Multi-zone electrostatic chuck

Abstract

An exemplary semiconductor processing chamber may include a base including a platform configured to support a semiconductor substrate across a surface of the platform. The chamber may include a first conductive mesh incorporated within the platform and configured to function as a first adsorption mesh. The first conductive mesh may extend radially across the platform. The chamber may include a second conductive mesh incorporated within the platform and configured to function as a second adsorption mesh. The second conductive mesh may be characterized by an annular shape. The second conductive mesh may be disposed between the first conductive mesh and the surface of the platform.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to U.S. Patent Application No. 16 / 717,245, filed December 17, 2019, which is hereby incorporated by reference in its entirety for all purposes. Technical Field

[0003] The present technology relates to semiconductor processing and chamber components. More particularly, the present technology relates to chamber components and processing methods. Background Art

[0004] Integrated circuits are made possible by creating layers of material with intricate patterns on substrate surfaces. Creating patterned materials on substrates requires controlled methods for forming and removing exposed material. As component dimensions continue to shrink, the deposited material can impose stress on the substrate, potentially causing it to warp. During subsequent deposition operations, wafer warpage can affect contact across the substrate support, thereby impacting heating. Uneven heating distribution across the substrate can impact subsequent deposition operations, leading to uneven deposition across the substrate surface.

[0005] Therefore, there is a need for improved systems and methods for producing high-quality components and structures. The present technology addresses these and other needs. Summary of the Invention

[0006] An exemplary semiconductor processing chamber may include a base including a platform configured to support a semiconductor substrate across a surface of the platform. The chamber may include a first conductive mesh incorporated within the platform and configured to function as a first adsorption mesh. The first conductive mesh may extend radially across the platform. The chamber may include a second conductive mesh incorporated within the platform and configured to function as a second adsorption mesh. The second conductive mesh may be characterized by an annular shape. The second conductive mesh may be disposed between the first conductive mesh and the surface of the platform.

[0007] In some embodiments, the chamber may include a third conductive mesh incorporated within the platform and configured to function as a third adsorption mesh. The third conductive mesh may be contained within the inner annular radius of the second conductive mesh. The third conductive mesh may be disposed between the first conductive mesh and the platform surface. The second and third conductive meshes may be coplanar within the platform. The second and third conductive meshes may be separated by an annular gap. The chamber may include a first thermocouple associated with the second conductive mesh and a second thermocouple associated with the third conductive mesh. The first and second conductive meshes may be capable of operating independently of a power source. The chamber may include a mica sheet disposed between the first and second conductive meshes. The mica sheet may extend into an aperture formed in the first conductive mesh, and an electrode connector may extend through the aperture and the mica sheet to electrically couple with the second conductive mesh. The chamber may include at least two additional conductive meshes, the at least two additional conductive meshes being axially aligned with the first and second conductive meshes.

[0008] Some embodiments of the present technology may include a substrate support base. The base may include a platform configured to support a semiconductor substrate across a surface of the platform. The base may include a first conductive mesh incorporated into the platform and configured to function as a first adsorption mesh. The first conductive mesh may extend radially along the platform. The base may include a second conductive mesh incorporated into the platform and configured to function as a second adsorption mesh. The second conductive mesh may be characterized as being annular, and the second conductive mesh may be disposed between the first conductive mesh and the surface of the platform. The chamber may include a third conductive mesh incorporated into the platform and configured to function as a third adsorption mesh. The third conductive mesh may be contained within an inner annular radius of the second conductive mesh. The third conductive mesh may be disposed between the first conductive mesh and the surface of the platform.

[0009] In some embodiments, the chamber may include a first thermocouple associated with the second conductive mesh, and a second thermocouple associated with the third conductive mesh. The second conductive mesh and the third conductive mesh may be coplanar within the platform. The second conductive mesh and the third conductive mesh may be separated by an annular gap. The first conductive mesh and the second conductive mesh may be operable independently of a power source within the substrate support. The base may include a mica sheet disposed between the first conductive mesh and the second conductive mesh. The mica sheet may extend into an aperture formed in the first conductive mesh. An electrode connector may extend through the aperture and the mica sheet to electrically couple with the second conductive mesh. The base may include at least two additional conductive meshes, the at least two additional conductive meshes being concentrically aligned with the first conductive mesh and the second conductive mesh.

[0010] Some embodiments of the present technology may encompass semiconductor processing methods. The method may include clamping a substrate on a substrate support by engaging a first conductive mesh of the substrate support. The first conductive mesh may span the substrate support. The method may include engaging a second conductive mesh of the substrate support. The second conductive mesh may include a ring-shaped mesh covering the first conductive mesh. The first conductive mesh may engage the substrate at a first clamping voltage. The second conductive mesh may engage the substrate at a second clamping voltage greater than the first clamping voltage. The method may include performing a semiconductor processing operation on the substrate. In some embodiments, the second conductive mesh may be characterized as a ring-shaped mesh. The substrate support may include a third conductive mesh, and the second conductive mesh and the third conductive mesh may be coplanar.

