A gallium nitride-based laser

Abstract

The present disclosure provides a gallium nitride-based laser, comprising: a substrate; a buffer layer fabricated on the upper surface of the substrate; a lower confinement layer fabricated on the upper surface of the buffer layer; In x Ga 1‑x N lower waveguide layer fabricated on the upper surface of the lower confinement layer; an active region fabricated on the upper surface of the In x Ga 1‑ x N lower waveguide layer; In x Ga 1‑x N upper waveguide layer fabricated on the upper surface of the active region; an electron blocking layer fabricated on the upper surface of the In x Ga 1‑ x N upper waveguide layer; an upper confinement layer fabricated on the upper surface of the electron blocking layer; an ohmic contact layer fabricated on the upper surface of the upper confinement layer; a P-type electrode fabricated on the upper surface of the P-type ohmic contact layer; an N-type electrode fabricated on the lower surface of the substrate; wherein, the thickness of the In x Ga 1‑x N upper waveguide layer is less than the thickness of the In x Ga 1‑x N lower waveguide layer. The gallium nitride-based laser provided by the present disclosure has an asymmetric waveguide layer structure, which can make the optical field center away from the P-type region, conducive to reducing optical loss and improving beam quality.

Description

Technical Field

[0001] The present disclosure relates to the technical field of semiconductor lasers, and particularly to a gallium nitride-based laser. Background Art

[0002] Gallium nitride-based lasers are important semiconductor optoelectronic devices and have quite extensive applications in fields such as laser display, laser communication, and laser surgery. Among them, laser display is regarded as the ultimate display technology, and chip-level semiconductor red, green, and blue lasers play an indispensable role in laser display. Relatively speaking, semiconductor lasers for red and blue light are currently relatively mature in development, while green semiconductor lasers are still in the initial stage of development. Gallium nitride-based green semiconductor lasers are very promising solutions for green lasers, but currently still face problems such as short lasing wavelengths, poor laser beam quality, and low laser slope efficiency. Specifically at the structural level of the laser, there are challenges including poor quality of the active region, substrate mode leakage, low carrier recombination efficiency, and difficulty in p-type preparation. Among these difficulties, substrate mode leakage and low carrier recombination efficiency are two main factors restricting the further development of green lasers.

[0003] Since the laser wavelength increases to the green light band, current gallium nitride lasers usually need to increase the thickness of the waveguide layer and the confinement layer in order to improve the optical confinement factor and achieve effective confinement of the optical field. However, due to the large lattice mismatch between GaN and InGaN, a larger thickness will cause the quality of the laser active region material to decline and reduce the recombination efficiency of electrons and holes in the active region, which will lead to poor laser beam quality and low slope efficiency. Summary of the Invention

[0004] In view of the above problems, the present disclosure provides a gallium nitride-based laser.

[0005] According to a first aspect of the present disclosure, there is provided a gallium nitride-based laser, comprising:

[0006] A substrate;

[0007] A buffer layer fabricated on the upper surface of the above-mentioned substrate;

[0008] A lower confinement layer fabricated on the upper surface of the above-mentioned buffer layer;

[0009] In x Ga 1-x An N lower waveguide layer fabricated on the upper surface of the above-mentioned lower confinement layer;

[0010] An active region fabricated on the upper surface of the above-mentioned In x Ga 1-x N lower waveguide layer;

[0011] Inx Ga 1-x An upper waveguide layer made on the upper surface of the above-mentioned active region;

[0012] An electron blocking layer made on the upper surface of the above-mentioned In x Ga 1-x N upper waveguide layer;

[0013] An upper confinement layer made on the upper surface of the above-mentioned electron blocking layer;

[0014] An ohmic contact layer made on the upper surface of the above-mentioned upper confinement layer;

[0015] A P-type electrode made on the upper surface of the above-mentioned P-type ohmic contact layer;

[0016] An N-type electrode made on the lower surface of the above-mentioned substrate;

[0017] Wherein, the above-mentioned In x Ga 1-x The thickness of the N upper waveguide layer is less than that of the In x Ga 1-x N lower waveguide layer.

