IGBT chip junction temperature estimation and compensation method and system

Abstract

The present invention provides an IGBT chip junction temperature estimation and compensation method and system, the IGBT chip junction temperature estimation and compensation method comprises the following steps: selecting the junction temperature reference point of the IGBT chip, the detection temperature of the on-chip sensor is the reference temperature; setting the test or simulation working condition, obtaining the junction temperature thermal ripple of the junction temperature reference point; detecting the test detection temperature of the on-chip sensor, and recording it as the sampled thermal ripple; fitting the filter equivalent model and its parameters; obtaining the actual detection temperature of the on-chip sensor, performing FFT frequency decomposition on it, to obtain the different frequency components of the sampled thermal ripple of the actual detection temperature; obtaining the attenuation values ​​of different frequency components, to obtain the frequency component compensation amplitude; performing IFFT frequency synthesis on the frequency component compensation amplitude, obtaining the real-time junction temperature compensation value, and correcting the actual detection temperature. After adopting the above technical scheme, the measurement results of high fundamental frequency under high-speed working condition and large switching frequency fluctuation caused by low switching frequency can be compensated, thereby improving the transient thermal protection capability.

Description

Technical Field

[0001] The present invention relates to the field of motor control, and in particular to an IGBT chip junction temperature estimation and compensation method and system. Background Art

[0002] With the rapid development of new energy vehicles, electric or hybrid vehicles have entered thousands of households. During the use of electric or hybrid vehicles, IGBT chips are connected to the motor windings to control the current generated by the motor windings by turning them on or off during the switching cycle.

[0003] During actual driving, when the IGBT chip receives a high-speed, high-fundamental-frequency control signal, the actual junction temperature thermal ripple represented by the sampling value of the on-chip temperature sensor connected to it is attenuated compared to the true value. The reason is that after the temperature sampling point of the IGBT chip is sampled, the on-chip sensor and related sampling circuit will filter the sampling signal. During the filtering process, it is affected by the filter time constant and accurate temperature sampling results cannot be obtained.

[0004] Therefore, a new IGBT chip junction temperature compensation method is needed to retrieve and compensate the high-frequency part removed by filtering to obtain accurate temperature sampling results. Summary of the invention

[0005] In order to overcome the above technical defects, the purpose of the present invention is to provide an IGBT chip junction temperature estimation and compensation method and system to compensate for the measurement results under high fundamental frequency under high-speed conditions, thereby improving the transient thermal protection capability.

[0006] The present invention discloses an IGBT chip junction temperature estimation and compensation method, comprising the following steps:

[0007] A point of the IGBT chip circuit is selected as a junction temperature reference point, and based on the junction temperature reference point, a detection temperature of an on-chip sensor for detecting the temperature of the IGBT chip is selected as a reference temperature;

[0008] Setting at least one test or simulation condition, and establishing a heat loss model based on the electrical performance of the IGBT chip, and obtaining the junction temperature thermal ripple at the junction temperature reference point under any test or simulation condition;

[0009] Detect the test detection temperature of the on-chip sensor under the same test or simulation conditions, and record the change of the test detection temperature in the time domain as a sampled thermal ripple;

[0010] Based on the junction temperature thermal ripple and the sampling thermal ripple, an equivalent filter model and its parameters for filtering the junction temperature thermal ripple to the sampling thermal ripple are fitted;

[0011] Under actual working conditions, the actual detected temperature of the on-chip sensor is obtained, and the actual detected temperature is subjected to FFT frequency decomposition to obtain different frequency components of the sampled thermal ripple of the actual detected temperature;

[0012] Based on the filter equivalent model and its parameters, the attenuation values ​​of different frequency components are obtained to obtain the compensation amplitude of the frequency components;

[0013] An IFFT frequency synthesis is performed based on the frequency component compensation amplitude corresponding to each frequency component to obtain a real-time junction temperature compensation value, and the actual detected temperature is corrected based on the real-time junction temperature compensation value.

