Ultra-high-speed multi-channel plasma sensing device

Abstract

The present invention relates to an ultra-high-speed multi-channel plasma sensing device, comprising: a first antenna module, the first antenna module is connected to a first output end, and receives a first leakage current leaked through the substrate to improve the receiving sensitivity of the leakage current, wherein the first output end contacts the substrate on a chuck of a process chamber and extends to the ground; a first current sensing module, the first current sensing module senses the first leakage current; a current measuring module, the current measuring module receives the first leakage current output from the first current sensing module, and generates first leakage current measurement information calculated according to a set period; and a control module, the control module compares the first leakage current measurement information with a reference value to generate first arc generation information.

Description

Technical Field

[0001] The invention relates to an ultra-high-speed multi-channel plasma sensing device. Background Art

[0002] In the etching process for thin film deposition and pattern formation, which is essential in the production of semiconductor devices and display panels, many technologies using plasma are applied.

[0003] For example, in the case of a deposition process, plasma is used in plasma chemical vapor deposition (PE-CVD), plasma atomic layer deposition process (PE-ALD), sputtering process, etc., and in the case of an etching process, plasma is used in inductively coupled plasma etching (Inductibely Coupled Plasma Etcher), reactive ion etching (Reactive Ion Etcher), etc.

[0004] Semiconductor components, especially memory integrated circuit manufacturing processes, are becoming increasingly sophisticated, and processes that achieve feature sizes below 3nm are being developed. As a result, the accuracy of deposition and etching processes is improving, the process time is shortening, and the on / off cycle of the plasma used is also shortening.

[0005] In particular, as the size of semiconductor elements is being ultra-miniaturized to below 10nm, the thickness of the applied thin film is also at the level of several nm. As a result, the aspect ratio of the structure to be etched tends to increase and the size of the opening tends to decrease. Therefore, the possibility of process changes due to the plasma state is increasing, and many such phenomena occur on actual mass production lines.

[0006] In a process using plasma, arcing may occur due to a high voltage difference that may be generated in a vacuum chamber, thereby causing damage to a substrate or a vacuum chamber, which may result in a significant impact on yield and productivity.

[0007] In addition, as the time for the process is shortened in order to improve productivity, the reproducibility and stability of the process are reduced based on the plasma state, and since the impact of the chamber caused by the arc phenomenon requires additional planning and determination of time for equipment maintenance, there is a problem of reduced productivity due to the reduction in equipment usage time.

[0008] Therefore, in order to improve the productivity of semiconductor processes and display panels in response to ultra-fine processes, it is necessary to determine whether an arc is generated by sensing the plasma state in real time.

[0009] In addition, when executing a process utilizing plasma technology, continuous monitoring of the plasma state is absolutely necessary to ensure the reproducibility and safety of the process. In particular, the need to clearly determine whether a micro-arc will occur in a short period of time and to predict in advance the occurrence of a hard arc based on the continuity of the micro-arc to ensure the overall process safety is increasing.

[0010] In order to solve these problems, various methods for sensing arcs that may be generated in plasma have been proposed in the prior art. Typically, after setting critical values ​​of current, voltage, and power generated by plasma, when a measured value above or below a certain level is sensed, it is determined to be an arc, and a technology is applied to cut off the power applied to generate plasma.

[0011] At this time, in order to sense the arc, a device that periodically monitors the plasma state is used. The plasma state sensing period is at the level of 1kHz to 100kHz (1ms to 1μs), which is a level that can be used before the size of semiconductor components approaches ultra-miniaturization. Although this device is suitable for sensing abnormal hard arcs (Hard Arcing) that produce relatively large voltage, current, and power values, it has the problem of being unsuitable for sensing micro arcs below a certain level.

[0012] In order to determine whether an arc has occurred, an arc is considered to have occurred only when the arc duration is longer than a certain time (100 μs in the prior art). This can prevent damage to the vacuum chamber used and the manufactured components by stopping the equipment.

[0013] In addition, in the prior art, hard arcs with relatively large changes in constant voltage, current, and power generated in the plasma are mainly sensed. However, as mentioned above, in ultra-fine processes, a device / technology is needed to sense micro-arcs (Soft Arcing) with relatively small changes in voltage, current, and power.

[0014] Therefore, in the process of manufacturing semiconductor elements below 10nm and micro LED displays and micro organic light-emitting diode display panels with a size below 10μm, a device / technology is also needed to sense the state of plasma at extremely short intervals and sense micro arcs.

