Mask orientation

Abstract

A method for forming patterned features on a substrate is provided. The method includes the following steps: positioning a plurality of masks arranged in a mask layout above the substrate. The substrate is positioned in a first plane, and the plurality of masks are positioned in a second plane, the plurality of masks in the mask layout have a plurality of edges, each of the plurality of edges extending parallel to the first plane and parallel or perpendicular to alignment features on the substrate, the substrate includes a plurality of partitions, and the plurality of partitions are configured to be patterned by energy directed through the masks arranged in the mask layout. The method further includes the following steps: directing energy to the plurality of partitions through the plurality of masks arranged in the mask layout above the substrate to form a plurality of patterned features in each of the plurality of partitions.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to methods of forming a pattern in a substrate, such as transferring the pattern to the substrate using a mask. Background Art

[0002] A mask is usually used to transfer a pattern to a substrate (such as a semiconductor substrate). For example, photolithography can be used to transfer a pattern in a mask to a photoresist disposed on a substrate. Because the pattern to be formed on the substrate corresponds to the pattern on the mask, the complexity of the pattern to be formed on the substrate directly affects the complexity of forming the corresponding mask, and therefore directly affects the cost of forming the corresponding mask. In addition, when a substrate is processed using a mask with a higher complexity, an increase in the complexity of the mask (such as the number of features) may lead to a reduction in yield compared to a process processed using a mask with a lower complexity.

[0003] Therefore, there is a need for methods and corresponding apparatus that can reduce mask complexity and increase throughput in substrate processing. Summary of the invention

[0004] Embodiments of the present disclosure generally relate to methods for forming patterns in substrates, such as transferring patterns to substrates using masks. In one embodiment, a method for forming patterned features on a substrate is provided. The method comprises the following steps: positioning a plurality of masks arranged in a mask layout above a substrate, wherein the substrate is positioned in a first plane and the plurality of masks are positioned in a second plane, the plurality of masks in the mask layout have a plurality of edges, each of the plurality of edges extending parallel to the first plane and parallel or perpendicular to alignment features on the substrate, the substrate comprising a plurality of areas, the plurality of areas being configured to be patterned by energy directed through the masks arranged in the mask layout, the plurality of areas configured to be patterned being separated from one another by one or more areas that are not configured to be patterned by energy directed through the masks, and each of the plurality of areas configured to be patterned being separated by a shortest distance from a closest area of ​​the plurality of areas configured to be patterned along a direction offset by at least 5 degrees from a direction in the first plane parallel or perpendicular to the alignment features on the substrate. The method further includes the steps of directing energy toward the plurality of partitions through a plurality of masks arranged in a mask layout above the substrate to form a plurality of patterned features in each of the plurality of partitions, wherein a number of the plurality of patterned features formed extending along a direction in the first plane that is within ±2.5 degrees parallel or perpendicular to the alignment feature is greater than a number of the plurality of patterned features formed extending along a direction in the first plane that is not aligned within ±2.5 degrees parallel or perpendicular to the alignment feature.

[0005] In another embodiment, a method for forming patterned features on a substrate is provided. The method includes the following steps: positioning a plurality of masks arranged in a mask layout over a positioned substrate, wherein the substrate is positioned in a first plane and the plurality of masks are positioned in a second plane, the plurality of masks in the mask layout have a plurality of edges, each of the plurality of edges is parallel to the first plane and extends parallel or perpendicular to an alignment feature on the substrate, the substrate includes a plurality of partitions, the plurality of partitions are configured to be patterned by energy directed through the masks arranged in the mask layout, the plurality of partitions configured to be patterned are separated from each other by one or more partitions that are not configured to be patterned by energy directed through the masks, and each of the plurality of partitions configured to be patterned is separated from the closest partition of the plurality of partitions configured to be patterned by a shortest distance along a direction offset by at least 5 degrees from a direction extending parallel, perpendicular, ±30 degrees, ±45 degrees, or ±60 degrees relative to the alignment feature on the substrate in the first plane. The method further includes the following steps: directing energy toward the plurality of partitions through a plurality of masks arranged in a mask layout above the substrate to form a plurality of patterned features in each of the plurality of partitions, wherein a number of the plurality of patterned features formed extending along a direction in the first plane that is within ±2.5 degrees of parallel, perpendicular, ±30 degrees, ±45 degrees, or ±60 degrees relative to an alignment feature is greater than a number of the plurality of patterned features formed extending along a direction in the first plane that is not aligned within ±2.5 degrees of parallel, perpendicular, ±30 degrees, ±45 degrees, or ±60 degrees relative to the alignment feature.