[0011] This technique can provide several benefits over conventional systems and techniques. For example, the system can improve the deposition profile to improve uniformity across the substrate. Additionally, this technique can provide in-situ adjustment of the clamping voltage, which can allow adjustments that affect deposition during processing and other semiconductor processing. These and other embodiments (and many of their advantages and features) are described in more detail in conjunction with the following description and accompanying figures. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The nature and advantages of the disclosed technology may be further understood by reference to the remainder of the specification and the accompanying drawings.

[0013] Figure 1 A schematic cross-sectional diagram illustrating an exemplary processing chamber according to some embodiments of the present technology is shown.

[0014] Figure 2 A schematic cross-sectional view of an exemplary substrate support is shown in accordance with some embodiments of the present technology.

[0015] Figure 3 A schematic cross-sectional view of an exemplary substrate support is shown in accordance with some embodiments of the present technology.

[0016] Figure 4 Exemplary operations in a method of semiconductor processing, according to some embodiments of the present technology, are illustrated.

[0017] Several figures are included as schematic diagrams. It should be understood that the figures are for illustrative purposes and should not be considered to scale unless specifically stated to be drawn to scale. Furthermore, as schematic diagrams, the figures are provided to aid understanding and may not include all aspects or information as actually presented and may include content that is exaggerated for illustrative purposes.

[0018] In the accompanying drawings, similar components and / or features may be provided with the same reference numerals. Furthermore, components of the same type may be distinguished by a letter following the reference numeral, which distinguishes similar components. If only the first reference numeral is used in the specification, the description applies to any similar component having the same first reference numeral, regardless of the suffix letter. DETAILED DESCRIPTION

[0019] Many material deposition processes can be temperature-sensitive. In various processing systems, a substrate support can serve as a heat source for the substrate during deposition. As a manufacturing process is performed, numerous layers of material may form on the substrate, which can exert significant stresses on the substrate. In many cases, these stresses can cause some amount of substrate warping. Electrostatic attraction can counteract much of this warping effect, maintaining a flatter substrate. This maintains more uniform contact with the substrate support, thereby ensuring more uniform heating of the substrate.

[0020] Stress may increase, leading to more pronounced wafer warpage, and many conventional techniques may attempt to counteract wafer warpage by increasing the clamping voltage to overcome the higher stresses, or by otherwise modifying chamber components or processes. Increasing the clamping voltage may provide limited improvement as stress increases, and simply increasing the clamping voltage may have adverse effects. For example, many monopolar chucks receive a uniform voltage bias across the entire electrode. Electric field lines tend to concentrate at the center of the substrate because electric flux can have lower losses at the center of the substrate. While this counteracting force can overcome wafer warpage due to some film stress, as voltage increases, this force may cause the radial edges of the substrate to eventually pull away from the substrate support. Consequently, while uniform temperature transfer may occur closer to the center of the substrate, where it remains in contact with the heated substrate support, at the peripheral edges, gaps between the substrate and support may reduce heat transfer, and temperature gradients across the substrate may occur.

[0021] Temperature gradients across the substrate can have a variety of effects. For example, while some deposition operations increase deposition at higher temperatures, some other deposition operations may reduce deposition at higher temperatures. In the first case, where edge warping may occur on the substrate, a center-peak deposition process may occur. In the latter case, an edge-peak deposition process may occur. Conventional techniques may have attempted to overcome these effects by adjusting alternative processing aspects. For example, some substrate supports may attempt to compensate for heat losses using multi-zone heaters that can transfer more heat to the edge regions. However, in addition to wasting energy, gaps may also make it more difficult to produce uniform heat transfer. Additionally, changing processing conditions or flow through the chamber to compensate for uneven deposition may require greater customization of components to try to offset each unique chamber feature. As a result, many conventional techniques continue to result in greater temperature and deposition non-uniformities.

[0022] The present technology overcomes these issues by incorporating a multi-zone electrostatic chuck. By providing a pedestal system that can adjust the holding force at multiple locations across the substrate support, temperature discontinuities can be overcome by providing more uniform contact across the substrate surface. This can allow for a more uniform temperature distribution across the substrate, which can improve deposition thickness across the substrate for temperature-sensitive depositions.

[0023] Although the remainder of the disclosure will generally identify a specific deposition process using the disclosed technology, it will be readily understood that the systems and methods are equally applicable to other deposition and etching chambers, and processes that may occur in such chambers. Therefore, the technology should not be considered limited to use with only these specific deposition processes or chambers. This disclosure will discuss one possible system and chamber that may include components according to embodiments of the technology, and then describe additional variations and adjustments to the system according to embodiments of the technology.

