Electrode structures, transistor structures, and radio frequency switch structures

Abstract

The application discloses an electrode structure, a transistor structure and a radio frequency switch structure. The electrode structure comprises a comb finger connecting part, N conductive comb fingers extending from the comb finger connecting part to the same direction perpendicular to the comb finger connecting part, and the angle between the conductive comb fingers and the comb finger connecting part is an obtuse angle.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of radio frequency switch structure, and particularly relates to an electrode structure, a transistor structure and a radio frequency switch structure. BACKGROUND

[0002] The existing transistor structure generally comprises a gate, a source and a drain, and the source and the drain are both electrode structures through which current can pass. The electrode structure here refers to a conductive electrode through which current can pass in the transistor structure. Generally, the two electrode structures of the source and the drain are finger-shaped configuration devices. In the working process of the existing electrode structure, a sharp discharge phenomenon occurs, which further causes charge accumulation, so that the transistor structure in which the electrode structure is located has an antenna effect, damages the transistor structure and affects the service life thereof. SUMMARY

[0003] The electrode structure, the transistor structure and the radio frequency switch structure provided by the embodiments of the present application solve the problem of sharp discharge phenomenon of the electrode structure and affect the service life thereof.

[0004] The electrode structure provided by the embodiments of the present application comprises a comb finger connection part, N conductive comb fingers extending out from the comb finger connection part in the same direction perpendicular to the comb finger connection part, and an angle between the conductive comb fingers and the comb finger connection part is an obtuse angle, where N is a positive integer greater than or equal to 2.

[0005] Preferably, the conductive comb fingers and the comb finger connection part are connected in an arc shape.

[0006] Preferably, the electrode structure further comprises 2N connection extension parts extending out from the comb finger connection part in the same direction perpendicular to the comb finger connection part.

[0007] Each of the two sides of each conductive comb finger is connected to the comb finger connection part by using one connection extension part.

[0008] An angle between the connection extension part and the conductive comb finger is an obtuse angle, and an angle between the connection extension part and the comb finger connection part is an obtuse angle.

[0009] Preferably, a radial cross-sectional area of the conductive comb finger is configured such that a radial cross-sectional area close to one end of the comb finger connection part is greater than a radial cross-sectional area of other parts away from the comb finger connection part.

[0010] Preferably, the radial cross-sectional area of the conductive comb finger is configured to decrease in turn in the extending direction from the end close to the comb finger connection part.

[0011] Preferably, an axial cross section of the conductive comb finger is isosceles trapezoidal.

[0012] The embodiment of the present application provides a transistor structure, which comprises a gate, a source and a drain, and the source and / or the drain are the electrode structures.

[0013] Preferably, the source comprises a source connecting part and N source combs extending from the source connecting part to a first direction perpendicular to the source connecting part.

[0014] The drain comprises a drain connecting part and N drain combs extending from the drain connecting part to a second direction perpendicular to the drain connecting part.

[0015] The source connecting part and the drain connecting part are arranged in parallel, and the first direction and the second direction are opposite directions.

[0016] Preferably, the N source combs and the N drain combs are arranged in an interlaced manner along the axial direction of the connecting part.

[0017] Preferably, the projections of the N source combs and the N drain combs along the axial direction of the connecting part do not overlap.

[0018] The embodiment of the present application provides a radio frequency switch structure comprising the transistor structure.

[0019] Preferably, the radio frequency switch structure comprises an active area and at least one metal layer stacked on the active area in the up-down direction.

[0020] The transistor structure is arranged on the metal layer and electrically connected with the active area.

[0021] Preferably, the radio frequency switch structure comprises M transistor structures, and the M transistor structures are arranged on at least two metal layers in the up-down direction respectively, so that the lengths of the conductive combs in the M transistor structures are configured to increase from top to bottom, and M is a positive integer greater than or equal to 2.

[0022] Preferably, the M transistor structures are arranged in sequence, so that the sources of the M transistor structures are connected and the drains of the M transistor structures are connected.

