Display panel and method for manufacturing the same

Abstract

The present application discloses a display panel and a manufacturing method thereof. The display panel provided by the present application includes: a substrate, the substrate includes a display area and a GOA area adjacent to the display area; an array layer, the array layer is disposed on the substrate; a first encapsulation layer, the first encapsulation layer is disposed on a side of the array layer away from the substrate, and the first encapsulation layer is located on the GOA area; a second encapsulation layer, the second encapsulation layer is disposed on a side of the array layer away from the substrate, and the second encapsulation layer is located on the display area; wherein, the hydrogen content per unit area of the first encapsulation layer is less than the hydrogen content per unit area of the second encapsulation layer. The present application can effectively solve the problem of hydrogen diffusion existing inside the display panel, protect the display panel, and extend the service life of the display panel.

Description

Technical Field

[0001] This application relates to the field of display devices, and particularly to a display panel and a manufacturing method thereof. Background Art

[0002] An organic light-emitting diode (OLED) is a self-luminous device that emits light under current driving. The OLED display panel has advantages such as a wide color gamut, a wide viewing angle, low power consumption, high resolution, and being suitable for flexible panels, and can be widely used in devices such as smart home appliances and wearable devices.

[0003] However, the display device in the OLED display panel is vulnerable to external influences. For example, components such as oxygen and water in the air will erode the display device, thereby shortening the service life of the display panel. Therefore, it is usually necessary to isolate the display device from components such as oxygen and water in the air through a thin film encapsulation process to extend the service life of the display panel.

[0004] However, there is a phenomenon of hydrogen diffusion in some encapsulation film layers during the high-temperature state or the aging process. Due to the shielding of the anode layer and the cathode layer in the display area of the display panel, the influence of hydrogen diffusion on the thin film transistor in the array layer located in the display area is relatively small. Outside the display area, due to the absence of the shielding of the anode layer and the cathode layer, hydrogen diffusion will cause a negative bias in the thin film transistor in the array layer. Severe hydrogen diffusion will cause the gate driver on array (GOA) circuit in the array layer of the array substrate to fail. Summary of the Invention

[0005] This application provides a display panel and a manufacturing method thereof, which can effectively solve the problem of hydrogen diffusion inside the display panel, protect the display panel, and extend the service life of the display panel.

[0006] In a first aspect, this application provides a display panel, including:

[0007] A substrate, the substrate includes a display area and a GOA area adjacent to the display area;

[0008] An array layer, the array layer is disposed on the substrate;

[0009] A first encapsulation layer, the first encapsulation layer is disposed on the side of the array layer away from the substrate, and the first encapsulation layer is located on the GOA area;

[0010] A second encapsulation layer, the second encapsulation layer is disposed on the side of the array layer away from the substrate, and the second encapsulation layer is located on the display area;

[0011] Among them, the hydrogen content per unit area of the first encapsulation layer is less than that of the second encapsulation layer per unit area.

[0012] In the display panel provided by the present application, the first encapsulation layer is an inorganic material with a hydrogen content of zero.

[0013] In the display panel provided by the present application, the material of the first encapsulation layer is silicon oxide compound, and the material of the second encapsulation layer is silicon nitride compound or silicon oxynitride compound.

[0014] In the display panel provided by the present application, the first encapsulation layer is an inorganic material with a non-zero hydrogen content.

[0015] In the display panel provided by the present application, it further includes: a hydrogen barrier layer;

[0016] The hydrogen barrier layer is disposed between the array layer and the first encapsulation layer, and the hydrogen barrier layer is disposed corresponding to the GOA region.

[0017] In the display panel provided by the present application, the hydrogen barrier layer is at least one of a non-conductive material with a hydrogen content of zero and a metal material.

[0018] In the display panel provided by the present application, the array layer at least includes a first thin film transistor and a second thin film transistor. The first thin film transistor is disposed on the GOA region, and the second thin film transistor is disposed on the display region; the first thin film transistor corresponds to the first encapsulation layer, and the second thin film transistor corresponds to the second encapsulation layer.

[0019] In the display panel provided by the present application, it further includes: a light-emitting device layer;

[0020] The light-emitting device layer is located on the display region, and the light-emitting device layer is disposed on the side of the array layer away from the substrate.

[0021] In the display panel provided by the present application, it further includes: a protective layer;

[0022] The protective layer is disposed on the side of the first encapsulation layer and the second encapsulation layer away from the substrate, and the material of the protective layer is a polymer.

