Anti-reflection low-radiation glass and insulating glass

Abstract

The present invention discloses an anti-reflection low-radiation glass and insulating glass, wherein the anti-reflection low-radiation glass comprises a heat barrier layer group, a glass sheet and an anti-reflection layer group in sequence; the heat barrier layer group comprises a functional layer and a first protective layer in sequence in a direction away from the glass sheet, wherein the functional layer is used to block infrared light; the anti-reflection layer group comprises a plurality of refractive index medium layers and a second protective layer in sequence in a direction away from the glass sheet, wherein the plurality of refractive index medium layers are high refractive index medium layers and low refractive index medium layers arranged alternately, wherein the refractive index of the high refractive index medium layer is 2.1 to 2.5, and the refractive index of the low refractive index medium layer is 1.40 to 1.56; wherein the material of the first protective layer and the second protective layer comprises titanium nitride. The technical solution enables the glass to obtain high heat barrier performance and low reflection optical performance, while having low process difficulty and good machinability.

Description

Technical Field

[0001] The present invention relates to the technical field of glass manufacturing, in particular to anti-reflection low-radiation glass and insulating glass. Background Art

[0002] As building energy efficiency requirements increase, so too do the demands for architectural glass. At the same time, light pollution from curtain wall glass is gaining increasing attention, and controlling exterior reflections from architectural glass is also gaining increasing importance. Consequently, there is a growing demand for architectural glass with high energy efficiency and low reflectivity.

[0003] Among existing reports on anti-reflective, low-emissivity glass, Chinese patent application number 201920319233.6, titled "A Monolithic Anti-Reflective, Low-E Glass," offers a concept for a monolithic, low-emissivity glass. The film structure comprises, in order: a glass sheet, multiple dielectric layers, an infrared insulation layer, and multiple protective layers. The anti-reflective, low-emissivity glass achieves both anti-reflection and reduced emissivity, providing insulation. However, the film structure in this patent is relatively complex, leading to high production costs. Summary of the Invention

[0004] The main purpose of the present invention is to provide an anti-reflective low-emissivity glass and insulating glass, aiming to enable the glass to obtain high heat barrier performance and low reflective optical performance while having low process difficulty and good machinability.

[0005] To achieve the above-mentioned objectives, the present invention proposes an anti-reflection low-emissivity glass which comprises, in sequence, a heat-blocking layer group, a glass sheet, and an anti-reflection layer group; the heat-blocking layer group comprises, in sequence, a functional layer and a first protective layer in a direction away from the glass sheet, wherein the functional layer is used to block infrared light; the anti-reflection layer group comprises, in sequence, a plurality of refractive index medium layers and a second protective layer in a direction away from the glass sheet, wherein the plurality of refractive index medium layers are high refractive index medium layers and low refractive index medium layers arranged alternately, wherein the refractive index of the high refractive index medium layer is 2.1 to 2.5, and the refractive index of the low refractive index medium layer is 1.40 to 1.56; wherein the material of the first protective layer and the second protective layer comprises titanium nitride.

[0006] Optionally, the material of the functional layer includes indium tin oxide.

[0007] Optionally, the thermal barrier layer group further includes a first dielectric layer, a second dielectric layer, a metal layer, a third dielectric layer and a fourth dielectric layer, and in the direction away from the glass original sheet, the first dielectric layer, the second dielectric layer, the functional layer, the metal layer, the third dielectric layer, the fourth dielectric layer and the first protective layer are arranged in sequence; and / or, the high refractive index dielectric layer includes a first high refractive index dielectric layer and a second high refractive index dielectric layer, and the low refractive index dielectric layer includes a first low refractive index dielectric layer and a second low refractive index dielectric layer, and in the direction away from the glass original sheet, the first high refractive index dielectric layer, the first low refractive index dielectric layer, the second high refractive index dielectric layer, the second low refractive index dielectric layer and the second protective layer are arranged in sequence.

[0008] Optionally, the first dielectric layer is made of silicon nitride and has a thickness of 10 to 30 nm; and / or,

[0009] The material of the second dielectric layer includes silicon oxide, and the thickness is 13-45 nm; and / or,

[0010] The thickness of the functional layer is 55 to 105 nm; and / or,

[0011] The material of the metal layer includes nickel-chromium metal, and the thickness is 2-8 nm; and / or,

[0012] The material of the third dielectric layer includes silicon oxide, and the thickness is 15 to 36 nm; and / or,

[0013] The material of the fourth dielectric layer includes silicon nitride, and the thickness is 20-65 nm; and / or,

[0014] The thickness of the first protective layer is 4 to 10 nm; and / or,

[0015] The material of the first high refractive index medium layer includes niobium oxide or silicon nitride, and the thickness is 7 to 43 nm; and / or,

[0016] The material of the first low refractive index medium layer includes silicon oxide, and the thickness is 14 to 50 nm; and / or,

[0017] The material of the second high refractive index medium layer includes one of niobium oxide and silicon nitride, and the thickness is 68 to 150 nm; and / or,

[0018] The material of the second low-refractive-index medium layer includes silicon oxide, and the thickness is 38 to 129 nm; and / or,

[0019] The thickness of the second protective layer is 5-16 nm.

