040] Moreover, the substrate processing apparatus according to the present invention is based on the structure of a substrate processing apparatus that processes substrates before they are divided into two. The substrate support that can support two divided rectangular substrates and a pair of central lifting rods that simultaneously support the edges of the two substrates between the two substrates are moved up and down. Thus, by making a simple modification to the substrate processing apparatus that processes substrates before they are divided into two, it has the advantage of being able to process two divided rectangular substrates at once.

[0041] In particular, by moving two rectangular substrates up and down by a pair of central lifting rods that simultaneously support the two rectangular substrates respectively, the interference between the lifting rod combination components for up and down driving is minimized, and thus it has the advantage of being able to minimize the distance between the two rectangular substrates.

[0042] Specifically, the present invention supports a pair of central lifting rods that simultaneously support two rectangular substrates as a single component, and drives the component that supports the pair of central lifting rods to move up and down, thereby minimizing the distance between the two substrates, especially the distance between the lifting rods, and thus having the advantage of minimizing the overall size of the process chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] Figure 1 is a plan view showing a substrate processing apparatus according to the present invention.

[0044] Figure 2 is Figure 1 a cross-sectional view of the substrate processing apparatus taken along the line II-II.

[0045] Figure 3 is Figure 1 a partial cross-sectional view of the substrate processing apparatus taken along the line III-III.

[0046] Figure 4 is an enlarged view showing Figure 2 a portion where an outer contour sealing member and a central sealing member are provided in.

[0047] Figure 5 is a cross-sectional view showing an example of a modified electrostatic chuck provided in Figure 1 the substrate processing apparatus.

[0048] Figures 6a to 6d is a cross-sectional view showing an example of a base material of a substrate support frame for Figure 1 the substrate processing apparatus.

[0049] Figure 7 is a cross-sectional view showing Figure 1 a portion of a central lifting rod lifting part in the substrate processing apparatus.

[0050] Figure 8a is a cross-sectional view showing Figure 7 a modified example of the central lifting rod lifting part of.

[0051] Figure 8b is a cross-sectional view showing Figure 8a a plan view of an adjustment plate structure in.

[0052] Figure 9 is a cross-sectional view showing Figure 7 another modified example of the central lifting rod lifting part of.

[0053] Figure 10 is a cross-sectional view showing Figure 7 yet another modified example of the central lifting rod lifting part of.

[0054] (Description of Reference Numerals)

[0055] 10: Substrate 100: Substrate processing apparatus

[0056] 130: Substrate support 200: Electrostatic chuck

[0057] 270: Central seal member Detailed implementation manners

[0058] Hereinafter, a substrate support according to the present invention and a substrate processing apparatus provided with the same will be described in detail with reference to the accompanying drawings. As a reference, Figures 1 to 10 it is illustrated for explaining the present invention, and it is natural that there are some structures that are exaggerated or different compared with the actual situation in part.

[0059] First of all, the gist of the present invention is to provide a substrate processing apparatus that can perform splitting two rectangular substrates of two sizes at one time.

[0060] In particular, based on the processing of two rectangular substrates (preferably, having the same size), the structure of the substrate support for supporting the two substrates is crucial.

[0061] According to the substrate processing apparatus of the present invention, based on the structure of the substrate support, the structure of the substrate support can be deformed, and two substrates can be stably adsorbed and fixed by one electrostatic chuck.

[0062] Hereinafter, an embodiment of stably adsorbing and fixing two substrates by one electrostatic chuck will be described as an example.

[0063] According to the substrate processing apparatus of the present invention, as Figure 1 and Figure 2 shown, it includes: a process chamber 100 that forms a processing space S for performing substrate processing on two rectangular substrates 10 introduced from the outside, and a substrate support 130 provided in the process chamber 100 to support the two rectangular substrates 10.

[0064] Here, the substrate processing can be various processes such as a deposition process of forming a thin film on the substrate surface, an etching process of performing etching, etc.

[0065] Moreover, the substrate to be processed can be any substrate to be processed such as an LCD board substrate, an OLED substrate, etc. for etching, deposition, etc.

[0066] The process chamber 100 includes: a chamber main body 110 that is detachably combined to form a processing space S, and an upper cover 120.

[0067] The chamber main body 110 can have various structures according to the design, and at least one gate 111 is formed, which is opened and closed by a gate valve (not shown) so that the substrate 10 can be loaded.

[0068] In addition, the process chamber 100 is equipped with a gas supply unit 140, a substrate support 130, an exhaust pipe (not shown), etc., which are devices for performing vacuum treatment processes. The gas supply unit 140 injects the process gas received from a gas supply device (not shown) into the processing space S. The substrate support 130 places the substrate 10, and the exhaust pipe (not shown) is connected to an exhaust system for pressure regulation and exhaust in the processing space S.

[0069] The substrate support 130 is provided with a lower electrode (not shown) to which power is applied, so as to generate a reaction such as plasma for performing the process in the processing space (S) in a vacuum treatment like this.

[0070] Here, depending on the way the power is applied to the lower electrode, the chamber body 110 and the gas supply unit 140 can be grounded and one or two RF powers can be applied, or the lower electrode can be grounded and RF power can be applied to the chamber body 110 and the gas supply unit 140, or a first RF power can be applied to the lower electrode and a second RF power can be applied to the chamber body 110 and the gas supply unit 140, etc., and there are various ways to apply the power.

