Multi charged particle beam drawing method and multi charged particle beam drawing apparatus

Abstract

A mark position is measured with high precision by a multi-beam. A multi-charged particle beam drawing method forms a plurality of beams (30a to 30e) of a charged particle beam arranged at a prescribed interval, switches on a beam of a part of an area of the plurality of beams (30a to 30e) to make a beam-on area, thereby shifting an irradiation position of the charged particle beam while irradiating a beam of the beam-on area to a mark (M) provided at a prescribed position and having a width wider than the prescribed interval, detecting a reflected charged particle signal from the mark (M), calculating a position of the mark (M), and adjusting the irradiation position of the plurality of beams based on the calculated position of the mark (M) to draw a pattern.

Description

TECHNICAL FIELD

[0001] The present application relates to a multi-charged particle beam drawing method and a multi-charged particle beam drawing apparatus. BACKGROUND

[0002] With high integration of LSIs, circuit line widths required for semiconductor devices are becoming finer year by year. In order to form desired circuit patterns on semiconductor devices, a method of using a reduction projection exposure apparatus to reduce and transfer a high-precision original pattern formed on a quartz onto a wafer is adopted. In the production of a high-precision original pattern, a so-called electron beam lithography technique of forming a pattern by exposing a resist with an electron beam drawing apparatus is used.

[0003] A drawing apparatus using a multi-beam can irradiate more beams at a time compared with the case of drawing with one electron beam, and therefore, productivity can be greatly improved. In a multi-beam drawing apparatus using a blanking aperture array (blanking plate) as one form of a multi-beam drawing apparatus, for example, electron beams emitted from one electron gun are made to pass through a shaped aperture array having a plurality of openings to form a multi-beam (a plurality of electron beams). The multi-beam passes through a blanker (a pair of electrodes) corresponding to the blanking aperture array respectively. The blanker has a pair of electrodes for individually deflecting the beams, and an opening for the passage of the beams is formed between the pair of electrodes. By fixing one electrode of the blanker to a ground potential and switching the other electrode to a ground potential and a potential other than the ground potential, blanking deflection of the passing electron beams is performed. The electron beams deflected by the blanker are shielded and cut off, and the non-deflected electron beams are irradiated as on-beam to a substrate on a stage.

[0004] In multi-beam drawing, the drawing operation is temporarily interrupted at a certain drawing unit, a mark on the stage is irradiated (scanned) with the multi-beam while being shifted, a reflected electron signal from the mark is detected, and a beam shift amount (an amount of shift of the entire beam) is found by calculating the position of the mark from the detection result, and a shift correction is performed.

[0005] As one of methods of improving the resolution of lithography, there is a phase shift method. A phase shift mask requires two layers of patterns, a light shielding pattern layer and a half tone pattern layer, and therefore, the alignment (alignment) accuracy when these patterns are overlaid becomes important. For example, a pattern of a cross mark for alignment is produced at the time of formation of a pattern of a first layer. Then, the cross mark is scanned with a multi-beam to detect a reflected electron signal, and the position of the cross mark is calculated from the detection result, and the drawing position of a pattern of a second layer is adjusted.

[0006] Thus, in multi-beam drawing, a mark provided on a stage or a substrate is scanned with a multi-beam, and the position of the mark is measured. In the case of measuring the position of the mark with a multi-beam, the current density of one beam is low, and therefore, a plurality of beams of a specific area are turned on, they are concentrated like one beam, and the mark is scanned. At this time, as shown in FIG. 1, a wider range than the size of the beam region BG1 added to the width W of the mark M needs to be scanned. Therefore, when the deflector deflects the multi-beam to scan, deflection strain occurs, or the beam approaches the deflector and drift occurs, and it is difficult to accurately measure the position of the mark. Figure 13

[0007] Patent Document 1: Japanese Patent Application Publication No. 2017-220615

[0008] Patent Document 2: Japanese Patent Application Publication No. 2017-107959

[0009] Patent Document 3: Japanese Patent Application Publication No. 2017-151155 SUMMARY

[0010] An object of the present application is to provide a multi-charged particle beam drawing method and a multi-charged particle beam drawing apparatus capable of accurately measuring the position of a mark with a multi-beam.

