A module and a manufacturing method thereof

Abstract

The present invention provides a module and a manufacturing method thereof, including: a switching device layer, a circuit layer disposed on the switching device layer, and a plastic package; the switching device layer includes a substrate, a heat dissipation structure disposed on one side of the substrate, a power switching device chip disposed on the substrate, a fast recovery diode, a plurality of pins disposed on the substrate, and a first connector. The gate of the power switching device chip is electrically connected to the substrate cable layer through a wire, the source is soldered to the substrate circuit layer through solder paste, the drain is connected to the positive electrode of the fast recovery diode through a wire, and the negative electrode of the fast recovery diode is soldered to the source through solder paste; the circuit layer includes a double-sided circuit board, a communication circuit module disposed on the front surface of the double-sided circuit board, and a drive circuit module on the back surface. A plurality of connection holes are soldered to the drive circuit module through solder paste to achieve electrical connection; the plastic package is covered on the circuit layer and is hermetically disposed in cooperation with the substrate. The present invention can improve the heat dissipation effect and production efficiency.

Description

Technical Field

[0001] The present invention relates to the technical field of modular intelligent power systems, and particularly to a module and a manufacturing method thereof. Background Art

[0002] With the continuous progress of society, the demand for electrical equipment is also constantly developing. A power device, namely a modular intelligent power system MIPS (Module Intelligent Power System), is a power drive product that combines power electronics and integrated circuit technologies. MIPS not only integrates power switching devices and drive circuits, but also has built-in fault detection circuits such as overvoltage, overcurrent, and overheating, and can send detection signals to a CPU or DSP for interrupt processing. It consists of a high-speed, low-power consumption die, an optimized gate-level drive circuit, and a fast protection circuit. Even if a load accident or improper use occurs, MIPS itself will not be damaged. MIPS generally uses IGBT as a power switching element and has an integrated structure of a current sensor and a drive circuit. Traditional intelligent power modules generally use a high-voltage drive IC to drive IGBT, usually with a six-phase three-phase full-bridge drive, and have been widely used in industrial control, home appliances, and other fields.

[0003] The existing low-voltage control circuits such as the MIPS modular intelligent power system IC drive control circuit, the MIPS sampling and amplification circuit, and the PFC current protection circuit and the inverter circuit composed of high-voltage power devices are arranged on the same board to control the operation of a single DC motor. To meet the increasing market demand for energy-saving frequency conversion, more and more MIPS modules are applied to white goods, and some home appliances even use multiple MIPS modules. For example, the compressor, the outdoor unit cooling fan, and the indoor unit fan of an air conditioner each require 1 MIPS module. Therefore, there appears a module with multiple inverter units integrated inside. However, when multiple inverter units are all arranged on the same side of the aluminum metal plate, the volume of the module also increases accordingly. Facing the market competition of miniaturization and low cost, higher requirements are put forward for the MIPS modular intelligent power system. When the power device module works, a large amount of heat is generated and needs to be dissipated in time to prevent the module from being damaged due to excessive temperature. The above power device modules all rely on external radiators for auxiliary heat dissipation, and there is no power module product integrating the radiator function on the market.

[0004] However, the overall installation of the above power module is troublesome, the heat dissipation effect is poor, it occupies a large amount of installation space, the production efficiency is low, the effect of controlling the operation of the motor is poor, and the applicable range is small. Summary of the Invention

[0005] In view of the above deficiencies in the related technologies, the present invention provides a module and a manufacturing method thereof with low cost, good heat dissipation effect, convenient assembly, and facilitating the improvement of production efficiency.

[0006] To solve the above technical problems, in a first aspect, an embodiment of the present invention provides a module, including: a switching device layer, a circuit layer disposed on the switching device layer, and a plastic package hermetically disposed on the circuit layer;

[0007] The switching device layer includes a substrate, a heat dissipation structure disposed on one side of the substrate, a power switching device chip disposed on the substrate, a fast recovery diode, a plurality of pins disposed on the substrate, and a first connector. The upper surface of the substrate is a substrate circuit layer. The back surface of the power switching device chip is the source electrode, the front surface of the power switching device chip is the drain electrode, the gate electrode of the power switching device chip is electrically connected to the substrate cable layer through a wire, the source electrode is soldered to the substrate circuit layer through solder paste, the front surface of the fast recovery diode is the positive electrode, the back surface of the fast recovery diode is the negative electrode, the drain electrode is connected to the positive electrode of the fast recovery diode through a wire, and the negative electrode of the fast recovery diode is soldered to the source electrode through solder paste;