[0023] The electrode structure, the transistor structure and the radio frequency switch structure, the electrode structure comprises a comb connecting part and N conductive combs extending from the comb connecting part to the same direction perpendicular to the comb connecting part, and the angle between the conductive combs and the comb connecting part is an obtuse angle, so that the connection between the conductive combs and the comb connecting part is relatively gentle, which can not only avoid the occurrence of sharp discharge at the connection, but also avoid the accumulation of charges at the connection, so as to avoid the antenna effect of the transistor structure where the electrode structure is located, damage the transistor structure and affect its service life, and also avoid the dispersion and loss of signal flow, so as to improve the signal flow direction and further improve the harmonic. Attached Figure Description

[0024] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments of the present invention will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 This is a circuit diagram of the electrode structure in one embodiment of the present invention;

[0026] Figure 2 This is another circuit diagram of the electrode structure in one embodiment of the present invention;

[0027] Figure 3 This is a circuit diagram of a transistor structure in one embodiment of the present invention;

[0028] Figure 4 This is a circuit diagram of a radio frequency switch structure in one embodiment of the present invention;

[0029] Figure 5 This is another circuit diagram of the radio frequency switch structure in one embodiment of the present invention.

[0030] Among them, 1. Electrode structure; 11. Comb finger connection part; 12. Conductive comb finger; 13. Connection extension part; 2. Transistor structure; 21. Source; 211. Source connection part; 212. Source comb finger; 22. Drain; 221. Drain connection part; 222. Drain comb finger; 3. RF switch structure; 31. Active region; 32. Metal layer. Detailed Implementation

[0031] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0032] It should be understood that the invention can be embodied in various forms and should not be construed as being limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, for clarity, the dimensions and relative dimensions of layers and regions may be exaggerated. The same reference numerals denote the same elements throughout.

[0033] It will be understood that when an element or layer is referred to as being "on" or "connected to" another element or layer, it can be directly on or connected to the other element or layer or intervening elements or layers can be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element or layer, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. can be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application.

[0034] Spatially relative terms, such as "beneath", "below", "lower", "under", "above", "upper" and the like, can be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary term "below" can encompass both an orientation of above and below. The device can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0035] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising", when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0036] For a thorough understanding of the present application, reference should be made to the following detailed description taken in conjunction with the accompanying drawings, in which:

[0037] As Figure 1As shown, the electrode structure 1 includes a comb finger connection portion 11 and N conductive comb fingers 12 extending from the comb finger connection portion 11 in the same direction perpendicular to the comb finger connection portion 11, N is a positive integer greater than or equal to 2, and the angle between the conductive comb fingers 12 and the comb finger connection portion 11 is an obtuse angle.

[0038] The electrode structure 1 is part of a conductive structure of the transistor structure 2 and is an electrode for current flow, for example, when the transistor structure 2 is a field effect transistor, the drain 22 and the source 21 of the field effect transistor are electrodes for current flow. N is the number of conductive comb fingers 12, N is a positive integer greater than or equal to 2, that is, N≥2.

[0039] As an example, the electrode structure 1 is a finger-shaped configuration device, specifically including a comb finger connection portion 11 and N conductive comb fingers 12 extending from the comb finger connection portion 11 in the same direction perpendicular to the comb finger connection portion 11. That is, the comb finger connection portion 11 and the N conductive comb fingers 12 are integrally formed, and the conductive material can be etched to form an integral shape using an etching process, but is not limited thereto.

[0040] As an example, the electrode structure 1 includes a comb finger connection portion 11 and N conductive comb fingers 12 extending from the comb finger connection portion 11 in the same direction perpendicular to the comb finger connection portion 11, and the angle between the conductive comb fingers 12 and the comb finger connection portion 11 is an obtuse angle. This can make the connection between the conductive comb fingers 12 and the comb finger connection portion 11 relatively gentle, avoiding the angle between the conductive comb fingers 12 and the comb finger connection portion 11 being a right angle or an acute angle, which can cause a sharp discharge phenomenon at the connection, causing charge accumulation at the connection, resulting in an antenna effect in the transistor structure 2 where the electrode structure 1 is located, damaging the transistor structure 2 and affecting its service life. In addition, when the angle between the conductive comb fingers 12 and the comb finger connection portion 11 is a right angle or an acute angle, signal flow can be dispersed and lost when the signal is transmitted in the electrode structure 1, further affecting harmonic performance.