[0011] A multi-charged particle beam drawing method of one embodiment of the present application is a method of forming a multi-beam in which charged particle beams are arranged at a prescribed interval, turning on a beam region in which a part of the multi-beam is turned on by sequentially switching, thereby shifting an irradiation position of the charged particle beam, irradiating a mark provided at a prescribed position and having a width wider than the prescribed interval with a beam of the turned-on beam region, detecting a reflected charged particle signal from the mark, calculating the position of the mark, and adjusting the irradiation position of the multi-beam based on the calculated position of the mark to draw a pattern.

[0012] A multi-charged particle beam drawing apparatus of one embodiment of the present application includes a aperture array substrate that forms a multi-beam in which charged particle beams are arranged at a prescribed interval; a stage on which a drawing object to be irradiated with the multi-beam is placed; a control portion that shifts an irradiation position of the charged particle beam by sequentially switching a turned-on beam region in which a beam of a part of the multi-beam is turned on; a mark that is provided on the stage or the drawing object and has a width wider than the prescribed interval; and a mark position calculation portion that calculates the position of the mark based on a reflected electron signal detected when a beam of the turned-on beam region is irradiated with the mark.

[0013] EFFECTS OF THE INVENTION

[0014] According to the present application, the position of a mark can be accurately measured with a multi-beam.​ Attached Figure Description

[0015] Figure 1 This is a schematic diagram of a multi-charged particle beam mapping apparatus according to an embodiment of the present invention.

[0016] Figure 2 This is a top view of a substrate with a shaped aperture array.

[0017] Figure 3 This is a flowchart illustrating the method of describing this embodiment.

[0018] Figures 4a to 4d This is a diagram illustrating the conversion scan.

[0019] Figures 5a to 5c This is a diagram illustrating the conversion scan.

[0020] Figure 6 It is a graph representing the detection results of the reflected electronic signal.

[0021] Figure 7 This is a flowchart illustrating a method for depicting another embodiment.

[0022] Figure 8a , Figure 8b This is a diagram illustrating the scanning method. Figure 8c It is a graph representing the detection results of the reflected electronic signal.

[0023] Figure 9a , Figure 9b This is a diagram illustrating the scanning method. Figure 9c It is a graph representing the detection results of the reflected electronic signal.

[0024] Figure 10a , Figure 10b This is a diagram illustrating the scanning method. Figure 10c It is a graph representing the detection results of the reflected electronic signal.

[0025] Figure 11 It is a graph representing the combination of detection results of reflected electronic signals.

[0026] Figure 12a , Figure 12b This diagram illustrates the center of gravity of the guided beam region.

[0027] Figure 13 This is a diagram illustrating deflection scanning. Detailed Implementation

[0028] An embodiment of the present application will be described below based on the drawings. In the embodiment, a configuration using an electron beam will be described as an example of a charged particle beam. However, the charged particle beam is not limited to the electron beam, and can be an ion beam or the like.

[0029] Figure 1 is a conceptual view showing a configuration of a drawing device of the embodiment. In Figure 1 , the drawing device includes a drawing section 1 and a control section 100. The drawing device is an example of a multi-charged particle beam drawing device. The drawing section 1 includes a lens barrel 2 and a drawing chamber 20. Inside the lens barrel 2, an electron gun 4, an illumination lens 6, a shaped aperture array substrate 8, a blanking plate 10, a reduction lens 12, a limiting aperture member 14, an objective lens 15, a deflector 17, and the like are arranged.

[0030] An XY stage 22 and a detector 26 are arranged in the drawing chamber 20. A substrate 70 to be drawn is arranged on the XY stage 22. The height of the substrate 70 can be adjusted by a Z stage (not shown). The substrate 70 is, for example, a reticle, a semiconductor substrate (silicon wafer).