[0008] The circuit layer includes a double-sided circuit board, a communication circuit module disposed on the front surface of the double-sided circuit board, and a drive circuit module disposed on the back surface of the double-sided circuit board. The first connector is provided with a plurality of connection holes, and the plurality of connection holes are soldered to the drive circuit module through solder paste to achieve electrical connection;

[0009] The plastic package is covered on the circuit layer and is hermetically disposed in cooperation with the substrate.

[0010] Preferably, the drain electrode is connected to the positive electrode of the fast recovery diode through a first thick aluminum wire, and the gate electrode is connected to the substrate circuit layer through a second thick aluminum wire.

[0011] Preferably, the drive circuit module includes a drive IC chip disposed on the back surface of the double-sided circuit board, a third thick aluminum wire, a plurality of first resistor-capacitor devices, a second connector, and a plurality of first pins. The drive IC chip is electrically connected to the double-sided circuit board through the third thick aluminum wire, the plurality of first resistor-capacitor devices are soldered to the double-sided circuit board through solder paste, the plurality of first pins are disposed on the second connector, the first connector and the second connector are correspondingly disposed, and the plurality of first pins cooperate with the plurality of connection holes to achieve electrical connection.

[0012] Preferably, the plurality of connection holes are arranged side by side on the first connector, and the plurality of first pins are arranged side by side on the second connector.

[0013] Preferably, the communication circuit module includes a plurality of second resistor-capacitor devices disposed on the front surface of the double-sided circuit board, a third connector, and a plurality of second pins disposed on the third connector.

[0014] Preferably, the plurality of second pins are arranged side by side on the third connector.

[0015] Preferably, the switch device layer, the circuit layer, and the plastic package are integrally formed.

[0016] Preferably, there are a plurality of power switch device chips and a plurality of fast recovery diodes.

[0017] Preferably, the substrate is made of aluminum or copper material.

[0018] In a second aspect, an embodiment of the present invention further provides a manufacturing method of a module, and the manufacturing method includes the following steps:

[0019] S1. Fabricate a substrate with heat dissipation performance: Make an aluminum plate with a preset thickness into a structure with heat dissipation characteristics, cover an insulating layer on the surface of the aluminum plate and attach a layer of copper foil, and then etch the circuit on the surface of the copper foil after compaction;

[0020] S2. First solder paste printing: Brush solder paste with a melting point of 220°C at the mounting positions on the substrate;

[0021] S3. Chip installation: Mount the chips of the power switch device and the fast recovery diode that generate a large amount of heat during operation onto the substrate;

[0022] S4. Pin installation: Mount the pins onto the corresponding solder joints on the substrate;

[0023] S5. Connector installation: Install the first connector on the substrate and the second connector on the double-sided circuit board;

[0024] S6. First reflow soldering: Cure the first connector and the chips onto the substrate through a reflow oven with a peak temperature set to 230°C;

[0025] S7. Second solder paste printing: Print solder paste with a melting point of 280°C on one side of the double-sided circuit board;

[0026] S8. First SMT patching: Patch the components of the drive circuit layer, the first connector, the second connector, and the drive IC chip;

[0027] S9. Second reflow soldering: Pass the PCB board with components patched on one side through reflow soldering for curing, and the peak temperature of reflow soldering is 290°C;

[0028] S10, Third solder paste printing: Apply solder paste with a melting point of 220°C on the other side of the PCB board;

[0029] S11, Second SMT placement: Place the communication circuit layer and the connectors for external communication;

[0030] S12, Third reflow soldering: Cure the drive circuit layer and the communication circuit layer onto the PCB board. At this time, the peak temperature of the reflow soldering is 230°C;

[0031] S13, Coarse aluminum wire soldering: Solder an aluminum wire with a diameter of 20 mil between the drain solder joints of the power switch device chip, the positive solder joints of the rectifier diode chip, and the solder joints of the substrate with heat dissipation characteristics to achieve electrical connection between them;

