Package structure

Abstract

The present invention discloses a package structure comprising a carrier and at least one interconnect structure. The carrier has at least one first through-hole and a plurality of second through-holes. The first through-hole is located near a central region of the carrier, the second through-holes are located near a peripheral region of the carrier, and the cross-sectional area of the first through-hole is smaller than the total cross-sectional area of the second through-holes. The interconnect structure is located on the carrier and covers the first through-hole and the second through-holes.

Description

Technical Field

[0001] The invention relates to a packaging structure. Background Art

[0002] With the continuous advancement of integrated circuit (IC) manufacturing technology, the demand for packaging production processes has increased. Currently, a variety of technologies are applied in the field of chip packaging, such as fan-out panel level package (FOPLP), chip scale package (CSP), direct chip attach package (DCA) or multi-chip module (MCM) and other flip-chip packaging modules, as well as chip stacking technology that integrates chips into three-dimensional integrated circuits (3DIC).

[0003] However, due to the material properties of the insulating plate used for chip bonding, thermal expansion and contraction during the thermal cycle of the packaging process can easily cause deformation of the insulating plate, resulting in displacement of the circuit layers within. While a support plate can be attached to one side of the insulating plate, this can still cause the insulating plate to warp after the support plate is removed, preventing subsequent solder bumps from effectively or accurately bonding to the circuit layers. Summary of the Invention

[0004] A technical aspect of the present invention is a packaging structure.

[0005] According to some embodiments of the present invention, a package structure includes a carrier and at least one interconnect structure. The carrier has at least one first through-hole and a plurality of second through-holes. The first through-hole is located near a central region of the carrier, the second through-holes are located near a peripheral region of the carrier, and the cross-sectional area of the first through-hole is smaller than the total cross-sectional area of the second through-holes. The interconnect structure is located on the carrier and covers the first through-hole and the second through-holes.

[0006] In some embodiments, the diameter of the first through-hole is the same as the diameter of each of the second through-holes, and the density of the first through-holes is lower than the density of the second through-holes.

[0007] In some embodiments, a diameter of the first through hole is larger than a diameter of each of the second through holes, and the number of the first through holes is smaller than the number of the second through holes.

[0008] In some embodiments, a diameter of the first through hole is smaller than a diameter of each of the second through holes, and the number of the first through holes is smaller than the number of the second through holes.

[0009] In some embodiments, the carrier has a plurality of first through holes, and the total cross-sectional area of the first through holes is smaller than the total cross-sectional area of the second through holes.

[0010] In some embodiments, a diameter of each of the first through holes is smaller than a diameter of each of the second through holes, and the number of the first through holes is greater than the number of the second through holes.

[0011] In some embodiments, the package structure further includes a plurality of metal fillers, each of which is located in the first portion of the first through hole and the first portion of the second through hole, and wherein the second portion of the first through hole and the second portion of the second through hole do not contain any metal fillers.

[0012] In some embodiments, the total cross-sectional area of the second portion of the first through hole is smaller than the total cross-sectional area of the second portion of the second through hole.

[0013] In some embodiments, the package structure includes two interconnect structures, with the carrier located between the two interconnect structures. The two interconnect structures each include a dielectric layer and a conductive wire located within the dielectric layer. The two conductive wires of the two interconnect structures are respectively electrically connected to two ends of one of the metal fillers.

[0014] In some embodiments, the thermal expansion coefficient of the metal filler is different from that of the carrier.

[0015] In some embodiments, the thermal expansion coefficient of the metal filler is greater than the thermal expansion coefficient of the carrier.

[0016] In some embodiments, the package structure further includes a plurality of metal filling materials, wherein the metal filling materials are respectively located in the first portion of the first through hole and the second through hole, wherein the second portion of the second through hole does not contain any metal filling materials.

[0017] In some embodiments, the package structure further includes a plurality of metal filling materials, each of which is located in the first through hole and the second through hole, wherein the diameter of the metal filling material in the first through hole is smaller than the diameter of the metal filling material in the second through hole.