[0031] A mirror 24 for position measurement of the XY stage 22 is arranged on the XY stage 22. Further, a mark substrate 28 in which a mark M (see FIG. 4) for beam calibration is formed is arranged on the XY stage 22. The mark M is made of metal, and is formed in a cross shape, for example, so as to be easily detected by electron beam scanning. The detector 26 detects a reflected electron signal from the mark M when the mark M is scanned with the electron beam.

[0032] On the XY stage 22, a mark 40 for beam position detection is arranged at a position different from a position at which the substrate 70 is placed. The mark 40 is, for example, a transmissive mark, and a current detector 50 is arranged below the mark 40. The height of the mark 40 can be adjusted by an adjustment mechanism (not shown).

[0033] The mark 40 is a mark that allows only one electron beam to pass therethrough. The mark 40 is formed in a circular planar shape, for example, and a through hole for allowing one beam to pass therethrough is formed along a central axis. An electron beam that has passed through the through hole of the mark 40 is incident on the current detector 50, and a beam current is detected. As the current detector 50, a SSD (solid-state detector), for example, can be used. The detection result of the current detector 50 is notified to a control computer 110.

[0034] The control section 100 has a control computer 110, a deflection control circuit 130, a digital analog conversion (DAC) amplifier 131, a detection amplifier 134, a stage position detector 135, and a storage device 140. The storage device 140 is a magnetic disk device or the like, and inputs drawing data from the outside and stores it.

[0035] The DAC amplifier 131 is connected to the deflection control circuit 130. The DAC amplifier 131 is connected to the deflector 17.

[0036] The control computer 110 has a drawing data processing section 111, a drawing control section 112, a mark position calculation section 113, a correction section 114, a beam position calculation section 115, and a center of gravity position calculation section 116. The functions of the sections of the control computer 110 can be realized by hardware or by software. In the case of being constituted by software, a program realizing the functions of at least a part of the control computer 110 can be housed in a storage medium, and a computer including a CPU or the like can be read in and executed. The storage medium is not limited to a detachable storage medium such as a magnetic disk or an optical disk, and can be a fixed-type storage medium such as a hard disk device or a memory.

[0037] Figure 2 is a conceptual view showing the constitution of the shaped aperture array substrate 8. As shown in Figure 2 , in the shaped aperture array substrate 8, m columns in the vertical (y direction) x n columns in the horizontal (x direction) (m, n ≧ 2) of the opening portions 80 are formed in a matrix shape at a prescribed arrangement pitch.

[0038] The electron beams 30 emitted from the electron gun 4 are illuminated to the shaped aperture array substrate 8 substantially perpendicularly through the illumination lens 6. The electron beams 30 illuminate the regions including the opening portions 80 of the shaped aperture array substrate 8. A part of the electron beams 30 respectively pass through the plurality of opening portions 80, and thus, as shown in Figure 1 , a plurality of beams 30a to 30e of a prescribed pitch and size are formed. Note that the plurality of beams can also be formed using a photocathode.

[0039] In the blanking plate 10, at positions corresponding to the respective opening portions 80 of the shaped aperture array substrate 8 shown in Figure 2 , through holes (opening portions) through which the respective beams of the plurality of beams pass are formed. In the vicinity of each through hole, an electrode for deflection of the beam (blanking deflector) is disposed which deflects the beam.

[0040] The plurality of beams 30a to 30e passing through the respective through holes are deflected independently by the voltage applied from the blanking deflector. The deflection is blanking control. In this way, the plurality of blanking deflectors perform deflection of the respective beams of the plurality of beams after passing through the plurality of opening portions 80 of the shaped aperture array substrate 8.