[0032] S14, Fine aluminum wire soldering: Solder an aluminum wire with a diameter of 1.5 mil between the solder joints of the drive IC chip and the substrate on the PCB board, and between the gate solder joints of the power switch device chip and the substrate on the substrate with heat dissipation characteristics to achieve electrical connection between them;

[0033] S15, Snap-in electrical connection: Snap the second connector on the side of the substrate with the drive IC chip onto the first connector on the substrate to make the two parts form a whole;

[0034] S16, Injection molding fixation: Enclose the product inside the plastic package through injection molding;

[0035] S17, Laser marking: Mark product information on the outer shell of the plastic package of the product;

[0036] S18, Manufacturing and shaping: Punch and bend the pins into the required shapes.

[0037] Compared with the related technologies, in the present invention, a circuit layer is provided on the switching device layer to achieve driving and communication connections, and a plastic package provided on the circuit layer is used to seal the circuit layer and the switching device layer; the switching device layer includes a substrate, a heat dissipation structure provided on one side of the substrate, a power switching device chip provided on the substrate, a fast recovery diode, a plurality of pins provided on the substrate, and a first connector. The upper surface of the substrate is the substrate circuit layer. The back surface of the power switching device chip is the source electrode, the front surface of the power switching device chip is the drain electrode, the gate electrode of the power switching device chip is electrically connected to the substrate cable layer through a wire, the source electrode is soldered to the substrate circuit layer through solder paste, the front surface of the fast recovery diode is the positive electrode, the back surface of the fast recovery diode is the negative electrode, the drain electrode is connected to the positive electrode of the fast recovery diode through a wire, and the negative electrode of the fast recovery diode is soldered to the source electrode through solder paste; the circuit layer includes a double-sided circuit board, a communication circuit module provided on the front surface of the double-sided circuit board, and a driving circuit module provided on the back surface of the double-sided circuit board. The first connector is provided with a plurality of connection holes, and the plurality of connection holes are soldered to the driving circuit module through solder paste to achieve electrical connection; the plastic package is covered on the circuit layer and is hermetically arranged in cooperation with the substrate. By using a substrate with heat dissipation characteristics, there is no need to install an additional radiator after installing it on an external electronic control board, saving the installation and use costs; the volume of the power device circuit, the driving circuit, and the communication circuit stacked module is reduced, and the occupied position of the electronic control board is reduced, which is beneficial to the miniaturization of the product, thereby improving production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] The present invention will be described in detail below with reference to the drawings. Through the detailed description in combination with the following drawings, the above or other aspects of the present invention will become clearer and easier to understand. In the drawings:

[0039] Figure 1 is a three-dimensional structure schematic diagram of the module of the present invention;

[0040] Figure 2 is an internal structure schematic diagram of the module of the present invention;

[0041] Figure 3 is a structure schematic diagram of the switching device layer of the module of the present invention;

[0042] Figure 4 is a structure schematic diagram of the driving circuit module of the module of the present invention;

[0043] Figure 5 is a structure schematic diagram of the communication circuit module of the module of the present invention;

[0044] Figure 6 is a flowchart of the manufacturing method of the module of the present invention.

[0045] In the figure, 101 is the substrate, 102 is the heat dissipation structure, 103 is the power switch device chip, 104 is the fast recovery diode, 105 is the first thick aluminum wire, 106 is the second thick aluminum wire, 107 is the pin, 108 is the first connector, 109 is the connection hole, 1010 is the substrate circuit layer, 200 is the double-sided circuit board, 201 is the back of the double-sided circuit board, 202 is the driving IC chip, 203 is the third thick aluminum wire, 204 is the first resistor-capacitor device, 205 is the second connector, 206 is the first pin, 301 is the front of the double-sided circuit board, 302 is the second resistor-capacitor device, 303 is the third connector, 304 is the second pin, 401 is the switch device layer, 402 is the circuit layer, 501 is the plastic package, 502 is the communication circuit module, and 503 is the driving circuit module. Detailed Embodiment

[0046] The following will describe in detail the specific embodiments of the present invention with reference to the accompanying drawings.

