Quantum dot material, composition containing the quantum dot material, and electronic device

Abstract

The present disclosure relates to a quantum dot material, a composition and an electronic device comprising the quantum dot material, wherein the quantum dot material comprises: a quantum dot; and at least one ligand chemically bound to the surface of the quantum dot and represented by a certain formula. The composition and the electronic device each comprise the quantum dot material.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2021-0002580 filed in the Korean Intellectual Property Office on January 8, 2021, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] One or more embodiments are directed to a quantum-dot-containing material, and a composition and an electronic device, each including the quantum-dot-containing material. Background Art

[0004] Quantum dots are nanocrystals of semiconductor materials and exhibit quantum confinement effects. When quantum dots reach an excited energy state by receiving light from an excitation source, they emit energy by themselves according to the corresponding energy band gap. In this regard, even in the same material, the wavelength varies according to the particle size, and therefore, by adjusting the size of the quantum dots, light having a desired wavelength range can be obtained, and the desired (e.g., excellent) color purity and high luminous efficiency can be obtained. Therefore, quantum dots can be applied to various suitable devices.

[0005] In addition, quantum dots can be used as materials that perform various suitable optical functions (e.g., light conversion functions) in optical components. Quantum dots, which are nano-sized semiconductor nanocrystals, can have different energy band gaps by adjusting the size and composition of the nanocrystals, and can therefore emit light of various suitable emission wavelengths.

[0006] The optical member including such quantum dots may have the form of a thin film, for example, a patterned thin film for each sub-pixel. Such an optical member may be used as a color conversion member of a device including various suitable light sources. Summary of the invention

[0007] Aspects according to one or more embodiments relate to a quantum dot-containing material, the stability of which is enhanced by introducing an initiator moiety into a ligand chemically bound to the surface of the quantum dot. Aspects according to one or more embodiments relate to a composition and an electronic device, each of which increases quantum yield by adopting the quantum dot-containing material.

[0008] Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the presented embodiments of the disclosure.

[0009] In one or more embodiments, the quantum dot-containing material includes quantum dots and at least one ligand chemically bound to the surface of the quantum dots and represented by Formula 1.

[0010] Formula 1

[0011] R a -(Z 1 ) a1 -(L 1 ) b1 -(Z 2 ) a2 -P 1

[0012] Formula 2-1

[0013] *-N=N-(Z 3 ) a3 -R 1

[0014] Formula 2-2

[0015]

[0016] In Formula 1, Formula 2-1 and Formula 2-2,

[0017] R a It may be composed of -COOH, -PO 3 H, dithiolane or an anchoring group of a moiety represented by -SH,

[0018] L 1 Can be *-(CH 2 ) n1 -*' or *-(O-CH 2 -CH 2 ) n1 -O-*',

[0019] b1 can be an integer from 1 to 5,

[0020] P 1 It may be a group represented by Formula 2-1 or Formula 2-2,

[0021] Z 1 To Z 3 can be independently selected from *-O-*', *-C(=O)-*', *-C(=O)O-*', *-OC(=O)-*', *-OC(=O)-O-*', *-OCH 2 -*'、*-SCH 2 -*'、*-CH 2 S-*', *-CF 2 O-*'、*-OCF 2 -*', *-CF 2 S-*', *-SCF 2 -*'、*-(CH 2) n1 -*', *-CF 2 CH 2 -*'、*-CH 2 CF 2 -*'、*-(CF 2 ) n1 -*'、*-C(CH 3 )CN-*', *-CH=CH-*', *-CF=CF-*', *-C≡C-*', *-CH=CH-C(=O)O-*', *-OC(=O)-CH=CH-*', *-C(Q 1 )(Q 2 )-*' and *-O-(CH 2 )-O(C=O)-(CH 2 ) n2 -*',

[0022] n1 may be an integer from 1 to 6, and n2 may be an integer from 0 to 2,

[0023] a1 to a3 can each independently be an integer from 0 to 6,

[0024] R 1 Can be *-(CH 2 ) n3 -CH 3 or *-(O-CH 2 -CH 2 ) n1 -OH, and

[0025] n3 can be an integer from 0 to 5,

[0026] Among them, Q 1 and Q 2 can be independently selected from hydrogen, deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidine group, a hydrazine group, a hydrazone group, C 1 -C 60 Alkyl group, C 2 -C 60 Alkenyl group, C 2 -C 60 Alkyne group, C 1 -C 60 Alkoxy group, C 3 -C 10 Cycloalkyl group, C 1 -C 10 Heterocycloalkyl group, C 3 -C 10 Cycloolefin group, C 1 -C 10 Heterocycloolefin group, C6 -C 60 Aryl group, C 1 -C 60 heteroaromatic groups, monovalent nonaromatic condensed polycyclic groups, monovalent nonaromatic condensed heteropolycyclic groups, biphenyl groups and terphenyl groups, and

[0027] * and *' may each represent a binding site with an adjacent atom.

[0028] In one or more embodiments, a composition includes the quantum dot material, and

[0029] At least one solvent.

[0030] In one or more embodiments, an electronic device includes the quantum dot material.

[0031] In one or more embodiments, the electronic device may further include a light-emitting device, comprising: a first electrode; a second electrode facing the first electrode; an emission layer located between the first electrode and the second electrode; wherein the quantum dot material may be included in the emission layer.

[0032] In one or more embodiments, the electronic device may further include a light source, and the quantum dot-containing material may be located on (eg, pass through) a path of light emitted from the light source.

[0033] In one or more embodiments, the quantum dot-containing material may be included in a color conversion layer.

[0034] In one or more embodiments, the light source may be an organic light emitting device (OLED) or a light emitting diode (LED). BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The above and other aspects, features and improvements of some embodiments of the present disclosure will be more apparent through the following description in conjunction with the accompanying drawings, in which:

[0036] Figure 1 is a diagram schematically showing a structure of a quantum dot material according to an embodiment;

[0037] Figure 2 is a schematic diagram of a structure of a light emitting device included in an electronic device according to an embodiment of the present disclosure;

[0038] Figure 3 is a schematic cross-sectional view of a light emitting device according to an embodiment of the present disclosure;

[0039] Figure 4 is a schematic cross-sectional view of a light emitting device according to an embodiment of the present disclosure;

[0040] Figure 5A is a graph showing changes in the photoconversion efficiency (PCE) (%) of a thin film formed using the quantum dot-containing material according to Comparative Example 1 before and after baking;

[0041] Figure 5B is a graph showing changes in the photoconversion efficiency (PCE) (%) of a thin film formed using the quantum dot material according to Example 1 before and after baking;

[0042] Fig. 6A is a graph showing changes in PCE (%) of a thin film formed using the quantum dot-containing material according to Comparative Example 1 before and after exposure (eg, exposure to light); and

[0043] Figure 6B is a graph showing changes in PCE (%) of a thin film formed using the quantum dot-containing material according to Example 2 before and after exposure (eg, exposure to light). DETAILED DESCRIPTION

[0044] Reference will now be made in more detail to the embodiments and examples shown in the accompanying drawings, wherein the same reference numerals refer to the same elements throughout the specification. In this regard, the present embodiment may have different forms and should not be construed as being limited to the description set forth herein. Therefore, the embodiments are described below only by reference to the accompanying drawings to explain the various aspects of this description. As used herein, the term "and / or" includes any combination and all combinations of one or more related listed items. Throughout the disclosure, the expression "at least one of a, b, and c" means only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof.

[0045] Because the present disclosure can have multiple modified embodiments, embodiments are shown in the drawings and described in the detailed description. When referring to the embodiments described with reference to the drawings, the effects and features of the present disclosure and the methods for achieving these will be apparent. However, the present disclosure can be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein.

[0046] One or more embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Regardless of the figure number, those components that are the same (or substantially similar) or correspond to each other are given the same (or substantially similar) reference numerals, and redundant explanations are omitted (not provided).

[0047] It will be understood that although the terms "first", "second", etc. may be used herein to describe various suitable components, these components should not be limited by these terms. These components are only used to distinguish one component from another component.

[0048] An expression used in the singular includes the expression in the plural unless it has an obviously different meaning in the context.

[0049] It will also be understood that the terms “comprising” and / or “comprising” as used herein specify the presence of stated features or elements, but do not preclude the presence or addition of one or more other features or elements.

[0050] In the following embodiments, when various suitable components such as layers, films, regions, plates, etc. are referred to as being "on" another component (such as a layer, film, region, plate, etc.), this may include not only the case where another component (such as a layer, film, region, plate, etc.) is "immediately on" the layer, film, region, or plate (e.g., without any intervening elements therebetween), but also the case where other components (such as layers, films, regions, plates, etc.) may be placed therebetween. For ease of explanation, the sizes of the elements in the drawings may be exaggerated. In other words, because the sizes and thicknesses of the components in the drawings are arbitrarily shown for ease of explanation, the following embodiments are not limited thereto.

[0051] Quantum dot materials

[0052] Figure 1 is a diagram schematically showing a structure of a quantum dot material according to an embodiment of the present disclosure.

[0053] Reference Figure 1 , the quantum dot material 1 includes: quantum dots 2; and at least one ligand 3 chemically bonded to the surface of the quantum dots 2 and represented by Formula 1:

[0054] Formula 1

[0055] R a -(Z 1 ) a1 -(L 1 ) b1 -(Z 2 ) a2 -P 1

[0056] Among them, in formula 1,

[0057] R a It may be composed of -COOH, -PO 3 Anchor group 4 of a moiety represented by H, dithiolane or -SH.

[0058] In this regard, the anchoring group 4 is a binding group that allows the ligand 3 to attach (eg, adsorb) to the quantum dot 2 when the ligand 3 is bound to the quantum dot 2 .

[0059] In one or more embodiments, R a Can be selected from -COOH, -PO3 H, -SH or a group represented by one of Formula 3-1 to Formula 3-4:

[0060]

[0061] In formula 3-1 to formula 3-4,

[0062] * indicates the binding site with the adjacent atom.

[0063] For example, R a Can be -SH.

[0064] L in Formula 1 1 Can be *-(CH2) n1 -*', or *-(O-CH 2 -CH 2 ) n1 -O-*'.

[0065] When L 1 *-(CH 2 ) n1 -*', it is possible to reduce the polarity of the quantum dot material, and when L 1 *-(O-CH 2 -CH 2 ) n1 -O-*', the polarity of the quantum dot-containing material may be increased.

[0066] b1 in Formula 1 may be an integer from 1 to 5.

[0067] b1 represents L 1 When b1 is 2 or more, two or more L 1 May be the same as or different from each other.

[0068] P in Formula 1 1 It may be a group represented by Formula 2-1 or Formula 2-2.

[0069] Formula 2-1

[0070] *-N=N-(Z 3 ) a3 -R 1

[0071] Formula 2-2

[0072]

[0073] P 1 A radical that decomposes by light exposure (hv) (eg, exposure to light) or heat to form a free radical.

[0074] For example, the group represented by Formula 2-1 can release N 2 and simultaneously decomposed by heat to form two free radicals.

[0075] For example, the group represented by Formula 2-2 may be decomposed by exposure to light (hv) (eg, exposure to light) to form a radical based on the following mechanism.

[0076]

[0077] Among them, in Formula 1, Formula 2-1 and Formula 2-2,

[0078] Z 1 To Z 3 can be independently selected from *-O-*', *-C(=O)-*', *-C(=O)O-*', *-OC(=O)-*', *-OC(=O)-O-*', *-OCH 2 -*'、*-SCH 2 -*'、*-CH 2 S-*', *-CF 2 O-*'、*-OCF 2 -*', *-CF 2 S-*', *-SCF 2 -*'、*-(CH 2 ) n1- *', *-CF 2 CH 2 -*'、*-CH 2 CF 2 -*'、*-(CF 2 ) n1 -*'、*-C(CH 3 )CN-*', *-CH=CH-*', *-CF=CF-*', *-C≡C-*', *-CH=CH-C(=O)O-*', *-OC(=O)-CH=CH-*', *-C(Q 1 )(Q 2 )-*' and *-O-(CH 2 )-O(C=O)-(CH 2 ) n2 -*'.

[0079] In one or more embodiments, Z 1 Can be *-(CH 2 ) n1 -*'.

[0080] In one or more embodiments, Z 2 and Z 3can be independently *-O-*', *-C(=O)O-*', *-OC(=O)-*', *-(CH 2 ) n1 -*' or *-C(CH 3 )CN-*'.

[0081] In one or more embodiments, *-(Z 2 ) a2 -*' and *-(Z 3 ) a3 -*' may each independently be a group represented by one of Formula 4-1 to Formula 4-4:

[0082]

[0083] In Formula 4-1 to Formula 4-4,

[0084] * and *' each represent a binding site with an adjacent atom.

[0085] In Formula 1 and Formula 2-1 to Formula 2-2, n1 may be an integer from 1 to 6, and n2 may be an integer from 0 to 2, and

[0086] a1 to a3 may be an integer from 0 to 6, each independently.

[0087] a1 to a3 represent Z 1 To Z 3 and when a1 is 2 or more, two or more Z 1 (s) may be the same or different from each other. When a2 is 2 or more, Z 2 Two or more of (s) may be the same or different from each other. When a3 is 2 or more, Z 3 Two or more of (s) may be the same or different from each other. When a1 is 0, -(Z 1 ) a1 - can be a single bond. When a2 is 0, -(Z 2 ) a2 - may be a single bond, and when a3 is 0, -(Z 3 ) a3 - can be a single bond.

[0088] In formula 2-1, R 1 Can be *-(CH 2 ) n3 -CH 3 , or *-(O-CH 2 -CH 2 ) n1 -OH, and n3 may be an integer from 0 to 5.

[0089] When R 1 *-(CH 2 ) n3 -CH 3 When R 1 *-(O-CH 2 -CH 2 ) n1 -OH may increase the polarity of the quantum dot-containing material.