[0024] Figure 1A cross-sectional view of an exemplary processing chamber 100 according to some embodiments of the present technology is illustrated. The figure may illustrate an overview of a system incorporating one or more aspects of the present technology and / or a system that may perform one or more operations according to embodiments of the present technology. Additional details of the chamber 100 or the methods performed may be further described below. According to some embodiments of the present technology, the chamber 100 may be used to form a film layer, although it should be understood that the method may be similarly performed in any chamber in which film formation may occur. The processing chamber 100 may include a chamber body 102, a substrate support 104 disposed within the chamber body 102, and a lid assembly 106 coupled to the chamber body 102 and enclosing the substrate support 104 in a processing volume 120. A substrate 103 may be provided to the processing volume 120 through an opening 126, which may be conventionally sealed for processing using a slit valve or door. During processing, the substrate 103 may be located on a surface 105 of the substrate support. As indicated by arrow 145, the substrate support 104 may be capable of rotating along an axis 147, and the shaft 144 of the substrate support 104 may be located at the axis 147. Alternatively, the substrate support 104 may be lifted for rotation as needed during the deposition process.

[0025] A plasma profile modulator 111 can be disposed in the processing chamber 100 to control the plasma distribution on the substrate 103 disposed on the substrate support 104. The plasma profile modulator 111 can include a first electrode 108, which can be disposed adjacent to the chamber body 102 and can separate the chamber body 102 from the other components of the lid assembly 106. The first electrode 108 can be part of the lid assembly 106 or can be a separate sidewall electrode. The first electrode 108 can be a ring or annular member and can be a ring electrode. The first electrode 108 can be a continuous ring around the perimeter of the processing chamber 100 surrounding the processing volume 120, or can be discontinuous at selected locations if desired. The first electrode 108 can also be a perforated electrode, such as a perforated ring or mesh electrode, or can be a flat plate electrode, such as a secondary gas distributor.

[0026] The one or more isolators 110a, 110b can be a dielectric material, such as a ceramic or a metal oxide, for example, aluminum oxide and / or aluminum nitride, and can contact the first electrode 108 and electrically and thermally isolate the first electrode 108 from the gas distributor 112 and the chamber body 102. The gas distributor 112 can define an aperture 118 for distributing process precursors into the processing volume 120. The gas distributor 112 can be coupled to a first power source 142, such as an RF generator, an RF power supply, a DC power supply, a pulsed DC power supply, a pulsed RF power supply, or any other power source that can be coupled to the processing chamber. In some embodiments, the first power source 142 can be an RF power supply.

[0027] The gas distributor 112 may be a conductive gas distributor or a non-conductive gas distributor. The gas distributor 112 may also be formed of conductive and non-conductive components. For example, the body of the gas distributor 112 may be conductive, while the panel of the gas distributor 112 may be non-conductive. The gas distributor 112 may be formed of, for example, Figure 1 A first power source 142 is shown providing power, or in some embodiments, the gas distributor 112 may be grounded.

[0028] The first electrode 108 can be coupled to a first tuning circuit 128, which can control the ground path of the processing chamber 100. The first tuning circuit 128 can include a first electronic sensor 130 and a first electronic controller 134. The first electronic controller 134 can be or include a variable capacitor or other circuit element. The first tuning circuit 128 can be or include one or more inductors 132. The first tuning circuit 128 can be any circuit that achieves a variable or controllable impedance under the plasma conditions present in the processing volume 120 during processing. In some illustrated embodiments, the first tuning circuit 128 can include a first circuit branch and a second circuit branch coupled in parallel between ground and the first electronic sensor 130. The first circuit branch can include a first inductor 132A. The second circuit branch can include a second inductor 132B coupled in series with the first electronic controller 134. The second inductor 132B can be disposed between the first electronic controller 134 and a node connecting both the first circuit branch and the second circuit branch to the first electronic sensor 130. The first electronic sensor 130 may be a voltage or current sensor and may be coupled to a first electronic controller 134 , which may provide a degree of closed-loop control of the plasma conditions within the processing volume 120 .

[0029] The second electrode 122 can be coupled to the substrate support 104. The second electrode 122 can be embedded within the substrate support 104 or coupled to a surface of the substrate support 104. The second electrode 122 can be a plate, a perforated plate, a mesh, a wire mesh, or any other distributed arrangement of conductive elements. The second electrode 122 can be a tuning electrode and can be coupled to a second tuning circuit 136 by a conduit 146, such as a cable having a selected resistance (e.g., 50 ohms) disposed within the shaft 144 of the substrate support 104. The second tuning circuit 136 can have a second electronic sensor 138, which can be a second variable capacitor, and a second electronic controller 140. The second electronic sensor 138 can be a voltage or current sensor and can be coupled to the second electronic controller 140 to provide further control of the plasma conditions in the processing volume 120.

