Chemical delivery chamber for self-assembled monolayer process

Abstract

Embodiments described herein relate to apparatuses and methods for self-assembled monolayer (SAM) deposition. The apparatuses described herein include a process chamber having various vapor delivery apparatuses fluidly coupled to the process chamber. SAM precursors can be delivered to a process volume of the chamber via various apparatuses heated to maintain the precursors in a vapor phase. In one embodiment, a first ampoule or vaporizer configured for delivering a SAM precursor can be fluidly coupled to a process volume of the process chamber. A second ampoule or vaporizer configured to deliver a material different from the SAM precursor can also be fluidly coupled to the process volume of the process chamber.

Description

[0001] This application is a divisional application of the invention patent application filed on March 24, 2017, with application number 201780025455.0 and invention title "Chemical Delivery Chamber for Self-Assembly Single-Layer Process". Technical Field

[0002] Embodiments of this disclosure generally relate to equipment for handling substrates. More specifically, embodiments described herein relate to chemical delivery chambers for self-assembly monolayer processes. Background Technology

[0003] Reliably manufacturing features of half a micrometer and smaller is one of the key technological challenges for next-generation very large scale (VLSI) and ultra large scale (ULSI) integrated circuits in semiconductor devices. However, as circuit technology continues to shrink, the ever-increasing size of VLSI and ULSI technologies has placed greater demands on processing power.

[0004] As circuit density increases in next-generation devices, the width of interconnects (such as vias, trenches, contacts, gate structures, and other features) and the width of the dielectric material between them are decreasing to dimensions of 45 nm and 32 nm and smaller. To enable the fabrication of next-generation devices and structures, three-dimensional (3D) stacking of features within semiconductor wafers is frequently utilized. In particular, fin field-effect transistors (FinFETs) are commonly used to form three-dimensional (3D) structures within semiconductor wafers. By arranging transistors in a three-dimensional configuration instead of the traditional two-dimensional arrangement, multiple transistors can be placed in an integrated circuit (IC) very close to each other. With increasing circuit density and stacking, the ability to selectively deposit subsequent material on top of previously deposited material becomes crucial.

[0005] Self-assembled monolayers (SAMs) can be used as masking materials to improve the deposition selectivity of subsequent materials. SAMs are typically surface-chemically dependent and can preferentially form on a wide variety of materials. However, existing equipment for depositing SAMs is often limited by slow deposition rates and the ability to reliably deliver SAMs in the vapor state to the processing volume for deposition on a substrate. For example, existing vapor deposition systems use the vapor pressure of a heated SAM molecular solution to deliver SAM molecules at very low pressures (e.g., 2 mTorr) to expose the chemicals to the substrate. This low vapor pressure results in low concentrations in the gas phase and is time-intensive, taking several days in some cases. Therefore, a significant amount of time is required to form dense, high-quality SAM films without pinholes.

[0006] Therefore, what is needed in the art is improved equipment for substrate processing. Summary of the Invention

[0007] In one embodiment, a substrate processing apparatus is provided. The apparatus includes a chamber body defining a processing volume, a substrate support disposed within the processing volume, and a nozzle disposed opposite to the substrate support. A cover plate is coupled to the chamber body, a back plate is disposed between the cover plate and the nozzle, and an injection assembly is coupled to the cover plate and opposite to the back plate. The injection assembly is in fluid communication with the processing volume via the back plate and the nozzle. A first steam generating assembly is in fluid communication with the injection assembly and is configured to deliver a self-assembled monolayer (SAM) precursor to the processing volume in a vapor state. A first heated delivery conduit is disposed between the first steam generating assembly and the injection assembly. A second steam generating assembly is in fluid communication with the injection assembly and is configured to deliver a co-reactant to the processing volume in a vapor state. A second heated delivery conduit is disposed between the second steam generating assembly and the injection assembly.

[0008] In another embodiment, a substrate processing apparatus is provided. The apparatus includes a chamber body defining a processing volume, a substrate support disposed within the processing volume, and a heater disposed within the processing volume and opposite to the substrate support. A manifold is coupled to the chamber body and extends into the processing volume and between the substrate support and the heater. A cover plate is coupled to the chamber body, and the heater is disposed between the substrate support and the cover plate. A fluid conduit extends radially outward of the heater through the cover plate and the manifold, and a steam generating assembly is also coupled to the chamber body. The steam generating assembly includes a syringe in fluid communication with the processing volume via the fluid conduit. An exhaust port is disposed in the manifold and opposite to the syringe, and steam injected into the processing volume flows from the syringe to the exhaust port.

[0009] In yet another embodiment, a substrate processing apparatus is provided. The apparatus includes a chamber body defining a processing volume, a substrate support disposed within the processing volume, and a heater disposed within the processing volume and opposite to the substrate support. A cover plate is coupled to the chamber body, and the heater is disposed between the substrate support and the cover plate. A steam generating assembly is coupled to a central region of the cover plate, and the steam generating assembly may include a syringe in fluid communication with the processing volume. A SAM precursor source is in fluid communication with the processing volume via the steam generating assembly, and a co-reactant precursor source is also in fluid communication with the processing volume via the steam generating assembly. Attached Figure Description

[0010] To enable a detailed understanding of the features described above in this disclosure, a more specific description of the disclosure, briefly outlined above, can be obtained by referring to embodiments shown in the accompanying drawings. However, it should be noted that the accompanying drawings illustrate exemplary embodiments and are therefore not intended to limit their scope; other equivalent embodiments are permitted.