[0047] The specific embodiments / embodiments described herein are specific embodiments of the present invention for illustrating the concept of the present invention, and are all explanatory and exemplary, and should not be construed as limiting the embodiments of the present invention and the scope of the present invention. Except for the embodiments described herein, those skilled in the art can also adopt other obvious technical solutions based on the content disclosed in the claims and the specification of this application. These technical solutions include technical solutions that make any obvious substitutions and modifications to the embodiments described herein, and are all within the protection scope of the present invention.

[0048] Embodiment 1

[0049] Please refer to Figures 1-5 as shown, where Figure 1 is a three-dimensional structure diagram of the module of the present invention; Figure 2 is an internal structure diagram of the module of the present invention; Figure 3 is a structure diagram of the switch device layer of the module of the present invention; Figure 4 is a structure diagram of the driving circuit module of the module of the present invention; Figure 5 is a structure diagram of the communication circuit module of the module of the present invention. The present invention provides a module, including: a switch device layer 401, a circuit layer 402 disposed on the switch device layer 401, and a plastic package 501 hermetically disposed on the circuit layer 402. The circuit layer 402 is sealed by the plastic package 501 and covered on the switch device layer 401 after sealing, so as to achieve the effect of overall sealing. Since the switch device layer 401 is disposed at the bottom, the circuit layer 402 is stacked on the switch device layer 401, and the plastic package 501 is stacked on the circuit layer 402, the plastic package 501 and the circuit layer 402 are assembled into a module, which is convenient to use.

[0050] Specifically, the switch device layer 401 includes a substrate 101, a heat dissipation structure 102 disposed on one side of the substrate 101, a power switch device chip 103 disposed on the substrate 101, a fast recovery diode 104, a plurality of pins 107 disposed on the substrate 101, and a first connector 108. The upper surface of the substrate 101 is a substrate circuit layer 1010. The back of the power switch device chip 103 is the source electrode, the front of the power switch device chip 103 is the drain electrode, the gate of the power switch device chip 103 is electrically connected to the substrate 101 cable layer through a wire, the source electrode is soldered to the substrate circuit layer 1010 through solder paste, the front of the fast recovery diode 104 is the positive electrode, the back of the fast recovery diode 104 is the negative electrode, the drain electrode is connected to the positive electrode of the fast recovery diode 104 through a wire, and the negative electrode of the fast recovery diode 104 is soldered to the source electrode through solder paste. The power switch device chip 103 is used to control the on-off effect of the circuit of the fast recovery diode 104.

[0051] The circuit layer 402 includes a double-sided circuit board 200, a communication circuit module 502 disposed on the front surface 301 of the double-sided circuit board 200, and a drive circuit module 503 disposed on the back surface 201 of the double-sided circuit board 200. The first connector 108 is provided with a plurality of connection holes 109, and the plurality of connection holes 109 are soldered to the drive circuit module 503 through solder paste to achieve electrical connection; the plastic package 501 is covered on the circuit layer and is hermetically arranged in cooperation with the substrate 101. By respectively installing a communication circuit module 502 on the double-sided circuit board 200 for communication connection with external devices, a drive circuit module 503 for connecting a motor to be driven through the pins 107, and a plurality of connection holes 109 provided on the first connector 108 for electrical connection by soldering to the drive circuit module 503. Using a substrate 101 with heat dissipation characteristics, no additional radiator needs to be installed after being installed on an external electronic control board, saving installation and usage costs; the power device circuit and the drive circuit and the communication circuit stacking module have a reduced volume, and the occupied position of the electronic control board is reduced, which is beneficial to the miniaturization of the product, thereby improving production efficiency.

[0052] In this embodiment, the drain electrode is connected to the positive electrode of the fast recovery diode 104 through a first thick aluminum wire 105, and the gate is connected to the substrate circuit layer 1010 through a second thick aluminum wire 106. It is convenient for the power switch device chip 103 to be electrically connected to the substrate circuit layer 1010 and the fast recovery diode 104 respectively.