[0006] In another embodiment, a method for forming a grating on a substrate is provided. The method includes the following steps: positioning a plurality of masks arranged in a mask layout over a positioned substrate, wherein the substrate is positioned in a first plane and the plurality of masks are positioned in a second plane, the plurality of masks in the mask layout have a plurality of edges, each of the plurality of edges is parallel to the first plane and extends parallel or perpendicular to an alignment feature on the substrate, the substrate includes a plurality of partitions, the plurality of partitions are configured to be patterned by energy directed through the masks arranged in the mask layout, the plurality of partitions configured to be patterned are separated from each other by one or more partitions that are not configured to be patterned by energy directed through the masks, and each of the plurality of partitions configured to be patterned is separated from the closest partition of the plurality of partitions configured to be patterned by a shortest distance along a direction offset by at least 5 degrees from a direction extending parallel or perpendicular to the alignment feature on the substrate in the first plane. The method further includes the steps of directing energy toward the plurality of partitions through a plurality of masks arranged in a mask layout above the substrate to form a plurality of gratings in each of the plurality of partitions, wherein a number of the plurality of gratings formed extending along a direction in the first plane that is within ±2.5 degrees parallel or perpendicular to the alignment feature is greater than a number of the plurality of gratings formed extending along a direction in the first plane that is not aligned within ±2.5 degrees parallel or perpendicular to the alignment feature. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] As a means of understanding the above-described features of the present disclosure in more detail, a specific representation of the present disclosure briefly summarized above may be obtained by reference to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate only typical embodiments of the present disclosure and therefore should not be considered as limiting the scope of the present disclosure, as the present disclosure may admit of other equally effective embodiments.

[0008] FIG. 1A is a top view of three masks arranged above a substrate according to a conventional patterning process.

[0009] FIG. 1B shows an enlarged view of an output patterned subregion of the output coupling region from FIG. 1A .

[0010] Figure 2A is a top view of four masks arranged above a substrate according to one embodiment.

[0011] Figure 2B Indicates from Figure 2A A magnified view of the output patterning partitioning of the output coupling region of the substrate.

[0012] Figure 3 According to one embodiment, a method for forming Figure 2AA process flow chart of a method for patterning features of each patterned partition is shown.

[0013] For ease of understanding, the same reference numerals are used to represent the same elements in the drawings, where possible. It is expected that the elements disclosed in one embodiment can be advantageously used in other embodiments without repetition. Unless otherwise specified, the drawings cited herein should not be understood as being drawn to scale. Furthermore, for clear presentation and explanation, the drawings are usually simplified and details or parts are omitted. The drawings and discussion are used to explain the principles discussed below, where the same reference numerals represent the same elements. DETAILED DESCRIPTION

[0014] Embodiments of the present disclosure are generally directed to methods of forming patterns in substrates, such as transferring the pattern to the substrate using a mask. Although described below with respect to improved methods of forming waveguide combiners, improvements to these methods are also applicable to many other methods of using masks or reticles to produce patterns, including but not limited to lithography such as optical lithography or ultraviolet lithography such as extreme UV lithography and lithography using other parts of the electromagnetic spectrum such as infrared or X-rays.