[0011] Figure 1 A cross-sectional view of a processing chamber according to one embodiment described herein is shown.

[0012] Figure 2A This illustrates one embodiment according to the description herein. Figure 1 A perspective view of the nozzle in the processing chamber.

[0013] Figure 2B This shows a section taken along line 2B-2B according to one embodiment described herein. Figure 2A A cross-sectional view of the nozzle.

[0014] Figure 3A This illustrates one embodiment according to the description herein. Figure 1 A perspective view of the nozzle liner of the processing chamber.

[0015] Figure 3B This shows a section taken along line 3B-3B according to one embodiment described herein. Figure 3A A cross-sectional view of the nozzle liner.

[0016] Figure 4 This illustrates one embodiment according to the description herein. Figure 1 A perspective view of the pumping liner of the processing chamber.

[0017] Figure 5A A cross-sectional view of a processing chamber according to one embodiment described herein is shown.

[0018] Figure 5B This illustrates one embodiment according to the description herein. Figure 5A The amplification section of the processing chamber.

[0019] Figure 5C This illustrates one embodiment according to the description herein. Figure 5A A plan view of the substrate support and manifold of the processing chamber.

[0020] Figure 6 A cross-sectional view of a processing chamber according to one embodiment described herein is shown.

[0021] To facilitate understanding, the same element symbols are used to denote common elements in the accompanying drawings, where possible. It is conceivable that elements and features of one embodiment may be beneficially incorporated into other embodiments without further description. Detailed Implementation

[0022] The embodiments described herein relate to apparatus and methods for self-assembled monolayer (SAM) deposition. The apparatus described herein includes a processing chamber having various gas-phase delivery devices fluidly coupled thereto. SAM precursors can be delivered to the processing volume of the chamber via various devices for heating to maintain the precursors in the gas phase. In one embodiment, a first ampoule or evaporator configured to deliver the SAM precursor may be fluidly coupled to the processing volume of the processing chamber. A second ampoule or evaporator configured to deliver a material different from the SAM precursor may also be fluidly coupled to the processing volume of the processing chamber.

[0023] The many details, dimensions, angles, and other features shown in the accompanying drawings are merely illustrative of particular embodiments. Therefore, other embodiments may have different details, components, dimensions, angles, and features without departing from the spirit or scope of this disclosure. Furthermore, further embodiments of this disclosure may be implemented without requiring the details described below.

[0024] As used herein, a “self-assembled monolayer” (SAM) generally refers to a molecular layer that is attached (e.g., by chemical bonding) to a surface and is preferably oriented relative to the surface and even relative to each other. SAMs typically comprise an organic layer of amphiphilic molecules, where one end of the molecule, a “head group,” exhibits a specific, reversible affinity for the substrate. The choice of the head group will depend on the application of the SAM, where the type of SAM compound is based on the substrate used. Typically, the head group is attached to an alkyl chain, where the tail or “terminus” can be functionalized, for example, to alter wettability and interfacial properties. The molecules forming the SAM will selectively attach to one material on another (e.g., metals and dielectric materials), and if sufficient density is achieved, subsequent deposition can be successfully manipulated, allowing selective deposition on materials not coated with the SAM.

[0025] Figure 1A cross-sectional view of a processing chamber 100 according to one embodiment described herein is shown. The chamber 100 includes a chamber body 102 defining a processing volume 110. A substrate support 104 may be disposed within the processing volume 110, and a nozzle 112 may be disposed opposite the substrate support 104. A pumping liner 150 may be coupled to the chamber body 102 and may be disposed radially outside the substrate support 104. A cover plate 124 may be coupled to the nozzle 112 and supported by the chamber body 102. A back plate 114 may be disposed between the nozzle 112 and the cover plate 124. An injection assembly 126 may be coupled to the cover plate 124 and may be in fluid communication with the processing volume 110.

[0026] The chamber body 102 may be made of a material suitable for withstanding temperatures up to about 300°C. For example, the chamber body 102 may be formed of aluminum, its alloys, stainless steel, and other suitable metallic materials. A slit valve opening 160 may be formed in the chamber body 102 to allow the substrate to enter and exit the processing volume 110. A slit valve 158 may be coupled to the chamber body 102 and may be movable to seal and unseal the slit valve opening 160. In one embodiment, the slit valve 158 may be formed of the same material as the chamber body 102. Alternatively, the slit valve 158 may be formed of a different material than the chamber body 102.

