Micro-nano layer structure manufacturing method, processing device and electronic device

Abstract

The present application provides a method for manufacturing a micro-nano layer structure, a processing device, and an electronic device. The manufacturing method includes providing a mask member, the mask member including a first region and a second region, the magnetic field strength of the first region being greater than that of the second region; providing a substrate, the substrate including a base body and a pre-coated layer, the pre-coated layer including a colloid and magnetic particles; positioning the mask member relative to the substrate with a preset distance between the mask member and the substrate, the magnetic force of the first region driving the magnetic particles to move so that the pre-coated layer forms a patterned mask layer; the patterned mask layer including a mask portion and a spacer region; using the patterned mask layer as a mask, etching the base body to form a patterned dielectric layer; and removing the remaining patterned mask layer from the patterned dielectric layer to form a dielectric layer. The magnetic force is used to drive the magnetic particles, the mask member does not contact the pre-coated layer, the processing cleanliness is high, the yield rate is improved, the manufacturing process is simple, and the processing efficiency is improved.

Description

Technical Field

[0001] The present application relates to the technical field of patterned electronic device processing, and in particular to a method for manufacturing a micro-nano layer structure, a processing device, and an electronic device. Background Art

[0002] Nanoimprint lithography is a new micro-nanofabrication technology that overcomes the challenges of traditional photolithography in reducing feature size, offering high resolution and low cost. Therefore, it is expected to replace traditional photolithography in the future and become a key processing method in fields such as electronics, optics, and optoelectronics.

[0003] Currently, nanoimprinting uses an imprint template to perform imprinting on a substrate with a glue layer. The imprint template usually has a pattern. After the imprint template directly contacts and squeezes the glue layer, the pattern will be printed on the glue layer. The glue layer with the pattern is then solidified, and finally, after steps such as etching and peeling, the required pattern is formed on the substrate.

[0004] However, the aforementioned nanoimprinting technology has relatively complex steps and low processing efficiency, and the imprinting template may contaminate the adhesive layer, resulting in a reduced yield. Summary of the Invention

[0005] The present invention discloses a method for fabricating a micro-nano layer structure, a processing device, and an electronic device. During the processing, the mask does not contact the substrate, thereby preventing contamination of the adhesive layer on the substrate and improving the yield rate. Furthermore, the processing steps are simple and the efficiency is high.

[0006] The first aspect of the embodiment of the present application discloses a method for manufacturing a micro-nano layer structure, comprising the following steps:

[0007] Step S10: providing a mask element, wherein the mask element has magnetic permeability or magnetism, and comprises a first region and a second region that are alternately distributed, and the magnetic field strength of the first region is greater than the magnetic field strength of the second region.

[0008] Step S11: providing a substrate, the substrate comprising a base body and a pre-gelatin layer provided on the base body, the pre-gelatin layer comprising a colloid and magnetic particles doped in the colloid. The magnetic particles may be diamagnetic particles or paramagnetic particles.

[0009] Step S12: The mask member is positioned opposite the substrate, with a predetermined distance between them. The magnetic force of the first region drives the magnetic particles corresponding to the first region to move, thereby forming a patterned mask layer from the original rubber layer. The patterned mask layer includes alternating mask portions and spacer regions, with the density of magnetic particles in the mask portions being greater than that in the spacer regions. One of the mask portion and the spacer region corresponds to the first region, and the other corresponds to the second region. The magnetic force in the first region can be repulsive or attractive. When the magnetic particles are diamagnetic, the magnetic force is repulsive; when the magnetic particles are paramagnetic, the magnetic force is attractive.

[0010] Step S13: Using the patterned mask layer as a mask, etching the substrate to form a patterned dielectric layer on the substrate. Specifically, the mask portion is partially etched, the spacer is completely etched, and the substrate corresponding to the spacer is etched to form a patterned dielectric layer on the substrate.

[0011] Step S14: removing the remaining patterned mask layer on the patterned dielectric layer to form a dielectric layer. Specifically, the spacer is completely etched and the mask portion is partially etched, so removing the remaining patterned mask layer on the patterned dielectric layer actually removes the remaining mask portion on the patterned dielectric layer.

[0012] The method for fabricating a micro-nano layer structure provided in the embodiments of this application does not allow the mask to contact the original adhesive layer during the entire fabrication process. Instead, the mask is patterned by applying magnetic force to the magnetic particles within the original adhesive layer. This lack of contact between the mask and the original adhesive layer results in a high degree of cleanliness and improved yield. Furthermore, compared to existing fabrication methods, the fabrication method of the embodiments of this application eliminates the need for pre-baking, exposure, development, and post-baking steps, resulting in a simpler process, simplified fabrication steps, and improved processing efficiency.

[0013] In one embodiment, the magnetic particles are diamagnetic particles; the step of using the magnetic force of the first region to drive the magnetic particles corresponding to the first region to move includes: the first region generates a repulsive force on the diamagnetic particles, and the repulsive force drives the diamagnetic particles to move toward the region corresponding to the second region to form a mask portion corresponding to the second region, and to form a spacing region corresponding to the first region.

[0014] It can be understood that while the first region generates a repulsive force toward the corresponding diamagnetic particles, the second region, although having a weaker magnetic field strength, may also generate a repulsive force toward the corresponding diamagnetic particles. The repulsive force generated by the first region is called the first repulsive force, and the repulsive force generated by the second region is called the second repulsive force. The first repulsive force is greater than the second repulsive force, which ensures that the first repulsive force can drive the diamagnetic particles to move.

[0015] The diamagnetic particles are made of one or more of gold, silver, copper, and lead. They have the property of escaping from areas with stronger magnetic fields to areas with weaker magnetic fields. Since the magnetic field strength in the first area is greater than that in the second area, the diamagnetic particles migrate toward the area corresponding to the second area, thereby forming a mask and a spacer on the original rubber layer. When the repulsive force of the first area repels the diamagnetic particles, they avoid contact with the diamagnetic particles and the colloid, forming a convex portion on the original rubber layer, thereby reducing contamination and improving the yield rate.

[0016] In one embodiment, the magnetic particles are paramagnetic particles; the step of using the magnetic force of the first region to drive the magnetic particles corresponding to the first region to move includes: the first region generates an adsorption force on the paramagnetic particles, and the adsorption force drives the paramagnetic particles to move toward the region corresponding to the first region to form a mask portion corresponding to the first region, and to form a spacer region corresponding to the second region.

[0017] It is understood that while the first region exerts an adsorption force on the corresponding paramagnetic particles, the second region may also exert an adsorption force on the corresponding paramagnetic particles. The adsorption force exerted by the first region is referred to as the first adsorption force, and the adsorption force exerted by the second region is referred to as the second adsorption force. A greater first adsorption force than the second adsorption force ensures that the first adsorption force can drive the paramagnetic particles to move.

[0018] The paramagnetic particles are made of one or more of ferroferric oxide, iron, cobalt, and nickel. When placed in a magnetic field, they tend to migrate toward areas with stronger magnetic fields. Because the magnetic field strength in the first region is greater than that in the second region, the paramagnetic particles migrate toward the region corresponding to the first region, thereby forming a masking area and a spacer. The adsorption force of the first region attracts the paramagnetic particles without contact with the colloid, forming a masking area on the original colloid layer. This reduces contamination and improves yield.

[0019] In one embodiment, the mask portion is a convex portion that protrudes away from the substrate, and the spacer is a concave portion that is concave toward the substrate. The cross-section of the convex portion is a shape in which the height gradually decreases from the middle to both sides, similar to a convex arc. The thickness of the convex portion is greater than the thickness of the concave portion. Thus, during etching, the portion of the substrate corresponding to the convex portion is blocked by the convex portion, while the concave portion is completely etched, and the substrate corresponding to the concave portion is etched, thereby forming a patterned dielectric layer. Because the convex portion and the concave portion do not contact the mask part when they are formed, the accuracy is high. Therefore, when the convex portion is used as a mask portion to etch the substrate, the etching accuracy and yield rate are both high.

[0020] In one embodiment, the magnetic induction intensity of the mask part is between 0.1 Tesla and 50 Tesla, and the viscosity of the colloid is between 1 Pascal-second and 10,000 Pascal-second. The magnetic induction intensity of the mask part is within the above range, which can ensure that the mask part generates sufficient repulsive force on the magnetic particles, ensure the smooth formation of the protrusions, and keep the thickness of the protrusions within the range that can form a suitable micro-nano structure after etching. It is avoided that the magnetic induction intensity of the mask part is not suitable, resulting in insufficient thickness of the protrusions, which may result in subsequent etching not reaching the substrate and resulting in failure to process into a micro-nano structure; or that the protrusions are too thick, which may result in the subsequent etching of the micro-nano structure being too deep. The viscosity of the colloid of the original glue layer is within the above range, which can enable the protrusions to be formed smoothly and the thickness to be kept within the range that can be etched into a pattern. It is avoided that the protrusions fail to form, or even if they are formed, the thickness of the protrusions is not suitable.

[0021] In one embodiment, the step of causing the magnetic force of the first region to drive the magnetic particles corresponding to the first region to move includes: the magnetic force of the first region drives the magnetic particles corresponding to the first region to move the colloid to form a convex portion. The magnetic particles driving the colloid to move can specifically involve diamagnetic particles driving the colloid to move toward the region corresponding to the second region, or paramagnetic particles driving the colloid to move toward the region corresponding to the first region. The movement of the colloid forms convex and concave portions, thereby facilitating subsequent etching.

[0022] In one embodiment, the mask portion is a magnetic particle gathering portion, and the spacer region is a magnetic particle sparse portion; the magnetic particle density at the magnetic particle gathering portion is greater than the magnetic particle density at the magnetic particle sparse portion. If the magnetic particle density at the mask portion is higher, while the spacer region has no magnetic particles or has a lower magnetic particle density, then the hardness of the mask portion will be greater than the hardness of the remaining portions. During etching, the thickness of the mask portion will decrease less in the same amount of time. After the spacer region is completely etched and a portion of the substrate corresponding to the spacer region is etched, a portion of the mask portion remains, thereby forming a patterned dielectric layer. Because the magnetic particle gathering portion and the magnetic particle sparse portion do not contact the mask member when they are formed, the precision is higher. The magnetic particle gathering portion serves as the mask portion, resulting in higher etching precision and yield.

[0023] In one embodiment, the magnetic flux density of the mask element is between 0.01 Tesla and 5 Tesla, and the viscosity of the colloid is between 0.001 Pascal-seconds and 100 Pascal-seconds. The magnetic flux density of the mask element within this range ensures sufficient attraction of the magnetic particles to the mask element, ensuring smooth formation of the mask portion, while also maintaining the density of the diamagnetic particles within the mask portion within a range suitable for forming a micro-nanostructure after etching. This avoids situations where the magnetic flux density of the mask element is inappropriate, resulting in insufficient density of diamagnetic particles in the mask portion, which may prevent subsequent etching from reaching the substrate and resulting in a failure to form a micro-nanostructure; or where the diamagnetic particles are too dense in the mask portion, which may result in subsequent etching of the micro-nanostructure too deep. The viscosity of the colloid in the original glue layer is within this range, ensuring smooth formation of the mask portion and maintaining a density of diamagnetic particles within a range suitable for etching into a pattern. This avoids situations where the mask portion fails to form, or even if it is formed, has an inappropriate density of magnetic particles within the mask portion.

[0024] In one embodiment, the step of using the magnetic force of the first region to drive the movement of magnetic particles corresponding to the first region includes the step of using the magnetic force of the first region to drive the movement of magnetic particles corresponding to the first region to form a magnetic particle aggregation area. The movement of the magnetic particles can specifically involve diamagnetic particles moving toward an area corresponding to the second region, or paramagnetic particles moving toward an area corresponding to the first region. The movement of the magnetic particles forms a magnetic particle aggregation area and a magnetic particle sparse area, thereby facilitating subsequent etching.

[0025] In one embodiment, the first region generates a first magnetic force on the magnetic particles while the second region generates a second magnetic force on the magnetic particles. The first magnetic force is between 5 and 200 times greater than the second magnetic force. This ensures that the first magnetic force is greater than the second magnetic force, enabling the first magnetic force to drive the magnetic particles to move.

[0026] In one embodiment, the number of mask parts is two; the magnetic particles are diamagnetic particles; the mask part is placed opposite to the substrate, and the magnetic force of the first area drives the magnetic particles corresponding to the first area to move, including: placing the substrate between the two mask parts so that the original glue layer is opposite to one of the mask parts, and the base is opposite to the other mask part; the first repulsive force of the first area of ​​one of the mask parts, and the second repulsive force of the first area of ​​the other mask part, drive the diamagnetic particles corresponding to the first area to move.

[0027] It can be understood that the two mask elements located on the upper and lower sides of the substrate have their respective first regions facing each other, and their respective second regions facing each other. In other words, the first regions of the two mask elements are aligned in the height direction, and the second regions of the two mask elements are aligned in the height direction. Both the first repulsive force and the second repulsive force act on the diamagnetic particles, accelerating their escape to the area corresponding to the second region, thereby accelerating the formation of the mask portion and improving production efficiency.

[0028] In one embodiment, the thickness of the first region is greater than that of the second region, so that the magnetic field strength in the first region is greater than that in the second region. This difference in thickness creates a difference in magnetic field strength between the first and second regions. This difference in magnetic field strength is used to attract or repel magnetic particles, thereby forming a mask portion. The mask portion has a relatively simple structure, is easy to manufacture, and is relatively low in cost.

[0029] In one embodiment, the mask element includes a stacked mask plate and an electromagnetic element. The mask plate is made of a soft magnetic material. A first region and a second region are formed on the mask plate, and the thickness of the first region and the second region are equal. The electromagnetic element includes multiple electromagnets, each corresponding to the first region, and the pattern formed by the multiple electromagnets is the same shape as the first region. After the mask plate is magnetized by the electromagnetic element, the magnetic field intensity in the first region is greater than that in the second region. As a result, the mask plate has a simple structure, is easy to process, and has a strong structural strength, which also ensures the smooth formation of the mask portion.

[0030] A second aspect of the present application provides an electronic device comprising: a base layer, a dielectric layer, and a functional layer, wherein the dielectric layer and the functional layer are sequentially stacked on a surface of the base layer, and the dielectric layer is manufactured using any of the manufacturing methods described in the first aspect of the present application. The dielectric layer manufactured using the aforementioned manufacturing method has a high yield and low cost.

[0031] The third aspect of the present application provides a processing device for a micro-nano layer structure, which is used in any one of the manufacturing methods in the first aspect of the present application, wherein the processing device includes: a mask part; the mask part has magnetic conductivity or magnetism, and the mask part includes a first area and a second area that are staggered, and the magnetic field strength of the first area is greater than the magnetic field strength of the second area.

[0032] In one embodiment, the thickness of the first region is greater than that of the second region, so that the magnetic field strength in the first region is greater than that in the second region. This difference in thickness creates a difference in magnetic field strength between the first and second regions. This difference in magnetic field strength is used to attract or repel magnetic particles, thereby forming a mask portion. The mask portion has a relatively simple structure, is easy to manufacture, and is relatively low in cost.