[0020] Optionally, the thickness of the first dielectric layer is 15 to 25 nm; and / or,

[0021] The thickness of the second dielectric layer is 21 to 37 nm; and / or,

[0022] The thickness of the functional layer is 68 to 93 nm; and / or,

[0023] The thickness of the metal layer is 4 to 6 nm; and / or,

[0024] The thickness of the third dielectric layer is 20 to 31 nm; and / or,

[0025] The thickness of the fourth dielectric layer is 31 to 54 nm; and / or,

[0026] The thickness of the first protective layer is 6 to 8 nm; and / or,

[0027] The thickness of the first high refractive index medium layer is 16 to 34 nm; and / or,

[0028] The thickness of the first low refractive index medium layer is 23 to 41 nm; and / or,

[0029] The thickness of the second high refractive index medium layer is 89 to 130 nm; and / or,

[0030] The thickness of the second low refractive index medium layer is 61 to 106 nm; and / or,

[0031] The thickness of the second protective layer is 8-13 nm.

[0032] Optionally, the visible light reflectivity of the anti-reflective low-emissivity glass is ≤5%.

[0033] Optionally, the anti-reflective low-emissivity glass has an emissivity of ≤0.15 and a heat transfer coefficient U value of ≤3.5 W / m2·K.

[0034] The present invention also provides an insulating glass, characterized in that the insulating glass comprises low-emissivity coated glass, an air layer and the anti-reflective low-emissivity glass as described above in sequence; wherein the film surface of the low-emissivity coated glass faces the air layer, and the anti-reflective layer group in the anti-reflective low-emissivity glass faces the air layer.

[0035] Optionally, the heat transfer coefficient U value of the insulating glass is reduced by 0.25 to 0.35 W / m2·K compared to the low-emissivity coated glass.

[0036] Optionally, on the glass surface of the low-emissivity coated glass facing away from the air layer, the visible light reflectivity is reduced by 1.5-2.5% compared with that of the low-emissivity coated glass.

[0037] In the technical solution of the present invention, a heat-blocking layer group and an anti-reflection layer group are respectively arranged on both sides of the glass original sheet of anti-reflection low-emissivity glass. By utilizing the characteristics of the functional layer to block infrared thermal radiation and the characteristics of the alternating arrangement of the high-refractive index medium layer and the low-refractive index medium layer, high heat-blocking performance and low-reflection optical performance can be obtained at the same time, and the difficulty of film layer design and process difficulty are reduced, the stability of the film layer is improved, and the product yield and processing flexibility are guaranteed. The first protective layer and the second protective layer are made of titanium nitride material with a high melting point, high hardness, good chemical stability and strong wear resistance, which has a good protective effect on the film layer and is conducive to subsequent processing such as cutting, edging, and tempering of the coated product, so that the glass can obtain high heat-blocking performance and low-reflection optical performance while having low process difficulty and good machinability. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying any creative work.

[0039] Figure 1 This is a schematic structural diagram of an embodiment of the anti-reflection and low-emissivity glass provided by the present invention;

[0040] Figure 2 This is a schematic structural diagram of an embodiment of the insulating glass provided by the present invention.

[0041] Description of Figure Numbers:

[0042] Label name Label name 1000 Insulating glass 200 air layer 300 Low-emissivity coated glass 100 Anti-reflective low-emissivity glass 10 Thermal barrier layer set 20 Glass original 11 First dielectric layer 30 Anti-reflection layer group 12 Second dielectric layer 31 First high refractive index medium layer 13 Functional layer 32 First low refractive index medium layer 14 Metal layer 33 Second high refractive index medium layer 15 The third dielectric layer 34 Second low refractive index medium layer 16 Fourth dielectric layer 35 Second protective layer 17 First protective layer

[0043] The purpose, features and advantages of the present invention will be further described with reference to the accompanying drawings and in conjunction with the embodiments. DETAILED DESCRIPTION

[0044] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0045] It should be noted that if the embodiments of the present invention involve directional indications (such as up, down, left, right, front, back, etc.), the directional indications are only used to explain the relative position relationship, movement status, etc. between the various components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indications will also change accordingly.

