Linear array ultrasound probe

Abstract

A linear array ultrasonic probe, wherein a first conductive layer is processed on the outer wall of a backing body facing an array element layer by gold spraying, electroplating or chemical plating, and / or a second conductive layer is processed on a negative electrode by gold spraying, electroplating or chemical plating, so that the thickness of at least one of the first conductive layer and the second conductive layer can be made thinner, for example, the thickness a≤5 microns. The conductive layer of this thickness can reduce or even eliminate the acoustic impedance effect brought by the conductive layer, thereby improving the performance of the ultrasonic probe.

Description

Technical Field

[0001] The present application relates to an ultrasonic device, and in particular to a linear array ultrasonic probe. Background Art

[0002] The linear array ultrasound probe is an important component of ultrasound diagnostic imaging equipment, which usually includes an acoustic lens, a matching layer, a ground layer, a piezoelectric material (element layer), a circuit board, and a backing block. The working principle of the ultrasound probe is to use the piezoelectric effect to convert the excitation electrical pulse signal of the ultrasound machine into an ultrasonic signal that enters the patient's body, and then converts the ultrasonic echo signal reflected by the tissue into an electrical signal, thereby realizing the detection of the tissue.

[0003] In actual products, the signal connection circuit and grounding of the array element are usually connected by FPC or metal foil. However, due to the material properties of FPC and metal foil and their thickness cannot be made thinner, it is easy to cause acoustic impedance mismatch between the piezoelectric material and the backing block and between the piezoelectric material and the matching layer, thereby affecting the performance of the ultrasonic probe. This effect is particularly obvious for high-frequency and ultra-high-frequency ultrasonic probes. Summary of the invention

[0004] The present application provides a linear array ultrasound probe to demonstrate a lead-out structure of positive and negative electrodes of an array element.

[0005] Based on the above purpose, an embodiment of the present application provides a linear array ultrasound probe, including:

[0006] An array element layer, wherein the array element layer has a plurality of array elements, one end of the array element is a positive electrode, and the other end is a negative electrode;

[0007] A backing layer, wherein the backing layer has a backing body, and the positive electrode of the array element is located on the backing body;

[0008] A matching layer, wherein the matching layer is located on the negative electrode;

[0009] and a circuit board, the circuit board having a positive electrode docking circuit and a negative electrode docking circuit, the positive electrode docking circuit is connected to the positive electrode, and the negative electrode docking circuit is connected to the negative electrode;

[0010] Wherein, the outer wall of the backing body facing the array element layer is provided with a first conductive layer, the positive electrode of the array element is placed on the first conductive layer, and the positive electrode docking circuit is connected to the positive electrode through the first conductive layer; the negative electrode of the array element is provided with a second conductive layer, and the negative electrode docking circuit is connected to the negative electrode through the second conductive layer;

[0011] The thickness a of the first conductive layer is set to be: a≤5 micrometers, and / or the thickness b of the second conductive layer is set to be: b≤5 micrometers;

[0012] The first conductive layer is processed on the outer wall of the backing body facing the array element layer by gold spraying, electroplating or chemical plating, and / or the second conductive layer is processed on the negative electrode by gold spraying, electroplating or chemical plating.

[0013] Based on the above purpose, an embodiment of the present application provides a linear array ultrasound probe, including:

[0014] An array element layer, wherein the array element layer has a plurality of array elements, one end of the array element is a positive electrode, and the other end is a negative electrode;

[0015] A backing layer, wherein the backing layer has a backing body, and the positive electrode of the array element is located on the backing body;

[0016] A matching layer, wherein the matching layer is located on the negative electrode;

[0017] and a circuit board, the circuit board having a positive electrode docking circuit and a negative electrode docking circuit, the positive electrode docking circuit is connected to the positive electrode, and the negative electrode docking circuit is connected to the negative electrode;

[0018] Wherein, the outer wall of the backing body facing the array element layer is provided with a first conductive layer, the positive electrode of the array element is placed on the first conductive layer, and the positive electrode docking circuit is connected to the positive electrode through the first conductive layer; the negative electrode of the array element is provided with a second conductive layer, and the negative electrode docking circuit is connected to the negative electrode through the second conductive layer;

[0019] The first conductive layer is a structure processed as one piece with the outer wall of the backing body, and the first conductive layer is attached to the outer wall of the backing body facing the array element layer; and / or the second conductive layer is a structure processed as one piece with the negative electrode, and the second conductive layer is attached to the negative electrode;

[0020] The first conductive layer is processed on the outer wall of the backing body facing the array element layer by gold spraying, electroplating or chemical plating, and / or the second conductive layer is processed on the negative electrode by gold spraying, electroplating or chemical plating.