[0018] In some embodiments, the interconnect structure includes a dielectric layer and a conductive line in the dielectric layer, and one of the second vias overlaps with the conductive line in a vertical direction.

[0019] In some embodiments, the first through hole and the second through hole are parallel to each other.

[0020] In the above-described embodiment of the present invention, because the carrier includes at least one first through-hole near the carrier's central region and multiple second through-holes near the carrier's peripheral region, and the cross-sectional area of the first through-hole is smaller than the total cross-sectional area of the second through-holes, when the carrier and a different material layer (e.g., an interconnect structure) have different coefficients of thermal expansion, resulting in warpage, the design of the first and second through-holes can mitigate the amount of warpage, allowing the carrier's peripheral region to shrink and thus reducing the warpage. This prevents displacement of the interconnect structure's conductors due to heat treatment during formation, chip bonding, and chip molding, allowing solder bumps to precisely bond to the interconnect structure's conductors. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The aspects of the present disclosure are best understood from the following detailed description when read in conjunction with the accompanying drawings. Note that, in accordance with standard practice in this industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of discussion.

[0022] Figures 1 to 3 sectional views of various steps of forming a package structure according to one embodiment of the present invention;

[0023] Figures 4 to 10 sectional views of packaging structures according to various embodiments of the present invention;

[0024] Figures 11 to 13 is a cross-sectional view of various steps of forming a package structure according to another embodiment of the present invention;

[0025] Figures 14 to 16 sectional views of package structures according to various embodiments of the present invention.

[0026] Explanation of symbols

[0027] 100,100a~100k:Package structure

[0028] 110:Carrier

[0029] 112: Top

[0030] 114: Bottom surface

[0031] 120,120a: Interconnection structure

[0032] 122: dielectric layer

[0033] 124: Wire

[0034] 130:Metal filler

[0035] C: Central District

[0036] d1,d2,d3,d4: diameter

[0037] O1: First through hole

[0038] O11: First through hole

[0039] O12: First through hole

[0040] O2: Second through hole

[0041] O21: Second through hole

[0042] O22: Second through hole

[0043] P: surrounding area DETAILED DESCRIPTION

[0044] The embodiments disclosed below provide many different embodiments, or examples, for implementing the various features of the subject matter provided. Specific examples of components and arrangements are described below to simplify the present invention. Of course, these examples are merely examples and are not intended to be limiting. In addition, the present invention may repeat element symbols and / or letters in each example. This repetition is for the purpose of simplicity and clarity and does not, in itself, specify the relationship between the various embodiments and / or configurations discussed.

[0045] Spatially relative terms such as "below," "beneath," "lower," "above," "upper," and the like may be used herein for descriptive purposes to describe the relationship of one element or feature to another element or feature as illustrated in the accompanying drawings. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the drawings. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein should be interpreted accordingly.

[0046] Figures 1 to 3 1 is a cross-sectional view showing various steps of forming a package structure 100 according to an embodiment of the present invention. Figure 1 and Figure 2, the carrier 110 has a relative top surface 112 and a bottom surface 114. The material of the carrier 110 can be glass, but is not limited thereto. The carrier 110 has a central area C and a peripheral area P surrounding the central area C. The carrier 110 can be formed with at least one first through hole O1 and a plurality of second through holes O2 through a drilling process, so that the physical structure of the carrier 110 is changed to improve warping. The first through hole O1 and the second through hole O2 pass through the top surface 112 and the bottom surface 114 of the carrier 110, and the first through hole O1 and the second through hole O2 can be parallel to each other. In addition, the first through hole O1 is close to the central area C of the carrier 110, and the second through hole O2 is close to the peripheral area P of the carrier 110, and the cross-sectional area of the first through hole O1 is smaller than the total cross-sectional area of the second through hole O2. The positions and numbers of the first through hole O1 and the second through hole O2 can be changed according to different anti-warping requirements, Figure 2 This is just an example.