[0053] In this embodiment, the driving circuit module 503 includes a driving IC chip 202 disposed on the back surface of the double-sided circuit board 200, a third thick aluminum wire 203, a plurality of first resistor-capacitor devices 204, a second connector 205, and a plurality of first pins 206. The driving IC chip 202 is electrically connected to the double-sided circuit board 200 through the third thick aluminum wire 203. The plurality of first resistor-capacitor devices 204 are soldered onto the double-sided circuit board 200 by solder paste. The plurality of first pins 206 are disposed on the second connector 205. The first connector 108 and the second connector 205 are correspondingly arranged. The plurality of first pins 206 are engaged with the plurality of connection holes 109 to achieve electrical connection. The driving IC chip 202 is used to control motor driving and is electrically connected to the double-sided circuit board 200 through the third thick aluminum wire 203, which facilitates the realization of the function of the driving IC chip 202. By soldering the plurality of first resistor-capacitor devices 204 onto the double-sided circuit board 200 by solder paste, it is used to protect the driving circuit module 503 and achieve a protective effect. The plurality of first pins 206 are disposed on the second connector 205. The first connector 108 and the second connector 205 are correspondingly arranged. The plurality of first pins 206 are engaged with the plurality of connection holes 109 to achieve electrical connection, which facilitates the assembly of the driving circuit module 503 and the substrate 101 to achieve an electrical connection effect and is convenient for installation.

[0054] In this embodiment, the plurality of connection holes 109 are arranged side by side on the first connector 108, and the plurality of first pins 206 are arranged side by side on the second connector 205. The plurality of first pins 206 are inserted into the plurality of connection holes 109 to achieve the mating electrical connection between the first connector 108 and the second connector 205. The overall assembly is convenient and has a wide application range.

[0055] In this embodiment, the communication circuit module 502 includes a plurality of second resistor-capacitor devices 302 disposed on the front surface 301 of the double-sided circuit board, a third connector 303, and a plurality of second pins 304 disposed on the third connector 303. The arrangement of the plurality of second pins 304 facilitates the connection of the third connector 303 to external devices.

[0056] In this embodiment, the plurality of second pins 304 are arranged side by side on the third connector 303.

[0057] In this embodiment, the switch device layer 401, the circuit layer, and the plastic package 501 are integrally formed. The integrally formed structure has high strength, and the overall occupied position on the electronic control board is reduced, which is beneficial to the miniaturization of the product.

[0058] In this embodiment, there are a plurality of power switch device chips 103 and a plurality of fast recovery diodes 104.

[0059] In this embodiment, the substrate 101 is made of aluminum or copper material. Aluminum or copper material has good electrical conductivity and is convenient to use.

[0060] In this embodiment, after the internal devices are encapsulated by the encapsulant 501, only the third connector 303, the first-layer pins 107, the first-layer substrate 101, and the heat dissipation structure 102 are exposed outside the encapsulant 501. The third connector 303 is used to connect to the networked MCU to update the algorithm in real time. The pins 107 are connected to the motor to be driven through the circuit on the external electronic control board. The heat dissipation structure 102 plays a role in dissipating heat from the module.

[0061] Embodiment Two

[0062] Such as Figures 1-6 , wherein, Figure 1 is a schematic diagram of the three-dimensional structure of the module of the present invention; Figure 2 is a schematic diagram of the internal structure of the module of the present invention; Figure 3 is a schematic diagram of the structure of the switching device layer of the module of the present invention; Figure 4 is a schematic diagram of the structure of the drive circuit module of the module of the present invention; Figure 5 is a schematic diagram of the structure of the communication circuit module of the module of the present invention; Figure 6 is a flowchart of the manufacturing method of the module of the present invention. The embodiment of the present invention also provides a manufacturing method of a module, and the manufacturing method includes the following steps:

[0063] S1. Fabricate a substrate with heat dissipation performance: Make an aluminum plate with a preset thickness into a structure with heat dissipation characteristics, cover an insulating layer on the surface of the aluminum plate and attach a layer of copper foil, and then etch the circuit on the surface of the copper foil after compaction.

[0064] Specifically, make an aluminum plate with a suitable thickness into a structure with heat dissipation characteristics, such as an air-cooled type; cover an insulating layer on the surface of the aluminum plate and attach a layer of copper foil, and then etch the circuit on the surface of the copper foil after compaction.

[0065] S2. First solder paste printing: Brush the solder paste with a melting point of 220 °C at the mounting positions on the substrate 101 with heat dissipation performance.

[0066] S3. Chip installation: Mount the chips of the power switch device and the fast recovery diode 104 that generate a large amount of heat during operation on the substrate 101.