[0021] Based on the above purpose, an embodiment of the present application provides a linear array ultrasound probe, including:

[0022] An array element layer, wherein the array element layer has a plurality of array elements, one end of the array element is a positive electrode, and the other end is a negative electrode;

[0023] A backing layer, wherein the backing layer has a backing body, and the positive electrode of the array element is located on the backing body;

[0024] A matching layer, wherein the matching layer is located on the negative electrode;

[0025] and a circuit board, the circuit board having a positive electrode docking circuit and a negative electrode docking circuit, the positive electrode docking circuit is connected to the positive electrode, and the negative electrode docking circuit is connected to the negative electrode;

[0026] Wherein, the outer wall of the backing body facing the array element layer is provided with a first conductive layer, the positive electrode of the array element is placed on the first conductive layer, and the positive electrode docking circuit is connected to the positive electrode through the first conductive layer; the negative electrode of the array element is provided with a second conductive layer, and the negative electrode docking circuit is connected to the negative electrode through the second conductive layer;

[0027] The first conductive layer is a structure integrally processed with the outer wall of the backing body, and the first conductive layer is attached to the outer wall of the backing body facing the array element layer; and / or the second conductive layer is a structure integrally processed with the negative electrode, and the second conductive layer is attached to the negative electrode.

[0028] Based on the above purpose, an embodiment of the present application provides a linear array ultrasound probe, including:

[0029] An array element layer, wherein the array element layer has a plurality of array elements, one end of the array element is a positive electrode, and the other end is a negative electrode;

[0030] A backing layer, wherein the backing layer has a backing body, and the positive electrode of the array element is located on the backing body;

[0031] A matching layer, wherein the matching layer is located on the negative electrode;

[0032] and a circuit board, the circuit board having a positive electrode docking circuit and a negative electrode docking circuit, the positive electrode docking circuit is connected to the positive electrode, and the negative electrode docking circuit is connected to the negative electrode;

[0033] Wherein, the outer wall of the backing body facing the array element layer is provided with a first conductive layer, the positive electrode of the array element is placed on the first conductive layer, and the positive electrode docking circuit is connected to the positive electrode through the first conductive layer; the negative electrode of the array element is provided with a second conductive layer, and the negative electrode docking circuit is connected to the negative electrode through the second conductive layer;

[0034] The thickness a of the first conductive layer is set to a≤5 micrometers, and / or the thickness b of the second conductive layer is set to b≤5 micrometers.

[0035] According to the linear array ultrasonic probe of one embodiment described above, the first conductive layer is processed on the outer wall of the backing body facing the array element layer by gold spraying, electroplating or chemical plating, and / or the second conductive layer is processed on the negative electrode by gold spraying, electroplating or chemical plating, so that the thickness of at least one of the first conductive layer and the second conductive layer can be made thinner, for example, the thickness a≤5 microns. The conductive layer of this thickness can reduce or even eliminate the acoustic impedance effect brought by the conductive layer, thereby improving the performance of the ultrasonic probe. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 A cross-sectional view of the structure related to the linear array ultrasound probe in one embodiment of the present application;

[0037] Figure 2 This is a cross-sectional schematic diagram of processing a first conductive layer on a backing layer in one embodiment of the present application;

[0038] Figure 3 It is a cross-sectional schematic diagram of an embodiment of the present application in which the array element layer is placed on the first conductive layer;

[0039] Figure 4 This is a cross-sectional schematic diagram of adding insulators on both sides of the array element layer in one embodiment of the present application;

[0040] Figure 5 It is a cross-sectional schematic diagram of processing a second conductive layer on the negative electrode and the insulator of the array element layer in one embodiment of the present application. DETAILED DESCRIPTION

[0041] The present invention is further described in detail below by specific embodiments in conjunction with the accompanying drawings. Wherein similar elements in different embodiments adopt associated similar element numbers. In the following embodiments, many detailed descriptions are for making the present application better understood. However, those skilled in the art can easily recognize that some features can be omitted in different situations, or can be replaced by other elements, materials, methods. In some cases, some operations related to the present application are not shown or described in the specification, this is to avoid the core part of the present application being overwhelmed by too much description, and for those skilled in the art, it is not necessary to describe these related operations in detail, and they can fully understand the related operations according to the description in the specification and the general technical knowledge in the art.

