Light-emitting diode with high airtightness and manufacturing method thereof

Abstract

A highly airtight light-emitting diode (LED) comprises a substrate, a reflective ring, and a LED chip. The reflective ring is disposed on the substrate, forming a housing space between the reflective ring and the substrate. The LED chip is disposed on the substrate and located within the housing space. The substrate has a first organic coating on its surface, the reflective ring has a second organic coating on its surface, and the LED chip has a third organic coating on its surface. The housing space is filled with a filling material. These multiple organic coatings enhance the LED's airtightness, thereby effectively extending its service life.

Description

Technical Field

[0001] The present invention relates to a light emitting diode and a method for manufacturing the same, in particular to a light emitting diode with high airtightness. The present invention also relates to a method for manufacturing the light emitting diode. Background Art

[0002] Thanks to technological advancements, the performance of light-emitting diodes (LEDs) continues to improve, and their applications are becoming increasingly widespread. LEDs offer numerous advantages, such as high efficiency, energy conservation, and a long service life. However, existing LEDs, due to their poor structural airtightness, are susceptible to light degradation in locations with high levels of sulfides and halides in the air. Consequently, these conditions shorten the lifespan of LEDs. Summary of the Invention

[0003] According to one embodiment of the present invention, a highly airtight light-emitting diode (LED) is provided. The LED comprises a substrate, a reflective ring, and an LED chip. The reflective ring is disposed on the substrate, forming a housing space between the reflective ring and the substrate. The LED chip is disposed on the substrate and located within the housing space. The substrate has a first organic coating on its surface, the reflective ring has a second organic coating on its surface, and the LED chip has a third organic coating on its surface. The housing space is filled with a filling material.

[0004] In one embodiment, a top surface of the filling material has a fourth organic coating.

[0005] In one embodiment, the light emitting diode further includes a bracket, which is disposed on the substrate to support the reflective ring. The top surface of the bracket, the surface of the filling material, and the top surface of the reflective ring form a top plane having a fourth organic coating.

[0006] In one embodiment, the light emitting diode further includes a first soldering pad and a second soldering pad, the first soldering pad and the second soldering pad are disposed in the substrate, and the light emitting diode chip is connected to the first soldering pad and the second soldering pad respectively through two wires.

[0007] In one embodiment, the first organic coating layer, the second organic coating layer, the third organic coating layer, and the fourth organic coating layer are made of low-density polyethylene, silicone resin, or other similar materials.

[0008] According to one embodiment of the present invention, a method for manufacturing a light-emitting diode with high airtightness is provided, which includes the following steps: providing a substrate; forming a first organic coating on a surface of the substrate; disposing a reflective ring on the substrate to form a receiving space between the reflective ring and the substrate; forming a second organic coating on the surface of the reflective ring; disposing a light-emitting diode chip on the substrate and positioned in the receiving space; forming a third organic coating on the surface of the light-emitting diode chip; and filling the receiving space with a filling material.

[0009] In one embodiment, the method for manufacturing a light emitting diode with high airtightness further includes the following step: forming a fourth organic coating layer on the surface of the filling material.

[0010] In one embodiment, the method for manufacturing a light-emitting diode with high airtightness further includes the following steps: placing a bracket on a substrate to support the reflective ring, so that the top surface of the bracket, the surface of the filling material, and the top surface of the reflective ring form a top plane; and forming a fourth organic coating to cover the top plane.

[0011] In one embodiment, the method for manufacturing a light emitting diode with high airtightness further includes the following steps: disposing a first soldering pad and a second soldering pad in a substrate; and connecting the light emitting diode chip to the first soldering pad and the second soldering pad respectively through two wires.

[0012] In one embodiment, the first organic coating layer, the second organic coating layer, the third organic coating layer, and the fourth organic coating layer are made of low-density polyethylene, silicone resin, or other similar materials.

[0013] As described above, the light-emitting diode with high airtightness and the method for manufacturing the same according to the embodiments of the present invention may have one or more of the following advantages:

[0014] (1) In one embodiment of the present invention, the surface of the LED substrate has a first organic coating, the surface of the reflective ring has a second organic coating, and the surface of the LED chip has a third organic coating. These three coatings can effectively prevent external air from entering the LED, thereby preventing contamination of the internal components of the LED and preventing the LED from experiencing light decay. Therefore, the service life of the LED can be significantly improved.

[0015] (2) In one embodiment of the present invention, the top surface of the light-emitting diode bracket, the surface of the filling material, and the top surface of the reflective ring form a top plane, and the top plane has a fourth organic coating. The above-mentioned fourth organic coating can seal the top plane of the light-emitting diode to further improve the airtightness of the light-emitting diode.