[0018] Optionally, the material of the above-mentioned buffer layer is N-type doped GaN material, with a doping concentration of 1×10 18 cm -3 ~1×10 19 cm -3 , and the thickness is 10~300μm.

[0019] Optionally, the material of the above-mentioned lower confinement layer is Al x Ga 1-x N material, N-type doped, with an Al component of 0.01~0.15, and a doping concentration of 1×10 18 cm -3 ~1×10 19 cm -3 , and the thickness is 0.5~2μm.

[0020] Optionally, the material of the above-mentioned In x Ga 1-x N lower waveguide layer is N-type doped In x Ga 1-x N material, with an In component of 0.05~0.15, and a doping concentration of 1×10 17 cm -3 ~5×10 17 cm -3 , and the thickness is 0.1~1μm.

[0021] Optionally, the above-mentioned active region is In x Ga 1-xMultiple quantum well structure, including 2 well layers and 3 barrier layers, with the above-mentioned well layers and barrier layers being alternately distributed;

[0022] The material of the above-mentioned well layer is In x Ga 1-x N material, N-type doped, with an In component of 0.2 to 0.35 and a doping concentration of 1×10 16 cm -3 ~1×10 17 cm -3 , and the thickness is 2 to 5 nm;

[0023] The material of the above-mentioned barrier layer is In x Ga 1-x N material, N-type doped, with an In component of 0 to 0.05 and a doping concentration of 1×10 17 cm -3 ~5×10 17 cm -3 , and the thickness is 3 to 20 nm;

[0024] The thicknesses of the 2 barrier layers close to the above-mentioned In x Ga 1-x N upper waveguide layer are the same, and the thickness of the barrier layer of the In x Ga 1-x N lower waveguide layer is less than the thicknesses of the 2 barrier layers close to the above-mentioned In x Ga 1-x N upper waveguide layer.

[0025] Optionally, the material of the above-mentioned In x Ga 1-x N upper waveguide layer is N-type doped In x Ga 1-x N material, with an In component of 0.02 to 0.10 and a doping concentration of 1×10 17 cm -3 ~5×10 17 cm -3 , and the thickness is 0.1 to 1 μm.

[0026] Optionally, the In component in the above-mentioned In x Ga 1-x N upper waveguide layer is less than the In component in the above-mentioned In x Ga 1-x N lower waveguide layer.

[0027] Optionally, the material of the above-mentioned electron blocking layer is Al x Ga 1-x N material, P-type doped, with an Al component of 0.1 to 0.25 and a doping concentration of 5×10 19 cm -3 ~2×1020 cm -3 , with a thickness of 5 - 30 nm.

[0028] Optionally, the material of the upper confinement layer is Al x Ga 1-x N material, P - type doped, with the Al component being 0.01 - 0.15 and the doping concentration being 1×10 19 cm -3 ~5×10 19 cm -3 , with a thickness of 0.5 - 2 μm;

[0029] The width of the upper confinement layer is less than the width of the electron blocking layer.

[0030] Optionally, the material of the ohmic contact layer is GaN material, P - type doped, with the doping concentration being 1×10 20 cm -3 ~5×10 20 cm -3 , with a thickness of 20 - 100 nm.

