Method for manufacturing semiconductor chip

Abstract

A method for manufacturing a semiconductor chip, which comprises the following steps (S1) to (S4) in sequence: · Step (S1): a step of preparing a wafer for manufacturing a semiconductor chip, wherein a groove portion serving as a predetermined dividing line is formed on the bump forming surface of the semiconductor wafer having a bump forming surface with bumps in a manner that does not reach the back surface; · Step (S2): a step of pressing and applying a first curable resin (x1) to the bump forming surface of the wafer for manufacturing the semiconductor chip, and simultaneously embedding the first curable resin (x1) in the groove portion formed on the wafer for manufacturing the semiconductor chip while covering the bump forming surface of the wafer for manufacturing the semiconductor chip with the first curable resin (x1); · Step (S3): a step of pressing and applying a first curable resin (x1) to the bump forming surface of the wafer for manufacturing the semiconductor chip, and simultaneously embedding the first curable resin (x1) in the groove portion formed on the wafer for manufacturing the semiconductor chip; Sequence (S3): a process of curing the first curable resin (x1) to obtain a wafer for manufacturing a semiconductor chip with a first curable resin film (r1); · Process (S4): a process of singulating the wafer for manufacturing a semiconductor chip with the first curable resin film (r1) along the predetermined dividing line to obtain a semiconductor chip in which at least the bump forming surface and the side surface are covered by the first curable resin film (r1); after the process (S2) and before the process (S3), after the process (S3) and before the process (S4), or in the process (S4), further comprising the following process (S‑BG): · Process (S‑BG): a process of grinding the back side of the wafer for manufacturing a semiconductor chip.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a semiconductor chip, and more particularly to a method for manufacturing a semiconductor chip provided with a cured resin film as a protective film. Background Art

[0002] In recent years, semiconductor devices using a so-called flip-chip mounting method have been manufactured. In the flip-chip method, a semiconductor chip having bumps on its circuit surface and a substrate for mounting the semiconductor chip are stacked so that the circuit surface of the semiconductor chip and the substrate face each other, and the semiconductor chip is mounted on the substrate.

[0003] Note that the semiconductor chip can generally be obtained by singulating a semiconductor wafer having bumps on its circuit surface.

[0004] A protective film is provided on a semiconductor wafer having bumps for the purpose of protecting a bonding portion between the bumps and the semiconductor wafer (hereinafter also referred to as a “bump neck”).

[0005] For example, in Patent Documents 1 and 2, a laminate formed by stacking a supporting substrate, an adhesive layer, and a thermosetting resin layer in sequence is pressed and attached to the bump forming surface of a semiconductor wafer having bumps with the thermosetting resin layer as the bonding surface, and then the thermosetting resin layer is heated to cure it to form a protective film.

[0006] Prior art literature

[0007] Patent Literature

[0008] Patent Document 1: Japanese Patent Application Laid-Open No. 2015-092594

[0009] Patent Document 2: Japanese Patent Application Laid-Open No. 2012-169484 Summary of the Invention

[0010] Technical problem to be solved by the invention

[0011] In recent years, as ICs (semiconductor components) incorporated into electronic devices and other products have become increasingly smaller and thinner, there has been a demand for even thinner semiconductor chips. However, as semiconductor chips become thinner, their strength decreases. Consequently, there has been a technical problem of semiconductor chips being easily damaged during transport and subsequent packaging processes.

[0012] Therefore, it has been considered to form a protective film on the bump-forming surface of a semiconductor wafer to protect the bump necks while also improving the strength of the semiconductor chip. However, forming a protective film only on the bump-forming surface of a semiconductor wafer does not sufficiently improve the strength of the semiconductor chip. Furthermore, the protective film may peel off.

[0013] The present invention has been made in view of the related technical problems, and an object of the present invention is to provide a method for manufacturing a semiconductor chip that is excellent in strength and can suppress the peeling of a protective film.

[0014] Means for solving technical problems

[0015] The inventors of the present invention have come to the conclusion that by also applying a protective film, which is provided to protect the bump necks, to the side surfaces of the semiconductor chip, the strength of the semiconductor chip can be increased while preventing the protective film from falling off, thereby enabling the construction of an extremely rational structure. Based on this insight, the inventors have diligently researched and discovered a manufacturing method that achieves this insight, thus completing the present invention.

[0016] That is, the present invention relates to the following [1] to

[14] .

[0017] [1] A method for manufacturing a semiconductor chip, comprising the following steps (S1) to (S4) in sequence: Step (S1): preparing a wafer for manufacturing a semiconductor chip, wherein a groove serving as a predetermined dividing line is formed on a bump forming surface of the semiconductor wafer having a bump forming surface with bumps so as not to reach a back surface;

[0018] Step (S2): a step of pressing and applying a first curable resin (x1) to the bump-forming surface of the semiconductor chip manufacturing wafer, covering the bump-forming surface of the semiconductor chip manufacturing wafer with the first curable resin (x1), and embedding the first curable resin (x1) in the groove portion formed in the semiconductor chip manufacturing wafer;

[0019] Step (S3): a step of curing the first curable resin (x1) to obtain a wafer for semiconductor chip production with a first cured resin film (r1);

[0020] Step (S4): Singulating the semiconductor chip production wafer with the first cured resin film (r1) along the planned dividing lines to obtain semiconductor chips in which at least the bump formation surface and side surfaces are covered with the first cured resin film (r1);

[0021] After the step (S2) and before the step (S3), after the step (S3) and before the step (S4), or during the step (S4), the following step (S-BG) is further included.

[0022] Step (S-BG): a step of grinding the back surface of the semiconductor chip fabrication wafer.

[0023] [2] The method for manufacturing a semiconductor chip as described in [1] above, wherein:

[0024] The step (S2) is implemented as follows: a first stack (α1) having a stacked structure formed by stacking a first support sheet (Y1) and a layer (X1) of the first curable resin (x1) is pressed and attached to the bump forming surface of the wafer for manufacturing the semiconductor chip with the layer (X1) as the attachment surface.

[0025] [3] The method for manufacturing a semiconductor chip as described in [2] above, wherein:

[0026] The step (S-BG) is included after the step (S2) and before the step (S3),

[0027] The step (S-BG) is performed by grinding the back surface of the semiconductor chip manufacturing wafer with the first stack (α1) attached thereto, and then peeling the first supporting sheet (Y1) from the first stack (α1).

[0028] The step ( S4 ) is performed by cutting the portion of the first cured resin film ( r1 ) formed in the groove portion of the semiconductor chip fabrication wafer with the first cured resin film ( r1 ) along the planned dividing line.

[0029] [4] The method for manufacturing a semiconductor chip as described in [2] above, wherein:

[0030] The step (S-BG) is included after the step (S3) and before the step (S4),

[0031] The step (S3) is performed without peeling the first supporting sheet (Y1) from the first laminate (α1).

[0032] The step (S-BG) is performed by grinding the back surface of the semiconductor chip manufacturing wafer with the first stack (α1) attached thereto, and then peeling the first supporting sheet (Y1) from the first stack (α1).

[0033] The step ( S4 ) is performed by cutting the portion of the first cured resin film ( r1 ) formed in the groove portion of the semiconductor chip fabrication wafer with the first cured resin film ( r1 ) along the planned dividing line.

[0034] [5] The method for manufacturing a semiconductor chip as described in [2] above, wherein:

[0035] The step (S-BG) is included after the step (S3) and before the step (S4),

[0036] After the step (S2) and before the step (S3), the first supporting sheet (Y1) is peeled off from the first laminate (α1),

[0037] The step (S-BG) is performed by attaching a back grinding sheet (b-BG) to the surface of the first cured resin film (r1) of the semiconductor chip manufacturing wafer having the first cured resin film (r1), grinding the back surface of the semiconductor chip manufacturing wafer with the back grinding sheet (b-BG) attached thereto, and then peeling the back grinding sheet (b-BG) from the semiconductor chip manufacturing wafer having the first cured resin film (r1).

[0038] The step ( S4 ) is performed by cutting the portion of the first cured resin film ( r1 ) formed in the groove portion of the semiconductor chip fabrication wafer with the first cured resin film ( r1 ) along the planned dividing line.

[0039] [6] The method for manufacturing a semiconductor chip as described in [2] above, wherein:

[0040] The step (S4) includes the step (S-BG),

[0041] After the step (S2) and before the step (S3), the first supporting sheet (Y1) is peeled off from the first laminate (α1),

[0042] The process (S4) is implemented as follows: after forming a cut along the predetermined dividing line or forming a modified area along the predetermined dividing line in the portion of the first cured resin film (r1) of the wafer for manufacturing a semiconductor chip with the first cured resin film (r1) formed in the groove portion, as the process (S-BG), a back grinding sheet (b-BG) is attached to the surface of the first cured resin film (r1) of the wafer for manufacturing a semiconductor chip with the first cured resin film (r1), and the back side of the wafer for manufacturing a semiconductor chip is ground in the state where the back grinding sheet (b-BG) is attached.

[0043] [7] The method for manufacturing a semiconductor chip according to any one of [1] to [6] above, wherein:

[0044] It also includes the following step (T),

[0045] Step (T): a step of forming a second cured resin film (r2) on the back surface of the semiconductor chip fabrication wafer.

[0046] [8] The method for manufacturing a semiconductor chip according to any one of [1] to [7] above, wherein:

[0047] Also comprising the following step (U),

[0048] Step (U): a step of removing the first cured resin film (r1) covering the top of the bump or the first cured resin film (r1) adhering to a portion of the top of the bump to expose the top of the bump.

[0049] [9] The method for manufacturing a semiconductor chip as described in [8] above, wherein:

[0050] The step (U) is performed by plasma etching.

[0051]

[10] The method for manufacturing a semiconductor chip according to any one of [1] to [9] above, wherein:

[0052] Under the conditions of temperature 90° C. and frequency 1 Hz, a strain of 400% is generated in the test piece of the layer (X1). When the shear modulus G′ of the test piece of the layer (X1) is measured by strain dispersion measurement, the shear modulus G′ is 5.0×10 Pa to 1.0×10 6 Pa.

[0053]

[11] The method for manufacturing a semiconductor chip according to any one of [1] to

[10] above, wherein:

[0054] The thickness of the layer (X1) is 10 μm or more and 200 μm or less.

[0055]

[12] The method for manufacturing a semiconductor chip according to any one of [1] to

[11] above, wherein:

[0056] The width of the groove is 10 μm to 2000 μm.

[0057]

[13] The method for manufacturing a semiconductor chip according to any one of [1] to

[12] above, wherein:

[0058] The depth of the groove is 30 μm to 700 μm.

[0059]

[14] The method for manufacturing a semiconductor chip according to any one of [1] to

[13] above, wherein:

[0060] The first cured resin film (r1) is transparent.

[0061] Effects of the Invention

[0062] According to the present invention, a method for manufacturing a semiconductor chip that is excellent in strength and can suppress the peeling of a protective film can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0063] Figure 1 This is a schematic diagram of the steps of the method for manufacturing a semiconductor chip according to the present invention.

[0064] Figure 2 This is a plan view showing an example of a wafer for semiconductor chip production prepared in step ( S1 ).

[0065] Figure 3 This is a schematic cross-sectional view showing an example of a wafer for semiconductor chip production prepared in step ( S1 ).

[0066] Figure 4 It is a figure which shows the outline of step (S2).

[0067] Figure 5 It is a diagram showing an outline of the manufacturing method of the first embodiment.

[0068] Figure 6 It is a diagram showing an outline of the manufacturing method of the second embodiment.

[0069] Figure 7 It is a diagram showing an outline of the manufacturing method according to the third embodiment.

[0070] Figure 8 It is a diagram showing an outline of the manufacturing method according to the fourth embodiment.

[0071] Figure 9 This is a schematic cross-sectional view showing the structure of the first stacked body (α1) used in the production method of the present invention.

[0072] Figure 10 This is a schematic cross-sectional view showing an example of a specific structure of the first stacked body (α1).

[0073] Figure 11 This is a schematic cross-sectional view showing another example of the specific structure of the first stacked body (α1).

[0074] Figure 12 This is a schematic cross-sectional view showing still another example of the specific structure of the first stacked body (α1).

[0075] Figure 13 It is a drawing showing the back side observation result in Example instead of a photograph.

[0076] Figure 14 It is a drawing showing the cross-sectional grinding observation results in Examples instead of photographs. DETAILED DESCRIPTION

[0077] In this specification, the term "active ingredient" refers to the components contained in the target composition excluding diluents such as water and organic solvents.

[0078] In addition, in this specification, "(meth)acrylic acid" means both "acrylic acid" and "methacrylic acid", and the same applies to other similar terms.

[0079] In addition, in this specification, the weight average molecular weight and the number average molecular weight are polystyrene conversion values ​​measured by gel permeation chromatography (GPC).

[0080] In this specification, for preferred numerical ranges (e.g., content ranges), the lower limit and upper limit values ​​described in sections can be independently combined. For example, in the description "preferably 10 to 90, more preferably 30 to 60," the "preferable lower limit (10)" and "more preferably upper limit (60)" can be combined to form "10 to 60."

[0081] [Method for manufacturing a semiconductor chip of the present invention]

[0082] The process diagram of the method for manufacturing a semiconductor chip of the present invention is as follows Figure 1 shown.

[0083] The method for manufacturing a semiconductor chip of the present invention generally includes a step (S1) of preparing a wafer for manufacturing a semiconductor chip, a step (S2) of attaching a first stack (α1), a step (S3) of curing a first curable resin (x1), and a singulation step (S4), and also includes a step (S-BG) of grinding the back side of the wafer for manufacturing a semiconductor chip.

[0084] Specifically, the method for manufacturing a semiconductor chip of the present invention includes the following steps (S1) to (S4) in sequence.

[0085] Step (S1): a step of preparing a wafer for semiconductor chip fabrication, wherein grooves serving as planned dividing lines are formed on a bump forming surface of the semiconductor wafer having bumps so as not to reach a back surface;

[0086] Step (S2): a step of pressing and applying a first curable resin (x1) to the bump-forming surface of the semiconductor chip manufacturing wafer, covering the bump-forming surface of the semiconductor chip manufacturing wafer with the first curable resin (x1), and embedding the first curable resin (x1) in the groove portion formed in the semiconductor chip manufacturing wafer;

[0087] Step (S3): a step of curing the first curable resin (x1) to obtain a wafer for semiconductor chip production with a first cured resin film (r1);

[0088] Step (S4): Singulating the semiconductor chip production wafer with the first cured resin film (r1) along the planned dividing lines to obtain semiconductor chips in which at least the bump formation surface and side surfaces are covered with the first cured resin film (r1);

[0089] After the step (S2) and before the step (S3), after the step (S3) and before the step (S4), or during the step (S4), the following step (S-BG) is further included.

[0090] Step (S-BG): a step of grinding the back surface of the semiconductor chip fabrication wafer.

[0091] By using a manufacturing method including the above steps, the following semiconductor chip can be obtained: not only the bump forming surface but also the side surface is covered by the first cured resin film (r1), the strength is excellent and the first cured resin film (r1) as a protective film is difficult to fall off.

[0092] It is worth noting that "covering" here means forming a first cured resin film (r1) along the shape of a semiconductor chip on at least the bump-forming surface and side surfaces of a semiconductor chip. That is, the present invention is significantly different from packaging technology that encapsulates multiple semiconductor chips in resin.

[0093] Hereinafter, the method for manufacturing a semiconductor chip of the present invention will be described in detail for each step.

[0094] It is worth noting that in the following description, “semiconductor chip” is referred to as “chip” and “semiconductor wafer” is referred to as “wafer”.

[0095] [Step (S1)]

[0096] Regarding an example of a semiconductor wafer prepared in step (S1), a top view is shown as follows Figure 2 As shown, the schematic cross-sectional view is as follows Figure 3 shown.

[0097] In step (S1), a wafer 10 for producing semiconductor chips is prepared. In the wafer 10 for producing semiconductor chips, a groove 13 serving as a predetermined dividing line is formed on the bump forming surface 11a of a semiconductor wafer 11 having a bump forming surface 11a with bumps 12 so as not to reach the back surface 11b.

[0098] It is worth noting that in Figure 2In addition, in the drawings used in the following description, in order to facilitate understanding of the features of the present invention, main parts may be enlarged for convenience, and the size ratios of various components are not necessarily the same as the actual ones.

[0099] The shape of the bump 12 is not particularly limited, and may be any shape as long as it can be in contact with and fixed to an electrode or the like on a substrate for mounting a chip.

[0100] For example, in Figure 3 In the embodiment, the bump 12 is spherical, but the bump 12 may also be a spheroid. The spheroid may be, for example, a spheroid extending vertically relative to the bump-forming surface 11a of the wafer 11, or a spheroid extending horizontally relative to the bump-forming surface 11a of the wafer 11. Furthermore, the bump 12 may be in the shape of a pillar (column).

[0101] The height of the bump 12 is not particularly limited and can be appropriately changed according to design requirements.

[0102] For example, it is 30 μm to 300 μm, preferably 60 μm to 250 μm, and more preferably 80 μm to 200 μm.

[0103] It should be noted that the “height of the bump 12 ” refers to the height from the bump forming surface 11 a to the highest position of one bump.

[0104] The number of bumps 12 is not particularly limited and can be appropriately changed according to design requirements.

