Voltage regulation device, method, device, equipment and medium

Abstract

An embodiment of the present invention provides a voltage regulation device, method, device, electronic device and computer storage medium. The device includes a first branch and a reference voltage output circuit. The first branch is a branch formed by a thermistor and a first resistor connected in series. The voltage across the first branch is a driving voltage of a transistor. The resistance value of the thermistor is negatively correlated with the junction temperature of the transistor. The reference voltage output circuit is used to provide a DC reference voltage to both ends of the thermistor.

Description

Technical Field

[0001] The present invention relates to a voltage regulating device, and in particular to a voltage regulating device, method, device, electronic equipment and computer storage medium. Background Art

[0002] In the related art, the driving voltage of the transistor is generally adjusted by sampling the load current to reduce the loss of the transistor. However, in the actual circuit, the load current cannot fully reflect the temperature of the transistor. For example, in a circuit with multiple transistors in parallel, the current of a single transistor may not be positively correlated with the load current. There may be load imbalance, three-phase imbalance, and uneven current of parallel devices. Even if the sampled load current is in a normal state, a certain transistor may be overloaded, resulting in excessive temperature rise and excessive loss. Therefore, the method of sampling the load current cannot accurately adjust the driving voltage of the transistor. In summary, how to accurately adjust the driving voltage of the transistor is a technical problem that needs to be solved urgently. Summary of the invention

[0003] Embodiments of the present invention provide a voltage regulating device, method, device, electronic equipment and computer storage medium.

[0004] An embodiment of the present invention provides a voltage regulating device, the device comprising a first branch and a reference voltage output circuit, the first branch is a branch formed by a thermistor and a first resistor connected in series, the voltage across the first branch is a driving voltage of a transistor; wherein,

[0005] The resistance value of the thermistor is negatively correlated with the junction temperature of the transistor, and the reference voltage output circuit is used to provide a DC reference voltage to both ends of the thermistor.

[0006] In one implementation, the reference voltage output circuit includes a three-terminal voltage regulator; wherein,

[0007] The input end of the three-terminal voltage regulator is connected to the positive electrode of the first power supply, the ground end of the three-terminal voltage regulator is grounded, the output end of the three-terminal voltage regulator is connected to one end of the thermistor, and the other end of the thermistor is grounded.

[0008] It can be seen that based on the three-terminal voltage regulator providing a DC reference voltage to both ends of the thermistor, the driving voltage of the transistor is only affected by the resistance value of the thermistor, which is beneficial to adjust the driving voltage of the transistor according to the relationship between the resistance value of the thermistor and the junction temperature of the transistor.

[0009] In one implementation, the device further includes a first voltage limiting circuit; wherein,

[0010] The first voltage limiting circuit is connected in parallel with the first branch, and is used to limit the voltage across the first branch so that the voltage across the first branch is less than or equal to the voltage limiting value of the first voltage limiting circuit.

[0011] It can be seen that the voltage across the first branch is limited by the first voltage limiting circuit so that the driving voltage of the transistor does not exceed its maximum operating voltage, thereby protecting the transistor from being damaged.

[0012] In one implementation, the device further includes a second voltage limiting circuit; wherein,

[0013] The second voltage limiting circuit is connected between the first power supply and the transistor, and is used to limit the voltage across the first branch so that the voltage across the first branch is greater than or equal to the voltage limiting value of the second voltage limiting circuit.

[0014] It can be seen that the voltage across the first branch is limited by the second voltage limiting circuit so that the driving voltage of the transistor is not lower than its rated operating voltage, thereby enabling the transistor to work normally and not fail to conduct due to too low a driving voltage.

[0015] An embodiment of the present invention further provides a voltage regulation method, which is applied to a voltage regulation device, and the voltage regulation device is used to regulate the driving voltage of a transistor. The method includes:

[0016] Acquiring a first temperature value of the transistor;

[0017] When the first temperature value is within a preset temperature range, determining the driving voltage of the transistor to be the rated operating voltage of the transistor;

[0018] When the first temperature value is greater than a first threshold, the driving voltage of the transistor is controlled to increase, and the first threshold is greater than or equal to an upper limit of the preset temperature range.

[0019] In the above solution, the step of controlling the driving voltage of the transistor to increase comprises:

[0020] The driving voltage of the transistor is controlled to increase to a first voltage value, where the first voltage value is positively correlated with the first temperature value.

[0021] It can be seen that the driving voltage of the control transistor increases with the increase of the first temperature value, that is, the driving voltage of the transistor can be adjusted instantly according to the temperature change of the transistor, and the working state of the transistor can be directly and effectively controlled.

[0022] In the above scheme, the method further comprises:

[0023] A first voltage limiting process is performed on the driving voltage of the transistor so that the driving voltage of the transistor is less than or equal to the preset voltage limiting value.

[0024] It can be seen that by performing the first voltage limiting process on the driving voltage of the transistor, the driving voltage of the transistor is made less than or equal to the preset voltage limiting value, thereby protecting the transistor from being damaged.

[0025] In the above solution, before controlling the driving voltage of the transistor to increase to the first voltage value, the method further includes: determining a first voltage value corresponding to the first temperature value;

[0026] The step of controlling the driving voltage of the transistor to increase to a first voltage value comprises:

[0027] When the first voltage value is less than or equal to a preset maximum voltage, the driving voltage of the transistor is controlled to increase to the first voltage value.

[0028] In the above scheme, the method further comprises:

[0029] When the first voltage value is greater than the preset maximum voltage, the driving voltage of the transistor is determined to be the preset maximum voltage.

[0030] It can be seen that by pre-judging whether the target value of the transistor driving voltage increase exceeds the safe operating range of the transistor, the transistor can be controlled to operate within the safe operating range and protected from being damaged.