[0042] In addition, the features, operations or characteristics described in the specification can be combined in any appropriate manner to form various implementations. At the same time, the steps or actions in the method description can also be interchanged or adjusted in a manner that is obvious to those skilled in the art. Therefore, the various sequences in the specification and the drawings are only for the purpose of clearly describing a certain embodiment and are not meant to be a required sequence, unless otherwise specified that a certain sequence must be followed.

[0043] The serial numbers of the components in this document, such as "first", "second", etc., are only used to distinguish the objects described and do not have any order or technical meaning. The "connection" and "coupling" mentioned in this application, unless otherwise specified, include direct and indirect connections (couplings).

[0044] In one embodiment of the present application, a linear array ultrasound probe (hereinafter referred to as the ultrasound probe) is provided, in which the array elements exhibit a new lead-out structure for the positive and / or negative electrodes of the array elements, especially for high-frequency linear array ultrasound probes with a probe frequency higher than 8 MHZ and ultra-high frequency linear array ultrasound probes with a probe frequency higher than 20 MHZ.

[0045] Please refer to Figure 1-5 The ultrasonic probe includes an array element layer 100, a backing layer 200, a matching layer 300, a circuit board 400 and other related structures. Other related structures may include an acoustic lens 600, etc. These structures may refer to existing ultrasonic probe structures.

[0046] The array element layer 100 is made of piezoelectric material, for example, piezoelectric ceramics. The array element layer 100 is divided into a plurality of array elements, which are arranged linearly. One end of each array element is a positive electrode 110, and the other end is a negative electrode 120, and the positive electrode 110 and the negative electrode 120 are arranged opposite to each other. Figure 1-5 Specifically, the lower end of the array element layer 100 is the positive electrode 110 , and the upper end is the negative electrode 120 .

[0047] The backing layer 200 has a backing body 210, and the backing body 210 is made of various materials suitable for making the backing layer 200. The outer wall of the backing body 210 facing the array element layer 100 is provided with a first conductive layer 220, and the positive electrode 110 of the array element is placed on the first conductive layer 220, and the first conductive layer 220 is conductively connected with the positive electrode 110.

[0048] The negative electrode 120 of the array element is provided with a second conductive layer 130, and the matching layer 300 is placed on the second conductive layer 130. The circuit board 400 has a positive electrode docking circuit and a negative electrode docking circuit, the positive electrode docking circuit is connected to the first conductive layer 220, and the negative electrode docking circuit is connected to the second conductive layer 130. The circuit board 400 can be an FPC (flexible circuit board 400) or other forms of circuit boards 400. The positive electrode docking circuit and the negative electrode docking circuit can be various docking circuits that can be applicable to the first conductive layer 220 and the second conductive layer 130.

[0049] Among them, the thickness of the conductive layer is closely related to the performance improvement of the ultrasonic probe. A thicker thickness will bring a greater impact on the acoustic impedance, especially in high-frequency ultrasonic probes and ultra-high-frequency ultrasonic probes, which are more sensitive to the impact of the conductive layer thickness.

[0050] To reduce or eliminate the effect of the conductive layer thickness on the performance of the ultrasound probe, please refer to Figure 1-5 In one embodiment, the thickness a of the first conductive layer 220 is: a≤5 microns, and / or the thickness b of the second conductive layer 130 is: b≤5 microns. Through repeated experiments and analysis and comparison by the inventors, the conductive layer of this thickness can reduce or even eliminate the acoustic impedance effect brought by the conductive layer, and improve the performance of the ultrasonic probe. In particular, when the thickness b of the second conductive layer 130 is ≤5 microns, the propagation effect of ultrasonic waves to the detection object will be greatly improved, the quality of ultrasonic signals will be improved, and the imaging effect will be improved.