[0047] See Figure 3 After the first through hole O1 and the second through hole O2 are formed, an interconnection structure 120 covering the first through hole O1 and the second through hole O2 can be formed on the top surface 112 of the carrier 110 to obtain the package structure 100. The interconnection structure 120 may include a dielectric layer 122 and a wire 124 located in the dielectric layer 122. In this embodiment, the wire 124 may be a redistribution line (RDL), and its material may be copper or other suitable metal for transmitting electrical signals; the material of the dielectric layer 122 may be epoxy resin (Epoxy) or polyimide (Polyimide; PI), but this does not limit the present invention. The second through hole O2 may overlap with the second wire 124 in the vertical direction, or overlap with the dielectric layer 122 in the vertical direction, but this does not limit the present invention.

[0048] Specifically, because the carrier 110 has at least one first through-hole O1 near the central region C of the carrier 110 and a plurality of second through-holes O2 near the peripheral region P of the carrier 110, and the cross-sectional area of the first through-hole O1 is smaller than the total cross-sectional area of the second through-holes O2, when the carrier 110 and different material layers thereon (e.g., the interconnect structure 120) have different coefficients of thermal expansion and thus warp, the design of the first through-hole O1 and the second through-hole O2 can modify the amount of warpage of the carrier 110, allowing the peripheral region P of the carrier 110 to shrink and thereby reducing the amount of warpage of the carrier 110. This prevents displacement of the conductive lines 124 within the interconnect structure 120 due to heat treatment during formation, chip bonding, and chip molding, allowing solder bumps to be precisely bonded to the conductive lines 124 of the interconnect structure 120.

[0049] In this embodiment, the diameter d1 of the first through hole O1 and the diameter d2 of each second through hole O2 can be the same, that is, the first through hole O1 and the second through hole O2 are the same size. In addition, the density of the first through holes O1 is lower than the density of the second through holes O2. With this design, the cross-sectional area of the first through hole O1 can be smaller than the total cross-sectional area of the second through holes O2.

[0050] It should be understood that the connection relationship, materials and functions of the components already described will not be repeated, and will be described first. In the following description, other types of packaging structures will be described.

[0051] Figures 4 to 10 100a-100g are cross-sectional views of package structures according to various embodiments of the present invention. Figure 4 , and Figure 3 The embodiment differs in that the package structure 100a includes an interconnection structure 120a in addition to the interconnection structure 120. The interconnection structures 120 and 120a are respectively located on the top surface 112 and the bottom surface 114 of the carrier 110. In other words, the carrier 110 is located between the two interconnection structures 120 and 120a.

[0052] See Figure 5 The package structure 100b includes a carrier 110 and an interconnection structure 120. Figure 3 The embodiment differs in that the diameter d1 of the first through-hole O1 of the carrier 110 of the package structure 100b is greater than the diameter d2 of each second through-hole O2, and the number of first through-holes O1 is less than the number of second through-holes O2. In this embodiment, the number of first through-hole O1 is one, and the number of second through-holes O2 is five, but this is not intended to limit the present invention. This design allows the cross-sectional area of the first through-hole O1 to be smaller than the total cross-sectional area of the second through-holes O2, allowing more space for the peripheral area P of the carrier 110 of the package structure 100b to be retracted, thereby reducing warpage of the carrier 110.

[0053] See Figure 6 , and Figure 5 The difference between the embodiments is that the package structure 100c includes an interconnection structure 120a in addition to the interconnection structure 120. The interconnection structures 120 and 120a are respectively located on the top surface 112 and the bottom surface 114 of the carrier 110. In other words, the carrier 110 of the package structure 100c is located between the two interconnection structures 120 and 120a.

