Magnetic Sensor

Abstract

The magnetic sensor of the present invention has an MR element. The MR element includes a free layer. The free layer has a first surface that is long in one direction, and a second surface that is arranged on the opposite side of the first surface, and has a film thickness that is a dimension in a direction perpendicular to the first surface. The first surface has a first end and a second end located at both ends of the short side direction of the first surface. In any cross section, the film thickness at the first end is smaller than the film thickness at a predetermined point on the first surface between the first end and the second end.

Description

Technical Field

[0001] The present invention relates to a magnetic sensor including a magnetoresistive element. Background Art

[0002] In recent years, magnetic sensors using magnetoresistive effect elements have been used in various applications. As magnetoresistive effect elements, anisotropic magnetoresistive effect elements and spin valve type magnetoresistive effect elements are known. Anisotropic magnetoresistive effect elements include a magnetic layer having a set magnetic anisotropy and magnetization that can change direction according to the direction of the applied magnetic field. The spin valve type magnetoresistive effect element includes: a first magnetic layer (magnetization fixed layer) having magnetization with a fixed direction; a second magnetic layer (free layer) having magnetization that can change according to the direction of the applied magnetic field; and a spacer layer arranged between the first magnetic layer and the second magnetic layer. In the spin valve type magnetoresistive effect element, there is also a case where the magnetic anisotropy is set for the second magnetic layer (free layer).

[0003] Magnetic anisotropy is often controlled by shape magnetic anisotropy, which can be set by patterning the magnetoresistive element into a shape that is long in one direction.

[0004] In a system including a magnetic sensor, it is sometimes desired to detect a magnetic field including a component in a direction perpendicular to the surface of the substrate by a magnetoresistance effect element provided on a substrate. In this case, a magnetic field including a component in a direction perpendicular to the surface of the substrate can be detected by providing a soft magnetic body that converts a magnetic field in a direction perpendicular to the surface of the substrate into a magnetic field in a direction parallel to the surface of the substrate, or by arranging the magnetoresistance effect element on an inclined surface formed on the substrate.

[0005] In the specification of Chinese patent application No. 101142494A, a first and a second magnetic sensor are disclosed in which an X-axis sensor, a Y-axis sensor and a Z-axis sensor are provided on a substrate. In the first magnetic sensor, a V-shaped groove is formed on a thick film on the substrate. A strip portion of a giant magnetoresistance effect element forming the Z-axis sensor is provided at a position with good flatness in the central part of the inclined surface of the groove. The strip portion is a portion forming the main body of the giant magnetoresistance effect element and has a slender strip-shaped plane shape.

[0006] In the second magnetic sensor, a V-shaped groove having a first inclined surface and a second inclined surface is formed on a thick film on a substrate. The second inclined surface constitutes a lower half of the inclined surface of the groove. The angle formed by the second inclined surface and the substrate is greater than the angle formed by the first inclined surface and the substrate. A strip portion forming a giant magnetoresistance effect element of a Z-axis sensor is provided at a position with good flatness in the central part of the second inclined surface. The strip portion has a long and thin strip-shaped plane shape.

[0007] When an external magnetic field is applied to the magnetoresistive element, in a magnetic layer having magnetization whose direction can be changed, the direction of the magnetic moment inside the magnetic layer rotates according to the direction and strength of the external magnetic field, and as a result, the direction of the magnetization of the magnetic layer rotates. In addition, in this case, due to the magnetic charge generated at the end of the magnetic layer, a diamagnetic field in the opposite direction to the direction of the external magnetic field is generated in the magnetic layer. The closer the intensity of the diamagnetic field is to the magnetic charge, the greater the intensity of the magnetic field. Therefore, the intensity of the diamagnetic field increases at the end of the magnetic layer, and the intensity of the diamagnetic field decreases in the central part of the magnetic layer.

[0008] Here, consider the case where an external magnetic field in a predetermined direction intersecting the direction of the easy magnetization axis is applied to a magnetic layer having magnetic anisotropy based on shape magnetic anisotropy. The direction of the magnetic moment changes in a manner different between the central part of the magnetic layer and the part near the end of the magnetic layer as follows. When no external magnetic field is applied, the direction of the magnetic moment is oriented toward the direction of the easy magnetization axis. When the intensity of the external magnetic field is small, the direction of the magnetic moment in the central part of the magnetic layer begins to rotate according to the direction of the external magnetic field. However, the direction of the magnetic moment does not rotate or hardly rotates in the part near the end of the magnetic layer.

[0009] When the strength of the external magnetic field reaches a certain level, the direction of the magnetic moment in the central part of the magnetic layer is consistent or almost consistent with the direction of the external magnetic field. On the other hand, in the vicinity of the end of the magnetic layer, the direction of the magnetic moment begins to rotate according to the direction of the external magnetic field. When the strength of the external magnetic field increases further, the direction of the magnetic moment in the vicinity of the end of the magnetic layer also becomes consistent or almost consistent with the direction of the external magnetic field.

[0010] In this way, the reason why the direction of the magnetic moment changes unevenly in the entire magnetic layer is that the intensity of the antimagnetic field is different at the end of the magnetic layer and the central part of the magnetic layer. Since the direction of the magnetic moment changes unevenly, the magnetization of the magnetic layer changes nonlinearly with respect to the change in the intensity of the external magnetic field. As a result, the detection signal generated by the magnetic sensor changes nonlinearly with respect to the change in the intensity of the external magnetic field. The nonlinearity of the detection signal appears significantly as the intensity of the external magnetic field increases. If the range in which the detection signal changes linearly becomes narrower, the range of the intensity of the magnetic field that the magnetic sensor can actually detect becomes narrower, or the range of the detection signal actually used becomes narrower.

[0011] From the perspective of reducing errors or making signal processing easier, it is preferred that the range in which the detection signal changes linearly is wider. In order to suppress the nonlinearity caused by the difference in the strength of the diamagnetic field and expand the range in which the detection signal changes linearly, it is necessary to find a way to prevent the magnetic charge from concentrating at the end of the magnetic layer. However, such research has not been fully studied in the past. Summary of the invention

[0012] An object of the present invention is to provide a magnetic sensor capable of suppressing the concentration of magnetic charges on the end of a magnetic layer of a magnetoresistive element and expanding the range in which a detection signal changes linearly.

[0013] The magnetic sensor of the first and second viewpoints of the present invention is a magnetic sensor having a magnetoresistive effect element whose resistance value changes according to an external magnetic field. The magnetoresistive effect element includes a magnetic layer having a magnetization whose direction can change according to an external magnetic field. The magnetic layer has a first surface having a shape that is long in one direction and a second surface that is arranged on the opposite side of the first surface, and has a film thickness that is a dimension in a direction perpendicular to the first surface of the magnetic layer. The first surface has a first end and a second end located at both ends of the short side direction of the first surface.

[0014] In the magnetic sensor according to the first aspect of the present invention, in any cross section intersecting the magnetic layer and perpendicular to the longitudinal direction of the first surface, the film thickness at the first end is smaller than the film thickness at a predetermined point on the first surface between the first end and the second end.

[0015] In the magnetic sensor of the first aspect of the present invention, it is also possible that, in any cross section, the film thickness at the second end is greater than the film thickness at a predetermined point. In this case, in any cross section, the film thickness may also decrease as it approaches the first end from the second end. Alternatively, in any cross section, the film thickness at the second end may also be smaller than the film thickness at a predetermined point. In this case, in any cross section, the film thickness may also decrease as it approaches the first end from a predetermined point, and decrease as it approaches the second end from a predetermined point.

[0016] In the magnetic sensor of the second aspect of the present invention, at least a portion of the first surface is inclined relative to the reference plane in such a manner that the angle formed by the first surface relative to the reference plane, i.e., the inclination angle, is greater than 0. In any cross section intersecting the magnetic layer and perpendicular to the long side direction of the first surface, the inclination angle at the first end is greater than the inclination angle at a predetermined point on the first surface between the first end and the second end.

[0017] In the magnetic sensor of the second aspect of the present invention, it is also possible that, in any cross section, the inclination angle at the second end is smaller than the inclination angle at the prescribed point. In this case, in any cross section, the inclination angle may also increase as it approaches the first end from the second end. Alternatively, in any cross section, the inclination angle at the second end may also be larger than the inclination angle at the prescribed point. In this case, in any cross section, the inclination angle may also increase as it approaches the first end from the prescribed point, and increase as it approaches the second end from the prescribed point.

[0018] In the magnetic sensor according to the second aspect of the present invention, the magnetic layer may have a film thickness that is a dimension in a direction perpendicular to the first surface of the magnetic layer. The film thickness may decrease as the tilt angle increases.

[0019] In addition, the magnetic sensor of the first and second aspects of the present invention may also include a supporting member for supporting the magnetoresistance effect element. The supporting member has a relative surface relative to the magnetoresistance effect element. At least a portion of the relative surface may also be inclined relative to the reference plane. In this case, the film thickness at any position on the first surface may also decrease as the angle between the relative surface and the reference plane at the position on the relative surface closest to any position increases. In addition, the relative surface may also include a curved surface portion that is non-parallel to the reference plane. In this case, at least a portion of the magnetoresistance effect element may also be arranged on the curved surface portion. In addition, at least one of the first end and the second end may also be located above the curved surface portion.

[0020] The magnetic sensor of the third aspect of the present invention is a magnetic sensor having a magnetoresistive effect element whose resistance value changes according to an external magnetic field and a supporting member supporting the magnetoresistive effect element. The magnetoresistive effect element includes a magnetic layer having a magnetization whose direction can change according to an external magnetic field. The magnetic layer has a first surface having a shape that is long in one direction, and a second surface located on the opposite side of the first surface. The first surface has a first end and a second end located at both ends of the short side direction of the first surface.

[0021] The support member has an opposing surface that is opposite to the magnetoresistive effect element. At least a portion of the opposing surface is inclined relative to a reference plane. In any cross section that intersects the magnetic layer and is perpendicular to the long side direction of the first surface, the angle formed by the opposing surface relative to the reference plane is larger at a first position on the opposing surface closest to the first end than at a position on the opposing surface at a predetermined point on the first surface between the first end and the second end.

