Nano Bessel laser beam emitter and its preparation method

Abstract

The present application discloses a nano-Bessel laser beam emitter and a preparation method thereof. The nano-Bessel laser beam emitter of the present application includes a first Bragg reflection layer, a light-emitting layer, and a second Bragg reflection layer. The first Bragg reflection layer is provided with a cylindrical through-hole; the light-emitting layer is disposed on the surface of the first Bragg reflection layer and is used for generating a beam; the second Bragg reflection layer is disposed on the side of the light-emitting layer away from the first Bragg reflection layer. By providing a cylindrical through-hole on the first Bragg reflection layer, the nano-Bessel laser beam emitter of the present application enables the beam to obtain a Bessel beam with a nano-scale light-emitting spot after multiple reflections by the first Bragg reflection layer and the second Bragg reflection layer, improving the size stability of the Bessel beam. At the same time, the nano-Bessel laser beam emitter has a simple structure and a small volume, and can realize the integration of a miniaturized light source.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor optoelectronic devices, and in particular, to a nano-Bessel laser beam emitter and a preparation method thereof. Background Art

[0002] As a non-diffracting beam, the Bessel beam has the special property that the initial light field remains unchanged in any plane perpendicular to the transmission direction. In recent years, it has been widely used in fields such as laser cutting, laser precision collimation, ranging, and navigation.

[0003] At present, the main methods for preparing Bessel beams are the annular slit method, the holographic method, the conical lens method, and the spherical aberration method. However, the radius of the central peak of the Bessel beams generated by these preparation methods can only reach the micron level, and the structural volume for generating Bessel beams is relatively large, making it difficult to achieve integration. Summary of the Invention

[0004] The present application aims to at least solve one of the technical problems existing in the prior art. For this purpose, the present application provides a nano-Bessel laser beam emitter, which can generate a Bessel beam with a nanoscale central peak radius, and has a simple structure and can achieve integration.

[0005] The present application also provides a preparation method of the nano-Bessel laser beam emitter.

[0006] The nano-Bessel laser beam emitter according to the first aspect embodiment of the present application includes:

[0007] A first Bragg reflection layer, which is provided with a cylindrical through hole.

[0008] A light-emitting layer, which is disposed on the surface of the first Bragg reflection layer and is used for generating a beam.

[0009] A second Bragg reflection layer, which is disposed on the side of the light-emitting layer away from the first Bragg reflection layer.

[0010] The nano-Bessel laser beam emitter according to the embodiment of the present application has at least the following beneficial effects: By providing a cylindrical through hole in the first Bragg reflection layer, after multiple reflections of the beam through the first Bragg reflection layer and the second Bragg reflection layer, a Bessel beam with a nanoscale light-emitting spot is obtained, improving the size stability of the Bessel beam. At the same time, the nano-Bessel laser beam emitter has a simple structure and a small volume, and can achieve the integration of a miniaturized light source.

[0011] According to some embodiments of the present application, the first Bragg reflection layer and the second Bragg reflection layer each include a plurality of reflection layers, and the number of reflection layers included in the first Bragg reflection layer is greater than the number of reflection layers included in the second Bragg reflection layer; wherein, each reflection layer includes a high refractive index material layer and a low refractive index material layer.

[0012] According to some embodiments of the present application, it further includes: a substrate, which is disposed on a side of the first Bragg reflection layer away from the light emitting layer.

[0013] According to some embodiments of the present application, it further includes: a growth layer, which is disposed on a side of the substrate close to the first Bragg reflection layer; a connection part, which includes an extending part and a supporting part, the extending part is embedded in the cylindrical through hole of the first Bragg reflection layer, and the supporting part is disposed on a side of the first Bragg reflection layer away from the growth layer.

[0014] According to some embodiments of the present application, the supporting part has a hexagonal frustum structure, the area of the bottom surface of the supporting part close to the growth layer is larger than the area of the bottom surface of the supporting part away from the growth layer, and the bottom surface of the supporting part away from the growth layer is used for disposing the light emitting layer.