[0031] In the above scheme, after the driving voltage of the transistor is controlled to increase, the method further includes:

[0032] Acquiring a second temperature value of the transistor;

[0033] When the variation trend of the second temperature value is a decreasing trend, controlling the driving voltage of the transistor to decrease;

[0034] When the second temperature value is within a preset temperature range, the driving voltage of the transistor is determined to be the rated operating voltage.

[0035] It can be seen that whether to control the driving voltage of the transistor to be reduced can be determined based on the re-acquired second temperature value of the transistor, that is, the driving voltage of the transistor can be determined based on the temperature change of the transistor, which can directly reflect the working condition of the transistor.

[0036] The embodiment of the present invention further provides a voltage regulating device, the device at least comprising:

[0037] An acquisition module, used for acquiring a first temperature value of the transistor;

[0038] a control module, configured to determine the driving voltage of the transistor to be the rated operating voltage of the transistor when the first temperature value is within a preset temperature range;

[0039] When the first temperature value is greater than a first threshold, the driving voltage of the transistor is controlled to increase, and the first threshold is greater than or equal to an upper limit of the preset temperature range.

[0040] In one implementation, the control module is used to control the driving voltage of the transistor to increase, including:

[0041] The driving voltage of the transistor is controlled to increase to a first voltage value, where the first voltage value is positively correlated with the first temperature value.

[0042] In one implementation, the device is further used to: perform a first voltage limiting process on the driving voltage of the transistor so that the driving voltage of the transistor is less than or equal to the preset voltage limiting value.

[0043] In one implementation, the control module is further used to determine a first voltage value corresponding to the first temperature value before controlling the driving voltage of the transistor to increase to the first voltage value;

[0044] The control module is used to control the driving voltage of the transistor to increase to a first voltage value, including:

[0045] When the first voltage value is less than or equal to a preset maximum voltage, the driving voltage of the transistor is controlled to increase to the first voltage value.

[0046] In one implementation, the device is further configured to: when the first voltage value is greater than the preset maximum voltage, determine the driving voltage of the transistor to be the preset maximum voltage.

[0047] In one implementation, the control module, after controlling the driving voltage of the transistor to increase, is further configured to:

[0048] Acquiring a second temperature value of the transistor;

[0049] When the variation trend of the second temperature value is a decreasing trend, controlling the driving voltage of the transistor to decrease;

[0050] When the second temperature value is within a preset temperature range, the driving voltage of the transistor is determined to be the rated operating voltage.

[0051] An embodiment of the present invention further provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements any one of the above-mentioned voltage regulation methods when executing the program.

[0052] An embodiment of the present invention further provides a computer storage medium on which a computer program is stored. When the computer program is executed by a processor, any one of the above voltage regulation methods is implemented.

[0053] A voltage regulating device, method, device, electronic device and computer storage medium provided based on the embodiments of the present invention, the voltage regulating device includes a first branch and a reference voltage output circuit, the first branch is a branch formed by a thermistor and a first resistor connected in series, and the voltage across the first branch is a driving voltage of a transistor; wherein the resistance value of the thermistor is negatively correlated with the junction temperature of the transistor, and the reference voltage output circuit is used to provide a DC reference voltage to both ends of the thermistor.

[0054] It can be seen that in the embodiment of the present invention, the voltage regulating device includes a first branch and a reference voltage output circuit, wherein the first branch is a branch consisting of a thermistor and a first resistor connected in series, the voltage at both ends of the first branch is the driving voltage of the transistor, and the reference voltage output circuit is used to provide a DC reference voltage to both ends of the thermistor, and the resistance value of the thermistor is negatively correlated with the junction temperature of the transistor. Therefore, when the transistor works at a higher temperature, the resistance value of the thermistor will decrease, and the voltage at both ends of the first branch will increase, that is, the driving voltage of the transistor will also increase, and the on-resistance of the transistor will decrease as its driving voltage increases, that is, by increasing the driving voltage of the transistor, its on-voltage drop can be reduced, thereby reducing the conduction loss of the transistor. It can be seen that the embodiment of the present invention adjusts the driving voltage of the transistor based on the relationship between the resistance value of the thermistor and the junction temperature of the transistor, thereby adjusting the on-resistance of the transistor, and then reducing the conduction loss of the transistor.

[0055] It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] Figure 1 A schematic diagram of the structure of a voltage regulating device provided by an embodiment of the present invention;

[0057] Figure 2 is the thermistor R in the embodiment of the present invention NTC The relationship between the resistance value and temperature;

[0058] Figure 3 A circuit schematic diagram of a specific implementation of a voltage regulating device provided by an embodiment of the present invention;

[0059] Figure 4 A schematic diagram of a flow chart of a voltage regulation method provided by an embodiment of the present invention;

[0060] Figure 5 A schematic diagram of the structure of another voltage regulating device provided by an embodiment of the present invention;

[0061] Figure 6 A schematic diagram of a specific implementation flow of a voltage regulation method provided by an embodiment of the present invention;

[0062] Figure 7 A schematic diagram of another voltage regulating device provided by an embodiment of the present invention;

[0063] Figure 8 A schematic diagram of the structure of an electronic device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0064] With the development of electronic technology, transistors are gradually being widely used in power electronic circuit design, such as silicon carbide metal-oxide semiconductor field-effect transistor (MOSFET), insulated gate bipolar transistor (IGBT), and silicon-based MOSFET. However, the on-resistance of a transistor generally has a positive temperature coefficient, that is, the higher the temperature, the greater the on-resistance. Therefore, when the transistor operates at a higher temperature, its on-resistance will also increase, resulting in an increase in the conduction loss of the transistor. According to the output characteristics of the transistor, the on-resistance of the transistor will decrease as its driving voltage increases, so the on-resistance can be reduced by increasing the driving voltage of the transistor, thereby reducing the conduction loss of the transistor.

