Light emitting diode packaging structure and manufacturing method thereof

Abstract

The present invention discloses a light-emitting diode packaging structure and a manufacturing method thereof. First, a semiconductor wafer is provided, wherein the semiconductor wafer has a plurality of semiconductor substrates. Then, each semiconductor substrate is penetrated to form a first through-hole and a second through-hole. An insulating layer is first formed on the surface of each semiconductor substrate and the inner walls of the first through-hole and the second through-hole, and then a patterned electrode layer is formed on the surface of the semiconductor substrate. A conductive structure covering the insulating layer is formed in the first through-hole and the second through-hole, and the conductive structure and the patterned electrode layer are electrically connected. A light-emitting diode is formed in the second through-hole of each semiconductor substrate, and all the light-emitting diodes are electrically connected to the conductive structure in the second through-hole respectively. Finally, all semiconductor substrates are separated to improve the pass rate and simplify the structure.

Description

Technical Field

[0001] The present invention relates to the field of packaging technology, and in particular to a light emitting diode packaging structure and a manufacturing method thereof. Background Art

[0002] A light-emitting diode (LED) is a light-emitting diode made of semiconductor materials. Using LEDs, a variety of colors can be produced, including red, green, yellow, and blue. In operation, an LED emits light when a forward bias is applied to the PN junction of the semiconductor material. LEDs offer advantages such as low power consumption, high brightness, low voltage, easy integration with integrated circuits, ease of operation, and long life. Therefore, they are widely used in lighting devices and various industries.

[0003] The traditional packaging method of light emitting diodes is to connect the electrodes of the light emitting diodes and the packaging substrate by wire bonding. Figure 1 As shown, the top electrode 10 of the light-emitting diode 1 is electrically connected to the package substrate 2 via a bonding wire. Since multiple light-emitting diodes need to be wire-bonded one by one, there will be problems with production speed and yield that cannot meet the requirements for multi-chip applications. In addition, the wire bonding method is difficult to reduce in size and has high impedance, which makes it difficult to meet the application requirements of lightness, thinness, smallness and high brightness. Summary of the Invention

[0004] An object of the present invention is to provide a light emitting diode package structure and a manufacturing method thereof, which can improve the qualified rate and simplify the structure.

[0005] To achieve the above object, the present invention provides the following solutions:

[0006] The present invention provides a light-emitting diode package structure, comprising a semiconductor substrate, an insulating layer, a first patterned electrode layer, a second patterned electrode layer, and three light-emitting diodes. The semiconductor substrate has a first through-hole and three second through-holes extending therethrough, each of which includes a first sub-through-hole and a second sub-through-hole interconnected with each other. The first sub-through-hole and the second sub-through-hole are respectively located near the top and bottom surfaces of the semiconductor substrate, and the cross-sectional area of the first sub-through-hole is greater than that of the second sub-through-hole. An insulating layer is provided on the surface of the semiconductor substrate and on the inner walls of the first through-hole, the first sub-through-hole, and the second sub-through-hole. The first through-hole and the second sub-through-hole are filled with a conductive structure covering the insulating layer. The first patterned electrode layer is provided on the top surface of the semiconductor substrate and electrically connected to the conductive structure. The second patterned electrode layer is provided on the bottom surface of the semiconductor substrate and electrically connected to the conductive structures in the first through-hole and the second sub-through-hole. All light-emitting diodes are respectively provided in the first sub-through-holes of all the second through-holes and are respectively electrically connected to the conductive structures in the second sub-through-holes.

[0007] In one embodiment of the present invention, the light emitting diode package structure further includes a plurality of conductive pads disposed on the second patterned electrode layer and electrically connected to the second patterned electrode layer.

[0008] In one embodiment of the present invention, each light-emitting diode includes a metal composite substrate, an epitaxial electrode layer, an electrode unit, and a transparent conductive layer. The metal composite substrate includes a first metal layer and two second metal layers, the two second metal layers are respectively located on the upper and lower surfaces of the first metal layer, the first metal layer is a nickel-iron alloy, and the second metal layer is copper. The thickness ratio of the first metal layer to the second metal layer of the metal composite substrate is (2.5-3.5):1. The metal composite substrate is located in the first sub-through hole. The epitaxial electrode layer is located on the metal composite substrate and is located in the first sub-through hole. The electrode unit is provided on the epitaxial electrode layer and is located in the first sub-through hole. The transparent conductive layer covers the metal composite substrate, the conductive structure, the epitaxial electrode layer, the electrode unit, and the first patterned electrode layer, and electrically connects the conductive structure, the electrode unit, and the first patterned electrode layer.