[0015] According to some embodiments of the present application, the light emitting layer includes: an LED light source, which is disposed on a side of the first Bragg reflection layer close to the second Bragg reflection layer, and the LED light source is disposed corresponding to the cylindrical through hole; an electrode, which is disposed on a side of the LED light source away from the first Bragg reflection layer and is used to supply power to the LED light source.

[0016] According to some embodiments of the present application, the nano-Bessel laser beam emitter further includes: an antioxidant layer, which is disposed between the LED light source and the electrode and covers the side surface of the LED light source.

[0017] According to some embodiments of the present application, the nano-Bessel laser beam emitter further includes: an isolation layer, which covers the surface of the antioxidant layer and is used to separate the beams emitted by two adjacent LED light sources.

[0018] The preparation method of the nano-Bessel laser beam emitter according to the second aspect embodiment of the present application, the preparation method of the nano-Bessel laser beam emitter, includes: sequentially disposing a growth layer and a first Bragg reflector on the substrate surface by plasma-enhanced chemical vapor deposition, low-pressure chemical vapor deposition or magnetron sputtering; etching the first Bragg reflector to form a cylindrical through-hole; depositing a semiconductor material on the surface of the first Bragg reflector by metalorganic chemical vapor deposition to form a connecting portion; wherein, the connecting portion includes a protruding member and a supporting member; growing an LED structure on the surface of the supporting member to obtain an LED light source; disposing an electrode on the surface of the LED light source by thermal evaporation; wherein, the light-emitting layer includes the LED light source and the electrode; disposing a second Bragg reflector on the surface of the light-emitting layer.

[0019] The preparation method of the nano-Bessel laser beam emitter according to the embodiment of the present application has at least the following beneficial effects: the nano-Bessel laser beam emitter obtained by the above preparation method has a small volume and is convenient for realizing integration; at the same time, the preparation method is simple and can realize the large-scale production of the nano-Bessel laser beam emitter.

[0020] According to some embodiments of the present application, it further includes: depositing a metal oxide film on the side surface of the LED light source to form an antioxidant film; disposing a polymer material on the surface of the antioxidant film to form an isolation layer.

[0021] The additional aspects and advantages of the present application will be partially given in the following description, partially will become obvious from the following description, or be understood through the practice of the present application. Description of the Drawings

[0022] The following further describes the present application with reference to the drawings and embodiments, where:

[0023] Figure 1 is a schematic structural diagram of the nano-Bessel laser beam emitter according to the embodiment of the present application;

[0024] Figure 2 is Figure 1 a specific structural diagram of the first Bragg reflector in

[0025] Figure 3 is Figure 1 a specific structural diagram of the second Bragg reflector in

[0026] Figure 4 is another schematic structural diagram of the nano-Bessel laser beam emitter according to the embodiment of the present application;

[0027] Figure 5 is Figure 4 a specific structural diagram of the connecting portion in

[0028] Figure 6 It is a schematic flow chart of the preparation method of the nano-Bessel laser beam emitter according to an embodiment of the present application;

[0029] Figure 7 It is another schematic flow chart of the preparation method of the nano-Bessel laser beam emitter according to an embodiment of the present application.

[0030] Reference numerals:

[0031] The first Bragg reflection layer 100, the cylindrical through hole 110, the reflection layer 120, the high refractive index material layer 121, the low refractive index material layer 122, the light emitting layer 200, the LED light source 210, the electrode 220, the second Bragg reflection layer 300, the substrate 400, the growth layer 500, the connecting portion 600, the protruding member 610, the supporting member 620, the antioxidant layer 700, the isolation layer 800. Detailed implementation manners

[0032] The embodiments of the present application will be described in detail below. Examples of the embodiments are shown in the drawings, where the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary and are only used to explain the present application and should not be construed as a limitation of the present application.

