Microstructure and performance analysis method, device and electronic equipment of NiV alloy target

Abstract

This invention discloses a method, apparatus, and electronic device for microstructure and performance analysis of NiV alloy targets, comprising: determining the grain size in the NiV alloy target based on a high-resolution electron microscope; dividing the NiV alloy target into coarse-grained and fine-grained regions based on the grain size; determining the form window for X-ray fluorescence spectroscopy analysis of each crystal region based on the grain size; applying X-ray fluorescence to each crystal region based on the form window to obtain fluorescence analysis values; comparing the fluorescence analysis values ​​with standard fluorescence values ​​to obtain X-ray fluorescence spectra; determining the vanadium content and sputtering rate of the NiV alloy target in each crystal region based on the X-ray fluorescence spectra; determining the texture of the target in each crystal region based on the sputtering rate of the NiV alloy target in each crystal region and the directional pole figure outside the etching groove of the target; and performing comparative analysis on the target in each crystal region based on the texture of the target in each crystal region to obtain the microstructure and performance analysis results for the target in each crystal region.

Description

Technical Field

[0001] The present invention relates to the technical field of NiV alloy analysis, and in particular to a method, a device and an electronic device for analyzing the microstructure and performance of a NiV alloy target. Background Art

[0002] Nickel-vanadium (NiV) alloy films have good electrical and magnetic properties, and due to their special crystal structure, they are widely used in magnetic recording materials, giant magnetoresistance, micromagnetic devices and anti-corrosion coatings. Nickel-vanadium alloy target is a new type of semiconductor-related material, which has the advantages of high flatness and high purity of nickel sputtering target and the high-temperature superconductivity of vanadium sputtering target. Therefore, it is widely used in electronics and semiconductors, solar thin-film batteries, flat panel displays, architectural glass and other technical fields. The use of nickel-vanadium alloy targets can generate adhesion layers and barrier layers in one sputtering. At the same time, after adding a certain amount of vanadium to nickel, the nickel-vanadium alloy becomes non-magnetic, which is conducive to magnetron sputtering coating.

[0003] The quality of the nickel-vanadium alloy target is crucial to the performance of the sputtered film. The higher the purity of the nickel-vanadium alloy target, the more uniform the composition, the more uniform the grain size, and the more uniform the structure. Therefore, it is necessary to analyze the microstructure and performance of the prepared NiV alloy target to determine whether the quality of the nickel-vanadium alloy target meets the requirements. Summary of the invention

[0004] In view of how to determine the quality of nickel-vanadium alloy target materials in the prior art, the present invention provides a method, device and electronic equipment for analyzing the microstructure and performance of NiV alloy target materials.

[0005] To achieve the above objectives, the present invention is implemented through the following technical solutions:

[0006] In a first aspect of an embodiment of the present invention, a method for analyzing the microstructure and performance of a NiV alloy target is provided, the method comprising:

[0007] Obtaining a NiV alloy target to be analyzed, and determining the size of grains in the NiV alloy target to be analyzed based on a high-resolution electrical microscope, and dividing the NiV alloy target to be analyzed into crystal regions according to the size of the grains in the NiV alloy target to be analyzed, wherein the crystal regions include coarse grain regions and fine grain regions;

[0008] According to the grain size of each crystal region, determine the form window of the X-ray fluorescence spectrum analysis scanning the crystal region, based on the form window, apply X-ray fluorescence to each crystal region to obtain a fluorescence analysis value, and compare the fluorescence analysis value with a standard fluorescence value to obtain a X-ray fluorescence spectrum, and determine the vanadium content in each crystal region of the NiV alloy target to be analyzed according to the X-ray fluorescence spectrum;

[0009] Determining the sputtering rate of the NiV alloy target in each crystal region according to the vanadium content in each crystal region;

[0010] Determining the texture of the coarse-grained target material in the coarse-grained region and the texture of the fine-grained target material in the fine-grained region according to the sputtering rate of the NiV alloy target material in each of the crystal regions and the directional pole figure outside the target etching groove;

[0011] According to the texture of the coarse crystal target in the coarse crystal zone and the texture of the fine crystal target in the fine crystal zone, a comparative analysis is performed on the coarse crystal target in the coarse crystal zone and the fine crystal target in the fine crystal zone to obtain microstructure and performance analysis results for the targets in each crystal zone.

[0012] In one of the embodiments, the step of determining the size of the grains in the NiV alloy target to be analyzed based on a high-resolution electrical microscope comprises:

[0013] Determining the tunneling voltage between a probe of a high-resolution electrical microscope and the NiV alloy target to be analyzed;

[0014] Applying a bias voltage having the same magnitude as the tunnel voltage to a probe of the high-resolution electrical microscope, acquiring a tunnel current corresponding to the application of the bias voltage, and determining change information of the tunnel current according to the tunnel current;

[0015] Determining the concavo-convex morphology of the NiV alloy target to be analyzed according to the change information of the tunnel current and the functional relationship between the distance between the probe of the high-resolution electrical microscope and the NiV alloy target to be analyzed;

[0016] According to the concavo-convex morphology, the size of the grains in the NiV alloy target to be analyzed is determined.