[0031] The present disclosure provides a gallium nitride - based laser, comprising: a substrate; a buffer layer fabricated on the upper surface of the substrate; a lower confinement layer fabricated on the upper surface of the buffer layer; an In x Ga 1-x N lower waveguide layer fabricated on the upper surface of the lower confinement layer; an active region fabricated on the upper surface of the In x Ga 1-x N lower waveguide layer; an In x Ga 1-x N upper waveguide layer fabricated on the upper surface of the active region; an electron blocking layer fabricated on the upper surface of the In x Ga 1-x N upper waveguide layer; an upper confinement layer fabricated on the upper surface of the electron blocking layer; an ohmic contact layer fabricated on the upper surface of the upper confinement layer; a P - type electrode fabricated on the upper surface of the P - type ohmic contact layer; an N - type electrode fabricated on the lower surface of the substrate; wherein, the thickness of the In x Ga 1-x N upper waveguide layer is less than the thickness of the In x Ga 1-x N lower waveguide layer. The gallium nitride - based laser provided by the present disclosure has an asymmetric waveguide layer structure, which can make the optical field center away from the P - type region, is beneficial to reducing optical loss and improving beam quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] To more clearly illustrate the technical solutions in the embodiments of the present disclosure or the prior art, the following will briefly introduce the accompanying drawings required for the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only some embodiments of the present disclosure. For those skilled in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0033] Figure 1 Schematically shows a structural diagram of a gallium nitride-based laser provided by an embodiment of the present disclosure; and

[0034] Figure 2 Schematically shows a structural diagram of an active region of a gallium nitride-based laser provided by an embodiment of the present disclosure.

[0035] Explanation of reference numerals:

[0036] 1 Substrate; 2 Buffer layer; 3 Lower confinement layer; 4 In x Ga 1-x N lower waveguide layer; 5 Active region; 6 In x Ga 1-x N upper waveguide layer; 7 Electron blocking layer; 8 Upper confinement layer; 9 Ohmic contact layer; 10 P-type electrode; 11 N-type electrode; 51 Barrier layer; 52 Well layer. Detailed implementation manners

[0037] Hereinafter, the embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are only exemplary and are not intended to limit the scope of the present disclosure. In the following detailed description, for the sake of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present disclosure. However, obviously, one or more embodiments can also be implemented without these specific details. In addition, in the following description, the descriptions of well-known structures and technologies are omitted to avoid unnecessarily confusing the concepts of the present disclosure.

[0038] The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. The terms "including", "comprising", etc. used herein indicate the presence of the described features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0039] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification and should not be interpreted in an idealized or overly rigid manner.

[0040] In cases where expressions such as "at least one of A, B, and C, etc." are used, generally, it should be interpreted according to the meaning that those skilled in the art usually understand such expressions (for example, "a system having at least one of A, B, and C" should include, but not be limited to, a system having only A, only B, only C, having A and B, having A and C, having B and C, and / or having A, B, and C, etc.). In cases where expressions such as "at least one of A, B, or C, etc." are used, generally, it should be interpreted according to the meaning that those skilled in the art usually understand such expressions (for example, "a system having at least one of A, B, or C" should include, but not be limited to, a system having only A, only B, only C, having A and B, having A and C, having B and C, and / or having A, B, and C, etc.). Those skilled in the art should also understand that substantially any disjunctive conjunction and / or phrase representing two or more alternative items, whether in the specification, claims, or drawings, should be understood as giving the possibility of including one of these items, either side of these items, or both items. For example, the phrase "A or B" should be understood as including the possibility of "A" or "B", or "A and B".

[0041] The present disclosure provides a gallium nitride-based laser, comprising: a substrate; a buffer layer fabricated on the upper surface of the substrate; a lower confinement layer fabricated on the upper surface of the buffer layer; In x Ga 1-x N lower waveguide layer fabricated on the upper surface of the lower confinement layer; an active region fabricated on the upper surface of the In x Ga 1-x N lower waveguide layer; In x Ga 1-x N upper waveguide layer fabricated on the upper surface of the active region; an electron blocking layer fabricated on the upper surface of the In x Ga 1-x N upper waveguide layer; an upper confinement layer fabricated on the upper surface of the electron blocking layer; an ohmic contact layer fabricated on the upper surface of the upper confinement layer; a P-type electrode fabricated on the upper surface of the P-type ohmic contact layer; an N-type electrode fabricated on the lower surface of the substrate; wherein, the thickness of the In x Ga 1-x N upper waveguide layer is less than the thickness of the In x Ga 1-x N lower waveguide layer. The gallium nitride-based laser provided by the present disclosure has an asymmetric waveguide layer structure, which can make the optical field center of the laser away from the P-type electrode region, facilitating reducing the optical loss of the laser and improving the beam quality.

