A Micro LED chip array integration structure

Abstract

The present invention provides a Micro LED chip array integrated structure, which includes: a Micro LED chip array composed of an array of X rows and Y columns of Micro LED chips; Y columns of first-polarity driving lines connected to the first electrodes of X Micro LED chips in each column; X rows of second-polarity driving lines connected to the second electrodes of Y Micro LED chips in each row; Y first-polarity electrodes connected to the first-polarity driving lines of each column; X second-polarity electrodes connected to the second-polarity driving lines of each row; and an insulating layer located between the first-polarity driving lines and the second-polarity driving lines. The present invention solves the problems of difficult control of transfer cutting accuracy, slow transfer speed, and low transfer yield caused by the too small size of existing Micro LED chips.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and particularly to a Micro LED chip array integration structure. Background Art

[0002] Micro LED chips are a major focus in current display light sources. Among them, due to the fact that the size of Micro LED chips is much smaller than that of current LED chips, it is possible to use a single LED chip as the smallest pixel unit, thereby significantly improving the resolution of existing display screens. It has advantages such as low power consumption, high contrast, and high brightness.

[0003] However, Micro LED chips face many problems in actual production applications. Firstly, when the LED chips reach the Micro level, the cutting difficulty of the LED die increases significantly, the cutting accuracy requirement is higher, and the cutting time is longer. In addition, there is also a problem of massive transfer in the actual production of Micro LED chips. When a single Micro LED chip is transferred to a substrate, due to the small overall die size of the Micro LED chip, its interconnection pads are much smaller than those of conventional LED chips. As a result, during the transfer process, on the one hand, it is difficult to grasp the Micro LED chip, and on the other hand, the alignment difficulty of the electrodes after grasping the Micro LED chip also increases significantly.

[0004] Regarding the current massive transfer problem, there are already many technical solutions, such as roll-to-roll transfer, laser transfer, etc. Although the above transfer technologies have been proposed, these technologies still have problems such as difficult control of transfer accuracy, slow transfer speed, and low transfer yield. At the same time, they also require significant replacement, addition, or modification of existing equipment, resulting in expensive transfer equipment and a significant increase in manufacturing costs. This poses a great challenge to production and manufacturing. Summary of the Invention

[0005] Based on this, the purpose of the present invention is to provide a Micro LED chip array integration structure to fundamentally solve the problems of difficult control of transfer and cutting accuracy, slow transfer speed, and low transfer yield caused by the too small size of existing Micro LED chips.

[0006] A Micro LED chip array integration structure according to an embodiment of the present invention includes:

[0007] A Micro LED chip array composed of an array of Micro LED chips in X rows and Y columns;

[0008] Y columns of first-polarity driving lines connected to the first electrodes of X Micro LED chips in each column;

[0009] X rows of second-polarity driving lines connected to the second electrodes of Y of the Micro LED chips in each row;

[0010] Y first-polarity electrodes connected to the first-polarity driving lines in each column;

[0011] X second-polarity electrodes connected to the second-polarity driving lines in each row; and

[0012] An insulating layer located between the first-polarity driving lines and the second-polarity driving lines.

[0013] In addition, a Micro LED chip array integration structure according to the above embodiments of the present invention may further have the following additional technical features:

[0014] Further, the Micro LED chip includes:

[0015] A substrate, an epitaxial layer located on the substrate, and a conductive electrode located on the epitaxial layer;

[0016] The epitaxial layer includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer sequentially provided on the substrate, and the polarity of the first semiconductor layer is opposite to that of the second semiconductor layer;

[0017] The conductive electrode includes a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer.

[0018] Further, X≥1, Y≥1, and X and Y are not both 1 at the same time.

[0019] Further, isolation trenches for isolating adjacent Micro LED chips are provided at the boundaries of each Micro LED chip.

[0020] Further, the insulating layer includes a first insulating layer and a second insulating layer;

[0021] The first insulating layer covers the Micro LED chip array, and the first-polarity driving line passes through the first insulating layer and is connected to the first electrode;

[0022] The second insulating layer covers the first insulating layer and the first-polarity driving line, and the second-polarity driving line passes through the second insulating layer and the first insulating layer and is connected to the second electrode.