[0046] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present invention, the descriptions of "first", "second", etc. are only for descriptive purposes and cannot be understood as indicating or suggesting their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of such features. In addition, the meaning of "and / or" appearing throughout the text includes three parallel schemes. Taking "A and / or B" as an example, it includes scheme A, or scheme B, or a scheme in which A and B are satisfied at the same time. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in this field to implement. When the combination of technical solutions is mutually contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0047] As building energy efficiency requirements increase, so too do the demands for architectural glass. At the same time, light pollution from curtain wall glass is gaining increasing attention, and controlling exterior reflections from architectural glass is also gaining increasing importance. Consequently, there is a growing demand for architectural glass with high energy efficiency and low reflectivity.

[0048] Among existing reports on anti-reflective, low-emissivity glass, Chinese patent application number 201920319233.6, titled "A Monolithic Anti-Reflective, Low-E Glass," offers a concept for a monolithic, low-emissivity glass. The film structure comprises, in order: a glass sheet, multiple dielectric layers, an infrared insulation layer, and multiple protective layers. The anti-reflective, low-emissivity glass achieves both anti-reflection and reduced emissivity, providing insulation. However, the film structure in this patent is relatively complex, leading to high production costs.

[0049] In view of this, the present invention provides an anti-reflective low-emissivity glass and insulating glass, which aims to enable the glass to obtain high heat barrier performance and low-reflective optical performance while having low process difficulty and good machinability. Figure 1 This is an embodiment of the anti-reflection low-emissivity glass provided by the present invention. Figure 2 This is an embodiment of the insulating glass provided by the present invention.

[0050] In the embodiment of the present invention, please refer to Figure 1The present invention proposes an anti-reflection low-emissivity glass 100, which includes a heat-blocking layer group 10, a glass sheet 20, and an anti-reflection layer group 30 in sequence. The heat-blocking layer group 10 includes a functional layer 13 and a first protective layer 17 in the direction away from the glass sheet 20, and the functional layer 13 is used to block infrared light. The anti-reflection layer group 30 includes a plurality of refractive index medium layers and a second protective layer 35 in the direction away from the glass sheet 20. The plurality of refractive index medium layers are high refractive index medium layers and low refractive index medium layers arranged alternately. The refractive index of the high refractive index medium layer is 2.1 to 2.5, and the refractive index of the low refractive index medium layer is 1.40 to 1.56. The material of the first protective layer 17 and the second protective layer 35 includes titanium nitride.

[0051] In the technical solution of the present invention, the anti-reflection low-emissivity glass 100 is respectively provided with a heat barrier layer group 10 and an anti-reflection layer group 30 on both sides of the glass original sheet 20. By utilizing the characteristics of the functional layer 13 to block infrared thermal radiation and the characteristics of the alternating arrangement of the high refractive index medium layer and the low refractive index medium layer, high heat barrier performance and low reflection optical performance can be obtained at the same time, and the difficulty of film layer design and process difficulty are reduced, the stability of the film layer is improved, and the product yield and processing flexibility are guaranteed. The first protective layer 17 and the second protective layer 35 are made of titanium nitride material with high melting point, high hardness, good chemical stability and strong wear resistance, which has a good protective effect on the film layer and is conducive to the subsequent processing of the coated product such as cutting, edging, and tempering, so that the glass can obtain high heat barrier performance and low reflection optical performance while having low process difficulty and good machinability.

[0052] The present invention does not limit the material of the functional layer 13, and any material that can block infrared light can be used, such as metallic silver. In this embodiment, the material of the functional layer 13 includes indium tin oxide, which blocks infrared light and reduces radiation. At the same time, the indium tin oxide material will not be directly exposed to the air, thereby improving the stability of the film layer and facilitating subsequent processing.

[0053] Furthermore, the thermal barrier layer group 10 also includes a first dielectric layer 11, a second dielectric layer 12, a metal layer 14, a third dielectric layer 15 and a fourth dielectric layer 16. In the direction away from the glass original sheet 20, the first dielectric layer 11, the second dielectric layer 12, the functional layer 13, the metal layer 14, the third dielectric layer 15, the fourth dielectric layer 16 and the first protective layer 17 are arranged in sequence. With such an arrangement, multiple dielectric layers facilitate adjusting the film color of the thermal barrier layer group 10. The metal layer 14 protects the functional layer 13, thereby achieving a thermal barrier function while having good film processability.