[0017] In one of the embodiments, the step of dividing the NiV alloy target to be analyzed into crystal regions according to the size of the grains in the NiV alloy target to be analyzed comprises:

[0018] Calculating the average value and variance of the size of the grains in the NiV alloy target material to be analyzed;

[0019] Based on Gauss's theorem, according to the average value and variance of the size of the grains and the size of the grains, the characteristic vector value of each grain is calculated to obtain the characteristic vector distribution of the NiV alloy target to be analyzed;

[0020] Based on a convolution kernel of a preset size, performing convolution calculation on the characteristic vector distribution of the NiV alloy target material to be analyzed to obtain a convolution characteristic vector;

[0021] The NiV alloy target material to be analyzed is divided into crystal regions according to the convolution feature vector.

[0022] In one embodiment, the step of determining the sputtering rate of the NiV alloy target in each crystal region according to the vanadium content in each crystal region comprises:

[0023] Determining the preferred orientation of each crystal region according to the direction of change of the vanadium content in each crystal region, and determining the percentage of the preferred orientation of each crystal region by comparing the diffraction peak intensity of the randomly preferred oriented nickel;

[0024] Obtaining characteristic curves of nickel and vanadium elements corresponding to the percentage of the preferred orientation of each crystal region from the characteristic preferred orientation percentage library;

[0025] Input a preset objective function according to the percentage of the preferred orientation of each crystal region, the preferred orientation, and the characteristic curves of the nickel element and the vanadium element corresponding to each crystal region, obtain the proportional coefficient of the element corresponding to the characteristic curve when the objective function is minimum, and determine the placement position of the three-axis coordinate measuring machine according to the proportional coefficient;

[0026] The coarse-grained area and the fine-grained area are subjected to etching profile analysis based on a three-axis coordinate measuring instrument. The sputtering rate of the NiV alloy target in the coarse-grained area is determined according to the etching depth of the coarse-grained area, and the sputtering rate of the NiV alloy target in the fine-grained area is determined according to the etching depth of the fine-grained area.

[0027] In one of the embodiments, the step of comparatively analyzing the coarse crystal target in the coarse crystal region and the fine crystal target in the fine crystal region according to the texture of the coarse crystal target in the coarse crystal region and the texture of the fine crystal target in the fine crystal region to obtain microstructure and performance analysis results for the targets in each crystal region includes:

[0028] According to the texture of the coarse crystal target material in the coarse crystal region and the texture of the fine crystal target material in the fine crystal region, randomly taking a coarse crystal target material from the coarse crystal region and randomly taking a fine crystal target material from the fine crystal region, and performing recrystallization annealing heat treatment on the coarse crystal target material and the fine crystal target material to obtain an annealed coarse crystal target material and an annealed fine crystal target material;

[0029] Comparing the coarse grain target material in the coarse grain target material in the annealed coarse grain target material to obtain the coarse grain size change information for the annealed coarse grain target material in the coarse grain target material, and comparing the fine grain target material in the fine grain target material in the annealed coarse grain target material to obtain the fine grain size change information for the annealed fine grain target material in the fine grain target material;

[0030] According to the coarse grain size change information and the fine grain size change information, the microstructure and performance analysis results of the target material in each crystal region are determined.

[0031] In a second aspect of an embodiment of the present invention, a device for analyzing the microstructure and performance of a NiV alloy target is provided, the device comprising:

[0032] An acquisition module is configured to acquire a NiV alloy target to be analyzed, and determine the size of grains in the NiV alloy target to be analyzed based on a high-resolution electrical microscope, and divide the NiV alloy target to be analyzed into crystal regions according to the size of the grains in the NiV alloy target to be analyzed, wherein the crystal regions include coarse grain regions and fine grain regions;

[0033] A first determination module is configured to determine a form window for scanning the crystal region by X-ray fluorescence spectrum analysis according to the grain size of each crystal region, apply X-ray fluorescence to each crystal region based on the form window to obtain a fluorescence analysis value, and compare the fluorescence analysis value with a standard fluorescence value to obtain a X-ray fluorescence spectrum, and determine the vanadium content in each crystal region in the NiV alloy target to be analyzed according to the X-ray fluorescence spectrum;

[0034] A second determination module is configured to determine the sputtering rate of the NiV alloy target in each crystal region according to the vanadium content in each crystal region;

[0035] A third determination module is configured to determine the texture of the coarse grain target material in the coarse grain region and the texture of the fine grain target material in the fine grain region according to the sputtering rate of the NiV alloy target material in each of the crystal regions and the directional pole figure outside the target etching groove;

[0036] The fourth determination module is configured to perform comparative analysis on the coarse grain target material in the coarse grain zone and the fine grain target material in the fine grain zone according to the texture of the coarse grain target material in the coarse grain zone and the texture of the fine grain target material in the fine grain zone, so as to obtain microstructure and performance analysis results for the coarse grain target material.