[0090] Q 1 and Q 2 can be independently selected from hydrogen, deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidine group, a hydrazine group, a hydrazone group, C 1 -C 60 Alkyl group, C 2 -C 60 Alkenyl group, C 2 -C 60 Alkyne group, C 1 -C 60 Alkoxy group, C 3 -C 10 Cycloalkyl group, C 1 -C 10 Heterocycloalkyl group, C 3 -C 10 Cycloolefin group, C 1 -C 10 Heterocycloolefin group, C 6 -C 60 Aryl group, C 1 -C 60 A heteroaromatic group, a monovalent nonaromatic condensed polycyclic group, a monovalent nonaromatic condensed heteropolycyclic group, a biphenyl group, and a terphenyl group, and * and *' may each represent a binding site to an adjacent atom.

[0091] d1 in Formula 1 may be an integer from 0 to 4.

[0092] In one or more embodiments, ligand 3 may be represented by Formula 1A or Formula 1B:

[0093] Formula 1A

[0094]

[0095] Formula 1B

[0096]

[0097] In Formula 1A and Formula 1B,

[0098] R a , L 1, b1 and R 1 Same as above.

[0099] In one or more embodiments, the ligand 3 may include two or more ligands, and the two or more ligands included in the ligand 3 may be the same as or different from each other.

[0100] In some embodiments, the ligand 3 can be chemically bound to the surface of the quantum dot 2 via the anchoring group 4 .

[0101] In one or more embodiments, the quantum dot 2 may be: a semiconductor nanoparticle; a particle having a core-shell structure including a core comprising a first semiconductor and a shell comprising a second semiconductor; or a perovskite compound.

[0102] In some embodiments, the quantum dots 2 may be semiconductor nanoparticles or core-shell structured particles.

[0103] In some embodiments, the semiconductor nanoparticles, the first semiconductor, and the second semiconductor may each independently include a Group 10 compound, a Group 11 compound, a Group 12-16 compound, a Group 13-15 compound, a Group 14-16 compound, a Group 14 compound, a Group 11-13-16 compound, a Group 11-12-13-16 compound, or any combination thereof.

[0104] In some embodiments, the semiconductor nanoparticles, the first semiconductor, and the second semiconductor may each independently include:

[0105] Au, Pd or Ag;

[0106] CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgS, MgSe; CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnT e. CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnS, MgZnSe; CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe or HgZnSTe;

[0107] GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb; GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InAlP, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP; GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb or InZnP;

[0108] SnS, SnSe, SnTe, PbS, PbSe, PbTe; SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe; SnPbSSe, SnPbSeTe or SnPbSTe;

[0109] Si, Ge, SiC or SiGe;

[0110] AgInS, AgInS 2 , CuInS, CuInS 2 , CuGaO 2 , AgGaO 2 or AgAlO 2 ; or

[0111] any combination thereof.

[0112] In one or more embodiments, the first semiconductor may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgS, MgSe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnS, MgZnSe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe , GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InAlP, InNP, InNAs, InN and

[0113] The second semiconductor may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgS, MgSe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnS, MgZnSe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, or combinations thereof.

[0114] In one or more embodiments, the average particle size (D50) of the quantum dots 2 can be from about 2 nm to about 10 nm. As used herein, unless otherwise defined, the average particle size (D50) refers to the diameter of particles having a cumulative volume of 50% volume in a particle size distribution. The average particle size (D50) can be measured by a suitable technique, for example, using a particle size analyzer, transmission electron microscopy, and / or scanning electron microscopy. Another method can be performed by using a measuring device with dynamic light scattering, analyzing the data to count the number of particles relative to each particle size, and then calculating to obtain the average particle size (D50).

[0115] The average diameter (D50) of the quantum dot material 1 may be from about 40 nm to about 1000 nm, for example, from about 50 nm to about 1000 nm, or from about 100 nm to about 500 nm. In one or more embodiments, the average diameter (D50) of the quantum dot material 1 may be from about 100 nm to about 200 nm. When the average diameter (D50) of the quantum dot material 1 satisfies these ranges, the quantum dot material 1 may have a desired (e.g., excellent) dispersion while having a relatively large number of quantum dots 2.

[0116] In the related art, when a film is formed using a composition containing quantum dots, a composition containing an initiator, a free radical scavenger, a reactive monomer, a dispersant, and a ligand-substituted quantum dot is used. In the film formation process using this composition, the miscibility of the initiator and the solvent is considered. In this regard, when the dispersion state of the quantum dots and the initiator is uneven, the pattern formed using the film may be uneven (for example, the film pattern formed using this composition may be uneven in thickness and / or composition). In addition, the efficiency of the quantum dots may be reduced by free radicals.

[0117] In the quantum dot material 1, a ligand 3 containing an initiator portion is placed on the surface of the quantum dot 2 to induce the growth of a polymer on the surface of the quantum dot 2, and at the same time, to protect the quantum dot 2 from the attack of free radicals.

[0118] In addition, since the initiator portion is included in the ligand 3, a scavenger or initiator (e.g., a separate scavenger or initiator) is not required, which leads to cost reduction and simplification of the process. Moreover, since the quantum dots 2 and the initiator portion are included in the quantum dot material 1, the quantum dots 2 and the initiator portion can be uniformly distributed. Therefore, during the formation of the resulting composition and film, the efficiency of the quantum dot material 1 can be maintained, and the stability of the quantum dot material 1 can be improved.

[0119] In some embodiments, the perovskite compound is a compound having a 3Materials with a three-dimensional crystal structure related to the crystal structure.

[0120] In some embodiments, the perovskite compound can be represented by Formula 4:

[0121] Formula 4

[0122] [A][B m [X] 3

[0123] Wherein, in Formula 4,

[0124] A can be at least one of a monovalent organic cation, a monovalent inorganic cation, or any combination thereof,

[0125] B can be at least one divalent inorganic cation.

[0126] m is a real number satisfying the condition 0 < m ≤ 1, and

[0127] X can be at least one monovalent anion.

[0128] Composition

[0129] According to another embodiment, a composition including a quantum dot material and at least one solvent is provided.

[0130] Based on the total weight of the composition, the amount of the quantum dot material in the composition can be from about 0.1 wt% or more to about 20 wt% or less, or from about 0.2 wt% or more to about 10 wt% or less. However, the amount of the quantum dot material is not limited thereto. Within these ranges, the composition can be suitable for manufacturing a light-emitting device having sufficient luminous efficiency in a soluble process (e.g., in a process using a solution of the quantum dot material).

[0131] Due to improved film uniformity, improved charge injection balance, improved quantum dot efficiency affected by the transport layer, and / or due to the improvement of the pores of the quantum dots (e.g., the gaps between the quantum dots) in preventing direct contact between the electron transport layer (e.g., the electron transport layer) and the hole transport layer (e.g., the hole transport layer), a light-emitting device including a quantum dot material can provide sufficient luminous efficiency and / or long lifetime.

[0132] As long as the solvent can appropriately disperse the quantum dot material, the type of the solvent (e.g., the type) is not limited.

[0133] For example, the solvent can be an organic solvent.

[0134] For example, the solvent can include a solvent having a boiling point of about 100 °C or higher and about 180 °C or lower.

[0135] In one or more embodiments, the solvent may be selected from chlorine-based solvents, ether-based solvents, ester-based solvents, ketone-based solvents, aliphatic hydrocarbon-based solvents, and aromatic hydrocarbon-based solvents, but embodiments of the present disclosure are not limited thereto.

[0136] In one or more embodiments, the solvent may include dichloromethane, 1,2-dichloroethane, 1,1,2-trichloroethane, chlorobenzene, o-dichlorobenzene, cyclohexylbenzene, tetrahydrofuran, dioxane, anisole, 4-methylanisole, butylphenyl ether, toluene, xylene, mesitylene, ethylbenzene, n-hexylbenzene, cyclohexylbenzene, trimethylolbenzene, tetralin, cyclohexane, methylcyclohexane, n-pentane, n-hexane, n-heptane, n-octane, n-nonane, n-decane, dodecane, hexadecane, oxadecane, acetone, methyl ethyl ketone, cyclohexanone, acetophenone, ethyl acetate, butyl acetate, methyl acetate, ethyl acetate, methyl benzoate, ethyl benzoate, butyl benzoate, 3-phenoxybenzoic acid, or any combination thereof, but the embodiments of the present disclosure are not limited thereto.

[0137] Based on the total weight of the composition, the amount of solvent in the composition can be from about 80 wt % or more to about 99.9 wt % or less, or from about 90 wt % or more to about 99.8 wt % or less, but the embodiments of the present disclosure are not limited thereto. Within these ranges, the quantum dot material can be appropriately dispersed in the composition (e.g., ink composition), and a solid content concentration suitable for a soluble process (e.g., a process using a solution containing a quantum dot material) can be obtained.

[0138] In one or more embodiments, the composition may further include a monomer containing at least one double bond.

[0139] The monomer may be an acrylic monomer or a styrene monomer.

[0140] In one or more embodiments, the monomer may be methyl methacrylate, styrene, methacrylic acid, or a combination thereof.

[0141] As described above, in the quantum dot-containing material of the present disclosure, the ligand containing the initiator portion is bound to (i.e., anchored to) the surface of the quantum dot, and thus free radicals can be formed on the surface of the quantum dot by exposure (hv) (e.g., exposure to light) or heating.

[0142] The monomers can be polymerized by the free radicals formed in this way. As a result, the growth of polymers can be induced on the surface of the quantum dots.

[0143] In some embodiments, the composition may not include an initiator.

[0144] In some embodiments, the composition may not include a scavenger.

[0145] The composition may also include a hole transport compound or an electron transport compound.

[0146] The hole transport compound may also be the same as a hole transport compound incorporated in a hole transport region which will be described later.

[0147] The electron transport compound may be the same as the electron transport compound incorporated in the electron transport region which will be described later.

[0148] The amount of the hole transport compound or the electron transport compound in the composition may be from about 0.5 wt % or more to about 20 wt % or less, or from about 0.5 wt % or less to about 15 wt % or less, based on the total weight of the composition. However, embodiments of the present disclosure are not limited thereto.

[0149] The viscosity of the composition may be from about 1 centipoise (cP) to about 10 cPs. The composition satisfying this viscosity range may be suitable for manufacturing a quantum dot layer of a light emitting device by using a soluble process (eg, a process using a solution containing a quantum dot material).

[0150] The surface tension of the composition may be from about 10 dyne / cm to about 40 dyne / cm. The composition satisfying this surface tension range may be suitable for manufacturing a quantum dot layer of a light emitting device by using a soluble process (eg, in a process using a solution containing a quantum dot material).

[0151] Light-emitting device

[0152] Figure 2 The cross-sectional view of the light emitting device 10 included in the electronic device according to the embodiment is schematically shown. The light emitting device 10 includes a first electrode 110, an intermediate layer 130, and a second electrode 150.

[0153] In the following, we will combine Figure 2 A structure of a light emitting device 10 and a method of manufacturing the light emitting device 10 according to the embodiment are described.

[0154] First electrode 110

[0155] exist Figure 2In the embodiment, the substrate may be additionally located below the first electrode 110 or above the second electrode 150. As the substrate, a glass substrate or a plastic substrate may be used. In one or more embodiments, the substrate may be a flexible substrate and may include a plastic having desired (e.g., excellent) heat resistance and durability, such as polyimide, polyethylene terephthalate (PET), polycarbonate, polyethylene naphthalate, polyarylate (PAR), polyetherimide, or any combination thereof.

[0156] The first electrode 110 may be formed by, for example, depositing or sputtering a material for forming the first electrode 110 on a substrate. When the first electrode 110 is an anode, the material for forming the first electrode 110 may be a high work function material that facilitates hole injection.

[0157] The first electrode 110 may be a reflective electrode, a semi-transmissive electrode, or a transmissive electrode. When the first electrode 110 is a transmissive electrode, a material for forming the first electrode 110 may include indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO 2 ), zinc oxide (ZnO), or any combination thereof. In one or more embodiments, when the first electrode 110 is a semi-transmissive electrode or a reflective electrode, magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof may be used as a material for forming the first electrode 110.

[0158] The first electrode 110 may have a single layer structure consisting of a single layer structure or a multi-layer structure including a plurality of layers. For example, the first electrode 110 may have a triple-layer structure of ITO / Ag / ITO.

[0159] Middle layer 130

[0160] The intermediate layer 130 may be located on the first electrode 110. The intermediate layer 130 may include an emission layer 133.

[0161] The intermediate layer 130 may further include a hole transport region 131 between the first electrode 110 and the emission layer 133 and an electron transport region 135 between the emission layer 133 and the second electrode 150 .

[0162] The intermediate layer 130 may further include a metal-containing compound such as an organic metal compound and / or an inorganic material such as a quantum dot, etc., in addition to various suitable organic materials.

[0163] In one or more embodiments, the intermediate layer 130 may include: i) two or more emission units sequentially stacked between the first electrode 110 and the second electrode 150, and ii) a charge generation layer located between the two emission units. When the intermediate layer 130 includes the light-emitting unit and the charge generation layer as described above, the light-emitting device 10 may be a tandem light-emitting device.

[0164] The hole transport region 131 in the intermediate layer 130

[0165] The hole transport zone 131 may have: i) a single-layer structure consisting of a single layer consisting of a single material, ii) a single-layer structure including (e.g., consisting of) a single layer that includes (e.g., consists of) a plurality of different materials, or iii) a multi-layer structure including a plurality of layers containing different materials.

[0166] The hole transport region 131 may include a hole injection layer (HIL), a hole transport layer (HTL), an emission assisting layer, an electron blocking layer (EBL), or any combination thereof.

[0167] For example, the hole transport zone 131 may have a multilayer structure including a hole injection layer / hole transport layer structure, a hole injection layer / hole transport layer / emission assisting layer structure, a hole injection layer / emission assisting layer structure, a hole transport layer / emission assisting layer structure or a hole injection layer / hole transport layer / emission assisting layer structure, wherein in each structure, the individual layers are stacked in sequence from the first electrode 110 in the order stated respectively.