[0054] In the anti-reflection layer group 30, the high-refractive-index dielectric layer includes a first high-refractive-index dielectric layer 31 and a second high-refractive-index dielectric layer 33, and the low-refractive-index dielectric layer includes a first low-refractive-index dielectric layer 32 and a second low-refractive-index dielectric layer 34. The first high-refractive-index dielectric layer 31, the first low-refractive-index dielectric layer 32, the second high-refractive-index dielectric layer 33, the second low-refractive-index dielectric layer 34, and the second protective layer 35 are arranged in sequence in a direction away from the glass substrate 20. Excessive refractive-index dielectric layers increase production costs, while too few refractive-index dielectric layers result in poor anti-reflection effects. The arrangement of the first high-refractive-index dielectric layer 31, the first low-refractive-index dielectric layer 32, the second high-refractive-index dielectric layer 33, and the second low-refractive-index dielectric layer 34 results in a better anti-reflection effect.

[0055] It should be noted that the thermal barrier layer group 10 and the anti-reflection layer group 30 can be set either alone or simultaneously. Obviously, setting them simultaneously brings the best technical effect.

[0056] In this embodiment, the material of the first dielectric layer 11 includes silicon nitride, with a thickness of 10 to 30 nm; the material of the second dielectric layer 12 includes silicon oxide, with a thickness of 13 to 45 nm; the thickness of the functional layer 13 is 55 to 105 nm; the material of the metal layer 14 includes nickel chromium, with a thickness of 2 to 8 nm; the material of the third dielectric layer 15 includes silicon oxide, with a thickness of 15 to 36 nm; the material of the fourth dielectric layer 16 includes silicon nitride, with a thickness of 20 to 65 nm; the thickness of the first protective layer 17 is 100 to 100 nm. The thickness of the first high-refractive-index dielectric layer 31 is 4 to 10 nm. The first high-refractive-index dielectric layer 31 is made of either niobium oxide or silicon nitride, with a thickness of 7 to 43 nm. The first low-refractive-index dielectric layer 32 is made of silicon oxide, with a thickness of 14 to 50 nm. The second high-refractive-index dielectric layer 33 is made of either niobium oxide or silicon nitride, with a thickness of 68 to 150 nm. The second low-refractive-index dielectric layer 34 is made of silicon oxide, with a thickness of 38 to 129 nm. The second protective layer 35 is 5 to 16 nm thick. Niobium oxide and silicon nitride are high-refractive-index materials, while silicon oxide is a low-refractive-index material. The alternating layers of high-refractive-index and low-refractive-index materials provide anti-reflection properties. Furthermore, the thickness of each layer is set as described above to achieve optimal anti-reflection and low-emissivity performance.

[0057] Furthermore, the thickness of the first dielectric layer 11 is 15-25 nm; the thickness of the second dielectric layer 12 is 21-37 nm; the thickness of the functional layer 13 is 68-93 nm; the thickness of the metal layer 14 is 4-6 nm; the thickness of the third dielectric layer 15 is 20-31 nm; the thickness of the fourth dielectric layer 16 is 31-54 nm; the thickness of the first protective layer 17 is 6-8 nm; the thickness of the first high-refractive-index dielectric layer 31 is 16-34 nm; the thickness of the first low-refractive-index dielectric layer 32 is 23-41 nm; the thickness of the second high-refractive-index dielectric layer 33 is 89-130 nm; the thickness of the second low-refractive-index dielectric layer 34 is 61-106 nm; and the thickness of the second protective layer 35 is 8-13 nm. By setting the thickness of each layer as described above, better anti-reflection and low-emissivity performance can be achieved.

[0058] In this embodiment, the anti-reflection low-emissivity glass 100 has a visible light reflectivity of ≤5%, has a relatively low reflectivity, and has a neutral color, thereby reducing light pollution.

[0059] Furthermore, the anti-reflective low-emissivity glass 100 has an emissivity of ≤0.15 and a heat transfer coefficient (U-value) of ≤3.5 W / m²·K. The U-value is defined as the amount of heat transferred per unit area from one side of the glass assembly to the other side per unit time when the temperature difference between the two sides of the glass assembly is 1°C, providing good thermal insulation. The definition of the U-value will be similar to that used in the following text and will not be further elaborated.

[0060] The present invention also provides a hollow glass 1000, such as Figure 2 As shown, the insulating glass 1000 includes a low-emissivity coated glass 300, an air layer 200, and the anti-reflective low-emissivity glass 100 described above in sequence; wherein, the film surface of the low-emissivity coated glass 300 faces the air layer 200, and the anti-reflective layer group 30 in the anti-reflective low-emissivity glass 100 faces the air layer 200. When used in a building, the low-emissivity coated glass 300 faces the outdoors, and the anti-reflective low-emissivity glass 100 faces the indoors, thereby further reducing the heat transfer coefficient.

[0061] In this embodiment, the heat transfer coefficient U value of the insulating glass 1000 is reduced by 0.25 to 0.35 W / m 2 ·K compared to the low-emissivity coated glass 300 , thereby achieving a good heat insulation effect.