[0009] In one embodiment of the present invention, the light emitting diodes include a red light emitting diode, a green light emitting diode, and a blue light emitting diode.

[0010] In one embodiment of the present invention, the conductive structure is silver paste.

[0011] In one embodiment of the present invention, the material of the first patterned electrode layer and the second patterned electrode layer is conductive ink.

[0012] In one embodiment of the present invention, a method for manufacturing a light-emitting diode package structure is provided. First, a semiconductor wafer is provided, wherein the semiconductor wafer has a plurality of semiconductor substrates. Next, a first through-hole and three second through-holes are formed through each semiconductor substrate, wherein each second through-hole includes a first sub-through-hole and a second sub-through-hole that are interconnected, wherein the first sub-through-hole and the second sub-through-hole are respectively close to the top surface and the bottom surface of the semiconductor substrate, and the cross-sectional area of the first sub-through-hole is larger than the cross-sectional area of the second sub-through-hole. An insulating layer is formed on the surface of each semiconductor substrate and on the inner walls of the first through-hole, the first sub-through-hole, and the second sub-through-hole. A first patterned electrode layer is formed on the top surface of the semiconductor substrate. A conductive structure covering the insulating layer is formed in the first through-hole and the second sub-through-hole, and the conductive structure is electrically connected to the first patterned electrode layer. A second patterned electrode layer is formed on the bottom surface of the semiconductor substrate, and the conductive structure in the second patterned electrode layer, the first through-hole, and the second sub-through-hole is electrically connected. Three light emitting diodes are formed in the first sub-through holes of all the second through holes of each semiconductor substrate, and all the light emitting diodes are electrically connected to the conductive structures in the second sub-through holes. Finally, all the semiconductor substrates are separated.

[0013] In one embodiment of the present invention, the method for manufacturing the light emitting diode package structure further includes forming a plurality of conductive pads on the second patterned electrode layer on each semiconductor substrate, and electrically connecting all the conductive pads to the second patterned electrode layer.

[0014] Based on the above, a light emitting diode package structure and a manufacturing method thereof utilize through silicon via (TSV) technology to improve the yield and simplify the structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0016] Figure 1 It is a structural schematic diagram of the light emitting diode and the packaging substrate of the present invention;

[0017] Figure 2 A cross-sectional view of a light emitting diode package structure according to an embodiment of the present invention;

[0018] Figure 3(a) to Figure 3(h) It is a cross-sectional view of each step of manufacturing a light-emitting diode package structure according to an embodiment of the present invention;

[0019] Figure 4 It is a top view of the structure corresponding to FIG3(b);

[0020] Figure 5 It is a top view of the structure corresponding to FIG3(c);

[0021] Figure 6 It is a top view of the structure corresponding to FIG3(d);

[0022] Figure 7 It is a top view of the structure corresponding to FIG3(e);

[0023] Figure 8 It is a bottom view of the structure corresponding to FIG3(f);

[0024] Figure 9 It is a top view of the structure corresponding to Figure 3(g);

[0025] Figure 10 It is a bottom view of the structure corresponding to Figure 3(h).

[0026] Explanation of symbols:

[0027] 1…light-emitting diode, 10…top electrode, 2…package substrate, 3…light-emitting diode package structure, 30…semiconductor substrate, 301…first through-hole, 302…second through-hole, 3021…first sub-through-hole, 3022…second sub-through-hole, 31…insulating layer, 32…first patterned electrode layer, 33…second patterned electrode layer, 34…light-emitting diode, 341…metal composite substrate, 342…epitaxial electrode layer, 343…electrode unit, 344…transparent conductive layer, 35…conductive structure, 36…conductive pad, 4…semiconductor wafer. DETAILED DESCRIPTION

[0028] The embodiments of the present invention are further explained below with reference to the accompanying drawings. Whenever possible, identical reference numerals will be used in the drawings and the specification to represent identical or similar components. In the drawings, shapes and thicknesses may be exaggerated for simplicity and convenience. It should be understood that components not specifically shown in the drawings or described in the specification are generally known to those skilled in the art. Those skilled in the art may make various changes and modifications based on the disclosure of the present invention.

[0029] When an element is referred to as being "on," it can mean that the element is directly on another element or that there are other elements between them. Conversely, when an element is referred to as being "directly on" another element, it means that there are no other elements between them. As used herein, the term "and / or" includes any combination of one or more of the associated listed items.