[0022] In the magnetic sensor of the third aspect of the present invention, the angle at the second position, which is the position on the opposite surface closest to the second end, may be smaller than the angle at the position on the opposite surface closest to the prescribed point. In this case, the angle may also increase as the second position approaches the first position. Alternatively, the angle at the second position may be larger than the angle at the position on the opposite surface closest to the prescribed point. In this case, the angle may increase as the position on the opposite surface closest to the prescribed point approaches the first position, and increase as the position on the opposite surface closest to the prescribed point approaches the second position.

[0023] In the magnetic sensor of the third aspect of the present invention, the magnetic layer may have a film thickness as a dimension in a direction perpendicular to the opposing surface. In this case, the film thickness at any position on the first surface may decrease as the angle at the position on the opposing surface closest to the arbitrary position increases.

[0024] In addition, in the magnetic sensor of the third aspect of the present invention, the opposing surface may also include a curved surface portion that is not parallel to the reference plane. In this case, at least a portion of the magnetoresistive effect element may also be arranged on the curved surface portion. In addition, at least one of the first end and the second end may also be located above the curved surface portion.

[0025] In the magnetic sensor of the first aspect of the present invention, in any cross section that intersects the magnetic layer and is perpendicular to the long side direction of the first surface, the film thickness at the first end is smaller than the film thickness at a predetermined point on the first surface between the first end and the second end. Thus, according to the present invention, it is possible to suppress the concentration of magnetic charges at the end of the magnetic layer of the magnetoresistive effect element, and expand the range in which the detection signal generated by the magnetic sensor changes linearly.

[0026] In the magnetic sensor of the second aspect of the present invention, in any cross section that intersects the magnetic layer and is perpendicular to the long side direction of the first surface, the inclination angle at the first end is larger than the inclination angle at a predetermined point on the first surface between the first end and the second end. Thus, according to the present invention, the film thickness at the first end can be made smaller than the film thickness at a predetermined point on the first surface between the first end and the second end. As a result, according to the present invention, the concentration of magnetic charges at the end of the magnetic layer of the magnetoresistive effect element can be suppressed, and the range in which the detection signal generated by the magnetic sensor changes linearly can be expanded.

[0027] In the magnetic sensor of the third aspect of the present invention, in any cross section that intersects the magnetic layer and is perpendicular to the long side direction of the first surface, the angle formed by the relative surface relative to the reference plane becomes larger at the first position, which is the position on the relative surface closest to the first end, compared with the position on the relative surface at the prescribed point on the first surface between the first end and the second end. Thus, according to the present invention, the film thickness at the first end can be made smaller than the film thickness at the prescribed point on the first surface between the first end and the second end. As a result, according to the present invention, the concentration of magnetic charges at the end of the magnetic layer of the magnetoresistive effect element can be suppressed, and the range in which the detection signal generated by the magnetic sensor changes linearly can be expanded.

[0028] Other objects, features and advantages of the present invention will become more apparent from the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 It is an explanatory diagram showing a schematic configuration of a magnetic sensor system in the first embodiment of the present invention.

[0030] Figure 2 : is a circuit diagram showing the circuit configuration of the magnetic sensor according to the first embodiment of the present invention.

[0031] Figure 3 It is a schematic diagram showing a part of the magnetic sensor according to the first embodiment of the present invention.

[0032] Figure 4 It is a cross-sectional view showing a part of the magnetic sensor according to the first embodiment of the present invention.

[0033] Figure 5 It is a plan view showing a part of the magnetic sensor according to the first embodiment of the present invention.

[0034] Figure 6 It is a cross-sectional view showing a magnetoresistance effect element according to the first embodiment of the present invention.

[0035] Figure 7 It is an explanatory diagram for explaining the shape of the free layer in the first embodiment of the present invention.

[0036] Figure 8 It is an explanatory diagram for explaining magnetic charges in a magnetoresistive effect element of a comparative example.

[0037] Fig. 9 It is an explanatory diagram for explaining magnetic charges in the magnetoresistive effect element in the first embodiment of the present invention.

[0038] Fig.10 : is a characteristic diagram showing the relationship between the external magnetic field and the detection signal in the first embodiment of the present invention.

[0039] Fig.11 This is a cross-sectional view showing a first modified example of the magnetoresistive effect element in the first embodiment of the present invention.

[0040] Fig.12 It is an explanatory diagram for explaining a second modified example of the magnetoresistive effect element in the first embodiment of the present invention.

[0041] Fig.13 It is an explanatory diagram for explaining a third modified example of the magnetoresistive effect element in the first embodiment of the present invention.

[0042] Fig.14 Yes means Fig.13 A cross-sectional view of the cross section at the position indicated by line 14-14.

[0043] Fig.15 Yes means Fig.13 A cross-sectional view of the cross section at the position indicated by line 15-15.

[0044] Fig.16 It is a schematic diagram showing a part of a magnetic sensor according to a second embodiment of the present invention.

[0045] Fig.17 It is a cross-sectional view showing a part of a magnetic sensor according to a second embodiment of the present invention.

[0046] Fig.18 It is an explanatory diagram for explaining the shape of the free layer in the second embodiment of the present invention.

[0047] Fig.19 This is a cross-sectional view showing a cross section of a magnetic sensor according to a third embodiment of the present invention.

[0048] Fig. 20 It is an explanatory diagram for explaining the shape of the free layer in the third embodiment of the present invention. DETAILED DESCRIPTION

[0049] [First embodiment]

[0050] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Figure 1 The magnetic sensor system 100 of this embodiment includes the magnetic sensor 1 of this embodiment and a magnetic field generator 5 that generates a magnetic field (detection target magnetic field) to be detected by the magnetic sensor 1, that is, a target magnetic field MF.

[0051] The magnetic field generator 5 can rotate around the rotation axis C. The magnetic field generator 5 includes a pair of magnets 6A and 6B. The magnets 6A and 6B are arranged at positions symmetrical to each other around an imaginary plane including the rotation axis C. The magnets 6A and 6B have an N pole and an S pole, respectively. The magnets 6A and 6B are arranged in a posture where the N pole of the magnet 6A and the S pole of the magnet 6B face each other. The magnetic field generator 5 generates a target magnetic field MF in a direction from the N pole of the magnet 6A to the S pole of the magnet 6B.

[0052] The magnetic sensor 1 is arranged at a position capable of detecting the target magnetic field MF at a predetermined reference position. The target magnetic field MF at the reference position is a part of the magnetic field generated by each of the magnets 6A and 6B. The reference position may also be located on the rotation axis C. In the following description, the reference position is located on the rotation axis C. The magnetic sensor 1 detects the target magnetic field MF generated by the magnetic field generator 5 and generates a detection value Vs. The detection value Vs has a corresponding relationship with the relative position of the magnetic field generator 5 with respect to the magnetic sensor 1, in particular, with the rotation position.

[0053] The magnetic sensor system 100 can be used as a device for detecting the rotational position of a movable part in a device including a rotatable movable part. Such a device includes, for example, a joint of an industrial robot. Figure 1 An example in which the magnetic sensor system 100 is applied to an industrial robot 200 is shown.

[0054] Figure 1 The industrial robot 200 shown includes a movable part 201 and a support part 202 that supports the movable part 201 so as to be rotatable. The connection part between the movable part 201 and the support part 202 is a joint. The movable part 201 rotates around the rotation axis C. When the magnetic sensor system 100 is applied to the joint of the industrial robot 200, for example, the magnetic sensor 1 can be fixed to the support part 202 and the magnets 6A and 6B can be fixed to the movable part 201.

[0055] Here, if Figure 1 As shown in FIG. 1 , an X direction, a Y direction, and a Z direction are defined. The X direction, the Y direction, and the Z direction are orthogonal to each other. In this embodiment, a direction ( Figure 1 The direction from the inside to the front is the X direction. Figure 1 In the figure, the Y direction is indicated as the direction toward the right, and the Z direction is indicated as the direction toward the upper side. In addition, the direction opposite to the X direction is referred to as the -X direction, the direction opposite to the Y direction is referred to as the -Y direction, and the direction opposite to the Z direction is referred to as the -Z direction. In addition, hereinafter, the position in front of the reference position in the Z direction is referred to as "upper", and the position on the opposite side of the "upper" relative to the reference position is referred to as "lower".

[0056] In the present embodiment, the direction of the target magnetic field MF at the reference position is expressed as a direction in the YZ plane including the reference position on the rotation axis C. The direction of the target magnetic field MF at the reference position rotates around the reference position in the YZ plane.

[0057] The magnetic sensor 1 includes a magnetoresistive element (hereinafter referred to as an MR element) whose resistance value changes according to an external magnetic field. In the present embodiment, the resistance value of the MR element changes according to a change in the direction of the target magnetic field MF. The magnetic sensor 1 generates a detection signal corresponding to the resistance value of the MR element, and generates a detection value Vs based on the detection signal.

[0058] Next, the structure of the magnetic sensor 1 according to the present embodiment will be described. Figure 2 , an example of the circuit structure of the magnetic sensor 1 is described. Figure 2In the example shown, the magnetic sensor 1 includes four resistors 11 , 12 , 13 , and 14 , two power supply terminals V1 and V2 , two ground terminals G1 and G2 , and two signal output terminals E1 and E2 .

[0059] Each of the resistor sections 11 to 14 includes at least one MR element 30. When each of the resistor sections 11 to 14 includes a plurality of MR elements 30, the plurality of MR elements 30 may be connected in series in each of the resistor sections 11 to 14.

[0060] The resistor 11 is provided between the power supply terminal V1 and the signal output terminal E1. The resistor 12 is provided between the signal output terminal E1 and the ground terminal G1. The resistor 13 is provided between the power supply terminal V2 and the signal output terminal E2. The resistor 14 is provided between the signal output terminal E2 and the ground terminal G2. A power supply voltage of a predetermined magnitude is applied to the power supply terminals V1 and V2. The ground terminals G1 and G2 are grounded.

[0061] The potential at the connection point between the resistor section 11 and the resistor section 12 changes depending on the resistance value of at least one MR element 30 of the resistor section 11 and the resistance value of at least one MR element 30 of the resistor section 12. The signal output terminal E1 outputs a signal corresponding to the potential at the connection point between the resistor section 11 and the resistor section 12 as a detection signal S1.