[0105] The wafer 11 is a semiconductor wafer having circuits such as wiring, capacitors, diodes, and transistors formed on its surface. The material of the wafer is not particularly limited, and examples thereof include silicon wafers, silicon carbide wafers, compound semiconductor wafers, glass wafers, and sapphire wafers.

[0106] The size of the wafer 11 is not particularly limited, but from the perspective of improving batch processing efficiency, it is generally 8 inches (200 mm in diameter) or larger, preferably 12 inches (300 mm in diameter) or larger. It is worth noting that the shape of the wafer is not limited to a circle, and may be, for example, a square or rectangular shape. In the case of a square wafer, from the perspective of improving batch processing efficiency, the length of the longest side of the wafer 11 is preferably greater than the above-mentioned size (diameter).

[0107] The thickness of the wafer 11 is not particularly limited, but from the perspective of easily suppressing the bending caused by shrinkage during the curing of the first curable resin (x1) and suppressing the amount of grinding of the back side 11b of the wafer 11 in the subsequent process to shorten the hours required for back grinding, it is preferably 100μm to 1,000μm, more preferably 200μm to 900μm, and even more preferably 300μm to 800μm.

[0108] As predetermined dividing lines when singulating the wafer 10 for producing semiconductor chips, a plurality of grooves 13c are formed in a grid pattern on the bump forming surface 11a of the wafer 10 for producing semiconductor chips prepared in step (S1). The plurality of grooves 13 are grooves formed when the Dicing Before Grinding method is applied, and are formed to a depth shallower than the thickness of the wafer 11, and the deepest part of the groove 13 does not reach the back side 11b of the wafer 11. The plurality of grooves 13 can be formed by cutting using an existing well-known wafer cutting device equipped with a cutting knife. It is worth noting that the plurality of grooves 13 can also be formed by cutting using a laser or the like instead of a knife.

[0109] It is worth noting that the plurality of grooves 13 need not necessarily be formed into the size and shape required by the semiconductor chip to be manufactured. Figure 2 The size of the semiconductor chip is generally about 0.5 mm x 0.5 mm to 1.0 mm x 1.0 mm, but this size is not limited.

[0110] From the viewpoint of improving embedding properties of the first curable resin (x1), the width of the groove 13 is preferably 10 μm to 2,000 μm, more preferably 50 μm to 1,000 μm, further preferably 100 μm to 500 μm, and most preferably 100 μm to 300 μm.

[0111] The depth of the groove 13 is adjusted according to the thickness of the wafer used and the required chip thickness, and is preferably 30 μm to 700 μm, more preferably 60 μm to 600 μm, and even more preferably 100 μm to 500 μm.

[0112] The semiconductor chip manufacturing wafer 10 prepared in step ( S1 ) is supplied to step ( S2 ).

[0113] [Step (S2)]

[0114] The outline of step (S2) is as follows Figure 4 shown.

[0115] In step ( S2 ), the first curable resin ( x1 ) is pressed and attached to the bump formation surface 11 a of the wafer 10 for semiconductor chip fabrication.

[0116] Here, from the viewpoint of the handleability of the first curable resin (x1), it is preferred to use the first curable resin (x1) and the first supporting sheet (Y1) in a laminated manner.

[0117] Therefore, in step (S2), it is preferred that the first stack (α1) having a stacked structure of a layer (X1) of a stacked first support sheet (Y1) and a first curable resin (x1) is pressed and attached to the bump forming surface 11a of the wafer 10 for manufacturing a semiconductor chip with the layer (X1) as the attachment surface.

[0118] Through step (S2), Figure 4 As shown, the bump formation surface 11 a of the semiconductor chip manufacturing wafer 10 is covered with the first curable resin ( x1 ), and the first curable resin ( x1 ) is embedded in the groove portion 13 formed in the semiconductor chip manufacturing wafer 10 .

[0119] By embedding the first curable resin (x1) in the grooves 13 formed in the semiconductor chip fabrication wafer 10, it is possible to cover the portions that will become the side surfaces of the semiconductor chips when the semiconductor chip fabrication wafer 10 is singulated with the first curable resin (x1) in step (S4). Specifically, step (S2) forms a covering that is a precursor of the first curable resin film (r1) that covers the side surfaces of the semiconductor chips, which is necessary to provide superior strength to the semiconductor chips and prevent the first curable resin film (r1) from falling off as a protective film.

[0120] It is worth noting that, from the perspective of improving the embedding property of the first curable resin (x1) into the groove portion 13, the pressing pressure when the first stack (α1) is attached to the wafer 10 for semiconductor chip production is preferably 1 kPa to 200 kPa, more preferably 5 kPa to 150 kPa, and even more preferably 10 kPa to 100 kPa.

[0121] It is worth noting that the pressing force applied when attaching the first laminate (α1) to the semiconductor chip fabrication wafer 10 can be appropriately varied from the initial attachment to the final attachment. For example, from the perspective of further improving the embedding properties of the first curable resin (x1) into the groove 13, it is preferable to keep the pressing force low at the initial attachment and then gradually increase it.

[0122] In addition, when the first stack (α1) is attached to the wafer 10 for semiconductor chip production, if the first curable resin (x1) is a thermosetting resin, it is preferably heated from the perspective of further improving the embedding property of the first curable resin (x1) into the groove portion 13. In the case where the first curable resin (x1) is a thermosetting resin, the first curable resin (x1) temporarily increases in fluidity due to heating, and is cured by continuous heating. Therefore, by heating within a range that increases the fluidity of the first curable resin (x1), the first curable resin (x1) easily flows to the entire groove portion 13, thereby further improving the embedding property of the first curable resin (x1) into the groove portion 13.

[0123] The specific heating temperature (applying temperature) is preferably 50°C to 150°C, more preferably 60°C to 130°C, and even more preferably 70°C to 110°C.

[0124] It should be noted that the heat treatment performed on the first curable resin (x1) is not included in the curing treatment of the first curable resin (x1).

[0125] Furthermore, when attaching the first laminate (α1) to the semiconductor chip fabrication wafer 10, it is preferably done under a reduced pressure environment. This creates a negative pressure in the groove 13, making it easier for the first curable resin (x1) to flow throughout the groove 13. This further improves the embedding properties of the first curable resin (x1) into the groove 13. The specific pressure of the reduced pressure environment is preferably 0.001 kPa to 50 kPa, more preferably 0.01 kPa to 5 kPa, and even more preferably 0.05 kPa to 1 kPa.

[0126] Furthermore, from the viewpoint of further improving the embedding properties of the first curable resin (x1) into the groove portion 13, the thickness of the layer (X1) of the first curable resin (x1) in the first laminate (α1) is preferably 10 μm or more, more preferably 20 μm or more, even more preferably 30 μm or more, and most preferably more than 30 μm. Furthermore, the thickness is preferably 200 μm or less, more preferably 150 μm or less, even more preferably 130 μm or less, even more preferably 100 μm or less, and most preferably 80 μm or less.

[0127] Here, the so-called "thickness of the layer (X1) of the first curable resin (x1)" refers to the thickness of the entire layer (X1). For example, the so-called thickness of the layer (X1) composed of multiple layers refers to the total thickness of all layers constituting the layer (X1).

[0128] In addition, from the viewpoint of further improving the embedding property of the first curable resin (x1) into the groove portion 13, the shear modulus G' of the layer (X1) of the first curable resin (x1) is preferably 5.0×10-1.0×10 Pa when the shear modulus G' of the test piece of the layer (X1) is measured by strain dispersion measurement under the conditions of a temperature of 90° C. and a frequency of 1 Hz, while causing a strain of 400%. 6 Pa, more preferably 1.0×10 2 Pa~1.0×10 5 Pa, and preferably 1.0×10 2 Pa~1.0×10 4 Pa.

[0129] It should be noted that the shear modulus G′ of the layer ( X1 ) of the first curable resin ( x1 ) is a value measured before curing the first curable resin ( x1 ).

[0130] It should be noted that the shear modulus G' can be adjusted by adjusting the composition of the first curable resin (x1) or the like.

[0131] Here, the first supporting sheet (Y1) included in the first laminate (α1) preferably supports the first curable resin (x1) and also functions as a back grinding sheet.

[0132] In this case, when the back surface 11b of the wafer 11 is ground with the first stack (α1) attached, the first support sheet (Y1) can function as a back surface grinding sheet, making the back surface grinding process easier to perform.

[0133] [Step (S3), Step (S4), and Step (S-BG)]

[0134] Through the above steps up to the step (S2), a stacked body is formed by attaching the first stacked body (α1) to the semiconductor chip manufacturing wafer 10. This stacked body is preferably supplied to the relevant steps of any of the first to fourth embodiments described below, depending on the timing of the step (S-BG).

[0135] Hereinafter, regarding the first to fourth embodiments, the description of the timing of performing the step (S-BG) will be added, and the step (S3) and the step (S4) will be described.

[0136] <First embodiment>

[0137] like Figure 1 As shown, in the first embodiment, step (S-BG) is performed after step (S2) and before step (S3).

[0138] Figure 5 A schematic diagram relating to a first embodiment is shown.

[0139] (First embodiment: step (S-BG))

[0140] In the first embodiment, the step (S-BG) is first performed. Specifically, Figure 5 As shown in (1-a), the back surface 11b of the wafer 10 for manufacturing a semiconductor chip is ground in a state where the first stacked body (α1) is attached. Figure 5 The "BG" in the figure refers to back grinding, which is also the same in the following figures. Figure 5 As shown in (1-b), the first supporting sheet (Y1) is peeled off from the first laminate (α1).

[0141] The grinding amount when grinding the back side 11b of the semiconductor chip manufacturing wafer 10 only needs to be enough to expose at least the bottom of the groove 13 of the semiconductor chip manufacturing wafer 10. It can also be further ground to grind the first curable resin (x1) embedded in the groove 13 while grinding the semiconductor chip manufacturing wafer 10.

[0142] In the first embodiment, the first support sheet (Y1) is peeled off before the step (S3) is performed. Therefore, even if the first curable resin (x1) is a thermosetting resin, when a heat treatment is performed for curing in the step (S3), the first support sheet (Y1) is not required to have heat resistance. Therefore, the design freedom of the first support sheet (Y1) is improved.

[0143] (First embodiment: step (S3))

[0144] After the step (S-BG) is performed, the step (S3) is performed. Specifically, Figure 5 As shown in (1-c), the first curable resin (x1) is cured to obtain a wafer 10 for producing a semiconductor chip with a first cured resin film (r1).

[0145] The first cured resin film (r1) formed by curing the first curable resin (x1) is stronger than the first curable resin (x1) at room temperature. Therefore, by forming the first cured resin film (r1), the bump neck is well protected. Figure 5 In step (S4) shown in (1-d), by singulating the semiconductor chip manufacturing wafer 10 with the first cured resin film (r1), it is possible to obtain semiconductor chips having excellent strength and having their side surfaces also covered by the first cured resin film (r1). Furthermore, the first cured resin film (r1) serving as a protective film is also prevented from falling off.

[0146] (First embodiment: Curing method)

[0147] The curing of the first curable resin (x1) can be performed by either thermal curing or curing by energy ray irradiation, depending on the type of the curable component contained in the first curable resin (x1).

[0148] It should be noted that in this specification, the so-called "energy rays" refer to rays with energy quanta in electromagnetic waves or charged particle beams, examples of which include ultraviolet rays and electron beams, preferably ultraviolet rays.

[0149] As conditions for heat curing, the curing temperature is preferably 90° C. to 200° C., and the curing time is preferably 1 hour to 3 hours.

[0150] The conditions for curing by energy ray irradiation are appropriately set according to the type of energy ray used. For example, when ultraviolet rays are used, the illuminance is preferably 170 mW / cm 2 ~250mw / cm 2 The light intensity is preferably 300mJ / cm 2 ~3,000mJ / cm 2 .

[0151] Here, in the process of curing the first curable resin (x1) to form the first cured resin film (r1), from the perspective of removing bubbles that have entered when the first curable resin (x1) is embedded in the groove portion 13 in step (S2), the first curable resin (x1) is preferably a thermosetting resin. That is, when the first curable resin (x1) is a thermosetting resin, the fluidity of the first curable resin (x1) is temporarily increased by heating, and it is cured by continuing to heat. By utilizing this phenomenon, when the fluidity of the first curable resin (x1) is increased, bubbles that have entered when the first curable resin (x1) is embedded in the groove portion 13 are removed, thereby being able to maintain the embedding property of the first curable resin (x1) in the groove portion 13 in a better state, and then cure the first curable resin (x1).

[0152] Furthermore, from the viewpoint of shortening the curing time, the first curable resin (x1) is preferably an energy ray curable resin.

[0153] Note that the first curable resin (x1) for forming the first cured resin film (r1) will be described in detail later.

[0154] (First embodiment: step (S4))

[0155] After the step (S3) is performed, the step (S4) is performed. Specifically, Figure 5As shown in (1-d), the portion of the first cured resin film (r1) formed in the groove portion of the semiconductor chip fabrication wafer 10 with the first cured resin film (r1) is cut along the planned dividing line.

[0156] Cutting can be appropriately performed by a conventionally known method such as knife cutting or laser cutting.

[0157] Thus, a semiconductor chip 40 can be obtained in which at least the bump forming surface 11 a and the side surfaces are covered with the first cured resin film ( r1 ).

[0158] The bump forming surface 11a and the side surface of the semiconductor chip 40 are covered by the first cured resin film (r1), and therefore have excellent strength. In addition, the bump forming surface 11a and the side surface are seamlessly and continuously covered by the first cured resin film (r1), so the bonding surface (interface) between the bump forming surface 11a and the first cured resin film (r1) is not exposed on the side surface of the semiconductor chip 40. The exposed portion exposed on the side surface of the semiconductor chip 40 in the bonding surface (interface) between the bump forming surface 11a and the first cured resin film (r1) easily becomes the starting point for film shedding. Since the semiconductor chip 40 of the present invention does not have this exposed portion, the film shedding generated from the exposed portion is unlikely to occur during the process of cutting the semiconductor chip manufacturing wafer 10 to manufacture the semiconductor chip 40 or after manufacturing. Therefore, a semiconductor chip 40 can be obtained in which the shedding of the first cured resin film (r1) as a protective film is suppressed.

[0159] It is worth noting that in step (S4), when the portion of the first cured resin film (r1) formed in the groove of the semiconductor chip fabrication wafer 10 with the first cured resin film (r1) is cut along the predetermined dividing line, the first cured resin film (r1) is preferably transparent. By making the first cured resin film (r1) transparent, the semiconductor wafer 11 is transparent and visible, thereby ensuring the confirmation of the predetermined dividing line. Therefore, it becomes easier to cut along the predetermined dividing line.

[0160] <Second embodiment>

[0161] like Figure 1 As shown, in the second embodiment, step (S-BG) is performed after step (S3) and before step (S4).

[0162] Figure 6 A schematic diagram relating to a second embodiment is shown.

[0163] (Second embodiment: step (S3))

[0164] In the second embodiment, first, step (S3) is performed. Specifically, Figure 6As shown in (2-a), the first curable resin (x1) is cured in a state where the first laminate (α1) is attached, thereby obtaining a wafer 10 for producing a semiconductor chip with a first cured resin film (r1).

[0165] The first cured resin film (r1) formed by curing the first curable resin (x1) is stronger than the first curable resin (x1) at room temperature. Therefore, by forming the first cured resin film (r1), the bump neck is well protected. In addition, by singulating the semiconductor chip manufacturing wafer 10 with the first cured resin film (r1) in step (S4), a semiconductor chip with excellent strength and also covered by the first cured resin film (r1) can be obtained. In addition, it is also possible to prevent the first cured resin film (r1) as a protective film from falling off.

[0166] The curing method is, for example, the same method as the curing method described in the first embodiment.

[0167] By performing the heat curing process without peeling off the first support sheet (Y1), the first support sheet (Y1) can suppress the flow of the surface of the first curable resin (x1) that temporarily occurs when curing the first curable resin (x1), thereby improving the flatness of the first cured resin film (r1) on the bump formation surface. In addition, by curing the first curable resin (x1) before grinding the back surface 11b of the semiconductor chip manufacturing wafer 10, it is possible to suppress the warping of the semiconductor chip manufacturing wafer 10. (Second Embodiment: Step (S-BG))

[0168] After the step (S3) is carried out, the step (S-BG) is carried out. Figure 6 As shown in (2-b), the back surface 11b of the wafer 10 for semiconductor chip production is ground in a state where the first stacked body (α1) is attached.

[0169] It is worth noting that the grinding amount when grinding the back side 11b of the semiconductor chip manufacturing wafer 10 only needs to be enough to expose at least the bottom of the groove 13 of the semiconductor chip manufacturing wafer 10, but it can also be further ground to grind the first cured resin film (r1) embedded in the groove 13 together with the semiconductor chip manufacturing wafer 10.

[0170] Then, if Figure 6 As shown in (2-c), the first supporting sheet (Y1) is peeled off from the first laminate (α1).

[0171] (Second embodiment: step (S4))

[0172] After the step (S-BG) is performed, the step (S4) is performed in the same manner as in the first embodiment. Figure 6As shown in (2-d), the portion of the first cured resin film (r1) formed in the groove portion of the semiconductor chip fabrication wafer 10 with the first cured resin film (r1) is cut along the planned dividing line.