[0071] Moreover, the substrate support 130 further includes: a cooling plate, which is combined below an electrostatic chuck 200 to be described later, so as to form a flow path through which an electrothermal fluid for controlling the temperature can flow, in order to increase the temperature for substrate processing using plasma or cool the heat generated during the processing operation.

[0072] Furthermore, the substrate support 130 is additionally provided with an insulating plate (not shown). The chamber body 110 is grounded, and it is located between the electrostatic chuck 200 and the chamber body 110 to insulate the electrostatic chuck 200 from the chamber body 110.

[0073] Preferably, if the insulating plate is provided with a cooling plate (not shown), it is combined below the cooling plate.

[0074] Moreover, the substrate support 130 further includes: a bottom plate portion (not shown), which is combined below the insulating plate and is supported by a plurality of flanges 160 provided on the bottom surface of the chamber body 110.

[0075] Moreover, the substrate support 130 is illustrated as being fixed within the process chamber 100. It is arranged within the process chamber 100 and can move up and down.

[0076] And, as Figures 1 to 4As shown, the substrate support 130 includes: an electrostatic chuck 200 that adsorbs and fixes the substrate 10 using electrostatic force; one or more outer contour sealing members 250 that are detachably provided along the edge of the electrostatic chuck 200 to form a rectangular shape; and one or more central sealing members 270 that are provided on the upper part of the electrostatic chuck between the two rectangular substrates to connect the outer contour sealing members 250, thereby dividing into a pair of support regions A1 and A2 to support the two rectangular substrates 10 respectively.

[0077] As Figures 2 to 4 shown, the electrostatic chuck 200 includes: a base material 210 having a rectangular planar shape and made of a metal material; a first insulating layer formed by thermal spraying on the base material 210; a conductor layer 230 formed on the first insulating layer 220 to connect a DC power supply to apply power to generate electrostatic force; and a second insulating layer 240 formed by thermal spraying on the conductor layer 230.

[0078] The base material 210 can use a metal material such as aluminum, aluminum alloy, Ti, stainless steel (SUS or STS), etc., so that while its planar shape forms a rectangle, the base material is grounded or an RF power supply is applied to make the lower electrode of the power supply application part function.

[0079] Moreover, the base material 210 faces the central sealing member 270 and has a bottom groove 217 formed on its upper part.

[0080] The bottom groove 217 is formed to finally form an insertion groove 247 into which the central sealing member 270 can be inserted. After forming the insulating layer, considering the size of the insertion groove 247 for inserting the central sealing member 270, its cross-sectional shape and depth are determined.

[0081] In addition, when forming at least one of the first insulating layer 220 and the second insulating layer 240 in the bottom groove 217, or an insulating layer can be formed separately, as Figures 2 to 4 、 Figures 6a to 6d shown, considering that the insulating layer is coated by thermal spraying, preferably, the inner side surface forms an inclination with the upper part of the base material 210 to form an inclined surface 218, so that the width from the upper side to the lower side decreases.

[0082] In particular, as Figures 6a to 6d shown, preferably, among the inclination angles formed by the upper part of the base material 210 and the inner side surface of the bottom groove 217, the obtuse angle θ is inversely proportional to the depth H of the bottom groove 217.

[0083] In addition, Figures 5 to 6d For convenience, the illustration of the lifting rod assembly described later is omitted.

[0084] As described above, when the insulating layer is formed on the inner circumferential surface of the bottom groove 217 by plasma thermal spraying, if the depth is relatively low, the thickness of the formed insulating layer is relatively thin. Among the inclination angles formed by the upper part of the base material 210 and the inner side surface of the bottom groove 217, since only the obtuse angle θ is inversely proportional to the depth H of the bottom groove 217, the insulating layer can be smoothly formed on the inner circumferential surface of the bottom groove 217.

[0085] In addition, when the base material 210 is made of stainless steel (SUS or STS), considering thermal expansion, preferably, the central sealing member 270 is made of ceramic material.

[0086] Here, when the base material 210 is aluminum or aluminum alloy, the central sealing member 270 can be made of aluminum or aluminum alloy material, ceramic material, etc.

[0087] Moreover, when the base material 210 is made of aluminum material or aluminum alloy material, an anodic oxidation treatment is performed before forming the first insulating layer 220. In addition to forming an inclination with the upper part of the base material 210, the inner side surface of the bottom groove 217, as Figure 5 and Figure 6a shown, can also form a vertical relationship.

[0088] The first insulating layer 220 and the second insulating layer 240 can use various materials to have a specified permittivity in order to perform the function of an electrostatic chuck. Insulating materials such as Al 2 O 3 、ZrO 3 、AlN and Y 2 O 3 etc. can be used as ceramic materials.

[0089] Here, the second insulating layer 240 forms a pair of support regions A1 and A2 to support two rectangular substrates 10 respectively.