[0062] The potential at the connection point between the resistor section 13 and the resistor section 14 changes depending on the resistance value of at least one MR element 30 of the resistor section 13 and the resistance value of at least one MR element 30 of the resistor section 14. The signal output terminal E2 outputs a signal corresponding to the potential at the connection point between the resistor section 13 and the resistor section 14 as a detection signal S2.

[0063] The magnetic sensor 1 further includes a detection value generation circuit 21 that generates a detection value Vs based on the detection signals S1 and S2. The detection value generation circuit 21 is formed of, for example, an application specific integrated circuit (ASIC) or a microcomputer.

[0064] Next, the structure of the magnetic sensor 1 will be described in further detail, focusing on one MR element 30 . Figure 3 1 is a schematic diagram showing a part of the magnetic sensor 1 . Figure 4 is a cross-sectional view showing a part of the magnetic sensor 1. It should be noted that Figure 4 The cross section parallel to the YZ plane and intersecting the MR element 30 is shown. Figure 5 It is a plan view showing a part of the magnetic sensor 1 .

[0065] The magnetic sensor 1 further includes a supporting member 60. The supporting member 60 supports all the MR elements 30 included in the resistor portions 11 to 14. Figure 3 as well as Figure 4As shown, the support member 60 has an opposing surface 60a at least partially opposed to the MR element 30 and a lower surface 60b located on the opposite side of the opposing surface 60a. The opposing surface 60a is located at the end of the support member 60 in the Z direction. The lower surface 60b is located at the end of the support member 60 in the -Z direction. The lower surface 60b is parallel to the XY plane. The lower surface 60b corresponds to the reference plane of the present invention. The magnetic sensor 1, for example, can also be manufactured horizontally with respect to the lower surface 60b or the surface corresponding to the lower surface 60b. In addition, the magnetic sensor 1, for example, can also be set based on the orientation and inclination of the surface corresponding to the lower surface 60b or the lower surface 60b. In this way, the lower surface 60b can also be a surface that serves as a reference for at least one of the manufacturing and setting of the magnetic sensor 1.

[0066] At least a portion of the opposing surface 60a of the support member 60 is inclined relative to the reference plane, that is, the lower surface 60b. In this embodiment, the opposing surface 60a includes a planar portion 60a1 parallel to the lower surface 60b and at least one curved portion 60a2 not parallel to the lower surface 60b. Figure 4 As shown in FIG. 1 , the curved surface portion 60a2 is a convex surface protruding in a direction away from the lower surface 60b. The curved surface portion 60a2 has a curved shape (arch shape) that is curved in a manner protruding in a direction (Z direction) away from the lower surface 60b in any cross section parallel to the YZ plane. In any cross section parallel to the YZ plane, the distance from the lower surface 60b to the curved surface portion 60a2 is the largest at the center of the curved surface portion 60a2 in a direction parallel to the Y direction (hereinafter referred to as the center of the curved surface portion 60a2).

[0067] The curved surface portion 60a2 extends along the X direction. Figure 3 As shown, the overall shape of the curved portion 60a2 is such that Figure 4 The curved shape (arch shape) shown is a semi-cylindrical curved surface moving along the X direction.

[0068] At least a portion of the MR element 30 is disposed on the curved surface portion 60a2. Here, the portion of the curved surface portion 60a2 from the end portion located at the end of the curved surface portion 60a2 in the -Y direction to the center of the curved surface portion 60a2 is referred to as a first inclined surface and is denoted by symbol SL1. In addition, the portion of the curved surface portion 60a2 from the end portion located at the end of the curved surface portion 60a2 in the Y direction to the center of the curved surface portion 60a2 is referred to as a second inclined surface and is denoted by symbol SL2. Figure 3 In FIG. 1 , the boundary between the first inclined surface SL1 and the second inclined surface SL2 is indicated by a dotted line. The first and second inclined surfaces SL1 and SL2 are both inclined relative to the reference plane, that is, the lower surface 60b. In this embodiment, the entire MR element 30 is arranged on the first inclined surface SL1 or the second inclined surface SL2. Figure 3 and Figure 4 , the MR element 30 arranged on the first slanted surface SL1 is shown.

[0069] The MR element 30 has a shape that is long in the X direction. Here, the short side direction of the MR element 30 is referred to as the width direction of the MR element 30 or simply the width direction. The planar shape (shape viewed from the Z direction) of the MR element 30 may be a shape including a constant or substantially constant width portion whose width dimension is independent of the position in the X direction, such as a rectangle, or a shape including no constant width portion, such as an ellipse. Examples of the planar shape of the MR element 30 including a constant width portion include a rectangle whose both ends in the long side direction are straight lines, an oval whose both ends in the long side direction are semicircles, and a polygon whose both ends in the long side direction are polygons. Figure 3 The example in which the planar shape of the MR element 30 is a rectangle is shown. It should be noted that in the second modified example described later, the example in which the planar shape of the MR element 30 is an oval is shown. The MR element 30 has a width which is a dimension in a direction parallel to the Y direction. The dimension in the width direction of the MR element 30 is constant or substantially constant regardless of the position in the X direction.

[0070] The support member 60 includes a substrate 61 and an insulating layer 62 disposed on the substrate 61. The substrate 61 is, for example, a semiconductor substrate composed of a semiconductor such as Si. The substrate 61 has an upper surface located at the end of the substrate 61 in the Z direction and a lower surface located at the end of the substrate 61 in the -Z direction. The lower surface 60b of the support member 60 is composed of the lower surface of the substrate 61. The thickness (dimension in the Z direction) of the substrate 61 is constant.

[0071] The insulating layer 62 is made of an insulating material such as SiO2. The insulating layer 62 has an upper surface located at an end in the Z direction. The opposing surface 60a of the support member 60 is formed by the upper surface of the insulating layer 62. The insulating layer 62 has a cross-sectional shape in which a curved surface portion 60a2 is formed on the opposing surface 60a. Specifically, the insulating layer 62 has a cross-sectional shape that extends in the Z direction in any cross section parallel to the YZ plane.

[0072] The magnetic sensor 1 further includes a lower electrode 41, an upper electrode 42, and insulating layers 63, 64, and 65. Figure 3 In FIG. 4 , the lower electrode 41, the upper electrode 42 and the insulating layers 63 to 65 are omitted. Figure 5 Insulating layers 63 to 65 are omitted.

[0073] The lower electrode 41 is arranged on the opposing surface 60a of the support member 60 (the upper surface of the insulating layer 62). The insulating layer 63 is arranged around the lower electrode 41 on the opposing surface 60a of the support member 60. The MR element 30 is arranged on the lower electrode 41. The insulating layer 64 is arranged around the MR element 30 on the lower electrode 41 and the insulating layer 63. The upper electrode 42 is arranged on the MR element 30 and the insulating layer 64. The insulating layer 65 is arranged around the upper electrode 42 on the insulating layer 64.

[0074] The magnetic sensor 1 further includes an insulating layer (not shown) covering the upper electrode 42 and the insulating layer 65. The lower electrode 41 and the upper electrode 42 are made of a conductive material such as Cu. The insulating layers 63 to 65 and the insulating layer (not shown) are made of an insulating material such as SiO2.

[0075] Here, the substrate 61 and the components stacked on the substrate 61 in the magnetic sensor 1 are collectively referred to as a detection unit. Figure 4 It can also be said to represent a detection unit. Figure 2 The detection value generating circuit 21 shown may be integrated with the detection section or may be separate from the detection section.

[0076] Here, refer to Figure 6 , the structure of the MR element 30 is described in detail. In this embodiment, the MR element 30 is a spin valve type MR element with a CPP (Current Perpendicular-to-Plane) structure. Figure 6 As shown, the MR element 30 includes: a magnetization fixed layer 32 having magnetization whose direction is fixed; a free layer 34 having magnetization that can change according to the direction of an external magnetic field; and a spacer layer 33 disposed between the magnetization fixed layer 32 and the free layer 34. The MR element 30 can be a TMR (tunnel magnetoresistance effect) element or a GMR (giant magnetoresistance effect) element. In a TMR element, the spacer layer 33 is a tunnel barrier layer. In a GMR element, the spacer layer 33 is a non-magnetic conductive layer. In the MR element 30, the resistance value changes according to the angle between the magnetization direction of the free layer 34 and the magnetization direction of the magnetization fixed layer 32. When the angle is 0°, the resistance value becomes the minimum value, and when the angle is 180°, the resistance value becomes the maximum value.

[0077] The magnetization fixed layer 32, the spacer layer 33, and the free layer 34 are stacked in order from the lower electrode 41 side in the direction from the lower electrode 41 to the upper electrode 42. The MR element 30 further includes a base layer 31 between the magnetization fixed layer 32 and the lower electrode 41 and a cover layer 35 between the free layer 34 and the upper electrode 42. It should be noted that the configuration of the magnetization fixed layer 32, the spacer layer 33, and the free layer 34 in the MR element 30 may also be different from Figure 6The configuration shown is upside down.

[0078] The magnetization direction of the magnetization fixed layer 32 is preferably perpendicular to the long side direction of the MR element 30. In the present embodiment, the MR element 30 is arranged on the first inclined surface SL1 or the second inclined surface SL2 inclined relative to the lower surface 60b. Therefore, the magnetization direction of the magnetization fixed layer 32 is also inclined relative to the lower surface 60b.

[0079] In the present embodiment, for convenience, the magnetization direction of the magnetization fixed layer 32 disposed on the first inclined surface SL1 is set to the U direction or the -U direction. The U direction is a direction rotated by a predetermined angle from the Y direction toward the Z direction. The -U direction is a direction opposite to the U direction. In addition, in the present embodiment, for convenience, the magnetization direction of the magnetization fixed layer 32 disposed on the second inclined surface SL2 is set to the V direction or the -V direction. The V direction is a direction rotated by a predetermined angle from the Y direction toward the -Z direction. The -V direction is a direction opposite to the V direction.