[0014] Preferably, at least one test or simulation condition is set, and a heat loss model is established based on the electrical performance of the IGBT chip. The step of obtaining the junction temperature thermal ripple at the junction temperature reference point under any test or simulation condition includes:

[0015] Setting at least one test or simulation condition, and establishing a heat loss model based on the electrical performance of the IGBT chip to obtain the chip loss of the IGBT chip under any test or simulation condition;

[0016] Set up AC loss excitation in finite element simulation to obtain simulation temperature;

[0017] The steps of detecting the test detection temperature of the on-chip sensor under the same test or simulation conditions and recording the change of the test detection temperature in the time domain as a sampled thermal ripple include:

[0018] Based on the difference between the test detection temperature and the simulation temperature, the heat loss model is modified until the simulation temperature matches the test detection temperature.

[0019] Preferably, under actual working conditions, the steps of obtaining the actual detected temperature of the on-chip sensor and performing FFT frequency decomposition on the actual detected temperature to obtain different frequency components of the sampled thermal ripple of the actual detected temperature include:

[0020] Take N sampling points within a fundamental wave period Ts of the actual detected temperature to obtain the expression x[n] of the actual detected temperature in the time domain, where the fundamental wave frequency of the actual detected temperature is fs;

[0021] based on Perform FFT decomposition on the actual detected temperature to obtain the frequency component X[k] corresponding to x[n], where k = [0, 1, ..., N-1], n is the time parameter, and the frequency of the kth point in X[k] is n*fs / N.

[0022] Preferably, based on the filter equivalent model and its parameters, the step of obtaining the attenuation values ​​of different frequency components to obtain the frequency component compensation amplitude includes:

[0023] based on Calculate the attenuation values ​​of different frequency components, where |G| is the filter equivalent model, A is the gain of the filter equivalent model, fc is the cutoff frequency of the filter equivalent model, and fs is the frequency of the sampled thermal ripple of the actual detected temperature.

[0024] Preferably, the steps of performing IFFT frequency synthesis based on the frequency component compensation amplitude corresponding to each frequency component to obtain a real-time junction temperature compensation value, and correcting the actual detected temperature based on the real-time junction temperature compensation value include:

[0025] based on The frequency component compensation amplitude corresponding to each frequency component is subjected to frequency synthesis, wherein the value range of n is n=[0, 1, ..., N-1].

[0026] The present invention also discloses an IGBT chip junction temperature estimation and compensation system, comprising an IGBT chip, an on-chip sensor connected to the IGBT chip, a simulation module and a calculation module externally connected to the IGBT chip,

[0027] A point of the IGBT chip circuit is selected as a junction temperature reference point, and based on the junction temperature reference point, a detection temperature of an on-chip sensor for detecting the temperature of the IGBT chip is selected as a reference temperature;

[0028] Setting at least one test or simulation condition, and establishing a heat loss model based on the electrical performance of the IGBT chip, and obtaining the junction temperature thermal ripple at the junction temperature reference point under any test or simulation condition;

[0029] The calculation module detects the test detection temperature of the on-chip sensor under the same test or simulation conditions, and records the change of the test detection temperature in the time domain as a sampled thermal ripple;

[0030] The calculation module fits the filter equivalent model and its parameters for filtering the junction temperature thermal ripple to the sampling thermal ripple based on the junction temperature thermal ripple and the sampling thermal ripple;

[0031] The calculation module obtains the actual detection temperature of the on-chip sensor under actual working conditions, and performs FFT frequency decomposition on the actual detection temperature to obtain different frequency components of the sampled thermal ripple of the actual detection temperature;

[0032] The calculation module obtains the attenuation values ​​of different frequency components based on the filter equivalent model and its parameters to obtain the compensation amplitude of the frequency components;

[0033] The calculation module performs IFFT frequency synthesis based on the frequency component compensation amplitude corresponding to each frequency component to obtain a real-time junction temperature compensation value, and corrects the actual detection temperature based on the real-time junction temperature compensation value.

[0034] Preferably, at least one test or simulation condition is set, and a heat loss model is established based on the electrical performance of the IGBT chip to obtain the chip loss of the IGBT chip under any test or simulation condition;

[0035] Set up AC loss excitation in the simulation module to obtain simulation temperature;

[0036] The calculation module corrects the heat loss model based on the difference between the test detection temperature and the simulation temperature until the simulation temperature matches the test detection temperature.