[0027] The substrate support 104 can be movably disposed within the processing volume 110. As shown, the substrate support 104 is disposed in an elevated processing position. The substrate support 104 can be lowered such that the substrate support surface of the substrate support 104 is coplanar with or below the slit valve opening 160, to allow the substrate to be positioned on the substrate support 104. The substrate support can be formed of a material suitable for operation at elevated processing temperatures and can be a metallic material, a ceramic material, or a combination thereof. For example, the base can be formed of aluminum, aluminum alloy, stainless steel, or a ceramic material (such as alumina or aluminum nitride).

[0028] The substrate support 104 may have a heating element 106 disposed therein, and the heating element 106 may be coupled to a power source 154. The power source 154 may also provide power for raising and lowering the substrate support 104 within the processing volume 110. The heating element 106 may be a resistance heater or a similar heater, and may be disposed within the substrate support 104 in any desired orientation. For example, the heating element 106 may be formed in the substrate support 104 in a helical orientation or other suitable orientation (such as a skewed path orientation) configured to uniformly heat the substrate support. In one embodiment, the heating element 106 may be configured to heat the substrate support 104 to a temperature between about 100°C and about 300°C.

[0029] The pumping liner 150 is sized to surround the substrate support 104 and the processing volume 110. Similar to the substrate support 104, the pumping liner 150 may be formed of a metallic material, a ceramic material, or a combination thereof. For example, the base may be formed of aluminum, an aluminum alloy, stainless steel, or a ceramic material such as alumina or aluminum nitride. The pumping liner 150 may have an opening 162 formed therein to allow the substrate to enter and exit the processing volume 110. The opening 162 may be positioned substantially coplanar with a slit valve opening 160. A plurality of orifices 152 may be formed along the inner diameter of the pumping liner 150. The plurality of orifices 152 are provided for discharging gases and other materials from the processing volume 110 to an exhaust outlet. Thus, the processing volume 110 is in fluid communication with the exhaust outlet 156 via the orifices 152 of the pumping liner 150.

[0030] A nozzle 112, disposed opposite to the substrate support 104, may be directly or indirectly coupled to and supported by the chamber body 102. The nozzle 112 may be formed of a material similar to that used for the substrate support 104 and the pumping liner 150. The nozzle 112 may have a plurality of first channels 121 formed therein, extending from the processing volume 110 to a first gas collection chamber 120 formed between the nozzle 112 and the back plate 114. The first channels 121 enable fluid communication and transfer of steam from the first gas collection chamber 120 to the processing volume 110.

[0031] Nozzle liner 108 may also be disposed within processing volume 110. Nozzle liner 108 may be formed of the same or similar material as nozzle 112, and nozzle liner may be coupled to nozzle 112. In one embodiment, nozzle liner 108 is annular. Nozzle liner 108 may have an inner diameter substantially similar to the outer diameter of substrate support 104. The inner diameter of nozzle liner 108 may also be adjusted such that the innermost surface of nozzle liner 108 is radially outside the first channel 121 so as not to interfere with the delivery of vapor to processing volume 110. Nozzle liner 108 occupies physical space within processing volume 110 and reduces the volume of processing volume 110, thereby reducing the amount of SAM precursor required to form SAM molecules on the substrate. Therefore, the efficiency of the SAM formation process can be improved.

[0032] The nozzle 112 may also have a heater 116 disposed therein. The heater 116 may be a resistance heater or similar heater, and may be disposed within the nozzle 112 and located radially outside the first channel 121. In one embodiment, the heater 116 may be disposed within the nozzle 112 substantially circumferentially oriented around the first channel 121. The heater 116 may be coupled to a power source 118 to enable resistance heating of the nozzle 112. In one embodiment, the nozzle 112 may be configured to heat to a temperature between about 150°C and about 250°C.

[0033] A backplate 114, disposed between the nozzle and the cover plate 124 and partially defining the first gas collection chamber 120, may have a plurality of second channels 123 disposed therein. A second gas collection chamber 122 may be formed between the backplate 114 and the cover plate 124. The channels 123 allow the second gas collection chamber 122 to be in fluid communication with the first gas collection chamber 120. A plurality of third channels 125 may be formed in the cover plate 124 and located between the second gas collection chamber 122 and the injection assembly 126.

[0034] Injection assembly 126 is configured to deliver evaporated material to processing volume 110. In operation, evaporated material (such as SAM precursors and / or co-reactant precursors) is delivered from injection assembly 126 to second gas collection chamber 122 via multiple third channels 125. The evaporated material travels through multiple second channels 123 of backplate 114 to first gas collection chamber 120 and through multiple first channels 121 of nozzle 112 to processing volume 110. After processing the substrate, evaporated material and other effluents can be removed from processing volume 110 via venting 156 through orifices 152 of pumping liner 150.

[0035] The injection assembly 126 includes a housing 127 coupled to a cover plate 124 and a syringe 128 coupled to the housing 127. The syringe 128 may be disposed within the housing 127 and may include a third gas collection chamber 148. In one embodiment, the third gas collection chamber 148 may be funnel-shaped. The shape of the third gas collection chamber 148 may be configured to promote and stimulate mixing of the evaporated material before it is conveyed to the processing volume 110. While the third gas collection chamber 148 is shown as funnel-shaped, other shapes that promote mixing of vaporized material are also contemplated.

