A method for preparing a flexible GaSb thin film

Abstract

The present invention discloses a method for preparing a flexible GaSb thin film. The key points of the technical solution are as follows: The method for preparing a flexible GaSb thin film includes the following steps: Step 1: Inject Al ions into the end face of a GaSb wafer; Step 2: Inject O ions into the end of the GaSb wafer, and the depth of the O ions is the same as that of the Al ions; Step 3: Inject Al ions into the side wall of the GaSb wafer; Step 4: Inject O ions at the side wall position of the GaSb wafer on the side where Al ions are injected, and the position of the O ions is the same as that of the Al ions injected in Step 3; Step 5: Anneal the GaSb wafer at a high temperature in an annealing furnace; Step 6: Adhere a flexible substrate to the ion implantation surface of the GaSb wafer; Step 7: Tear off the surface layer of the GaSb wafer, starting from the positions where Al ions and O ions are injected into the side wall of the GaSb wafer, to form a GaSb thin film. The present invention realizes the formation of an oxidation brittle layer inside and on the side wall of the GaSb wafer, and uses the oxidation brittle layer on the side wall position as the starting point for tearing and cracking to tear off the GaSb thin film from the GaSb wafer, thus completing the preparation of the GaSb thin film.

Description

Technical Field

[0001] The present invention relates to the field of GaSb thin films, and particularly to a method for preparing flexible GaSb thin films. Background Art

[0002] The GaSb semiconductor material is one of the important III-V semiconductor materials. Its lattice can match different ternary and multi-component compounds, and its bandwidth can cover 0.3 - 1.58 eV, corresponding to wavelengths of 0.8 μm - 4.3 μm. It is one of the main materials used to prepare long-wavelength lasers and detectors.

[0003] If the GaSb material can be prepared into high-quality flexible single-crystal thin films, it will have important application value in wearable medical detection. However, currently, the GaSb materials on the market are all sold in bulk form, and it is difficult to make the existing GaSb materials flexible.

[0004] Therefore, it is necessary to develop a preparation process for GaSb flexible thin films to overcome the above defects. Summary of the Invention

[0005] The purpose of the present invention is to provide a method for preparing flexible GaSb thin films, which realizes the formation of an oxidation brittle layer inside and on the side walls of a GaSb wafer, and uses the oxidation brittle layer on the side wall position as the starting point for tearing and cracking to tear the GaSb thin film from the GaSb wafer to complete the preparation of the GaSb thin film.

[0006] The further setting of the present invention is as follows: The above technical purpose of the present invention is achieved through the following technical solutions: A method for preparing flexible GaSb thin films includes the following steps:

[0007] Step 1: Inject Al ions into the GaSb wafer, and the Al ions enter from the end face position of the GaSb wafer;

[0008] Step 2: Inject O ions into the GaSb wafer, the O ions enter from the end face position of the GaSb wafer, and the injected O ions have the same depth as the Al ions;

[0009] Step 3: Inject Al ions at the side wall position of the GaSb wafer, and Al is located at one edge position of the GaSb wafer;

[0010] Step 4: Inject O ions at the side wall position of the GaSb wafer on the side where Al ions are injected, and the O ions are in the same position as the Al ions injected in Step 3;

[0011] Step 5: Put the GaSb wafer into an annealing furnace for high-temperature annealing. After completion, let it stand and cool down to room temperature. After high-temperature annealing at the positions where Al ions and O ions are injected into the GaSb wafer, an oxidation brittle layer is formed by oxidation;

[0012] Step 6: Adhere the flexible substrate to the corresponding ion implantation surface position of the GaSb wafer;

[0013] Step 7: After the flexible substrate adheres firmly, tear off the surface layer of the GaSb wafer near the position attached to the flexible substrate, start tearing from the position where Al ions and O ions are implanted on the side wall of the GaSb wafer, and form a GaSb thin film.

[0014] A further setting of the present invention is that in Step 1, the Al ion implantation energy is 50 - 200 keV, and the implantation dose is 1×10 16 -1×10 17 / cm 2 ; in Step 2, the implantation energy range of O ions is 50 - 200 keV, and the O ions and Al ions are located at the same depth position on the end face of the GaSb wafer.

[0015] A further setting of the present invention is that in Step 3, the Al ion implantation energy is 50 - 200 keV, and the implantation dose is 1×10 16 -1×10 17 / cm 2 ; in Step 4, the implantation energy range of the implanted O ions is 50 - 200 keV.

[0016] A further setting of the present invention is that in Step 5, the annealing temperature of the annealing furnace is 100 - 300 °C, the annealing time is 10 - 60 minutes, and the cooling method is natural cooling.