[0015] FIG. 1A is a top view of three masks 151-153 arranged above a substrate 100 according to a conventional patterning process. The substrate 100 includes a waveguide combiner 101. The waveguide combiner 101 can be used in an augmented reality device (not shown). The waveguide combiner 101 includes an input coupling region 110, an intermediate coupling region 120, and an output coupling region 130. The intermediate coupling region 120 may also be referred to as an exit pupil expansion region. Although not shown, in some embodiments, the functions of the intermediate coupling region 120 and the output coupling region 130 may be designed and located in the same region. The coupling regions 110, 120, 130 are used to couple light passing through the waveguide combiner 101 so that an image can be displayed to a user of the augmented reality device. The coupling regions 110, 120, 130 include pattern features to couple light passing through the waveguide combiner 101. The pattern features include, but are not limited to, pillars (such as round pillars and elongated pillars) and gratings (such as line / space gratings). These patterned features can be oriented at various angles relative to a reference line in the plane of the substrate on which the patterned features are to be formed. For example, if the substrate is considered to be positioned in the XY plane and wherein the thickness of the substrate extends in the Z direction, the patterned features can be oriented at any angle from 0 degrees to 90 degrees relative to the reference line in the XY plane. In addition, some embodiments may include multiple patterned features oriented at different angles from one another without a specific relationship determining the differences between these angles. The size of the patterned features may also vary. In some embodiments, the size of the patterned features may vary, for example from about 10 nm to about 5 um, depending on the critical dimension of the element being formed. The grating includes tilted features arranged in a plurality of patterns across the coupling regions 110, 120, 130.

[0016] The input coupling region 110 is configured to receive incident light and transmit the light to the intermediate coupling region 120. The input coupling region 110 includes an input patterned partition 112, which includes a first plurality of patterned features 114. In some embodiments, the plurality of patterned features 114 may include a plurality of gratings. The plurality of patterned features 114 may be arranged across the input patterned partition 112 to extend in a direction defined by the input coupling region angle 114A. In some embodiments, the input coupling region 110 may include additional patterned features (not shown) outside of the input patterned partition 112. These additional patterned features may be aligned along one or more angles different from the input coupling region angle 114A.

[0017] The intermediate coupling region 120 is configured to receive light from the input coupling region 110 and transmit the light to the output coupling region 130. The intermediate coupling region 120 includes an intermediate patterned partition 122, which includes a plurality of patterned features 124. In some embodiments, the plurality of patterned features 124 may include a plurality of gratings. The plurality of patterned features 124 may be arranged across the intermediate patterned partition 122 to extend in a direction defined by the intermediate coupling region angle 124A. In some embodiments, the intermediate coupling region 120 may include additional patterned features (not shown) outside of the intermediate patterned partition 122. These additional patterned features may be aligned along one or more angles different from the intermediate coupling region angle 124A.

[0018] The output coupling region 130 is configured to receive light from the intermediate coupling region 120 and output an image from the output coupling region 130. The output coupling region 130 includes an output patterned partition 132, which includes a plurality of patterned features 134. In some embodiments, the plurality of patterned features 134 may include a plurality of gratings. The plurality of patterned features 134 may be arranged across the output patterned partition 132 to extend in a direction defined by the output coupling region angle 134A. In some embodiments, the output coupling region 130 may include additional patterned features (not shown) outside of the output patterned partition 132. These additional patterned features may be aligned along one or more angles different from the output coupling region angle 134A.

[0019] Three masks 151-153 may be positioned over the waveguide combiner 101. The first mask 151 may be positioned over the input coupling region 110 and the first portion 1201 of the intermediate coupling region 120. The second mask 152 may be positioned over the second portion 1202 of the intermediate coupling region 120. The third mask 153 may be positioned over the output coupling region 130.

[0020] The waveguide combiner 101 is positioned in a first orientation relative to the notch 105 in the substrate 100. The notch 105 in the substrate 100 can be used to position the substrate 100 in the first position, the notch being aligned with the Y axis in the first position. In the first orientation, the input coupling region 110 is spaced apart from the intermediate coupling region 120 in the Y direction. Additionally, in the first orientation, the output coupling region 130 is spaced apart from the intermediate coupling region 120 in the X direction. In some embodiments, the X and Y axes can correspond to axes on an apparatus (e.g., a lithographic apparatus) used to form patterned features on the waveguide combiner. When the substrate 100 is in the first position, when the masks 151-153 are positioned over the coupling regions 110, 120, 130, the patterns in the masks 151-153 are formed to correspond to the patterned features 114, 124, 134 on the respective coupling regions 110, 120, 130. Furthermore, the masks 151 - 153 may also include patterns to form additional patterned features (not shown) as described above that may be located in the coupling regions 110 , 120 , 130 .

