Method for manufacturing radiographic imaging device

Abstract

A method for manufacturing a radiographic imaging device, comprising: providing a flexible substrate on a support body and forming a sensor substrate on which a plurality of pixels for accumulating electric charge generated in response to light converted from radiation are provided; forming a conversion layer on a fixing plate for converting radiation into light; providing a conversion layer on a first surface of the substrate on which the pixels are provided so as to be opposed to a surface opposite to the fixing plate; fixing one end of a flexible cable to the sensor substrate; fixing the flexible cable to the fixing plate; and peeling the sensor substrate on which the conversion layer and the fixing plate are provided from the support body.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a radiation imaging device. Background Art

[0002] Conventionally, radiographic imaging devices that perform radiographic imaging for the purpose of medical diagnosis are known. These radiographic imaging devices use a radiation detector that detects radiation that has passed through a subject and generates a radiographic image.

[0003] Some radiation detectors include a conversion layer, such as a scintillator, that converts radiation into light, and a substrate provided with a plurality of pixels that accumulate charge generated by the light converted by the conversion layer. A flexible substrate is known as the base material of the sensor substrate of such radiation detectors (see, for example, Japanese Patent Application Laid-Open No. 2018-155699). Using a flexible substrate can reduce the weight of the radiation imaging device and sometimes facilitate imaging of the subject. Summary of the Invention

[0004] Technical issues to be solved by the invention

[0005] In the manufacture of radiographic imaging devices using a flexible substrate, a substrate made of a flexible substrate may be bent. If a substrate connected to a flexible cable is bent, the flexible cable may cause damage to the substrate.

[0006] The present invention provides a method for manufacturing a radiation imaging device capable of suppressing a malfunction caused by a flexible cable connected to a substrate when the substrate is bent during manufacturing.

[0007] Means for solving technical problems

[0008] The manufacturing method of the radiation imaging device of the first embodiment of the present invention includes: a process of providing a flexible substrate on a support body and forming a substrate in a pixel area of ​​the substrate, wherein a plurality of pixels for accumulating electric charges generated according to light converted from radiation are provided on the substrate; a process of providing a conversion layer for converting radiation into light on the surface of the substrate on which the pixels are provided; a process of connecting one end of a flexible cable connected to a circuit part to the substrate; a process of providing a fixing plate on the surface of the conversion layer opposite to the substrate side; a process of fixing the flexible cable to the fixing plate; and a process of peeling off the substrate on which the conversion layer and the fixing plate are provided from the support body.

[0009] The manufacturing method of the radiation imaging device of the second embodiment of the present invention includes: a process of setting a flexible substrate on a support body and forming a substrate in a pixel area of ​​the substrate, on which a plurality of pixels for accumulating charges generated according to light converted from radiation are set; a process of forming a conversion layer for converting radiation into light on a fixed plate; a process of setting a conversion layer on the surface of the substrate where the pixels are set so that it is opposite to the surface on the side opposite to the fixed plate; a process of connecting one end of a flexible cable connected to a circuit part to the substrate; a process of fixing the flexible cable to the fixed plate; and a process of peeling off the substrate on which the conversion layer and the fixed plate are set from the support body.

[0010] Furthermore, a third aspect of the present invention provides a method for manufacturing a radiation imaging device according to the first or second aspect, wherein the flexible cable is fixed to a surface of the fixing plate opposite to the surface on which the conversion layer is provided.

[0011] Furthermore, a fourth aspect of the present invention provides a method for manufacturing a radiation imaging device according to the first or second aspect, wherein the flexible cable is fixed to the surface of the fixing plate on which the conversion layer is provided.

[0012] Furthermore, the manufacturing method of the radiation imaging device of the fifth embodiment of the present invention, in the manufacturing method of the radiation imaging device of any one of the first to fourth embodiments, further includes: a process of electrically connecting the circuit unit to the flexible cable before the process of peeling the substrate from the support body; and a process of fixing the circuit unit to the surface of the fixing plate on the opposite side to the surface on which the conversion layer is provided.

[0013] Furthermore, in the manufacturing method of the radiation imaging device of the sixth aspect of the present invention, in the manufacturing method of the radiation imaging device of any one of the first to fifth aspects, a conversion layer is made to adhere tightly to the surface of the substrate on which pixels are provided by using a reduced pressure sealing method, thereby providing a conversion layer on the surface of the substrate on which pixels are provided.

[0014] Furthermore, the manufacturing method of the radiation imaging device of the seventh embodiment of the present invention, in the manufacturing method of the radiation imaging device of any one of the first to sixth embodiments, further includes, after peeling the substrate from the support body, a process of providing a reinforcing substrate having higher rigidity than the base material on the surface of the substrate opposite to the surface on which the conversion layer is provided.

[0015] Furthermore, the manufacturing method of the radiation imaging device of the eighth aspect of the present invention further includes, in the manufacturing method of the radiation imaging device of the seventh aspect, a process of housing the substrate, the conversion layer, the fixing plate and the circuit part in a frame having the reinforcing substrate as the top plate.

[0016] Furthermore, the manufacturing method of the radiation imaging device of the 9th embodiment of the present invention further includes, in the manufacturing method of the radiation imaging device of any one of the 1st to 7th embodiments, a process of sequentially housing the substrate, the conversion layer, the fixing plate and the circuit unit in the frame in the order of configuration from the side irradiated with radiation.

[0017] Furthermore, in the method for manufacturing a radiation imaging device according to a tenth aspect of the present invention, in the method for manufacturing a radiation imaging device according to any one of the first to ninth aspects, the main component of the material of the fixing plate is carbon.

[0018] Effects of the Invention

[0019] According to the present invention, when the substrate is bent during manufacturing, it is possible to suppress a malfunction caused by a flexible cable connected to the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 This is a block diagram showing an example of a configuration of a main portion of an electrical system in a radiation imaging device according to an embodiment.

[0021] Figure 2A This is a plan view of an example of the radiation detector according to the embodiment as viewed from the first surface side of the substrate.

[0022] Figure 2B This is a plan view of an example of a radiation detector according to the embodiment.

[0023] Figure 3 yes Figure 2A FIG. 1 is a cross-sectional view taken along line AA of the radiation detector according to the first embodiment.

[0024] Figure 4 It is a cross-sectional view of an example of the radiation imaging device according to the first embodiment.

[0025] Figure 5A This is a diagram for explaining an example of a method for manufacturing the radiation imaging device according to the first embodiment.

[0026] Figure 5B This is a diagram for explaining an example of a method for manufacturing the radiation imaging device according to the first embodiment.

[0027] Figure 5C This is a diagram for explaining an example of a method for manufacturing the radiation imaging device according to the first embodiment.

[0028] Figure 5D This is a diagram for explaining an example of a method for manufacturing the radiation imaging device according to the first embodiment.

[0029] Figure 5EThis is a diagram for explaining an example of a method for manufacturing the radiation imaging device according to the first embodiment.

[0030] Figure 5F This is a diagram for explaining an example of a method for manufacturing the radiation imaging device according to the first embodiment.

[0031] Figure 5G This is a diagram for explaining an example of a method for manufacturing the radiation imaging device according to the first embodiment.

[0032] Figure 5H This is a diagram for explaining an example of a method for manufacturing the radiation imaging device according to the first embodiment.

[0033] Figure 6 This is a cross-sectional view of the radiation detector according to the second embodiment, taken along line AA.

[0034] Figure 7 It is a cross-sectional view of an example of a radiation imaging device according to the second embodiment.

[0035] Figure 8A This is a diagram for explaining an example of a method for manufacturing the radiation imaging device according to the second embodiment.

[0036] Figure 8B This is a diagram for explaining an example of a method for manufacturing the radiation imaging device according to the second embodiment.

[0037] Figure 8C This is a diagram for explaining an example of a method for manufacturing the radiation imaging device according to the second embodiment.

[0038] Figure 8D This is a diagram for explaining an example of a method for manufacturing the radiation imaging device according to the second embodiment.

[0039] Figure 8E This is a diagram for explaining an example of a method for manufacturing the radiation imaging device according to the second embodiment.

[0040] Figure 8F This is a diagram for explaining an example of a method for manufacturing the radiation imaging device according to the second embodiment.

[0041] Figure 8G This is a diagram for explaining an example of a method for manufacturing the radiation imaging device according to the second embodiment.

[0042] Figure 8H This is a diagram for explaining an example of a method for manufacturing the radiation imaging device according to the second embodiment.

[0043] Figure 9It is a cross-sectional view taken along line AA of the radiation detector according to the third embodiment.

[0044] Figure 10 It is a cross-sectional view of an example of a radiation imaging device according to a third embodiment.

[0045] Figure 11A This is a diagram for explaining an example of a method for manufacturing a radiation imaging device according to the third embodiment.

[0046] Figure 11B This is a diagram for explaining an example of a method for manufacturing a radiation imaging device according to the third embodiment.

[0047] Figure 11C This is a diagram for explaining an example of a method for manufacturing a radiation imaging device according to the third embodiment.

[0048] Figure 11D This is a diagram for explaining an example of a method for manufacturing a radiation imaging device according to the third embodiment.

[0049] Figure 12 These are diagrams for explaining another example of the method for manufacturing the radiation imaging device according to the third embodiment.

[0050] Figure 13 This is a cross-sectional view taken along line AA of the radiation detector according to Modification 1.

[0051] Figure 14 This is a cross-sectional view taken along line AA of a radiation detector according to Modification 2.

[0052] Figure 15 AA line cross-sectional view of the radiation detector according to Modification 3.

[0053] Figure 16 AA line cross-sectional view of the radiation detector according to Modification 4.

[0054] Figure 17 AA line cross-sectional view of the radiation detector according to Modification 5.

[0055] Figure 18A This is a cross-sectional view taken along line AA of the radiation detector according to Modification 6.

[0056] Figure 18B This is a cross-sectional view taken along line AA of the radiation detector according to Modification 6.

[0057] Figure 19A AA line cross-sectional view of the radiation detector according to Modification 7.

[0058] Figure 19B AA line cross-sectional view of the radiation detector according to Modification 7.

[0059] Figure 19C AA line cross-sectional view of the radiation detector according to Modification 7.

[0060] Figure 19D AA line cross-sectional view of the radiation detector according to Modification 7.

[0061] Figure 19E AA line cross-sectional view of the radiation detector according to Modification 7.

[0062] Figure 20 This is a cross-sectional view taken along line AA of the radiation detector according to Modification 8.

[0063] Figure 21 AA line cross-sectional view of the radiation detector according to Modification 9.

[0064] Figure 22 This is a cross-sectional view taken along line AA of a radiation detector according to Modification 10.

[0065] Figure 23 This is a cross-sectional view taken along line AA of a radiation detector according to Modification 11.

[0066] Figure 24A It is a cross-sectional view of a radiation imaging device according to Modification 12.

[0067] Figure 24B It is a cross-sectional view of a radiation imaging device according to Modification 12.

[0068] Figure 25A It is a cross-sectional view of a radiation imaging device according to Modification 13.

[0069] Figure 25B It is a cross-sectional view of a radiation imaging device according to Modification 13. DETAILED DESCRIPTION

[0070] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, these embodiments are not intended to limit the present invention.

[0071] [First embodiment]

[0072] The radiation detector of this embodiment has the function of detecting radiation that has passed through a subject and outputting image information representing a radiation image of the subject. The radiation detector of this embodiment includes a sensor substrate and a conversion layer (refer to FIG. 1 ) that converts radiation into light. Figure 2B The sensor substrate 12 and the conversion layer 14 of the radiation detector 10 are shown in FIG. 1 . The sensor substrate 12 of this embodiment is an example of the substrate of the present invention.

[0073] First, refer to Figure 1An overview of an example of the configuration of an electrical system in the radiation imaging apparatus of this embodiment will be described. Figure 1 This is a block diagram showing an example of the configuration of the main parts of the electrical system in the radiation imaging apparatus according to the present embodiment.

[0074] like Figure 1 As shown, the radiation imaging apparatus 1 of this embodiment includes a radiation detector 10 , a control unit 100 , a drive unit 102 , a signal processing unit 104 , an image memory 106 , and a power supply unit 108 .

[0075] The radiation detector 10 includes a sensor substrate 12 and a conversion layer (see Figure 2B ). The sensor substrate 12 includes a flexible substrate 11 and a plurality of pixels 30 provided on a first surface 11A of the substrate 11. Hereinafter, the plurality of pixels 30 may be simply referred to as "pixels 30." The first surface 11A in this embodiment is an example of a surface of the substrate on which pixels are provided in the present invention. Furthermore, the second surface 11B on the side opposite to the first surface 11A of the substrate 11 in this embodiment is an example of a surface on the side opposite to the side on which pixels are provided in the present invention.