[0033] In one embodiment, the mask element has a first surface and a second surface disposed opposite each other. The mask element includes multiple blocking areas and multiple hollow areas. The hollow areas extend through the first and second surfaces. The blocking areas and the hollow areas are interlaced with each other. The blocking areas form a pattern identical to that of the mask portion, or the hollow areas form a pattern identical to that of the mask portion. As a result, the mask element is lightweight and compact.

[0034] In one embodiment, the mask element includes multiple protrusions and multiple recesses, with the area between any two adjacent recesses forming a protrusion. The pattern formed by the multiple protrusions is the same as that of the mask element, or the pattern formed by the multiple recesses is the same as that of the mask element. This provides a strong structural strength for the mask element, making it less susceptible to deformation and extending its service life.

[0035] In one embodiment, the mask member includes a first plate and a second plate stacked together, the second plate having a first surface and a second surface disposed opposite to each other, the second plate including a plurality of shielding areas and a plurality of hollow areas, the hollow areas extending through the first and second surfaces, and the area between any two adjacent hollow areas forming a shielding area; the first plate and the second plate are fixedly connected, the plurality of shielding areas and the first plate forming a plurality of protrusions, and the plurality of hollow areas and the first plate forming a plurality of recesses; the pattern formed by the plurality of protrusions is the same as that of the mask portion, or the pattern formed by the plurality of recesses is the same as that of the mask portion. This facilitates processing and reduces costs. The first plate is used to enhance the structural strength of the entire mask member, making the mask member less susceptible to deformation, thereby extending the service life of the mask member.

[0036] In one embodiment, the mask is made of a permanent magnet. Permanent magnets are inherently magnetic and can generate a magnetic field without external interference. Specifically, permanent magnets may be samarium cobalt magnets, neodymium iron boron magnets, ferrite magnets, alnico magnets, or iron chromium cobalt magnets. Permanent magnets are relatively stable, require no external force, and are therefore convenient to use.

[0037] In one embodiment, the mask plate includes a stacked mask plate and an electromagnetic component, wherein the mask plate is made of a soft magnetic material. The mask plate includes a first preparatory area and a second preparatory area. When the electromagnetic component is energized to generate magnetism, the first preparatory area and the second preparatory area become magnetic. The first preparatory area is the first region, and the second preparatory area is the second region. The soft magnetic material can be made of one or more of pure iron, low-carbon steel, silicon steel sheet, permalloy, ferrite, etc. The soft magnetic material is relatively flexible and can be combined with the electromagnetic component, so that the magnetic strength and presence of the soft magnetic material can be controlled according to actual needs, making it highly applicable.

[0038] In one embodiment, the electromagnetic component includes multiple electromagnets, each corresponding to a first region, and the pattern formed by the multiple electromagnets is the same shape as the first region. The first region is thicker than the second region. This, combined with the electromagnetic component corresponding to the first region, allows the magnetic field strength of the first region to be significantly greater than the magnetic field strength of the second region. This results in the first repulsive force being significantly greater than the second repulsive force, or the first attractive force being significantly greater than the second attractive force, thereby increasing the speed of mask formation and improving production efficiency.

[0039] In one embodiment, the electromagnetic element includes a first group of electromagnets and a second group of electromagnets. The first group of electromagnets corresponds to the first region, and the pattern formed by the first group of electromagnets is the same shape as the first region. The second group of electromagnets corresponds to the second region, and the pattern formed by the second group of electromagnets is the same shape as the second region. In other words, the multiple electromagnets are evenly stacked on top of the mask plate, resulting in a relatively simple structure of the mask element and ease of manufacture.

[0040] In one embodiment, the mask plate includes a stacked mask plate and an electromagnetic element, wherein the mask plate is made of a soft magnetic material; the mask plate includes a first preparatory area and a second preparatory area, and the first and second preparatory areas have the same thickness; when the electromagnetic element is energized to generate magnetism, the first and second preparatory areas become magnetic, the first preparatory area being the first region, and the second preparatory area being the second region; the electromagnetic element includes a plurality of electromagnets, the plurality of electromagnets corresponding to the first region, and the pattern formed by the plurality of electromagnets having the same shape as the first region. In other words, in this embodiment, the thickness of the mask plate is uniform, and the electromagnetic element corresponds to the first region, so that the magnetic field strength in the first region is greater than that in the second region. As a result, the mask plate has a simple structure, is easy to process, and has a strong structural strength, which can also ensure the smooth formation of the mask portion.

[0041] The manufacturing method of the micro-nano layer structure provided by the embodiment of the present application is that during the entire manufacturing process, the mask part does not contact the original rubber layer, but uses magnetic force to adsorb or repel the magnetic particles in the original rubber layer, thereby performing patterning. The mask part does not contact the original rubber layer, so the processing cleanliness is high and the yield rate is improved. Contactless processing can also be applied to pattern processing of smaller sizes, such as patterns below 20 nanometers. In addition, compared with existing manufacturing methods, the manufacturing method of the embodiment of the present application does not require steps such as pre-baking, exposure, development, and post-baking. The process is relatively simple, which simplifies the manufacturing steps and improves processing efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] The following is an introduction to the drawings used in the embodiments of this application.

[0043] Figure 1 It is a schematic diagram of a partial structural cross-section of an electronic device.

[0044] Figure 2 yes Figure 1 Flowchart of the method for manufacturing the micro-nano layer structure shown.

[0045] Figure 3 yes Figure 1 A top view of an embodiment of a mask element for a method of manufacturing a micro-nano layer structure is shown.

[0046] Figures 3a to 3f yes Figure 3 Schematic diagram of the side structure of the mask element provided by the method for manufacturing the micro-nano layer structure shown in FIG.

[0047] Figure 4 yes Figure 2 Schematic diagram of the structure of the substrate provided by the method for manufacturing the micro-nano layer structure shown in FIG.

[0048] Figures 5a to 5f yes Figure 2 Schematic diagram of the structure in which the mask element and the substrate are relative to each other in the method for manufacturing the micro-nano layer structure shown in FIG.

[0049] Figures 6a to 6f It corresponds to Figures 5a to 5f A schematic diagram of a mask member and a substrate, and using the mask member to form a mask portion on the substrate.

[0050] Figure 7a and Figure 7b yes Figure 2 Another structural schematic diagram in which the mask element and the substrate are opposite to each other in the method for manufacturing the micro-nano layer structure is shown in FIG.

[0051] Figure 8a and Figure 8b It corresponds to Figure 7a and Figure 7b Schematic diagram of the middle mask element using a magnetic field to form a mask portion on the substrate.

[0052] Figures 9a to 9f yes Figure 2 Schematic diagram of another structure in which the mask element and the substrate are opposite to each other in the method for manufacturing the micro-nano layer structure shown in FIG.

[0053] Figures 10a to 10f It corresponds to Figures 9a to 9f Schematic diagram of the middle mask element using a magnetic field to form a mask portion on the substrate.

[0054] Figure 11a and Figure 11b yes Figure 2 Schematic diagram of another structure in which the mask element and the substrate are opposite to each other in the method for manufacturing the micro-nano layer structure shown in FIG.

[0055] Figure 12a and Figure 12b It corresponds to Figure 11a and Figure 11bSchematic diagram of the middle mask element using a magnetic field to form a mask portion on the substrate.

[0056] Figure 13a and Figure 13b yes Figure 2 Another structural schematic diagram in which the mask element and the substrate are opposite to each other in the method for manufacturing the micro-nano layer structure is shown in FIG.

[0057] Figure 14a and Figure 14b It corresponds to Figure 13a and Figure 13b Schematic diagram of the middle mask element using a magnetic field to form a mask portion on the substrate.

[0058] Figure 15a and Figure 15b yes Figure 2 Schematic diagram of another structure in which the mask element and the substrate are opposite to each other in the method for manufacturing the micro-nano layer structure shown in FIG.

[0059] Figure 16a and Figure 16b It corresponds to Figure 15a and Figure 15b Schematic diagram of the middle mask element using a magnetic field to form a mask portion on the substrate.

[0060] Figure 17a yes Figures 6a to 6f 、 Figures 8a to 8b 、 Figures 10a to 10f Schematic diagram of the structure after the patterned mask layer formed in is etched.

[0061] Figure 17b yes Figures 12a to 12b 、 Figures 14a to 14b 、 Figures 16a to 16b Schematic diagram of the structure after the patterned mask layer formed in is etched.

[0062] Figure 18 yes Figure 17a and Figure 17b Schematic diagram of a structure in which the remaining mask portion on the patterned dielectric layer is removed. DETAILED DESCRIPTION

[0063] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0064] An embodiment of the present application provides an electronic device, which includes a patterned dielectric layer. The electronic device can be used for the production of electronic devices in the fields of electricity, optics, and optoelectronics, for example, for the preparation of semiconductor electronic devices, gratings, etc. Semiconductor electronic devices include light-emitting diode chips (light-emitting diode, LED), organic light-emitting diodes (organic light-emitting diode, OLED), thin film transistors or field effect transistors, etc. The above electronic devices are suitable for electronic devices such as mobile phones, display screens and computers. For example, they are used in mobile phone display screens. Among them, the conductive circuit layer and the insulating functional layer have patterns of nanometer size, which can be called a micro-nano layer structure.

[0065] See also Figure 1 and Figure 2 , Figure 1 It is a schematic diagram of a partial structural cross section of an electronic device. Figure 2 yes Figure 1 Flowchart of the method for manufacturing the micro-nano layer structure shown.

[0066] The electronic device 10 of this embodiment includes a base layer 11, a dielectric layer 12, and a functional layer 13. The dielectric layer 12 and the functional layer 13 are sequentially stacked on the surface of the base layer. The base layer 11 can be a glass layer. The dielectric layer 12 can be made of silicon dioxide.

[0067] This embodiment is described by taking the manufacture of a light emitting diode chip as an example. The functional layer 13 is a multi-layer structure, for example, including an N or P type semiconductor layer, a metal layer, an insulating layer, a light emitting layer, a step layer and other layer structures. Figure 1 In the figure, only the dielectric layer 12 and the functional layer 13 are shown for simple illustration.

[0068] In other embodiments, the electronic device is a thin film transistor (TFT), which can be applied to an array substrate of a liquid crystal display (LCD) or an organic light emitting diode display (OLED), and the functional layer is a multi-layer structure, such as a gate, a source / drain, a channel layer, etc.

[0069] The micro-nano layer structure in this embodiment is mainly an insulating dielectric layer 12. This embodiment provides a method for manufacturing the micro-nano layer structure, which includes the following steps.

[0070] Step S10: Providing a mask element. The mask element is magnetically permeable or magnetic. The mask element includes alternating first and second regions, where the magnetic field strength of the first region is greater than that of the second region. Specifically, the mask element includes multiple first regions and multiple second regions, with a second region between every two adjacent first regions; that is, the first and second regions are alternately distributed. The magnetic field strength of the first region is greater than that of the second region, and the magnetic field strength of the second region can be as low as zero. The first and second regions are used to form a patterned mask layer on the substrate of the electronic device.

[0071] See Figure 3 、 Figures 3a to 3f , Figure 3 yes Figure 1 The top view of an embodiment of a mask member for a method of manufacturing a micro-nano layer structure is shown, wherein only one form of the mask member is illustrated and does not represent the only form of the mask member. Figures 3a to 3f yes Figure 3 Schematic diagram of the side structure of the mask element provided by the method for manufacturing the micro-nano layer structure shown in FIG.

[0072] See Figure 3a In the first embodiment of the present application, the mask member 100 is in the shape of a thin plate and is a permanent magnet. The permanent magnet itself has magnetism and can generate a magnetic field without external interference. The permanent magnet can specifically be a samarium cobalt magnet, a neodymium iron boron magnet, a ferrite magnet, an aluminum nickel cobalt magnet or an iron chromium cobalt magnet, etc. The magnetism of the permanent magnet is relatively stable, does not require external force assistance, and is relatively convenient to use.

[0073] The mask element 100 is in the form of a thin plate, comprising a first surface 103 and a second surface 104 disposed opposite each other, as well as a plurality of hollowed-out areas 105 and a plurality of shielding areas 106. The hollowed-out areas 105 extend through the first and second surfaces 103 and 104 and are interlaced with the shielding areas 106. In practice, the hollowed-out areas 105 extend through the first and second surfaces 103 and 104, with shielding areas 106 formed elsewhere outside the hollowed-out areas 105. The shielding areas 106 form the first region 101, while the hollowed-out areas 105 form the second region 102. The second region 102 lacks magnetic or permeable material, resulting in a weaker magnetic field strength than the first region 101, or even no magnetic field at all. This results in a greater magnetic field strength in the first region 101 than in the second region 102.

[0074] In one implementation of the first embodiment, the mask member 100 is non-magnetic but magnetically conductive, and magnetism is transferred to the mask member via a magnet or electromagnet. In another implementation, the mask member 100 is a plate with magnetic particles doped within it. The magnetic particles can be permanent magnetic particles; for example, a mixture of silicone and magnetic particles is solidified to form the plate-shaped mask member 100.

[0075] See Figure 3b In the second embodiment of the mask element of the present application, the mask element 200 includes a first surface 201 and a second surface 202. The first surface 201 is provided with a plurality of recesses 203 extending toward the second surface 202. The recesses 203 do not penetrate the second surface 202. Protrusions 204 are formed between adjacent recesses 203. The protrusions 204 and recesses 203 are alternately distributed. The protrusions 204 constitute the first region 101, and the recesses 203 constitute the second region 102. In this embodiment, the mask element is a permanent magnet and is integrally formed. Because the thickness of the recesses 203 is less than that of the protrusions 204, the magnetic field strength at the recesses 203 is weaker than that at the protrusions 204, thereby achieving a magnetic field strength in the first region 101 that is greater than that in the second region 102. By setting the recess 203, the magnetic field strength can be differentiated, and the area between the bottom wall of the recess 203 and the second surface 202 can serve as a support for the mask element 200, ensuring that the mask element 200 has a strong structural strength, is not easily deformed, and has a long service life.

[0076] In one embodiment, the mask 200 includes a first plate 210 and a second plate 220 laminated and fixed to the first plate 210. The first plate 210 is non-magnetic, and the second plate 220 is the same as the mask of the first embodiment, and can be a permanent magnet or have magnetic conductivity. The first plate 210 is used to enhance the strength of the second plate 220, so that the entire mask 200 is not easily deformed and has a longer service life. After the second plate 220 is laminated and fixed to the first plate 210, the structure is the same as Figure 3b The structure of the second embodiment shown in FIG is the same. In this case, the mask element 200 specifically includes a recess 203 and a protrusion 204. The protrusion 204 is the first region 101, and the recess 203 is the second region 102. A detailed description is not provided here. In other embodiments, the first plate 210 may also be magnetic.