[0023] Second, the present application provides a method for manufacturing a display panel, including the following steps:

[0024] Provide a substrate, the substrate includes a display region and a GOA region adjacent to the display region;

[0025] Prepare an array layer on the substrate;

[0026] On the side of the array layer away from the substrate, sequentially prepare a first encapsulation layer located in the GOA region and a second encapsulation layer located in the display region;

[0027] Among them, the hydrogen content per unit area of the material used for the first encapsulation layer is less than that of the material used for the second encapsulation layer.

[0028] In the method for manufacturing a display panel provided in this application, before the step of sequentially manufacturing the first encapsulation layer located in the GOA region and the second encapsulation layer located in the display region, the method further includes:

[0029] On the side of the array layer away from the substrate, a hydrogen barrier layer located in the GOA region is manufactured.

[0030] In the method for manufacturing a display panel provided in this application, after the step of sequentially manufacturing the first encapsulation layer located in the GOA region and the second encapsulation layer located in the display region, the method further includes:

[0031] On the side of the first encapsulation layer and the second encapsulation layer away from the substrate, a protective layer is manufactured.

[0032] For the display panel and its manufacturing method provided in this application, by separately providing the first encapsulation layer located in the GOA region and the second encapsulation layer located in the display region on the side of the array layer away from the substrate, the inside of the display panel is isolated from the outside world, preventing the inside of the display panel from being eroded by water, oxygen, etc., and extending the service life of the display panel; moreover, since the hydrogen content per unit area of the first encapsulation layer is less than that of the second encapsulation layer, compared with the second encapsulation layer in the display region, the hydrogen diffusion phenomenon caused by the high-temperature state or aging problem of the first encapsulation layer in the GOA region can be effectively reduced. Description of the Drawings

[0033] Figure 1 It is the first structural schematic diagram of the display panel provided by the embodiment of this application;

[0034] Figure 2 It is the second structural schematic diagram of the display panel provided by the embodiment of this application;

[0035] Figure 3 It is the third structural schematic diagram of the display panel provided by the embodiment of this application;

[0036] Figure 4 It is the fourth structural schematic diagram of the display panel provided by the embodiment of this application.

[0037] Figure 5 It is the first process schematic diagram of the method for manufacturing the display panel provided by the embodiment of this application;

[0038] Figure 6 It is the second process schematic diagram of the method for manufacturing the display panel provided by the embodiment of this application;

[0039] Figure 7 It is the third process schematic diagram of the method for manufacturing the display panel provided by the embodiment of this application. Detailed implementation manners

[0040] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts shall fall within the protection scope of the present application.

[0041] In addition, the description of the following invention embodiments refers to the attached drawings for illustrating specific invention embodiments that the present invention can be implemented with. The directional terms mentioned in the present invention, such as "upper", "lower", "front", "rear", "side", etc., only refer to the directions of the attached drawings. Therefore, the directional terms used are for better and clearer illustration and understanding of the present invention, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be construed as a limitation to the present invention. In addition, the terms "first", "second", "third", etc. are only used for descriptive purposes and cannot be construed as indicating or implying relative importance. When some components are described as "on" another component, the component can be directly placed on the other component; there can also be an intermediate component, the component is placed on the intermediate component, and the intermediate component is placed on another component.

[0042] In some embodiments, please refer to Figure 1 , Figure 1 which is the first structural schematic diagram of the display panel provided by the embodiment of the present application. As Figure 1 shown, the display panel 100 includes a substrate 10, an array layer 20, a first encapsulation layer 30, and a second encapsulation layer 40.

[0043] Among them, the substrate 10 includes a display area 101 and a GOA area 102 adjacent to the display area 101. Among them, the array layer 20 is disposed on the substrate 10. Among them, the first encapsulation layer 30 is disposed on the side of the array layer 20 away from the substrate 10, and the first encapsulation layer 30 is located on the GOA area 102. Among them, the second encapsulation layer 40 is disposed on the side of the array layer 20 away from the substrate 10, and the second encapsulation layer is located on the display area 101. And, the hydrogen content per unit area of the first encapsulation layer 30 is less than the hydrogen content per unit area of the second encapsulation layer 40.