[0042] Figure 1 Schematically shows a structural diagram of a gallium nitride-based laser provided by an embodiment of the present disclosure. Figure 2Schematically shows a schematic diagram of the active region of a gallium nitride-based laser provided by an embodiment of the present disclosure.

[0043] It should be understood that Figure 1 and Figure 2 the gallium nitride-based lasers shown in are only exemplary to facilitate those skilled in the art to understand the solutions of the present disclosure, and are not intended to limit the protection scope of the present disclosure. In some other embodiments, the materials, dimensions, shapes, etc. of each layer in the above gallium nitride-based lasers can be selected according to actual situations and are not limited herein.

[0044] Please refer to Figure 1 and Figure 2 simultaneously. In an embodiment of the present disclosure, the above gallium nitride-based laser includes: a substrate 1; a buffer layer 2 fabricated on the upper surface of the substrate 1; a lower confinement layer 3 fabricated on the upper surface of the buffer layer 2; an In x Ga 1-x N lower waveguide layer 4 fabricated on the upper surface of the lower confinement layer 3; an active region 5 fabricated on the upper surface of the In x Ga 1-x N lower waveguide layer 4; an In x Ga 1-x N upper waveguide layer 6 fabricated on the upper surface of the active region 5; an electron blocking layer 7 fabricated on the upper surface of the In x Ga 1-x N upper waveguide layer 6; an upper confinement layer 8 fabricated on the upper surface of the electron blocking layer 7; an ohmic contact layer 9 fabricated on the upper surface of the upper confinement layer 8; a P-type electrode 10 fabricated on the P-type ohmic contact layer 9; an N-type electrode 11 fabricated on the lower surface of the substrate 1; wherein, the thickness of the In x Ga 1-x N upper waveguide layer 6 is less than the thickness of the In x Ga 1-x N lower waveguide layer 4.

[0045] In this embodiment, a buffer layer 2, a lower confinement layer 3, an In x Ga 1-x N lower waveguide layer 4, an active region 5, an In x Ga 1-x N upper waveguide layer 6, an electron blocking layer 7, an upper confinement layer 8, an ohmic contact layer 9 and a P-type electrode 10 are successively fabricated on the upper surface of the substrate 1, and an N-type electrode 11 is fabricated on the lower surface of the substrate 1. In this embodiment, the material of the substrate 1 is N-type doped GaN material with a doping concentration of 3×10 18 cm -3 ^(-3), the material of the lower confinement layer 3 is Al x Ga 1-x N material, N-type doped, the Al component is 0.01 to 0.15, and the doping concentration is 1×1018 cm -3 ~1×10 19 cm -3 , with a thickness of 0.5 - 2 μm, the material of the electron blocking layer 7 is Al x Ga 1-x N material, P-type doping, Al component is 0.1 - 0.25, doping concentration is 5×10 19 cm -3 ~2×10 20 cm -3 , with a thickness of 5 - 30 nm, the material of the upper confinement layer 8 is Al x Ga 1-x N material, P-type doping, Al component is 0.01 - 0.15, doping concentration is 1×10 19 cm -3 ~5×10 19 cm -3 , with a thickness of 0.5 - 2 μm, the material of the ohmic contact layer 9 is GaN material, P-type doping, doping concentration is 1×10 20 cm -3 ~5×10 20 cm -3 , with a thickness of 20 - 100 nm. Among them, the thickness of the In x Ga 1-x N upper waveguide layer 6 is less than the thickness of the In x Ga 1-x N lower waveguide layer 4. The gallium nitride-based laser in this embodiment has an asymmetric waveguide layer structure, which can make the optical field center of the laser away from the P-type electrode region, is beneficial to reducing the optical loss of the laser, and improving the beam quality.