[0036] The first ampoule 130 may be coupled to the injection assembly 126 via the first conduit 132. More specifically, the first ampoule 130 may be in fluid communication with the third gas collection chamber 148 of the syringe 128 via the first conduit 132. The first conduit 132 may extend from the first ampoule 130 to the third gas collection chamber 148. A first heater sheath 134 may surround the first conduit 132 on a portion of the first conduit 132 outside the syringe 128. In one embodiment, the first heater sheath 134 may be resistively heated to maintain the temperature of the first conduit 132 between about 50°C and about 250°C.

[0037] The first ampoule 130 is configured to evaporate the SAM precursor and deliver it to the processing volume 110. Examples of suitable SAM precursors used according to the embodiments described herein include, in addition to other SAM precursor materials having properties suitable for blocking the deposition of subsequent deposited materials in semiconductor manufacturing processes, the materials described below (including compositions, mixtures, and grafts thereof). In one embodiment, the SAM precursor may be a carboxylic acid material, such as methylcarboxylic acid, ethylcarboxylic acid, propylcarboxylic acid, butylcarboxylic acid, pentylcarboxylic acid, hexylcarboxylic acid, heptylcarboxylic acid, octylcarboxylic acid, nonylcarboxylic acid, decylcarboxylic acid, undecylcarboxylic acid, dodecylcarboxylic acid, tridecylcarboxylic acid, tetradecylcarboxylic acid, pentadecylcarboxylic acid, hexadecylcarboxylic acid, heptadecanylcarboxylic acid, octadecylcarboxylic acid, and nonadecanylcarboxylic acid.

[0038] In one embodiment, the SAM precursor may be a phosphonic acid material, such as methylphosphonic acid, ethylphosphonic acid, propylphosphonic acid, butylphosphonic acid, pentylphosphonic acid, hexylphosphonic acid, heptylphosphonic acid, octylphosphonic acid, nonylphosphonic acid, decylphosphonic acid, undecylphosphonic acid, dodecylphosphonic acid, tridecylphosphonic acid, tetradecylphosphonic acid, pentadecylphosphonic acid, hexadecylphosphonic acid, heptadecanylphosphonic acid, octadecylphosphonic acid, and nonadecanylphosphonic acid.

[0039] In another embodiment, the SAM precursor may be a thiol material, such as methanethiol, ethylthiol, propanethiol, butanethiol, pentathiol, hexanethiol, heptanethiol, octanethiol, nonanethiol, decanethiol, undecanethiol, dodecanethiol, tridecanethiol, tetradecanethiol, pentadecanethiol, hexadecanethiol, heptanethiol, octadecanethiol, and nonadecanthiol.

[0040] In another embodiment, the SAM precursor may be a silylamine material, such as tris(dimethylamino)methylsilane, tris(dimethylamino)ethylsilane, tris(dimethylamino)propylsilane, tris(dimethylamino)butylsilane, tris(dimethylamino)pentylsilane, tris(dimethylamino)hexylsilane, tris(dimethylamino)heptylsilane, tris(dimethylamino)octylsilane, tris(dimethylamino)nonylsilane, tris(dimethylamino)decylsilane, tris(dimethylamino)undecylsilane, tris(dimethylamino)dodecylsilane, tris(dimethylamino)tridecylsilane, tris(dimethylamino)tetradecylsilane, tris(dimethylamino)pentadecanylsilane, tris(dimethylamino)hexadecylsilane, tris(dimethylamino)heptadecylsilane, tris(dimethylamino)octadecylsilane, and tris(dimethylamino)nonadecanylsilane.

[0041] In another embodiment, the SAM precursor may be a chlorosilane material, such as methyltrichlorosilane, ethyltrichlorosilane, propyltrichlorosilane, butyltrichlorosilane, pentyltrichlorosilane, hexyltrichlorosilane, heptyltrichlorosilane, octyltrichlorosilane, nonyltrichlorosilane, decyltrichlorosilane, undecyltrichlorosilane, dodecyltrichlorosilane, tridecyltrichlorosilane, tetradecyltrichlorosilane, pentadecyltrichlorosilane, hexadecyltrichlorosilane, heptadecanyltrichlorosilane, heptadecanyltrichlorosilane, octadecyltrichlorosilane, and nonadecanyltrichlorosilane.