[0037] Preferably, the calculation module takes N sampling points within a fundamental wave period Ts of the actual detected temperature to obtain an expression x[n] of the actual detected temperature in the time domain, wherein the fundamental wave frequency of the actual detected temperature is fs;

[0038] The calculation module is based on Perform FFT decomposition on the actual detected temperature to obtain the frequency component X[k] corresponding to x[n], where k = [0, 1, ..., N-1], n is the time parameter, and the frequency of the kth point in X[k] is n*fs / N.

[0039] Preferably, the calculation module is based on

[0040] Calculate the attenuation values ​​of different frequency components, where |G| is the filter equivalent model, A is the gain of the filter equivalent model, fc is the cutoff frequency of the filter equivalent model, and fs is the frequency of the sampled thermal ripple of the actual detected temperature.

[0041] Preferably, the calculation module is based on The frequency component compensation amplitude corresponding to each frequency component is subjected to frequency synthesis, wherein the value range of n is n=[0, 1, ..., N-1].

[0042] Compared with the prior art, the above technical solution has the following beneficial effects:

[0043] 1. It can solve the problem that the actual junction temperature thermal ripple represented by the sampling value of the on-chip temperature sensor is attenuated compared to the true value at high speed and high fundamental frequency;

[0044] 2. With more accurate temperature sampling results, the transient thermal protection capability can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] Figure 1 A schematic diagram of a flow chart of a method for estimating and compensating the junction temperature of an IGBT chip in accordance with a preferred embodiment of the present invention;

[0046] Figure 2 It is a schematic diagram of the junction temperature reference point of the IGBT chip in accordance with a preferred embodiment of the present invention. DETAILED DESCRIPTION

[0047] The advantages of the present invention are further described below in conjunction with the accompanying drawings and specific embodiments.

[0048] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present disclosure. Instead, they are merely examples of devices and methods consistent with some aspects of the present disclosure as detailed in the appended claims.

[0049] The terms used in this disclosure are for the purpose of describing specific embodiments only and are not intended to limit the disclosure. The singular forms of "a", "said" and "the" used in this disclosure and the appended claims are also intended to include plural forms unless the context clearly indicates otherwise. It should also be understood that the term "and / or" used herein refers to and includes any or all possible combinations of one or more associated listed items.

[0050] It should be understood that although the terms first, second, third, etc. may be used in the present disclosure to describe various information, such information should not be limited to these terms. These terms are only used to distinguish the same type of information from each other. For example, without departing from the scope of the present disclosure, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information. Depending on the context, the word "if" as used herein may be interpreted as "at the time of" or "when" or "in response to determining".

[0051] In the description of the present invention, it is necessary to understand that the terms "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0052] In the description of the present invention, unless otherwise specified and limited, it should be noted that the terms "installed", "connected" and "connected" should be understood in a broad sense. For example, it can be a mechanical connection or an electrical connection, or it can be the internal connection between two components. It can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms can be understood according to the specific circumstances.

[0053] In the following description, the suffixes such as "module", "component" or "unit" used to represent elements are only used to facilitate the description of the present invention, and have no specific meanings. Therefore, "module" and "component" can be used interchangeably.

[0054] See also Figure 1 , is a flow chart of a method for estimating and compensating the junction temperature of an IGBT chip in accordance with a preferred embodiment of the present invention. In this embodiment, the method specifically includes the following steps:

[0055] S100: selecting a point of the IGBT chip circuit as a junction temperature reference point, and selecting a detection temperature of an on-chip sensor for detecting the temperature of the IGBT chip as a reference temperature based on the junction temperature reference point;

[0056] See also Figure 2 The IGBT chip is electrically connected to an on-chip sensor in the circuit. The other end of the terminal connected to the on-chip sensor (or the highest temperature point on the on-chip sensor) is selected as the junction temperature reference point. The junction temperature is the highest temperature of the actual semiconductor chip (wafer, bare die, IGBT chip) in the electronic device. It is usually higher than the case temperature and the device surface temperature. The junction temperature can measure the time required for heat dissipation from the semiconductor wafer to the packaged device case and the thermal resistance. Taking this arbitrary point as the junction temperature reference point, that is, the temperature of this point, represents the temperature of the IGBT chip. At the same time, under the junction temperature reference point, the detection temperature displayed by the on-chip sensor of the IGBT chip is selected as the reference temperature, so as to suggest the relationship between the reference temperatures of the IGBT chip and the on-chip sensor.