[0051] In one embodiment, in order to achieve the purpose of the thickness a≤5 microns or b≤5 microns, the first conductive layer 220 is processed on the outer wall of the backing body 210 facing the array element layer 100 by gold spraying, electroplating or chemical plating. At this time, the first conductive layer 220 and the backing body 210 together constitute a partially conductive backing layer 200; and / or the second conductive layer 130 is processed on the end face of the negative electrode 120 by gold spraying, electroplating, chemical plating or other processing technology. The gold spraying, electroplating, chemical plating or other processing technology can form a nano-scale or micro-scale bonding layer (i.e., the first conductive layer 220 and / or the second conductive layer 130) on the outer wall of the backing body 210 and / or the end face of the negative electrode 120. The bonding layer is bonded to the end face of the backing body 210 or the negative electrode 120 as a whole. Through close connection, the first conductive layer 220 and / or the second conductive layer 130 can achieve the conductivity requirement with only a relatively thin thickness, thereby reducing the thickness of the conductive layer. Among them, the gold spraying method has relatively low cost and can better obtain a more uniform thickness of the conductive layer.

[0052] Compared with the separate manufacturing structure in which the flexible circuit board is directly connected to the positive electrode of the array element (that is, the flexible circuit board and the positive electrode of the array element are manufactured separately and then assembled together) and the separate manufacturing structure of the second conductive layer 130 and the negative electrode 120 of the array element (that is, the second conductive layer 130 and the negative electrode 120 of the array element are manufactured separately and then assembled together), this integrated processing structure can reduce the thickness of the first conductive layer 220 and / or the second conductive layer 130, and can facilitate making the thickness thinner during manufacturing, so as to reduce or eliminate the acoustic impedance effect caused by the conductive layer.

[0053] In one embodiment, both the first conductive layer 220 and the second conductive layer 130 can be made by the above-mentioned gold spraying, electroplating or chemical plating process. In another embodiment, only the first conductive layer 220 or the second conductive layer 130 can be made by the above-mentioned gold spraying, electroplating or chemical plating process. For example, when the first conductive layer 220 is made by the above-mentioned processes, the second conductive layer 130 can adopt an existing structure that can achieve the purpose of leading out the negative electrode 120 of the array element, for example, the second conductive layer 130 can be implemented by copper foil or other structures. When the second conductive layer 130 is made by the above-mentioned processes, the first conductive layer 220 can adopt an existing structure that can achieve the purpose of leading out the positive electrode 110 of the array element, for example, the first conductive layer 220 can adopt various existing positive electrode 110 leading structures, or the first conductive layer 220 can be omitted, and the circuit board 400 is directly set under the positive electrode 110 of the array element, and the two are directly connected.

[0054] On the other hand, the present application further provides an embodiment, in which the first conductive layer 220 is a structure processed as one piece with the outer wall of the backing body 210, and the first conductive layer 220 is attached to the outer wall of the backing body 210 facing the array element layer 100; and / or the second conductive layer 130 is a structure processed as one piece with the end surface of the negative electrode 120, and the second conductive layer 130 is attached to the end surface of the negative electrode 120;

[0055] Furthermore, the first conductive layer 220 is processed on the outer wall of the backing body 210 facing the array element layer 100 by gold spraying, electroplating or chemical plating, and / or the second conductive layer 130 is processed on the end surface of the negative electrode 120 by gold spraying, electroplating or chemical plating.

[0056] This embodiment provides a method of bonding the first conductive layer 220 to the backing body 210 and / or bonding the second conductive layer 130 to the end surface of the negative electrode 120 as one body by gold spraying, electroplating, chemical plating or other processing techniques. This integrated processing structure can reduce the thickness of the first conductive layer 220 and / or the second conductive layer 130, and can facilitate making the thickness thinner during manufacturing, so as to reduce or eliminate the acoustic impedance effect caused by the conductive layer. Of course, during manufacturing, conductive layers of different thicknesses can also be designed according to actual needs through this integrated processing structure.

[0057] On the other hand, the present application also provides an embodiment, in which the first conductive layer 220 is a structure processed as one piece with the outer wall of the backing body 210, and the first conductive layer 220 is attached to the outer wall of the backing body 210 facing the array element layer 100; and / or, the second conductive layer 130 is a structure processed as one piece with the end face of the negative electrode 120, and the second conductive layer 130 is attached to the end face of the negative electrode 120.

[0058] Moreover, in this embodiment, the integrated structure can be achieved by processes such as gold spraying, electroplating, and chemical plating, but it is not limited to. It can also be achieved by other means to achieve the purpose of bonding the first conductive layer 220 and the backing body 210 into one and / or bonding the second conductive layer 130 and the end face of the negative electrode 120 into one.