[0023] Further, the Micro LED chip array integration structure further includes a protective layer covering the Micro LED chip array, the first-polarity driving lines, and the second-polarity driving lines;

[0024] The first-polarity electrode passes through the protective layer and is connected to the corresponding first-polarity driving line, and the second-polarity electrode passes through the protective layer and is connected to the corresponding second-polarity driving line.

[0025] Further, the first-polarity electrode and the second-polarity electrode are located on the non-light-emitting surface of the Micro LED chip array.

[0026] Further, each of the first-polarity electrodes and each of the second-polarity electrodes are arranged in a staggered manner along two diagonals of the MicroLED chip array.

[0027] Further, the side length of the light-emitting layer in the Micro LED chip is less than 100 um.

[0028] Further, the isolation trenches are provided between adjacent Micro LED chips in each column.

[0029] Compared with the prior art: By providing a Micro LED chip array composed of an array of X rows and Y columns of Micro LED chips, and a first-polarity driving line connected to the first electrode is provided on each column, and a second-polarity driving line connected to the second electrode is provided on each row, and the first-polarity driving line is connected to the first-polarity electrode, and the second-polarity driving line is connected to the second-polarity electrode, an integration structure of a Micro LED chip array is formed by integrating a plurality of existing Micro LED chips and the driving lines that originally needed to be realized at the die bonding end at the die end. And by integrating the first-polarity driving line and the second-polarity driving line at the die end, it is realized that all X×Y Micro LED chips of the Micro LED chip array can be respectively lit by X first-polarity electrodes and Y second-polarity electrodes. Thus, the Micro LED chip array can be used as the smallest cutting, transfer, and interconnection unit, so that the size of the smallest cutting, transfer, and interconnection unit can reach the magnitude achievable by the existing process level, thereby solving the problems of difficult control of transfer cutting accuracy, slow transfer speed, and low transfer yield caused by the too small size of the existing Micro LED chips; at the same time, it also avoids the problems of difficult pick-up of Micro LED chips and massive transfer, enabling both the die end and the die bonding end to greatly reduce production costs; at the same time, it also greatly reduces the transfer frequency of the Micro LED chip array, thus reducing production costs. Description of the Drawings

[0030] Figure 1 is a schematic cross-sectional structure diagram of an integrated structure of a Micro LED chip array according to an embodiment of the present invention;

[0031] Figure 2 Top view of each Micro LED chip separated by the MESA mesa region and isolation trenches in the Micro LED chip array integration structure according to an embodiment of the present invention;

[0032] Figure 3 Top view of the positions of the first electrode and the second electrode in the Micro LED chip array integration structure according to an embodiment of the present invention;

[0033] Figure 4 Top view of the position and the opening position of the first insulating layer in the Micro LED chip array integration structure according to an embodiment of the present invention;

[0034] Figure 5 Top view of the positions of the four first-polarity driving lines in the Micro LED chip array integration structure according to an embodiment of the present invention;

[0035] Figure 6 Cross-sectional view of the Micro LED chip array integration structure according to an embodiment of the present invention when four first-polarity driving lines are provided;

[0036] Figure 7 Top view of the position and the opening position of the second insulating layer in the Micro LED chip array integration structure according to an embodiment of the present invention;

[0037] Figure 8 Top view of the positions of the four second-polarity driving lines in the Micro LED chip array integration structure according to an embodiment of the present invention;

[0038] Figure 9 Cross-sectional view of the Micro LED chip array integration structure according to an embodiment of the present invention when four second-polarity driving lines are provided;

[0039] Figure 10 Top view of the position and the opening position of the protective layer in the Micro LED chip array integration structure according to an embodiment of the present invention;

[0040] Figure 11 Top view of the positions of the first-polarity electrode and the second-polarity electrode in the Micro LED chip array integration structure according to an embodiment of the present invention;

[0041] Figure 12 Schematic cross-sectional structure diagram of the Micro LED chip array integration structure according to another embodiment of the present invention;

[0042] Figure 13Top view of the MESA mesa region and each Micro LED chip separated by isolation trenches in the Micro LED chip array integration structure according to another embodiment of the present invention;

[0043] Figure 14 Top view of the positions of the first electrode and the second electrode in the Micro LED chip array integration structure according to another embodiment of the present invention;

[0044] The following specific embodiments will further illustrate the present invention in conjunction with the above drawings. Specific Embodiments

[0045] To facilitate the understanding of the present invention, the present invention will be described more comprehensively with reference to the relevant drawings. Several embodiments of the present invention are shown in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the disclosure of the present invention more thorough and comprehensive.