[0030] A third electrode 124, which may be a bias electrode and / or an electrostatic chuck electrode, may be coupled to the substrate support 104. The third electrode may be coupled to a second power source 150 via a filter 148, which may be an impedance matching circuit. The second power source 150 may be a DC power source, a pulsed DC power source, an RF bias power source, a pulsed RF power source or bias power source, or a combination of these or other power sources. In some embodiments, the second power source 150 may be an RF bias power source.

[0031] Figure 1 The lid assembly 106 and substrate support 104 can be used with any processing chamber used for plasma or thermal processing. In operation, the processing chamber 100 can provide real-time control of plasma conditions in the processing volume 120. The substrate 103 can be positioned on the substrate support 104, and process gas can be flowed through the lid assembly 106 using the inlet 114 according to any desired flow schedule. The gas can exit the processing chamber 100 through the outlet 152. A power source can be coupled to the gas distributor 112 to generate a plasma in the processing volume 120. In some embodiments, the substrate can be subjected to an electrical bias using the third electrode 124.

[0032] When the plasma in the processing volume 120 is energized, a potential difference can be generated between the plasma and the first electrode 108. A potential difference can also be generated between the plasma and the second electrode 122. Electronic controllers 134, 140 can then be used to adjust the flow characteristics of the ground path represented by the two tuning circuits 128 and 136. Set points can be passed to the first tuning circuit 128 and the second tuning circuit 136 to provide independent control of the deposition rate and plasma density uniformity from the center to the edge. In an embodiment where both electronic controllers can be variable capacitors, the electronic sensors can adjust the variable capacitors to independently maximize the deposition rate and minimize thickness non-uniformity.

[0033] Each of the tuning circuits 128, 136 can have a variable impedance that can be adjusted using the corresponding electronic controller 134, 140. Where the electronic controllers 134, 140 are variable capacitors, the capacitance range of each variable capacitor and the inductance of the first and second inductors 132A, 132B can be selected to provide an impedance range. This range can depend on the frequency and voltage characteristics of the plasma and can have a minimum value within the capacitance range of each variable capacitor. Thus, when the capacitance of the first electronic controller 134 is at a minimum or maximum value, the impedance of the first tuning circuit 128 can be high, resulting in a plasma shape with minimal aerial or lateral coverage on the substrate support. When the capacitance of the first electronic controller 134 approaches a value that minimizes the impedance of the first tuning circuit 128, the aerial coverage of the plasma can grow to a maximum, effectively covering the entire working area of ​​the substrate support 104. As the capacitance of the first electronic controller 134 deviates from the minimum impedance setting, the plasma shape can shrink from the chamber walls and the aerial coverage of the substrate support can decrease. The second electronic controller 140 may have a similar effect, as the capacitance of the second electronic controller 140 may be varied to increase and decrease the air coverage of the plasma on the substrate support.

[0034] The electronic sensors 130, 138 can be used to tune the respective circuits 128, 136 in a closed loop. Depending on the type of sensor used, a set point for current or voltage can be installed in each sensor, and the sensors can be equipped with control software that determines adjustments to each respective electronic controller 134, 140 to minimize deviations from the set point. Thus, the plasma shape can be selected and dynamically controlled during processing. It should be understood that although the previous discussion is based on electronic controllers 134, 140 that can be variable capacitors, any electronic component with adjustable characteristics can be used to provide adjustable impedance for the tuning circuits 128, 136.

[0035] Figure 2 A schematic cross-sectional view of an exemplary substrate support 200 according to some embodiments of the present technology is shown. The substrate support 200 can be included in the chamber 100 described above, or in any other processing chamber that can employ an electrostatic chuck. The substrate support 200 can include additional details of the substrate support 104 described above, and can include any of the materials, components, or characteristics previously described.

[0036] The substrate support 200 can be a base as shown, including a platform 205 and a rod 210, which can be coupled to the platform. In some embodiments, the platform can be or include a ceramic material or any other dielectric material and can be configured to support a semiconductor substrate on a surface of the platform. As noted, the substrate support 200 can include any of the components previously discussed, including heating elements or other components, and can include one or more conductive meshes that serve as a coordinated suction mechanism and can provide individually controlled suction zones across the substrate support.

[0037] As shown, the substrate support 200 may include a first conductive mesh 215 incorporated into the platform 205. The first conductive mesh 215 may be configured to function as a first electrostatic adsorption mesh to clamp a substrate to the substrate support. The first conductive mesh may extend radially or laterally across the platform and may substantially or completely cover an area on the substrate support, providing a clamping force or electrostatic force across the substrate when a voltage is applied to the first conductive mesh 215. The first conductive mesh 215 may include holes or gaps, as shown, to facilitate passage of one or more components through the first conductive mesh, as will be further described below.