[0015] In addition, in the prior art, since the method of inserting a probe capable of detecting the plasma state in the chamber is mainly used, a view port is required. However, during the course of time and process, leakage of the vacuum chamber through the view port may occur, and there is a problem that it is difficult to apply the detection device to a chamber without a view port when manufacturing equipment.

[0016] As described above, since many problems still exist in the ultrafine plasma process, a method that can more effectively solve these problems is needed. Summary of the invention

[0017] Technical issues to be solved

[0018] The object of the present invention is to provide an ultra-high-speed multi-channel plasma sensing device, which can sense and guide the micro-arcs generated in the plasma process and the prediction of the resulting hard arcs in real time.

[0019] Solutions to the problem

[0020] In order to achieve the above-mentioned purpose, an ultra-high-speed multi-channel plasma sensing device according to an embodiment of the present invention may include: a first antenna module, which is connected to a first output terminal and receives a first leakage current leaked through the substrate to improve the receiving sensitivity of the leakage current, wherein the first output terminal contacts the substrate on a chuck of a process chamber and extends to the ground; a first current sensing module, which senses the first leakage current; a current measuring module, which receives the first leakage current output from the first current sensing module and generates first leakage current measurement information calculated according to a set period; and a control module, which compares the first leakage current measurement information with a reference value to generate first arc generation information.

[0021] Wherein, the first output end can be arranged in a peripheral area of ​​the substrate.

[0022] When the control module determines that an arc has been generated based on the first arc generation information, it can determine that the state of the substrate is a warped state, and generate substrate warpage information for the warped state.

[0023] Among them, the first current sensing module may include: a 1-1th ammeter, which is arranged between the first output terminal and the first antenna module to sense the 1-1th leakage current leaked from the first output terminal; and a 1-2th ammeter, which is arranged between the first antenna module and the ground to sense the 1-2th leakage current output from the first antenna module.

[0024] The current measurement module may receive the 1-1 leakage current and the 1-2 leakage current to generate the first leakage current measurement information combining the two.

[0025] The control module may compare the first leakage current measurement information with a reference value, and generate the first arc generation information with reference to at least one of the amplitude, duration and pattern of the first leakage current.

[0026] The first arc generation information may include at least one of micro arc generation information, hard arc prediction information and hard arc generation information.

[0027] Among them, it may also include: a second antenna module, the second antenna module is connected to the second output end extending from the chuck to the ground, and after the power for heating the chuck is supplied, the second antenna module receives the second leakage current leaked from the chuck and can improve the receiving sensitivity of the leakage current; a filter module, the filter module is connected to the rear end of the second antenna module, and is used to remove the noise of the second leakage current output from the second antenna module; and a second current sensing module, the second current sensing module senses the second leakage current.

[0028] Among them, the current measurement module can receive the second leakage current output from the second current sensing module, and generate second leakage current measurement information calculated by the second leakage current according to a set period. The control module can compare the second leakage current measurement information with a reference value to generate second arc generation information.

[0029] When the control module determines that an arc has been generated based on the second arc generation information, it can be determined that an arc has been generated in the chuck, thereby generating arc generation information for the chuck.

[0030] Among them, the process chamber may also include: an observation port, which is formed in a manner that the internal space can be confirmed from the outside; the ultra-high-speed multi-channel plasma sensing device may also include: an optical sensing module, which collects plasma optical information about the state of plasma generated in the internal space through the observation port; and an optical measurement module, which receives the plasma optical information and generates optical measurement information of the plasma optical information.

[0031] The control module may compare the optical measurement information with a reference value to generate third arc generation information.

[0032] Wherein, when the control module determines that an arc has been generated based on the third arc generation information, it can determine that an arc has been generated inside the process chamber, thereby generating arc generation information for the process chamber.

[0033] The control module may compare at least two of the first arc generation information, the second arc generation information and the third arc generation information to generate fourth arc generation information for determining whether an arc is finally generated based on whether they match.

[0034] Effects of the Invention

[0035] According to the ultra-high-speed multi-channel plasma sensing device of the present invention having the above-mentioned structure, it is possible to improve the efficiency of determining whether an arc caused by plasma inside a chamber is generated.

[0036] In addition, by improving the receiving sensitivity of the antenna, it is possible to detect micro arcs generated in a short period of time.

