Hybrid sensor including plasmon resonator

Abstract

A semiconductor structure includes a channel (310) connecting a source (302) on a semiconductor substrate (312) and a drain (304) on the semiconductor substrate (312), wherein the channel (310) includes a plasmon resonator. A sensor includes a plasmon film, a semiconductor structure, and an electrical connection between the plasmon film and a gate of the semiconductor structure, wherein the plasmon film includes sensitivity to a known analyte, and the semiconductor structure includes a source (302) and a drain (304) of a field effect transistor. A method of forming a sensor includes forming a field effect transistor ("FET") on a semiconductor substrate (312), the field effect transistor including a source (302), a drain (304), and a gate, wherein the gate includes a plasmon resonator.

Description

Technical Field

[0001] The present invention relates generally to sensors and, more particularly, to multimodal sensors combining electrical and optical sensors. Background Art

[0002] The sensing of chemical and biological elements can be used for health monitoring and environmental monitoring. Health monitoring is important for assessing and helping people with their personal health needs for personal use or in health care facilities. The monitoring of chemical and biological elements in the environment is important for environmental safety monitoring and safety considerations. It is desirable that the sensor has high sensitivity to these elements, and it is also desirable to send the sensed information remotely to a remote monitoring point by wired or wireless means. Summary of the invention

[0003] According to one embodiment of the present invention, a semiconductor structure is provided, wherein the semiconductor structure comprises a channel connecting a source electrode on a semiconductor substrate and a drain electrode on the semiconductor substrate, wherein the channel comprises a plasmon resonator.

[0004] According to another embodiment, a sensor is provided. The sensor includes a plasmon film, a semiconductor structure, and an electrical connection between the plasmon film and a gate of the semiconductor structure, wherein the plasmon film includes sensitivity to a known analyte, and the semiconductor structure includes a source and a drain of a field effect transistor.

[0005] According to another embodiment, a method of forming a sensor is provided. The method includes forming a field effect transistor ("FET") on a semiconductor substrate, the field effect transistor including a source, a drain, and a gate, wherein the gate includes a plasmon resonator. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] These and other objects, features and advantages of the present invention will become apparent from the following detailed description of illustrative embodiments thereof, which description is to be read in conjunction with the accompanying drawings. The various features of the drawings are not drawn to scale, as the illustrations are intended to facilitate understanding of the present invention by those skilled in the art in conjunction with the detailed description. In the drawings:

[0007] Figure 1 shows a graph according to an embodiment;

[0008] Figure 2 A block diagram showing components of a Fourier transform infrared spectrometer according to an embodiment is shown;

[0009] Figure 3A and Figure 3B 1. A cross-sectional view and a top view of a semiconductor according to an embodiment are respectively shown;

[0010] Figure 4Ashows a cross-sectional view of a semiconductor according to an embodiment;

[0011] Figure 4B shows a cross-sectional view of a semiconductor according to an embodiment;

[0012] Figure 5 shows a cross-sectional view of a semiconductor according to an embodiment;

[0013] Figure 6 shows a cross-sectional view of a semiconductor according to an embodiment;

[0014] Figure 7 A flow chart showing a method of performing a sensing process according to an embodiment is shown;

[0015] Figure 8 shows a block diagram of internal and external components of a computer and a server according to an embodiment;

[0016] Fig. 9 shows a cloud computing environment according to an embodiment; and

[0017] Fig.10 An abstract model layer according to an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0018] Detailed embodiments of the claimed structures and methods are disclosed herein; however, it is understood that the disclosed embodiments are merely illustrative of the claimed structures and methods that may be implemented in various forms. However, the present invention may be implemented in many different forms and should not be construed as limited to the exemplary embodiments set forth herein. In the description, details of well-known features and techniques may be omitted to avoid unnecessarily obscuring the presented embodiments.

[0019] Embodiments of the present invention relate to sensors, and more particularly to multimodal sensors that combine electrical and optical sensors. The exemplary embodiments described below provide a system, method, and program product to combine the speed and sensitivity of electrical sensors with the chemical sensitivity of optical sensors by using a material that has dual uses as a channel for electrical sensors and as a plasmonic resonator. Embodiments of the present invention have the ability to improve the technical fields of medical testing and environmental monitoring.

[0020] As previously mentioned, health or medical monitoring is important for the assessment and assistance of personal health needs of people using personal devices or in health care facilities. Monitoring of chemical and biological elements in the environment is important for environmental safety monitoring and security considerations. It is desirable that the sensor has high sensitivity to these elements, and it is also desirable to send the sensed information remotely to a remote monitoring point by wired or wireless means.

[0021] Bioanalytical sensors are used for health assessment and health monitoring. Examples of analytes that can be used for health assessment include glucose, cholesterol, calcium, blood cell counts, and vitamin levels.

[0022] Environmental sensors are useful for monitoring air quality and can be used for leak detection and monitoring hazardous pollutants. This helps protect the environment and human health. Examples of analytes that can be sensed in the environment include different types of gases such as methane, carbon dioxide, hydrogen chloride, pH, carbon monoxide, or explosive gases.

[0023] Wireless digital sensors can electronically send information from one location to another. This information can be stored for comparison between locations and over a period of time.