[0017] A further setting of the present invention is that in Step 6, the flexible substrate is one or a combination of dimethylsiloxane, polyimide, polyvinyl alcohol, polyethersulfone, and polyethylene terephthalate.

[0018] A further setting of the present invention is that in Step 7, the tearing angle for tearing the GaSb wafer and forming the GaSb thin film is 45° with respect to the end face of the GaSb wafer, and the surface layer of the GaSb wafer is torn by driving with the flexible substrate, and preferential fragmentation occurs at the surface position on the side of the GaSb wafer where Al ions and O ions are implanted.

[0019] In summary, the present invention has the following beneficial effects:

[0020] Al ions and O ions are implanted into both the end face position and one side wall position of the GaSb wafer. The Al ions react with GaSb to form an AlGaSb compound, and the wafer is heated in an annealing furnace to oxidize the AlGaSb compound with the O ions, thereby forming an oxidation brittle layer. This oxidation brittle layer is prone to fragmentation, and the GaSb wafer is separated through this oxidation brittle layer to form a GaSb thin film. The flexible substrate drives the tearing of the surface layer of the GaSb wafer, and fragmentation preferentially occurs at the surface position on the side of the GaSb wafer where Al ions and O ions are implanted. Additionally, Al ions and O ions are implanted at the side wall position of the GaSb wafer to form an oxidation brittle layer at the side wall position of the GaSb wafer, and this oxidation brittle layer serves as the starting point for tearing and cracking, thereby facilitating the tearing of the GaSb thin film from the GaSb wafer, and then the GaSb thin film is prepared. Description of the Drawings

[0021] Figure 1 It is a schematic diagram of the preparation method of the present invention. Detailed Embodiments

[0022] In order to make the technical means, creative features, achieved purposes, and effects of the present invention easy to understand, the present invention will be further described below in conjunction with the drawings and specific embodiments.

[0023] As Figure 1 shown, a method for preparing a flexible GaSb thin film proposed by the present invention includes the following steps: Step 1, implant Al ions into the GaSb wafer. The Al ions enter from the end face position of the GaSb wafer, and the GaSb wafer is a commercial (100) GaSb wafer. And in Step 1, the implantation energy of the Al ions is 50 - 200 keV, and the implantation dose is 1×10 16 -1×10 17 / cm 2 , so as to implant a layer of Al ions into the GaSb wafer. After the Al ions are implanted, they react with GaSb to form, that is, a layer of AlGaSb compound is formed in the GaSb wafer, and the AlGaSb compound has the characteristic of being easily oxidized.

[0024] Step 2, implant O ions into the GaSb wafer. The O ions enter from the end face position of the GaSb wafer, and the implanted O ions have the same depth as the Al ions. In Step 2, the implantation energy range of the O ions is 50 - 200 keV, and the O ions and the Al ions are located at the same depth position on the end face of the GaSb wafer, that is, an O ion layer remains at the position of the AlGaSb compound in the GaSb wafer.

[0025] Step 3: Inject Al ions at the sidewall position of the GaSb wafer. Al is located at one edge position of the GaSb wafer; that is, at a specific position on one sidewall of the GaSb wafer, inject Al ions, and the energy of the Al ion injection is 50 - 200 keV, and the injection dose is 1×10 16 -1×10 17 / cm 2 , so as to form a layer of AlGaSb compound on the sidewall at a specific position of the GaSb wafer.

[0026] Step 4: Inject O ions at the sidewall position of the GaSb wafer on the side where Al ions are injected. The position of the O ions is the same as that of the Al ions injected in Step 3, that is, the energy range of the O ion injection is 50 - 200 keV, so as to retain a certain amount of O ions among the AlGaSb compounds formed at the sidewall position of the GaSb wafer.

[0027] Step 5: Place the GaSb wafer after ion injection into an annealing furnace for high-temperature annealing. After completion, let it stand and cool down to room temperature. The annealing requirements are that the annealing temperature is 100 - 300 °C, the annealing time is 10 - 60 minutes, and the cooling method is natural cooling. After high-temperature annealing at the positions of the GaSb wafer where Al ions and O ions are injected, an oxidation brittle layer is formed by oxidation, that is, by promoting the reaction between the AlGaSb compound and O ions at high temperature, the AlGaSb compound is oxidized, and after oxidation of the AlGaSb compound, an oxidation brittle layer is formed, that is, this position is prone to fragmentation, and an oxidation brittle layer is also formed inside the wafer, and an oxidation brittle layer is formed at the sidewall position of one side of the GaSb wafer.