[0044] In this embodiment, a first encapsulation layer 30 located in the GOA region 102 and a second encapsulation layer 40 located in the display region 101 are respectively disposed on one side of the array layer 20 away from the substrate 10, isolating the inside of the display panel 100 from the external environment, and preventing substances such as water and oxygen from the outside from eroding the inside of the display panel 100, thereby extending the service life of the display panel 100. On the other hand, since the hydrogen content per unit area of the first encapsulation layer 30 is less than that of the second encapsulation layer 40, the hydrogen diffusion phenomenon caused by the high-temperature state or aging problem of the first encapsulation layer 30 in the GOA region 101 can be effectively reduced compared with the hydrogen diffusion phenomenon of the second encapsulation layer 40 in the display region 101 due to the high-temperature state or aging problem.

[0045] In some embodiments, please continue to refer to Figure 1 . The first encapsulation layer 30 is an inorganic material with a hydrogen content of zero. In some embodiments, the first encapsulation layer 30 may be selected from at least one of silicon oxides, boron oxides, and metal oxides. The second encapsulation layer 40 may be selected from silicon nitrides or silicon oxynitrides. In some specific embodiments, the first encapsulation layer 30 may be selected from at least one of metal oxides such as aluminum oxide, titanium oxide, and chromium oxide.

[0046] In some embodiments, please continue to refer to Figure 1 , the first encapsulation layer 30 is an inorganic material with a non-zero hydrogen content.

[0047] In some specific embodiments, the first encapsulation layer 30 is silicon oxynitride, and the second encapsulation layer 40 is also silicon oxynitride, wherein the hydrogen content per unit area of the first encapsulation layer 30 is less than that of the second encapsulation layer 40. It should be noted that in this embodiment, when forming silicon oxynitride, the hydrogen content per unit area of the first encapsulation layer 30 and the second encapsulation layer 40 are controlled by controlling the amount of hydrogen-containing gas in the process of preparing nitrogen hydroxide compound.

[0048] In some embodiments, please refer to Figure 2 , Figure 2 This is the second schematic structural diagram of the display panel provided by the embodiment of the present application. The difference between the display panel provided by this embodiment and the display panel provided by the foregoing embodiment is that: a hydrogen barrier layer is further included in this embodiment. As Figure 2 shown, the display panel 100 includes a substrate 10, an array layer 20, a first encapsulation layer 30, a second encapsulation layer 40, and a hydrogen barrier layer 50.

[0049] Among them, the substrate 10 includes a display area 101 and a GOA area 102 adjacent to the display area. The array layer 20 is disposed on the substrate 10. The first encapsulation layer 30 is disposed on the side of the array layer 20 away from the substrate 10, and the first encapsulation layer 30 is located on the GOA area 102. The second encapsulation layer 40 is disposed on the side of the array layer 20 away from the substrate 10, and the second encapsulation layer is located on the display area 101. The hydrogen barrier layer 50 is disposed between the array layer 20 and the first encapsulation layer 30, and the hydrogen barrier layer 50 is disposed corresponding to the GOA area 102.

[0050] It should be noted that the orthographic projection of the hydrogen barrier layer 50 on the GOA area 102 may coincide with the orthographic projection of the first encapsulation layer 30 on the GOA area 102, or the orthographic projection of the hydrogen barrier layer 50 on the GOA area 102 may cover the orthographic projection of the first encapsulation layer 30 on the GOA area 102. It can be understood that when the first encapsulation layer 30 contains hydrogen, the hydrogen barrier layer 50 blocks the hydrogen in the first encapsulation layer 30 from diffusing to the array layer 20 in the GOA area 102.

[0051] In some embodiments, please continue to refer to FIG. 2. The hydrogen barrier layer 50 is at least one of a non-conductive material with a hydrogen content of zero and a metal material. In some specific embodiments, the hydrogen barrier layer 50 may be selected from at least one of non-conductive materials such as alumina, titanium oxide, and chromium oxide. In some specific embodiments, the hydrogen barrier layer may be selected from at least one of metal materials such as silver, magnesium, copper, and aluminum.

[0052] In some embodiments, please refer to Figure 3 , which is the third structural schematic diagram of the display panel provided by the embodiment of the present application. The difference between the display panel provided by this embodiment and the display panel provided by the foregoing embodiment is that: this embodiment further includes a protective layer. As Figure 3 shown, the display panel 100 includes a substrate 10, an array layer 20, a first encapsulation layer 30, a second encapsulation layer 40, and a protective layer 60.

[0053] Among them, the substrate 10 includes a display area 101 and a GOA area 102 adjacent to the display area. The array layer 20 is disposed on the substrate 10. The first encapsulation layer 30 is disposed on the side of the array layer 20 away from the substrate 10, and the first encapsulation layer 30 is located on the GOA area 102. The second encapsulation layer 40 is disposed on the side of the array layer 20 away from the substrate 10, and the second encapsulation layer is located on the display area 101. The protective layer 60 is disposed on the side of the first encapsulation layer 30 and the second encapsulation layer 40 away from the substrate 10, and the material of the protective layer 60 is a polymer.