[0046] It should be noted that when an element is referred to as being "fixed to" another element, it can be directly on the other element or there can also be an intermediate element. When an element is considered to be "connected" to another element, it can be directly connected to the other element or there may be an intermediate element at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only.

[0047] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field to which the present invention belongs. The terms used in the description of the present invention herein are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0048] Embodiment 1

[0049] Please refer to Figures 1-14 , which shows the Micro LED chip array integration structure in the first embodiment of the present invention. For the convenience of description, only the parts related to the embodiments of the present invention are shown. The Micro LED chip array integration structure provided by the embodiments of the present invention includes:

[0050] A Micro LED chip array composed of an array of X rows and Y columns of Micro LED chips;

[0051] Y columns of first-polarity driving lines 33 connected to the first electrodes 20 of X Micro LED chips in each column;

[0052] X rows of second-polarity driving lines 35 connected to the second electrodes 21 of Y Micro LED chips in each row;

[0053] Y first-polarity electrodes 43 connected to the first-polarity driving lines 33 in each column;

[0054] X second-polarity electrodes 44 connected to the second-polarity driving lines 35 in each row; and

[0055] An insulating layer located between the first-polarity driving line 33 and the second-polarity driving line 35.

[0056] Among them, in the embodiments of the present invention, the Micro LED chip array is composed of an X-row and Y-column Micro LED chip array, where X≥1, Y≥1, and X and Y are not both 1 at the same time. Preferably, the values of X and Y are the same. Specifically, in an example of the present invention, referring to Figures 2-5 As shown, X = 4 and Y = 4, that is, the Micro LED chip array is a 4×4 array unit. It can be understood that in other embodiments of the present invention, the values of X and Y can also be other values, which are set according to actual usage needs and are not specifically limited here.

[0057] Furthermore, in the embodiments of the present invention, the Micro LED chip includes: a substrate 11, an epitaxial layer located on the substrate 11, and a conductive electrode located on the epitaxial layer; the epitaxial layer includes a first semiconductor layer 12, a light-emitting layer 13, and a second semiconductor layer 14 sequentially arranged on the substrate 11, and the polarity of the first semiconductor layer 12 is opposite to that of the second semiconductor layer 14; the conductive electrode includes a first electrode 20 electrically connected to the first semiconductor layer 12 and a second electrode 21 electrically connected to the second semiconductor layer 14.

[0058] Among them, the substrate 11 is a substrate for epitaxial layer growth and has the functions of support and stability. The substrate 11 can be an insulating substrate or a conductive substrate, and the materials of the substrate 11 include, but are not limited to, sapphire, aluminum nitride, gallium nitride, silicon, and silicon carbide. Among them, the substrate 11 can be a planar substrate 11 or a patterned substrate 11.

[0059] Further, an epitaxial layer is formed on the substrate 11. The epitaxial layer can be grown on the substrate 11 by a metal organic chemical vapor deposition (MOCVD) device, or an epitaxial layer can be bonded to the substrate 11 by a transparent bonding layer bonding method. As an example of the present invention, the epitaxial layer includes a first semiconductor layer 12, a light-emitting layer 13, and a second semiconductor layer 14 sequentially provided on the substrate 11, wherein the polarity of the first semiconductor layer 12 is opposite to that of the second semiconductor layer 14. In this specific embodiment, the first semiconductor layer 12 is an N-type semiconductor layer, such as N-type gallium nitride (GaN); correspondingly, the second semiconductor layer 14 is a P-type semiconductor layer, such as P-type gallium nitride. It should be noted that the N-type semiconductor layer is a semiconductor layer formed by silicon doping or carbon doping, and the P-type semiconductor layer is a semiconductor layer formed by magnesium doping or zinc doping. At this time, correspondingly, the first electrode 20 is an N electrode, and the second electrode 21 is a P electrode; the first polarity driving circuit 33 is a negative driving circuit, and the second polarity driving circuit 35 is a positive driving circuit; the first polarity electrode 43 is a negative electrode, and the second polarity electrode 44 is a positive electrode. It can be understood that in other embodiments of the present invention, the first semiconductor layer 12 can also be a P-type semiconductor layer, and the second semiconductor layer 14 can also be an N-type semiconductor layer, which is set according to actual use needs and is not specifically limited herein. At this time, correspondingly, the first electrode 20, the second electrode 21, the first polarity driving circuit 33, the second polarity driving circuit 35, the first polarity electrode 43, and the second polarity electrode 44 are set accordingly according to the specific settings of the first semiconductor layer 12 and the second semiconductor layer 14, which will not be elaborated herein.