[0062] Furthermore, on the glass surface of the low-emissivity coated glass 300 facing away from the air layer 200 , the visible light reflectivity is reduced by 1.5-2.5% compared with that of the low-emissivity coated glass 300 , thereby reducing light pollution.

[0063] In this embodiment, the anti-reflection low-emissivity glass 100 is manufactured by the following method:

[0064] S1, first clean and polish the glass sheet 20, dry it and place it in the magnetron sputtering area;

[0065] S2. Vacuum magnetron sputtering is performed on one surface of the glass original sheet 20 to form a thermal barrier layer group 10, and sputtering is performed in sequence to form a first dielectric layer 11, a second dielectric layer 12, a functional layer 13, a metal layer 14, a third dielectric layer 15, a fourth dielectric layer 16 and a first protective layer 17.

[0066] S3, after turning over the glass, it is cleaned and polished, and after drying, it is placed in the magnetron sputtering area;

[0067] S4. Vacuum magnetron sputtering is performed on the other surface of the glass original sheet 20 to form an anti-reflection layer group 30, and a first high refractive index dielectric layer 31, a first low refractive index dielectric layer 32, a second high refractive index dielectric layer 33, a second low refractive index dielectric layer 34 and a second protective layer 35.

[0068] Wherein, when vacuum magnetron sputtering of the heat barrier layer group 10 is performed in step S2, the vacuum degree of the magnetron sputtering is 1.3*10-3 mbar to 6.0*10-3 mbar.

[0069] The first dielectric layer 11 and the fourth dielectric layer 16 are deposited by sputtering in an argon-nitrogen atmosphere using a medium-frequency power supply and a rotating cathode. To ensure stable sputtering and avoid damage to the target material, a sputtering power of 10 to 80 kW is used. Specifically, the first dielectric layer 11 and the fourth dielectric layer 16 are made of silicon nitride, and the sputtering atmosphere is composed of Ar and N2.

[0070] The second and third dielectric layers 12 and 15 are deposited by sputtering in an argon-oxygen atmosphere using a medium-frequency power supply and a rotating cathode. To ensure stable sputtering and avoid damage to the target material, a sputtering power of 10 to 60 kW is used. Specifically, the second and third dielectric layers 12 and 15 are made of silicon oxide, and the sputtering atmosphere is composed of Ar and O₂.

[0071] Functional layer 13 is sputtered in an argon-oxygen atmosphere using a medium-frequency power supply and a rotating cathode system. To ensure stable sputtering and avoid damaging the target material, a sputtering power of 15 to 60 kW is used. Specifically, functional layer 13 is made of indium tin oxide (ITO), and the sputtering atmosphere is Ar.

[0072] Metal layer 14 is deposited as a transition layer using pulsed DC sputtering in a pure argon atmosphere. To ensure stable sputtering and avoid damaging the target material, a sputtering power of 1 to 10 kW is used. Specifically, metal layer 14 is made of nickel-chromium, and the sputtering atmosphere is Ar.

[0073] The first protective layer 17 is deposited by sputtering in an argon-nitrogen atmosphere using a medium-frequency power supply and a rotating cathode. The sputtering power used is 20-70 kW. Specifically, the material of the first protective layer 17 is titanium nitride, and the sputtering atmosphere is Ar and N2.

[0074] When vacuum magnetron sputtering is performed on the anti-reflection layer group 30 in step S4 , the vacuum degree of the magnetron sputtering is 1.3*10 −3 mbar to 6.0*10 −3 mbar.

[0075] The first and second high-refractive-index dielectric layers 31 and 33 are deposited by sputtering in an argon-nitrogen or argon-oxygen atmosphere using a medium-frequency power supply and a rotating cathode. To ensure stable sputtering and avoid damage to the target material, the sputtering power used is 10 to 80 kW. Specifically, the first and second high-refractive-index dielectric layers are made of niobium oxide, and the sputtering atmosphere is Ar and O2. The first and second high-refractive-index dielectric layers 31 and 33 are made of silicon nitride, and the sputtering atmosphere is Ar and N2.

[0076] The first and second low-refractive-index dielectric layers 32, 34 are deposited by sputtering in an argon-oxygen atmosphere using a medium-frequency power supply and a rotating cathode. To ensure stable sputtering and avoid damage to the target material, a sputtering power of 10 to 60 kW is used. Specifically, the first and second low-refractive-index dielectric layers 32, 34 are made of silicon oxide, and the sputtering atmosphere is composed of Ar and O₂.