[0077] Of course, the mask element 200 of this embodiment can also be non-magnetic, generating magnetism through external magnetic conduction. In another embodiment, an electromagnet is positioned near the mask element 200. When energized, the electromagnet magnetizes the soft magnetic material, thereby generating a magnetic field. The soft magnetic material can be made of one or more of pure iron, low-carbon steel, silicon steel sheet, Permalloy, ferrite, etc. The magnetic properties of soft magnetic materials are relatively flexible, and the magnetic strength and presence of the soft magnetic material can be controlled according to actual needs, making it highly adaptable.

[0078] In the third embodiment of the mask component of the present application, the mask component includes a mask plate and an electromagnetic component, the mask plate and the electromagnetic component are stacked and arranged at intervals, the mask plate includes a first preparation area and a second preparation area, the first preparation area and the second preparation area are magnetic when the electromagnetic component is energized to generate magnetism, the first preparation area is the first area, and the second preparation area is the second area. In one embodiment, the first preparation area includes a plurality of shielding areas, the second preparation area includes a plurality of hollow areas, the plurality of shielding areas and the plurality of hollow areas are staggered, the plurality of shielding areas are the plurality of first areas, and the plurality of hollow areas are the plurality of second areas. In another embodiment, the first preparation area includes a plurality of protrusions, the second preparation area includes a plurality of recesses, the plurality of protrusions and the plurality of recesses are staggered, the plurality of protrusions are the plurality of first areas, and the plurality of recesses are the second area.

[0079] The mask plate is a soft magnetic material. While not inherently magnetic, it possesses magnetic conductivity. When placed in a magnetic field, the soft magnetic material can be magnetized, thereby becoming magnetic. Specifically, the soft magnetic material is magnetized by placing it in an electromagnetic field. The structure of the mask plate in this embodiment can be any of the above-described embodiments.

[0080] The electromagnetic component includes multiple electromagnets arranged at intervals, each corresponding to at least one of the shielding areas. It can also be understood that the pattern formed by the multiple electromagnets is identical to the pattern formed by the multiple shielding areas. The electromagnetic component also includes a main body (not shown) that supports the multiple electromagnets. The main body can be a plate, column, or other component capable of supporting the electromagnetic component.

[0081] In one embodiment, electromagnets are provided at positions of the electromagnetic component corresponding to the multiple shielding areas and the multiple hollow areas, which can be divided into a first group of electromagnets and a second group of electromagnets; wherein, the electromagnets corresponding to the multiple shielding areas are referred to as the first group of electromagnets, and the electromagnets corresponding to the multiple hollow areas are referred to as the second group of electromagnets. The pattern formed by the first group of electromagnets is identical to the pattern formed by the multiple shielding areas, and the pattern formed by the second group of electromagnets is identical to the pattern formed by the multiple hollow areas; and the magnetism of the first group of electromagnets is greater than or equal to the magnetism of the second group of electromagnets. wherein, one shielding area is a first region, and one hollow area is a second region, that is, the number of both the first region and the second region is multiple.

[0082] Electromagnetic components include electromagnets, which consist of an iron core and a coil. The iron core is a soft magnetic material. A coil is wound around the core. Applying power to the coil magnetizes the core, giving the electromagnet its magnetic properties and generating a magnetic field. Soft magnetic materials can be made from one or more of pure iron, low-carbon steel, silicon steel sheets, Permalloy, ferrite, and other materials. Soft magnetic properties are flexible, allowing the strength and presence of soft magnetic properties to be controlled as needed, making them highly adaptable.

[0083] See Figure 3cIn one implementation of the third embodiment, the mask member 300 includes a mask plate 310 and an electromagnetic member 320, which are stacked and arranged at intervals. The mask plate 310 of this embodiment is a soft magnet. The soft magnet itself does not have magnetism, but can be magnetized by the electromagnetic member. The magnetized soft magnet generates a magnetic field, thereby generating a magnetic force on the magnetic particles. The mask plate 310 includes multiple shielding areas 311 and multiple hollow areas 312, and the multiple shielding areas 311 and the multiple hollow areas 312 are arranged in an alternating manner; one shielding area 311 is a first area 101, and one hollow area 312 is a second area 102. In other words, the number of first areas 101 and second areas 102 is also multiple.

[0084] The electromagnetic element 320 includes a plurality of electromagnets 321 arranged at intervals. The electromagnets 321 are divided into a first group of electromagnets 322 and a second group of electromagnets 323. The first group of electromagnets 322 corresponds to the first region 101, and the second group of electromagnets 323 corresponds to the second region 102. Each electromagnet 321 includes an iron core 324 and a coil 325. The iron core 324 is a soft magnetic material. The coil 325 is wound around the iron core 324. When the coil 325 is energized, the iron core 324 is magnetized, making the electromagnet 321 magnetic, thereby generating a magnetic field.

[0085] An electromagnetic component 320 is set above the mask plate 310 and energized. After energization, the mask plate 310 is in an electromagnetic field. Since the thickness of the shielding area 311 is greater than that of the hollow area 312, the shielding area 311 is magnetically conductive and produces stronger magnetism, while the hollow area 312 is non-magnetic. Therefore, the magnetism in the hollow area 312 is weaker, thereby forming a difference in magnetic field strength between the first area 101 and the second area 102 on the mask element 300.

[0086] See Figure 3dIn another implementation of the third embodiment, the mask member 400 includes a mask plate 410 and an electromagnetic member 420, which are stacked and arranged in intervals. The mask plate 410 is a soft magnetic material and includes a plurality of protrusions 411 and a plurality of recesses 412, which are arranged in an alternating manner. The electromagnetic member 420 includes a plurality of electromagnets 421 arranged in intervals. The electromagnets 421 are provided at positions on the electromagnetic member 420 corresponding to the plurality of protrusions 411 and the plurality of recesses 412. The plurality of electromagnets 421 corresponding to the plurality of protrusions 411 are referred to as a first group of electromagnets 422, and the plurality of electromagnets 421 corresponding to the plurality of recesses 412 are referred to as a second group of electromagnets 423. The pattern formed by the first group of electromagnets 422 is identical to the pattern formed by the plurality of protrusions 411, and the pattern formed by the second group of electromagnets 423 is identical to the pattern formed by the plurality of recesses 412. Furthermore, the magnetic properties of the first group of electromagnets 422 are greater than or equal to those of the second group of electromagnets 423. The protrusions 411 are the first region 101, and the recesses 412 are the second region 102.

[0087] The electromagnetic component 420 includes multiple electromagnets 421, and the electromagnet 421 includes an iron core 424 and a coil 425. The iron core 424 is a soft magnetic body. The coil 425 is wound around the iron core 424, and then the coil 425 is energized to magnetize the iron core 424, making the electromagnet 421 magnetic, thereby generating a magnetic field.

[0088] In another embodiment of the third embodiment, the mask plate 410 includes a first plate 413 and a second plate 414 laminated and fixed to the first plate 413. The first plate 413 is non-magnetic, and the second plate 414, similar to the mask member of the first embodiment, can be a permanent magnet or have magnetic conductivity. The first plate 413 is used to enhance the strength of the second plate 414, making it less prone to deformation and having a longer service life. After the second plate 414 is laminated and fixed to the first plate 413, the structure is the same as that of the above embodiment, including a recess 412 and a protrusion 411. The protrusion 411 forms the first region 101, and the recess 412 forms the second region 102. A detailed description is not provided here.

[0089] An electromagnetic component 420 is arranged above the mask plate 410. At this time, the mask plate 410 is in an electromagnetic field. The thickness of the protrusion 411 is greater than the thickness of the recess 412. Therefore, the magnetism at the recess 412 is weaker, resulting in a difference in magnetic field strength between the first area 101 and the second area 102 on the mask element 400.

[0090] See Figure 3eIn another specific implementation of the third embodiment, the mask member 500 includes a mask plate 510 and an electromagnetic member 520, and the mask plate 510 and the electromagnetic member 520 are stacked and arranged at intervals. The mask plate 510 is a soft magnetic body, and the mask plate 510 includes multiple shielding areas 511 and multiple hollow areas 512, and the multiple shielding areas 511 and the multiple hollow areas 512 are staggered. The electromagnetic member 520 includes multiple electromagnets 521 arranged at intervals, and the multiple electromagnets 521 correspond to the shielding areas 511. It can also be understood that the pattern formed by the multiple electromagnets 521 is exactly the same as the pattern formed by the multiple shielding areas 511. The electromagnetic member 520 also includes a main body (not shown) that carries the multiple electromagnets. Specifically, the multiple electromagnets are all fixed to the main body. The shielding area 511 forms the first area 101, and the hollow area 512 forms the second area 102.

[0091] The electromagnetic component 520 includes multiple electromagnets 521, and the electromagnet 521 includes an iron core 522 and a coil 523. The iron core 522 is a soft magnetic body. The coil 523 is wound around the iron core 522, and then the coil 523 is energized to magnetize the iron core 522, making the electromagnet 521 magnetic, thereby generating a magnetic field.

[0092] In this embodiment, Figure 3c The difference between the mask element shown in FIG5 is that electromagnets are only provided at positions corresponding to the shielding area 511. That is, the mask element 500 has only one set of electromagnets 521, corresponding to the shielding area 511. Therefore, the magnetic field strength in the first area 101 is greater than that in the second area 102. After the soft magnetic material is magnetized, the magnetic field strength in the first area 101 is greater than that in the second area 102. In addition, there is no magnetic or magnetically conductive material in the hollow area 512 (the thickness of the hollow area 512 is less than that of the shielding area 511). Therefore, the magnetic field strength in the hollow area 512 is weaker than that in the shielding area 511. The difference in magnetic field strength between the first area 101 and the second area 102 is increased, which can more efficiently achieve the processing of microstructures on electronic devices.

[0093] See Figure 3f In a fourth embodiment of a mask element, the mask element 600 includes a mask plate 610 and an electromagnetic element 620, which are stacked and spaced apart. The mask plate 610 is a soft magnetic material with uniform thickness. The electromagnetic element 620 includes a plurality of electromagnets 621 arranged at intervals. The plurality of electromagnets 621 correspond to the first region 101. It can also be understood that the pattern formed by the plurality of electromagnets 621 is exactly the same as the pattern formed by the plurality of first regions 101. When the plurality of electromagnets 621 are energized, the mask plate 610 becomes magnetic, i.e., the positions on the mask plate 610 corresponding to the plurality of electromagnets 621 are the first regions 101, and the other positions are the second regions 102, and the positions are staggered. The first regions 101 and the second regions 102 are staggered.

[0094] The mask plate 610 is a thin plate including a first surface 613 and a second surface 614, both of which are planes. The electromagnet 621 is spaced apart from the first surface 613. The multiple electromagnets 621 are spaced apart, and the pattern formed by the multiple electromagnets 621 is located in the first region 101. That is, after the coil is energized, the position of the mask plate 610 in the magnetic field is magnetized, and the area opposite the electromagnet 621 is the first region 101, and the area between the two electromagnets 621 is the second region 102. Because the electromagnet 621 is located at the corresponding position of the first region 101, and the position corresponding to the second region 102 is not provided with a magnet, the intensity of the magnetic field in the first region 101 is greater than the intensity of the magnetic field in the second region 102.

[0095] In this embodiment, the magnetism of the first region 101 and the magnetism of the second region 102 are distributed in a peak-and-trough pattern. Although there is no corresponding electromagnet 621 in the second region 102, there is magnetism between the two electromagnets 621, but the magnetic field is weaker. Therefore, the magnetic field in the second region 102 is weaker and located in the trough position, while the magnetic field in the first region 101 is stronger and located in the peak position. In other words, after the electromagnet 621 is energized to magnetize the mask 610, strong and weak magnetism are alternately distributed on the mask 610. The region corresponding to the strong magnetism is the first region 101, and the region corresponding to the weak magnetism is the second region 102. It can be understood that the area of ​​the region opposite the electromagnet 621 is equal to the projected area of ​​the electromagnet 621 on the first surface 613, or the area of ​​the region opposite the electromagnet 621 is greater than the projected area of ​​the electromagnet 621 on the first surface 613.

[0096] Figure 4 yes Figure 2 Schematic diagram of the structure of the substrate provided by the method for manufacturing the micro-nano layer structure shown in FIG.

[0097] Step S11: Provide a substrate 700. The substrate 700 includes a base 710 and a pre-gelatin layer 720 disposed on the base 710. The pre-gelatin layer 720 includes a colloid 721 and magnetic particles 722 doped in the colloid 721. The magnetic particles 722 are diamagnetic particles or paramagnetic particles. The magnetic particles 722 are doped in the colloid 721. The diamagnetic particles are made of one or more of gold, silver, copper, and lead. When placed in a magnetic field, the diamagnetic particles will escape to areas with weaker magnetic fields or areas without magnetic fields. The paramagnetic particles are made of one or more of ferroferric oxide, iron, cobalt, and nickel. When placed in a magnetic field, the paramagnetic particles tend to move to areas with stronger magnetic fields. The magnetic particles 722 are evenly distributed in the colloid 721.

[0098] The adhesive layer 720 is formed on a surface of the substrate 710 by spin coating. In this embodiment, the substrate 710 is any one of a silicon dioxide plate, a glass plate, a silicon plate, an indium phosphide plate, and a gallium arsenide plate. The adhesive layer 720 is made of a hot stamping adhesive or a UV stamping adhesive. The hot stamping adhesive includes a thermoplastic stamping adhesive or a thermosetting stamping adhesive. The thermoplastic stamping adhesive is one or a combination of polymethacrylate, polystyrene, and polycarbonate; the thermosetting stamping adhesive is one or a combination of polyvinylphenol and propylene phthalate oligomer. The UV stamping adhesive includes one or a combination of acrylic, polystyrene, and epoxy.

[0099] Step S12: Patterning the original adhesive layer, placing the mask element opposite to the substrate with a preset distance between the mask element and the substrate, and the magnetic force of the first region drives the magnetic particles corresponding to the first region to move, so that the original adhesive layer forms a patterned mask layer; the patterned mask layer includes staggered mask portions and spacer regions, and the density of magnetic particles in the mask portion is greater than the density of magnetic particles in the spacer region; one of the mask portion and the spacer region corresponds to the first region, and the other corresponds to the second region. It should be noted that, based on the actual functional requirements of the dielectric layer, the mask portions corresponding to the multiple first regions, that is, any two or more of the multiple mask portions, can be interconnected at a certain edge position to form a pattern of the dielectric layer to accommodate the design of the metal routing. Similarly, any two or more of the multiple spacer regions can be interconnected at a certain edge position.

[0100] See Figure 5a 、 Figure 5b 、 Figure 5c 、 Figure 5d 、 Figure 5e and Figure 5f , Figures 5a to 5f yes Figure 2 Schematic diagram showing the mask element and the substrate relative to each other in the method for manufacturing the micro-nano layer structure shown in FIG. Figures 5a to 5f The mask pieces in Figures 3a to 3f The mask part in.

[0101] See Figure 6a 、 Figure 6b 、 Figure 6c 、 Figure 6d 、 Figure 6e and Figure 6f , Figures 6a to 6f It corresponds to Figures 5a to 5f Schematic diagram of a mask member and a substrate, and forming a mask portion on the substrate using the mask member. That is, a schematic diagram of several implementation methods of the first to fourth embodiments in step S12.