[0037] In addition, arc sensing accuracy can be further improved by detecting arcs in multiple positions and modes.

[0038] In addition, by matching multiple arc detection results with each other to determine whether an arc is ultimately generated, the reliability of the result value can be further improved.

[0039] In addition, by predicting the occurrence of hard arcs based on the occurrence and duration of micro arcs, and guiding them, hard arcs can be prevented in advance. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figures 1 to 5 FIG. 1 is a diagram for explaining a structure of an ultra-high-speed multi-channel plasma sensing device 100 connected to a first output terminal P1 in order to sense an arc generated according to warpage of a substrate W according to an embodiment of the present invention.

[0041] Figures 6 to 9 1 is a diagram for explaining the structure of an ultra-high-speed multi-channel plasma sensing device 100 ′ connected to a second output terminal P2 according to another embodiment of the present invention.

[0042] Fig.10 1 is a diagram for explaining the structure of an ultra-high-speed multi-channel plasma sensing device 100" using an optical arc detection unit according to another embodiment.

[0043] Fig.11 It is used to illustrate the comprehensive Figures 1 to 10 The table information of whether an arc is finally generated is shown in the figure based on the detection results of the proposed ultra-high-speed multi-channel plasma sensing device 100, 100', 100".

[0044] (Explanation of Reference Numerals)

[0045] C: Process chambers 100, 100', 100": Plasma sensing device

[0046] W: substrate 110: first antenna module

[0047] H: chuck 130: first current sensing module

[0048] V: Observation port 150: Current measurement module

[0049] G: Ground 170: Control Module

[0050] P1: first output terminal 210: second antenna module

[0051] I: input terminal 230: second current sensing module

[0052] P2: Second output terminal 240: Filter module

[0053] P: Plasma 330: Optical sensing module

[0054] E: Power module 350: Optical measurement module DETAILED DESCRIPTION

[0055] Hereinafter, an ultra-high-speed multi-channel plasma sensing device according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. In this specification, even if the embodiments are different from each other, the same / similar structures are given the same / similar reference numerals, and their description is replaced by the first description.

[0056] Figures 1 to 5 FIG. 1 is a diagram for explaining a structure of an ultra-high-speed multi-channel plasma sensing device 100 connected to a first output terminal P1 in order to sense an arc generated according to warpage of a substrate W according to an embodiment of the present invention.

[0057] As shown in the figure, in this embodiment, a process chamber C is prepared as a vacuum chamber for producing a semiconductor element, a display panel, or the like.

[0058] The process chamber C has an internal space, and in a state where a substrate W such as a wafer or the like is placed on a chuck H at a lower portion to accommodate and support the substrate W as an object, a desired etching deposition process or the like can be performed by supplying gas and generating plasma P.

[0059] At this time, due to the warpage of the large-area substrate W, micro arcs and hard arcs may be generated.

[0060] For example, Figure 3As shown, when a Si substrate W longer than 300 mm is used as the substrate W, compressive stress (Compressive Stress) or tensile stress (Tensile Stress) is generated as stress (Stress) caused by heat and plasma P is applied to the thin film, thereby causing a substrate warpage phenomenon (Wafer Warpage) in which a concave shape (Concave) is formed toward the center of the substrate W or a convex shape (Convex) is formed toward the center of the substrate W.

[0061] When the plasma P process is performed in a state where the substrate warpage phenomenon exists, scratches may occur on the back surface of the substrate W, and thus arcs may be generated when the plasma P is used in a subsequent process.

[0062] In other words, when a photolithography process is performed as a process for forming a pattern on the surface of a substrate W, scratches on the back side of the substrate W induce defocusing of the light source, and as a result, defects such as wrinkling or cracking, which are damages to the surface of the substrate W, may occur.

[0063] Therefore, the plasma sensing device 100 of the present embodiment senses the leakage current of the first output terminal P1 in contact with the substrate W on the chuck H accommodated in the process chamber C, so as to be able to sense the substrate warpage phenomenon in advance, and thus determine whether an arc is generated according to the sensing result thereof. This is based on the first leakage current changing according to the state of the substrate W on the chuck H when the substrate warpage phenomenon occurs.