[0065] In view of the problem that when the transistor works at a higher temperature, the conduction loss of the transistor is high, but the conduction loss of the transistor cannot be reduced by accurately adjusting the driving voltage of the transistor, a technical solution of the embodiment of the present invention is proposed. The following is a further detailed description of the embodiment of the present invention in conjunction with the accompanying drawings and embodiments. It should be understood that the embodiments provided herein are only used to explain the present invention and are not intended to limit the present invention. In addition, the embodiments provided below are partial embodiments for implementing the present invention, rather than providing all embodiments for implementing the present invention. In the absence of conflict, the technical solutions recorded in the embodiments of the present invention can be implemented in any combination.

[0066] It should be noted that, in the embodiments of the present invention, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a method or apparatus including a series of elements includes not only the elements explicitly recorded, but also includes other elements not explicitly listed, or also includes elements inherent to the implementation of the method or apparatus. In the absence of further restrictions, an element defined by the sentence "includes a ..." does not exclude the existence of other related elements (such as steps in a method or units in a device, for example, a unit may be a part of a circuit, a part of a processor, a part of a program or software, etc.) in the method or apparatus including the element.

[0067] The term "and / or" herein is only a description of the association relationship of the associated objects, indicating that there may be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the term "at least one" herein represents any combination of at least two of any one or more of a plurality of. For example, including at least one of A, B, and C can represent including any one or more elements selected from the set consisting of A, B, and C.

[0068] For example, a voltage regulating device provided in an embodiment of the present invention includes a series of circuits, but a voltage regulating device provided in an embodiment of the present invention is not limited to including the circuits explicitly recorded, and may also include circuits required to obtain relevant information or perform processing based on information. Similarly, a voltage regulating method provided in an embodiment of the present invention includes a series of steps, but a voltage regulating method provided in an embodiment of the present invention is not limited to the recorded steps.

[0069] An embodiment of the present invention provides a voltage regulating device, the device comprising a first branch and a reference voltage output circuit, the first branch is a branch formed by a thermistor and a first resistor connected in series, the voltage across the first branch is a driving voltage of a transistor; wherein,

[0070] The resistance value of the thermistor is negatively correlated with the junction temperature of the transistor, and the reference voltage output circuit is used to provide a DC reference voltage to both ends of the thermistor.

[0071] Figure 1 A schematic diagram of a voltage regulator according to an embodiment of the present invention is shown in FIG. Figure 1 The voltage regulating device comprises: a first branch 1 and a reference voltage output circuit 2, wherein the first branch 1 is a first resistor R1 and a thermistor R NTC The two ends of the first branch 1 are connected to transistors, where the transistor can be an IGBT or a MOSFET, which is not limited in the embodiment of the present invention.

[0072] For example, when the transistor is an NPN-type IGBT, the collector of the IGBT is connected to one end of the first resistor R1, and the base of the IGBT is connected to the thermistor R NTC When the transistor is an N-type MOSFET, the gate of the MOSFET is connected to one end of the first resistor R1, and the source of the MOSFET is connected to the thermistor R NTC one end of the .

[0073] In the embodiment of the present invention, the voltage across the first branch 1 is the driving voltage of the transistor. Here, the driving voltage of the transistor refers to the power supply voltage when the transistor starts to work, and is denoted by V g Indicates that the reference voltage output circuit 2 is used to provide a reference voltage to the thermistor R NTC A DC reference voltage is provided at both ends of the circuit. Here, the reference voltage refers to a voltage in the circuit that is independent of the load, power supply, temperature drift, time, etc. and can remain constant.

[0074] In the embodiment of the present invention, the thermistor R NTC It is a negative temperature coefficient thermistor (NTC thermistor), that is, the thermistor R NTC The resistance value of the thermistor decreases as the temperature increases. NTC Integrated in the transistor module, it is also possible to place an additional thermistor R in the voltage regulator NTC , general thermistor R NTC Close to the center of the transistor, the closer to the center, the higher the accuracy of the measured temperature.

[0075] In the embodiment of the present invention, the thermistor R NTC The temperature of the transistor is affected by the transistor. When the transistor works for a period of time, the temperature of the transistor rises, and the thermistor R close to the transistor NTC The temperature of the thermistor R NTC The resistance value of the thermistor decreases as the temperature increases, that is, the thermistor R NTC The resistance value of the thermistor R is negatively correlated with the junction temperature of the transistor, where the junction temperature represents the actual operating temperature of the transistor. NTC The resistance value can reflect the change of transistor temperature and can be used to detect the temperature of the transistor.

[0076] For example, thermistor R NTC Sampling the junction temperature of the transistor, Figure 2 The thermistor R in the embodiment of the present invention is shown. NTCThe relationship between the resistance value and temperature curve, refer to Figure 2 , when the temperature is T TH When thermistor R NTC The corresponding resistance value is R TH ; When the temperature is T max , that is, when the temperature is the highest, the thermistor R NTC The corresponding resistance value is R min , that is, the resistance value is the smallest, here, T max >T TH , R TH >R min .

[0077] In the embodiment of the present invention, when the transistor operates in a higher temperature range, the thermistor R NTC The driving voltage of the transistor is adjusted. When the junction temperature of the transistor rises, the thermistor R close to the transistor NTC The temperature of the thermistor R NTC When the resistance value of the transistor decreases, the voltage across the first branch 1 increases. Since the voltage across the first branch 1 is the driving voltage of the transistor, the driving voltage of the transistor increases.

[0078] In the embodiment of the present invention, when the transistor operates in the normal temperature range, the thermistor R NTC The temperature of the thermistor R NTC The resistance value of the thermistor R NTC The driving voltage of the transistor is not regulated.