[0037] In one embodiment, the acquisition module is configured to:

[0038] Determining the tunneling voltage between a probe of a high-resolution electrical microscope and the NiV alloy target to be analyzed;

[0039] Applying a bias voltage having the same magnitude as the tunnel voltage to a probe of the high-resolution electrical microscope, acquiring a tunnel current corresponding to the application of the bias voltage, and determining change information of the tunnel current according to the tunnel current;

[0040] Determining the concavo-convex morphology of the NiV alloy target to be analyzed according to the change information of the tunnel current and the functional relationship between the distance between the probe of the high-resolution electrical microscope and the NiV alloy target to be analyzed;

[0041] According to the concavo-convex morphology, the size of the grains in the NiV alloy target to be analyzed is determined.

[0042] In one embodiment, the acquisition module is configured to:

[0043] Calculating the average value and variance of the size of the grains in the NiV alloy target material to be analyzed;

[0044] Based on Gauss's theorem, according to the average value and variance of the size of the grains and the size of the grains, the characteristic vector value of each grain is calculated to obtain the characteristic vector distribution of the NiV alloy target to be analyzed;

[0045] Based on a convolution kernel of a preset size, performing convolution calculation on the characteristic vector distribution of the NiV alloy target material to be analyzed to obtain a convolution characteristic vector;

[0046] The NiV alloy target material to be analyzed is divided into crystal regions according to the convolution feature vector.

[0047] In one of the embodiments, the second determining module is configured to:

[0048] Determining the preferred orientation of each crystal region according to the direction of change of the vanadium content in each crystal region, and determining the percentage of the preferred orientation of each crystal region by comparing the diffraction peak intensity of the randomly preferred oriented nickel;

[0049] Obtaining characteristic curves of nickel and vanadium elements corresponding to the percentage of the preferred orientation of each crystal region from the characteristic preferred orientation percentage library;

[0050] Input a preset objective function according to the percentage of the preferred orientation of each crystal region, the preferred orientation, and the characteristic curves of the nickel element and the vanadium element corresponding to each crystal region, obtain the proportional coefficient of the element corresponding to the characteristic curve when the objective function is minimum, and determine the placement position of the three-axis coordinate measuring machine according to the proportional coefficient;

[0051] The coarse-grained area and the fine-grained area are subjected to etching profile analysis based on a three-axis coordinate measuring instrument. The sputtering rate of the NiV alloy target in the coarse-grained area is determined according to the etching depth of the coarse-grained area, and the sputtering rate of the NiV alloy target in the fine-grained area is determined according to the etching depth of the fine-grained area.

[0052] In one of the embodiments, the fourth determining module is configured to:

[0053] According to the texture of the coarse crystal target material in the coarse crystal region and the texture of the fine crystal target material in the fine crystal region, randomly taking a coarse crystal target material from the coarse crystal region and randomly taking a fine crystal target material from the fine crystal region, and performing recrystallization annealing heat treatment on the coarse crystal target material and the fine crystal target material to obtain an annealed coarse crystal target material and an annealed fine crystal target material;

[0054] Comparing the coarse grain target material in the coarse grain target material in the annealed coarse grain target material to obtain the coarse grain size change information for the annealed coarse grain target material in the coarse grain target material, and comparing the fine grain target material in the fine grain target material in the annealed coarse grain target material to obtain the fine grain size change information for the annealed fine grain target material in the fine grain target material;

[0055] According to the coarse grain size change information and the fine grain size change information, the microstructure and performance analysis results of the target material in each crystal region are determined.

[0056] According to a third aspect of an embodiment of the present invention, there is provided an electronic device, including:

[0057] a memory having a computer program stored thereon;

[0058] A processor is used to execute the computer program in the memory to implement the steps of the microstructure and performance analysis method of the NiV alloy target material in any one of the first aspects.