[0064] That is, this is because when the substrate warping phenomenon occurs, the leakage current also changes as the distance or shape between the substrate W and the first output terminal P1 changes. At this time, one end of the first output terminal P1 located in the process chamber C can be set in the surrounding area of ​​the substrate W and contact the substrate W. This is because when the substrate W is deformed (concave or convex), the shape change of the surrounding area can be most obvious and the leakage current changes greatly.

[0065] In addition, the other end of the first output terminal P1 may extend downward from one end through the chuck H and be grounded to the ground G. The plasma sensing device 100 may be disposed or connected to the first output terminal P1 to sense leakage current leaking through the first output terminal P1.

[0066] To this end, the plasma sensing device 100 may include: a first antenna module 110 , a first current sensing module 130 , a current measuring module 150 , and a control module 170 .

[0067] The first antenna module 110 is a unit for improving reception sensitivity of a first leakage current leaking from between the chuck H and the substrate W, and may be disposed at a region of the first output end P1.

[0068] like Figure 2 As shown, the first antenna module 110 may include: a cover 111, a coil 113, an input portion 115, and an output portion 117. That is, the first antenna module 110 has a structure in which the coil 113 is wound in a spiral shape in the internal space of the cover 111, one side of the first output terminal P1 is connected to the input portion 115, and the other side of the first output terminal P1 is connected to the output portion 117. Therefore, when the first leakage current is input through the input portion 115 as a circular radio wave with sharp directivity is radiated along the axial direction of the spiral, the first antenna module 110 can receive the first leakage current with higher receiving sensitivity according to the above principle.

[0069] The first current sensing module 130 is a unit for sensing the first leakage current leaking from the first output terminal P1, and can be disposed at the first output terminal P1. Such a first current sensing module 130 is composed of a 1-1st current meter 131 and a 1-2nd current meter 133 as a plurality of current meters, and can be disposed in different regions of the first output terminal P1 starting from the first antenna module 110.

[0070] That is, the 1-1st ammeter 131 may be disposed in the first output end P1 region between the chuck H and the first antenna module 110, and the 1-2nd ammeter 133 may be disposed in the first output end P1 region between the first antenna module 110 and the ground G. Thus, the first current sensing module 130 may sense the 1-1st leakage current leaked between the chuck H and the first antenna module 110 and the 1-2nd leakage current leaked between the first antenna module 110 and the ground G, respectively.

[0071] The current measurement module 150 is a unit for receiving the first leakage current from the first current sensing module 130 and generating the first leakage current measurement information in which the first leakage current is calculated periodically. Therefore, the current measurement module 150 is respectively connected to the 1-1st ammeter 131 and the 1-2nd ammeter 133 as the first current sensing module 130, and combines the 1-1st leakage current and the 1-2nd leakage current sensed in the 1-1st ammeter 131 and the 1-2nd ammeter 133 to generate the first leakage current measurement information. At this time, the combination of the 1-1st and 1-2nd leakage currents can be implemented by performing calculations such as addition (Sum), subtraction (Subtraction), and multiplication (Multiplication) on each received current value. In this embodiment, the combination of the 1-1st and 1-2nd leakage currents can be added to generate the first leakage current measurement information.

[0072] When the combination of adding the 1-1 and 1-2 leakage currents is implemented as in the present embodiment, there is an effect of amplifying the received signal, and therefore the result value thereof can be derived more efficiently.

[0073] The control module 170 may compare the first leakage current measurement information received from the current measurement module 150 with the reference value to generate the first arc generation information on whether an arc is generated. Specifically, when receiving the first leakage current measurement information, the control module 170 compares the measurement value with at least one of the amplitude, duration, pattern, etc. of the reference value and may generate the first arc generation information according to the comparison result.

[0074] At this time, the first arc generation information may include micro arc generation information about an arc with short amplitude and short duration, hard arc prediction information that can predict the generation of a hard arc, hard arc generation information about the generation of a hard arc, and normal information about a normal state, etc.

[0075] Regarding the micro arc generation information, when the received first leakage current measurement information shows a relatively small increase or decrease phenomenon compared with the reference value during the reference duration, the control module 170 may determine this state as the micro arc generation information.

[0076] As for the hard arc prediction information, when the micro arc generation information continues for the reference time for which the hard arc prediction information can be generated, it is judged that the possibility of the hard arc generation thereafter is high and the hard arc prediction information can be generated as warning information therefor. That is, in the case of the micro arc generation information, it can be a situation where the current value changes in the amplitude interval equivalent to the micro arc of only the first duration, and the hard arc prediction information can be a situation where the current value changes in the amplitude interval corresponding to the micro arc during a time period longer than the first duration.