[0090] Moreover, the second insulating layer 240 forming the pair of support regions A1 and A2 supports the substrate 10, and for temperature control, a plurality of protrusions 241 are formed to protrude between the bottom surface of the substrate 10 and the upper part of the electrostatic chuck 200, that is, the electrostatic chuck 200, to fill electrothermal gases such as helium He. In order to prevent the electrothermal gases from leaking to the outside, a base 242 for supporting the edge of the bottom surface of the substrate 10 can be formed.

[0091] In addition, on the bottom groove 217 formed on the base material 210, at least one of the first insulating layer 220 and the second insulating layer 240 or another insulating layer can be formed, and an insertion groove 247 for inserting the central sealing member 270 is formed on the upper part of the finally formed insulating layer.

[0092] The insertion groove 247 serves as a groove for inserting the central sealing member 270 and is formed in at least one of the first insulating layer 220 and the second insulating layer 240, and can be formed in various structures according to the design.

[0093] In particular, the insertion groove 247 is in the sub-micron unit considering the thickness of the first insulating layer 220, the second insulating layer 240, etc., and thus the position of the lower end of the central sealing member 270 is deeper than the position of the upper part of the base material 210.

[0094] As described above, if the insertion groove 247 makes the lower end of the central sealing member 270 deeper than the upper part of the base material 210, the intrusion of plasma during the process can be effectively prevented, etc., thereby preventing damage to the electrostatic chuck.

[0095] The conductor layer 230 is structured to connect to a DC power source and generate an electrostatic force together with the second insulating layer 240, and finally adsorb and fixedly install the substrate 10 on the second insulating layer 240. A conductive material such as tungsten W can be used.

[0096] Moreover, the conductor layer 230 can be divided into multiple parts to generate an electrostatic force quickly without generating a voltage difference.

[0097] In particular, the conductor layer 230 can be additionally formed on a pair of support regions (A1, A2), and a DC power source can be obtained through respective additional DC power sources or one DC power source.

[0098] Here, preferably, the DC power source applied to the conductor layer 230 can independently control each substrate 10.

[0099] Specifically, on the electrostatic chuck 200, the conductor layer 230 that generates an electrostatic force by applying a power source is additionally formed on a pair of support regions A1, A2 respectively or formed integrally.

[0100] That is, the conductor layer 230 can be formed in a predetermined pattern on the first insulating layer 220 except for the part opposite to the bottom groove 217.

[0101] Moreover, even based on the supply of the electrothermal gas, the supply of the electrothermal gas is additionally controlled or integrally controlled on a pair of support regions A1, A2.

[0102] The first insulating layer 220, the conductor layer 230, and the second insulating layer 240 can be formed by various methods. For example, they can be formed by plasma thermal spraying.

[0103] In addition, as Figures 1 to 4 shown, the electrostatic chuck 200 forms a step difference 202 at the edge so that the outer contour sealing member 250 can be stably set.

[0104] The outer contour sealing member 250 has a structure in which, with the substrate support frame 130, that is, in a state where the substrate 10 is mounted on the electrostatic chuck 200, the portion of the electrostatic chuck 200 that is exposed upward is protected by plasma. Preferably, it is made of an insulating material Al that is resistant to plasma. 2 O 3 、ZrO 3 、AlN and Y 2 O 3 and other ceramic materials such as, polycarbonate, polytetrafluoroethylene, etc.

[0105] Moreover, the outer contour sealing member 250 is composed of multiple components and can be used for a large-sized electrostatic chuck 200, and can form the same structure as that disclosed in Korean Patent Publication No. 10-2014-0060662.

[0106] In addition, as Figure 2 and Figure 3 shown, a side sealing member 280 is additionally provided on the side surface of the base material 210 to prevent the electrostatic chuck 200, the cooling plate, etc. from being damaged by plasma.

[0107] The side sealing member 280 is provided on the side surface of the base material 210 to prevent the electrostatic chuck 200 from being exposed to the outside. Preferably, it is made of an insulating material Al that is resistant to plasma. 2 O 3 、ZrO 3 、AlN and Y 2 O 3 and other ceramic materials such as, polycarbonate, polytetrafluoroethylene, etc.

[0108] The central sealing member 270 is a member that connects the outer contour sealing members 250 between two rectangular substrates 10, and can have various structures to divide a pair of support regions A1, A2 that respectively support the two rectangular substrates.

[0109] In particular, the central sealing member 270 is provided to divide a pair of support regions A1, A2 that respectively support the two rectangular substrates, and is the second insulating layer 240, that is, a structure for preventing the electrostatic chuck 200 from being exposed to plasma. Preferably, it is made of an insulating material Al that is resistant to plasma. 2 O 3 、ZrO 3 、AlN and Y 2 O 3 and other ceramic materials such as, polycarbonate, polytetrafluoroethylene, etc.

[0110] Moreover, at least a part of the central sealing member 270 is integrally formed with the outer contour sealing member 250.

[0111] Also, preferably, in order to prevent plasma from invading the electrostatic chuck 200 from the boundary portion with the outer sealing member 250, at least a part of the central sealing member 270 overlaps with the outer sealing member 250.

[0112] Also, preferably, the upper part of the central sealing member 270 is formed to be the same height as or lower than the base 242 so that the upper part of the base 242 can support the bottom surface of the substrate 10.

[0113] Also, preferably, the central sealing member 270 is located between the bases 242 on the opposite inner sides of the rectangular substrate 10.