[0021] FIG. 1B shows an enlarged view of the output patterned subarea 132 from the output coupling region 130 of FIG. 1A . FIG. 1B further shows an exemplary electron beam exposure shot 153M that can be used to make a pattern in a third mask 153 corresponding to the patterned features 134 in the output patterned subarea 132. The patterned features 134 are aligned along the output coupling region angle 134A. The output coupling region angle 134A is about 37 degrees relative to the Y axis (i.e., the direction in which the notch 105 points). Equipment for making masks can operate efficiently along standard angles (such as 0 degrees, ±45 degrees, and 90 degrees) and relative standard angles (such as ±30 degrees and ±60 degrees). For example, equipment for making masks can generally use a smaller number of larger electron beam exposure beams to form patterns in masks within about ±2.5 degrees of these standard angles and relative standard angles. Conversely, the same equipment cannot produce patterns in the mask with the same efficiency along non-standard angles (i.e., angles that are at least ±2.5 degrees offset from the above standard angles and relative to the standard angles. Therefore, a greater number of smaller electron beam exposure beams are required to produce patterns along these non-standard angles.

[0022] Because patterned features 134 are aligned along a non-standard angle of 37 degrees, a greater number of smaller electron beam exposure beams are required to achieve an acceptable pattern in the third mask 153, which can then be used to form patterned features 134 within design specifications (e.g., acceptable line edge roughness of patterned features 134). When attempting to form a pattern in a mask along a non-standard angle (such as 37 degrees) using a smaller number of larger electron beam exposure beams, a staircase effect occurs in the newly manufactured mask. This staircase effect in the newly manufactured mask then leads to a corresponding staircase effect in the pattern on the element formed using the newly manufactured mask. Therefore, a greater number of smaller electron beam shots are required to manufacture a mask having a pattern aligned along a non-standard angle (such as 37 degrees). This greater number of smaller electron beam shots may significantly reduce the yield of manufacturing masks, resulting in increased costs. Therefore, a solution is needed to avoid the problems associated with forming patterns in masks along non-standard angles as described above.

[0023] Figure 2A 1 is a top view of four masks 251-254 arranged above a substrate 200 according to one embodiment. The substrate 200 includes the waveguide combiner 101 described above with reference to FIG. 1A. The substrate 200 is similar to the substrate 100 (FIG. 1A), except that the waveguide combiner 101 is positioned in a second orientation relative to the notch 105 when compared to the first orientation of the waveguide combiner 101 relative to the notch 105 shown in FIG. 1A. In this second orientation, the patterned features 114, 124, 134 of the coupling regions 110, 120, 130 are substantially aligned with the X-axis. As used herein, substantially aligned with an axis or angle refers to features that are aligned within about ±2.5 degrees of the axis or angle.

[0024] Positioning the waveguide combiner 101 on the substrate 200 in this second orientation causes the patterned regions 112, 122, 132 to be separated from each other in a direction substantially offset from the X-axis or the Y-axis. As used herein, a direction substantially offset from an axis refers to a direction extending at an angle of at least 5 degrees offset from the axis. For example, on the substrate 200, the input pattern partition 112 of the input coupling region 110 is separated from the intermediate pattern partition 122 of the intermediate coupling region 120 by a portion of the non-patterned partition 107 in a first direction D1 in the XY plane, the first direction D1 being offset by at least 5 degrees from the X-axis and at least 5 degrees from the Y-axis. The first direction D1 may be a direction along which the shortest distance between the input coupling region 110 and the intermediate coupling region 120 is located. Similarly, the intermediate patterned partition 122 of the intermediate coupling device 120 is separated from the output patterned partition 132 of the output coupling region 130 by another portion of the non-patterned partition 107 in a second direction D2 in the XY plane, and the second direction D2 is offset by at least 5 degrees from the X axis and at least 5 degrees from the Y axis. The second direction D2 may be a direction along which the shortest distance between the intermediate coupling region 120 and the output coupling region 130 is located. In some embodiments, the first direction D1 may be perpendicular to the second direction D2.