[0033] In the description of the present application, it should be understood that with respect to the orientation description, such as up, down, front, back, left, right, etc., the orientation or positional relationship indicated is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present application.

[0034] In the description of the present application, the meaning of several is more than one, and the meaning of multiple is more than two. Understandings such as greater than, less than, exceeding, etc. do not include the present number, and understandings such as above, below, within, etc. include the present number. If the first and second are described only for the purpose of distinguishing technical features, they should not be construed as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features or implicitly indicating the sequence relationship of the indicated technical features.

[0035] In the description of the present application, unless otherwise clearly defined, words such as setting, installing, connecting, etc. should be understood in a broad sense, and those skilled in the art can reasonably determine the specific meanings of the above words in the present application in combination with the specific content of the technical solution.

[0036] In the description of the present application, the description with reference to terms such as "one embodiment", "some embodiments", "schematic embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples.

[0037] Reference is made below to Figure 1 Describe a nano-Bessel laser beam emitter according to an embodiment of the present application.

[0038] As Figure 1 shown, a nano-Bessel laser beam emitter according to an embodiment of the present application includes a first Bragg reflection layer 100, a light-emitting layer 200, and a second Bragg reflection layer 300. The first Bragg reflection layer 100 is provided with a cylindrical through-hole 110; the light-emitting layer 200 is disposed on the surface of the first Bragg reflection layer 100 for generating a beam; the second Bragg reflection layer 300 is disposed on the side of the light-emitting layer 200 away from the first Bragg reflection layer 100.

[0039] Specifically, as Figure 1 shown, the first Bragg reflection layer 100 and the second Bragg reflection layer 300 are generally rectangular plate-like structures, and a cylindrical through-hole 110 is provided in the first Bragg reflection layer 100. The beam emitted by the light-emitting layer 200 will propagate and continuously reflect in the cavity formed by the first Bragg reflection layer 100 and the second Bragg reflection layer 300. Due to the presence of the cylindrical through-hole 110 in the first Bragg reflection layer 100, a ring-shaped Bessel light spot with a central opening will eventually be formed. The diameter size of the cylindrical through-hole 110 can determine the size of the light-emitting spot. Since the size of the cylindrical through-hole 110 is between 50 and 300 nm, the size of the beam light spot obtained after reflection by the first Bragg reflection layer 100 and the second Bragg reflection layer 300 is in the nanometer range. By adjusting the size of the cylindrical through-hole 110, the size of the radius of the central peak of the Bessel beam can be adjusted.

[0040] For the nano-Bessel laser beam emitter according to an embodiment of the present application, by providing the cylindrical through-hole 110 on the first Bragg reflection layer 100, a Bessel beam with a nano-level light-emitting spot can be obtained after multiple reflections of the beam by the first Bragg reflection layer 100 and the second Bragg reflection layer 300, improving the size stability of the Bessel beam. At the same time, the nano-Bessel laser beam emitter has a simple structure and a small volume, and can realize the integration of a miniaturized light source.

[0041] In some specific embodiments of the present application, asFigures 1 to 3 The first Bragg reflection layer 100 and the second Bragg reflection layer 300 each include a plurality of reflection layers 120, and the number of reflection layers 120 included in the first Bragg reflection layer 100 is greater than the number of reflection layers 120 included in the second Bragg reflection layer 300. Among them, each reflection layer 120 includes a high-refractive-index material layer 121 and a low-refractive-index material layer 122.