[0114] Due to the additional provision of the central sealing member 270 having the above structure, based on the structure of a substrate processing apparatus for processing a substrate before dividing it into two substrates, by making a simple modification (electrostatic chuck alternation) to the substrate processing apparatus for processing a substrate before dividing it into two substrates, there is an advantage that two rectangular substrates 10 can be processed in one go.

[0115] In addition, in order to introduce or remove the substrate 10 into or from the process chamber 100 by a transfer robot or the like, the substrate processing apparatus is provided in the process chamber 100 and includes: a lift rod assembly including a plurality of lift rods 310 that can move up and down through the substrate support frame 130.

[0116] The lift rod assembly is a structure for lifting and lowering the substrate 10 by introducing and removing the substrate 10 by a transfer robot or the like. It is provided in the process chamber 100 and includes a plurality of lift rods 310 that can move up and down through the substrate support frame 130. If it is a structure that can drive the lift rods 310 up and down, it can be any structure.

[0117] As an example, the lift rod assembly has the same or a similar structure as that of Korean Patent Application Publication No. 10-2015-0114227 of the applicant.

[0118] In addition, according to the substrate processing apparatus of the present invention, lift rods 310 are arranged to move each substrate up and down as two substrates are introduced and substrate processing is performed.

[0119] However, since a plurality of lift rods are respectively arranged at the opposite edges in a state where two substrates are placed, there is interference between the lift rods supporting the adjacent substrate edges or between the structures for driving them up and down, which limits the approach of the two substrates to each other.

[0120] Here, when increasing the interval between two substrates, the size of the process chamber 100 also increases, resulting in an increase in the manufacturing cost of the process chamber 100, and there is a problem of thickening the thickness of the process chamber 100 in order to enable it to withstand the process pressure (specified vacuum pressure) corresponding to the relatively increased volume.

[0121] Therefore, it is necessary for the lifting rod assembly to minimize the interval between the central lifting rods that support the edges of the adjacent substrates.

[0122] Thus, preferably, the lifting rod assembly includes: a central lifting rod lifting part 300, which is arranged along the central part of the substrate support frame 130 at the opposite boundary parts of two straight rectangular substrates 10, and simultaneously supports the bottom surfaces of two adjacent straight rectangular substrates respectively through the lifting drive of a single drive source (not shown).

[0123] The drive source has a structure of driving a pair of lifting rods 310 up and down using one drive source, and according to the drive method, various structures such as a conveyor belt and a pulley block, a screw combination, etc. can be used.

[0124] In addition, in order to minimize the interval between the central lifting rods 310 that support the edges of the adjacent substrates, the structure of the central lifting rod lifting part 300 can be used in various embodiments.

[0125] Specifically, as a first embodiment, as Figure 7 shown, the central lifting rod lifting part 300 includes: a sealing member 360, which has a sealing tool 412 and is arranged on the through-hole 119 formed in the process chamber 100, and a lifting rod 330, which penetrates the sealing member 360 and is driven to lift through a drive source (not shown) combined at one end, and a lifting rod support part 320, which is combined at the other end of the lifting rod 330 and supports a pair of central lifting rods 310 simultaneously at the upper part, and a telescopic part 340, which hermetically connects the space between the sealing member 360 and the lifting rod support part 320 and can be telescoped up and down.

[0126] The sealing member 360 has a sealing tool 412 and is arranged on the through-hole 119 formed in the process chamber 100, so as to maintain the process pressure inside the process chamber 100. The structure has a sealing tool 412 similar to a sealing ring. For example, the process chamber 100 is combined with the bottom surface of the process chamber 100 where the through-hole 119 is formed.

[0127] The lifting rod 330 penetrates the sealing member 360 and is driven to lift through a drive source (not shown) combined at one end, and it can be of various structures.

[0128] The lifting rod support part 320 is configured to be coupled to the other end of the lifting rod 330 and support a pair of central lifting rods 310 at the upper part simultaneously. Any structure can be adopted as long as it can support a pair of central lifting rods 310 simultaneously.

[0129] Here, the pair of central lifting rods 310 can finely adjust the vertical height of the lifting rod support part 320.

[0130] The telescopic part 340 hermetically connects the space between the sealing member 360 and the lifting rod support part 320 and can be telescoped up and down. Various structures can be adopted for it.

[0131] The telescopic part 340 is structured to isolate the air pressure state outside the telescopic part 340 from the atmospheric pressure state inside. Any structure can be adopted as long as it is a telescopic member such as a bellows that can change its length in the vertical direction.

[0132] Moreover, for the arrangement of the telescopic part 340, it includes: a plurality of telescopic members 341, 342 arranged vertically so as to be able to change the vertical length, and an intermediate member 343 disposed between the plurality of telescopic members 341, 342 and connecting the upper and lower telescopic members 341, 342 vertically to have a stable structure.

[0133] The telescopic members 341, 342 are arranged in the vertical direction and structured to be able to change the vertical length. A bellows can be used.

[0134] Moreover, the intermediate member 343 is structured to be disposed between the plurality of telescopic members 341, 342 and connect the upper and lower telescopic members 341, 342 vertically, preventing the telescopic part 340 from being too long vertically and providing a stable arrangement for the telescopic part 340.