[0060] Furthermore, the light-emitting layer 13 includes a quantum well layer and a quantum barrier layer that are alternately grown in sequence periodically. Among them, the quantum well layer and the quantum barrier layer are alternately grown in sequence periodically, so that at least one composite well can be formed in the light-emitting layer 13, and the composite well can improve the light-emitting efficiency of the light-emitting diode chip. The light-emitting layer 13 can be composed of gallium nitride-based materials, gallium arsenide-based materials, etc., and the elemental composition ratio of the semiconductor can be adjusted to emit the desired wavelength, such as providing ultraviolet, blue, red, infrared and other light radiations. Further, in an embodiment of the present invention, the side length of the light-emitting layer 13 in the Micro LED chip is less than 100 um.

[0061] Furthermore, after the above epitaxial layer is fabricated, the second semiconductor layer 14 and the light-emitting layer 13 in one side of the epitaxial layer are etched by an etching process until the first semiconductor layer 12 is exposed, so that a MESA mesa 15 is formed by etching, as shown in Figure 2As shown, a first semiconductor layer 12, a light-emitting layer 13, and a second semiconductor layer 14 are sequentially arranged at the position of the MESA mesa 15, and only the first semiconductor layer 12 is arranged at the position adjacent to the MESA mesa 15. Correspondingly, the first electrode 20 is located on the exposed first semiconductor layer 12 and is electrically connected to the first semiconductor layer 12, the second electrode 21 is located on the MESA mesa 15 and is electrically connected to the second semiconductor layer 14, and the reference is Figure 3 as shown.

[0062] Furthermore, in a preferred embodiment of the present invention, each Micro LED chip uses the same substrate 11, that is, each of the above-mentioned epitaxial layers and conductive electrodes is formed on a whole substrate 11 to form each Micro LED chip. At this time, in order to achieve isolation between each Micro LED chip, an isolation trench 16 for isolating adjacent Micro LED chips is provided at the boundary of each Micro LED chip. At this time, the isolation trench 16 isolates each Micro LED chip in the Micro LED chip array. It should be noted that the isolation trench 16 is provided on the substrate 11, that is, the isolation trench 16 provided on the substrate 11 isolates the first semiconductor layer 12 and the first electrode 20 from the adjacent second semiconductor layer 14 and the second electrode 21. Specifically, the reference is Figure 2 as shown, which is a top view of the MESA mesa 15 region in the Micro LED chip array and each Micro LED chip separated by the isolation trench 16. It should be noted that, as Figure 2 shown, each Micro LED chip is represented by a square. However, it should be noted that the square boundary does not represent the actual distinguishable edge of the Micro LED chip. The Micro LED chip can actually be of other shapes and sizes, which are set according to actual usage needs and are not specifically limited here.

[0063] Further, in an embodiment of the present invention, the first electrodes 20 of X Micro LED chips in each column are electrically connected to the first-polarity driving line 33, so that the first electrodes 20 of the X Micro LED chips in each column are connected to a common first pole through one first-polarity driving line 33. The second electrodes 21 of Y Micro LED chips in each row are connected to the second-polarity driving line 35, so that the second electrodes 21 of the Y Micro LED chips in each row are connected to a common second pole through one second-polarity driving line 35. Specifically, in this embodiment, the N electrodes of 4 Micro LED chips in each column are connected to the negative-polarity driving line to form a common negative pole, and the P electrodes of 4 Micro LED chips in each row are connected to the positive-polarity driving line to form a common positive pole. Specifically, since the first electrode 20 is connected to the first semiconductor layer 12 and the second electrode 21 is connected to the second semiconductor layer 14 as described above, the height of the first electrode 20 is lower than that of the second electrode 21. Therefore, the first electrodes 20 of the Micro LED chips in each column are adjacent to each other without occlusion and are on the same height plane, while there are second electrodes 21 with a higher height between the first electrodes 20 of the Micro LED chips in each row. At this time, by setting the first electrodes 20 of the Micro LED chips in each column to be connected to the first-polarity driving line 33, each first-polarity driving line 33 can be directly laid flat on the first electrodes 20 of the Micro LED chips with the same height in each column.