[0030] The following description of "one embodiment" or "an embodiment" refers to a specific component, structure, or feature associated with at least one embodiment. Therefore, multiple references to "one embodiment" or "an embodiment" in various places below do not necessarily refer to the same embodiment. Furthermore, specific components, structures, and features in one or more embodiments may be combined in any suitable manner.

[0031] Unless otherwise specified, conditional clauses or words such as "can," "could," "might," or "may" are generally intended to indicate that an embodiment of the present invention has features, components, or steps, but may also be interpreted as not being required. In other embodiments, these features, components, or steps may not be required.

[0032] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0033] Figure 2 This is a cross-sectional view of an embodiment of the light emitting diode packaging structure of the present invention. Figure 2 The light-emitting diode package structure 3 includes a semiconductor substrate 30, an insulating layer 31, a first patterned electrode layer 32, a second patterned electrode layer 33, three light-emitting diodes 34 and a conductive structure 35, wherein the material of the first patterned electrode layer 32 and the second patterned electrode layer 33 can be conductive ink, but the present invention is not limited thereto. The conductive structure 35 includes, but is not limited to, silver paste. All light-emitting diodes 34 include red light-emitting diodes, green light-emitting diodes and blue light-emitting diodes. The semiconductor substrate 30 has a first through hole 301 and three second through holes 302 running through it, and each second through hole 302 includes a first sub-through hole 3021 and a second sub-through hole 3022 that are interconnected. The first sub-through hole 3021 and the second sub-through hole 3022 are respectively close to the top surface and the bottom surface of the semiconductor substrate 30, and the cross-sectional area of the first sub-through hole 3021 is larger than the cross-sectional area of the second sub-through hole 3022. An insulating layer 31 is disposed on the surface of the semiconductor substrate 30 and on the inner walls of the first through-hole 301, the first sub-through-hole 3021, and the second sub-through-hole 3022. The first through-hole 301 and the second sub-through-hole 3022 are filled with a conductive structure 35 covering the insulating layer 31. A first patterned electrode layer 32 is disposed on the top surface of the semiconductor substrate 30 and electrically connected to the conductive structure 35. A second patterned electrode layer 33 is disposed on the bottom surface of the semiconductor substrate 30 and electrically connected to the conductive structures 35 in the first through-hole 301 and the second sub-through-hole 302. All light-emitting diodes 34 are respectively disposed in the first sub-through-holes 3021 of all second through-holes 302 and are respectively electrically connected to the conductive structures 35 in the second sub-through-holes 3022. Furthermore, the light-emitting diode package structure 3 may further include a plurality of conductive pads 36 disposed on the second patterned electrode layer 33 and electrically connected to the second patterned electrode layer 33. Assuming that the semiconductor substrate 30 is a silicon substrate, the first through hole 301 and the second through hole 302 are through silicon vias (TSVs). Therefore, compared with wire bonding technology, the LED package structure 3 utilizes through silicon via (TSV) technology to improve the yield and simplify the structure.

[0034] In certain embodiments of the present invention, each LED 34 may include a metal composite substrate 341, an epitaxial electrode layer 342, an electrode unit 343, and a transparent conductive layer 344. The metal composite substrate 341 includes a first metal layer and two second metal layers, with the second metal layers respectively located on the upper and lower surfaces of the first metal layer. The first metal layer is a nickel-iron alloy, wherein the nickel-iron alloy is invar, and the second metal layer is copper. The thickness ratio of the first metal layer to the second metal layer of the metal composite substrate 341 is (2.5-3.5):1. The metal composite substrate 341 is located in the first sub-via 3021. The metal composite substrate 341 has a high thermal conductivity, a low thermal expansion coefficient, and an initial magnetic permeability. The epitaxial electrode layer 342 is located on the metal composite substrate 341 and in the first sub-via 3021. The electrode unit 343 is disposed on the epitaxial electrode layer 342 and in the first sub-via 3021. The transparent conductive layer 344 covers the metal composite substrate 341 , the conductive structure 35 , the epitaxial electrode layer 342 , the electrode units 343 and the first patterned electrode layer 32 , and electrically connects the conductive structure 35 , the electrode units 343 and the first patterned electrode layer 32 .