[0135] As a second embodiment, as an embodiment in which the central lifting rod lifting part 300 finely adjusts the vertical height of a pair of central lifting rods 310 on the lifting rod support part 320, as Figure 8a and 8bAs shown in the figure, it includes: a sealing member 360 having a sealing tool 412 disposed on a through hole 119 formed in a process chamber 100; a lifting rod 330 passing through the sealing member 360 and being driven to lift and lower by a driving source (not shown) coupled to one end; a main support portion 321 coupled to the other end of the lifting rod 330; a pair of lifting rod support portions 320 movable in the vertical direction above the main support portion 321 and respectively supporting a pair of central lifting rods 310 at the upper portions; a pair of height adjusting rods 375 respectively coupled to the pair of lifting rod support portions 320, passing through the main support portion 321 and the sealing member 360, and being capable of lifting and lowering while protruding downward from the sealing member 360 to respectively adjust the heights of the pair of central lifting rods 310; a telescopic portion 340 capable of hermetically connecting the space between the sealing member 360 and the main support portion 321 and being telescopically extendable and retractable in the vertical direction; and an auxiliary telescopic portion 372 capable of hermetically connecting the space between the lifting rod support portion 320 and the main support portion 321 and being telescopically extendable and retractable in the vertical direction.

[0136] The sealing member 360 has a structure with a sealing tool 412 and is disposed on the through hole 119 formed in the process chamber 100 for maintaining the process pressure inside the process chamber 100. The sealing tool 412 is similar to a sealing ring. For example, the process chamber 100 is coupled to the bottom surface of the process chamber 100 where the through hole 119 is formed.

[0137] The lifting rod 330 has a structure that passes through the sealing member 360 and is driven to lift and lower by a driving source (not shown) coupled to one end, and can be of various structures.

[0138] The main support portion 321 has a structure coupled to the other end of the lifting rod 330 and can be of various structures such as a plate member.

[0139] The pair of lifting rod support portions 320 are structures that respectively support a pair of central lifting rods 310 at the upper portions, are disposed above the main support portion 321 and are movable in the vertical direction. As long as they are structures that respectively support a pair of central lifting rods 310 at the upper portions, they can be any structure.

[0140] The pair of height adjusting rods 375 are respectively coupled to the pair of central lifting rod support portions 320, pass through the main support portion 321 and the sealing member 360, are capable of lifting and lowering, and have a structure that protrudes downward from the sealing member 360, and can be of various structures.

[0141] Here, the height adjusting rods 375 respectively adjust the heights of the pair of central lifting rods 310 through various methods and coupling structures.

[0142] As an example, the height adjusting rods 375 are screw-coupled to nut portions (not shown) provided on the main support portion 321, and thus move up and down by rotation.

[0143] By rotating the height adjustment lever 375 having the structure described above, the height adjustment lever 375 can move slightly up and down with respect to the main support portion 321, and can finely adjust the up and down heights of the pair of lifting levers 310, actively cooperating with the up and down height conditions of each central lifting lever 310 to constitute an optimal process environment.

[0144] As another example, as Figure 8a and Figure 8b shown, the height adjustment lever 375 is movably coupled to the fixing member 384 of the lifting lever 330 so as to be movable up and down and position-adjustable, and can finely adjust the up and down height of the central lifting lever 310.

[0145] The fixing member 384 penetrates the lifting lever 330 through the main through hole 384b, and can be fixed to the lifting lever 330 by various methods such as a fixing pin 386.

[0146] Further, the fixing member 384 is formed with a pair of auxiliary through holes 384a penetrating the height adjustment lever 375, and the height adjustment lever 375 is respectively inserted into the auxiliary through holes 384a.

[0147] Here, the height adjustment lever 375 is formed with a bolt portion, and is screwed to the upper and lower portions of the fixing member 384. By means of nuts 387 and 388 respectively provided at the upper and lower portions, the height adjustment lever 375 is moved up and down and position-fixed with respect to the fixing member 384.

[0148] Here, when the user needs to make a fine up and down movement of the height adjustment lever 375, the nuts 387 and 388 are rotated to make a fine up and down movement of the height adjustment lever 375 with respect to the fixing member 384, and then the nuts 387 and 388 are tightened again to fix the height adjustment lever 375 to the fixing member 384.

[0149] In addition, preferably, the height adjustment lever 375 needs to prevent rotation with respect to the fixing member 384, so that the cross-sectional shapes of the auxiliary through holes 384a and the corresponding portions of the height adjustment lever 375 are polygonal.

[0150] Here, in order to engage with the nut and form the nut portion, it is natural that a part of the cross-sectional shape of the height adjustment lever 375 is deformed.

[0151] The telescopic portion 340 has a structure that hermetically connects the space between the sealing member 360 and the main support portion 321 and can be telescopically moved up and down, and it can be of various structures.

[0152] The telescopic part 340 has a structure that isolates the outer process pressure state and the inner atmospheric pressure state of the telescopic part 340. If it is a telescopic component such as a bellows that can change its length in the vertical direction, it can be of any structure.