[0080] exist Figure 2 The X direction, U direction and V direction are shown in FIG. Figure 2 In , for convenience, the same arrow is used to represent the U direction and the V direction. Figure 2 In FIG. 1 , the black arrows indicate the magnetization directions of the magnetization fixed layers 32 of the MR elements 30 included in the resistor sections 11 to 14, respectively. The magnetic sensor 1 may be configured such that the magnetization directions of the magnetization fixed layers 32 of the MR elements 30 in the resistor sections 11 and 14 are in the U direction, and the magnetization directions of the magnetization fixed layers 32 of the MR elements 30 in the resistor sections 12 and 13 are in the -U direction. Alternatively, the magnetic sensor 1 may be configured such that the magnetization directions of the magnetization fixed layers 32 of the MR elements 30 in the resistor sections 11 and 14 are in the V direction, and the magnetization directions of the magnetization fixed layers 32 of the MR elements 30 in the resistor sections 12 and 13 are in the -V direction.

[0081] Alternatively, the magnetic sensor 1 may include a first circuit portion and a second circuit portion, each including the resistors 11 to 14. In the first circuit portion, the magnetization direction of the magnetization fixed layer 32 of the MR element 30 in the resistors 11 and 14 may be the U direction, and the magnetization direction of the magnetization fixed layer 32 of the MR element 30 in the resistors 12 and 13 may be the -U direction. In the second circuit portion, the magnetization direction of the magnetization fixed layer 32 of the MR element 30 in the resistors 11 and 14 may be the V direction, and the magnetization direction of the magnetization fixed layer 32 of the MR element 30 in the resistors 12 and 13 may be the -V direction.

[0082] The free layer 34 corresponds to the magnetic layer of the present invention. The free layer 34 has a shape magnetic anisotropy in which the easy magnetization axis direction is in a direction intersecting the magnetization direction of the magnetization fixed layer 32. In this embodiment, the MR element 30 is patterned into a shape that is long in the X direction. Thus, the free layer 34 has a shape magnetic anisotropy in which the easy magnetization axis direction is in a direction parallel to the X direction.

[0083] So far, the structure of the magnetic sensor 1 has been described with a focus on one MR element 30. In this embodiment, each of the resistors 11 to 14 includes at least one MR element 30. Therefore, the magnetic sensor 1 includes a plurality of MR elements 30, a plurality of lower electrodes 41, and a plurality of upper electrodes 42. Figure 5 As shown, each lower electrode 41 has an elongated shape. On the upper surface of the lower electrode 41, an MR element 30 is arranged near one end in the longitudinal direction. Each upper electrode 42 has an elongated shape and is arranged on two lower electrodes 41 to electrically connect two adjacent MR elements 30.

[0084] The number of the curved surface portions 60a2 of the opposing surface 60a of the support member 60 may be one or more. When the number of the curved surface portions 60a2 is one, a plurality of MR elements 30 are arranged on the one curved surface portion 60a2. In this case, the plurality of MR elements 30 may be arranged only on one of the first inclined surface SL1 and the second inclined surface SL2, or may be arranged on both the first inclined surface SL1 and the second inclined surface SL2.

[0085] When there are a plurality of curved surface portions 60a2, one MR element 30 may be arranged on one curved surface portion 60a2, or a plurality of MR elements 30 may be arranged. In this case, the plurality of curved surface portions 60a2 may be arranged in a row along one direction, or in a plurality of rows in the X direction and the Y direction.

[0086] Next, refer to Figure 6 as well as Figure 7 , the MR element 30 will be described in further detail. Figure 7 It is an explanatory diagram for explaining the shape of the free layer 34 . Figure 7 Yes Figure 4 It should be noted that in Figure 7 In the figure, the base layer 31 and the cover layer 35 in the MR element 30 are omitted.

[0087] like Figure 6 and Figure 7As shown, the free layer 34 has a first surface 34a, a second surface 34b on the opposite side of the first surface 34a, and an outer peripheral surface connecting the first surface 34a and the second surface 34b. The first surface 34a is located at a position farther away from the opposite surface 60a of the support member 60 than the second surface 34b. The first surface 34a is connected to the cover layer 35. The second surface 34b is connected to the spacer layer 33.

[0088] In the present embodiment, the MR element 30 is patterned into a shape that is long in the X direction. Therefore, the first and second surfaces 34a, 34b each have a shape that is long in the X direction. The first surface 34a has a first end Ed1 and a second end Ed2 located at both ends of the short side direction of the first surface 34a. At least one of the first end Ed1 and the second end Ed2 is located above the curved surface portion 60a2 of the opposite surface 60a of the support member 60. As a result, at least a portion of the first surface 34a is inclined relative to the reference plane, that is, the lower surface 60b of the support member 60. Here, the angle formed by the first surface 34a with respect to the lower surface 60b of the support member 60 is called the inclination angle, which is represented by the symbol θ. The inclination angle θ is greater than 0° and less than 90°. At least a portion of the first surface 34a is inclined relative to the lower surface 60b of the support member 60 in a manner such that the inclination angle θ is greater than 0°.

[0089] It should be noted that the shape of the free layer 34 sometimes changes discontinuously and significantly near the outer peripheral surface. In order to accurately define the inclination angle θ, in this embodiment, for convenience, the two ends of the short side direction of the portion of the first surface 34a other than the portion that changes discontinuously and significantly are set as the first end Ed1 and the second end Ed2. The first end Ed1 and the second end Ed2 may also be located at a position closer to the inside of the first surface 34a than the boundary between the first surface 34a and the outer peripheral surface. In the case where the shape of the free layer 34 changes discontinuously, the first end Ed1 and the second end Ed2 are located at the boundary between the first surface 34a and the outer peripheral surface.

[0090] In addition, in the present embodiment, both the first end Ed1 and the second end Ed2 are located above the first inclined surface SL1 of the curved surface portion 60a2, or both the first end Ed1 and the second end Ed2 are located above the second inclined surface SL2 of the curved surface portion 60a2. Thus, the entire first surface 34a is inclined relative to the reference plane, that is, the lower surface 60b of the support member 60. The distance from the lower surface 60b of the support member 60 to the first end Ed1 is smaller than the distance from the lower surface 60b of the support member 60 to the second end Ed2.

[0091] Figure 7Represents a cross section that intersects the free layer 34 and is perpendicular to the long side direction (direction parallel to the X direction) of the first surface 34a. Hereinafter, the cross section is indicated by the reference symbol S. The cross section S is also a cross section parallel to the YZ plane. Here, the inclination angle θ at the first end Ed1 is recorded as the inclination angle θ1, the inclination angle θ at the second end Ed2 is recorded as the inclination angle θ2, and the inclination angle θ at a specified point P on the first surface 34a between the first end Ed1 and the second end Ed2 is recorded as the symbol θp.

[0092] In any cross section S, the inclination angle θ1 at the first end Ed1 is larger than the inclination angle θp at the predetermined point P. In addition, in any cross section S, the inclination angle θ2 at the second end Ed2 is smaller than the inclination angle θp. Figure 7 As shown in FIG. 1 , in any cross section S, the inclination angle θ increases as the second end portion Ed2 approaches the first end portion Ed1. Figure 7 In the diagram, a predetermined point P is defined as a midpoint between the first end Ed1 and the second end Ed2 on the first surface 34 a in an arbitrary cross section S.

[0093] The inclination angle θ at any position on the first surface 34a varies depending on the angle (hereinafter referred to as the inclination angle of the relative surface 60a) formed by the relative surface 60a of the support member 60 relative to the reference plane, that is, the lower surface 60b of the support member 60. Specifically, the inclination angle θ at any position on the first surface 34a is substantially equal to the inclination angle of the relative surface 60a at the position on the relative surface 60a closest to the arbitrary position. Therefore, the inclination angle θ increases as the inclination angle of the relative surface 60a increases.

[0094] The free layer 34 has a film thickness T as a dimension in a direction perpendicular to the first surface 34a. The film thickness T is also the interval between the first surface 34a and the second surface 34b in the direction perpendicular to the first surface 34a. Here, the film thickness T at the first end Ed1 is recorded as film thickness T1, the film thickness T at the second end Ed2 is recorded as film thickness T2, and the film thickness T at a predetermined point P is recorded as film thickness Tp. It should be noted that, regarding the film thickness T2, for convenience, it is assumed that the second surface 34b is extended along the curved surface portion 60a2 to obtain an imaginary surface, and the interval between the first surface 34a and the imaginary surface in the direction perpendicular to the first surface 34a is set to film thickness T2.

[0095] In any cross section S, the film thickness T1 at the first end Ed1 is smaller than the film thickness Tp at a predetermined point P. In addition, in any cross section S, the film thickness T2 at the second end Ed2 is larger than the film thickness Tp. Figure 7 As shown, in any cross section S, the film thickness T decreases as it approaches the first end Ed1 from the second end Ed2.

[0096] The film thickness T at any position on the first surface 34a changes depending on the inclination angle of the opposing surface 60a. Specifically, the film thickness T at any position on the first surface 34a decreases as the inclination angle of the opposing surface 60a at the position closest to the arbitrary position increases.

[0097] In addition, according to the relationship between the inclination angle θ and the inclination angle of the opposing surface 60 a and the relationship between the film thickness T and the inclination angle of the opposing surface 60 a , the film thickness T decreases as the inclination angle θ increases.

[0098] In this embodiment, the entire MR element 30 is disposed on the first inclined surface SL1 or the second inclined surface SL2. Hereinafter, the angle formed by the first inclined surface SL1 or the second inclined surface SL2 with respect to the lower surface 60b of the support member 60 is referred to as the inclined surface angle, and is denoted by Indicates. Figure 7 As shown, the inclination angle θ at any position on the first surface 34a changes with the angle of the inclined surface at the position on the opposite surface 60a closest to the arbitrary position. In addition, as Figure 7 As shown, the film thickness T at an arbitrary position on the first surface 34a changes with the angle of the inclined surface at a position on the opposite surface 60a closest to the arbitrary position. It should be noted that Figure 7 In the middle, use the mark represents the angle of the inclined surface at the position on the opposite surface 60a closest to the first end Ed1 Use a mark represents the angle of the inclined surface at the position on the opposite surface 60a closest to the second end Ed2 Use a mark The angle of the slope at the position on the opposite surface 60a closest to the predetermined point P is represented by

[0099] Any angle in the cross section S The angle φ is larger at a position on the opposing surface 60a closest to the first end Ed1 than at a position on the opposing surface 60a closest to the predetermined point P. That is, the angle Angle In addition, the angle Less than angle like Figure 7 As shown, the angle in any section S The distance increases from the position on the opposing surface 60 a closest to the second end Ed2 to the position on the opposing surface 60 a closest to the first end Ed1 .

