Semiconductor structure and method of forming the same
By introducing drift regions with different doping concentrations into the LDMOS structure, the breakdown voltage and on-current were optimized, solving the problem of poor electrical performance in the prior art and achieving higher breakdown voltage and on-current.
CN114823841BActive Publication Date: 2026-07-24SEMICON MFG INT (SHANGHAI) CORP +1
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SEMICON MFG INT (SHANGHAI) CORP
- Filing Date
- 2021-01-19
- Publication Date
- 2026-07-24
AI Technical Summary
Technical Problem
It is difficult to simultaneously increase the breakdown voltage and on-current of existing LDMOS devices, resulting in poor electrical performance.
Method used
In the LDMOS structure, a first drift region and a second drift region are introduced. The first drift region has a lower ion doping concentration, while the second drift region has a higher ion doping concentration than the first drift region. The breakdown voltage and on-resistance are optimized by controlling the difference in doping concentration between the drift regions.
Benefits of technology
This increases the breakdown voltage of LDMOS and also increases the conduction current, thereby improving the electrical performance of the semiconductor structure.
✦ Generated by Eureka AI based on patent content.
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Figure CN114823841B_ABST
Abstract
A semiconductor structure and a forming method thereof, the semiconductor structure comprising: a gate structure on a substrate, extending parallel to a surface of the substrate and transversely to a direction of extension of the gate structure; a drain on one side of the gate structure; a first drift region on the same side of the gate structure as the drain, a projection of the first drift region in the substrate covering a projection of the drain in the substrate; and a second drift region on an end of the gate structure close to the drain, the first drift region and the second drift region being spaced apart in the transverse direction, the second drift region having a higher ion doping concentration than the first drift region. In the embodiment, the projection of the first drift region in the substrate covers the projection of the drain in the substrate, so the first drift region bears a higher voltage drop of the drain, making the breakdown voltage of the LDMOS higher; and because the second drift region has a higher ion doping concentration than the first drift region, the on-resistance of the first drift region is smaller, making the on-current of the LDMOS larger.
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