[0153] Moreover, for the setting of the telescopic part 340, it includes: a plurality of telescopic components 341, 342 that are arranged vertically so as to be able to change the vertical length, and an intermediate component 343 that is provided between the plurality of telescopic components 341, 342 and connects the upper and lower telescopic components 341, 342 vertically to have a stable structure.

[0154] The structure in which the telescopic components 341, 342 are arranged vertically so as to be able to change the vertical length can use a bellows or the like.

[0155] Furthermore, the structure in which the intermediate component 343 is provided between the plurality of telescopic components 341, 342 and connects the upper and lower telescopic components 341, 342 vertically can prevent the telescopic part 340 from being too long vertically and can constitute a stable setting of the telescopic part 340.

[0156] As a third embodiment, as Figure 9 shown, the central lifting rod lifting part 300 includes: a sealing component 360 that has a sealing tool 412 and is provided on a through hole 119 formed in the process chamber 100, and a pair of lifting rods 381 that penetrate the sealing component 360 and are driven to lift by a driving source (not shown) combined at one end, and a rod support part 331 that supports one end of the pair of lifting rods 381 protruding downward from the sealing component 360 and is driven to lift by a driving source, and a lifting rod support part 320 that is respectively combined at the other ends of the pair of lifting rods 381 and supports the pair of central lifting rods 310 at the upper part simultaneously, and a telescopic part 340 that can hermetically connect the space between the sealing component 360 and the lifting rod support part 320 and can perform vertical telescoping.

[0157] The sealing component 360, which has a sealing tool 412 and is provided on the through hole 119 formed in the process chamber 100, is a structure for maintaining the process pressure inside the process chamber 100. It has a sealing tool 412 similar to a sealing ring. For example, the process chamber 100 is combined with the bottom surface of the process chamber 100 where the through hole 119 is formed.

[0158] The lifting rod 381 has a structure that penetrates the sealing component 360 and is driven to lift by a driving source (not shown) combined at one end, and it can be of various structures.

[0159] In particular, the lifting rod 381 is different from that in the first embodiment in the setting in units of a pair. Preferably, in order to stably support the central lifting rod 310, it is provided on the axis of the lifting rod 310.

[0160] The rod support portion 331 may have various structures such as a plate, which supports one end of a pair of lifting rods 381 protruding from the lower side of the sealing member 360 and is driven up and down by a driving source.

[0161] Here, as shown in the figure, the structure of the rod support portion 331 is such that a driving support rod 333 driven up and down by a driving source is coupled to the lower part and can be driven up and down.

[0162] The lifting rod support portion 320 may have any structure as long as it is structured to be coupled to the other end of the lifting rod 330 and support a pair of central lifting rods 310 at the upper part.

[0163] Here, the pair of central lifting rods 310 can finely adjust the vertical height of the lifting rod support portion 320.

[0164] The telescopic portion 340 may have various structures, which hermetically connect the space between the sealing member 360 and the lifting rod support portion 320 and can be telescoped up and down.

[0165] The telescopic portion 340 may have any structure as long as it isolates the outside process pressure state and the inside atmospheric pressure state of the telescopic portion 340, and if it is a telescopic member such as a bellows that can change in length in the up and down directions.

[0166] Moreover, for the arrangement of the telescopic portion 340, it includes: a plurality of telescopic members 341, 342, which are arranged in the up and down direction and can change their up and down lengths, and an intermediate member 343, which is arranged between the plurality of telescopic members 341, 342 and connects the upper and lower telescopic members 341, 342 vertically.

[0167] The telescopic members 341, 342 may have a structure arranged in the up and down direction and can change their up and down lengths, and bellows etc. can be used.

[0168] Moreover, the intermediate member 343 may have a structure arranged between the plurality of telescopic members 341, 342 to vertically connect the upper and lower telescopic members 341, 342, and for preventing the telescopic portion 340 from being too long in the up and down direction, it can be for the stable arrangement of the telescopic portion 340.

[0169] As a fourth embodiment, as Figure 10As shown, the central lifting rod lifting part 300 includes: a sealing member 360 having a sealing tool 412, which is disposed on the through hole 119 formed in the process chamber 100; a pair of lifting rods 381 passing through the sealing member 360 and being lifted and driven by a driving source (not shown) coupled to one end; a rod support part 331 supporting one end of the pair of lifting rods 381 protruding from the lower side of the sealing member 360 and being lifted and driven by the driving source; a pair of lifting rod support parts 322 respectively coupled to the other ends of the pair of lifting rods 381 and respectively supporting a pair of central lifting rods 310 at the upper part; and a pair of telescopic parts 340 hermetically connecting the spaces between the sealing member 360 and the pair of lifting rod support parts 322 and being capable of telescoping up and down.

[0170] The sealing member 360 has a sealing tool 412 and is disposed on the through hole 119 formed in the process chamber 100, and is a structure for maintaining the process pressure inside the process chamber 100. With a sealing tool 412 similar to a sealing ring, for example, the process chamber 100 is coupled to the bottom surface of the process chamber 100 where the through hole 119 is formed.

[0171] The lifting rod 381 passes through the sealing member 360 and is lifted and driven by a driving source (not shown) coupled to one end, and can be of various structures.