[0102] In one embodiment, step S12 specifically includes patterning the original rubber layer 720, where the first region generates a repulsive force on the diamagnetic particles 726, which drives the diamagnetic particles 726 toward the region corresponding to the second region, forming a mask portion 723 corresponding to the second region, and forming a spacer region 724 corresponding to the first region. The mask portion 723 is a convex portion 723a that protrudes away from the substrate, and the spacer region 724 is a concave portion that is concave toward the substrate. The convex portion 723a is thicker than the concave portion.

[0103] The repulsive force generated by the first region 101 is called the first repulsive force. The first repulsive force drives the diamagnetic particles 726 to shift, forming convex portions 723a and concave portions in the original rubber layer 720, thereby forming a patterned mask layer 725 in the original rubber layer 720. The convex portions 723a are the mask portions 723. In other words, the magnetic particles 722 in this case are diamagnetic particles 726, the magnetic force of the first region 101 is called the first magnetic force, and the first magnetic force is the first repulsive force. The convex portions 723a are formed in the region of the original rubber layer 720 corresponding to the second region 102.

[0104] Although the magnetic field strength of the second region 102 is relatively small, it is possible that a second magnetic force acting on the diamagnetic particles 726 may be generated. The second magnetic force is a second repulsive force, wherein the second repulsive force is less than the first repulsive force, and the second repulsive force can approach 0. This allows the diamagnetic particles 726 corresponding to the first region 101 to quickly move to correspond to the second region 102, thereby speeding up the preparation efficiency. The first repulsive force is between 5 and 200 times the second repulsive force. In this embodiment, the first repulsive force is 100 times the second repulsive force. In other embodiments, the first repulsive force is 5 times, 10 times, 20 times, 40 times, 70 times, 80 times, 110 times, 200 times, etc., of the second repulsive force.

[0105] The first region 101 and the second region 102 are adjacent to each other, so the farther the second region 102 is from the adjacent first region 101, the weaker the influence of the magnetic field of the first region 101 is, and the closer the second region 102 is to the adjacent first region 101, the stronger the influence of the magnetic field of the first region 101 is. Therefore, the magnetic repulsion force in the center of the second region 102 is the smallest, and the reverse magnetic particles 726 tend to move to the position corresponding to the center of the second region 102. The movement of the reverse magnetic particles 726 will drive the movement of the colloid. Therefore, the cross-section of the convex portion 723a finally formed is a shape with a height gradually decreasing from the middle to both sides, similar to a convex arc.

[0106] Step S12 is more specifically as follows: The substrate 700 is placed under the mask element, with the original adhesive layer 720 positioned below the mask element. The mask element is then moved toward the substrate 700. When the distance between the mask element and the substrate 700 reaches a predetermined distance, the mask element stops moving. This causes the first region 101 to generate a first repulsive force on the diamagnetic particles in the original adhesive layer 720. This first repulsive force drives the diamagnetic particles to shift, forming a convex portion 723a in the original adhesive layer 720 corresponding to the second region 102, thereby forming a patterned mask layer 725 on the original adhesive layer 720.

[0107] The preset distance between the mask element opposite the original adhesive layer 720 and the substrate 700 is determined based on the height of the subsequently formed protrusion 723a, and is set based on the fact that the protrusion 723a does not contact the mask element. Specifically, the preset distance between the mask element located above the substrate 700 in the figure and the substrate 700 is determined based on the height of the protrusion 723a. Here, the preset distance refers to the distance between the surface of the substrate 710 facing the original adhesive layer 720 and the surface of the mask element facing the substrate 700, which can be understood as the distance between the mask element and the original adhesive layer 720. For example, the height of the protrusion 723a is 3 mm, specifically, the distance between the highest point of the protrusion 723a and the surface of the substrate 710 facing the original adhesive layer 720 is 3 mm. Therefore, the upper mask element is set to a distance of at least 3 mm from the substrate 700, and can be specifically set to 4 mm, 5 mm, 7 mm, etc.

[0108] Because the magnetic particles are diamagnetic particles 726, the magnetic field of the mask element generates a first repulsive force on the diamagnetic particles 726 located therein. Since the magnetic field strength of the first region 101 of the mask element is greater than the magnetic field strength of the second region 102, the diamagnetic particles 726, upon being acted upon by the first repulsive force, migrate from the region of the original rubber layer 720 corresponding to the first region 101 toward the region corresponding to the second region 102, where the magnetic field is weaker. This migration of the diamagnetic particles 726 also drives the corresponding colloid 721 to move, causing the original rubber layer 720 corresponding to the first region 101 to become thinner, forming a spacer 724. The portion of the original rubber layer 720 corresponding to the second region 102 bulges away from the substrate 710, forming a protrusion 723a, thereby forming a patterned mask layer 725 on the original rubber layer 720.

[0109] In this embodiment, the magnetic induction intensity of the mask element ranges from 0.1 Tesla to 50 Tesla. For example, the magnetic induction intensity of the mask element is 0.1 Tesla, 5 Tesla, 10 Tesla, 15 Tesla, 25 Tesla, 35 Tesla, 45 Tesla, or 50 Tesla.

[0110] The magnetic induction intensity of the mask element is within the above range, which ensures that the mask element exerts sufficient repulsive force on the magnetic particles, ensuring the smooth formation of the protrusion 723a, while also maintaining the thickness of the protrusion 723a within the range that allows for the formation of a suitable micro-nanostructure after etching. This avoids situations where the magnetic induction intensity of the mask element is inappropriate, resulting in the protrusion 723a being insufficiently thick, which may result in subsequent etching not reaching the substrate and thus preventing the micro-nanostructure from being formed; or where the protrusion 723a is too thick, which may result in the micro-nanostructure being etched too deeply.

[0111] The viscosity of the colloid 721 of the original rubber layer 720 ranges from 1 Pa·s to 100 Pa·s. For example, the viscosity of the colloid 721 of the original rubber layer 720 is 1 Pa·s, 5 Pa·s, 10 Pa·s, 20 Pa·s, 500 Pa·s, 2000 Pa·s, 4000 Pa·s, 6000 Pa·s, 8000 Pa·s, 100 Pa·s, etc.

[0112] The viscosity of the colloid 721 of the original adhesive layer 720 is within the above range, so that the convex portion 723a can be smoothly formed and the thickness can be kept within the range that can be etched into the pattern, thereby avoiding the failure of the convex portion 723a to be formed, or even if it is formed, the thickness of the convex portion 723a is not appropriate.

[0113] In this embodiment, the mask part is opposite to the original adhesive layer 720 of the substrate 700. Specifically, the mask part is opposite to the surface of the original adhesive layer 720 facing away from the base 710, so that the distance between the mask part and the original adhesive layer 720 is closer, so that the magnetic repulsive force can better act on the magnetic particles, so that the protrusion 723a can be quickly formed, thereby speeding up the production progress.

[0114] Figure 6a In the figure, since the magnetic field strength of the blocking area 106 (first area 101) of the mask part 100 is greater than the magnetic field strength of the hollow area 105 (second area 102), after the reverse magnetic particles 726 in the original rubber layer 720 are acted upon by the first repulsive force, the reverse magnetic particles 726 in the area corresponding to the blocking area 106 on the original rubber layer 720 move toward the area corresponding to the hollow area 105 with a weaker magnetic field. During the movement of the reverse magnetic particles 726, the corresponding colloid 721 will be driven to move, so that the area corresponding to the original rubber layer 720 and the blocking area 106 becomes thinner to form a gap area 724, and the part corresponding to the original rubber layer 720 and the hollow area 105 protrudes away from the substrate 710 to form a protrusion 723a (mask part 723), thereby causing the original rubber layer 720 to form a patterned mask layer 725.

[0115] Figure 6bIn the figure, since the magnetic field strength of the protrusion 204 (first area 101) of the mask part 200 is greater than the magnetic field strength of the recess 203 (second area 102), after the reverse magnetic particles 726 in the original rubber layer 720 are acted upon by the first repulsive force, the reverse magnetic particles 726 in the area corresponding to the protrusion 204 on the original rubber layer 720 move toward the area corresponding to the recess 203 where the magnetic field is weaker. During the movement of the reverse magnetic particles 726, the corresponding colloid 721 will be driven to move, so that the area corresponding to the original rubber layer 720 and the protrusion 204 becomes thinner to form a spacer area 724, and the part corresponding to the original rubber layer 720 and the recess 203 protrudes away from the substrate 710 to form a protrusion 723a (mask part 723), thereby causing the original rubber layer 720 to form a patterned mask layer 725.

[0116] Figure 6c In the process, since the magnetic field strength of the blocking area 311 (first area 101) of the mask part 300 is greater than the magnetic field strength of the hollow area 312 (second area 102), after the reverse magnetic particles 726 in the original rubber layer 720 are acted upon by the first repulsive force, the reverse magnetic particles 726 in the area corresponding to the blocking area 311 on the original rubber layer 720 move toward the area corresponding to the hollow area 312 where the magnetic field is weaker. During the movement of the reverse magnetic particles 726, the corresponding colloid 721 will be driven to move, so that the area corresponding to the original rubber layer 720 and the blocking area 311 becomes thinner to form a gap area 724, and the part corresponding to the original rubber layer 720 and the hollow area 312 bulges away from the substrate 710 to form a convex portion 723a, thereby causing the original rubber layer 720 to form a patterned mask layer 725.

[0117] Figure 6d In the figure, since the electromagnetic component 420 of the mask component 400 generates a magnetic field after being energized, the mask plate 410 is magnetic, and the magnetic field strength of the protrusion 411 (first area 101) is greater than the magnetic field strength of the recess 412 (second area 102). Therefore, after the reverse magnetic particles 726 in the original rubber layer 720 are acted upon by the first repulsive force, the reverse magnetic particles 726 in the area corresponding to the protrusion 411 on the original rubber layer 720 move toward the area corresponding to the recess 412 where the magnetic field is weaker. During the movement of the reverse magnetic particles 726, the corresponding colloid 721 will be driven to move, so that the area corresponding to the original rubber layer 720 and the protrusion 411 becomes thinner to form a spacer area 724, and the part of the original rubber layer 720 corresponding to the recess 412 protrudes away from the substrate 710 to form a protrusion 723a (mask part 723), thereby causing the original rubber layer 720 to form a patterned mask layer 725.

[0118] Figure 6eIn the figure, since the electromagnetic component 520 of the mask component 500 generates a magnetic field after being energized, the mask plate 510 is magnetic, and the magnetic field strength of the blocking area 511 (first area 101) is greater than the magnetic field strength of the hollow area 512 (second area 102). Therefore, after the reverse magnetic particles 726 in the original rubber layer 720 are acted upon by the first repulsive force, the reverse magnetic particles 726 in the area corresponding to the blocking area 511 on the original rubber layer 720 move toward the area corresponding to the hollow area 512 with a weaker magnetic field. During the movement of the reverse magnetic particles 726, the corresponding colloid 721 will be driven to move, so that the area corresponding to the original rubber layer 720 and the blocking area 511 becomes thinner to form a gap area 724, and the part corresponding to the original rubber layer 720 and the hollow area 512 protrudes away from the substrate 710 to form a protrusion 723a (mask part 723), so that the original rubber layer 720 forms a patterned mask layer 725.

[0119] Figure 6f In the figure, since the electromagnetic component 620 of the mask component 600 generates a magnetic field after being energized, the mask plate 610 is magnetic, and the magnetic field strength of the first area 101 is greater than the magnetic field strength of the second area 102. Therefore, after the reverse magnetic particles 726 are acted upon by the first repulsive force, the reverse magnetic particles 726 in the area corresponding to the first area 101 on the original rubber layer 720 move toward the area corresponding to the second area 102 with a weaker magnetic field. During the movement of the reverse magnetic particles 726, the corresponding colloid 721 will be driven to move, so that the area corresponding to the original rubber layer 720 and the first area 101 becomes thinner to form a spacer area 724, and the part corresponding to the original rubber layer 720 and the second area 102 bulges away from the substrate 710 to form a convex portion 723a (mask portion 723), thereby causing the original rubber layer 720 to form a patterned mask layer 725.

[0120] See Figure 7a and Figure 7b , Figure 7a and Figure 7b yes Figure 2 Another structural schematic diagram of the mask and substrate relative to each other in the method for manufacturing the micro-nano layer structure is shown in FIG. Figure 7a The mask piece in Figure 3a The mask parts in Figure 7b The mask piece in Figure 3f In other embodiments, the mask member located above the substrate 700 may also be a Figures 3b to 3e The mask member located below the substrate 700 may also be a mask member shown in any one of the above. Figures 3b to 3e Any one of the mask elements shown.

[0121] See Figure 8a and Figure 8b , Figure 8a and Figure 8b It corresponds to Figure 7a and Figure 7b Schematic diagram of the middle mask element using a magnetic field to form a mask portion on the substrate.

[0122] In another embodiment, there are two mask elements, and the magnetic particles are diamagnetic particles. Step S12 specifically includes: placing the mask element opposite the substrate, wherein the magnetic force of the first region drives the magnetic particles corresponding to the first region to move, including placing the substrate between the two mask elements such that the original glue layer faces one of the mask elements and the base faces the other mask element; the first repulsive force of the first region of one mask element and the second repulsive force of the first region of the other mask element drive the magnetic particles corresponding to the first region to move.

[0123] Although the magnetic field strength of the second regions 102 of the two masking elements is relatively small, it is possible that the aforementioned second magnetic force acting on the diamagnetic particles 726 may be generated. The second region 102 of one masking element generates a third repulsive force on the diamagnetic particles 726 in the original rubber layer 720, while the second region 102 of the other masking element generates a fourth repulsive force on the diamagnetic particles 726 in the original rubber layer 720. The second magnetic force includes a third repulsive force and a fourth repulsive force. However, the third repulsive force is much smaller than the first repulsive force, and the fourth repulsive force is much smaller than the second repulsive force. The third and fourth repulsive forces can approach zero, and the first, second, third, and fourth repulsive forces are generated simultaneously. Therefore, the second magnetic force is much smaller than the first magnetic force, allowing the diamagnetic particles 726 corresponding to the first region 101 to quickly move to the corresponding second region 102, thereby accelerating preparation efficiency. The first repulsive force is between 5 and 200 times the third repulsive force, and the second repulsive force is between 5 and 200 times the fourth repulsive force.

[0124] In this embodiment, the first repulsive force is 100 times the third repulsive force, and the second repulsive force is 100 times the fourth repulsive force. In other embodiments, the first repulsive force is 5, 10, 20, 40, 70, 80, 110, 200, etc. times the third repulsive force, and the second repulsive force is 5, 10, 20, 40, 70, 80, 110, 200, etc. times the fourth repulsive force.

[0125] The first repulsive force and the second repulsive force drive the diamagnetic particles 726 to shift, forming convex portions 723a and concave portions in the original rubber layer 720, thereby forming a patterned mask layer 725 in the original rubber layer 720. The convex portions 723a are the mask portions 723. In other words, the magnetic particles 722 are now diamagnetic particles 726, the first magnetic force includes the first repulsive force and the second repulsive force, and the convex portions 723a are formed in the region of the original rubber layer 720 corresponding to the second region 102.