[0079] It can be seen that in the embodiment of the present invention, the voltage regulating device includes a first branch 1 and a reference voltage output circuit 2. The first branch 1 is composed of a thermistor R NTC The reference voltage output circuit 2 is used to provide a DC reference voltage to both ends of the thermistor. The two ends of the first branch 1 are connected to the transistor, and the driving voltage of the transistor is the voltage at both ends of the first branch 1. Therefore, the thermistor R NTC The driving voltage of the transistor is adjusted. When the junction temperature of the transistor rises, the thermistor R close to the transistor NTC The temperature of the thermistor R NTC The resistance value of the thermistor is reduced, so that the voltage across the first branch 1 increases, thereby increasing the driving voltage of the transistor, and the on-resistance of the transistor decreases as its driving voltage increases, that is, by increasing the driving voltage of the transistor, its on-voltage drop can be reduced, thereby reducing the conduction loss of the transistor. It can be seen that the embodiment of the present invention is based on the thermistor R NTCWhen the temperature of the transistor rises, the driving voltage of the transistor is increased and the conduction loss of the transistor is reduced.

[0080] In some implementations, the reference voltage output circuit includes a three-terminal voltage regulator; wherein,

[0081] The input end of the three-terminal voltage regulator is connected to the positive electrode of the first power supply, the ground end of the three-terminal voltage regulator is grounded, the output end of the three-terminal voltage regulator is connected to one end of the thermistor, and the other end of the thermistor is grounded.

[0082] In the embodiment of the present invention, the device further comprises a first power supply 6, which is used to provide a DC voltage to the voltage regulating device. The voltage value of the first power supply 6 can be represented by Vin. The three-terminal voltage regulator is used to provide a DC voltage to the thermistor R NTC The two ends of the DC reference voltage are provided, and the DC reference voltage is V ref To express, the driving voltage of the transistor is only affected by the thermistor R NTC The resistance value affects the driving voltage of the transistor with V g To express, then V g =V ref (1+R1 / R NTC ).

[0083] It should be noted that the output voltage of the three-terminal voltage regulator is always a constant voltage, and because the three-terminal voltage regulator has only three lead terminals, it has the advantages of fewer external components, easy use, stable performance, and low price.

[0084] In some embodiments, the device further comprises a first voltage limiting circuit; wherein,

[0085] The first voltage limiting circuit is connected in parallel with the first branch, and is used to limit the voltage across the first branch so that the voltage across the first branch is less than or equal to the voltage limiting value of the first voltage limiting circuit.

[0086] In the embodiment of the present invention, see Figure 1 The voltage regulating device also includes a first voltage limiting circuit 3, which is used to limit the voltage across the first branch 1, thereby limiting the driving voltage of the transistor to be less than or equal to the voltage limiting value of the first voltage limiting circuit.

[0087] In the embodiment of the present invention, when the temperature of the transistor increases, the thermistor R NTC The temperature of the thermistor R NTC The resistance value of the transistor decreases, which makes the driving voltage of the transistor increase all the time. However, based on the properties of the transistor, the transistor has a maximum operating voltage, that is, the maximum continuous operating voltage allowed at both ends of the transistor, recorded as V g-maxWhen the driving voltage of the transistor exceeds its maximum operating voltage, the transistor may be damaged. Therefore, it is necessary to limit the driving voltage of the transistor within a certain safe operating range. When the driving voltage of the transistor increases to the voltage limit value of the first voltage limit circuit 3, the driving voltage of the transistor is kept unchanged and no longer increases, that is, V g ≤V g-max .

[0088] In the embodiment of the present invention, the voltage limiting device in the first voltage limiting circuit 3 can be a clamping diode or a voltage stabilizing diode, which is not limited in the embodiment of the present invention. It should be noted that the clamping diode refers to a diode used to limit the potential of a certain point in the circuit; the voltage stabilizing diode refers to a diode that uses the reverse breakdown state of the PN junction, and its current can vary within a wide range while the voltage remains basically unchanged, to stabilize the voltage.

[0089] In the embodiment of the present invention, the maximum operating voltage value of the transistor may be determined as the voltage limiting value of the first voltage limiting circuit 3, or the voltage limiting value of the first voltage limiting circuit 3 may be determined based on an existing one, which is not limited in the embodiment of the present invention.

[0090] It can be seen that the voltage across the first branch 1 is limited by the first voltage limiting circuit 3 so that the driving voltage of the transistor does not exceed its maximum operating voltage, thereby protecting the transistor from being damaged.

[0091] In some embodiments, the device further comprises a second voltage limiting circuit; wherein,

[0092] The second voltage limiting circuit is connected between the first power supply and the transistor, and is used to limit the voltage across the first branch so that the voltage across the first branch is greater than or equal to the voltage limiting value of the second voltage limiting circuit.

[0093] In the embodiment of the present invention, see Figure 1 The voltage regulating device further includes a second voltage limiting circuit 4, which is used to limit the voltage across the first branch 1, so that the voltage across the first branch 1 is greater than or equal to the voltage limiting value of the second voltage limiting circuit, thereby limiting the driving voltage of the transistor to be greater than or equal to its rated working voltage value. It should be noted that the rated working voltage refers to the optimal voltage of the transistor when it is working normally, also called the nominal voltage, recorded as V g-nom When the driving voltage of the transistor is lower than the rated operating voltage, the transistor will not work normally.

[0094] In the embodiment of the present invention, when the temperature of the transistor is within the normal range, it is necessary to make the driving voltage of the transistor greater than or equal to its rated operating voltage value, that is, V g ≥V g-nomTherefore, the second voltage limiting circuit 4 limits the voltage across the first branch 1. Here, the voltage limiting device in the second voltage limiting circuit 4 can be a clamping diode or a voltage regulator diode, which is not limited in the embodiment of the present invention.