[0059] Beneficial Effects

[0060] The present invention provides a method, device and electronic device for analyzing the microstructure and performance of NiV alloy targets. Compared with the prior art, the present invention has the following beneficial effects:

[0061] The NiV alloy target to be analyzed is obtained, and the size of the grains in the NiV alloy target to be analyzed is determined based on a high-resolution electrical microscope. According to the size of the grains in the NiV alloy target to be analyzed, the NiV alloy target to be analyzed is divided into crystal regions, wherein the crystal regions include coarse crystal regions and fine crystal regions; according to the grain size of each crystal region, a form window for scanning the crystal region by X-ray fluorescence spectrum analysis is determined, based on the form window, X-ray fluorescence is applied to each crystal region to obtain a fluorescence analysis value, and the fluorescence analysis value is compared with a standard fluorescence value to obtain a X-ray fluorescence spectrum, and according to the X-ray fluorescence spectrum , determine the vanadium content in each crystal region of the NiV alloy target to be analyzed; determine the sputtering rate of the NiV alloy target in each crystal region according to the vanadium content in each crystal region; determine the texture of the coarse crystal region target in the coarse crystal region and the texture of the fine crystal region target in the fine crystal region according to the sputtering rate of the NiV alloy target in each crystal region and the directional pole figure outside the target etching groove; according to the texture of the coarse crystal region target in the coarse crystal region and the texture of the fine crystal region target in the fine crystal region, compare and analyze the coarse crystal region target in the coarse crystal region and the fine crystal region target in the fine crystal region to obtain the microstructure and performance analysis results for the target in each crystal region. The microstructure and performance analysis of the prepared NiV alloy target can be accurately performed, thereby accurately determining the quality of the nickel-vanadium alloy target. BRIEF DESCRIPTION OF THE DRAWINGS

[0062] Figure 1 The present invention provides a flow chart of a method for analyzing the microstructure and performance of a NiV alloy target.

[0063] Figure 2 The block diagram is a microstructure and performance analysis device of a NiV alloy target provided according to the present invention. DETAILED DESCRIPTION

[0064] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0065] See also Figure 1 The present invention provides a technical solution: a method for analyzing the microstructure and performance of a NiV alloy target, the method comprising the following steps.

[0066] In step S11, a NiV alloy target to be analyzed is obtained, and based on a high-resolution electrical microscope, the size of the grains in the NiV alloy target to be analyzed is determined, and according to the size of the grains in the NiV alloy target to be analyzed, the NiV alloy target to be analyzed is divided into crystal regions, wherein the crystal regions include coarse crystal regions and fine crystal regions;

[0067] In step S12, according to the grain size of each crystal region, a form window for scanning the crystal region by X-ray fluorescence spectrum analysis is determined, based on the form window, X-ray fluorescence is applied to each crystal region to obtain a fluorescence analysis value, and the fluorescence analysis value is compared with a standard fluorescence value to obtain a X-ray fluorescence spectrum, and the vanadium content in each crystal region of the NiV alloy target to be analyzed is determined according to the X-ray fluorescence spectrum;

[0068] In step S13, the sputtering rate of the NiV alloy target in each crystal region is determined according to the vanadium content in each crystal region;

[0069] In step S14, the texture of the coarse-grained target material in the coarse-grained region and the texture of the fine-grained target material in the fine-grained region are determined according to the sputtering rate of the NiV alloy target material in each of the crystal regions and the directional pole figure outside the target etching groove;

[0070] In step S15, based on the texture of the coarse crystal target in the coarse crystal zone and the texture of the fine crystal target in the fine crystal zone, a comparative analysis is performed on the coarse crystal target in the coarse crystal zone and the fine crystal target in the fine crystal zone to obtain microstructure and performance analysis results for the targets in each crystal zone.

[0071] The above technical solution obtains the NiV alloy target to be analyzed, and determines the size of the grains in the NiV alloy target to be analyzed based on a high-resolution electrical microscope, and divides the NiV alloy target to be analyzed into crystal regions according to the size of the grains in the NiV alloy target to be analyzed, wherein the crystal regions include coarse crystal regions and fine crystal regions; according to the grain size of each crystal region, a form window for scanning the crystal region by X-ray fluorescence spectroscopy is determined, and based on the form window, X-ray fluorescence is applied to each crystal region to obtain a fluorescence analysis value, and the fluorescence analysis value is compared with a standard fluorescence value to obtain a X-ray fluorescence spectrum, and according to the X-ray fluorescence The vanadium content in each crystal region of the NiV alloy target to be analyzed is determined by optical spectrum; the sputtering rate of the NiV alloy target in each crystal region is determined according to the vanadium content in each crystal region; the texture of the coarse crystal region target in the coarse crystal region and the texture of the fine crystal region target in the fine crystal region are determined according to the sputtering rate of the NiV alloy target in each crystal region and the directional pole figure outside the target etching groove; the coarse crystal region target in the coarse crystal region and the fine crystal region target in the fine crystal region are compared and analyzed according to the texture of the coarse crystal region target in the coarse crystal region and the texture of the fine crystal region target in the fine crystal region, and the microstructure and performance analysis results for the target in each crystal region are obtained. The microstructure and performance analysis of the prepared NiV alloy target can be accurately performed, thereby accurately determining the quality of the nickel-vanadium alloy target.