[0035] Figure 3(a) to Figure 3(h) The figure is a cross-sectional view of each step of manufacturing a light emitting diode package structure according to an embodiment of the present invention. Figure 4 It is a top view of the structure corresponding to Figure 3(b). Figure 5 It is a top view of the structure corresponding to Figure 3(c). Figure 6 It is a top view of the structure corresponding to Figure 3(d). Figure 7 It is a top view of the structure corresponding to Figure 3(e). Figure 8 It is a bottom view of the structure corresponding to Figure 3(f). Figure 9 It is a top view of the structure corresponding to Figure 3(g). Figure 10 The following is a method for manufacturing the light emitting diode structure 3 of the present invention. First, as shown in FIG3(a), a semiconductor wafer 4 is provided, wherein the semiconductor wafer 4 has a plurality of semiconductor substrates 30. Then, as shown in FIG3(b) and FIG3(h), a semiconductor wafer 4 is provided. Figure 4 As shown, each semiconductor substrate 30 is penetrated to form a first through hole 301 and three second through holes 302. Each second through hole 302 includes a first sub-through hole 3021 and a second sub-through hole 3022 that are interconnected. The first sub-through hole 3021 and the second sub-through hole 3022 are respectively close to the top surface and the bottom surface of the semiconductor substrate 30. The cross-sectional area of the first sub-through hole 3021 is larger than the cross-sectional area of the second sub-through hole 3022. As shown in FIG3 (c) and FIG3 (d), the first through hole 3021 and the second through hole 3022 are respectively close to the top surface and the bottom surface of the semiconductor substrate 30. Figure 5 As shown, an insulating layer 31 is formed on the surface of each semiconductor substrate 30 and the inner walls of the first through hole 301, the first sub-through hole 3021 and the second sub-through hole 3022. Figure 6As shown, a first patterned electrode layer 32 is formed on the top surface of the semiconductor substrate 30. As shown in FIG3(e) and FIG3(f) Figure 7 As shown, a conductive structure 35 covering the insulating layer 31 is formed in the first through hole 301 and the second sub-through hole 3022, and the conductive structure 35 is electrically connected to the first patterned electrode layer 32. As shown in FIG3(f) and FIG3(f), the conductive structure 35 is electrically connected to the first patterned electrode layer 32. Figure 8 As shown, a second patterned electrode layer 33 is formed on the bottom surface of the semiconductor substrate 30, and the second patterned electrode layer 33, the first through hole 301 and the conductive structure 35 in the second sub-through hole 3022 are electrically connected. Figure 9 As shown, three light emitting diodes 34 are formed in the first sub-through holes 3021 of all the second through holes 302 of each semiconductor substrate 30, and all the light emitting diodes 34 are electrically connected to the conductive structures 35 in the second sub-through holes 3022. Figure 10 As shown, a plurality of conductive pads 36 are formed on the second patterned electrode layer 33 on each semiconductor substrate 30, and all the conductive pads 36 are electrically connected to the second patterned electrode layer 33. Finally, all the semiconductor substrates 30 are separated to obtain a plurality of light-emitting diode package structures 3. Please note that these steps do not necessarily have to be completely followed if substantially the same result can be obtained. Figure 3(a) to Figure 3(h) Execute in the order shown.

[0036] Furthermore, in the above method, the step shown in FIG. 3( h ) can be omitted, and a plurality of light-emitting diode package structures 3 can also be obtained.

[0037] According to the above-mentioned embodiments, the light emitting diode package structure and the manufacturing method thereof utilize through silicon via (TSV) technology to improve the yield and simplify the structure.

[0038] The above is only a preferred embodiment of the present invention and is not intended to limit the scope of the present invention. Therefore, all equivalent changes and modifications based on the shape, structure, characteristics and spirit described in the scope of the patent application of the present invention should be included in the scope of the patent application of the present invention.

[0039] This document uses specific examples to illustrate the principles and implementation methods of the present invention. The above examples are only intended to help understand the method and core concept of the present invention. At the same time, those skilled in the art will find that the specific implementation methods and application scopes may vary based on the concept of the present invention. In summary, the contents of this specification should not be construed as limiting the present invention.

Claims

1. A light emitting diode packaging structure, characterized in that: The light emitting diode packaging structure comprises: A semiconductor substrate having a first through-hole and three second through-holes extending therethrough, each of the second through-holes comprising a first sub-through-hole and a second sub-through-hole communicating with each other, wherein the first sub-through-hole and the second sub-through-hole are respectively close to the top surface and the bottom surface of the semiconductor substrate, and the cross-sectional area of the first sub-through-hole is larger than the cross-sectional area of the second sub-through-hole; an insulating layer disposed on the surface of the semiconductor substrate and inner walls of the first through-hole, the first sub-through-hole, and the second sub-through-hole, wherein the first through-hole and the second sub-through-hole are filled with a conductive structure covering the insulating layer; a first patterned electrode layer, disposed on the top surface of the semiconductor substrate and electrically connected to the conductive structure; a second patterned electrode layer, disposed on the bottom surface of the semiconductor substrate and electrically connecting the first through-hole and the conductive structure in the second sub-through-hole; and Three light emitting diodes are respectively disposed in the first sub-through holes of the three second through holes and are respectively electrically connected to the conductive structures in the second sub-through holes.