[0067] S4. Pin installation: Mount the pins 107 on the corresponding solder joints of the substrate 101.

[0068] S5. Connector installation: Install the first connector 108 on the substrate 101, and install the second connector 205 on the double-sided circuit board 200.

[0069] Specifically, the female head of the first connector 108 is mounted on the substrate 101, and the substrate 101 and the first connector 108 form the first layer of the module, i.e., the switching device layer 401. The second connector 205 is mounted on the double-sided circuit board 200, and the second connector 205 and the double-sided circuit board 200 form the back side of the second layer of the module. The second connector 205 is mounted on the substrate 101 with heat dissipation characteristics corresponding to the first connector 108.

[0070] S6. First reflow soldering: The product passes through a reflow oven with a peak temperature set at 230°C to cure the first connector 108 and the chip onto the substrate 101.

[0071] Specifically, the product cures the above-mentioned devices onto the aluminum substrate 101 through a reflow oven with a peak temperature set at 230°C.

[0072] S7. Second solder paste printing: Solder paste with a melting point of 280°C is printed on one side of the double-sided circuit board 200.

[0073] Among them, the double-sided circuit board 200 is a double-sided PCB board.

[0074] S8. First SMT placement: Place the components of the drive circuit layer, the first connector 108, the second connector 205, and the drive IC chip 202.

[0075] Specifically, place the components of the drive circuit module on the second layer, the male heads of the connectors on the first and second layers, and the drive IC chip 202. Among them, the first layer is the drive circuit layer, and the second layer is the communication circuit layer.

[0076] S9. Second reflow soldering: Pass the PCB board with components placed on one side through reflow soldering for curing, and the peak temperature of the reflow soldering is 290°C.

[0077] S10. Third solder paste printing: Brush solder paste with a melting point of 220°C on the other side of the PCB board.

[0078] S11. Second SMT placement: Place the components of the communication circuit layer and the connectors for external communication.

[0079] S12. Third reflow soldering: Cure the drive circuit layer and the communication circuit layer onto the PCB board. At this time, the peak temperature of the reflow soldering is 230°C.

[0080] S13. Coarse aluminum wire soldering: Solder an aluminum wire with a diameter of 20 mil between the drain solder joints of the power switch device chip 103, the positive solder joints of the rectifier diode chip, and the solder joints of the substrate 101 with heat dissipation characteristics to achieve electrical connection between them.

[0081] S14. Fine aluminum wire welding: Weld aluminum wires with a diameter of 1.5 mil between the solder joints of the driving IC chip 202 and the substrate 101 on the PCB board, and between the gate solder joints of the power switch device chip 103 and the substrate 101 on the substrate 101 with heat dissipation characteristics to achieve electrical connection between them.

[0082] S15. Snap connection: Snap the second connector 205 on the side of the substrate 101 with the driving IC chip 202 onto the first connector 108 on the substrate 101 to make the two parts form an integral whole.

[0083] S16. Injection molding and fixing: Enclose the product inside the plastic package 501 through injection molding.

[0084] S17. Laser marking: Mark product information on the outer shell of the product plastic package 501.

[0085] S18. Manufacturing and shaping: Punch and bend the pins 107 into the required shapes.