[0054] It can be understood that in Figure 3In the third schematic structural diagram of the display panel shown, a hydrogen barrier layer may further be included. The hydrogen barrier layer is disposed between the array layer 20 and the first encapsulation layer 30, and the hydrogen barrier layer is disposed corresponding to the GOA region 102.

[0055] In this embodiment, a protective layer 60 made of a polymer material is disposed on the sides of the first encapsulation layer 30 and the second encapsulation layer 40 away from the substrate 10, so as to cover the defects on the surfaces of the first encapsulation layer 30 and the second encapsulation layer 40, eliminate the film height difference generated by separately disposing the first encapsulation layer 30 and the second encapsulation layer 40, provide a flat surface for subsequently disposing other functional film layers on the sides of the first encapsulation layer 30 and the second encapsulation layer 40 away from the substrate 10, and reduce the surface stress of the first encapsulation layer 30 and the second encapsulation layer 40. Moreover, the polymer has good barrier effects on both water and oxygen, and can isolate the inside of the display panel 100 from the outside world to prevent the inside of the display panel 100 from being eroded.

[0056] In some specific embodiments, the high molecular polymer may be selected from at least one of polymethyl methacrylate and epoxy resin.

[0057] In some specific embodiments, please refer to Figure 4 , Figure 4 which is the fourth schematic structural diagram of the display panel provided by the embodiment of the present application. As Figure 4 shown, the display panel 100 includes a substrate 10, an array layer 20, a first encapsulation layer 30, and a second encapsulation layer 40.

[0058] The substrate 10 includes a display region 101 and a GOA region 102 adjacent to the display region. The substrate 10 may be a rigid substrate or a flexible substrate, and the substrate 10 may be a glass substrate, a polyimide substrate, or a polyethylene terephthalate substrate. The substrate 10 may be a transparent substrate, a semi-transparent substrate, or an opaque substrate.

[0059] The array layer 20 is disposed on the substrate 10. Specifically, the array layer 20 has a layered structure including an active layer 201, a gate insulating layer 202, a gate metal layer 203, and a source-drain metal 204 sequentially disposed in a direction away from the substrate 10. As Figure 4 shown, the array layer 20 further includes a first interlayer insulating layer 205, a second interlayer insulating layer 206, and a passivation layer 207. The first interlayer insulating layer 205 and the second interlayer insulating layer 206 play an insulating role in the array layer 20. Among them, the array layer 20 includes at least a first thin film transistor and a second thin film transistor. The first thin film transistor is disposed on the GOA region 102, that is Figure 4The active layer 201, gate insulating layer 202, gate metal layer 203, and source-drain metal 204 provided in the GOA region 102 as shown form a first thin-film transistor. The second thin-film transistor is provided on the display region 101, that is Figure 4 The active layer 201, gate insulating layer 202, gate metal layer 203, and source-drain metal 204 provided in the display region 101 as shown form a second thin-film transistor.

[0060] The first encapsulation layer 30 is provided on the side of the array layer 20 away from the substrate 10, and the first encapsulation layer 30 is located on the GOA region 102. The second encapsulation layer 40 is provided on the side of the array layer away from the substrate 10, and the second encapsulation layer 40 is located on the display region 101. The hydrogen content per unit area of the first encapsulation layer 30 is less than that of the second encapsulation layer 40. The material of the first encapsulation layer 30 is silicon oxide compound, and the material of the second encapsulation layer 40 is nitrogen oxide compound. The first thin-film transistor corresponds to the first encapsulation layer 30, and the second thin-film transistor corresponds to the second encapsulation layer 40.

[0061] It can be understood that the correspondence between the first thin-film transistor and the first encapsulation layer 30 means that the orthographic projection of the first encapsulation layer 30 on the GOA region 102 can coincide with the orthographic projection of the first thin-film transistor on the GOA region 102, or the orthographic projection of the first encapsulation layer 30 on the GOA region 102 can cover the orthographic projection of the first thin-film transistor on the GOA region 102. Similarly, the correspondence between the second thin-film transistor and the second encapsulation layer 40 means that the orthographic projection of the second encapsulation layer 40 on the display region 101 can cover the orthographic projection of the second thin-film transistor on the display region, or the orthographic projection of the second encapsulation layer 40 on the display region 101 coincides with the orthographic projection of the second thin-film transistor on the display region 101.