[0025] Four masks 251-254 can be positioned over the waveguide combiner 101 of the substrate 200. The first mask 251 can be positioned over the input coupling region 110 and the first portion 1201 of the intermediate coupling region 120. The second mask 252 can be positioned over the second portion 1202 of the intermediate coupling region 120. The third mask 253 can be positioned over the third portion 1203 of the intermediate coupling region 120 and the first portion 1301 of the output coupling region 130. The fourth mask 254 can be positioned over the second portion 1302 of the output coupling region 130. In some embodiments, each mask 251-254 can include an edge aligned with the Y axis (e.g., edge 252 E1 ) and an edge aligned with the X axis (such as edge 252 E2 ). In addition, in some embodiments, each edge of one or more masks 251-254 (such as all masks 251-254) is aligned with one of the Y axis or the X axis.

[0026] Figure 2B Indicates from Figure 2A FIG. 1 is an enlarged view of the output patterned partition 132 of the output coupling region 130 of the substrate 200 . Figure 2BFurther showing an exemplary electron beam exposure beam 253M, the electron beam exposure beam 253M can be used to make a pattern in the third mask 253 corresponding to the patterned feature 134. The patterned feature 134 is substantially aligned with the X axis. When the patterned features are substantially aligned along standard angles (such as 0 degrees, ±45 degrees, and 90 degrees) and relative standard angles (such as ±30 degrees and ±60 degrees), a smaller number of larger electron beam exposure beams can be used to form a pattern in the mask. For example, Figure 2B The exemplary electron beam exposure beam 253M of is aligned along a standard angle of 90 degrees relative to the Y axis and the direction in which the notch 105 is pointing. Thus, Figure 2B The electron beam emission 253M is substantially larger than the exemplary electron beam exposure beam 153M of FIG. 1B aligned along a non-standard angle of 37 degrees. In addition, the substantially larger electron beam emission 253M allows substantially fewer electron beam emissions to be used to form the pattern in the mask 253 relative to the pattern in the mask 153, which can result in significant cost reduction. This cost reduction allowed by forming the pattern in the mask along standard and relatively standard angles can be a 10-fold or more cost reduction compared to forming the pattern in the mask along a non-standard angle (such as 37 degrees).

[0027] Because the cost reduction for patterning in a mask along standard and relative standard angles is so high (e.g., ten times), significant cost savings can be achieved even if more masks are used. Figure 2A 1A shows a layout using four masks 251-254 and FIG. 1A shows a layout using three masks 151-153. The layout of four masks 251-254 still results in significant cost savings relative to the layout of three masks 153, because the cost of each of the masks 151-153 shown in FIG. 1A is lower than that of the other masks 151-153. Figure 2A The cost of the masks 251-254 shown in FIG. 5 is much higher (up to ten times).

[0028] Figure 3 According to one embodiment, a method for forming Figure 2A A process flow diagram of a method 1000 for patterning features 114, 124, 134 of respective patterned zones 112, 122, 132 is shown. The method 1000 is described with reference to FIGS. 1A, 1B, 2A, 2B, and 3 .

[0029] The method 1000 begins at block 1002 by analyzing an initial layout of a plurality of components to be formed on a substrate relative to alignment features on the substrate, such as recesses 105. Each of the plurality of components in the layout may include a plurality of patterned features, wherein the plurality of components are separated from each other by one or more unpatterned partitions 107 as described above.

[0030] For example, referring to FIG. 1A , the orientation of the patterned features 114, 124, 134 (multiple patterned features) of the coupling regions 110, 120, 130 (multiple components) can be analyzed to determine an angle at which the patterned features 114, 124, 134 extend in the XY plane relative to the direction in which the recess 105 points in the XY plane. In addition, one or more unpatterned partitions 107 separate the coupling regions 110, 120, 130 (multiple components) from each other. The coupling regions 110, 120, 130 are also arranged along the directions D1, D2 in the XY plane (see FIG. 1A ). Figure 2A ) are separated from each other, and the directions D1 and D2 are parallel (Y direction) and perpendicular (X direction) to the direction (Y direction) pointed by the notch 105 in the XY plane.

[0031] The analysis can determine whether more patterned features in the coupling regions 110, 120, 130 (parts) are aligned in the XY plane within about ±2.5 degrees of one or more standard angles (e.g., 0 degrees, ±45 degrees, and 90 degrees) and / or one or more relative standard angles (e.g., ±30 degrees and ±60 degrees) relative to the direction in which the notch 105 points in the XY plane. For example, referring to FIG. 1A, the layout of the coupling regions 110, 120, 130 can be analyzed to determine that the patterned features 114, 124, 134 are oriented in the XY plane at about 37 degrees relative to the direction in which the notch 105 points in the XY plane, which is not within ±2.5 degrees of one or more standard angles or relative standard angles.