[0168] The hole transport region 131 may include a compound represented by Formula 201, a compound represented by Formula 202, or any combination thereof:

[0169] Formula 201

[0170]

[0171] Formula 202

[0172]

[0173] Among them, in equation 201 and equation 202,

[0174] L 201 To L 204 may be independently unsubstituted or substituted with at least one R 10a Substituted C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a Substituted C 1 -C 60 Heterocyclic groups,

[0175] L 205 Can be *-O-*', *-S-*', *-N(Q 201 )-*', unsubstituted or replaced by at least one R 10a Substituted C 1 -C 20 Alkylene group, unsubstituted or substituted with at least one R 10a Substituted C 2 -C 20 Alkenylene group, unsubstituted or substituted with at least one R 10a Substituted C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a Substituted C1-C60 heterocyclic group,

[0176] xa1 to xa4 can each independently be an integer from 0 to 5,

[0177] xa5 can be an integer from 1 to 10,

[0178] R 201 To R 204 and Q 201 may be independently unsubstituted or substituted with at least one R 10a Substituted C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a Substituted C 1 -C 60 Heterocyclic groups,

[0179] R 201 and R 202 may be optionally substituted via a single bond, unsubstituted or substituted by at least one R 10a Substituted C 1 -C 5 The alkylene group is either unsubstituted or substituted with at least one R 10a Substituted C 2 -C 5 Alkenylene groups are linked to each other to form an unsubstituted or substituted R 10a (For example, compound HT16) substituted C 8 -C 60 Polycyclic groups (eg, carbazole groups and / or similar groups, etc.).

[0180] R 203 and R 204 may be optionally substituted by a single bond, unsubstituted or by at least one R 10a Substituted C 1 -C 5 The alkylene group is either unsubstituted or substituted with at least one R10a Substituted C 2 -C 5 Alkenylene groups are linked to each other to form an unsubstituted or substituted R 10a Substituted C 8 -C 60 polycyclic groups, and

[0181] na1 can be an integer from 1 to 4.

[0182] In one or more embodiments, each of Formula 201 and Formula 202 may include at least one of the groups represented by Formula CY201 to Formula CY217.

[0183]

[0184] R in formula CY201 to CY217 10b and R 10c Combined with R 10a Same as described, CY 201 To Ring CY 204 Can be independently C 3 -C 20 Carbocyclic group or C 1 -C 20 A heterocyclic group, and at least one hydrogen in Formulas CY201 to CY217 may be unsubstituted or replaced by R 10a replace.

[0185] In one or more embodiments, ring CY in formula CY201 to CY217 201 To Ring CY 204 Each may independently be a benzene group, a naphthyl group, a phenanthrene group or an anthracene group.

[0186] In one or more embodiments, each of Formula 201 and Formula 202 may include at least one of the groups represented by Formula CY201 to Formula CY203.

[0187] In one or more embodiments, Formula 201 may include at least one of the groups represented by Formulas CY201 to CY203 and at least one of the groups represented by Formulas CY204 to CY217.

[0188] In one or more embodiments, xa1 in equation 201 may be 1, R 201 may be a group represented by one of the formulas CY201 to CY203, xa2 may be 0, and R 202 It may be a group represented by one of the formulae CY204 to CY207.

[0189] In one or more embodiments, each of Formula 201 and Formula 202 may not include at least one of the groups represented by Formula CY201 to Formula CY203.

[0190] In one or more embodiments, each of Formula 201 and Formula 202 may not include at least one of the groups represented by Formula CY201 to Formula CY203, and may include at least one of the groups represented by Formula CY204 to Formula CY217.

[0191] In one or more embodiments, each of Formula 201 and Formula 202 may not include at least one of the groups represented by Formula CY201 to Formula CY217.

[0192] In one or more embodiments, the hole transport region 131 may include one of compounds HT1 to HT46, m-MTDATA, TDATA, 2-TNATA, NPB (NPD), β-NPB, TPD, Spiro-TPD, Spiro-NPB, methylated NPB, TAPC, HMTPD, 4,4',4"-tri(N-carbazolyl)triphenylamine (TCTA), polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA), poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS), polyaniline / camphorsulfonic acid (PANI / CSA), polyaniline / poly(4-styrenesulfonate) (PANI / PSS), or any combination thereof:

[0193]

[0194]

[0195]

[0196]

[0197]

[0198] The thickness of the hole transport region 131 may be in the range of about 50 angstroms to about 10,000 angstroms, for example, about 100 angstroms to about 4,000 angstroms. When the hole transport region 131 includes a hole injection layer, a hole transport layer, or any combination thereof, the thickness of the hole injection layer may be in the range of about 100 angstroms to about 9,000 angstroms, for example, about 100 angstroms to about 1,000 angstroms, and the thickness of the hole transport layer may be in the range of about 50 angstroms to about 2,000 angstroms, for example, about 100 angstroms to about 1,500 angstroms. When the thicknesses of the hole transport region 131, the hole injection layer, and the hole transport layer are within their respective ranges, satisfactory hole transport characteristics may be obtained without significantly increasing the driving voltage.

[0199] The emission auxiliary layer may improve light emission efficiency by compensating the optical resonance distance according to the wavelength of light emitted by the emission layer 133, and the electron blocking layer may block or reduce the flow of electrons from the electron transport region 135. The emission auxiliary layer and the electron blocking layer may include materials as described above.

[0200] p-dopant

[0201] In addition to the above materials, the hole transport region 131 may further include a charge generating material for improving conductivity. The charge generating material may be uniformly or non-uniformly dispersed in the hole transport region 131 (eg, in the form of a single layer including (eg, consisting of) the charge generating material).

[0202] The charge generating material may be, for example, a p-dopant.

[0203] In one or more embodiments, the lowest unoccupied molecular orbital (LUMO) energy level of the p-dopant may be approximately −3.5 eV or less.

[0204] In one or more embodiments, the p-dopant may include a quinone derivative, a compound containing a cyano group, a compound containing the element EL1 and the element EL2, or any combination thereof.

[0205] Examples of the quinone derivative may include TCNQ, F4-TCNQ, and the like.

[0206] Examples of the cyano group-containing compound may include HAT-CN and a compound represented by the following Formula 221.

[0207]

[0208] Formula 221

[0209]

[0210] In formula 221,

[0211] R 221 To R 223 may be independently unsubstituted or substituted with at least one R 10a Substituted C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a Substituted C 1 -C 60 Heterocyclic groups, and

[0212] R 221 To R 223 At least one of them may be independently: C each substituted by a cyano group, -F, -Cl, -Br, -I 3 -C 60 Carbocyclic group or C 1 -C 60 Heterocyclic group; C substituted by cyano group, -F, -Cl, -Br, -I or any combination thereof 1 -C 20 an alkyl group; or any combination thereof.

[0213] In the compound containing the element EL1 and the element EL2, the element EL1 may be a metal, a metalloid, or a combination thereof, and the element EL2 may be a nonmetal, a metalloid, or a combination thereof.

[0214] Examples of metals may include alkali metals (e.g., lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), etc.); alkaline earth metals (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), etc.); transition metals (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (Co), etc.); (e.g., tantalum (Tb), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.).

[0215] Examples of metalloids may include silicon (Si), antimony (Sb), and tellurium (Te).

[0216] Examples of non-metals may include oxygen (O) and halogens (eg, F, Cl, Br, I, etc.).

[0217] In one or more embodiments, examples of compounds containing element EL1 and element EL2 may include metal oxides, metal halides (e.g., metal fluorides, metal chlorides, metal bromides, or metal iodides), metalloid halides (e.g., metalloid fluorides, metalloid chlorides, metalloid bromides, and / or metalloid iodides), metal tellurides, or any combination thereof.

[0218] Examples of metal oxides may include tungsten oxide (eg, WO, W 2 O 3 , WO 2 , WO 3 , W 2 O 5 etc.), vanadium oxides (e.g., VO, V 2 O 3 , VO 2 、V 2 O 5 etc.), molybdenum oxide (MoO, Mo 2 O 3 、MoO 2 、MoO 3 、Mo 2 O 5 etc.) and rhenium oxide (e.g., ReO 3 wait).

[0219] Examples of the metal halide may include alkali metal halides, alkaline earth metal halides, transition metal halides, post-transition metal halides, and lanthanide metal halides.

[0220] Examples of alkali metal halides may include LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, and CsI.

[0221] Examples of alkaline earth metal halides may include BeF 2 MgF 2 , CaF 2 , SrF 2 , BaF 2 、BeCl 2 MgCl 2 , CaCl 2 、SrCl 2 、BaCl 2 ,BeBr 2 MgBr 2, CaBr 2 , SrBr 2 ,BaBr 2 ,BeI 2 MgI 2 ,CaI 2 , SrI 2 and BaI 2 .

[0222] Examples of transition metal halides may include titanium halides (eg, TiF 4 、TiCl 4 、TiBr 4 、TiI 4 etc.), zirconium halides (e.g., ZrF 4 、ZrCl 4 , ZrBr 4 , ZrI 4 etc.), hafnium halides (e.g., HfF 4 , HfCl 4 , HfBr 4 , HfI 4 etc.), vanadium halides (e.g., VF 3 、VCl 3 , VBr 3 VI 3 etc.), niobium halides (e.g., NbF 3 、NbCl 3 , NbBr 3 , NbI 3 etc.), tantalum halides (such as TaF 3 、TaCl 3 、TaBr 3 、TaI 3 etc.), chromium halides (e.g., CrF 3 CrCl 3 CrBr 3 CrI 3 etc.), molybdenum halides (such as MoF 3 、MoCl 3 、MoBr 3 、MoI 3 etc.), tungsten halides (e.g., WF 3 、WCl 3 , WBr 3 , WI 3 etc.), manganese halides (e.g., MnF 2 、MnCl 2 、MnBr 2 、MnI 2 etc.), technetium halides (e.g., TcF 2 , TcCl 2, TcBr 2 , TcI 2 etc.), rhenium halides (e.g., ReF 2 、ReCl 2 、ReBr 2 、ReI 2 etc.), ferrous halides (e.g., FeF 2 、FeCl 2 , FeBr 2 ,FeI 2 etc.), ruthenium halides (e.g., RuF 2 、RuCl 2 ,RuBr 2 , RuI 2 etc.), osmium halides (such as OsF 2 , OsCl 2 、OsBr 2 , OsI 2 etc.), cobalt halides (e.g., CoF 2 、CoCl 2 ,CoBr 2 、CoI 2 etc.), rhodium halides (e.g., RhF 2 , RhCl 2 , RhBr 2 , RhI 2 etc.), iridium halides (e.g., IrF 2 、IrCl 2 ,IrBr 2 ,IrI 2 etc.), nickel halides (e.g., NiF 2 、NiCl 2 、NiBr 2 , NiI 2 etc.), palladium halides (e.g., PdF 2 , PdCl 2 , PdBr 2 , PdI 2 etc.), platinum halides (e.g., PtF 2 、PtCl 2 , PtBr 2 , PtI 2 etc.), cuprous halides (e.g., CuF, CuCl, CuBr, CuI, etc.), silver halides (e.g., AgF, AgCl, AgBr, AgI, etc.), and gold halides (e.g., AuF, AuCl, AuBr, AuI, etc.).

[0223] Examples of late transition metal halides may include zinc halides (e.g., ZnF 2 、ZnCl 2 、ZnBr2 、ZnI 2 etc.), indium halides (e.g., InI 3 etc.) and tin halides (e.g., SnI 2 wait).

[0224] Examples of lanthanide metal halides may include YbF, YbF 2 , YbF 3 、SmF 3 、YbCl、YbCl 2 YbCl 3 、SmCl 3 , YbBr, YbBr 2 , YbBr 3 、SmBr 3 、YbI、YbI 2 ,YbI 3 and SmI 3 .

[0225] Examples of metalloid halides may include antimony halides (eg, SbCl 5 wait).

[0226] Examples of metal tellurides may include alkali metal tellurides (eg, Li 2 Te、Na 2 Te, K 2 Te、Rb 2 Te, Cs 2 Te, etc.), alkaline earth metal tellurides (e.g., BeTe, MgTe, CaTe, SrTe, BaTe, etc.), transition metal tellurides (e.g., TiTe 2 、ZrTe 2 、HfTe 2 、V 2 Te 3 , Nb 2 Te 3 、 2 Te 3 Cr 2 Te 3 、Mo 2 Te 3 , W 2 Te 3 , MnTe, TcTe, ReTe, FeTe, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu 2 Te, CuTe, Ag 2 Te, AgTe, Au 2Te, etc.), transition metal tellurides (e.g., ZnTe, etc.), and lanthanide metal tellurides (e.g., LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, etc.).

[0227] Emission layer 133 in the middle layer 130

[0228] When the light-emitting device 10 is a full-color light-emitting device, the emission layer 133 can be patterned into a red emission layer, a green emission layer and / or a blue emission layer according to the sub-pixel. In one or more embodiments, the emission layer 133 may have a stacked structure of two or more layers of a red emission layer, a green emission layer and a blue emission layer, in which the two or more layers are in contact with each other or separated from each other. In one or more embodiments, the emission layer may include two or more materials of a red light-emitting material, a green light-emitting material and a blue light-emitting material, in which the two or more materials are mixed with each other in a single layer to emit white light.

[0229] The emission layer 133 may include a host and a dopant. The dopant may include a phosphorescent dopant, a fluorescent dopant, or any combination thereof.

[0230] The amount of the dopant in the emission layer 133 may be from about 0.01 to about 15 parts by weight based on 100 parts by weight of the host.

[0231] In one or more embodiments, the emission layer 133 may include quantum dots.

[0232] In one or more embodiments, the emission layer 133 may include a delayed fluorescent material. The delayed fluorescent material may be used as a host or a dopant in the emission layer 133.