[0016] (3) In one embodiment of the present invention, the light-emitting diode has multiple organic coatings, which can effectively seal the light-emitting diode, so that the service life of the light-emitting diode can be significantly improved, thereby reducing the generation of garbage and better meeting the needs of environmental protection.

[0017] (4) In one embodiment of the present invention, the light emitting diode can be applied to various lighting devices and different places, so it has a wider range of applications and more flexible use.

[0018] (5) In one embodiment of the present invention, the structure of the light emitting diode is simple in design and can be manufactured through a simple process. Therefore, the desired effect can be achieved without significantly increasing the cost, and the light emitting diode has great commercial value. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 is a schematic diagram of the structure of a light-emitting diode with high airtightness according to an embodiment of the present invention;

[0020] Figure 2 is a schematic diagram of a light emitting diode with high airtightness according to an embodiment of the present invention;

[0021] Figure 3 FIG. 4 is a flow chart of a method for manufacturing a light emitting diode with high airtightness according to an embodiment of the present invention.

[0022] Description of reference numerals:

[0023] 1-LED with high airtightness; 11-substrate; 12-bracket; 13-reflection ring; 14-LED chip; 15-first solder pad; 16-second solder pad; C1-first organic coating; C2-second organic coating; C3-third organic coating; C4-fourth organic coating; Cw-conductor wire; Fm-filling material; Ts-top plane; S-accommodation space; AR-arrow; S31-S39-step process.

[0024] The detailed features and advantages of the present invention are described in detail in the following embodiments, and the content is sufficient to enable anyone skilled in the relevant art to understand the technical content of the present invention and implement it accordingly. Moreover, based on the content, claims and drawings disclosed in this specification, anyone skilled in the relevant art can easily understand the purposes and advantages of this creation. DETAILED DESCRIPTION

[0025] The following describes embodiments of highly airtight light-emitting diodes and methods for manufacturing the same according to the present invention with reference to the relevant drawings. For clarity and ease of illustration, the dimensions and proportions of the components in the drawings may be exaggerated or reduced. In the following description and / or claims, when a component is referred to as being "connected" or "coupled" to another component, it may be directly connected or coupled to the other component or with intervening components. When a component is referred to as being "directly connected" or "directly coupled" to another component, no intervening components are present. Other terms used to describe relationships between components or layers should be interpreted similarly. For ease of understanding, identical components in the following embodiments are labeled with the same reference numerals.

[0026] See also Figure 1, which is a schematic diagram of the structure of a light-emitting diode with high airtightness according to an embodiment of the present invention. As shown in the figure, the light-emitting diode 1 with high airtightness includes a substrate 11, a bracket 12, a reflective ring 13, a light-emitting diode chip 14, a first solder pad 15, and a second solder pad 16.

[0027] The first pad 15 and the second pad 16 are disposed in the substrate 11. The substrate 11 has at least two pad holes, and the first pad 15 and the second pad 16 are disposed in the two pad holes respectively.

[0028] The bracket 12 and the reflective ring 13 are disposed on the substrate 11, such that the bracket 12 can support the reflective ring 13. A receiving space S is formed between the reflective ring 13 and the substrate 11. In one embodiment, the bracket can be annular or include two or more supporting components.

[0029] An LED chip 14 is disposed on the substrate 11 and located within the receiving space S. The LED chip 14 is connected to a first solder pad 15 and a second solder pad 16 via two wires Cw. The receiving space S is filled with a filler material Fm. In one embodiment, the filler material Fm may include phosphor and glue (silicone gel), or other similar materials.

[0030] In this embodiment, the surface of the substrate 11 is coated with a first organic coating C1; the surface of the reflective ring 13 is coated with a second organic coating C2; and the surface of the LED chip 14 is coated with a third organic coating C3. Furthermore, the top surface of the bracket 12, the surface of the filler material Fm, and the top surface of the reflective ring 13 form a top surface TS, which is coated with a fourth organic coating C4. In one embodiment, the first organic coating C1, the second organic coating C2, the third organic coating C3, and the fourth organic coating C4 can be made of low-density polyethylene, silicone, or other similar materials.

[0031] As can be seen above, the surface of the substrate 11 of the LED 1 has a first organic coating C1, the surface of the reflective ring 13 has a second organic coating C2, and the surface of the LED chip 14 has a third organic coating C3. These three coatings effectively prevent external air from entering the LED 1, thereby preventing contamination of the internal components of the LED 1 and preventing LED light degradation. As a result, the service life of the LED 1 can be significantly improved.