[0064] Among them, in a preferred embodiment of the present invention, the isolation trenches 16 are provided between adjacent Micro LED chips in each column. At this time, the isolation trenches 16 no longer separate each Micro LED chip, but separate the Micro LED chips in each column, so that the first-polarity driving line 33 does not need to pass through the isolation trenches 16, avoiding reliability problems caused by cracks or uneven thickness at the slopes of the isolation trenches 16. Refer to Figure 13 as shown.

[0065] Among them, in a preferred embodiment of the present invention, the first-polarity driving line 33 can also be directly provided on the exposed first semiconductor layer 12 and electrically connected to the first semiconductor layer 12, so that the step of first preparing the first electrodes 20 in each MicroLED chip and then connecting them to a common first pole through the first-polarity driving line 33 is omitted. At this time, the first-polarity driving line 33 replaces the function of the first electrodes 20 of each Micro LED chip, making the overall structure simpler. Specifically, refer to Figure 12 and Figure 14 as shown.

[0066] Furthermore, the insulating layer is located between the first-polarity driving line 33 and the second-polarity driving line 35. Specifically, in an embodiment of the present invention, the insulating layer includes a first insulating layer 32 and a second insulating layer 34. The first insulating layer 32 covers the Micro LED chip array, and the first-polarity driving line 33 passes through the first insulating layer 32 to connect with the first electrode 20; the second insulating layer 34 covers the first insulating layer 32 and the first-polarity driving line 33, and the second-polarity driving line 35 passes through the second insulating layer 34 and the first insulating layer 32 to connect with the second electrode 21. At this time, the first insulating layer 32 is used to isolate the first electrode 20 from the second electrode 21, and the second insulating layer 34 is used to isolate the first-polarity driving line 33 from the second-polarity driving line 35. Refer to Figure 1 As shown, it is a top view of the position of the insulating layer and the position of the opening. Further, in a preferred embodiment of the present invention, the insulating layer may also have only one layer. At this time, the insulating layer is the second insulating layer 34 described above. That is to say, the insulating layer covers the Micro LED chip array and the first-polarity driving line 33, and the second-polarity driving line 35 passes through the insulating layer to connect with the second electrode 21.

[0067] Furthermore, in an embodiment of the present invention, the first-polarity electrodes 43 and the second-polarity electrodes 44 are located on the non-light-emitting surface of the Micro LED chip array. Specifically, each of the first-polarity electrodes 43 and each of the second-polarity electrodes 44 are disposed on the above-mentioned structure, and the first-polarity electrode 43 is connected to the first-polarity driving line 33, and the second-polarity electrode 44 is connected to the second-polarity driving line 35. Further, one first-polarity electrode 43 is provided on each column of the first-polarity driving lines, one second-polarity electrode 44 is provided on each row of the second-polarity driving lines, and the first-polarity electrodes 43 and the second-polarity electrodes 44 do not simultaneously lie on the same Micro LED chip. The first-polarity electrodes 43 and the second-polarity electrodes 44 can be arranged in various interleaved manners, and their positions are flexibly arranged according to actual usage needs. In a preferred embodiment of the present invention, the first-polarity electrodes 43 and the second-polarity electrodes 44 are respectively arranged in an interleaved manner along two diagonals of the Micro LED chip array. At this time, refer to Figure 11 As shown, that is, at this time, by connecting one of the first-polarity electrode 43 and the second-polarity electrode 44 to a constant current and constant voltage source respectively, the Micro LED chips corresponding to the column where the first-polarity electrode 43 is located and the row where the second-polarity electrode 44 is located can be lit. So that the X×Y Micro LED chips in the Micro LED chip array can be individually lit and interconnected with the substrate through X first-polarity electrodes 43 and Y second-polarity electrodes 44.