[0077] As for the hard arc generation information, when the first leakage current measurement information deviates from a critical value higher than the critical value as the reference value of the micro arc, it can be judged as the hard arc generation information. That is, when the received first leakage current measurement information increases or decreases sharply during the set duration, it can be judged as the hard arc generation information.

[0078] In addition, when the first arc generation information includes information about arc generation, the control module 170 determines that the state of the substrate W is a warped state and can generate substrate warping information therefor. That is, since the plasma sensing device 100 of this embodiment determines whether an arc is generated based on the first leakage current generated by the state of the substrate W on the chuck H, if it is determined that an arc is generated, it can also be determined that the substrate W is in a warped state.

[0079] According to the plasma sensing device 100 having such a structure, when the first leakage current leaked through the first output terminal P1 in contact with the substrate W in the chuck H is sensed, when the first leakage current changes due to the warpage phenomenon of the substrate W, the current and future conditions of the substrate W can be judged in real time based on the sensing result. Therefore, the judgment result is transmitted to the administrator terminal or the warning sound through the communication module (not shown) or the control information that can automatically control the operation of the process chamber C is generated and transmitted, so that additional damage to the substrate W and process delay can be prevented in advance. In addition, it is configured in such a way that all information generated between these processes can be stored and transmitted to the memory module, database, external server, etc. (not shown), so that the history information according to each situation can also be generated and managed.

[0080] The plasma sensing device 100 for sensing an arc based on a warpage phenomenon of a substrate W has been described above. Figures 6 to 9 In the following, the structure of a plasma sensing device for sensing whether an arc is generated by a leakage current of a power source supplied to a chuck H will be described.

[0081] Figures 6 to 9 1 is a diagram for explaining the structure of an ultra-high-speed multi-channel plasma sensing device 100 ′ connected to a second output terminal P2 according to another embodiment of the present invention.

[0082] The plasma sensing device 100' of the present embodiment includes the plasma sensing device ( Figure 1 , Figure 100) will explain the newly added structure.

[0083] like Figure 5 As shown, in this embodiment, the process chamber C is connected to the power module E for supplying power for heating the chuck H through the input terminal I. That is, one end of the input terminal I is connected to the power module E, and the other end of the input terminal I is connected to the chuck H (heating chuck) to supply power to the chuck H. In addition, there is a second output terminal P2, and one end of the second output terminal P2 can be connected to the chuck H, and the other end can be grounded to the ground G. In this way, the power for heating the chuck H is supplied through the input terminal I, and the second leakage current leaked from the chuck H can be transmitted to the ground G through the second output terminal P2.

[0084] In such a structure, the plasma sensing device 100' can sense the second leakage current leaking to the second output terminal P2, and compare the sensing result with the reference value to determine whether an arc is generated. Figures 1 to 5 The method of sensing the leakage current to the substrate W is different from that of the present embodiment, which senses the leakage current to the chuck H.

[0085] To this end, the plasma sensing device 100 of this embodiment may further include a second antenna module 210, a filter module 240, and a second current sensing module 230. Since the current measuring module 150 and the control module 170 correspond to the structures of the above-mentioned embodiments, additional explanations will be omitted.

[0086] The second antenna module 210 may be the same as the first antenna module 110 . In order to improve the receiving sensitivity of the second leakage current leaking through the second output terminal P2 , the second antenna module 210 may be disposed at the second output terminal P2 .

[0087] The filter module 240 is a unit for removing noise of the second leakage current, and various well-known filter circuits can be applied. It can be set at the second output terminal P2, and more specifically, can be set in the second output terminal P2 area between the second antenna module 210 and the ground G.

[0088] The structure and operation of the second current sensing module 230 may be the same as the first current sensing module 130 described above, and may be arranged at the second output terminal P2 to sense the second leakage current. At this time, the second sensing module may be composed of a plurality of 2-1st ammeters 231, 2-2nd ammeters 233, and 2-3rd ammeters 235, and each ammeter may be arranged in sequence in the second output terminal P2 region between the chuck H and the second antenna module 210, between the second antenna module 210 and the filter module 240, and between the filter module 240 and the ground G.