[0076] like Figure 1 As shown, each pixel 30 in this embodiment includes a sensor portion 34 that generates and accumulates charge based on light converted by the conversion layer, and a switching element 32 that reads the charge accumulated by the sensor portion 34. In this embodiment, a thin film transistor (TFT) is used as the switching element 32 as an example. Therefore, the switching element 32 will be referred to as "TFT 32" below. In this embodiment, the sensor portion 34 and the TFT 32 are formed, and a layer forming the pixel 30 is provided as a planarization layer on the first surface 11A of the substrate 11.

[0077] The pixels 30 are arranged on the pixel region 35 of the sensor substrate 12 along one direction (in the same direction as the pixel region 35). Figure 1 The scanning wiring direction corresponding to the horizontal direction, hereinafter also referred to as the "row direction") and the direction crossing the row direction ( Figure 1 The signal wiring direction corresponding to the longitudinal direction, hereinafter also referred to as the "column direction") is arranged in a two-dimensional shape. Figure 1 , the arrangement of the pixels 30 is simplified. For example, 1024×1024 pixels 30 are arranged in the row direction and the column direction.

[0078] Furthermore, the radiation detector 10 is provided with a plurality of scanning wirings 38 for controlling the switching state (on and off) of the TFTs 32 for each row of pixels 30, and a plurality of signal wirings 36 for reading the charge accumulated in the sensor section 34 for each column of pixels 30, so as to intersect with each other. Each of the plurality of scanning wirings 38 is connected to the sensor section 34 via a flexible cable 112A (see FIG. Figure 2B ) is connected to the driving unit 102, whereby a driving signal outputted from the driving unit 102 to control the switching state of the driving TFT 32 flows through each of the plurality of scanning wirings 38. In addition, each of the plurality of signal wirings 36 is connected to the driving unit 102 via a flexible cable 112B (refer to FIG. Figure 2B ) is connected to the signal processing unit 104, thereby outputting the charge read from each pixel 30 as an electrical signal to the signal processing unit 104. The signal processing unit 104 generates and outputs image data corresponding to the input electrical signal. In this embodiment, the term "connected" with respect to the flexible cable 112 means an electrical connection.

[0079] The signal processing unit 104 is connected to the control unit 100, which will be described later. Image data output from the signal processing unit 104 is sequentially output to the control unit 100. An image memory 106 is connected to the control unit 100. Image data sequentially output from the signal processing unit 104 is sequentially stored in the image memory 106 under the control of the control unit 100. The image memory 106 has a storage capacity capable of storing a predetermined number of image data, and each time a radiographic image is captured, the image data obtained by the capture is sequentially stored in the image memory 106.

[0080] The control unit 100 includes a CPU (Central Processing Unit) 100A, a memory 100B including a ROM (Read Only Memory) and a RAM (Random Access Memory), and a nonvolatile storage unit 100C such as a flash memory. An example of the control unit 100 is a microcomputer. The control unit 100 controls the overall operation of the radiographic imaging apparatus 1.

[0081] In the radiation imaging device 1 of the present embodiment, the image memory 106 , the control unit 100 , and the like are formed on the control substrate 110 .

[0082] Furthermore, in order to apply a bias voltage to each pixel 30, a common wiring 39 is provided in the sensor portion 34 of each pixel 30 in the wiring direction of the signal wiring 36. The common wiring 39 is connected to a bias power supply (not shown) external to the sensor substrate 12, thereby applying a bias voltage from the bias power supply to each pixel 30.

[0083] The power supply unit 108 supplies power to various components and circuits such as the control unit 100, the driving unit 102, the signal processing unit 104, the image memory 106, and the power supply unit 108. Figure 1 In order to avoid complication, the wiring connecting the power supply unit 108 and various components and various circuits is omitted from the illustration.

[0084] Furthermore, the radiation detector 10 will be described in detail. Figure 2A This is an example of a plan view of the radiation detector 10 according to the present embodiment as viewed from the first surface 11A side of the substrate 11 . Figure 2B The substrate 11 is viewed from the first surface 11A side. Figure 2A An example of a top view of the radiation detector 10 in a state where the folded flexible cable 112 is unfolded. Figure 3 This is an example of a cross-sectional view of the radiation detector 10 taken along line AA in FIG. 2 .

[0085] The substrate 11 is flexible, and is, for example, a resin sheet containing plastic such as PI (PolyImide). The thickness of the substrate 11 can be such that the desired flexibility is obtained according to the hardness of the material and the size of the sensor substrate 12, that is, according to the area of ​​the first surface 11A or the second surface 11B. As an example of flexibility, it refers to a case where the rectangular substrate 11 is a single body, and when one side of the substrate 11 is fixed, the substrate 11 sags by more than 2 mm (below the height of the fixed side) due to the gravity of the substrate 11 at a distance of 10 cm from the fixed side. As a specific example of the case where the substrate 11 is a resin sheet, the thickness can be 5 μm to 125 μm, and a more preferred thickness is 20 μm to 50 μm.

[0086] In addition, the substrate 11 has characteristics that can withstand the manufacture of the pixel 30. In the present embodiment, it has characteristics that can withstand the manufacture of amorphous silicon TFTs (a-Si TFTs). As a characteristic of such substrate 11, the coefficient of thermal expansion (CTE: Coefficient of Thermal Expansion) at 300°C to 400°C is preferably the same as that of an amorphous silicon (a-Si) wafer (for example, ±5ppm / K). Specifically, the coefficient of thermal expansion of the substrate 11 at 300°C to 400°C is preferably 20ppm / K or less. Furthermore, as the thermal shrinkage rate of the substrate 11, the thermal shrinkage rate at 400°C is preferably 0.5% or less when the thickness is 25μm. Furthermore, the elastic modulus of the substrate 11 preferably does not have a transition point like that of a typical PI in the temperature range between 300°C and 400°C, and the elastic modulus at 500°C is preferably 1GPa or more.

[0087] Furthermore, in order to suppress backscattered radiation generated by the substrate 11 itself, the substrate 11 of this embodiment preferably has a particle layer containing inorganic particles having an average particle size of 0.05 μm to 2.5 μm that absorb backscattered radiation. Furthermore, in the case of a resin substrate 11, such inorganic particles are preferably inorganic substances having an atomic number greater than that of the organic matter constituting the substrate 11 and an atomic number of 30 or less. Specific examples of such particles include SiO2, an oxide of Si with an atomic number of 14; MgO, an oxide of Mg with an atomic number of 12; Al2O3, an oxide of Al with an atomic number of 13; and TiO2, an oxide of Ti with an atomic number of 22. A specific example of a resin sheet having such properties is XENOMAX (registered trademark).

[0088] In addition, the above-mentioned thickness in the present embodiment was measured using a micrometer. The thermal expansion coefficient was measured according to JISK7197:1991. In addition, regarding the measurement, a test piece was cut from the main surface of the substrate 11 by changing the angle every 15 degrees, the thermal expansion coefficient of each test piece cut was measured, and the highest value was set as the thermal expansion coefficient of the substrate 11. The thermal expansion coefficient was measured at intervals of 10°C at -50°C to 450°C in the MD (Machine Direction: longitudinal) direction and the TD (Transverse Direction: transverse) direction, and (ppm / °C) was converted into (ppm / K). Regarding the measurement of the thermal expansion coefficient, a TMA4000S device manufactured by MAC Science was used, and the sample length was set to 10 mm, the sample width was set to 2 mm, and the initial load was set to 34.5 g / mm 2 , the heating rate was set to 5°C / min and the atmosphere was set to argon.

[0089] The substrate 11 having the desired flexibility is not limited to a resin substrate such as a resin sheet. For example, the substrate 11 may be a relatively thin glass substrate. As a specific example of a glass substrate, when the substrate 11 is a glass substrate, a thickness of 0.3 mm or less is generally considered flexible when the substrate has a side of approximately 43 cm. Therefore, any desired glass substrate may be used as long as the thickness is 0.3 mm or less.

[0090] like Figures 2A to 3 As shown, a plurality of pixels 30 are provided on the first surface 11A of the substrate 11. In the present embodiment, the region where the pixels 30 are provided on the first surface 11A of the substrate 11 is referred to as a pixel region 35.

[0091] Furthermore, a conversion layer 14 is provided on the first surface 11A of the substrate 11 via an adhesive layer 70. The conversion layer 14 contains a phosphor and has the function of converting radiation into light. In this embodiment, a scintillator containing CsI (cesium iodide) as a phosphor is used as an example of the conversion layer 14. Preferred scintillators include, for example, CsI:Tl (cesium iodide doped with thallium) or CsI:Na (cesium iodide doped with sodium), each of which has an emission spectrum of 400 nm to 700 nm when irradiated with X-rays. The peak emission wavelength of CsI:Tl in the visible light region is 565 nm.

[0092] The conversion layer 14 of this embodiment is formed directly on the first surface 50A of the fixing plate 50, which is located on the side opposite the substrate 11. For example, as described above, when the conversion layer 14 is a scintillator containing CsI, the conversion layer 14 is formed directly on the fixing plate 50 by vapor deposition using the fixing plate 50 as a substrate. Furthermore, unlike this embodiment, when the conversion layer 14 is a scintillator containing a phosphor such as GOS (Gd2O2S:Tb), the conversion layer 14 is formed directly on the fixing plate 50 by applying a binder such as a resin in which the phosphor is dispersed. Furthermore, when CsI is used for the conversion layer 14, the conversion efficiency of radiation into visible light is higher than when GOS is used.

[0093] The fixing plate 50 is used to fix the support 400 (see FIG. 1 ) in a method of manufacturing the radiation imaging device 1 which will be described in detail later. Figures 5A to 5F etc.) before peeling off the sensor substrate 12. Furthermore, the fixing plate 50 of the present embodiment is a base for supporting the driving substrate 200, the signal processing substrate 300 and the control substrate 110. At least one of the driving substrate 200, the signal processing substrate 300 and the control substrate 110 of the present embodiment is an example of the circuit portion of the present invention. Hereinafter, the driving substrate 200, the signal processing substrate 300 and the control substrate 110 are collectively referred to as the "circuit portion". Specifically, the driving substrate 200, the signal processing substrate 300 and the control substrate 110 connected to the pixel 30 via the flexible cable 112 are respectively fixed to the second surface 50B of the fixing plate 50 (also refer to Figure 4 As a material of the fixing plate 50, for example, a metal containing at least one of Mg, Al, and Li, and carbon are preferable, and a material containing carbon as a main component is more preferable.

[0094] From the perspective of supporting the circuit portion, the fixing plate 50 preferably has high bending rigidity, preferably at least higher than the base material 11. In addition, if the bending modulus decreases, the bending rigidity also decreases. In order to obtain the desired bending rigidity, the thickness of the fixing plate 50 needs to be thickened, resulting in an increase in the overall thickness of the radiation detector 10. If appropriate rigidity can be obtained and considering the overall thickness of the radiation detector 10, the bending elastic modulus of the material used for the fixing plate 50 is preferably greater than 1000 MPa and less than 40000 MPa. In addition, the bending rigidity of the fixing plate 50 is preferably 36000 Pacm 4 Above and 2240000Pacm 4 the following.

[0095] Furthermore, the thickness of the fixing plate 50 can be any thickness sufficient to achieve the desired bending modulus and bending rigidity described above. However, considering the overall thickness of the radiation detector 10, the thickness of the fixing plate 50 is preferably not less than 0.1 mm and not more than 0.25 mm. Furthermore, as an example, the size of the fixing plate 50 in this embodiment, specifically, the area of ​​the first surface 50A of the substrate 11 that faces the first surface 11A, is the same as the area of ​​the first surface 11A of the substrate 11. In this embodiment, "the same" means the same, including a range that can be considered as an error.

[0096] like Figure 3 As shown, the conversion layer 14 of this embodiment is formed with an inclination where its thickness gradually decreases toward its outer edge. Hereinafter, the central region of the conversion layer 14, whose thickness is assumed to be substantially constant when manufacturing and measurement errors are ignored, is referred to as the central portion 14A. Furthermore, the peripheral region of the conversion layer 14, whose thickness is, for example, 90% or less of the average thickness of the central portion 14A, is referred to as the peripheral portion 14B. In other words, the conversion layer 14 has an inclined surface in the peripheral portion 14B that is inclined relative to the fixing plate 50. For ease of explanation, when referring to the upper or lower portion of the conversion layer 14, the side in contact with the fixing plate 50 is referred to as the "lower" portion, and the side facing the sensor substrate 12 is referred to as the "upper" portion. For example, the inclined surface in the peripheral portion 14B of the conversion layer 14 gradually increases in inclination from the upper side of the conversion layer 14 toward the lower side.