[0233] The thickness of the emission layer 133 may be in a range of about 100 angstroms to about 1000 angstroms, for example, about 200 angstroms to about 600 angstroms. When the thickness of the emission layer 133 is within these ranges, desired (eg, excellent) light emitting characteristics may be obtained without a significant increase in driving voltage.

[0234] main body

[0235] In one or more embodiments, the host may include a compound represented by Formula 301 below.

[0236] Formula 301

[0237] [Ar 301 ] xb11 -[(L 301 ) xb1 -R 301 ] xb21

[0238] In formula 301,

[0239] Ar 301 and L 301 may be independently unsubstituted or substituted with at least one R 10a Substituted C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a Substituted C 1 -C 60 Heterocyclic groups,

[0240] xb11 can be 1, 2 or 3,

[0241] xb1 can be an integer from 0 to 5,

[0242] R 301 It can be hydrogen, deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, a nitro group, unsubstituted or replaced by at least one R 10a Substituted C 1 -C 60 Alkyl group, unsubstituted or substituted with at least one R 10a Substituted C 2 -C 60 Alkenyl groups, unsubstituted or substituted with at least one R 10a Substituted C 2 -C 60 Alkynyl group, unsubstituted or substituted with at least one R 10a Substituted C 1 -C 60 Alkoxy groups, unsubstituted or substituted with at least one R 10a Substituted C 3 -C 60 A carbocyclic group, unsubstituted or substituted with at least one R 10a Substituted C 1 -C 60 Heterocyclic group, -Si(Q 301 )(Q 302 )(Q 303 )、-N(Q 301 )(Q 302 )、-B(Q 301 )(Q 302 )、-C(=O)(Q 301 )、-S(=O) 2 (Q 301 ) or -P(=O)(Q 301 )(Q 302 ),

[0243] xb21 can be an integer from 1 to 5, and

[0244] Q 301 To Q 303 Combined with Q 1 Same as described.

[0245] In one or more embodiments, when xb11 in Formula 301 is 2 or more, two or more Ar 301 The (s) may be linked to each other via a single bond.

[0246] In one or more embodiments, the host may include a compound represented by Formula 301-1, a compound represented by Formula 301-2, or any combination thereof:

[0247] Formula 301-1

[0248]

[0249] Formula 301-2

[0250]

[0251] In Formula 301-1 and Formula 301-2,

[0252] Ring A 301 To Ring A 304 may be each independently unsubstituted or substituted with at least one R10a. 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a Substituted C 1 -C 60 Heterocyclic groups,

[0253] X 301 Can be O, S, N-[(L 304 ) xb4 -R 304 ]、C(R 304 )(R 305 ) or Si(R 304 )(R 305 ),

[0254] xb22 and xb23 can each independently be 0, 1 or 2,

[0255] L 301 , xb1 and R 301 Same as described in this manual,

[0256] L 302 To L 304 Can be combined with L independently 301 Same as described,

[0257] xb2 to xb4 may each independently be the same as described in conjunction with xb1, and

[0258] R 302 To R 305 and R 311 To R 314 Can be combined with R 301 Same as described.

[0259] In one or more embodiments, the host may include an alkaline earth metal complex, a post-transition metal complex, or a combination thereof. In one or more embodiments, the host may include a Be complex (e.g., compound H55), a Mg complex, a Zn complex, or a combination thereof.

[0260] In one or more embodiments, the host may include compounds H1 to H124, 9,10-di(2-naphthyl)anthracene (ADN), 2-methyl-9,10-bis(naphthalene-2-yl)anthracene (MADN), 9,10-di-(2-naphthyl)-2-tert-butyl-anthracene (TBADN), 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP), 1,3-di-9-carbazolylbenzene (mCP), 1,3,5-tri(carbazolyl-9-yl)benzene (TCP), 3,3-di(9H-carbazolyl-9-yl)biphenyl (mCBP), or any combination thereof:

[0261]

[0262]

[0263]

[0264]

[0265]

[0266]

[0267]

[0268]

[0269] Phosphorescent dopants

[0270] In one or more embodiments, the phosphorescent dopant may include at least one transition metal as a central metal.

[0271] The phosphorescent dopant may include a monodentate ligand, a bidentate ligand, a tridentate ligand, a tetradentate ligand, a pentadentate ligand, a hexadentate ligand, or any combination thereof.

[0272] The phosphorescent dopant may be electrically neutral.

[0273] In one or more embodiments, the phosphorescent dopant may include an organometallic compound represented by Formula 401:

[0274] Formula 401

[0275] M(L 401 ) xc1 (L 402 ) xc2

[0276] Formula 402

[0277]

[0278] In equations 401 and 402,

[0279] M may be a transition metal (e.g., iridium (Ir), platinum (Pt), palladium (Pd), osmium (Os), titanium (Ti), gold (Au), hafnium (Hf), europium (Eu), terbium (Tb), rhodium (Rh), rhenium (Re), or thulium (Tm)),

[0280] L 401 may be a ligand represented by formula 402, and xc1 may be 1, 2 or 3, wherein when xc1 is 2 or more, two or more L 401 (s) may be the same as or different from each other,

[0281] L 402 may be an organic ligand, and xc2 may be 0, 1, 2, 3 or 4, and when xc2 is 2 or more, two or more L 402 (s) may be the same as or different from each other,

[0282] X 401 and X 402 may each independently be nitrogen or carbon,

[0283] Ring A 401 and Ring A 402 Can be independently C 3 -C 60 Carbocyclic group or C 1 -C 60 Heterocyclic groups,

[0284] T 401 It can be a single bond, *-O-*', *-S-*', *-C(=O)-*', *-N(Q 411 )-*'、*-C(Q 411 )(Q 412 )-*'、*-C(Q 411 )=C(Q 412)-*'、*-C(Q 411 )=*'、or*=C=*',

[0285] X 403 and X 404 can be each independently a chemical bond (e.g., a covalent bond or a coordination bond), O, S, N (Q 413 )、B(Q 413 )、P(Q 413 )、C(Q 413 )(Q 414 ) or Si(Q 413 )(Q 414 ),

[0286] Q 411 To Q 414 Combined with Q 1 Same as described,

[0287] R 401 and R 402 can be independently hydrogen, deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, a nitro group, unsubstituted or substituted with at least one R 10a Substituted C 1 -C 20 Alkyl group, unsubstituted or substituted with at least one R 10a Substituted C 1 -C 20 Alkoxy groups, unsubstituted or substituted with at least one R 10a Substituted C 3 -C 60 A carbocyclic group, unsubstituted or substituted with at least one R 10a Substituted C 1 -C 60 Heterocyclic group, -Si(Q 401 )(Q 402 )(Q 403 )、-N(Q 401 )(Q 402 )、-B(Q 401 )(Q 402 )、-C(=O)(Q 401 )、-S(=O) 2 (Q 401 ) or -P(=O)(Q 401 )(Q 402 ),

[0288] Q 401 To Q 403 Combined with Q 1 Same as described,

[0289] xc11 and xc12 may each independently be an integer from 0 to 10, and

[0290] * and *' in Formula 402 each represent a binding site with M in Formula 401.

[0291] In one or more embodiments, in formula 402, i) X 401 is nitrogen, and X 402 is carbon, or ii) X 401 and X 402 Each of them is nitrogen.

[0292] In one or more embodiments, when xc1 in equation 401 is 2 or more, two or more L 401 (s) two rings A 401 Optionally, T 402 Connect to each other, T 402 is a connecting group, and the two rings A 402 Optionally, T 403 Connect to each other, T 403 is a linking group (see compounds PD1 to PD4 and PD7). 402 and T 403 Combined with T 401 Same as described.

[0293] L in Formula 401 402 Can be an organic ligand. In one or more embodiments, L 402 It may include a halogen group, a diketone group (e.g., an acetylacetonate group), a carboxylic acid group (e.g., a picolinate group), -C(=O), an isonitrile group, a -CN group, a phosphorus group (e.g., a phosphine group, a phosphite group, etc.), or any combination thereof.

[0294] The phosphorescent dopant may include, for example, one of compounds PD1 to PD25 or any combination thereof:

[0295]

[0296]

[0297] Fluorescent dopants

[0298] The fluorescent dopant may include an amine group-containing compound, a styrene group-containing compound, or any combination thereof.

[0299] In one or more embodiments, the fluorescent dopant may include a compound represented by Formula 501:

[0300] Formula 501

[0301]

[0302] Wherein, in Formula 501,

[0303] Ar 501 , L 501 To L 503 , R 501 and R 502 may be independently unsubstituted or substituted with at least one R 10a Substituted C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a Substituted C 1 -C 60 Heterocyclic groups,

[0304] xd1 to xd3 may each independently be 0, 1, 2 or 3, and

[0305] xd4 can be 1, 2, 3, 4, 5 or 6.

[0306] In one or more embodiments, Ar in Formula 501 501 It may be a fused ring group in which three or more monocyclic groups are fused together (e.g., anthracene group, group or pyrene group).

[0307] In one or more embodiments, xd4 in equation 501 may be 2.

[0308] In one or more embodiments, the fluorescent dopant may include: one of compounds FD1 to FD36; DPVBi; DPAVBi; or any combination thereof:

[0309]

[0310]

[0311]

[0312] Delayed fluorescence material

[0313] The emission layer 133 may include a delayed fluorescent material.

[0314] In the present specification, the delayed fluorescent material may be selected from compounds capable of emitting delayed fluorescence based on a delayed fluorescence emission mechanism.

[0315] The delayed fluorescent material included in the emission layer 133 may serve as a host or a dopant depending on the kind (eg, type) of other materials included in the emission layer 133 .

[0316] In one or more embodiments, the difference between the triplet energy level (eV) of the delayed fluorescent material and the singlet energy level (eV) of the delayed fluorescent material may be greater than or equal to 0 eV and less than or equal to 0.5 eV. When the difference between the triplet energy level (eV) of the delayed fluorescent material and the singlet energy level (eV) of the delayed fluorescent material satisfies the above range, the delayed fluorescent material converted from the triplet state to the singlet state can be effectively generated, and thus the emission efficiency of the light emitting device 10 can be improved.

[0317] In one or more embodiments, the delayed fluorescent material may include: i) a material including at least one electron donor (eg, a π-electron-rich C 3 -C 60 cyclic groups, such as carbazole groups) and at least one electron acceptor (e.g., sulfoxide groups, cyano groups and / or π-electron-deficient nitrogen-containing C 1 -C 60 cyclic group), and ii) including C 8 -C 60 Polycyclic materials, in the C 8 -C 60 In the polycyclic group, two or more cyclic groups are fused while sharing boron (B).

[0318] In one or more embodiments, the delayed fluorescent material may include at least one of the following compounds DF1 to DF9:

[0319]

[0320]

[0321] quantum dots

[0322] In one or more embodiments, the emission layer 133 may include quantum dots.

[0323] In this specification, a quantum dot refers to a crystal of a semiconductor compound, and may include any material capable of emitting light of various suitable emission wavelengths according to the size of the crystal.

[0324] The diameter of a quantum dot may be in the range of, for example, about 1 nm to about 10 nm.

[0325] Quantum dots can be synthesized by a wet chemical process, a metal organic chemical vapor deposition process, a molecular beam epitaxy process, or any process similar thereto.

[0326] According to the wet chemical process, the precursor material is mixed with an organic solvent to grow quantum dot particle crystals. When the crystal grows, the organic solvent naturally acts as a dispersant coordinated on the surface of the quantum dot crystal and controls the growth of the crystal, making it possible to control the growth of quantum dot particles by a process that is easier to perform than a vapor deposition method, such as metal organic chemical vapor deposition (MOCVD) and / or molecular beam epitaxy (MBE), and this requires low cost.

[0327] The quantum dots may include Group II-VI semiconductor compounds, Group III-V semiconductor compounds, Group III-VI semiconductor compounds, Group I-III-VI semiconductor compounds, Group IV-VI semiconductor compounds, Group IV elements or compounds, or any combination thereof.

[0328] Examples of II-VI semiconductor compounds may include binary compounds such as CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, and / or MgS; ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe , CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe and / or MgZnS; quaternary compounds such as, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and / or HgZnSTe; or any combination thereof.

[0329] Examples of III-V semiconductor compounds may include binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs and / or InSb, etc.; ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs and / or InPSb, etc.; quaternary compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and / or InAlPSb, etc.; or any combination thereof. In one or more embodiments, the III-V semiconductor compound may further include a Group II element. Examples of the Group III-V semiconductor compound also including the Group II element may include InZnP, InGaZnP, InAlZnP, and the like.

[0330] Examples of III-VI semiconductor compounds may include binary compounds such as GaS, GaSe, Ga 2 Se 3 、GaTe、InS、InSe、In 2 S 3 、In 2 Se 3 and / or InTe; ternary compounds such as InGaS 3 and / or InGaSe 3 ; or any combination thereof.

[0331] Examples of Group I-III-VI semiconductor compounds may include ternary compounds such as AgInS, AgInS 2 、CuInS、CuInS 2 、CuGaO 2 、AgGaO 2 and / or AgAlO 2 ; or any combination thereof.

[0332] Examples of IV-VI semiconductor compounds may include binary compounds such as SnS, SnSe, SnTe, PbS, PbSe and / or PbTe; ternary compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe and / or SnPbTe; quaternary compounds such as SnPbSSe, SnPbSeTe and / or SnPbSTe; or any combination thereof.

[0333] The Group IV elements or compounds may include single element compounds, such as Si and / or Ge; binary compounds, such as SiC and / or SiGe; or any combination thereof.

[0334] Each element included in the multi-element compound such as the binary compound, the ternary compound, and / or the quaternary compound may be present in the particle at a uniform concentration or a non-uniform concentration.