[0059] In one embodiment, the thickness a of the first conductive layer 220 can be 500 nanometers ≤ a ≤ 5 micrometers, and the thickness b of the second conductive layer 130 can be 500 nanometers ≤ b ≤ 5 micrometers. The conductive layer of this thickness can reduce or even eliminate the acoustic impedance effect caused by the conductive layer, thereby improving the performance of the ultrasonic probe.

[0060] The means for achieving the thickness a or b may include but are not limited to the above-mentioned overspray gold, electroplating, chemical plating or other processing techniques, and may also include but are not limited to the above-mentioned structure in which the first conductive layer 220 and the backing body 210 are bonded together and / or the second conductive layer 130 and the end face of the negative electrode 120 are bonded together.

[0061] Usually, the positive electrodes 110 of the array elements are isolated from each other, for example, the positive electrode 110 end of the piezoelectric material can be cut into a plurality of units by cutting. The negative electrodes 120 of the array elements are isolated from each other, for example, the piezoelectric material can be directly cut into a plurality of separate individuals when the positive electrode 110 is cut. Alternatively, in some embodiments, one end of the negative electrode 120 of the piezoelectric material can also remain connected, that is, one end of all the negative electrodes 120 is connected as a whole, and only one end of the positive electrode 110 is cut and separated.

[0062] In order to connect with the corresponding positive electrodes 110 respectively, the first conductive layer 220 is divided into a plurality of conductive units, each conductive unit is conductively connected to the positive electrode 110 of an array element, and these conductive units are respectively connected to the positive electrode connecting circuit to transmit the excitation electric pulse signal from the ultrasonic system to each useful positive electrode 110.

[0063] The cutting of the first conductive layer 220 can be performed together with the cutting of the positive electrode 110 of the array element. For example, in one embodiment, a large area of ​​the first conductive layer 220 is first processed on the backing body 210, and then the piezoelectric material is installed on the first conductive layer 220. Then, the piezoelectric material and the first conductive layer 220 are cut together to form a plurality of separated units. Each independent unit in the piezoelectric material is an array element, and each independent unit on the first conductive layer 220 is a conductive unit.

[0064] Since the negative electrode 120 of the array element does not have to be led out individually, the second conductive layer 130 can be an integral structure. Of course, when necessary, the second conductive layer 130 can also be configured to be composed of a plurality of units.

[0065] Please refer to Figure 1-5 , the first conductive layer 220 extends from the side of the backing body 210 facing the array element layer 100 to at least one side of the backing body 210, until it extends to the side of the backing body 210, so as to facilitate the conduction with the circuit board 400. As shown in the figure, the first conductive layer 220 extends from two opposite sides of the backing body 210. In addition, in other embodiments, the first conductive layer 220 may also be provided only on the side of the backing body 210 facing the array element layer 100.

[0066] For further information, please refer to Figure 1-5 In the above various embodiments, an insulator 500 may be further included. The insulator 500 is disposed on at least one side of the array element layer 100. The insulator 500 may be made of various insulating materials, such as resin. A third conductive layer 510 is attached to the outer wall of the insulator 500. The third conductive layer 510 may be processed on the outer wall of the insulator 500 by, but not limited to, gold spraying, electroplating, chemical plating or other processing techniques.

[0067] The second conductive layer 130 is electrically connected to the third conductive layer 510 , and the negative electrode connection circuit can be electrically connected to the negative electrode 120 through the third conductive layer 510 and the second conductive layer 130 .

[0068] In one embodiment, the thickness c of the third conductive layer 510 may be: 500 nanometers ≤ c ≤ 5 micrometers.

[0069] The insulator 500 may be a prefabricated component and assembled on the backing layer 200. Alternatively, the insulator 500 may also be directly processed and prepared on the side of the element layer 100 and the surface of the first conductive layer 220 after the first conductive layer 220 and the element layer 100 are arranged. For example, the insulator 500 is formed on the side of the first conductive layer 220 and the element layer 100 by spraying, coating, etc. The insulator 500 insulates and separates the second conductive layer 130 and the third conductive layer 510 from the first conductive layer 220 to prevent short circuit.