[0042] Specifically, as Figures 1 to 3 shown, the first Bragg reflection layer 100 is composed of 8 reflection layers 120, and the second Bragg reflection layer 300 is composed of 6 reflection layers 120. Since the number of reflection layers 120 included in the first Bragg reflection layer 100 is greater than the number of reflection layers 120 included in the second Bragg reflection layer 300, after the light beam emitted by the light-emitting layer 200 is reflected multiple times by the first Bragg reflection layer 100 and the second Bragg reflection layer 300, it will exit from the second Bragg reflection layer 300. Among them, each reflection layer 120 is composed of a high-refractive-index material layer 121 and a low-refractive-index material layer 122, and the high-refractive-index material layer 121 and the low-refractive-index material layer 122 are arranged alternately. The high-refractive-index material layer 121 can be composed of a high-refractive-index material such as silicon nitride, and the low-refractive-index material layer 122 can be composed of a low-refractive-index material such as silicon dioxide. It can be understood that the number of reflection layers 120 included in the first Bragg reflection layer 100 and the second Bragg reflection layer 300 can be set according to requirements.

[0043] In some specific embodiments of the present application, as Figure 4 shown, the nano-Bessel laser beam emitter further includes a substrate 400, and the substrate 400 is disposed on the side of the first Bragg reflection layer 100 away from the light-emitting layer 200. Specifically, a substrate 400 is further disposed on the side of the first Bragg reflection layer 100 away from the light-emitting layer 200. The substrate 400 is generally in a rectangular plate-like structure and is used to support other structures in the nano-Bessel laser beam emitter. In the present application, the material selected for the substrate 400 is sapphire, which has advantages such as good stability and high mechanical strength. It can be understood that other semiconductor materials such as silicon and gallium arsenide can also be selected as the material of the substrate 400.

[0044] In some specific embodiments of the present application, as Figure 4 and Figure 5 shown, the nano-Bessel laser beam emitter further includes a growth layer 500 and a connection portion 600. The growth layer 500 is disposed on the side of the substrate 400 close to the first Bragg reflection layer 100; the connection portion 600 includes a protruding member 610 and a supporting member 620. The protruding member 610 is embedded in the cylindrical through-hole 110 of the first Bragg reflection layer 100, and the supporting member 620 is disposed on the side of the first Bragg reflection layer 100 away from the growth layer 500.

[0045] Specifically, as shown in Figure 4 and Figure 5 shown, a growth layer 500 is provided on one side of the substrate 400 close to the first Bragg reflection layer 100. The shape and size of the growth layer 500 are the same as those of the substrate 400. The material of the growth layer 500 is gallium nitride. It can be understood that this material can also be replaced according to requirements. A connecting portion 600 is grown above the growth layer 500. The connecting portion 600 includes two parts, an extending member 610 and a supporting member 620. The extending member 610 is a cylindrical structure and is filled in the cylindrical through hole 110 of the first Bragg reflection layer 100. The supporting member 620 is provided on the side of the first Bragg reflection layer 100 away from the growth layer 500 and is connected to the output member. A light-emitting material can be grown on the surface of the supporting member 620 to form the light-emitting layer 200. Among them, the length and width of the supporting member 620 are both larger than the diameter of the cylindrical through hole 110, and the area is about 5 to 20 times the area of the cylindrical through hole 110. The specific dimensions can be set according to requirements.

[0046] In some specific embodiments of the present application, as shown in Figure 4 and Figure 5 shown, the supporting member 620 is a hexagonal frustum structure. The area of the bottom surface of the supporting member 620 close to the growth layer 500 is larger than the area of the bottom surface of the supporting member 620 away from the growth layer 500. The bottom surface of the supporting member 620 away from the growth layer 500 is used to provide the light-emitting layer 200. Specifically, the supporting member 620 of the connecting portion 600 is a hexagonal frustum structure. The area of the hexagonal bottom surface of the supporting member 620 connected to the extending member 610 is larger than the area of the hexagonal bottom surface opposite to this hexagonal shape. The hexagonal bottom surface of the supporting member 620 away from the growth layer 500 can be used to grow the light-emitting layer 200 and serve as a patterned substrate for the growth of the light-emitting layer 200.