[0097] And, as Figure 3 As shown, an adhesive layer 64 and a protective layer 65 are provided on the conversion layer 14 of this embodiment.

[0098] The adhesive layer 64 covers the entire surface of the conversion layer 14. The end of the adhesive layer 64 extends to the first surface 50A of the fixing plate 50. That is, the adhesive layer 64 is bonded to the fixing plate 50 at its end. The adhesive layer 64 has the function of fixing the protective layer 65 to the conversion layer 14. The adhesive layer 64 is preferably light-transmissive. As materials for the adhesive layer 64, for example, acrylic adhesives, hot-melt adhesives, and silicone adhesives can be used. Examples of acrylic adhesives include polyurethane acrylates, acrylic resin acrylates, and epoxy acrylates. Examples of hot-melt adhesives include thermoplastics such as EVA (ethylene / vinyl acetate copolymer), EAA (ethylene and acrylic acid copolymer), EEA (ethylene-ethyl acrylate copolymer), and EMMA (ethylene-methyl methacrylate copolymer). The thickness of the adhesive layer 64 is preferably greater than 2 μm and less than 7 μm. By setting the thickness of the adhesive layer 64 to 2 μm or greater, the protective layer 65 can be effectively secured to the conversion layer 14. Furthermore, by setting the thickness of the adhesive layer 64 to 7 μm or less, a decrease in the MTF (Modulation Transfer Function) and DQE (Detective Quantum Efficiency) can be suppressed.

[0099] The protective layer 65 is provided so as to cover the entire conversion layer 14 and its end portion covers a portion of the first surface 50A of the fixing plate 50. The protective layer 65 functions as a moisture-proof film that prevents moisture from penetrating the conversion layer 14. As a material for the protective layer 65, for example, an organic film containing an organic material such as PET (Polyethylene Terephthalate), PPS (PolyPhenylene Sulfide), OPP (Oriented PolyPropylene), PEN (PolyEthylene Naphtha]ate), or PI, or PARYLENE (registered trademark) can be used. Furthermore, a laminated film of a resin film and a metal film can also be used as the protective layer 65. As an example of a laminated film of a resin film and a metal film, a sheet of ALPET (registered trademark) can be cited.

[0100] And, as Figure 3 As shown, the space between the sensor substrate 12 and the fixing plate 50 is sealed by a sealing member 72. Specifically, the sealing member 72 is provided in the area between the sensor substrate 12 and the fixing plate 50 corresponding to the peripheral edge portion 14B of the conversion layer 14 and the area outside thereof, in the space formed by the conversion layer 14 (protective layer 65), the sensor substrate 12, and the fixing plate 50. Figure 3As shown, the sealing member 72 is not provided on the terminal 113 or the flexible cable 112. The material of the sealing member 72 is not particularly limited; for example, resin can be used. By filling the space formed between the sensor substrate 12 and the fixing plate 50 with the sealing member 72, the flexural rigidity of the radiation detector 10 can be improved. Furthermore, the conversion layer 14 can be prevented from peeling off from the sensor substrate 12.

[0101] And, as Figure 3 As shown, a reinforcing substrate 40 is provided on the second surface 11B side of the base material 11 in the sensor substrate 12 of the radiation detector 10 of the present embodiment via an adhesive 42 .

[0102] The reinforcing substrate 40 has the function of reinforcing the strength of the substrate 11. The reinforcing substrate 40 of this embodiment has a higher flexural rigidity than the substrate 11, and its dimensional change (deformation) in response to a force applied perpendicularly to the surface facing the conversion layer 14 is smaller than its dimensional change in response to a force applied perpendicularly to the second surface 11B of the substrate 11. Examples of materials for the reinforcing substrate 40 include carbon and plastic. Furthermore, the reinforcing substrate 40 may be composed of multiple materials, such as a laminate of plastic and carbon.

[0103] Specifically, the flexural rigidity of the reinforcing substrate 40 is preferably 100 times or more greater than that of the base material 11. Furthermore, in this embodiment, the thickness of the reinforcing substrate 40 is greater than that of the base material 11. For example, when XENOMAX (registered trademark) is used as the base material 11, the thickness of the reinforcing substrate 40 is preferably approximately 0.2 mm to 0.25 mm.

[0104] Specifically, the reinforcing substrate 40 of this embodiment preferably uses a raw material having a bending modulus of 150 MPa or more and 2500 MPa or less. From the perspective of suppressing the deflection of the substrate 11, it is preferred that the bending rigidity of the reinforcing substrate 40 is higher than that of the substrate 11. In addition, if the bending modulus decreases, the bending rigidity also decreases. In order to obtain the desired bending rigidity, the thickness of the reinforcing substrate 40 needs to be increased, resulting in an increase in the overall thickness of the radiation detector 10. Considering the material of the reinforcing substrate 40, when obtaining a bending rigidity exceeding 140,000 Pacm 4 In the case of a bending rigidity of 500 MPa, the thickness of the reinforcing substrate 40 tends to be relatively thick. Therefore, if appropriate rigidity can be obtained and the thickness of the entire radiation detector 10 is taken into consideration, the bending elastic modulus of the material used for the reinforcing substrate 40 is more preferably 150 MPa or more and 2500 MPa or less. In addition, the bending rigidity of the reinforcing substrate 40 is preferably 540 Pacm 4 Above and 140000Pacm 4 the following.

[0105] Furthermore, the thermal expansion coefficient of the reinforcing substrate 40 in this embodiment is preferably close to that of the material of the conversion layer 14. The ratio of the thermal expansion coefficient of the reinforcing substrate 40 to the thermal expansion coefficient of the conversion layer 14 (thermal expansion coefficient of the reinforcing substrate 40 / thermal expansion coefficient of the conversion layer 14) is preferably 0.5 to 2. The thermal expansion coefficient of the reinforcing substrate 40 is preferably 30 ppm / K to 80 ppm / K. For example, when the conversion layer 14 is made of CsI:Tl, the thermal expansion coefficient is 50 ppm / K. In this case, examples of materials relatively close to the conversion layer 14 include PVC (Polyvinyl Chloride) with a thermal expansion coefficient of 60 to 80 ppm / K, acrylic with a thermal expansion coefficient of 70 to 80 ppm / K, PET with a thermal expansion coefficient of 65 to 70 ppm / K, PC (Polycarbonate) with a thermal expansion coefficient of 65 ppm / K, and Teflon (registered trademark) with a thermal expansion coefficient of 45 to 70 ppm / K. Furthermore, considering the aforementioned flexural modulus, a material comprising at least one of PET and PC is more preferably used as the material for the reinforcing substrate 40.

[0106] From the viewpoint of elasticity, the reinforcing substrate 40 preferably comprises a material having a yield point. In addition, in the present embodiment, the "yield point" refers to the phenomenon that stress temporarily drops sharply when the material is stretched, and refers to the point where stress does not increase but strain increases on the curve representing the relationship between stress and strain, and refers to the top of the stress-strain curve when the material is subjected to a tensile strength test. As resins having a yield point, hard and viscous resins and soft, viscous and medium-strength resins can generally be cited. As hard and viscous resins, for example, PC can be cited. And, as soft, viscous and medium-strength resins, for example, polypropylene can be cited.

[0107] When the reinforcing substrate 40 of this embodiment is made of plastic, for the reasons mentioned above, a thermoplastic resin is preferably used. Examples thereof include at least one of PC, PET, styrene, acrylic acid, polyacetate, nylon, polypropylene, ABS (Acrylonitrile Butadiene Styrene), engineering plastics, and polyphenylene ether. Among these, the reinforcing substrate 40 is preferably at least one of polypropylene, ABS, engineering plastics, PET, and polyphenylene ether, more preferably at least one of styrene, acrylic acid, polyacetate, and nylon, and even more preferably at least one of PC and PET.

[0108] On the other hand, Figure 2B As shown, a plurality of ( Figure 2B 16 in the figure) terminals 113. As the terminals 113, an anisotropic conductive film or the like is used. Figure 2B and Figure 3 As shown, the flexible cable 112 is electrically connected to each of the plurality of terminals 113. Specifically, as shown in FIG. Figure 2B As shown, the flexible cable 112A is connected to a plurality of (in Figure 2B Each of the terminals 113 (eight in total) is thermally compressed. Flexible cable 112A is a so-called COF (Chip on Film) and carries a driver IC (Integrated Circuit) 210. Driver IC 210 is connected to multiple signal lines included in flexible cable 112A. In this embodiment, flexible cable 112A and flexible cable 112B, described later, are collectively referred to as "flexible cable 112" without distinction.

[0109] The other end of the flexible cable 112A, opposite to the end electrically connected to the terminal 113 of the sensor substrate 12, is electrically connected to the drive substrate 200. As an example, in this embodiment, a plurality of signal lines (not shown) included in the cable 112A are thermally compressed and bonded to the drive substrate 200, thereby electrically connecting to the circuits and components (not shown) mounted on the drive substrate 200. The method of electrically connecting the drive substrate 200 and the flexible cable 112A is not limited to this embodiment; for example, an electrical connection may be provided via a connector. Examples of such connectors include ZIF (Zero Insertion Force) connectors and non-ZIF (non-zero insertion force) connectors.

[0110] The driving substrate 200 of this embodiment is a flexible PCB (Printed Circuit Board) substrate, which is a so-called flexible substrate. In addition, the circuit components (not shown) mounted on the driving substrate 200 are components mainly used to process digital signals (hereinafter referred to as "digital components"). Digital components tend to be relatively smaller in area (size) than the analog components described later. Specific examples of digital components include digital buffers, bypass capacitors, pull-up / pull-down resistors, damping resistors, and EMC (Electro Magnetic Compatibility) countermeasure chip components and power supply ICs. In addition, the driving substrate 200 does not necessarily need to be a flexible substrate, and can be a non-flexible rigid substrate or a rigid flexible substrate.

[0111] like Figure 2A and Figure 3 As shown, the drive substrate 200 is fixed to the fixing plate 50. As an example, in this embodiment, the drive substrate 200 is fixed to the fixing plate 50 by screwing the drive substrate 200 to the second surface 50B of the fixing plate 50. The method of fixing the drive substrate 200 to the fixing plate 50 is not limited to this embodiment. For example, the drive substrate 200 may be fixed to the fixing plate 50 using an adhesive.

[0112] In this embodiment, the driver 102 is implemented by the driver substrate 200 and the driver IC 210 mounted on the flexible cable 112A. The driver IC 210 includes various circuits and elements that implement the driver 102 , which are different from the digital components mounted on the driver substrate 200 .

[0113] On the other hand, the flexible cable 112B is connected to a plurality of Figure 2B Each of the eight (eight in total) terminals 113 is electrically connected to the flexible cable 112A. These terminals 113 are provided on a side intersecting a side of the substrate 11 to which the flexible cable 112A is electrically connected. Like flexible cable 112A, flexible cable 112B is a so-called COF (Chip on Film) and carries a signal processing IC 310. Signal processing IC 310 is connected to multiple signal lines (not shown) included in flexible cable 112B.

[0114] The other end of the flexible cable 112B, opposite to the end electrically connected to the terminal 113 of the sensor substrate 12, is electrically connected to the signal processing substrate 300. As an example, in this embodiment, the multiple signal lines included in the flexible cable 112B are thermally compressed and bonded to the signal processing substrate 300, thereby connecting to the circuits and components (not shown) mounted on the signal processing substrate 300. Furthermore, the method of electrically connecting the signal processing substrate 300 and the flexible cable 112B is not limited to this embodiment; for example, they may be electrically connected via a connector. Examples of such connectors include ZIF (Zero Insertion Force) connectors and Non-ZIF (Non-Zero Insertion Force) connectors. Furthermore, the method of electrically connecting the flexible cable 112A and the drive substrate 200 and the method of electrically connecting the flexible cable 112B and the signal processing substrate 300 may be the same or different. For example, the flexible cable 112A and the drive substrate 200 may be electrically compressed, and the flexible cable 112B and the signal processing substrate 300 may be electrically connected via a connector.