[0126] Because the magnetic particles are diamagnetic particles 726, the magnetic field of the mask element generates a first repulsive force and a second repulsive force on the diamagnetic particles 726 therein. Because the magnetic field strength of the first region 101 of the mask element is greater than that of the second region 102, the diamagnetic particles 726, when subjected to the first and second repulsive forces, migrate from the region of the original rubber layer 720 corresponding to the first region 101 toward the region corresponding to the second region 102, where the magnetic field is weaker. This migration of the diamagnetic particles 726 also drives the corresponding colloid 721 to move, causing the original rubber layer 720 corresponding to the first region 101 to become thinner, forming a spacer 724. The portion of the original rubber layer 720 corresponding to the second region 102 bulges away from the substrate 710, forming a protrusion 723a, thereby forming a patterned mask layer 725 on the original rubber layer 720.

[0127] Step S12 is more specifically as follows: The substrate 700 is placed between two masking elements, such that the adhesive layer 720 of the substrate 700 faces one of the masking elements, and the base 710 of the substrate 700 faces the other masking element. Both masking elements are then moved toward the substrate 700. When the distance between the masking element above the substrate 700 and the substrate 700 reaches a first predetermined distance, the movement of the upper masking element is stopped. When the distance between the masking element below the substrate 700 and the substrate 700 reaches a second predetermined distance, the movement of the masking element below the substrate 700 is stopped. So that the first area 101 of one mask part generates a first repulsive force on the diamagnetic particles in the original rubber layer 720; the first area 101 of another mask part generates a second repulsive force on the diamagnetic particles in the original rubber layer 720; the first repulsive force and the second repulsive force drive the diamagnetic particles to shift, so that the area corresponding to the second area 102 of the original rubber layer 720 forms a convex portion 723a, so that the original rubber layer 720 forms a patterned mask layer 725.

[0128] The first preset distance between the mask element opposite the original adhesive layer 720 and the substrate 700 is determined based on the height of the subsequently formed protrusion 723a, and is set based on the fact that the protrusion 723a does not contact the mask element. Specifically, the first preset distance between the mask element located above the substrate 700 in the figure and the substrate 700 is determined based on the height of the protrusion 723a. Here, the first preset distance refers to the distance between the surface of the base 710 facing the original adhesive layer 720 and the surface of the mask element facing the substrate 700. For example, the height of the protrusion 723a is 3 mm, specifically, the distance between the highest point of the protrusion 723a and the surface of the base 710 facing the original adhesive layer 720 is 3 mm. Therefore, the upper mask element is moved to a distance of at least 3 mm from the substrate 700. Specifically, the distance can be set to 4 mm, 5 mm, 7 mm, etc.

[0129] The second preset distance between the mask element opposite the base 710 and the substrate 700 is based on the absence of contact between the base 710 and the mask element. In other words, the second preset distance between the mask element located below the substrate 700 and the substrate 700 is based on the absence of contact between the two. The second preset distance here refers to the distance between the surface of the base 710 facing away from the pre-gelatin layer 720 and the surface of the mask element located below the substrate 700 facing the substrate 700. For ease of control, the second preset distance is set to 2 mm, 3 mm, 4 mm, and so on.

[0130] In this embodiment, the magnetic induction intensity of the mask element ranges from 0.1 Tesla to 50 Tesla. For example, the magnetic induction intensity of the mask element is 0.1 Tesla, 5 Tesla, 10 Tesla, 15 Tesla, 25 Tesla, 35 Tesla, 45 Tesla, or 50 Tesla.

[0131] The magnetic induction intensity of the mask element is within the above range, which ensures that the mask element exerts sufficient repulsive force on the magnetic particles, ensuring the smooth formation of the protrusion 723a, while also maintaining the thickness of the protrusion 723a within the range that allows for the formation of a suitable micro-nanostructure after etching. This avoids situations where the magnetic induction intensity of the mask element is inappropriate, resulting in the protrusion 723a being insufficiently thick, which may result in subsequent etching not reaching the substrate and thus preventing the micro-nanostructure from being formed; or where the protrusion 723a is too thick, which may result in the micro-nanostructure being etched too deeply.

[0132] The viscosity of the colloid 721 of the original rubber layer 720 ranges from 1 Pa·s to 100 Pa·s. For example, the viscosity of the colloid 721 of the original rubber layer 720 is 1 Pa·s, 5 Pa·s, 10 Pa·s, 20 Pa·s, 500 Pa·s, 2000 Pa·s, 4000 Pa·s, 6000 Pa·s, 8000 Pa·s, 100 Pa·s, etc.

[0133] The viscosity of the colloid 721 of the original adhesive layer 720 is within the above range, so that the convex portion 723a can be smoothly formed and the thickness can be kept within the range that can be etched into the pattern, thereby avoiding the failure of the convex portion 723a to be formed, or even if it is formed, the thickness of the convex portion 723a is not appropriate.

[0134] In this embodiment, one mask part is opposite to the original adhesive layer 720 of the substrate 700, specifically, one mask part is opposite to the surface of the original adhesive layer 720 facing away from the base 710, and the other mask part is opposite to the base 710 of the substrate 700, specifically, the other mask part is opposite to the surface of the base 710 facing away from the original adhesive layer 720, and the first areas 101 of the two mask parts are opposite to each other, and the second areas 102 of the two mask parts are opposite to each other, so that both mask parts can generate a repulsive force on the diamagnetic particles 726. The two work together, and the repulsive force is stronger, so that the diamagnetic particles move faster from the area corresponding to the first area 101 to the area corresponding to the second area 102, so that the protrusion 723a is formed quickly, thereby speeding up the production progress.

[0135] Figure 8a In the embodiment, since the magnetic field strength of the shielding areas 106 (first area 101) of the two mask members 100 is greater than the magnetic field strength of the hollow area 105 (second area 102), the diamagnetic particles 726 in the original rubber layer 720 are subjected to the first repulsive force exerted by the upper mask member 100 and the second repulsive force exerted by the lower mask member 100. As a result, the diamagnetic particles 726 in the original rubber layer 720 corresponding to the shielding areas 106 of the two mask members 100 move toward the area with a weaker magnetic field. The area corresponding to the hollow area 105 of the two mask parts 100 moves, and during the movement of the reverse magnetic particles 726, the corresponding colloid 721 will be driven to move, so that the area corresponding to the original rubber layer 720 and the blocking area 106 of the two mask parts 100 becomes thinner to form a spacing area 724, and the part corresponding to the original rubber layer 720 and the hollow area 105 of the two mask parts 100 protrudes away from the substrate 710 to form a convex portion 723a, thereby forming the original rubber layer 720 into a patterned mask layer 725.

[0136] Figure 8b In the embodiment, after the electromagnetic element 620 is energized, the mask plate 610 is magnetized and a magnetic field is formed. The magnetic field strength of the first region 101 of the mask element 600 is greater than the magnetic field strength of the second region 102. Therefore, the diamagnetic particles 726 in the original rubber layer 720 are subjected to the first repulsive force exerted by the upper mask element 600 and the second repulsive force exerted by the lower mask element 600. The diamagnetic particles 726 in the original rubber layer 720 corresponding to the first regions 101 of the two mask elements 600 move toward the region with a greater magnetic field strength. The area corresponding to the second area 102 of the two weak mask parts 600 moves, and during the movement of the reverse magnetic particles 726, the corresponding colloid 721 will be driven to move, so that the original glue layer 720 and the area corresponding to the first area 101 of the two mask parts 600 become thinner to form a spacer area 724, and the part corresponding to the original glue layer 720 and the second area 102 of the two mask parts 600 protrudes away from the substrate 710 to form a protrusion 723a, thereby making the original glue layer 720 form a patterned mask layer 725.

[0137] See Figure 9a 、 Figure 9b 、 Figure 9c 、 Figure 9d 、 Figure 9e and Figure 9f , Figures 9a to 9f yes Figure 2 Schematic diagram of another structure in which the mask element and the substrate are opposite to each other in the method for manufacturing the micro-nano layer structure shown in FIG. Figures 9a to 9f The mask pieces in Figures 3a to 3f The mask part in.

[0138] See Figure 10a 、 Figure 10b 、 Figure 10c 、 Figure 10d 、 Figure 10e and Figure 10f , Figure 10a and Figure 10f It corresponds to Figures 9a to 9f Schematic diagram of the middle mask element using a magnetic field to form a mask portion on the substrate.

[0139] In another embodiment, the magnetic particles 722 are paramagnetic particles 727. Step S12 specifically includes: the first region 101 generates an adsorption force on the paramagnetic particles 727, which drives the paramagnetic particles 727 toward the region corresponding to the first region 101, forming a mask portion 723 corresponding to the first region 101, and forming a spacer region 724 corresponding to the second region 102. The mask portion 723 is a convex portion 723a that protrudes away from the substrate, and the spacer region 724 is a concave portion that is concave toward the substrate. The convex portion 723a is thicker than the concave portion.

[0140] The adsorption force generated by the first region 101 is called the first adsorption force. The first adsorption force drives the paramagnetic particles 727 to shift, forming convex portions 723a and concave portions in the original rubber layer 720. The convex portions 723a serve as mask portions 723, thereby forming a patterned mask layer 725 in the original rubber layer 720. In other words, in this case, the magnetic particles 722 are paramagnetic particles 727, and the magnetic force generated by the first region 101 is called the first magnetic force. The first magnetic force is the first adsorption force, and the convex portions 723a are formed in the region of the original rubber layer 720 corresponding to the first region 101.

[0141] Although the magnetic field strength in the second region 102 is relatively low, it may still generate a second magnetic force acting on the paramagnetic particles 727. This second magnetic force is a second adsorption force, but the second adsorption force is much smaller than the first adsorption force and approaches zero. This allows the paramagnetic particles 727 corresponding to the second region 102 to quickly move to the corresponding first region 101, thereby improving preparation efficiency.

[0142] The first adsorption force is between 5 and 200 times the second adsorption force. In this embodiment, the first adsorption force is 100 times the second adsorption force. In other embodiments, the first adsorption force is 5, 10, 20, 40, 70, 80, 110, 200, etc. times the second adsorption force.

[0143] It can be understood that the adsorption force in the center of the first region 101 is the largest, and the paramagnetic particles 727 tend to move to the position corresponding to the center of the first region 101. Therefore, the cross-section of the convex portion 723a finally formed is a shape with a height gradually decreasing from the middle to both sides, similar to a convex arc.

[0144] Step S12 more specifically includes placing the substrate 700 under the mask element, with the pre-coated layer 720 positioned below the mask element. The mask element is then moved toward the substrate 700. When the distance between the mask element and the substrate 700 reaches a predetermined distance, the mask element stops moving. This allows the first region 101 to exert a first attraction force on the paramagnetic particles in the pre-coated layer 720. This first attraction force drives the diamagnetic particles to shift, forming a convex portion 723a in the pre-coated layer 720 corresponding to the first region 101, thereby forming a patterned mask layer 725 on the pre-coated layer 720.

[0145] The preset distance is determined based on the height of the subsequently formed protrusion 723a and is set based on the fact that the protrusion 723a does not contact the mask element. Specific preset distances are described in the above embodiment and will not be repeated here.

[0146] Because the magnetic particles are paramagnetic particles 727, the mask's magnetic field generates a first attraction force on the paramagnetic particles 727 therein. Because the magnetic field strength of the mask's first region 101 is greater than that of the second region 102, the paramagnetic particles 727, upon being acted upon by the first attraction force, migrate from the region of the original rubber layer 720 corresponding to the second region 102 toward the region corresponding to the first region 101, where the magnetic field is stronger. This movement of the paramagnetic particles 727 also causes the corresponding colloid 721 to move, thinning the original rubber layer 720 corresponding to the second region 102 to form a spacer 724. The portion of the original rubber layer 720 corresponding to the first region 101 bulges away from the substrate 710, forming a protrusion 723a, thereby forming a patterned mask layer 725 from the original rubber layer 720.

[0147] In this embodiment, the magnetic induction intensity of the mask element ranges from 0.1 Tesla to 50 Tesla. For example, the magnetic induction intensity of the mask element is 0.1 Tesla, 5 Tesla, 10 Tesla, 15 Tesla, 25 Tesla, 35 Tesla, 45 Tesla, or 50 Tesla.

[0148] The magnetic induction intensity of the mask element is within the above range, which ensures that the mask element has sufficient adsorption force on the magnetic particles, ensuring the smooth formation of the protrusion 723a, while also maintaining the thickness of the protrusion 723a within the range that allows the formation of a suitable micro-nanostructure after etching. This avoids situations where the magnetic induction intensity of the mask element is inappropriate, resulting in the protrusion 723a being insufficiently thick, which may result in subsequent etching not reaching the substrate and thus failing to form the micro-nanostructure; or where the protrusion 723a is too thick, which may result in the micro-nanostructure being etched too deeply.

[0149] The viscosity of the colloid 721 of the original rubber layer 720 ranges from 1 Pa·s to 100 Pa·s. For example, the viscosity of the colloid 721 of the original rubber layer 720 is 1 Pa·s, 5 Pa·s, 10 Pa·s, 20 Pa·s, 500 Pa·s, 2000 Pa·s, 4000 Pa·s, 6000 Pa·s, 8000 Pa·s, 100 Pa·s, etc.

[0150] The viscosity of the colloid 721 of the original adhesive layer 720 is within the above range, so that the convex portion 723a can be smoothly formed and the thickness can be kept within the range that can be etched into the pattern, thereby avoiding the failure of the convex portion 723a to be formed, or even if it is formed, the thickness of the convex portion 723a is not appropriate.

[0151] In this embodiment, the mask part is opposite to the original adhesive layer 720 of the substrate 700. Specifically, the mask part is opposite to the surface of the original adhesive layer 720 facing away from the base 710, so that the distance between the mask part and the original adhesive layer 720 is closer, but the mask part is not in contact with the original adhesive layer, so that the adsorption force acts better on the magnetic particles, so that the protrusion 723a is quickly formed, thereby speeding up the production progress.

[0152] Figure 10a In the figure, since the magnetic field strength of the shielding area 106 (first area 101) of the mask part 100 is greater than the magnetic field strength of the hollow area 105 (second area 102), after the paramagnetic particles 727 in the original rubber layer 720 are affected by the first adsorption force, the paramagnetic particles 727 in the area corresponding to the hollow area 105 on the original rubber layer 720 move toward the area corresponding to the shielding area 106 with a stronger magnetic field. During the movement of the paramagnetic particles 727, the corresponding colloid 721 will be driven to move, so that the area corresponding to the original rubber layer 720 and the hollow area 105 becomes thinner to form a spacer area 724, and the part corresponding to the original rubber layer 720 and the shielding area 106 bulges away from the substrate 710 to form a convex portion 723a, thereby causing the original rubber layer 720 to form a patterned mask layer 725.