[0047] In some specific embodiments of the present application, as shown in Figure 4As shown, the light-emitting layer 200 includes an LED light source 210 and an electrode 220. The LED light source 210 is disposed on the side of the first Bragg reflection layer 100 close to the second Bragg reflection layer 300, and the LED light source 210 is correspondingly disposed with the cylindrical through-hole 110; the electrode 220 is disposed on the side of the LED light source 210 away from the first Bragg reflection layer 100 for supplying power to the LED light source 210. Specifically, the light-emitting layer 200 includes an LED light source 210 and an electrode 220. An LED structure is grown on the side of the support 620 away from the first Bragg reflection layer 100 to obtain the LED light source 210, and the LED light source 210 can emit light beams outward. The LED light source 210 is located above the cylindrical through-hole 110 so that the light beam emitted by the LED can be modulated by the cylindrical through-hole 110 to obtain a Bessel beam on the nanometer scale. An electrode 220 is disposed on the side of the LED light source 210 away from the first Bragg reflection layer 100, and power is supplied to the LED light source 210 through the electrode 220 so that it can emit light beams.

[0048] In some specific embodiments of the present application, as Figure 4 shown, the nano-Bessel laser beam emitter further includes an antioxidant layer 700. The antioxidant layer 700 is disposed between the LED light source 210 and the electrode 220 and covers the side surface of the LED light source 210. Specifically, the antioxidant layer 700 is disposed between the LED light source 210 and the electrode 220 and covers the side surface of the LED light source 210 for protecting the LED light source 210 from oxidation and damage. In the present application, the material of the antioxidant layer 700 is aluminum trioxide. It can be understood that other metal oxide films can also be selected as the material of the antioxidant layer 700. In addition, since the antioxidant layer 700 is coated on the side surface of the LED light source 210, it can also prevent the light beam emitted by the LED light source 210 from transmitting to both sides, so that more light beams can enter the first Bragg reflection layer 100, thereby improving the utilization rate of the light beam.

[0049] In some specific embodiments of the present application, as Figure 4 shown, the nano-Bessel laser beam emitter further includes an isolation layer 800. The isolation layer 800 covers the surface of the antioxidant layer 700 for separating the light beams emitted by two adjacent LED light sources 210. Specifically, the isolation layer 800 covers the surface of the antioxidant layer 700, and the electrode 220 covers the surfaces of the LED light source 210, the antioxidant layer 700, and the isolation layer 800. The isolation layer 800 can separate two adjacent LED light sources 210 to avoid the phenomenon of light mixing of the light beams emitted by them, which affects the quality of the Bessel beam. Among them, the isolation layer 800 can be made of a polymer material.

[0050] In some embodiments, the present application also proposes a method for manufacturing a nano-Bessel laser beam emitter, asFigure 6 as shown, including but not limited to the following steps:

[0051] Step S100: sequentially dispose a growth layer and a first Bragg reflection layer on the surface of a substrate by plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition or magnetron sputtering;

[0052] Step S200: etch the first Bragg reflection layer to form a cylindrical through hole;

[0053] Step S300: deposit a semiconductor material on the surface of the first Bragg reflection layer by metalorganic chemical vapor deposition to form a connection part; wherein, the connection part includes a protruding part and a supporting part;

[0054] Step S400: grow an LED structure on the surface of the supporting part to obtain an LED light source;

[0055] Step S500: dispose an electrode on the surface of the LED light source by thermal evaporation; wherein, the light emitting layer includes the LED light source and the electrode;

[0056] Step S600: dispose a second Bragg reflection layer on the surface of the light emitting layer.

[0057] According to the preparation method of the nano-Bessel laser beam emitter of the embodiment of the present application, the nano-Bessel laser beam emitter obtained by the above preparation method has a small volume and is convenient for realizing integration; at the same time, the preparation method is simple and can realize the large-scale production of the nano-Bessel laser beam emitter.