[0070] For further information, please refer to Figure 1-5 In one embodiment, the second conductive layer 130 and the third conductive layer 510 are processed as a single conductive layer attached to the end surface of the negative electrode 120 and the outer wall of the insulator 500. That is, the second conductive layer 130 and the third conductive layer 510 can be manufactured on the end surface of the negative electrode 120 and the outer wall of the insulator 500 at the same time through one processing, and the two are bonded as one.

[0071] In one embodiment, the insulator 500 can be aligned with the array element layer 100, so as to ensure the continuity of the second conductive layer 130 and the third conductive layer 510 in one process, so that the conductive performance is more stable. Of course, in other embodiments, the connection between the insulator 500 and the array element layer 100 can also be curved or stepped.

[0072] Of course, in other embodiments, the second conductive layer 130 can be manufactured on the end surface of the negative electrode 120, and the third conductive layer 510 can be manufactured on the outer wall of the insulator 500, and then the third conductive layer 510 and the second conductive layer 130 can be connected to the negative electrode 120 through assembly.

[0073] For further information, please refer to Figure 1-5 In one embodiment, the insulator 500 is located on the side of the backing layer 200, and a gap 520 is left between the insulator 500 and the backing layer 200. The first conductive layer 220 extends into the gap 520, thereby better insulating and separating the second conductive layer 130 and the third conductive layer 510 from the first conductive layer 220 to prevent short circuit. The insulator 500 can also protect the first conductive layer 220. Please refer to Figure 4 The circuit board 400 can extend into the gap 520, and the docking end of the positive electrode docking circuit can be arranged in the gap 520. Therefore, the insulator 500 can also ensure the docking effect of the positive electrode docking circuit and the first conductive layer 220, thereby preventing the connection between the positive electrode docking circuit and the first conductive layer 220 from being damaged by other components during the assembly and use of the ultrasonic probe, thereby improving the stability of the lead-out of the positive electrode 110.

[0074] For further information, please refer to Figure 1 , 3 In one embodiment, there are at least two insulators 500 which are relatively distributed on two opposite sides of the array element layer 100 and the backing layer 200. The insulators 500 also form gaps 520 on two opposite sides of the backing body 210 to accommodate the first conductive layer 220 and the circuit board 400.

[0075] exist Figure 3 and 4In the illustrated embodiment, the circuit board 400 is disposed below the backing layer 200 , with both ends of the circuit board 400 inserted into the gap 520 between the insulator 500 and the backing layer 200 , and connected to the corresponding first conductive layer 220 .

[0076] In one embodiment, please refer to Figure 5 The third conductive layer 510 on the insulator 500 extends from the outer wall of the insulator 500 to the circuit board 400 , thereby connecting with the negative electrode on the circuit board 400 to form a conductive circuit.

[0077] The above specific examples are used to illustrate the present invention, which is only used to help understand the present invention and is not intended to limit the present invention. For those skilled in the art, according to the concept of the present invention, some simple deductions, modifications or substitutions can be made.

Claims

1. A linear array ultrasonic probe, characterized in that: include: An array element layer, wherein the array element layer has a plurality of array elements, one end of the array element is a positive electrode, and the other end is a negative electrode; A backing layer, wherein the backing layer has a backing body, and the positive electrode of the array element is located on the backing body; A matching layer, wherein the matching layer is located on the negative electrode; and a circuit board, the circuit board having a positive electrode docking circuit and a negative electrode docking circuit, the positive electrode docking circuit is connected to the positive electrode, and the negative electrode docking circuit is connected to the negative electrode; Wherein, the outer wall of the backing body facing the array element layer is provided with a first conductive layer, the positive electrode of the array element is placed on the first conductive layer, and the positive electrode docking circuit is connected to the positive electrode through the first conductive layer; the negative electrode of the array element is provided with a second conductive layer, and the negative electrode docking circuit is connected to the negative electrode through the second conductive layer; The thickness a of the first conductive layer is set to be: a≤5 micrometers, and / or the thickness b of the second conductive layer is set to be: b≤5 micrometers; The first conductive layer is an integral structure processed by gold spraying, electroplating or chemical plating and attached to the outer wall of the backing body, and the first conductive layer extends from a side of the backing body facing the array element layer to a side of the backing body to facilitate conduction with the circuit board; and / or the second conductive layer is an integral structure processed by gold spraying, electroplating or chemical plating and attached to the negative electrode; The positive electrodes of the array elements are isolated from each other, the negative electrodes of the array elements are isolated from each other or connected as one, the first conductive layer is divided into a plurality of conductive units, each conductive unit is electrically connected to a positive electrode of the array element, and the conductive units are all connected to the positive electrode circuit; The linear array ultrasonic probe is a high-frequency linear array ultrasonic probe with a probe frequency higher than 8 MHZ or an ultra-high-frequency linear array ultrasonic probe with a probe frequency higher than 20 MHZ.