[0032] Furthermore, the top surface of the bracket 12 of the LED 1, the surface of the filler material Fm, and the top surface of the reflective ring 13 can form a top plane TS, which can be further covered by the fourth organic coating C4. This structure further enhances the airtightness of the LED 1, ensuring that the LED 1 operates normally despite being unaffected by environmental factors.

[0033] Of course, this embodiment is only used for illustration and does not limit the scope of the present invention. Equivalent modifications or changes made to the light emitting diode with high airtightness according to this embodiment should still be included in the patent scope of the present invention.

[0034] See also Figure 2 , which is a schematic diagram of a light emitting diode with high airtightness according to an embodiment of the present invention. Figure 2 As shown, the LED 1 integrates multiple components, including a substrate 11, a bracket 12, a reflective ring 13, an LED chip 14, a first solder pad 15, and a second solder pad 16. Due to the different thermal expansion coefficients of these components, gaps are easily formed between them (due to thermal expansion and contraction). Therefore, external air can easily enter the LED 1 from the direction of arrow AR in the figure.

[0035] However, by Figure 2 It can be clearly seen that the path through which external air can enter the LED 1 from the direction of arrow AR in the figure has been completely blocked by the first organic coating C1, the second organic coating C2, the third organic coating C3, and the fourth organic coating C4. Therefore, the LED 1 can achieve excellent airtightness.

[0036] Since the LED 1 has the first organic coating C1, the second organic coating C2, the third organic coating C3 and the fourth organic coating C4, it can effectively seal the LED, thereby significantly increasing the service life of the LED, thereby reducing waste generation and better meeting environmental protection requirements.

[0037] Of course, this embodiment is only used for illustration and does not limit the scope of the present invention. Equivalent modifications or changes made to the light emitting diode with high airtightness according to this embodiment should still be included in the patent scope of the present invention.

[0038] It's worth noting that existing LEDs, due to their poor structural airtightness, are prone to light decay in locations with high sulfide and halide content, shortening their lifespan. In contrast, according to embodiments of the present invention, the surface of the LED substrate is coated with a first organic coating, the surface of the reflective ring is coated with a second organic coating, and the surface of the LED chip is coated with a third organic coating. These three coatings effectively prevent external air from entering the LED, protecting the internal components of the LED from contamination and preventing light decay. Consequently, the LED's lifespan can be significantly extended.

[0039] Furthermore, according to an embodiment of the present invention, the top surface of the light-emitting diode bracket, the surface of the filling material, and the top surface of the reflective ring form a top plane, and the top plane has a fourth organic coating. The above-mentioned fourth organic coating can seal the top plane of the light-emitting diode to further improve the airtightness of the light-emitting diode.

[0040] In addition, according to the embodiment of the present invention, the light emitting diode has multiple organic coatings, which can effectively seal the light emitting diode, so that the service life of the light emitting diode can be significantly increased, thereby reducing the generation of waste and better meeting the needs of environmental protection.

[0041] Furthermore, according to the embodiments of the present invention, the light emitting diode can be applied to various lighting devices and different places, and thus has a wider range of applications and more flexible usage.

[0042] Furthermore, according to the embodiments of the present invention, the light emitting diode has a simple structural design and can be manufactured through a simple process. Therefore, the desired effect can be achieved without significantly increasing the cost, which is of great commercial value.

[0043] See also Figure 3 , which is a flow chart of a method for manufacturing a light-emitting diode with high airtightness according to an embodiment of the present invention. As shown in the figure, the method for manufacturing a light-emitting diode according to this embodiment includes the following steps:

[0044] Step S31: providing a substrate.

[0045] Step S32: Forming a first organic coating layer on the surface of the substrate. In this step, a coating process is performed to coat the organic material on the surface of the substrate to form the first organic coating layer.

[0046] Step S33: placing the bracket on the substrate.

[0047] Step S34: The reflective ring is placed on the substrate to form a receiving space between the reflective ring and the substrate. The bracket can support the reflective ring so that the reflective ring can be fixed on the substrate.

[0048] Step S35: Forming a second organic coating layer on the surface of the reflective ring. In this step, a coating process is performed to coat the organic material on the surface of the reflective ring to form the second organic coating layer.

[0049] Step S36: disposing the light emitting diode chip on the substrate and in the accommodating space.

[0050] Step S37: Forming a third organic coating layer on the surface of the LED chip. In this step, a coating process is performed to coat the surface of the LED chip with an organic material to form the third organic coating layer. This coating layer covers all surfaces of the LED chip except the bottom surface.

[0051] Step S38: Filling the accommodating space with a filling material, so that the top surface of the bracket, the surface of the filling material, and the top surface of the reflective ring form a top plane.