[0024] Electrical sensors can sense using changes in charge, current, or voltage. The charge on the sensing surface can cause a change in the current between the source and drain of a field effect transistor (hereinafter referred to as a "FET") of the electrical sensor. In an embodiment, the electrical sensor may use one or more field effect transistors (hereinafter referred to as "FET"). Alternatively, the electrical sensor may use one or more bipolar junction transistors (hereinafter referred to as "BJT"). FET sensors are sensitive to the charge (Q) on the sensing surface. The sensing surface may be a gate dielectric surface or a gate electrode. Ions and many biomolecules (proteins, exosomes, viruses) have a charge on them. When ions or biomolecules bind to the sensing surface, this causes the surface potential to change, which in turn causes the sensing current to change. Specificity is achieved by functionalizing the sensing surface so that only the target analyte will bind to it. As a result of the analyte or reactant, the sensing surface may become more conductive or less conductive. The advantages of using electrical sensors include speed and sensitivity.

[0025] Optical sensors use Fourier transform infrared spectroscopy (hereinafter referred to as "FTIR") to measure the range of wavelengths in the infrared region absorbed by the material being tested. A broadband light source passes through an interferometer, through the sample to an infrared detector, which measures the range of wavelengths in the infrared region absorbed by the sample or device being tested. The infrared absorption wavelength band identifies the molecular components and structures in the sample to identify the analytes present in the sample. Molecules can be sensitively and specifically identified and detected by the infrared spectrum of their molecular vibrations / rotations. FTIR can identify the concentration of analytes present in the sample.

[0026] When a molecule is close to a plasmon resonator / antenna (typically tens of nanometers away), its absorption can be radically enhanced by the Purcell effect due to the high concentration of optical modes near the resonator. In the infrared, this effect is called surface-enhanced infrared absorption (SEIRA) and is similar to the well-known surface-enhanced Raman scattering (SERS) effect. When SEIRA is used, the light field is spatially concentrated by the plasmon resonance at a molecule, thereby enhancing the absorption of that molecule.

[0027] Plasmon resonators can be made of both metals and highly doped semiconductors, and can include low-dimensional materials. Low-dimensional materials are materials with sufficiently low charge density that the electric field is not screened. Their resonant frequency is a function of the material, geometry, and charge density.

[0028] In an embodiment, a material for a multi-mode sensor can be selected that has a dual role as a semiconductor material for an electrical sensor and as a good plasmon resonator for an optical sensor. The material properties required for semiconductor materials include good transistor channel materials, high mobility, low charge density, and low dimensionality so that the electric field is not shielded. The material properties required for plasmon resonators include materials that act as good optical cavities, low light losses, low dimensionality, and have the correct charge density. The correct charge enables the plasmon resonator to have a response in the infrared region. The material can be specifically made to be a good plasmon resonator for a specific molecule or analyte.

[0029] In embodiments, the material may include silicon, carbon nanotubes, and graphene. Each of these materials may have a dual role as a channel material for a FET in an electrical sensor and as a plasmon resonator. Using the material as a channel material for a FET allows the light field to be concentrated through its plasmon resonator properties.

[0030] Graphene is a two-dimensional crystal of carbon atoms that can be used for gas, chemical and biological sensors. Carbon nanotubes are rolled-up sheets of graphene. Due to their large surface-to-volume ratio and electronic sensitivity to surface molecules, graphene and carbon nanotubes can be used to sense analytes, such as environmental materials. The electronic sensitivity of graphene and carbon nanotubes can be manifested as changes in their resistance and conductivity when molecules are absorbed from the environment. Graphene can be processed, functionalized or engineered to detect specific molecules or analytes. Graphene and carbon nanotubes can be used to sense analytes and to provide digital signals.

[0031] According to an illustrative embodiment, the following Figures 1 to 10 The accompanying drawings in detail describe a method for manufacturing a sensor.

[0032] Reference now Figure 1, a graph according to an exemplary embodiment is shown. The graph shows the current as a function of the gate voltage between the source and drain of a field effect transistor (hereinafter referred to as "FET") sensor, which is made with a graphene or carbon nanotube gate channel that is sensitive to a specific analyte. As shown in the graph, as the gate voltage of the FET between the source and drain increases, the current between the source and drain of the FET increases. The solid line in the graph shows the operating conditions in the absence of a specific analyte. In the absence of a specific analyte, a first current I1 appears at a gate voltage of V1. The dotted line in the graph depicts the offset of the gate voltage relative to the current characteristic curve when affected by the presence of a low concentration of a specific analyte. At a low concentration of a specific analyte, a second current I2 lower than the first current I1 appears at the gate voltage of V1. The dotted line in the graph depicts the offset of the gate voltage relative to the current characteristic curve when affected by the presence of a high concentration of a specific analyte. At a high concentration of a specific analyte, a third current I3 lower than the second current I2 appears at the gate voltage of V1. Thus, when a gate voltage of V1 is provided, the current measurement between the source and drain will indicate the concentration of the particular analyte present.

[0033] In an embodiment, the FET channel may include graphene or carbon nanotubes, and the absorption of the analyte on the graphene or carbon nanotubes may affect the current versus gate voltage of the FET. By measuring the current at a specific gate voltage, the FET may be used as a sensor. The dashed and dotted lines in the graph each depict the shift in the current characteristic relative to the gate voltage curve when affected by the presence of low and high concentrations of a chemical molecule or analyte.

[0034] Specifically, when the gate voltage is V1 and the measured current is I1, this indicates that there is no amount of analyte. When the gate voltage is V1 and the measured current is I2, this indicates that there is a small amount of analyte. When the gate voltage is V1 and the measured current is I3, this indicates that there is a large amount of analyte.

[0035] The function of gate voltage with respect to current varies with the concentration of analyte present. In this way, the concentration of analyte at a particular voltage difference between the source and drain electrodes can be determined.