[0072] In one of the embodiments, in step S11, the step of determining the size of the grains in the NiV alloy target to be analyzed based on a high-resolution electrical microscope includes:

[0073] Determining the tunneling voltage between a probe of a high-resolution electrical microscope and the NiV alloy target to be analyzed;

[0074] Applying a bias voltage having the same magnitude as the tunnel voltage to a probe of the high-resolution electrical microscope, acquiring a tunnel current corresponding to the application of the bias voltage, and determining change information of the tunnel current according to the tunnel current;

[0075] Determining the concavo-convex morphology of the NiV alloy target to be analyzed according to the change information of the tunnel current and the functional relationship between the distance between the probe of the high-resolution electrical microscope and the NiV alloy target to be analyzed;

[0076] According to the concavo-convex morphology, the size of the grains in the NiV alloy target to be analyzed is determined.

[0077] In one of the embodiments, in step S11, the step of dividing the NiV alloy target to be analyzed into crystal regions according to the size of the grains in the NiV alloy target to be analyzed comprises:

[0078] Calculating the average value and variance of the size of the grains in the NiV alloy target material to be analyzed;

[0079] Based on Gauss's theorem, according to the average value and variance of the size of the grains and the size of the grains, the characteristic vector value of each grain is calculated to obtain the characteristic vector distribution of the NiV alloy target to be analyzed;

[0080] Based on a convolution kernel of a preset size, performing convolution calculation on the characteristic vector distribution of the NiV alloy target material to be analyzed to obtain a convolution characteristic vector;

[0081] The NiV alloy target material to be analyzed is divided into crystal regions according to the convolution feature vector.

[0082] In one embodiment, in step S13, the step of determining the sputtering rate of the NiV alloy target in each crystal region according to the vanadium content in each crystal region comprises:

[0083] Determining the preferred orientation of each crystal region according to the direction of change of the vanadium content in each crystal region, and determining the percentage of the preferred orientation of each crystal region by comparing the diffraction peak intensity of the randomly preferred oriented nickel;

[0084] Obtaining characteristic curves of nickel and vanadium elements corresponding to the percentage of the preferred orientation of each crystal region from the characteristic preferred orientation percentage library;

[0085] Input a preset objective function according to the percentage of the preferred orientation of each crystal region, the preferred orientation, and the characteristic curves of the nickel element and the vanadium element corresponding to each crystal region, obtain the proportional coefficient of the element corresponding to the characteristic curve when the objective function is minimum, and determine the placement position of the three-axis coordinate measuring machine according to the proportional coefficient;

[0086] The coarse-grained area and the fine-grained area are subjected to etching profile analysis based on a three-axis coordinate measuring instrument. The sputtering rate of the NiV alloy target in the coarse-grained area is determined according to the etching depth of the coarse-grained area, and the sputtering rate of the NiV alloy target in the fine-grained area is determined according to the etching depth of the fine-grained area.

[0087] In one of the embodiments, in step S15, the step of performing comparative analysis on the coarse crystal target in the coarse crystal region and the fine crystal target in the fine crystal region according to the texture of the coarse crystal target in the coarse crystal region and the texture of the fine crystal target in the fine crystal region to obtain microstructure and performance analysis results for the targets in each crystal region includes:

[0088] According to the texture of the coarse crystal target material in the coarse crystal region and the texture of the fine crystal target material in the fine crystal region, randomly taking a coarse crystal target material from the coarse crystal region and randomly taking a fine crystal target material from the fine crystal region, and performing recrystallization annealing heat treatment on the coarse crystal target material and the fine crystal target material to obtain an annealed coarse crystal target material and an annealed fine crystal target material;

[0089] Comparing the coarse grain target material in the coarse grain target material in the annealed coarse grain target material to obtain the coarse grain size change information for the annealed coarse grain target material in the coarse grain target material, and comparing the fine grain target material in the fine grain target material in the annealed coarse grain target material to obtain the fine grain size change information for the annealed fine grain target material in the fine grain target material;

[0090] According to the coarse grain size change information and the fine grain size change information, the microstructure and performance analysis results of the target material in each crystal region are determined.

[0091] Based on the same inventive concept, an embodiment of the present invention further provides a microstructure and performance analysis device for a NiV alloy target. Figure 2 This is a block diagram of a microstructure and performance analysis device for a NiV alloy target provided by the present invention, wherein the device 200 comprises:

[0092] The acquisition module 210 is configured to acquire a NiV alloy target to be analyzed, and determine the size of the grains in the NiV alloy target to be analyzed based on a high-resolution electrical microscope, and divide the NiV alloy target to be analyzed into crystal regions according to the size of the grains in the NiV alloy target to be analyzed, wherein the crystal regions include coarse grain regions and fine grain regions;