[0041] The multi-beams 30a to 30e after passing through the blanker 10 are reduced in beam size and arrangement pitch by the reduction lens 12, and are advanced toward the opening portion formed in the center portion of the limiting aperture member 14. The electron beams deflected by the blankers of the blanker 10 are displaced in track from the opening portion in the center of the limiting aperture member 14, and are shielded by the limiting aperture member 14. On the other hand, the electron beams not deflected by the blankers of the blanker 10 pass through the opening portion in the center of the limiting aperture member 14.

[0042] The multi-beams 30a to 30e after passing through the limiting aperture member 14 are focused by the objective lens 15 to form a pattern image on the substrate 70 at a desired reduction ratio. As the objective lens 15, an electrostatic lens can be used. The deflector 17 collectively deflects the multi-beams after passing through the limiting aperture member 14 in the same direction, and irradiates the deflected beams onto the drawing position (irradiation position) on the substrate 70.

[0043] While the XY stage 22 is continuously moved, the deflector 17 is controlled to track the movement of the XY stage 22 so that the drawing position (irradiation position) of the beams follows the movement of the XY stage 22. The position of the XY stage 22 is detected from the stage position detector 135 by irradiating laser light toward the mirror 24 on the XY stage 22, and the reflected light is used for the detection.

[0044] The multi-beams irradiated at one time are desirably arranged at a pitch obtained by multiplying the arrangement pitch of the plurality of opening portions 80 of the shaped aperture array substrate 8 by the desired reduction ratio described above. When the desired pattern is drawn by the drawing device in a raster scan mode in which the emission beams are sequentially irradiated in succession, the necessary beams are controlled to be turned on by blanking control in accordance with the pattern.

[0045] The drawing data processing section 111 of the control computer 110 reads out the drawing data from the storage device 140, performs multi-stage data conversion, and generates emission data. In the emission data, the presence or absence of irradiation and the irradiation time for each irradiation region of the substrate 70, which is divided into a plurality of irradiation regions in a lattice shape by the beam size, for example, are defined.

[0046] The drawing control section 112 outputs a control signal to the deflection control circuit 130 on the basis of the emission data and the stage position information. The deflection control circuit 130 controls the applied voltage of each blanker of the blanker 10 on the basis of the control signal. Further, the deflection control circuit 130 calculates deflection amount data so as to irradiate the beams onto the desired position on the substrate 70, and outputs the deflection amount data to the DAC amplifier 131. The DAC amplifier 131 amplifies the digital signal on the basis of the conversion into an analog signal, and applies the deflection voltage to the deflector 17. The deflector 17 deflects the multi-beams in accordance with the applied deflection voltage.

[0047] In the drawing apparatus, beam drift occurs due to the influence of attachment of contaminants and the like, and a shift occurs in the beam irradiation position. Therefore, it is necessary to temporarily interrupt the pattern drawing process at a prescribed timing to measure the mark position with a multi-beam scan mark M, and perform adjustment of the irradiation position (drift correction). According to the flowchart shown in FIG. 8, the drawing method including drift correction is explained. Figure 3

[0048] A multi-beam is irradiated to the substrate 70, and a pattern is drawn (step S1). When the timing for performing drift measurement is reached after a prescribed time (step S2_YES), the pattern drawing is temporarily interrupted, and a multi-beam with only a part of the beams turned on (turned-on beam) scans the mark M (step S3). At this time, the scanning direction is preferably a direction perpendicular to the edge E (refer to FIG. 2) of the mark M, but a perpendicular component is sufficient. Figure 4a

[0049] In the present embodiment, the mark M is not scanned by deflecting the multi-beam with the deflector 17 as shown in FIG. 6, but the mark M is scanned by switching (switching over) the region in which the beams are turned on. Hereinafter, the case in which the mark M is scanned by deflecting the multi-beam (turned-on beam) with the deflector 17 will be referred to as "deflection scanning", and the case in which the mark M is scanned by switching the region in which the beams are turned on will be referred to as "switching scanning". Figure 13