[0077] The second protective layer 35 is deposited by sputtering in an argon-nitrogen atmosphere using a medium-frequency power supply and a rotating cathode. The sputtering power used is 20-70 kW. Specifically, the material of the second protective layer 35 is titanium nitride, and the sputtering atmosphere is Ar and N2.

[0078] The anti-reflection and low-emissivity glass 100 of the present invention is further described below with reference to specific embodiments. It should be noted that in the following embodiments, niobium oxide, silicon nitride, silicon oxide, nickel-chromium metal, indium tin oxide, and titanium nitride are represented by NbOx, SiNx, SiOx, NiCr, ITO, and TiN, respectively.

[0079] Example 1

[0080] The structure of the anti-reflective low-emissivity glass 100 includes:

[0081] The original glass sheet 20 is 6mm ultra-clear glass, and the heat-blocking layer group 10 is formed from the surface of the original glass sheet 20 to one side, wherein:

[0082] The first dielectric layer 11 is made of SiNx material and has a thickness of 16 nm;

[0083] The second dielectric layer 12 is made of SiOx material and has a thickness of 17 nm;

[0084] The functional layer 13 is made of ITO material with a thickness of 83 nm;

[0085] The metal layer 14 is made of NiCr material and has a thickness of 2 mm;

[0086] The third dielectric layer 15 is made of SiOx material and has a thickness of 23 nm;

[0087] The fourth dielectric layer 16 is made of SiNx material and has a thickness of 27 nm;

[0088] The first protective layer 17 is made of TiN material and has a thickness of 4 mm;

[0089] From the surface of the glass sheet 20 to the other side of the anti-reflection layer group 30,

[0090] The first high refractive index medium layer 31 is made of SiNx material and has a thickness of 16 nm;

[0091] The first low refractive index medium layer 32 is made of SiOx material and has a thickness of 42 nm;

[0092] The second high refractive index medium layer 33 is made of SiNx material and has a thickness of 118 nm;

[0093] The second low refractive index medium layer 34 is made of SiOx material and has a thickness of 59 nm;

[0094] The second protective layer 35 is made of TiN material and has a thickness of 5 nm;

[0095] The specific manufacturing process of each of the above film layers is as follows:

[0096] The SiNx layer deposition is carried out in an argon-oxygen atmosphere using a medium-frequency power supply and a rotating cathode. The target material is a silicon-aluminum target. The power of the vacuum magnetron sputtering equipment is 20-70kW. The sputtering atmosphere is Ar and N2. The vacuum degree of the magnetron sputtering is 2.8*10-3mbar.

[0097] The SiOx layer deposition is carried out in an argon-oxygen atmosphere using a medium-frequency power supply and a rotating cathode. The target material is a silicon-aluminum target. The power of the vacuum magnetron sputtering equipment is 30-60kW. The sputtering atmosphere is Ar and O2. The vacuum degree of the magnetron sputtering is 3*10-3mbar.

[0098] The ITO layer deposition is carried out in an argon-oxygen atmosphere using a medium-frequency power supply and a rotating cathode. The target material is an indium tin oxide target. The power of the vacuum magnetron sputtering equipment is 10-60kW, the sputtering atmosphere is Ar, and the vacuum degree of the magnetron sputtering is 2.5*10-3mbar.

[0099] The NiCr layer is deposited using a DC power supply plus pulsed sputtering in an argon-oxygen atmosphere. The target material is a nickel-chromium target. The power of the vacuum magnetron sputtering equipment is 2-8kW, the sputtering atmosphere is Ar, and the vacuum degree of the magnetron sputtering is 2.5*10-3mbar.

[0100] TiN layer deposition is carried out in an argon-oxygen atmosphere using a medium-frequency power supply and a rotating cathode. The target material is a titanium target. The power of the vacuum magnetron sputtering equipment is 20-70kW. The sputtering atmosphere is Ar and N2. The vacuum degree of the magnetron sputtering is 2.5*10-3mbar.

[0101] The anti-reflection low-emissivity glass 100 has a visible light reflectivity of 4.76%, which is relatively low, and a neutral color. The anti-reflection low-emissivity glass 100 has a single piece emissivity of 0.15 and a U value of 3.41 W / m2·K.

[0102] After the tempering heat treatment, the anti-reflection low-emissivity glass 100 does not peel off or get scratched, and the film structure is stable. The hardness test result is 7H.

[0103] The anti-reflective low-emissivity glass 100 is combined with the low-emissivity coated glass 300 (Low-E coated glass) to form an insulating glass 1000. In comparison, the outdoor visible light reflectivity is reduced by 2.1%, and the heat transfer coefficient U value is reduced by 0.27 W / m2·K.