[0057] S200: setting at least one test or simulation condition, and establishing a heat loss model based on the electrical performance of the IGBT chip, and obtaining a junction temperature thermal ripple at a junction temperature reference point under any test or simulation condition;

[0058] At least one test or simulation condition is set in the experimental environment, such as the room temperature and humidity of the experimental environment. Under the test or simulation condition, a heat loss model of the IGBT chip is recommended based on the electrical properties of the IGBT chip (such as the model and thermal resistance of the IGBT chip). The heat loss model represents the heat loss of the IGBT chip, and further represents the heat that should be generated at the junction temperature reference point of the IGBT chip in theory. At the same time, the junction temperature thermal ripple of the junction temperature reference point under each or any test or simulation condition will also be obtained. The junction temperature thermal ripple represents the temperature change of the junction temperature reference point in the time domain (including the high fundamental frequency of the electric vehicle under high-speed conditions).

[0059] S300: Detecting a test detection temperature of an on-chip sensor under the same test or simulation conditions, and recording a change in the test detection temperature in the time domain as a sampled thermal ripple;

[0060] On one side of the on-chip sensor, the test detection temperature under the same test or simulation conditions is detected. Similarly, the change of the test detection temperature in the time domain will also be recorded as a sampled thermal ripple. Thus, the junction temperature thermal ripple result of the junction temperature reference point of the IGBT chip and the sampled thermal ripple result of the on-chip sensor under the same test or simulation conditions will be obtained. As mentioned above, the two can be compared at high fundamental frequencies due to the part filtered out by filtering.

[0061] S400: Based on the junction temperature thermal ripple and the sampling thermal ripple, fitting a filter equivalent model and its parameters for filtering the junction temperature thermal ripple to the sampling thermal ripple;

[0062] According to the obtained junction temperature thermal ripple and sampled thermal ripple, after comparing the two, an equivalent filter model and its parameters for filtering the junction temperature thermal ripple to the sampled thermal ripple are fitted, including filter gain, filter cutoff frequency, thermal ripple frequency, etc.

[0063] S500: Under actual working conditions, obtaining the actual detected temperature of the on-chip sensor, and performing FFT frequency decomposition on the actual detected temperature to obtain different frequency components of the sampled thermal ripple of the actual detected temperature;

[0064] After parsing the filter equivalent model, under actual working conditions, such as during vehicle driving, the actual detection temperature of the on-chip sensor at any time is obtained, and the actual detection temperature in the time domain is represented by FFT frequency decomposition. FFT is a fast algorithm for discrete Fourier transform, which decomposes it into frequency components such as 1 times the thermal ripple frequency, 2 times the thermal ripple frequency, 3 times the thermal ripple frequency, 4 times the thermal ripple frequency, and 5 times the thermal ripple frequency.

[0065] S600: based on the filter equivalent model and its parameters, obtaining attenuation values ​​of different frequency components to obtain frequency component compensation amplitudes;

[0066] Under the filter equivalent model, the attenuation values ​​of each frequency component removed during filtering are inferred in combination with each frequency component, so as to obtain the frequency component compensation value. In other words, each frequency component is the result of filtering under the filter equivalent model. According to the filtering parameters of the filter equivalent model, the original values ​​of each frequency component before filtering can be reversely calculated, so that the attenuation value after filtering can be obtained after comparison, and the attenuation value is used as the frequency component compensation amplitude.

[0067] S700: Perform IFFT frequency synthesis based on the frequency component compensation amplitude corresponding to each frequency component to obtain a real-time junction temperature compensation value, and correct the actual detection temperature based on the real-time junction temperature compensation value.

[0068] Based on the frequency component compensation amplitude corresponding to each frequency component, IFFT frequency synthesis is performed and converted back to the real-time junction temperature compensation value. After correcting the actual detection temperature, the accurate detection temperature can be obtained.

[0069] In a preferred embodiment, at least one test or simulation condition is set, and a heat loss model is established based on the electrical performance of the IGBT chip. The step S200 of obtaining the junction temperature thermal ripple at the junction temperature reference point under any test or simulation condition includes:

[0070] S210: Setting at least one test or simulation condition, and establishing a heat loss model based on the electrical performance of the IGBT chip to obtain the chip loss of the IGBT chip under any test or simulation condition;

[0071] S220: setting AC loss excitation in the finite element simulation, so as to obtain a simulation temperature of the simulation under the chip heat loss model, where the simulation temperature is a theoretical value.