[0041] In this example, the angle between the conductive comb fingers 12 and the comb finger connection portion 11 can be set to 135 degrees or other angles, as long as the connection between the conductive comb fingers 12 and the comb finger connection portion 11 is relatively gentle, avoiding a sharp discharge phenomenon at the connection, avoiding charge accumulation at the connection, resulting in an antenna effect in the transistor structure 2 where the electrode structure 1 is located, and avoiding signal flow dispersion and loss.

[0042] In an embodiment, the conductive comb fingers 12 and the comb finger connection portion 11 are connected in an arc shape.

[0043] As an example, the arc-shaped connection between the conductive comb finger 12 and the comb finger connecting portion 11 makes the connection between the conductive comb finger 12 and the comb finger connecting portion 11 relatively smooth, avoiding the connection between the conductive comb finger 12 and the comb finger connecting portion 11 being too sharp to form a sharp-end discharge phenomenon, causing the charge to accumulate at the connection, making the transistor structure 2 where the electrode structure 1 is located appear an antenna effect, damaging the transistor structure 2 and affecting its service life.

[0044] In an embodiment, as shown in Figure 1 The electrode structure 1 further includes 2N connection extensions 13 extending from the comb finger connecting portion 11 in the same direction perpendicular to the comb finger connecting portion 11; each of the two sides of each conductive comb finger 12 is connected to the comb finger connecting portion 11 by one connection extension 13; the angle between the connection extension 13 and the conductive comb finger 12 is obtuse, and the angle between the connection extension 13 and the comb finger connecting portion 11 is obtuse.

[0045] The connection extension 13 is a part extending from the comb finger connecting portion 11 to one side surface of the conductive comb finger 12.

[0046] As an example, the electrode structure 1 includes the comb finger connecting portion 11, N conductive comb fingers 12 and their N connection extensions 13 extending from the comb finger connecting portion 11 in the same direction perpendicular to the comb finger connecting portion 11. Each of the two sides of each conductive comb finger 12 is connected to the comb finger connecting portion 11 by one connection extension 13, that is, each connection extension 13 is integrated with the comb finger connecting portion 11 and one side of the conductive comb finger 12, so that the comb finger connecting portion 11, the conductive comb finger 12 and the connection extension 13 are integrally formed. During the manufacturing of the electrode structure 1, the angle between the connection extension 13 and the conductive comb finger 12 is obtuse, and the angle between the connection extension 13 and the comb finger connecting portion 11 is obtuse, which makes the connection between the connection extension 13 and the conductive comb finger 12 relatively smooth, and the connection between the connection extension 13 and the comb finger connecting portion 11 relatively smooth, so that the connection between the conductive comb finger 12 and the comb finger connecting portion 11 will not produce a sharp-end discharge phenomenon, and the charge accumulation at the connection will not cause the transistor structure 2 where the electrode structure 1 is located to appear an antenna effect, damage the transistor structure 2 and affect its service life.

[0047] As an example, the shape of the connecting extension 13 can be a right-angled triangle, two of whose right-angled sides are integrated with the comb finger connecting part 11 and the conductive comb finger 12 respectively, and the angle between the hypotenuse of the connecting extension 13 and the conductive comb finger 12 is obtuse, and the angle between the connecting extension 13 and the comb finger connecting part 11 is obtuse, so that the connection between the connecting extension 13 and the conductive comb finger 12 is relatively gentle, and the connection between the connecting extension 13 and the comb finger connecting part 11 is relatively gentle, which can avoid the phenomenon of sharp discharge at the connection between the conductive comb finger 12 and the comb finger connecting part 11, and avoid the accumulation of charges at the connection, which can cause the antenna effect of the transistor structure 2 where the electrode structure 1 is located, damage the transistor structure 2, affect its service life, and also avoid the dispersion and loss of signal flow, improve the signal flow direction, and further improve the harmonic.

[0048] Further, the hypotenuse of the connecting extension 13 can be a straight line or an arc, so that the connection between the connecting extension 13 and the conductive comb finger 12 is relatively gentle, and the connection between the connecting extension 13 and the comb finger connecting part 11 is relatively gentle.

[0049] In an embodiment, the radial cross-sectional area of the conductive comb finger 12 is configured to be larger near one end of the comb finger connecting part 11 than other parts away from the comb finger connecting part 11.