[0042] In another embodiment, the SAM precursor may be an oxysilane material, such as methyltrimethoxysilane, methyltriethoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, propyltrimethoxysilane, propyltriethoxysilane, butyltrimethoxysilane, butyltriethoxysilane, pentyltrimethoxysilane, pentyltriethoxysilane, hexyltrimethoxysilane, hexyltriethoxysilane, heptyltrimethoxysilane, heptyltriethoxysilane, octyltrimethoxysilane, octyltriethoxysilane, nonyltrimethoxysilane, nonyltriethoxysilane, decyltrimethoxysilane, decyltriethoxysilane, etc. Oxysilanes, undecyltrimethoxysilanes, undecyltriethoxysilanes, dodecyltrimethoxysilanes, dodecyltriethoxysilanes, tridecyltrimethoxysilanes, tridecyltriethoxysilanes, tetradecyltrimethoxysilanes, tetradecyltriethoxysilanes, pentadecyltrimethoxysilanes, pentadecyltriethoxysilanes, hexadecyltrimethoxysilanes, hexadecyltriethoxysilanes, heptadecanyltrimethoxysilanes, heptadecanyltriethoxysilanes, octadecyltrimethoxysilanes, octadecyltrimethoxysilanes, nonadecanyltrimethoxysilanes, and nonadecanyltriethoxysilanes.

[0043] In another embodiment, the SAM precursor may have a fluorinated R group, such as (1,1,2,2-perfluorodecyl)trichlorosilane, trichloro(1,1,2,2-perfluorooctyl)silane, (tridecylfluoro-1,1,2,2-tetrahydrooctyl)trichlorosilane, (tridecylfluoro-1,1,2,2-tetrahydrooctyl)triethoxysilane, (tridecylfluoro-1,1,2,2-tetrahydrooctyl)methyldichlorosilane, (tridecylfluoro-1,1,2,2-tetrahydrooctyl)dimethylchlorosilane, and (heptadecylfluoro-1,1,2,2-tetrahydrodecyl)trichlorosilane, etc.

[0044] The second ampoule 136 may be coupled to the injection assembly 126 via the second conduit 138. More specifically, the second ampoule 136 may be in fluid communication with the third gas collection chamber 148 of the syringe 128 via the second conduit 138. The second conduit 138 may extend from the second ampoule 136 to the third gas collection chamber 148. A second heater sheath 140 may surround the second conduit 138 on a portion of the second conduit 138 disposed outside the syringe 128. In one embodiment, the second heater sheath 140 may be resistively heated to maintain the temperature of the second conduit 138 between about 50°C and about 250°C.

[0045] The second ampoule 136 is configured to evaporate and transport the co-reactant precursor to the processing volume 110. Suitable examples of co-reactant precursors include hydroxyl moiety materials (such as ambient air, aqueous solutions, or vapors), hydrogen peroxide solutions or vapors, organic alcohol solutions or vapors (such as methanol, isopropanol, ethanol, and glycols), etc. Hydrogen and oxygen may also be used in combination to form the hydroxyl moiety. Other non-hydroxyl moiety precursors are contemplated to be utilized according to the embodiments described herein. Non-hydroxyl moiety precursors may include nitrogen, (di)isocyanates, hydrogen sulfide, and ammonia, etc.

[0046] In one embodiment, a cleaning gas source 142 may be coupled to the injection assembly 126 via a third conduit 144. More specifically, the cleaning gas source 142 may be in fluid communication with a third gas collection chamber 148 of the syringe 128 via the third conduit 144. The third conduit 144 may extend from the cleaning gas source 142 to the third gas collection chamber 148. A third heater sheath 146 may optionally surround the third conduit 144 at a portion disposed outside the syringe 128. In one embodiment, the third heater sheath 146 may be resistively heated to maintain the temperature of the third conduit 144 between about 50°C and about 250°C. The gas supplied by the cleaning gas source 142 may include chlorine-containing materials, fluorine-containing materials, and other materials suitable for cleaning components of the treatment chamber 100.

[0047] In another embodiment, the clean gas source 142 may be a remote plasma source. In this embodiment, the remote plasma source can excite the clean gas to generate free radicals and / or ions and deliver the plasma products to the processing volume 110. In one embodiment, the remote plasma source may be optional.

[0048] In another embodiment, the clean gas source 142 may be a carrier gas source. A carrier gas can be used to facilitate the transport of the gaseous SAM precursor, and depending on the processing volume 110, the carrier gas can be transported at a specific flow rate suitable for facilitating the transport of the SAM precursor from the third collection chamber 148 through the third channel 125, through the second collection chamber 122 and the second channel 123, and through the first collection chamber 120 and the first channel 121 to the processing volume 110. Suitable carrier gases include gases that are typically inert under SAM adsorption conditions that facilitate the transport of SAM molecules to the substrate surface (such as inert gases or similar gases).

[0049] The heated nozzle 112 and heated substrate support 104 can heat the processing volume 110 to a temperature between about 50°C and about 250°C. Ampoules 130, 136 and conduits 132, 138 can be heated to similar temperatures. The nozzle liner 108, backplate 114, cover plate 124, and injection assembly 126 can also be heated by conduction through the nozzle 112. The temperature of the SAM precursor along its flow path is maintained at the elevated temperature to prevent condensation of the evaporated SAM precursor on various devices. The processing volume 110 can also be maintained at a pressure below about 600 Torr, which also helps to maintain the vapor state of the SAM precursor and co-reactant precursor.