[0172] In particular, the lifting rod 381 is characterized in that it is provided in pairs so as to respectively support a pair of central lifting rods 310. Preferably, in order to stably support the central lifting rods 310, it is provided on the axis of the central lifting rods 310.

[0173] The rod support part 331 supports one end of the pair of lifting rods 381 protruding from the lower side of the sealing member 360 and is a structure for being lifted and driven by the driving source, and can be of various structures such as a plate.

[0174] Here, as shown in the figure, the rod support part 331 is coupled to the lower side of the driving support rod 333 driven up and down by the driving source and can be driven up and down.

[0175] The lifting rod support part 322 is constituted in pairs and is respectively coupled to the other ends of the pair of lifting rods 381 and respectively supports a pair of central lifting rods 310 at the upper part.

[0176] Here, the pair of central lifting rods 310 can finely adjust the vertical height with respect to the lifting rod support part 322.

[0177] The pair of telescopic parts 340 hermetically connect the spaces between the sealing member 360 and the pair of lifting rod support parts 322 and are structures capable of telescoping up and down, and can be of various structures.

[0178] The telescopic part 340, as a structure that isolates the outer process pressure state and the inner atmospheric pressure state of the telescopic part 340, can be of any structure if it is a telescopic component such as a bellows that can change its length in the vertical direction.

[0179] Moreover, for the setting of the telescopic part 340, as described above, it includes: a plurality of telescopic components arranged in the vertical direction and capable of changing their vertical lengths, and an intermediate component provided between the plurality of telescopic components to connect the upper and lower telescopic components located on the upper and lower sides.

[0180] For the structure where the telescopic components are arranged vertically and can change their vertical lengths, bellows or the like can be used.

[0181] Moreover, the intermediate component, as a structure provided between the plurality of telescopic components to connect the upper and lower telescopic components located on the upper and lower sides, can stably set the telescopic part in order to prevent the telescopic part from being too long vertically.

[0182] In addition, preferably, the telescopic part 340 has a flange part 348 that expands in the radial direction from the part combined with the sealing component 360.

[0183] However, if the flange part 348 of the telescopic part 340 interferes with the flange part 348 of the adjacent telescopic part 340, it may prevent the minimization of the distance between a pair of lifting rods 310.

[0184] Thus, the flange part 348 of the telescopic part 340 can be arranged to overlap vertically with the flange part 348 of the adjacent telescopic part 340.

[0185] Moreover, as a method for the flange part 348 of the telescopic part 340 to overlap vertically with the flange part 348 of the adjacent telescopic part 340, one is to be provided on the upper part of the sealing component 360, and the other is to be combined below the sealing component 360.

[0186] Here, the flange part 348 of the telescopic part 340 can be combined with the sealing component 360 by various methods such as thermal spraying and closely combining in the state of overlapping sealing rings.

[0187] For the central lifting rod lifting part 300 having the above structure, according to its setting, among the lifting rods for lifting two substrates 10, the distance between the two substrates 10 driven by the driving structure of a pair of lifting rods for adjacent edges can be minimized.

[0188] In addition, the reference numerals 351, 352, 354, and 356 not shown in the drawings refer to components that minimize the frictional force when the lifting rod or the like moves up and down.

[0189] The above is only an illustration of a part of the preferred embodiments embodied by the present invention. As shown by the gist, the scope of the present invention cannot be construed as being limited to the above embodiments. All of the technical ideas of the present invention as described above and the technical ideas underlying the same need to be included within the scope of the present invention.

Claims

1. A substrate processing apparatus, characterized in that, comprising: a process chamber that forms a processing space capable of performing substrate processing on a rectangular substrate before being divided into two; and a substrate support frame disposed in the process chamber and having a pair of support regions that respectively support two rectangular substrates formed after the rectangular substrate before being divided into two is divided, the substrate processing apparatus further includes a lifting rod assembly, the lifting rod assembly is disposed in the process chamber and includes a plurality of lifting rods that are disposed in a manner of passing through the substrate support frame and being able to move up and down, the lifting rod assembly includes: a pair of central lifting rods disposed along the central portion of the substrate support frame that is the boundary portion where the two rectangular substrates face each other, and respectively supporting the edge bottom surfaces of the two adjacent rectangular substrates; and a central lifting rod lifting portion disposed along the central portion of the substrate support frame, and simultaneously driving the pair of central lifting rods up and down by the lifting drive of a single drive source.

2. The substrate processing apparatus according to claim 1, characterized in that, the central lifting rod lifting portion includes: a sealing member having a sealing tool, disposed on a through hole of the process chamber, and a lifting rod passing through the sealing member and being driven to lift by the drive source coupled to one end, and a lifting rod support portion coupled to the other end of the lifting rod and simultaneously supporting a pair of central lifting rods at the upper part, and a telescopic portion hermetically connecting the space between the sealing member and the lifting rod support portion and being able to perform telescopic up and down.