[0104] Example 2

[0105] The structure of the anti-reflective low-emissivity glass 100 includes:

[0106] The original glass sheet 20 is 6mm ultra-clear glass, and the heat-blocking layer group 10 is formed from the surface of the original glass sheet 20 to one side, wherein:

[0107] The first dielectric layer 11 is made of SiNx material and has a thickness of 21 nm;

[0108] The second dielectric layer 12 is made of SiOx material and has a thickness of 24 nm;

[0109] The functional layer 13 is made of ITO material with a thickness of 76 nm;

[0110] The metal layer 14 is made of NiCr material and has a thickness of 3 mm;

[0111] The third dielectric layer 15 is made of SiOx material and has a thickness of 21 nm;

[0112] The fourth dielectric layer 16 is made of SiNx material and has a thickness of 34 nm;

[0113] The first protective layer 17 is made of TiN material and has a thickness of 4 mm.

[0114] From the surface of the glass sheet 20 to the other side of the anti-reflection layer group 30,

[0115] The first high refractive index medium layer 31 is made of NbOx material and has a thickness of 13 nm;

[0116] The first low refractive index medium layer 32 is made of SiOx material and has a thickness of 41 nm;

[0117] The second high refractive index medium layer 33 is made of NbOx material and has a thickness of 110 nm;

[0118] The second low refractive index medium layer 34 is made of SiOx material and has a thickness of 74 nm;

[0119] The second protective layer 35 is made of TiN material and has a thickness of 5 nm;

[0120] The specific manufacturing process of each of the above film layers is as follows:

[0121] The NbOx layer deposition is carried out in an argon-oxygen atmosphere using a medium-frequency power supply and a rotating cathode. The target material is a niobium oxide target. The vacuum magnetron sputtering equipment has a power of 20 to 70 kW, the sputtering atmosphere is Ar and O2, and the vacuum degree of the magnetron sputtering is 2.5*10-3 mbar.

[0122] The SiNx layer deposition is carried out in an argon-oxygen atmosphere using a medium-frequency power supply and a rotating cathode. The target material is a silicon-aluminum target. The power of the vacuum magnetron sputtering equipment is 20-70kW. The sputtering atmosphere is Ar and N2. The vacuum degree of the magnetron sputtering is 2.8*10-3mbar.

[0123] The SiOx layer deposition is carried out in an argon-oxygen atmosphere using a medium-frequency power supply and a rotating cathode. The target material is a silicon-aluminum target. The power of the vacuum magnetron sputtering equipment is 30-60kW. The sputtering atmosphere is Ar and O2. The vacuum degree of the magnetron sputtering is 3*10-3mbar.

[0124] The ITO layer deposition is carried out in an argon-oxygen atmosphere using a medium-frequency power supply and a rotating cathode. The target material is an indium tin oxide target. The power of the vacuum magnetron sputtering equipment is 10-60kW, the sputtering atmosphere is Ar, and the vacuum degree of the magnetron sputtering is 2.5*10-3mbar.

[0125] The NiCr layer is deposited using a DC power supply plus pulsed sputtering in an argon-oxygen atmosphere. The target material is a nickel-chromium target. The power of the vacuum magnetron sputtering equipment is 2-8kW, the sputtering atmosphere is Ar, and the vacuum degree of the magnetron sputtering is 2.5*10-3mbar.

[0126] TiN layer deposition is carried out in an argon-oxygen atmosphere using a medium-frequency power supply and a rotating cathode. The target material is a titanium target. The power of the vacuum magnetron sputtering equipment is 20-70kW. The sputtering atmosphere is Ar and N2. The vacuum degree of the magnetron sputtering is 2.5*10-3mbar.

[0127] The anti-reflection low-emissivity glass 100 has a visible light reflectivity of 4.61%, which is relatively low, and a neutral color. The anti-reflection low-emissivity glass 100 has a single piece emissivity of 0.15 and a U value of 3.37 W / m2·K.

[0128] After the tempering heat treatment, the anti-reflection heat-insulating glass for buildings does not peel off or get scratched, and the film structure is stable. The hardness test result is 7H.

[0129] The anti-reflective low-emissivity glass 100 is combined with the low-emissivity coated glass 300 Low-E coated glass to form an insulating glass 1000. In comparison, the outdoor visible light reflectivity is reduced by 2.3%, and the heat transfer coefficient U value is reduced by 0.31 W / m2·K.

[0130] The above are only preferred embodiments of the present invention and are not intended to limit the patent scope of the present invention. All equivalent structural transformations made based on the contents of the present invention's description and drawings, or direct / indirect applications in other related technical fields, are included in the patent protection scope of the present invention.