[0072] At the same time, the step S300 of detecting the test temperature of the on-chip sensor under the same test or simulation conditions and recording the change of the test temperature in the time domain as a sampled thermal ripple includes:

[0073] S310: Based on the difference between the test detection temperature and the simulation temperature, the heat loss model is corrected until the simulation temperature matches the test detection temperature. Through continuous iteration, the test detection temperature and the simulation temperature are continuously approached. It can be understood that with the help of the test value at low frequency, the simulation temperature as a theoretical value should match the test detection temperature to remove stray factors for the establishment of the subsequent filter equivalent model.

[0074] In another optional embodiment, under actual working conditions, the step S500 of obtaining the actual detected temperature of the on-chip sensor and performing FFT frequency decomposition on the actual detected temperature to obtain different frequency components of the sampled thermal ripple of the actual detected temperature includes:

[0075] S510: Take N sampling points within a fundamental wave period Ts of the actual detected temperature to obtain an expression x[n] of the actual detected temperature in the time domain, where the fundamental wave frequency of the actual detected temperature is fs;

[0076] S520: Based on Perform FFT decomposition on the actual detected temperature to obtain the frequency component X[k] corresponding to x[n], where k = [0, 1, ..., N-1], n is the time parameter, and the frequency of the kth point in X[k] is n*fs / N.

[0077] Further, based on the filter equivalent model and its parameters, the attenuation values ​​of different frequency components are obtained to obtain the frequency component compensation amplitude, step S600 includes:

[0078] S610:

[0079] based on Calculate the attenuation values ​​of different frequency components, where |G| is the filter equivalent model, A is the gain of the filter equivalent model, fc is the cutoff frequency of the filter equivalent model, and fs is the frequency of the sampled thermal ripple of the actual detected temperature.

[0080] Most preferably, performing IFFT frequency synthesis based on the frequency component compensation amplitude corresponding to each frequency component to obtain a real-time junction temperature compensation value, and correcting the actual detected temperature based on the real-time junction temperature compensation value S700 step includes:

[0081] S710: Based on The frequency component compensation amplitude corresponding to each frequency component is frequency synthesized, where the value range of n is n=[0, 1, ..., N-1]. The x'(n) time series after frequency domain compensation reflects the real sampling junction temperature thermal ripple.

[0082] The present invention also discloses an IGBT chip junction temperature estimation and compensation system, comprising an IGBT chip, an on-chip sensor connected to the IGBT chip, a simulation module and a calculation module externally connected to the IGBT chip,

[0083] A point of the IGBT chip circuit is selected as a junction temperature reference point, and based on the junction temperature reference point, a detection temperature of an on-chip sensor for detecting the temperature of the IGBT chip is selected as a reference temperature;

[0084] Setting at least one test or simulation condition, and establishing a heat loss model based on the electrical performance of the IGBT chip, and obtaining the junction temperature thermal ripple at the junction temperature reference point under any test or simulation condition;

[0085] The calculation module detects the test detection temperature of the on-chip sensor under the same test or simulation conditions, and records the change of the test detection temperature in the time domain as a sampled thermal ripple;

[0086] The calculation module fits the filter equivalent model and its parameters for filtering the junction temperature thermal ripple to the sampling thermal ripple based on the junction temperature thermal ripple and the sampling thermal ripple;

[0087] The calculation module obtains the actual detection temperature of the on-chip sensor under actual working conditions, and performs FFT frequency decomposition on the actual detection temperature to obtain different frequency components of the sampled thermal ripple of the actual detection temperature;

[0088] The calculation module obtains the attenuation values ​​of different frequency components based on the filter equivalent model and its parameters to obtain the compensation amplitude of the frequency components;

[0089] The calculation module performs IFFT frequency synthesis based on the frequency component compensation amplitude corresponding to each frequency component to obtain a real-time junction temperature compensation value, and corrects the actual detection temperature based on the real-time junction temperature compensation value.