2. The linear array ultrasound probe according to claim 1, characterized in that: The first conductive layer is a structure processed into one piece with the outer wall of the backing body; and / or the second conductive layer is a structure processed into one piece with the negative electrode.

3. The linear array ultrasound probe according to claim 1, characterized in that: It also includes an insulator, which is arranged on at least one side of the array element layer, and a third conductive layer is attached to the outer wall of the insulator, and the third conductive layer is processed on the outer wall of the insulator by gold spraying, electroplating or chemical plating. The second conductive layer is connected to the third conductive layer, and the second conductive layer is connected to the negative electrode docking circuit through the third conductive layer. The insulator insulates the second conductive layer and the third conductive layer from the first conductive layer.

4. The linear array ultrasound probe according to claim 3, characterized in that: The second conductive layer and the third conductive layer are integrally processed and attached to the outer wall of the negative electrode and the insulator.

5. The linear array ultrasound probe according to claim 3, characterized in that: The insulator is located at the side of the backing layer, a gap is left between the insulator and the backing layer, and the first conductive layer extends into the gap.

6. The linear array ultrasound probe according to claim 3, characterized in that: There are at least two insulators, which are distributed on two opposite sides of the array element layer and the backing layer.

7. A linear array ultrasonic probe, characterized in that: include: An array element layer, wherein the array element layer has a plurality of array elements, one end of the array element is a positive electrode, and the other end is a negative electrode; A backing layer, wherein the backing layer has a backing body, and the positive electrode of the array element is located on the backing body; A matching layer, wherein the matching layer is located on the negative electrode; and a circuit board, the circuit board having a positive electrode docking circuit and a negative electrode docking circuit, the positive electrode docking circuit is connected to the positive electrode, and the negative electrode docking circuit is connected to the negative electrode; Wherein, the outer wall of the backing body facing the array element layer is provided with a first conductive layer, the positive electrode of the array element is placed on the first conductive layer, and the positive electrode docking circuit is connected to the positive electrode through the first conductive layer; the negative electrode of the array element is provided with a second conductive layer, and the negative electrode docking circuit is connected to the negative electrode through the second conductive layer; The first conductive layer is a structure integrally processed with the outer wall of the backing body, the first conductive layer is attached to the outer wall of the backing body, and the first conductive layer extends from a side of the backing body facing the array element layer to a side of the backing body to facilitate conduction with the circuit board; and / or the second conductive layer is a structure integrally processed with the negative electrode, the second conductive layer is attached to the negative electrode; Wherein, the first conductive layer is an integrated structure processed on the outer wall of the backing body by gold spraying, electroplating or chemical plating, and / or the second conductive layer is an integrated structure processed on the negative electrode by gold spraying, electroplating or chemical plating.

8. The linear array ultrasound probe according to claim 7, characterized in that: It also includes an insulator, which is disposed on at least one side of the array element layer, and a third conductive layer is attached to the outer wall of the insulator, wherein the second conductive layer is connected to the third conductive layer, and the second conductive layer is connected to the negative electrode docking circuit via the third conductive layer; the insulator insulates the second conductive layer and the third conductive layer from the first conductive layer; The third conductive layer is processed on the outer wall of the insulator by gold spraying, electroplating or chemical plating.

9. The linear array ultrasound probe according to claim 8, characterized in that: The second conductive layer and the third conductive layer are integrally processed and attached to the outer wall of the negative electrode and the insulator.

10. The linear array ultrasound probe according to claim 8, characterized in that: The insulator is located at the side of the backing layer, a gap is left between the insulator and the backing layer, and the first conductive layer extends into the gap.

11. The linear array ultrasound probe according to claim 8, characterized in that: There are at least two insulators, which are distributed on two opposite sides of the array element layer and the backing layer.