[0032] If the analysis of block 1002 determines that the number of patterned features in the coupling regions 110, 120, 130 (multiple components) that are aligned within about ±2.5 degrees of one or more standard angles (e.g., 0 degrees, ±45 degrees, and 90 degrees) and / or one or more relative standard angles (e.g., ±30 degrees and ±60 degrees) in the XY plane relative to the direction in which the notch 105 points in the XY plane is greater than the number of patterned features that are not aligned according to those constraints, then method 1000 can end. On the other hand, as is the case shown in FIG. 1A , if the analysis of block 1002 determines that the number of patterned features in the coupling regions 110 , 120 , 130 (multiple components) that are not aligned within approximately ±2.5 degrees of one or more standard angles (e.g., 0 degrees, ±45 degrees, and 90 degrees) and / or one or more relative standard angles (e.g., ±30 degrees and ±60 degrees) in the XY plane relative to the direction in which the recess 105 points in the XY plane is greater than the number of patterned features aligned according to those constraints, then method 1000 continues at block 1004.

[0033] At block 1004, the layout of the coupling regions 110, 120, 130 (multiple features) is rotated relative to the notch 105 so that more patterned features in the coupling regions 110, 120, 130 (multiple features) are aligned within about ±2.5 degrees of one or more standard angles (e.g., 0 degrees, ±45 degrees, and 90 degrees) and / or one or more relative standard angles (e.g., ±30 degrees and ±60 degrees) relative to the direction in which the notch 105 points, compared to the number of patterned features that are not aligned according to those constraints. For example, Figure 2A An example is provided of how the layout of the coupling regions 110, 120, 130 (multiple features) can be rotated relative to the notch 105 and the layout of Figure 1 A. This rotation results in more patterned features in the coupling regions 110, 120, 130 (multiple features) being aligned within about ±2.5 degrees of the standard angle and relative to the standard angle (as described above) relative to the direction in which the notch 105 is pointing when compared to the number of patterned features that are not aligned according to those constraints.

[0034] The rotation at block 1004 results in each coupling region 110, 120, 130 being separated by a shortest distance from the nearest coupling region 110, 120, 130 along a direction in the XY plane that is substantially offset (i.e., offset by 5 degrees or more) from a direction parallel or perpendicular to the direction in which the notch 105 points in the XY plane. Figure 2A As shown, the coupling regions 110 and 120 are separated from each other by the shortest distance along the direction D1 in the XY plane, and the direction D1 is substantially offset from a direction parallel to or perpendicular to the direction (Y direction) in which the notch 105 is pointed in the XY plane. Similarly, the coupling regions 120 and 130 are separated from each other by the shortest distance along the direction D2 in the XY plane, and the direction D2 is substantially offset from a direction parallel to or perpendicular to the direction (Y direction) in which the notch 105 is pointed in the XY plane.

[0035] At block 1006, a mask layout comprising a plurality of masks is determined for the component layout of the coupling regions 110, 120, 130 relative to the notch 105 determined at block 1004. The mask layout may be determined for a rectangular mask having edges extending parallel and perpendicular to the direction in which the notch is pointing. For example, Figure 2A 1004. Indicates the layout of rectangular masks 251-254 to be disposed over the component layout of the coupling regions 110, 120, 130 relative to the notches determined at block 1004. In addition, Figure 2B Indicates the edges of the rectangular masks 251-254 (such as edge 252 E1 , 252 E2 ) extends parallel and perpendicular to the direction in which the notch 105 points. Although the individual masks 251-254 are rectangular, the overall shape of the mask layout can be a non-rectangular shape, such as an L-shape or a T-shape. In some embodiments, Figure 2B In the embodiment shown in FIG. 1 , the overall shape of the mask layout may be an irregular shape.

[0036] At block 1008, reference Figure 2A , masks 251-254 are positioned over substrate 200 with the mask layout determined at block 1006. Substrate 200 may be described as being positioned in a first XY plane, and masks 251-254 may be described as being positioned in a second XY plane. The first XY plane may be parallel to the second XY plane. Masks 251-254 may each have an edge (e.g., edge 252) extending parallel or perpendicular to the alignment features (i.e., recess 105) on substrate 200 in the second XY plane. E1 , 252 E2 ).