[0050] An example of switching scanning is shown in FIGS. 9A to 9D. First, as shown in FIG. 9A, the beams in a region BG1 of a part of the multi-beam are turned on, and the beams in the other regions are turned off. In this example, 9 beams (= 3 x 3) in the region BG1 at the upper left in the figure are turned on out of 81 beams (= 9 x 9) in the multi-beam. The reflected electron signal from the mark M is detected with the detector 26. The width of the mark M is smaller than the size of the entire multi-beam, and larger than the pitch of the multi-beam on the substrate. The turned-on beam region includes a plurality of individual beams arranged in a direction perpendicular to the mark edge E of the width direction WD of the mark M and a direction (mark edge extension direction) parallel to the mark edge E of the width direction WD, respectively. Figures 4a to 4d Figures 5a to 5c Next, as shown in FIG. 9B, the region in which the beams are turned on is shifted rightward by one column, and the beams in a region BG2 are turned on. The reflected electron signal from the mark M is detected with the detector 26. Figure 4a Subsequently, as shown in FIG. 9C, the region in which the beams are turned on is shifted rightward by one column, and the beams in a region BG3 are turned on. The reflected electron signal from the mark M is detected with the detector 26.

[0051] Figure 4b Finally, as shown in FIG. 9D, the region in which the beams are turned on is shifted rightward by one column, and the beams in a region BG4 are turned on. The reflected electron signal from the mark M is detected with the detector 26.

[0052] Figure 4c Figure 4d Figure 5a Figure 5b Figure 5c ​​​​​​​​​​As shown, the region in which the beam is made to pass is shifted by 1 column to the right each time, and the beams of the regions BG3, BG4, BG5, BG6, BG7 are made to pass in turn. Each time the region in which the beam is made to pass is switched, the reflected electron signal from the mark M is detected by the detector 26.

[0053] By switching the region in which the beam is made to pass from the region BG1 to the region BG7 in turn, the same mark scanning as the deflection scanning of the mark M by the beam of the region BG1 can be performed. Figure 13

[0054] The detection result of the reflected electron signal by the detector 26 is as shown. Figure 6 The mark position calculating section 113 calculates the mark position from the detection result of the reflected electron signal by the detector 26, and measures the shift of the mark position based on the calculated mark position and the stage position information detected by the stage position detector 135 (step S4).

[0055] The correction section 114 calculates a correction amount (deflection correction amount) for correcting (correcting) the shift of the mark position by the deflector 17 (step S5). The calculated correction amount is stored in a storage device not shown. In the pattern drawing (step S1) later, by deflecting the irradiation position (deflection position) of the multi-beam to a position shifted by the correction amount, irradiation position adjustment such as drift correction can be performed.

[0056] Thus, according to the present embodiment, since the mark M is scanned by switching the region in which the beam is made to pass, the generation of the deflection strain can be prevented, and the mark position can be accurately measured. As a result, the position shift based on the beam drift can be corrected with high accuracy.

[0057] In the example shown in FIGS. 4 and 5, an example in which the region in which the beam is made to pass is shifted by 1 column along the width direction of the mark M (the conversion scanning direction) each time is explained, but it can be shifted by a plurality of columns each time. However, the fewer the number of columns a in which the region in which the beam is made to pass is shifted, the more accurately the mark position can be measured. For example, it is preferable that at least a part of the second region in which the beam is made to pass shifted by a column a overlaps the first region in which the beam is made to pass.

[0058] In the above embodiment, an example in which the mark M on the XY stage 22 is conversion scanned is explained, but the mark provided on the substrate 70 for alignment can be conversion scanned when a phase shift mask is formed. The pattern drawing method for a phase shift mask is explained according to the flowchart shown. Figure 7

[0059] ​​First, a substrate 70 is prepared on which a halftone film, a light-shielding film, and a photoresist film are sequentially laminated on a glass substrate. For example, a MoSi film can be used for the halftone film. For example, a Cr film can be used for the light-shielding film. As a first layer drawing process (step S11), the main pattern of the first layer, which becomes the actual pattern, is drawn in the center of the substrate 70. Then, a cross-shaped marking pattern is drawn in the marking area around the main pattern of the first layer.