[0038] In some embodiments of the present technology, the substrate support 200 may further include one or more additional conductive meshes that can operate in conjunction with the first conductive mesh 215 to provide tunable adsorption control along one or more regions of the substrate support. For example, a second conductive mesh 220 can be incorporated into the platform 205 and can be configured to function as a second adsorption mesh. As further illustrated and described below, the second conductive mesh 220 can be characterized as having an annular shape and can be positioned within the substrate support 200 between the first conductive mesh 215 and the platform surface on which the substrate can be positioned. In other embodiments, the second conductive mesh 220 can be a circular mesh, for example, characterized by a diameter that is smaller than the diameter of the first conductive mesh 215.

[0039] In some embodiments, the second conductive mesh 220 may be characterized by an outer annular radius, wherein the annular radius is equal to or similar to the outer diameter of the first conductive mesh 215. The second conductive mesh 220 may be characterized by an inner annular radius, wherein the inner annular radius may be any distance from the central axis through the base, which may allow for multiple additional adsorption meshes to be incorporated into the base support. For example, as shown, the substrate support 200 may include multiple additional adsorption meshes to provide additional areas for controlling electrostatic adsorption. As previously described, since substrate warpage can be tensile or compressive, enhanced adsorption at different areas of the substrate may provide advantages applicable in nearly any process to accommodate the substrate being processed. Therefore, in some embodiments of the present technology, in addition to the base adsorption mesh, the substrate support may include greater than or about one, greater than or about two, greater than or about three, greater than or about four, greater than or about five, greater than or about six, or more additional adsorption meshes.

[0040] As shown, the substrate support 200 may include four additional adsorption meshes, distributed within respective regions of the substrate support and overlying the base adsorption mesh. For example, in addition to the second conductive mesh 220, a third conductive mesh 225 may be incorporated into the platform 205 and configured to function as a third adsorption mesh. As shown, the third conductive mesh 225 may be contained within the inner annular radius of the second conductive mesh 220. The third conductive mesh 225 may also be characterized as having an annular shape, although in some embodiments, the mesh may be characterized as having a circular shape or a shape similar to the first conductive mesh 215, albeit with a smaller diameter than the first conductive mesh 215. A fourth conductive mesh 230 may be incorporated into the platform 205 and configured to function as a fourth adsorption mesh. The fourth conductive mesh 230 may be contained within the inner annular radius of the third conductive mesh and may also be annular or circular, as described above, depending on any additional meshes. A fifth conductive mesh 235 may be incorporated into the platform and contained within the inner annular radius of the fourth conductive mesh 230. As shown, this mesh may also be annular or circular, and when included as the innermost mesh, may extend coaxially through the substrate support along the central axis. It should be understood that any number or size of meshes may be included within a substrate support according to embodiments of the present technology, and that the substrate support may or may not include any of the additional meshes shown.

[0041] In some embodiments shown, each additional adsorption screen can be coplanar within the substrate support and can be concentric about a central axis passing through the substrate support. The additional adsorption screens can also be coaxial with the first conductive screen 215. As shown, a gap, such as an annular gap, can be maintained between each additional screen to allow for individual operation. In some embodiments, the substrate support can be made of a dielectric or ceramic material that can maintain electrical isolation between the individual screens for operation.

[0042] Each conductive mesh incorporated into the base can be coupled to a power source 240. In some embodiments, each conductive mesh can operate independently with a single power source, although in some embodiments, each conductive mesh can be coupled to a separate power source. Each power source can be configured to provide a voltage to the conductive mesh for electrostatic adsorption. Electrostatic adsorption can apply a voltage nominally about 200V or less to hold the substrate during semiconductor processing. According to embodiments of the present technology, when multiple meshes are incorporated into a substrate support, less voltage can be used to maintain the clamping effect with the first conductive mesh 215, while additional power can be applied to each other conductive mesh to provide adjustable clamping at multiple locations across the substrate. Because additional adsorption meshes can be used to provide a specific adsorption voltage in each individual area, the voltage applied to the main adsorption mesh or base adsorption mesh (e.g., the first conductive mesh 215) can be reduced to provide a minimum degree of adsorption that can hold the substrate in place for processing. Thus, in some embodiments, and depending on the configuration of the conductive meshes, the voltage applied to the first conductive mesh can be less than or about 400V, and can be less than or about 350V, less than or about 300V, less than or about 250V, less than or about 200V, less than or about 150V, less than or about 100V, less than or about 80V, less than or about 60V, less than or about 50V, or less. It should be understood that in embodiments of the present technology, any voltage discussed throughout this disclosure can be at any polarity, and any mesh discussed can be operated at any polarity. For example, in embodiments of the present technology, any of the meshes can be operated at the same polarity or at different polarities.