12. The linear array ultrasound probe according to claim 8, characterized in that: The thickness a of the first conductive layer is 500 nanometers ≤ a ≤ 5 micrometers, the thickness b of the second conductive layer is 500 nanometers ≤ b ≤ 5 micrometers, and the thickness c of the third conductive layer is 500 nanometers ≤ c ≤ 5 micrometers.

13. The linear array ultrasound probe according to any one of claims 7 to 12, characterized in that: The positive electrodes of the array elements are isolated from each other, the negative electrodes of the array elements are isolated from each other or connected as one, the first conductive layer is divided into a plurality of conductive units, and each conductive unit is electrically connected to a positive electrode of the array element.

14. The linear array ultrasound probe according to any one of claims 7 to 12, characterized in that: The linear array ultrasonic probe is a high-frequency linear array ultrasonic probe with a probe frequency higher than 8 MHZ or an ultra-high-frequency linear array ultrasonic probe with a probe frequency higher than 20 MHZ.

15. A linear array ultrasonic probe, characterized in that: include: An array element layer, wherein the array element layer has a plurality of array elements, one end of the array element is a positive electrode, and the other end is a negative electrode; A backing layer, wherein the backing layer has a backing body, and the positive electrode of the array element is located on the backing body; A matching layer, wherein the matching layer is located on the negative electrode; and a circuit board, the circuit board having a positive electrode docking circuit and a negative electrode docking circuit, the positive electrode docking circuit is connected to the positive electrode, and the negative electrode docking circuit is connected to the negative electrode; Wherein, the outer wall of the backing body facing the array element layer is provided with a first conductive layer, the positive electrode of the array element is placed on the first conductive layer, and the positive electrode docking circuit is connected to the positive electrode through the first conductive layer; the negative electrode of the array element is provided with a second conductive layer, and the negative electrode docking circuit is connected to the negative electrode through the second conductive layer; The first conductive layer is a structure integrated with the outer wall of the backing body, the first conductive layer is an integrated structure attached to the outer wall of the backing body, and the first conductive layer extends from a side of the backing body facing the array element layer to a side of the backing body to facilitate conduction with the circuit board; and / or, the second conductive layer is a structure integrated with the negative electrode, and the second conductive layer is an integrated structure attached to the negative electrode.

16. The linear array ultrasound probe according to claim 15, characterized in that: The invention also includes an insulator, which is arranged on at least one side of the array element layer, and a third conductive layer is attached to the outer wall of the insulator, wherein the second conductive layer is connected to the third conductive layer, and the second conductive layer is connected to the negative electrode docking circuit through the third conductive layer; the insulator insulates the second conductive layer and the third conductive layer from the first conductive layer.

17. The linear array ultrasound probe according to claim 16, characterized in that: The second conductive layer and the third conductive layer are integrally processed and attached to the outer wall of the negative electrode and the insulator.

18. The linear array ultrasound probe according to claim 16, characterized in that: The insulator is located at the side of the backing layer, a gap is left between the insulator and the backing layer, and the first conductive layer extends into the gap.

19. The linear array ultrasound probe according to claim 16, characterized in that: There are at least two insulators, which are distributed on two opposite sides of the array element layer and the backing layer.

20. The linear array ultrasound probe according to claim 16, characterized in that: The first conductive layer, the second conductive layer and the third conductive layer are formed by gold spraying.

21. The linear array ultrasound probe according to claim 16, characterized in that: The thickness a of the first conductive layer is 500 nanometers ≤ a ≤ 5 micrometers, the thickness b of the second conductive layer is 500 nanometers ≤ b ≤ 5 micrometers, and the thickness c of the third conductive layer is 500 nanometers ≤ c ≤ 5 micrometers.

22. The linear array ultrasound probe according to any one of claims 15 to 21, characterized in that: The positive electrodes of the array elements are isolated from each other, the negative electrodes of the array elements are isolated from each other or connected as one, the first conductive layer is divided into a plurality of conductive units, each conductive unit is electrically connected to a positive electrode of the array element, and the conductive units are all connected to the positive electrode circuit.

23. The linear array ultrasound probe according to any one of claims 15 to 21, characterized in that: The linear array ultrasonic probe is a high-frequency linear array ultrasonic probe with a probe frequency higher than 8 MHZ or an ultra-high-frequency linear array ultrasonic probe with a probe frequency higher than 20 MHZ.

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