[0115] Similar to the above-mentioned drive substrate 200, the signal processing substrate 300 of this embodiment is a flexible PCB substrate, a so-called flexible substrate. The circuit components (not shown) mounted on the signal processing substrate 300 are components mainly used to process analog signals (hereinafter referred to as "analog components"). Specific examples of analog components include charge amplifiers, analog-to-digital converters (ADCs), digital-to-analog converters (DACs), and power supply ICs. In addition, the circuit components of this embodiment also include coils around the power supply, which are relatively large in component size, and large-capacity capacitors for smoothing. In addition, the signal processing substrate 300 does not necessarily have to be a flexible substrate, and can be a non-flexible rigid substrate or a rigid flexible substrate.

[0116] like Figure 2A and Figure 3 As shown, the signal processing substrate 300 is fixed to the fixing plate 50. As an example, in this embodiment, the signal processing substrate 300 is fixed to the fixing plate 50 by screwing the signal processing substrate 300 to the second surface 50B of the fixing plate 50. The method of fixing the signal processing substrate 300 to the fixing plate 50 is not limited to this embodiment. For example, the signal processing substrate 300 may be fixed to the fixing plate 50 using an adhesive.

[0117] In this embodiment, signal processing unit 104 is implemented by signal processing board 300 and signal processing IC 310 mounted on flexible cable 112B. Signal processing IC 310 includes various circuits and elements implementing signal processing unit 104 that are different from the analog components mounted on signal processing board 300.

[0118] In addition, Figure 2A and Figure 2B In the embodiment, a method of providing a plurality of (two) drive substrates 200 and a signal processing substrate 300 is described, but the number of the drive substrates 200 and the signal processing substrate 300 is not limited to Figure 2A and Figure 2B For example, at least one of the drive substrate 200 and the signal processing substrate 300 may be used as one substrate.

[0119] On the other hand, Figure 3 As shown, in the radiation detector 10 of this embodiment, the flexible cable 112 and the terminal 113 are thermally compressed, thereby electrically connecting the flexible cable 112 and the terminal 113. Figure 3 FIG. 1 is a diagram showing an example of a structure related to the electrical connection between the flexible cable 112B and the radiation detector 10. However, the structure related to the electrical connection between the flexible cable 112A and the radiation detector 10 of this embodiment is also similar to that shown in FIG. Figure 3 The same way.

[0120] Furthermore, the radiation imaging device 1 will be described in detail. Figure 4 This is an example of a cross-sectional view of the radiation imaging device 1 of this embodiment. The radiation imaging device 1 of this embodiment is an ISS (Irradiation Side Sampling) type radiation imaging device that irradiates radiation from the second surface 11B side of the substrate 11 .

[0121] like Figure 4 As shown in FIG. 1 , the radiation imaging device 1 formed by using the radiation detector 10 is used in a state of being housed in a housing 120. Figure 4 As shown, in the housing 120, the radiation detector 10, the signal processing substrate 300, the drive substrate 200 (in Figure 4 The power supply unit 108 and the control substrate 110 (omitted in the figure) Figure 4 (not shown) are arranged in the incident direction of radiation. The radiation detector 10 is arranged such that the second surface 11B of the substrate 11 faces the top plate of the housing 120 on the irradiation surface 120A side, which is irradiated by radiation that has passed through the subject. More specifically, the radiation detector 10 is arranged such that the reinforcing substrate 40, which is provided on the second surface 11B of the substrate 11 in the sensor substrate 12, faces the top plate of the housing 120 on the irradiation surface 120A side.

[0122] As described above, the signal processing board 300 electrically connected via the sensor board 12 and the flexible cable 112B is fixed to the second surface 50B of the fixing plate 50. Figure 4 Although not described in the figure, the drive substrate 200 electrically connected via the sensor substrate 12 and the flexible cable 112B is also fixed to the second surface 50B of the fixing plate 50. In addition, the control substrate 110 electrically connected to the drive substrate 200 and the signal processing substrate 300 is also fixed to the second surface 50B of the fixing plate 50.

[0123] The signal processing substrate 300 , the driving substrate 200 , and the control substrate 110 are connected to the power supply unit 108 via power lines 114 , respectively.

[0124] The frame 120 is preferably made of a lightweight material with low absorption of radiation (especially X-rays) and high rigidity, and more preferably a material with a sufficiently high elastic modulus. A material having a flexural modulus of 10,000 MPa or greater is preferably used as the material for the frame 120. Carbon or CFRP (Carbon Fiber Reinforced Plastics) having a flexural modulus of approximately 20,000 to 60,000 MPa can be suitably used as the material for the frame 120.

[0125] During the capture of radiographic images by the radiographic imaging apparatus 1, load from the subject is applied to the irradiation surface 120A of the housing 120. If the housing 120 lacks sufficient rigidity, the load from the subject may cause deflection in the sensor substrate 12, leading to failures such as damage to the pixels 30. By housing the radiation detector 10 within the housing 120, which is constructed from a material having a flexural modulus of elasticity of 10,000 MPa or greater, deflection of the sensor substrate 12 caused by the load from the subject can be suppressed.

[0126] Furthermore, in the housing 120, the irradiation surface 120A and other portions of the housing 120 may be formed of different materials. For example, the portion corresponding to the irradiation surface 120A may be formed of a material having a low radiation absorptivity, high rigidity, and a sufficiently high elastic modulus as described above, while the other portions may be formed of a material different from the portion corresponding to the irradiation surface 120A (for example, a material having a lower elastic modulus than the portion of the irradiation surface 120A).

[0127] Regarding the method for manufacturing the radiation imaging device 1 of this embodiment, refer to Figures 5A to 5H Provide explanation.

[0128] like Figure 5A As shown, to form the sensor substrate 12, the substrate 11 is formed on a support 400, such as a glass substrate, which is thicker than the substrate 11, with a release layer 402 interposed therebetween. For example, when forming the substrate 11 by lamination, a sheet to be the substrate 11 is bonded to the support 400. The second surface 11B of the substrate 11 is in contact with the release layer 402. The method for forming the substrate 11 is not limited to this embodiment; for example, the substrate 11 may be formed by a coating method.

[0129] Pixels 30 are formed in pixel region 35 of first surface 11A of substrate 11. In this embodiment, as an example, pixels 30 are formed on first surface 11A of substrate 11 via a primer layer (not shown) made of SiN or the like.

[0130] And, as Figure 5B As shown, conversion layer 14 is formed on first surface 50A of fixing plate 50. In this embodiment, conversion layer 14 of CsI, which is columnar crystals, is directly formed on first surface 50A of fixing plate 50 using a vapor deposition method such as vacuum evaporation, sputtering, or CVD (Chemical Vapor Deposition). In this case, the side of conversion layer 14 of fixing plate 50 that contacts first surface 50A becomes the base point side of the columnar crystal growth direction.

[0131] Furthermore, unlike the radiation detector 10 of this embodiment, GOS (Gd2O2S:Tb) or the like may be used instead of CsI as the conversion layer 14. In this case, for example, the conversion layer 14 is formed by applying a resin containing a dispersion of GOS to the fixing plate 50. Furthermore, a protective layer 65 is provided on the conversion layer 14 formed on the fixing plate 50 via an adhesive layer 64.

[0132] In addition, regardless of the use of the above Figure 5A The process of forming the sensor substrate 12 and the use of Figure 5B Regardless of the order of the steps for forming the conversion layer 14 described above, either step may be performed first, or both steps may be performed simultaneously.

[0133] Then, if Figure 5C As shown, the conversion layer 14 is provided on the first surface 11A of the substrate 11. In this embodiment, as described above, the conversion layer 14 is provided on the first surface 11A of the substrate 11 via the adhesive layer 70, with the upper side of the conversion layer 14 (more specifically, the side of the conversion layer 14 opposite to the side in contact with the fixing plate 50) facing the first surface 11A of the substrate 11.

[0134] Furthermore, the sealing member 72 is used to seal the space between the fixing plate 50 and the sensor substrate 12. The method for sealing the space between the fixing plate 50 and the sensor substrate 12 with the sealing member 72 is not particularly limited. For example, after the conversion layer 14 is provided on the sensor substrate 12, the fluid sealing member 72 may be injected into the space formed between the sensor substrate 12 and the conversion layer 14 (protective layer 65) to cure the sealing member 72.

[0135] And, as Figure 5D As shown, one end of the flexible cable 112 is electrically connected to the sensor substrate 12. Specifically, first, a terminal 113 is formed on the first surface 11A of the substrate 11. Furthermore, the flexible cable 112, which carries the driver IC 210 or the signal processing IC 310, is thermally compressed to electrically connect the terminal 113 to the flexible cable 112. This electrically connects the flexible cable 112 to the sensor substrate 12.

[0136] In addition, regardless of the use of the above Figure 5C The process of sealing with the sealing member 72 and the use of Figure 5D The order of the steps for connecting the flexible cable 112 to the sensor substrate 12 described above may be determined in any order. Specifically, the sensor substrate 12 and the fixing plate 50 may be sealed with the sealing member 72 after the flexible cable 112 and the sensor substrate 12 are electrically connected.

[0137] Then, if Figure 5EAs shown, the other end of the flexible cable 112 is fixed to the second surface 50B of the fixing plate 50. Specifically, the other end of the flexible cable 112A is electrically connected to the drive substrate 200. Furthermore, the other end of the flexible cable 112B is electrically connected to the signal processing board 300. Furthermore, the flexible cable 112 connected to the sensor substrate 12 is folded back toward the second surface 50B of the fixing plate 50, and the drive substrate 200 and the signal processing board 300 are each fixed to the second surface 50B of the fixing plate 50 using screws. By fixing the drive substrate 200 and the signal processing board 300 to the second surface 50B of the fixing plate 50, the other end of the flexible cable 112 is fixed to the second surface 50B of the fixing plate 50.

[0138] Afterwards, if Figure 5F As shown, the radiation detector 10 is peeled off from the support 400 while the other end of the flexible cable 112 is fixed to the second surface 50B of the fixing plate 50. In the case of mechanical peeling, Figure 5F In the example shown, the edge of the base material 11 of the sensor substrate 12 opposite to the edge connected to the flexible cable 112 is used as the starting point for peeling, and the sensor substrate 12 is gradually peeled off from the support 400 along the edge connected to the flexible cable 112 from the starting edge. Figure 5F By peeling it off in the direction of arrow D shown in the figure, mechanical peeling is performed, and the radiation detector 10 in the state where the flexible cable 112 and the sensor substrate 12 are connected can be obtained.

[0139] In addition, the side serving as the starting point of peeling is preferably the side that intersects with the longest side when looking down at the sensor substrate 12. In other words, the side along the bending direction Y that bends due to peeling is preferably the longest side. As an example, in this embodiment, Figure 5F As shown, the side facing the side to which the flexible cable 112B is electrically connected is used as the starting point of the peeling.

[0140] Then, if Figure 5G As shown, the radiation detector 10 of this embodiment is manufactured by bonding the reinforcing substrate 40 provided with the adhesive 42 to the second surface 11B of the base material 11 .

[0141] In addition, if Figure 5H As shown, the radiation detector 10 is housed in the housing 120 in a state where the base material 11 (reinforcement substrate 40) faces the irradiation surface 120A. In this manner, the radiation imaging device 1 of the present embodiment is manufactured.

[0142] Thus, the manufacturing method of the radiation imaging device 1 according to this embodiment includes the steps of disposing the flexible substrate 11 on the support 400 and forming the sensor substrate 12 in the pixel region 35 of the substrate 11. The sensor substrate 12 includes a plurality of pixels 30 that store charge generated by light converted from radiation. Furthermore, the manufacturing method includes the steps of forming the conversion layer 14 that converts radiation into light on the fixing plate 50; and disposing the conversion layer 14 on the first surface 11A of the substrate 11, where the pixels 30 are disposed, so that the conversion layer 14 faces the surface opposite to the fixing plate 50. Furthermore, the manufacturing method includes the steps of securing one end of a flexible cable 112 connected to a circuit unit including at least one of the drive substrate 200 and the signal processing substrate 300, to the sensor substrate 12; securing the flexible cable 112 to the fixing plate 50; and removing the sensor substrate 12, with the conversion layer 14 and fixing plate 50 disposed thereon, from the support 400.