[0043] When a voltage is applied to any additional conductive web, this voltage can operate cumulatively with the voltage applied to the first conductive web and can provide additional adsorption on the substrate in areas associated with the additional conductive webs. Each additional web can operate at any voltage greater than or about 50 V, and can operate at voltages greater than or about 100 V, greater than or about 150 V, greater than or about 200 V, greater than or about 250 V, greater than or about 300 V, greater than or about 350 V, greater than or about 400 V, greater than or about 450 V, greater than or about 500 V, or greater.

[0044] Thus, when the cumulative effect of each mesh is applied, the voltage can range from about 50V or less (depending on the voltage applied to the first conductive mesh) to a combined voltage in a particular region that can be greater than or about 50V, and can be increased to greater than or about any combination of the aforementioned voltages, or any voltage or range of voltages contained within the aforementioned ranges. While there may be a correlation between the increased voltage applied and the ability to increase contact at the substrate region, as previously discussed, depending on the characteristics of the substrate, increasing the voltage above a certain threshold may cause the applied clamping force to warp, deform, or even fracture the substrate. Thus, in some embodiments, the second voltage can be maintained at less than or about 1100V, and can be maintained at less than or about 1000V, less than or about 900V, less than or about 800V, or less.

[0045] In some embodiments, one or more thermocouples may be incorporated into the system to determine or estimate the temperature distribution within a region along the substrate or substrate support. Based on temperature differences within the substrate support, such as higher or lower temperatures, an estimate can be made to determine contact issues with the substrate. Thus, temperature measurements can be used to determine whether to increase or decrease adsorption in any particular region to compensate for temperature effects that may result in uneven deposition. For example, thermocouple leads can extend through the substrate support rod 210, and thermocouples 250 can be positioned or associated within each region of the substrate support for temperature measurement. As shown, where four additional adsorption screens are included, four thermocouples can be included for each associated adsorption screen, with each individual region being associated with a single thermocouple. In embodiments, any number of additional adsorption screens and / or thermocouples can be incorporated into the substrate support to provide increased adsorption or measurement at any number of regions.

[0046] Because the first conductive mesh can be in operation at all times and additional conductive meshes can be operated as needed for processing, in some embodiments, losses or leakage may occur between components. Therefore, in some embodiments, material 245 can be disposed between the first adsorption mesh and each other overlapping adsorption mesh. The material can be any electrically insulating material, and in some embodiments, the material can also be thermally conductive to maintain sufficient heat transfer from one or more heater elements in the lower layer to the substrate. For example, a mica sheet or other electrically insulating and / or thermally conductive material can be disposed between the first conductive mesh and other conductive meshes included between the first conductive mesh and the surface of the substrate support. In addition, the mica sheet can also extend vertically through a gap or hole formed in the first conductive mesh, and an electrode connector or coupling and / or thermocouple can extend through the gap or hole to connect to the upper electrode or be positioned in the substrate support. In some embodiments, this can further provide insulation between the components.

[0047] In operation, voltage can be applied in a variety of ways. For example, a base voltage for electrostatic coupling can be applied to the first conductive mesh 215, and in some embodiments, this base voltage can be a minimum voltage. Depending on the warping or profile of the wafer, additional conductive meshes can be engaged to increase the positional clamping of the substrate. For example, in some embodiments where the radial edge of the substrate may warp away from the substrate support, a second conductive mesh 220 can be engaged to increase the voltage applied to this area. Similarly, depending on the deposition profile, adsorption can be increased or decreased in a specific area by adjusting the adsorption at any conductive mesh. For example, in addition to increasing positional adsorption by engaging a specific conductive mesh, in some embodiments, adsorption in a specific area can be effectively reduced by increasing adsorption in all other areas except this specific area. The present technology similarly encompasses any number of other adjustments, and it should be understood that the examples discussed are not intended to limit the present technology.

[0048] Figure 3 A schematic plan view of an exemplary substrate support 200 according to some embodiments of the present technology is shown, and a top view of the substrate support 200 described above may be shown. It should be understood that the substrate support may include any features, components or characteristics of any other substrate support discussed elsewhere. As shown, the annular nature of several additional adsorption meshes can be seen in this figure. For example, each of the second conductive mesh 220, the third conductive mesh 225, the fourth conductive mesh 230 and the fifth conductive mesh 235 can be seen to illustrate the corresponding coverage area. In addition, gaps are shown between each individual adsorption mesh, which can limit the interaction between the conductive meshes. Within each gap, a first conductive mesh 215 can be seen, which can extend across the substrate support to clamp across the entire substrate, as previously described.