[0089] When the second leakage current is sensed by such a structure, the current measurement module 150 can generate second leakage current measurement information by calculating the second leakage current periodically. In addition, the control module 170 receives the second leakage current measurement information and compares it with the reference value to generate second arc generation information on whether an arc is generated.

[0090] At this time, the second leakage current measurement information may be generated by a combination of the 2-1st, 2-2nd, and 2-3rd leakage currents sensed by the 2-1st, 2-2nd, and 2-3rd current meters.

[0091] The second arc generation information may be constructed in the same manner as the foregoing first arc generation information.

[0092] In addition, when the control module 170 determines that an arc has been generated based on the second arc generation information, it determines that an arc has been generated in the chuck H, thereby generating arc generation information for the chuck H.

[0093] like Figure 8 and Fig. 9As shown, the control module 170 analyzes the received second leakage current measurement information and initially senses the amplitude of the second leakage current at a period of 20μs. When the deviation is equivalent to the critical value of the micro-arc, the result can be expanded to a period of 25ns for analysis. That is, the control module 170 implements the sensing of the second leakage current at 25ns, and the normal monitoring is implemented at 20μs. There is a possibility of arc generation (when deviating from the reference value) and the corresponding area can be expanded to 25ns for analysis and judgment.

[0094] Fig. 9 (a) shows the current cycle and amplitude when no arc is generated by the second leakage current measurement information. Figure 8 (b) shows the current cycle and amplitude when a micro arc is generated. That is, when a micro arc is generated, the current value fluctuates within a certain period of time. At this time, the maximum and minimum values ​​of the fluctuation can be included in the set micro arc reference value range. In the case of a micro arc, the current value does not change much.

[0095] Fig. 9 (c) In the case of hard arc generation, it can be seen that a relatively sharp change in current value occurs compared to micro arc. Therefore, the control module 170 sets various reference values ​​corresponding to micro arc and hard arc, and can judge arc states such as micro arc generation, hard arc prediction, hard arc generation, and normal by comparing various reference values.

[0096] In the above, the plasma sensing device 100' for sensing arc generation by the second leakage current leaked from the chuck H supplied with power is described. Fig.10 In the following, a plasma sensing device for sensing arc generation through an optical unit will be described.

[0097] Fig.10 1 is a diagram for explaining the structure of an ultra-high-speed multi-channel plasma sensing device 100" using an optical arc detection unit according to another embodiment.

[0098] As shown in the figure, Fig.10 The plasma sensing device 100" has a sensing method different from that of the previous embodiment. Specifically, the plasma sensing device 100" of this embodiment is characterized in that the plasma P in the internal space of the process chamber C is optically detected to determine whether an arc is generated.

[0099] For the optical plasma sensing device 100 ″, the process chamber C may have an observation port V, which is configured in such a way that the internal space can be confirmed from the outside. Therefore, optical sensing can be performed through the observation port V.

[0100] Specifically, the plasma sensing device 100 ″ of the present embodiment may include an optical sensing module 330 and an optical measuring module 350 .

[0101] The optical sensing module 330 can collect plasma optical information about the state of the plasma P generated in the internal space of the process chamber C through the observer V. The gas dissociated by the plasma P in the internal space of the process chamber C has an inherent wavelength (color) of the gas itself emitted in the plasma P state. When an abnormal state of the plasma P occurs, the color and wavelength of the emitted light may change. Therefore, the optical sensing module 330 can collect plasma optical information about the color of the plasma P through the observer V.

[0102] The optical measurement module 350 may generate optical measurement information by dividing the plasma optical information received from the optical sensing module 330 according to each wavelength. That is, the optical measurement module 350 may divide the received plasma optical information according to each wavelength of 200 to 1100 nm including the ultraviolet-visible-infrared region to generate the optical measurement information.

[0103] When receiving the optical measurement information from the optical measurement module 350 , the control module 170 may generate the third arc generation information by comparing the optical measurement information with a reference value that is reference wavelength information in a normal state.

[0104] In addition, when the control module 170 determines that an arc has been generated based on the third arc generation information, it can determine that an arc has been generated inside the process chamber C, thereby generating arc generation information for the process chamber.

[0105] As described above, the plasma sensing device 100 ″ of the present embodiment can optically observe the plasma P generated inside the process chamber C to determine whether an arc is generated.

[0106] The optical plasma sensing device 100" has been described above. Hereinafter, a method of determining whether an arc has occurred will be described by combining the sensing results of the above-described various embodiments.