[0060] The substrate 70, on which the first layer pattern and the marking pattern are depicted, undergoes development and etching processes (step S12). The development process removes the resist from the beam-irradiated area, forming a resist pattern. Using the resist pattern as a mask, the exposed light-shielding film and halftone film are removed by etching. Then, the resist film is removed by ashing or similar methods, thereby forming the main pattern of the first layer and the surrounding markings on the substrate 70.

[0061] Then, the substrate 70, to which a resist film has been further formed, is moved into the drawing chamber 20. When drawing the pattern of the second layer, the marker M is converted and scanned, and the marker position is calculated (steps S13, S14).

[0062] Alignment calculations are performed based on the calculated mark positions, and the main pattern of the second layer is drawn at the aligned position on the substrate 70 (step S15). The substrate 70 with the second layer pattern is developed and etched to form the second layer pattern (step S16). In this way, a phase shift mask can be manufactured.

[0063] Because the position of the mark M, which is formed together with the first layer pattern, can be determined with high precision through conversion scanning, high-precision alignment can be achieved. As a result, mask loss caused by alignment misalignment can be reduced.

[0064] In addition, such conversion scanning can not only be used for drift correction and phase shift mask alignment as mentioned above, but also for adjusting the drawing position to avoid the defective parts of the EUV mask, thereby reducing phase defects in the pattern during EUV exposure.

[0065] It is also possible to combine conversion scans with deflection scans that produce almost no deflection strain and have a small deflection amount. For example, such as Figure 8a , Figure 8b As shown, the beam in region BG1 is turned on, and the marker M is deflected and scanned within a narrow range. The deflection amount is, for example, less than the width of marker M. The reflected electron signal from marker M is detected by detector 26. The detection result is as follows. Figure 8c As shown.

[0066] Return to the deflection position, such as Figure 9a , Figure 9bAs shown, the region where the beam is conducted is shifted one column to the right, thus conducting the beam in region BG2. The beam from region BG2 is used to deflect and scan marker M within a narrower range. The reflected electron signal from marker M is detected by detector 26. The detection results are as follows... Figure 9c As shown.

[0067] The guided beam region is switched sequentially, and the scanning mark M is deflected within a narrower range each time a switch is made. Figure 10a , Figure 10b This illustrates an example where the beam in region BG6 is turned on, deflecting the scanning marker M within a narrow range. The detection results of the reflected electron signal are as follows: Figure 10c As shown, the offset direction of the conductive beam region accompanying the switching of the conductive beam region and the deflection direction of the conductive beam based on deflection scanning are both parallel to the width direction of the marker M.

[0068] By combining the detection results of reflected electron signals obtained through deflection scanning of each conductive beam region, the following can be obtained: Figure 11 The graph shown can be used to calculate the marker position.

[0069] The shape of the overall image of multiple beams irradiating a substrate (beam shape) is ideally rectangular (e.g., square), but sometimes the beam shape changes for various reasons. For example, as... Figure 12a , Figure 12b As shown, the beam shape is sometimes deformed. In such cases, it is preferable to determine the position of the centroid of the guided beam region based on the position of the individual beams, and then calculate the marker position taking the centroid position into account.

[0070] The position of each individual beam is calculated as follows. First, the multi-beam deflection scan mark 40 is used. Then, each beam passes sequentially through the through-hole formed in the mark 40. The current detector 50 sequentially detects the beam current of each individual beam after it passes through the mark 40. The beam position calculation unit 115 calculates the position of each individual beam based on the beam current detection results.

[0071] The centroid position calculation unit 116 calculates the centroid position of the guided beam region based on the positions of the multiple individual beams included in the guided beam region. For example, such as Figure 12a , Figure 12b As shown, calculate the centroid positions (X1, Y1) of the guided beam in region BG1 and the centroid positions (X4, Y4) of the guided beam in region BG4.

[0072] The invention has been described in detail using specific methods, but it will be apparent to those skilled in the art that various modifications can be made without departing from the intent and scope of the invention.