[0068] Further, in an embodiment of the present invention, the Micro LED chip array integrated structure further includes a protective layer 40 covering the Micro LED chip array, the first-polarity driving line 33, and the second-polarity driving line 35; and the first-polarity electrode 43 passes through the protective layer 40 and is connected to the corresponding first-polarity driving line 33, and the second-polarity electrode 44 passes through the protective layer 40 and is connected to the corresponding second-polarity driving line 35. For details, refer to Figure 1 as shown. The protective layer 40 is used to protect the Micro LED chip array to prevent the intrusion of moisture and dirt in the air.

[0069] Specifically, when preparing the Micro LED chip array integrated structure, taking the above 4×4 Micro LED chip array as an example:

[0070] First, on a whole substrate 11, each epitaxial layer is grown and fabricated through a metal organic chemical vapor deposition (MOCVD) device, that is, a first semiconductor layer 12 (N-type semiconductor), a light-emitting layer 13, and a second semiconductor layer 14 (P-type semiconductor) are sequentially grown on the substrate 11, and a MESA mesa 15 is formed by etching to expose a part of the first semiconductor layer 12, and isolation trenches 16 are etched on the substrate 11, so that the isolation trenches 16 isolate each Micro LED chip in the Micro LED chip array (4×4 Micro LED chips). For details, refer to Figure 2 as shown. Further, in a preferred embodiment of the present invention, refer to Figure 13 as shown. The isolation trenches 16 are provided between adjacent Micro LED chips in each column. At this time, the isolation trenches 16 no longer separate each Micro LED chip, but separate the Micro LED chips in each column, so that the subsequently fabricated first-polarity driving line 33 does not need to pass through the isolation trenches 16, avoiding reliability problems caused by cracks or uneven thickness at the slopes of the isolation trenches 16 of the first-polarity driving line 33.

[0071] Further, a first electrode 20 (N electrode) electrically connected to the first semiconductor layer 12 is provided at the position where the first semiconductor layer 12 is exposed, and a second electrode 21 (P electrode) electrically connected to the second semiconductor layer 14 is provided at the position of the MESA mesa 15, so as to fabricate and form a 4×4 Micro LED chip array. For details, refer to Figure 3 as shown. Among them, in a preferred embodiment of the present invention, the first electrode 20 may not be provided.

[0072] Further, a first insulating layer 32 is provided on the Micro LED chip array. At this time, the first insulating layer 32 entirely covers the Micro LED chip array, and at the same time, openings are formed on the first insulating layer 32. Specifically, 16 first electrode openings 30 (N-pole openings) and 16 second electrode openings 31 (P-pole openings) are formed. Among them, the 16 first electrode openings 30 are arranged at the corresponding positions of the first electrodes 20 of each Micro LED chip, and the 16 second electrode openings 31 are arranged at the corresponding positions of the second electrodes 21 of each Micro LED chip, so that partial first electrodes 20 and second electrodes 21 of each Micro LED chip can be exposed. Specifically, refer to Figure 4 as shown.

[0073] Further, first-polarity driving lines 33 (negative-polarity driving lines) are arranged at the positions corresponding to the first electrodes 20 of each column of Micro LED chips on the first insulating layer 32, that is, 4 columns of first-polarity driving lines 33 are arranged. At this time, the first electrodes 20 of 4 Micro LEDs in each column are electrically connected to a first electrode 20 driving line through 4 first electrode openings 30, that is, the above-mentioned first-polarity driving lines 33 pass through the first insulating layer 32 and are connected to the first electrodes 20, so as to form a total of 4 common first poles (common negative poles). Specifically, refer to Figure 5 and Figure 6 as shown. Among them, in a preferred embodiment of the present invention, when the first electrodes 20 are not provided, the first electrode 20 driving lines can also be directly connected to the first semiconductor layer 12, so that the step of first preparing the first electrodes 20 of each Micro LED chip and then connecting them to a common first pole through the first-polarity driving lines 33 is omitted. At this time, the first-polarity driving lines 33 replace the functions of the first electrodes 20 of each Micro LED chip, making the overall structure simpler. Refer to Figure 12 as shown.