[0173] Cutting can be appropriately performed by a conventionally known method such as knife cutting or laser cutting.

[0174] Thus, a semiconductor chip 40 can be obtained in which at least the bump forming surface 11 a and the side surfaces are covered with the first cured resin film ( r1 ).

[0175] The bump forming surface 11a and side surfaces of the semiconductor chip 40 are covered with the first cured resin film (r1), thus having excellent strength. In addition, for the above reasons, the semiconductor chip 40 can be obtained in which the first cured resin film (r1) as a protective film is prevented from falling off.

[0176] <Third embodiment>

[0177] like Figure 1 As shown, the third embodiment is similar to the second embodiment in that the step (S-BG) is performed after the step (S3) and before the step (S4). However, the third embodiment differs from the second embodiment in that a back grinding sheet (b-BG) is used separately.

[0178] Figure 7 A schematic diagram relating to a third embodiment is shown.

[0179] (Third embodiment: step (S3))

[0180] In the third embodiment, first, step (S3) is performed, but before that, as shown in FIG. Figure 7 As shown in (3-a), the first supporting sheet (Y1) is peeled off from the first laminate (α1). On this basis, step (S3) is implemented. Specifically, as Figure 7 As shown in (3-b), the first curable resin (x1) is cured to obtain a wafer 10 for producing a semiconductor chip with a first cured resin film (r1).

[0181] The curing method is, for example, the same method as the curing method described in the first embodiment.

[0182] Since the first support sheet (Y1) is peeled off before the step (S3) is performed, even if the first curable resin (x1) is a thermosetting resin, the first support sheet (Y1) is not required to have heat resistance when a heat treatment is performed for curing in the step (S3). Therefore, the design freedom of the first support sheet (Y1) is improved.

[0183] Furthermore, by curing the first curable resin ( x1 ) before grinding the back surface 11 b of the semiconductor chip manufacturing wafer 10 , warping of the semiconductor chip manufacturing wafer 10 can be suppressed.

[0184] (Third Embodiment: Step (S-BG))

[0185] After the step (S3) is performed, the step (S-BG) is performed. Specifically, Figure 7 As shown in (3-c), the back grinding sheet (b-BG) is attached to the surface of the first cured resin film (r1) of the semiconductor chip manufacturing wafer 10 with the first cured resin film (r1). Figure 7 As shown in (3-d), after grinding the back surface 11b of the semiconductor chip manufacturing wafer 10 with the back surface grinding sheet (b-BG) attached, as shown in Figure 7 As shown in (3-e), the back grinding sheet (b-BG) is peeled off from the wafer 10 for semiconductor chip production with the first cured resin film (r1).

[0186] Since the back grinding sheet (b-BG) is not used in step (S3), even if the first curable resin (x1) is a thermosetting resin, the back grinding sheet (b-BG) is not required to have heat resistance when a heat treatment is performed for curing in step (S3). Therefore, the design freedom of the back grinding sheet (b-BG) is increased.

[0187] It is worth noting that the grinding amount when grinding the back side 11b of the semiconductor chip manufacturing wafer 10 only needs to be enough to expose at least the bottom of the groove 13 of the semiconductor chip manufacturing wafer 10. It can also be further ground to grind the first curable resin (r1) embedded in the groove 13 while grinding the semiconductor chip manufacturing wafer 10.

[0188] (Third embodiment: step (S4))

[0189] After the step (S-BG) is performed, the step (S4) is performed in the same manner as in the first embodiment and the second embodiment. Figure 7 As shown in (3-f), the portion of the first cured resin film (r1) formed in the groove portion of the semiconductor chip fabrication wafer 10 with the first cured resin film (r1) is cut along the planned dividing line.

[0190] Cutting can be appropriately performed by a conventionally known method such as knife cutting or laser cutting.

[0191] Thus, a semiconductor chip 40 can be obtained in which at least the bump forming surface 11 a and the side surfaces are covered with the first cured resin film ( r1 ).

[0192] The bump forming surface 11a and side surfaces of the semiconductor chip 40 are covered with the first cured resin film (r1), thus having excellent strength. In addition, for the reasons described above, the semiconductor chip 40 can be obtained in which the first cured resin film (r1) as a protective film is prevented from falling off.

[0193] <Fourth embodiment>

[0194] like Figure 1 As shown, in the fourth embodiment, the step (S-BG) is performed in the step (S4).

[0195] Figure 8 A schematic diagram relating to a fourth embodiment is shown.

[0196] (Fourth embodiment: step (S3))

[0197] In the fourth embodiment, first, step (S3) is performed, but before that, as shown in FIG. Figure 8 As shown in (4-a), the first supporting sheet (Y1) is peeled off from the first laminate (α1). On this basis, step (S3) is implemented. Specifically, as Figure 8 As shown in (4-b), the first curable resin (x1) is cured to obtain a wafer 10 for semiconductor chip production with a first cured resin film (r1).

[0198] The curing method is, for example, the same method as the curing method described in the first embodiment.

[0199] Therefore, even if the first curable resin (x1) is a thermosetting resin, when heat treatment is performed for curing in step (S3), the first support sheet (Y1) is not required to have heat resistance. Therefore, the design freedom of the first support sheet (Y1) is improved.

[0200] Furthermore, by curing the first curable resin (x1) before grinding the back surface 11b of the semiconductor chip manufacturing wafer 10, warping of the semiconductor chip manufacturing wafer 10 can be suppressed.

[0201] (Fourth embodiment: Step (S4) including step (S-BG))

[0202] After the step (S3) is implemented, Figure 8 As shown in (4-c), a cut is formed along the predetermined dividing line in the portion of the first cured resin film (r1) formed in the groove portion of the wafer for manufacturing semiconductor chips with the first cured resin film (r1). The depth of the cut is preferably a depth that reaches the deepest part of the groove portion 13 from the perspective of ease of singulation. Thus, in the step (S-BG) described later, the wafer 10 for manufacturing semiconductor chips with the first cured resin film (r1) along the cut is singulated.

[0203] Alternatively, although not shown in the figure, a modified region may be formed along the predetermined dividing line in the portion of the groove 13 formed in the first cured resin film (r1) of the semiconductor chip manufacturing wafer 10 with the first cured resin film (r1). The modified region can be formed by laser or plasma processing, etc. Thus, in the step (S-BG) described later, a crack is generated starting from the modified region, and the semiconductor chip manufacturing wafer 10 with the first cured resin film (r1) along the modified region is singulated.

[0204] Next, the step (S-BG) is performed. Specifically, Figure 8 As shown in (4-d), a back grinding sheet (b-BG) is attached to the surface of the first cured resin film (r1) of the semiconductor chip manufacturing wafer 10 with the first cured resin film (r1). Figure 8 As shown in (4-e), the back surface 11b of the semiconductor chip manufacturing wafer 10 is ground with the back surface grinding sheet (b-BG) attached. Figure 8 As shown in (4-f), the back grinding sheet (b-BG) is peeled off from the wafer 10 for semiconductor chip production with the first cured resin film (r1).

[0205] Thus, a semiconductor chip 40 can be obtained in which at least the bump forming surface 11 a and the side surfaces are covered with the first cured resin film ( r1 ).

[0206] It is worth noting that the grinding amount when grinding the back side 11b of the semiconductor chip manufacturing wafer 10 only needs to be enough to expose at least the bottom of the groove 13 of the semiconductor chip manufacturing wafer 10. It can also be further ground to grind the first curable resin (r1) embedded in the groove 13 while grinding the semiconductor chip manufacturing wafer 10.

[0207] The bump forming surface 11 a and the side surfaces of the semiconductor chip 40 are covered with the first cured resin film ( r1 ), and thus have excellent strength.

[0208] It is noteworthy that the back grinding sheet (b-BG) is not used in step (S3). Therefore, even if the first curable resin (x1) is a thermosetting resin, the back grinding sheet (b-BG) is not required to have heat resistance when a heat treatment is performed for curing in step (S3). Therefore, the design freedom of the back grinding sheet (b-BG) is increased.

[0209] Here, in the first to fourth embodiments, examples of methods of using the first support sheet (Y1) or the back grinding sheet (b-BG) in the process (S-BG) are described. In one embodiment of the present invention, a resin layer (Z1) for back grinding can also be formed instead of the first support sheet (Y1) or the back grinding sheet (b-BG).

[0210] Specifically, by using a fluid resin (z1), covering the surface of the first cured resin film (r1) and the bumps exposed from the first cured resin film (r1), the resin (z1) is cured to form a resin layer (Z1) for back grinding, thereby enabling the grinding process to be performed as a substitute for the back grinding sheet.

[0211] It is noteworthy that when the surface of the first cured resin film (r1) and the bumps exposed from the first cured resin film (r1) are covered with resin (z1), by covering them with a resin film (z2) that can conform to the bumps and has flexibility, the resin layer (Z1) for back grinding that becomes unnecessary after the process (S-BG) can be easily peeled off.

[0212] [Process (T)]

[0213] In one embodiment of the method for manufacturing a semiconductor chip of the present invention, it is preferable to further include the following step (T).

[0214] Step (T): a step of forming a second cured resin film (r2) on the back surface of the semiconductor chip fabrication wafer.

[0215] According to the manufacturing method of the above embodiment, a semiconductor chip 40 can be obtained in which at least the bump-forming surface 11a and the side surfaces are covered with the first cured resin film (r1). However, the back surface of the semiconductor chip 40 is exposed. Therefore, from the perspective of protecting the back surface of the semiconductor chip 40 and further improving the strength of the semiconductor chip 40, it is preferable to perform the above step (T).

[0216] More specifically, the step (T) preferably includes the following steps (T1) to (T2) in this order.

[0217] Step (T1): A step of applying a second curable resin (x2) to the back surface of a wafer for semiconductor chip production.

[0218] Step (T2): a step of curing the second curable resin (x2) to form a second curable resin film (r2).

[0219] In addition, in step (T1), it is preferred to use a second laminate (α2) having a laminated structure in which a second support sheet (Y2) and a layer (X2) of a second curable resin (x2) are laminated. Specifically, step (T1) is preferably a step of attaching the second laminate (α2) having a laminated structure in which a second support sheet (Y2) and a layer (X2) of a second curable resin (x2) are laminated to the back surface of a wafer for producing a semiconductor chip, with the layer (X2) being the attaching surface.

[0220] In this case, the second supporting sheet (Y2) may be peeled off from the second laminate (α2) between the step (T1) and the step (T2) or after the step (T2).

[0221] Here, when the second laminate (α2) is used in step (T1), the second supporting sheet (Y2) included in the second laminate (α2) preferably supports the second curable resin (x2) and also functions as a dicing sheet.

[0222] In the manufacturing methods of the first to third embodiments, by attaching the second stack (α2) to the back side 11b of the semiconductor wafer 10 with the first cured resin film (r1) in step (S4), the second support sheet (Y2) can function as a cutting sheet when singulation is performed by cutting, thereby making cutting easier to implement.

[0223] Here, as in the manufacturing method of the first embodiment, when step (S3) is performed after step (S-BG), the above-mentioned step (T1) can be performed before step (S3), and then step (S3) and step (T2) can be performed simultaneously. That is, the first curable resin (x1) and the second curable resin (x2) can be cured simultaneously. This can reduce the number of curing treatments.

[0224] Specifically, in the production methods of the first to third embodiments, step (T) includes the following step (T1-1) and the following step (T1-2) in this order.

[0225] Step (T1-1): After step (S-BG) and before step (S4), a second curable resin (x2) is applied to the back surface of the wafer for semiconductor chip production.

[0226] Step (T1-2): Before or after step (S4), a step of curing the second curable resin (x2) to form a second cured resin film (r2).

[0227] In step (S4), when the portion formed in the groove portion of the first cured resin film (r1) of the wafer for manufacturing a semiconductor chip with the first cured resin film (r1) is cut along the predetermined dividing line, it is preferred to cut the second curable resin (x2) and the second cured resin film (r2) together.

[0228] In the production method of the fourth embodiment, step (T) includes the following step (T2-1) and the following step (T2-2) in this order.

[0229] Step (T2-1): After step (S-BG) and after step (S4), a second curable resin (x2) is applied to the back surface of the semiconductor chip fabrication wafer with the back grinding sheet (b-BG) applied thereto.

[0230] Step (T2-2): a step of curing the second curable resin (x2) to form a second cured resin film (r2).

[0231] Furthermore, step (T) preferably includes the following step (T2-3) before or after step (T2-2):

[0232] Step (T2-3): A step of dividing the second curable resin layer (x2) and the second cured resin film (r2) along the cut lines.

[0233] [Process (U)]

[0234] One embodiment of the method for manufacturing a semiconductor chip of the present invention may further include the following step (U).

[0235] Step (U): a step of removing the first cured resin film (r1) covering the top of the bump or the first cured resin film (r1) adhering to a portion of the top of the bump to expose the top of the bump.

[0236] As the exposure process for exposing the top of the bump, there is an etching process such as a wet etching process or a dry etching process, for example.

[0237] Here, as dry etching processing, there is plasma etching processing, etc., for example.

[0238] Note that, in the case where the top of the bump is not exposed on the surface of the protective film, the exposure process may be performed by retreating the protective film until the top of the bump is exposed.

[0239] The timing of implementing step (U) is not particularly limited as long as it is in a state where the first cured resin film (r1) is exposed, but it is preferably after step (S3) and before step (S4) in a state where the first support sheet (Y1) and the back grinding sheet (b-BG) are not attached.

[0240] Next, the first stack (α1) used in the method for manufacturing a semiconductor chip according to one embodiment of the present invention is described. Furthermore, the back grinding sheet (b-BG) and the second stack (α2) used in the method for manufacturing a semiconductor chip according to one embodiment of the present invention are also described.

[0241] [Structure of the First Laminated Body (α1)]

[0242] The structure of the first laminate (α1) used in the production method of one embodiment of the present invention is, for example, Figure 9 shown.

[0243] The first laminate (α1) used in the production method of one embodiment of the present invention is as follows Figure 9 The first laminate (α1) shown has a layer (X1) of a first curable resin (x1) on one surface of a first support sheet (Y1). By having the layer (X1) of the first curable resin (x1) on one surface of the first support sheet (Y1), the layer (X1) of the first curable resin (x1) can be stably supported and protected when the layer (X1) of the first curable resin (x1) is transported as a product package or when the layer (X1) of the first curable resin (x1) is transported within a process.

[0244] In addition, the specific structure of the first stack (α1) is, for example, Figures 10 to 12 shown.

[0245] The first stack (α1) is as follows Figure 10 In the first laminate (α1a) shown, the first supporting sheet (Y1) is a substrate 51, and a layer (X1) of a first curable resin (x1) is provided on one surface of the substrate 51.

[0246] In addition, regarding the first stack (α1), as Figure 11 In the first laminate (α1b) shown, the first support sheet (Y1) is an adhesive sheet formed by laminating a base material 51 and an adhesive layer 61, and the adhesive layer 61 of the adhesive sheet and the layer (X1) of the first curable resin (x1) can be bonded together.

[0247] Furthermore, regarding the first stacked body (α1), as Figure 12 In the first laminate (α1c) shown, the first support sheet (Y1) is an adhesive sheet in which a base material 51, an intermediate layer 71, and an adhesive layer 61 are sequentially stacked. The adhesive layer 61 of the adhesive sheet and the layer (X1) of the first curable resin (x1) can be bonded together. The adhesive sheet in which a base material 51, an intermediate layer 71, and an adhesive layer 61 are sequentially stacked can be suitably used as a back grinding tape. That is, as Figure 12The first stack (α1c) shown has a back grinding tape as a first supporting sheet (Y1), so it can be appropriately used when grinding the back side of the semiconductor chip manufacturing wafer for thinning after bonding the layer (X1) of the first curable resin (x1) of the first stack (α1c) and the bump forming surface of the semiconductor chip manufacturing wafer.

[0248] Hereinafter, the first curable resin (x1) and the first supporting sheet (Y1) used for the first laminate (α1) will be described.

[0249] <First curable resin (x1)>

[0250] The first curable resin (x1) is a film-like resin used to cover the bump-forming surface of the semiconductor chip manufacturing wafer and to fill the grooves formed in the semiconductor chip manufacturing wafer. It is cured by heating or energy ray irradiation to form a first cured resin film (r1). Specifically, the first curable resin (x1) may be a thermosetting resin film that is cured by heating (hereinafter referred to as the "first thermosetting resin film (x1-1)") or an energy ray-curable resin film that is cured by energy ray irradiation (hereinafter referred to as the "first energy ray-curable resin film (x1-2)").

[0251] The physical properties of the first curable resin (x1) can be adjusted by adjusting either or both of the types and amounts of the components contained in the first curable resin (x1).

[0252] Hereinafter, the first thermosetting resin film (x1-1) and the first energy ray-curable resin film (x1-2) will be described.

[0253] <<First thermosetting resin film (x1-1)>>

[0254] The first thermosetting resin film (x1-1) contains a polymer component (A) and a thermosetting component (B).

[0255] The first thermosetting resin film (x1-1) is formed of, for example, a first thermosetting resin composition (x1-1-1) containing a polymer component (A) and a thermosetting component (B).

[0256] The polymer component (A) is considered to be formed by a polymerization reaction of a polymerizable compound. Furthermore, the thermosetting component (B) is a component that can undergo a curing (polymerization) reaction triggered by heat. It is important to note that this curing (polymerization) reaction also includes a condensation reaction.