[0058] Specifically, as Figure 4 and Figure 6 shown, a growth layer 500 is disposed on the surface of a substrate 400 by metalorganic vapor deposition, and then a first Bragg reflection layer 100 is disposed by plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition or magnetron sputtering. The first Bragg reflection layer 100 is etched by means of electron beam lithography, inductively coupled plasma etching, nanoimprinting or focused ion beam etching to obtain a cylindrical through hole 110. Since the area size of the cylindrical through hole 110 can determine the size of the LED light source 210 and the finally formed light emitting spot, the diameter of the cylindrical through hole 110 is between 50 and 300 nm. In addition, by using the etching methods of electron beam lithography, inductively coupled plasma etching, nanoimprinting or focused ion beam etching, the opening can be realized without damaging the first Bragg reflection layer 100.

[0059] On the growth layer 500 corresponding to the cylindrical through hole 110, gallium nitride is grown by metalorganic chemical vapor deposition to form a connecting portion 600. The connecting portion 600 includes a protruding member 610 and a supporting member 620. The gallium nitride fills the cylindrical through hole 110 to form the protruding member 610, and a supporting member 620 with a hexagonal prism structure is formed above the first Bragg reflection layer 100. The size of the supporting member 620 is larger than the size of the cylindrical through hole 110, about 5 to 20 times the diameter of the cylindrical through hole 110, between 300 nm and 1 μm. Among them, the hexagonal prism structure can be obtained by first growing a hexagonal pyramid structure on the first Bragg reflection layer 100 and then performing high-temperature annealing and polishing from the top down using chemical mechanical polishing technology.

[0060] On the surface of the supporting member 620, an LED structure is grown by metalorganic chemical vapor deposition to obtain an LED light source 210. Since the area of the supporting member 620 is basically less than 1 μm 2 , the finally grown LED emission area is about 0.3 to 0.8 times the area of the supporting member 620, that is, 300 to 800 nm 2 , thus realizing the preparation of the nano-LED light source 210. Electrodes 220 are arranged on the surface of the LED light source 210 by thermal evaporation, thereby completing the preparation of the light-emitting layer 200. Finally, a second Bragg reflection layer 300 is arranged on the side of the light-emitting layer 200 away from the first Bragg reflection layer 100 by plasma-enhanced chemical vapor deposition, low-pressure chemical vapor deposition or magnetron sputtering. Among them, the thickness of the second Bragg reflection layer 300 is less than the thickness of the first Bragg reflection layer 100. Both the first Bragg reflection layer 100 and the second Bragg reflection layer 300 are composed of alternating high-reflectivity materials and low-reflectivity materials, and the thickness of each layer of material can be controlled according to requirements.

[0061] In some specific embodiments of the present application, such as Figure 4 and Figure 7 shown, the preparation method of the nano-Bessel laser beam emitter further includes but is not limited to the following steps:

[0062] Step S700: Deposit a metal oxide film on the side of the LED light source to form an antioxidant film;

[0063] Step S800: Set a polymer material on the surface of the antioxidant film to form an isolation layer.

[0064] Specifically, a metal oxide film (such as aluminum oxide) is deposited on the side of the LED light source 210 by atomic layer deposition to form an antioxidant film. The antioxidant film can protect the LED light source 210 from oxidation and damage, and can also prevent the light beam emitted by the LED light source 210 from transmitting to both sides, enabling more light beams to enter the first Bragg reflection layer 100, thereby improving the utilization rate of the light beam. A polymer material is covered on the surface of the antioxidant film to form an isolation layer 800. The isolation layer 800 is arranged between two adjacent LED light sources 210 and can prevent the light beams emitted by different LED light sources 210 from mixing together, thereby improving the quality of the Bessel beam. Among them, both the antioxidant film and the isolation layer 800 are located below the electrode 220.

[0065] The embodiments of the present application have been described in detail above with reference to the accompanying drawings. However, the present application is not limited to the above embodiments. Various changes can be made without departing from the spirit of the present application within the scope of knowledge possessed by those of ordinary skill in the art. In addition, the embodiments of the present application and the features in the embodiments can be combined with each other without conflict.