[0143] During the manufacturing process of the radiographic imaging device 1, when the sensor substrate 12 is peeled from the support 400, the base material 11 is susceptible to bending, causing the sensor substrate 12 to bend. This bending of the sensor substrate 12 may cause the flexible cable 112 to stretch. For example, the flexible cable 112 carries the driver IC 210 or the signal processing IC 310, so the weight of these ICs may cause the flexible cable 112 to stretch. Furthermore, when the other end of the flexible cable 112 is connected to a circuit component such as the driver substrate 200 or the signal processing substrate 300, the weight of these circuit components may also cause the flexible cable 112 to stretch. When the flexible cable 112 is stretched, the position of the flexible cable 112 connected to the sensor substrate 12 may shift. If the position of the flexible cable 112 shifts relative to the sensor substrate 12, the connection between the flexible cable 112 and the terminal 113 may malfunction. Furthermore, the stretching of the flexible cable 112 may cause the end of the sensor substrate 12 near the terminal 113 to bend. Therefore, the flexible cable 112 may be reworked or the radiographic imaging apparatus 1 may be remanufactured.

[0144] In contrast, as described above, in the manufacturing method of the radiation imaging device 1 of this embodiment, the flexible cable 112 is fixed to the fixing plate 50 before the sensor substrate 12 is peeled from the support body 400. Then, with the flexible cable 112 fixed to the fixing plate 50, the sensor substrate 12 is peeled from the support body 400. Since the flexible cable 112 is fixed to the fixing plate 50, it is possible to suppress the flexible cable 112 from being stretched when the support body 400 is peeled from the sensor substrate 12. Therefore, according to the manufacturing method of the radiation imaging device 1 of this embodiment, it is possible to suppress malfunctions caused by the flexible cable 112 connected to the sensor substrate 12 in the event that the sensor substrate 12 bends during the manufacture of the radiation imaging device 1.

[0145] Furthermore, according to the radiation imaging device 1 of this embodiment, the fixing plate 50 can improve flexural rigidity and achieve the desired flexural rigidity, thereby improving impact resistance. Furthermore, according to the radiation imaging device 1, compared to a case where the fixing plate for fixing the circuit unit is provided separately from the fixing plate 50, the device can be made lighter and thinner. Thus, according to the radiation imaging device 1 of this embodiment, flexural rigidity can be improved and weight can be reduced.

[0146] [Second embodiment]

[0147] The second embodiment will now be described. Detailed description of the same configurations of the radiation imaging apparatus 1 and the radiation detector 10 of this embodiment as those of the first embodiment will be omitted.

[0148] Figure 6 FIG. 1 is an example of a cross-sectional view taken along line AA of the radiation detector 10 in the radiation imaging device 1 of the present embodiment. In the radiation detector 10 of the present embodiment, a conversion layer 14 is formed on the base material 11 of the sensor substrate 12. Figure 6 As shown, the area of ​​the lower side (sensor substrate 12 side) of the conversion layer 14 in this embodiment is larger than the area of ​​the upper side (fixing plate 50 side). In other words, the inclined surface in the peripheral portion 14B of the conversion layer 14 is inclined so as to gradually widen from the lower side toward the upper side of the conversion layer 14.

[0149] like Figure 6 As shown, in the radiation detector 10 of this embodiment, an adhesive layer 60 and a reflective layer 62 are provided between the conversion layer 14 and the adhesive layer 64 and the protective layer 65 described in the first embodiment.

[0150] The adhesive layer 60 covers the entire surface of the conversion layer 14, including the central portion 14A and the peripheral portion 14B. The adhesive layer 60 secures the reflective layer 62 to the conversion layer 14. The adhesive layer 60 is preferably light-transmissive. The adhesive layer 60 can be made of the same material as the bonding layer 64, but the bonding strength of the adhesive layer 60 may be less than that of the bonding layer 64. Examples of materials for the adhesive layer 60 include acrylic adhesives, hot-melt adhesives, and silicone adhesives. Examples of acrylic adhesives include polyurethane acrylates, acrylic resin acrylates, and epoxy acrylates. Examples of hot-melt adhesives include thermoplastics such as EVA (ethylene / vinyl acetate copolymer), EAA (ethylene and acrylic acid copolymer), EEA (ethylene-ethyl acrylate copolymer), and EMMA (ethylene-methyl methacrylate copolymer). The thickness of the adhesive layer 60 is preferably 2 μm to 7 μm. By setting the thickness of the adhesive layer 60 to 2 μm or greater, the reflective layer 62 can be effectively secured to the conversion layer 14. Furthermore, the risk of an air layer forming between the conversion layer 14 and the reflective layer 62 can be minimized. If an air layer forms between the conversion layer 14 and the reflective layer 62, multiple reflections may occur, where light emitted from the conversion layer 14 is repeatedly reflected between the air layer and the conversion layer 14, and between the air layer and the reflective layer 62. Furthermore, by setting the thickness of the adhesive layer 60 to 7 μm or less, a decrease in MTF and DQE can be minimized.

[0151] Reflective layer 62 covers the entire surface of adhesive layer 60. Reflective layer 62 reflects light converted by conversion layer 14. Reflective layer 62 is preferably made of an organic material. Examples of materials for reflective layer 62 include white PET, TiO2, Al2O3, foamed white PET, polyester-based highly reflective sheets, and specularly reflective aluminum. The thickness of reflective layer 62 is preferably between 10 μm and 40 μm.

[0152] The adhesive layer 64 of this embodiment covers the entire surface of the reflective layer 62. The ends of the adhesive layer 64 extend to the surface of the sensor substrate 12. In other words, the adhesive layer 64 is bonded to the sensor substrate 12 at its ends. The adhesive layer 64 secures the reflective layer 62 and protective layer 65 to the conversion layer 14. Furthermore, the adhesive strength of the adhesive layer 64 is preferably greater than that of the adhesive layer 60.

[0153] The protective layer 65 of this embodiment covers the entire surface of the adhesive layer 64. That is, the protective layer 65 is provided in a state of covering the entire conversion layer 14 and its end portion covering a portion of the sensor substrate 12. Figure 6 As shown, the fixing plate 50 of this embodiment is disposed on the conversion layer 14 via the adhesive layer 71 .

[0154] Figure 7 1 is an example of a cross-sectional view of the radiation imaging device 1 of the present embodiment. The radiation imaging device 1 of the present embodiment is also an ISS-type radiation imaging device that irradiates radiation from the second surface 11B side of the substrate 11 .

[0155] like Figure 7 As shown in FIG. 1 , the radiation imaging device 1 formed by using the radiation detector 10 of this embodiment is used in a state of being housed in the housing 120. Figure 7 As shown, in the housing 120, the radiation detector 10, the signal processing substrate 300, the drive substrate 200 (in Figure 7 The power supply unit 108 and the control substrate 110 (omitted in the figure) Figure 7 The radiation detector 10 is arranged in a row along the incident direction of the radiation. The second surface 11B side of the base 11 faces the top plate of the irradiation surface 120A side of the housing 120 irradiated with radiation that has passed through the subject.

[0156] As described above, the signal processing board 300 electrically connected via the sensor board 12 and the flexible cable 112B is fixed to the second surface 50B of the fixing plate 50. Figure 7 Although not described in the figure, the drive substrate 200 electrically connected via the sensor substrate 12 and the flexible cable 112B is also fixed to the second surface 50B of the fixing plate 50. In addition, the control substrate 110 electrically connected to the drive substrate 200 and the signal processing substrate 300 is also fixed to the second surface 50B of the fixing plate 50.

[0157] Regarding the method for manufacturing the radiation imaging device 1 of this embodiment, refer to Figures 8A to 8H Provide explanation.

[0158] like Figure 8A As shown, the reference Figure 5A Similarly to the contents described above, to form the sensor substrate 12 , the base material 11 is formed on a support 400 such as a glass substrate having a thickness thicker than that of the base material 11 via a release layer 402 .

[0159] And, as Figure 8B As shown, the conversion layer 14 is formed on the pixel region 35 of the sensor substrate 12. In this embodiment, the conversion layer 14, made of CsI columnar crystals, is directly formed on the area of ​​the first surface 11A of the substrate 11 that covers the pixel region 35 by a vapor deposition method such as vacuum evaporation, sputtering, or CVD (Chemical Vapor Deposition). In this case, the side of the conversion layer 14 that contacts the pixel 30 serves as the base point of the columnar crystal growth direction.

[0160] Furthermore, a reflective layer 62 is provided on the conversion layer 14 formed on the sensor substrate 12 via an adhesive layer 60. Furthermore, a protective layer 65 is provided on the reflective layer 62 via an adhesive layer 64.

[0161] Furthermore, unlike the radiation detector 10 of this embodiment, when GOS (Gd 2 O 2 S:Tb) or the like is used instead of CsI as the conversion layer 14 , the conversion layer 14 is formed by, for example, applying a resin in which GOS is dispersed on the first surface 11A of the substrate 11 .

[0162] Furthermore, after forming a buffer layer (not shown) in the area of ​​the first surface 11A of the substrate 11, including the area where the conversion layer 14 is to be formed, which functions to buffer the difference in thermal expansion coefficient between the conversion layer 14 and the substrate 11, the conversion layer 14 is preferably formed on the buffer layer. The greater the difference in thermal expansion coefficient between the conversion layer 14 and the substrate 11, the more preferably a buffer layer is provided. For example, when XENOMAX (registered trademark) is used for the substrate 11, the difference in thermal expansion coefficient between the conversion layer 14 and the substrate 11 becomes greater than that of other materials, so it is preferable to provide a buffer layer. PI film or PARYLENE (registered trademark) film is used as this buffer layer.

[0163] Then, if Figure 8C As shown, a fixing plate 50 is provided on the surface of the conversion layer 14 opposite to the surface on the sensor substrate 12 side. Specifically, a sealing member 72 is used to seal the periphery of the conversion layer 14. Furthermore, the fixing plate 50 is provided on the sealing member 72 and the conversion layer 14 via an adhesive layer 71. Alternatively, after the fixing plate 50 with the adhesive layer 71 is attached to the conversion layer 14, the sealing member 72 can be filled into the space enclosed by the fixing plate 50 (adhesive layer 71), the first surface 11A of the substrate 11, and the conversion layer 14 to achieve sealing.

[0164] And, as Figure 8D As shown, the reference Figure 5D The same as described above, one end of the flexible cable 112 is electrically connected to the sensor substrate 12. Figure 8C The process of setting the fixing plate 50 and using Figure 8D The order of the steps for connecting the flexible cable 112 to the sensor substrate 12 described above may be determined in any order. Specifically, the fixing plate 50 may be provided on the conversion layer 14 after the flexible cable 112 and the sensor substrate 12 are electrically connected.

[0165] Then, if Figure 8E As shown, the reference Figure 5ESimilarly to the description, the other end of the flexible cable 112 is fixed to the second surface 50B of the fixing plate 50. Figure 8F As shown, the reference Figure 5F Similarly to the above description, the radiation detector 10 is peeled from the support 400 with the other end of the flexible cable 112 fixed to the second surface 50B of the fixing plate 50. Thus, the radiation detector 10 with the flexible cable 112 connected to the sensor substrate 12 is obtained.

[0166] Then, if Figure 8G As shown, the reference Figure 5G The radiation detector 10 of this embodiment is manufactured by bonding the reinforcing substrate 40 provided with the adhesive 42 to the second surface 11B of the base material 11 in the same manner as described above.

[0167] In addition, if Figure 8H As shown, the radiation detector 10 is housed in the housing 120 in a state where the base material 11 (reinforcement substrate 40) faces the irradiation surface 120A. In this manner, the radiation imaging device 1 of the present embodiment is manufactured.

[0168] Thus, the manufacturing method of the radiation imaging device 1 according to this embodiment includes the steps of disposing the flexible substrate 11 on a support 400 and forming a sensor substrate 12 in the pixel region 35 of the substrate 11. The sensor substrate 12 includes a plurality of pixels 30 that store charge generated by light converted from radiation. Furthermore, the manufacturing method includes the steps of disposing the conversion layer 14 that converts radiation into light on the first surface 11A of the substrate 11 where the pixels 30 are disposed; and connecting one end of a flexible cable 112 connected to a circuit unit including at least one of the drive substrate 200 and the signal processing substrate 300 to the sensor substrate 12. Furthermore, the manufacturing method includes the steps of disposing a fixing plate 50 on the surface of the conversion layer 14 opposite to the sensor substrate 12; fixing the flexible cable 112 to the fixing plate 50; and removing the sensor substrate 12, on which the conversion layer 14 and fixing plate 50 are disposed, from the support 400.