[0100] Here, the film thickness T and the angle of the slope Here, as an example of the MR element 30 of the embodiment, a case where a TMR element is formed on the first inclined surface SL1 is taken as an example for explanation. In this example, a TMR element is formed using a magnetron sputtering device, and a cross-sectional transmission electron microscope (cross-sectional TEM) is used to measure the film thickness T of the free layer 34 of the MR element 30 (TMR element). It should be noted that in the MR element 30 (TMR element) of the embodiment, the distance from the first end Ed1 to the second end Ed2 in the cross section parallel to the YZ plane is 1.3μm.

[0101] In the embodiment, the film thickness T1 at the first end Ed1 is 9.0 nm. The angle of the inclined surface at the position on the opposing surface 60a closest to the first end Ed1 is It is 39.1°.

[0102] In the embodiment, the film thickness T2 at the second end Ed2 is 10.9 nm. The angle of the inclined surface at the position on the opposite surface 60a closest to the second end Ed2 is It is 25.2°.

[0103] It should be noted that if the MR element 30 is actually manufactured, the surface roughness of the first surface 34a of the free layer 34 may sometimes be so large that the influence on each parameter cannot be ignored. In this case, in order to reduce the measurement error, the tilt angle θ including the tilt angles θ1, θ2, and θp can also be measured as follows. First, the average line (straight line) of the cross-sectional curve of the first surface 34a near the measurement point of the tilt angle θ is obtained. Then, the average line is regarded as the tangent of the first surface 34a at the measurement point, and the angle between the average line and the lower surface 60b of the support member 60 is measured as the tilt angle θ at the measurement point. The length of the average line is preferably the length that intersects the cross-sectional curve multiple times. For example, in the MR element 30 (TMR element) of the embodiment, the length of the average line can also be set to be within the range of 10 to 100 nm. The above-mentioned angle measurement method can also be used as a specific definition of the tilt angle θ in this embodiment.

[0104] In addition, in order to reduce the measurement error, the direction perpendicular to the above-mentioned average line may be regarded as the direction perpendicular to the first surface 34a, and the film thickness T at the measurement point may be measured. Alternatively, when the surface roughness of the opposing surface 60a including the curved surface portion 60a2 is smaller than that of the first surface 34a, the direction perpendicular to the opposing surface 60a at the position on the opposing surface 60a closest to the measurement point may be regarded as the direction perpendicular to the first surface 34a, and the film thickness T at the measurement point may be measured. Any of the above-mentioned methods for measuring the film thickness T may be used as a specific definition of the film thickness T in this embodiment.

[0105] Next, the function and effect of the magnetic sensor 1 involved in this embodiment are described. In this embodiment, in any cross section S, the film thickness T1 at the first end Ed1 is smaller than the film thickness Tp at a predetermined point P. In this embodiment, further, in any cross section S, the film thickness T2 at the second end Ed2 is larger than the film thickness Tp. Thus, according to this embodiment, it is possible to suppress the concentration of magnetic charges to the first end Ed1 and its vicinity in the free layer 34.

[0106] In the present embodiment, in any cross section S, the inclination angle θ1 at the first end Ed1 is larger than the inclination angle θp at the predetermined point P. In any cross section S, the inclination angle θ2 at the second end Ed2 is smaller than the inclination angle θp at the predetermined point P. The inclination angle θ is substantially equal to the inclination angle of the opposing surface 60 a and can be controlled by changing the position of the MR element 30 and the inclination angle of the opposing surface 60 a itself.

[0107] As described above, the film thickness T decreases as the inclination angle of the opposing surface 60a increases. Such a relationship between the film thickness T and the inclination angle of the opposing surface 60a can be achieved by forming the MR element 30 using a so-called non-contact film forming device such as a magnetron sputtering device. The inclination angle θ can be controlled by the inclination angle of the opposing surface 60a and the arrangement of the MR element 30. According to the present embodiment, the film thickness T can be controlled by controlling the inclination angle θ as described above.

[0108] The following describes in detail the effect of suppressing the concentration of magnetic charges by comparing with the MR element 230 of the comparative example. Figure 8 , an MR element 230 of a comparative example will be described. Figure 8 It is an explanatory diagram for explaining the magnetic charge in the MR element 230 of the comparative example. Figure 8 2 shows a cross section corresponding to the cross section S. The MR element 230 of the comparative example includes a magnetization fixed layer 232 , a spacer layer 233 , a free layer 234 , and a base layer and a cap layer (not shown), similarly to the MR element 30 of the present embodiment.

[0109] The MR element 230 of the comparative example is arranged on a plane parallel to the reference plane (the lower surface 60b of the support member 60). In addition, the MR element 230 is patterned into a shape that is long in the X direction, similarly to the MR element 30 of the present embodiment. As a result, the free layer 234 has a shape magnetic anisotropy in which the easy magnetization axis direction is parallel to the X direction.

[0110] The free layer 234 has a first surface 234a located at the end of the Z direction, a second surface 234b on the opposite side of the first surface 234a, and an outer peripheral surface connecting the first surface 234a and the second surface 234b. The first and second surfaces 234a, 234b are both planes parallel to the reference plane. The first and second surfaces 234a, 234b have shapes that are longer in the X direction. The first surface 234a has a first end Ed11 and a second end Ed12 located at both ends of the short side direction of the first surface 234a, that is, the direction parallel to the Y direction. In the comparative example, in particular, the first end Ed11 is an end located at the end of the first surface 234a in the -Y direction, and the second end Ed12 is an end located at the end of the first surface 234a in the Y direction.

[0111] When an external magnetic field is applied to the MR element 230, the direction of the magnetic moment inside the free layer 234 rotates according to the direction and strength of the external magnetic field, resulting in the rotation of the magnetization direction of the free layer 234. In this case, magnetic charges are generated on the outer peripheral surface of the free layer 234.

[0112] Here, consider the case where an external magnetic field in the Y direction is applied to the MR element 230. When the external magnetic field in the Y direction is applied, the positive magnetic charge is concentrated in the vicinity of the second end Ed12 of the outer peripheral surface of the free layer 234, and the negative magnetic charge is concentrated in the vicinity of the first end Ed11 of the outer peripheral surface of the free layer 234. Figure 8 In the diagram, the "+" sign indicates a positive magnetic charge, and the "-" sign indicates a negative magnetic charge. Due to these magnetic charges, a reverse magnetic field in the -Y direction is generated in the free layer 234. The closer the intensity of the reverse magnetic field is to the magnetic charge, the greater the intensity of the magnetic field. Therefore, the intensity of the reverse magnetic field increases in the vicinity of the first end Ed11 and the second end Ed12 of the free layer 234, and the intensity of the reverse magnetic field decreases in the central part of the free layer 234.

[0113] When no external magnetic field is applied, the magnetization direction of the free layer 234 and the direction of the magnetic moment inside the free layer 234 are oriented in a direction parallel to the X direction. When the strength of the external magnetic field is small, the direction of the magnetic moment begins to rotate toward the Y direction in the central portion of the free layer 234. However, in the vicinity of the first end Ed11 and the second end Ed12 of the free layer 234, the direction of the magnetic moment does not rotate or hardly rotates.

[0114] When the intensity of the external magnetic field reaches a certain level, the direction of the magnetic moment in the central part of the free layer 234 is consistent with or almost consistent with the Y direction. On the other hand, in the vicinity of the first end Ed11 and the second end Ed12 of the free layer 234, the direction of the magnetic moment begins to rotate toward the Y direction. When the intensity of the external magnetic field further increases, the direction of the magnetic moment in the vicinity of the first end Ed11 and the second end Ed12 of the free layer 234 is also consistent with or almost consistent with the Y direction.

[0115] Thus, in the MR element 230 of the comparative example, due to the diamagnetic field, the direction of the magnetic moment changes non-uniformly in the entire free layer 234. As a result, the magnetization of the free layer 234 changes non-linearly with respect to the change in the strength of the external magnetic field. As a result, the detection signal generated by the magnetic sensor including the MR element 230 of the comparative example changes non-linearly with respect to the change in the strength of the external magnetic field.

[0116] Next, the magnetic charge in the MR element 30 in this embodiment will be described. Fig. 9 It is an explanatory diagram for explaining the magnetic charge in the MR element 30 . Fig. 9 Indicates a cross section equivalent to the cross section S. Fig. 9 In the diagram, the “+” sign indicates positive magnetic charge and the “-” sign indicates negative magnetic charge.

[0117] In the MR element 30 of the present embodiment, the film thickness T1 at the first end Ed1 is smaller than the film thickness T2 at the second end Ed2. Here, consider the case where an external magnetic field in the Y direction is applied to the MR element 30. In this case, as in the comparative example, the positive magnetic charge is concentrated in the vicinity of the second end Ed2 in the outer peripheral surface of the free layer 34. On the other hand, the negative magnetic charge is not concentrated in the vicinity of the first end Ed1 in the outer peripheral surface of the free layer 34, but is also diffusely distributed to the first surface 34a. As a result, the difference between the intensity of the antimagnetic field in the vicinity of the first end Ed1 of the free layer 34 and the intensity of the antimagnetic field in the central part of the free layer 34 becomes smaller. As the above difference becomes smaller, the direction of the magnetic moment in the vicinity of the first end Ed1 of the free layer 34 rotates in the same direction as the direction of the magnetic moment in the central part of the free layer 34. Therefore, according to the present embodiment, it is possible to suppress the magnetization of the free layer 34 from changing nonlinearly with respect to the change in the intensity of the external magnetic field. As a result, according to the present embodiment, it is possible to expand the range in which the detection signal generated by the magnetic sensor 1 changes linearly.