[0062] It should be understood that Figure 4 Only showing the first thin-film transistor in the GOA region 102 and the second thin-film transistor in the display region 101 should not constitute any limitation to this application. Figure 4 The purpose of showing the first thin-film transistor is that by the orthographic projection of the first encapsulation layer 30 covering the orthographic projection of the first thin-film transistor, it shows that the first encapsulation layer 30 can block the erosion of the array layer 20 in the GOA region 102 by external water and oxygen, and can also effectively reduce the negative bias of the first thin-film transistor in the GOA region 102 caused by the hydrogen diffusion of the first encapsulation layer 30, further avoiding the failure of the GOA circuit. Figure 4 The purpose of showing the second thin-film transistor is that by the orthographic projection of the second encapsulation layer 40 covering the orthographic projection of the second thin-film transistor, it shows that the second encapsulation layer 40 can block the erosion of the array layer 20 in the display region 101 by external water and oxygen.

[0063] In some specific embodiments, please continue to refer to Figure 4。The display panel 100 further includes a light-emitting device layer 70. The light-emitting device layer 70 is located on the display area 101, and the light-emitting device layer 70 is disposed on the side of the array layer 20 away from the substrate and on the side of the second encapsulation layer 40 close to the array layer 20. That is, the light-emitting device layer 70 is disposed between the array layer 20 and the second encapsulation layer 40.

[0064] The light-emitting device layer 70 has a layered structure such as an anode layer 701, a light-emitting layer 702, and a cathode layer 703 arranged in a direction away from the substrate 10. The anode layer 701 is disposed on the side of the array layer 20 away from the substrate 10. The light-emitting layer 702 is disposed on the side of the anode layer 701 away from the substrate 10. The cathode layer 703 is disposed on the side of the light-emitting layer 702 away from the substrate 10. The cathode layer 703 can use a transparent electrode material, so as not to block the light emitted by the light-emitting layer 702. Specifically, the cathode layer 703 can use a conductive indium zinc oxide material. In addition, the light-emitting device layer 70 further includes a planarization layer 704 and a third interlayer insulating layer 705 and other layered structures. The planarization layer 704 can include an organic layer such as benzocyclobutene or acrylic, and the planarization layer 704 has a planarization effect.

[0065] It should be understood that the positive projections of the anode layer 701 and the cathode layer 703 of the light-emitting device layer 70 can cover the positive projection of the second thin-film transistor in the display area 101, and the positive projection of the second encapsulation layer 40 can cover the positive projections of the anode layer 701 and the cathode layer 703 in the light-emitting device layer 70. Based on the fact that the second thin-film transistor in the display area 101 is blocked by the anode layer 701 and the cathode layer 703, compared with the GOA area 102 being affected by the hydrogen diffusion phenomenon, the display area 101 is less affected by the hydrogen diffusion phenomenon of the second encapsulation layer 40. Therefore, the first encapsulation layer 30 can use a silicon oxide material, and the oxygen-silicon material does not introduce hydrogen-containing gas during the preparation process, so the hydrogen content of the first encapsulation layer 30 is zero. Since the display area 101 requires an inorganic material with better sealing performance compared to the GOA area 102, and the silicon nitride compound material has good sealing performance, the second encapsulation layer 40 can use the silicon nitride compound material. However, the silicon nitride compound material generally introduces a large amount of hydrogen-containing gas during the preparation process, so the silicon nitride compound material is not suitable for the first encapsulation layer 30.

[0066] Please continue to refer to Figure 4 , in some embodiments, the display panel 100 further includes a hydrogen barrier layer 50. The hydrogen barrier layer 50 is disposed between the array layer 20 and the first encapsulation layer 30, and the hydrogen barrier layer 50 is disposed corresponding to the GOA area 102. It can be understood that when the first encapsulation layer 30 contains hydrogen, the hydrogen barrier layer 50 blocks the hydrogen in the first encapsulation layer 30 from diffusing to the array layer 20 in the GOA area 102. The hydrogen barrier layer 50 is at least one of a non-conductive material with zero hydrogen content and a metal material.