[0054] See Figure 7The package structure 100d includes a carrier 110 and an interconnect structure 120. The carrier 110 of the package structure 100d has a plurality of first through-holes O1, and the total cross-sectional area of the first through-holes O1 is smaller than the total cross-sectional area of the second through-holes O2. Furthermore, the diameter d1 of each first through-hole O1 is smaller than the diameter d2 of each second through-hole O2, and the number of first through-holes O1 is greater than the number of second through-holes O2. In this embodiment, the number of first through-holes O1 is four, and the number of second through-holes O2 is three, but this is not intended to limit the present invention. With this design, the total cross-sectional area of the first through-holes O1 can be smaller than the total cross-sectional area of the second through-holes O2, allowing more space for the peripheral area P of the carrier 110 of the package structure 100d to shrink, thereby reducing the amount of warping of the carrier 110.

[0055] See Figure 8 , and Figure 7 The difference in implementation is Figure 8 In addition to the interconnect structure 120, the package structure 100e also includes an interconnect structure 120a. Interconnect structures 120 and 120a are located on the top surface 112 and bottom surface 114 of the carrier 110, respectively. In other words, the carrier 110 of the package structure 100e is located between the two interconnect structures 120 and 120a. Furthermore, in this embodiment, the number of first through-holes O1 is 6, the number of second through-holes O2 is 5, and the total cross-sectional area of the first through-holes O1 is smaller than the total cross-sectional area of the second through-holes O2.

[0056] See Figure 9 The package structure 100f includes a carrier 110 and an interconnect structure 120. The interconnect structure 120 is located on the top surface 112 of the carrier 110. The carrier 110 of the package structure 100f has at least one first through-hole O1 and a plurality of second through-holes O2, and the total cross-sectional area of the first through-holes O1 is smaller than the total cross-sectional area of the second through-holes O2. In addition, the diameter d1 of the first through-hole O1 is smaller than the diameter d2 of each second through-hole O2, and the number of first through-holes O1 is smaller than the number of second through-holes O2. In this embodiment, the number of first through-holes O1 is 1 and the number of second through-holes O2 is 3, but this is not intended to limit the present invention. With such a design, the cross-sectional area of the first through-hole O1 can be smaller than the total cross-sectional area of the second through-holes O2, so that the peripheral area P of the carrier 110 of the package structure 100f has more space to shrink, thereby reducing the warping of the carrier 110.

[0057] See Figure 10 , and Figure 9The difference between the two embodiments is that package structure 100g includes interconnect structure 120a in addition to interconnect structure 120. Interconnect structures 120 and 120a are located on top surface 112 and bottom surface 114 of carrier 110, respectively. In other words, carrier 110 of package structure 100g is located between interconnect structures 120 and 120a. Furthermore, in this embodiment, the number of second through-holes O2 is five, and the cross-sectional area of first through-hole O1 is smaller than the total cross-sectional area of second through-holes O2.

[0058] Figures 11 to 13 FIG1 is a cross-sectional view showing the steps of forming a package structure 100h according to another embodiment of the present invention. Figure 11 and Figure 12 The carrier 110 can be formed with a first through hole O11 and a plurality of second through holes O21 and O22 by a drilling process. The first through hole O11 is close to the central area C of the carrier 110, and the second through holes O21 and O22 are close to the peripheral area P of the carrier 110. The positions and numbers of the first through hole O11 and the second through holes O21 and O22 can be changed according to different anti-warpage requirements. Figure 11 This is just an example.

[0059] In one embodiment, the carrier 110 has a single first through-hole O11 and second through-holes O21 and O22 of different diameters. The diameter d4 of the second through-hole O21 is greater than the diameter d3 of the second through-hole O22, and the diameter d1 of the first through-hole O11 is substantially the same as the diameter d3 of the second through-hole O22. In subsequent manufacturing processes, a plurality of metal fillers 130 may be filled into the first through-hole O11 and the second through-hole O21, such that the metal fillers 130 are located in the first through-hole O11 and the second through-hole O21 (i.e., in the first portion of the second through-hole), while no metal filler is located in the second through-hole O22 (i.e., in the second portion of the second through-hole). This design allows the cross-sectional area of the first through hole O11 without the metal filling material 130 (e.g., 0) to be smaller than the total cross-sectional area of the second through holes O21 and O22 without the metal filling material 130 (e.g., the total cross-sectional area of the second through hole O22), thereby changing the coefficient of thermal expansion (CTE) of the carrier 110 to improve warpage.