[0052] Step S39: Forming a fourth organic coating layer to cover the top surface. In this step, a coating process is performed to apply an organic coating layer to the top surface to form the fourth organic coating layer. The first, second, third, and fourth organic coating layers are made of low-density polyethylene, silicone, or other similar materials.

[0053] Of course, this embodiment is only used for illustration and does not limit the scope of the present invention. Equivalent modifications or changes made to the method for manufacturing a light emitting diode with high airtightness according to this embodiment should still be included in the patent scope of the present invention.

[0054] Although the steps of the method described in the present invention are shown and described in a particular order, the order of operation of each method can be changed, and some steps can be performed in a reverse order, or some steps can be performed simultaneously with other steps. In another embodiment, different steps can be implemented in an intermittent and / or alternating manner.

[0055] In summary, according to the embodiments of the present invention, the surface of the LED substrate is coated with a first organic coating, the surface of the reflective ring is coated with a second organic coating, and the surface of the LED chip is coated with a third organic coating. These three coatings effectively prevent external air from entering the LED, thereby preventing contamination of the LED's internal components and preventing LED light degradation. Consequently, the LED's service life can be significantly extended.

[0056] Furthermore, according to an embodiment of the present invention, the top surface of the light-emitting diode bracket, the surface of the filling material, and the top surface of the reflective ring form a top plane, and the top plane has a fourth organic coating. The above-mentioned fourth organic coating can seal the top plane of the light-emitting diode to further improve the airtightness of the light-emitting diode.

[0057] In addition, according to the embodiment of the present invention, the light emitting diode has multiple organic coatings, which can effectively seal the light emitting diode, so that the service life of the light emitting diode can be significantly increased, thereby reducing the generation of waste and better meeting the needs of environmental protection.

[0058] Furthermore, according to the embodiments of the present invention, the light emitting diode can be applied to various lighting devices and different places, and thus has a wider range of applications and more flexible usage.

[0059] Furthermore, according to the embodiments of the present invention, the light emitting diode has a simple structural design and can be manufactured through a simple process. Therefore, the desired effect can be achieved without significantly increasing the cost, which is of great commercial value.

[0060] It should be noted that although the above embodiments have been described herein, this does not limit the scope of patent protection of the present invention. Therefore, based on the innovative concept of the present invention, changes and modifications to the embodiments described herein, or equivalent structural or equivalent process transformations made using the contents of the present invention's description and drawings, and direct or indirect application of the above technical solutions to other related technical fields are all included in the scope of protection of the present invention's patent.

Claims

1. A light-emitting diode with high airtightness, characterized in that: Include: substrate; A reflective ring is disposed on the substrate so that an accommodation space is formed between the reflective ring and the substrate; A light emitting diode chip is disposed on the substrate and located in the accommodating space; as well as a bracket, disposed on the substrate to support the reflective ring; The surface of the substrate has a first organic coating, the surface of the reflective ring has a second organic coating, the surface of the light-emitting diode chip has a third organic coating, the accommodating space is filled with a filling material, the top surface of the bracket, the surface of the filling material and the top surface of the reflective ring form a top plane, the top plane has a fourth organic coating, and the first organic coating, the second organic coating, the third organic coating and the fourth organic coating are low-density polyethylene or silicone resin.

2. The light-emitting diode with high airtightness according to claim 1, wherein: The device further comprises a first soldering pad and a second soldering pad, wherein the first soldering pad and the second soldering pad are disposed in the substrate, and the light emitting diode chip is connected to the first soldering pad and the second soldering pad respectively through two wires.

3. A method for manufacturing a light-emitting diode with high airtightness, characterized in that: Include: providing a substrate; forming a first organic coating on the surface of the substrate; Disposing a reflective ring on the substrate so as to form an accommodating space between the reflective ring and the substrate; placing a bracket on the substrate to support the reflective ring; forming a second organic coating on the surface of the reflective ring; Disposing a light emitting diode chip on the substrate and in the accommodating space; forming a third organic coating on the surface of the light-emitting diode chip; Filling the accommodating space with a filling material so that the top surface of the bracket, the surface of the filling material, and the top surface of the reflective ring form a top plane; as well as forming a fourth organic coating layer to cover the top plane; The first organic coating, the second organic coating, the third organic coating and the fourth organic coating are low-density polyethylene or silicone resin.

4. The method for manufacturing a light emitting diode with high airtightness according to claim 3, wherein: Also includes: Disposing a first solder pad and a second solder pad in the substrate; and The light emitting diode chip is connected to the first soldering pad and the second soldering pad through two wires respectively.

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