[0153] Figure 10bIn the figure, since the magnetic field strength of the protrusion 204 (first area 101) of the mask part 200 is greater than the magnetic field strength of the recess 203 (second area 102), after the paramagnetic particles 727 in the original rubber layer 720 are acted upon by the first adsorption force, the paramagnetic particles 727 in the area corresponding to the recess 203 on the original rubber layer 720 move toward the area corresponding to the protrusion 204 with a stronger magnetic field. During the movement of the paramagnetic particles 727, the corresponding colloid 721 will be driven to move, so that the area corresponding to the original rubber layer 720 and the recess 203 becomes thinner to form a spacer area 724, and the part of the original rubber layer 720 corresponding to the protrusion 204 protrudes away from the substrate 710 to form a protrusion 723a, thereby causing the original rubber layer 720 to form a patterned mask layer 725.

[0154] Figure 10c In the figure, since the magnetic field strength of the blocking area 311 (first area 101) of the mask part 300 is greater than the magnetic field strength of the hollow area 312 (second area 102), after the paramagnetic particles 727 in the original rubber layer 720 are affected by the first adsorption force, the paramagnetic particles 727 in the area corresponding to the hollow area 312 on the original rubber layer 720 move toward the area corresponding to the blocking area 311 with a stronger magnetic field. During the movement of the paramagnetic particles 727, the corresponding colloid 721 will be driven to move, so that the area corresponding to the original rubber layer 720 and the hollow area 312 becomes thinner to form a spacer area 724, and the part of the original rubber layer 720 corresponding to the blocking area 311 bulges away from the substrate 710 to form a convex portion 723a, thereby causing the original rubber layer 720 to form a patterned mask layer 725.

[0155] Figure 10d In the figure, since the magnetic field strength of the protrusion 411 (first area 101) of the mask part 400 is greater than the magnetic field strength of the recess 412 (second area 102), after the paramagnetic particles 727 in the original rubber layer 720 are acted upon by the first adsorption force, the paramagnetic particles 727 in the area corresponding to the recess 412 on the original rubber layer 720 move toward the area corresponding to the protrusion 411 with a stronger magnetic field. During the movement of the paramagnetic particles 727, the corresponding colloid 721 will be driven to move, so that the area corresponding to the original rubber layer 720 and the recess 412 becomes thinner to form a spacer area 724, and the part of the original rubber layer 720 corresponding to the protrusion 411 protrudes away from the substrate 710 to form a protrusion 723a, thereby causing the original rubber layer 720 to form a patterned mask layer 725.

[0156] Figure 10eIn the figure, since the magnetic field strength of the blocking area 511 (first area 101) of the mask part 500 is greater than the magnetic field strength of the hollow area 512 (second area 102), after the paramagnetic particles 727 in the original rubber layer 720 are affected by the first adsorption force, the paramagnetic particles 727 in the area corresponding to the hollow area 512 on the original rubber layer 720 move toward the area corresponding to the blocking area 511 with a stronger magnetic field. During the movement of the paramagnetic particles 727, the corresponding colloid 721 will be driven to move, so that the area corresponding to the original rubber layer 720 and the hollow area 512 becomes thinner to form a spacing area 724, and the part of the original rubber layer 720 corresponding to the blocking area 511 bulges away from the substrate 710 to form a convex portion 723a, thereby causing the original rubber layer 720 to form a patterned mask layer 725.

[0157] Figure 10f In the figure, since the magnetic field strength of the first area 101 of the mask part 600 is greater than the magnetic field strength of the second area 102, after the paramagnetic particles 727 in the original rubber layer 720 are affected by the first adsorption force, the paramagnetic particles 727 in the area corresponding to the second area 102 on the original rubber layer 720 move toward the area corresponding to the first area 101 with a weaker magnetic field. During the movement of the paramagnetic particles 727, the corresponding colloid 721 will be driven to move, so that the area corresponding to the original rubber layer 720 and the second area 102 becomes thinner to form a spacer area 724, and the part of the original rubber layer 720 corresponding to the first area 101 bulges away from the substrate 710 to form a convex portion 723a, thereby causing the original rubber layer 720 to form a patterned mask layer 725.

[0158] See Figure 11a and Figure 11b , Figure 11a and Figure 11b yes Figure 2 Schematic diagram of another structure in which the mask element and the substrate are opposite to each other in the method for manufacturing the micro-nano layer structure shown in FIG. Figure 11a and Figure 11b The mask pieces in Figure 3a and Figure 3b In other embodiments, the mask element may also be used. Figures 3c to 3f The mask part in.

[0159] See Figure 12a and Figure 12b , Figure 12a and Figure 12b It corresponds to Figure 11a and Figure 11b Schematic diagram of the middle mask element using a magnetic field to form a mask portion on the substrate.

[0160] In another embodiment of the present application, the substrate 700a includes a substrate 700a including a base 710a and a pre-gelatin layer 720a provided on the base 710a. The pre-gelatin layer 720a includes a colloid 721a and magnetic particles 722a. The magnetic particles 722a are diamagnetic particles or paramagnetic particles. The magnetic particles 722a are doped in the colloid 721a. The diamagnetic particles are made of one or more of gold, silver, copper, and lead. When the diamagnetic particles are in a magnetic field, they will escape to an area with a weaker magnetic field or an area without a magnetic field. The paramagnetic particles are made of one or more of ferroferric oxide, iron, cobalt, and nickel. When the paramagnetic particles are in a magnetic field, they will tend to move to an area with a stronger magnetic field.

[0161] That is, the structure of the substrate 700a is substantially the same as that of the substrate 700 in the above embodiment, except that the viscosity range of the original adhesive layer 700a is different, which will be described in detail below.

[0162] Step S12 specifically includes patterning the original rubber layer 720a, where the first region 101 generates a repulsive force on the diamagnetic particles 726a. This repulsive force drives the diamagnetic particles 726a toward the region corresponding to the second region 102, forming a mask portion 723b corresponding to the second region 102, and forming a spacer region 724b corresponding to the first region 101. The mask portion 723b is a concentrated area for magnetic particles, while the spacer region 724b is a sparse area for magnetic particles. The density of magnetic particles in the concentrated area is greater than that in the sparse area. The mask is placed opposite the substrate 700a. The first magnetic force generated by the first region 101 is a first repulsive force, and the second magnetic force generated by the second region 102 is a second repulsive force. The second repulsive force is less than the first repulsive force and approaches zero.

[0163] The repulsive force generated by the first region 101 is called the first repulsive force. The first repulsive force drives the diamagnetic particles 726a to shift, causing the original rubber layer 720a to form a mask portion 723b (a region where magnetic particles are concentrated) and a spacer region 724b (a region where magnetic particles are sparse), thereby forming a patterned mask layer 725a in the original rubber layer 720a. In other words, the magnetic particles 722a at this time are diamagnetic particles 726a, the first magnetic force is the first repulsive force, and the mask portion 723b is formed in the region corresponding to the original rubber layer 720a and the second region 102. The mask portion 723b has the same thickness as the original rubber layer 720a, but the number of diamagnetic particles 726a is increased. In other words, the diamagnetic particles 726a are concentrated in the mask portion 723b.

[0164] Although the magnetic field strength of the second region 102 is relatively small, it is possible that a second magnetic force will be generated on the diamagnetic particles 726a. The second magnetic force is a second repulsive force, wherein the second repulsive force is less than the first repulsive force, and the second repulsive force can approach 0. This allows the diamagnetic particles 726a corresponding to the first region 101 to quickly move to correspond to the second region 102, thereby speeding up the preparation efficiency. The first repulsive force is between 5 and 200 times the second repulsive force. In this embodiment, the first repulsive force is 100 times the second repulsive force. In other embodiments, the first repulsive force is 5, 10, 20, 40, 70, 80, 110, 200, etc. times the second repulsive force.

[0165] Step S12 more specifically includes: placing the substrate 700a below the mask element, with the original adhesive layer 720a positioned below the mask element. The mask element is then moved toward the substrate 700a. When the distance between the mask element and the substrate 700a reaches a predetermined distance, the mask element stops moving. This causes the first region 101 to generate a first repulsive force on the diamagnetic particles in the original adhesive layer 720a. The first repulsive force drives the diamagnetic particles to shift, forming a mask portion 723b in the area corresponding to the second region 102 of the original adhesive layer 720a, thereby forming a patterned mask layer 725a on the original adhesive layer 720a.

[0166] The preset distance is determined based on the height of the subsequently formed mask portion 723b, and is set based on the assumption that the mask portion 723b does not contact the mask element. Specifically, the preset distance between the mask element located above the substrate 700a and the substrate 700a in the figure is determined based on the height of the mask portion 723b. Here, the preset distance refers to the distance between the surface of the substrate 710a facing the pre-bonded layer 720a and the surface of the mask element facing the substrate 700a. For example, the height of the mask portion 723b is 3 mm, specifically, the distance between the surface of the mask portion 723b facing away from the substrate 710a and the surface of the substrate 710a facing the pre-bonded layer 720a is 3 mm. Therefore, the upper mask element a is set to a distance of at least 3 mm from the substrate 700a. Specifically, the preset distance can be set to 4 mm, 5 mm, 7 mm, etc.

[0167] In this embodiment, the magnetic particles are diamagnetic particles 726a. The magnetic field of the mask element generates a first repulsive force on the diamagnetic particles 726a located therein. Because the magnetic field strength of the first region 101 of the mask element is greater than that of the second region 102, the diamagnetic particles 726a, upon being acted upon by the first repulsive force, migrate from the region of the original rubber layer 720a corresponding to the first region 101 to the region corresponding to the second region 102, where the magnetic field is weaker. The number of diamagnetic particles 726a in the region of the original rubber layer 720a corresponding to the first region 101 decreases, forming a gap region 724b. The diamagnetic particles 726a in the region of the original rubber layer 720a corresponding to the second region 102 gather to form a mask portion 723b, thereby forming a patterned mask layer 725a on the original rubber layer 720a. The number of diamagnetic particles 726a in the gap region 724b is relatively small, the arrangement density is relatively low, and there may even be no diamagnetic particles 726a at all. The thickness of the mask portion 723b is equal to the thickness of the spacer region 724b.

[0168] In this embodiment, the magnetic induction intensity of the mask element ranges from 0.01 Tesla to 5 Tesla. For example, the magnetic induction intensity of the mask element is 0.01 Tesla, 0.5 Tesla, 1 Tesla, 2 Tesla, 2.5 Tesla, 3 Tesla, 4 Tesla, or 5 Tesla.

[0169] The magnetic induction intensity of the mask element is within the above range, which can ensure that the mask element has sufficient adsorption force on the magnetic particles, ensure the smooth formation of the mask portion 723b, and maintain the density of the diamagnetic particles 726a in the mask portion 723b within the range that can form a suitable micro-nanostructure after etching. This avoids the situation where the magnetic induction intensity of the mask element is not appropriate, resulting in insufficient density of the diamagnetic particles 726a in the mask portion 723b, which may result in subsequent etching not reaching the substrate and causing the micro-nanostructure to fail to be processed; or the situation where the diamagnetic particles 726a in the mask portion 723b are too dense, which may result in the micro-nanostructure being etched too deeply.

[0170] The viscosity of the colloid 721a of the original rubber layer 720a ranges from 0.001 Pa·s to Pa·s. For example, the viscosity of the colloid 721a of the original rubber layer 720a is 0.001 Pa·s, 5 Pa·s, 10 Pa·s, 20 Pa·s, 30 Pa·s, 40 Pa·s, 50 Pa·s, 60 Pa·s, 70 Pa·s, 80 Pa·s, Pa·s, etc.

[0171] The viscosity of the colloid 721a of the original rubber layer 720a is within the above-mentioned range, which enables the smooth formation of the mask portion 723b and maintains the density of the diamagnetic particles 726a within the range capable of being etched into a pattern, thereby avoiding the failure of the mask portion 723b to be formed, or even if it is formed, the density of the magnetic particles in the mask portion 723b is not appropriate.

[0172] In this embodiment, the density of diamagnetic particles 726a is used to distinguish between the mask portion 723b and the spacer region 724b. The thickness of the mask portion 723b and the spacer region 724b is equal and consistent with the thickness of the original rubber layer 720a before the mask portion 723b and the spacer region 724b are formed. Furthermore, during the formation of the mask portion 723b, the mask element does not come into contact with the original rubber layer 720a, thereby improving product cleanliness and yield.

[0173] Figure 12a In the process, since the magnetic field strength of the blocking area 106 (first area 101) of the mask part 100 is greater than the magnetic field strength of the hollow area 105 (second area 102), after the reverse magnetic particles 726a in the original rubber layer 720a are subjected to the first repulsive force, the reverse magnetic particles 726a in the area corresponding to the blocking area 106 on the original rubber layer 720a move toward the area corresponding to the hollow area 105 with a weaker magnetic field, so that the number of reverse magnetic particles 726a in the area corresponding to the blocking area 106 of the original rubber layer 720a is reduced, thereby forming an interval area 724b, and the number of reverse magnetic particles 726a in the area corresponding to the hollow area 105 of the original rubber layer 720a is increased, thereby forming a mask part 723b, and then the original rubber layer 720a forms a patterned mask layer 725a.

[0174] Figure 12b In the process, since the magnetic field strength of the protrusion 204 (first area 101) of the mask part 200 is greater than the magnetic field strength of the recess 203 (second area 102), after the reverse magnetic particles 726a in the original rubber layer 720a are acted upon by the first repulsive force, the reverse magnetic particles 726a in the area corresponding to the protrusion 204 on the original rubber layer 720a move toward the area corresponding to the recess 203 where the magnetic field is weaker, so that the number of reverse magnetic particles 726a in the area corresponding to the protrusion 204 of the original rubber layer 720a is reduced, thereby forming an interval area 724b, and the number of reverse magnetic particles 726a in the area corresponding to the recess 203 of the original rubber layer 720a is increased, thereby forming a mask part 723b, and then the original rubber layer 720a forms a patterned mask layer 725a.

[0175] See Figure 13a and Figure 13b , Figure 13a and Figure 13b yes Figure 2 Another structural schematic diagram of the mask and substrate relative to each other in the method for manufacturing the micro-nano layer structure is shown in FIG. Figure 13a and Figure 13b The mask pieces in Figure 3a and Figure 3b In other embodiments, the mask element may also be used. Figures 3c to 3f The mask part in.

[0176] See Figure 14a and Figure 14b , Figure 14a and Figure 14b It corresponds to Figure 13a and Figure 13b Schematic diagram of the middle mask element using a magnetic field to form a mask portion on the substrate.

[0177] In another embodiment of the present application, there are two mask elements; the magnetic particles 722a are diamagnetic particles 726a. Step S12 specifically includes: placing the mask element opposite the substrate, and the step of the magnetic force of the first region driving the magnetic particles corresponding to the first region to move includes: placing the substrate between the two mask elements such that the original glue layer faces one of the mask elements and the base faces the other mask element; the first repulsive force of the first region of one mask element and the second repulsive force of the first region of the other mask element drive the magnetic particles corresponding to the first region to move.