[0074] Further, a second insulating layer 34 is provided on the above-mentioned structure. At this time, the second insulating layer 34 entirely covers the first insulating layer 32 and the first-polarity driving lines 33, and at the same time, openings are formed on the second insulating layer 34. Specifically, 16 second electrode openings 31 and 4 first-polarity electrode openings 41 (negative-pole openings) are formed. Among them, the 16 second electrode openings 31 are arranged at the corresponding positions of the second electrodes 21 of each Micro LED chip, so that partial second electrodes 21 of each Micro LED chip can be exposed. The 4 first-polarity electrode openings 41 are located on 4 first-polarity driving lines 33, so that partial areas of each first-polarity driving line 33 are exposed. Specifically, the 4 first-polarity electrode openings 41 in the present invention are sequentially arranged at the diagonal positions of the MicroLED chip array. Specifically, refer toFigure 7 as shown

[0075] Furthermore, at positions corresponding to the second electrodes 21 of each Micro LED chip in each row on the second insulating layer 34, second-polarity driving lines 35 (positive-polarity driving lines) are provided. That is, 4 rows of second-polarity driving lines 35 are provided. At this time, the second electrodes 21 of the 4 Micro LEDs in each row are electrically connected to one second-electrode driving line through 4 second-electrode openings 31. That is, the above-mentioned second-polarity driving lines 35 pass through the first insulating layer 32 and the second insulating layer 34 to be connected to the second electrodes 21, thereby forming a total of 4 common second poles (common positive poles). For details, refer to Figure 8 and Figure 9 as shown

[0076] Furthermore, in a preferred embodiment of the present invention, the above-mentioned second insulating layer 34 may be directly provided on the Micro LED chip array without providing the above-mentioned first insulating layer 32. That is, the second insulating layer 34 covers the Micro LED chip array and the first-polarity driving lines 33, and the second-polarity driving lines 35 pass through the second insulating layer 34 to be connected to the second electrodes 21, so that the second insulating layer 34 can achieve electrical isolation between the first-polarity driving lines 33 and the second-polarity driving lines 35. For details, refer to Figure 12 as shown

[0077] Furthermore, a protective layer 40 is provided on the above-mentioned structure. At this time, the protective layer 40 entirely covers the second insulating layer 34 and the second-polarity driving lines 35. At the same time, openings are formed in the protective layer 40. Specifically, 4 first-polarity electrode openings 41 and 4 second-polarity electrode openings 42 (positive-polarity openings) are formed. Among them, the 4 first-polarity electrode openings 41 correspond to the above-mentioned first-polarity electrode openings 41, and the 4 second-polarity electrode openings 42 are located on the 4 second-polarity driving lines 35, exposing partial areas of each second-polarity driving line 35. Specifically, the 4 second-polarity electrode openings 42 in the present invention are sequentially arranged at the diagonal positions of the Micro LED chip array and are staggered with the above-mentioned 4 first-polarity electrode openings 41. For details, refer to Figure 10 as shown

[0078] Further, a first-polarity electrode 43 (negative electrode) is provided at a position on the protective layer 40 corresponding to the first-polarity electrode opening 41, so that the four first-polarity electrodes 43 are electrically connected to the four first-electrode 20 driving lines through the four first-polarity electrode openings 41, that is, the first-polarity electrode 43 passes through the protective layer 40 and is connected to the corresponding first-polarity driving line 33. Correspondingly, a second-polarity electrode 44 (positive electrode) is provided at a position on the protective layer 40 corresponding to the second-polarity electrode opening 42, so that the four second-polarity electrodes 44 are electrically connected to the four second-electrode 21 driving lines through the four second-polarity electrode openings 42, that is, the second-polarity electrode 44 passes through the protective layer 40 and is connected to the corresponding second-polarity driving line 35. For details, refer to Figure 11 as shown. At this time, the protective layer 40 is used to protect the Micro LED chip array to prevent the intrusion of moisture and dirt in the air.

[0079] Correspondingly, at this time, by integrating the first-polarity driving line 33 and the second-polarity driving line 35 at the die end, it is realized that all 16 Micro LED chips of the Micro LED chip array can be separately lit by the four first-polarity electrodes 43 and the four second-polarity electrodes 44. Specifically, by connecting a constant current and voltage stabilizer to one of the first-polarity electrodes 43 and the second-polarity electrode 44 respectively, the Micro LED chip corresponding to the column where the first-polarity electrode 43 is located and the row where the second-polarity electrode 44 is located can be lit. At this time, the sum of the 16 Micro LED chips can be used as the smallest cutting, transfer, and interconnection unit. The cutting, transfer, and interconnection unit is at least 16 times the size of a single Micro LED chip, solving the problems of difficult control of transfer and cutting accuracy and large difficulty in die picking due to the too small size of the Micro LED chip, and at the same time greatly reducing the transfer frequency and production cost.