[0335] In one or more embodiments, the quantum dot may have a single structure or a dual core-shell structure. In the case where the quantum dot has a single structure, the concentration of each element included in the corresponding quantum dot is uniform. In one or more embodiments, the material included in the core and the material included in the shell may be different from each other.

[0336] The shell of the quantum dot can be used as a protective layer to prevent or reduce chemical degradation of the core to maintain semiconductor properties and / or as a charging layer to give the quantum dot electrophoretic properties. The shell can be a single layer or multiple layers. The elements present at the interface between the core and the shell can have a concentration gradient that decreases toward the center of the quantum dot.

[0337] Examples of the shell of a quantum dot may be oxides of metals, metalloids and / or non-metals, semiconductor compounds, or any combination thereof. Examples of oxides of metals, metalloids and / or non-metals may include binary compounds such as SiO 2 、Al 2 O 3 、TiO 2 、ZnO、MnO、Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 and / or NiO; ternary compounds such as MgAl 2 O 4 、CoFe 2 O 4、NiFe 2 O 4 and / or CoMn 2 O 4 ; or any combination thereof. Examples of semiconductor compounds may include II-VI semiconductor compounds as described herein; III-V semiconductor compounds; III-VI semiconductor compounds; I-III-VI semiconductor compounds; IV-VI semiconductor compounds; or any combination thereof. In one or more embodiments, the semiconductor compound may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.

[0338] The full width at half maximum (FWHM) of the emission wavelength spectrum of the quantum dots can be about 45nm or less, for example, about 40nm or less, for example, about 30nm or less, and within these ranges, color purity and / or color gamut (e.g., color reproducibility) can be increased. In addition, because the light emitted by the quantum dots is emitted in all directions, the wide viewing angle can be improved.

[0339] In one or more embodiments, the quantum dots may be spherical particles, conical particles, multi-arm particles, cubic nanoparticles, nanotubes, nanowires, nanofibers, and / or nanosheets.

[0340] Because the energy band gap can be adjusted by controlling the size of the quantum dots, light with various suitable wavelengths can be obtained from the quantum dot emission layer. Therefore, by using quantum dots of different sizes, a light-emitting device that emits light of various suitable wavelengths can be realized. In one or more embodiments, the size of the quantum dots can be selected to emit red light, green light, and / or blue light. In one or more embodiments, the size of the quantum dots can be configured to emit white light by combining various suitable colors of light.

[0341] The electron transport region 135 in the intermediate layer 130

[0342] The electron transport region 135 may have: i) a single-layer structure consisting of a single layer consisting of a single material, ii) a single-layer structure including (e.g., consisting of) a single layer including (e.g., consisting of) a single layer including (e.g., consisting of) a plurality of different materials, or iii) a multi-layer structure including a plurality of layers containing different materials.

[0343] The electron transport region 135 may include a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, an electron injection layer, or any combination thereof.

[0344] In one or more embodiments, the electron transport region 135 may have an electron transport layer / electron injection layer structure, a hole blocking layer / electron transport layer / electron injection layer structure, an electron control layer / electron transport layer / electron injection layer structure, or a buffer layer / electron transport layer / electron injection layer structure, wherein, for each structure, the constituent layers are stacked in sequence from the emission layer 133 in the order stated respectively.

[0345] In one or more embodiments, the electron transport region 135 (e.g., a buffer layer, a hole blocking layer, an electron control layer, and / or an electron transport layer in the electron transport region 135) may include a metal-free compound including at least one π-electron-deficient nitrogen-containing C 1 -C 60 Cyclic group.

[0346] In one or more embodiments, the electron transport region 135 may include a compound represented by the following Formula 601:

[0347] Formula 601

[0348] [Ar 601 ] xe11 -[(L 601 ) xe1 -R 601 ] xe21

[0349] Wherein, in Formula 601,

[0350] Ar 601 and L 601 may be independently unsubstituted or substituted with at least one R 10a Substituted C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a Substituted C 1 -C 60 Heterocyclic groups,

[0351] xe11 can be 1, 2 or 3,

[0352] xe1 can be 0, 1, 2, 3, 4, or 5,

[0353] R 601 may be unsubstituted or substituted with at least one R 10a Substituted C 3 -C 60 A carbocyclic group, unsubstituted or substituted with at least one R 10a Substituted C 1 -C 60 Heterocyclic group, -Si(Q 601 )(Q 602 )(Q603 )、-C(=O)(Q 601 )、-S(=O) 2 (Q 601 ) or -P(=O)(Q 601 )(Q 602 ),

[0354] Q 601 To Q 603 Combined with Q 1 Same as described,

[0355] xe21 can be 1, 2, 3, 4 or 5,

[0356] Ar 601 , L 601 or R 601 At least one of them may be independently unsubstituted or substituted with at least one R 10a Substituted π-electron-deficient nitrogen-containing C 1 -C 60 Cyclic group.

[0357] In one or more embodiments, when xe11 in Formula 601 is 2 or more, two or more Ar 601 (s) can be connected via a single bond.

[0358] In one or more embodiments, Ar in Formula 601 601 The anthracene group may be substituted or unsubstituted.

[0359] In one or more embodiments, the electron transport region 135 may include a compound represented by Formula 601-1:

[0360] Formula 601-1

[0361]

[0362] In formula 601-1,

[0363] X 614 Can be N or C (R 614 ), X 615 Can be N or C (R 615 ), X 616 Can be N or C (R 616 ), X 614 To X 616 At least one of may be N,

[0364] L 611 To L 613 Combined with L 601 Same as described,

[0365] xe611 to xe613 are the same as described in conjunction with xe1,

[0366] R 611 To R 613 Combined with R 601 Same as described,

[0367] R 614 To R 616 can be independently hydrogen, deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, a nitro group, C 1 -C 20 Alkyl group, C 1 -C 20 Alkoxy groups, unsubstituted or substituted with at least one R 10a Substituted C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a Substituted C 1 -C 60 Heterocyclic group.

[0368] In one or more embodiments, xe1 and xe611 to xe613 in Formula 601 and Formula 601-1 may each independently be 0, 1, or 2.

[0369] The electron transport region 135 may include compounds ET1 to ET45, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), Alq 3 , BAlq, TAZ, NTAZ, diphenyl (4- (triphenylsilyl) phenyl) -phosphine oxide (TSPO1) or any combination thereof:

[0370]

[0371]

[0372]

[0373] The thickness of the electron transport region 135 may be from about 100 angstroms to about 5,000 angstroms, for example, from about 160 angstroms to about 4,000 angstroms. When the electron transport region 135 includes a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, or any combination thereof, the thickness of each of the buffer layer, the hole blocking layer, and the electron control layer may be independently from about 20 angstroms to about 1000 angstroms, for example, from about 30 angstroms to about 300 angstroms, and the thickness of the electron transport layer may be from about 100 angstroms to about 1000 angstroms, for example, from about 150 angstroms to about 500 angstroms. When the thickness of the buffer layer, the hole blocking layer, the electron control layer, and / or the electron transport layer is within these ranges, satisfactory electron transport characteristics may be obtained without significantly increasing the driving voltage.

[0374] The electron transport region 135 (eg, an electron transport layer in the electron transport region 135 ) may further include a metal-containing material in addition to the above-mentioned materials.

[0375] The metal-containing material may include an alkali metal complex, an alkaline earth metal complex or any combination thereof. The metal ion of the alkali metal complex may be a Li ion, a Na ion, a K ion, a Rb ion or a Cs ion, and the metal ion of the alkaline earth metal complex may be a Be ion, a Mg ion, a Ca ion, a Sr ion or a Ba ion. The ligand coordinated with the metal ion of the alkali metal complex or the alkaline earth metal complex may include hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylthiadiazole, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene or any combination thereof.

[0376] In one or more embodiments, the metal-containing material may include a Li complex. The Li complex may include, for example, compounds ET-D1 (LiQ) or ET-D2:

[0377]

[0378] The electron transport region 135 may include an electron injection layer that facilitates electron injection from the second electrode 150. The electron injection layer may directly contact the second electrode 150.

[0379] The electron injection layer may have: i) a single-layer structure consisting of a single layer consisting of a single material, ii) a single-layer structure including (e.g., consisting of) a single layer, the single layer including (e.g., consisting of) a plurality of different materials, or iii) a multi-layer structure including a plurality of layers containing different materials.

[0380] The electron injection layer may include an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth metal compound, a rare earth metal compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof.

[0381] The alkali metal may include Li, Na, K, Rb, Cs, or any combination thereof. The alkaline earth metal may include Mg, Ca, Sr, Ba, or any combination thereof. The rare earth metal may include Sc, Y, Ce, Tb, Yb, Gd, or any combination thereof.

[0382] The alkali metal compound, the alkaline earth metal compound, and the rare earth metal compound may be one or more oxides, halides (e.g., fluorides, chlorides, bromides, or iodides), and / or tellurides of the alkali metal, the alkaline earth metal, and the rare earth metal.

[0383] The alkali metal compound may include one or more alkali metal oxides, such as Li 2 O, Cs 2 O, and / or K 2 O, alkali metal halides, such as LiF, NaF, CsF, KF, LiI, NaI, CsI, and / or KI, or any combination thereof. The alkaline earth metal compound may include alkaline earth metal compounds (e.g., oxides), such as BaO, SrO, CaO, Ba x Sr 1-x O (x is a real number satisfying the condition 0 < x < 1) and / or Ba x Ca 1-x O (x is a real number satisfying the condition 0 < x < 1), etc. The rare earth metal compound may include YbF 3 、ScF 3 、Sc 2 O 3 、Y 2 O 3 、Ce 2 O 3 、GdF 3 、TbF 3 、YbI 3 、ScI 3 、TbI 3 or any combination thereof. In one or more embodiments, the rare earth metal compound may include lanthanide metal tellurides. Examples of lanthanide metal tellurides may include LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La 2 Te 3 、Ce 2 Te3 , Pr 2 Te 3 、Nd 2 Te 3 、Pm 2 Te 3 、Sm 2 Te 3 、Eu 2 Te 3 , Gd 2 Te 3 , Tb 2 Te 3 、Dy 2 Te 3 、Ho 2 Te 3 , Er 2 Te 3 、Tm 2 Te 3 , Yb 2 Te 3 He Lu 2 Te 3 .

[0384] The alkali metal complex, alkaline earth metal complex and rare earth metal complex may include i) one of the ions of an alkali metal, an alkaline earth metal and a rare earth metal, and ii) as a ligand bound to the metal ion, such as hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene or any combination thereof.

[0385] As described above, the electron injection layer may include (e.g., consist of) an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof. In one or more embodiments, the electron injection layer may further include an organic material (e.g., a compound represented by Formula 601).

[0386] In one or more embodiments, the electron injection layer may include (e.g., consist of) i) an alkali metal compound (e.g., an alkali metal halide), or ii) a) an alkali metal compound (e.g., an alkali metal halide); and b) an alkali metal, an alkaline earth metal, a rare earth metal, or any combination thereof. In one or more embodiments, the electron injection layer may be a KI:Yb co-deposition layer and / or a RbI:Yb co-deposition layer, etc.

[0387] When the electron injection layer also includes organic materials, alkali metals, alkaline earth metals, rare earth metals, alkali metal-containing compounds, alkaline earth metal-containing compounds, rare earth metal-containing compounds, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes or any combination thereof can be uniformly or non-uniformly dispersed in the matrix including the organic material.

[0388] The thickness of the electron injection layer may be in the range of about 1 angstrom to about 100 angstroms, and, for example, about 3 angstroms to about 90 angstroms. When the thickness of the electron injection layer is within the above range, the electron injection layer may have satisfactory electron injection characteristics without significantly increasing the driving voltage.

[0389] The second electrode 150

[0390] The second electrode 150 may be located on the intermediate layer 130 having the structure according to the embodiment of the present disclosure. The second electrode 150 may be a cathode of an electron injection electrode, and may use metals, alloys, conductive compounds, or any combination thereof each having a low work function as a material for the second electrode 150.

[0391] In one or more embodiments, the second electrode 150 may include lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), ytterbium (Yb), silver-ytterbium (Ag-Yb), ITO, IZO, or a combination thereof. The second electrode 150 may be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode.

[0392] The second electrode 150 may have a single-layer structure or a multi-layer structure including two or more layers.

[0393] Covering

[0394] The first cover layer may be located outside the first electrode 110, and / or the second cover layer may be located outside the second electrode 150. In one or more embodiments, the light emitting device 10 may have a structure in which the first cover layer, the first electrode 110, the intermediate layer 130, and the second electrode 150 are sequentially stacked in the stated order, a structure in which the first electrode 110, the intermediate layer 130, the second electrode 150, and the second cover layer are sequentially stacked in the stated order, or a structure in which the first cover layer, the first electrode 110, the intermediate layer 130, the second electrode 150, and the second cover layer are sequentially stacked in the stated order.

[0395] Light generated in the emission layer 133 of the intermediate layer 130 of the light-emitting device 10 can be extracted (e.g., emitted) to the outside through the first electrode 110 which is a semi-transmissive electrode or a transmissive electrode and the first covering layer, and / or light generated in the emission layer 133 of the intermediate layer 130 of the light-emitting device 10 can be extracted (e.g., emitted) to the outside through the second electrode 150 which is a semi-transmissive electrode or a transmissive electrode and the second covering layer.

[0396] According to the principle of constructive interference, the first cover layer and the second cover layer can increase the external emission efficiency. Therefore, the light extraction efficiency of the light emitting device 10 is increased, so that the emission efficiency of the light emitting device 10 can be improved.

[0397] Each of the first cover layer and the second cover layer may include a material having a refractive index (at 589 nm) of 1.6 or more.

[0398] The first covering layer and the second covering layer may each independently be an organic covering layer including an organic material, an inorganic covering layer including an inorganic material, or a composite covering layer including an organic material and an inorganic material.