[0036] Graphene or carbon nanotubes can influence Figure 1The electrical properties shown, graphene or carbon nanotubes can be surface functionalized so that they are sensitized to absorb specific analytes by adding other molecules to the nanotubes. The presence of a specific analyte will affect the conductive properties of the graphene or carbon nanotubes. In this way, graphene or carbon nanotubes can be used as medical or environmental sensors. Depending on the absence or concentration of a specific analyte, the current characteristics in the graphene or carbon nanotubes will be different. In an embodiment, the graphene or carbon nanotube can be made into a channel between the source and drain of a FET.

[0037] In an embodiment, the analyte may be an acidic gas such as hydrogen chloride (HCl), glucose, carbon monoxide, or an explosive gas.

[0038] In an alternative embodiment, the current between the source and the drain for a particular gate voltage of a FET with a plasmon resonator may be higher than the current between the source and the drain for a particular gate voltage of a FET without a plasmon resonator.

[0039] Reference now Figure 2 , a block diagram of a Fourier transform infrared (hereinafter referred to as "FTIR") spectrometer 200 according to an embodiment is shown. The FTIR spectrometer 200 is an optical sensor and includes a broadband light source 202, a beam splitter 204, a first reflector 206, a second reflector 208, a mounting surface 212 for a device under test (hereinafter referred to as "DUT") 300, and a detector 210. As described above, the broadband light source 202 transmits light to the beam splitter 204, which turns the light to the first reflector 206 and the second reflector 208. The first reflector 206 and the second reflector 207 reflect the light back to the beam splitter 204. The beam splitter 204 guides the light to the DUT 300 mounted on the mounting surface 212. The detector 210 measures the range of wavelengths in the infrared region absorbed by the DUT 300, identifying whether an analyte is present in the DUT 300. The detector 210 may include a computing device.

[0040] As described above, FTIR can identify the concentration of analytes present in DUT 300 .

[0041] Reference now Figure 3A and Figure 3B , shows a DUT 300 according to an embodiment. Figure 3A is a cross-sectional view of the DUT 300, and Figure 3B yes Figure 3A Top view along section line AA. DUT 300 may be a hybrid field effect transistor (hereinafter referred to as a "FET") that has been processed to detect a specific molecule or analyte. DUT 300 includes source 302, drain 304, channel 310, substrate 312, dielectric 314, insulator 316, and top layer 320.

[0042] DUT 300 may be fabricated using conventional FET methods and is hybrid due to modification of materials and patterning of channel 310, allowing channel 310 to function as a plasmon resonator that has been processed to detect specific molecules or analytes.

[0043] Substrate 312 can be made of any of several known semiconductor materials, such as silicon on insulator (SOI) wafers. Other non-limiting examples include bulk silicon, silicon, germanium, silicon-germanium alloys, silicon carbide, silicon-germanium carbide alloys, and compound (e.g., III-V and II-VI) semiconductor materials. Non-limiting examples of compound semiconductor materials include gallium arsenide, indium arsenide, and indium phosphide. Typically, substrate 312 can be about, but not limited to, several hundred microns thick. For example, substrate 312 can include a thickness ranging from 0.5 mm to about 1.5 mm.

[0044] In an embodiment, DUT 300 may be fabricated using existing fabrication techniques on substrate 312. For example, DUT 300 may be fabricated in a conventional manner with an open space not connected to source 302 and drain 304 so that channel 310 may be added later after insulator or dielectric 316 is fabricated.

[0045] In an embodiment, dielectrics 314 and 316 may include SiO 2 , HfO 2 , or other dielectric materials.

[0046] Channel 310 includes a plasmon resonator that has been sensitized to absorb a specific analyte. The presence of a specific analyte will affect the conductivity of the plasmon resonator. In this way, the plasmon resonator can be used as a sensor. Depending on the presence or absence of a specific analyte, the conductive properties in the plasmon resonator will be different. In this embodiment, the plasmon resonator can be used as channel 310 and as a gate between source 302 and drain 304.

[0047] Channel 310 may include materials such as silicon, graphene, gold, silver, carbon nanotubes, and metal oxides. Channel 310 may be patterned during the semiconductor manufacturing process. This patterning process may utilize conventional photolithography or electron beam lithography. The channel material may first be deposited onto a substrate, then a polymer resist may be spin-coated onto the substrate, followed by patterning the resist by photo or electron beam lithography. Next, dry or wet etching of the channel material may be performed in unwanted areas, and finally the resist may be stripped off.

[0048] As described above, graphene or carbon nanotubes can be treated, functionalized, or carbon engineered to detect specific molecules or analytes. In an embodiment, a plasmon resonator including graphene or carbon nanotubes can be used as a sensor. The plasmon resonator will have different conductive properties when it is exposed to the analyte than when the plasmon resonator is not exposed to the analyte. In another embodiment, a FET can include a graphene channel. The FET can have different voltage thresholds and current responses, depending on the voltage between the source and drain when it is exposed to the analyte and the concentration of the analyte, compared to when the FET is not exposed to the analyte.

[0049] In an embodiment, the top layer 320 may include a solution of the concentration of the analyte being tested, such as a blood sample for testing a medical test. The DUT 300 may have a channel 310 exposed to the solution, and other components of the DUT 300 may be protected from the solution by an insulator 316. The solution may have the analyte dissolved therein. In this manner, the plasmon resonator of the channel 310 is exposed to a solution for determining the concentration or amount of the analyte in the blood sample.

[0050] In an embodiment, top layer 320 may be an open air environment for environmental testing. DUT 300 may have channel 310 exposed to a solution, and other components of DUT 300 may be protected from the solution by insulator 316. In this way, the plasmon resonator of channel 310 is exposed to an open air environment to determine if an analyte is present.