[0093] The first determination module 220 is configured to determine a form window for scanning the crystal region by X-ray fluorescence spectrum analysis according to the grain size of each crystal region, apply X-ray fluorescence to each crystal region based on the form window to obtain a fluorescence analysis value, and compare the fluorescence analysis value with a standard fluorescence value to obtain a X-ray fluorescence spectrum, and determine the vanadium content in each crystal region in the NiV alloy target to be analyzed according to the X-ray fluorescence spectrum;

[0094] The second determination module 230 is configured to determine the sputtering rate of the NiV alloy target in each crystal region according to the vanadium content in each crystal region;

[0095] The third determination module 240 is configured to determine the texture of the coarse grain target material in the coarse grain region and the texture of the fine grain target material in the fine grain region according to the sputtering rate of the NiV alloy target material in each of the crystal regions and the directional pole figure outside the target etching groove;

[0096] The fourth determination module 250 is configured to perform comparative analysis on the coarse grain target in the coarse grain zone and the fine grain target in the fine grain zone according to the texture of the coarse grain target in the coarse grain zone and the texture of the fine grain target in the fine grain zone, so as to obtain microstructure and performance analysis results for the coarse grain target.

[0097] In one embodiment, the acquisition module 210 is configured to:

[0098] Determining the tunneling voltage between a probe of a high-resolution electrical microscope and the NiV alloy target to be analyzed;

[0099] Applying a bias voltage having the same magnitude as the tunnel voltage to a probe of the high-resolution electrical microscope, acquiring a tunnel current corresponding to the application of the bias voltage, and determining change information of the tunnel current according to the tunnel current;

[0100] Determining the concavo-convex morphology of the NiV alloy target to be analyzed according to the change information of the tunnel current and the functional relationship between the distance between the probe of the high-resolution electrical microscope and the NiV alloy target to be analyzed;

[0101] According to the concavo-convex morphology, the size of the grains in the NiV alloy target to be analyzed is determined.

[0102] In one embodiment, the acquisition module 210 is configured to:

[0103] Calculating the average value and variance of the size of the grains in the NiV alloy target material to be analyzed;

[0104] Based on Gauss's theorem, according to the average value and variance of the size of the grains and the size of the grains, the characteristic vector value of each grain is calculated to obtain the characteristic vector distribution of the NiV alloy target to be analyzed;

[0105] Based on a convolution kernel of a preset size, performing convolution calculation on the characteristic vector distribution of the NiV alloy target material to be analyzed to obtain a convolution characteristic vector;

[0106] The NiV alloy target material to be analyzed is divided into crystal regions according to the convolution feature vector.

[0107] In one embodiment, the second determining module 230 is configured to:

[0108] Determining the preferred orientation of each crystal region according to the direction of change of the vanadium content in each crystal region, and determining the percentage of the preferred orientation of each crystal region by comparing the diffraction peak intensity of the randomly preferred oriented nickel;

[0109] Obtaining characteristic curves of nickel and vanadium elements corresponding to the percentage of the preferred orientation of each crystal region from the characteristic preferred orientation percentage library;

[0110] Input a preset objective function according to the percentage of the preferred orientation of each crystal region, the preferred orientation, and the characteristic curves of the nickel element and the vanadium element corresponding to each crystal region, obtain the proportional coefficient of the element corresponding to the characteristic curve when the objective function is minimum, and determine the placement position of the three-axis coordinate measuring machine according to the proportional coefficient;

[0111] The coarse-grained area and the fine-grained area are subjected to etching profile analysis based on a three-axis coordinate measuring instrument. The sputtering rate of the NiV alloy target in the coarse-grained area is determined according to the etching depth of the coarse-grained area, and the sputtering rate of the NiV alloy target in the fine-grained area is determined according to the etching depth of the fine-grained area.

[0112] In one embodiment, the fourth determination module 250 is configured to:

[0113] According to the texture of the coarse crystal target material in the coarse crystal region and the texture of the fine crystal target material in the fine crystal region, randomly taking a coarse crystal target material from the coarse crystal region and randomly taking a fine crystal target material from the fine crystal region, and performing recrystallization annealing heat treatment on the coarse crystal target material and the fine crystal target material to obtain an annealed coarse crystal target material and an annealed fine crystal target material;

[0114] Comparing the coarse grain target material in the coarse grain target material in the annealed coarse grain target material to obtain the coarse grain size change information for the annealed coarse grain target material in the coarse grain target material, and comparing the fine grain target material in the fine grain target material in the annealed coarse grain target material to obtain the fine grain size change information for the annealed fine grain target material in the fine grain target material;

[0115] According to the coarse grain size change information and the fine grain size change information, the microstructure and performance analysis results of the target material in each crystal region are determined.

[0116] An embodiment of the present invention further provides an electronic device, including:

[0117] a memory having a computer program stored thereon;

[0118] A processor is used to execute the computer program in the memory to implement the steps of any one of the aforementioned methods for analyzing the microstructure and performance of the NiV alloy target.