[0046] In an embodiment of the present disclosure, the material of the buffer layer 2 is N-type doped GaN material, and the doping concentration is 1×10 18 cm -3 ~1×10 19 cm -3 , with a thickness of 10 - 300 μm.

[0047] In this embodiment, the material of the buffer layer 2 can be selected as N-type doped GaN material, and the doping concentration is 1×10 18 cm -3 ~1×10 19 cm -3 , with a thickness of 10 - 300 μm. The material of the substrate 1 can also be selected as N-type doped GaN material, and the doping concentration is 3×10 18 cm -3 , and the total thickness of the substrate 1 and the buffer layer 2 can also be controlled to be 150 μm.

[0048] In an embodiment of the present disclosure, In x Ga 1-x The material of the lower waveguide layer 4 of N is N-type doped In x Ga 1-x N material, the In component is 0.05 to 0.15, and the doping concentration is 1×10 17 cm -3 ~5×10 17 cm -3 , and the thickness is 0.1 to 1 μm. In x Ga 1-x The material of the upper waveguide layer 6 of N is N-type doped In x Ga 1-x N material, the In component is 0.02 to 0.10, and the doping concentration is 1×10 17 cm -3 ~5×10 17 cm -3 , and the thickness is 0.1 to 1 μm.

[0049] In this embodiment, In x Ga 1-x The lower waveguide layer 4 of N and In x Ga 1-x The upper waveguide layer 6 of N have the same material, both are N-type doped In x Ga 1-x N material, 1 and the doping concentrations are both 1×10 17 cm -3 ~5×10 17 cm -3 , wherein, In x Ga 1-x The In component of the lower waveguide layer 4 of N is 0.05 to 0.15, In x Ga 1-x The In component of the upper waveguide layer 6 of N is 0.02 to 0.10.

[0050] In an embodiment of the present disclosure, In x Ga 1-x The In component in the upper waveguide layer 6 of N is less than the In component in the lower waveguide layer 4.

[0051] In this embodiment, In x Ga 1-x The In component in the upper waveguide layer 6 of N is less than the In component in the lower waveguide layer 4, making the gallium nitride-based laser have an asymmetric waveguide layer structure, which can make the optical field center of the laser away from the P-type electrode region, conducive to reducing the optical loss of the laser and improving the beam quality.

[0052] Please refer to Figure 2 , in an embodiment of the present disclosure, the active region 5 is Inx Ga 1-x The InGaN multi - quantum well structure includes 2 well layers 52 and 3 barrier layers 51, and the well layers 52 and the barrier layers 51 are alternately distributed; the material of the well layer 52 is In x Ga 1-x N material, N - type doped, with an In component of 0.2 - 0.35 and a doping concentration of 1×10 16 cm -3 ~1×10 17 cm -3 . The thickness is 2 - 5 nm; the material of the barrier layer 51 is In x Ga 1-x N material, N - type doped, with an In component of 0 - 0.05 and a doping concentration of 1×10 17 cm -3 ~5×10 17 cm -3 . The thickness is 3 - 20 nm; the thicknesses of the 2 barrier layers 51 of the InGaN upper waveguide layer 6 close to In x Ga 1-x N are the same, and the thickness of the barrier layer 51 of the InGaN lower waveguide layer 4 close to In x Ga 1-x N is less than the thickness of the 2 barrier layers 51 of the InGaN upper waveguide layer 6 close to In x Ga 1-x N.