[0051] Reference now Figure 4A , shows a front view of a DUT 400 according to an embodiment. DUT 400 may be substantially the same as DUT 300, however DUT 400 may include a FET array including FET 300A, FET 300B, and FET 300C. Each FET in the FET array may have been configured as a sensor for a different analyte, each FET being designed to perform as a plasmon resonator when exposed to the specific analyte for which it is designed.

[0052] In an embodiment, the top layer 320 can be exposed to air, and each FET in the FET array can test for a different analyte.

[0053] Reference now Figure 4B, a front view of a DUT 410 according to an embodiment is shown. DUT 410 may be substantially the same as DUT 300, however DUT 410 may include a FET array including FET 300D, FET 300E, and FET 300F. In an embodiment, top layer 320 may be exposed to air, while FET 300D and FET 300E are not exposed to air. Top layer 340 may be an insulator covering channel 310 of FET 300F, and may be used as a control FET that is not exposed to air.

[0054] In an embodiment, each of the FET array may be configured as a sensor for a different analyte, with each FET being designed to perform as a plasmon resonator when exposed to the specific analyte for which it is designed.

[0055] In an alternative embodiment, FET 300D, FET 300E, and FET 300F may be designed to perform as plasmon resonators for the same analyte, and the use of duplicate FETs and control FETs may be used to confirm the concentration and presence of the analyte.

[0056] In an embodiment, the DUT 410 may include a combination of control plasmon resonator FETs that are not exposed to any analyte, and a combination of repeating plasmon resonator FETs or unique plasmon resonator FETs that are exposed to possible analytes, either in open air or in solution.

[0057] In an embodiment, the array may contain thousands of FETs.

[0058] Reference now Figure 5 , shows a device under test (hereinafter referred to as “DUT”) 500 and a field effect transistor (hereinafter referred to as “FET”) 550 according to an embodiment. Figure 5 Shown is a cross-sectional view of DUT 500 and a cross-sectional view of FET 550. DUT 500 together with FET 550 may be an alternative embodiment of a device for detecting a specific molecule or analyte.

[0059] DUT 500 includes substrate 512, dielectric 514, plasmon film 510, and top layer 520. FET 550 includes substrate 552, source 554, silicon layer 556, drain 558, gate dielectric 560, and gate 562. Similar named components of DUT 500 and FET 550 may have the same functions and may be formed and include the same materials as components of DUT 300. Plasmon film 510 is physically and electrically connected to gate 562 of FET 550.

[0060] Plasmonic film 510 may function as a plasmon resonator and may be sensitized to absorb a specific analyte as previously described with respect to channel 310 of DUT 300. Plasmonic film 510 may include silicon, graphene, gold, silver, carbon nanotubes, metal oxides, and the like.

[0061] FET 550 can be fabricated using conventional methods. Plasmon film 510 is conductive and forms a common sensing surface for both the optical sensor (i.e., FTIR spectrometer 200) and the electrical sensor (i.e., measurement of the voltage threshold and current of FET 550 as the voltage between source 554 and drain 558 increases).

[0062] Plasmonic film 510 is in contact with top layer 520. In an embodiment, top layer 520 may include a solution of the concentration of the analyte being tested, such as a blood sample for testing a medical test. DUT 500 may have plasmonic film 510 exposed to a solution, which may have an analyte dissolved therein.

[0063] In an embodiment, top layer 320 may be an open air environment for environmental testing.

[0064] Advantages of having the FETs 550 electrically connected rather than physically residing within the FTIR 200 may include having one plasmonic film 510 connected to more than one FET 550. The plasmonic film 510 may be connected to a group of two or more FETs 550. Each FET in a group of two or more FETs 550 may be sensitive to a specific analyte, or may be used as a duplicate to improve the accuracy of the results, or may be a control FET 550 that is not connected to the plasmonic film 510.

[0065] Reference now Figure 6 , shows a component under test (hereinafter referred to as “DUT”) 600 and a bipolar junction transistor (hereinafter referred to as “BJT”) 650 according to an embodiment. Figure 6 Shown is a cross-sectional view of a DUT 600 and a cross-sectional view of a BJT 650. DUT 600 together with BJT 650 may be an alternative embodiment of a device for detecting a specific molecule or analyte.

[0066] DUT 600 includes substrate 612, dielectric 614, plasmon film 610, and top layer 620. BJT 650 includes substrate 652, emitter 654, base 656, and collector 658. Similar named components of DUT 600 and BJT 650 may have the same functions as, and may be formed and include the same materials as, components of DUT 300. Plasmon film 610 may be physically and electrically connected to base 656 of BJT 650.

[0067] Plasmonic film 610 may function as a plasmon resonator and may be sensitized to absorb a specific analyte as previously described with respect to channel 310 of DUT 300. Plasmonic film 610 may include silicon, graphene, gold, silver, carbon nanotubes, metal oxides, and the like.

[0068] BJT 650 may be fabricated using conventional methods.

[0069] Plasmonic film 610 is conductive and forms a common sensing surface for both an optical sensor (i.e., FTIR spectrometer 200) and an electrical sensor (i.e., measurement of collector current of BJT 650 as emitter 654 voltage varies, while both collector 658 voltage and base 656 voltage remain constant).

[0070] Plasmonic film 610 is in contact with top layer 620. In an embodiment, top layer 620 may include a solution of the concentration of the analyte being tested, such as a blood sample for testing a medical test. DUT 600 may have plasmonic film 610 exposed to a solution, which may have the analyte dissolved therein.