[0119] Based on the above ideal embodiments of this application, the relevant staff can make various changes and modifications without departing from the technical concept of this application through the above description. The technical scope of this application is not limited to the content in the specification, and its technical scope must be determined according to the scope of the claims.

[0120] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A method for analyzing the microstructure and performance of a NiV alloy target, characterized in that: The method comprises: Obtaining a NiV alloy target to be analyzed, and determining the size of grains in the NiV alloy target to be analyzed based on a high-resolution electrical microscope, and dividing the NiV alloy target to be analyzed into crystal regions according to the size of the grains in the NiV alloy target to be analyzed, wherein the crystal regions include coarse grain regions and fine grain regions; According to the grain size of each crystal region, determine the form window of the X-ray fluorescence spectrum analysis scanning the crystal region, based on the form window, apply X-ray fluorescence to each crystal region to obtain a fluorescence analysis value, and compare the fluorescence analysis value with a standard fluorescence value to obtain a X-ray fluorescence spectrum, and determine the vanadium content in each crystal region of the NiV alloy target to be analyzed according to the X-ray fluorescence spectrum; Determining the sputtering rate of the NiV alloy target in each crystal region according to the vanadium content in each crystal region; Determining the texture of the coarse-grained target material in the coarse-grained region and the texture of the fine-grained target material in the fine-grained region according to the sputtering rate of the NiV alloy target material in each of the crystal regions and the directional pole figure outside the target etching groove; According to the texture of the coarse crystal target material in the coarse crystal region and the texture of the fine crystal target material in the fine crystal region, a comparative analysis is performed on the coarse crystal target material in the coarse crystal region and the fine crystal target material in the fine crystal region to obtain microstructure and performance analysis results for the targets in each crystal region; The step of dividing the NiV alloy target material to be analyzed into crystal regions according to the size of the crystal grains in the NiV alloy target material to be analyzed comprises: Calculating the average value and variance of the size of the grains in the NiV alloy target material to be analyzed; Based on Gauss's theorem, according to the average value and variance of the size of the grains and the size of the grains, the characteristic vector value of each grain is calculated to obtain the characteristic vector distribution of the NiV alloy target to be analyzed; Based on a convolution kernel of a preset size, performing convolution calculation on the characteristic vector distribution of the NiV alloy target material to be analyzed to obtain a convolution characteristic vector; According to the convolution feature vector, the NiV alloy target to be analyzed is divided into crystal regions; The step of determining the sputtering rate of the NiV alloy target in each crystal region according to the vanadium content in each crystal region comprises: Determining the preferred orientation of each crystal region according to the direction of change of the vanadium content in each crystal region, and determining the percentage of the preferred orientation of each crystal region by comparing the diffraction peak intensity of the randomly preferred oriented nickel; Obtaining characteristic curves of nickel and vanadium elements corresponding to the percentage of the preferred orientation of each crystal region from the characteristic preferred orientation percentage library; Input a preset objective function according to the percentage of the preferred orientation of each crystal region, the preferred orientation, and the characteristic curves of the nickel element and the vanadium element corresponding to each crystal region, obtain the proportional coefficient of the element corresponding to the characteristic curve when the objective function is minimum, and determine the placement position of the three-axis coordinate measuring machine according to the proportional coefficient; The coarse-grained area and the fine-grained area are subjected to etching profile analysis based on a three-axis coordinate measuring instrument. The sputtering rate of the NiV alloy target in the coarse-grained area is determined according to the etching depth of the coarse-grained area, and the sputtering rate of the NiV alloy target in the fine-grained area is determined according to the etching depth of the fine-grained area.

2. The method according to claim 1, characterized in that: The step of determining the size of the grains in the NiV alloy target to be analyzed based on a high-resolution electrical microscope comprises: Determining the tunneling voltage between a probe of a high-resolution electrical microscope and the NiV alloy target to be analyzed; Applying a bias voltage having the same magnitude as the tunnel voltage to a probe of the high-resolution electrical microscope, acquiring a tunnel current corresponding to the application of the bias voltage, and determining change information of the tunnel current according to the tunnel current; Determining the concavo-convex morphology of the NiV alloy target to be analyzed according to the change information of the tunnel current and the functional relationship between the distance between the probe of the high-resolution electrical microscope and the NiV alloy target to be analyzed; According to the concavo-convex morphology, the size of the grains in the NiV alloy target to be analyzed is determined.