[0049] Figure 4 Exemplary operations in a method 400 of semiconductor processing according to some embodiments of the present technology are shown. The method can be performed in one or more chambers, including any of the chambers previously described, and can include any of the substrate supports previously discussed, as well as any other aspects of any of the systems or chambers previously described. The method 400 can include a number of optional operations that may or may not be specifically related to some embodiments of the method according to the present technology. For example, many operations are described to provide a wider range of structural forms, but are not critical to the technology or can be performed by readily understood alternative methods. For example, and as previously described, the operations can be performed before the substrate is transported to a processing chamber (such as the processing chamber 100 described above), where the method 400 can be performed with or without some or all aspects of the aforementioned substrate support 200.

[0050] Method 400 may include, at operation 405, clamping a semiconductor substrate on a substrate support within a processing region of a semiconductor processing chamber. The substrate may be clamped by engaging a first conductive mesh (e.g., first conductive mesh 215 described above) of the substrate support, which may extend through the substrate support. At operation 410, one or more additional conductive meshes within the substrate support may be engaged. The one or more additional conductive meshes may include at least one annular mesh or circular mesh, or meshes of any other geometric shape, that overlays the first conductive mesh. The first conductive mesh may engage the substrate at a first clamping voltage (e.g., any of the voltages previously mentioned). The one or more additional conductive meshes may then engage regions of the substrate at a second clamping voltage greater than the first clamping voltage. Due to the cumulative effect of operating the second conductive meshes in some embodiments, the one or more additional conductive meshes may operate at a lower voltage than the first conductive mesh, and the cumulative effect may further clamp the substrate. For example, where the first conductive mesh operates at 100V, the second conductive mesh may operate at 50V in a specific region of the substrate support. Thus, for example, while other regions of the substrate may engage at 100V, regions corresponding to the second conductive mesh may engage at, for example, 150V. As previously described, any other combinations or adsorption schemes are similarly contemplated and should be understood to be similarly encompassed by the present technology.

[0051] A semiconductor processing operation can then be performed at operation 415 , which can involve deposition, etching, or any other process that can benefit from electrostatic adsorption, as described above. In some embodiments, one or more temperatures can be monitored across the substrate or substrate support at optional operation 420 . The temperatures can be used to determine whether uniform processing can be performed or to determine whether temperature effects may occur. In some embodiments, these readings or measurements can be used to adjust the adsorption voltage in one or more regions of the substrate support. For example, in one non-limiting embodiment, the substrate temperature may be lower, possibly due to a lack of full contact. This can be reflected, for example, as a decrease in the temperature at the substrate or substrate support due to reduced heat transfer, or as a higher temperature at the substrate support. In response, the adsorption voltage for the associated adsorption network in this region can be increased or otherwise adjusted at optional operation 425 , which can provide more uniform heat transfer to the region of the substrate. Additionally, during subsequent processing (e.g., a deposition process), thickness measurements across the substrate may be correlated to regions of the substrate where contact has been reduced. Consequently, subsequent processing can increase or decrease adsorption in one or more relevant regions to accommodate thickness variations and improve uniformity across the substrate.

[0052] By utilizing methods and components according to embodiments of the present technology, the deposition or formation of materials can be improved.By providing more control over adsorption across a substrate support, the uniformity of temperature distribution can be improved, which can improve the processing performed.

[0053] In the above description, for the purpose of explanation, numerous details are set forth to provide an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that certain embodiments can be practiced without some of these details (or with additional details).

[0054] Having disclosed several embodiments, it will be understood by those skilled in the art that various modifications, alternative structures, and equivalents may be used without departing from the spirit of the embodiments. In addition, some well-known processes and elements have not been described to avoid unnecessarily obscuring the present technology. Therefore, the above description should not be considered to limit the scope of the present technology. In addition, methods or processes may be described as sequential or step-by-step, but it should be understood that the operations may be performed simultaneously or in an order different from that listed.

[0055] Where a range of values ​​is provided, it will be understood that, unless the context clearly dictates otherwise, each intervening value between the upper and lower limits of the range is also specifically disclosed, accurate to the smallest fraction of the unit of the lower limit. Any stated value or unstated intervening value within the stated range and any narrower range between any other stated or intervening value within the stated range are included. The upper and lower limits of these smaller ranges may independently be included in or excluded from the range, and each range in the smaller range that includes one, both, or neither of the upper and lower limits is also included in the present technology, and is subject to any specifically excluded limitations in the stated range. Where a stated range includes one or both of the upper and lower limits, ranges excluding either or both of these limits are also included.

[0056] As used in the specification and the appended claims, the singular forms "a," "an," and "the" include plural references unless the context clearly dictates otherwise. Thus, for example, reference to "a precursor" includes a plurality of such precursors and reference to "the layer" includes reference to one or more layers and equivalents thereof known to those skilled in the art, and so forth.

[0057] Furthermore, the words “comprise(s),” “comprising,” “contain(s),” “containing,” “include(s),” and “including” as used in this specification and the following claims are meant to specify the presence of stated features, integers, components, or operations, but they do not preclude the presence or addition of one or more other features, integers, components, operations, acts, or groups.