[0071] In an embodiment, top layer 620 may be an open air environment for environmental testing.

[0072] Advantages of having the BJTs 650 electrically connected rather than physically residing within the FTIR 200 may include having one plasmonic film 610 connected to more than one BJT 650. The plasmonic film 610 may be connected to a group of two or more BJTs 650. Each BJT in the group of two or more BJTs 650 may be sensitive to a specific analyte, or may be used as a duplicate to improve the accuracy of the results, or may be a control BJT 650 that is not connected to the plasmonic film 610.

[0073] Reference now Figure 7 , depicts an operational flow chart illustrating a sensing process 700, according to an embodiment. At 702, a device under test may be installed in a FTIR spectrometer 200. The device under test may have been sensitized to react to a specific analyte via a plasmonics component.

[0074] Next, at 704, the device under test may be exposed to air that may contain the specific analyte, or may be exposed to a solution containing a dissolved material that may contain the specific analyte.

[0075] At 706, tests may be performed on the device under test. Optical tests may include FTIR spectrometer 200 testing. Electrical tests may include applying a voltage difference and measuring voltage thresholds and currents generated at different voltage differences.

[0076] The presence and concentration of a specific analyte is determined at 708. This is determined by the FTIR spectrometer 200 and electrical testing.

[0077] The semiconductor device may be specifically formed such that the semiconductor device has a channel or gate element that is a conductive material that may be used as a plasmon material. The plasmon material may be chemically assigned to a specific analyte and may be detected by FTIR to determine the presence of the specific analyte. The plasmon material also determines a voltage threshold and current based on a voltage difference applied to the semiconductor device that determines the presence of the specific analyte and the concentration of the specific analyte.

[0078] Reference now Figure 8 , shows a block diagram of components of a computing device according to an embodiment of the present invention, such as included in the detector 210 of the FTIR spectrometer 200. It should be understood that Figure 8 This is merely a description of an implementation and does not imply any limitation on the environments in which different embodiments may be implemented.Many modifications to the described environments are possible.

[0079] The computing device may include one or more processors 802, one or more computer-readable RAMs 804, one or more computer-readable ROMs 806, one or more computer-readable storage media 808, device drivers 812, read / write drivers or interfaces 814, and network adapters or interfaces 816, all interconnected by a communications fabric 818. Communications fabric 818 may be implemented with any architecture designed to pass data and / or control information between processors (such as microprocessors, communications and network processors, etc.), system memory, peripheral devices, and any other hardware components within the system.

[0080] One or more operating systems 810 and one or more application programs 811 are stored on one or more computer-readable storage media 808 for execution by one or more processors 802 through one or more corresponding RAMs 804 (typically including cache memories). For example, a flow 700 for sensing the presence and concentration of an analyte may be stored on one or more computer-readable storage media 808. In the illustrated embodiment, each of the computer-readable storage media 808 may be a disk storage device of an internal hard drive, a CD-ROM, a DVD, a memory stick, a tape, a disk, an optical disk, a semiconductor storage device such as a RAM, a ROM, an EPROM, a flash memory, or any other computer-readable tangible storage device that can store computer programs and digital information.

[0081] The computing device may also include a R / W drive or interface 814 to read from and write to one or more portable computer-readable storage media 826. Applications 811 on the computing device may be stored on one or more of the portable computer-readable storage media 826, read via a corresponding R / W drive or interface 814, and loaded into a corresponding computer-readable storage medium 808.

[0082] The computing device may also include a network adapter or interface 816, such as a TCP / IP adapter card or a wireless communication adapter (such as a 4G wireless communication adapter using OFDMA technology). Application programs 811 may be downloaded to the computing device from an external computer or an external storage device via a network (e.g., the Internet, a local area network or other wide area network or wireless network) and a network adapter or interface 816. The program may be loaded from the network adapter or interface 816 onto a computer-readable storage medium 808. The network may include copper wires, optical fibers, wireless transmissions, routers, firewalls, switches, gateway computers, and / or edge servers.

[0083] The computing device may also include a display screen 820, a keyboard or keypad 822, and a computer mouse or touchpad 824. The device driver 812 interfaces with the display screen 820 for imaging, the keyboard or keypad 822, the computer mouse or touchpad 824, and / or the display screen 820 for pressure sensing of alphanumeric character input and user selection. The device driver 812, the R / W drive or interface 814, and the network adapter or interface 816 may include hardware and software (stored on the computer-readable storage medium 808 and / or ROM 806).

[0084] The programs described herein are identified based on the applications in which they are implemented in specific embodiments of the invention. However, it should be understood that any specific program terminology herein is used only for convenience, and thus the present invention should not be limited to use only in any specific application identified and / or implied by such terminology.

[0085] Embodiments of the present invention may be provided to end users via a cloud computing infrastructure. Cloud computing generally refers to the provision of scalable computing resources as a service over a network. More formally, cloud computing may be defined as providing an abstraction of computing power between computing resources and their underlying technology architecture (e.g., servers, storage devices, networks), thereby enabling convenient on-demand network access to a shared pool of configurable computing resources that can be quickly provisioned and released with minimal management effort or service provider interaction. Thus, cloud computing allows users to access virtual computing resources (e.g., storage, data, applications, and even complete virtualized computing systems) in a "cloud" without regard to the underlying physical systems (or the location of those systems) used to provide the computing resources.