3. The method according to any one of claims 1 to 2, characterized in that: The step of comparatively analyzing the coarse crystal target in the coarse crystal region and the fine crystal target in the fine crystal region according to the texture of the coarse crystal target in the coarse crystal region and the texture of the fine crystal target in the fine crystal region to obtain microstructure and performance analysis results for the targets in each crystal region comprises: According to the texture of the coarse crystal target material in the coarse crystal region and the texture of the fine crystal target material in the fine crystal region, randomly taking a coarse crystal target material from the coarse crystal region and randomly taking a fine crystal target material from the fine crystal region, and performing recrystallization annealing heat treatment on the coarse crystal target material and the fine crystal target material to obtain an annealed coarse crystal target material and an annealed fine crystal target material; Comparing the coarse grain target material in the coarse grain target material in the annealed coarse grain target material to obtain the coarse grain size change information for the annealed coarse grain target material in the coarse grain target material, and comparing the fine grain target material in the fine grain target material in the annealed coarse grain target material to obtain the fine grain size change information for the annealed fine grain target material in the fine grain target material; According to the coarse grain size change information and the fine grain size change information, the microstructure and performance analysis results of the target material in each crystal region are determined.

4. A microstructure and performance analysis device for NiV alloy target, characterized in that: The device comprises: An acquisition module is configured to acquire a NiV alloy target to be analyzed, and determine the size of grains in the NiV alloy target to be analyzed based on a high-resolution electrical microscope, and divide the NiV alloy target to be analyzed into crystal regions according to the size of the grains in the NiV alloy target to be analyzed, wherein the crystal regions include coarse grain regions and fine grain regions; A first determination module is configured to determine a form window for scanning the crystal region by X-ray fluorescence spectrum analysis according to the grain size of each crystal region, apply X-ray fluorescence to each crystal region based on the form window to obtain a fluorescence analysis value, and compare the fluorescence analysis value with a standard fluorescence value to obtain a X-ray fluorescence spectrum, and determine the vanadium content in each crystal region in the NiV alloy target to be analyzed according to the X-ray fluorescence spectrum; A second determination module is configured to determine the sputtering rate of the NiV alloy target in each crystal region according to the vanadium content in each crystal region; A third determination module is configured to determine the texture of the coarse grain target material in the coarse grain region and the texture of the fine grain target material in the fine grain region according to the sputtering rate of the NiV alloy target material in each of the crystal regions and the directional pole figure outside the target etching groove; The fourth determination module is configured to compare and analyze the coarse grain target material in the coarse grain zone and the fine grain target material in the fine grain zone according to the texture of the coarse grain target material in the coarse grain zone and the texture of the fine grain target material in the fine grain zone, so as to obtain the microstructure and performance analysis results for the coarse grain target material; the acquisition module is configured to: Determining the tunneling voltage between a probe of a high-resolution electrical microscope and the NiV alloy target to be analyzed; Applying a bias voltage having the same magnitude as the tunnel voltage to a probe of the high-resolution electrical microscope, acquiring a tunnel current corresponding to the application of the bias voltage, and determining change information of the tunnel current according to the tunnel current; Determining the concavo-convex morphology of the NiV alloy target to be analyzed according to the change information of the tunnel current and the functional relationship between the distance between the probe of the high-resolution electrical microscope and the NiV alloy target to be analyzed; According to the concavo-convex morphology, the size of the grains in the NiV alloy target to be analyzed is determined; the acquisition module is configured to: Calculating the average value and variance of the size of the grains in the NiV alloy target material to be analyzed; Based on Gauss's theorem, according to the average value and variance of the size of the grains and the size of the grains, the characteristic vector value of each grain is calculated to obtain the characteristic vector distribution of the NiV alloy target to be analyzed; Based on a convolution kernel of a preset size, performing convolution calculation on the characteristic vector distribution of the NiV alloy target material to be analyzed to obtain a convolution characteristic vector; The NiV alloy target material to be analyzed is divided into crystal regions according to the convolution feature vector.

5. The device according to claim 4, characterized in that The second determining module is configured to: Determining the preferred orientation of each crystal region according to the direction of change of the vanadium content in each crystal region, and determining the percentage of the preferred orientation of each crystal region by comparing the diffraction peak intensity of the randomly preferred oriented nickel; Obtaining characteristic curves of nickel and vanadium elements corresponding to the percentage of the preferred orientation of each crystal region from the characteristic preferred orientation percentage library; Input a preset objective function according to the percentage of the preferred orientation of each crystal region, the preferred orientation, and the characteristic curves of the nickel element and the vanadium element corresponding to each crystal region, obtain the proportional coefficient of the element corresponding to the characteristic curve when the objective function is minimum, and determine the placement position of the three-axis coordinate measuring machine according to the proportional coefficient; The coarse-grained area and the fine-grained area are subjected to etching profile analysis based on a three-axis coordinate measuring instrument. The sputtering rate of the NiV alloy target in the coarse-grained area is determined according to the etching depth of the coarse-grained area, and the sputtering rate of the NiV alloy target in the fine-grained area is determined according to the etching depth of the fine-grained area.

6. An electronic device, characterized in that: include: a memory having a computer program stored thereon; A processor is used to execute the computer program in the memory to implement the steps of the microstructure and performance analysis method of the NiV alloy target material as described in any one of claims 1-3.

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