[0053] In this embodiment, the well layers 52 and the barrier layers 51 included in the active region 5 are alternately distributed, and the materials of both the well layers 52 and the barrier layers 51 are In x Ga 1-x N material, N - type doped. The In component of the well layer 52 is 0.2 - 0.35 and the doping concentration is 1×10 16 cm -3 ~1×10 17 cm -3 . The thickness is 2 - 5 nm; the In component of the barrier layer 51 is 0 - 0.05 and the doping concentration is 1×10 17 cm -3 ~5×10 17 cm -3 . Among them, the thicknesses of the 2 barrier layers 51 of the InGaN upper waveguide layer 6 close to In x Ga 1-x N are the same (as shown in Figure 2 ), for example, 10 - 20 nm, and the thickness of the barrier layer 51 of the InGaN lower waveguide layer 4 close to In x Ga 1-x N is less than the thickness of the 2 barrier layers 51 of the InGaN upper waveguide layer 6 close to In x Ga 1-x N (as shown in Figure 2as shown, for example, near In x Ga 1-x The thickness of the barrier layer 51 of the lower waveguide layer 4 of x x Ga 1- x N can be 3 - 8 nm. The multi - quantum well structure of the active region in this embodiment is asymmetrically designed, which can reduce the electron current leakage caused by the lower quantum barrier (i.e., the barrier layer of the lower waveguide layer of x

[0054] It should be noted that the descriptions of the dimensions, materials, etc. of each layer in the gallium nitride - based laser above are only exemplary, for the convenience of those skilled in the art to understand the solution of the present disclosure, and are not intended to limit the protection scope of the present disclosure. In some other embodiments, the dimensions, materials, etc. of each layer in the above - mentioned gallium nitride - based laser can be selected according to the actual situation and are not limited herein.

[0055] In the embodiment of the present disclosure, the gallium nitride - based laser has an asymmetric waveguide layer structure, which can make the optical field center of the laser away from the P - type electrode region, conducive to reducing the optical loss of the laser and improving the beam quality.

[0056] In addition, the active region in the embodiment of the present disclosure is a multi - quantum well structure, which is asymmetrically designed, can reduce the electron current leakage caused by the lower quantum barrier, improve the carrier recombination efficiency, and thus improve the slope efficiency of the gallium nitride - based laser. And the asymmetric structure design of the multi - quantum well structure of the active region does not introduce additional structure layers, which is beneficial to improving the material quality of the gallium nitride - based laser. At the same time, the preparation process is simple and does not increase additional manufacturing costs.

[0057] Those skilled in the art can understand that the features recorded in each embodiment and / or claim of the present disclosure can be combined or combined in various ways, even if such combinations or combinations are not explicitly recorded in the present disclosure. In particular, without departing from the spirit and teachings of the present disclosure, the features recorded in each embodiment and / or claim of the present disclosure can be combined and combined in various ways. All such combinations and / or combinations fall within the scope of the present disclosure.

[0058] The embodiments of the present disclosure have been described above. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of the present disclosure. Although the present disclosure has been shown and described with reference to specific exemplary embodiments thereof, those skilled in the art should understand that various changes in form and detail may be made therein without departing from the spirit and scope of the present disclosure as defined by the appended claims and their equivalents. Therefore, the scope of the present disclosure should not be limited to the above embodiments, but should be determined not only by the appended claims but also by the equivalents of the appended claims.