[0086] Typically, cloud computing resources are provided to users on a pay-per-use basis, where users are charged only for the computing resources actually used (e.g., the amount of storage space consumed by the user or the number of virtualized systems instantiated by the user). Users can access any resource residing in the cloud at any time and from anywhere on the Internet. In the context of the present invention, users can access a standardized search engine or related data available in the cloud. For example, a standardized search engine can be executed on a computing system in the cloud and perform a standardized search. In this case, the standardized search engine can standardize the information corpus and store the standardized index at a storage location in the cloud. Doing so allows users to access the information from any computing system attached to a network connected to the cloud (e.g., the Internet).

[0087] It is understood in advance that although the present disclosure includes detailed descriptions about cloud computing, the implementation of the teachings recorded herein is not limited to a cloud computing environment. Instead, embodiments of the present invention can be implemented in conjunction with any other type of computing environment now known or later developed.

[0088] Cloud computing is a service delivery model for enabling convenient, on-demand network access to a shared pool of configurable computing resources (e.g., networks, network bandwidth, servers, processing, memory, storage, applications, virtual machines, and services) that can be quickly provisioned and released with minimal management effort or interaction with the provider of the service. The cloud model may include at least five characteristics, at least three service models, and at least four deployment models.

[0089] Features are as follows:

[0090] On-demand self-service: Cloud consumers can unilaterally and automatically provision computing capabilities, such as server time and network storage, as needed without requiring manual interaction with the service provider.

[0091] Wide Area Network Access: Capabilities are available over the network and accessed through standard mechanisms that facilitate use by heterogeneous thin or thick client platforms (e.g., mobile phones, laptops, and PDAs).

[0092] Resource pooling: A provider's computing resources are pooled to serve multiple consumers using a multi-tenant model, where different physical and virtual resources are dynamically allocated and reallocated based on demand. There is location independence in the sense that consumers typically do not control or know the exact location of the resources provided, but are able to specify the location at a higher level of abstraction (e.g., country, state, or data center).

[0093] Rapid elasticity: In some cases, the ability to scale out quickly and in quickly can be provisioned quickly and elastically. To the consumer, the capacity available for provisioning often appears to be unlimited and can be purchased in any quantity at any time.

[0094] Metered Services: Cloud systems automatically control and optimize resource usage by leveraging metering capabilities at some level of abstraction appropriate to the type of service (e.g., storage, processing, bandwidth, and active user accounts). Resource usage can be monitored, controlled, and reported, providing transparency to both providers and consumers of the utilized services.

[0095] The service model is as follows:

[0096] Software as a Service (SaaS): The capability provided to the consumer is to use the provider's applications running on the cloud infrastructure. The applications are accessible from a variety of client devices through a thin client interface such as a web browser (e.g., web-based email). The consumer does not manage or control the underlying cloud infrastructure including the network, servers, operating systems, storage, or even individual application capabilities, with the possible exception of limited user-specific application configuration settings.

[0097] Platform as a Service (PaaS): The capability provided to consumers is to deploy consumer-created or acquired applications onto cloud infrastructure, where the applications are created using programming languages ​​and tools supported by the provider. The consumer does not manage or control the underlying cloud infrastructure including networks, servers, operating systems, or storage, but has control over the deployed applications and possible configuration of the application hosting environment.

[0098] Infrastructure as a Service (IaaS): The capabilities provided to consumers are processing, storage, networking, and other basic computing resources on which consumers can deploy and run arbitrary software, which may include operating systems and applications. Consumers do not manage or control the underlying cloud infrastructure, but have control over the operating system, storage, deployed applications, and possibly limited control over selected networking components (e.g., host firewalls).

[0099] The deployment model is as follows:

[0100] Private Cloud: The cloud infrastructure is operated only for the organization. It can be managed by the organization or a third party and can exist inside or outside the building.

[0101] Community cloud: The cloud infrastructure is shared by several organizations and supports a specific community with shared concerns (e.g., mission, security requirements, policies, and compliance considerations). It can be managed by the organization or a third party and can exist on-premises or off-premises.

[0102] Public cloud: Cloud infrastructure is available to the general public or large industrial groups and is owned by an organization that sells cloud services.

[0103] Hybrid cloud: A cloud infrastructure is a combination of two or more clouds (private, community, or public) that remain unique entities but are bound together by standardized or proprietary technologies that enable data and application portability (e.g., cloud bursting for load balancing between clouds).

[0104] The cloud computing environment is service-oriented, with a focus on statelessness, low coupling, modularity, and semantic interoperability. At the core of cloud computing is an infrastructure consisting of a network of interconnected nodes.

[0105] Reference now Fig. 9 , depicts an illustrative cloud computing environment 900. As shown, the cloud computing environment 900 includes one or more cloud computing nodes 910 with which a local computing device used by a cloud consumer can communicate, such as a personal digital assistant (PDA) or cellular phone 940A, a desktop computer 940B, a laptop computer 940C, and / or an automobile computer system 940N. The cloud computing nodes 910 can communicate with each other. They can be physically or virtually grouped (not shown) in one or more networks, such as a private cloud, community cloud, public cloud, or hybrid cloud, or a combination thereof, as described above. This allows the cloud computing environment 900 to provide infrastructure, platform, and / or software as a service for which the cloud consumer does not need to maintain resources on a local computing device. It will be appreciated that Fig. 9The types of computing devices 940A-N shown are intended to be illustrative only, and cloud computing node 910 and cloud computing environment 900 may communicate with any type of computerized device over any type of network and / or network addressable connection (eg, using a web browser).