[0257] It is noteworthy that in the following description of this specification, "the content of each component in the total amount of effective ingredients of the first thermosetting resin composition (x1-1-1)" is synonymous with "the content of each component of the first thermosetting resin film (x1-1) formed by the first thermosetting resin composition (x1-1-1)".

[0258] (Polymer component (A))

[0259] The first thermosetting resin film (x1-1) and the first thermosetting resin composition (x1-1-1) contain a polymer component (A).

[0260] The polymer component (A) is a polymer compound for imparting film-forming properties and flexibility to the first thermosetting resin film (x1-1). One polymer component (A) may be used alone or in combination of two or more. When two or more polymer components (A) are used in combination, the combination and ratio may be arbitrarily selected.

[0261] Examples of the polymer component (A) include acrylic resins (resins having a (meth)acryloyl group), polyvinyl acetal, polyester fibers, urethane resins (resins having a urethane bond), acrylurethane resins, silicone resins (resins having a siloxane bond), rubber resins (resins having a rubber structure), phenoxy resins, and thermosetting polyimides.

[0262] Among these, acrylic resins and polyvinyl acetal are preferred.

[0263] Examples of the propylene-based resin include well-known propylene polymers.

[0264] From the viewpoint of more easily exhibiting the effects of the present invention, the weight average molecular weight (Mw) of the propylene resin is preferably 10,000 to 2,000,000, more preferably 300,000 to 1,500,000, and even more preferably 500,000 to 1,000,000.

[0265] By making the weight average molecular weight of the propylene resin greater than the above-mentioned lower limit, it is easy to improve the shape stability (time stability during storage) of the first thermosetting resin film (x1-1). In addition, by making the weight average molecular weight of the propylene resin less than the above-mentioned upper limit, the first thermosetting resin film (x1-1) becomes easy to conform to the concave and convex surface of the adherend. For example, it is easy to suppress the generation of vacuum between the adherend and the first thermosetting resin film (x1-1). Therefore, it is needless to say that the coverage of the bump forming surface 11a of the semiconductor wafer 11 is easy to improve the embedding property into the groove portion 13.

[0266] From the viewpoint of more easily exhibiting the effects of the present invention, the glass transition temperature (Tg) of the propylene resin is preferably -60 to 70°C, more preferably -40 to 50°C, and even more preferably -30 to 30°C.

[0267] When the glass transition temperature (Tg) of the propylene resin is above the aforementioned lower limit, the adhesive force between the first cured resin film (r1) and the first support sheet (Y1) is suppressed, thereby improving the releasability of the first support sheet (Y1). Furthermore, when the glass transition temperature (Tg) of the propylene resin is below the aforementioned upper limit, the adhesive force with the first thermosetting resin film (x1-1) and the adherend of the first cured resin film (r1) is improved. Therefore, it is possible to further easily suppress the peeling of the first cured resin film (r1) as a protective film.

[0268] Examples of acrylic resins include polymers of one or more (meth)acrylates; and copolymers of two or more monomers selected from (meth)acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, and N-methylolacrylamide.

[0269] Examples of the (meth)acrylates constituting the acrylic resin include (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, n-butyl (meth)acrylate, isobutyl (meth)acrylate, sec-butyl (meth)acrylate, tert-butyl (meth)acrylate, pentyl (meth)acrylate, ethyl (meth)acrylate, heptyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, n-octyl (meth)acrylate, n-nonyl (meth)acrylate, isobutyl (meth)acrylate, and tert-butyl (meth)acrylate. Alkyl (meth)acrylates having a chain structure in which the alkyl group constituting the alkyl ester has 1 to 18 carbon atoms, such as nonyl (meth)acrylate, decyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate (lauryl (meth)acrylate), tridecyl (meth)acrylate, tetradecyl (meth)acrylate (myristyl (meth)acrylate), pentadecyl (meth)acrylate, hexadecyl (meth)acrylate (palmityl (meth)acrylate), heptadecyl (meth)acrylate, and octadecyl (meth)acrylate (octadecyl (meth)acrylate);

[0270] Cycloalkyl (meth)acrylates such as isobornyl (meth)acrylate and dicyclopentyl (meth)acrylate;

[0271] Aralkyl (meth)acrylates such as benzyl (meth)acrylate;

[0272] Cycloalkenyl (meth)acrylates such as dicyclopentenyl (meth)acrylate;

[0273] Cycloalkenyloxyalkyl (meth)acrylates such as dicyclopentenyloxyethyl (meth)acrylate (meth)acrylate imide;

[0274] (Meth)acrylates containing a glycidyl group, such as glycidyl (meth)acrylate;

[0275] (Meth)acrylates containing a hydroxyl group, such as hydroxymethyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, 3-hydroxybutyl (meth)acrylate, and 4-hydroxybutyl (meth)acrylate;

[0276] (Meth)acrylates containing a substituted amino group, such as N-aminoethyl (meth)acrylate, and the like.

[0277] In this specification, the term "substituted amino group" refers to a group in which one or two hydrogen atoms of an amino group are replaced by a group other than a hydrogen atom.

[0278] Among these, from the viewpoint of further facilitating the effects of the present invention, the alkyl group constituting the alkyl ester is preferably a copolymer of a combination of a chain-structured (meth)acrylic acid alkyl ester having 1 to 18 carbon atoms, a glycidyl group-containing (meth)acrylic acid ester, and a hydroxyl group-containing (meth)acrylic acid ester. The alkyl group constituting the alkyl ester is more preferably a copolymer of a combination of a chain-structured (meth)acrylic acid alkyl ester having 1 to 4 carbon atoms, a glycidyl group-containing (meth)acrylic acid ester, and a hydroxyl group-containing (meth)acrylic acid ester. Still more preferably, it is a copolymer of a combination of butyl acrylate, acrylic acid ester, glycidyl acrylate, and 2-hydroxyethyl acrylate.

[0279] The acrylic resin may be obtained by copolymerizing one or more monomers selected from (meth)acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, N-methylolacrylamide, etc., in addition to (meth)acrylate.

[0280] The monomers constituting the propylene resin may be a single species or two or more species. When the monomers constituting the propylene resin are two or more species, the combination and ratio thereof can be arbitrarily selected.

[0281] The acrylic resin may have a functional group capable of bonding with other compounds, such as a vinyl group, a (meth)acryloyl group, an amino group, a hydroxyl group, a carboxyl group, and an isocyanate group.

[0282] The functional groups of the propylene resin may be bonded to other compounds via a crosslinking agent (F) described below, or may be bonded directly to other compounds without the crosslinking agent (F). Bonding the propylene resin to other compounds via the functional groups tends to improve the reliability of a package obtained using the first thermosetting resin film (x1-1).

[0283] The polyvinyl acetal in the polymer component (A) may be, for example, a known one.

[0284] Among these, preferred polyvinyl acetals include polyvinyl formal and polyvinyl butyral, and polyvinyl butyral is more preferred.

[0285] Examples of polyvinyl butyral include those having structural units represented by the following formulae (i)-1, (i)-2, and (i)-3.

[0286] [Chemical Formula 1]

[0287]

[0288] (wherein l, m, and n are each independently an integer greater than 1.)

[0289] The weight average molecular weight (Mw) of polyvinyl acetal is preferably 5,000 to 200,000, more preferably 8,000 to 100,000. By having the weight average molecular weight of polyvinyl acetal be above the above lower limit, it is easy to improve the shape stability (time stability during storage) of the first thermosetting resin film (x1-1). In addition, by having the weight average molecular weight of polyvinyl acetal be below the above upper limit, the first thermosetting resin film (x1-1) becomes easy to conform to the concave and convex surface of the adherend, for example, it is easy to suppress the generation of vacuum between the adherend and the first thermosetting resin film (x1-1). Therefore, it is needless to say that the coverage of the bump forming surface 11a of the semiconductor wafer 11 is easy to improve the embedding property into the groove portion 13.

[0290] The glass transition temperature (Tg) of polyvinyl acetal is preferably 40 to 80°C, more preferably 50 to 70°C. When the Tg of polyvinyl acetal is above the above lower limit, the adhesive force between the first cured resin film (r1) and the first support sheet (Y1) is suppressed, and the peelability of the first support sheet (Y1) is improved. In addition, when the Tg of polyvinyl acetal is below the above upper limit, the adhesive force with the first thermosetting resin film (x1-1) and the adherend of the first cured resin film (r1) is improved. Therefore, it is possible to further easily suppress the film peeling of the first cured resin film (r1) as a protective film.

[0291] The ratio of three or more monomers constituting polyvinyl acetal can be arbitrarily selected.

[0292] Here, in one embodiment of the present invention, as the polymer component (A), instead of using both propylene resin and polyvinyl acetal, a thermoplastic resin other than propylene resin and polyvinyl acetal (hereinafter sometimes referred to as "thermoplastic resin") may be used alone, or one or both of propylene resin and polyvinyl acetal may be used in combination.

[0293] By using a thermoplastic resin, the first cured resin film (r1) is more easily releasable from the first support sheet (Y1), and the first thermosetting resin film (x1-1) can more easily conform to the uneven surface of the adherend, further suppressing the formation of a vacuum between the adherend and the first thermosetting resin film (x1-1). Therefore, the coverage of the bump-forming surface 11a of the semiconductor wafer 11 is improved, and the embedding property of the bump-forming surface 11a in the groove 13 is also improved.

[0294] The weight average molecular weight of the thermoplastic resin is preferably 1,000 to 100,000, more preferably 3,000 to 80,000.

[0295] The glass transition temperature (Tg) of the thermoplastic resin is preferably -30 to 150°C, more preferably -20 to 120°C.

[0296] Examples of the thermoplastic resin include polyester, polyurethane, phenoxy resin, polybutene, polybutadiene, and polystyrene.

[0297] Thermoplastic resins may be used alone or in combination of two or more. When two or more thermoplastic resins are used, the combination and ratio thereof may be arbitrarily selected.

[0298] The content of the polymer component (A) is preferably 5 to 85% by mass, more preferably 5 to 80% by mass, based on the total amount of the active ingredients in the first thermosetting resin composition (x1-1-1).

[0299] The polymer component (A) may correspond to the thermosetting component (B). In the present invention, when the first thermosetting resin composition (x1-1-1) contains components corresponding to both the polymer component (A) and the thermosetting component (B), the first thermosetting resin composition (x1-1-1) is deemed to contain both the polymer component (A) and the thermosetting component (B).

[0300] (Thermosetting component (B))

[0301] The first thermosetting resin film (x1-1) and the first thermosetting resin composition (x1-1-1) contain a thermosetting component (B).

[0302] The thermosetting component (B) is a component for curing the first thermosetting resin film (x1-1) to form a hard first cured resin film (r1).

[0303] The thermosetting component (B) may be used alone or in combination of two or more. When two or more thermosetting components (B) are used, the combination and ratio thereof may be arbitrarily selected.

[0304] Examples of the thermosetting component (B) include epoxy-based thermosetting resins, thermosetting polyimides, polyurethanes, unsaturated polyesters, and silicone resins. Among these, epoxy-based thermosetting resins are preferred.

[0305] The epoxy resin-based thermosetting resin is composed of an epoxy resin (B1) and a thermosetting agent (B2).

[0306] The epoxy-based thermosetting resin may be used alone or in combination of two or more. When two or more epoxy-based thermosetting resins are used, the combination and ratio thereof may be arbitrarily selected.

[0307] Epoxy resin (B1)

[0308] The epoxy resin (B1) may be, for example, a well-known one, such as a multifunctional epoxy resin, a biphenyl compound, bisphenol A diglycidyl ether and its hydrogenated product, o-cresol novolac epoxy resin, a dicyclopentadiene epoxy resin, a biphenyl epoxy resin, a bisphenol A epoxy resin, a bisphenol F epoxy resin, a phenylene skeleton epoxy resin, and an epoxy resin compound having two or more functional groups.

[0309] Among these, from the viewpoint of being more apt to exert the effect of the present invention, it is preferable to use multifunctional epoxy resin, dicyclopentadiene epoxy resin, and bisphenol F type epoxy resin. In addition, multifunctional aromatic epoxy resin is preferred among the multifunctional epoxy resin.

[0310] As the epoxy resin (B1), an epoxy resin having an unsaturated hydrocarbon group can be used. Epoxy resins having unsaturated hydrocarbon groups have higher compatibility with acrylic resins than epoxy resins without unsaturated hydrocarbon groups. Therefore, by using an epoxy resin having an unsaturated hydrocarbon group, the stability of the package obtained using the first thermosetting resin film (x1-1) is improved.

[0311] Examples of epoxy resins having unsaturated hydrocarbon groups include compounds in which a portion of the epoxy resin group of a multifunctional epoxy resin is converted into a group having unsaturated hydrocarbon groups. Such compounds can be obtained, for example, by an addition reaction of an epoxy resin group with (meth)acrylic acid or a derivative thereof. Examples of epoxy resins having unsaturated hydrocarbon groups include compounds in which a group having an unsaturated hydrocarbon group is directly bonded to an aromatic ring, etc., which constitutes the epoxy resin.

[0312] The unsaturated hydrocarbon group is a polymerizable unsaturated group, and specific examples thereof include vinyl (ethenyl), 2-propenyl (allyl), (meth)acryloyl, and (meth)acrylamide. Among these, acryloyl is preferred.

[0313] The number average molecular weight of the epoxy resin (B1) is not particularly limited, but is preferably 300 to 30,000, more preferably 400 to 10,000, and even more preferably 500 to 3,000, from the viewpoint of the curability of the first thermosetting resin film (x1-1) and the strength and heat resistance of the first cured resin film (r1) after curing.

[0314] The epoxy resin equivalent of the epoxy resin (B1) is preferably 100 to 1,000 g / eq, more preferably 300 to 800 g / eq.

[0315] The epoxy resin (B1) may be used alone or in combination of two or more. When two or more epoxy resins (B1) are used in combination, the combination and ratio thereof can be arbitrarily selected.

[0316] Thermal curing agent (B2)

[0317] The thermosetting agent (B2) functions as a curing agent for the epoxy resin (B1).

[0318] The thermosetting agent (B2) is, for example, a compound having two or more functional groups capable of reacting with an epoxy resin group in one molecule. Examples of such functional groups include phenolic hydroxyl groups, alcoholic hydroxyl groups, amino groups, carboxyl groups, and groups in which acid groups are dehydrated. Phenolic hydroxyl groups, amino groups, or groups in which acid groups are dehydrated are preferred, and phenolic hydroxyl groups or amino groups are more preferred.

[0319] Examples of the phenolic curing agent having a phenolic hydroxyl group in the thermosetting agent (B2) include polyfunctional phenolic resins, bisphenols, novolac-type phenolic resins, dicyclopentadiene-based phenolic resins, and aralkylphenolic resins.

[0320] Examples of the amine curing agent having an amino group in the heat curing agent (B2) include dicyandiamide (hereinafter referred to as "DICY").

[0321] Among these, from the viewpoint of more easily exhibiting the effects of the present invention, phenolic curing agents having a phenolic hydroxyl group are preferred, and novolac-type phenolic resins are more preferred.

[0322] The heat curing agent (B2) may have an unsaturated hydrocarbon group.

[0323] Examples of the thermosetting agent (B2) having an unsaturated hydrocarbon group include a compound in which a portion of the hydroxyl groups of a phenolic resin are replaced by a group having an unsaturated hydrocarbon group, or a compound in which a group having an unsaturated hydrocarbon group is directly bonded to an aromatic ring of a phenolic resin. The unsaturated hydrocarbon group in the thermosetting agent (B2) is the same as the unsaturated hydrocarbon group in the epoxy resin having an unsaturated hydrocarbon group.

[0324] When a phenolic curing agent is used as the thermosetting agent (B2), the thermosetting agent (B2) is preferably a thermosetting agent (B2) having a high softening point or glass transition temperature from the viewpoint of easily improving the peelability of the first cured resin film (r1) from the first supporting sheet (Y1).

[0325] In the thermosetting agent (B2), the number average molecular weight of the resin component such as polyfunctional phenolic resin, novolac phenolic resin, dicyclopentadiene phenolic resin, and aralkylphenolic resin is preferably 300 to 30,000, more preferably 400 to 10,000, and even more preferably 500 to 3,000.

[0326] In the thermosetting agent (B2), the molecular weight of non-resin components such as bisphenol and dicyandiamide is not particularly limited, but is preferably 60 to 500, for example.

[0327] The thermosetting agent (B2) may be used alone or in combination of two or more. When two or more thermosetting agents (B2) are used, the combination and ratio thereof may be arbitrarily selected.

[0328] In the first thermosetting resin composition (x1-1-1), the content of the thermosetting agent (B2) is preferably 0.1 to 500 parts by mass, more preferably 1 to 200 parts by mass, relative to 100 parts by mass of the epoxy resin (B1). When the content of the thermosetting agent (B2) is above the above lower limit, curing of the first thermosetting resin film (x1-1) becomes easier. In addition, when the content of the thermosetting agent (B2) is below the above upper limit, the moisture absorption rate of the first thermosetting resin film (x1-1) is reduced, and the stability of the package obtained using the first thermosetting resin film (x1-1) is further improved.