[0073] This application is based on Japanese Patent Application No. 2020-027319 filed on February 20, 2020, the contents of which are incorporated herein by reference in its entirety.

[0074] Explanation of symbols

[0075] 1: drawing section; 2: lens barrel; 4: electron gun; 6: illumination lens; 8: shaped aperture array substrate; 10: blanking plate; 12: reduction lens; 14: limiting aperture member; 15: objective lens; 17: deflector; 20: drawing chamber; 22: XY stage; 28: mark substrate; 40: mark for beam position detection; 100: control section; 110: control computer.

Claims

1. A multi charged particle beam drawing method characterized by, forming a multi beam of K charged particle beams arranged at a prescribed interval in a beam region having a plurality of irradiation positions, switching the irradiation positions of L beams in the above beam region while irradiating the L beams of the above beam region to a mark provided at a prescribed position and having a width wider than the above prescribed interval, detecting a reflected charged particle signal from the mark, and calculating the position of the mark, by sequentially shifting the beam-on beam region in which L beams of the above multi beam are made to be on in a prescribed direction, wherein L < K, adjusting the irradiation positions of the above multi beam based on the calculated position of the mark to draw a pattern.

2. The multi charged particle beam drawing method according to claim 1, characterized by, deflecting the beams of the above beam-on beam region by a prescribed amount in the direction of the above shift when irradiating the above beam.

3. The multi charged particle beam drawing method according to claim 2, characterized by, irradiating different beams of the above beam-on beam region at both edges of the mark in the direction of the above shift, and detecting the mark position.

4. The multi charged particle beam drawing method according to claim 1, characterized by, the direction of the above shift is a direction perpendicular to the edges of the width direction of the mark.

5. The multi charged particle beam drawing method according to any one of claims 1 to 4, characterized by, measuring the position of each of a plurality of individual beams of the above beam-on beam region, calculating the center of gravity position of the above beam-on beam region based on the position of each of the above individual beams, calculating the position of the mark using the above center of gravity position of each of the above beam-on beam region.

6. The multi charged particle beam drawing method according to any one of claims 1 to 4, characterized by, part of a first beam-on beam region and a second beam-on beam region before and after switching overlap.

7. The multi charged particle beam drawing method according to any one of claims 1 to 4, characterized by, the mark is a metal mark provided on a stage on which a drawing target substrate is placed.

8. The multi charged particle beam drawing method according to any one of claims 1 to 4, characterized by, the mark is formed on a half tone film and a light shielding film sequentially layered on a glass substrate, and the glass substrate is placed on a stage.

9. The multi charged particle beam drawing method according to any one of claims 1 to 4, characterized by, the above beam-on beam region includes a plurality of beams arranged in a direction perpendicular to the edges of the width direction of the mark and a direction parallel thereto, respectively.

10. A multi-beamlet charged particle beam drawing device, characterized in that, provided with: a aperture array substrate that forms a multi beam of charged particle beams arranged at a prescribed interval in a beam region having a plurality of irradiation positions; a stage that places a drawing target substrate irradiated with the above multi beam; a control section that switches the irradiation positions of a part of the beams that are made to be on by sequentially shifting the beam-on beam region in which a part of the above multi beam is made to be on in a prescribed direction within the above beam region; a mark provided on the stage or on the drawing target substrate, the mark having a width wider than the prescribed interval; and a mark position calculation section that calculates the position of the mark based on a reflected charged particle signal detected when a beam that irradiates the beam region of the pilot beam irradiates the mark.

11. The multi charged particle beam drawing apparatus according to claim 10, wherein a deflector that deflects the beam of the pilot beam region by a prescribed amount in the direction of the offset when the beam that irradiates the beam region of the pilot beam irradiates the mark is further provided.

12. The multi charged particle beam drawing apparatus according to claim 10, wherein the direction of the offset is a direction perpendicular to an edge in the width direction of the mark.

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