[0067] Please continue to refer toFigure 4 In some embodiments, the display panel 100 further includes a protective layer 60. The protective layer 60 is disposed on the side of the first encapsulation layer 30 and the second encapsulation layer 40 away from the substrate 10, and the material of the protective layer 60 is a polymer. The protective layer 60 may be selected from at least one of polymethyl methacrylate and epoxy resin. By providing the protective layer 60 made of a polymer material on the side of the first encapsulation layer 30 and the second encapsulation layer 40 away from the substrate 10, the defects on the surfaces of the first encapsulation layer 30 and the second encapsulation layer 40 are covered, the film layer height difference caused by separately providing the first encapsulation layer 30 and the second encapsulation layer 40 is eliminated, a flat surface is provided for subsequently disposing other functional film layers on the side of the first encapsulation layer 30 and the second encapsulation layer 40 away from the substrate 10, and the surface stress of the first encapsulation layer 30 and the second encapsulation layer 40 is reduced. Moreover, the polymer has a good barrier effect on water and oxygen, can isolate the inside of the display panel 100 from the outside world, and prevent the inside of the display panel 100 from being eroded.

[0068] Another aspect of the present application further provides a method for manufacturing a display panel. In some embodiments, please refer to Figure 5 , Figure 5 which is the first process schematic diagram of the method for manufacturing the display panel provided by the embodiments of the present application. As Figure 5 shown, the method includes the following steps:

[0069] Step S101: Provide a substrate, where the substrate includes a display area and a GOA area adjacent to the display area.

[0070] The substrate may be made of materials such as glass, polyimide, polyethylene terephthalate, etc. The substrate may be transparent, translucent or opaque. The substrate in this embodiment may also be a flexible substrate formed of a polymer with a relatively thin thickness.

[0071] Step S102: Prepare an array layer on the substrate. In this embodiment, the array layer includes at least two thin film transistors and a pixel circuit formed by the thin film transistors. The array layer is used to form a light-emitting structure in the light-emitting device layer.

[0072] Among them, the steps of preparing the array layer may include: depositing an active layer on the substrate. On the side of the active layer away from the substrate, a gate insulating layer is deposited. On the side of the gate insulating layer away from the substrate, a gate metal layer is deposited, and then the gate metal layer is patterned. On the side of the gate metal layer away from the substrate, an interlayer insulating layer is deposited to cover the active layer, the gate insulating layer, and the gate metal layer. The interlayer insulating layer is perforated to define a source metal region and a drain metal region. A source metal and a drain metal are respectively deposited in the source metal region and the drain metal region. On the side of the source metal layer and the drain metal layer away from the substrate, a passivation layer may also be deposited. The passivation layer can be prepared from inorganic materials such as silicon oxide or silicon nitride.

[0073] In addition, before step S102 and after step S101, a buffer layer may be prepared on the substrate. The buffer layer may be composed of multiple layers of inorganic or organic materials stacked to prevent water, oxygen, or other impurities from diffusing through the substrate, and the buffer layer can provide a flat surface on the substrate.

[0074] Step S103: On the side of the array layer away from the substrate, a first encapsulation layer located in the GOA region and a second encapsulation layer located in the display region are sequentially prepared; among them, the hydrogen content per unit area of the material used for the first encapsulation layer is less than the hydrogen content per unit area of the material used for the second encapsulation layer.

[0075] Among them, the steps of sequentially preparing the first encapsulation layer located in the GOA region and the second encapsulation layer located in the display region may be specifically: on the side of the array layer away from the substrate, the first encapsulation layer is deposited by processes such as atomic deposition to cover the GOA region and at least part of the display region. Through an etching process, the first encapsulation layer located in the display region is removed. Subsequently, on the side of the array layer corresponding to the display region away from the substrate, the second encapsulation layer is deposited by processes such as atomic deposition. Among them, the steps of sequentially preparing the first encapsulation layer located in the GOA region and the second encapsulation layer located in the display region may also be specifically: on the side of the array layer away from the substrate, through a masking process, the first encapsulation layer located in the GOA region and the second encapsulation layer located in the display region are sequentially prepared.