[0329] In the first thermosetting resin composition (x1-1-1), the content of the thermosetting component (B) (the total content of the epoxy resin (B1) and the thermosetting agent (B2)) is preferably 50 to 1000 parts by mass, more preferably 100 to 900 parts by mass, and even more preferably 150 to 800 parts by mass, relative to 100 parts by mass of the polymer component (A). By having the content of the thermosetting component (B) within this range, the adhesive force between the first cured resin film (r1) and the first support sheet (Y1) is suppressed, thereby improving the releasability of the first support sheet (Y1).

[0330] (Curing accelerator (C))

[0331] The first thermosetting resin film (x1-1) and the first thermosetting resin composition (x1-1-1) may contain a curing accelerator (C).

[0332] The curing accelerator (C) is a component for adjusting the curing speed of the first thermosetting resin composition (x1-1-1).

[0333] Preferred curing accelerators (C) include, for example, tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; imidazoles (imidazoles in which one or more hydrogen atoms are replaced by groups other than hydrogen atoms) such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-ester-5-hydroxymethylimidazole; organic phosphines (phosphines in which one or more hydrogen atoms are replaced by organic groups) such as tributylphosphine, diphenylphosphine, and triphenylphosphine; and tetraphenylboron salts such as tetraphenylphosphine tetraphenylborate and triphenylphosphine tetraphenylborate.

[0334] Among these, from the viewpoint of more easily exhibiting the effects of the present invention, imidazoles are preferred, and 2-phenyl-4,5-dihydroxymethylimidazole is more preferred.

[0335] The curing accelerator (C) may be used alone or in combination of two or more. When two or more curing accelerators (C) are used, the combination and ratio thereof may be arbitrarily selected.

[0336] In the first thermosetting resin composition (x1-1-1), the content of the curing accelerator (C) when using the curing accelerator (C) is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the content of the thermosetting component (B). By having the content of the curing accelerator (C) be above the above lower limit, the effect of using the curing accelerator (C) can be more significant. In addition, by having the content of the curing accelerator (C) be below the above upper limit, for example, the effect of the high-polarity curing accelerator (C) in suppressing the migration and segregation of the first thermosetting resin film (x1-1) toward the adhesive interface side with the adherend under high temperature and high humidity conditions becomes better, and the stability of the package obtained using the first thermosetting resin film (x1-1) is further improved.

[0337] (Filling material (D))

[0338] The first thermosetting resin film (x1-1) and the first thermosetting resin composition (x1-1-1) may contain a filler (D).

[0339] The inclusion of the filler (D) facilitates adjustment of the thermal expansion coefficient of the first cured resin film (r1) obtained by curing the first thermosetting resin film (x1-1) within an appropriate range, further improving the stability of the package obtained using the first thermosetting resin film (x1-1). Furthermore, the inclusion of the filler (D) in the first thermosetting resin film (x1-1) reduces the moisture absorption rate of the first cured resin film (r1), thereby improving heat dissipation.

[0340] The filler (D) may be either an organic filler or an inorganic filler, but is preferably an inorganic filler. Preferred inorganic fillers include powders such as silica, alumina, talc, calcium carbonate, titanium dioxide, ferric oxide, silicon carbide, and boron nitride; spherical beads of these inorganic fillers; surface-modified products of these inorganic fillers; single-crystal fibers of these inorganic fillers; and glass fibers. Of these, silica or alumina is preferred for further enhancing the effects of the present invention.

[0341] The filler (D) may be used alone or in combination of two or more.

[0342] When there are two or more fillers (D), the combination and ratio thereof can be arbitrarily selected.

[0343] When a filler (D) is used, the content of the filler (D) is preferably 5 to 80% by mass, more preferably 7 to 60% by mass, based on the total amount of the active ingredients in the first thermosetting resin composition (x1-1-1). When the content of the filler (D) is within this range, the above-mentioned adjustment of the thermal expansion coefficient becomes easier.

[0344] The average particle diameter of the filler (D) is preferably 5 nm to 1000 nm, more preferably 5 nm to 500 nm, and even more preferably 10 nm to 300 nm. The above average particle diameter is the average value of the outer diameters of one particle measured at several locations.

[0345] (Coupling agent (E))

[0346] The first thermosetting resin film (x1-1) and the first thermosetting resin composition (x1-1-1) may contain a coupling agent (E).

[0347] By using a coupling agent (E) having a functional group capable of reacting with an inorganic compound or an organic compound, the adhesion and close contact between the first thermosetting resin film (x1-1) and the adherend of the first cured resin film (r1) can be easily improved. This further reduces the risk of shedding of the first cured resin film (r1) serving as a protective film. Furthermore, by using a coupling agent (E), the first cured resin film (r1) obtained by curing the first thermosetting resin film (x1-1) retains its heat resistance and easily improves its water resistance.

[0348] The coupling agent (E) is preferably a compound having a functional group capable of reacting with the functional groups of the polymer component (A) and the thermosetting component (B), and is preferably a silane coupling agent. Preferred silane coupling agents include, for example, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, 3-glycidoxymethyldiethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-(2-aminoethylamino)propyltrimethoxysilane, 3- -(2-aminoethylamino)propylmethyldiethoxysilane, 3-(phenylamino)propyltrimethoxysilane, 3-anilinopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, bis(3-triethoxysilylpropyl)tetrasulfane, methyltrimethoxysilane, methyltriethoxysilane, vinyltrimethoxysilane, vinyltriacetoxysilane, and imidazole silane, etc.

[0349] The coupling agent (E) may be used alone or in combination of two or more. When two or more coupling agents (E) are used, the combination and ratio thereof can be arbitrarily selected.

[0350] In the first thermosetting resin composition (x1-1-1), when a coupling agent (E) is used, the content of the coupling agent (E) is preferably 0.03 to 20 parts by mass, more preferably 0.05 to 10 parts by mass, and even more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the total content of the polymer component (A) and the thermosetting component (B). By having the content of the coupling agent (E) be greater than the above lower limit, the effects of using the coupling agent (E), such as improved dispersibility of the filler (D) in the resin and improved adhesion between the first thermosetting resin film (x1-1) and the adherend, can become more significant. In addition, by having the content of the coupling agent (E) be less than the above upper limit, the occurrence of air leakage is further suppressed.

[0351] (Crosslinking agent (F))

[0352] When using the above-mentioned acrylic resin or the like having functional groups such as vinyl, (meth)acryloyl, amino, hydroxyl, carboxyl, or isocyanate groups that can be combined with other compounds as the polymer component (A), the first thermosetting resin film (x1-1) and the first thermosetting resin composition (x1-1-1) may contain a crosslinking agent (F) for combining and crosslinking the functional groups with other compounds.

[0353] By crosslinking using the crosslinking agent (F), the initial adhesive force and cohesive force of the first thermosetting resin film (x1-1) can be adjusted.

[0354] Examples of the crosslinking agent (F) include organic polyvalent isocyanate compounds, organic polyvalent imine compounds, metal chelate crosslinking agents (crosslinking agents having a metal chelate structure), and aziridine crosslinking agents (crosslinking agents having an aziridine group).

[0355] Examples of organic polyvalent isocyanate compounds include aromatic polyvalent isocyanate compounds, aliphatic polyvalent isocyanate compounds, and alicyclic polyvalent isocyanate compounds (hereinafter, these compounds may be collectively referred to as "aromatic polyvalent isocyanate compounds, etc."); trimers, isocyanurates, and adducts of these aromatic polyvalent isocyanate compounds, etc.; and isocyanate-terminated urethane prepolymers obtained by reacting these aromatic polyvalent isocyanate compounds, etc. with polyol compounds. The "adduct" mentioned above refers to a reaction product of the aromatic polyvalent isocyanate compound, aliphatic polyvalent isocyanate compound, or alicyclic polyvalent isocyanate compound with a low-molecular-weight active hydrogen-containing compound such as ethylene glycol, propylene glycol, neopentyl glycol, trimethylolpropane, or castor oil. Examples thereof include a xylene diisocyanate adduct of trimethylolpropane.

[0356] More specifically, the organic polyvalent isocyanate compound includes, for example, a compound obtained by adding any one or more of toluene diisocyanate, hexamethylene diisocyanate, and xylene diisocyanate to all or part of the hydroxyl groups of a polyol such as 2,4-toluene diisocyanate; 2,6-toluene diisocyanate; 1,3-xylene diisocyanate; 1,4-xylene diisocyanate; diphenylmethane-4,4'-diisocyanate; diphenylmethane-2,4'-diisocyanate; 3-diphenylmethane diisocyanate; hexamethylene diisocyanate; isophorone diisocyanate; dicyclohexylmethane-4,4'-diisocyanate; dicyclohexylmethane-2,4'-diisocyanate; and trimethylolpropane; for example, lysine diisocyanate.

[0357] Examples of the organic polyvalent imine compound include N,N'-diphenylmethane-4,4'-bis(1-aziridinecarboxamide), trimethylolpropane-tris-β-aziridine propionate, tetramethylolmethane-tris-β-aziridine propionate, and N,N'-toluene-2,4-bis(1-aziridinecarboxamide)triethylenemelamine.

[0358] When an organic polyvalent isocyanate compound is used as the crosslinking agent (F), a hydroxyl group-containing polymer is preferably used as the polymer component (A). When the crosslinking agent (F) has an isocyanate group and the polymer component (A) has a hydroxyl group, a crosslinked structure can be easily introduced into the first thermosetting resin film (x1-1) through the reaction between the crosslinking agent (F) and the polymer component (A).

[0359] The crosslinking agent (F) may be used alone or in combination of two or more. When two or more crosslinking agents (F) are used, the combination and ratio thereof can be arbitrarily selected.

[0360] In the first thermosetting resin composition (x1-1-1), when a crosslinking agent (F) is used, the content of the crosslinking agent (F) is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, and even more preferably 0.5 to 5 parts by mass, relative to 100 parts by mass of the polymer component (A). When the content of the crosslinking agent (F) is above the lower limit, the effect produced by using the crosslinking agent (F) can be more significant. In addition, when the content of the crosslinking agent (F) is below the upper limit, excessive use of the crosslinking agent (F) can be suppressed.

[0361] (Energy ray curable resin (G))

[0362] The first thermosetting resin film (x1-1) and the first thermosetting resin composition (x1-1-1) may contain an energy ray-curable resin (G).

[0363] The first thermosetting resin film (x1-1) can change its properties by energy ray irradiation by containing the energy ray curable resin (G).

[0364] The energy-beam curable resin (G) is obtained by polymerizing (curing) an energy-beam curable compound. Examples of the energy-beam curable compound include compounds having at least one polymerizable double bond in the molecule, preferably acrylate compounds having a (meth)acryloyl group.

[0365] Examples of acrylate compounds include (meth)acrylates containing a chain aliphatic skeleton, such as trimethylolpropane tri(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, and 1,6-hexanediol di(meth)acrylate; (meth)acrylates containing a cyclic aliphatic skeleton, such as dicyclopentanyl di(meth)acrylate; polyalkylene glycol (meth)acrylates, such as polyethylene glycol di(meth)acrylate; oligoester (meth)acrylates; urethane (meth)acrylate oligomers; epoxy-modified (meth)acrylates; polyether (meth)acrylates other than the above-mentioned polyalkylene glycol (meth)acrylates; and itaconic acid oligomers.

[0366] The weight average molecular weight of the energy ray curable compound is preferably 100 to 30,000, more preferably 300 to 10,000.

[0367] The energy-ray curable compound used for polymerization may be used alone or in combination of two or more. When two or more energy-ray curable compounds are used for polymerization, the combination and ratio thereof can be arbitrarily selected.

[0368] When an energy-ray curable resin (G) is used, the content of the energy-ray curable resin (G) is preferably 1 to 95% by mass, more preferably 5 to 90% by mass, and even more preferably 10 to 85% by mass based on the total amount of active ingredients in the first thermosetting resin composition (x1-1-1).

[0369] (Photopolymerization initiator (H))

[0370] When the first thermosetting resin film (x1-1) and the first thermosetting resin composition (x1-1-1) contain an energy ray-curable resin (G), in order to effectively promote the polymerization reaction of the energy ray-curable resin (G), the first thermosetting resin film (x1-1) and the first thermosetting resin composition (x1-1-1) may contain a photopolymerization initiator (H).

[0371] Examples of the photopolymerization initiator (H) include benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin benzoate, benzoin dimethyl ketal, 2,4-diethylthioxanthone, 1-hydroxycyclohexyl phenyl ketone, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, benzyl ester, dibenzyl ester, diacetyl, 1,2-diphenylmethane, 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone, 2,4,6-trimethylbenzoyldiphenylphosphine oxide, and 2-chloroanthraquinone.

[0372] The photopolymerization initiator (H) may be used alone or in combination of two or more. When two or more photopolymerization initiators (H) are used, the combination and ratio thereof can be arbitrarily selected.

[0373] In the first thermosetting resin composition (x1-1-1), the content of the photopolymerization initiator (H) relative to 100 parts by mass of the energy ray curable resin (G) is preferably 0.1 to 20 parts by mass, more preferably 1 to 10 parts by mass, and even more preferably 2 to 5 parts by mass.

[0374] (General Additive (I))

[0375] The first thermosetting resin film (x1-1) and the first thermosetting resin composition (x1-1-1) may contain a general-purpose additive (I) within a range that does not impair the effects of the present invention. The general-purpose additive (I) may be a known one or may be arbitrarily selected according to the purpose without particular limitation.

[0376] Preferred general additives (I) include, for example, rheology control agents, surfactants, silicone oils, plasticizers, antistatic agents, antioxidants, and getters.

[0377] The universal additive (I) may be used alone or in combination of two or more. When two or more universal additives (I) are used, the combination and ratio thereof may be arbitrarily selected.

[0378] The content of the general-purpose additive (I) is not particularly limited and can be appropriately selected depending on the intended purpose.

[0379] The first thermosetting resin composition (x1-1-1) and the first thermosetting resin film (x1-1) do not correspond to any of the above-mentioned polymer components (A), thermosetting components (B), curing accelerators (C), fillers (D), coupling agents (E), cross-linking agents (F), energy-ray curing resins (G), photopolymerization initiators (H), and additives (I) within the scope that does not impair the effects of the present invention, and may contain other components.

[0380] The first thermosetting resin composition (x1-1-1) and the first thermosetting resin film (x1-1) may contain only one other component or two or more other components. In the case of two or more other components, the combination and ratio thereof can be arbitrarily selected.

[0381] The content of the other components in the first thermosetting resin composition (x1-1-1) and the first thermosetting resin film (x1-1) is not particularly limited and can be appropriately selected depending on the intended purpose.

[0382] (Solvent)

[0383] The first thermosetting resin composition (x1-1-1) preferably further contains a solvent.

[0384] The first thermosetting resin composition (x1-1-1) containing a solvent has good handleability.

[0385] The solvent is not particularly limited, and preferred examples include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutanol (2-methyl-1-propanol), and 1-butanol; esters such as ethyl anhydride; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; and amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone.

[0386] The solvent may be used alone or in combination of two or more. When two or more solvents are used, the combination and ratio thereof can be arbitrarily selected.

[0387] From the viewpoint of enabling more uniform mixing of the components contained in the first thermosetting resin composition (x1-1-1), the solvent is preferably methyl ethyl ketone or the like.

[0388] (Method for preparing the first thermosetting resin composition (x1-1-1))

[0389] The first thermosetting resin composition (x1-1-1) is prepared by mixing and preparing the respective components constituting the first thermosetting resin composition.

[0390] The order of addition of the components is not particularly limited, and two or more components may be added simultaneously. When a solvent is used, the solvent may be mixed with any components other than the solvent in advance after diluting the components, or the solvent may be mixed with the components without diluting the components in advance.

[0391] The method for mixing the components during compounding is not particularly limited and can be appropriately selected from known methods such as mixing with a rotary stirrer or stirring blades, mixing using a mixer, and mixing with ultrasonic waves.

[0392] The temperature and time during addition and mixing of the components are not particularly limited as long as the components do not deteriorate, and can be adjusted appropriately. However, the temperature is preferably 15 to 30°C.

[0393] <First energy ray-curable resin film (x1-2)>

[0394] The first energy-ray curable resin film (x1-2) contains an energy-ray curable component (a).

[0395] The first energy-ray curable resin film (x1-2) is formed of, for example, a first energy-ray curable resin composition (x1-2-1) containing an energy-ray curable component (a).

[0396] The energy ray-curable component (a) is preferably uncured and preferably has adhesiveness, and more preferably is uncured and has adhesiveness.

[0397] It is worth noting that in the following description of this specification, "the content of each component based on the total amount of effective ingredients in the first energy ray-curable resin composition (x1-2-1)" is the same as "the content of each component in the first energy ray-curable resin film (x1-2) formed by the first energy ray-curable resin composition (x1-2-1)".

[0398] (Energy ray curable component (a))

[0399] The energy ray curable component (a) is a component that is cured by energy ray irradiation, and is a component for imparting film-forming properties, flexibility, and the like to the first energy ray curable resin film (x1-2).

[0400] Examples of the energy-curable component (a) include a polymer (a1) having an energy-curable group and a weight average molecular weight of 80,000 to 2,000,000, and a compound (a2) having an energy-curable group and a molecular weight of 100 to 80,000. The polymer (a1) may or may not be crosslinked with a crosslinking agent.