[0037] At block 1010, reference Figure 2A , directing energy (e.g., visible light or UV energy) through masks 251-254 in a mask layout positioned above substrate 200 as described in block 1008 to form a plurality of patterned features, the plurality of patterned features including the plurality of patterned features 114, 124, 134 in patterned regions 110, 120, 130. At block 1010, a number of the plurality of patterned features formed that extend along directions within ±2.5 degrees of parallel, perpendicular, ±30 degrees, ±45 degrees, or ±60 degrees relative to an alignment feature (e.g., notch 105) in a first XY plane is greater than a number of the plurality of patterned features formed that extend along directions in the first XY plane that are not aligned within ±2.5 degrees of parallel, perpendicular, ±30 degrees, ±45 degrees, or ±60 degrees relative to an alignment feature. For example, Figure 2A The plurality of patterned features 114, 124, 134 extend perpendicular to the direction the notch points in. In addition, although the coupling regions 110, 120, 130 may include other patterned features (not shown) extending in other directions, the plurality of patterned features 114, 124, 134 outnumber these other features.

[0038] In general, although at first glance, compared to the mask layout shown in FIG. 1A , Figure 2A The mask layout shown in the figure appears somewhat staggered and random, but Figure 2A The mask layout in FIG. 1 and the related processes described in method 1000 can significantly reduce the costs associated with producing patterned features on a substrate (such as forming a grating for a waveguide combiner). In addition, although only three masks are used compared to FIG. 1A , Figure 2A indicates that four masks are used, but Figure 2A The cost of each mask shown in FIG. 1A can be much lower (eg, ten times lower) than the cost of each mask shown in FIG. 1A , so that Figure 2A The total cost of the four masks is significantly lower than the cost of the masks shown in FIG. 1A . Figure 2A This reduction in capital cost of the illustrated embodiments ultimately reduces the cost of devices (eg, waveguide combiners) produced by using these masks.

[0039] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the true scope of the disclosure, the scope of which is determined by the claims that follow.

Claims

1. A method for forming a patterned feature on a substrate, comprising the following steps: A plurality of masks are positioned over the substrate based on a mask layout, wherein When the plurality of masks are positioned according to the mask layout, the substrate is positioned in a first plane and the plurality of masks are positioned in a second plane, The plurality of masks in the mask layout have a plurality of edges, each of the plurality of edges extending parallel to the first plane and parallel or perpendicular to an alignment feature on the substrate, the substrate comprising a plurality of partitions configured to be patterned by energy directed through the plurality of masks arranged in the mask layout, The plurality of subareas configured to be patterned are separated from one another by one or more subareas not configured to be patterned by energy directed through the plurality of masks, and each of the plurality of zones configured to be patterned is separated from a nearest zone of the plurality of zones configured to be patterned by a shortest distance along a direction offset by at least 5 degrees from a direction in the first plane, the direction in the first plane extending parallel or perpendicular to the alignment features on the substrate; and When the plurality of masks are positioned over the substrate according to the mask layout, energy is directed through the plurality of masks toward the plurality of partitions, the directed energy forming a plurality of patterned features in each of the plurality of partitions, wherein The number of the plurality of patterned features formed extending along directions in the first plane that are within ±2.5 degrees parallel or perpendicular to the alignment features is greater than the number of the plurality of patterned features formed extending along directions in the first plane that are not aligned within ±2.5 degrees parallel or perpendicular to the alignment features. 2 . The method of claim 1 , wherein the energy directed through the plurality of masks comprises one or more of visible light or ultraviolet energy. The method of claim 1 , wherein the plurality of masks are simultaneously positioned over the substrate according to the mask layout. The method of claim 1 , wherein the plurality of masks comprises three or more masks. The method of claim 1 , wherein each mask of the plurality of masks has a rectangular shape.

6. The method of claim 5, wherein an overall shape formed by the plurality of masks in the mask layout is non-rectangular.

7. The method of claim 5, wherein an overall shape formed by the plurality of masks in the mask layout is an irregular shape.