[0050] The axial direction of the conductive comb finger 12 is the direction in which the conductive comb finger 12 extends. The radial direction of the conductive comb finger 12 is the direction perpendicular to the axial direction of the conductive comb finger 12. The radial cross-sectional area of the conductive comb finger 12 is the cross-sectional area taken along the radial direction of the conductive comb finger 12.

[0051] The electrode structure 1 includes the comb finger connecting part 11 and N conductive comb fingers 12 extending from the comb finger connecting part 11 in the same direction perpendicular to the comb finger connecting part 11. Generally, when the electrode structure 1 is in a conducting state, the current flows from the comb finger connecting part 11 to the conductive comb finger 12. When the radial cross-sectional area of the conductive comb finger 12 is the same, the equivalent resistance of the conductive comb finger 12 in the conducting state is the same, and the current flowing through the conductive comb finger 12 decreases in turn from one end near the comb finger connecting part 11 to the extension direction, which may cause uneven current flow.

[0052] Generally, when the electrode structure 1 is in the conducting state, the closer to the comb finger connecting part 11, the greater the current, and the farther away from the comb finger connecting part 11, the smaller the current. By configuring the radial cross-sectional area of the conductive comb finger 12, the radial cross-sectional area near the comb finger connecting part 11 is greater than the radial cross-sectional area of other parts away from the comb finger connecting part 11. In this example, the radial cross-sectional area of the conductive comb finger 12 near one end of the comb finger connecting part 11 is the largest, and can decrease in sequence from the extension direction near the comb finger connecting part 11, or can decrease to a certain position and remain unchanged, so that the radial cross-sectional area near one end of the comb finger connecting part 11 is greater than the radial cross-sectional area of other parts away from the comb finger connecting part 11. The equivalent resistance of the electrode structure 1 in the conducting state can be adjusted, so that when the electrode structure 1 is in the conducting state, the current flowing through the conductive comb finger 12 is uniform, thereby improving the current-carrying capacity of the electrode structure 1 and solving the problem of uneven current flow when the electrode structure 1 is in the conducting state.

[0053] In an embodiment, as shown in Figure 2 the radial cross-sectional area of the conductive comb finger 12 is configured to decrease in sequence from the extension direction near one end of the comb finger connecting part 11.

[0054] In this example, the radial cross-sectional area of the conductive comb finger 12 is configured to decrease in sequence from the extension direction near one end of the comb finger connecting part 11, so as to achieve the purpose that the radial cross-sectional area of the conductive comb finger 12 near the comb finger connecting part 11 is greater, and the radial cross-sectional area of the conductive comb finger 12 away from the comb finger connecting part 11 is smaller, thereby adjusting the equivalent resistance of the electrode structure 1 in the conducting state, so that when the electrode structure 1 is in the conducting state, the current flowing through the conductive comb finger 12 is uniform, thereby improving the current-carrying capacity of the electrode structure 1 and solving the problem of uneven current flow when the electrode structure 1 is in the conducting state.

[0055] In an embodiment, the axial cross section of the conductive comb finger 12 is isosceles trapezoidal.

[0056] The axial direction of the conductive comb finger 12 is the direction in which the conductive comb finger 12 extends. The axial cross section of the conductive comb finger 12 is a cross section taken along the axial direction of the conductive comb finger 12.

[0057] As an example, the axial cross section of the conductive comb finger 12 is isosceles trapezoidal, and the position corresponding to the lower base of the isosceles trapezoid is integrated with the comb finger connecting part 11, so that the radial cross-sectional area of the conductive comb finger 12 decreases in sequence from the extension direction near one end of the comb finger connecting part 11, and the radial cross-sectional area of the conductive comb finger 12 decreases in sequence. The amplitude is relatively uniform, which can adjust the equivalent resistance of the electrode structure 1 in the conducting state, so that when the electrode structure 1 is in the conducting state, the current flowing through the conductive comb finger 12 is uniform, thereby improving the current-carrying capacity of the electrode structure 1 and solving the problem of uneven current flow when the electrode structure 1 is in the conducting state.