[0401] (Polymer (a1))

[0402] The polymer (a1) having an energy-ray curable group and a weight-average molecular weight of 80,000 to 2,000,000 is, for example, an propylene resin (a1-1) obtained by polymerizing an propylene polymer (a11) having a functional group capable of reacting with a group possessed by another compound, and an energy-ray curable compound (a12) having an energy-ray curable group such as a group reactive with the functional group and an energy-ray curable double bond.

[0403] As functional groups that can react with groups possessed by other compounds, for example, there are hydroxyl groups, carboxyl groups, amino groups, replaced amino groups (groups in which one amino group or two hydrogen atoms are replaced by groups other than hydrogen atoms), and epoxy resin groups. However, from the perspective of preventing corrosion of circuits such as semiconductor wafers or semiconductor chips, the functional groups are preferably groups other than carboxyl groups. Among these, the functional groups are preferably hydroxyl groups.

[0404] Propylene polymer (a11) having a functional group

[0405] The propylene polymer (a11) having a functional group may be, for example, a copolymerization product of a propylene monomer having a functional group and a propylene monomer not having a functional group. In addition to these monomers, a copolymerization product of a monomer other than a propylene monomer (non-propylene monomer) may also be used. The propylene polymer (a11) may be a random copolymer or a block copolymer.

[0406] Examples of the acrylic monomer having a functional group include a hydroxyl group-containing monomer, a carboxyl group-containing monomer, an amino group-containing monomer, a substituted amino group-containing monomer, and an epoxy resin group-containing monomer.

[0407] Examples of the hydroxyl group-containing monomer include hydroxyalkyl (meth)acrylates such as hydroxymethyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, 3-hydroxybutyl (meth)acrylate, and 4-hydroxybutyl (meth)acrylate; and non-(meth)acrylic unsaturated alcohols (unsaturated alcohols without a (meth)acryloyl skeleton) such as vinyl alcohol and allyl alcohol.

[0408] Examples of carboxyl group-containing monomers include ethylenically unsaturated monocarboxylic acids (monocarboxylic acids having an ethylenically unsaturated bond) such as (meth)acrylic acid and crotonic acid; ethylenically unsaturated dicarboxylic acids (dicarboxylic acids having an ethylenically unsaturated bond) such as fumaric acid, itaconic acid, maleic acid, and citraconic acid; dehydrates of the above ethylenically unsaturated dicarboxylic acids; and methyl (meth)acrylates such as 2-carboxyethyl methacrylate.

[0409] The acrylic monomer having a functional group is preferably a monomer containing a hydroxyl group or a monomer containing a carboxyl group, and more preferably a monomer containing a hydroxyl group.

[0410] The propylene monomer having a functional group constituting the propylene polymer (a11) may be used alone or in combination of two or more. When two or more propylene monomers having a functional group constituting the propylene polymer (a11) are used, the combination and ratio thereof may be arbitrarily selected.

[0411] Examples of acrylic monomers having no functional group include (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, n-butyl (meth)acrylate, isobutyl (meth)acrylate, sec-butyl (meth)acrylate, tert-butyl (meth)acrylate, pentyl (meth)acrylate, ethyl (meth)acrylate, heptyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, n-octyl (meth)acrylate, n-nonyl (meth)acrylate, isononyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, 2-octyl (meth)acrylate, 2-octyl (meth)acrylate, 2-non ... (Meth)acrylate alkyl esters having a chain structure in which the alkyl group constituting the alkyl ester has 1 to 18 carbon atoms, such as octadecyl (meth)acrylate, decyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate (lauryl (meth)acrylate), tridecyl (meth)acrylate, tetradecyl (meth)acrylate (myristyl (meth)acrylate), pentadecyl (meth)acrylate, hexadecyl (meth)acrylate (palmityl (meth)acrylate), heptadecyl (meth)acrylate, and octadecyl (meth)acrylate (octadecyl (meth)acrylate).

[0412] Examples of acrylic monomers having no functional groups include (meth)acrylates containing alkoxyalkyl groups such as methoxymethyl (meth)acrylate, methoxyethyl (meth)acrylate, ethoxymethyl (meth)acrylate, and ethoxyethyl (meth)acrylate; (meth)acrylates containing aromatic groups such as (meth)acrylate aryl esters such as phenyl (meth)acrylate; non-crosslinking (meth)acrylamide and its derivatives; and (meth)acrylates having non-crosslinking tertiary amino groups such as N,N-diaminoethyl (meth)acrylate and N,N-diaminopropyl (meth)acrylate.

[0413] The propylene-based monomer having no functional group constituting the propylene-based polymer (a11) may be used alone or in combination of two or more. When there are two or more propylene-based monomers having no functional group constituting the propylene-based polymer (a11), the combination and ratio thereof may be arbitrarily selected.

[0414] Examples of the non-acrylic monomer include olefins such as ethylene and norbornene; vinyl acetate; and styrene.

[0415] The non-propylene monomer constituting the propylene polymer (a11) may be used alone or in combination of two or more. When two or more non-propylene monomers are used to constitute the propylene polymer (a11), the combination and ratio thereof may be arbitrarily selected.

[0416] In the propylene-based polymer (a11), the ratio (content) of the constituent units derived from the propylene-based monomer having a functional group relative to the total mass of the constituent units constituting the propylene-based polymer (a11) is preferably 0.1 to 50% by mass, more preferably 1 to 40% by mass, and even more preferably 3 to 30% by mass. By setting the ratio within this range, the content of the energy-curable group in the propylene-based resin (a1-1) obtained by copolymerizing the propylene-based polymer (a11) and the energy-curable compound (a12) can be easily adjusted to a preferred range for the degree of curing of the first cured resin film (r1).

[0417] The propylene polymer (a11) constituting the propylene resin (a1-1) may be used alone or in combination of two or more. When two or more propylene polymers (a11) are used to constitute the propylene resin (a1-1), the combination and ratio thereof may be arbitrarily selected.

[0418] The content of the propylene resin (a1-1) is preferably 1 to 60% by mass, more preferably 3 to 50% by mass, and even more preferably 5 to 40% by mass based on the total amount of effective ingredients in the first energy ray-curable resin composition (x1-2-1).

[0419] Energy ray curable compound (a12)

[0420] As a group capable of reacting with the functional group possessed by the acrylic polymer (a11), the energy-ray curable compound (a12) preferably has one or more selected from the group consisting of an isocyanate group, an epoxy resin group, and a carboxyl group, and the group more preferably has an isocyanate group.

[0421] When the energy beam curable compound (a12) has an isocyanate group as the group, for example, the cyanate group easily reacts with the hydroxyl group of the acrylic polymer (a11) having a hydroxyl group as the functional group.

[0422] The energy ray curable compound (a12) preferably has 1 to 5 energy ray curable groups in one molecule, more preferably 1 to 2 energy ray curable groups.

[0423] Examples of the energy-beam curable compound (a12) include 2-methacryloyloxyethyl isocyanate, methyl-isopropenyl-α,α-dimethylbenzyl isocyanate, methacrylic isocyanate, allyl isocyanate, and 1,1-(bisacryloyloxymethyl)ethyl isocyanate; acryloyl monoisocyanate compounds obtained by reacting a diisocyanate compound or a polyisocyanate compound with (methyl)hydroxyethyl acrylate; and acryloyl monoisocyanate compounds obtained by reacting a diisocyanate compound or a polyisocyanate compound with a polyol compound and (methyl)hydroxyethyl acrylate. Among these, the energy-beam curable compound (a12) is preferably 2-methacryloyloxyethyl isocyanate.

[0424] The energy-ray curable compound (a12) constituting the propylene resin (a1-1) may be used alone or in combination of two or more. When there are two or more energy-ray curable compounds (a12) constituting the propylene resin (a1-1), the combination and ratio thereof may be arbitrarily selected.

[0425] In the propylene resin (a1-1), the ratio of the content of the energy-ray curable group from the energy-ray curable compound (a12) relative to the content of the functional group from the propylene polymer (a11) is preferably 20 to 120 mol%, more preferably 35 to 100 mol%, and more preferably 50 to 100 mol%. By having the ratio of the content in such a range, the adhesive force of the first cured resin film (r1) after curing becomes greater. Therefore, the film peeling of the first cured resin film (r1) as a protective film can be further suppressed. It is worth noting that when the energy-ray curable compound (a12) is a monofunctional (having one of the groups in one molecule) compound, the upper limit of the ratio of the content is 100 mol%, but when the energy-ray curable compound (a12) is a polyfunctional (having two or more of the groups in one molecule) compound, the upper limit of the ratio of the content can exceed 100 mol%.

[0426] The weight average molecular weight (Mw) of the polymer (a1) is preferably 100,000 to 2,000,000, more preferably 300,000 to 1,500,000.

[0427] In the case where at least a portion of the polymer (a1) is cross-linked by a cross-linking agent, the polymer (a1) may be a monomer having a group that reacts with the cross-linking agent but not belonging to any of the above-mentioned monomers described as constituting the propylene polymer (a11), and cross-linked at the group that reacts with the cross-linking agent, or may be cross-linked at a group that reacts with the functional group derived from an energy-ray-curable compound (a12).

[0428] The polymer (a1) may be used alone or in combination of two or more. When two or more polymers (a1) are used, the combination and ratio thereof can be arbitrarily selected.

[0429] (Compound (a2))

[0430] The energy-curable group of the compound (a2) having an energy-curable group and a weight average molecular weight of 100 to 80,000 is, for example, a group containing an energy-curable double bond, preferably a (meth)acryloyl group or a vinyl group.

[0431] The compound (a2) is not particularly limited as long as it satisfies the above conditions. Examples thereof include low molecular weight compounds having energy-ray curable groups, epoxy resins having energy-ray curable groups, and phenolic resins having energy-ray curable groups.

[0432] The low molecular weight compound having an energy-ray curable group in compound (a2) is, for example, a multifunctional monomer or oligomer, preferably an acrylate compound having a (meth)acryloyl group. Examples of the acrylate compound include 2-hydroxy-3-(meth)acryloyloxypropyl methacrylate, polyethylene glycol di(meth)acrylate, propoxylated ethoxylated bisphenol A di(meth)acrylate, 2,2-bis[4-((meth)acryloyloxypolyethoxy)phenyl]propane, ethoxylated bisphenol A di(meth)acrylate, 2,2-bis[4-((meth)acryloyloxydiethoxy)phenyl]propane, 9,9-bis[4-(2-(meth)acryloyloxyethoxy)phenyl]propane, phenyl]fluorene, 2,2-bis[4-((meth)acryloyloxypolypropoxy)phenyl]propane, tricyclodecane dimethanol (meth)acrylate, 1,10-decanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, 1,9-nonanediol di(meth)acrylate, dipropylene glycol di(meth)acrylate, tripropylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, polybutylene glycol di(meth)acrylate, ethylene glycol di(meth)acrylate, Diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, 2,2-bis[4-((meth)acryloyloxyethoxy)phenyl]propane, neopentyl glycol di(meth)acrylate, ethoxylated polypropylene glycol di(meth)acrylate, 2-hydroxy-1,3-di(meth)acryloyloxypropane and other bifunctional (meth)acrylates; tris(2-(meth)acryloyloxyethyl)isocyanurate, ε-caprolactone-modified tris-(2-(meth)acryloyloxyethyl)isocyanurate, Multifunctional (meth)acrylates such as ethoxylated glycerol tri(meth)acrylate, pentaerythritol tri(meth)acrylate, trimethylolpropane tri(meth)acrylate, ditrimethylolpropane tetra(meth)acrylate, ethoxylated pentaerythritol tetra(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol poly(meth)acrylate, and dipentaerythritol hexa(meth)acrylate; and multifunctional (meth)acrylate oligomers such as urethane (meth)acrylate oligomers.

[0433] Examples of the epoxy resin having an energy-ray curable group and the phenol resin having an energy-ray curable group in the compound (a2) include those described in paragraph 0043 of Japanese Patent Application Laid-Open No. 2013-194102.

[0434] The weight average molecular weight of the compound (a2) is preferably 100 to 30,000, more preferably 300 to 10,000.

[0435] The compound (a2) may be used alone or in combination of two or more. When two or more compounds (a2) are used, the combination and ratio thereof can be arbitrarily selected.

[0436] (Polymer (b) Not Having an Energy Ray-Curable Group)

[0437] When the first energy-ray curable resin composition (x1-2-1) and the first energy-ray curable resin film (x1-2) contain the compound (a2) as the energy-ray curable component (a), they preferably further contain a polymer (b) having no energy-ray curable group.

[0438] At least a portion of the polymer (b) having no energy ray-curable group may or may not be crosslinked by a crosslinking agent.

[0439] Examples of the polymer (b) not having an energy-ray-curable group include acrylic polymers, phenoxy resins, urethane resins, polyester fibers, rubber resins, and acrylic urethane resins. Among these, the polymer (b) is preferably an acrylic polymer (hereinafter sometimes referred to as "acrylic polymer (b-1)").

[0440] The propylene polymer (b-1) may be a known one, for example, a homopolymer of one propylene monomer or a copolymer of two or more propylene monomers. In addition, the propylene polymer (b-1) may be a copolymer of one or more propylene monomers and one or more monomers other than the propylene monomer (non-propylene monomer).

[0441] Examples of the acrylic monomer constituting the acrylic polymer (b-1) include alkyl (meth)acrylates, (meth)acrylates having a cyclic skeleton, (meth)acrylates containing a glycidyl group, (meth)acrylates containing a hydroxyl group, and (meth)acrylates containing a substituted amino group.

[0442] As the alkyl (meth)acrylate, for example, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, n-butyl (meth)acrylate, isobutyl (meth)acrylate, sec-butyl (meth)acrylate, tert-butyl (meth)acrylate, pentyl (meth)acrylate, ethyl (meth)acrylate, heptyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, n-octyl (meth)acrylate, n-nonyl (meth)acrylate, isononyl (meth)acrylate, Alkyl (meth)acrylates having a chain structure in which the alkyl group constituting the alkyl ester has 1 to 18 carbon atoms, such as decyl (meth)acrylate, undecanoate (meth)acrylate, dodecyl (meth)acrylate (lauryl (meth)acrylate), tridecyl (meth)acrylate, tetradecyl (meth)acrylate (myristyl (meth)acrylate), pentadecyl (meth)acrylate, hexadecyl (meth)acrylate (palmityl (meth)acrylate), heptadecyl (meth)acrylate, and octadecyl (meth)acrylate (octadecyl (meth)acrylate).

[0443] Examples of the (meth)acrylate having a cyclic skeleton include cycloalkyl (meth)acrylates such as isobornyl (meth)acrylate and dicyclopentanyl (meth)acrylate; aralkyl (meth)acrylates such as benzyl (meth)acrylate; cycloalkenyl (meth)acrylates such as dicyclopentenyl (meth)acrylate; and cycloalkenyloxyalkyl (meth)acrylates such as dicyclopentenyloxyethyl (meth)acrylate.

[0444] Examples of the glycidyl group-containing (meth)acrylate include glycidyl (meth)acrylate, etc. Examples of the hydroxyl group-containing (meth)acrylate include hydroxymethyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, 3-hydroxybutyl (meth)acrylate, and 4-hydroxybutyl (meth)acrylate.

[0445] Examples of the (meth)acrylate containing the substituted amino group include N-aminoethyl (meth)acrylate and the like.

[0446] Examples of the non-propylene monomer constituting the propylene polymer (b-1) include olefins such as ethylene and norbornene; vinyl acetate; and styrene.

[0447] The polymer (b) having no energy ray-curable group and at least partially crosslinked by a crosslinking agent includes, for example, a polymer (b) in which a reactive functional group reacts with a crosslinking agent.

[0448] The reactive functional group can be appropriately selected according to the type of crosslinking agent, and is not particularly limited. For example, when the crosslinking agent is a polyisocyanate compound, the reactive functional group includes, for example, a hydroxyl group, a carboxyl group, and an amino group. Among these, a hydroxyl group having high reactivity with an isocyanate group is preferred.

[0449] When the crosslinking agent is an epoxy resin compound, examples of the reactive functional group include a carboxyl group, an amino group, and an amide group. Among these, a carboxyl group having high reactivity with an epoxy resin group is preferred.

[0450] However, in order to prevent corrosion of the circuits of the semiconductor wafer or semiconductor chip, it is preferable that the reactive functional group be a group other than a carboxyl group.

[0451] The polymer (b) having a reactive functional group but not having an energy-ray curable group is, for example, obtained by polymerizing a monomer having at least a reactive functional group. In the case of an acrylic polymer (b-1), either or both of the acrylic monomers and non-acrylic monomers listed as monomers constituting the polymer (b) may have reactive functional groups. For example, the polymer (b) having a hydroxyl group as a reactive functional group is, for example, obtained by polymerizing a hydroxyl (meth)acrylate. In addition, the polymer (b) may be obtained by polymerizing a monomer in which one or two or more hydrogen atoms in the acrylic monomers or non-acrylic monomers listed above are replaced with the reactive functional groups.

[0452] In the polymer (b) having a reactive functional group, the ratio (content) of the amount of the constituent units derived from the monomer having a reactive functional group relative to the total mass of the constituent units constituting the polymer (b) is preferably 1 to 20% by mass, more preferably 2 to 10% by mass. By setting the ratio within this range, the degree of crosslinking in the polymer (b) falls within a more preferred range.