[0050] In one embodiment of the operation, the SAM precursor may flow continuously from the first ampoule 130 to the exhaust port 156 through the processing volume 110. In this embodiment, the pressure of the processing volume 110 may be maintained at an isobaric state. In another embodiment, the SAM precursor may fill the processing volume 110 and may remain in the processing volume 110 for a period of time before being discharged from the processing volume 110. In another embodiment, the co-reactant precursor may flow continuously to the processing volume 110 or be provided in a discontinuous manner (such as a pulsed manner). In another embodiment, the SAM precursor and the co-reactant precursor may be provided to the processing volume 110 continuously or statically in an alternating manner.

[0051] Figure 2A This illustrates one embodiment according to the description herein. Figure 1 A perspective view of the nozzle 112. In the illustrated orientation, the surface 206 of the nozzle, in which a first channel 121 is formed, is adjacent to and at least partially defines the surface of the processing volume 110. A heater 116 extending from the nozzle 112 is also shown. A connecting member 202 (such as a heat-conducting wire or a conductive wire, or the like) may extend from the heater 116 to a power source 118 (not shown).

[0052] Figure 2B This shows a cut along line 2B-2B according to one embodiment described herein. Figure 2AA cross-sectional view of the nozzle 112. In the illustrated embodiment, a heater 116 is disposed within the nozzle 112. A perforation may be machined into the body of the nozzle 112, and the heater 116 can be inserted into the nozzle 112. After the heater 116 is inserted or placed, a cover 204 may be coupled to the nozzle 112 at a position opposite to surface 206. The cover 204 encloses the heater 116 within the nozzle 112 and prevents the heater 116 from being exposed to various processing environments.

[0053] Figure 3A A perspective view of a nozzle liner 108 according to one embodiment described herein is shown. As shown, the nozzle liner 108 is primarily annular. Other embodiments with various geometries, such as annular, rectangular, and polygonal, are conceivable.

[0054] Figure 3B This shows a section taken along line 3B-3B according to one embodiment described herein. Figure 3A A cross-sectional view of the nozzle liner 108. The nozzle liner 108 includes a first surface 310 and a second surface 308, the second surface 308 being perpendicular to and extending from the first surface 310. A third surface 306 is perpendicular to the second surface 308 and extends radially inward from the second surface 308. In one embodiment, the first surface 310 and the third surface are substantially parallel. A fourth surface 314 is perpendicular to and extends from the third surface 306, and is parallel to the second surface 308. A fifth surface 304 is perpendicular to and extends from the fourth surface 314. A sixth surface 302 is perpendicular to the fifth surface 304 and extends from the fifth surface 304 to the first surface 310.

[0055] A first surface 310 may be configured to be adjacent to and contact the nozzle 112 within the chamber 100. A second surface 308 may be configured to be adjacent to and contact the pumping liner 150. The second surface 308 defines the outer diameter of the nozzle liner 108, and the second surface 308 may have a diameter smaller than the inner diameter of the pumping liner 150. A sixth surface 302 defines the inner diameter of the nozzle liner 108, and the sixth surface 302 may be configured radially outward of the first channel 121. One or more holes 312 may be formed in the nozzle liner 108 and extend between the first surface 310 and the fifth surface 304. The holes 312 may provide for coupling devices (such as screws or the like) to secure the nozzle liner 108 to the nozzle 112.

[0056] Figure 4A perspective view of a pumping liner 150 according to one embodiment described herein is shown. As shown, the pumping liner 150 is primarily annular. An opening 162 formed in the pumping liner 150 may extend circumferentially between about 25% and about 50% of the circumference. It is contemplated that the opening 162 may be sized sufficiently to allow a substrate and a robot conveying blade to pass through it. The opening 152 may be provided along an inner surface 402 defining the inner diameter of the pumping liner 150, and the opening 152 may extend through the pumping liner 150 to a portion of the outer diameter of the pumping liner 150. Although not shown, the opening 152 extends completely through the pumping liner 150, which in Figure 1 It is shown more clearly in the middle.

[0057] Figure 5A A cross-sectional view of a processing chamber 500 according to one embodiment described herein is shown. The chamber 500 includes a chamber body 502 defining a processing volume 506. A substrate support 504 may be disposed within the processing volume 506, and a heater 514 may be disposed within the processing volume 506 and opposite to the substrate support 504. A cover plate 516 may be coupled to the chamber body 502, and a steam generating assembly 518 may be coupled to the cover plate 516.

[0058] The chamber body 502 may be formed of the same or similar material as the chamber body 102. Similarly, the substrate support 504 may be formed of the same or similar material as the substrate support 104. The substrate support 504 includes a heating member 508 disposed therein. The heating member 508 may be coupled to a power source 510 and configured to heat the substrate support 504 to a temperature between about 100°C and about 500°C.

[0059] A heater 514 disposed opposite to the substrate support 504 may further define a processing volume 506 between the heater 514 and the substrate support 504. The heater 514 may be coupled to a power source 528 and configured to heat the heater 514 to a temperature between about 100°C and about 500°C. The temperature of the processing volume 506 may be maintained during processing at a temperature between about 50°C and about 500°C, such as between about 100°C and about 250°C. A gas source 526 may also be coupled to the heater 514 and may be in fluid communication with the processing volume 506. In one embodiment, the gas source 526 may be configured to deliver a co-reactant precursor to the processing volume 506. Alternatively, the gas source 526 may be configured to deliver a purge gas, carrier gas, or cleaning gas to the processing volume 506, depending on the desired embodiment.