[0058] The embodiment of the present application provides a transistor structure 2, as shown in the figure, which comprises a gate, a source 21 and a drain 22, and the source 21 and / or the drain 22 are the electrode structure 1 in the above embodiment. Figure 3

[0059] As an example, the transistor structure 2 comprises the gate, the source 21 and the drain 22, the gate of the transistor structure 2 does not supply current flow and is not the electrode structure 1, and the drain 22 and the source 21 of the transistor structure 2 supply current flow and are the electrode structure 1. In the example, the source 21 of the transistor structure 2 can be the electrode structure 1 in the above embodiment, or the drain 22 of the transistor structure 2 can be the electrode structure 1 in the above embodiment, or the source 21 and the drain 22 of the transistor structure 2 are the electrode structure 1 in the above embodiment at the same time.

[0060] In the example, the source 21 and the drain 22 in the transistor structure 2 are the electrode structure 1 in the above embodiment, which comprises the comb finger connecting part 11 and the N conductive comb fingers 12 extending out from the comb finger connecting part 11 to the same direction perpendicular to the comb finger connecting part 11, and the angle between the conductive comb finger 12 and the comb finger connecting part 11 is an obtuse angle, so that the connection between the conductive comb finger 12 and the comb finger connecting part 11 is relatively gentle, avoiding the angle between the conductive comb finger 12 and the comb finger connecting part 11 being a right angle or an acute angle, which leads to the sharp discharge phenomenon at the connection, causes the charge accumulation at the connection, causes the antenna effect of the transistor structure 2 where the electrode structure 1 is located, damages the transistor structure 2, affects the service life, and due to the angle between the conductive comb finger 12 and the comb finger connecting part 11 being a right angle or an acute angle, the signal flow is dispersed and lost when the signal is transmitted in the electrode structure 1, and further affects the harmonic performance.

[0061] In an embodiment, as shown in the figure, the source 21 comprises a source connecting part 211 and N source comb fingers 212 extending out from the source connecting part 211 to a first direction perpendicular to the source connecting part 211; Figure 3

[0062] The drain 22 comprises a drain connecting part 221 and N drain comb fingers 222 extending out from the drain connecting part 221 to a second direction perpendicular to the drain connecting part 221;

[0063] The source connecting part 211 and the drain connecting part 221 are arranged in parallel and opposite directions, and the first direction and the second direction are opposite directions.

[0064] Among them, the first direction refers to the extension direction of the source comb finger 212, and the second direction refers to the extension direction of the drain comb finger 222.

[0065] ​​As an example, the source electrode 21 and the drain electrode 22 are both electrode structures 1. The source electrode 21 includes a source electrode connecting portion 211 and N source electrode fingers 212 extending from the source electrode connecting portion 211 in a first direction perpendicular to the source electrode connecting portion 211. The drain electrode 22 includes a drain electrode connecting portion 221 and N drain electrode fingers 222 extending from the drain electrode connecting portion 221 in a second direction perpendicular to the drain electrode connecting portion 221. In the design of the transistor structure 2, the source electrode connecting portion 211 and the drain electrode connecting portion 221 are arranged in parallel and opposite directions, and the first direction and the second direction are opposite directions. For example, the source electrode connecting portion 211 is arranged on the left side, and the drain electrode connecting portion 221 is arranged on the right side. The first direction is from left to right, and the second direction is from right to left. That is, the drain electrode 22 includes the source electrode connecting portion 211 arranged on the left side and the source electrode fingers 212 extending in the left-to-right direction, and the drain electrode 22 includes the drain electrode connecting portion 221 arranged on the right side and the drain electrode fingers 222 extending in the right-to-left direction, thereby ensuring the realization of the conduction function of the transistor structure 2.

[0066] In an embodiment, as shown in FIG. 2, the N source electrode fingers 212 and the N drain electrode fingers 222 are staggered along the connecting portion axial direction. Figure 3

[0067] As an example, the N source electrode fingers 212 and the N drain electrode fingers 222 are staggered along the connecting portion axial direction, that is, the extension line of any source electrode finger 212 is located between two adjacent drain electrode fingers 222, and the extension line of any drain electrode finger 222 is located between two adjacent source electrode fingers 212, thereby ensuring the realization of the conduction function of the transistor structure 2. Here, the extension line of the source electrode finger 212 refers to a virtual line extending from the end of the source electrode finger 212 in the extending direction, and correspondingly, the extension line of the drain electrode finger 222 refers to a virtual line extending from the end of the drain electrode finger 222 in the extending direction.