[0106] Reference now Fig.10 , showing a cloud computing environment 900 (such as Fig. 9 A set of functional abstraction layers provided by . Fig.10 The components, layers, and functions shown in are intended to be illustrative only, and embodiments of the present invention are not limited thereto. As depicted, the following layers and corresponding functions are provided:

[0107] The hardware and software layer 1060 includes hardware and software components. Examples of hardware components include: host 1061; server 1062 based on RISC (Reduced Instruction Set Computer) architecture; server 1063; blade server 1064; storage device 865; and network and networking components 1066. In some embodiments, software components include network application server software 1067 and database software 1068.

[0108] The virtualization layer 1070 provides an abstraction layer from which the following examples of virtual entities can be provided: virtual servers 1071 ; virtual storage 1072 ; virtual networks 1073 , including virtual private networks; virtual applications and operating systems 1074 ; and virtual clients 1075 .

[0109] In an example, the management layer 1080 may provide the functionality described below. Resource provisioning 1081 provides dynamic procurement of computing resources and other resources used to perform tasks within a cloud computing environment. Metering and pricing 1082 provides cost tracking when resources are utilized in a cloud computing environment, as well as accounting or invoicing for the consumption of these resources. In an example, these resources may include application software licenses. Security provides authentication for cloud consumers and tasks, as well as protection for data and other resources. User portal 1083 provides access to the cloud computing environment for consumers and system administrators. Service level management 1084 provides cloud computing resource allocation and management so that the required service levels are met. Service level agreement (SLA) planning and fulfillment 1085 provides pre-scheduling and procurement of cloud computing resources, where future demand is anticipated based on the SLA.

[0110] The workload layer 1090 provides examples of functionality that can utilize a cloud computing environment. Examples of workloads and functionality that can be provided from this layer include: mapping and navigation 1091; software development and lifecycle management 1092; virtual classroom education delivery 1093; data analysis processing 1094; transaction processing 1095; and sensor programs 1096. Sensor programs 1096 may involve testing the device being tested to determine the presence and concentration of an analyte.

[0111] The present invention may be a system, method and / or computer program product at any possible level of technical detail integration. The computer program product may include a computer-readable (one or more) storage medium having computer-readable program instructions thereon, the computer-readable program instructions being used to cause a processor to perform various aspects of the present invention.

[0112] A computer-readable storage medium may be a tangible device capable of retaining and storing instructions used by an instruction execution device. A computer-readable storage medium may be, for example, but not limited to, an electronic storage device, a magnetic storage device, an optical storage device, an electromagnetic storage device, a semiconductor storage device, or any suitable combination of the foregoing. A non-exhaustive list of more specific examples of computer-readable storage media includes the following: a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), a static random access memory (SRAM), a portable compact disc read-only memory (CD-ROM), a digital versatile disk (DVD), a memory stick, a floppy disk, a mechanical encoding device such as a punch card or a raised structure in a groove with instructions recorded thereon, and any suitable combination of the foregoing. As used herein, a computer-readable storage medium should not be interpreted as a temporary signal itself, such as a radio wave or other freely propagating electromagnetic wave, an electromagnetic wave propagated by a waveguide or other transmission medium (e.g., a light pulse by an optical fiber cable), or an electrical signal transmitted by a wire.

[0113] The computer-readable program instructions described herein can be downloaded from a computer-readable storage medium to a corresponding computing / processing device, or downloaded to an external computer or external storage device via a network, such as the Internet, a local area network, a wide area network, and / or a wireless network. The network can include copper transmission cables, optical transmission fibers, wireless transmissions, routers, firewalls, switches, gateway computers, and / or edge servers. The network adapter card or network interface in each computing / processing device receives the computer-readable program instructions from the network and forwards the computer-readable program instructions to be stored in a computer-readable storage medium within the corresponding computing / processing device.

[0114] The computer-readable program instructions for performing the operation of the present invention may be assembly instructions, instruction set architecture (ISA) instructions, machine-dependent instructions, microcode, firmware instructions, state setting data, configuration data of an integrated circuit, or source code or object code written in any combination of one or more programming languages ​​(including object-oriented programming languages, such as Smalltalk, C++, etc.) and procedural programming languages ​​(such as "C" programming language or similar programming languages). The computer-readable program instructions may be executed entirely on the user's computer, partially on the user's computer, executed as an independent software package, partially on the user's computer and partially on a remote computer, or completely on a remote computer or server. In the latter case, the remote computer may be connected to the user's computer via any type of network, including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computer (e.g., using an Internet service provider via the Internet). In some embodiments, in order to perform various aspects of the present invention, an electronic circuit including, for example, a programmable logic circuit, a field programmable gate array (FPGA), or a programmable logic array (PLA) may execute a computer-readable program instruction by utilizing the state information of the computer-readable program instructions to personalize the electronic circuit.

[0115] Various aspects of the present invention are described herein with reference to the flow chart and / or block diagram of the method, device (system) and computer program product according to embodiments of the present invention. It will be understood that each frame of the flow chart and / or block diagram and the combination of frames in the flow chart and / or block diagram can be implemented by computer-readable program instructions.

[0116] These computer-readable program instructions can be provided to a processor of a computer or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device create a device for implementing the functions / actions specified in one or more boxes of the flowchart and / or block diagram. These computer-readable program instructions can also be stored in a computer-readable storage medium, which can guide the computer, programmable data processing device and / or other equipment to work in a specific manner, so that the computer-readable storage medium having the instructions stored therein includes an article of manufacture, which includes instructions for implementing various aspects of the functions / actions specified in one or more boxes of the flowchart and / or block diagram.