[0060] A steam generating assembly 518 (such as an evaporator, a direct liquid injection evaporator, or the like) may be coupled to a cover plate 516. The steam generating assembly 518 is coupled to the cover plate 516 and located radially outside the processing volume. The location of the steam generating assembly 518 and the location of steam injection into the processing volume 506 provide cross-flow type exposure of the substrate to the SAM precursor. The steam generating assembly 518 includes an evaporator 522 and an injector 520 extending from the evaporator 522. The evaporator 522 may be coupled to a SAM precursor source 524 and receives the SAM precursor in liquid form for evaporation. The evaporator 522 may be maintained at a temperature between about 100°C and about 500°C to evaporate the SAM precursor, and the temperature of the evaporator 522 may be determined at least in part by the vapor pressure of the SAM precursor.

[0061] The evaporated SAM precursor exits the evaporator 522 and travels through the syringe 520. The syringe 520 extends from the evaporator 522 through a vapor generating assembly 518 and extends to a cover plate 516. The vapor generating assembly 518 is maintained at an elevated temperature by a heater sheath 512 to keep the SAM precursor in a vapor state. Although a single syringe is shown, additional syringes, such as… Figure 6 As shown in the diagram. The travel path of the SAM precursor will be about Figure 5B And let's discuss it in more detail.

[0062] Manifold 536 is coupled to chamber body 502 and located radially outside substrate support 504 and heater 514. Manifold 536 may be formed of the same or similar material as substrate support 504 and heater 514. Manifold 536 is sized to surround processing volume 506 such that the inner diameter of manifold 536 is larger than the outer diameter of substrate support 504 and heater 514. Steam can flow from injector 520 through manifold 536 to outlet 530 opposite to injector 520. Exhaust vent 532 is also coupled to and in fluid communication with processing volume 506. More specifically, exhaust vent 532 is in fluid communication with processing volume 506 via outlet 530. Thus, effluent from processing volume 506 can be discharged from processing volume 506 to exhaust vent 532 via outlet 530.

[0063] Thermal insulation element 534 may be coupled to cover plate 516 and located radially outside of heater 514. Thermal insulation element 534 may be sized to resemble manifold 536 and may be disposed between manifold 536 and cover plate 516. Thermal insulation element 534 may also be coupled to or in contact with chamber body 502. Thermal insulation element 534 may be formed of thermally insulating material (such as ceramic or similar material) configured to reduce or prevent heat conduction from substrate support 504, heater 514, and manifold 536 to cover plate 516. In one embodiment, thermal insulation element 534 may be optional. In such an embodiment, an air gap may be used as a thermal barrier between cover plate 516 and substrate support 504, heater 514, and manifold 536.

[0064] Figure 5B This illustrates one embodiment according to the description herein. Figure 5A The enlarged portion of the processing chamber 500. Injector 520 extends to cover plate 516 and is adjacent to a first conduit 548 formed in cover plate 516. A second conduit 546 may be formed in thermal insulation member 534 and is adjacent to and aligned with the first conduit 548. A third conduit 544 may be formed in manifold 536 and is adjacent to and aligned with the second conduit 546. The third conduit 544 may extend from the second conduit 546 in thermal insulation member 534 to an outlet 542 disposed adjacent to the processing volume 506. The outlet 542 may be positioned such that when substrate support member 504 is in an elevated processing position, steam supplied from steam generation assembly 518 enters the processing volume 506 between substrate support member 504 and heater 514. Thus, steam from steam generation assembly 518 travels through injector 520, first conduit 548, second conduit 546, and third conduit 544, and through outlet 542 to the processing volume 506.

[0065] Figure 5C This illustrates one embodiment according to the description herein. Figure 5A The figure shows a plan view of the substrate support 504 and manifold 536 of the processing chamber 500. As shown, the third conduit 544 and outlet 542 are disposed opposite to outlet 530. Therefore, steam exiting outlet 542 travels across the substrate disposed on the substrate support 504 to outlet 530. Outlet 530 may be formed in manifold 536 and extends in a curved manner for a distance less than half the circumference of manifold 536. A plurality of holes 540 may also be formed in substrate support 504 to allow lifting pins to extend through them.

[0066] Figure 6A cross-sectional view of a processing chamber 600 according to one embodiment described herein is shown. Chamber 600 includes a chamber body 602 defining a processing volume 606. A substrate support 604 may be disposed within the processing volume 606, and a cover plate 616 may be coupled to the chamber body 602 and opposite to the substrate support 604. A steam generating assembly 618 may be coupled to the cover plate 616.

[0067] The chamber body 602 may be formed of the same or similar material as the chamber body 502. Similarly, the substrate support 604 may be formed of the same or similar material as the substrate support 504. The substrate support 604 includes a heating member 608 disposed therein. The heating member 608 may be coupled to a power source 610 and configured to heat the substrate support 604 to a temperature between about 100°C and about 500°C.