[0068] In an embodiment, as shown in FIG. 2, the N source electrode fingers 212 and the N drain electrode fingers 222 are staggered along the connecting portion axial direction. Figure 3

[0069] Here, the connecting portion axial direction refers to the axial direction of the finger connecting portion 11, and can also be understood as a direction perpendicular to the extending direction of the conductive finger 12.

[0070] ​​As an example, the projections of the N source comb fingers 212 and the N drain comb fingers 222 along the connection axial direction do not overlap, so as to avoid forming parallel-plate capacitors when the source comb fingers 212 and the drain comb fingers 222 are conductive, which affects the working performance of the transistor structure 2. That is, the end of any source comb finger 212 is located outside the drain comb finger gap formed between the adjacent two drain comb fingers 222, so as to avoid the projections of the source comb finger 212 and the adjacent two drain comb fingers 222 along the connection axial direction overlapping, so that parallel-plate capacitors are formed when the source comb fingers 212 and the drain comb fingers 222 are conductive. In addition, the end of any drain comb finger 222 is located outside the source comb finger gap formed between the adjacent two source comb fingers 212, so as to avoid the projections of the drain comb finger 222 and the adjacent two source comb fingers 212 along the connection axial direction overlapping, so that parallel-plate capacitors are formed when the source comb fingers 212 and the drain comb fingers 222 are conductive.

[0071] In an embodiment, the transistor structure 2 is a field effect transistor.

[0072] As an example, the transistor structure 2 can be a field effect transistor, specifically a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), which is a field effect transistor that can be widely used in analog circuits and digital circuits.

[0073] The embodiment of the present application provides a radio frequency switch structure 3, which comprises the transistor structure 2 in the above embodiment.

[0074] As an example, the radio frequency switch structure 3 comprises the transistor structure 2 in the above embodiment, and the source 21 and / or the drain 22 of the transistor structure 2 are the electrode structure 1 in the above embodiment. In the electrode structure 1, the angle at the connection between the conductive comb finger 12 and the comb finger connection part 11 is an obtuse angle, so as to make the connection between the conductive comb finger 12 and the comb finger connection part 11 relatively gentle, avoid the angle at the connection between the conductive comb finger 12 and the comb finger connection part 11 being a right angle or an acute angle, so as to cause the sharp discharge phenomenon at the connection, cause the charge accumulation at the connection, cause the antenna effect of the transistor structure 2 where the electrode structure 1 is located, damage the transistor structure 2, and affect the service life thereof.

[0075] In an embodiment, as shown in Figure 4 The radio frequency switch structure 3 comprises an active region 31 and at least one metal layer 32 stacked on the active region 31 in the up-down direction.

[0076] The transistor structure 2 is arranged on the metal layer 32 and electrically connected with the active region 31.

[0077] The semiconductor active region 31 is an active region of an active device on a silicon wafer.

[0078] As an example, the radio frequency switch structure 3 includes the active region 31 and at least one metal layer 32 stacked on the active region 31 in the up-down direction, the transistor structure 2 in the above embodiment is arranged on the metal layer 32, and the transistor structure 2 is electrically connected with the active region 31, thereby ensuring the realization of the switching function of the transistor structure 2.

[0079] In an embodiment, as shown in FIG. 1, the radio frequency switch structure 3 includes the transistor structure 2, and the transistor structure 2 is arranged on the metal layer 32 in the up-down direction. Figure 4 As an example, the radio frequency switch structure 3 includes the transistor structure 2, and the transistor structure 2 is arranged on the metal layer 32 in the up-down direction.

[0080] In the above embodiment, M is the number of the transistor structures 2, and M is a positive integer greater than or equal to 2, that is, M≥2.

[0081] As an example, the radio frequency switch structure 3 includes M transistor structures 2, and the M transistor structures 2 are stacked, so that the radio frequency switch structure 3 can process a radio frequency signal with higher power and improve the overall performance. In this example, the M transistor structures 2 are arranged on at least two metal layers 32 in the up-down direction, so that the lengths of the conductive combs 12 in the M transistor structures 2 are configured to increase from top to bottom, that is, the length of the conductive comb 12 of the transistor structure 2 arranged on the uppermost metal layer 32 is the smallest, and vice versa, the length of the conductive comb 12 of the transistor structure 2 arranged on the lowermost metal layer 32 is the longest.