[0399] At least one selected from the first cover layer and the second cover layer may each independently include a carbocyclic compound, a heterocyclic compound, an amine group-containing compound, a porphyrin derivative, a phthalocyanine derivative, a naphthalocyanine derivative, an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The carbocyclic compound, the heterocyclic compound and / or the amine group-containing compound may be optionally substituted with a substituent containing O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof. In one or more embodiments, at least one of the first cover layer or the second cover layer may each independently include an amine group-containing compound.

[0400] In one or more embodiments, at least one of the first cover layer and the second cover layer may each independently include the compound represented by Formula 201, the compound represented by Formula 202, or any combination thereof.

[0401] In one or more embodiments, at least one of the first cover layer and the second cover layer may each independently include one of compounds HT28 to HT33, one of compounds CP1 to CP6, β-NPB, or any combination thereof:

[0402]

[0403] Electronic devices

[0404] The light emitting device may be included in various suitable electronic devices. In one or more embodiments, the electronic device including the light emitting device may be a light emitting device and / or an authentication device, etc.

[0405] In addition to the light emitting device, the electronic device (e.g., light emitting device) may also include i) a color filter, ii) a color conversion layer, or iii) a color filter and a color conversion layer. The color filter and / or the color conversion layer may be located in at least one direction of travel of the light emitted from the light emitting device. In one or more embodiments, the light emitted from the light emitting device may be blue light or white light. The light emitting device may be the same as described above. In one or more embodiments, the color conversion layer may include quantum dots. The quantum dots may be, for example, a quantum dot material as described herein.

[0406] The electronic device may include a first substrate. The first substrate may include a plurality of sub-pixel regions, the color filter may include a plurality of color filter regions respectively corresponding to the sub-pixel regions, and the color conversion layer may include a plurality of color conversion regions respectively corresponding to the sub-pixel regions.

[0407] A pixel defining film may be located between (eg, between) the sub-pixel regions to define each of the sub-pixel regions.

[0408] The color filter may further include a plurality of color filter regions and a light shielding pattern located between (eg, between) the color filter regions, and the color conversion layer may include a plurality of color conversion regions and a light shielding pattern located between (eg, between) the color conversion regions.

[0409] The color filter region (or color conversion region) may include a first region emitting a first color light, a second region emitting a second color light, and / or a third region emitting a third color light, and the first color light, the second color light, and / or the third color light may have different maximum emission wavelengths from each other. In one or more embodiments, the first color light may be red light, the second color light may be green light, and the third color light may be blue light. In one or more embodiments, the color filter region (or color conversion region) may include quantum dots. For example, the first region may include red quantum dots, the second region may include green quantum dots, and the third region may not include quantum dots. The quantum dots are the same as described in the present specification. The first region, the second region, and / or the third region may each further include a scatterer (e.g., a scatterer).

[0410] In one or more embodiments, the light emitting device may emit a first light, the first region may absorb the first light to emit a first-first color light, the second region may absorb the first light to emit a second-first color light, and the third region may absorb the first light to emit a third-first color light. In this regard, the first-first color light, the second-first color light, and the third-first color light may have different maximum emission wavelengths. For example, the first light may be blue light, the first-first color light may be red light, the second-first color light may be green light, and the third-first color light may be blue light.

[0411] In addition to the light emitting device described above, the electronic device may further include a thin film transistor. The thin film transistor may include a source electrode, a drain electrode and an active layer, wherein one of the source electrode and the drain electrode may be electrically connected to one of the corresponding first electrode or second electrode of the light emitting device.

[0412] The thin film transistor may further include a gate electrode, a gate insulating film, and the like.

[0413] The active layer may include crystalline silicon, amorphous silicon, an organic semiconductor, and / or an oxide semiconductor, etc.

[0414] The electronic device may further include a sealing portion for sealing the light emitting device. The sealing portion and / or the color conversion layer may be placed between the color filter and the light emitting device. The sealing portion allows light from the light emitting device to be extracted to the outside while (or at the same time) preventing or reducing the penetration of ambient air and moisture into the light emitting device. The sealing portion may be a sealing substrate including a transparent glass substrate and / or a plastic substrate. The sealing portion may be a thin film encapsulation layer including at least one of an organic layer and / or an inorganic layer. When the sealing portion is a thin film encapsulation layer, the electronic device may be flexible.

[0415] In addition to the color filter and / or color conversion layer, various suitable functional layers may be additionally located on the sealing portion depending on the purpose of the electronic device. The functional layer may include a touch screen layer and / or a polarization layer, etc. The touch screen layer may be a pressure-sensitive touch screen layer, a capacitive touch screen layer, and / or an infrared touch screen layer. The authentication device may be, for example, a biometric authentication device that authenticates an individual by utilizing biological information of a living body (e.g., a fingertip, a pupil, etc.).

[0416] In addition to the light emitting device, the authentication device may also include a biometric information collector.

[0417] The electronic device can be applied to various suitable displays, light sources, lighting, personal computers (e.g., mobile personal computers), mobile phones, digital cameras, electronic notepads, electronic dictionaries, electronic game consoles, medical equipment (e.g., electronic thermometers, blood pressure meters, blood glucose meters, pulse measuring devices, pulse wave measuring devices, electrocardiogram displays, ultrasonic diagnostic devices and / or endoscope displays), fish finders, various suitable measuring instruments, meters (e.g., meters for vehicles, aircraft and / or ships) and projectors, etc.

[0418] Figure 3 and Figure 4 Description

[0419] Figure 3 is a sectional view showing a light emitting device according to an embodiment.

[0420] Figure 3The light emitting apparatus includes a substrate 100, a thin film transistor (TFT), a light emitting device, and a packaging portion 300 sealing the light emitting device.

[0421] The substrate 100 may be a flexible substrate, a glass substrate, or a metal substrate. The buffer layer 210 may be formed on the substrate 100. The buffer layer 210 may prevent or reduce the penetration of impurities through the substrate 100 and may provide a flat surface on the substrate 100.

[0422] A thin film transistor (TFT) may be located on the buffer layer 210. The thin film transistor (TFT) may include an active layer 220, a gate electrode 240, a source electrode 260, and a drain electrode 270.

[0423] The active layer 220 may include an inorganic semiconductor such as silicon and / or polysilicon, an organic semiconductor, and / or an oxide semiconductor, and may include a source region, a drain region, and a channel region.

[0424] A gate insulating film 230 for insulating the active layer 220 from the gate electrode 240 may be located on the active layer 220 , and the gate electrode 240 may be located on the gate insulating film 230 .

[0425] Interlayer insulating film 250 is located on gate electrode 240. Interlayer insulating film 250 may be placed between gate electrode 240 and source electrode 260 to insulate gate electrode 240 from source electrode 260 and between gate electrode 240 and drain electrode 270 to insulate gate electrode 240 from drain electrode 270.

[0426] The source electrode 260 and the drain electrode 270 may be located on the interlayer insulating film 250. The interlayer insulating film 250 and the gate insulating film 230 may be formed to expose the source and drain regions of the active layer 220, and the source electrode 260 and the drain electrode 270 may contact the exposed portions of the source and drain regions of the active layer 220.

[0427] A thin film transistor (TFT) is electrically connected to the light emitting device to drive the light emitting device, and is covered by a passivation layer 280. The passivation layer 280 may include an inorganic insulating film, an organic insulating film, or a combination thereof. The light emitting device is provided on the passivation layer 280. The light emitting device may include a first electrode 110, an intermediate layer 130, and a second electrode 150.

[0428] The first electrode 110 may be formed on the passivation layer 280. The passivation layer 280 does not completely cover the drain electrode 270 and exposes a portion of the drain electrode 270, and the first electrode 110 is connected to the exposed portion of the drain electrode 270.

[0429] A pixel defining layer 290 including an insulating material may be located on the first electrode 110. The pixel defining layer 290 exposes a region of the first electrode 110, and the intermediate layer 130 may be formed in the exposed region of the first electrode 110. The pixel defining layer 290 may be a polyimide and / or polyacrylic organic film. In one or more embodiments, at least some layers of the intermediate layer 130 may extend beyond the upper portion of the pixel defining layer 290 and may thus be positioned in the form of a common layer.

[0430] The second electrode 150 may be positioned on the intermediate layer 130, and a capping layer 170 may be additionally formed on the second electrode 150. The capping layer 170 may be formed to cover the second electrode 150.

[0431] The encapsulation portion 300 may be located on the cover layer 170. The encapsulation portion 300 may be located on the light emitting device to protect the light emitting device from moisture and / or oxygen. The encapsulation portion 300 may include: an inorganic film including silicon nitride (SiNx), silicon oxide (SiOx), indium tin oxide, indium zinc oxide, or any combination thereof; an organic film including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polysulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, acrylic resin (e.g., polymethyl methacrylate and / or polyacrylic acid, etc.), epoxy resin (e.g., and / or aliphatic glycidyl ether (AGE), etc.), or a combination thereof; or a combination of an inorganic film and an organic film.

[0432] Figure 4 is a sectional view showing a light emitting device according to an embodiment of the present disclosure.

[0433] In addition to the light shielding pattern 500 and the functional area 400 additionally located on the packaging portion 300, Figure 4 Light emitting devices and Figure 3 The functional area 400 may be i) a color filter area, ii) a color conversion area, or iii) a combination of a color filter area and a color conversion area. In one or more embodiments, the functional area 400 may be i) a color filter area, ii) a color conversion area, or iii) a combination of a color filter area and a color conversion area. Figure 4 The light emitting devices in the light emitting apparatus may be series light emitting devices.

[0434] Each layer included in the hole transport region, the emission layer and the electron transport region can be formed in a specific region by using one or more suitable methods selected from vacuum deposition, spin coating, casting, Langmuir-Buget (LB) deposition, inkjet printing, laser printing and laser induced thermal imaging (LITI).

[0435] When the layers constituting the hole transport region 131, the emission layer 133, and the layers constituting the electron transport region 135 are formed by vacuum deposition, the deposition may be performed at a deposition temperature of about 100° C. to about 500° C. for about 10 -8 Up to about 10 -3 The deposition is performed at a vacuum degree of 1000 torr and a deposition rate of about 0.01 angstroms / second to about 100 angstroms / second.

[0436] Terminology Definition

[0437] As used herein, the term "C 3 -C 60 A "carbocyclic group" refers to a cyclic group consisting only of carbon atoms as ring atoms and having three to sixty carbon atoms, and the term "C 1 -C 60 The term "heterocyclic group" refers to a cyclic group having from one to sixty carbon atoms and having at least one heteroatom as a ring-forming atom in addition to carbon. 3 -C 60 Carbocyclic groups and C 1 -C 60 The heterocyclic groups may each independently be a monocyclic group, and the monocyclic group includes (for example, a polycyclic group consisting of one ring or two or more rings fused to each other) one ring or two or more rings fused to each other. 1 -C 60 The number of ring atoms of the heterocyclic group may be from 3 to 61.

[0438] As used herein, a "cyclic group" may include C 3 -C 60 Carbocyclic groups and C 1 -C 60 Heterocyclic group.

[0439] As used herein, the term "π-electron-rich C 3 -C 60 The term "cyclic group" refers to a cyclic group having three to sixty carbon atoms and not including *-N=*' as a ring-forming part, and the term "π-electron-deficient nitrogen-containing C 1 -C 60 The term "cyclic group" refers to a heterocyclic group having one to sixty carbon atoms and including *-N=*' as a ring-forming part.

[0440] For example,

[0441] C 3 -C 60 A carbocyclic group may be i) a group T1 or ii) a group in which two or more groups T1 are mutually adjacent (e.g.3 -C 60 The carbocyclic group may be a cyclopentadiene group, an adamantane group, a norbornane group, a phenyl group, a pentalene group, a naphthalene group, an azulene group, an indacene group, an acenaphthene group, a phenanthrenyl group, an anthracene group, a fluoranthene group, a benzo[9,10]phenanthrene group, a pyrene group, a fused ring group condensed with an indene group, a fluorene group, a spirobifluorene group, a benzofluorene group, an indenophenanthrene group and / or an indenoanthracene group),

[0442] C 1 -C 60 The heterocyclic group may be i) a group T2, ii) a fused ring group in which two or more groups T2 are fused to each other, or iii) a group in which at least one group T2 and at least one group T1 are fused to each other (for example, the C1-C60 heterocyclic group may be a pyrrole group, a thiophene group, a furan group, an indole group, a benzindole group, a naphthoindole group, an isoindole group, a benzisoindole group, a naphthoisoindole group, a benzothiole group, a benzothiophene ... phenyl group, benzofuran group, carbazole group, dibenzosilole group, dibenzothiophene group, dibenzofuran group, indenocarbazole group, indolecarbazole group, benzofurancarbazole group, benzothiophenecarbazole group, benzosilolecarbazole group, benzoindolecarbazole group, benzocarbazole group, benzonaphthofuran group, benzonaphthothiophene group, benzonaphthosilole group, benzofurandibenzothiophene group, benzofurandibenzo thiophene group, benzothienodibenzothiophene group, pyrazole group, imidazole group, triazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiazole group, thiadiazole group, benzopyrazole group, benzimidazole group, benzoxazole group, benzisoxazole group, benzosilole group, benzisothiazole group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, quinoline group, isoquinoline group, benzoquinoline group a condensed ring group comprising an oxadiazole group, ...