[0090] Preferably, at least one test or simulation condition is set, and a heat loss model is established based on the electrical performance of the IGBT chip to obtain the chip loss of the IGBT chip under any test or simulation condition;

[0091] Set up AC loss excitation in the simulation module to obtain simulation temperature;

[0092] The calculation module corrects the heat loss model based on the difference between the test detection temperature and the simulation temperature until the simulation temperature matches the test detection temperature.

[0093] Preferably, the calculation module takes N sampling points within a fundamental wave period Ts of the actual detected temperature to obtain an expression x[n] of the actual detected temperature in the time domain, wherein the fundamental wave frequency of the actual detected temperature is fs;

[0094] The calculation module is based on Perform FFT decomposition on the actual detected temperature to obtain the frequency component X[k] corresponding to x[n], where k = [0, 1, ..., N-1], n is the time parameter, and the frequency of the kth point in X[k] is n*fs / N.

[0095] Preferably, the calculation module is based on

[0096] Calculate the attenuation values ​​of different frequency components, where |G| is the filter equivalent model, A is the gain of the filter equivalent model, fc is the cutoff frequency of the filter equivalent model, and fs is the frequency of the sampled thermal ripple of the actual detected temperature.

[0097] Preferably, the calculation module is based on The frequency component compensation amplitude corresponding to each frequency component is subjected to frequency synthesis, wherein the value range of n is n=[0, 1, ..., N-1].

[0098] It should be noted that the embodiments of the present invention have better practicability and do not impose any form of limitation on the present invention. Any technician familiar with the field may use the technical content disclosed above to change or modify it into an equivalent effective embodiment. However, any modification or equivalent changes and modifications made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention are still within the scope of the technical solution of the present invention.

Claims

1. A method for estimating and compensating junction temperature of an IGBT chip, characterized in that: The following steps are involved: Selecting a point of the IGBT chip circuit as a junction temperature reference point, and using the junction temperature reference point as a standard, selecting a detection temperature of an on-chip sensor for detecting the temperature of the IGBT chip as a reference temperature; Setting at least one test or simulation condition, and establishing a heat loss model based on the electrical performance of the IGBT chip, and obtaining the junction temperature thermal ripple at the junction temperature reference point under any test or simulation condition; Detect the test detection temperature of the on-chip sensor under the same test or simulation conditions, and record the change of the test detection temperature in the time domain as a sampled thermal ripple; Based on the junction temperature thermal ripple and the sampled thermal ripple, fitting a filter equivalent model and its parameters for filtering the junction temperature thermal ripple to the sampled thermal ripple; Under actual working conditions, the actual detected temperature of the on-chip sensor is obtained, and the actual detected temperature is subjected to FFT frequency decomposition to obtain different frequency components of the sampled thermal ripple of the actual detected temperature; Based on the filter equivalent model and its parameters, obtaining attenuation values ​​of different frequency components to obtain frequency component compensation amplitudes; Perform IFFT frequency synthesis based on the frequency component compensation amplitude corresponding to each frequency component to obtain a real-time junction temperature compensation value, and correct the actual detection temperature based on the real-time junction temperature compensation value, wherein Based on the filter equivalent model and its parameters, the step of obtaining attenuation values ​​of different frequency components to obtain frequency component compensation amplitudes includes: based on Calculate the attenuation values ​​of different frequency components, where |G| is the filter equivalent model, A is the gain of the filter equivalent model, fc is the cutoff frequency of the filter equivalent model, and fs is the frequency of the sampled thermal ripple of the actual detected temperature.

2. The IGBT chip junction temperature estimation and compensation method according to claim 1, characterized in that: The steps of setting at least one test or simulation condition, establishing a heat loss model based on the electrical performance of the IGBT chip, and obtaining the junction temperature thermal ripple at the junction temperature reference point under any test or simulation condition include: Setting at least one test or simulation condition, and establishing a heat loss model based on the electrical performance of the IGBT chip to obtain the chip loss of the IGBT chip under any test or simulation condition; Set up AC loss excitation in finite element simulation to obtain simulation temperature; The steps of detecting the test detection temperature of the on-chip sensor under the same test or simulation conditions and recording the change of the test detection temperature in the time domain as a sampled thermal ripple include: Based on the difference between the test detection temperature and the simulation temperature, the heat loss model is modified until the simulation temperature matches the test detection temperature.