[0076] It should be noted that since the light-emitting layer located in the display area is very sensitive to water and oxygen from the outside world, the second encapsulation layer needs to be made of a material with better sealing performance than the first encapsulation layer. Therefore, the material of the second encapsulation layer can be at least one of silicon nitride compounds or silicon oxynitride compounds. However, when preparing silicon nitride compounds or silicon oxynitride compounds, hydrogen-containing gases need to be introduced, and thus the encapsulation layer formed by silicon nitride compounds or silicon oxynitride compounds has a certain hydrogen content. Therefore, the encapsulation layer formed by silicon nitride compounds or silicon oxynitride compounds will have hydrogen diffusion phenomenon due to being in a high-temperature state or aging problems. The hydrogen diffusion phenomenon will cause a negative bias in the thin-film transistors in the array layer, and a serious hydrogen diffusion phenomenon will cause the GOA circuit to fail. Therefore, silicon nitride compounds or silicon oxynitride compounds are not suitable for the material of the first encapsulation layer. The material of the first encapsulation can be selected from at least one of inorganic materials with zero hydrogen content or inorganic materials with a small hydrogen content, such as at least one of inorganic materials such as silicon oxide compounds or metal oxide compounds. In addition, since hydrogen-containing gases need to be introduced when preparing silicon nitride compounds or silicon oxynitride compounds, if the second encapsulation layer located in the display area is prepared first on the side of the array layer far from the substrate, and then the first encapsulation layer located in the GOA area is prepared, the array layer in the GOA area may be affected by the hydrogen-containing gas due to the lack of shielding of the cathode layer and the anode layer. Therefore, the first encapsulation layer can be prepared first, and then the second encapsulation layer can be prepared.

[0077] In some embodiments, before step S103 and after step S102, a light-emitting device layer is further prepared on the side of the array layer corresponding to the display area far from the substrate. Among them, the step of preparing the light-emitting device layer can be specifically: on the side of the array layer corresponding to the display area far from the substrate, an anode layer is prepared and patterned. A light-emitting layer is prepared on the side of the anode layer far from the substrate, and the light-emitting layer can be formed by an inkjet printing process. A cathode layer is prepared on the side of the light-emitting layer far from the substrate, and the cathode layer can be formed on the light-emitting layer by an evaporation process. In some embodiments, the cathode layer is a full-surface structure that covers the light-emitting layer and the array layer in the display area.

[0078] In this embodiment, by separately preparing the first encapsulation layer located in the GOA area and the second encapsulation layer located in the display area 101, the inside of the display panel is isolated from the external environment, avoiding the erosion of substances such as water and oxygen from the outside world to the inside of the display panel, thereby extending the service life of the display panel. On the other hand, since the hydrogen content per unit area of the first encapsulation layer is less than that of the second encapsulation layer, therefore, compared with the hydrogen diffusion phenomenon generated by the second encapsulation layer in the display area due to high-temperature state or aging problems, the hydrogen diffusion phenomenon generated by the first encapsulation layer in the GOA area due to high-temperature state or aging problems can be effectively reduced.

[0079] In some embodiments, please refer to Figure 6 , Figure 6This is the second process schematic diagram of the method for manufacturing a display panel provided by an embodiment of the present application. As Figure 6 shown, the method includes the following steps:

[0080] Step S201: Provide a substrate, where the substrate includes a display area and a GOA area adjacent to the display area;

[0081] Step S202: Fabricate an array layer on the substrate;

[0082] Step S203: On the side of the array layer away from the substrate, fabricate a hydrogen barrier layer located in the GOA area;

[0083] Step S204: On the side of the array layer away from the substrate, sequentially fabricate a first encapsulation layer located in the GOA area and a second encapsulation layer located in the display area; wherein, the hydrogen content per unit area of the material used for the first encapsulation layer is less than that of the material used for the second encapsulation layer.

[0084] The difference between the method for manufacturing the display substrate provided in this embodiment and the previous embodiment is that: before the step of sequentially fabricating the first encapsulation layer located in the GOA area and the second encapsulation layer located in the display area, a hydrogen barrier layer is fabricated on the side of the array layer corresponding to the GOA area away from the substrate. The hydrogen barrier layer can be deposited by processes such as atomic deposition, so that the hydrogen barrier layer covers the GOA area, and the orthographic projection of the hydrogen barrier layer in the GOA area can cover the orthographic projection of the first encapsulation layer in the GOA area. The material of the hydrogen barrier layer can be selected from at least one of non-conductive materials or metal materials with zero hydrogen content, such as at least one of aluminum oxide, titanium oxide, chromium oxide, silver metal, magnesium metal, copper metal, and aluminum metal.

[0085] In some embodiments, please refer to Figure 7 , Figure 7 This is the third process schematic diagram of the method for manufacturing a display panel provided by an embodiment of the present application. As Figure 7 shown, the method includes the following steps:

[0086] Step S301: Provide a substrate, where the substrate includes a display area and a GOA area adjacent to the display area;

[0087] Step S302: Fabricate an array layer on the substrate;

[0088] Step S303: On the side of the array layer away from the substrate, fabricate a hydrogen barrier layer located in the GOA area; it should be noted that, in some embodiments, step S303 can also be omitted;

[0089] Step S304: On the side of the array layer away from the substrate, a first encapsulation layer located in the GOA region and a second encapsulation layer located in the display region are sequentially prepared; wherein, the hydrogen content per unit area of the material used for the first encapsulation layer is less than that of the material used for the second encapsulation layer.