[0095] In the embodiment of the present invention, the rated operating voltage value of the transistor may be determined as the voltage limiting value of the second voltage limiting circuit 4, or the voltage limiting value of the second voltage limiting circuit 4 may be determined based on an existing one, which is not limited in the embodiment of the present invention.

[0096] In the embodiment of the present invention, the driving voltage V g =Vin-V 1 , here, V 1 Represents the voltage drop of the voltage limiting device. By selecting a suitable voltage limiting device, V g ≥V g-nom , then the voltage drop V of the voltage limiting device is required 1 ≤Vin-V g-nom , so that the driving voltage of the transistor is greater than or equal to its rated operating voltage, that is, V g ≥V g-nom , V g ≥Vin-V 1 .

[0097] It can be seen that the voltage across the first branch 1 is limited by the second voltage limiting circuit 4 so that the driving voltage of the transistor is not lower than its rated operating voltage, thereby enabling the transistor to work normally and not fail to conduct due to too low a driving voltage.

[0098] In the embodiment of the present invention, see Figure 1 The voltage regulating device further comprises a current amplifying circuit 5, which is used to amplify the current provided by the first power supply, so as to drive the transistor to work normally. The current amplifying circuit 5 may comprise a current amplifying transistor.

[0099] Figure 3 A circuit schematic diagram of a specific implementation of a voltage regulating device provided by an embodiment of the present invention is shown in the figure. The voltage regulating device includes: a first resistor R1, a second resistor R2, a third resistor R3, a thermistor R NTC , a voltage regulator diode Z1, a three-terminal voltage regulator Q1, a current amplifying transistor T1, a first clamping diode D1, ..., an nth clamping diode Dn, and a first power supply Vin.

[0100] In the embodiment of the present invention, the first resistor R1 and the thermistor R NTC The first branch is connected to the transistor, and the voltage across the first branch is the driving voltage V of the transistor. gThe input end of the three-terminal voltage regulator Q1 is connected to the base of the current amplifier transistor T1, the ground end of the three-terminal voltage regulator Q1 is grounded, and the output end of the three-terminal voltage regulator Q1 is connected to the thermistor R NTC The collector of the current amplifying transistor T1 is connected to the positive electrode of the first power supply Vin, and the emitter of the current amplifying transistor T1 is connected to one end of the first resistor R1; the voltage regulator diode Z1 is connected to the two ends of the first branch, and n clamping diodes are connected in parallel to the current amplifying transistor T1; the second resistor R2 is connected between the input end of the three-terminal voltage regulator Q1 and the base of the current amplifying transistor T1, and the third resistor R3 is connected between the first power supply Vin and the input end of the three-terminal voltage regulator Q1.

[0101] In the embodiment of the present invention, the three-terminal voltage regulator Q1 is used to supply thermistor R NTC A DC reference voltage is provided at both ends, the current amplifying transistor T1 is used to amplify the current signal of the first power supply Vin, the voltage stabilizing diode Z1 is used to ensure that the driving voltage of the transistor does not exceed its maximum operating voltage, and the clamping diodes D1, ..., and the clamping diode Dn are used to ensure that the driving voltage of the transistor is not lower than its rated operating voltage.

[0102] In the embodiment of the present invention, when the transistor operates in a higher temperature range, the thermistor R close to the transistor NTC The temperature rises, the thermistor R NTC The resistance value of the thermistor R is reduced, so that the voltage across the first branch 1 increases, thereby increasing the driving voltage of the transistor; when the transistor works in the normal temperature range, the thermistor R NTC The temperature of the thermistor R NTC The resistance value of the thermistor R does not change, so the voltage across the first branch 1 does not change either. NTC The driving voltage of the transistor is not regulated.

[0103] Based on the same technical concept as the above-mentioned embodiment, the embodiment of the present invention further provides a voltage regulation method, which is applied to a voltage regulation device, wherein the voltage regulation device is used to regulate the driving voltage of a transistor; see Figure 4 , is a flow chart of a voltage regulation method provided by an embodiment of the present invention, and the flow chart may include:

[0104] Step 401: Obtain a first temperature value of a transistor.

[0105] In the embodiment of the present invention, the temperature of the transistor can be detected based on a thermistor, or based on a temperature sensor. When the temperature of the transistor is detected based on a thermistor, the thermistor can be integrated into the transistor module. If a single transistor or other package without a thermistor is used, it is necessary to additionally prevent the thermistor from being close to the transistor for detection. When the thermistor is not integrated inside the transistor, the temperature obtained by its detection cannot directly reflect the junction temperature of the transistor. Therefore, it is necessary to make a one-to-one correspondence between the temperature obtained by the thermistor detection and the junction temperature of the transistor, so as to calculate the junction temperature of the transistor based on the temperature obtained by the thermistor detection.

[0106] Step 402: when the first temperature value is within a preset temperature range, determining the driving voltage of the transistor as the rated operating voltage of the transistor;

[0107] When the first temperature value is greater than a first threshold, the driving voltage of the control transistor is increased, and the first threshold is greater than or equal to an upper limit of a preset temperature range.

[0108] In an embodiment of the present invention, the preset temperature range can be pre-set based on existing experience. Here, the preset temperature range indicates that the temperature value of the transistor is low and within the normal range. At this time, the loss of the transistor is low. Therefore, when the first temperature value is within the preset temperature range, the driving voltage of the transistor is determined to be its rated operating voltage, that is, there is no need to adjust the driving voltage of the transistor.

[0109] In an embodiment of the present invention, the first threshold value can be pre-set based on existing experience, and the first threshold value is greater than or equal to the upper limit of the preset temperature range. That is, when the first temperature of the transistor is greater than the first threshold value, it means that the current temperature of the transistor is high, and the on-resistance of the transistor is high, which increases the conduction loss of the transistor. Therefore, it is necessary to reduce the loss of the transistor.