[0443] Pi-electron-rich C 3 -C 60The cyclic group may be i) a group T1, ii) a fused ring group in which two or more groups T1 are fused to each other, iii) a group T3, iv) a fused ring group in which two or more groups T3 are fused to each other, or v) a group in which at least one group T3 and at least one group T1 are fused to each other (e.g., a π-electron-rich C 3 -C 60 The cyclic group can be C 3 -C 60 a condensed ring group comprising a carbocyclic group, a pyrrole group, a thiophene group, a furan group, an indole group, a benzoindole group, a naphthoindole group, an isoindole group, a benzisoindole group, a naphthoisoindole group, a benzothiorrole group, a benzothiophene group, a benzofuran group, a carbazole group, a dibenzothiorrole group, a dibenzothiophene group, a dibenzofuran group, an indenocarbazole group, an indolecarbazole group, a benzofuranocarbazole group, a benzothiophenocarbazole group, a benzothiorrolecarbazole group, a benzoindolecarbazole group, a benzocarbazole group, a benzonaphthofuran group, a benzonaphthothiophene group, a benzonaphthothiorrole group, a benzofurandibenzofuranyl group, a benzofurandibenzothiophene group, a benzothiophenedibenzothiophene group, etc.,

[0444] π-electron-deficient nitrogen-containing C 1 -C 60 The cyclic group may be i) a group T4, ii) a fused ring group in which two or more groups T4 are fused to each other, iii) a fused ring group in which at least one group T4 and at least one group T1 are fused to each other, iv) a fused ring group in which at least one group T4 and at least one group T3 are fused to each other, or v) a fused ring group in which at least one group T4, at least one group T1 and at least one group T3 are fused to each other (e.g., a π-electron-deficient nitrogen-containing C 1 -C 60 The cyclic group may be a pyrazole group, an imidazole group, a triazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, a benzopyrazole group, a benzimidazole group, a benzoxazole group, a benzisoxazole group, a benzothiazole group, a benzisothiazole group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, a quinoline group, an isoquinoline group, a benzoquinoline group, a benzoisoquinoline group, a quinoxaline group, a benzoquinoxaline group, a quinazoline group, a benzoquinazoline group, a phenanthroline group, a cinnoline group, a phthalazine group, a naphthyridine group, an imidazopyridine group, an imidazopyrimidine group, an imidazotriazine group, an imidazopyrazine group, an imidazopyridazine group, an azacarbazole group, an azafluorene group, an azadibenzosilole group, an azadibenzothiophene group, an azadibenzofuran group, and the like.)

[0445] The group T1 can be a cyclopropane group, a cyclobutane group, a cyclopentane group, a cyclohexane group, a cycloheptane group, a cyclooctane group, a cyclobutene group, a cyclopentene group, a cyclopentadiene group, a cyclohexene group, a cyclohexadiene group, a cycloheptene group, an adamantane group, a norbornane group (or a bicyclo[2.2.1]heptane), a norbornene group, a bicyclo[1.1.1]pentane group, a bicyclo[2.1.1]hexane group, a bicyclo[2.2.2]octane group or a phenyl group,

[0446] The group T2 can be a furan group, a thiophene group, a 1H-pyrrole group, a thiol group, a borocyclopentadiene group, a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazole group, a triazole group, a tetrazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, an azathiol group, an azaborole group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group or a tetrazine group,

[0447] The group T3 may be a furan group, a thiophene group, a 1H-pyrrole group, a thiole group or a borole group, and

[0448] The group T4 can be a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazole group, a triazole group, a tetrazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, an azathiazole group, an azaborole group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group or a tetrazine group.

[0449] Depending on the structure of the formula in conjunction with the term used, the terms "cyclic group", "C 3 -C 60 Carbocyclic group", "C 1 -C 60 Heterocyclic groups", "π-electron-rich C 3 -C 60 Cyclic groups" and / or "π-electron-deficient nitrogen-containing C 1 -C 60 The "cyclic group" may refer to a group fused to any suitable cyclic group or multivalent group (e.g., a divalent group, a trivalent group, a tetravalent group, etc.). In one or more embodiments, the "phenyl group" may be a benzo group, a phenyl group and / or a phenylene group, etc., which can be easily understood by a person of ordinary skill in the art based on the structure of the formula including the "phenyl group".

[0450] One Price C 3 -C 60 Carbocyclic groups and monovalent C 1 -C 60 Examples of heterocyclic groups may include C3 -C 10 Cycloalkyl group, C 1 -C 10 Heterocycloalkyl group, C 3 -C 10 Cycloolefin group, C 1 -C 10 Heterocycloolefin group, C 6 -C 60 Aryl group, C 1 -C 60 heteroaromatic groups, monovalent nonaromatic fused polycyclic groups and monovalent nonaromatic fused heteropolycyclic groups, and divalent C 3 -C 60 Carbocyclic groups and divalent C 1 -C 60 Examples of heterocyclic groups may include C 3 -C 10 Cycloalkylene group, C 1 -C 10 Heterocyclic alkylene group, C 3 -C 10 Cycloalkenylene group, C 1 -C 10 Heterocycloalkenylene group, C 6 -C 60 Arylene group, C 1 -C 60 heteroarylene group, a divalent non-aromatic condensed polycyclic group and a divalent non-aromatic condensed heteropolycyclic group.

[0451] As used herein, the term "C 1 -C 60 The term “alkyl group” refers to a linear or branched aliphatic hydrocarbon monovalent group having one to sixty carbon atoms, and examples of the group may include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, an isobutyl group, a tert-butyl group, an n-pentyl group, a tert-pentyl group, a neopentyl group, an isopentyl group, a sec-pentyl group, a 3-pentyl group, a sec-isopentyl group, an n-hexyl group, an isohexyl group, a sec-hexyl group, a tert-hexyl group, an n-heptyl group, an isoheptyl group, a sec-heptyl group, a tert-heptyl group, an n-octyl group, an isooctyl group, a sec-octyl group, a tert-octyl group, an n-nonyl group, an isononyl group, a sec-nonyl group, a tert-nonyl group, an n-decyl group, an isodecyl group, a sec-decyl group, and a tert-decyl group. As used herein, the term “C 1 -C 60 "Alkylene group" refers to a 1 -C 60 A divalent group with the same structure as an alkyl group.

[0452] As used herein, the term "C 2 -C 60 The term "alkene group" refers to a 2-C 60 The alkyl group is a monovalent hydrocarbon group having at least one carbon-carbon double bond in the middle and / or at the end, and examples of the group may include a vinyl group, a propylene group, and a butylene group. As used herein, the term “C 2 -C 60 "Alkenylene group" refers to a group having 2 -C 60 A divalent group having the same structure as an alkene group.

[0453] As used herein, the term "C 2 -C 60 "Alkynyl group" means a 2 -C 60 The alkyl group is a monovalent hydrocarbon group having at least one carbon-carbon triple bond in the middle and / or at the end, and examples of the group may include an acetylene group and a propynylene group. As used herein, the term “C 2 -C 60 "Alkyne group" refers to a 2 -C 60 A divalent group of the same structure as an alkynyl group.

[0454] As used herein, the term "C 1 -C 60 "Alkoxy group" refers to -OA 101 (A 101 C 1 -C 60 An alkyl group) is a monovalent group, and examples of the group may include a methoxy group, an ethoxy group, and an isopropoxy group.

[0455] As used herein, the term "C 3 -C 10 The term "cycloalkyl group" refers to a monovalent saturated hydrocarbon ring group having 3 to 10 carbon atoms, and examples of the group may include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, an adamantyl group, a norbornyl group (or a bicyclo[2.2.1]heptyl group), a bicyclo[1.1.1]pentyl group, a bicyclo[2.1.1]hexyl group, and a bicyclo[2.2.2]octyl group. As used herein, the term "C 3 -C 10 "Cycloalkylene" refers to a cycloalkylene having a 3 -C 10 Cycloalkyl groups are divalent groups of the same structure.

[0456] As used herein, the term "C 1 -C 10The term "heterocycloalkyl group" as used herein refers to a monovalent cyclic group atom which includes at least one heteroatom as a ring-forming atom in addition to carbon atoms and has 1 to 10 carbon atoms, and examples of the group may include a 1,2,3,4-oxatriazolidine group, a tetrahydrofuran group, and a tetrahydrothiophene group. 1 -C 10 "Heterocycloalkyl group" refers to a 1 -C 10 Heterocycloalkyl groups are divalent groups of the same structure.

[0457] As used herein, the term "C 3 -C 10 A "cycloalkenyl group" refers to a monovalent cyclic group having three to ten carbon atoms and at least one carbon-carbon double bond in the ring of the group and having no aromaticity, and examples of the group may include a cyclopentene group, a cyclohexene group, and a cycloheptene group. As used herein, the term "C 3 -C 10 The term "cycloalkenylene group" refers to a group having a 3 -C 10 A divalent group of the same structure as the cycloalkene group.

[0458] As used herein, the term "C 1 -C 10 The term "heterocyclic alkene group" refers to a monovalent cyclic group having at least one heteroatom as a ring atom in addition to carbon atoms, 1 to 10 carbon atoms, and at least one double bond (e.g., carbon-carbon double bond) in the cyclic structure of the group. 1 -C 10 Examples of heterocyclic olefin groups may include 4,5-dihydro-1,2,3,4-oxatriazole groups, 2,3-dihydrofuran groups, and 2,3-dihydrothiophene groups. 1 -C 10 "Heterocyclic alkene group" refers to a 1 -C 10 Heterocyclic alkene groups are divalent groups of the same structure.

[0459] As used herein, the term "C 6 -C 60 "Aryl group" refers to a monovalent group of a carbocyclic aromatic system having six to sixty carbon atoms, and the term "C 6 -C 60 "Arylene group" refers to a divalent group having a carbocyclic aromatic system having six to sixty carbon atoms. 6 -C 60Examples of the aryl group may include a phenyl group, a pentalene group, a naphthalene group, an azulene group, an indacene group, an acenaphthene group, a phenanthrenyl group, an anthracene group, a fluoranthene group, a benzo[9,10]phenanthrene group, a pyrene group, group, perylene group, pentaphene group, heptadiene group, tetracene group, phenanthracene group, hexacenyl group, pentacene group, rubidene group, coronene group and ovalenyl group. 6 -C 60 Aryl groups and C 6 -C 60 When the arylene groups each independently include two or more rings, these rings may be fused to each other.

[0460] As used herein, the term "C 1 -C 60 A "heteroaromatic group" refers to a monovalent group having a heterocyclic aromatic system having at least one heteroatom as a ring-forming atom and 1 to 60 carbon atoms in addition to carbon atoms. As used herein, the term "C 1 -C 60 The term "heteroarylene group" refers to a divalent group having a heterocyclic aromatic system which, in addition to one or more carbon atoms, has at least one heteroatom as a ring atom and 1 to 60 carbon atoms. 1 -C 60 Examples of heteroaryl groups may include a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, a quinoline group, a benzoquinoline group, an isoquinoline group, a benzoisoquinoline group, a quinoxaline group, a benzoquinoxaline group, a quinazoline group, a benzoquinazoline group, a cinnoline group, a phenanthroline group, a phthalazine group, and a naphthyridine group. 1 -C 60 Heteroaryl and C 1 -C 60 When the heteroarylene groups each independently include two or more rings, these rings may be fused to each other.

[0461] As used herein, the term "monovalent non-aromatic fused polycyclic group" refers to two or more rings fused to each other, with only carbon atoms (e.g., 8 to 60 carbon atoms) as ring-forming monovalent group atoms, and when considered as a whole, there is no aromaticity in the entire molecular structure. Examples of monovalent non-aromatic fused polycyclic groups can include indene groups, fluorene groups, spirobifluorene groups, benzofluorene groups, indenophenanthrene groups, and indenoanthracene groups. As used herein, the term "divalent non-aromatic fused polycyclic group" refers to a divalent group having the same structure as a monovalent non-aromatic fused polycyclic group.

[0462] The term "monovalent non-aromatic fused heteropolycyclic group" as used herein refers to a monovalent group having two or more rings fused to each other, at least one heteroatom other than a carbon atom (for example, having 1 to 60 carbon atoms) as a ring-constituting atom, and non-aromaticity in the entire molecular structure of the group when considered as a whole. Examples of the monovalent non-aromatic condensed heteropolycyclic group may include a pyrrole group, a thiophene group, a furan group, an indole group, a benzoindole group, a naphthoindole group, an isoindole group, a benzoisoindole group, a naphthoisoindole group, a benzosilyl group, a benzothiophene group, a benzofuran group, a carbazole group, a dibenzosilyl group, a dibenzothiophene group, a dibenzofuran group, an azacarbazole group, an azafluorene group, an azadibenzosilyl group, an azadibenzothiophene group, an azadibenzofuran group, a pyrazole group, an imidazole group, a triazole group, a tetrazole group, an oxazole group, an isoxazole group, a thiazole group, an isothiazole group, an oxadiazole group The term "divalent non-aromatic condensed heteropolycyclic group" as used herein refers to a divalent group having the same structure as a monovalent non-aromatic condensed heteropolycyclic group.

[0463] As used herein, the term "C 6 -C 60 The term "aryloxy group" refers to 102 (A 102 C 6 -C 60 The term "C 6 -C 60 "Arylthio group" refers to -SA 103 (A 103 It is C 6 -C 60 A monovalent group represented by an aryl group.

[0464] As used herein, the term " 10a ” means:

[0465] Deuterium (-D), -F, -Cl, -Br, -I, a hydroxyl group, a cyano group or a nitro group;

[0466] C 1 -C 60 Alkyl group, C 2 -C 60 Alkenyl group, C 2 -C 60 Alkyne group or C 1 -C 60 Alkoxy groups, each unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl groups, cyano groups, nitro groups, C 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 6 -C 60 Aryloxy group, C 6 -C 60 Arylthio group, -Si(Q 11) (Q 12 )(Q 13 ),-N(Q 11 )(Q 12 )、-B(Q 11 )(Q 12 )、-C(=O)(Q 11 )、-S(=O) 2 (Q 11 )、-P(=O)(Q 11 ))(Q 12 ) or any combination thereof,

[0467] C 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 6 -C 60 Aryloxy group or C 6 -C 60 Arylthio groups, each unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl groups, cyano groups, nitro groups, C 1 -C 60 Alkyl group, C 2 -C 60 Alkenyl group, C 2 -C 60 Alkyne group, C 1 -C 60 Alkoxy group, C 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 6 -C 60 Aryloxy group, C 6 -C 60Arylthio group, -Si(Q 21 )(Q 22 )(Q 23 )、-N(Q 21 )(Q 22 )、-B(Q 21 )(Q 22 )、-C(=O)(Q 21 )、-S(=O) 2 (Q 21 )、-P(=O)(Q 21 )(Q 22 ) or any combination thereof, or

[0468] -Si(Q 31 )(Q 32 )(Q 33 )、-N(Q 31 )(Q 32 )、-B(Q 31 )(Q 32 )、-C(=O)(Q 31 )、-S(=O) 2 (Q 31 ) or -P(=O)(Q 31 )(Q 32 ).