[0453] From the viewpoint of improving the film-forming properties of the first energy ray-curable resin composition (x1-2-1), the weight average molecular weight (Mw) of the polymer (b) having no energy ray-curable group is preferably 10,000 to 2,000,000, more preferably 100,000 to 1,500,000.

[0454] The polymer (b) not having an energy-ray curable group may be used alone or in combination of two or more. When two or more polymers (b) not having an energy-ray curable group are used, the combination and ratio thereof may be arbitrarily selected.

[0455] The first energy-ray-curable resin composition (x1-2-1) contains, for example, either or both of the polymer (a1) and the compound (a2).

[0456] When the first energy ray curable resin composition (x1-2-1) contains the compound (a2), it preferably further contains a polymer (b) having no energy ray curable group. In this case, it preferably further contains the polymer (a1).

[0457] The first energy ray-curable resin composition (x1-2-1) may not contain the compound (a2), but may contain the polymer (a1) and the polymer (b) having no energy ray-curable group.

[0458] When the first energy ray-curable resin composition (x1-2-1) contains a polymer (a1), a compound (a2), and a polymer (b) having no energy ray-curable group, the content of the compound (a2) is preferably 10 to 400 parts by mass, and more preferably 30 to 350 parts by mass, relative to the total content of 100 parts by mass of the polymer (a1) and the polymer (b) having no energy ray-curable group.

[0459] The total content of the energy-curable component (a) and the polymer (b) having no energy-curable group is preferably 5 to 90% by mass, more preferably 10 to 80% by mass, and even more preferably 20 to 70% by mass, based on the total amount of the active ingredients of the first energy-curable resin composition (x1-2-1). When the content of the energy-curable component is within this range, the energy-curability of the first energy-curable resin film (x1-2) is further improved.

[0460] The first energy ray-curable resin composition (x1-2-1) may contain, in addition to the energy ray-curable component, one or more selected from the group consisting of a thermosetting component, a curing accelerator, a photopolymerization initiator, a filler, a coupling agent, a cross-linking agent and general additives, depending on the purpose.

[0461] For example, by using a first energy ray curable resin composition (x1-2-1) containing an energy ray curable component and a thermosetting component, the adhesion of the formed first energy ray curable resin film (x1-2) to the adherend is improved by heating, and the strength of the first cured resin film (r1) formed by the first energy ray curable resin film (x1-2) is also improved.

[0462] The thermosetting component, photopolymerization initiator, filler, coupling agent, crosslinker, and general additive in the first energy ray-curable resin composition (x1-2-1) are respectively the same as the thermosetting component (B), curing accelerator (C), photopolymerization initiator (H), filler (D), coupling agent (E), crosslinker (F), and general additive (I) in the first thermosetting resin composition (x1-1-1).

[0463] In the first energy ray-curable resin composition (x1-2-1), the thermosetting component, the photopolymerization initiator, the filler, the coupling agent, the crosslinking agent, and the general additive may be used alone or in combination of two or more. When two or more are used in combination, the combination and ratio thereof may be arbitrarily selected.

[0464] The contents of the thermosetting component, photopolymerization initiator, filler, coupling agent, crosslinking agent, and general additives in the first energy ray-curable resin composition (x1-2-1) can be appropriately adjusted depending on the purpose and are not particularly limited.

[0465] The first energy ray-curable resin composition (x1-2-1) preferably further contains a solvent in order to improve its handleability by dilution.

[0466] The solvent contained in the first energy ray curable resin composition (x1-2-1) is, for example, the same as the solvent in the first thermosetting resin composition (x1-1-1).

[0467] The solvent contained in the first energy-ray-curable resin composition (x1-2-1) may be used alone or in combination of two or more. When two or more solvents are used in combination, the combination and ratio thereof can be arbitrarily selected.

[0468] (Other ingredients)

[0469] The first energy ray-curable resin composition (x1-2-1) and the first energy ray-curable resin film (x1-2) do not correspond to any of the above-mentioned components and may contain other components within a range not impairing the effects of the present invention.

[0470] The first energy ray curable resin composition (x1-2-1) and the first energy ray curable resin film (x1-2) may contain only one other component or two or more other components. In the case of two or more other components, the combination and ratio thereof can be arbitrarily selected.

[0471] The content of the other components in the first energy-ray-curable resin composition (x1-2-1) and the first energy-ray-curable resin film (x1-2) is not particularly limited and can be appropriately selected depending on the intended purpose. (Method for Producing the First Energy-Ray-Curable Resin Composition (x1-2-1))

[0472] The first energy-ray-curable resin composition (x1-2-1) is obtained by mixing the respective components constituting the first energy-ray-curable resin composition. The order of adding the respective components is not particularly limited, and two or more components may be added simultaneously.

[0473] When a solvent is used, the solvent may be mixed with any ingredients other than the solvent beforehand, or the solvent may be mixed with the ingredients without diluting any ingredients other than the solvent beforehand. The method for mixing the ingredients during mixing is not particularly limited, and can be appropriately selected from known methods such as mixing with a rotary stirrer or stirring blade, mixing using a mixer, and mixing with ultrasonics.

[0474] The temperature and time during addition and mixing of the components are not particularly limited and can be adjusted appropriately as long as the components do not deteriorate, but the temperature is preferably 15 to 30°C.

[0475] <First supporting piece (Y1)>

[0476] The first supporting sheet (Y1) functions as a support for supporting the first curable resin (x1).

[0477] like Figure 10 As shown, the first supporting sheet (Y1) can be composed only of the base material 51, as shown in FIG. Figure 11 As shown, it can also be a laminate of a substrate 51 and an adhesive layer 61, such as Figure 12 As shown, a laminated body may be formed by laminating the substrate 51, the intermediate layer 71, and the adhesive layer 61 in this order. The laminated body formed by laminating the substrate 51, the intermediate layer 71, and the adhesive layer 61 in this order is suitable for use as a back grinding sheet (b-BG).

[0478] Hereinafter, the base material of the first support sheet (Y1) and the adhesive layer and the intermediate layer which the first support sheet (Y1) may have will be described.

[0479] (Base material)

[0480] The substrate is in a sheet or film shape, and its constituent materials include, for example, the following various resins.

[0481] Examples of the resin constituting the substrate include polyethylenes such as low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), and high-density polyethylene (HDPE); polyolefins other than polyethylenes such as polypropylene, polybutene, polybutadiene, polymethylpentene, and norbornene resins; ethylene-vinyl acetate copolymers, ethylene-(meth)acrylic acid copolymers, ethylene-(meth)acrylate copolymers, and ethylene-norbornene copolymers (copolymers obtained using ethylene as a monomer); and vinyl chloride-based resins (copolymers obtained using vinyl chloride) such as polyvinyl chloride and vinyl chloride copolymers. Polyester fibers such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polyethylene isophthalate, polyethylene-2,6-naphthoate, and fully aromatic polyester fibers in which all the constituent units have aromatic cyclic groups; copolymers of two or more of the above polyester fibers; poly(meth)acrylates; polyurethanes; polyurethane acrylates; polyimides; polyamides; polycarbonates; fluororesins; polyacetals; modified polyphenylene ethers; polyphenylene sulfides; polysulfones; and polyether ketones.

[0482] The resin constituting the substrate may be, for example, a polymer alloy such as a mixture of the polyester fiber and a resin other than the polyester fiber. The polymer alloy of the polyester fiber and a resin other than the polyester fiber preferably contains a relatively small amount of the resin other than the polyester fiber.

[0483] Examples of the resin constituting the substrate include crosslinked resins obtained by crosslinking one or more of the resins listed above, and modified resins such as ionomers obtained by crosslinking one or more of the resins listed above.

[0484] The resin constituting the substrate may be used alone or in combination of two or more. When two or more resins are used to constitute the substrate, the combination and ratio thereof can be arbitrarily selected.

[0485] The substrate may be a single layer (single layer) or may be a multilayered substrate of two or more layers. In the case of a multilayered substrate, the multilayered substrates may be the same or different from each other, and the combination of the multilayered substrates is not particularly limited.

[0486] The thickness of the substrate is preferably 5 μm to 1,000 μm, more preferably 10 μm to 500 μm, further preferably 15 μm to 300 μm, and most preferably 20 μm to 150 μm.

[0487] Here, the “thickness of the substrate” refers to the thickness of the entire substrate. For example, the thickness of a substrate composed of multiple layers refers to the total thickness of all layers constituting the substrate.

[0488] The substrate is preferably a substrate with high thickness precision, that is, a substrate with suppressed thickness variation at any location. Examples of the above-mentioned materials that can be used to form the substrate with high thickness precision include polyethylene, polyolefins other than polyethylene, polyethylene terephthalate, and ethylene-vinyl acetate copolymer.

[0489] The base material may contain various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, and softeners (plasticizers) in addition to the main constituent materials such as the resin.

[0490] The substrate may be transparent or opaque, may be colored according to the purpose, or may have other layers deposited thereon. Furthermore, when the first curable resin (x1) is a first energy-ray-curable resin film (x1-2) and when the adhesive layer is an energy-ray-curable adhesive layer, the substrate is preferably an energy-ray-transmissive substrate.

[0491] The substrate can be produced by a known method. For example, a substrate containing a resin can be produced by molding a resin composition containing the resin.

[0492] (Adhesive layer)

[0493] The adhesive layer is in a sheet or film form and contains an adhesive.

[0494] Examples of adhesives include acrylic resins (adhesives composed of resins having a (meth)acryloyl group), urethane resins (adhesives composed of resins having a urethane bond), rubber resins (adhesives composed of resins having a rubber structure), silicone resins (adhesives composed of resins having a siloxane bond), epoxy resins (adhesives composed of resins having an epoxy resin group), polyvinyl ether, and polycarbonate. Among these, acrylic resins are preferred.

[0495] It is worth noting that in the present invention, the so-called "adhesive resin" is a concept that includes both resins with adhesive properties and resins with bonding properties. For example, it includes not only resins that have adhesive properties themselves, but also resins that show adhesive properties by being used in combination with other components such as additives, and resins that show adhesive properties due to the presence of triggering factors such as heat or water.

[0496] The adhesive layer may be a single layer (single layer) or may be a plurality of layers. When the adhesive layer is a plurality of layers, the plurality of layers may be the same or different from each other, and the combination of the plurality of layers is not particularly limited.

[0497] The thickness of the adhesive layer is preferably 1 μm to 1000 μm, more preferably 5 μm to 500 μm, and even more preferably 10 μm to 100 μm. Here, the "thickness of the adhesive layer" refers to the thickness of the adhesive layer as a whole. For example, the thickness of an adhesive layer composed of multiple layers refers to the total thickness of all layers constituting the adhesive layer.

[0498] The adhesive layer may be formed using an energy-ray curable adhesive or a non-energy-ray curable adhesive. The adhesive layer formed using an energy-ray curable adhesive can easily adjust the physical properties before and after curing.

[0499] <Middle layer>

[0500] The intermediate layer is in the form of a sheet or film, and its constituent material can be appropriately selected depending on the purpose and is not particularly limited. For example, when the purpose is to suppress deformation of the first cured resin film (r1) by reflecting the shape of bumps present on the semiconductor surface on the protective film covering the semiconductor surface, a preferred constituent material for the intermediate layer is, for example, urethane (meth)acrylate, from the viewpoint of high conformability to uneven surfaces and further improving the adhesion of the intermediate layer.

[0501] The intermediate layer may be a single layer (single layer) or may be a plurality of layers. When the intermediate layer is a plurality of layers, the plurality of layers may be the same as or different from each other, and the combination of the plurality of layers is not particularly limited.

[0502] The thickness of the intermediate layer can be adjusted appropriately depending on the height of the bumps on the semiconductor surface being protected. However, from the perspective of being able to easily absorb the effects of tall bumps at a relatively high height, it is preferably 50 μm to 600 μm, more preferably 70 μm to 500 μm, and even more preferably 80 μm to 400 μm. Here, the term "thickness of the intermediate layer" refers to the thickness of the entire intermediate layer. For example, the thickness of a multi-layer intermediate layer refers to the total thickness of all layers comprising the intermediate layer.

[0503] Next, the method for producing the first laminate (α1) will be described.

[0504] [Method for producing the first laminate (α1)]

[0505] The first stacked body (α1) can be produced by sequentially stacking the above-mentioned layers in a corresponding positional relationship.

[0506] For example, when manufacturing the first supporting sheet (Y1), in the case of laminating an adhesive layer or an intermediate layer on a substrate, the adhesive layer or the intermediate layer can be laminated by applying an adhesive composition or an intermediate layer forming composition on the substrate and drying or irradiating it with energy rays as needed.

[0507] Examples of the coating method include spin coating, spray coating, bar coating, knife coating, roll coating, knife roll coating, blade coating, die coating, and gravure coating.

[0508] On the other hand, for example, when a first curable resin (x1) is laminated on an adhesive layer laminated on a substrate, a first thermosetting resin composition (x1-1-1) or a first energy ray curable resin composition (x1-2-1) can be coated on the adhesive layer to directly form the first curable resin (x1).

[0509] Similarly, when the adhesive layer is laminated on the intermediate layer already laminated on the substrate, the adhesive composition can be applied on the intermediate layer to directly form the adhesive layer.

[0510] In this way, when using several compositions to form a continuous two-layer laminate structure, a further composition can be applied to the layer formed by the composition to form a new layer. However, it is preferred to form a continuous two-layer laminate structure by pre-forming the layer to be laminated using the composition on a separate release film, and then laminating the exposed surface of the release film opposite to the side in contact with the completed layer to the exposed surface of the remaining layer. In this case, the composition is preferably applied to the release-treated surface of the release film. The release film can be removed as needed after the laminate structure is formed.

[0511] [Second laminate (α2)]

[0512] The second stack (α2) is not particularly limited as long as it can form a protective film on the back surface of the semiconductor wafer. For example, the same structure as the first stack (α1) can be employed.

[0513] Therefore, the second curable resin (x2) included in the second laminate (α2) may be made of the same material and structure as the first curable resin (x1).

[0514] (Colorant (J))

[0515] Here, from the perspective of improving the confirmability of the printing formed by laser marking and making the grinding marks on the back of the semiconductor chip difficult to see to improve the creativity of the semiconductor chip, the second curable resin (x2) and the second curable resin forming composition for forming the second curable resin (x2) preferably contain a colorant (J).

[0516] Examples of the colorant (J) include known colorants such as inorganic pigments, organic pigments, and organic dyes.

[0517] Examples of the organic pigments and organic dyes include ammonium pigments, cyanine pigments, merocyanine pigments, cretonate pigments, squalene pigments, azure pigments, polymethyl pigments, naphthoquinone pigments, pyrylium pigments, phthalocyanine pigments, naphthalocyanine pigments, naproxen pigments, azo pigments, condensed azo pigments, indigo pigments, piperidone pigments, perylene pigments, dioxin pigments, quinacridone pigments, isoindolinone pigments, quinophthalone pigments, pyrrole pigments, thioindigo pigments, metal complex pigments (metal complex salt dyes), dithiol metal complex pigments, indolephenolic pigments, triallylmethane pigments, anthraquinone pigments, naphthol pigments, methamidophos pigments, benzimidazolone pigments, indanthrene pigments, and threne pigments.

[0518] Examples of the inorganic pigments include carbon black, cobalt pigments, iron pigments, chromium pigments, titanium pigments, vanadium pigments, zirconium pigments, molybdenum pigments, ruthenium pigments, platinum pigments, ITO (indium tin oxide) pigments, and ATO (antimony tin oxide) pigments.

[0519] The colorant (J) used to form the second curable resin (x2) and the second curable resin-forming composition of the second curable resin (x2) may be one or two or more. When there are two or more colorants (J), the combination and ratio thereof can be arbitrarily selected.

[0520] When a colorant (J) is used, the content of the colorant (J) of the second curable resin (x2) can be appropriately adjusted according to the purpose. For example, as described above, when the second cured resin film (r2) formed by curing the second curable resin (x2) is printed by laser irradiation, the light transmittance of the protective film can be adjusted by adjusting the content of the colorant (J) of the second curable resin (x2), and the print confirmation can be adjusted. In addition, by adjusting the content of the colorant (J), the creativity of the protective film can be improved, making the grinding marks on the back of the semiconductor wafer difficult to see. Taking these points into consideration, in the second curable resin forming composition for forming the second curable resin (x2), the ratio of the content of the colorant (J) relative to the total content of all components other than the solvent (also referred to as the total mass of the solid content of the second curable resin forming composition) (i.e., the content of the colorant (J) of the second curable resin (x2)) is preferably 0.1 to 10% by mass, more preferably 0.1 to 7.5% by mass, and particularly preferably 0.1 to 5% by mass. When the content of the colorant (J) is at least the lower limit, the effect of using the colorant (J) can be more pronounced. Furthermore, when the content of the colorant (J) is at most the upper limit, an excessive decrease in the light transmittance of the second curable resin (x2) can be suppressed.

[0521] It is worth noting that the first curable resin (x1) and the composition for forming the first curable resin may also contain a colorant (J). However, from the perspective of ensuring the verifiability of the planned dividing line of the wafer for manufacturing semiconductor chips, the content of the colorant (J) is preferably within a range that ensures the verifiability of the planned dividing line.