[0110] In the embodiment of the present invention, based on the output characteristics of the transistor, the on-resistance of the transistor decreases as its driving voltage increases. Therefore, when the first temperature of the transistor is greater than the first threshold, controlling the driving voltage of the transistor to increase can reduce the on-resistance of the transistor, thereby reducing the loss of the transistor.

[0111] For example, Figure 5 As shown, the voltage regulating device includes a power supply module 501, a temperature detection module 502, and a voltage regulating module 503. The power supply module 501 is used to provide voltage to the voltage regulating device, the temperature detection module 502 is used to detect the junction temperature of the transistor, and the voltage regulating module 503 is used to adjust the driving voltage of the transistor according to the junction temperature of the transistor obtained by the temperature detection module 502.

[0112] It can be seen that in the embodiment of the present invention, the first temperature of the transistor is detected and the driving voltage of the transistor is adjusted according to the first temperature of the transistor. When the first temperature value is greater than the first threshold value, the driving voltage of the transistor is controlled to increase, so that the on-resistance of the transistor can be reduced, thereby effectively reducing the loss of the transistor. Moreover, the temperature can directly reflect the working condition of the transistor. By adjusting the driving voltage of the transistor through the change of temperature, the loss of the transistor can be directly and efficiently reduced.

[0113] In some implementations, controlling the driving voltage of the transistor to increase includes:

[0114] The driving voltage of the transistor is controlled to increase to a first voltage value, where the first voltage value is positively correlated with the first temperature value.

[0115] In some embodiments, the driving voltage of the control transistor increases with the increase of the first temperature value, that is, the higher the first temperature value of the transistor is, the higher the driving voltage of the transistor is, and the first voltage value is positively correlated with the first temperature value.

[0116] In some embodiments, the method further comprises:

[0117] A first voltage limiting process is performed on the driving voltage of the transistor so that the driving voltage of the transistor is less than or equal to the preset voltage limiting value.

[0118] In some embodiments, the preset voltage limit value can be pre-set based on existing experience. As the temperature of the transistor increases, the driving voltage of the control transistor gradually increases. However, when the driving voltage of the transistor exceeds a certain range, the transistor may be damaged due to excessive voltage. Therefore, it is necessary to limit the driving voltage of the transistor to a certain safe operating range, that is, the driving voltage of the transistor needs to be limited.

[0119] It can be seen that by performing the first voltage limiting process on the driving voltage of the transistor, the driving voltage of the transistor is made less than or equal to the preset voltage limiting value, thereby protecting the transistor from being damaged.

[0120] In some embodiments, before controlling the driving voltage of the transistor to increase to a first voltage value, the method further includes: determining a first voltage value corresponding to the first temperature value;

[0121] The step of controlling the driving voltage of the transistor to increase to a first voltage value comprises:

[0122] When the first voltage value is less than or equal to a preset maximum voltage, the driving voltage of the transistor is controlled to increase to the first voltage value.

[0123] In some embodiments, the method further comprises:

[0124] When the first voltage value is greater than the preset maximum voltage, the driving voltage of the transistor is determined to be the preset maximum voltage.

[0125] In some embodiments, the preset maximum voltage represents the maximum continuous operating voltage allowed at both ends of the transistor. When the driving voltage of the transistor exceeds its maximum operating voltage, the transistor may be damaged.

[0126] In some embodiments, the driving voltage of the transistor corresponding to the temperature value of the transistor can be preset, so that the driving voltage of the transistor can be adjusted according to the first temperature value of the transistor obtained. After determining the first voltage value corresponding to the first temperature value according to the first temperature value of the transistor, it is determined whether the first voltage value is less than or equal to the preset maximum voltage. If so, it means that the first voltage value is within the safe operating range of the transistor, and the driving voltage of the transistor can be controlled to increase to the first voltage value; if not, it means that the first voltage value has exceeded the safe operating range of the transistor, and the driving voltage of the transistor is determined as the preset maximum voltage, and the driving voltage of the transistor is controlled to increase to the preset maximum voltage.

[0127] It can be seen that by pre-judging whether the target value of the transistor driving voltage increase exceeds the safe operating range of the transistor, the transistor can be controlled to operate within the safe operating range and protected from being damaged.

[0128] In some implementations, after controlling the driving voltage of the transistor to increase, the method further includes:

[0129] Acquiring a second temperature value of the transistor;

[0130] When the variation trend of the second temperature value is a decreasing trend, controlling the driving voltage of the transistor to decrease;

[0131] When the second temperature value is within a preset temperature range, the driving voltage of the transistor is determined to be the rated operating voltage.

[0132] In some embodiments, the second temperature value of the transistor refers to the temperature value of the transistor obtained by re-detection after the driving voltage of the control transistor has been increased. According to the change trend of the second temperature value, it can be determined whether the driving voltage of the control transistor is reduced.

[0133] In some embodiments, when the change trend of the second temperature value is a decreasing trend, it indicates that the loss of the transistor has been reduced, and therefore, the driving voltage of the transistor can be reduced. Here, the driving voltage of the transistor can be controlled to be reduced according to the driving voltage of the transistor corresponding to the pre-set temperature value of the transistor.

[0134] In some embodiments, when the second temperature value is within the preset temperature range, it indicates that the temperature of the transistor is already within the normal temperature range, that is, there is no need to adjust the driving voltage of the transistor, and therefore, the driving voltage of the transistor is determined to be its rated operating voltage.

[0135] Figure 6 A flowchart of a specific implementation of a voltage regulation method provided by an embodiment of the present invention is shown as follows: Figure 6 As shown, the process may include:

[0136] Step 601: Obtain a first temperature value of a transistor.

[0137] Step 602: Determine whether the first temperature value is greater than a first threshold value, if so, execute step 603; if not, execute step 604.