Claims

1. A nano-Bessel laser beam emitter, characterized in that Comprising: A first Bragg reflection layer, the first Bragg reflection layer being provided with cylindrical through holes; A light-emitting layer, the light-emitting layer being disposed on the surface of the first Bragg reflection layer for generating a light beam; A second Bragg reflection layer, the second Bragg reflection layer being disposed on the side of the light-emitting layer away from the first Bragg reflection layer; The size of the cylindrical through holes is between 50 and 300 nm; the light-emitting layer includes: an LED light source, the LED light source being disposed on the side of the first Bragg reflection layer close to the second Bragg reflection layer, and the LED light source being correspondingly disposed with the cylindrical through holes; A substrate, the substrate being disposed on the side of the first Bragg reflection layer away from the light-emitting layer; A connecting portion, the connecting portion including a protruding member and a supporting member, the protruding member being embedded in the cylindrical through hole of the first Bragg reflection layer, the supporting member being disposed on the side of the first Bragg reflection layer away from the substrate, and the supporting member being a hexagonal frustum structure.

2. The nano-Bessel laser beam emitter according to claim 1, wherein Both the first Bragg reflection layer and the second Bragg reflection layer include a plurality of reflection layers, the number of reflection layers included in the first Bragg reflection layer is greater than the number of reflection layers included in the second Bragg reflection layer; wherein, each reflection layer includes a high refractive index material layer and a low refractive index material layer.

3. The nano-Bessel laser beam emitter according to claim 1, characterized in that Further comprising: A growth layer, the growth layer being disposed on the side of the substrate close to the first Bragg reflection layer.

4. The nano-Bessel laser beam emitter according to claim 3, wherein The area of the bottom surface of the supporting member close to the growth layer is larger than the area of the bottom surface of the supporting member away from the growth layer, and the bottom surface of the supporting member away from the growth layer is used for disposing the light-emitting layer.

5. The nano-Bessel laser beam emitter according to claim 1, characterized in that, The light-emitting layer includes: An electrode, the electrode being disposed on the side of the LED light source away from the first Bragg reflection layer for supplying power to the LED light source.

6. The nano-Bessel laser beam emitter according to claim 5, characterized in that, The nano-Bessel laser beam emitter further includes: An antioxidant layer, the antioxidant layer being disposed between the LED light source and the electrode and covering the side surface of the LED light source.

7. The nano-Bessel laser beam emitter according to claim 6, characterized in that, The nano-Bessel laser beam emitter further includes: An isolation layer, the isolation layer covering the surface of the antioxidant layer for separating the light beams emitted by two adjacent LED light sources.

8. A method for preparing a nano-Bessel laser beam emitter, characterized in that, Comprising: Sequentially disposing a growth layer and a first Bragg reflection layer on the surface of a substrate by plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition or magnetron sputtering; Etching the first Bragg reflection layer to form cylindrical through holes; the size of the cylindrical through holes is between 50 and 300 nm; Depositing a semiconductor material on the surface of the first Bragg reflection layer by metalorganic chemical vapor deposition to form a connecting portion; wherein, the connecting portion includes a protruding member and a supporting member; the protruding member is embedded in the cylindrical through hole of the first Bragg reflection layer; the supporting member is disposed on the side of the first Bragg reflection layer away from the substrate; Growing an LED structure on the surface of the supporting member to obtain an LED light source; the supporting member is a hexagonal frustum structure; the LED light source is correspondingly disposed with the cylindrical through holes; An electrode is provided on the surface of the LED light source by thermal evaporation; wherein, the light-emitting layer includes the LED light source and the electrode; A second Bragg reflection layer is provided on the surface of the light-emitting layer.

9. The preparation method of the nano-Bessel laser beam emitter according to claim 8, characterized in that, It further includes: Depositing a metal oxide film on the side surface of the LED light source to form an antioxidant film; Providing a polymer material on the surface of the antioxidant film to form an isolation layer.

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