[0522] In addition, the second supporting sheet (Y2) of the second laminate (α2) may be the same structure as the first supporting sheet (Y1). Specifically, the second supporting sheet (Y2) is the same as the first supporting sheet (Y1) and may be composed only of Figure 10 The substrate 51 shown may also be Figure 11 The adhesive sheet of the laminated substrate 51 and the adhesive layer 61 shown may also be Figure 12 The adhesive sheet shown is a laminate of a base material 51, an intermediate layer 71, and an adhesive layer 61.

[0523] The base material, the intermediate layer, and the adhesive layer of the second supporting sheet (Y2) may have the same structure and material as those of the base material, the intermediate layer, and the adhesive layer of the first supporting sheet (Y1).

[0524] Example

[0525] The present invention is specifically described by the following examples, but the present invention is not limited to the following examples. 1. Preparation of wafers for semiconductor chip production

[0526] As a wafer for semiconductor chip production, a 12-inch silicon wafer (wafer thickness 775 μm) cut in half along a planned dividing line was used. The width of the half-cut portion (groove width) of the silicon wafer was 200 μm, and the depth of the groove was 200 μm.

[0527] 2. Application of the first curable resin (x1)

[0528] On the surface side (half-cut forming surface) of a wafer for manufacturing semiconductor chips, a first stack (α1) of a laminated back grinding tape ("E-8510HR" manufactured by Lintec Corporation) and a layer (X1) of a first curable resin (x1) with a thickness of 90 μm is pressed and attached as a first supporting sheet (Y1) with the first curable resin (x1) side as the attachment surface under the following conditions.

[0529] Laminating device: Fully automatic laminating machine (manufactured by Lintec Co., Ltd., product name "RAD-3510")

[0530] Roller pressure: 0.5MPa

[0531] Roller height: -400μm

[0532] ·Paste speed: 5mm / sec

[0533] ·Laminating temperature: 90℃

[0534] It is worth noting that the shear modulus G' of layer (X1) is 1,000Pa.

[0535] The shear modulus G' is measured by the following method.

[0536] For the first curable resin (x1), 10 sheets of the first curable resin (x1) with a thickness of 100 μm were stacked to prepare a layer (X1) of the first curable resin (x1) with a thickness of 1 mm. Then, the first curable resin (x1) was cut into a disk shape with a diameter of 8 mm to obtain a test piece of the layer (X1) of the first curable resin (x1). In addition, a shear viscosity measuring device was used: the setting position of the test piece of the dynamic viscoelasticity measuring device (ARES; manufactured by TA Instruments) was pre-heated at 90°C, the test piece was mounted on the setting position, and the test fixture was pressed on the top of the test piece to fix the test piece in the setting position. Then, under the conditions of a temperature of 90°C and a measurement frequency of 1 Hz, the test piece was strained by 400%, and the shear modulus G' of the test piece was measured.

[0537] The first curable resin (x1) is produced using the first thermosetting resin composition (x1-1-1).

[0538] The components used for preparation of the first thermosetting resin composition (x1-1-1) are as follows.

[0539] Polymer components

[0540] Polymer component (A)-1: an acrylic resin (weight average molecular weight 800,000, glass transition temperature -28°C) copolymerized with butyl acrylate (hereinafter referred to as "BA") (55 parts by mass), acrylic acid ester (hereinafter referred to as "MA") (10 parts by mass), glycidyl methacrylate (hereinafter referred to as "GMA") (20 parts by mass), and 2-hydroxyethyl acrylate (hereinafter referred to as "HEA") (15 parts by mass).

[0541] Epoxy resin

[0542] Epoxy resin (B1)-1: liquid bisphenol F-type epoxy resin ("YL983U" manufactured by Mitsubishi Chemical Corporation); weight average molecular weight = 340.

[0543] Epoxy resin (B1)-2: polyfunctional aromatic epoxy resin ("EPPN-502H" manufactured by Nippon Kayaku Co., Ltd.); weight average molecular weight = 1,000.

[0544] Epoxy resin (B1)-3: dicyclopentadiene-type epoxy resin ("EPICLON HP-7200" manufactured by DIC Corporation); weight average molecular weight = 600.

[0545] Thermal curing agent

[0546] Heat curing agent (B2)-1: Novolac type phenolic resin ("BRG-556" manufactured by Showa Denko K.K.).

[0547] Curing accelerator

[0548] Curing accelerator (C)-1: 2-phenyl-4,5-dihydroxymethylimidazole ("Cresol 2PHZ-PW" manufactured by Shikoku Chemical Industry Co., Ltd.).

[0549] Filling material

[0550] Filler (D)-1: Spherical silica modified with epoxy groups ("Admanano YA050C-MKK" manufactured by Undermatters); 0.05 μm (average particle size); 19% by mass (content in the first thermosetting resin composition (x1-1-1)).

[0551] 100 parts by mass of the polymer component (A)-1, 135 parts by mass of the epoxy resin (B1)-1, 90 parts by mass of the epoxy resin (B1)-2, 150 parts by mass of the epoxy resin (B1)-3, 180 parts by mass of the thermosetting agent (B2)-1, 1 part by mass of the curing accelerator (C)-1, and 160 parts by mass of the filler (D)-1 are dissolved or dispersed in methyl ethyl ketone and stirred at 23°C to prepare a first thermosetting resin composition (x1-1-1) having a solid content concentration of 55% by mass.

[0552] The first thermosetting resin composition (x1-1-1) obtained above is applied to the peeling-treated surface of a peeling film ("SP-PET381031" manufactured by Lintec Co., Ltd., with a thickness of 38 μm) which is a polyethylene terephthalate film and has been peeled-treated on one side by silicone treatment. The film is dried at 100°C for 2 minutes to prepare a first thermosetting resin film (x1-1) with a thickness of 90 μm as the first curable resin (x1).

[0553] Next, the exposed surface of the first curable resin (x1) is bonded to the exposed surface of the adhesive layer of the back grinding tape to obtain a first laminate (α1) in which the back grinding tape, the first curable resin (x1), and the release film are stacked in sequence in the thickness direction.

[0554] When the first laminate (α1) is attached to a wafer for producing a semiconductor chip, the release film is peeled off from the first laminate (α1) to expose the first curable resin (x1).

[0555] 3. Evaluation

[0556] A semiconductor chip fabrication wafer with the first curable resin (x1) applied thereto was heated at 160°C for 1 hour to cure to form a first cured resin film (r1). The wafer was then back-polished to a thickness of 625 μm to a thickness of 150 μm. The back surface and cross-sectional polishing observations were then performed. Cross-sectional polishing observations were performed using an optical microscope (Keyence Corporation, "VHX-1000").

[0557] 4. Results

[0558] Figure 13 The back side observation results are shown. Figure 14 The results of cross-sectional grinding observations are shown. Based on any of the results, it can be confirmed that the first cured resin film (r1) is well embedded in the groove portion 13. Furthermore, based on the cross-sectional grinding observations, it can be confirmed that the coverage of the first cured resin film (r1) on the wafer surface is also good. Based on these results, it can be confirmed that the manufacturing method of the present invention can produce a semiconductor chip in which the bump-forming surface and side surfaces are well covered by the first cured resin film (r1).

[0559] Description of Reference Numerals

[0560] 10: Wafers for semiconductor chip production;

[0561] 11: wafer;

[0562] 11a: bump forming surface;

[0563] 11b: back;

[0564] 12: bump;

[0565] 13: groove;

[0566] 40: semiconductor chips;

[0567] x1: first curable resin;

[0568] r1: first cured resin film;

[0569] X1: layer;

[0570] Y1: first supporting sheet;

[0571] α1: first stack;

[0572] x2: second curable resin;

[0573] r2: second cured resin film;

[0574] X2: layer;

[0575] Y2: second supporting sheet;

[0576] α2: second stack;

[0577] 51: substrate;

[0578] 61: adhesive layer;

[0579] 71: Middle layer.

Claims

1. A method for manufacturing a semiconductor chip, comprising the following steps (S1) to (S4) in sequence: Step (S1): a step of preparing a wafer for semiconductor chip fabrication, wherein grooves serving as planned dividing lines are formed on a bump forming surface of the semiconductor wafer having bumps so as not to reach a back surface; Step (S2): a step of pressing and applying a first curable resin (x1) to the bump-forming surface of the semiconductor chip manufacturing wafer, covering the bump-forming surface of the semiconductor chip manufacturing wafer with the first curable resin (x1), and embedding the first curable resin (x1) in the groove portion formed in the semiconductor chip manufacturing wafer; Step (S3): a step of curing the first curable resin (x1) to obtain a wafer for semiconductor chip production with a first cured resin film (r1); Step (S4): Singulating the semiconductor chip production wafer with the first cured resin film (r1) along the planned dividing lines to obtain semiconductor chips in which at least the bump formation surface and side surfaces are covered with the first cured resin film (r1); After the step (S2) and before the step (S3), after the step (S3) and before the step (S4), or during the step (S4), the following step (S-BG) is further included. Step (S-BG): a step of grinding the back surface of the semiconductor chip fabrication wafer. The step (S2) is performed by pressing and attaching a first laminate (α1) having a laminate structure formed by laminating a first support sheet (Y1) and a layer (X1) of the first curable resin (x1) onto the bump forming surface of the semiconductor chip manufacturing wafer with the layer (X1) as an attaching surface. The step (S-BG) is included after the step (S2) and before the step (S3), The step (S-BG) is performed by grinding the back surface of the semiconductor chip manufacturing wafer with the first stack (α1) attached thereto, and then peeling the first supporting sheet (Y1) from the first stack (α1). The step ( S4 ) is performed by cutting the portion of the first cured resin film ( r1 ) formed in the groove portion of the semiconductor chip fabrication wafer with the first cured resin film ( r1 ) along the planned dividing line.

2. A method for manufacturing a semiconductor chip, comprising the following steps (S1) to (S4) in sequence: Step (S1): a step of preparing a wafer for semiconductor chip fabrication, wherein grooves serving as planned dividing lines are formed on a bump forming surface of the semiconductor wafer having bumps so as not to reach a back surface; Step (S2): a step of pressing and applying a first curable resin (x1) to the bump-forming surface of the semiconductor chip manufacturing wafer, covering the bump-forming surface of the semiconductor chip manufacturing wafer with the first curable resin (x1), and embedding the first curable resin (x1) in the groove portion formed in the semiconductor chip manufacturing wafer; Step (S3): a step of curing the first curable resin (x1) to obtain a wafer for semiconductor chip production with a first cured resin film (r1); Step (S4): Singulating the semiconductor chip production wafer with the first cured resin film (r1) along the planned dividing lines to obtain semiconductor chips in which at least the bump formation surface and side surfaces are covered with the first cured resin film (r1); After the step (S2) and before the step (S3), after the step (S3) and before the step (S4), or during the step (S4), the following step (S-BG) is further included. Step (S-BG): a step of grinding the back surface of the semiconductor chip fabrication wafer. The step (S2) is performed by pressing and attaching a first laminate (α1) having a laminate structure formed by laminating a first support sheet (Y1) and a layer (X1) of the first curable resin (x1) onto the bump forming surface of the semiconductor chip manufacturing wafer with the layer (X1) as an attaching surface. The step (S-BG) is included after the step (S3) and before the step (S4), The step (S3) is performed without peeling the first supporting sheet (Y1) from the first laminate (α1). The step (S-BG) is performed by grinding the back surface of the semiconductor chip manufacturing wafer with the first stack (α1) attached thereto, and then peeling the first supporting sheet (Y1) from the first stack (α1). The step ( S4 ) is performed by cutting the portion of the first cured resin film ( r1 ) formed in the groove portion of the semiconductor chip fabrication wafer with the first cured resin film ( r1 ) along the planned dividing line.

3. A method for manufacturing a semiconductor chip, comprising the following steps (S1) to (S4) in sequence: Step (S1): a step of preparing a wafer for semiconductor chip fabrication, wherein grooves serving as planned dividing lines are formed on a bump forming surface of the semiconductor wafer having bumps so as not to reach a back surface; Step (S2): a step of pressing and applying a first curable resin (x1) to the bump-forming surface of the semiconductor chip manufacturing wafer, covering the bump-forming surface of the semiconductor chip manufacturing wafer with the first curable resin (x1), and embedding the first curable resin (x1) in the groove portion formed in the semiconductor chip manufacturing wafer; Step (S3): a step of curing the first curable resin (x1) to obtain a wafer for semiconductor chip production with a first cured resin film (r1); Step (S4): Singulating the semiconductor chip production wafer with the first cured resin film (r1) along the planned dividing lines to obtain semiconductor chips in which at least the bump formation surface and side surfaces are covered with the first cured resin film (r1); After the step (S2) and before the step (S3), after the step (S3) and before the step (S4), or during the step (S4), the following step (S-BG) is further included. Step (S-BG): a step of grinding the back surface of the semiconductor chip fabrication wafer. The step (S2) is performed by pressing and attaching a first laminate (α1) having a laminate structure formed by laminating a first support sheet (Y1) and a layer (X1) of the first curable resin (x1) onto the bump forming surface of the semiconductor chip manufacturing wafer with the layer (X1) as an attaching surface. The step (S-BG) is included after the step (S3) and before the step (S4), After the step (S2) and before the step (S3), the first supporting sheet (Y1) is peeled off from the first laminate (α1), The step (S-BG) is performed by attaching a back grinding sheet (b-BG) to the surface of the first cured resin film (r1) of the semiconductor chip manufacturing wafer having the first cured resin film (r1), grinding the back surface of the semiconductor chip manufacturing wafer with the back grinding sheet (b-BG) attached thereto, and then peeling the back grinding sheet (b-BG) from the semiconductor chip manufacturing wafer having the first cured resin film (r1). The step ( S4 ) is performed by cutting the portion of the first cured resin film ( r1 ) formed in the groove portion of the semiconductor chip fabrication wafer with the first cured resin film ( r1 ) along the planned dividing line.

4. A method for manufacturing a semiconductor chip, comprising the following steps (S1) to (S4) in sequence: Step (S1): a step of preparing a wafer for semiconductor chip fabrication, wherein grooves serving as planned dividing lines are formed on a bump forming surface of the semiconductor wafer having bumps so as not to reach a back surface; Step (S2): a step of pressing and applying a first curable resin (x1) to the bump-forming surface of the semiconductor chip manufacturing wafer, covering the bump-forming surface of the semiconductor chip manufacturing wafer with the first curable resin (x1), and embedding the first curable resin (x1) in the groove portion formed in the semiconductor chip manufacturing wafer; Step (S3): a step of curing the first curable resin (x1) to obtain a wafer for semiconductor chip production with a first cured resin film (r1); Step (S4): Singulating the semiconductor chip production wafer with the first cured resin film (r1) along the planned dividing lines to obtain semiconductor chips in which at least the bump formation surface and side surfaces are covered with the first cured resin film (r1); After the step (S2) and before the step (S3), after the step (S3) and before the step (S4), or during the step (S4), the following step (S-BG) is further included. Step (S-BG): a step of grinding the back surface of the semiconductor chip fabrication wafer. The step (S2) is performed by pressing and attaching a first laminate (α1) having a laminate structure formed by laminating a first support sheet (Y1) and a layer (X1) of the first curable resin (x1) onto the bump forming surface of the semiconductor chip manufacturing wafer with the layer (X1) as an attaching surface. The step (S4) includes the step (S-BG), After the step (S2) and before the step (S3), the first supporting sheet (Y1) is peeled off from the first laminate (α1), The process (S4) is implemented as follows: after forming a cut along the predetermined dividing line or forming a modified area along the predetermined dividing line in the portion of the first cured resin film (r1) of the wafer for manufacturing a semiconductor chip with the first cured resin film (r1) formed in the groove portion, as the process (S-BG), a back grinding sheet (b-BG) is attached to the surface of the first cured resin film (r1) of the wafer for manufacturing a semiconductor chip with the first cured resin film (r1), and the back side of the wafer for manufacturing a semiconductor chip is ground in the state where the back grinding sheet (b-BG) is attached.

5. The method for manufacturing a semiconductor chip according to any one of claims 1 to 4, wherein: It also includes the following step (T), Step (T): a step of forming a second cured resin film (r2) on the back surface of the semiconductor chip fabrication wafer.

6. The method for manufacturing a semiconductor chip according to any one of claims 1 to 4, wherein: Also comprising the following step (U), Step (U): a step of removing the first cured resin film (r1) covering the top of the bump or the first cured resin film (r1) adhering to a portion of the top of the bump to expose the top of the bump.

7. The method for manufacturing a semiconductor chip according to claim 6, wherein: The step (U) is performed by plasma etching.

8. The method for manufacturing a semiconductor chip according to any one of claims 1 to 4, wherein: Under the conditions of temperature 90° C. and frequency 1 Hz, a strain of 400% is generated in the test piece of the layer (X1). When the shear modulus G′ of the test piece of the layer (X1) is measured by strain dispersion measurement, the shear modulus G′ is 5.0×10 Pa to 1.0×10 6 Pa.

9. The method for manufacturing a semiconductor chip according to any one of claims 1 to 4, wherein: The thickness of the layer (X1) is 10 μm or more and 200 μm or less.

10. The method for manufacturing a semiconductor chip according to any one of claims 1 to 4, wherein: The width of the groove is 10 μm to 2000 μm.

11. The method for manufacturing a semiconductor chip according to any one of claims 1 to 4, wherein: The depth of the groove is 30 μm to 700 μm.

12. The method for manufacturing a semiconductor chip according to any one of claims 1 to 4, wherein: The first cured resin film (r1) is transparent.

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