[0169] In the manufacturing method of the radiation imaging device 1 of this embodiment, similar to the manufacturing method of the radiation imaging device 1 of the first embodiment, the flexible cable 112 is fixed to the fixing plate 50 before the sensor substrate 12 is peeled from the support body 400. Then, with the flexible cable 112 fixed to the fixing plate 50, the sensor substrate 12 is peeled from the support body 400. Therefore, according to the manufacturing method of the radiation imaging device 1 of this embodiment, if the sensor substrate 12 bends during the manufacturing of the radiation imaging device 1, it is possible to suppress the occurrence of failures caused by the flexible cable 112 connected to the sensor substrate 12.

[0170] [Third embodiment]

[0171] The third embodiment will now be described. Detailed description of the same configurations of the radiation imaging apparatus 1 and the radiation detector 10 of this embodiment as those of the first embodiment will be omitted.

[0172] In the first and second embodiments, a method for manufacturing an ISS-type radiation imaging device 1 was described. In contrast, in this embodiment, a method for manufacturing a PSS (Penetration Side Sampling)-type radiation imaging device 1 in which radiation is irradiated from the conversion layer 14 side is described.

[0173] Figure 9 FIG. 1 is an example of a cross-sectional view taken along line AA of the radiation detector 10 in the radiation imaging device 1 according to the present embodiment. Figure 9 As shown, the radiation detector 10 of this embodiment is different from the radiation detector 10 of the second embodiment (refer to Figure 6 ) is that the circuit parts such as the signal processing substrate 300 are not fixed to the fixing plate 50.

[0174] Thus, the fixing plate 50 of this embodiment fixes the flexible cable 112 during the manufacturing process of the radiation imaging device 1, but does not fix circuit components such as the signal processing board 300. Therefore, the fixing plate 50 of this embodiment may differ from the fixing plate 50 of the radiation detector 10 of the second embodiment in terms of size and material.

[0175] As an example, in the radiation detector 10 of this embodiment, a reinforcing substrate that enhances the flexural rigidity of the sensor substrate 12 is used as the fixing plate 50. The fixing plate 50, functioning as a reinforcing substrate, preferably has a flexural modulus and flexural rigidity, similar to the aforementioned reinforcing substrate 40. Therefore, the fixing plate 50 can be made of the same material as the reinforcing substrate 40.

[0176] Figure 10 1 is an example of a cross-sectional view of the radiation imaging device 1 of the present embodiment. As described above, the radiation imaging device 1 of the present embodiment is a PSS-type radiation imaging device that irradiates radiation from the conversion layer 14 side.

[0177] like Figure 10 As shown in FIG. 1 , the radiation imaging device 1 formed by using the radiation detector 10 of this embodiment is used in a state of being housed in the housing 120. Figure 10 As shown, in the housing 120, the radiation detector 10, the signal processing substrate 300, the drive substrate 200 (in Figure 10 The power supply unit 108 and the control substrate 110 (omitted in the figure) Figure 10 The radiation detector 10 is arranged in a row along the incident direction of the radiation. The second surface 50B side of the fixing plate 50 faces the top plate of the irradiation surface 120A side of the housing 120 irradiated by the radiation that has passed through the subject.

[0178] like Figure 10 As shown, the signal processing substrate 300 electrically connected via the sensor substrate 12 and the flexible cable 112B is fixed to the fixing plate 52. Figure 10 Although the description is omitted, the drive substrate 200 electrically connected via the sensor substrate 12 and the flexible cable 112B is also fixed to the fixing plate 52. Figure 10 Although description is omitted, the control substrate 110 electrically connected to the drive substrate 200 and the signal processing substrate 300 is also fixed to the fixing plate 52 .

[0179] Regarding the method for manufacturing the radiation imaging device 1 of this embodiment, refer to Figures 11A to 11D Provide explanation.

[0180] In the manufacturing method of the radiation imaging device 1 of this embodiment, the steps from forming the sensor substrate 12 on the support 400 to electrically connecting one end of the flexible cable 112 to the sensor substrate 12 are the same as those of the second embodiment. Figures 8A to 8D The steps are the same, so the description is omitted.

[0181] In the manufacturing method of the radiation imaging device 1 of this embodiment, thereafter, as Figure 11A As shown, the other end of the flexible cable 112 is fixed to the second surface 50B of the fixing plate 50. The flexible cable 112 fixed to the fixing plate 50 in this process will be removed from the fixing plate 50 later. Therefore, the fixing of the flexible cable 112 to the fixing plate 50 can be said to be temporary. Therefore, the method of fixing the flexible cable 112 to the fixing plate 50 will be described in the next process (refer to FIG. Figure 11B), it is preferred that the method of fixing the flexible cable 112 is not easy to fall off and can be easily removed from the fixing plate 50 at a desired time.

[0182] Afterwards, if Figure 11B As shown, the reference Figure 5F Similarly to the above description, the radiation detector 10 is peeled from the support 400 with the other end of the flexible cable 112 fixed to the second surface 50B of the fixing plate 50. Thus, the radiation detector 10 with the flexible cable 112 connected to the sensor substrate 12 is obtained.

[0183] Then, if Figure 11C As shown, the reference Figure 5G The reinforcing substrate 40 provided with the adhesive 42 is bonded to the second surface 11B of the base material 11 in the same manner as described above.

[0184] Then, the radiation detector 10 of the present embodiment is manufactured by removing the other end of the flexible cable 112 fixed to the second surface 50B of the fixing plate 50 from the fixing plate 50 .

[0185] In addition, if Figure 11D As shown in FIG. 5 , the circuit portion such as the signal processing substrate 300 is fixed to the fixing plate 52. Figure 11D As shown, the radiation detector 10 is housed in the housing 120 in a state where the second surface 50B of the fixing plate 50 faces the irradiation surface 120A. In this manner, the radiation imaging device 1 of the present embodiment is manufactured.

[0186] Thus, in the manufacturing method of the radiation imaging device 1 of this embodiment, similarly to the manufacturing methods of the radiation imaging device 1 of the first and second embodiments, the flexible cable 112 is fixed to the fixing plate 50 before the sensor substrate 12 is peeled from the support body 400. Then, with the flexible cable 112 fixed to the fixing plate 50, the sensor substrate 12 is peeled from the support body 400. Therefore, according to the manufacturing method of the radiation imaging device 1 of this embodiment, if the sensor substrate 12 bends during the manufacture of the radiation imaging device 1, it is possible to suppress malfunctions caused by the flexible cable 112 connected to the sensor substrate 12.

[0187] In the method for manufacturing the radiographic imaging device 1, the method for fixing the flexible cable 112 to the fixing plate 50 is not limited to the method described above. Figure 11A For example, Figure 12 As shown, the other end of the flexible cable 112 may be fixed to the first surface 50A of the fixing plate 50 .

[0188] The radiation imaging device 1 and radiation detector 10 of each embodiment described above may be configured as shown in the following Modifications 1 to 12. Furthermore, appropriate combinations of Modifications 1 to 12 are possible, and the configuration is not limited to Modifications 1 to 12.

[0189] (Variation 1)

[0190] In this modification of the first to third embodiments, reference is made to Figure 13 An example of a modification of the fixing plate 50 will be described. Figure 13 The equivalent of the above Figure 3 The AA line sectional view of the radiation detector 10 shown is an example of a sectional view of the radiation detector 10 according to the present modification.

[0191] In the above Figures 2A to 3 In the radiation detector 10 shown in FIG. 1 , the area of ​​the fixing plate 50 is the same as the area of ​​the base material 11. Figure 13 In the radiation detector 10 of this modified example shown, the area of ​​the fixing plate 50 is larger than the area of ​​the substrate 11. Specifically, the area of ​​the first surface 50A of the fixing plate 50 is larger than the area of ​​the first surface 11A of the substrate 11. The specific area of ​​the fixing plate 50 can be determined based on the internal size of the housing 120 that houses the radiation detector 10. Figure 13 As shown, the end of the fixing plate 50 is located outward from the end of the base material 11 (ie, the sensor substrate 12 ).

[0192] By making the area of ​​the fixing plate 50 larger than the area of ​​the base 11 in this manner, for example, when the radiation imaging device 1 is lowered and an impact is applied to the housing 120, causing the side surface of the housing 120 (the surface intersecting the irradiation surface 120A) to dent, the fixing plate 50 interferes with the side surface of the housing 120. On the other hand, the area of ​​the sensor substrate 12 is smaller than that of the fixing plate 50 and is therefore less likely to interfere with the side surface of the housing 120. Therefore, according to the radiation detector 10 of this modified example, the impact of the impact applied to the radiation imaging device 1 on the sensor substrate 12 can be suppressed.

[0193] In addition, from the viewpoint of suppressing the influence of the impact applied to the radiation imaging device 1 through the fixing plate 50 on the sensor substrate 12, as shown in FIG. Figure 13 As shown, at least a portion of the end of the fixing plate 50 only needs to protrude further outward than the end of the substrate 11. For example, unlike this modification, even when the area of ​​the fixing plate 50 is smaller than the area of ​​the substrate 11, the end of the fixing plate 50 that protrudes further outward than the end of the substrate 11 will interfere with the side surface of the frame 120. Therefore, as in this modification, the impact on the sensor substrate 12 can be suppressed.

[0194] (Variation 2)

[0195] In this modification of the first to third embodiments, reference is made to Figure 14 An example of a modification of the fixing plate 50 will be described. Figure 14 The equivalent of the above Figure 3 The AA line cross-sectional view of the radiation detector 10 shown is an example of a cross-sectional view of the radiation detector 10 according to the present modification.

[0196] In the above Figures 2A to 3 In the radiation detector 10 shown in FIG. 1 , the area of ​​the fixing plate 50 is the same as the area of ​​the base material 11. Figure 14 In the radiation detector 10 of this modified example shown, the area of ​​the fixing plate 50 is smaller than the area of ​​the base material 11. Specifically, the area of ​​the first surface 50A of the fixing plate 50 is smaller than the area of ​​the first surface 11A of the base material 11. Figure 14 In the example shown, the fixing plate 50 is not provided at a position facing the terminal 113. That is, the area of ​​the fixing plate 50 in the radiation detector 10 of this modification is smaller than the area of ​​the substrate 11 minus the area of ​​the region where the terminal 113 is provided.

[0197] Rework involves removing and reconnecting the flexible cable 112 or components electrically connected to the base material 11 (sensor substrate 12) due to a fault or misalignment. By making the area of ​​the fixing plate 50 smaller than that of the base material 11, rework can be performed without being obstructed by the end of the fixing plate 50, making rework of the flexible cable 112 easier.

[0198] (Variation 3)

[0199] In this modification of the first to third embodiments, reference is made to Figure 15 An example of a modification of the reinforcing substrate 40 will be described. Figure 15 The equivalent of the above Figure 3 The AA line cross-sectional view of the radiation detector 10 shown is an example of a cross-sectional view of the radiation detector 10 according to the present modification.

[0200] In the above Figures 2A to 3 In the radiation detector 10 shown in FIG. 1 , the area of ​​the reinforcing substrate 40 is the same as the area of ​​the base material 11. Figure 15 In the radiation detector 10 of this modified example, the area of ​​the reinforcing substrate 40 is larger than the area of ​​the base 11. In addition, the specific area of ​​the fixing plate 50 can be determined according to the internal size of the housing 120 that houses the radiation detector 10. Figure 15As shown, the end of the reinforcing substrate 40 is located outward from the end of the base material 11 (ie, the sensor substrate 12 ).

[0201] in addition, Figure 15 The radiation detector 10 shown is similar to the radiation detector 10 of the first modification described above, in that the area of ​​the fixing plate 50 is also larger than the area of ​​the base 11, and the end of the fixing plate 50 is also located further outward than the end of the sensor substrate 12. As an example, in the radiation detector 10 of this modification, the end of the fixing plate 50 is located at the same position as the end of the reinforcing substrate 40, and the length of the fixing plate 50 protruding from the sensor substrate 12 is the same as the length of the reinforcing substrate 40.

[0202] By making the area of ​​the reinforcing substrate 40 larger than the area of ​​the base material 11 in this manner, if, for example, the radiation imaging device 1 is dropped and an impact is applied to the housing 120, causing the side surface of the housing 120 (the surface intersecting the irradiation surface 120A) to dent, the reinforcing substrate 40 will interfere with the side surface of the housing 120. On the other hand, the area of ​​the sensor substrate 12 itself is smaller than that of the reinforcing substrate 40 and is therefore less likely to interfere with the side surface of the housing 120. Therefore, according to the radiation detector 10 of this modified example, the effects of impacts applied to the radiation imaging device 1 on the sensor substrate 12 can be suppressed.