[0082] In this example, the M transistor structures 2 are arranged on at least two metal layers 32 in the up-down direction, so that the lengths of the conductive combs 12 in the M transistor structures 2 are configured to increase from top to bottom, so that the end of the conductive comb 12 of the transistor structure 2 on the i-1 metal layer 32 is connected with the middle region (i.e., non-end) of the conductive comb 12 of the transistor structure 2 on the i metal layer 32. After the current converges, it flows to the end of the conductive comb 12 of the transistor structure 2 on the i metal layer 32 to the i+1 layer, so that the M transistor structures 2 can process a radio frequency signal with higher power and improve the overall performance.

[0083] In an embodiment, as shown in FIG. 1, the radio frequency switch structure 3 includes the transistor structure 2, and the transistor structure 2 is arranged on the metal layer 32 in the up-down direction. Figure 5 In this example, the M transistor structures are arranged in sequence, so that the sources of the M transistor structures are connected and the drains of the M transistor structures are connected.

[0084] As an example, the M transistor structures are arranged in sequence, the source 21 of the M transistor structures 2 are connected and the drain 22 of the M transistor structures 2 are connected, so that the radio frequency switch structure 3 can process radio frequency signals with higher power, and improve the overall performance.

[0085] The above-described embodiments are only used to illustrate the technical solutions of the present application, rather than limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that the technical solutions recorded in the foregoing embodiments can be modified, or some technical features can be replaced by equivalent ones; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application, and should be included in the protection scope of the present application.

Claims

1. A radio frequency switch structure, characterized by The active region and at least one metal layer stacked on the active region in the up-down direction are included; The radio frequency switch structure further includes M transistor structures, the M transistor structures are arranged on the at least two metal layers in the up-down direction and are electrically connected with the active region, the length of the conductive comb finger in the M transistor structures is configured to increase from top to bottom, and M is a positive integer greater than or equal to 2; The transistor structure includes a gate, a source and a drain, the source and / or the drain is an electrode structure, the electrode structure includes a comb finger connecting part, N conductive comb fingers extending from the comb finger connecting part in the same direction perpendicular to the comb finger connecting part, N is a positive integer greater than or equal to 2, and the angle between the conductive comb finger and the comb finger connecting part is an obtuse angle.

2. The radio frequency switch structure of claim 1, wherein, The M transistor structures are arranged in sequence, the sources of the M transistor structures are connected, and the drains of the M transistor structures are connected.

3. The radio frequency switch structure of claim 1, wherein, The conductive comb finger and the comb finger connecting part are connected in an arc shape.

4. The radio frequency switch structure of claim 1, wherein, The electrode structure further includes 2N connection extension parts extending from the comb finger connecting part in the same direction perpendicular to the comb finger connecting part; Each of the two sides of the conductive comb finger is connected to the comb finger connecting part by using one connection extension part; The angle between the connection extension part and the conductive comb finger is an obtuse angle, and the angle between the connection extension part and the comb finger connecting part is an obtuse angle.

5. The radio frequency switch structure of claim 1, wherein, The radial cross-sectional area of the conductive comb finger is configured such that the radial cross-sectional area near one end of the comb finger connecting part is greater than the radial cross-sectional area of other parts away from the comb finger connecting part.

6. The radio frequency switch structure of claim 1, wherein, The radial cross-sectional area of the conductive comb finger is configured to decrease in sequence in the extension direction from the one end near the comb finger connecting part.

7. The radio frequency switch structure of claim 6, wherein, The axial cross section of the conductive comb finger is isosceles trapezoidal.

8. The radio frequency switch structure of claim 1, wherein, The source includes a source connecting part and N source comb fingers extending from the source connecting part in a first direction perpendicular to the source connecting part; The drain includes a drain connecting part and N drain comb fingers extending from the drain connecting part in a second direction perpendicular to the drain connecting part; The source connecting part and the drain connecting part are arranged in parallel and opposite directions, and the first direction and the second direction are opposite directions.

9. The radio frequency switch structure of claim 8, wherein, N source comb fingers and N drain comb fingers are arranged in an interlaced manner in the connecting part axial direction.

10. The radio frequency switch structure of claim 8, wherein, The projection of N source comb fingers and N drain comb fingers in the connecting part axial direction does not overlap.

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