[0107] Fig.11 It is used to illustrate the comprehensive Figures 1 to 10 The table information of whether an arc is finally generated is shown in the figure based on the detection results of the proposed ultra-high-speed multi-channel plasma sensing device 100, 100', 100".

[0108] In the above embodiments, a method of sensing different objects as objects is described, such as the first leakage current sensing of the substrate W, the second leakage current sensing of the chuck H, and the sensing of the plasma P. These sensing methods can also be applied individually, but when they are configured in a multi-channel manner and configured in a complex manner, more reliable detection results can be calculated.

[0109] In other words, the control module 170 may match the first, second, and third arc generation information generated by the respective structures with each other, and generate fourth arc generation information as a final arc judgment result according to the matching result.

[0110] like Fig.11 As shown, the first, second and third arc generation information can be generated according to the respective sequence states. At this time, at least two or more arc generation information are matched with each other, and the fourth arc generation result as the final judgment result is derived according to the matching result.

[0111] exist Fig.11 Although the first, second and third arc generation information are all presented, this is for the purpose of overall explanation. In fact, the method of matching the leakage current of the substrate W and the chuck H with the optical information of the plasma P can be applied.

[0112] For example, first arc generation information on whether an arc is generated on the substrate W and third arc generation information on whether an arc is generated on the plasma P, and second arc generation information on the arc of the chuck H and third arc generation information on the arc of the plasma P may be compared with each other.

[0113] In this case, when the first arc generation information generated by the substrate W includes information about arc generation and the third arc generation information generated by the plasma P as compared therewith also includes information about arc generation, the situation is judged as an obvious arc situation and related fourth arc generation information can be generated.

[0114] On the contrary, if the first arc generation information or the second arc generation information is judged to be a normal state, but when the third arc generation information derives a sensing result such as a micro-arc, the possibility that the situation is normal or a micro-arc is relatively high, therefore, these can be combined to generate the fourth arc generation information corresponding to the reference table information.

[0115] As described above, when the arc generation information is calculated for each of the substrate W, the chuck H, and the plasma P, and the calculated results are matched to generate the final result, the reliability of the final arc generation information can be further improved. In addition, all the information generated in such a series of processes is stored and managed as history information, and the fixed process is automatically controlled based on the arc generation information, thereby improving the overall process efficiency.

[0116] The ultra-high-speed multi-channel plasma sensing device described above is not limited to the structure and operation of the above-described embodiment. The above-described embodiment can be configured in a manner of realizing various modifications by selectively combining all or part of each embodiment.

Claims

1. An ultra-high-speed multi-channel plasma sensing device, comprising: a first antenna module connected to the first output terminal and receiving a first leakage current leaking through the substrate to improve the receiving sensitivity of the leakage current, wherein the first output terminal contacts the substrate on the chuck of the process chamber and extends to the ground; a first current sensing module, wherein the first current sensing module senses the first leakage current; a current measuring module, the current measuring module receiving the first leakage current output from the first current sensing module, and generating first leakage current measurement information calculated by calculating the first leakage current according to a set period; and a control module, wherein the control module compares the first leakage current measurement information with a reference value to generate first arc generation information, The first current sensing module comprises: a 1-1st ammeter disposed between the first output terminal and the first antenna module to sense a 1-1st leakage current leaking from the first output terminal; and The 1-2nd ammeter is provided between the first antenna module and the ground to sense a 1-2nd leakage current output from the first antenna module.

2. The ultra-high-speed multi-channel plasma sensing device according to claim 1, wherein: The first output end is arranged in a peripheral area of ​​the substrate.

3. The ultra-high-speed multi-channel plasma sensing device according to claim 1, wherein: The control module determines that the state of the substrate is a warped state when it is determined based on the first arc generation information that an arc has occurred, and generates substrate warping information for the warped state.

4. The ultra-high-speed multi-channel plasma sensing device according to claim 1, wherein: The current measurement module receives the 1-1 leakage current and the 1-2 leakage current and generates the first leakage current measurement information combining the leakage current and the 1-2 leakage current.

5. The ultra-high-speed multi-channel plasma sensing device according to claim 1, wherein: The control module compares the first leakage current measurement information with a reference value, and generates the first arc generation information with reference to at least one of an amplitude, a duration, and a pattern of the first leakage current.