[0178] Although the magnetic field strength of the second regions 102 of the two masking elements is relatively small, it is possible that a second magnetic force will be generated on the diamagnetic particles 726a. The second region 102 of one masking element generates a third repulsive force on the diamagnetic particles 726a in the original rubber layer 720a, while the second region 102 of the other masking element generates a fourth repulsive force on the diamagnetic particles 726a in the original rubber layer 720a. The second magnetic force includes a third repulsive force and a fourth repulsive force. However, the third repulsive force is much smaller than the first repulsive force, and the fourth repulsive force is much smaller than the second repulsive force. The third and fourth repulsive forces can approach zero, and the first, second, third, and fourth repulsive forces are generated simultaneously. Therefore, the second magnetic force is much smaller than the first magnetic force, allowing the diamagnetic particles 726a corresponding to the first region 101 to quickly move to the corresponding second region 102, thereby accelerating preparation efficiency. The first repulsive force is between 5 and 200 times the third repulsive force, and the second repulsive force is between 5 and 200 times the fourth repulsive force.

[0179] In this embodiment, the first repulsive force is 100 times the third repulsive force, and the second repulsive force is 100 times the fourth repulsive force. In other embodiments, the first repulsive force is 5, 10, 20, 40, 70, 80, 110, 200, etc. times the third repulsive force, and the second repulsive force is 5, 10, 20, 40, 70, 80, 110, 200, etc. times the fourth repulsive force.

[0180] The first repulsive force and the second repulsive force drive the diamagnetic particles 726a to shift, causing the original rubber layer 720a to form a mask portion 723b (a portion with dense magnetic particles) and a spacer region 724b (a portion with sparse magnetic particles), so that the original rubber layer 720a forms a patterned mask layer 725a. In other words, the magnetic particles 722a at this time are diamagnetic particles 726a, the first magnetic force includes the first repulsive force and the second repulsive force, and the mask portion 723b is formed in the region of the original rubber layer 720a corresponding to the second region 102. The thickness of the mask portion 723b remains unchanged compared to the original rubber layer 720a, but the number of diamagnetic particles 726a therein increases, that is, the diamagnetic particles 726a are concentrated in the mask portion 723b.

[0181] Specifically, because the magnetic particles are diamagnetic particles 726a, the magnetic field of the mask element generates a first repulsive force and a second repulsive force on the diamagnetic particles 726a located therein. Because the magnetic field strength in the first region 101 of the mask element is greater than that in the second region 102, the diamagnetic particles 726a, when subjected to the first and second repulsive forces, migrate from the region of the original rubber layer 720a corresponding to the first region 101 toward the region corresponding to the second region 102, where the magnetic field is weaker. The number of diamagnetic particles 726a in the region of the original rubber layer 720a corresponding to the first region 101 decreases, forming a gap region 724b. The diamagnetic particles 726a in the region of the original rubber layer 720a corresponding to the second region 102 gather to form a mask portion 723b, thereby forming a patterned mask layer 725a on the original rubber layer 720a. The number of diamagnetic particles 726a in the gap region 724b is relatively small, and the arrangement density is relatively low, to the point of being completely absent.

[0182] The more specific steps of step S12 are as follows: the substrate 700a is placed between two mask pieces, so that the original adhesive layer 720a of the substrate 700a faces one of the mask pieces, and the base 710a of the substrate 700a faces the other mask piece. Move both mask pieces toward the substrate 700a. When the distance between the mask piece above the substrate 700a and the substrate 700a is a first preset distance, stop moving the upper mask piece; when the distance between the mask piece below the substrate 700a and the substrate 700a is a second preset distance, stop moving the mask piece below the substrate 700a; so that the first area 101 of the upper mask piece generates a first repulsive force on the reverse magnetic particles in the original rubber layer 720a; the first area 101 of the other mask piece below generates a second repulsive force on the reverse magnetic particles in the original rubber layer 720a; the first repulsive force and the second repulsive force drive the reverse magnetic particles to shift, so that the area corresponding to the original rubber layer 720a and the second area 102 forms a mask portion 723b, so that the original rubber layer 720a forms a patterned mask layer 725a.

[0183] The first preset distance between the mask element opposite the original adhesive layer 720a and the substrate 700a is determined by the height of the formed mask portion 723b and is set so that the mask portion 723b does not contact the mask element. Specifically, the first preset distance between the mask element located above the substrate 700 and the substrate 700a in the figure is determined by the height of the mask portion 723b. Here, the first preset distance refers to the distance between the surface of the substrate 710a facing the original adhesive layer 720a and the surface of the mask element facing the substrate 700a. For example, the height of the mask portion 723b is 3 mm, specifically, the distance between the surface of the mask portion 723b facing away from the substrate 710a and the surface of the substrate 710a facing the original adhesive layer 720a is 3 mm. Therefore, the upper mask element is moved to a distance of at least 3 mm from the substrate 700a. Specifically, the distance can be set to 4 mm, 5 mm, 7 mm, etc.

[0184] The second preset distance between the mask element opposite the base 710a and the substrate 700a is based on the absence of contact between the base 710a and the mask element. In other words, the second preset distance between the mask element located below the substrate 700a and the substrate 700a is based on the absence of contact between the two. The second preset distance here refers to the distance between the surface of the base 710a facing away from the original adhesive layer 720a and the surface of the mask element located below the substrate 700a facing the substrate 700a. For ease of control, the second preset distance is set to 2 mm, 3 mm, 4 mm, and so on.

[0185] In this embodiment, the magnetic induction intensity of the mask element ranges from 0.01 Tesla to 5 Tesla. For example, the magnetic induction intensity of the mask element is 0.01 Tesla, 0.5 Tesla, 1 Tesla, 2 Tesla, 2.5 Tesla, 3 Tesla, 4 Tesla, or 5 Tesla.

[0186] The magnetic induction intensity of the mask element is within the above range, which can ensure that the mask element has sufficient adsorption force on the magnetic particles, ensure the smooth formation of the mask portion 723b, and maintain the density of the diamagnetic particles 726a in the mask portion 723b within the range that can form a suitable micro-nanostructure after etching. This avoids the situation where the magnetic induction intensity of the mask element is not appropriate, resulting in insufficient density of the diamagnetic particles 726a in the mask portion 723b, which may result in subsequent etching not reaching the substrate and causing the micro-nanostructure to fail to be processed; or the situation where the diamagnetic particles 726a in the mask portion 723b are too dense, which may result in the micro-nanostructure being etched too deeply.

[0187] The viscosity of the colloid 721a of the original rubber layer 720a ranges from 0.001 Pa·s to Pa·s. For example, the viscosity of the colloid 721a of the original rubber layer 720a is 0.001 Pa·s, 5 Pa·s, 10 Pa·s, 20 Pa·s, 30 Pa·s, 40 Pa·s, 50 Pa·s, 60 Pa·s, 70 Pa·s, 80 Pa·s, Pa·s, etc.

[0188] The viscosity of the colloid 721a of the original rubber layer 720a is within the above-mentioned range, which enables the smooth formation of the mask portion 723b and maintains the density of the diamagnetic particles 726a within the range capable of being etched into a pattern, thereby avoiding the failure of the mask portion 723b to be formed, or even if it is formed, the density of the magnetic particles in the mask portion 723b is not appropriate.

[0189] In this embodiment, one mask part is opposite to the original adhesive layer 720a of the substrate 700a, specifically, one mask part is opposite to the surface of the original adhesive layer 720a facing away from the base 710a, and the other mask part is opposite to the base 710a of the substrate 700a, specifically, the other mask part is opposite to the surface of the base 710a facing away from the original adhesive layer 720a, and the first areas 101 of the two mask parts are opposite to each other, and the second areas 102 of the two mask parts are opposite to each other, so that the two mask parts can generate a repulsive force on the reverse magnetic particles 726a. The two mask parts work together to make the repulsive force stronger, so that the reverse magnetic particles 726a move faster from the area corresponding to the first area 101 to the area corresponding to the second area 102, so that the mask part 723b is formed quickly, thereby speeding up the production progress.

[0190] Figure 14a In the process, since the magnetic field strength of the shielding area 106 (first area 101) of the mask part 100 is greater than the magnetic field strength of the hollow area 105 (second area 102), after the reverse magnetic particles 726a in the original rubber layer 720a are subjected to the first repulsive force and the second repulsive force, the reverse magnetic particles 726a in the area corresponding to the shielding area 106 on the original rubber layer 720a move toward the area corresponding to the hollow area 105 with a weaker magnetic field, so that the number of reverse magnetic particles 726a in the area corresponding to the shielding area 106 of the original rubber layer 720a is reduced, thereby forming an interval area 724b, and the number of reverse magnetic particles 726a in the area corresponding to the hollow area 105 of the original rubber layer 720a is increased, thereby forming a mask part 723b, and then the original rubber layer 720a forms a patterned mask layer 725a.

[0191] Figure 14bIn the process, since the magnetic field strength of the protrusion 204 (first area 101) of the mask part 200 is greater than the magnetic field strength of the recess 203 (second area 102), after the reverse magnetic particles 726a in the original rubber layer 720a are subjected to the first repulsive force and the second repulsive force, the reverse magnetic particles 726a in the area corresponding to the protrusion 204 on the original rubber layer 720a move toward the area corresponding to the recess 203 where the magnetic field is weaker, so that the number of reverse magnetic particles 726a in the area corresponding to the protrusion 204 of the original rubber layer 720a is reduced, thereby forming an interval area 724b, and the number of reverse magnetic particles 726a in the area corresponding to the recess 203 of the original rubber layer 720a is increased, thereby forming a mask part 723b, and then the original rubber layer 720a forms a patterned mask layer 725a.

[0192] See Figure 15a and Figure 15b , Figure 15a and Figure 15b yes Figure 2 Schematic diagram of another structure in which the mask element and the substrate are opposite to each other in the method for manufacturing the micro-nano layer structure shown in FIG. Figure 15a and Figure 15b The mask pieces in Figure 3a and Figure 3b In other embodiments, the mask element may also be used. Figures 3c to 3f The mask part in.

[0193] See Figure 16a and Figure 16b , Figure 16a and Figure 16b It corresponds to Figure 15a and Figure 15b Schematic diagram of the middle mask element using a magnetic field to form a mask portion on the substrate.

[0194] In another embodiment of the present application, the magnetic particles 722a are paramagnetic particles 727a. Step S12 specifically includes: the first region 101 generates an adsorption force on the paramagnetic particles 727a, and the adsorption force drives the paramagnetic particles 727a to move toward the area corresponding to the first region 101, forming a mask portion 723b corresponding to the first region 101, and forming a spacer 724b corresponding to the second region 102.

[0195] The adsorption force generated by the first region 101 is called the first adsorption force. This first adsorption force drives the paramagnetic particles 727a to shift, causing the original rubber layer 720a to form a mask portion 723b and a spacer 724b, thereby forming a patterned mask layer 725a. In other words, the magnetic particles 722a are now paramagnetic particles 727a, the first magnetic force is the first adsorption force, and the mask portion 723b is formed in the region of the original rubber layer 720a corresponding to the first region 101. The mask portion 723b has the same thickness as the original rubber layer 720a, but contains more paramagnetic particles 727a. In other words, the paramagnetic particles 727a are concentrated in the mask portion 723b.

[0196] Although the magnetic field strength of the second region 102 is relatively small, it may still generate a second magnetic force acting on the paramagnetic particles 727a. The second magnetic force is a second adsorption force, but the second adsorption force is much smaller than the first adsorption force and approaches 0. This allows the paramagnetic particles 727a corresponding to the first region 101 to quickly move to the position corresponding to the first region 101, thereby accelerating the preparation efficiency. The first adsorption force is between 5 and 200 times the second adsorption force. In this embodiment, the first adsorption force is 100 times the second adsorption force. In other embodiments, the first adsorption force is 5, 10, 20, 30, 40, 70, 80, 110, 200, etc. times the second adsorption force.

[0197] Step S12 more specifically includes placing the substrate 700a below the mask element, with the pre-coated layer 720a positioned below the mask element. The mask element is then moved toward the substrate 700a. When the distance between the mask element and the substrate 700a reaches a predetermined distance, the mask element stops moving. This allows the first region 101 to exert a first attraction force on the diamagnetic particles in the pre-coated layer 720a. This first attraction force drives the diamagnetic particles to shift, forming a mask portion 723b in the pre-coated layer 720a corresponding to the first region 101, thereby forming a patterned mask layer 725a on the pre-coated layer 720a.

[0198] The preset distance is determined based on the height of the mask portion 723b formed subsequently and is set based on the fact that the mask portion 723b does not contact the mask element. The preset distance can be specifically set with reference to the above embodiment and will not be described in detail.

[0199] Because the magnetic particles are paramagnetic particles 727a, the mask's magnetic field exerts a first attraction force on the paramagnetic particles 727a located therein. Because the magnetic field strength in the first region 101 of the mask is greater than that in the second region 102, the paramagnetic particles 727a, when subjected to the first attraction force, migrate from the region of the original rubber layer 720a corresponding to the second region 102 toward the region corresponding to the first region 101, where the magnetic field is stronger. The number of paramagnetic particles 727a decreases in the region of the original rubber layer 720a corresponding to the second region 102, forming a gap region 724b. The paramagnetic particles 727a in the region of the original rubber layer 720a corresponding to the first region 101 gather to form a mask portion 723b, thereby forming a patterned mask layer 725a on the original rubber layer 720a. The number of paramagnetic particles 727a in the gap region 724b is relatively small, the arrangement density is relatively low, and there may even be no paramagnetic particles 727a at all.

[0200] In this embodiment, the magnetic induction intensity of the mask element ranges from 0.01 Tesla to 5 Tesla. For example, the magnetic induction intensity of the mask element is 0.01 Tesla, 0.5 Tesla, 1 Tesla, 2 Tesla, 2.5 Tesla, 3 Tesla, 4 Tesla, or 5 Tesla.

[0201] The magnetic induction intensity of the mask element is within the above range, ensuring that the mask element exerts sufficient attraction on the magnetic particles, ensuring the smooth formation of the mask portion 723b, and maintaining the density of the paramagnetic particles 727a in the mask portion 723b within the range that allows for the formation of a suitable micro-nanostructure after etching. This avoids situations where the magnetic induction intensity of the mask element is inappropriate, resulting in insufficient density of the diamagnetic particles 726a in the mask portion 723b, which may result in subsequent etching not reaching the substrate and thus failing to form a micro-nanostructure; or where the diamagnetic particles 726a in the mask portion 723b are too dense, which may result in the subsequent etching of the micro-nanostructure being too deep.

[0202] The viscosity of the colloid 721a of the original rubber layer 720a ranges from 0.001 Pa·s to Pa·s. For example, the viscosity of the colloid 721a of the original rubber layer 720a is 0.001 Pa·s, 5 Pa·s, 10 Pa·s, 20 Pa·s, 30 Pa·s, 40 Pa·s, 50 Pa·s, 60 Pa·s, 70 Pa·s, 80 Pa·s, Pa·s, etc.

[0203] The viscosity of the colloid 721a of the original glue layer 720a is within the above-mentioned range, which enables the mask portion 723b to be smoothly formed and the density of the paramagnetic particles 727a to be maintained within the range capable of being etched into a pattern, thereby avoiding the failure of the mask portion 723b to be formed, or even if it is formed, the density of the magnetic particles in the mask portion 723b is not appropriate.