[0086] Specifically, an aluminum plate with a moderate thickness is made into a structure with heat dissipation characteristics, such as an air-cooled type; an insulating layer is covered on the surface of the aluminum plate and a layer of copper foil is attached, and after being compacted, a circuit is etched on the surface of the copper foil. Solder paste with a melting point of 220 °C is brushed at the mounting positions on the substrate 101 with heat dissipation characteristics; chips that generate a large amount of heat during the operation of the power switch device and the fast recovery diode 104 are mounted on the substrate 101 with heat dissipation characteristics; the pins 107 are mounted on the corresponding solder joints of the substrate 101 with heat dissipation characteristics; the female connector for connecting the first and second layers is mounted on the substrate 101 with heat dissipation characteristics; the above devices are cured on the aluminum substrate 101 through a reflow oven with a peak temperature set at 230 °C; solder paste with a melting point of 280 °C is printed on one side of the double-sided PCB; the second-layer components, the male connectors for the first and second layers, and the drive IC chip 202 are mounted; the PCB board with the devices mounted on one side is cured through reflow soldering, and at this time the peak temperature of the reflow soldering is 290 °C; solder paste with a melting point of 220 °C is brushed on the other side of the PCB board; the third-layer components and the connectors for external communication are mounted; the third-layer components are cured on the PCB board, and at this time the peak temperature of the reflow soldering is 230 °C; aluminum wires with a diameter of 20 mil are welded between the drain solder joints of the power device chip, the positive solder joints of the rectifier diode chip, and the solder joints of the substrate 101 with heat dissipation characteristics to achieve electrical connection between them; aluminum wires with a diameter of 1.5 mil are welded between the solder joints of the drive IC chip 202 on the PCB and the solder joints of the aluminum substrate 101, and between the gate solder joints of the power device and the solder joints of the substrate 101 on the substrate 101 with heat dissipation characteristics to achieve electrical connection between them; the connector on the side of the PCB substrate 101 with the drive IC is buckled with the connector on the substrate 101 with heat dissipation characteristics to form an integral whole of the two parts; the above product is encapsulated; product information is marked on the outer shell of the product encapsulation material; the pins 107 are blanked and bent into the required shapes. By using the substrate 101 with heat dissipation characteristics, no additional radiator needs to be installed after it is installed on the external electric control board, saving the installation and use costs; the stacking of the power device circuit, the drive circuit, and the communication circuit module reduces the volume, and the occupied position on the electric control board is reduced, which is beneficial to the miniaturization of the product, thereby improving the production efficiency.

Claims

1. A module, characterized in that, Comprising: A switching device layer, a circuit layer disposed on the switching device layer, and a plastic package hermetically disposed on the circuit layer; The switching device layer includes a substrate, a heat dissipation structure disposed on one side of the substrate, a power switching device chip disposed on the substrate, a fast recovery diode, a plurality of pins disposed on the substrate, and a first connector. The upper surface of the substrate is a substrate circuit layer. The back surface of the power switching device chip is the source electrode, the front surface of the power switching device chip is the drain electrode, the gate of the power switching device chip is electrically connected to the substrate circuit layer through a wire, the source electrode is soldered to the substrate circuit layer with solder paste, the front surface of the fast recovery diode is the positive electrode, the back surface of the fast recovery diode is the negative electrode, the drain electrode is connected to the positive electrode of the fast recovery diode through a wire, and the negative electrode of the fast recovery diode is soldered to the source electrode with solder paste; The circuit layer includes a double-sided circuit board, a communication circuit module disposed on the front surface of the double-sided circuit board, and a drive circuit module disposed on the back surface of the double-sided circuit board. The first connector is provided with a plurality of connection holes, and the plurality of connection holes are soldered to the drive circuit module with solder paste to achieve electrical connection; The plastic package covers the circuit layer and is hermetically disposed in cooperation with the substrate; The drain electrode is connected to the positive electrode of the fast recovery diode through a first thick aluminum wire, and the gate is connected to the substrate circuit layer through a second thick aluminum wire; The drive circuit module includes a drive IC chip disposed on the back surface of the double-sided circuit board, a third thick aluminum wire, a plurality of first resistor-capacitor devices, a second connector, and a plurality of first pins. The drive IC chip is electrically connected to the double-sided circuit board through the third thick aluminum wire, the plurality of first resistor-capacitor devices are soldered to the double-sided circuit board with solder paste, the plurality of first pins are disposed on the second connector, the first connector and the second connector are correspondingly disposed, and the plurality of first pins cooperate with the plurality of connection holes to achieve electrical connection.

2. The module according to claim 1, characterized in that, The plurality of connection holes are arranged side by side on the first connector, and the plurality of first pins are arranged side by side on the second connector.

3. The module according to claim 1, wherein The communication circuit module includes a plurality of second resistor-capacitor devices disposed on the front surface of the double-sided circuit board, a third connector, and a plurality of second pins disposed on the third connector.

4. The module according to claim 3, wherein The plurality of second pins are arranged side by side on the third connector.

5. The module according to claim 1, characterized in that, The switching device layer, the circuit layer, and the plastic package are integrally formed.

6. The module according to claim 1, wherein There are a plurality of the power switching device chips and a plurality of the fast recovery diodes.

7. The module according to claim 1, wherein The substrate is made of aluminum or copper material.

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