[0203] (Variation 4)

[0204] In this modification of the first to third embodiments, reference is made to Figure 16 An example of a modification of the reinforcing substrate 40 will be described. Figure 16 The equivalent of the above Figure 3 The AA line cross-sectional view of the radiation detector 10 shown is an example of a cross-sectional view of the radiation detector 10 according to the present modification.

[0205] above Figure 3 The radiation detector 10 shown in the figure includes a reinforcing substrate 40. Figure 16 The radiation detector 10 of the present modification shown does not include the reinforcing substrate 40 and the adhesive 42. By not including the reinforcing substrate 40 in this manner, the radiation detector 10 can be reduced in weight, and thus the radiation imaging apparatus 1 can be reduced in weight.

[0206] (Variant 5)

[0207] In this modification of the first to third embodiments, reference is made to Figure 17 An example of a modification of the sealing member 72 will be described. Figure 17 The equivalent of the above Figure 3The AA line cross-sectional view of the radiation detector 10 shown is an example of a cross-sectional view of the radiation detector 10 according to the present modification.

[0208] In the above Figures 2A to 3 In the radiation detector 10 shown in FIG. 1 , the sealing member 72 for sealing between the sensor substrate 12 and the fixing plate 50 is not provided on the terminal 113 and the flexible cable 112. Figure 17 In the radiation detector 10 of this modified example, the space between the sensor substrate 12 and the fixing plate 50 is sealed by the sealing member 72 up to the ends of the sensor substrate 12 and the fixing plate 50. Specifically, the sealing member 72 is filled in the space surrounded by the fixing plate 50, the conversion layer 14 (protective layer 65), and the sensor substrate 12 up to the ends of the sensor substrate 12 and the fixing plate 50. Figure 17 As shown, the sealing member 72 is also provided on the terminal 113 and the flexible cable 112 , and the terminal 113 and the flexible cable 112 are covered by the sealing member 72 .

[0209] By sealing the gap between the sensor substrate 12 and the fixing plate 50 with the sealing member 72 up to the ends of the sensor substrate 12 and the fixing plate 50, the bending rigidity can be improved up to the ends of the radiation detector 10. Furthermore, the conversion layer 14 can be prevented from peeling off from the sensor substrate 12. Furthermore, since the sealing member 72 covers the terminals 113 and the flexible cable 112, the flexible cable 112 can be prevented from peeling off from the terminals 113.

[0210] (Variant 6)

[0211] In this modification of the first to third embodiments, reference is made to Figure 18A and Figure 18B An example of a modification of the sealing member 72 will be described. Figure 18A and Figure 18B The equivalent of the above Figure 3 The AA line cross-sectional view of the radiation detector 10 shown is an example of a cross-sectional view of the radiation detector 10 according to the present modification.

[0212] above Figures 2A to 3 The radiation detector 10 shown in the figure includes a sealing member 72 that seals between the sensor substrate 12 and the fixing plate 50. Figure 18A The radiation detector 10 of this modified example shown does not include the sealing member 72. In other words, a gap remains between the sensor substrate 12 and the fixing plate 50. By omitting the sealing member 72 in this manner, the radiation detector 10 can be made lighter, and thus the radiation imaging device 1 can be made lighter.

[0213] And, as Figure 18BAs shown, the ends of the adhesive layer 64 and the protective layer 65 can be sealed by a sealing member 78. The sealing member 78 is preferably provided in the entire area of ​​the fixing plate 50 from the first surface 50A to the surface of the protective layer 65, and does not cover the pixel area 35. As the material of the sealing member 78, a resin can be used, and a thermoplastic resin is particularly preferred. Specifically, an acrylic adhesive or a polyurethane adhesive can be used as the sealing member 72. By sealing the ends of the adhesive layer 64 and the protective layer 65 with the sealing member 78, it is possible to prevent the adhesive layer 64 and the protective layer 65 from peeling off.

[0214] (Variant 7)

[0215] Regarding this modification of the first to third embodiments, refer to Figures 19A to 19E Provide explanation. Figures 19A to 19E The equivalent of the above Figure 3 The AA line cross-sectional view of the radiation detector 10 shown is an example of a cross-sectional view of the radiation detector 10 according to the present modification.

[0216] exist Figure 19A In the radiation detector 10 of this modified example, the end of the fixing plate 50 is supported by a support member 74. Specifically, one end of the support member 74 is connected to the flexible cable 112 or the first surface 11A of the substrate 11, while the other end of the support member 74 is connected to the end of the first surface 50A of the fixing plate 50 via an adhesive layer 76. Furthermore, the support member 74 may be provided over the entire periphery of the sensor substrate 12 or only over a portion of the periphery. Thus, by supporting the end of the fixing plate 50, which extends to form a space between the fixing plate 50 and the sensor substrate 12, with the support member 74, it is possible to prevent the conversion layer 14 from peeling off from the sensor substrate 12. Furthermore, by providing the support member 74 on the flexible cable 112 and the terminal 113, it is possible to prevent the flexible cable 112 from peeling off from the terminal 113.

[0217] In addition, if Figure 19B As shown in FIG. 1 , the sealing member 72 may be filled in the entire space surrounded by the support member 74, the fixing plate 50, the conversion layer 14 (protective layer 65), and the sensor substrate 12 to perform sealing. Figure 19C As shown, the radiation detector 10 may include a sealing member 72 .

[0218] And, as Figure 19D As shown, the support member 74 may be provided outside the sensor substrate 12 . Figure 19DThe radiation detector 10 shown is similar to the radiation detector 10 of Modification 3 described above, in that the areas of the reinforcing substrate 40 and the fixing plate 50 are larger than the area of ​​the base 11, and the ends of the reinforcing substrate 40 and the fixing plate 50 are located further outward than the ends of the base 11. One end of the support member 74 is connected to the reinforcing substrate 40 or the flexible cable 112, and the other end of the support member 74 is connected to the end of the first surface 50A of the fixing plate 50 via an adhesive layer 76.

[0219] And, as Figure 19E As shown, the support member 74 can be provided only outside the area where the flexible cable 112 and the terminal 113 are provided. Figure 19E 1 shows a mode in which the end portion of the fixing plate 50 is supported by the supporting member 74 in the region inside the region where the terminals 113 are provided on the first surface 11A of the substrate 11. Figure 19E In the example shown, one end of support member 74 is connected to first surface 11A of substrate 11, and the other end of support member 74 is connected to the end of first surface 50A of fixing plate 50 via adhesive layer 76. Thus, by not providing support member 74 on flexible cable 112 and terminal 113, rework of flexible cable 112 can be facilitated.

[0220] (Variation 8)

[0221] Regarding this modification of the first embodiment, refer to Figure 20 Provide explanation. Figure 20 The equivalent of the above Figure 3 The AA line cross-sectional view of the radiation detector 10 shown is an example of a cross-sectional view of the radiation detector 10 according to the present modification.

[0222] like Figure 20As shown, in the radiation detector 10 of this modified example, a reflective layer 68 is provided between the fixed plate 50 and the conversion layer 14. The reflective layer 68 covers the entire first surface 50A of the fixed plate 50. The reflective layer 68 has the function of reflecting the light converted by the conversion layer 14. The material of the reflective layer 68 is preferably composed of a metal or a resin material containing a metal oxide. Examples of materials that can be used for the reflective layer 68 include white PET, TiO2, Al2O3, foamed white PET, and mirror-reflective aluminum. White PET is PET with a white pigment such as TiO2 or barium sulfate added to PET, and foamed white PET is white PET with a porous surface. Furthermore, the material of the reflective layer 68 can be a laminated film of a resin film and a metal film. Examples of laminated films of a resin film and a metal film include sheets of ALPET (registered trademark). The thickness of the reflective layer 68 is preferably greater than 10 μm and less than 40 μm. In this manner, by providing the reflective layer 68 between the fixing plate 50 and the conversion layer 14 , the light converted by the conversion layer 14 can be efficiently guided to the pixels 30 of the sensor substrate 12 .

[0223] (Variant 9)

[0224] Regarding this modification of the first embodiment, refer to Figure 21 Provide explanation. Figure 21 The equivalent of the above Figure 3 The AA line cross-sectional view of the radiation detector 10 shown is an example of a cross-sectional view of the radiation detector 10 according to the present modification.

[0225] like Figure 21 As shown, the conversion layer 14 and the fixing plate 50 of the radiation detector 10 of this modification are covered with a moisture-proof film 66. Specifically, the conversion layer 14 formed on the fixing plate 50 is integrally covered with the moisture-proof film 66 in its entirety.

[0226] As the moisture-proof film 66, for example, PARYLENE (registered trademark) film, insulating sheets such as polyethylene terephthalate, and laminated films of resin and metal films can be used. Examples of laminated films of resin and metal films include sheets of ALPET (registered trademark). By covering the entire fixing plate 50 and the conversion layer 14 with the moisture-proof film 66, the moisture-proof properties of the conversion layer 14 can be improved during the manufacturing process of the radiation imaging device 1, particularly before the conversion layer 14 formed on the fixing plate 50 is placed on the sensor substrate 12.

[0227] (Variation 10)

[0228] Regarding this modification of the first embodiment, refer to Figure 22 Provide explanation. Figure 22 The equivalent of the above Figure 3 The AA line cross-sectional view of the radiation detector 10 shown is an example of a cross-sectional view of the radiation detector 10 according to the present modification.

[0229] exist Figure 22 FIG. 1 shows a radiation detector 10 manufactured by the following manufacturing method, wherein the process of providing the conversion layer 14 on the first surface 11A of the substrate 11 is similar to that of the reference numeral 14. Figure 5C The method of explanation is different. Figure 22 In the manufacturing method of the radiation detector 10 shown in FIG. 1 , the timing of electrically connecting the flexible cable 112 to the sensor substrate 12 is the same as that of the reference Figure 5D The timing of the explanation is different.

[0230] exist Figure 22 In the method for manufacturing the radiation detector 10 shown, before providing the conversion layer 14 on the first surface 11A of the substrate 11, the terminals 113 are formed on the first surface 11A of the substrate 11, and the terminals 113 are electrically connected to the flexible cable 112. Furthermore, a support member 74 is provided on the flexible cable 112. Alternatively, the support member 74 can be provided on the first surface 50A of the fixing plate 50. Furthermore, an uncured sealing member 72 is provided in the region formed on the fixing plate 50, extending from the peripheral edge 14B of the conversion layer 14 to the first surface 50A of the fixing plate 50. The conversion layer 14 formed on the fixing plate 50 and provided with the uncured sealing member 72 is then placed on the first surface 11A of the substrate 11.

[0231] In this state, the internal space 79 formed by the substrate 11, the fixing plate 50, the sealing member 72, and the support member 74 is depressurized to a pressure below atmospheric pressure, such as 0.2 to 0.5 atmospheres, using a pressure reducing pump or the like. By depressurizing the internal space 79 formed by the substrate 11, the fixing plate 50, the sealing member 72, and the support member 74 to a pressure below atmospheric pressure, the substrate 11 (sensor substrate 12) and the fixing plate 50 are pressed against the internal space 79 from the outside under atmospheric pressure. In this manner, in the manufacturing method of the radiation detector 10 of this modified example, the conversion layer 14 is provided on the first surface 11A of the substrate 11.

[0232] In the radiation detector 10 of this modified example, the base material 11 and the fixing plate 50 are pressed under atmospheric pressure, and the conversion layer 14 is provided on the first surface 11A of the base material 11. Figure 22 As shown, the conversion layer 14 can be brought into close contact with the substrate 11 without providing the adhesive layer 70 .

[0233] (Variation 11)

[0234] Regarding this modification of the third embodiment, refer to Figure 23Provide explanation. Figure 23 The equivalent of the above Figure 3 The AA line cross-sectional view of the radiation detector 10 shown is an example of a cross-sectional view of the radiation detector 10 according to the present modification.

[0235] exist Figure 23 In the radiation detector 10 of the present modification shown, a reinforcing substrate 82 covering the entire upper surface of the conversion layer 14 is provided on the conversion layer 14 via an adhesive 80. The reinforcing substrate 82 has the function of reinforcing the bending rigidity of the sensor substrate 12. Therefore, the bending rigidity of the reinforcing substrate 82 is higher than that of the base material 11, and the dimensional change (deformation) relative to the force applied in the direction perpendicular to the surface opposite to the conversion layer 14 is smaller than the dimensional change relative to the force applied in the direction perpendicular to the first surface 11A of the base material 11. In addition, the thickness of the reinforcing substrate 82 of the present modification is thicker than that of the base material 11. Specifically, as the reinforcing substrate 82, it is preferable to have the same bending elastic modulus and bending rigidity as the reinforcing substrate 40 described above. Therefore, as the material of the reinforcing substrate 82, the same material as the reinforcing substrate 40 can be applied.