[0204] Figure 16a In the figure, since the magnetic field strength of the shielding area 106 (first area 101) of the mask part 100 is greater than the magnetic field strength of the hollow area 105 (second area 102), after the paramagnetic particles 727a in the original rubber layer 720a are affected by the first adsorption force, the paramagnetic particles 727a in the area corresponding to the hollow area 105 on the original rubber layer 720a move toward the area corresponding to the shielding area 106 with a stronger magnetic field, so that the number of paramagnetic particles 727a in the area corresponding to the original rubber layer 720a and the hollow area 105 is reduced, thereby forming a spacer area 724b, and the number of paramagnetic particles 727a in the area corresponding to the original rubber layer 720a and the shielding area 106 is increased, thereby forming a mask part 723b, and then the original rubber layer 720a forms a patterned mask layer 725a.

[0205] Figure 16b In the figure, since the magnetic field strength of the protrusion 204 (first area 101) of the mask part 200 is greater than the magnetic field strength of the recess 203 (second area 102), after the paramagnetic particles 727a in the original rubber layer 720a are acted upon by the first adsorption force, the paramagnetic particles 727a in the area corresponding to the recess 203 on the original rubber layer 720a move toward the area corresponding to the protrusion 204 with a stronger magnetic field, so that the number of paramagnetic particles 727a in the area corresponding to the original rubber layer 720a and the recess 203 is reduced, thereby forming a spacer area 724b, and the number of paramagnetic particles 727a in the area corresponding to the original rubber layer 720a and the protrusion 204 is increased, thereby forming a mask part 723b, and then the original rubber layer 720a forms a patterned mask layer 725a.

[0206] Step S13: Using the patterned mask layer as a mask, the substrate is etched to form a patterned dielectric layer. Specifically, the patterned mask layer is etched so that the mask portion is partially etched, the rest of the substrate is completely etched, and the substrate corresponding to the rest of the substrate is etched to form a patterned dielectric layer. At this point, a portion of the mask portion still remains on the substrate 710.

[0207] See Figure 17a , Figure 17a yes Figures 6a to 6f 、 Figures 8a to 8b 、 Figures 10a to 10f Schematic diagram of the structure after the patterned mask layer formed in is etched.

[0208] In one embodiment, step S13 specifically includes: etching the substrate 710 using the patterned mask layer 725 as a mask, specifically, etching the entire patterned mask layer 725 forming the protrusion 723a. Since the patterned mask layer 725 includes the protrusion 723a (mask portion 723) and the recessed portion (spacer 724), and the thickness of the protrusion 723a is greater than the thickness of the recessed portion (spacer 724), under the same etching time, the protrusion 723a is partially etched and the spacer 724 is completely etched (during etching, the thickness of the protrusion 723a and the spacer 724 decreases simultaneously), and the etching is carried out on the substrate 710. As a result, the thickness of the portion of the substrate 710 corresponding to the protrusion 723a is greater than the thickness of the portion corresponding to the spacer 724, that is, spaced protrusions and recesses are formed on the substrate 710, and then the patterned dielectric layer 730 is formed. After the etching is completed, a portion of the convex portion 723a is etched away, and a portion of the convex portion 723c remains. The remaining convex portion 723c is thinner than the convex portion 723a. The etching is performed by dry etching or wet etching.

[0209] See Figure 17b , Figure 17b yes Figures 12a to 12b 、 Figures 14a to 14b 、 Figures 16a to 16b Schematic diagram of the structure after the patterned mask layer formed in is etched.

[0210] In another embodiment, step S13 specifically includes etching the substrate 710a using the patterned mask layer 725a as a mask. Specifically, the entire patterned mask layer 725a, which forms the mask portion 723b, is etched. Because the patterned mask layer 725 includes the mask portion 723b (mask portion 723) and the spacer 724b, and the density of magnetic particles in the mask portion 723b is greater than the density of magnetic particles in the spacer 724b, the hardness of the mask portion 723b is greater than the hardness of the spacer 724b. Under the same etching time, the harder mask portion 723b is partially etched, while the softer spacer 724b is completely etched, and the etching process extends to the substrate 710. As a result, the thickness of the portion of the substrate 710 corresponding to the mask portion 723b is greater than the thickness of the portion corresponding to the spacer 724b. This forms intermittent protrusions and recesses on the substrate 710, thereby forming the patterned dielectric layer 730. After the etching is completed, a portion of the mask portion 723b is etched away, and a portion of the mask portion 723d remains. The thickness of the remaining mask portion 723d is smaller than that of the mask portion 723b.

[0211] See also Figure 18 , Figure 18 yes Figure 17a and Figure 17b Schematic diagram of a structure in which the remaining mask portion on the patterned dielectric layer is removed.

[0212] Step S14: removing the remaining patterned mask layer on the patterned dielectric layer to form a dielectric layer 730. Specifically, oxygen plasma bombardment can be used to treat the remaining protrusion 723c or the remaining mask portion 723d. The dielectric layer 730 can be used as Figure 1 The dielectric layer 12 of the electronic device shown in FIG. The dielectric layer 730 is a micro-nano layer structure.

[0213] The manufacturing method of the micro-nano layer structure provided by the embodiment of the present application is that during the entire manufacturing process, the mask part does not contact the original rubber layer, but uses magnetic force to adsorb or repel the magnetic particles in the original rubber layer, thereby performing patterning. The mask part does not contact the original rubber layer, so the processing cleanliness is high and the yield rate is improved. Contactless processing can also be applied to pattern processing of smaller sizes, such as patterns below 20 nanometers. In addition, compared with existing manufacturing methods, the manufacturing method of the embodiment of the present application does not require steps such as pre-baking, exposure, development, and post-baking. The process is relatively simple, which simplifies the manufacturing steps and improves processing efficiency.

[0214] The above are only some of the embodiments and implementations of this application. The scope of protection of this application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. A method for manufacturing a micro-nano layer structure, comprising: Providing a mask element, wherein the mask element has magnetic permeability or magnetism, and comprises first regions and second regions that are alternately distributed, wherein the magnetic field intensity of the first regions is greater than the magnetic field intensity of the second regions; Providing a substrate, the substrate comprising a base body and a pre-gelatin layer provided on the base body, the pre-gelatin layer comprising a colloid and magnetic particles doped in the colloid; The mask member is positioned opposite to the substrate with a preset distance therebetween, and the magnetic force of the first region drives the magnetic particles corresponding to the first region to move, so that the original glue layer forms a patterned mask layer; the patterned mask layer includes mask portions and spacer regions that are alternately distributed, the density of magnetic particles in the mask portions being greater than the density of magnetic particles in the spacer regions; and one of the mask portion and the spacer region corresponds to the first region, and the other corresponds to the second region; Using the patterned mask layer as a mask, etching the substrate to form a patterned dielectric layer on the substrate; The remaining patterned mask layer on the patterned dielectric layer is removed to form a dielectric layer.

2. The method for manufacturing a micro-nano layer structure according to claim 1, characterized in that: The magnetic particles are diamagnetic particles; The step of using the magnetic force of the first region to drive the magnetic particles corresponding to the first region to move includes: the first region generates a repulsive force on the diamagnetic particles, and the repulsive force drives the diamagnetic particles to move toward the region corresponding to the second region to form the mask portion corresponding to the second region, and to form the spacer region corresponding to the first region.

3. The method for manufacturing a micro-nano layer structure according to claim 1, characterized in that: The magnetic particles are paramagnetic particles; The step of using the magnetic force of the first region to drive the magnetic particles corresponding to the first region to move includes: the first region generates an adsorption force on the paramagnetic particles, and the adsorption force drives the paramagnetic particles to move toward the region corresponding to the first region to form the mask portion corresponding to the first region, and to form the spacer region corresponding to the second region.

4. The method for manufacturing a micro-nano layer structure according to claim 1, characterized in that: The mask portion is a convex portion protruding away from the base, and the spacing area is a concave portion concave toward the base.

5. The method for manufacturing a micro-nano layer structure according to claim 4, characterized in that: The thickness of the convex portion is greater than the thickness of the concave portion.

6. The method for manufacturing a micro-nano layer structure according to claim 4, characterized in that: The magnetic induction intensity of the mask element is between 0.1 Tesla and 50 Tesla, and the viscosity of the colloid is between 1 Pascal second and 10,000 Pascal seconds.

7. The method for manufacturing a micro-nano layer structure according to claim 4, characterized in that: The step of driving the magnetic particles corresponding to the first region to move by the magnetic force of the first region comprises: The magnetic force of the first region drives the magnetic particles corresponding to the first region to move the colloid, so as to form the convex portion.

8. The method for manufacturing a micro-nano layer structure according to claim 1, characterized in that: The mask portion is a magnetic particle gathering portion, and the spacer area is a magnetic particle sparse portion; the density of magnetic particles in the magnetic particle gathering portion is greater than the density of magnetic particles in the magnetic particle sparse portion.

9. The method for manufacturing a micro-nano layer structure according to claim 8, characterized in that: The magnetic induction intensity of the mask element is between 0.01 Tesla and 5 Tesla, and the viscosity of the colloid is between 0.001 Pascal seconds and 100 Pascal seconds.

10. The method for manufacturing a micro-nano layer structure according to claim 8, characterized in that: The step of driving the magnetic particles corresponding to the first region to move by the magnetic force of the first region comprises: The magnetic force of the first region drives the magnetic particles corresponding to the first region to move, so as to form the magnetic particle aggregation portion.

11. The method for manufacturing a micro-nano layer structure according to any one of claims 1 to 10, characterized in that: While the first region generates a first magnetic force on the magnetic particles, the second region generates a second magnetic force on the magnetic particles. The first magnetic force is between 5 and 200 times greater than the second magnetic force.

12. The method for manufacturing a micro-nano layer structure according to any one of claims 1 to 10, characterized in that: The number of the mask elements is two; the magnetic particles are diamagnetic particles; The mask piece is placed opposite to the substrate, and the step of using the magnetic force of the first area to drive the magnetic particles corresponding to the first area to move includes: placing the substrate between the two mask pieces so that the original glue layer is opposite to one of the mask pieces, and the base is opposite to the other mask piece; the first repulsive force of the first area of ​​one of the mask pieces and the second repulsive force of the first area of ​​the other mask piece drive the reverse magnetic particles corresponding to the first area to move.

13. The method for manufacturing a micro-nano layer structure according to any one of claims 1 to 10, characterized in that: The thickness of the first region is greater than that of the second region, so that the magnetic field strength of the first region is greater than the magnetic field strength of the second region.

14. The method for manufacturing a micro-nano layer structure according to any one of claims 1 to 10, characterized in that: The mask element includes a stacked mask plate and an electromagnetic element, wherein the mask plate is made of a soft magnetic material; the first region and the second region are formed on the mask plate, and the thickness of the first region and the second region are equal; The electromagnetic component includes a plurality of electromagnets, the plurality of electromagnets correspond to the first region, and a pattern formed by the plurality of electromagnets has the same shape as the first region; so that after the mask plate is magnetized by the electromagnetic component, the magnetic field strength of the first region is greater than the magnetic field strength of the second region.

15. An electronic device, characterized in that: include: A base layer, a dielectric layer and a functional layer, wherein the dielectric layer and the functional layer are sequentially stacked on the surface of the base layer, and the dielectric layer is manufactured by the manufacturing method according to any one of claims 1 to 14.

16. A processing device for a micro-nano layer structure, used in the manufacturing method according to any one of claims 1 to 14, characterized in that: The processing device includes: a mask element; the mask element has magnetic permeability or magnetism, and the mask element includes a first area and a second area that are alternately distributed, and the magnetic field strength of the first area is greater than the magnetic field strength of the second area.

17. The processing device for micro-nano layer structure according to claim 16, characterized in that: The thickness of the first region is greater than that of the second region, so that the magnetic field strength of the first region is greater than the magnetic field strength of the second region.

18. The micro-nano layer structure processing device according to claim 16, characterized in that: The mask element has a first surface and a second surface arranged opposite to each other, and the mask element includes multiple blocking areas and multiple hollow areas. The hollow areas run through the first surface and the second surface. The multiple blocking areas and the multiple hollow areas are arranged alternately. The pattern formed by the multiple blocking areas is the same as the mask part, or the pattern formed by the multiple hollow areas is the same as the mask part.

19. The micro-nano layer structure processing device according to claim 17, characterized in that: The mask element includes a plurality of protrusions and a plurality of recesses, and the area between any two adjacent recesses forms the protrusion; The pattern formed by the plurality of protrusions is the same as that of the mask portion, or the pattern formed by the plurality of recesses is the same as that of the mask portion.

20. The micro-nano layer structure processing device according to claim 17, characterized in that: The mask element includes a first plate and a second plate stacked together, the second plate having a first surface and a second surface disposed opposite to each other, the second plate including a plurality of shielding areas and a plurality of hollow areas, the hollow areas passing through the first surface and the second surface, and the area between any two adjacent hollow areas forming the shielding area; The first plate and the second plate are fixedly connected, the plurality of shielding areas and the first plate form a plurality of protrusions, and the plurality of hollow areas and the first plate form a plurality of recesses; The pattern formed by the plurality of protrusions is the same as that of the mask portion, or the pattern formed by the plurality of recesses is the same as that of the mask portion.

21. The processing device for micro-nano layer structure according to any one of claims 17 to 20, characterized in that: The mask element is made of permanent magnet.

22. The processing device for micro-nano layer structure according to any one of claims 17 to 20, characterized in that: The mask plate includes a stacked mask plate and an electromagnetic component, and the mask plate is made of a soft magnetic material; the mask plate includes a first preparation area and a second preparation area, and when the electromagnetic component is energized to generate magnetism, the first preparation area and the second preparation area are magnetic, the first preparation area is the first area, and the second preparation area is the second area.

23. The processing device for micro-nano layer structure according to claim 22, characterized in that: The electromagnetic member includes a plurality of electromagnets, the plurality of electromagnets correspond to the first region, and a pattern formed by the plurality of electromagnets has the same shape as the first region.

24. The micro-nano layer structure processing device according to claim 22, characterized in that: The electromagnetic component includes a first group of electromagnets and a second group of electromagnets, the first group of electromagnets corresponds to the first area, and the pattern formed by the first group of electromagnets is the same as the shape of the first area; the second group of electromagnets corresponds to the second area, and the pattern formed by the second group of electromagnets is the same as the shape of the second area.

25. The micro-nano layer structure processing device according to claim 16, characterized in that: The mask plate includes a stacked mask plate and an electromagnetic element, the mask plate being made of a soft magnetic material; the mask plate includes a first preparatory area and a second preparatory area, the first preparatory area and the second preparatory area having the same thickness; when the electromagnetic element is energized to generate magnetism, the first preparatory area and the second preparatory area are magnetic, the first preparatory area being the first region, and the second preparatory area being the second region; The electromagnetic member includes a plurality of electromagnets, the plurality of electromagnets correspond to the first region, and a pattern formed by the plurality of electromagnets has the same shape as the first region.

Images