[0118] Next, the results of the experiment for investigating the linearity of the detection signal are described. In the experiment, a magnetic sensor of the embodiment and a magnetic sensor of the comparative example were produced. The structures of the magnetic sensor of the embodiment and the magnetic sensor of the comparative example are basically the same as the structure of the magnetic sensor 1 involved in the present embodiment. The magnetic sensor of the embodiment has the MR element 30 (TMR element) of the aforementioned embodiment as the MR element 30. The magnetic sensor of the comparative example has the MR element 230 of the comparative example instead of the MR element 30. The MR element 230 of the comparative example is a TMR element formed on a plane parallel to the reference plane (the lower surface 60b of the support member 60) in the same method as the MR element 30 of the embodiment.

[0119] In the experiment, the changes in the detection signals (signals corresponding to the detection signals S1 or S2) generated by the magnetic sensors of the embodiment and the comparative example when the strength of the external magnetic field in the Y direction applied to the magnetic sensors was changed were investigated.

[0120] Fig.10 Here, H represents the strength of the external magnetic field applied to the magnetic sensor, and Hk represents the strength of the anisotropic magnetic field of the free layer 34, 234. Fig.10 In the figure, the horizontal axis represents H / Hk. Fig.10 In FIG. 1 , the vertical axis represents a normalized signal normalized so that the maximum value of the detection signal becomes 1. Fig.10 In FIG. 8 , the curve denoted by reference numeral 81 represents the normalized signal of the magnetic sensor of the embodiment, and the curve denoted by reference numeral 82 represents the normalized signal of the magnetic sensor of the comparative example.

[0121] like Fig.10 As shown, in the magnetic sensor of the comparative example (symbol 82), the normalized signal changes linearly when H / Hk is in the range of 0 to 0.7. On the other hand, in the magnetic sensor of the embodiment (symbol 81), the normalized signal changes linearly when H / Hk is in the range of 0 to 0.8. Fig.10 As can be understood, according to the present embodiment, it is possible to expand the range in which the detection signal generated by the magnetic sensor 1 changes linearly.

[0122] However, if Figure 8 As shown, the end face in the -Y direction and the end face in the Y direction of the MR element 230 of the comparative example are respectively inclined relative to the XY plane. In the MR element 230 of the comparative example, in order to suppress the concentration of magnetic charges in the vicinity of the first and second ends Ed11 and Ed12 in the outer peripheral surface of the free layer 234, it is considered to increase the inclination of the above-mentioned end faces. However, in general, the film thickness of the MR element is small, so the effect of increasing the inclination of each end face as described above is limited.

[0123] In addition, in the MR element 230 of the comparative example, if the inclination of each end face is increased, the following problems will occur. That is, if the inclination of each end face is increased, the area not covered by the cover layer will expand when viewed from the Z direction, and the MR element 230 may be easily corroded and oxidized. In addition, the free layer 234 may be composed of a stacked film composed of multiple layers. As described above, if the inclination of each end face is increased, the area of ​​the layer close to the cover layer in the stacked film will decrease, and the characteristics may change at the end of the free layer 234. In addition, when a plurality of MR elements 230 are formed, if the inclination of each cross section is increased without changing the shape of the resist mask, the width of the inclined portion of the MR element 230 will increase, and as a result, the interval between two adjacent MR elements 230 will decrease. In order to reduce the risk of electrical connection between two adjacent MR elements 230, it is necessary to increase the interval between the MR elements 230. However, when the interval between two adjacent MR elements 230 is increased, the integration density of the plurality of MR elements 230 will decrease, and the S / N ratio will decrease.

[0124] In contrast, in the present embodiment, as described above, the concentration of magnetic charges in the vicinity of the first end Ed1 in the outer peripheral surface of the free layer 34 can be suppressed without increasing the inclination of the end face in the -Y direction and the end face in the Y direction of the MR element 30. That is, according to the present embodiment, the problem caused by increasing the inclination of the above-mentioned end faces of the MR element 30 can be prevented, and the concentration of magnetic charges can be suppressed.

[0125] In addition, in the present embodiment, by forming the MR element 30 so that at least a part of the MR element 30 is disposed on the curved surface portion 60 a 2 of the opposing surface 60 a , it is possible to easily suppress the concentration of magnetic charge.

[0126] It should be noted that, in the present embodiment, an example in which the MR element 30 is arranged on the curved surface portion 60a2 is described. However, the MR element 30 may also be arranged on an inclined portion as described below. The inclined portion is composed of a plurality of planes. The plane closest to the lower surface 60b of the support member 60 among the plurality of planes is referred to as the first plane, and the plane farthest from the lower surface 60b of the support member 60 is referred to as the second plane. The MR element 30 is arranged from the first plane to the second plane. The angle formed by the first plane relative to the lower surface 60b of the support member 60 is greater than the angle formed by the plurality of planes other than the first plane relative to the lower surface 60b of the support member 60. The angle formed by the second plane relative to the lower surface 60b of the support member 60 is smaller than the angle formed by the plurality of planes other than the second plane relative to the lower surface 60b of the support member 60.

[0127] In this embodiment, the MR element 30 is entirely disposed on the first inclined surface SL1 or the second inclined surface SL2 of the curved surface portion 60a2. However, as described later in the second embodiment, the MR element 30 may be disposed from the first inclined surface SL1 to the second inclined surface SL2.

[0128] In addition, in the present embodiment, an example is described in which both the first end Ed1 and the second end Ed2 are located above the first inclined surface SL1, or both the first end Ed1 and the second end Ed2 are located above the second inclined surface SL2. However, in the case where one of the first end Ed1 and the second end Ed2 is located above the first inclined surface SL1 or the second inclined surface SL2, the other may be located above the plane portion 60a1 or above the boundary between the first inclined surface SL1 and the second inclined surface SL2.

[0129] [Modifications]

[0130] Next, a modification of this embodiment will be described. Fig.11 , a first modification of the MR element 30 is described. In the first modification, the MR element 30 is an AMR (anisotropic magnetoresistance) element. In the first modification, the MR element 30 includes a magnetic layer 36 having a set magnetic anisotropy instead of Figure 6 The magnetic fixed layer 32, the spacer layer 33 and the free layer 34 are shown. The magnetic layer 36 has magnetization whose direction changes according to the direction of the external magnetic field. As described above, the MR element 30 is patterned into a shape that is long in the X direction. As a result, the magnetic layer 36 has a shape magnetic anisotropy in which the easy magnetization axis direction is parallel to the X direction.

[0131] The magnetic layer 36 has a first surface 36a that is long in the X direction, a second surface 36b that is opposite to the first surface 36a, and an outer peripheral surface connecting the first surface 36a and the second surface 36b. Figure 6 and Figure 7 The description of the shape of the MR element 30 described above also applies to the first modification. If the free layer 34, the first surface 34a, and the second surface 34b in the description of the shape of the MR element 30 are replaced by the magnetic layer 36, the first surface 36a, and the second surface 36b, respectively, the description becomes the shape of the first modification.

[0132] Next, refer to Fig.12A second variation of the MR element 30 is described. In the second variation, the planar shape of the MR element 30 is an oblong. The MR element 30 includes: a constant width portion 30B; a first variable width portion 30A located in front of the constant width portion 30B in the -X direction; and a second variable width portion 30C located in front of the constant width portion 30B in the X direction. Fig.12 In FIG. 1 , a boundary between the constant width portion 30B and the first variable width portion 30A, and a boundary between the constant width portion 30B and the second variable width portion 30C are indicated by dotted lines, respectively.

[0133] The width (dimension in the direction parallel to the Y direction) of the constant width portion 30B is constant regardless of the position in the X direction. The width of the first varying width portion 30A decreases as it moves away from the constant width portion 30B. The width of the second varying width portion 30C decreases as it moves away from the constant width portion 30B.

[0134] The first and second width variation portions 30A and 30C are provided, for example, to control the magnetic domain structure of the free layer 34. In the first and second width variation portions 30A and 30C, the difference between the film thickness T2 at the second end Ed2 and the film thickness T1 at the first end Ed1 decreases as the distance from the constant width portion 30B increases. Therefore, the effect of suppressing the concentration of magnetic charges decreases in the vicinity of the end in the -X direction of the MR element 30 and the vicinity of the end in the X direction of the MR element 30. However, in the portion other than the above-mentioned portion, the difference between the film thickness T2 and the film thickness T1 becomes sufficiently large, and the effect of suppressing the concentration of magnetic charges can be obtained.

[0135] Next, refer to Figures 13 to 15 , a third modification example of the MR element 30 is described. Figures 13 to 15 The MR element 30 shown is a CIP (Current In-Plane) type MR element. Fig.13 It is an explanatory diagram for explaining a third modified example of the MR element 30 . Fig.14 Yes means Fig.13 A cross-sectional view of the cross section at the position indicated by line 14-14. Fig.15 Yes means Fig.13 It should be noted that in Fig.14 as well as Fig.15 In FIG. 1 , for convenience, only the MR element 30 and the support member 60 are shown.

[0136] Here, the MR element 30 includes a base layer 31, a magnetization fixed layer 32, a spacer layer 33, a free layer 34, and a cap layer 35 (see Figure 6) is represented by symbol 30M. In the third modified example, the dimension of the laminated film 30M in the direction parallel to the X direction is larger than the dimension of the curved surface portion 60a2 of the opposite surface 60a of the support member 60 in the direction parallel to the X direction. A portion of the laminated film 30M is arranged on the curved surface portion 60a2. Another portion of the laminated film 30M is arranged on the flat surface portion 60a1 of the opposite surface 60a at the front end in the -X direction of the curved surface portion 60a2. Another portion of the laminated film 30M is arranged on the flat surface portion 60a1 of the opposite surface 60a at the front end in the X direction of the curved surface portion 60a2. Hereinafter, the portion of the laminated film 30M arranged on the curved surface portion 60a2 is referred to as the curved surface arrangement portion 30M1, and the portion of the laminated film 30M arranged on the flat surface portion 60a1 is referred to as the flat surface arrangement portion 30M2.