[0117] Computer-readable program instructions may also be loaded onto a computer, other programmable data processing apparatus, or other device, so that a series of operational steps are performed on the computer, other programmable apparatus, or other device to produce a computer-implemented process, so that the instructions executed on the computer, other programmable apparatus, or other device implement the functions / actions specified in one or more boxes of the flowchart and / or block diagram.

[0118] Flowcharts and block diagrams in the accompanying drawings show the possible architecture, function and operation of the system, method and computer program product according to various embodiments of the present invention.In this regard, each frame in the flow chart or block diagram can represent a module, segment or part of an instruction, which includes one or more executable instructions for realizing the specified logical function.In some alternative embodiments, the function noted in the frame may not occur in the order noted in the figure.For example, two frames shown continuously can actually be implemented as a step, and are performed simultaneously, substantially simultaneously, in a partially or entirely time-overlapping manner, or these frames can sometimes be performed in reverse order, depending on the function involved.It will also be noted that the combination of the frames in each frame of the block diagram and / or flow chart illustration and the block diagram and / or flow chart illustration can be implemented by a dedicated hardware-based system that performs a specified function or action or performs a combination of special-purpose hardware and computer instructions.

[0119] The description of various embodiments of the present invention has been given for the purpose of illustration, but it is not intended to be exhaustive or limited to the disclosed embodiments. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope of the described embodiments. The terms used herein are selected to best explain the principles of the embodiments, practical applications, or technical improvements existing in the market, or to enable other persons of ordinary skill in the art to understand the embodiments disclosed herein.

Claims

1. A semiconductor structure, comprising: A device under test, the device under test comprising a semiconductor substrate, a dielectric on the semiconductor substrate, a plasmon film on the dielectric exposed to an open air environment for environmental testing, wherein the plasmon film forms a common sensing surface of a Fourier transform infrared FTIR spectrometer and an electrical sensor; and A group of two or more bipolar junction transistors, each transistor in the group of two or more bipolar junction transistors including an emitter, a collector, and a base between the emitter and the collector on another semiconductor substrate, wherein each transistor in the group of two or more bipolar junction transistors is sensitive to a specific analyte, wherein the plasmonic film is electrically connected to each transistor in the group of two or more bipolar junction transistors.

2. The semiconductor structure of claim 1 wherein the plasmon film comprises a response in the infrared region.

3. A semiconductor structure according to claim 1 or claim 2, wherein the plasmon film comprises carbon.

4. The semiconductor structure of claim 1 or claim 2, wherein the plasmon film comprises sensitivity to a known analyte.

5. The semiconductor structure of claim 1, wherein: For each transistor in the group of two or more bipolar junction transistors, the associated electrical sensor is capable of measuring changes in collector current as emitter current changes while both collector voltage and base voltage remain constant.

6. A sensor comprising: a device under test comprising a semiconductor substrate, a dielectric on the semiconductor substrate, a plasmonic film exposed to a solution of a concentration of an analyte being tested, wherein the plasmonic film forms a common sensing surface for a Fourier transform infrared spectrometer FTIR and an electrical sensor; and A group of two or more bipolar junction transistors, each transistor in the group of two or more bipolar junction transistors including an emitter, a collector, and a base between the emitter and the collector on another semiconductor substrate, wherein each transistor in the group of two or more bipolar junction transistors is sensitive to a specific analyte, wherein the plasmonic film is electrically connected to each transistor in the group of two or more bipolar junction transistors.

7. The sensor of claim 6, wherein the plasmon film comprises a response in the infrared region.

8. The sensor of claim 6, wherein the plasmon film comprises carbon.

9. The sensor of claim 8, wherein the plasmon film comprises graphene or carbon nanotubes.

10. The sensor according to claim 6, wherein: For each transistor in the group of two or more bipolar junction transistors, the associated electrical sensor measures a change in collector current as emitter current changes while both collector voltage and base voltage are held constant.

11. A method of forming a sensor, comprising: forming a device under test, the forming of the device under test comprising forming a dielectric on a semiconductor substrate, forming a plasmon film on the dielectric, exposing the plasmon film to an open air environment for environmental testing, wherein the plasmon film forms a common sensing surface of a Fourier transform infrared (FTIR) spectrometer and an electrical sensor; and A group of two or more bipolar junction transistors is formed, each transistor in the group of two or more bipolar junction transistors comprising forming an emitter, a collector, and a base between the emitter and the collector on another semiconductor substrate, wherein each transistor in the group of two or more bipolar junction transistors is sensitive to a specific analyte, wherein the plasmonic film is electrically connected to each transistor in the group of two or more bipolar junction transistors.

12. The method according to claim 11, further comprising: The plasmonic film is sensitized to a known analyte.

13. The method of claim 11, wherein the plasmonic film comprises a response in the infrared region. The method of claim 11 , wherein the plasmonic film comprises carbon.

15. The method of claim 11, wherein for each transistor in the group of two or more bipolar junction transistors, the associated electrical sensor measures a change in collector current as emitter current changes while both collector voltage and base voltage are held constant.

16. The method according to claim 11, further comprising: installing the sensor in the FTIR spectrometer; as well as Determine the presence and concentration of known analytes.

17. The method of claim 16, wherein for each transistor in the group of two or more bipolar junction transistors, the associated electrical sensor measures a change in collector current as emitter current changes while both collector voltage and base voltage are held constant.

18. The method according to claim 16, further comprising: The infrared response of the sensor is measured.

19. The method according to claim 16, further comprising: installing the second sensor in the FTIR spectrometer; as well as The second sensor is protected from the environment.

20. The method of claim 16, further comprising: The sensor array was mounted in a FTIR spectrometer.

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