[0060] In this embodiment, the metal filler 130 may be made of copper, aluminum, or other appropriate metals, and the thermal expansion coefficient of the metal filler 130 is different from that of the carrier 110 . For example, the thermal expansion coefficient of the metal filler 130 is greater than that of the carrier 110 .

[0061] In another embodiment, the carrier 110 further includes a first through-hole O12 (shown by a dotted line). The first through-hole O12 has a diameter d1 and is located near the central region C of the carrier 110. A metal filler 130 is located in the first through-hole O11 and the second through-hole O21 (i.e., the first portion of the first through-hole and the first portion of the second through-hole), while the first through-hole O12 and the second through-hole O22 (i.e., the second portion of the first through-hole and the second portion of the second through-hole) are free of the metal filler 130. This design allows the total cross-sectional area of the first through-holes O11 and O12 excluding the metal filler 130 (e.g., the cross-sectional area of the first through-hole O12) to be smaller than the total cross-sectional area of the second through-holes O21 and O22 excluding the metal filler 130 (e.g., the total cross-sectional area of the second through-hole O22), thereby changing the thermal expansion coefficient of the carrier 110 and improving warpage.

[0062] See Figure 13 ,exist Figure 12 After the structure is formed, an interconnect structure 120 can be formed on the top surface 112 of the carrier 110, covering the first through-holes O11, O12, the second through-holes O21, O22, and the metal filler 130, thereby obtaining the package structure 100h. In this embodiment, the conductive lines 124 of the interconnect structure 120 can overlap and electrically connect with the metal filler 130 in a vertical direction, but this is not intended to limit the present invention.

[0063] Figures 14 to 16 sectional views of package structures 100i-100k according to various embodiments of the present invention are shown. Figure 14 , and Figure 13 The difference between the two embodiments is that the package structure 100i includes an interconnect structure 120a in addition to the interconnect structure 120. The interconnect structures 120 and 120a are located on the top surface 112 and bottom surface 114 of the carrier 110, respectively. In other words, the carrier 110 of the package structure 100i is located between the two interconnect structures 120 and 120a. In addition, in this embodiment, the first through-hole O11 and the right second through-hole O21 do not contain the metal filler 130, while the right second through-hole O22 is filled with the metal filler 130. This design allows the cross-sectional area of the first through-hole O11 without the metal filler 130 to be smaller than the total cross-sectional area of the second through-holes O21 and O22 without the metal filler 130, thereby changing the thermal expansion coefficient of the carrier 110 and improving warpage. In this embodiment, the two conductive lines 124 of the two interconnect structures 120 and 120a can be electrically connected to the two ends of the metal filler 130, thereby providing electrical continuity.

[0064] See Figure 15The package structure 100j includes a carrier 110, a plurality of metal fillers 130, and an interconnect structure 120. The carrier 110 has at least one first through-hole O1 and a plurality of second through-holes O2. The metal fillers 130 are located in each of the first through-hole O1 and the second through-holes O2. In other words, all of the first through-holes O1 and the second through-holes O2 are filled with the metal fillers 130. In this embodiment, the first through-hole O1 and the metal filler 130 therein have a diameter d1, and the second through-hole O2 and the metal filler 130 therein have a diameter d2. The diameter d1 of the metal filler 130 in the first through-hole O1 is smaller than the diameter d2 of the metal filler 130 in the second through-hole O2. With this design, the cross-sectional area of the metal filler 130 in the first through-hole O1 can be smaller than the total cross-sectional area of the metal filler 130 in the second through-hole O2, thereby reducing the warpage of the carrier 110. The interconnect structure 120 is located on the top surface 112 of the carrier 110 , and the conductive lines 124 of the interconnect structure 120 may overlap with the second through-holes O2 in a vertical direction.