Claims

1. A semiconductor processing chamber comprising: a base comprising a platform configured to support a semiconductor substrate across a surface of the platform; a first conductive web incorporated within the platform and configured to function as a first adsorption web, wherein the first conductive web extends radially across the platform; a second conductive mesh incorporated within the platform and configured to function as a second adsorption mesh, wherein the second conductive mesh is characterized by a ring shape, and wherein the second conductive mesh is disposed between the first conductive mesh and the surface of the platform; and A first thermocouple is associated with the second conductive mesh to measure a temperature within a region of the second conductive mesh.

2. The semiconductor processing chamber of claim 1 , further comprising a third conductive mesh incorporated within the platform and configured to function as a third adsorption mesh, wherein the third conductive mesh is contained within an inner annular radius of the second conductive mesh, and wherein the third conductive mesh is disposed between the first conductive mesh and the surface of the platform.

3. The semiconductor processing chamber of claim 2, wherein the second conductive mesh and the third conductive mesh are coplanar within the platform.

4. The semiconductor processing chamber of claim 3, wherein the second conductive mesh and the third conductive mesh are separated by an annular gap.

5. The semiconductor processing chamber of claim 4 , further comprising: A second thermocouple is associated with the third conductive mesh to measure a temperature within a region of the third conductive mesh.

6. The semiconductor processing chamber of claim 1, wherein the first conductive mesh and the second conductive mesh are capable of operating independently of a power source.

7. The semiconductor processing chamber of claim 1, further comprising a mica sheet disposed between the first conductive mesh and the second conductive mesh.

8. The semiconductor processing chamber of claim 7, wherein the mica sheet extends into a hole formed in the first conductive mesh, and wherein an electrode connector extends through the hole and the mica sheet to electrically couple with the second conductive mesh.

9. The semiconductor processing chamber of claim 1, further comprising at least two additional conductive webs axially aligned with the first conductive web and the second conductive web.

10. A substrate support base, comprising: a platform configured to support a semiconductor substrate across a surface of the platform; a first conductive mesh, the first conductive mesh being incorporated into the platform and configured to function as a first adsorption mesh, wherein the first conductive mesh extends radially along the platform; a second conductive mesh incorporated within the platform and configured to function as a second adsorption mesh, wherein the second conductive mesh is characterized by a ring shape, and wherein the second conductive mesh is disposed between the first conductive mesh and the surface of the platform; and A first thermocouple is associated with the second conductive mesh to measure a temperature within a region of the second conductive mesh.

11. The substrate support base of claim 10 , further comprising a third conductive mesh incorporated within the platform and configured to function as a third adsorption mesh, wherein the third conductive mesh is contained within an inner annular radius of the second conductive mesh, and wherein the third conductive mesh is disposed between the first conductive mesh and the surface of the platform.

12. The substrate support pedestal of claim 11 , further comprising: A second thermocouple is associated with the third conductive mesh to measure a temperature within a region of the third conductive mesh.

13. The substrate support pedestal of claim 11, wherein the second conductive mesh and the third conductive mesh are coplanar within the platform.

14. The substrate support pedestal of claim 13, wherein the second conductive mesh and the third conductive mesh are separated by an annular gap.

15. The substrate support pedestal of claim 10, wherein the first conductive mesh and the second conductive mesh are operable within the platform independently of a power source.

16. The substrate supporting pedestal of claim 10, further comprising a mica sheet disposed between the first conductive mesh and the second conductive mesh.

17. The substrate support pedestal of claim 16, wherein the mica sheet extends into an aperture formed in the first conductive mesh, and wherein an electrode connector extends through the aperture and the mica sheet to electrically couple with the second conductive mesh.

18. The substrate support pedestal of claim 10, further comprising at least two additional conductive meshes concentrically aligned with the first conductive mesh and the second conductive mesh.

19. A semiconductor processing method comprising: clamping a substrate on a substrate support by engaging a first conductive mesh of the substrate support, wherein the first conductive mesh extends across the substrate support; a second conductive mesh engaging the substrate support, wherein the second conductive mesh comprises a ring-shaped mesh overlying the first conductive mesh, wherein the first conductive mesh engages the substrate at a first clamping voltage, and wherein the second conductive mesh engages the substrate at a second clamping voltage that is greater than the first clamping voltage; and performing a semiconductor processing operation on the substrate, Wherein the substrate support includes a first thermocouple associated with the second conductive mesh to measure a temperature within a region of the second conductive mesh.

20. The semiconductor processing method of claim 19, wherein the second conductive mesh is characterized by being annular, wherein the substrate support further comprises a third conductive mesh, and wherein the second conductive mesh and the third conductive mesh are coplanar.

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