[0236] Furthermore, the outer periphery of the reinforcing substrate 82 of this modified example is bent to follow the inclination of the peripheral edge 14B of the conversion layer 14. The reinforcing substrate 82 also covers the portion of the first surface 11A of the substrate 11 covered by the adhesive layer 64 and the protective layer 65, as well as the first surface 11A of the substrate 11 beyond the portion covered by the adhesive layer 64 and the protective layer 65. In other words, the ends of the adhesive layer 64 and the protective layer 65 are sealed by the reinforcing substrate 82. The portion of the reinforcing substrate 82 that extends above the sensor substrate 12 is bonded to the first surface 11A of the substrate 11 via the adhesive 80.

[0237] In the radiation detector 10 of this modified example, the reinforcing substrate 82 covers the upper surface of the conversion layer 14, thereby improving the flexural rigidity of the sensor substrate 12. Furthermore, in the radiation detector 10 of this modified example, the reinforcing substrate 82 covers the ends of the adhesive layer 64 and the protective layer 65, thereby preventing the protective layer 65 from peeling off.

[0238] In addition, the area where the reinforcing substrate 82 covers the first surface 11A of the base material 11 (that is, the area where the reinforcing substrate 82 extends on the sensor substrate 12) is not limited to Figure 23 For example, the region extending to the end portion of the outer edge of the sensor substrate 12 (base material 11) may be used.

[0239] (Variation 12)

[0240] In this modification of the first to third embodiments, reference is made to Figure 24A and Figure 24B A modification of the storage state of the radiation detector 10 in the radiation imaging apparatus 1 will be described. Figure 24A and Figure 24B This is an example of a cross-sectional view of the radiation imaging device 1 according to this modification.

[0241] In the above Figure 4 In the radiation imaging device 1 shown in FIG. 1 , a space is provided between the top plate on the irradiation surface 120A side of the housing 120 and the reinforcing substrate 40 . Figure 24A In the radiographic imaging device 1 of this modified example, the reinforcing substrate 40 contacts the inner wall surface of the top plate on the irradiation surface 120A side of the housing 120. In this case, the radiation detector 10 and the inner wall surface of the housing 120 may be bonded via an adhesive layer or simply contacted without an adhesive layer. This contact between the radiation detector 10 and the inner wall surface of the housing 120 further ensures the rigidity of the radiation detector 10.

[0242] And, in Figure 24B In the radiation imaging device 1 of the present modification shown in FIG. 1 , the reinforcing substrate 40 is used as a top plate on the irradiation surface 120A side of the housing 120. In this case, as shown in FIG. Figure 24B As shown in FIG. 1 , the area of ​​the reinforcing substrate 40 is larger than that of the sensor substrate 12 , and the end of the reinforcing substrate 40 protrudes further outward than the end of the sensor substrate 12 . Figure 24B In the illustrated radiographic imaging device 1, the radiation detector 10 is housed within the housing 120 by embedding the reinforcing substrate 40 within the opening of the housing 120, which has an opening in the top plate portion, on the irradiation surface 120A side. By using the reinforcing substrate 40 of the radiation detector 10 as the top plate of the housing 120 in this manner, the thickness of the housing 120, more specifically, the thickness in the direction of radiation transmission, can be reduced, thereby achieving a thinner profile for the radiographic imaging device 1. Furthermore, since the top plate of the housing 120 itself is no longer required, the radiographic imaging device 1 can be further reduced in weight.

[0243] (Variant 13)

[0244] In this modification of the third embodiment, reference is made to Figure 25A and Figure 25B A modification of the storage state of the radiation detector 10 in the radiation imaging apparatus 1 will be described. Figure 25A and Figure 25B This is an example of a cross-sectional view of the radiation imaging device 1 according to this modification.

[0245] exist Figure 25A In the radiographic imaging device 1 of this modified example, the radiation detector 10, the control board 110, and the power supply unit 108 are juxtaposed in the horizontal direction in the figure. Figure 25AIllustration of the driving substrate 200 and the signal processing substrate 300 is omitted.

[0246] like Figure 25A As shown, a thin sheet 116 is further provided within the housing 120 on the side of the transmission radiation detector 10 from which radiation is emitted. Examples of the thin sheet 116 include a copper sheet. The copper sheet prevents incident radiation from generating secondary radiation, thereby preventing it from scattering backward (i.e., toward the conversion layer 14). The thin sheet 116 preferably covers at least the entire surface of the conversion layer 14 on the side from which radiation is emitted, and also covers the entire conversion layer 14.

[0247] In addition, Figure 25A , the power supply unit 108 and the control substrate 110 are both provided on one side of the radiation detector 10 (specifically, on one side of the rectangular pixel area 35). However, the positions of the power supply unit 108 and the control substrate 110 are not limited to the positions of the power supply unit 108 and the control substrate 110. Figure 25A For example, the power supply unit 108 and the control substrate 110 may be dispersedly provided on each of two opposing sides of the pixel region 35 , or may be dispersedly provided on each of two adjacent sides.

[0248] And, as Figure 25B In the example shown, when the radiation detector 10, the control substrate 110 and the power supply unit 108 are arranged side by side in a direction intersecting the direction in which the sensor substrate 12 and the conversion layer 14 are stacked, the thickness of the frame 120 can be different in the parts of the frame 120 where the power supply unit 108 and the control substrate 110 are respectively provided and the part of the frame 120 where the radiation detector 10 is provided.

[0249] like Figure 25A and Figure 25B In the example shown, the thickness of each of the power supply unit 108 and the control substrate 110 is often thicker than the thickness of the radiation detector 10. In this case, Figure 25B In the example shown, the thickness of the portion of the housing 120 where the radiation detector 10 is located can be thinner than the portion of the housing 120 where the power supply unit 108 and the control board 110 are located. Furthermore, if the thickness of the portion of the housing 120 where the power supply unit 108 and the control board 110 are located differs from the portion of the housing 120 where the radiation detector 10 is located, a step difference may occur at the boundary between the two portions, potentially causing discomfort to the subject who comes into contact with the boundary 120B. Therefore, it is preferable that the boundary 120B be inclined. Furthermore, the portion of the housing 120 where the power supply unit 108 and the control board 110 are located can be formed of different materials than the portion of the housing 120 where the radiation detector 10 is located.

[0250] According to the radiation imaging apparatus 1 of this modification, it is possible to configure an ultra-thin radiation imaging apparatus 1 corresponding to the thickness of the radiation detector 10 .

[0251] The radiation imaging device 1 and the radiation detector 10 and the manufacturing method thereof are not limited to those described in the reference Figures 1 to 25B For example, as mentioned above Figure 1 As shown, the pixels 30 are described as being arranged in a two-dimensional matrix, but this is not limiting. For example, a one-dimensional arrangement or a honeycomb arrangement is also possible. Furthermore, the shape of the pixels is not limited and can be rectangular or polygonal, such as a hexagon. Furthermore, the shape of the pixel region 35 is also not limited, as is natural.

[0252] In addition, the structures and manufacturing methods of the radiation imaging device 1 and the radiation detector 10 in the above-described embodiment and various modifications are merely examples and can of course be modified according to circumstances without departing from the spirit of the present invention.

[0253] The entire contents of Japanese Patent Application No. 2019-239569 filed on December 27, 2019 are incorporated into this specification by reference.

[0254] All documents, patent applications, and technical specifications described in this specification are incorporated herein by reference to the same extent as if each individual document, patent application, or technical specification was specifically and individually indicated to be incorporated by reference.

[0255] Explanation of symbols

[0256] 1-Radiation imaging device, 10-Radiation detector, 11-Base material, 11A-First surface, 11B-Second surface, 12-Sensor substrate, 14-Conversion layer, 14A-Center portion, 14B-Peripheral portion, 30-Pixel, 32-TFT (switching element), 34-Sensor portion, 35-Pixel area, 36-Signal wiring, 38-Scanning wiring, 39-Common wiring, 40, 82-Reinforcement substrate, 42, 80-Adhesive, 50-Fixed plate, 50A-First surface, 50B-Second surface, 52-Fixed plate, 60-Adhesive layer, 62-Reflective layer, 64-Adhesive layer, 65-Protective layer, 66-Moisture-proof film, 68-Reflective layer, 70, 71-Adhesive layer, 7 2-sealing component, 74-support component, 76-adhesive layer, 78-sealing component, 79-internal space, 100-control unit, 100A-CPU, 100B-memory, 100C-storage unit, 102-driving unit, 104-signal processing unit, 106-image memory, 108-power supply unit, 110-control substrate, 112, 112A, 112B-flexible cable, 113-terminal, 114-power line, 116-sheet, 120-frame, 120A-irradiation surface, 120B-boundary, 200-driving substrate, 210-driving IC, 300-signal processing substrate, 310-signal processing IC, 400-support body, 402-peeling layer.

Claims

1. A method for manufacturing a radiographic imaging device, comprising: A step of providing a flexible base material on a support and forming a substrate in a pixel region of the base material, wherein the substrate is provided with a plurality of pixels for accumulating charges generated by light converted from radiation; a step of providing a conversion layer for converting the radiation into light on the surface of the substrate on which the pixels are provided; a step of connecting one end of a flexible cable connected to the circuit portion to the substrate; a step of providing a fixing plate on a surface of the conversion layer opposite to the substrate side; The process of fixing the flexible cable to the fixing plate; and After fixing the flexible cable to the fixing plate, the step of peeling the substrate provided with the conversion layer and the fixing plate from the support body while the flexible cable is fixed to the fixing plate.

2. A method for manufacturing a radiographic imaging device, comprising: A step of providing a flexible base material on a support and forming a substrate in a pixel region of the base material, wherein the substrate is provided with a plurality of pixels for accumulating charges generated by light converted from radiation; forming a conversion layer for converting the radiation into light on the fixing plate; a step of providing the conversion layer on the surface of the substrate on which the pixels are provided, such that the surface of the conversion layer opposite to the fixing plate faces the surface of the substrate on which the pixels are provided; a step of connecting one end of a flexible cable connected to the circuit portion to the substrate; The process of fixing the flexible cable to the fixing plate; and a step of peeling the substrate provided with the conversion layer and the fixing plate from the support.

3. The method for manufacturing a radiographic imaging device according to claim 1 or 2, wherein: The flexible cable is fixed to a surface of the fixing plate opposite to a surface on which the conversion layer is provided.

4. The method for manufacturing a radiographic imaging device according to claim 1 or 2, wherein: The flexible cable is fixed to the surface of the fixing plate on which the conversion layer is provided.

5. The method for manufacturing a radiographic imaging device according to claim 1 or 2, wherein: Before the step of peeling the substrate from the support, the method further includes: The step of electrically connecting the circuit unit to the flexible cable; and a step of fixing the circuit unit to a surface of the fixing plate opposite to a surface on which the conversion layer is provided.

6. The method for manufacturing a radiographic imaging device according to claim 1 or 2, wherein: The conversion layer is brought into close contact with the surface of the substrate on which the pixels are provided by a reduced pressure sealing method, thereby providing the conversion layer on the surface of the substrate on which the pixels are provided.

7. The method for manufacturing a radiographic imaging device according to claim 1 or 2, wherein: The method for manufacturing the radiographic imaging device further includes: After the substrate is peeled off from the support, a reinforcing substrate having higher rigidity than the base is provided on a surface of the substrate opposite to the surface on which the conversion layer is provided.

8. The method for manufacturing a radiographic imaging device according to claim 7, wherein: The method for manufacturing the radiographic imaging device further includes: The step of housing the substrate, the conversion layer, the fixing plate, and the circuit unit in a frame having the reinforcing substrate as a top plate.

9. The method for manufacturing a radiographic imaging device according to claim 1 or 2, wherein: The method for manufacturing the radiographic imaging device further includes: The step of sequentially housing the substrate, the conversion layer, the fixing plate, and the circuit unit in the housing in this arrangement order from the side irradiated with the radiation.

10. The method for manufacturing a radiographic imaging device according to claim 1 or 2, wherein: The material of the fixing plate includes carbon.

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