Claims

1. An anti-reflection low-emissivity glass, characterized in that: The anti-reflection low-emissivity glass comprises a heat-blocking layer group, a glass sheet and an anti-reflection layer group in sequence; The heat-blocking layer group includes a functional layer and a first protective layer in sequence in a direction away from the glass original sheet, wherein the functional layer is used to block infrared light; The anti-reflection layer group includes a plurality of refractive index medium layers and a second protective layer in sequence in a direction away from the glass original sheet, wherein the plurality of refractive index medium layers are high refractive index medium layers and low refractive index medium layers arranged alternately, the refractive index of the high refractive index medium layer is 2.1 to 2.5, and the refractive index of the low refractive index medium layer is 1.40 to 1.56; The heat-blocking layer group further includes a first dielectric layer, a second dielectric layer, a metal layer, a third dielectric layer and a fourth dielectric layer. In a direction away from the glass original sheet, the first dielectric layer, the second dielectric layer, the functional layer, the metal layer, the third dielectric layer, the fourth dielectric layer and the first protective layer are arranged in sequence; The high refractive index medium layer includes a first high refractive index medium layer and a second high refractive index medium layer, and the low refractive index medium layer includes a first low refractive index medium layer and a second low refractive index medium layer. In the direction away from the glass original sheet, the first high refractive index medium layer, the first low refractive index medium layer, the second high refractive index medium layer, the second low refractive index medium layer and the second protective layer are arranged in sequence.

2. The anti-reflection low-emissivity glass according to claim 1, characterized in that: The material of the functional layer includes indium tin oxide.

3. The anti-reflection low-emissivity glass according to claim 1, characterized in that: The material of the first dielectric layer includes silicon nitride, and the thickness is 10-30 nm; and / or, The material of the second dielectric layer includes silicon oxide, and the thickness is 13-45 nm; and / or, The thickness of the functional layer is 55 to 105 nm; and / or, The material of the metal layer includes metal nickel-chromium, and the thickness is 2-8 nm; and / or, The material of the third dielectric layer includes silicon oxide, and the thickness is 15-36 nm; and / or, The material of the fourth dielectric layer includes silicon nitride, and the thickness is 20-65 nm; and / or, The thickness of the first protective layer is 4 to 10 nm; and / or, The material of the first high refractive index medium layer includes niobium oxide or silicon nitride, and the thickness is 7-43 nm; and / or, The material of the first low refractive index medium layer includes silicon oxide, and the thickness is 14-50 nm; and / or, The material of the second high refractive index medium layer includes niobium oxide or silicon nitride, and the thickness is 68-150 nm; and / or, The material of the second low refractive index medium layer includes silicon oxide, and the thickness is 38-129 nm; and / or, The thickness of the second protective layer is 5-16 nm.

4. The anti-reflection low-emissivity glass according to claim 3, characterized in that: The thickness of the first dielectric layer is 15-25 nm; and / or, The thickness of the second dielectric layer is 21-37 nm; and / or, The thickness of the functional layer is 68 to 93 nm; and / or, The thickness of the metal layer is 4 to 6 nm; and / or, The thickness of the third dielectric layer is 20-31 nm; and / or, The thickness of the fourth dielectric layer is 31-54 nm; and / or, The thickness of the first protective layer is 6-8 nm; and / or, The thickness of the first high refractive index medium layer is 16-34 nm; and / or, The thickness of the first low refractive index medium layer is 23-41 nm; and / or, The thickness of the second high refractive index medium layer is 89-130 nm; and / or, The thickness of the second low refractive index medium layer is 61-106 nm; and / or, The thickness of the second protective layer is 8-13 nm.

5. The anti-reflection low-emissivity glass according to any one of claims 1 to 4, characterized in that: The visible light reflectivity of the anti-reflection low-emissivity glass is ≤5%.

6. The anti-reflection low-emissivity glass according to any one of claims 1 to 4, characterized in that: The emissivity of the anti-reflection low-emissivity glass is ≤0.15, and the heat transfer coefficient U value is ≤3.5W / m 2 ·K.

7. A hollow glass, characterized in that: The insulating glass comprises: Low-e coated glass; air layer; and, The anti-reflective low-emissivity glass according to any one of claims 1 to 6; Wherein, the film surface of the low-emissivity coated glass faces the air layer, and the anti-reflection layer group in the anti-reflection low-emissivity glass faces the air layer.

8. The insulating glass according to claim 7, characterized in that: The heat transfer coefficient U value of the insulating glass is reduced by 0.25 to 0.35 W / m compared to the low-emissivity coated glass. 2 ·K.

9. The insulating glass according to claim 7, characterized in that: On the glass surface of the low-emissivity coated glass that is away from the air layer, the visible light reflectivity is reduced by 1.5-2.5% compared with that of the low-emissivity coated glass.

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