2. The light emitting diode package structure according to claim 1, wherein: The light emitting diode package structure further includes a plurality of conductive pads, which are disposed on the second patterned electrode layer and electrically connected to the second patterned electrode layer.

3. The light emitting diode package structure according to claim 1, wherein: Each of the light emitting diodes comprises: A metal composite substrate comprising a first metal layer and two second metal layers, the two second metal layers being respectively located on the upper and lower surfaces of the first metal layer, the first metal layer being a nickel-iron alloy, the second metal layer being copper, the thickness ratio of the first metal layer to the second metal layer of the metal composite substrate being (2.5-3.5):1, and the metal composite substrate being located in the first sub-through hole; an epitaxial electrode layer, located on the metal composite substrate and in the first sub-through hole; an electrode unit, disposed on the epitaxial electrode layer and located in the first sub-through hole; and A transparent conductive layer covers the metal composite substrate, the conductive structure, the epitaxial electrode layer, the electrode unit and the first patterned electrode layer, and electrically connects the conductive structure, the electrode unit and the first patterned electrode layer.

4. The light emitting diode package structure according to claim 1, wherein: The three light emitting diodes include a red light emitting diode, a green light emitting diode and a blue light emitting diode.

5. The light emitting diode package structure according to claim 1, wherein: The conductive structure is silver glue.

6. The light emitting diode package structure according to claim 1, wherein: The first patterned electrode layer and the second patterned electrode layer are conductive ink.

7. A method for manufacturing a light emitting diode packaging structure, characterized in that: The method for manufacturing the light emitting diode package structure comprises the following steps: Providing a semiconductor wafer, wherein the semiconductor wafer has a plurality of semiconductor substrates; penetrating each of the semiconductor substrates to form a first through-hole and three second through-holes, each of the second through-holes comprising a first sub-through-hole and a second sub-through-hole that are interconnected, wherein the first sub-through-hole and the second sub-through-hole are respectively close to the top surface and the bottom surface of the semiconductor substrate, and the cross-sectional area of the first sub-through-hole is larger than the cross-sectional area of the second sub-through-hole; forming an insulating layer on the surface of each of the semiconductor substrates and the inner walls of the first through-hole, the first sub-through-hole, and the second sub-through-hole; forming a first patterned electrode layer on the top surface of the semiconductor substrate; forming a conductive structure covering the insulating layer in the first through-hole and the second sub-through-hole, and electrically connecting the conductive structure and the first patterned electrode layer; forming a second patterned electrode layer on the bottom surface of the semiconductor substrate, and electrically connecting the second patterned electrode layer, the first through hole, and the conductive structure in the second sub-through hole; forming three light-emitting diodes in each of the first sub-through holes of the three second through holes of the semiconductor substrate, and electrically connecting the three light-emitting diodes to the conductive structures in the second sub-through holes; and The plurality of semiconductor substrates are separated.

8. The method for manufacturing a light emitting diode package structure according to claim 7, wherein: The method for manufacturing the light emitting diode package structure further includes forming a plurality of conductive pads on the second patterned electrode layer on each of the semiconductor substrates, and electrically connecting the plurality of conductive pads and the second patterned electrode layer.

9. The method for manufacturing a light emitting diode package structure according to claim 7, wherein: The three light emitting diodes include a red light emitting diode, a green light emitting diode and a blue light emitting diode.

10. The method for manufacturing a light emitting diode package structure according to claim 7, wherein: Each of the light emitting diodes comprises: A metal composite substrate comprising a first metal layer and two second metal layers, the two second metal layers being located on the upper and lower surfaces of the first metal layer, respectively; the first metal layer being a nickel-iron alloy; the second metal layer being copper; a thickness ratio of the first metal layer to the second metal layer of the metal composite substrate being (2.5-3.5):1; and the metal composite substrate being located in the first sub-through hole; an epitaxial electrode layer, located on the metal composite substrate and in the first sub-through hole; an electrode unit, disposed on the epitaxial electrode layer and located in the first sub-through hole; and A transparent conductive layer covers the metal composite substrate, the conductive structure, the epitaxial electrode layer, the electrode unit and the first patterned electrode layer, and electrically connects the conductive structure, the electrode unit and the first patterned electrode layer.

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