[0068] A vapor generating assembly 618 (such as an evaporator, a direct liquid injection evaporator, or the like) may be coupled to a cover plate 616 and located adjacent to the center of the processing volume 606. The location of the vapor generating assembly 618 and the location for injecting steam into the processing volume 606 provide top-to-bottom exposure of the substrate to the SAM precursor. The vapor generating assembly 618 includes an evaporator 622 and one or more injectors 612, 614 extending from the evaporator 622. The evaporator 622 may be coupled to a SAM precursor source 624 and receive the SAM precursor in liquid form for evaporation. The evaporator 622 may be maintained at a temperature between about 100°C and about 500°C to evaporate the SAM precursor, and the temperature of the evaporator 622 may be determined at least in part by the vapor pressure of the SAM precursor.

[0069] The evaporated SAM precursor can exit evaporator 622 and travel via one or both of syringes 612, 614. Syringes 612, 614 extend from evaporator 622 through steam generation assembly 618 and to cover plate 616, which is maintained at an elevated temperature by heater sheath 628 to keep the SAM precursor in a vapor state. In one embodiment, SAM precursor from source 624 can be introduced into the processing volume via syringe 612 through outlet 630. Gas source 626 can also be in fluid communication with processing volume 606. Gas source 626 can introduce liquid or gas into steam generation assembly 618, and the generated vapor can be introduced into processing volume 606 via syringe 614 and outlet 630. In one embodiment, gas source 626 can provide co-reactant precursors. In another embodiment, gas source 626 can provide a purifying gas, carrier gas, or cleaning gas, depending on the desired implementation.

[0070] The processing volume 606 can also be in fluid communication with the exhaust 632. Therefore, the effluent from the processing volume can be discharged from the processing volume 606 via the exhaust 632. Both chambers 500 and 600 can be maintained at a pressure less than about 600 Torr. The processes performed in chambers 500 and 600 can be isobaric or non-isobaric. Similarly, the processes performed in chambers 500 and 600 can be isothermal or non-isothermal.

[0071] While the foregoing relates to embodiments of this disclosure, other and further embodiments of this disclosure may be designed without departing from the basic scope of this disclosure, and the scope of protection of this disclosure is determined by the appended claims.

Claims

1. A substrate processing apparatus, comprising: Substrate support; A heater, wherein the heater is disposed opposite to the substrate support; A cover plate, wherein the heater is disposed between the substrate support and the cover plate; A manifold is disposed radially outside the substrate support and the heater, defining a processing volume between the substrate support and the heater, and the manifold is disposed below the cover plate to surround the processing volume, wherein the manifold contacts the substrate support and the heater. and A steam generating assembly is radially coupled to the cover plate on the outer side of the processing volume and is in fluid communication with the processing volume via a first conduit formed in the cover plate and a second conduit formed in the manifold. The second conduit formed in the manifold includes a first outlet disposed adjacent to and radially outward of the processing volume, and the manifold includes a second outlet disposed opposite to the first outlet. Steam generated from the steam generating assembly flows into the manifold through the first pipe in the cover plate, then flows into the processing volume from the first outlet through the second pipe in the manifold, and then travels across the substrate disposed on the substrate support to the second outlet. The steam generating assembly includes: Evaporator; and The syringe extends from the evaporator and is in fluid communication with the second conduit formed in the manifold.

2. The apparatus of claim 1, wherein the first outlet and the second outlet are configured to generate a crossflow of fluid through the processing volume.

3. The device of claim 1, wherein the second outlet extends flexibly by a distance less than half the circumference of the manifold.

4. The device according to claim 1, further comprising: A thermal insulation element is disposed between the cover plate and the manifold.

5. The device of claim 4, wherein the thermal insulation element includes a third conduit aligned with the second conduit formed in the manifold.

6. The device of claim 5, wherein the first conduit formed in the cover plate is aligned with the third conduit formed in the thermal insulation member.

7. The device of claim 6, wherein the syringe extends to the cover plate and is adjacent to the first conduit formed in the cover plate.

8. The device according to claim 1, wherein the substrate support includes a heating member disposed in the substrate support.

9. The apparatus of claim 1, wherein the steam generating component is a direct liquid injection evaporator.

10. The apparatus of claim 1, wherein the steam generating assembly includes a heater sheath.

11. The apparatus of claim 1, wherein the processing volume is configured to be maintained at a pressure below 600 Torr.

12. The apparatus of claim 1, wherein the steam generating assembly further comprises: A second syringe extends from the vaporizer.

13. The device according to claim 1, further comprising: An exhaust manifold, which is in fluid communication with the processing volume via a second outlet formed in the manifold.

14. The device according to claim 4, further comprising: A chamber body, which is coupled to the cover plate and surrounds the substrate support.

15. The apparatus of claim 1, wherein the steam generating assembly includes a heater sheath.

16. The device of claim 1, wherein the evaporator is configured to be maintained at a temperature between 100°C and 500°C.

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