[0469] As used in this article, Q 1 To Q 3 , Q 11 To Q 13 , Q 21 To Q 23 and Q 31 To Q 33 can be independently: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl group; cyano group; nitro group; C 1 -C 60 Alkyl group; C 2 -C 60 Alkenyl group; C 2 -C 60 Alkyne group; C 1 -C 60 Alkoxy group; or C 3 -C 60 Carbocyclic group or C 1 -C 60 Heterocyclic groups, each unsubstituted or substituted with deuterium, -F, cyano, C 1 -C 60 Alkyl group, C 1 -C 60 The alkylene oxide is substituted with an alkoxy group, a phenyl group, a biphenyl group or any combination thereof.

[0470] As used herein, the term "heteroatom" refers to any atom other than a carbon atom. Examples of heteroatoms may include O, S, N, P, Si, B, Ge, Se, and any combination thereof.

[0471] The term "Ph" as used herein refers to a phenyl group, the term "Me" as used herein refers to a methyl group, the term "Et" as used herein refers to an ethyl group, the term "ter-Bu" or "Bu" as used herein refers to an ethyl group. t ” refers to a tert-butyl group, and the term “OMe” as used herein refers to a methoxy group.

[0472] The term "biphenyl group" as used herein may refer to a "phenyl group substituted by a phenyl group". In other words, the "biphenyl group" may be a phenyl group having C 6 -C 60 A substituted phenyl group having an aryl group as a substituent.

[0473] The term "terphenyl group" as used herein may refer to a "phenyl group substituted by a biphenyl group". For example, a "terphenyl group" may be a phenyl group substituted by a C 6 -C 60 Aryl substituted C 6 -C 60 A substituted phenyl group having an aryl group as a substituent.

[0474] As used herein, unless otherwise defined, * and *' each refer to a binding site to an adjacent atom in the corresponding formula.

[0475] Example

[0476] Synthesis Example 1: Synthesis of Ligand 1

[0477] Synthesis Schematic Figure 1

[0478]

[0479] 2.90 ml of dihydropyran (DHP), 1.20 ml of p-toluenesulfonic acid (TsOH) and 500 ml of CH 2 Cl 2 Added to 14.0 g of Intermediate 1-A to obtain 16.5 g of Intermediate 1-B.

[0480] 14.5 g of potassium thioacetate (KSAc) was added to 16.5 g of Intermediate 1-B in 500 ml of ethanol (EtOH), and refluxed to obtain 11 g of Intermediate 1-C.

[0481] 8.00 g of TsOH in 500 ml of methanol (MeOH) was added to 11.0 g of Intermediate 1-C and refluxed to obtain 12.5 g of Intermediate 1-D.

[0482] 11.0 g of dicyclohexylcarbodiimide (DCC), 2.70 g of dimethylaminopyridine (DMAP) and 10.0 ml of tetraethylene glycol dimethyl ether (TEGDME) were added to 14.0 g of intermediate 1-E, and then 500 ml of CH 2 Cl 2 , and the resulting mixture was stored at room temperature for 12 hours to obtain 17.0 g of Intermediate 1-F.

[0483] 10.0 g of DCC, 4.50 g of DMAP and 12.5 g of Intermediate 1-D were added to 17.0 g of Intermediate 1-F, and then 1000 ml of CH 2 Cl 2 , and the resulting mixture was stored at room temperature for 12 hours to obtain 14 g of Intermediate 1-G.

[0484] 250 ml of hydrazine (H 2 NNH 2 ) was added to 14 g of intermediate 1-G to obtain 12 g of ligand 1. The NMR of ligand 1 is as follows:

[0485] 1 H NMR (500 MHz, CHCl 3 ): δ4.20-4.13(m,4H), 3.63-3.40(m,15H), 2.53(d,2H), 2.35(t,4H), 2.13(m,2H), 2.0(t,4H), 1.79(s,6H), 1.60-1.29(m,6H)

[0486] 13 C NMR (125 MHz, CHCl 3 ): δ173.1, 114.5, 71.6, 70.4, 70.1, 69.3, 66.9, 65.2, 56.5, 33.9, 30.5, 28.2, 25.2, 24.6, 24.4, 23.9.

[0487] Synthesis Example 2: Synthesis of Ligand 2

[0488] Synthesis Schematic Figure 2

[0489]

[0490] 14.6 g of DCC, 6.00 ml of DMAP and 7.00 ml of glutaric acid were added to 10 g of Intermediate 2-A, and then 500 ml of CH 2 Cl 2The resulting mixture was stored at room temperature for 12 hours to obtain 10 g of ligand 2. The NMR of ligand 2 is as follows:

[0491] 1 H NMR (500MHz, DMSO): δ12.01(s,1H), 7.94(d,4H), 6.99(d,4H), 4.42-4.45(m,4H), 2.30-2.36(m,4H), 2.13(m,2H), 1.35(s,6H)

[0492] 13 C NMR (125MHz, DMSO): δ198.6, 178.4, 66.8, 129.7, 129.4, 126.7, 81.3, 66.4, 62.3, 33.3, 32.7, 27.9, 19.7.

[0493] Synthesis Example 3: Preparation of Quantum Dot-Containing Material 1

[0494] 0.31 g (0.6 mmol) of ligand 1 obtained in Synthesis Example 1 was completely dissolved in 5 mL of chloroform as a solvent, and 1.5 g of InP (1st exciton peak: 460 nm) was added thereto as quantum dots, and then, reacted at room temperature in a nitrogen atmosphere for 0.5 hours to prepare a quantum dot material 1 in which ligand 1 was bound to the surface of InP quantum dots.

[0495] Synthesis Example 4: Preparation of Quantum Dot-Containing Material 2

[0496] 0.2 g (0.6 mmol) of ligand 2 obtained in Synthesis Example 2 was dissolved in 5 mL of chloroform as a solvent, and 1.5 g of InP (1st exciton peak: 460 nm) was added thereto as quantum dots, and then, reacted at 60° C. in a nitrogen atmosphere for 0.5 hours to prepare a quantum dot material 2 in which ligand 2 was bound to the surface of InP quantum dots.

[0497] Synthesis Example 5: Preparation of Quantum Dot-Containing Material A

[0498] A quantum-dot-containing material A was prepared in the same manner as in Synthesis Example 3, except that Ligand A was used instead of Ligand 1.

[0499]

[0500] 1.2 g of the quantum dot material obtained according to Synthesis Example 3 was dispersed in the mixed solution (monomer, dispersant, and scattering agent).

[0501] Example 2 and Comparative Example 1

[0502] A quantum dot dispersed solution was prepared in the same manner as in Example 1, except that each of the quantum-dot-containing materials obtained according to Synthesis Example 4 and Synthesis Example 5 was used instead of the quantum-dot-containing material obtained in Synthesis Example 3.

[0503] Evaluation Example 1: Quantum Efficiency Evaluation

[0504] The quantum efficiency (PCE) (PCE=photoconversion efficiency) of each of the solution samples containing the corresponding quantum dot materials of Examples 1 and 2 and Comparative Example 1 was evaluated by using a QE-2100 device, and the results of the evaluation were shown in FIG. FIG. 5A to FIG. 5B and FIG. 6A to FIG. 6B Shown in.

[0505] Figure 5A and Figure 5B are graphs showing changes in PCE (%) of thin films formed using the quantum dot-containing materials according to Comparative Example 1 and Example 1 before and after baking (eg, heating), respectively, and Fig. 6A and Figure 6B : are graphs showing changes in PCE (%) of thin films formed using quantum dot-containing materials according to Comparative Examples 1 and 2 before and after exposure (eg, exposure to light), respectively.

[0506] Reference Figure 5A and Figure 5B as well as Fig. 6A and Figure 6B , it can be seen that when a thin film is formed, when ligand 1 or ligand 2 is used, the change in PCE before and after baking and before and after exposure (e.g., exposure to light) is small. Therefore, it can be seen that the ligand-containing quantum dot material according to the present disclosure is more resistant to the attack of free radicals, and therefore the stability of the quantum dot material is ideal (e.g., excellent).

[0507] According to the present disclosure, the initiator part is introduced into the ligand chemically bonded to the surface of the quantum dot, which leads to the simplification of the process, and there is no consideration (e.g., no problem) about the miscibility between the initiator and the solvent, and the ligand can be bonded to the surface of the quantum dot, thereby inducing the growth of the polymer at the surface of the quantum dot and protecting the quantum dot from the attack of free radicals, which would reduce the efficiency of the quantum dot. Therefore, the quantum yield of the formed film and composition can be increased.

[0508] The use of “may” when describing embodiments of the present disclosure means “one or more embodiments of the present disclosure”.

[0509] As used herein, the terms "substantially," "approximately," and similar terms are used as terms of approximation rather than terms of degree, and are intended to account for the inherent deviations in measured or calculated values ​​that one of ordinary skill in the art would recognize. Taking into account the measurement in question and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system), "approximately" or "approximately" as used herein are inclusive of the stated value and mean within an acceptable range of deviation of the particular value determined by one of ordinary skill in the art. For example, "approximately" can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, ±5% of the stated value.

[0510] Any numerical range listed herein is intended to include all subranges of the same numerical precision contained within the listed range. For example, the range of "1.0 to 10.0" is intended to include all subranges between (and including) the listed minimum value 1.0 and the listed maximum value 10.0, i.e., having a minimum value equal to or greater than 1.0, and a maximum value equal to or less than 10.0, such as 2.4 to 7.6. Any maximum numerical limit listed herein is intended to include all lower numerical limits contained therein, and any minimum numerical limit listed in this specification is intended to include all higher numerical limits contained therein. Therefore, the applicant reserves the right to modify this specification, including the scope of rights, to explicitly list any subranges contained within the scope explicitly listed herein.

[0511] It should be understood that the embodiments described herein should be considered as illustrative only and not for limiting purposes. The description of features or aspects within each embodiment should generally be considered as other similar features or aspects that can be used in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those of ordinary skill in the art that various suitable changes can be made in form and detail without departing from the spirit and scope defined by the following scope of rights and their equivalents.

Claims

1. A quantum dot-containing material, wherein: The quantum dot-containing material comprises: a quantum dot; and At least one ligand chemically bound to the surface of the quantum dot and represented by Formula 1: Formula 1 R a -(Z1) a1 -(L1) b1 -(Z2) a2 -P1 Formula 2-2 Among them, in formula 1 and formula 2-2, R a is the anchor group represented by -COOH, L1 is *-(CH2) n1 -*', b1 is an integer from 1 to 2, P1 is a group represented by formula 2-2, Z1 is *-(CH2) n1 -*, Z2 is n1 is an integer from 1 to 6, a1 is 0, a2 is 1, and * and *' each represent a binding site with an adjacent atom.

2. The quantum dot material according to claim 1, wherein: The ligand includes two or more ligands, and the two or more ligands are the same as or different from each other.

3. The quantum dot material according to claim 1, wherein: The ligand is chemically bound to the surface of the quantum dot via the anchoring group.

4. The quantum dot-containing material according to claim 1, wherein: The quantum dots are: semiconductor nanoparticles; particles having a core-shell structure, wherein the core-shell structure includes a core comprising a first semiconductor and a shell comprising a second semiconductor; or a perovskite compound.

5. The quantum dot-containing material according to claim 4, wherein: The semiconductor nanoparticles, the first semiconductor and the second semiconductor each independently include a Group 10 compound, a Group 11 compound, a Group 12-16 compound, a Group 13-15 compound, a Group 14-16 compound, a Group 14 compound, a Group 11-13-16 compound, a Group 11-12-13-16 compound or a combination thereof.

6. The quantum dot-containing material according to claim 4, wherein: The semiconductor nanoparticles, the first semiconductor and the second semiconductor each independently include: Au, Pd or Ag; CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgS, MgSe; CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnT e. CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnS, MgZnSe; CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe or HgZnSTe; GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb; GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InAlP, InNP, InNAs, InN Sb, InPAs, InPSb, GaAlNP; GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb or InZnP; SnS, SnSe, SnTe, PbS, PbSe, PbTe; SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe; SnPbSSe, SnPbSeTe or SnPbSTe; Si, Ge, SiC or SiGe; AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2 or AgAlO2; or Any combination of them.

7. The quantum dot-containing material according to claim 1, wherein: The average particle size D50 of the quantum dots is from 2 nm to 10 nm.

8. A composition, wherein The composition comprises: The quantum dot-containing material according to any one of claims 1 to 7; and At least one solvent.

9. The composition according to claim 8, wherein The composition also includes a monomer comprising at least one double bond.

10. The composition according to claim 8, wherein The composition does not include an initiator.

11. An electronic device, wherein: The electronic device comprises the quantum dot-containing material according to any one of claims 1 to 7.

12. The electronic device according to claim 11, wherein: The electronic device further comprises a light emitting device, comprising: The first electrode, a second electrode facing the first electrode, and an emission layer, located between the first electrode and the second electrode, Wherein, the quantum dot-containing material is included in the emission layer.

13. The electronic device according to claim 11, wherein: The electronic device also includes a light source, wherein the quantum dot-containing material is located in a path of light emitted from the light source.

14. The electronic device according to claim 13, wherein: The electronic device further comprises a color conversion layer, Wherein, the color conversion layer includes the quantum dot-containing material.

15. The electronic device according to claim 13, wherein: The light source is an organic light emitting device or a light emitting diode.

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