3. The IGBT chip junction temperature estimation and compensation method according to claim 1, characterized in that: Under actual working conditions, the steps of obtaining the actual detected temperature of the on-chip sensor and performing FFT frequency decomposition on the actual detected temperature to obtain different frequency components of the sampled thermal ripple of the actual detected temperature include: Take N sampling points within a fundamental wave period Ts of the actual detected temperature to obtain an expression x[n] of the actual detected temperature in the time domain, where the fundamental wave frequency of the actual detected temperature is fs; based on Perform FFT decomposition on the actual detected temperature to obtain the frequency component X[k] corresponding to x[n], where k = [0, 1, ..., N-1], n is the time parameter, and the frequency of the kth point in X[k] is n*fs / N.

4. The IGBT chip junction temperature estimation and compensation method according to claim 1, characterized in that: The steps of performing IFFT frequency synthesis based on the frequency component compensation amplitude corresponding to each frequency component to obtain a real-time junction temperature compensation value, and correcting the actual detected temperature based on the real-time junction temperature compensation value include: based on The frequency component compensation amplitude corresponding to each frequency component is subjected to frequency synthesis, wherein the value range of n is n=[0, 1, ..., N-1].

5. An IGBT chip junction temperature estimation and compensation system, characterized in that: It includes an IGBT chip, an on-chip sensor connected to the IGBT chip, a simulation module and a calculation module externally connected to the IGBT chip, Selecting a point of the IGBT chip circuit as a junction temperature reference point, and using the junction temperature reference point as a standard, selecting a detection temperature of an on-chip sensor for detecting the temperature of the IGBT chip as a reference temperature; Setting at least one test or simulation condition, and establishing a heat loss model based on the electrical performance of the IGBT chip, and obtaining the junction temperature thermal ripple at the junction temperature reference point under any test or simulation condition; The calculation module detects the test detection temperature of the on-chip sensor under the same test or simulation conditions, and records the change of the test detection temperature in the time domain as a sampled thermal ripple; The calculation module fits a filter equivalent model and its parameters for filtering the junction temperature thermal ripple to the sampled thermal ripple based on the junction temperature thermal ripple and the sampled thermal ripple; The calculation module obtains the actual detected temperature of the on-chip sensor under actual working conditions, and performs FFT frequency decomposition on the actual detected temperature to obtain different frequency components of the sampled thermal ripple of the actual detected temperature; The calculation module obtains the attenuation values ​​of different frequency components based on the filter equivalent model and its parameters to obtain the frequency component compensation amplitude; The calculation module performs IFFT frequency synthesis based on the frequency component compensation amplitude corresponding to each frequency component to obtain a real-time junction temperature compensation value, and corrects the actual detection temperature based on the real-time junction temperature compensation value, wherein The calculation module is based on Calculate the attenuation values ​​of different frequency components, where |G| is the filter equivalent model, A is the gain of the filter equivalent model, fc is the cutoff frequency of the filter equivalent model, and fs is the frequency of the sampled thermal ripple of the actual detected temperature.

6. The IGBT chip junction temperature estimation and compensation system according to claim 5, characterized in that: Setting at least one test or simulation condition, and establishing a heat loss model based on the electrical performance of the IGBT chip to obtain the chip loss of the IGBT chip under any test or simulation condition; Set up AC loss excitation in the simulation module to obtain simulation temperature; The calculation module corrects the heat loss model based on the difference between the test detection temperature and the simulation temperature until the simulation temperature matches the test detection temperature.

7. The IGBT chip junction temperature estimation and compensation system according to claim 5, characterized in that: The calculation module takes N sampling points within a fundamental wave period Ts of the actual detected temperature to obtain an expression x[n] of the actual detected temperature in the time domain, wherein the fundamental wave frequency of the actual detected temperature is fs; The calculation module is based on Perform FFT decomposition on the actual detected temperature to obtain the frequency component X[k] corresponding to x[n], where k = [0, 1, ..., N-1], n is the time parameter, and the frequency of the kth point in X[k] is n*fs / N.

8. The IGBT chip junction temperature estimation and compensation system according to claim 7, characterized in that: The calculation module is based on The frequency component compensation amplitude corresponding to each frequency component is subjected to frequency synthesis, wherein the value range of n is n=[0, 1, ..., N-1].

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