[0090] Step S305: A protective layer is prepared on the side of the first encapsulation layer and the second encapsulation layer away from the substrate.

[0091] The difference between the method for manufacturing the display substrate provided in this embodiment and the foregoing embodiments lies in that: after the steps of sequentially preparing the first encapsulation layer located in the GOA region and the second encapsulation layer located in the display region, a protective layer is prepared on the side of the first encapsulation layer and the second encapsulation layer away from the substrate. The protective layer is prepared from a polymer material and can be prepared by an inkjet printing process. The polymer material can be selected from at least one of epoxy resin and polymethyl methacrylate. It should be noted that the protective layer prepared from the polymer material can cover the surface defects on the side of the first encapsulation layer and the second encapsulation layer away from the substrate, eliminate the film height difference caused by separately setting the first encapsulation layer and the second encapsulation layer, provide a flat surface for subsequently setting other functional films on the side of the first encapsulation layer and the second encapsulation layer away from the substrate, and reduce the surface stress of the first encapsulation layer and the second encapsulation layer. Moreover, the polymer material has a good barrier effect on both water and oxygen, can isolate the inside of the display panel from the outside world, and prevent the inside of the display panel from being eroded.

[0092] The above are only the embodiments of the present application, and do not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present application, or directly or indirectly applied in other related technical fields, shall be equally included in the patent protection scope of the present application.

Claims

1. A display panel, characterized in that, Comprising: A substrate, the substrate including a display area and a GOA area adjacent to the display area; An array layer, the array layer being disposed on the substrate; A first encapsulation layer, the first encapsulation layer being disposed on a side of the array layer away from the substrate, and the first encapsulation layer being located on the GOA area; A second encapsulation layer, the second encapsulation layer being disposed on a side of the array layer away from the substrate, and the second encapsulation layer being located on the display area; A hydrogen barrier layer, the hydrogen barrier layer being disposed between the array layer and the first encapsulation layer, and the hydrogen barrier layer only being located on the GOA area; Wherein, on a side of the array layer away from the substrate, the first encapsulation layer located on the GOA area and the second encapsulation layer located on the display area are sequentially prepared; The hydrogen content per unit area of the first encapsulation layer is less than the hydrogen content per unit area of the second encapsulation layer.

2. The display panel according to claim 1, characterized in that, The first encapsulation layer is an inorganic material with a hydrogen content of zero.

3. The display panel according to claim 2, characterized in that, The material of the first encapsulation layer is silicon oxide compound; the material of the second encapsulation layer is silicon nitride compound or silicon oxynitride compound.

4. The display panel according to claim 1, characterized in that, The first encapsulation layer is an inorganic material with a non-zero hydrogen content.

5. The display panel according to claim 4, characterized in that, The hydrogen barrier layer is at least one of a non-conductive material with a hydrogen content of zero and a metal material.

6. The display panel according to claim 1, characterized in that, The array layer at least includes a first thin film transistor and a second thin film transistor, the first thin film transistor being disposed on the GOA area, the second thin film transistor being disposed on the display area; the first thin film transistor corresponds to the first encapsulation layer, and the second thin film transistor corresponds to the second encapsulation layer.

7. The display panel according to any one of claims 1-6, characterized in that, The display panel further includes: a light emitting device layer; The light emitting device layer is located on the display area, and the light emitting device layer is disposed on a side of the array layer away from the substrate.

8. A method for manufacturing a display panel, characterized in that, Including the following steps: Providing a substrate, the substrate including a display area and a GOA area adjacent to the display area; Preparing an array layer on the substrate; On a side of the array layer away from the substrate, sequentially preparing a first encapsulation layer located on the GOA area and a second encapsulation layer located on the display area; wherein, The hydrogen content per unit area of the material used for the first encapsulation layer is less than the hydrogen content per unit area of the material used for the second encapsulation layer.

9. The method for manufacturing a display panel according to claim 8, characterized in that, Before the step of sequentially preparing the first encapsulation layer located on the GOA area and the second encapsulation layer located on the display area, further including: Preparing a hydrogen barrier layer located on the GOA area on a side of the array layer away from the substrate.

Images