Claims

1. A gallium nitride-based laser, characterized in that, comprising: a substrate (1); a buffer layer (2), fabricated on the upper surface of the substrate (1); a lower confinement layer (3), fabricated on the upper surface of the buffer layer (2); In x Ga 1-x N lower waveguide layer (4), fabricated on the upper surface of the lower confinement layer (3); The active region (5) is fabricated on the upper surface of the In x Ga 1-x N lower waveguide layer (4); In x Ga 1-x N upper waveguide layer (6), fabricated on the upper surface of the active region (5); An electron blocking layer (7) is fabricated on the upper surface of the In x Ga 1-x N upper waveguide layer (6); an upper confinement layer (8), fabricated on the upper surface of the electron blocking layer (7); an ohmic contact layer (9), fabricated on the upper surface of the upper confinement layer (8); a P-type electrode (10), fabricated on the upper surface of the ohmic contact layer (9); an N-type electrode (11), fabricated on the lower surface of the substrate (1); Among them, the In x Ga 1-x The thickness of the upper waveguide layer (6) of N is less than that of the In x Ga 1-x The thickness of the lower waveguide layer (4) of N; The active region (5) is an In x Ga 1-x N multi-quantum well structure, including two well layers (52) and three barrier layers (51), and the well layers (52) and the barrier layers (51) are alternately distributed; the thicknesses of the two barrier layers (51) close to the In x Ga 1-x N upper waveguide layer (6) are the same, and the thickness of the barrier layer (51) close to the In x Ga 1-x N lower waveguide layer (4) is less than the thicknesses of the two barrier layers (51) close to the In x Ga 1-x N upper waveguide layer (6).

2. The gallium nitride-based laser according to claim 1, characterized in that, The material of the buffer layer (2) is N-type doped GaN material, and the doping concentration is 1×10 18 cm -3 ~1×10 19 cm -3 , and the thickness is 10~300 μm.

3. The gallium nitride-based laser according to claim 1, characterized in that, The material of the lower confinement layer (3) is Al x Ga 1-x N material, N-type doped, with an Al component of 0.01 to 0.15 and a doping concentration of 1×10 18 cm -3 ~1×10 19 cm -3 , and the thickness is 0.5 to 2 μm.

4. The gallium nitride-based laser according to claim 1, characterized in that, The In x Ga 1-x The material of the lower waveguide layer (4) of N is N-type doped In x Ga 1-x N material, the In component is 0.05 to 0.15, and the doping concentration is 1×10 17 cm -3 ~5×10 17 cm -3 , and the thickness is 0.1 to 1 μm.

5. The gallium nitride-based laser according to claim 1, characterized in that, The material of the well layer (52) is In x Ga 1-x N material, N-type doped, with an In component of 0.2 to 0.35 and a doping concentration of 1×10 16 cm -3 ~1×10 17 cm -3 , and the thickness is 2 to 5 nm; The material of the stack layer (51) is In x Ga 1-x N material, N-type doped, with the In component being 0 to 0.05 and the doping concentration being 1×10 17 cm -3 ~5×10 17 cm -3 , and the thickness is 3 to 20 nm.

6. The gallium nitride-based laser according to claim 1, characterized in that, The said In x Ga 1-x The material of the upper waveguide layer (6) on N is N-type doped In x Ga 1-x N material, the In component is 0.02 to 0.10, and the doping concentration is 1×10 17 cm -3 ~5×10 17 cm -3 , and the thickness is 0.1 to 1 μm.

7. The gallium nitride-based laser according to claim 1, characterized in that, The In x Ga 1-x composition of In in the upper waveguide layer (6) of x Ga 1-x N is less than the In composition in the lower waveguide layer (4) of 8. The gallium nitride-based laser according to claim 1, characterized in that, The material of the electron blocking layer (7) is Al x Ga 1-x N material, P-type doped, with an Al component of 0.1 to 0.25 and a doping concentration of 5×10 19 cm -3 ~2×10 20 cm -3 , and the thickness is 5 to 30 nm.

9. The gallium nitride-based laser according to claim 1, characterized in that, The material of the upper confinement layer (8) is Al x Ga 1-x N material, P-type doped, with an Al component of 0.01 to 0.15 and a doping concentration of 1×10 19 cm -3 ~5×10 19 cm -3 , and the thickness is 0.5 to 2 μm; the width of the upper confinement layer (8) is smaller than the width of the electron blocking layer (7).

10. The gallium nitride-based laser according to claim 1, characterized in that, The material of the ohmic contact layer (9) is GaN material, which is P-type doped with a doping concentration of 1×10 20 cm -3 ~5×10 20 cm -3 , and the thickness is 20~100 nm.

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