[0080] In summary, for the Micro LED chip array integration structure in the above embodiments of the present invention, by providing a Micro LED chip array composed of an array of X rows and Y columns of Micro LED chips, with a first-polarity driving line connected to the first electrode provided on each column, and a second-polarity driving line connected to the second electrode provided on each row, and the first-polarity driving line is connected to the first-polarity electrode, and the second-polarity driving line is connected to the second-polarity electrode, it enables the integration of multiple existing MicroLED chips and the driving lines that originally needed to be implemented at the die bonding end at the die level to form a Micro LED chip array integration structure. And by integrating the first-polarity driving line and the second-polarity driving line at the die level, it is achieved that all X×Y MicroLED chips of the Micro LED chip array can be separately lit by X first-polarity electrodes and Y second-polarity electrodes. Thus, the Micro LED chip array can be used as the smallest dicing, transfer, and interconnection unit, such that the size of the smallest dicing, transfer, and interconnection unit can reach the magnitude achievable by the existing process level, thereby solving the problems of difficult control of transfer dicing accuracy, slow transfer speed, and low transfer yield caused by the too small size of the existing Micro LED chips; at the same time, it also avoids the problems of difficult pick-up of Micro LED chips and mass transfer, enabling significant reduction of production costs at both the die level and the die bonding end; at the same time, it also significantly reduces the transfer frequency of the Micro LED chip array, thus reducing the production cost.

[0081] In the description of this specification, the description with reference to terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples.

[0082] The above-described embodiments merely represent several implementation manners of the present invention, and their descriptions are relatively specific and detailed, but should not be construed as a limitation to the scope of the patent of the present invention. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present invention, several modifications and improvements can still be made, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention should be subject to the appended claims.

Claims

1. A Micro LED chip array integrated structure, characterized in that Comprising: A Micro LED chip array composed of an array of X rows and Y columns of Micro LED chips; Y columns of first-polarity driving lines connected to the first electrodes of X of the Micro LED chips in each column; X rows of second-polarity driving lines connected to the second electrodes of Y of the Micro LED chips in each row; Y first-polarity electrodes connected to the first-polarity driving lines of each column; X second-polarity electrodes connected to the second-polarity driving lines of each row; And An insulating layer located between the first-polarity driving lines and the second-polarity driving lines, wherein the insulating layer is a second insulating layer, the second insulating layer covers the Micro LED chip array and the first-polarity driving lines, and the second-polarity driving lines pass through the insulating layer and are connected to the second electrodes; The Micro LED chip includes: A substrate, an epitaxial layer located on the substrate, and a conductive electrode located on the epitaxial layer; The epitaxial layer includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer sequentially disposed on the substrate, and the polarity of the first semiconductor layer is opposite to the polarity of the second semiconductor layer; The conductive electrode includes a second electrode electrically connected to the second semiconductor layer; The first-polarity driving line is disposed on the exposed first semiconductor layer and electrically connected to the first semiconductor layer; An isolation trench for isolating adjacent Micro LED chips is provided at the boundary of each Micro LED chip; The isolation trenches are provided between adjacent Micro LED chips in each column.

2. The integrated structure of the Micro LED chip array according to claim 1, characterized in that, X≥1, Y≥1, and X and Y are not both 1 at the same time.

3. The integrated structure of the Micro LED chip array according to claim 1, characterized in that, The first-polarity electrodes and the second-polarity electrodes are located on the non-light-emitting surface in the Micro LED chip array.

4. The integrated structure of the Micro LED chip array according to claim 1, wherein, Each of the first-polarity electrodes and each of the second-polarity electrodes are arranged in a staggered manner along two diagonals of the Micro LED chip array.

5. The integrated structure of the Micro LED chip array according to claim 1, characterized in that The side length of the light-emitting layer in the Micro LED chip is less than 100 um.

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