[0138] Step 603: Determine whether the driving voltage of the transistor reaches the maximum voltage, if so, execute step 604; if not, execute step 605.

[0139] Step 604: Keep the driving voltage of the transistor unchanged and execute step 601.

[0140] Step 605 : Control the driving voltage of the transistor to increase, and execute step 601 .

[0141] Those skilled in the art will appreciate that, in the above method of specific implementation, the order in which the steps are written does not imply a strict execution order and does not constitute any limitation on the implementation process. The specific execution order of the steps should be determined by their functions and possible internal logic.

[0142] Based on the foregoing embodiments, an embodiment of the present invention further provides a voltage regulating device, which includes the units included and the modules included in the units, and can be implemented by a processor and a memory in an electronic device; of course, it can also be implemented by a specific logic circuit; in the implementation process, the above-mentioned processor can be at least one of an application-specific integrated circuit (Application Specific Integrated Circuit, ASIC), a digital signal processor (Digital Signal Processor, DSP), a digital signal processing device (Digital Signal Processing Device, DSPD), a programmable logic device (Programmable Logic Device, PLD), a field programmable gate array (Field Programmable Gate Array, FPGA), a central processing unit (Central Processing Unit, CPU), a controller, a microcontroller, and a microprocessor.

[0143] Figure 7 A schematic diagram of a voltage regulating device provided by an embodiment of the present invention, see Figure 7 , the device at least comprises:

[0144] An acquisition module 701 is used to acquire a first temperature value of the transistor;

[0145] A control module 702, configured to determine the driving voltage of the transistor to be the rated operating voltage of the transistor when the first temperature value is within a preset temperature range;

[0146] When the first temperature value is greater than a first threshold, the driving voltage of the transistor is controlled to increase, and the first threshold is greater than or equal to an upper limit of the preset temperature range.

[0147] In one implementation, the control module 702 is used to control the driving voltage of the transistor to increase, including:

[0148] The driving voltage of the transistor is controlled to increase to a first voltage value, where the first voltage value is positively correlated with the first temperature value.

[0149] In one implementation, the device is further used to: perform a first voltage limiting process on the driving voltage of the transistor so that the driving voltage of the transistor is less than or equal to the preset voltage limiting value.

[0150] In one implementation, the control module 702 is further configured to determine a first voltage value corresponding to the first temperature value before controlling the driving voltage of the transistor to increase to the first voltage value;

[0151] The control module 702 is used to control the driving voltage of the transistor to increase to a first voltage value, including:

[0152] When the first voltage value is less than or equal to a preset maximum voltage, the driving voltage of the transistor is controlled to increase to the first voltage value.

[0153] In one implementation, the device is further configured to: when the first voltage value is greater than the preset maximum voltage, determine the driving voltage of the transistor to be the preset maximum voltage.

[0154] In one implementation, the control module 702, after controlling the driving voltage of the transistor to increase, is further configured to:

[0155] Acquiring a second temperature value of the transistor;

[0156] When the variation trend of the second temperature value is a decreasing trend, controlling the driving voltage of the transistor to decrease;

[0157] When the second temperature value is within a preset temperature range, the driving voltage of the transistor is determined to be the rated operating voltage.

[0158] It should be noted that the description of the above device embodiment is similar to the description of the above method embodiment, and has similar beneficial effects as the method embodiment. For technical details not disclosed in the device embodiment of the present invention, please refer to the description of the method embodiment of the present invention for understanding.

[0159] It should be noted that, in the embodiment of the present invention, if the above method is implemented in the form of a software function module and sold or used as an independent product, it can also be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the embodiment of the present invention can be essentially or partly reflected in the form of a software product that contributes to the prior art. The computer software product is stored in a storage medium, including a number of instructions to enable a computer device (which can be a terminal, server, etc.) to execute all or part of the methods described in each embodiment of the present invention. The aforementioned storage medium includes: various media that can store program codes, such as a U disk, a mobile hard disk, a read-only memory (ROM), a magnetic disk or an optical disk. In this way, the embodiment of the present invention is not limited to any specific combination of hardware and software.

[0160] In some embodiments, the functions or modules included in the device provided by the embodiments of the present invention can be used to execute the method described in the above method embodiments. The specific implementation can refer to the description of the above method embodiments, and for the sake of brevity, it will not be repeated here.

[0161] Based on the same technical concept as the above embodiments, see Figure 8 The electronic device 800 provided in the embodiment of the present invention may include: a memory 801 and a processor 802; wherein,

[0162] Memory 801, used for storing computer programs and data;

[0163] The processor 802 is configured to execute a computer program stored in the memory to implement any voltage regulation method in the foregoing embodiments.

[0164] In practical applications, the memory 801 may be a volatile memory, such as RAM; or a non-volatile memory, such as ROM, flash memory, hard disk drive (HDD) or solid-state drive (SSD); or a combination of the above types of memory, and provide instructions and data to the processor 802.

[0165] The above description of various embodiments tends to emphasize the differences between the various embodiments. The same or similar parts can be referenced to each other, and for the sake of brevity, they will not be repeated in this article.

[0166] The methods disclosed in the various method embodiments provided by the present invention can be arbitrarily combined without conflict to obtain new method embodiments.

[0167] The features disclosed in the various product embodiments provided by the present invention can be arbitrarily combined without conflict to obtain new product embodiments.

[0168] The features disclosed in the various method or device embodiments provided by the present invention can be arbitrarily combined without conflict to obtain new method embodiments or device embodiments.

[0169] In the several embodiments provided by the present invention, it should be understood that the disclosed devices and methods can be implemented in other ways. The device embodiments described above are only schematic. For example, the division of units is only a logical function division. There may be other division methods in actual implementation, such as: multiple units or components can be combined, or can be integrated into another system, or some features can be ignored or not executed. In addition, the coupling, direct coupling, or communication connection between the components shown or discussed can be through some interfaces, and the indirect coupling or communication connection of devices or units can be electrical, mechanical or other forms.