6. The ultra-high-speed multi-channel plasma sensing device according to claim 1, wherein: The first arc generation information includes at least one of micro arc generation information, hard arc prediction information and hard arc generation information.

7. The ultra-high-speed multi-channel plasma sensing device according to claim 1, wherein: The process chamber further comprises: an observation port formed in such a manner that the internal space can be viewed from the outside; The ultra-high-speed multi-channel plasma sensing device further comprises: an optical sensing module that collects plasma optical information about a state of plasma generated in the internal space through the observation port; and The optical measurement module receives the plasma optical information and generates optical measurement information of the plasma optical information.

8. The ultra-high-speed multi-channel plasma sensing device according to claim 7, wherein: The control module compares the optical measurement information with a reference value to generate third arc generation information.

9. The ultra-high-speed multi-channel plasma sensing device according to claim 8, wherein: The control module determines that an arc has been generated inside the process chamber when it is determined based on the third arc generation information that an arc has been generated, thereby generating arc generation information for the process chamber.

10. An ultra-high-speed multi-channel plasma sensing device, comprising: a first antenna module connected to the first output terminal and receiving a first leakage current leaking through the substrate to improve the receiving sensitivity of the leakage current, wherein the first output terminal contacts the substrate on the chuck of the process chamber and extends to the ground; a first current sensing module, wherein the first current sensing module senses the first leakage current; a current measuring module, the current measuring module receiving the first leakage current outputted from the first current sensing module, and generating first leakage current measurement information obtained by calculating the first leakage current according to a set period; a control module, wherein the control module compares the first leakage current measurement information with a reference value to generate first arc generation information; a second antenna module, the second antenna module being connected to a second output terminal extending from the chuck toward the ground and receiving a second leakage current leaking from the chuck after supplying power to heat the chuck, thereby being able to improve receiving sensitivity of the leakage current; a filter module, the filter module being connected to a rear end of the second antenna module and being configured to remove noise of the second leakage current output from the second antenna module; and A second current sensing module is provided, wherein the second current sensing module senses the second leakage current.

11. The ultra-high-speed multi-channel plasma sensing device according to claim 10, wherein: The current measuring module receives the second leakage current output from the second current sensing module, and generates second leakage current measurement information calculated by the second leakage current according to a set period, The control module compares the second leakage current measurement information with a reference value to generate second arc generation information.

12. The ultra-high-speed multi-channel plasma sensing device according to claim 11, wherein: The control module determines that an arc has occurred in the chuck when it is determined based on the second arc generation information that an arc has occurred, thereby generating arc generation information for the chuck.

13. An ultra-high-speed multi-channel plasma sensing device, wherein: include: a first antenna module connected to the first output terminal and receiving a first leakage current leaking through the substrate to improve the receiving sensitivity of the leakage current, wherein the first output terminal contacts the substrate on the chuck of the process chamber and extends to the ground; a first current sensing module, wherein the first current sensing module senses the first leakage current; a current measuring module, the current measuring module receiving the first leakage current output from the first current sensing module, and generating first leakage current measurement information calculated by calculating the first leakage current according to a set period; and a control module, wherein the control module compares the first leakage current measurement information with a reference value to generate first arc generation information; a second antenna module, the second antenna module being connected to a second output terminal extending from the chuck toward the ground and receiving a second leakage current leaking from the chuck after supplying power to heat the chuck, thereby being able to improve receiving sensitivity of the leakage current; a filter module, the filter module being connected to a rear end of the second antenna module and configured to remove noise of the second leakage current output from the second antenna module; and a second current sensing module, wherein the second current sensing module senses the second leakage current; The process chamber further comprises: an observation port formed in such a manner that the internal space can be viewed from the outside; The ultra-high-speed multi-channel plasma sensing device further comprises: an optical sensing module that collects plasma optical information about a state of plasma generated in the internal space through the observation port; and an optical measurement module, the optical measurement module receiving the plasma optical information and generating optical measurement information of the plasma optical information, The current measuring module receives the second leakage current output from the second current sensing module, and generates second leakage current measurement information calculated by the second leakage current according to a set period, The control module compares the optical measurement information with a reference value to generate third arc generation information. The control module compares the second leakage current measurement information with a reference value to generate second arc generation information, The control module compares at least two of the first arc generation information, the second arc generation information, and the third arc generation information to generate fourth arc generation information for determining whether an arc is finally generated based on whether they match.

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