8. A method for forming a patterned feature on a substrate, comprising the steps of: A plurality of masks are positioned over the substrate based on a mask layout, wherein When the plurality of masks are positioned according to the mask layout, the substrate is positioned in a first plane and the plurality of masks are positioned in a second plane, The plurality of masks in the mask layout have a plurality of edges, each of the plurality of edges extending parallel to the first plane and parallel or perpendicular to an alignment feature on the substrate, the substrate comprising a plurality of partitions configured to be patterned by energy directed through the plurality of masks arranged in the mask layout, The plurality of zones configured to be patterned are separated from one another by one or more zones not configured to be patterned by the energy directed through the plurality of masks, and each of the plurality of zones configured to be patterned is separated by a shortest distance from a nearest zone of the plurality of zones configured to be patterned along a direction offset by at least 5 degrees from a direction in the first plane, the direction in the first plane extending parallel, perpendicular, ±30 degrees, ±45 degrees, or ±60 degrees relative to the alignment feature on the substrate; and When the plurality of masks are positioned over the substrate according to the mask layout, energy is directed through the plurality of masks toward the plurality of partitions, the directed energy forming a plurality of patterned features in each of the plurality of partitions, wherein The number of the plurality of patterned features formed extending along a direction in the first plane that is parallel, perpendicular, within ±2.5 degrees of ±30 degrees, ±45 degrees, or ±60 degrees relative to the alignment feature is greater than the number of the plurality of patterned features formed extending along a direction in the first plane that is not aligned within ±2.5 degrees of parallel, perpendicular, ±30 degrees, ±45 degrees, or ±60 degrees relative to the alignment feature.

9. The method of claim 8, wherein the energy directed through the plurality of masks comprises one or more of visible light or ultraviolet energy.

10. The method of claim 8, wherein the plurality of masks are simultaneously positioned over the substrate according to the mask layout. The method of claim 8 , wherein the plurality of masks comprises three or more masks.

12. The method of claim 8, wherein each mask of the plurality of masks has a rectangular shape.

13. The method of claim 12, wherein an overall shape formed by the plurality of masks in the mask layout is non-rectangular.

14. The method of claim 12, wherein an overall shape formed by the plurality of masks in the mask layout is an irregular shape.

15. A method for forming a grating on a substrate, comprising the following steps: A plurality of masks are positioned over the substrate based on a mask layout, wherein When the plurality of masks are positioned according to the mask layout, the substrate is positioned in a first plane and the plurality of masks are positioned in a second plane, The plurality of masks in the mask layout have a plurality of edges, each of the plurality of edges extending parallel to the first plane and parallel or perpendicular to an alignment feature on the substrate, the substrate comprising a plurality of partitions configured to be patterned by energy directed through the plurality of masks arranged in the mask layout, The plurality of subareas configured to be patterned are separated from one another by one or more subareas not configured to be patterned by the energy directed through the plurality of masks, and each of the plurality of zones configured to be patterned is separated from a nearest zone of the plurality of zones configured to be patterned by a shortest distance along a direction offset by at least 5 degrees from a direction in the first plane, the direction in the first plane extending parallel or perpendicular to the alignment features on the substrate; and When the plurality of masks are positioned over the substrate according to the mask layout, energy is directed through the plurality of masks toward the plurality of partitions, the directed energy forming a plurality of gratings in each of the plurality of partitions, wherein The number of the plurality of gratings formed by extending along directions in the first plane that are parallel or perpendicular to the alignment feature within ±2.5 degrees is greater than the number of the plurality of gratings formed by extending along directions in the first plane that are not aligned within ±2.5 degrees parallel or perpendicular to the alignment feature.

16. The method of claim 15, wherein the plurality of sectors include an input coupling region, an intermediate coupling region, and an output coupling region.

17. The method according to claim 16, wherein The intermediate coupling region is the partition closest to the input coupling region, and The shortest distance between the intermediate coupling region and the input coupling region extends along a first direction.

18. The method according to claim 17, wherein: The intermediate coupling region is the partition closest to the output coupling region, and The shortest distance between the intermediate coupling region and the input coupling region extends along the second direction. The method of claim 18 , wherein the first direction is perpendicular to the second direction.

20. The method of claim 15, wherein the plurality of masks are simultaneously positioned over the substrate according to the mask layout.

Images