[0065] See Figure 16 , and Figure 15 The difference between the two embodiments lies in that package structure 100k also includes an interconnect structure 120a and a larger number of second vias O2 and metal filler 130. Interconnect structures 120 and 120a are located on the top surface 112 and bottom surface 114 of carrier 110, respectively. In other words, carrier 110 of package structure 100k is located between the two interconnect structures 120 and 120a. This design allows the cross-sectional area of metal filler 130 in first via O1 to be smaller than the total cross-sectional area of metal filler 130 in second via O2, thereby reducing warpage of carrier 110.

[0066] The foregoing summarizes the features of several embodiments so that those skilled in the art can better understand the aspects of the present invention. Those skilled in the art will appreciate that they can easily use the present invention as a basis for designing or modifying other processes and structures to achieve the same purposes and / or achieve the same advantages as the embodiments described herein. Those skilled in the art will also appreciate that such equivalent constructions do not depart from the spirit and scope of the present invention, and that they may make various changes, substitutions, and modifications herein without departing from the spirit and scope of the present invention.

Claims

1. A packaging structure, comprising: A carrier having a plurality of first through holes and a plurality of second through holes, wherein the first through holes are close to a central region of the carrier, the second through holes are close to a peripheral region of the carrier, and a total cross-sectional area of the first through holes is smaller than a total cross-sectional area of the second through holes; at least one interconnection structure, located on the carrier and covering the first through holes and the second through holes; and A plurality of metal filling materials are respectively located in the first portions of the first through holes and the first portions of the second through holes, wherein the second portions of the first through holes and the second portions of the second through holes do not contain the metal filling materials, wherein the total cross-sectional area of the second portions of the first through holes is smaller than the total cross-sectional area of the second portions of the second through holes. 2 . The package structure according to claim 1 , wherein a diameter of each of the first through holes is the same as a diameter of each of the second through holes, and a density of the first through holes is smaller than a density of the second through holes. 3 . The package structure according to claim 1 , wherein a diameter of each of the first through holes is larger than a diameter of each of the second through holes, and the number of the first through holes is smaller than the number of the second through holes. 4 . The package structure according to claim 1 , wherein a diameter of each of the first through holes is smaller than a diameter of each of the second through holes, and the number of the first through holes is smaller than the number of the second through holes. 5 . The package structure according to claim 1 , wherein a diameter of each of the first through holes is smaller than a diameter of each of the second through holes, and the number of the first through holes is greater than the number of the second through holes.

6. The packaging structure as claimed in claim 1 comprises two interconnect structures, and the carrier is located between the two interconnect structures, wherein the two interconnect structures each comprise a dielectric layer and a conductive line located in the dielectric layer, and the two conductive lines of the two interconnect structures are respectively electrically connected to two ends of one of the metal filling materials. The package structure as claimed in claim 1 , wherein the thermal expansion coefficients of the metal filling materials are different from that of the carrier. 8 . The package structure as claimed in claim 1 , wherein a thermal expansion coefficient of the metal filling materials is greater than a thermal expansion coefficient of the carrier. 9 . The package structure as claimed in claim 1 , wherein a diameter of the metal filling material in the first portion of the first through-holes is smaller than a diameter of the metal filling materials in the first portion of the second through-holes. 10 . The package structure as claimed in claim 1 , wherein the interconnect structure comprises a dielectric layer and a conductive line in the dielectric layer, and one of the second through holes overlaps with the conductive line in a vertical direction. The package structure as claimed in claim 1 , wherein the first through holes and the second through holes are parallel to each other.

Images