[0137] In the third modification, the MR element 30 further includes a non-magnetic metal film 30N. Fig.13 and Fig.15 As shown, the non-magnetic metal film 30N covers the planar configuration portion 30M2. Fig.13 and Fig.15 As shown, the non-magnetic metal film 30N does not cover most of the curved surface configuration portion 30M1.

[0138] The plane configuration portion 30M2 is substantially the same as Figure 8 The third modification is the same as the MR element 230 of the comparative example shown. Therefore, in this portion, the effect of suppressing the concentration of magnetic charges cannot be obtained. On the other hand, in the curved surface configuration portion 30M1, the effect of suppressing the concentration of magnetic charges can be obtained. In the third modification, by covering the flat configuration portion 30M2 with the non-magnetic metal film 30N, it is possible to detect a signal corresponding to the resistance value of the curved surface configuration portion 30M1 only from the MR element 30. That is, in the third modification, it is possible to essentially make only the curved surface configuration portion 30M1 function as the MR element 30. Thus, the effect of suppressing the concentration of magnetic charges can be obtained.

[0139] It should be noted that in the third modification, when the planar arrangement portion 30M2 is sufficiently smaller than the curved surface arrangement portion 30M1 , the non-magnetic metal film 30N may not be provided.

[0140] [Second embodiment]

[0141] Next, a second embodiment of the present invention will be described. Fig.16 as well as Fig.17 , the structure of the magnetic sensor involved in this embodiment is described. Fig.16 It is a schematic diagram showing a part of the magnetic sensor according to the present embodiment. Fig.17 It is a cross-sectional view showing a part of the magnetic sensor according to the present embodiment.

[0142] The structure of the magnetic sensor 101 according to the present embodiment is the same as that of the magnetic sensor 1 according to the first embodiment except for the MR element. The magnetic sensor 101 according to the present embodiment includes an MR element 130 instead of the MR element 30 in the first embodiment. Fig.17 1 shows a cross section which is parallel to the YZ plane and intersects the MR element 130 .

[0143] The MR element 130 is disposed on the curved surface portion 60a2 of the opposing surface 60a of the support member 60. In this embodiment, the MR element 130 is disposed from the first inclined surface SL1 to the second inclined surface SL2. The MR element 130 has a shape that is long in the X direction. The planar shape of the MR element 130 is a rectangle.

[0144] The MR element 130 may be a spin valve type MR element or an AMR element. The following description will be made by taking the case where the MR element 130 is a spin valve type MR element as an example. Figure 6 The MR element 30 shown in the figure similarly includes a base layer 31, a magnetization fixed layer 32, a spacer layer 33, a free layer 34, and a cap layer 35. In this embodiment, for convenience, the magnetization direction of the magnetization fixed layer 32 is set to the Y direction or the -Y direction. The free layer 34 has a shape magnetic anisotropy in which the easy magnetization axis direction is parallel to the X direction.

[0145] Next, refer to Fig.18 , the MR element 130 will be described in detail. Fig.18 It is an explanatory diagram for explaining the shape of the free layer 34 . Fig.18 Yes Fig.17 It should be noted that in Fig.18 In FIG. 1 , the base layer 31 and the cover layer 35 in the MR element 130 are omitted.

[0146] As described in the first embodiment, the free layer 34 has a first surface 34a, a second surface 34b, and an outer peripheral surface, and the first surface 34a has a first end Ed1 and a second end Ed2 located at both ends of the short side direction of the first surface 34a. In this embodiment, the first end Ed1 is arranged on the first inclined surface SL1 of the curved surface portion 60a2, and the second end Ed2 is arranged on the second inclined surface SL2 of the curved surface portion 60a2. The distance from the lower surface 60b of the support member 60 to the first end Ed1 and the distance from the lower surface 60b of the support member 60 to the second end Ed2 may be equal to each other or different from each other.

[0147] In any cross section S that intersects the free layer 34 and is perpendicular to the long side direction of the first surface 34a (the direction parallel to the X direction), the inclination angle θ1 at the first end Ed1 and the inclination angle θ2 at the second end Ed2 are both greater than the inclination angle θp at the prescribed point P. In addition, in the present embodiment, the point on the first surface 34a where the inclination angle θ is the smallest is taken as the prescribed point P. In the present embodiment, the inclination angle θ at the prescribed point P is particularly 0. In any cross section S, the inclination angle θ increases as it approaches the first end Ed1 from the prescribed point P, and increases as it approaches the second end Ed2 from the prescribed point P.

[0148] In addition, in any cross section S, the film thickness T1 at the first end Ed1 and the film thickness T2 at the second end Ed2 are both smaller than the film thickness Tp at the predetermined point P. In addition, in any cross section S, the film thickness T decreases as it approaches the first end Ed1 from the predetermined point P, and decreases as it approaches the second end Ed2 from the predetermined point P.

[0149] Here, as in the first embodiment, the symbols represents the angle formed by the opposing surface 60a with respect to the reference plane (the lower surface 60b of the support member 60) in any cross section S. In the present embodiment, the angle at the position on the opposing surface 60a closest to the second end Ed2 is The angle at the position on the opposite surface 60a closest to the predetermined point P is big. angle It increases as it moves from the position on the opposite surface 60a closest to the prescribed point P to the position on the opposite surface 60a closest to the first end Ed1, and increases as it moves from the position on the opposite surface closest to the prescribed point P to the position on the opposite surface 60a closest to the second end Ed2.

[0150] In this embodiment, compared with the first embodiment in which the second end Ed2 is located near the top of the curved surface portion 60a2, the film thickness T2 at the second end Ed2 is reduced. Thus, according to this embodiment, the concentration of magnetic charges in the vicinity of the second end Ed2 in the outer peripheral surface of the free layer 34 can be suppressed. Thus, according to this embodiment, the magnetization of the free layer 34 can be more effectively suppressed from changing nonlinearly with respect to the change in the intensity of the external magnetic field. As a result, according to this embodiment, the range in which the detection signal generated by the magnetic sensor 101 changes linearly can be further expanded.

[0151] The other structures, functions and effects of this embodiment are the same as those of the first embodiment.

[0152] [Third Embodiment]

[0153] Next, a third embodiment of the present invention will be described. Fig.19 , the structure of the magnetic sensor involved in this embodiment is described. Fig.19 It is a cross-sectional view showing a part of the magnetic sensor according to the present embodiment.

[0154] The structure of the magnetic sensor 301 according to the present embodiment is different from that of the magnetic sensor 1 according to the first embodiment in the following points: The magnetic sensor 301 according to the present embodiment includes an MR element 330 instead of the MR element 30 in the first embodiment. Fig.19 1 shows a cross section which is parallel to the YZ plane and intersects the MR element 330 .

[0155] The opposing surface 60a of the support member 60 includes at least one curved surface portion 60a3 which is not parallel to the lower surface 60b of the support member 60, instead of the curved surface portion 60a2 in the first embodiment. Fig.19 As shown in FIG. 1 , the curved surface portion 60a3 is a concave surface that is concave in a direction approaching the lower surface 60b. The curved surface portion 60a3 has a curved shape (arch shape) that is curved so as to be concave in a direction approaching the lower surface 60b (-Z direction) in any cross section parallel to the YZ plane. In any cross section parallel to the YZ plane, the distance from the lower surface 60b to the curved surface portion 60a3 becomes the smallest at the center of the curved surface portion 60a3 in a direction parallel to the Y direction (hereinafter, simply referred to as the center of the curved surface portion 60a3).

[0156] At least one curved surface portion 60a3 extends along the X direction. The overall shape of at least one curved surface portion 60a3 is such that Fig.19 The curve shape shown is a semi-cylindrical curved surface moving along the X direction. In addition, the insulating layer 62 of the support member 60 has a cross-sectional shape in which a curved surface portion 60a3 is formed on the opposing surface 60a. Specifically, the insulating layer 62 has a cross-sectional shape that is concave in the -Z direction in any cross section parallel to the YZ plane.

[0157] Here, the portion of the curved surface portion 60a3 from the end portion located at the end of the curved surface portion 60a3 in the Y direction to the center of the curved surface portion 60a3 is called a first inclined surface and is represented by the symbol SL11. In addition, the portion of the curved surface portion 60a3 from the end portion located at the end of the curved surface portion 60a3 in the -Y direction to the center of the curved surface portion 60a3 is called a second inclined surface and is represented by the symbol SL12. The first and second inclined surfaces SL11 and SL12 are both inclined relative to the reference plane, that is, the lower surface 60b. In the present embodiment, the entire MR element 330 is configured on the first inclined surface SL11 or the second inclined surface SL12. Fig.19 , the MR element 330 arranged on the first slanted surface SL11 is shown.

[0158] The MR element 330 has a shape that is long in the X direction. The planar shape of the MR element 330 is a rectangle.

[0159] The MR element 330 may be a spin valve type MR element or an AMR element. The following description will be made by taking the case where the MR element 330 is a spin valve type MR element as an example. Figure 6 The MR element 30 shown also includes a base layer 31, a magnetization fixed layer 32, a spacer layer 33, a free layer 34, and a cap layer 35. The free layer 34 has shape magnetic anisotropy in which the easy magnetization axis direction is parallel to the X direction.

[0160] Next, refer to Fig. 20 , the MR element 330 is described in detail. Fig. 20 It is an explanatory diagram for explaining the shape of the free layer 34 . Fig. 20 Yes Fig.19 It should be noted that in Fig. 20 In the figure, the base layer 31 and the cover layer 35 in the MR element 330 are omitted.

[0161] As described in the first embodiment, the free layer 34 has a first surface 34a, a second surface 34b, and an outer peripheral surface, and the first surface 34a has a first end Ed1 and a second end Ed2 located at both ends of the short side direction of the first surface 34a. In this embodiment, both the first end Ed1 and the second end Ed2 are located above the first inclined surface SL11 of the curved surface portion 60a3, or both the first end Ed1 and the second end Ed2 are located above the second inclined surface SL12 of the curved surface portion 60a3. The distance from the lower surface 60b of the support member 60 to the first end Ed1 is greater than the distance from the lower surface 60b of the support member 60 to the second end Ed2.