3. The substrate processing apparatus according to claim 1, characterized in that, the central lifting rod lifting portion includes: a sealing member having a sealing tool, disposed on a through hole of the process chamber, and a lifting rod passing through the sealing member and being driven to lift by the drive source coupled to one end, and a main support portion coupled to the other end of the lifting rod, and a pair of lifting rod support portions disposed at the upper part of the main support portion and being able to move up and down, and respectively supporting a pair of central lifting rods at the upper part, and a pair of height adjusting rods respectively coupled to the pair of lifting rod support portions, passing through the main support portion and the sealing member, and protruding downward from the sealing member, and respectively adjusting the height of the pair of central lifting rods by lifting, and a telescopic portion hermetically connecting the space between the sealing member and the main support portion and being able to perform telescopic up and down, and an auxiliary telescopic portion hermetically connecting the space between the lifting rod support portion and the main support portion and being able to perform telescopic up and down.

4. The substrate processing apparatus according to claim 1, characterized in that, the central lifting rod lifting portion includes: a sealing member having a sealing tool and disposed on a through hole of the process chamber, and a pair of lifting rods passing through the sealing member and being driven to lift by the drive source coupled to one end, and a rod support portion that supports one end of the pair of lifting rods protruding downward from the sealing member and is driven to lift by the drive source, The lifting rod support part is respectively coupled to the other ends of the pair of lifting rods, and simultaneously supports a pair of central lifting rods at the upper part, and The telescopic part hermetically connects the space between the hermetic member and the lifting rod support part, and can be telescopically extended and retracted vertically.

5. The substrate processing apparatus according to claim 1, characterized in that the central lifting rod lifting part includes: a hermetic member having a hermetic tool and provided on the through hole of the process chamber, and a pair of lifting rods penetrating the hermetic member and being driven to lift and lower by the drive source coupled to one end, and a rod support part supporting one end of the pair of lifting rods protruding downward from the hermetic member and being driven to lift and lower by the drive source, and a pair of lifting rod support parts respectively coupled to the other ends of the pair of lifting rods and respectively supporting a pair of central lifting rods at the upper part, and a telescopic part hermetically connecting each space between the hermetic member and the pair of lifting rod support parts and being telescopically extendable and retractable vertically.

6. The substrate processing apparatus according to claim 5, characterized in that each of the pair of telescopic parts includes a flange part expanding in the radial direction from the part where it is coupled to the hermetic member, the flange parts of the telescopic parts are arranged to overlap vertically with the flange parts of the adjacent telescopic parts.

7. The substrate processing apparatus according to any one of claims 2 to 6, characterized in that the telescopic part includes: a plurality of telescopic members arranged in the vertical direction so that the vertical length is variable, and an intermediate member provided between the plurality of telescopic members and connecting the telescopic members located on the upper side and the lower side vertically.

8. The substrate processing apparatus according to any one of claims 2 to 6, characterized in that the pair of central lifting rods are arranged in such a way that the vertical height can be finely adjusted relative to the lifting rod support part.

9. The substrate processing apparatus according to any one of claims 1 to 6, characterized in that the substrate support frame includes: an electrostatic chuck on which the substrate is mounted; and one or more outer sealing members provided along the edge of the electrostatic chuck and detachable; and one or more central sealing members provided on the upper part of the electrostatic chuck between the two rectangular substrates so as to connect the outer sealing members to divide a pair of support regions and respectively support the two rectangular substrates.

10. The substrate processing apparatus according to claim 9, characterized in that the electrostatic chuck includes: a base material which is made of a metal material, and a first insulating layer formed by thermal spraying on the base material, and a conductor layer formed on the first insulating layer and connected to a DC power supply to apply power to generate an electrostatic force, and a second insulating layer formed by thermal spraying on the conductor layer, the base material faces the central sealing member, and a bottom groove is formed on the upper part of the base material, an insulating layer is formed on the surface of the bottom groove, and finally an insertion groove into which the central sealing member can be inserted is formed.

11. The substrate processing apparatus according to claim 10, characterized in that the inner side surface of the bottom groove is inclined with the upper surface of the base material, and the width decreases from the upper side to the lower side.

12. The substrate processing apparatus according to claim 11, wherein, among the inclination angles formed by the upper part of the base material and the inner side surface of the bottom groove, the obtuse angle is inversely proportional to the depth of the bottom groove.

13. The substrate processing apparatus according to claim 10, wherein, the base material is made of aluminum or aluminum alloy, an anodizing treatment is performed before forming the first insulating layer, and the inner side surface of the bottom groove and the upper part of the base material form a perpendicular structure.

14. The substrate processing apparatus according to claim 10, wherein, each of the support regions includes: a plurality of protrusions protruding to fill the electrothermal gas between the bottom of the substrate and the upper part of the electrostatic chuck, and a base for supporting the bottom edge of the substrate to prevent the electrothermal gas from leaking to the outside.

15. The substrate processing apparatus according to claim 14, wherein, the height of the upper part of the central sealing member is the same as or lower than the height of the base.

16. The substrate processing apparatus according to claim 14, wherein, the central sealing member is located between the bases, and the bases correspond to the opposite inner sides of the rectangular substrate.

17. The substrate processing apparatus according to claim 10, wherein, each of the support regions independently controls the supply of the electrothermal gas.

18. The substrate processing apparatus according to claim 10, wherein, at least a part of the central sealing member and the outer sealing member are formed integrally.

19. The substrate processing apparatus according to claim 10, wherein, at least a part of the central sealing member and the outer sealing member overlap each other.

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