[0028] Step 6: Adhere the flexible substrate to the corresponding ion injection surface position of the GaSb wafer, that is, the flexible substrate is attached to the end face position of the GaSb wafer where Al ions and O ions are injected, and ensure firm adhesion. In this embodiment, the flexible substrate is one or a combination of more than one of dimethyl silicone, polyimide, polyvinyl alcohol, polysulfone, and polyethylene terephthalate. The flexible substrate ensures the fixation of the end face position of the GaSb wafer, and when tearing off the surface film of the GaSb wafer, it avoids the cracking and breaking of the GaSb film, and improves the efficiency of tearing the GaSb film.

[0029] Step 7: After the flexible substrate adheres firmly, tear off the surface layer of the GaSb wafer near the position attached to the flexible substrate. Start tearing from the position where Al ions and O ions are implanted on the sidewall of the GaSb wafer and form a GaSb thin film. When tearing, the tearing angle of the GaSb thin film is 45° with respect to the end face of the GaSb wafer, and the surface layer of the GaSb wafer is driven by the flexible substrate to tear, and the surface position on the side of the GaSb wafer implanted with Al ions and O ions fractures preferentially; in addition, Al ions and O ions are implanted at the sidewall position of the GaSb wafer to form an oxidation brittle layer at the sidewall position of the GaSb wafer, and this oxidation brittle layer is used as the starting point for tearing and cracking, so as to facilitate tearing the GaSb thin film from the GaSb wafer.

[0030] In this text, the orientation or positional relationship indicated by terms such as "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", "vertical", "horizontal", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the sake of clear expression of the technical solution and convenient description, and therefore cannot be construed as a limitation of the present invention.

[0031] In this text, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion. In addition to the listed elements, it may also include other elements not expressly listed.

[0032] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited by the above embodiments. What is described in the above embodiments and the specification only illustrates the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention will have various changes and improvements, and these changes and improvements fall within the scope of the present invention claimed. The scope of protection claimed by the present invention is defined by the appended claims and their equivalents.

Claims

1. A method for preparing a flexible GaSb thin film, characterized in that, it comprises the following steps: Step 1: Inject Al ions into the GaSb wafer, and the Al ions enter from the end face position of the GaSb wafer; Step 2: Inject O ions into the GaSb wafer, the O ions enter from the end face position of the GaSb wafer, and the injected O ions have the same depth as the Al ions; Step 3: Inject Al ions at the side wall position of the GaSb wafer, and Al is located at one edge position of the GaSb wafer; Step 4: Inject O ions at the side wall position of the GaSb wafer on the side where Al ions are injected, and the O ions are in the same position as the Al ions injected in Step 3; Step 5: Place the GaSb wafer in an annealing furnace for high-temperature annealing. After completion, let it stand and cool down to room temperature. After high-temperature annealing at the positions where Al ions and O ions are injected into the GaSb wafer, an oxidation brittle layer is formed by oxidation; Step 6: Adhere the flexible substrate to the corresponding ion implantation surface position of the GaSb wafer; Step 7: After the flexible substrate adheres firmly, tear off the surface layer of the GaSb wafer close to the position attached to the flexible substrate, start tearing from the position where Al ions and O ions are injected into the side wall of the GaSb wafer, and form a GaSb thin film.

2. A method for preparing a flexible GaSb thin film according to claim 1, characterized in that, In Step 1, the Al ion implantation energy is 50 - 200 keV, and the implantation dose is 1×10 16 -1×10 17 / cm 2 ; in Step 2, the implantation energy range of O ions is 50 - 200 keV, and the O ions and Al ions are located at the same depth position on the end face of the GaSb wafer.

3. A method for preparing a flexible GaSb thin film according to claim 1, characterized in that, In step 3, the Al ion implantation energy is 50 - 200 keV, and the implantation dose is 1×10 16 -1×10 17 / cm 2 , and in step 4, the O ion implantation energy range is 50 - 200 keV.

4. A method for preparing a flexible GaSb thin film according to claim 1, characterized in that, In Step 5, the annealing temperature of the annealing furnace is 100 - 300 °C, the annealing time is 10 - 60 minutes, and the cooling method is natural cooling.

5. A method for preparing a flexible GaSb thin film according to claim 1, characterized in that, In Step 6, the flexible substrate is one or a combination of more of dimethylsiloxane, polyimide, polyvinyl alcohol, polysulfone, and polyethylene terephthalate.

6. A method for preparing a flexible GaSb thin film according to claim 1, characterized in that, In Step 7, the tearing angle for tearing the GaSb wafer and forming the GaSb thin film is 45° with respect to the end face of the GaSb wafer, and the surface layer of the GaSb wafer is torn by driving with the flexible substrate, and it preferentially fractures at the surface position on the side of the GaSb wafer where Al ions and O ions are injected.

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