[0170] The units described above as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, that is, they may be located in one place or distributed on multiple grid units; some or all of the units may be selected according to actual needs to achieve the purpose of the present embodiment.

[0171] In addition, all functional units in the embodiments of the present invention may be integrated into one processing module, or each unit may be separately used as a unit, or two or more units may be integrated into one unit; the above-mentioned integrated units may be implemented in the form of hardware or in the form of hardware plus software functional units.

[0172] A person skilled in the art can understand that all or part of the steps of implementing the above method embodiment can be completed by hardware related to program instructions, and the aforementioned program can be stored in a computer-readable storage medium, which, when executed, executes the steps including the above method embodiment.

[0173] The above description is only a preferred embodiment of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A voltage regulating device, It is characterized in that The device comprises a first branch and a reference voltage output circuit, wherein the first branch is a branch formed by a thermistor and a first resistor connected in series, and the voltage across the first branch is a driving voltage of the transistor; wherein, The resistance value of the thermistor is negatively correlated with the junction temperature of the transistor, and the reference voltage output circuit is used to provide a DC reference voltage to both ends of the thermistor; the thermistor is arranged in the transistor or arranged near the outside of the transistor; The reference voltage output circuit includes a three-terminal voltage regulator; wherein, The input end of the three-terminal voltage regulator is connected to the positive electrode of the first power supply, the ground end of the three-terminal voltage regulator is grounded, the output end of the three-terminal voltage regulator is connected to one end of the thermistor, and the other end of the thermistor is grounded.

2. The device according to claim 1, It is characterized in that The device also includes a first voltage limiting circuit; wherein, The first voltage limiting circuit is connected in parallel with the first branch, and is used to limit the voltage across the first branch so that the voltage across the first branch is less than or equal to the voltage limiting value of the first voltage limiting circuit.

3. The device according to claim 1, It is characterized in that The device also includes a second voltage limiting circuit; wherein, The second voltage limiting circuit is connected between the first power supply and the transistor, and is used to limit the voltage across the first branch so that the voltage across the first branch is greater than or equal to the voltage limiting value of the second voltage limiting circuit.

4. A voltage regulation method, It is characterized in that Applied to the voltage regulating device according to any one of claims 1 to 3, the voltage regulating device is used to regulate the driving voltage of the transistor, and the method comprises: acquiring a first temperature value of the transistor based on the thermistor; When the first temperature value is within a preset temperature range, determining the driving voltage of the transistor to be the rated operating voltage of the transistor; When the first temperature value is greater than a first threshold, the driving voltage of the transistor is controlled to increase, and the first threshold is greater than or equal to an upper limit of the preset temperature range; the controlling the driving voltage of the transistor to increase includes: The driving voltage of the transistor is controlled to increase to a first voltage value, where the first voltage value is positively correlated with the first temperature value.

5. The method according to claim 4, It is characterized in that The method further comprises: A first voltage limiting process is performed on the driving voltage of the transistor so that the driving voltage of the transistor is less than or equal to a preset voltage limiting value.

6. The method according to claim 4, It is characterized in that Before controlling the driving voltage of the transistor to increase to a first voltage value, the method further includes: determining a first voltage value corresponding to the first temperature value; The step of controlling the driving voltage of the transistor to increase to a first voltage value comprises: When the first voltage value is less than or equal to a preset maximum voltage, the driving voltage of the transistor is controlled to increase to the first voltage value.

7. The method according to claim 6, It is characterized in that The method further comprises: When the first voltage value is greater than the preset maximum voltage, the driving voltage of the transistor is determined to be the preset maximum voltage.

8. The method according to claim 4, It is characterized in that After the driving voltage of the transistor is controlled to increase, the method further includes: Acquiring a second temperature value of the transistor; When the variation trend of the second temperature value is a decreasing trend, controlling the driving voltage of the transistor to decrease; When the second temperature value is within a preset temperature range, the driving voltage of the transistor is determined to be the rated operating voltage.

9. A voltage regulating device, It is characterized in that The device comprises a first branch and a reference voltage output circuit, wherein the first branch is a branch formed by a thermistor and a first resistor connected in series, and the voltage across the first branch is a driving voltage of a transistor; the resistance value of the thermistor is negatively correlated with the junction temperature of the transistor, and the reference voltage output circuit is used to provide a DC reference voltage to the two ends of the thermistor; the thermistor is arranged in the transistor or arranged near the outside of the transistor; the reference voltage output circuit comprises a three-terminal voltage regulator; the input end of the three-terminal voltage regulator is connected to the positive electrode of the first power supply, the ground end of the three-terminal voltage regulator is grounded, the output end of the three-terminal voltage regulator is connected to one end of the thermistor, and the other end of the thermistor is grounded; The device at least includes: An acquisition module, configured to acquire a first temperature value of the transistor based on the thermistor; a control module, configured to determine the driving voltage of the transistor to be the rated operating voltage of the transistor when the first temperature value is within a preset temperature range; When the first temperature value is greater than a first threshold, the driving voltage of the transistor is controlled to increase, and the first threshold is greater than or equal to an upper limit of the preset temperature range; the controlling the driving voltage of the transistor to increase includes: The driving voltage of the transistor is controlled to increase to a first voltage value, where the first voltage value is positively correlated with the first temperature value.

10. An electronic device, It is characterized in that The electronic device comprises a memory, a processor and a computer program stored in the memory and executable on the processor, and the processor implements the voltage regulation method according to any one of claims 4 to 8 when executing the program.

11. A computer storage medium, wherein the storage medium stores a computer program; It is characterized in that After being executed, the computer program can implement the voltage regulation method according to any one of claims 4 to 8.

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