[0162] The relationship between the inclination angle θ1 at the first end Ed1, the inclination angle θ2 at the second end Ed2, and the inclination angle θp at the specified point P in any cross section S that intersects the free layer 34 and is perpendicular to the long side direction of the first surface 34a (the direction parallel to the X direction) is the same as that in the first embodiment. In addition, the relationship between the film thickness T1 at the first end Ed1, the film thickness T2 at the second end Ed2, and the film thickness Tp at the specified point P in any cross section S is the same as that in the first embodiment. It should be noted that, regarding the film thickness T1, for convenience, it is assumed that the second surface 34b is extended along the curved surface portion 60a3 to be set as an imaginary surface, and the interval between the first surface 34a and the imaginary surface in the direction perpendicular to the first surface 34a is set as the film thickness T1.

[0163] It should be noted that the MR element 330 may be arranged from the first inclined surface SL11 to the second inclined surface SL12 similarly to the MR element 130 in the second embodiment. Other structures, functions, and effects in this embodiment are the same as those in the first or second embodiment.

[0164] It should be noted that the present invention is not limited to the above-described embodiments, and various modifications are possible. For example, the number and arrangement of MR elements and the number and arrangement of curved surface portions are not limited to the examples shown in the embodiments, but are arbitrary as long as the requirements of the claims are met.

[0165] In addition, the MR element of the present invention can be arranged on a plane parallel to the reference plane as long as the necessary condition that the film thickness T1 at the first end Ed1 is smaller than the film thickness Tp at a predetermined point P is satisfied at least in any cross section S. The MR element including the free layer 34 having such a film thickness T can be realized by, for example, a so-called wedge-forming film capable of forming an inclined film thickness.

[0166] Various modes and modifications are apparent from the above description, and therefore, within the scope of the equivalents of the claims, the present invention may be practiced in modes other than the best mode described above.

Claims

1. A magnetic sensor, characterized in that: A magnetic sensor comprising a magnetoresistance effect element whose resistance value changes according to an external magnetic field and a support member for supporting the magnetoresistance effect element. The magnetoresistance effect element includes a magnetic layer having a magnetization whose direction can be changed according to the external magnetic field, The magnetic layer has a first surface that is long in one direction and a second surface that is arranged on the opposite side of the first surface, and has a film thickness that is a dimension in a direction perpendicular to the first surface of the magnetic layer. The first surface has a first end portion and a second end portion located at both ends of the short side direction of the first surface. In any cross section intersecting the magnetic layer and perpendicular to the long side direction of the first surface, the film thickness at the first end is smaller than the film thickness at a predetermined point on the first surface between the first end and the second end. The supporting member has an opposing surface facing the magnetoresistance effect element and a lower surface located on the opposite side to the opposing surface. The lower surface corresponds to a reference plane, The opposing surface includes a planar portion parallel to the reference plane and a curved portion not parallel to the reference plane. The curved surface portion has a third end portion located at an end in a first direction orthogonal to the longitudinal direction of the first surface, and a fourth end portion located at an end in a second direction opposite to the first direction. The third end of the curved surface portion and the fourth end of the curved surface portion are both connected to the planar portion, In the arbitrary cross section intersecting the magnetic layer and perpendicular to the long side direction of the first surface, the curved surface portion has a curved shape that is bent as a whole, At least a portion of the magnetoresistive effect element is disposed on the curved surface portion.

2. The magnetic sensor according to claim 1, characterized in that In the arbitrary cross section, the film thickness at the second end portion is greater than the film thickness at the predetermined point.

3. The magnetic sensor according to claim 2, characterized in that In the arbitrary cross section, the film thickness decreases as it approaches the first end from the second end.

4. The magnetic sensor according to claim 1, characterized in that In the arbitrary cross section, the film thickness at the second end portion is smaller than the film thickness at the predetermined point.

5. The magnetic sensor according to claim 4, characterized in that In the arbitrary cross section, the film thickness decreases as it approaches the first end from the predetermined point, and decreases as it approaches the second end from the predetermined point.

6. The magnetic sensor according to claim 1, characterized in that The film thickness at an arbitrary position on the first surface decreases as the angle formed by the opposing surface with respect to the reference plane at a position on the opposing surface closest to the arbitrary position increases.

7. The magnetic sensor according to claim 1, characterized in that: At least one of the first end portion and the second end portion is located above the curved surface portion.

8. A magnetic sensor, characterized in that: A magnetic sensor comprising a magnetoresistance effect element whose resistance value changes according to an external magnetic field and a support member for supporting the magnetoresistance effect element. The supporting member has an opposing surface opposing the magnetoresistance effect element and a lower surface located on the opposite side to the opposing surface. The lower surface corresponds to a reference plane, The magnetoresistance effect element includes a magnetic layer having a magnetization whose direction can be changed according to the external magnetic field, The magnetic layer has a first surface that is long in one direction and a second surface that is located on the opposite side to the first surface. The first surface has first end portions located at both ends of the short side direction of the first surface and second end portions located at both ends of the short side direction of the first surface. At least a portion of the first surface is inclined relative to the reference plane in such a manner that an inclination angle, which is an angle formed by the first surface relative to the reference plane, is greater than 0. In any cross section intersecting the magnetic layer and perpendicular to the long side direction of the first surface, the inclination angle at the first end is larger than the inclination angle at a predetermined point on the first surface between the first end and the second end. The opposing surface includes a planar portion parallel to the reference plane and a curved portion not parallel to the reference plane. The curved surface portion has a third end portion located at an end in a first direction orthogonal to the long side direction of the first surface, and a fourth end portion located at an end in a second direction opposite to the first direction. The third end of the curved surface portion and the fourth end of the curved surface portion are both connected to the planar portion, In the arbitrary cross section intersecting the magnetic layer and perpendicular to the long side direction of the first surface, the curved surface portion has a curved shape that is bent as a whole, At least a portion of the magnetoresistive element is disposed on the curved surface portion. The magnetic layer has a film thickness which is a dimension in a direction perpendicular to the first surface of the magnetic layer. In the arbitrary cross section intersecting the magnetic layer and perpendicular to the longitudinal direction of the first surface, the film thickness of the magnetic layer at the first end portion is smaller than the film thickness of the magnetic layer at the predetermined point on the first surface.

9. The magnetic sensor according to claim 8, characterized in that In the arbitrary cross section, the inclination angle at the second end portion is smaller than the inclination angle at the predetermined point.

10. The magnetic sensor according to claim 9, characterized in that In the arbitrary cross section, the inclination angle increases as it approaches the first end from the second end.

11. The magnetic sensor according to claim 8, characterized in that In the arbitrary cross section, the inclination angle at the second end portion is larger than the inclination angle at the predetermined point.

12. The magnetic sensor according to claim 11, characterized in that In the arbitrary cross section, the inclination angle increases as it approaches the first end from the predetermined point, and increases as it approaches the second end from the predetermined point.

13. The magnetic sensor according to claim 8, characterized in that The film thickness of the magnetic layer decreases as the inclination angle increases.

14. The magnetic sensor according to claim 13, characterized in that: The film thickness at an arbitrary position on the first surface decreases as the angle formed by the opposing surface with respect to the reference plane at a position on the opposing surface closest to the arbitrary position increases.

15. The magnetic sensor according to claim 8, characterized in that At least one of the first end portion and the second end portion is located above the curved surface portion.

16. A magnetic sensor, characterized in that: A magnetic sensor comprising a magnetoresistance effect element whose resistance value changes according to an external magnetic field and a support member for supporting the magnetoresistance effect element. The magnetoresistance effect element includes a magnetic layer having a magnetization whose direction can be changed according to the external magnetic field, The magnetic layer has a first surface that is long in one direction and a second surface that is located on the opposite side to the first surface. The first surface has first end portions located at both ends of the short side direction of the first surface and second end portions located at both ends of the short side direction of the first surface. The supporting member has an opposing surface facing the magnetoresistance effect element and a lower surface located on the opposite side to the opposing surface. The lower surface corresponds to a reference plane, At least a portion of the opposing surface is inclined relative to the reference plane, In any cross section intersecting the magnetic layer and perpendicular to the long side direction of the first surface, the angle formed by the opposing surface with respect to the reference plane becomes larger at a first position on the opposing surface that is closest to the first end, compared to a position on the opposing surface that is closest to a predetermined point on the first surface between the first end and the second end. The opposing surface includes a planar portion parallel to the reference plane and a curved portion not parallel to the reference plane. The curved surface portion has a third end portion located at an end in a first direction orthogonal to the longitudinal direction of the first surface, and a fourth end portion located at an end in a second direction opposite to the first direction. The third end of the curved surface portion and the fourth end of the curved surface portion are both connected to the planar portion, In the arbitrary cross section intersecting the magnetic layer and perpendicular to the long side direction of the first surface, the curved surface portion has a curved shape that is bent as a whole, At least a portion of the magnetoresistive element is disposed on the curved surface portion. The magnetic layer has a film thickness which is a dimension in a direction perpendicular to the first surface of the magnetic layer. In the arbitrary cross section intersecting the magnetic layer and perpendicular to the longitudinal direction of the first surface, the film thickness of the magnetic layer at the first end portion is smaller than the film thickness of the magnetic layer at the predetermined point on the first surface.

17. The magnetic sensor according to claim 16, characterized in that The angle at the second position on the opposing surface that is closest to the second end portion is smaller than the angle at the position on the opposing surface that is closest to the predetermined point.

18. The magnetic sensor according to claim 17, characterized in that: The angle increases as the distance from the second position to the first position approaches.

19. The magnetic sensor according to claim 16, characterized in that: The angle at the second position on the opposing surface that is closest to the second end portion is larger than the angle at the position on the opposing surface that is closest to the predetermined point.

20. The magnetic sensor according to claim 19, characterized in that The angle increases as the position on the opposing surface closest to the prescribed point approaches the first position, and increases as the position on the opposing surface closest to the prescribed point approaches the second position.

21. The magnetic sensor according to claim 16, characterized in that The film thickness of the magnetic layer at an arbitrary position on the first surface decreases as the angle at a position on the opposing surface closest to the arbitrary position increases.

22. The magnetic sensor according to claim 16, characterized in that At least one of the first end portion and the second end portion is located above the curved surface portion.

Images